Surface acoustic wave resonator, filter and electronic equipment

By embedding the electrode fingers of the interdigit transducer into the piezoelectric layer of the surface acoustic wave resonator, the problems of spurious wave increase and Q value fluctuation caused by the lateral resonance mode are solved, and more efficient electrical and mechanical energy conversion and a more stable structure are achieved, improving the performance of the surface acoustic wave resonator.

CN120090594APending Publication Date: 2025-06-03ZHEJIANG STARSHINE SEMICON CO LTD
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Patent Information

Application Number
CN202510196734.X
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-02-21
Publication Date
2025-06-03

AI Technical Summary

Technical Problem

Existing surface acoustic wave resonators are prone to lateral resonance modes when propagating sound waves in a transverse direction, resulting in an increase in stray waves, fluctuations in Q value, and degrading device performance.

Method used

By embedding at least part of the electrode fingers of the interdigit transducer into the piezoelectric layer and the depth of the embedded in the direction perpendicular to the substrate plane is not less than 0.02λ, efficient conversion and stable combination of electrical and mechanical energy is achieved, thereby suppressing stray waves.

Benefits of technology

Effectively reduce the in-band spurs of the surface acoustic wave resonator, improve the Q value of the resonator, and comprehensively improve the performance of the surface acoustic wave resonator.

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Abstract

The invention discloses a surface acoustic wave resonator, a filter and electronic equipment, and relates to the technical field of radio frequency, compared with an interdigital transducer in an existing surface acoustic wave resonator which is located on the surface, away from a substrate, of a piezoelectric layer, the surface acoustic wave resonator is characterized in that at least part of electrode fingers of the interdigital transducer are embedded into the piezoelectric layer; the depth of the portion, embedded into the piezoelectric layer, of the interdigital transducer is not smaller than 0.02 lambda, and lambda is the wavelength of sound waves transmitted in the surface acoustic wave resonator, so that on one hand, the piezoelectric layer can achieve efficient conversion of electric energy and mechanical energy through the piezoelectric effect, and energy loss is reduced; and on the other hand, the piezoelectric layer and the interdigital transducer are combined more stably, so that stray waves of the surface acoustic wave resonator can be effectively inhibited, in-band stray of the surface acoustic wave resonator is obviously weakened, the Q value of the resonator is further improved, and the performance of the surface acoustic wave resonator is comprehensively improved.
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