Crystal defect detection system, control method, medium and program product

Abstract

The present application provides a crystal defect detection system, control method, medium, and program product. The crystal defect detection system is used to detect crystal defects in semiconductor devices. The crystal defect detection system includes: a stage, an excitation module, a detection module, an image acquisition module, and a data processing module. The excitation module is disposed on one side of the stage and is used to emit an excitation light beam to a target area of ​​the semiconductor device to excite the semiconductor device to generate carriers; the detection module is disposed on one side of the stage and is used to emit a detection light beam to the target area; the image acquisition module is disposed on one side of the stage and is used to receive a first light beam emitted from the semiconductor device and generate a first signal and a second signal based on the first light beam; the data processing module is used to generate crystal defect information about the target area based on the first signal and the second signal. The crystal defect detection system provided in the present application can perform non-destructive testing on semiconductor devices.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor technology, and in particular to a crystal defect detection system, a control method, a medium, and a program product. Background Art

[0002] In semiconductor devices fabricated using crystal growth processes, seed crystal inheritance, internal crystal stress, and impurities inevitably lead to crystal defects in the semiconductor devices. Furthermore, when homoepitaxial growth is performed on a substrate with crystal defects, dislocation defects in the substrate extend and transform into the epitaxial layer, resulting in a large number of extended defects in the epitaxial layer. These crystal defects seriously affect the performance of semiconductor devices.

[0003] In related technologies, the surface of semiconductor devices is etched with high-temperature molten potassium hydroxide (KOH). Because regions with crystal defects have varying corrosion rates, these regions produce distinct, well-defined, and regularly shaped etch pits. Crystal defects in semiconductor devices are identified based on their shape and number. KOH corrosion damages semiconductor devices, rendering them unusable. Consequently, the crystal defect detection process in related technologies is cumbersome, costly, and limited to random sampling, hindering defect control and optimization during semiconductor device production. Summary of the Invention

[0004] The present application provides a crystal defect detection system, a control method, a medium, and a program product, which can perform non-destructive detection of crystal defects in semiconductor devices.

[0005] In one aspect, an embodiment of the present application provides a crystal defect detection system, which is used to detect crystal defects in semiconductor devices. The crystal defect detection system includes:

[0006] A stage for placing semiconductor devices;

[0007] An excitation module is provided on one side of the stage and is used to emit an excitation light beam to a target area on the semiconductor device to excite the semiconductor device to generate carriers;

[0008] A detection module is provided on one side of the stage and is used to emit a detection beam toward the target area;

[0009] an image acquisition module disposed on one side of the stage, the image acquisition module being configured to receive a first light beam emitted from the semiconductor device and generate a detection signal based on the first light beam, the detection signal comprising a first signal generated based on a light wave generated by the excitation light beam and the detection light beam acting on the target area, and a second signal generated based on a light wave generated by the detection light beam acting on the target area;

[0010] The data processing module is signal-connected to the image acquisition module, and is used to generate crystal defect information about the target area according to the first signal and the second signal.

[0011] In some embodiments, the detection module includes a first detection light source, the first detection light source and the image acquisition module are arranged on the first side of the stage, the first detection light source is used to emit a first detection beam to the target area, the first beam includes a reflected beam generated by the detection beam in the target area, and the image acquisition module is used to receive the reflected beam to generate a detection signal.

[0012] In some embodiments, the stage includes a first side and a second side disposed opposite to each other, the image acquisition module is disposed on the first side of the stage, the detection module includes a second detection light source, and the second detection light source is disposed on the second side of the stage.

[0013] The second detection light source is used to emit a second detection light beam to the semiconductor device. The first light beam includes a transmitted light beam generated by the detection light beam in the target area. The image acquisition module is used to receive the transmitted light beam to generate a detection signal.

[0014] In some embodiments, the excitation beam and the detection beam are both periodic pulse beams, the pulse width of the excitation beam and the pulse width of the detection beam are the same, and the data processing module includes:

[0015] A first calculation unit, configured to calculate a first average signal based on a plurality of first signals within a preset time period;

[0016] A second calculation unit, configured to calculate a second average signal based on a plurality of second signals within a preset time period;

[0017] The third calculation unit is configured to calculate a difference between the first average signal and the second average signal, and generate crystal defect information about the target area according to the difference.

[0018] In some embodiments, the excitation module is used to emit an excitation beam of a first repetition frequency to the semiconductor device, and the detection module is used to emit a detection beam of a second repetition frequency to the semiconductor device; the first repetition frequency is f1, the second repetition frequency is f2, n*f1=f2, n>1, and n is a positive integer.

[0019] In some embodiments, the crystal defect detection system further comprises:

[0020] The synchronous modulation module is connected to the detection module and the excitation module respectively. The synchronous modulation module is used to adjust the phase of one of two adjacent light pulses in the excitation light beam to be the same as the phase of the light pulse of the pulse light beam, 2*f1=f2.

[0021] In some embodiments, the crystal defect information includes at least one of a screw dislocation, an edge dislocation, a basal plane dislocation, and a stacking fault.

[0022] In some embodiments, the semiconductor device is any one of an ingot, an epitaxial growth, and a substrate.

[0023] In some embodiments, the semiconductor material of the semiconductor device includes any one of silicon carbide, gallium nitride, gallium arsenide, indium phosphide, zinc selenide, cadmium telluride, and gallium oxide.

[0024] In some embodiments, the photon energy of the excitation light beam is greater than the band gap of the semiconductor material of the semiconductor device.

[0025] In some embodiments, the photon energy of the probe beam is less than the band gap of the semiconductor material of the semiconductor device.

[0026] In a second aspect, a control method for a crystal defect detection system is provided. The control method is applied to the crystal defect detection system as described above, and the control method includes:

[0027] Controlling the excitation module to emit an excitation light beam to a target area on the semiconductor device to excite the semiconductor device to generate carriers;

[0028] Controlling the detection module to emit a detection beam toward the target area;

[0029] controlling an image acquisition module to receive a first light beam emitted from the semiconductor device and to generate at least one detection signal based on the first light beam, the detection signal comprising a first signal generated based on a light wave generated by the excitation light beam and the detection light beam acting on the target area, and a second signal generated based on a light wave generated by the detection light beam acting on the target area;

[0030] The control data processing module generates crystal defect information about the target area according to the first signal and the second signal of the detection signal.

[0031] According to a third aspect, a computer storage medium is provided, wherein computer program instructions are stored on the computer storage medium, and when the computer program instructions are executed by a processor, the control method of the crystal defect detection system as described above is implemented.

[0032] In a fourth aspect, a computer program product is provided, wherein the computer program product includes computer program instructions, and when the computer program instructions are executed by a processor, the control method of the crystal defect detection system as described above is implemented.

[0033] In the crystal defect detection system, control method, medium and program product provided by the present application, an excitation module is set up so that the excitation module can emit an excitation light beam to the target area of ​​the semiconductor device to excite the semiconductor device to generate carriers; by setting up a detection module and an image acquisition module, the detection module can emit a detection light beam to the target area, so that the image acquisition module can receive a first light beam emitted from the semiconductor device, and generate a first signal based on the light wave generated by the excitation light beam and the detection light beam acting together on the target area, and a second signal based on the light wave generated by the detection light beam acting on the target area. The first signal and the second signal can reflect the disturbance of the first light beam by the carriers; crystal defects are used to cause annihilation of carriers, and a data processing module is set up to analyze the first signal and the second signal to generate crystal defect information about the target area; the crystal defect detection system performs non-destructive testing on semiconductor devices so that the semiconductor devices can continue to work, the detection process is simple, and random inspection and full inspection of multiple semiconductor devices produced in the same batch can be realized. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Figure 1 is a schematic structural diagram of a crystal defect detection system provided by some embodiments of the present application;

[0035] Figure 2 is a schematic diagram of an excitation beam and a detection beam acting on a semiconductor device according to some embodiments of the present application;

[0036] Figure 3 is a schematic diagram of the working principle of the image acquisition module provided in some embodiments of the present application;

[0037] Figure 4 Schematic diagram of the waveforms of the excitation beam, detection beam, image acquisition module shutter, and detection signal provided in some embodiments of the present application;

[0038] Figure 5 Schematic diagram of the waveforms of the excitation beam, detection beam, image acquisition module shutter, and detection signal provided in some embodiments of the present application;

[0039] Figure 6 is a schematic diagram of a partial cross-sectional structure of a semiconductor device provided by some embodiments of the present application;

[0040] Figure 7 is a schematic diagram of a partial top view of a semiconductor device provided by some embodiments of the present application;

[0041] Figure 8 Some embodiments of the present application provide images of crystal defects of semiconductor devices and images captured under white light;

[0042] Figure 9Some embodiments of the present application provide images of crystal defects of semiconductor devices and images captured under white light;

[0043] Figure 10 This is a partial structural diagram of a crystal defect detection system provided in some embodiments of the present application.

[0044] Description of Figure Numbers:

[0045] 100. Crystal defect detection system; 200. Semiconductor device;

[0046] 1. Stage; 2. Excitation module; 3. Detection module; 31. First detection light source; 32. Second detection light source; 4. Image acquisition module; 5. Data processing module; 51. First calculation unit; 52. Second calculation unit; 53. Third calculation unit; 6. Synchronous modulation module;

[0047] X, first direction; Y, second direction. DETAILED DESCRIPTION

[0048] In order to more clearly understand the above-mentioned objectives, features and advantages of the present disclosure, the scheme of the present disclosure will be further described below. It should be noted that the embodiments of the present disclosure and the features therein can be combined with each other in the absence of conflict.

[0049] In the following description, many specific details are set forth to facilitate a full understanding of the present disclosure, but the present disclosure may also be implemented in other ways different from those described herein; it is obvious that the embodiment in the specification is only one embodiment of the present disclosure, rather than all embodiments.

[0050] See also Figure 1In one aspect, an embodiment of the present application provides a crystal defect detection system for detecting crystal defects in a semiconductor device 200. The crystal defect detection system includes: a stage 1, an excitation module 2, a detection module 3, an image acquisition module 4, and a data processing module 5. The stage 1 is used to place the semiconductor device 200; the excitation module 2 is disposed on one side of the stage 1 and is used to emit an excitation light beam to a target area on the semiconductor device 200 to excite the semiconductor device 200 to generate carriers; the detection module 3 is disposed on one side of the stage 1 and is used to emit a detection light beam to the target area; the image acquisition module 4 is disposed on one side of the stage 1 and is used to receive a first light beam emitted from the semiconductor device 200 and generate at least one detection signal based on the first light beam. The detection signal includes a first signal generated based on a light wave generated by the excitation light beam and the detection light beam acting on the target area, and a second signal generated based on a light wave generated by the detection light beam acting on the target area; the data processing module 5 is signal-connected to the image acquisition module 4 and is used to generate crystal defect information about the target area based on the first and second detection signals.

[0051] The present application provides a crystal defect detection system for detecting crystal defects in a semiconductor device 200. The detection process does not damage the semiconductor device 200, allowing the semiconductor device 200 to continue to be used. The semiconductor device 200 can be a crystal ingot, epitaxial growth, substrate, etc. prepared based on any crystal growth technology. The semiconductor device 200 is made entirely or partially of semiconductor materials, including but not limited to silicon carbide (SiC), gallium nitride (GaN), gallium arsenide (GaAs), indium phosphide (InP), zinc selenide (ZnSe), cadmium telluride (CdTe), and gallium oxide (β-Ga2O3).

[0052] The stage 1 can provide a flat surface for placing the semiconductor device 200 to ensure that the position of the semiconductor device 200 is stable. In some embodiments, the crystal defect detection system includes a first driving module, which is connected to the stage 1 and can drive the stage 1 to move, thereby causing the semiconductor device 200 placed on the stage 1 to move relative to the image acquisition module 4, the excitation module 2, and the detection module 3. In other embodiments, the crystal defect detection system includes a second driving module, which is respectively connected to the image acquisition module 4, the excitation module 2, and the detection module 3. The second driving module can drive the image acquisition module 4, the excitation module 2, and the detection module 3 to move, thereby changing the position of the semiconductor device 200 on the stage 1 relative to the image acquisition module 4, the excitation module 2, and the detection module 3. By changing the position of the semiconductor device 200 relative to the image acquisition module 4, the excitation module 2, and the detection module 3, crystal defect detection can be performed on different areas of the semiconductor device 200.

[0053] The excitation module 2 can emit an excitation light beam outward, and the position of the excitation module 2 relative to the semiconductor device 200 is adjusted so that the excitation light beam irradiates a target area of ​​the semiconductor device 200 .

[0054] The detection module 3 can emit a detection beam outward, and adjust the position of the detection module 3 relative to the semiconductor device 200 so that the detection beam is irradiated to the target area of ​​the semiconductor device 200, that is, the detection module 3 and the excitation module 2 are irradiated to the same area of ​​the semiconductor device 200. The detection beam is reflected or transmitted in the target area, and a first beam is emitted from the semiconductor device 200. Those skilled in the art can set the size and shape of the target area as needed. Optionally, the excitation beam and the detection beam are both point light sources or surface light sources, so that the light intensity of the excitation beam and the detection beam acting on the target area is consistent. Optionally, please refer to Figure 2 The light spots generated by the excitation beam and the detection beam on the semiconductor device at least cover the target area, and the light spot S2 generated by the detection beam on the semiconductor device 200 is larger than the light spot S1 generated by the excitation beam on the semiconductor device 200 to ensure that the light spot S2 generated by the detection beam on the semiconductor device 200 covers the light spot S1 generated by the excitation beam on the semiconductor device 200.

[0055] The image acquisition module 4 can achieve photoelectric conversion. The detection light beam is reflected or transmitted in the target area, and a first light beam is emitted from the semiconductor device 200. The image acquisition module 4 can receive the first light beam and generate a detection signal based on the first light beam. The detection signal can represent the intensity change of the first light beam. In some embodiments, the image acquisition module 4 includes a charge coupled device (CCD) and / or a complementary metal oxide semiconductor (CMOS), and photoelectric conversion is achieved through the CCD and / or CMOS. The detection signal generated by the image acquisition module 4 can be an analog signal or a digital signal. The analog signal can be a voltage signal or a current signal.

[0056] Image acquisition module 4 may include a photosensitive unit. When the first light beam impinges on image acquisition module 4, the photosensitive unit outputs a detection signal. Data processing module 5 processes this detection signal to obtain an image of the target area. Image acquisition module 4 includes multiple photosensitive units. When the first light beam impinges on image acquisition module 4, the first light beam strikes each photosensitive unit with varying intensities, causing each of the multiple photosensitive units to output a different detection signal. Data processing module 5 processes the multiple detection signals to obtain at least pixel blocks corresponding to each detection signal. By splicing these pixel blocks, an image of the target area can be obtained.

[0057] The excitation light beam can excite the semiconductor device 200 to generate photogenerated carriers. Optionally, the carriers include electrons and holes. When the excitation light beam is not irradiated to the target area and the detection light beam is irradiated to the target area, the excitation light beam is not irradiated to the target area, and the target area does not generate carriers. The image acquisition module 4 collects the first light beam to generate a second signal. When the excitation light beam and the detection light beam are irradiated to the target area at the same time, the generated carriers can absorb the photons of the detection light beam, and can also affect the dielectric constant of the semiconductor device 200, change the refractive index of the semiconductor device 200, and disturb the intensity of the first light beam emitted from the semiconductor device 200. The excitation light beam is irradiated to the target area, and the target area generates carriers that disturb the first light beam. The image acquisition module 4 collects the first light beam to generate a first signal. The difference between the first signal and the second signal can represent the intensity change of the first light beam, so that the carrier concentration distribution of the target area can be known through the detection signal generated by one or more photosensitive units.

[0058] When there are crystal defects in the target area of ​​the semiconductor device 200, the crystal defects will cause carrier annihilation, resulting in a lower carrier concentration at the crystal defects than at the area without crystal defects, and the amplitude of the corresponding detection signal will change. Therefore, by analyzing the detection signal, the carrier concentration distribution in the target area can be known, and the position of the crystal defects can be located and the morphological characteristics of the crystal defects can be obtained through the carrier concentration distribution. In this application, the crystal defect information includes but is not limited to the position, morphological characteristics, and defect type of the crystal defects on the semiconductor device 200. The crystal defect information can be presented by marking the crystal defects on the image showing the semiconductor device 200. For example Figure 2 The crystal defect information is an image of the semiconductor device 200 , in which a mark is displayed in the area corresponding to the crystal defect.

[0059] For example, during time t1, excitation module 2 emits an excitation beam toward the target area, and detection module 3 emits a detection beam toward the target area. The excitation beam excites semiconductor device 200 to generate carriers, and the detection beam generates a first beam disturbed by the carriers in semiconductor device 200. Image acquisition module 4 captures this first beam to generate a first signal.

[0060] During time t2, the excitation module 2 stops emitting the excitation beam toward the target area, while the detection module 3 continues emitting the detection beam toward the target area. The detection beam generates a first beam that is not disturbed by carriers in the semiconductor device 200. The image acquisition module 4 captures the first beam to generate a second signal.

[0061] The data processing module 5 generates a block corresponding to the photosensitive unit based on the difference between the first signal and the second signal output by the same photosensitive unit. The data processing module 5 splices the blocks corresponding to multiple photosensitive units to obtain an image of the semiconductor device 200, and marks the location of the crystal defect and the defect type corresponding to the crystal defect in the image.

[0062] In the present application, an excitation module 2 is set up so that the excitation module 2 can emit an excitation light beam to the target area of ​​the semiconductor device 200 to excite the semiconductor device 200 to generate carriers; a detection module 3 and an image acquisition module 4 are set up so that the detection module 3 can emit a detection light beam to the target area, so that the image acquisition module 4 can receive a first light beam emitted from the semiconductor device 200, and generate a first signal based on the light wave generated by the excitation light beam and the detection light beam acting together on the target area, and a second signal based on the light wave generated by the detection light beam acting on the target area. The first signal and the second signal can reflect the disturbance of the first light beam by the carriers; crystal defects are used to cause annihilation of carriers, and a data processing module 5 is set up to analyze the first signal and the second signal to generate crystal defect information about the target area; the crystal defect detection system performs non-destructive testing on the semiconductor device 200, so that the semiconductor device 200 can continue to work, the detection process is simple, and random inspection and full inspection of multiple semiconductor devices 200 produced in the same batch can be realized.

[0063] In some embodiments, the semiconductor device 200 includes a first surface and a second surface along its thickness direction. After detecting the crystal defects distributed on the first surface, the semiconductor device 200 can be flipped over to detect the crystal defects distributed on the second surface, thereby detecting crystal defects on both surfaces of the semiconductor device 200. The type of element forming the first surface and the type of element forming the second surface can be different, and the content of the same element in the first surface and the second surface can be different. Optionally, the semiconductor device 200 is a silicon carbide wafer, the first surface is a carbon surface and the second surface is a silicon surface, and crystal defect detection is performed on the carbon surface and the silicon surface respectively by flipping the semiconductor device 200.

[0064] In some embodiments, the detection module 3 includes a first detection light source 31. The first detection light source 31 and the image acquisition module 4 are arranged on the first side of the stage 1. The first detection light source 31 is used to emit a first detection beam to the target area. The first beam includes a reflected beam generated by the first detection beam in the target area. The image acquisition module 4 is used to receive the reflected beam to generate a detection signal.

[0065] The first detection light source 31, the excitation module 2 and the image acquisition module 4 can all be located on the first side of the stage 1, the first detection light source 31 and the excitation module 2 can be located on opposite sides of the image acquisition module 4, and the central axis L1 of the framing opening of the image acquisition module 4 can be collinear with the central axis of the target area.

[0066] When the excitation beam emitted by the excitation module 2 and the detection beam emitted by the first detection light source 31 are irradiated onto the target area, the carriers affect the intensity of the reflected detection beam by changing the dielectric constant of the material. Therefore, the image acquisition module 4 receives the reflected beam and generates a detection signal that can reflect the distribution of carriers in the target area.

[0067] In some embodiments, the stage 1 includes a first side and a second side disposed opposite to each other, the image acquisition module 4 is disposed on the first side of the stage 1, the detection module 3 includes a second detection light source 32, and the second detection light source 32 is disposed on the second side of the stage 1.

[0068] The second detection light source 32 is used to emit a second detection beam to the semiconductor device 200. The first beam includes a transmitted beam generated by the detection beam in the target area. The image acquisition module 4 is used to receive the transmitted beam to generate a detection signal.

[0069] The image acquisition module 4 is disposed on the first side of the stage 1, the second detection light source 32 is located on the second side of the semiconductor device 200, and the excitation module 2 can be located on either the first or second side of the stage 1. Alternatively, the excitation module 2 is located on the first side of the stage 1. The central axis L1 of the framing aperture of the image acquisition module 4 can be collinear with the central axis of the target area, and can also be collinear with the axis of the detection beam of the second detection light source 32.

[0070] When the excitation beam emitted by the excitation module 2 and the detection beam emitted by the second detection light source 32 are irradiated onto the target area, carriers absorb the detection beam, thereby perturbing the intensity of the detection beam after it passes through the target area, thereby affecting the intensity of the transmitted beam. Therefore, the image acquisition module 4 receives the transmitted beam and generates a detection signal that can reflect the distribution of carriers in the target area.

[0071] The crystal defect detection system provided in the present application may be provided with only the first detection light source 31, only the second detection light source 32, or both the first detection light source 31 and the second detection light source 32. Those skilled in the art may select the first detection light source 31 and / or the second detection light source 32 to detect crystal defects in the semiconductor device 200 based on the semiconductor material used in the semiconductor device 200 and the thickness of the semiconductor device 200.

[0072] Optionally, the reflectivity of the semiconductor device 200 is greater than the first preset reflectivity, so that the first detection light beam emitted by the first detection light source 31 can be reflected on the semiconductor device 200, and the intensity of the generated reflected light beam meets the requirements of the image acquisition module 4 for the intensity of the acquisition light beam. In this case, the first detection light source 31 can be used to detect crystal defects in the semiconductor device 200.

[0073] Optionally, the transmittance of the semiconductor device 200 is greater than the first preset transmittance, so that the second detection light beam emitted by the second detection light source 32 can pass through the semiconductor device 200, and the intensity of the generated transmitted light beam meets the requirements of the image acquisition module 4 for the intensity of the acquisition light beam. In this case, the second detection light source 32 can be used to detect crystal defects in the semiconductor device 200.

[0074] Optionally, the first detection light source 31 is used to detect crystal defects in the semiconductor device 200, and the data processing module 5 generates first defect information about the semiconductor device 200; the second detection light source 32 is used to detect crystal defects in the semiconductor device 200, and the data processing module 5 generates second crystal defect information about the semiconductor device 200; and the data processing module 5 generates crystal defect information based on the first defect information and the second crystal defect information. The crystal defect information is generated based on the first defect information and the second crystal defect information, thereby increasing the accuracy of the crystal defect information.

[0075] See also Figure 3 In some embodiments, the image acquisition module 4 includes multiple photosensitive units 41, and the photosensitive units 41 are used to generate the detection signal according to the first light beam; the data processing module 5 is used to generate image information corresponding to each of the photosensitive units 41 according to the first signal and the second signal of the detection signal; the data processing module 5 is also used to generate crystal defect information about the target area based on the multiple image information.

[0076] The plurality of photosensitive units 41 may be arranged in an array. Figure 3 As shown in (a), x photosensitive units 41 are arranged into a photosensitive unit group along the first direction X, and y photosensitive unit groups are arranged into a rectangular array along the second direction Y. Each photosensitive unit 41 can establish coordinates according to its order along the first direction X and the second direction Y, and set the coordinates as the identification mark of the photosensitive unit 41. For example: the identification mark of the photosensitive unit 41 that is in the first position along the first direction X and the second direction Y is (1,1), and the identification mark of the photosensitive unit 41 that is in the xth position along the first direction X and the yth position along the second direction Y is (x,y). Figure 3 As shown in (b), any photosensitive unit 41 can generate a detection signal according to the first light beam, and any detection signal has a first signal S pump-on and the second signal S pump-off After the image acquisition module 4 receives the first light beam, the (x*y) photosensitive units 41 generate (x*y) detection signals according to the first light beam, that is, the photosensitive units 41 and the detection signals may correspond one to one.

[0077] like Figure 3As shown in (c), the data processing module 5 can generate image information corresponding to the photosensitive unit 41 for the first signal and the second signal of any detection signal. Figure 3 As shown in (d), the image information corresponding to each photosensitive unit 41 is spliced ​​according to the order in which the multiple photosensitive units 41 are arranged in an array, and an image of the target area can be obtained. The data processing module 5 can generate crystal defect information about the target area based on the image of the target area.

[0078] In some embodiments, the excitation beam and the detection beam are both periodic pulse beams, the pulse width of the excitation beam is the same as the pulse width of the detection beam, and the data processing module 5 includes a first calculation unit 51, a second calculation unit 52 and a third calculation unit 53. The first calculation unit 51 is used to calculate a first average signal based on multiple first signals of the detection signal within a preset time length; the second calculation unit 52 is used to calculate a second average signal based on multiple second signals of the detection signal within a preset time length; the third calculation unit 53 is used to calculate the difference between the first average signal and the second average signal, and generate image information based on the difference.

[0079] Both the excitation beam and the detection beam are pulsed beams, so that the excitation beam and the detection beam periodically emit light pulses, and the pulse width is the duration of each light pulse. Figure 4 At time t1, the excitation light beam begins to emit a light pulse to illuminate the target area. The duration of the light pulse is τ. From t1 to t1+τ, the excitation light beam continues to illuminate the target area. At time t1, the detection light beam begins to emit a light pulse to illuminate the target area. The duration of the light pulse is τ. From t1 to t1+τ, the detection light beam continues to illuminate the target area. The image acquisition module shutter represents the opening and closing rate of the shutter in the image acquisition module 4, where the pulse ON indicates that the image acquisition module shutter is open, corresponding to the generation of a high level in the detection signal, and the pulse OFF indicates that the image acquisition module shutter is closed, corresponding to the generation of a low level in the detection signal.

[0080] Those skilled in the art can set the preset duration as needed. Optionally, 2τ < preset duration < 10s. If the preset duration is too short, the first signal or second signal corresponding to a light pulse irradiating the target area cannot be fully collected. If the preset duration is too long, the data processing module 5 must process an excessive number of signals, increasing the computational burden on the data processing module 5 and reducing the detection efficiency of the crystal defect detection system.

[0081] Within a preset time period, the excitation beam emits a light pulses and the detection beam emits b light pulses. The data processing module 5 can then collect at most a first signal and ba second signals. The first calculation unit 51 can use part or all of the a first signals to calculate a first average signal, and the second calculation unit 52 can use part or all of the ba second signals to calculate a second average signal. This can reduce the accuracy of crystal defect information caused by single signal acquisition errors.

[0082] Exemplarily, the detection signal is a current signal. The first average signal is calculated as follows:

[0083] ;

[0084] Among them, I pump-on is the first average signal, a is the number of first signals, and (x, y) is the coordinate of the photosensitive unit that generates the detection signal in the image acquisition module.

[0085] The second average signal is calculated as follows:

[0086] ;

[0087] Among them, I pump-off is the second average signal, ba is the number of second signals, and (x, y) is the coordinate of the photosensitive unit that generates the detection signal in the image acquisition module.

[0088] In some embodiments, the excitation module 2 is used to emit an excitation light beam with a first repetition frequency to the semiconductor device 200, and the detection module 3 is used to emit a detection light beam with a second repetition frequency to the semiconductor device 200; the first repetition frequency is f1, the second repetition frequency is f2, n*f1=f2, n>1, and n is a positive integer.

[0089] The second repetition frequency of the detection beam is set to an integer multiple of the first repetition frequency of the excitation beam, so that within a preset time length, when the light pulses of multiple detection beams are irradiated to the target area, the light pulses of the excitation beam are not irradiated to the target area, so that the image acquisition module 4 can periodically generate a second signal.

[0090] For example, see Figure 5, 3*f1=f2. From t1 to t1+τ, the excitation beam emits a light pulse that irradiates the target area, and the detection beam emits a light pulse that irradiates the target area; from t2 to t2+τ, the excitation beam stops emitting light pulses, and the detection beam emits a light pulse that irradiates the target area; from t3 to t3+τ, the excitation beam stops emitting light pulses, and the detection beam emits a light pulse that irradiates the target area; from t4 to t4+τ, the excitation beam emits a light pulse that irradiates the target area, and the detection beam emits a light pulse that irradiates the target area. Image acquisition module 4 generates 2a second light signals within a preset time length, which correspondingly generates a first light pattern.

[0091] For example, see Figure 4 , 2*f1=f2. From t1 to t1+τ, the excitation beam emits a light pulse to illuminate the target area, and the detection beam emits a light pulse to illuminate the target area; from t2 to t2+τ, the excitation beam stops emitting light pulses, and the detection beam emits a light pulse to illuminate the target area; from t3 to t3+τ, the excitation beam emits a light pulse to illuminate the target area, and the detection beam emits a light pulse to illuminate the target area; from t4 to t4+τ, the excitation beam stops emitting light pulses, and the detection beam emits a light pulse to illuminate the target area. If the image acquisition module 4 generates a second light signal within a preset time length, it will correspondingly generate a first light signal.

[0092] Please refer to Figure 1 and Figure 4 In some embodiments, the crystal defect detection system also includes a synchronous modulation module 6, which is signal-connected to the detection module and the excitation module 2 respectively. The synchronous modulation module 6 is used to adjust the phase of one of the two adjacent light pulses in the excitation light beam to be the same as the phase of the light pulse of the pulse light beam, 2*f1=f2.

[0093] 2*f1=f2, so that for every light pulse emitted by the excitation module 2, the detection module 3 emits two light pulses. A synchronous modulation module 6 is provided to adjust the phase of one of two adjacent pulses in the excitation light beam to be the same as the pulse in the pulse light beam, so that when the light pulse of the excitation module 2 irradiates the target area, the light pulse of the detection module 3 irradiates the target area at the same time.

[0094] Exemplarily, at time t1, the light pulse of the excitation beam is on a rising edge, and the light pulse of the detection beam is on a rising edge, and the light pulse of the excitation beam and the light pulse of the detection beam are simultaneously irradiated onto the target area. At time t1+τ, the light pulse of the excitation beam is on a falling edge, and the light pulse of the detection beam is on a falling edge, and the light pulse of the excitation beam and the light pulse of the detection beam stop irradiating onto the target area at the same time. From t1 to t1+τ, the phase of the light pulse of the excitation beam is the same as that of the light pulse of the pulse beam. From t2 to t2+τ, the excitation beam stops emitting light pulses, and the detection beam emits light pulses to irradiate the target area; the phase of the light pulse of the excitation beam is different from that of the light pulse of the pulse beam.

[0095] By setting 2*f1=f2 and the pulse width of the excitation beam and the pulse width of the detection beam being the same, the calculation method of the first average signal and the second average signal can be simplified.

[0096] Illustratively, within a preset time period, a first signal is generated based on the light waves generated by the excitation beam and the detection beam acting together on the target area, and then a second signal is generated based on the light waves generated by the detection beam acting on the target area. The first signal and the second signal appear alternately in the detection signal.

[0097] The first average signal and the second average signal are calculated as follows:

[0098] ;

[0099] ;

[0100] ;

[0101] Among them, I pump-on is the first average signal, 2n is the number of times the image sensor collects the first light beam, I(2i-1) is the signal at an odd position in the detection signal, that is, the first signal; I pump-off is the second average signal, I(2i) is the signal at an even position in the detection signal, that is, the second signal; is the difference between the first average signal and the second average signal.

[0102] The larger the amplitude, the greater the carrier concentration, and the smaller the amplitude, the smaller the carrier concentration.

[0103] In some embodiments, the crystal defect information includes at least one of a screw dislocation (TSD), an edge dislocation (TED), a basal plane dislocation (BPD), and a stacking fault (SF).

[0104] Different types of crystal defects have different lattice structures and influence carrier annihilation to varying degrees. Consequently, images of carrier distribution exhibit distinct morphological and intensity characteristics. Different crystal defects have distinct morphological features, which can be used to distinguish different types of crystal defects.

[0105] For example, see Figure 6 and Figure 7 Semiconductor device 200 is a silicon carbide substrate wafer cut at a 4-degree lattice angle. Semiconductor device 200 is positioned opposite image acquisition module 4 along its thickness direction Z. Screw dislocations D1, edge dislocations D2, and basal plane dislocations D3 are all linear dislocations. Screw dislocations D1 and edge dislocations D2 grow perpendicular to the wafer surface and therefore appear as circular dislocations in the image of semiconductor device 200. Because screw dislocations D1 have a greater impact on carriers than edge dislocations D2, their imaging signal is stronger and their appearance is larger. Basal plane dislocations D3 grow on a lattice plane at a 4-degree angle to the wafer and therefore appear as linear dislocations in the image of semiconductor device 200. Stacking faults D4 in the wafer are planar defects, growing on lattice planes at an equal 4-degree angle to the wafer and therefore appear as planar dislocations in the image of semiconductor device 200. Their shape is consistent with the natural shape of the crystal defect, exhibiting a gradient distribution due to the varying depths of the crystal defect. Based on the above morphological features, this method can effectively distinguish and identify screw dislocation D1, edge dislocation D2, basal plane dislocation D3 and stacking fault D4.

[0106] In some embodiments, the photon energy of the excitation light beam is greater than the band gap of the semiconductor material of the semiconductor device 200 , so that the semiconductor device 200 is excited by the excitation light beam to generate carriers.

[0107] The photon energy and wavelength of the excitation beam are inversely proportional. By obtaining the band gap of the semiconductor material, the desired wavelength of the excitation beam can be calculated. Optionally, the semiconductor material is silicon carbide, the excitation beam is ultraviolet light, and the wavelength of the excitation beam is 200 nm to 380 nm.

[0108] In some embodiments, the photon energy of the probe beam is smaller than the band gap of the semiconductor material of the semiconductor device 200 so as to detect carrier transitions of higher-order excited states.

[0109] Optionally, the excitation light beam is ultraviolet light, and the detection light beam is visible light or near-infrared light. Carriers absorb photons within the spectral range of visible light and near-infrared light, affecting the intensity of the first light beam.

[0110] A second aspect of the present application provides a control method for a crystal defect detection system.

[0111] S100, controlling the excitation module 2 to emit an excitation light beam to a target area on the semiconductor device 200 to excite the semiconductor device 200 to generate carriers;

[0112] S200, controlling the detection module 3 to emit a detection beam toward the target area;

[0113] S300, controlling the image acquisition module 4 to receive a first light beam emitted from the semiconductor device 200, and generating at least one detection signal based on the first light beam, the detection signal including a first signal generated based on a light wave generated by the excitation light beam and the detection light beam acting on the target area, and a second signal generated based on a light wave generated by the detection light beam acting on the target area;

[0114] S400 , controlling the data processing module 5 to generate crystal defect information about the target area according to the first signal and the second signal of the detection signal.

[0115] The crystal defect detection system includes the crystal defect detection system 100 of any of the above embodiments. Since the crystal defect detection system 100 adopts all the technical solutions of all the above embodiments, it has at least all the beneficial effects brought by the technical solutions of the above embodiments, which will not be described in detail here.

[0116] After S400 , the control driving module drives the stage 1 to move, and S100 to S400 are executed to generate crystal defect information about another target area.

[0117] The crystal defect information of multiple target regions is spliced ​​together to obtain the crystal defects of the semiconductor device 200 .

[0118] Illustratively, the semiconductor device 200 is a wafer.

[0119] 1) A wafer is placed on the stage 1 , and the driving module can drive the stage 1 to move along a first direction and a second direction, where the first direction and the second direction intersect.

[0120] 2) Adjust the relative position of the image acquisition module 4 and the wafer so that the wafer surface is on the imaging focal plane of the image acquisition module 4 .

[0121] 3) Turn on the excitation module 2 and the detection module 3, adjust the angles of the excitation beam and the detection beam so that the light spot on the wafer overlaps the wafer surface. The wavelength of the excitation beam is 355nm, the spot size is 2cm, the laser repetition rate is 50Hz, the pulse width is <20ns, and the power density is <10mJ / cm 2 The wavelength of the detection beam is 1030nm, the spot size is 5cm, the laser repetition rate is 100Hz, the pulse width is <20ns, and the power density is <1mJ / cm 2 .

[0122] 4) The image acquisition module 4 acquires the first light beam emitted from the target area. The image acquisition module 4 is based on CMOS area array image acquisition with an acquisition frequency of 100 Hz. The image acquisition module 4 includes a 5x optical magnification lens and an 800 long-pass filter.

[0123] 5) The first light beam emitted from a target area is collected for a preset duration, which is less than 10 seconds. After generating crystal defect information about the target area, the drive module drives the stage 1 to move 1 cm in the first direction or the second direction until the entire wafer is inspected and crystal defect information about the semiconductor device 200 is generated.

[0124] See also Figure 8 and Figure 9 ,in, Figure 8 (a) is a crystal defect image of the semiconductor device 200. Figure 8 (b) Figure 8 (a) A magnified image of the crystal defect information marked in area A. Figure 8 (c) Figure 8 (a) Magnified image of area A taken under white light. Figure 9 (a) is a crystal defect image of the semiconductor device 200. Figure 9 (b) Figure 9 (a) A magnified image of the crystal defect information in area B. Figure 9 (c) Figure 9 (a) A magnified image of area B taken under white light. Figure 8 It can be seen that the enlarged image with the crystal defect information marked in this application can accurately display the dislocation defect. Figure 9 It can be seen that the enlarged image with crystal defect information marked in the present application can accurately display stacking fault defects.

[0125] See also Figure 10 The crystal defect detection system may include a processor 1001 and a memory 1002 storing computer program instructions.

[0126] Specifically, the processor 1001 may include a central processing unit (CPU), or an application specific integrated circuit (ASIC), or may be configured to implement one or more integrated circuits of the embodiments of the present application.

[0127] Memory 1002 may include a large-capacity memory for data or instructions. By way of example and not limitation, memory 1002 may include a hard disk drive (HDD), a floppy disk drive, flash memory, an optical disk, a magneto-optical disk, a magnetic tape, or a Universal Serial Bus (USB) drive, or a combination of two or more of these. Where appropriate, memory 1002 may include removable or non-removable (or fixed) media. Where appropriate, memory 1002 may be internal or external to the integrated gateway disaster recovery device. In certain embodiments, memory 1002 is a non-volatile solid-state memory.

[0128] The memory may include read-only memory (ROM), random access memory (RAM), magnetic disk storage media devices, optical storage media devices, flash memory devices, electrical, optical or other physical / tangible memory storage devices. Thus, generally, the memory includes one or more tangible (non-transitory) computer-readable storage media (e.g., memory devices) encoded with software including computer-executable instructions, and when the software is executed (e.g., by one or more processors), it is operable to perform the operations described with reference to the method according to an aspect of the present disclosure.

[0129] The processor 1001 reads and executes computer program instructions stored in the memory 1002 to implement any one of the control methods for the crystal defect detection system in the above embodiments.

[0130] In one example, the crystal defect detection system may further include a communication interface 1003 and a bus 1010. Figure 5 As shown, the processor 1001, the memory 1002, and the communication interface 1003 are connected via a bus 1010 and communicate with each other.

[0131] The communication interface 1003 is mainly used to implement communication between various modules, devices, units and / or equipment in the embodiments of the present application.

[0132] Bus 1010 includes hardware, software, or both that couples the components of the crystal defect detection system to one another. By way of example, and not limitation, a bus may include an Accelerated Graphics Port (AGP) or other graphics bus, an Enhanced Industrial Standard Architecture (EISA) bus, a Front Side Bus (FSB), a HyperTransport (HT) interconnect, an Industrial Standard Architecture (ISA) bus, an InfiniBand interconnect, a Low Pin Count (LPC) bus, a memory bus, a Micro Channel Architecture (MCA) bus, a Peripheral Component Interconnect (PCI) bus, a PCI-Express (PCI-X) bus, a Serial Advanced Technology Attachment (SATA) bus, a Video Electronics Standards Association Local Area Network (VLB) bus, or other suitable buses, or a combination of two or more of these. Where appropriate, bus 1010 may include one or more buses. Although the embodiments of the present application describe and illustrate specific buses, the present application contemplates any suitable bus or interconnect.

[0133] The crystal defect detection system may be based on the above embodiment, thereby realizing a control method and a crystal defect detection system combined with the above crystal defect detection system.

[0134] In addition, in combination with the control method of the crystal defect detection system in the above embodiment, the embodiment of the present application can provide a computer storage medium for implementation. The computer storage medium stores computer program instructions, and when the computer program instructions are executed by the processor, any one of the control methods of the crystal defect detection system in the above embodiment is implemented, and the same technical effect can be achieved. To avoid repetition, it will not be described here. Among them, the above-mentioned computer-readable storage medium may include a non-transitory computer-readable storage medium, such as a read-only memory (ROM), a random access memory (RAM), a magnetic disk or an optical disk, etc., which is not limited here.

[0135] In addition, an embodiment of the present application further provides a computer program product, including computer program instructions, which, when executed by a processor, can implement the steps and corresponding contents of the aforementioned method embodiment.

[0136] It should be understood that the present application is not limited to the specific configurations and processes described above and illustrated in the figures. For the sake of brevity, a detailed description of known methods is omitted here. In the above embodiments, several specific steps are described and illustrated as examples. However, the method process of the present application is not limited to the specific steps described and illustrated. Those skilled in the art can make various changes, modifications, and additions, or change the order of the steps after understanding the spirit of the present application.

[0137] The functional blocks shown in the above block diagrams can be implemented as hardware, software, firmware, or a combination thereof. When implemented in hardware, they may be, for example, electronic circuits, application-specific integrated circuits (ASICs), appropriate firmware, plug-ins, function cards, and the like. When implemented in software, the elements of this application are programs or code segments used to perform the required tasks. Programs or code segments can be stored in a machine-readable medium or transmitted via a data signal carried in a carrier wave over a transmission medium or communication link. "Machine-readable medium" may include any medium capable of storing or transmitting information. Examples of machine-readable media include electronic circuits, semiconductor memory devices, ROMs, flash memory, erasable ROMs (EROMs), floppy disks, CD-ROMs, optical disks, hard disks, fiber optic media, radio frequency (RF) links, and the like. Code segments can be downloaded via a computer network such as the Internet or an intranet.

[0138] It should also be noted that the exemplary embodiments mentioned in this application describe some methods or systems based on a series of steps or devices. However, this application is not limited to the order of the above steps. In other words, the steps can be performed in the order mentioned in the embodiments, or in a different order, or several steps can be performed simultaneously.

[0139] Aspects of the present disclosure have been described above with reference to the flowcharts and / or block diagrams of the methods, devices, and computer program products according to the embodiments of the present disclosure. It should be understood that each box in the flowchart and / or block diagram and the combination of each box in the flowchart and / or block diagram can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, or other programmable data processing device to produce a machine so that these instructions executed by the processor of the computer or other programmable data processing device enable the implementation of the function / action specified in one or more boxes of the flowchart and / or block diagram. Such a processor can be, but is not limited to, a general-purpose processor, a special-purpose processor, a special application processor, or a field programmable logic circuit. It is also understood that each box in the block diagram and / or flowchart and the combination of the boxes in the block diagram and / or flowchart can also be implemented by dedicated hardware that performs the specified function or action, or can be implemented by a combination of dedicated hardware and computer instructions.

[0140] The above is only a specific implementation method of the present application. Those skilled in the art can clearly understand that for the convenience and brevity of description, the specific working processes of the systems, modules and units described above can refer to the corresponding processes in the aforementioned method embodiments, and will not be repeated here. It should be understood that the scope of protection of the present application is not limited to this. Any technician familiar with this technical field can easily think of various equivalent modifications or replacements within the technical scope disclosed in this application, and these modifications or replacements should be included in the scope of protection of this application.

[0141] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the term "comprises" or any other variant thereof is intended to cover non-exclusive inclusion, so that a process, method, article or device that includes a series of elements includes not only those elements, but also other elements not explicitly listed, or elements inherent to such process, method, article or device. In the absence of further limitations, an element defined by the sentence "comprises a ..." does not exclude the presence of other identical elements in the process, method, article or device that includes the element.

Claims

1. A crystal defect detection system, characterized in that: Used to detect crystal defects of semiconductor devices, the crystal defect detection system comprises: A stage for placing semiconductor devices; an excitation module, disposed on one side of the stage, for emitting an excitation light beam toward a target area on the semiconductor device to excite the semiconductor device to generate carriers; A detection module is provided on one side of the stage, and is used to emit a detection beam toward the target area; an image acquisition module disposed on one side of the stage, the image acquisition module being configured to receive a first light beam emitted from the semiconductor device and generate at least one detection signal based on the first light beam, the detection signal comprising a first signal generated based on a light wave generated by the excitation light beam and the detection light beam acting on the target area, and a second signal generated based on a light wave generated by the detection light beam acting on the target area; a data processing module, signal-connected to the image acquisition module, and configured to generate crystal defect information about the target area based on the first and second detection signals; The data processing module is configured to generate image information according to the first signal and the second signal of the detection signal, and generate crystal defect information about the target area according to the image information.

2. The crystal defect detection system according to claim 1, characterized in that: The detection module includes a first detection light source, and the first detection light source and the image acquisition module are arranged on a first side of the object stage. The first detection light source is used to emit a first detection beam to the target area. The first beam includes a reflected beam generated by the first detection beam in the target area. The image acquisition module is used to receive the reflected beam to generate the detection signal.

3. The crystal defect detection system according to claim 1 or 2, characterized in that: The stage includes a first side and a second side that are oppositely arranged, the image acquisition module is arranged on the first side of the stage, the detection module includes a second detection light source, and the second detection light source is arranged on the second side of the stage, The second detection light source is used to emit a second detection beam to the semiconductor device, the first beam includes a transmitted beam generated by the detection beam in the target area, and the image acquisition module is used to receive the transmitted beam to generate the detection signal.

4. The crystal defect detection system according to claim 1, wherein: The image acquisition module includes a plurality of photosensitive units, and the photosensitive units are used to generate the detection signal according to the first light beam; The data processing module is used to generate image information corresponding to each of the photosensitive units according to the first signal and the second signal of the detection signal; The data processing module is further configured to generate crystal defect information about the target area based on the plurality of image information.

5. The crystal defect detection system according to claim 4, characterized in that: The excitation beam and the detection beam are both periodic pulse beams, the pulse width of the excitation beam is the same as the pulse width of the detection beam, and the data processing module includes: a first calculating unit, configured to calculate a first average signal based on a plurality of first signals of the detection signal within a preset time period; a second calculating unit, configured to calculate a second average signal based on a plurality of second signals of the detection signal within the preset time period; The third calculation unit is configured to calculate a difference between the first average signal and the second average signal, and generate information about the image according to the difference.

6. The crystal defect detection system according to claim 5, characterized in that: The excitation module is used to emit an excitation light beam with a first repetition frequency to the semiconductor device, and the detection module is used to emit a detection light beam with a second repetition frequency to the semiconductor device; the first repetition frequency is f1, the second repetition frequency is f2, n*f1=f2, n>1, and n is a positive integer.

7. The crystal defect detection system according to claim 6, characterized in that: The crystal defect detection system further includes: The synchronous modulation module is connected to the detection module and the excitation module respectively. The synchronous modulation module is used to adjust the phase of one of two adjacent light pulses in the excitation light beam to be the same as the phase of the light pulse of the pulse light beam, 2*f1=f2.

8. The crystal defect detection system according to claim 1, wherein: The crystal defect information includes at least one of a screw dislocation, an edge dislocation, a basal plane dislocation, and a stacking fault.

9. The crystal defect detection system according to claim 1, wherein: The semiconductor device is any one of a crystal ingot, an epitaxial growth device and a substrate.

10. The crystal defect detection system according to claim 1, wherein: The semiconductor material of the semiconductor device includes any one of silicon carbide, gallium nitride, gallium arsenide, indium phosphide, zinc selenide, cadmium telluride, and gallium oxide.

11. The crystal defect detection system according to claim 1, wherein: The photon energy of the excitation light beam is greater than the band gap of the semiconductor material of the semiconductor device, and the photon energy of the detection light beam is less than the band gap of the semiconductor material of the semiconductor device.

12. A control method for a crystal defect detection system, characterized in that: The control method is applied to the crystal defect detection system according to any one of claims 1 to 11, and the control method includes: Controlling the excitation module to emit an excitation light beam to a target area on the semiconductor device to excite the semiconductor device to generate carriers; Controlling the detection module to emit a detection beam toward the target area; controlling an image acquisition module to receive a first light beam emitted from the semiconductor device and to generate at least one detection signal based on the first light beam, the detection signal comprising a first signal generated based on a light wave generated by the excitation light beam and the detection light beam acting on the target area, and a second signal generated based on a light wave generated by the detection light beam acting on the target area; Controlling the data processing module to generate crystal defect information about the target area according to the first signal and the second signal of the detection signal; The data processing module generates image information according to the first signal and the second signal of the detection signal, and generates crystal defect information about the target area according to the image information.

13. A computer storage medium, characterized in that The computer storage medium stores computer program instructions, which, when executed by a processor, implement the control method of the crystal defect detection system according to claim 12.

14. A computer program product, characterized in that The computer program product includes computer program instructions, and when the computer program instructions are executed by a processor, the control method of the crystal defect detection system according to claim 12 is implemented.

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