Etching method, etching device and solar cell module

Abstract

The embodiment of the invention discloses an etching method, an etching device and a solar cell module. The etching method comprises the following steps: controlling a light spot overlapping rate to be smaller than a preset overlapping rate; generating laser with preset performance parameters; shaping the laser into rectangular flat-topped light; and focusing the rectangular flat-topped light into a light spot with a preset size, and etching the perovskite functional layer in the to-be-etched cell according to the light spot overlapping rate. According to the technical scheme provided by the embodiment of the invention, the etching method is set, the perovskite functional layer is etched by adopting point contact, the laser beam adopts rectangular flat-topped light, each pulse independently acts on the film layer, single-pulse etching is performed on the perovskite functional layer in the to-be-etched cell, heat accumulation in an optical pulse overlapping region is avoided, and electrode deposition is more facilitated.

Description

Technical Field

[0001] The present invention relates to the technical field of solar cells, and particularly to an etching method, an etching device and a solar cell module. Background Art

[0002] To produce a perovskite solar cell module, three parallel laser scribing processes are required to divide the whole cell into several series-connected sub-cells, and a final laser edge cleaning process is also needed to remove the conductive deposition film at the cell edge. The first process P1: Before depositing the transport layer, use a laser to scribe the transparent conductive bottom electrode on the glass substrate to make it into independent regions; the second process P2: Perform laser scribing on the perovskite light-absorbing layer on the transparent conductive bottom electrode so that the transparent conductive bottom electrode is exposed without damage; the third process P3: After completing the top electrode fabrication, use a laser to scribe all the electrode layer, transport layer and perovskite light-absorbing layer above the transparent conductive bottom electrode to form an independent structure between the sub-cells and connected in series through the upper and lower electrode layers. Among them, different types of lasers can be used for etching in the second process P2, and solid or gas lasers with different pulse widths and wavelengths can be applied, and the groove morphologies formed by etching are also different; optimizing the second process P2 can reduce the additional series resistance introduced by etching in the second process P2 and improve the fill factor of large-area modules.

[0003] In the prior art, the etching method in the second process P2 uses a 400-600 nm solid laser, and the pulse width can be nanosecond, picosecond or femtosecond; by setting appropriate repetition frequencies (the number of pulses triggered per unit time), line speeds and single-pulse energies, and etching the perovskite functional layer through Gaussian beam superposition, an etched groove with a high pulse overlap rate can be achieved; ensuring the cleanliness inside the etched groove, etching away all functional layers above the transparent conductive bottom electrode, completely retaining the surface morphology of the bottom electrode, ensuring the interconnection between the deposited top electrode and the bottom electrode in the groove, and forming a series connection channel between the sub-cells; the contact area between the bottom electrode and the top electrode through the groove formed by etching in the second process P2 should meet the transmission of the photo-generated current inside the module, ensure no additional series resistance is added, and prevent the loss of effective current, affecting the performance of the module.

[0004] However, in the prior art, a laser with nanosecond, picosecond or femtosecond is used to generate a Gaussian beam for etching. The energy density at the beam center of the Gaussian beam is significantly higher than that at the edge. The groove formed by etching with the Gaussian beam has a certain taper. The greater the thickness of the film layer to be etched, the more obvious the taper. Without damaging the bottom electrode in the central area of the groove, there may be certain residues at the edge position of the groove due to insufficient power density, resulting in the inability to form an effective ohmic contact. In addition, to ensure the smoothness of the groove edge, a relatively high pulse overlap rate is adopted, and a high pulse overlap rate means heat accumulation, which will cause the formation of a molten, re-solidified area and micron-sized craters at the groove edge, thereby affecting the uniformity of the subsequent preparation of the top electrode, causing local shunting, and increasing the additional series resistance. Summary of the Invention

[0005] The present invention provides an etching method, an etching device and a solar cell module to solve the problem that heat accumulates in the light pulse overlap area, thereby affecting the subsequent preparation of electrodes and increasing the additional series resistance.

[0006] According to one aspect of the present invention, an etching method is provided. The etching method includes the steps of:

[0007] Controlling the spot overlap rate to be less than a preset overlap rate;

[0008] Generating a laser with preset performance parameters;

[0009] Shaping the laser into a rectangular flat-top light;

[0010] Focusing the rectangular flat-top light into a spot with a preset size, and etching the perovskite functional layer in the battery to be etched according to the spot overlap rate.

[0011] Optionally, after focusing the rectangular flat-top light into a spot with a preset size and etching the perovskite functional layer in the battery to be etched according to the spot overlap rate, it includes:

[0012] Forming grooves with a preset interval in the perovskite functional layer.

[0013] Optionally, the control module controls the spot overlap rate to be less than a preset overlap rate, including:

[0014] Determining the minimum electrode contact area according to the minimum electrode width and the length of a single sub-cell;

[0015] Determining the number of pulses required for the length of a single sub-cell according to the minimum electrode contact area;

[0016] Adjusting the spot repetition frequency and the line speed so that the number of pulses is less than a preset number of pulses;

[0017] Determine the spot overlap rate according to the spot repetition frequency and the linear velocity that make the number of pulses less than the preset number of pulses.

[0018] Optionally, the battery to be etched includes a bottom electrode and a perovskite functional layer stacked in sequence; determining the number of pulses required for the length of a single sub-battery according to the minimum electrode contact area includes:

[0019] Determine the width of the bottom electrode exposed after the spot acts on the perovskite functional layer;

[0020] Determine the number of pulses required for the length of a single sub-battery according to the ratio of the minimum electrode contact area to the square of the width of the exposed bottom electrode.

[0021] Optionally, after generating the laser with preset performance parameters, it further includes:

[0022] Correct and filter the laser.

[0023] Optionally, the perovskite functional layer includes a first transport layer, a first passivation and modification layer, a perovskite absorption layer, a second transport layer, and a second passivation and modification layer stacked in sequence; or, the perovskite functional layer includes a first transport layer, a perovskite absorption layer, and a second transport layer stacked.

[0024] Optionally, the etched groove is the second groove of the perovskite component; the perovskite component is provided with a plurality of first grooves, a plurality of second grooves, and a plurality of third grooves along a first direction; the second groove includes a plurality of sub-grooves with preset intervals.

[0025] According to another aspect of the present invention, there is provided an etching device for performing the above etching method, and the etching device includes:

[0026] A control module for controlling the spot overlap rate to be less than a preset overlap rate;

[0027] A laser generation module for generating a laser with preset performance parameters;

[0028] A shaping module for shaping the laser into a rectangular flat-top light;

[0029] A focusing module for focusing the rectangular flat-top light into a spot with a preset size and etching the perovskite functional layer in the battery to be etched according to the spot overlap rate.

[0030] Optionally, the control module includes:

[0031] A minimum electrode contact area determination unit for determining the minimum electrode contact area according to the minimum electrode width and the length of a single sub-battery;

[0032] A pulse number determining unit, configured to determine the number of pulses required for the length of a single sub-cell according to the minimum electrode contact area;

[0033] An adjustment unit, configured to adjust the spot repetition frequency and the line speed so that the number of pulses is less than a preset number of pulses;

[0034] A spot overlap rate determining unit, configured to determine the spot overlap rate according to the spot repetition frequency and the line speed that make the number of pulses less than the preset number of pulses.

[0035] Optionally, the etching device further includes: an optical path correction module; the optical path correction module is located between the laser generation module and the shaping module;

[0036] The optical path correction module is configured to correct and filter the laser.

[0037] Optionally, the optical path correction module includes a beam expander and a diaphragm; the beam expander is located between the laser generation module and the diaphragm; the diaphragm is located between the beam expander and the shaping module;

[0038] The beam expander is configured to correct the laser with a divergence angle generated by the laser generation module;

[0039] The diaphragm is configured to filter the corrected laser and transmit it to the shaping module.

[0040] Optionally, the shaping module includes a shaping unit and a spot analysis unit; the shaping unit is located between the diaphragm and the focusing module;

[0041] The shaping unit is configured to shape the laser into a rectangular flat-top light;

[0042] The spot analysis unit is configured to detect the spot shape and energy density distribution of the rectangular flat-top light.

[0043] Optionally, the focusing module includes a reflection unit and a focusing unit;

[0044] The reflection unit is configured to introduce the rectangular flat-top light into the focusing unit;

[0045] The focusing unit is configured to focus the rectangular flat-top light into a spot with a preset size.

[0046] Optionally, the battery to be etched is provided with a plurality of first grooves along a first direction;

[0047] The etching device further includes: a vision positioning module; the vision positioning module is connected to the control module; the vision positioning module is configured to determine the positioning reference line of the first groove and transmit it to the control module;

[0048] The control module is configured to set a compensation amount according to the positioning reference line to control the spacing from the first groove.

[0049] Optionally, the etching device further includes: a dust suction module;

[0050] The dust suction module is used to suck the decomposed particle generated during the etching process.

[0051] According to another aspect of the present invention, a solar cell module is provided, which is formed by applying the above etching method; the solar cell module includes a plurality of battery units; the battery unit includes a bottom electrode layer, a perovskite functional layer, and a top electrode layer that are sequentially stacked;

[0052] The solar cell module is provided with a plurality of first grooves, a plurality of second grooves, and a plurality of third grooves along a first direction; the solar cell module is divided into a plurality of battery units that are sequentially connected in series through the plurality of first grooves, the plurality of second grooves, and the plurality of third grooves;

[0053] The first groove penetrates the bottom electrode layer; the second groove includes a plurality of sub-grooves, and the plurality of sub-grooves are arranged at a preset interval along a second direction; the sub-groove penetrates the perovskite functional layer; the third groove penetrates the top electrode layer and the perovskite functional layer.

[0054] The technical solution of the embodiment of the present invention sets an etching method, uses point contact to etch the perovskite functional layer, the laser beam uses a rectangular flat-top light, each pulse acts independently on the film layer, and there is a certain interval between pulses. By determining the size of the wire groove formed by a single pulse and the interval between adjacent pulses, it is ensured that the top electrode has sufficient contact area with the bottom electrode through the etched wire groove; applying a high-quality flat-top light spot, which has the characteristics of high uniformity, high light efficiency, and steep edges, the formed wire groove is discontinuous, and there is a certain interval between the wire grooves formed by each pulse; using the rectangular flat-top light beam to act on the surface of the film layer, the effect of the edge and the middle area of the formed wire groove is the same. When the single-pulse energy reaches the ablation threshold of the perovskite functional layer, a rectangular wire groove with steep edges can be formed, and the bottom electrode can be completely exposed. Applying the etching method of point contact etching the wire groove in the embodiment of the present invention, there is a certain interval between adjacent pulses, and the perovskite functional layer is reserved at the interval, which is more conducive to heat conduction, avoids heat accumulation, and reduces the melting bulge at the edge. In addition, compared with the complete wire groove, applying the etching method of point contact etching the wire groove has the advantage of no pulse overlap, and a higher processing line speed can be matched at a fixed repetition frequency, improving the processing efficiency of the solar cell module. Moreover, since there is no interaction between pulses, optimizing the process only needs to focus on the single-pulse energy and the spot shape of the beam, reducing the debugging difficulty. In addition, on the premise of ensuring the effective contact area between the top electrode and the bottom electrode and not increasing the additional series resistance, the size of the wire groove formed by a single pulse and the interval between adjacent pulses can be determined.

[0055] It should be understood that the content described in this section is not intended to identify the key or important features of the embodiments of the present invention, nor is it used to limit the scope of the present invention. Other features of the present invention will become readily apparent from the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0056] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0057] Figure 1 is a flowchart of an etching method provided according to an embodiment of the present invention;

[0058] Figure 2 is a flowchart of another etching method provided according to an embodiment of the present invention;

[0059] Figure 3 is a schematic diagram showing the change of the fill factor corresponding to different groove widths provided according to an embodiment of the present invention;

[0060] Figure 4 is a schematic diagram showing the change of the photoelectric conversion efficiency corresponding to different groove widths provided according to an embodiment of the present invention;

[0061] Figure 5 is a schematic diagram of a special-shaped structure formed by discontinuous etching in the second process provided according to an embodiment of the present invention;

[0062] Figure 6 is a schematic diagram of another special-shaped structure formed by discontinuous etching in the second process provided according to an embodiment of the present invention;

[0063] Figure 7 is provided according to an embodiment of the present invention Figure 5 a scanning electron microscope (SEM) image of P3 in the structure shown;

[0064] Figure 8 is provided according to an embodiment of the present invention Figure 5 a scanning electron microscope (SEM) image of P2 in the structure shown;

[0065] Figure 9 is a schematic structural diagram of an etching device provided according to an embodiment of the present invention;

[0066] Figure 10 is a schematic structural diagram of the control module in the etching device provided according to an embodiment of the present invention;

[0067] Figure 11It is a schematic structural diagram of another etching device provided according to an embodiment of the present invention;

[0068] Figure 12 It is a schematic structural diagram of a solar cell module provided according to an embodiment of the present invention;

[0069] Figure 13 It is a schematic structural diagram of the solar cell module after completing the second process provided according to an embodiment of the present invention. Detailed implementation manners

[0070] In order to enable those skilled in the art to better understand the solution of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work shall fall within the protection scope of the present invention.

[0071] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and do not necessarily need to describe a specific order or sequence. It should be understood that such data can be interchanged under appropriate circumstances so that the embodiments of the present invention described here can be implemented in an order different from those illustrated or described here. In addition, the terms "comprising" and "having" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product or device comprising a series of steps or units does not necessarily have to be limited to those steps or units clearly listed, but may include other steps or units not clearly listed or inherent to these processes, methods, products or devices.

[0072] Figure 1 It is a flowchart of an etching method provided according to an embodiment of the present invention. This embodiment is applicable to etching the perovskite functional layer in the battery to be etched. This etching method can be executed by an etching device, and the etching device can be implemented in the form of hardware and / or software. As Figure 1 shown, the etching method includes:

[0073] S110. Control the spot overlap rate to be less than a preset overlap rate.

[0074] Specifically, during the process of laser scribing the film layer, a high overlap rate of the light spot forms a complete and smooth-edged wire groove. The light spot overlap rate can be expressed by the following formula: O = 1 - (V / F • D); where O represents the light spot overlap rate; V represents the processing linear velocity, with the unit of mm / s; F represents the repetition frequency used, with the unit of KHz; D represents the focused light spot diameter, with the unit of μm. When using circular Gaussian lithography conventionally, the light spot overlap rate O needs to be ≥ 0.6 to achieve complete wire groove scribing. However, in the embodiments of the present invention, there needs to be a certain spacing between laser pulses, so it is necessary to control the light spot overlap rate O to be less than zero. The preset overlap rate is the maximum value of the light spot overlap rate that is preset to meet the scribing requirements. Exemplarily, the preset overlap rate is 0. The application control module controls the light spot overlap rate to be less than zero.

[0075] S120. Generate a laser with preset performance parameters.

[0076] Specifically, a laser can be applied to generate the laser. The preset performance parameters are the performance parameters of the laser generated by the laser that are preset in advance. The performance parameters can include the wavelength range, frequency range, pulse width, etc. Exemplarily, in the embodiments of the present invention, a picosecond laser with a wavelength range of 400 - 800 nm can be selected. The frequency range of the laser is 20 - 1000 KHz, the pulse width is less than 10 picoseconds, and the beam quality M 2 ≤ 1.3, the roundness, near-field roundness, and far-field roundness are all required to be ≥ 95%, and the laser power is greater than 30W & 50KHz.

[0077] In an alternative embodiment of the present invention, after S120. Generate a laser with preset performance parameters, it further includes: correcting and filtering the laser.

[0078] Specifically, a combination of a collimating lens and an adjustable magnification beam expander and aperture can be applied to correct and filter the laser. Based on the transformation principle of the lens combination, the collimating lens can perform multiple refractions and transformations on the light beam through the cooperation of lenses with different focal lengths and different types, and can precisely control parameters such as the beam waist radius or divergence angle of the light beam, thereby obtaining a high-quality collimated light beam. Through the above operations, the laser output by the laser with a small divergence angle can be corrected, making the collimation of the laser higher, the divergence angle smaller, and reducing errors. It can also filter out stray light, optimize the light spot pattern, improve the light spot quality after shaping and focusing, and avoid the influence of non-demand energy on the film layer.

[0079] S130. Shape the laser into a rectangular flat-top light.

[0080] Specifically, after correction and filtering, both the beam quality and the spot size of the laser can meet the incident requirements. A shaping lens can be selected to shape the corrected and filtered laser into a rectangular flat-top beam. It is necessary to continuously adjust the angle between the shaping lens and the incident light, and the spot incident on the shaping lens can be shaped from a circular Gaussian beam into a rectangular flat-top beam.

[0081] S140: Focus the rectangular flat-top beam into a spot with a preset size, and etch the perovskite functional layer in the battery to be etched according to the spot overlap rate.

[0082] Specifically, the shaped rectangular flat-top beam is incident on the focusing module. The focusing module focuses the rectangular flat-top beam into a spot with a preset size, and etches the perovskite functional layer in the battery to be etched according to the spot overlap rate.

[0083] In the technical solution of the embodiment of the present invention, an etching method is set. The perovskite functional layer is etched by point contact. The laser beam uses a rectangular flat-top beam. Each pulse acts independently on the film layer, and there is a certain distance between pulses. By determining the groove size formed by a single pulse and the distance between adjacent pulses, it is ensured that the top electrode has sufficient contact area with the bottom electrode through the grooves etched out; the application of a high-quality flat-top spot, which has the characteristics of high uniformity, high light efficiency, and steep edges, the formed grooves are discontinuous, and there is a certain distance between the grooves formed by each pulse; the rectangular flat-top beam acts on the surface of the film layer, and the effect of the edge and the middle area of the formed groove is the same. When the single-pulse energy reaches the ablation threshold of the perovskite functional layer, a rectangular groove with steep edges can be formed, and the bottom electrode can be completely exposed. Using the etching method of the embodiment of the present invention to etch the grooves by point contact, there is a certain distance between adjacent pulses, and the perovskite functional layer is reserved at the distance, which is more conducive to heat conduction, avoids heat accumulation, and reduces the melting bulge at the edge. In addition, compared with the complete groove, using this etching method to etch the grooves by point contact has the advantage of no pulse overlap, and a higher processing line speed can be matched at a fixed repetition frequency, improving the processing efficiency of the solar cell module. Moreover, since there is no interaction between pulses, optimizing the process only needs to focus on the single-pulse energy and the spot shape of the beam, reducing the debugging difficulty. In addition, on the premise of ensuring the effective contact area between the top electrode and the bottom electrode and not increasing the additional series resistance, the groove size formed by a single pulse and the distance between adjacent pulses can be determined.

[0084] In an optional embodiment of the present invention, after focusing the rectangular flat-top beam into a spot with a preset size and etching the perovskite functional layer in the battery to be etched according to the spot overlap rate, it includes: forming grooves with a preset interval in the perovskite functional layer.

[0085] Specifically, by applying point-contact etched grooves with a certain spacing between adjacent pulses, the perovskite functional layer is retained at the spacing, forming grooves with a preset interval. Compared with the complete groove, it is more conducive to heat conduction, avoiding heat accumulation and reducing the melting bulge at the edge.

[0086] Figure 2 FIG. 4 is a flowchart of another etching method provided according to an embodiment of the present invention. This embodiment is a refined description of some technical features of the above embodiment. As Figure 2 shown, the etching method includes:

[0087] S210. Determine the minimum electrode contact area according to the minimum electrode width and the length of a single sub-cell.

[0088] Specifically, the minimum electrode width is represented by Wmin, the length of a single sub-cell is represented by L, and the minimum electrode contact area is represented by Smin. The specific spacing between pulses needs to first simulate the minimum contact area between the bottom electrode and the top electrode that does not affect the performance of the component. First, use the complete continuous groove scribing method to simulate the line width gradient of the groove to be etched. By replacing different specifications of focusing objectives or adjusting the magnification of the beam expander, different sizes of focused spots are achieved. The line width is based on the width W of the completely exposed bottom electrode. Set the length L of a single sub-cell, and set it much lower than the conventional groove width W1. Increase the groove width in a step of 1 micron, which can be respectively expressed as: W1, W2, W3, W4…Wn, Wn+1, Wn+2, Wn+3; then the contact areas S between the bottom electrode and the top electrode of a single sub-cell are respectively L*W1, L*W2, L*W3, L*W4…L*Wn, L*Wn+1, L*Wn+2, L*Wn+3; then for the component performance corresponding to different electrode contact areas, the corresponding open-circuit voltage, short-circuit current, fill factor (FillFactor, FF), and power conversion efficiency (Power Conversion Efficiency, PCE) can be concerned. Figure 3 FIG. 5 is a schematic diagram of the change of the fill factor corresponding to different groove widths provided according to an embodiment of the present invention. Figure 4 FIG. 6 is a schematic diagram of the change of the power conversion efficiency corresponding to different groove widths provided according to an embodiment of the present invention. Referring to Figure 3 and Figure 4 , when the width W of the completely exposed bottom electrode is less than the minimum electrode width Wmin, the component performance parameters such as FF and PCE both show an upward trend as the line width increases; when the width W of the completely exposed bottom electrode is greater than or equal to the minimum electrode width Wmin, the component performance parameters such as FF and PCE tend to be stable and fluctuate within a small range; then the minimum electrode contact area Smin = L*Wmin that does not affect the component performance, thereby determining the minimum electrode contact area.

[0089] S220. Determine the number of pulses required for the length of a single sub - cell according to the minimum electrode contact area.

[0090] In other alternative embodiments of the present invention, the battery to be etched includes a bottom electrode and a perovskite functional layer stacked in sequence; determining the number of pulses required for the length of a single sub - cell according to the minimum electrode contact area includes: determining the width of the bottom electrode exposed after the light spot acts on the perovskite functional layer; determining the number of pulses required for the length of a single sub - cell by taking the ratio of the minimum electrode contact area to the square of the width of the exposed bottom electrode.

[0091] Specifically, according to the width w of the bottom electrode exposed by the rectangular flat - top light spot acting on the perovskite functional layer, the number of pulses N required for the length L of a single sub - cell can be simulated as N = Smin / w².

[0092] S230. Adjust the light - spot repetition frequency and the linear velocity so that the number of pulses is less than the preset number of pulses.

[0093] Specifically, when the overlapping rate of the rectangular flat - top light spot is equal to 0, the wire grooves formed by adjacent pulses are just adjacent but do not overlap. The number of pulses in this case is represented by N1, that is, the preset number of pulses, and N1 = L / w. To control the overlapping rate of the light spot to be less than zero, it is necessary to debug the repetition frequency F and the processing linear velocity V to satisfy N < N1. The expression of the repetition frequency F is: F = N / 1000V*L; where the unit of the repetition frequency F is KHz, N is the number of pulses required for the length L of a single sub - cell, V is the processing linear velocity, and L is the length of a single sub - cell.

[0094] S240. Determine the light - spot overlapping rate according to the light - spot repetition frequency and the linear velocity that make the number of pulses less than the preset number of pulses.

[0095] Specifically, after determining the corresponding processing linear velocity V and the repetition frequency F, the ablation threshold of the perovskite functional layer can be confirmed through the single - pulse energy gradient, and then the optimal single - pulse energy can be matched according to the electron - microscope effect (such as removing the perovskite functional layer to expose the bottom electrode without damaging the bottom electrode and avoiding melting at the edge of the wire groove). In this way, dot - etched wire grooves can be formed. When further depositing and preparing the top electrode, point contacts on the wire grooves can be formed to ensure the overall structure of the wire grooves, avoiding the formation of poor electrode contacts due to uneven external forces on the local area of the wire grooves during the lamination and encapsulation stage, introducing additional series resistance and affecting the performance of the component.

[0096] S250. Generate a laser with preset performance parameters.

[0097] S260. Shape the laser into a rectangular flat - top light.

[0098] S270. Focus the rectangular flat-top light into a spot with a preset size, and etch the perovskite functional layer in the battery to be etched according to the spot overlap rate.

[0099] Figure 5 It is a schematic diagram of a special-shaped structure formed by the discontinuous etching in the second process according to the embodiment of the present invention. Figure 6 It is another schematic diagram of a special-shaped structure formed by the discontinuous etching in the second process according to the embodiment of the present invention. Refer to Figure 5 and Figure 6 , including a first wire groove 901, a second wire groove 902, and a third wire groove 903. The first wire groove 901 is etched through the first process P1, the second wire groove 902 is etched through the second process P2, and the third wire groove 903 is etched through the third process P3. To achieve the discontinuous etching of the second process P2, it can be etched through the special-shaped first process P1 or the third process P3, further compressing the dead zone ratio, improving the geometric fill factor, and increasing the effective power generation of the solar cell module. During the etching of the second process P2, through discontinuous point etching, discontinuous equally spaced wire grooves are etched in the perovskite functional layer. The wire grooves can be of different sizes and shapes such as circular or square. Then, the control module 10 determines the effective contact area formed by a single laser pulse and the spacing between the pulses, so as to achieve the maximum power output without affecting the photoelectric conversion efficiency of the solar cell module while further improving the geometric fill factor of the solar cell module.

[0100] Figure 7 It is according to the embodiment of the present invention Figure 5 The SEM diagram corresponding to P3 in the structure shown. Figure 8 It is according to the embodiment of the present invention Figure 5 The SEM diagram corresponding to P2 in the structure shown. Figure 7 The image at a magnification of X200. Figure 8 The image at a magnification of X100. Refer to Figure 7 and Figure 8 , for the special-shaped structure in the above-mentioned embodiment of the invention to further improve the geometric fill factor, to achieve the discontinuous etching of the second process P2, it can be achieved by editing line segments of different lengths to form the wire grooves of the second process P2, or by controlling the on-off time interval of the laser by the control module to achieve line segment formation. This method requires the high coordination of machinery, laser, and software vision positioning to achieve uniform and specific-length line segments of the second process P2. The point etching method of the embodiment of the present invention can realize points or line segments of different spacings and lengths of the second process P2 by setting the processing line speed, repetition frequency, and focused spot size, and utilizing the light output characteristics of laser pulses.

[0101] In an alternative embodiment of the present invention, the perovskite functional layer includes a first transport layer, a first passivation and modification layer, a perovskite absorption layer, a second transport layer, and a second passivation and modification layer that are sequentially stacked; alternatively, the perovskite functional layer includes a first transport layer, a perovskite absorption layer, and a second transport layer that are stacked.

[0102] In an alternative embodiment of the present invention, the etched groove formed by etching is the second groove of the perovskite component; the perovskite component is provided with a plurality of first grooves, a plurality of second grooves, and a plurality of third grooves along a first direction; the second groove includes a plurality of sub-grooves with preset intervals.

[0103] Specifically, by applying a point-contact etching wire groove, there is a certain distance between adjacent pulses, and the perovskite functional layer is reserved at the distance, forming a second groove including a plurality of sub-grooves with preset intervals. Compared with forming a complete wire groove, it is more conducive to heat conduction, avoids heat accumulation, and reduces the molten bulge at the edge.

[0104] Figure 9 It is a schematic structural diagram of an etching device provided according to an embodiment of the present invention. As Figure 9 shown, the etching device is used to perform the etching method of any embodiment of the present invention, and the etching device includes: a control module 10 for controlling the spot overlap rate to be less than a preset overlap rate; a laser generation module 20 for generating a laser with preset performance parameters; a shaping module 40 for shaping the laser into a rectangular flat-top light; a focusing module 50 for focusing the rectangular flat-top light into a spot with a preset size, and etching the perovskite functional layer in the battery to be etched according to the spot overlap rate.

[0105] In an alternative embodiment of the present invention, referring to Figure 9 , the etching device further includes: an optical path correction module 30, and the optical path correction module 30 is located between the laser generation module 20 and the shaping module 40; the optical path correction module 30 is used to correct and filter the laser.

[0106] In an embodiment of the present invention, the laser generation module 20 includes, but is not limited to, a laser. The preset performance parameters are the performance parameters of the laser generated by the preset laser generation module 20. The performance parameters may include a wavelength range, a frequency range, and a pulse width, etc. Exemplarily, in the embodiment of the present invention, a picosecond laser with a wavelength range of 400 - 800 nm can be selected, the frequency range of the laser is 20 - 1000 KHz, the pulse width is less than 10 picoseconds, and the beam quality M 2≤1.3, the roundness, near-field roundness, and far-field roundness should all be ≥95%, and the laser power is greater than 30W & 50KHz. The beam quality and spot roundness of the laser affect the quality of the flat-top spot after passing through the shaping module 40. The control module 10 controls the laser generation module 20 to emit light and enter the optical path correction module 30. The optical path correction module 30 corrects and filters the received laser. The optical path correction module 30 can correct the laser with a small divergence angle output by the laser generation module 20, making the collimation of the laser generation module 20 higher, the divergence angle smaller, and reducing errors. The optical path correction module 30 can also filter stray light, optimize the spot mode, improve the quality of the spot after shaping and focusing, and avoid the influence of non-demand energy on the film layer. The optical path correction module 30 includes, but is not limited to, a collimating lens and a combination of an adjustable magnification beam expander and a diaphragm. Based on the transformation principle of the lens combination, the collimating lens can perform multiple refractions and transformations on the beam through the cooperation of lenses with different focal lengths and different types, and can precisely control parameters such as the beam waist radius or divergence angle of the beam, so as to obtain a high-quality collimated beam.

[0107] After passing through the optical path correction module 30, both the beam quality and spot size of the laser can meet the incident requirements of the shaping module 40. It is necessary to continuously adjust the angle between the shaping module 40 and the incident light, and the spot incident on the shaping module 40 can be shaped from circular Gaussian light to rectangular flat-top light. The shaped rectangular flat-top light is incident on the focusing module 50, and the focusing module 50 focuses the rectangular flat-top light into a spot with a preset size, and etches the perovskite functional layer in the solar cell module according to the spot overlap rate. Exemplarily, during the process of laser scribing the film layer, a high spot overlap rate forms a complete and smooth-edged wire groove. The spot overlap rate can be expressed by the following formula: O = 1 - (V / F•D); where O represents the spot overlap rate; V represents the processing linear velocity, in mm / s; F represents the repetition frequency used, in KHz; D represents the focused spot diameter, in μm. When using circular Gaussian laser scribing conventionally, the spot overlap rate O needs to be ≥0.6 to achieve complete wire groove scribing. However, in the embodiments of the present invention, there needs to be a certain distance between laser pulses, so it is necessary to control the spot overlap rate O to be less than zero. The preset overlap rate is the maximum value of the spot overlap rate that is preset to meet the scribing requirements. Exemplarily, the preset overlap rate is 0. The application control module 10 controls the spot overlap rate to be less than zero. The specific process is as follows:

[0108] (1) The specific spacing between pulses requires first simulating the minimum contact area between the bottom electrode and the top electrode that does not affect the component performance. First, use the full continuous wire groove etching method to simulate the line width gradient of the wire groove to be etched. By replacing focusing objectives of different specifications or adjusting the magnification of the beam expander, different sizes of focused spots can be achieved. The line width is based on the width W of the fully exposed bottom electrode. Set the length L of a single sub-cell, and set it much lower than the conventional wire groove width W1. Increase the wire groove width in a gradient of 1 micron, which can be expressed as: W1, W2, W3, W4…Wn, Wn+1, Wn+2, Wn+3 respectively. Then the contact areas S between the bottom electrode and the top electrode of a single sub-cell are L*W1, L*W2, L*W3, L*W4…L*Wn, L*Wn+1, L*Wn+2, L*Wn+3 respectively. Then, for the component performance corresponding to different electrode contact areas, the corresponding open-circuit voltage, short-circuit current, fill factor (FillFactor, FF), and power conversion efficiency (Power Conversion Efficiency, PCE) can be concerned. As Figure 3 and Figure 4 shown, when the width W of the fully exposed bottom electrode is less than Wmin, the component performance parameters such as FF and PCE both show an upward trend as the line width increases; when the width W of the fully exposed bottom electrode is greater than or equal to Wmin, the component performance parameters such as FF and PCE are stable in a certain area and fluctuate within a small range. Then the minimum electrode contact area Smin = L*Wmin that does not affect the component performance is determined, and thus the minimum electrode contact area is determined. The materials of the top electrode include but are not limited to metals or metal conductive oxides, such as one or a combination of copper, silver, gold, indium tin oxide, fluorine-doped tin oxide, indium zinc oxide, carbon paste, etc. The manufacturing methods of the top electrode include but are not limited to sputtering deposition, evaporation coating, plasma deposition, screen printing, atomic layer deposition, etc. There are differences in the conductivity and interface contact of different top electrodes. In the case of the same series resistance, the minimum electrode contact area is also different. Therefore, for different top electrodes, simulate the minimum line width that meets the component performance, and then determine the minimum electrode contact area, which can minimize the dead zone ratio, increase the effective power generation area of the component, and further improve the geometric fill factor.

[0109] (2)Based on the width w of the bottom electrode exposed by the rectangular flat-top light spot acting on the perovskite functional layer, the number of pulses N required for the length L of a single sub-cell can be simulated as N = Smin / w²; when the overlap rate of the rectangular flat-top light spot is equal to 0, the wire grooves formed by adjacent pulses are just adjacent but do not overlap. In this case, the number of pulses is represented by N1, and N1 = L / w; to control the overlap rate of the light spot to be less than zero, it is necessary to debug the repetition frequency F and the processing line speed V to satisfy N < N1. The expression for the repetition frequency F is: F = N / (1000V * L); where the unit of the repetition frequency F is KHz, N is the number of pulses required for the length L of a single sub-cell, V is the processing line speed, and L is the length of a single sub-cell; after determining the corresponding processing line speed V and repetition frequency F, the ablation threshold of the perovskite functional layer can be confirmed through the single-pulse energy gradient, and then the optimal single-pulse energy can be matched according to the electron microscope effect (such as removing the perovskite functional layer exposing the bottom electrode without damaging the bottom electrode and avoiding melting at the edge of the wire groove). In this way, dot-etched wire grooves can be formed. When further depositing and preparing the top electrode, point contacts on the wire grooves can be formed, ensuring the overall structure of the wire grooves, avoiding poor electrode contact caused by uneven external force on the local area of the wire grooves during the lamination and encapsulation stage, introducing additional series resistance, and affecting the performance of the component.

[0110] In the technical solution of the embodiment of the present invention, an etching device is provided, and the perovskite functional layer is etched by point contact. The laser beam uses a rectangular flat-top light. Each pulse acts independently on the film layer, and there is a certain distance between pulses. By determining the size of the wire groove formed by a single pulse and the distance between adjacent pulses, it is ensured that the top electrode has sufficient contact area with the bottom electrode through the etched wire grooves; applying a high-quality flat-top light spot, which has the characteristics of high uniformity, high light efficiency, and steep edges, the formed wire grooves are discontinuous, and there is a certain distance between the wire grooves formed by each pulse; using the rectangular flat-top light beam acting on the surface of the film layer, the effect of the edge of the formed wire groove is the same as that of the middle region. When the single-pulse energy reaches the ablation threshold of the perovskite functional layer, a rectangular wire groove with steep edges can be formed, and the bottom electrode can be completely exposed. Using the etching device of the embodiment of the present invention to etch the wire grooves by point contact, there is a certain distance between adjacent pulses, and the perovskite functional layer is retained at the distance, which is more conducive to heat conduction, avoids heat accumulation, and reduces the melting bulge at the edge. In addition, compared with complete wire grooves, using the etching device of the present invention to etch the wire grooves by point contact has the advantage of no pulse overlap. At a fixed repetition frequency, a higher processing line speed can be matched, improving the processing efficiency of the solar cell module. Moreover, since there is no interaction between pulses, optimizing the process only needs to focus on the single-pulse energy of the light beam and the light spot morphology, reducing the debugging difficulty. In addition, on the premise of ensuring the effective contact area between the top electrode and the bottom electrode and not increasing additional series resistance, the size of the wire groove formed by a single pulse and the distance between adjacent pulses can be determined.

[0111] Figure 10It is a schematic structural diagram of a control module in an etching device provided by an embodiment of the present invention. As Figure 10 shown, in an optional embodiment of the present invention, the control module 10 includes: a minimum electrode contact area determination unit 101, configured to determine the minimum electrode contact area according to the minimum electrode width and the length of a single sub-cell; a pulse number determination unit 102, configured to determine the number of pulses required for the length of a single sub-cell according to the minimum electrode contact area; an adjustment unit 103, configured to adjust the spot repetition frequency and the line speed so that the number of pulses is less than a preset number of pulses; and a spot overlap rate determination unit 104, configured to determine the spot overlap rate according to the spot repetition frequency and the line speed that make the number of pulses less than the preset number of pulses.

[0112] Figure 11 It is a schematic structural diagram of another etching device provided by an embodiment of the present invention. As Figure 11 shown, optionally, the optical path correction module 30 includes a beam expander 301 and a diaphragm 302; the beam expander 301 is located between the laser generation module 20 and the diaphragm 302; the diaphragm 302 is located between the beam expander 301 and the shaping module 40; the beam expander 301 is configured to correct the laser with a divergence angle generated by the laser generation module 20; the diaphragm 302 is configured to filter the corrected laser and transmit it to the shaping module 40.

[0113] In an embodiment of the present invention, the laser generation module 20 may be a laser 211. The optical path correction module 30 includes a combination of a beam expander 301 with adjustable magnification and a diaphragm 302. The beam expander 301 can correct the laser with a small divergence angle output by the laser 211, making the collimation of the laser 211 higher and the divergence angle smaller. At the same time, the diaphragm 302 can filter the stray light around the spot, optimize the spot pattern, improve the spot quality after shaping and focusing, and avoid the influence of non-required energy on the film layer. After passing through the beam expander 301 and the diaphragm 302, the beam quality and spot size of the laser can meet the incident requirements of the shaping module 40.

[0114] Based on the technical solutions of the above-described embodiment of the invention, referring to Figure 11 , optionally, the shaping module 40 includes a shaping unit 401 and a spot analysis unit 402; the shaping unit 401 is located between the diaphragm 302 and the focusing module 50; the shaping unit 401 is configured to shape the laser into a rectangular flat-top light; the spot analysis unit 402 is configured to detect the spot shape and energy density distribution of the rectangular flat-top light.

[0115] In an embodiment of the present invention, the shaping unit 401 includes, but is not limited to, shaping lenses and homogenizing lenses. The spot analysis unit 402 includes, but is not limited to, a spot analyzer. Based on the principles of light propagation, refraction, and phase modulation, through a special curved surface design, the shaping lens causes the circular Gaussian light to refract and reflect inside the lens, thereby changing the propagation direction and distribution of the light. By modulating the thickness or refractive index of the lens, different phase delays are generated for the light at different positions, and the light intensity distribution of the circular Gaussian light can be changed from a Gaussian distribution with high center and low edges to a uniform rectangular flat-top distribution. The circular Gaussian light corrected and filtered by the optical path correction module 30 is incident on the shaping lens, and the shaping lens shapes the circular Gaussian light into a rectangular flat-top light. At the same time, a spot analyzer is used to detect the corresponding spot shape and energy density distribution behind the shaping lens to ensure the quality of the rectangular flat-top light.

[0116] Based on the technical solution of the above-mentioned embodiment of the invention, with reference to Figure 11 , optionally, the focusing module 50 includes a reflection unit 501 and a focusing unit 502; the reflection unit 501 is used to introduce the rectangular flat-top light into the focusing unit 502; the focusing unit 502 is used to focus the rectangular flat-top light into a spot with a preset size.

[0117] In an embodiment of the present invention, the preset size is a spot size preset to meet the requirement of the spot overlap rate. The reflection unit 501 includes, but is not limited to, a reflecting mirror. The focusing unit 502 includes, but is not limited to, a focusing lens. The rectangular flat-top light formed after shaping passes through a 45-degree reflecting lens to introduce the light beam into the focusing lens in the vertical direction and is focused into the corresponding spot size to realize the etching of the perovskite functional layer.

[0118] Based on the technical solution of the above-mentioned embodiment of the invention, with reference to Figure 11 , optionally, the battery to be etched is provided with a plurality of first grooves 100 along the first direction X; the etching device further includes: a vision positioning module 60; the vision positioning module 60 is connected to the control module 10; the vision positioning module 60 is used to determine the positioning reference line of the first groove 100 and transmit it to the control module 10; the control module 10 is used to set a compensation amount according to the positioning reference line to control the distance from the first groove 100.

[0119] In an embodiment of the present invention, the vision positioning module 60 includes, but is not limited to, a vision positioning system. The vision positioning system is a system that uses a vision sensor to obtain image information and determines the position, posture, and motion state of the target object through image processing and analysis techniques. The vision positioning system is used to obtain the positioning reference line of the first groove 100 and transmit it to the control module 10. The control module 10 sets the corresponding compensation amount according to the positioning reference line of the first groove 100 to control the distance between the groove to be etched and the first groove 100, reducing the dead zone of the solar cell module.

[0120] Based on the technical solutions of the above-mentioned invention embodiments, with reference to Figure 10 , optionally, the etching device further includes: a dust suction module 70; the dust suction module 70 is used to suck the decomposed particle generated during the etching process.

[0121] In the embodiments of the present invention, the dust suction module 70 includes, but is not limited to, a dust suction system such as a vacuum cleaner. The dust suction module 70 adopts a wrapped side suction, with a square covering the scribing area, ensuring that the generated dust is all controlled within the dust suction area, and adopting the side suction method can avoid the air duct reflux generated, resulting in the dust falling back onto the film surface again, thereby avoiding contamination of the film surface.

[0122] The etching device provided by the embodiments of the present invention can execute the etching method provided by any embodiment of the present invention, and has the corresponding functional modules and beneficial effects for executing the method.

[0123] Figure 12 is a schematic structural diagram of a solar cell module provided according to an embodiment of the present invention. The solar cell module is formed by the etching method described in any embodiment of the present invention; as Figure 12 shown, the solar cell module includes: a plurality of battery units 80; the battery unit 80 includes a bottom electrode layer 801, a perovskite functional layer 802, and a top electrode layer 803 that are sequentially stacked; the solar cell module is provided with a plurality of first grooves 100, a plurality of second grooves 200, and a plurality of third grooves 300 along the first direction X; the solar cell module is divided into a plurality of battery units 80 that are sequentially connected in series through the plurality of first grooves 100, the plurality of second grooves 200, and the plurality of third grooves 300; the first groove 100 penetrates through the bottom electrode layer 801; the second groove 200 includes a plurality of sub-grooves 201, and the plurality of sub-grooves 201 are arranged at a preset interval along the second direction Y; the sub-groove 201 penetrates through the perovskite functional layer 802; the third groove 300 penetrates through the top electrode layer 803 and the perovskite functional layer 802.

[0124] In the embodiments of the present invention, the solar cell module further includes a glass substrate 800. The bottom electrode layer 801 is located on one side of the glass substrate 800. The perovskite functional layer 802 is located on the side of the bottom electrode layer 801 away from the glass substrate 800. The perovskite functional layer 802 includes a first transport layer, a first passivation and modification layer, a perovskite absorption layer, a second transport layer, and a second passivation and modification layer that are sequentially stacked, and the perovskite functional layer 802 may further include an ultraviolet protection layer. Among them, the first transport layer may be a hole transport layer, and the second transport layer may be an electron transport layer. The perovskite functional layer 802 is the core area for absorbing sunlight and generating electron-hole pairs. The top electrode layer 803 is located on the side of the perovskite functional layer 802 away from the bottom electrode layer 801.

[0125] The solar cell module is divided into a plurality of battery units 80 connected in series in sequence through a plurality of first grooves 100, a plurality of second grooves 200, and a plurality of third grooves 300. The formed grooves provide channels for connecting the positive and negative electrodes of adjacent battery units 80. The first groove 100 penetrates the bottom electrode layer 801, and the perovskite functional layer 802 is filled in the first groove 100, which helps to optimize the electric field distribution and carrier transport path inside the battery unit 80. When sunlight irradiates the perovskite functional layer 802, the generated electron-hole pairs can be separated and transported more efficiently under the action of the bottom electrode layer 801 and the top electrode layer 803, thereby improving the photoelectric conversion efficiency of the solar cell module.

[0126] The second groove 200 includes a plurality of sub-grooves 201, and the plurality of sub-grooves 201 are arranged at a preset interval along the second direction Y, avoiding the heat accumulation in the light pulse overlapping area, improving the morphology of the groove, being more conducive to the deposition of the top electrode layer 803, and avoiding the possibility that the thinned top electrode layer 803 is pierced by the crater of the second groove 200.

[0127] It should be noted that during the process of fabricating the solar cell module, after the top electrode layer 803 is fabricated, whether the sub-groove 201 is visually visible depends on the fabrication process of the top electrode layer 803. Specifically, the visible light transmittance of the top electrode layer 803 affects the visual clarity of the sub-groove 201. Exemplarily, when the visible light transmittance of the top electrode layer 803 is high, the visual clarity of the sub-groove 201 is also high; when the visible light transmittance of the top electrode layer 803 is low, the corresponding visual clarity of the sub-groove 201 is also low. Figure 12 The visibility of the shown sub-groove 201 is only for schematic reference and is not specifically limited herein.

[0128] Figure 13 It is a schematic structural diagram of the solar cell module after completing the second process according to an embodiment of the present invention. As Figure 13 shown, a plurality of first grooves 100 and second grooves 200 are arranged along the first direction X. Along the second direction Y, the second groove 200 includes a plurality of sub-grooves 201 arranged at intervals. This structure further includes a glass substrate 800, a bottom electrode layer 801, and a perovskite functional layer 802. Figure 13 The locally enlarged part in [Figure] includes the bottom electrode layer 801 exposed after etching to form the sub-groove 201, and the perovskite functional layer 802 that is not etched. Referring to Figure 12 , after forming the Figure 13 shown structure, the top electrode layer 803 can be further formed and the third process can be carried out to form the third groove 300, thereby forming a complete solar cell module.

[0129] It should be understood that the various forms of processes shown above can be used, with steps reordered, added, or deleted. For example, the steps described in the present invention can be executed in parallel, sequentially, or in different orders, as long as the desired results of the technical solution of the present invention can be achieved, and no limitation is imposed herein.

[0130] The above specific embodiments do not constitute a limitation on the protection scope of the present invention. Those skilled in the art should understand that various modifications, combinations, sub - combinations, and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.

Claims

1. An etching method, characterized in that, The etching method is used to etch the perovskite functional layer of the battery to be etched; the etching method includes the steps of: Controlling the spot overlap rate to be less than a preset overlap rate; Generating a laser with preset performance parameters; Shaping the laser into a rectangular flat-top light; Focusing the rectangular flat-top light into a spot with a preset size, and etching the perovskite functional layer in the battery to be etched according to the spot overlap rate.

2. The etching method according to claim 1, wherein After focusing the rectangular flat-top light into a spot with a preset size and etching the perovskite functional layer in the battery to be etched according to the spot overlap rate, it includes: Forming etched grooves with a preset interval in the perovskite functional layer.

3. The etching method according to claim 1, characterized in that The controlling the spot overlap rate to be less than a preset overlap rate includes: Determining the minimum electrode contact area according to the minimum electrode width and the length of a single sub-cell; Determining the number of pulses required for the length of the single sub-cell according to the minimum electrode contact area; Adjusting the spot repetition frequency and the linear velocity to make the number of pulses less than a preset number of pulses; Determining the spot overlap rate according to the spot repetition frequency and the linear velocity that make the number of pulses less than a preset number of pulses.

4. The etching method according to claim 3, characterized in that, The battery to be etched includes a bottom electrode and a perovskite functional layer stacked in sequence; the determining the number of pulses required for the length of the single sub-cell according to the minimum electrode contact area includes: Determining the width of the bottom electrode exposed after the spot acts on the perovskite functional layer; Determining the number of pulses required for the length of the single sub-cell according to the ratio of the minimum electrode contact area to the square of the width of the exposed bottom electrode.

5. The etching method according to claim 1, characterized in that, After generating the laser with preset performance parameters, it further includes: Correcting and filtering the laser.

6. The etching method according to claim 1, wherein The perovskite functional layer includes a first transport layer, a first passivation modification layer, a perovskite absorption layer, a second transport layer, and a second passivation modification layer stacked in sequence; or, the perovskite functional layer includes a first transport layer, a perovskite absorption layer, and a second transport layer stacked in sequence.

7. The etching method according to claim 1, characterized in that, The etched grooves formed by etching are the second etched grooves of the perovskite component; the perovskite component is provided with a plurality of first etched grooves, a plurality of second etched grooves, and a plurality of third etched grooves along a first direction; the second etched grooves include a plurality of sub-etched grooves with a preset interval.

8. An etching device, characterized in that, Implementing the etching method according to any one of claims 1-7; the etching device includes: A control module for controlling the spot overlap rate to be less than a preset overlap rate; A laser generation module for generating a laser with preset performance parameters; A shaping module for shaping the laser into a rectangular flat-top light; A focusing module for focusing the rectangular flat-top light into a spot with a preset size and etching the perovskite functional layer in the battery to be etched according to the spot overlap rate.

9. The etching device according to claim 8, wherein The control module includes: A minimum electrode contact area determination unit for determining the minimum electrode contact area according to the minimum electrode width and the length of a single sub-cell; A pulse number determination unit for determining the number of pulses required for the length of the single sub-cell according to the minimum electrode contact area; An adjustment unit for adjusting the spot repetition frequency and the linear velocity to make the number of pulses less than a preset number of pulses; A spot overlap rate determination unit, configured to determine a spot overlap rate according to a spot repetition frequency and a linear velocity that make the number of pulses less than a preset number of pulses.

10. The etching device according to claim 8, characterized in that, It further includes: An optical path correction module; The optical path correction module is located between the laser generation module and the shaping module; The optical path correction module is configured to correct and filter the laser.

11. The etching device according to claim 10, characterized in that, The optical path correction module includes a beam expander and a diaphragm; the beam expander is located between the laser generation module and the diaphragm; the diaphragm is located between the beam expander and the shaping module; The beam expander is configured to correct the laser with a divergence angle generated by the laser generation module; The diaphragm is configured to filter the corrected laser and transmit it to the shaping module.

12. The etching device according to claim 11, wherein, The shaping module includes a shaping unit and a spot analysis unit; the shaping unit is located between the diaphragm and the focusing module; The shaping unit is configured to shape the laser into a rectangular flat-top light; The spot analysis unit is configured to detect the spot shape and energy density distribution of the rectangular flat-top light.

13. The etching apparatus according to claim 8, wherein The focusing module includes a reflection unit and a focusing unit; The reflection unit is configured to introduce the rectangular flat-top light into the focusing unit; The focusing unit is configured to focus the rectangular flat-top light into a spot with a preset size.

14. The etching device according to claim 8, wherein The battery to be etched is provided with a plurality of first grooves along a first direction; The etching device further includes: a vision positioning module; the vision positioning module is connected to the control module; The vision positioning module is configured to determine a positioning reference line of the first groove and transmit it to the control module; The control module is configured to set a compensation amount according to the positioning reference line to control the distance from the first groove.

15. The etching device according to claim 8, wherein, It further includes: A dust suction module; The dust suction module is configured to suck decomposition product particles generated during the etching process.

16. A solar cell module, characterized in that, Formed by applying the etching method according to any one of claims 1-7; the solar cell module includes a plurality of cell units; the cell unit includes a bottom electrode layer, a perovskite functional layer, and a top electrode layer that are sequentially stacked; The solar cell module is provided with a plurality of first grooves, a plurality of second grooves, and a plurality of third grooves along a first direction; the solar cell module is divided into a plurality of cell units that are sequentially connected in series through the plurality of first grooves, the plurality of second grooves, and the plurality of third grooves; The first groove penetrates through the bottom electrode layer; the second groove includes a plurality of sub-grooves, and the plurality of sub-grooves are arranged at a preset interval along a second direction; the sub-groove penetrates through the perovskite functional layer; the third groove penetrates through the top electrode layer and the perovskite functional layer.

Images