Conversion structure from waveguide to single-layer substrate integrated waveguide structure and electronic equipment

Abstract

The invention relates to the field of conversion structures, in particular to a conversion structure from a waveguide to a single-layer substrate integrated waveguide structure and electronic equipment. Comprising a first connecting structure from a waveguide to a conversion structure and a second connecting structure from the conversion structure to a single-layer substrate integrated waveguide structure; the first connecting structure comprises a wedge-shaped structure and a first dielectric substrate connected with the wedge-shaped structure, the wedge-shaped structure comprises a pair of symmetrical wedges, the widths of the wedges are gradually reduced from the near end to the far end, the wedge-shaped structure is composed of multiple layers of substrates arranged from top to bottom, and the wedge-shaped structure is provided with non-metallized holes; through the design of the first connection structure and the second connection structure, the first connection structure is a combination of a wedge-shaped structure and a non-metallized hole, and the second connection structure is a combination of a step-shaped dielectric substrate and a semi-metal hole, the control of impedance matching is realized, the antenna also has the characteristics of easy integration and easy assembly, the assembly process is simple, and the cost is low. Electromagnetic wave leakage can be effectively avoided, and the radiation efficiency and gain stability of the antenna are improved.

Description

Technical Field

[0001] The present invention relates to the field of conversion structures, and particularly to a conversion structure from a waveguide to a single-layer substrate integrated waveguide structure and an electronic device. Background Art

[0002] Currently, vehicle-mounted millimeter-wave radars with high-precision and long-distance detection capabilities play an important role. Such vehicle-mounted millimeter-wave radars usually operate in the frequency band range of 76 GHz to 81 GHz. However, vehicle-mounted millimeter-wave radars face challenges in actual applications. The antenna size for vehicle-mounted millimeter-wave radars is small, and small-sized antennas are difficult to design and manufacture, with high requirements for process accuracy. Moreover, processing errors have a relatively large impact on the performance of vehicle-mounted millimeter-wave radars, which can lead to problems such as distortion of the antenna radiation pattern and a decrease in gain, thereby affecting the detection accuracy of the radar.

[0003] Generally, it is difficult for traditional conversion structures to evaluate the performance of antennas applied to automotive radars. The conversion structure is one of the important components of antennas or feeds, and its performance is directly related to whether the antenna can operate stably. The conversion structure can be mainly divided into a vertical conversion structure and a parallel conversion structure.

[0004] In order to achieve electromagnetic energy transmission, the various parts of the vertical conversion structure need to be closely fitted. If there are gaps or the fitting is not tight between the various parts, it may lead to leakage of electromagnetic energy. The leakage will not only reduce the radiation efficiency of the antenna, shortening the detection distance of the radar, but may also cause signal interference, affecting the normal operation of the radar system.

[0005] The design process of the parallel conversion structure is relatively complex. The parallel conversion structure involves complex electromagnetic field distributions and signal transmission path designs, and the mutual influence of various factors needs to be considered, increasing the design difficulty and cycle. In addition, due to its complex structure and design principle, the parallel conversion structure is not suitable for the measurement of related devices such as automotive radar antennas. Summary of the Invention

[0006] Aiming at the problems mentioned in the prior art, the present invention proposes a conversion structure from a waveguide to a single-layer substrate integrated waveguide structure and an electronic device. The conversion structure has a simple design process, good performance, and can accurately evaluate the performance of related microwave devices such as automotive radar antennas.

[0007] To achieve the above object, the present invention adopts the following technical solutions: In a first aspect, the present invention proposes a conversion structure from a waveguide to a single-layer substrate integrated waveguide structure, including a first connection structure and a second connection structure connected to each other; including a first connection structure and a second connection structure connected to each other; The first connection structure includes a connected wedge structure and a first dielectric substrate. The wedge structure includes a pair of symmetric wedge structure bodies whose width gradually narrows from the proximal end to the distal end. The wedge structure bodies are composed of multiple layers of substrates arranged in sequence from top to bottom, and non-metallized holes are provided on each layer of substrate. The second connection structure includes a second dielectric substrate. Half-metal holes are provided on both the first dielectric substrate and the second dielectric substrate. The second dielectric substrate has a stepped structure that gradually decreases along the first direction. The first direction is the direction from the end of the second connection structure close to the first connection structure to the end of the second connection structure far from the first connection structure.

[0008] As a further improvement of the present invention, the proximal end of the wedge structure is connected to the first dielectric substrate, and the distal end is connected to the waveguide. The number of substrate layers of the wedge structure is equal to the number of layers of the first dielectric substrate.

[0009] As a further improvement of the present invention, the non-metallized holes are uniformly arranged along the length direction of the wedge structure (11), and the distance between adjacent non-metallized holes is 0.6 mm.

[0010] As a further improvement of the present invention, the non-metallized holes are divided into multiple groups, and the aperture of each group of non-metallized holes gradually decreases in the direction from the proximal end to the distal end of the wedge structure body with a difference of 0.1 mm.

[0011] As a further improvement of the present invention, the top layer and the bottom layer of the first dielectric substrate and the second dielectric substrate are both metal layers.

[0012] As a further improvement of the present invention, both the upper and lower sides of the second dielectric substrate have symmetric stepped structures.

[0013] As a further improvement of the present invention, the thickness of the stepped structure decreases successively with a difference of 0.127 mm.

[0014] As a further improvement of the present invention, the half-metal holes are arranged in two columns and do not penetrate through. The distance between adjacent half-metal holes is the same.

[0015] As a further improvement of the present invention, the second dielectric substrate adjusts the impedance matching by adjusting the middle distance between the two columns of half-metal holes.

[0016] In a second aspect, the present invention provides an electronic device, including a conversion structure from a waveguide to a single-layer substrate integrated waveguide structure as described above.

[0017] The present invention has achieved the following technical effects compared with the prior art: The conversion structure of the present invention adopts the design of the first connection structure and the second connection structure, where the first connection structure is a combination of a wedge-shaped structure and a non-metallized hole, and the second connection structure is a combination of a stepped dielectric substrate and a semi-metallic hole, achieving the control of impedance matching. Compared with the traditional vertical conversion structure, the present invention has the characteristics of easy integration and easy assembly. Not only is the assembly process simple, but also electromagnetic wave leakage can be effectively avoided, thereby improving the radiation efficiency and gain stability of the antenna; the impedance matching is adjusted by adjusting the distance between the semi-metallic holes, and the adjustment method is simple and convenient, simplifying the adjustment process of impedance matching. In addition, the conversion structure can adapt to the size characteristics of the single-layer substrate integrated waveguide, solving the problem of signal loss caused by the complex path design of the traditional parallel conversion structure, and providing a highly reliable test basis for the performance evaluation of vehicle-mounted millimeter-wave radar antennas. Brief Description of the Drawings

[0018] Figure 1 It is a schematic diagram of the overall structure of the present invention; Figure 2 It is a schematic diagram of the first connection structure of the present invention; Figure 3 It is a schematic diagram of the second connection structure of the present invention; Figure 4 It is a schematic diagram of the dimensions of the first connection structure of the present invention; Figure 5 It is a schematic diagram of the dimensions of the second connection structure of the present invention; Figure 6 It is a simulation schematic diagram of the conversion structure of the present invention.

[0019] Reference Signs: 1. First connection structure; 11. Wedge-shaped structure; 12. First dielectric substrate; 2. Second connection structure; 21. Second dielectric substrate. Detailed Description of the Invention

[0020] In the following text, only some exemplary embodiments are simply described. As those skilled in the art can recognize, the described embodiments can be modified in various different ways without departing from the spirit or scope of the present invention. Therefore, the drawings and the description are considered to be exemplary in nature rather than restrictive.

[0021] In the description of the present invention, it should be understood that the orientation or positional relationship indicated by the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. is based on the orientation or positional relationship shown in the drawings. It is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, it should not be construed as a limitation to the present invention.

[0022] In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the present invention, the meaning of "a plurality" is two or more, unless otherwise specifically defined.

[0023] In the present invention, unless otherwise clearly specified and defined, the terms such as "mounted", "connected", "coupled", "fixed", etc. should be understood in a broad sense. For example, it may be a fixed connection, a detachable connection, or integrated; it may be a mechanical connection, an electrical connection, or a communication connection; it may be directly connected, or indirectly connected through an intermediate medium, and it may be the internal communication of two elements or the interaction relationship between two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0024] In the present invention, unless otherwise clearly specified and defined, the first feature being "on" or "under" the second feature may include the direct contact between the first and second features, or may include the situation where the first and second features are not in direct contact but in contact through other features therebetween. Moreover, the first feature being "above", "over" and "on top of" the second feature includes that the first feature is directly above and obliquely above the second feature, or simply means that the horizontal height of the first feature is higher than that of the second feature. The first feature being "under", "beneath" and "underneath" the second feature includes that the first feature is directly below and obliquely below the second feature, or simply means that the horizontal height of the first feature is lower than that of the second feature.

[0025] It should be understood that when used in this specification and the appended claims, the terms "comprises" and "comprising" indicate the presence of the described features, wholes, steps, operations, elements and / or components, but do not preclude the presence or addition of one or more other features, wholes, steps, operations, elements, components and / or their combinations.

[0026] It should also be understood that the terms used in the specification of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention. As used in the specification of the present invention and the appended claims, unless the context clearly indicates otherwise, the singular forms "a", "an" and "the" are intended to include the plural forms.

[0027] It should be further understood that the term "and / or" used in the specification of the present invention and the appended claims refers to any combination and all possible combinations of one or more of the associated listed items, and includes these combinations.

[0028] Schematic diagrams of various structures according to the disclosed embodiments of the present invention are shown in the drawings. These figures are not drawn to scale, where for the purpose of clear illustration, some details are enlarged and some details may be omitted. The shapes of various regions and layers shown in the figures and their relative sizes and positional relationships are only exemplary, and may actually deviate due to manufacturing tolerances or technical limitations, and those skilled in the art can design regions / layers with different shapes, sizes and relative positions according to actual needs.

[0029] Embodiments of the present invention will be described in detail below with reference to the drawings.

[0030] As Figure 1 shown is a conversion structure of a waveguide to a single-layer substrate integrated waveguide structure of the present invention. The conversion structure includes a first connection structure 1 and a second connection structure 2 connected to each other.

[0031] The first connection structure 1 includes a wedge-shaped structure 11 and a first dielectric substrate 12 connected to each other. The wedge-shaped structure 11 is a pair of symmetric wedge-shaped structure bodies whose width gradually narrows from the proximal end to the distal end. The wedge-shaped structure body is composed of multiple layers of substrates arranged in sequence from top to bottom, and non-metallized holes are provided on each layer of the substrate.

[0032] The second connection structure 2 includes a second dielectric substrate 21. Half-metal holes are provided on both the first dielectric substrate 12 and the second dielectric substrate 21. The second dielectric substrate 21 has a stepped structure that gradually decreases along a first direction, and the first direction is from the end of the second connection structure 2 close to the first connection structure 1 to the end of the second connection structure 2 far from the first connection structure 1.

[0033] As shown in the Figure 1 and Figure 2 embodiment, the first dielectric substrate 12 in the first connection structure 1 of the present invention is connected to the second connection structure 2, the second connection structure 2 is connected to the single-layer substrate integrated waveguide structure, and the wedge-shaped structure 11 in the first connection structure 1 is connected to the interface on the waveguide, thereby realizing the transmission of the waveguide.

[0034] As Figure 2 shown, the first connection structure 1 in the embodiment includes a wedge structure 11 and a first dielectric substrate 12. The wedge structure 11 and the first dielectric substrate 12 are attached to each other. Figure 2 Specifically, as shown in, the proximal end (wide side) of the wedge structure 11 is connected to the first dielectric substrate 12, and the distal end (narrow side) of the wedge structure 11 is connected to the waveguide.

[0035] The wedge structure 11 in this embodiment can improve the impedance matching between the waveguide and the conversion structure of this device, so that electromagnetic energy can be transferred from the waveguide to the conversion structure of this device more efficiently.

[0036] In the embodiment, the wedge structure 11 is preferably formed by stacking 5 substrate layers in sequence. Each substrate layer is provided with non-metallized holes, and the positions of the non-metallized holes on each layer correspond to each other; as Figure 4 shown, the non-metallized holes are arranged in sequence along the length direction of the wedge structure 11. The distance between adjacent non-metallized holes is preferably set to 0.6 mm. In the embodiment, the non-metallized holes are preferably provided with 6. Two non-metallized holes are divided into a group, so three groups of non-metallized holes are obtained.

[0037] It should be noted that the aperture diameter of each group of non-metallized holes decreases in sequence from the proximal end to the distal end of the wedge structure 11. The purpose is that the gradual change of the aperture diameter will cause differences in the resonance frequencies at different positions, forming multiple adjacent resonance points, which can effectively improve the antenna bandwidth.

[0038] In the implementation, the aperture diameters of adjacent groups of non-metallized holes preferably decrease in sequence with a difference of 0.1 mm. It should be noted that the length of the wedge structure 11 in the embodiment is determined according to the impedance matching between the waveguide and the conversion structure of this device.

[0039] As Figure 4 shown are the dimensions of the wedge structure 11 in this embodiment. The specific dimensions in the figure include L6 = 6 mm, L2 = 1.2 mm, L3 = 0.1 mm, L4 = 0.4 mm, L5 = 0.6 mm, d1 = 0.4 mm, d2 = 0.3 mm, d3 = 0.2 mm.

[0040] In the embodiment, L6 is the length of the wedge structure body, L5 is the distance from the center of the non-metallized hole to the edge of the wedge structure body, L4 is the distance from the first non-metallized hole near the proximal end to the proximal edge of the wedge structure body, L3 is the distance from the intersection of the proximal ends of two wedge structure bodies to the top of the wedge structure body, L2 is the width of the wedge structure body, d1 is the aperture diameter of the first group of non-metallized holes, d2 is the aperture diameter of the second group of non-metallized holes, and d3 is the aperture diameter of the third group of non-metallized holes.

[0041] In the embodiment, the first dielectric substrate 12 is connected to the wedge-shaped structure 11. The number of layers of the first dielectric substrate 12 is equal to that of the wedge-shaped structure 11, which can effectively avoid the leakage of electromagnetic waves.

[0042] In the embodiment, since the wedge-shaped structure 11 has 5 layers, the first dielectric substrate 12 is preferably composed of 5 dielectric plates arranged in sequence from top to bottom. The thickness of each dielectric plate is 0.254 mm, and the dielectric plate material is Rogers 5880. Two columns of semi-metal holes are provided on each dielectric plate. The semi-metal holes are arranged in sequence along the length direction of the dielectric plate, extending from one end of the dielectric plate edge to the other end edge. The distance between adjacent semi-metal holes is the same, the aperture of each semi-metal hole is the same, and the distance between columns is the same. In the embodiment, the semi-metal holes do not penetrate through. Preferably, the depth of the semi-metal hole is 0.127 mm. Metal layers are provided on both the top and bottom of the first dielectric substrate 12, which can effectively suppress the edge radiation and external interference of electromagnetic waves during transmission.

[0043] As Figure 4 shown is the size of the first dielectric substrate 12 in this embodiment. The specific dimensions in the figure include a = 2.2 mm, s = 0.6 mm, d = 0.4 mm, where a represents the distance between two columns of semi-metal holes, s represents the distance between adjacent semi-metal holes, and d represents the aperture of the semi-metal hole.

[0044] As Figure 3 shown, in the embodiment, the second dielectric substrate 21 is in a stepped shape. Both the top and bottom of the second dielectric substrate 21 are in a stepped shape. The purpose of this setting is that the stepped structure can improve the transmission performance and avoid the leakage of electromagnetic waves.

[0045] As Figure 3 shown, in the embodiment, the height of the stepped shape of the second dielectric substrate 21 gradually decreases from left to right. The second dielectric substrate 21 in the figure is divided into 5 groups according to the stepped shape for description. The rightmost is the first group, and the leftmost is the fifth group: The first group is composed of one dielectric plate with a thickness of 0.254 mm, and the dielectric plate material is Rogers 5880; the second group is composed of a dielectric plate with a thickness of 0.254 mm plus two dielectric plates with a thickness of 0.127 mm on the upper and lower sides; the third group is composed of three dielectric plates, each with a thickness of 0.254 mm; the fourth group is composed of three dielectric plates with a thickness of 0.254 mm plus two dielectric plates with a thickness of 0.127 mm on the upper and lower sides respectively; the fifth group is composed of five dielectric plates, each with a thickness of 0.254 mm. Therefore, in this embodiment, the stepped shape on the upper side of the second dielectric substrate 21 and the stepped shape on the lower side of the second dielectric substrate 21 are both used for transition with a difference of 0.127 mm.

[0046] In the embodiment, as Figure 5As shown, the second dielectric substrate 21 controls the impedance matching of the conversion structure by adjusting the distance between two columns of half-metal holes. Each dielectric layer of the second dielectric substrate 21 is provided with two columns of half-metal holes. Similarly, the second dielectric substrate 21 is divided into 5 groups for description. The rightmost is the first group, and the leftmost is the fifth group.

[0047] As Figure 5 shown, in the figure, the distances between the two columns of half-metal holes in the first group, the third group, and the fifth group are different. Specifically, the distances at the middle positions between the two columns of half-metal holes are different, and the distances on the left and right sides of the two columns of half-metal holes are the same. In the figure, IM1, IM2, and IM3 represent the different distances at the middle positions between the two columns of half-metal holes. In the embodiment, there are 10 metal holes in each column. When impedance matching needs to be adjusted, only the distance between the 5th half-metal hole and the 6th half-metal hole in the two columns of half-metal holes needs to be adjusted. The middle position is determined according to the number of half-metal holes in each column, and the impedance matching adjustment is achieved by adjusting the distance at the middle position between the two columns of half-metal holes.

[0048] As Figure 5 shown, the structural parameters of the second dielectric substrate 21 in the embodiment are: a = 2.2 mm, s = 0.6 mm, s1 = 0.55 mm, IM1 = 2 mm, IM2 = 2.4 mm, IM3 = 2 mm. Where a represents the distance between the two columns of half-metal holes, s represents the distance between adjacent half-metal holes, d represents the aperture of the half-metal hole, IM1 represents the distance at the middle position between the two columns of half-metal holes on the second dielectric substrate 21 in the first group, IM2 represents the distance at the middle position between the two columns of half-metal holes on the second dielectric substrate 21 in the third group, and IM3 represents the distance at the middle position between the two columns of half-metal holes on the second dielectric substrate 21 in the fifth group.

[0049] For the specific use of this device, when this device is installed between the waveguide and the single-layer substrate integrated waveguide structure, the electromagnetic energy from the waveguide can be transmitted to the single-layer substrate integrated waveguide structure through this device, and the impedance matching is adjusted by adjusting the wedge structure 11 and the second dielectric substrate 21 by adjusting the distance between the two columns of half-metal holes.

[0050] The technical effects of the present invention will be described below in combination with simulation experiments.

[0051] 1. Simulation conditions and content: The simulation software uses HFSS19.0, and the simulation solution working frequency point is set to 77 GHz. The reflection coefficient and insertion loss of the present invention are simulated, and the results are as Figure 6 shown.

[0052] 2. Analysis of simulation results: Refer to Figure 6, within the frequency band range of 76 GHz to 81 GHz, the S11 (reflection coefficient) of the conversion structure of this device is lower than 10 dB, while the S21 (insertion loss) is approximately 0.95 dB, less than 1 dB. Therefore, it shows that the conversion structure designed by the present invention has good transmission performance.

[0053] It shows that the conversion structure from waveguide to single-layer substrate integrated waveguide involved in the present invention has good performance, which enables it to meet the performance measurement requirements of related microwave devices such as automotive radar antennas.

[0054] The above shows and describes the basic principles, main features and advantages of the present invention. For those skilled in the art, it is obvious that the present invention is not limited to the details of the above exemplary embodiments, and can be implemented in other specific forms without departing from the spirit or basic features of the present invention. Therefore, from any point of view, the embodiments should be regarded as exemplary and non-restrictive. The scope of the present invention is defined by the appended claims rather than the above description. Therefore, all changes falling within the meaning and scope of the equivalent elements of the claims are intended to be included in the present invention. Any reference signs in the claims should not be regarded as limiting the claimed invention.

[0055] In addition, it should be understood that although this specification is described according to embodiments, not every embodiment only contains an independent technical solution. This narrative way of the specification is only for clarity. Those skilled in the art should regard the specification as a whole, and the technical solutions in each embodiment can also be appropriately combined to form other embodiments that can be understood by those skilled in the art. The above content is only to illustrate the technical idea of the present invention, and the protection scope of the present invention cannot be limited thereby. Any modification made on the basis of the technical solution according to the technical idea proposed by the present invention falls within the protection scope of the claims of the present invention.

Claims

1. A conversion structure from a waveguide to a single-layer substrate integrated waveguide structure, characterized in that Comprising a connected first connection structure (1) and second connection structure (2); The first connection structure (1) comprises a connected wedge structure (11) and a first dielectric substrate (12), the wedge structure (11) comprising a pair of symmetric wedge structure bodies whose width gradually narrows from the proximal end to the distal end, the wedge structure bodies being composed of multiple layers of substrates arranged in sequence from top to bottom, and non-metallized holes being provided on each layer of substrate; The second connection structure (2) comprises a second dielectric substrate (21), semi-metallic holes being provided on both the first dielectric substrate (12) and the second dielectric substrate (21), wherein the second dielectric substrate (21) has a stepped structure that gradually decreases along a first direction, and the first direction is the direction from the end of the second connection structure (2) close to the first connection structure (1) to the end of the second connection structure (2) far from the first connection structure (1).

2. The conversion structure from a waveguide to a single-layer substrate integrated waveguide structure according to claim 1, characterized in that, The proximal end of the wedge structure (11) is connected to the first dielectric substrate (12), and the distal end is connected to a waveguide; The number of substrate layers of the wedge structure (11) is equal to the number of layers of the first dielectric substrate (12).

3. The conversion structure from waveguide to single-layer substrate integrated waveguide structure according to claim 1, characterized in that, The non-metallized holes are arranged uniformly along the length direction of the wedge structure (11), and the distance between adjacent non-metallized holes is 0.6 mm.

4. The conversion structure from a waveguide to a single-layer substrate integrated waveguide structure according to claim 3, characterized in that, The non-metallized holes are divided into multiple groups, and the aperture of each group of non-metallized holes decreases successively with a difference of 0.1 mm in the direction from the proximal end to the distal end of the wedge structure (11) body.

5. The conversion structure from a waveguide to a single-layer substrate integrated waveguide structure according to claim 1, characterized in that, The top and bottom layers of the first dielectric substrate (12) and the second dielectric substrate (21) are metal layers.

6. The conversion structure from a waveguide to a single-layer substrate integrated waveguide structure according to claim 1, characterized in that, Both the upper and lower sides of the second dielectric substrate (21) have symmetric stepped structures.

7. The conversion structure from a waveguide to a single-layer substrate integrated waveguide structure according to claim 6, characterized in that, The thickness of the stepped structure decreases successively with a difference of 0.127 mm.

8. The conversion structure from waveguide to single-layer substrate integrated waveguide structure according to claim 1, characterized in that, The semi-metallic holes are arranged in two columns and are not penetrated; The distance between adjacent semi-metallic holes is the same.

9. The conversion structure from a waveguide to a single-layer substrate integrated waveguide structure according to claim 8, characterized in that, The second dielectric substrate (21) adjusts impedance matching by adjusting the intermediate distance between the two columns of semi-metallic holes.

10. An electronic device, characterized in that, Comprising a conversion structure of a waveguide to a single-layer substrate integrated waveguide structure according to any one of claims 1 to 9.

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