Method, system, medium and device for evaluating fault ride-through capability of SVG by HIL simulation

Abstract

The application discloses an SVG fault ride-through capability evaluation method and system based on HIL simulation, a medium and equipment, comprising: acquiring photovoltaic power station operation parameters, power grid operation parameters and SVG dynamic reactive power compensation device parameters; constructing a simulation model according to the photovoltaic power station operation parameters, the power grid operation parameters and the SVG dynamic reactive power compensation device parameters, and connecting the simulation model and an SVG controller hardware; setting corresponding test parameter combinations for each test working condition according to a preset fault ride-through test method; controlling the simulation model and the SVG controller hardware to perform simulation according to a preset simulation algorithm and each test parameter combination, and obtaining simulation test results; and evaluating the simulation test results to obtain an SVG fault ride-through capability index. The application improves the reliability and accuracy of evaluating the fault voltage ride-through capability of the dynamic reactive power compensation device of the photovoltaic power station by the method based on the controller hardware-in-the-loop simulation test.

Description

Technical Field

[0001] This invention belongs to the technical field of fault voltage ride-through capability assessment of dynamic reactive power compensation devices in power systems, and relates to a method, system, medium and equipment for assessing SVG fault ride-through capability using HIL simulation. Background Technology

[0002] With the integration of large-scale photovoltaic (PV) power plants, the grid's requirements for their fault voltage ride-through capabilities are increasing. To ensure PV power plants possess good fault ride-through capabilities, the key lies in the performance of their dynamic reactive power compensation devices (such as SVG) and PV inverters. Existing standards, such as GB / T 19964-2024 "Technical Regulations for PV Power Plant Integration into Power Systems," specify clear technical requirements, including low-voltage ride-through, high-voltage ride-through, and continuous fault ride-through capabilities. However, traditional testing methods cannot fully simulate the complex operating conditions in actual power grid environments, leading to inaccurate assessments of equipment fault ride-through capabilities.

[0003] Existing technologies primarily rely on field testing or simple simulation experiments. These methods have limitations when simulating extreme operating conditions and cannot comprehensively verify the fault ride-through capability of dynamic reactive power compensation devices. For example, while the current GB / T 34931-2017 "Technical Specification for Testing Reactive Power Compensation Devices in Photovoltaic Power Stations" provides a basic testing framework, its testing schemes are no longer compatible with the latest technical specifications and lack provisions for key indicators such as the reactive power support capability of the equipment. Furthermore, traditional testing methods fail to adequately consider the consistency between the controller and the actual equipment, resulting in insufficient accuracy and reliability of the test results. Therefore, existing technologies have significant shortcomings in assessing the fault ride-through capability of dynamic reactive power compensation devices in complex power grid environments, necessitating a more advanced simulation testing method to overcome these deficiencies. Summary of the Invention

[0004] To address the shortcomings of existing technologies, this application provides a method, system, medium, and equipment for evaluating the fault voltage ride-through capability of SVG based on HIL simulation. By using a controller hardware-in-the-loop simulation test method, the reliability and accuracy of evaluating the fault voltage ride-through capability of dynamic reactive power compensation devices in photovoltaic power plants are improved.

[0005] To achieve the above objectives, in a first aspect, the present invention provides a method for evaluating the fault-crossing capability of SVG based on HIL simulation, comprising:

[0006] The system acquires operating parameters of the photovoltaic power plant, grid operating parameters, and parameters of the SVG dynamic reactive power compensation device; wherein the SVG dynamic reactive power compensation device is an SVG device located within the photovoltaic power plant.

[0007] Based on the operating parameters of the photovoltaic power station, the operating parameters of the power grid, and the parameters of the SVG dynamic reactive power compensation device, a simulation model is constructed, and the simulation model and the SVG controller hardware are connected; wherein, the simulation model includes: an equivalent model of the photovoltaic power station, an equivalent model of the power grid, an SVG primary system model, and a preset fault simulation module;

[0008] According to the preset fault ride-through test method, corresponding test parameter combinations are set for each test condition; wherein, the test parameter combinations include: the power control strategy parameters of the SVG controller hardware, the equivalent impedance of the grid connection point of the power grid equivalent model, the power mode parameters and power ratio parameters of the SVG primary system model, and the fault triggering mode parameters and fault level specification parameters of the fault simulation module.

[0009] Based on the preset simulation algorithm and the combination of various test parameters, the simulation model and SVG controller hardware are controlled to perform simulation and obtain simulation test results;

[0010] The simulation test results are evaluated to obtain the SVG fault ride-through capability index.

[0011] Compared with existing technologies, the embodiments of this application have the following beneficial effects: By comprehensively acquiring relevant parameters, the authenticity and accuracy of simulation test data are ensured; a simulation model including a photovoltaic power station equivalent model, a power grid equivalent model, an SVG primary system model, and a fault simulation module is constructed to accurately simulate the actual operating environment, providing a foundation for subsequent comprehensive simulation of various operating conditions and improving the reliability of test results; by connecting the simulation model with the actual SVG controller hardware, this hardware-in-the-loop (HIL) simulation method makes the subsequent simulation consistent with the actual operation, and the fault simulation is closer to the actual scenario, which not only improves the accuracy and reliability of test results, but also enables the simulation of the actual operation of field equipment in a laboratory environment, improving flexibility; by setting corresponding combinations of test parameters according to different test conditions, a test basis is provided to reflect the performance of the SVG dynamic reactive power compensation device under different operating conditions, improving the comprehensiveness and authenticity of the test; by using a preset simulation algorithm for simulation, the performance of the equipment under different operating conditions can be effectively verified, providing reliable data support for subsequent evaluation; and by evaluating the simulation test results, the evaluation process is standardized, facilitating experimental comparison and improvement.

[0012] In some embodiments of the first aspect of this application, setting corresponding test parameter combinations for each test condition according to a preset fault ride-through test method includes:

[0013] According to each of the test conditions, the power control strategy parameters are set; wherein, the power control strategy parameters are any one or more of the following: constant reactive power control strategy parameters, constant voltage control strategy parameters, and voltage-reactive power integrated control strategy parameters;

[0014] According to each of the test conditions, the equivalent impedance of the grid connection point is set; wherein, the equivalent impedance of the grid connection point is any one or more of the following: the equivalent impedance of the grid connection point under the large-method operation mode, the equivalent impedance of the grid connection point under the small-method operation mode, and the equivalent impedance of the grid connection point under the normal operation mode.

[0015] Compared with existing technologies, the above embodiments have the following advantages: setting parameters for constant reactive power control strategy, constant voltage control strategy, and voltage-reactive power integrated control strategy ensures that different control strategies of the controller can be covered during the test, improving the comprehensiveness of the test; considering the equivalent impedance under large-method operation mode, small-method operation mode, and normal operation mode makes the test closer to the actual operation, enhancing the reliability of the test results.

[0016] In some embodiments of the first aspect of this application, the step of setting corresponding test parameter combinations for each test condition according to a preset fault ride-through test method further includes:

[0017] According to each of the test conditions, the power mode parameters are set; wherein, the power mode parameters include any one or more of the following: capacitive power output mode parameters and inductive power output mode parameters;

[0018] According to each of the test conditions, the fault triggering mode parameters are set, wherein the fault triggering mode parameters include any one or more of the following: low voltage two-phase phase-to-phase fault mode parameters, low voltage single-phase ground fault mode parameters, low voltage three-phase fault mode parameters, and high voltage three-phase symmetrical voltage rise fault mode parameters.

[0019] According to each of the test conditions, the fault level specification parameters are set; wherein, the fault level specification parameters include any one or more of the following: voltage drop parameters and voltage rise parameters; wherein the voltage drop parameters include: voltage drop amplitude parameters, voltage drop duration parameters, and voltage drop waveform parameters, and the voltage rise parameters include: voltage rise amplitude parameters, voltage rise duration parameters, and voltage rise waveform parameters.

[0020] Compared with existing technologies, the above embodiments have the following advantages: setting parameters for capacitive power output mode and inductive power output mode can simulate different power output conditions, enhancing the diversity of testing; setting symmetrical faults (i.e., low-voltage three-phase fault mode) and asymmetrical faults (i.e., low-voltage two-phase-to-phase faults and single-phase-to-ground faults) and symmetrical fault modes (i.e., three-phase symmetrical voltage rise faults) for low-voltage ride-through can simulate multiple fault types, improving the breadth of testing; setting fault level specification parameters covers faults of different severity levels, enhancing the comprehensiveness of testing.

[0021] In some embodiments of the first aspect of this application, evaluating the simulation test results to obtain the SVG fault ride-through capability index includes:

[0022] Calculate the index data in the simulation test results; wherein, the index data includes: the continuous running time of the SVG primary system and SVG controller hardware under each test condition, the dynamic reactive current rise time and the dynamic reactive current exit time, as well as the transient current duration and transient current adjustment ratio coefficient of the simulation model under each test condition.

[0023] The data of each preset index are compared to obtain the evaluation result, which serves as the SVG fault-crossing capability index.

[0024] Compared with the prior art, the above embodiments have the following beneficial effects: the index calculation under different operating conditions not only covers symmetrical fault conditions, but also takes into account asymmetrical fault conditions, making the evaluation closer to the complex situation in the actual power grid environment. It calculates various index data such as continuous running time, dynamic reactive current rise time and exit time, transient current duration and adjustment ratio coefficient under each test condition, ensuring that the evaluation basis is sufficient and detailed.

[0025] In some embodiments of the first aspect of this application, the transient current regulation ratio coefficient is calculated as follows:

[0026]

[0027] Among them, K LVSF and V lt These represent the transient reactive current regulation proportional coefficient and the per-unit value of the grid connection point voltage under the low-voltage three-phase fault mode, respectively, satisfying 0≤V lt ≤V SETL K HVSF and V ht These represent the transient reactive current regulation proportional coefficient and the per-unit value of the grid connection point voltage under the high-voltage three-phase symmetrical voltage rise fault mode, respectively, satisfying V SETH ≤V ht ≤1.3, ΔIt I represents the dynamic reactive current increment injected into the grid by the SVG. N This indicates the rated current of the SVG, in V. SETL This represents the voltage sag magnitude parameter, V. SETH K represents the voltage rise magnitude parameter. TPSRR K represents the transient positive sequence reactive current regulation ratio coefficient under low-voltage two-phase-to-phase fault mode or low-voltage single-phase-to-ground fault mode. TNSRR This represents the transient negative sequence reactive current regulation ratio coefficient under low-voltage two-phase phase-to-phase fault mode or low-voltage single-phase-to-ground fault mode. This represents the positive-sequence dynamic reactive current increment injected into the power grid by the SVG. This represents the increment of negative-sequence dynamic reactive current absorbed by the SVG from the power grid. This represents the per-unit value of the positive sequence voltage at the grid connection point under either a low-voltage two-phase-to-phase fault mode or a low-voltage single-phase-to-ground fault mode, satisfying... This indicates the per-unit value of the negative sequence voltage at the grid connection point under low-voltage two-phase phase-to-phase fault mode or low-voltage single-phase-to-ground fault mode.

[0028] Compared with the prior art, the above embodiments have the following beneficial effects: Through detailed calculation formulas (such as transient current adjustment ratio coefficient), the response characteristics of the SVG dynamic reactive power compensation device under different operating conditions can be accurately quantified, which significantly improves the accuracy and comprehensiveness of the evaluation; in addition, through standardized calculation formulas and evaluation methods, the results of each test are ensured to be comparable, which facilitates subsequent data analysis and the formulation of improvement measures.

[0029] Secondly, the present invention also provides an SVG fault-passing capability evaluation system based on HIL simulation, comprising: a parameter acquisition module, a simulation construction module, a test parameter setting module, a simulation execution module, and a result output module;

[0030] The parameter acquisition module is used to acquire the operating parameters of the photovoltaic power station, the operating parameters of the power grid, and the parameters of the SVG dynamic reactive power compensation device; wherein the SVG dynamic reactive power compensation device is an SVG device located within the photovoltaic power station.

[0031] The simulation construction module is used to construct a simulation model based on the operating parameters of the photovoltaic power station, the operating parameters of the power grid, and the parameters of the SVG dynamic reactive power compensation device, and to connect the simulation model and the SVG controller hardware; wherein, the simulation model includes: an equivalent model of the photovoltaic power station, an equivalent model of the power grid, an SVG primary system model, and a preset fault simulation module;

[0032] The test parameter setting module is used to set corresponding test parameter combinations for each test condition according to the preset fault ride-through test method; wherein, the test parameter combination includes: the power control strategy parameters of the SVG controller hardware, the equivalent impedance of the grid connection point of the power grid equivalent model, the power mode parameters and power ratio parameters of the SVG primary system model, and the fault triggering mode parameters and fault level specification parameters of the fault simulation module.

[0033] The simulation execution module is used to control the simulation model and SVG controller hardware to perform simulation according to the preset simulation algorithm and the combination of each test parameter, so as to obtain the simulation test results;

[0034] The result output module is used to evaluate the simulation test results and obtain the SVG fault ride capability index.

[0035] Compared with existing technologies, the above embodiments of this application have the following beneficial effects: By comprehensively acquiring relevant parameters, the authenticity and accuracy of simulation test data are ensured; a simulation model including a photovoltaic power station equivalent model, a power grid equivalent model, an SVG primary system model, and a fault simulation module is constructed to accurately simulate the actual operating environment, providing a foundation for subsequent comprehensive simulation of various operating conditions and improving the reliability of test results; by connecting the simulation model with the actual SVG controller hardware, this hardware-in-the-loop (HIL) simulation method makes the subsequent simulation consistent with the actual operation, and the fault simulation is closer to the actual scenario, which not only improves the accuracy and reliability of test results, but also enables the simulation of the actual operation of field equipment in a laboratory environment, improving flexibility; by setting corresponding combinations of test parameters according to different test conditions, a test basis is provided to reflect the performance of the SVG dynamic reactive power compensation device under different operating conditions, improving the comprehensiveness and authenticity of the test; by using a preset simulation algorithm for simulation, the performance of the equipment under different operating conditions can be effectively verified, providing reliable data support for subsequent evaluation; and by evaluating the simulation test results, the evaluation process is standardized, facilitating experimental comparison and improvement.

[0036] In some embodiments of the second aspect of this application, the test parameter setting module includes: a control strategy parameter setting unit and an equivalent impedance setting unit;

[0037] The control strategy parameter setting unit is used to set the power control strategy parameters according to each of the test conditions; wherein the power control strategy parameters are any one or more of the following: constant reactive power control strategy parameters, constant voltage control strategy parameters, and voltage-reactive power integrated control strategy parameters.

[0038] The equivalent impedance setting unit is used to set the equivalent impedance of the grid connection point according to each of the test conditions; wherein, the equivalent impedance of the grid connection point is any one or more of the following: the equivalent impedance of the grid connection point under the large method operation mode, the equivalent impedance of the grid connection point under the small method operation mode, and the equivalent impedance of the grid connection point under the normal operation mode.

[0039] Compared with existing technologies, the above embodiments have the following advantages: setting parameters for constant reactive power control strategy, constant voltage control strategy, and voltage-reactive power integrated control strategy ensures that different control strategies of the controller can be covered during the test, improving the comprehensiveness of the test; considering the equivalent impedance under large-method operation mode, small-method operation mode, and normal operation mode makes the test closer to the actual operation, enhancing the reliability of the test results.

[0040] In some embodiments of the second aspect of this application, the test parameter setting module further includes: a power mode parameter setting unit, a fault triggering mode parameter setting unit, and a fault level specification parameter setting unit;

[0041] The power mode parameter setting unit is used to set the power mode parameters according to each of the test conditions; wherein the power mode parameters include any one or more of the following: capacitive power output mode parameters and inductive power output mode parameters;

[0042] The fault triggering mode parameter setting unit is used to set the fault triggering mode parameters according to each of the test conditions. The fault triggering mode parameters include any one or more of the following: low voltage two-phase phase-to-phase fault mode parameters, low voltage single-phase ground fault mode parameters, low voltage three-phase fault mode parameters, and high voltage three-phase symmetrical voltage rise fault mode parameters.

[0043] The fault level specification parameter setting unit is used to set the fault level specification parameters according to each of the test conditions; wherein, the fault level specification parameters include any one or more of the following: voltage drop parameters and voltage rise parameters; wherein the voltage drop parameters include: voltage drop amplitude parameters, voltage drop duration parameters, and voltage drop waveform parameters, and the voltage rise parameters include: voltage rise amplitude parameters, voltage rise duration parameters, and voltage rise waveform parameters.

[0044] Compared with existing technologies, the above embodiments have the following advantages: setting parameters for capacitive power output mode and inductive power output mode can simulate different power output conditions, enhancing the diversity of testing; setting symmetrical faults (i.e., low-voltage three-phase fault mode) and asymmetrical faults (i.e., low-voltage two-phase-to-phase faults and single-phase-to-ground faults) and symmetrical fault modes (i.e., three-phase symmetrical voltage rise faults) for low-voltage ride-through can simulate multiple fault types, improving the breadth of testing; setting fault level specification parameters covers faults of different severity levels, enhancing the comprehensiveness of testing.

[0045] Thirdly, the present invention also provides an HIL-simulated SVG fault-travel capability assessment device, including a memory, a processor, and a computer program stored in the memory and executable on the processor. When the computer program is loaded onto the processor, it implements the steps of the HIL-simulated SVG fault-travel capability assessment method.

[0046] Fourthly, embodiments of this application also provide a computer-readable storage medium storing a computer program that, when executed by a processor, implements the steps of the HIL simulation SVG fault-crossing capability assessment method. Attached Figure Description

[0047] Figure 1 This is a flowchart illustrating a method for evaluating SVG fault-crossing capability using HIL simulation, provided in some embodiments of the present invention.

[0048] Figure 2 This is a schematic diagram of the structure of an SVG fault-passing capability assessment system based on HIL simulation provided in some embodiments of the present invention.

[0049] Figure 3 : This is a structural diagram of an SVG fault-crossing capability assessment device based on HIL simulation provided in some embodiments of the present invention.

[0050] Figure 4 This is a schematic diagram of the simulation test platform structure and simulation test interface of an SVG fault-crossing capability assessment method based on HIL simulation provided in some embodiments of the present invention.

[0051] Figure 5 This is a schematic diagram illustrating the requirements for low-voltage fault ride-through capability of photovoltaic power plants in GB / T 19964-2024 "Technical Regulations for Photovoltaic Power Plants Connected to Power Systems".

[0052] Figure 6This is a schematic diagram illustrating the requirements for low-voltage fault ride-through capability of photovoltaic power plants in GB / T 19964-2024 "Technical Regulations for Photovoltaic Power Plants Connected to Power Systems".

[0053] Figure 7 This is a schematic diagram illustrating the requirements for high-voltage fault ride-through capability of photovoltaic power plants in GB / T 19964-2024 "Technical Regulations for Photovoltaic Power Plants Connected to Power Systems".

[0054] Figure 8 This is a schematic diagram illustrating the requirements for high-voltage fault ride-through capability of photovoltaic power plants in GB / T 19964-2024 "Technical Regulations for Photovoltaic Power Plants Connected to Power Systems".

[0055] Figure 9 This is a schematic diagram of the fault level specification parameters under the low voltage ride-through test condition of an SVG fault ride-through capability assessment method based on HIL simulation provided in some embodiments of the present invention.

[0056] Figure 10 This is a schematic diagram of the fault level specification parameters under the high-voltage ride-through test condition of an SVG fault ride-through capability assessment method based on HIL simulation provided in some embodiments of the present invention.

[0057] Figure 11 : This is a schematic diagram illustrating the calculation of dynamic reactive current rise time provided in some embodiments of the present invention.

[0058] Figure 12 This is a schematic diagram of the low-voltage three-phase fault ride-through waveform of SVG at 20% capacitive power in some embodiments of the present invention.

[0059] Figure 13 This is a schematic diagram of the low-voltage three-phase fault ride-through waveform of the SVG under 20% capacitive power at some embodiments of the present invention.

[0060] Figure 14 The following is a schematic diagram of the low-voltage three-phase fault ride-through waveform of the SVG under 100% inductive power with a voltage of 20%.

[0061] Figure 15 This is a schematic diagram of the low-voltage three-phase fault ride-through waveform of the SVG under 20% inductive power at some embodiments of the present invention.

[0062] Figure 16 Schematic diagram of the test indicators and results of the three-phase symmetrical fault low voltage ride-through capability of SVG provided in some embodiments of the present invention. Detailed Implementation

[0063] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0064] Example 1:

[0065] Please refer to Figure 1 The present invention provides a method for evaluating the fault-crossing capability of SVG based on HIL simulation, comprising steps S1 to S5:

[0066] Step S1: Obtain the operating parameters of the photovoltaic power station, the operating parameters of the power grid, and the parameters of the SVG dynamic reactive power compensation device; wherein, the SVG dynamic reactive power compensation device is the SVG device in the photovoltaic power station.

[0067] In practical implementation, to ensure the accuracy and authenticity of subsequent hardware-in-the-loop (HIL) simulation test results, it is also necessary to verify the consistency between the controller hardware of the SVG dynamic reactive power compensation device and the actual equipment in the plant. Therefore, the parameters collected in step S1 need to include: the controller model and control software version number of the SVG dynamic reactive power compensation device, as well as the open tuning parameter settings, including high voltage ride-through protection settings, low voltage ride-through protection settings, frequency adaptability protection settings, voltage adaptability protection settings, current protection settings, PI parameters of voltage loop, current loop and phase-locked loop, etc., and active and reactive power control strategies related to fault ride-through, including symmetrical faults, asymmetrical faults, continuous ride-through faults, high frequency / low frequency and high voltage / low voltage related control strategies.

[0068] In this embodiment, step S1 ensures the authenticity and accuracy of the simulation test data by comprehensively acquiring relevant parameters.

[0069] Step S2: Based on the operating parameters of the photovoltaic power station, the operating parameters of the power grid, and the parameters of the SVG dynamic reactive power compensation device, construct a simulation model and connect the simulation model and the SVG controller hardware; wherein, the simulation model includes: an equivalent model of the photovoltaic power station, an equivalent model of the power grid, an SVG primary system model, and a preset fault simulation module.

[0070] In specific implementation, such as Figure 4The diagram shows the structure of the simulation test platform and the simulation test interface. After building the model on the simulation test platform in step S2, in order to realize hardware-in-the-loop (HIL) simulation test, it is also necessary to connect the wiring and connect to the actual control cabinet of the SVG according to the corresponding input-output relationship between the simulator in the simulation model and the SVG hardware controller under test, so as to realize the joint simulation of the hardware controller and the simulation model.

[0071] In this embodiment, step S2 constructs a simulation model that includes an equivalent model of a photovoltaic power station, an equivalent model of a power grid, an SVG primary system model, and a fault simulation module. This model accurately simulates the actual operating environment, providing a foundation for subsequent comprehensive simulation of various operating conditions and improving the reliability of test results. By connecting the simulation model with the actual SVG controller hardware, this hardware-in-the-loop (HIL) simulation method ensures that subsequent simulations are consistent with actual operations, and fault simulation is closer to the actual scenario. This not only improves the accuracy and reliability of test results but also enables the simulation of the actual operation of field equipment in a laboratory environment, thus increasing flexibility.

[0072] Step S3: According to the preset fault ride-through test method, set the corresponding test parameter combination for each test condition; wherein, the test parameter combination includes: the power control strategy parameters of the SVG controller hardware, the equivalent impedance of the grid connection point of the equivalent grid model, the power mode parameters and power ratio parameters of the SVG primary system model, and the fault triggering mode parameters and fault level specification parameters of the fault simulation module.

[0073] In specific implementation, such as Figure 5 and Figure 6 The diagram shown illustrates the requirements for low-voltage fault ride-through capability of photovoltaic power plants in GB / T 19964-2024 "Technical Regulations for Photovoltaic Power Plants Connected to Power Systems". Figure 7 and Figure 8 The schematic diagram shown illustrates the requirements for high-voltage fault ride-through capability of photovoltaic power plants in GB / T 19964-2024 "Technical Regulations for Photovoltaic Power Plants Connected to Power Systems". During testing, various test conditions need to be set up while meeting the relevant requirements. Preferably, step S3 can be implemented through the following preferred embodiments, including steps S31-S35, as detailed below:

[0074] S31: Set the power control strategy parameters according to each of the test conditions; wherein the power control strategy parameters are any one or more of the following: constant reactive power control strategy parameters, constant voltage control strategy parameters, and voltage-reactive power integrated control strategy parameters.

[0075] In practical implementation, the SVG controller hardware itself has built-in software programs representing different control strategies. In order to accurately simulate the actual operation of the actual site, the control strategy used by the actual site to which the device is applied needs to be selected during testing.

[0076] S32: Set the equivalent impedance of the grid connection point according to each of the test conditions; wherein the equivalent impedance of the grid connection point is any one or more of the following: the equivalent impedance of the grid connection point under the large-method operation mode, the equivalent impedance of the grid connection point under the small-method operation mode, and the equivalent impedance of the grid connection point under the normal operation mode.

[0077] In practical implementation, in order for the grid equivalent model to accurately simulate the actual operation of the power station, it is necessary not only to consider the typical value of the grid connection point of the photovoltaic power station under normal operation mode, but also to consider the different short-circuit ratios that may occur under large and small modes, and to set different grid equivalent impedances.

[0078] In this preferred embodiment, steps S31-S32, by setting parameters for constant reactive power control strategy, constant voltage control strategy, and voltage-reactive power integrated control strategy, ensure that different control strategies of the controller can be covered during the test, thus improving the comprehensiveness of the test. Considering the equivalent impedance under large-method operation mode, small-method operation mode, and normal operation mode, the test is closer to the actual operation, enhancing the reliability of the test results.

[0079] S33: Set the power mode parameters according to each of the test conditions; wherein the power mode parameters include any one or more of the following: capacitive power output mode parameters and inductive power output mode parameters.

[0080] In practice, to improve the comprehensiveness of the test, various power output conditions can be simulated, such as: capacitive low power output mode (20% of rated power), capacitive high power output mode (100% of rated power), inductive low power output mode (20% of rated power) and inductive high power output mode (100% of rated power). These different power output conditions can be further designed according to actual needs, and no restrictions are imposed here.

[0081] S34: Set the fault triggering mode parameters according to each of the test conditions, wherein the fault triggering mode parameters include any one or more of the following: low voltage two-phase phase-to-phase fault mode parameters, low voltage single-phase ground fault mode parameters, low voltage three-phase fault mode parameters, and high voltage three-phase symmetrical voltage rise fault mode parameters.

[0082] During low-voltage fault testing, the three types of faults—three-phase symmetrical fault, two-phase-to-phase fault, and single-phase-to-ground fault—can cover most low-voltage fault situations in practical applications. Three-phase symmetrical voltage rise fault is also the main high-voltage fault scenario in practical applications. The above four test modes are sufficient to cover most practical fault scenarios.

[0083] S35: Set the fault level specification parameters according to each of the test conditions; wherein the fault level specification parameters include any one or more of the following: voltage drop parameters and voltage rise parameters; wherein the voltage drop parameters include: voltage drop amplitude parameters, voltage drop duration parameters and voltage drop waveform parameters, and the voltage rise parameters include: voltage rise amplitude parameters, voltage rise duration parameters and voltage rise waveform parameters.

[0084] In specific implementation, such as Figure 9 The diagram showing the fault level specification parameters under the low voltage ride-through test condition and Figure 10 The diagram shown illustrates the fault level specifications under high voltage ride-through test conditions. When conducting low voltage fault tests and high voltage fault tests, multiple sets of parameter conditions should be set to ensure that the tests are thorough.

[0085] In this preferred embodiment, steps S33-S35, by setting parameters for capacitive power output mode and inductive power output mode, can simulate different power output conditions, enhancing the diversity of testing; setting symmetrical faults (i.e., low-voltage three-phase fault mode) and asymmetrical faults (i.e., low-voltage two-phase-to-phase faults and single-phase-to-ground faults) and symmetrical fault modes (i.e., three-phase symmetrical voltage rise faults) for low-voltage ride-through can simulate multiple fault types, improving the breadth of testing; setting fault level specification parameters covers faults of different severity levels, enhancing the comprehensiveness of testing.

[0086] Step S4: Based on the preset simulation algorithm and the combination of each test parameter, control the simulation model and SVG controller hardware to perform simulation and obtain simulation test results.

[0087] In practice, after each simulation, voltage, current and power data for each operating condition should be collected for subsequent analysis.

[0088] In this embodiment, step S4 uses a preset simulation algorithm to perform simulation, which can effectively verify the performance of the equipment under different operating conditions and provide reliable data support for subsequent evaluation.

[0089] Step S5: Evaluate the simulation test results to obtain the SVG fault ride-through capability index.

[0090] Preferably, step S5 can be implemented by the following preferred embodiments, including steps S51-S52, as follows:

[0091] S51: Calculate the index data in the simulation test results; wherein, the index data includes: the continuous running time of the SVG primary system and SVG controller hardware under each test condition, the dynamic reactive current rise time and the dynamic reactive current exit time, and the transient current duration and transient current adjustment ratio coefficient of the simulation model under each test condition.

[0092] Furthermore, the transient current regulation proportional coefficient is calculated as follows:

[0093]

[0094] Among them, K LVSF and V lt These represent the transient reactive current regulation proportional coefficient and the per-unit value of the grid connection point voltage under the low-voltage three-phase fault mode, respectively, satisfying 0≤V lt ≤V SETL K HVSF and V ht These represent the transient reactive current regulation proportional coefficient and the per-unit value of the grid connection point voltage under the high-voltage three-phase symmetrical voltage rise fault mode, respectively, satisfying V SETH ≤V ht ≤1.3, ΔI t I represents the dynamic reactive current increment injected into the grid by the SVG. N This indicates the rated current of the SVG, in V. SETL This represents the voltage sag magnitude parameter, V. SETH K represents the voltage rise magnitude parameter. TPSRR K represents the transient positive sequence reactive current regulation ratio coefficient under low-voltage two-phase-to-phase fault mode or low-voltage single-phase-to-ground fault mode. TNSRR This represents the transient negative sequence reactive current regulation ratio coefficient under low-voltage two-phase phase-to-phase fault mode or low-voltage single-phase-to-ground fault mode. This represents the positive-sequence dynamic reactive current increment injected into the power grid by the SVG. This represents the increment of negative-sequence dynamic reactive current absorbed by the SVG from the power grid. This represents the per-unit value of the positive sequence voltage at the grid connection point under either a low-voltage two-phase-to-phase fault mode or a low-voltage single-phase-to-ground fault mode, satisfying... This indicates the per-unit value of the negative sequence voltage at the grid connection point under low-voltage two-phase phase-to-phase fault mode or low-voltage single-phase-to-ground fault mode.

[0095] S52: Compare the index data according to each preset index to obtain the evaluation result, which serves as the SVG fault-crossing capability index.

[0096] In practical implementation, the evaluation and testing results should be conducted with reference to the relevant provisions of standards GB / T 19964-2024 "Technical Regulations for Photovoltaic Power Station Connection to Power System" and GB / T 34931-2017 "Technical Specifications for Testing Reactive Power Compensation Devices in Photovoltaic Power Stations".

[0097] The continuous operating time can be calculated from the reactive power curves of the SVG primary system and SVG controller hardware under different operating conditions, and it can be determined whether the requirement of non-offline operation can be met under all operating conditions.

[0098] The duration of the transient current can be directly compared with the indicators in the relevant regulations.

[0099] The rise time of the dynamic reactive current should not exceed 30ms, such as Figure 11 The diagram shown illustrates the calculation of the dynamic reactive current rise time. The rise time is the time from when the grid connection point voltage drops or rises to the trigger set value V. SETL (i.e., the voltage drop amplitude parameter set during testing) or V SETH Starting from the voltage rise amplitude parameter set during the test, the time required for the dynamic reactive current increment of the photovoltaic power station to reach 90% of the incremental target value is calculated. Assuming the per-unit voltage triggering low-voltage ride-through is 0.90 pu, then the time from the moment the voltage drops to 0.90 pu until the dynamic reactive current increment reaches 90% of the stable reactive current is the reactive current rise time (i.e., the time required for the dynamic reactive current increment to reach 90% of the stable reactive current). Figure 11 The system response time t up ).

[0100] The dynamic reactive current exit time is the time required from the start of the grid connection point voltage recovering to the trigger set value to the recovery of the dynamic reactive current of the photovoltaic power station to the initial value, and should not exceed 30ms.

[0101] The calculation method of the transient current regulation ratio coefficient is different under different fault modes. It is divided into symmetrical fault mode with low voltage ride-through, asymmetrical fault mode with low voltage ride-through, and symmetrical fault mode with high voltage ride-through. The specific calculation is as shown in step S51 above.

[0102] In a symmetrical fault mode with low voltage ride-through (i.e., a three-phase low voltage fault mode), when the grid connection point voltage rises to the trigger set value V... SETL At that time, the reactive current injected into the grid by the SVG dynamic reactive power compensation device should be the reactive current output value I0 during normal operation before the voltage drop plus the dynamic reactive current increment ΔI. t The sum of these, and the transient reactive current regulation proportional coefficient K. LVSF It should be no less than 1.5.

[0103] In the symmetrical fault mode of high voltage ride-through (i.e., three-phase symmetrical voltage rise fault), when the grid connection point voltage rises to the trigger set value V SETH At that time, the reactive current injected into the grid by the SVG dynamic reactive power compensation device should be the reactive current output value I0 during normal operation before the voltage rise and the dynamic reactive current increment ΔI. t The difference is the transient reactive current regulation proportional coefficient K. HVSF It should be no less than 1.5.

[0104] Under asymmetric fault modes of low-voltage ride-through (i.e., low-voltage two-phase-to-phase faults and single-phase-to-ground faults), the positive sequence component of the grid connection point voltage... When the nominal voltage is between 60% and 90%, the positive-sequence reactive current injected into the power grid by the dynamic reactive power compensation device should be the positive-sequence reactive current output value during normal operation before the voltage drop. With positive sequence dynamic reactive current increment The sum of these two values ​​indicates that the negative sequence reactive current absorbed from the grid should be equal to the negative sequence reactive current output value during normal operation before the voltage drop. With negative sequence dynamic reactive current increment The difference is the transient positive sequence reactive current regulation proportional coefficient K. TPSRR The transient negative sequence reactive current regulation proportional coefficient K should be not less than 1. TNSRR It should be no less than 1.

[0105] Taking the SVG dynamic reactive power compensation device in a real 110kV photovoltaic power station as an example, the fault ride-through capability under a three-phase low-voltage fault with a voltage amplitude drop to 0.20pu is evaluated, and the voltage, current, and power waveforms are recorded. The results are as follows: Figure 12 The diagram shows the low-voltage three-phase fault ride-through waveform of the SVG under 100% capacitive power with a 20% undervoltage condition. Figure 13 The diagram shows the low-voltage three-phase fault ride-through waveform of the SVG under 20% capacitive power. Figure 14 The diagram shows the low-voltage three-phase fault ride-through waveform of the SVG at 100% inductive power with a low voltage of 20%. Figure 15 The diagram shown illustrates the low-voltage three-phase fault ride-through waveform of the SVG under 20% inductive power, with a 20% undervoltage three-phase fault. The final evaluation results are as follows. Figure 16 The diagram shown illustrates the test parameters and results of the SVG's three-phase symmetrical fault low-voltage ride-through capability. Under this operating condition, when the initial reactive power of the reactive power compensation device is set to 100% capacitive power, the transient current regulation ratio K... LVSF The requirement is not met, but all other indicators are qualified.

[0106] In this preferred embodiment, step S5, which calculates indicators under different operating conditions, not only covers symmetrical fault conditions but also specifically considers asymmetrical fault conditions. This makes the evaluation more closely resemble the complex situations in the actual power grid environment. Through detailed calculation formulas (such as the transient current adjustment ratio coefficient), the response characteristics of the SVG dynamic reactive power compensation device under different operating conditions can be accurately quantified, significantly improving the accuracy and comprehensiveness of the evaluation. Furthermore, through standardized calculation formulas and evaluation methods, the results of each test are ensured to be comparable, facilitating subsequent data analysis and the formulation of improvement measures. The calculation of various indicator data, such as the continuous operating time, dynamic reactive current rise time and exit time, transient current duration, and adjustment ratio coefficient under each test condition, ensures that the evaluation basis is sufficient and detailed.

[0107] In summary, compared with the prior art, the above embodiments of this application have the following beneficial effects: By comprehensively acquiring relevant parameters, the authenticity and accuracy of simulation test data are ensured; a simulation model including a photovoltaic power station equivalent model, a power grid equivalent model, an SVG primary system model, and a fault simulation module is constructed to accurately simulate the actual operating environment, providing a foundation for subsequent comprehensive simulation of various operating conditions and improving the reliability of test results; by connecting the simulation model with the actual SVG controller hardware, this hardware-in-the-loop (HIL) simulation method makes the subsequent simulation consistent with the actual operation, and the fault simulation is closer to the actual scenario, which not only improves the accuracy and reliability of test results, but also enables the simulation of the actual operation of field equipment in a laboratory environment, improving flexibility; by setting corresponding combinations of test parameters according to different test conditions, a test basis is provided to reflect the performance of the SVG dynamic reactive power compensation device under different operating conditions, improving the comprehensiveness and authenticity of the test; by using a preset simulation algorithm for simulation, the performance of the equipment under different operating conditions can be effectively verified, providing reliable data support for subsequent evaluation; and by evaluating the simulation test results, the evaluation process is standardized, facilitating experimental comparison and improvement.

[0108] Example 2:

[0109] Please refer to Figure 2 The present invention discloses an SVG fault-crossing capability evaluation system based on HIL simulation, comprising: a parameter acquisition module M1, a simulation construction module M2, a test parameter setting module M3, a simulation execution module M4, and a result output module M5;

[0110] The parameter acquisition module M1 is used to acquire the operating parameters of the photovoltaic power station, the operating parameters of the power grid, and the parameters of the SVG dynamic reactive power compensation device; wherein the SVG dynamic reactive power compensation device is an SVG device located within the photovoltaic power station.

[0111] In this embodiment, the parameter acquisition module M1 ensures the authenticity and accuracy of the simulation test data by comprehensively acquiring relevant parameters.

[0112] The simulation construction module M2 is used to construct a simulation model based on the operating parameters of the photovoltaic power station, the operating parameters of the power grid, and the parameters of the SVG dynamic reactive power compensation device, and to connect the simulation model and the SVG controller hardware.

[0113] The simulation model includes: an equivalent model of a photovoltaic power station, an equivalent model of a power grid, an SVG primary system model, and a preset fault simulation module.

[0114] In this embodiment, the simulation construction module M2 constructs a simulation model that includes an equivalent model of a photovoltaic power station, an equivalent model of a power grid, an SVG primary system model, and a fault simulation module. This model accurately simulates the actual operating environment, providing a foundation for subsequent comprehensive simulation of various operating conditions and improving the reliability of test results. By connecting the simulation model with the actual SVG controller hardware, this hardware-in-the-loop (HIL) simulation method ensures that subsequent simulations are consistent with actual operation, and fault simulation is closer to the actual scenario. This not only improves the accuracy and reliability of test results but also enables the simulation of the actual operation of field equipment in a laboratory environment, thus increasing flexibility.

[0115] The test parameter setting module M3 is used to set corresponding test parameter combinations for each test condition according to the preset fault ride-through test method.

[0116] The test parameter combination includes: the power control strategy parameters of the SVG controller hardware, the equivalent impedance of the grid connection point of the equivalent power grid model, the power mode parameters and power ratio parameters of the SVG primary system model, and the fault triggering mode parameters and fault level specification parameters of the fault simulation module.

[0117] The test parameter setting module M3 includes: a control strategy parameter setting unit and an equivalent impedance setting unit;

[0118] The control strategy parameter setting unit is used to set the power control strategy parameters according to each of the test conditions; wherein the power control strategy parameters are any one or more of the following: constant reactive power control strategy parameters, constant voltage control strategy parameters, and voltage-reactive power integrated control strategy parameters.

[0119] The equivalent impedance setting unit is used to set the equivalent impedance of the grid connection point according to each of the test conditions; wherein, the equivalent impedance of the grid connection point is any one or more of the following: the equivalent impedance of the grid connection point under the large method operation mode, the equivalent impedance of the grid connection point under the small method operation mode, and the equivalent impedance of the grid connection point under the normal operation mode.

[0120] In this preferred embodiment, the test parameter setting module M3 ensures that different control strategies of the controller can be covered during the test by setting parameters for constant reactive power control strategy, constant voltage control strategy, and voltage-reactive power integrated control strategy, thereby improving the comprehensiveness of the test. It also considers the equivalent impedance under large-method operation mode, small-method operation mode, and normal operation mode, making the test closer to the actual operation and enhancing the reliability of the test results.

[0121] Furthermore, the test parameter setting module M3 also includes: a power mode parameter setting unit, a fault triggering mode parameter setting unit, and a fault level specification parameter setting unit;

[0122] The power mode parameter setting unit is used to set the power mode parameters according to each of the test conditions; wherein the power mode parameters include any one or more of the following: capacitive power output mode parameters and inductive power output mode parameters.

[0123] The fault triggering mode parameter setting unit is used to set the fault triggering mode parameters according to each of the test conditions. The fault triggering mode parameters include any one or more of the following: low voltage two-phase phase-to-phase fault mode parameters, low voltage single-phase ground fault mode parameters, low voltage three-phase fault mode parameters, and high voltage three-phase symmetrical voltage rise fault mode parameters.

[0124] The fault level specification parameter setting unit is used to set the fault level specification parameters according to each of the test conditions; wherein, the fault level specification parameters include any one or more of the following: voltage drop parameters and voltage rise parameters; wherein the voltage drop parameters include: voltage drop amplitude parameters, voltage drop duration parameters, and voltage drop waveform parameters, and the voltage rise parameters include: voltage rise amplitude parameters, voltage rise duration parameters, and voltage rise waveform parameters.

[0125] In this preferred embodiment, the test parameter setting module M3 can simulate different power output conditions by setting parameters for capacitive power output mode and inductive power output mode, thereby enhancing the diversity of testing; it can set symmetrical faults (i.e., low-voltage three-phase fault mode) and asymmetrical faults (i.e., low-voltage two-phase-to-phase faults and single-phase-to-ground faults) and symmetrical fault modes (i.e., three-phase symmetrical voltage rise faults) for low-voltage ride-through, thereby simulating multiple fault types and improving the breadth of testing; and it can set fault level specification parameters, covering faults of different severity levels, thereby improving the comprehensiveness of testing.

[0126] The simulation execution module M4 is used to control the simulation model and SVG controller hardware to perform simulation according to the preset simulation algorithm and the combination of test parameters, so as to obtain the simulation test results.

[0127] In this embodiment, the simulation execution module M4 uses a preset simulation algorithm to perform simulation, which can effectively verify the performance of the equipment under different operating conditions and provide reliable data support for subsequent evaluation.

[0128] The result output module M5 is used to evaluate the simulation test results and obtain the SVG fault ride capability index.

[0129] The result output module M5 includes: an index calculation unit and an evaluation unit;

[0130] The index calculation unit is used to calculate the index data in the simulation test results. The index data includes: the continuous running time, dynamic reactive current rise time and dynamic reactive current exit time of the SVG primary system and SVG controller hardware under each test condition, and the transient current duration and transient current adjustment ratio coefficient of the simulation model under each test condition.

[0131] Furthermore, the transient current regulation proportional coefficient is calculated as follows:

[0132]

[0133] Among them, K LVSF and V lt These represent the transient reactive current regulation proportional coefficient and the per-unit value of the grid connection point voltage under the low-voltage three-phase fault mode, respectively, satisfying 0≤V lt ≤V SETL K HVSF and V ht These represent the transient reactive current regulation proportional coefficient and the per-unit value of the grid connection point voltage under the high-voltage three-phase symmetrical voltage rise fault mode, respectively, satisfying V SETH ≤V ht ≤1.3, ΔI t I represents the dynamic reactive current increment injected into the grid by the SVG. N This indicates the rated current of the SVG, in V. SETL This represents the voltage sag magnitude parameter, V. SETH K represents the voltage rise magnitude parameter. TPSRR K represents the transient positive sequence reactive current regulation ratio coefficient under low-voltage two-phase-to-phase fault mode or low-voltage single-phase-to-ground fault mode. TNSRR This represents the transient negative sequence reactive current regulation ratio coefficient under low-voltage two-phase phase-to-phase fault mode or low-voltage single-phase-to-ground fault mode. This represents the positive-sequence dynamic reactive current increment injected into the power grid by the SVG. This represents the increment of negative-sequence dynamic reactive current absorbed by the SVG from the power grid. This represents the per-unit value of the positive sequence voltage at the grid connection point under either a low-voltage two-phase-to-phase fault mode or a low-voltage single-phase-to-ground fault mode, satisfying... This indicates the per-unit value of the negative sequence voltage at the grid connection point under low-voltage two-phase phase-to-phase fault mode or low-voltage single-phase-to-ground fault mode.

[0134] The evaluation unit is used to compare the index data according to each preset index to obtain the evaluation result, which serves as the SVG fault-crossing capability index.

[0135] In this preferred embodiment, the result output module M5 calculates indicators under different operating conditions, covering not only symmetrical fault conditions but also asymmetrical fault conditions. This makes the evaluation more closely resemble the complex situations in the actual power grid environment. Through detailed calculation formulas (such as the transient reactive current adjustment ratio coefficient), the response characteristics of the SVG dynamic reactive power compensation device under different operating conditions can be accurately quantified, significantly improving the accuracy and comprehensiveness of the evaluation. Furthermore, through standardized calculation formulas and evaluation methods, the results of each test are ensured to be comparable, facilitating subsequent data analysis and the formulation of improvement measures. The calculation of various indicator data, such as continuous operating time, dynamic reactive current rise time and exit time, transient current duration and adjustment ratio coefficient, under each test condition ensures that the evaluation basis is sufficient and detailed.

[0136] In summary, compared with existing technologies, the embodiments of this application have the following beneficial effects: By comprehensively acquiring relevant parameters, the authenticity and accuracy of simulation test data are ensured; a simulation model including an equivalent model of a photovoltaic power station, an equivalent model of a power grid, an SVG primary system model, and a fault simulation module is constructed to accurately simulate the actual operating environment, providing a foundation for subsequent comprehensive simulation of various operating conditions and improving the reliability of test results; by connecting the simulation model with the actual SVG controller hardware, this hardware-in-the-loop (HIL) simulation method makes subsequent simulation consistent with actual operation, and fault simulation is closer to the actual scenario, which not only improves the accuracy and reliability of test results, but also enables the simulation of the actual operation of field equipment in a laboratory environment, improving flexibility; by setting corresponding combinations of test parameters according to different test conditions, a test basis is provided to reflect the performance of the SVG dynamic reactive power compensation device under different operating conditions, improving the comprehensiveness and authenticity of the test; by using a preset simulation algorithm for simulation, the performance of the equipment under different operating conditions can be effectively verified, providing reliable data support for subsequent evaluation; and by evaluating the simulation test results, the evaluation process is standardized, facilitating experimental comparison and improvement.

[0137] The above-described division of modules is only a logical functional division. In actual implementation, there may be other division methods, such as multiple modules being combined or integrated into another system.

[0138] Example 3:

[0139] Figure 3 A structural diagram of an SVG fault-passing capability assessment device based on HIL simulation, as described in this application, is presented. Figure 3 As shown, the SVG fault-crossing capability assessment device simulated by HIL may include: processor N1, memory N2, data interface N3, and communication bus N4.

[0140] Wherein: processor N1, memory N2, and data interface N3 communicate with each other through communication bus N4; data interface N3 is used for data communication with other devices such as input devices or output devices; processor N1 is used to execute program N5, specifically to execute the relevant steps in the above embodiment of the SVG fault-crossing capability assessment method for HIL simulation.

[0141] Specifically, program N5 may include program code, which includes computer-executable instructions.

[0142] The processor N1 may be a central processing unit (CPU), an application-specific integrated circuit (ASIC), or one or more integrated circuits configured to implement the embodiments of this application. The HIL-emulated SVG fault-travel capability assessment device includes one or more processors, which may be processors of the same type, such as one or more CPUs, or processors of different types, such as one or more CPUs and one or more ASICs.

[0143] Memory N2 is used to store program N5. Memory N2 may include high-speed RAM memory, and may also include non-volatile memory, such as at least one disk storage.

[0144] The algorithms or displays provided herein are not inherently related to any particular computer, virtual system, or other device. Furthermore, the embodiments in this application are not directed to any particular programming language.

[0145] Example 4:

[0146] This invention also provides a computer-readable storage medium storing at least one executable instruction that, when executed on a HIL-simulated SVG fault-traversal capability assessment device / system, causes the HIL-simulated SVG fault-traversal capability assessment device / system to perform the HIL-simulated SVG fault-traversal capability assessment method in any of the above method embodiments.

[0147] Numerous specific details are set forth in the specification provided herein. However, it will be understood that embodiments of this application may be practiced without these specific details. Similarly, for the purpose of simplification and aiding understanding of one or more aspects of the invention, in the above description of exemplary embodiments of this application, various features of the embodiments are sometimes grouped together in a single embodiment, figure, or description thereof. The claims, which follow the detailed description, are hereby expressly incorporated into that detailed description, wherein each claim itself is a separate embodiment of this application.

[0148] Those skilled in the art will understand that the modules in the device of the embodiment can be adaptively changed and placed in one or more devices different from that embodiment. Modules, units, or components in the embodiment can be combined into a single module, unit, or component, and further, they can be divided into multiple sub-modules, sub-units, or sub-components, except that at least some of such features and / or processes or units are mutually exclusive.

Claims

1. A method for evaluating the fault-passing capability of SVG based on HIL simulation, characterized in that, include: The system acquires operating parameters of the photovoltaic power plant, grid operating parameters, and parameters of the SVG dynamic reactive power compensation device; wherein the SVG dynamic reactive power compensation device is an SVG device located within the photovoltaic power plant. Based on the operating parameters of the photovoltaic power station, the operating parameters of the power grid, and the parameters of the SVG dynamic reactive power compensation device, a simulation model is constructed, and the simulation model and the SVG controller hardware are connected; wherein, the simulation model includes: an equivalent model of the photovoltaic power station, an equivalent model of the power grid, an SVG primary system model, and a preset fault simulation module; According to the preset fault ride-through test method, corresponding test parameter combinations are set for each test condition; wherein, the test parameter combinations include: the power control strategy parameters of the SVG controller hardware, the equivalent impedance of the grid connection point of the power grid equivalent model, the power mode parameters and power ratio parameters of the SVG primary system model, and the fault triggering mode parameters and fault level specification parameters of the fault simulation module. Based on the preset simulation algorithm and the combination of various test parameters, the simulation model and SVG controller hardware are controlled to perform simulation and obtain simulation test results; The simulation test results are evaluated to obtain the SVG fault ride-through capability index; The evaluation of the simulation test results to obtain the SVG fault ride-through capability index includes: Calculate the index data in the simulation test results; wherein, the index data includes: the continuous running time of the SVG primary system and SVG controller hardware under each test condition, the dynamic reactive current rise time and the dynamic reactive current exit time, as well as the transient current duration and transient current adjustment ratio coefficient of the simulation model under each test condition. The data of the indicators are compared according to each preset indicator to obtain the evaluation result, which is used as the SVG fault-crossing capability indicator. The transient current regulation ratio coefficient is calculated as follows: Among them, K LVSF and V lt These represent the transient reactive current regulation proportional coefficient and the per-unit value of the grid connection point voltage under the low-voltage three-phase fault mode, respectively, satisfying 0≤V lt ≤V SETL K HVSF and V ht These represent the transient reactive current regulation proportional coefficient and the per-unit value of the grid connection point voltage under the high-voltage three-phase symmetrical voltage rise fault mode, respectively, satisfying V SETH ≤V ht ≤1.3, ΔI t I represents the dynamic reactive current increment injected into the grid by the SVG. N This indicates the rated current of the SVG, in V. SETL This represents the voltage sag magnitude parameter, V. SETH K represents the voltage rise magnitude parameter. TPSRR K represents the transient positive sequence reactive current regulation ratio coefficient under low-voltage two-phase-to-phase fault mode or low-voltage single-phase-to-ground fault mode. TNSRR This represents the transient negative sequence reactive current regulation ratio coefficient under low-voltage two-phase phase-to-phase fault mode or low-voltage single-phase-to-ground fault mode. This represents the positive-sequence dynamic reactive current increment injected into the power grid by the SVG. This represents the increment of negative-sequence dynamic reactive current absorbed by the SVG from the power grid. This represents the per-unit value of the positive sequence voltage at the grid connection point under either a low-voltage two-phase-to-phase fault mode or a low-voltage single-phase-to-ground fault mode, satisfying... This indicates the per-unit value of the negative sequence voltage at the grid connection point under low-voltage two-phase phase-to-phase fault mode or low-voltage single-phase ground fault mode.

2. The method for evaluating SVG fault-passing capability using HIL simulation as described in claim 1, characterized in that, The step of setting corresponding test parameter combinations for each test condition according to a preset fault ride-through test method includes: According to each of the test conditions, the power control strategy parameters are set; wherein, the power control strategy parameters are any one or more of the following: constant reactive power control strategy parameters, constant voltage control strategy parameters, and voltage-reactive power integrated control strategy parameters; According to each of the test conditions, the equivalent impedance of the grid connection point is set; wherein, the equivalent impedance of the grid connection point is any one or more of the following: the equivalent impedance of the grid connection point under the large-method operation mode, the equivalent impedance of the grid connection point under the small-method operation mode, and the equivalent impedance of the grid connection point under the normal operation mode.

3. The method for evaluating SVG fault-passing capability using HIL simulation as described in claim 2, characterized in that, The step of setting corresponding test parameter combinations for each test condition according to a preset fault ride-through test method also includes: According to each of the test conditions, the power mode parameters are set; wherein, the power mode parameters include any one or more of the following: capacitive power output mode parameters and inductive power output mode parameters; According to each of the test conditions, the fault triggering mode parameters are set, wherein the fault triggering mode parameters include any one or more of the following: low voltage two-phase phase-to-phase fault mode parameters, low voltage single-phase ground fault mode parameters, low voltage three-phase fault mode parameters, and high voltage three-phase symmetrical voltage rise fault mode parameters. According to each of the test conditions, the fault level specification parameters are set; wherein, the fault level specification parameters include any one or more of the following: voltage drop parameters and voltage rise parameters; wherein the voltage drop parameters include: voltage drop amplitude parameters, voltage drop duration parameters, and voltage drop waveform parameters, and the voltage rise parameters include: voltage rise amplitude parameters, voltage rise duration parameters, and voltage rise waveform parameters.

4. A HIL simulation-based SVG fault-passing capability assessment system, characterized in that, include: The system includes a parameter acquisition module, a simulation construction module, a test parameter setting module, a simulation execution module, and a result output module. The parameter acquisition module is used to acquire the operating parameters of the photovoltaic power station, the operating parameters of the power grid, and the parameters of the SVG dynamic reactive power compensation device; wherein the SVG dynamic reactive power compensation device is an SVG device located within the photovoltaic power station. The simulation construction module is used to construct a simulation model based on the operating parameters of the photovoltaic power station, the operating parameters of the power grid, and the parameters of the SVG dynamic reactive power compensation device, and to connect the simulation model and the SVG controller hardware; wherein, the simulation model includes: an equivalent model of the photovoltaic power station, an equivalent model of the power grid, an SVG primary system model, and a preset fault simulation module; The test parameter setting module is used to set corresponding test parameter combinations for each test condition according to the preset fault ride-through test method; wherein, the test parameter combination includes: the power control strategy parameters of the SVG controller hardware, the equivalent impedance of the grid connection point of the power grid equivalent model, the power mode parameters and power ratio parameters of the SVG primary system model, and the fault triggering mode parameters and fault level specification parameters of the fault simulation module. The simulation execution module is used to control the simulation model and SVG controller hardware to perform simulation according to the preset simulation algorithm and the combination of each test parameter, so as to obtain the simulation test results; The result output module is used to evaluate the simulation test results and obtain the SVG fault ride capability index. The result output module includes: an index calculation unit and an evaluation unit; The index calculation unit is used to calculate the index data in the simulation test results; wherein the index data includes: the continuous running time of the SVG primary system and SVG controller hardware under each test condition, the dynamic reactive current rise time and the dynamic reactive current exit time, and the transient current duration and transient current adjustment ratio coefficient of the simulation model under each test condition. Furthermore, the transient current regulation proportional coefficient is calculated as follows: Among them, K LVSF and V lt These represent the transient reactive current regulation proportional coefficient and the per-unit value of the grid connection point voltage under the low-voltage three-phase fault mode, respectively, satisfying 0≤V lt ≤V SETL K HVSF and V ht These represent the transient reactive current regulation proportional coefficient and the per-unit value of the grid connection point voltage under the high-voltage three-phase symmetrical voltage rise fault mode, respectively, satisfying V SETH ≤V ht ≤1.3, ΔI t I represents the dynamic reactive current increment injected into the grid by the SVG. N This indicates the rated current of the SVG, in V. SETL This represents the voltage sag magnitude parameter, V. SETH K represents the voltage rise magnitude parameter. TPSRR K represents the transient positive sequence reactive current regulation ratio coefficient under low-voltage two-phase-to-phase fault mode or low-voltage single-phase-to-ground fault mode. TNSRR This represents the transient negative sequence reactive current regulation ratio coefficient under low-voltage two-phase phase-to-phase fault mode or low-voltage single-phase-to-ground fault mode. This represents the positive-sequence dynamic reactive current increment injected into the power grid by the SVG. This represents the increment of negative-sequence dynamic reactive current absorbed by the SVG from the power grid. This represents the per-unit value of the positive sequence voltage at the grid connection point under either a low-voltage two-phase-to-phase fault mode or a low-voltage single-phase-to-ground fault mode, satisfying... This indicates the per-unit value of the negative sequence voltage at the grid connection point under low-voltage two-phase phase-to-phase fault mode or low-voltage single-phase-to-ground fault mode. The evaluation unit is used to compare the index data according to each preset index to obtain the evaluation result, which serves as the SVG fault-crossing capability index.

5. The HIL simulation-based SVG fault-passing capability assessment system as described in claim 4, characterized in that, The test parameter setting module includes: a control strategy parameter setting unit and an equivalent impedance setting unit; The control strategy parameter setting unit is used to set the power control strategy parameters according to each of the test conditions; wherein the power control strategy parameters are any one or more of the following: constant reactive power control strategy parameters, constant voltage control strategy parameters, and voltage-reactive power integrated control strategy parameters. The equivalent impedance setting unit is used to set the equivalent impedance of the grid connection point according to each of the test conditions; wherein, the equivalent impedance of the grid connection point is any one or more of the following: the equivalent impedance of the grid connection point under the large method operation mode, the equivalent impedance of the grid connection point under the small method operation mode, and the equivalent impedance of the grid connection point under the normal operation mode.

6. The HIL simulation-based SVG fault-passing capability assessment system as described in claim 5, characterized in that, The test parameter setting module further includes: a power mode parameter setting unit, a fault triggering mode parameter setting unit, and a fault level specification parameter setting unit; The power mode parameter setting unit is used to set the power mode parameters according to each of the test conditions; wherein the power mode parameters include any one or more of the following: capacitive power output mode parameters and inductive power output mode parameters; The fault triggering mode parameter setting unit is used to set the fault triggering mode parameters according to each of the test conditions. The fault triggering mode parameters include any one or more of the following: low voltage two-phase phase-to-phase fault mode parameters, low voltage single-phase ground fault mode parameters, low voltage three-phase fault mode parameters, and high voltage three-phase symmetrical voltage rise fault mode parameters. The fault level specification parameter setting unit is used to set the fault level specification parameters according to each of the test conditions; wherein, the fault level specification parameters include any one or more of the following: voltage drop parameters and voltage rise parameters; wherein the voltage drop parameters include: voltage drop amplitude parameters, voltage drop duration parameters, and voltage drop waveform parameters, and the voltage rise parameters include: voltage rise amplitude parameters, voltage rise duration parameters, and voltage rise waveform parameters.

7. A HIL-simulated SVG fault-passing capability assessment device, comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, characterized in that, When the computer program is loaded into the processor, it implements the steps of the SVG fault-passing capability assessment method based on HIL simulation according to any one of claims 1-3.

8. A computer-readable storage medium storing a computer program, characterized in that, When the computer program is executed by the processor, it implements the steps of the SVG fault-passing capability evaluation method based on HIL simulation according to any one of claims 1-3.

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