Solar cell and photovoltaic module
By optimizing the distribution of N-type and P-type doped layers and the spacing of adjacent collecting gate lines in solar cells, the problem of improper coordination of factors is solved, and the photoelectric conversion efficiency is improved.
CN120264857APending Publication Date: 2025-07-04LONGI GREEN ENERGY TECH CO LTD
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Patent Information
- Application Number
- CN202510414728.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-06-11
- Publication Date
- 2025-07-04
AI Technical Summary
Technical Problem
In existing solar cells, the coordination between different factors is not appropriate enough, resulting in poor performance.
Method used
In a solar cell, N-type and P-type doped layers are provided, and the spacing between adjacent N-type collecting gate lines is controlled below 1.391 mm. Combined with the appropriate doping concentration and square resistance range, the distribution of N-type and P-type doped layers is optimized to achieve the balance of parasitic absorption, metal region composite current and lateral resistance.
Benefits of technology
The photoelectric conversion efficiency of solar cells is improved, ensuring that the performance reaches a better state, and the efficiency is improved to 26% or above.
✦ Generated by Eureka AI based on patent content.
Abstract
The invention provides a solar cell and a photovoltaic module, and relates to the technical field of photovoltaics. The solar cell includes: a silicon substrate; the silicon substrate comprises a light facing surface and a backlight surface which are opposite; the N-type doped layer is located on the back of the silicon substrate; the N-type collector grid lines are distributed in parallel at intervals and located on the side, away from the silicon substrate, of the N-type doping layer; the distance between every two adjacent N-type collector grid lines is smaller than 1.391 mm. In the invention, the distance between the adjacent N-type collector grid lines is smaller than 1.391 mm, so that factors such as parasitic absorption, recombination current of a metal region, transverse resistance and the like can reach better balance, the performance of the solar cell is better, and the photoelectric conversion efficiency is higher.
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