Terahertz sensor for detecting trace brain glioma

Abstract

The invention provides a terahertz sensor for detecting trace brain glioma, which relates to the technical field of terahertz and is formed by splicing a plurality of sensing units, the sensing unit comprises a high-resistance silicon substrate layer, a metamaterial layer, a silicon dioxide dielectric layer, a microelectrode array layer and a hydrogel packaging layer; the high-resistance silicon substrate layer, the metamaterial layer, the silicon dioxide dielectric layer, the microelectrode array layer and the hydrogel packaging layer are sequentially arranged from bottom to top; the microelectrode array layer is any one of an ITO (Indium Tin Oxide) nano net or a gold nano net; the metamaterial layer comprises a cross-shaped layer and a star-shaped layer; the cross-shaped layer is arranged on the upper surface of the high-resistance silicon substrate layer, and the star-shaped layer is arranged on the lower surface of the silicon dioxide dielectric layer. According to the invention, the interference of a water-containing environment is solved, samples are gathered through the microelectrode array layer, and high-precision detection can be carried out on low-concentration samples.

Description

Technical Field

[0001] The present invention relates to the field of terahertz technology, and in particular to a terahertz sensor for detecting trace brain gliomas. Background Art

[0002] Glioma is a common intracranial tumor, accounting for approximately 40% to 60% of all primary brain tumors, and is a major threat to human health. Currently, gliomas are generally treated clinically with surgery, radiotherapy, and chemotherapy. However, due to their diffuse and locally infiltrative growth patterns, they are associated with high mortality, low cure rates, and a high recurrence rate. Therefore, accurate diagnosis of early-stage gliomas is crucial for selecting surgical options, postoperative treatment, and improving patient survival.

[0003] As a non-invasive material detection technology, terahertz spectroscopy detection technology has the characteristics of transientness, high penetration, broadband, coherence, and low energy. It can provide characteristic spectra of the internal structure and conformation of tissues and has been widely used in the diagnosis of brain gliomas.

[0004] Existing terahertz sensors are affected by factors such as water absorption interference, detection depth, and low sample concentration, resulting in unsatisfactory detection results. Summary of the Invention

[0005] The purpose of the present invention is to provide a terahertz sensor for detecting trace brain gliomas, which solves the interference of aqueous environments and aggregates samples through a microelectrode array layer, enabling high-precision detection of low-concentration samples.

[0006] A terahertz sensor for detecting trace brain gliomas is composed of several sensing units; the sensing unit includes a high-resistance silicon substrate layer, a metamaterial layer, a silicon dioxide dielectric layer, a microelectrode array layer, and a hydrogel encapsulation layer;

[0007] The high-resistance silicon base layer, the metamaterial layer, the silicon dioxide dielectric layer, the microelectrode array layer and the hydrogel encapsulation layer are arranged in sequence from bottom to top;

[0008] The microelectrode array layer is either an ITO nanomesh or a gold nanomesh;

[0009] The metamaterial layer includes a cross-shaped layer and a star-shaped layer; the cross-shaped layer is arranged on the upper surface of the high-resistance silicon base layer, and the star-shaped layer is arranged on the lower surface of the silicon dioxide dielectric layer.

[0010] Optionally, the resistivity of the high-resistance silicon base layer is greater than 10 kΩ·cm.

[0011] Optionally, the material of the hydrogel encapsulation layer is polyethylene glycol diacrylate.

[0012] Optionally, the transmittance of the microelectrode array layer is greater than 80%.

[0013] Optionally, the material of the ITO nanomesh is indium tin oxide.

[0014] Optionally, the star-shaped layer is obtained by iterating the Koch curve several times.

[0015] The effects of the present invention are as follows:

[0016] The terahertz sensor for detecting trace brain gliomas of the present invention simulates the water content environment of brain tissue through a hydrogel encapsulation layer, compensates for the phase distortion of terahertz waves in water-containing samples, isolates the interference between the metamaterial layer and the microelectrode array layer through a silicon dioxide dielectric layer, uses transparent electrodes to prevent the electrodes from blocking the metamaterial layer, and realizes a synergistic mechanism of dielectrophoretic force enrichment and metamaterial hotspot enhancement through the microelectrode array layer, breaking through the bottleneck of low-concentration sample detection. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 This is a structural diagram of a sensing unit of a terahertz sensor for detecting trace brain gliomas according to the present invention;

[0018] Figure 2 Schematic diagram of the cross-shaped layer structure of the present invention;

[0019] Figure 3 It is a schematic diagram of the star-shaped layer structure of the present invention.

[0020] In the figure: 1. High-resistance silicon base layer; 2. Metamaterial layer; 3. Silicon dioxide dielectric layer; 4. Microelectrode array layer; 5. Hydrogel encapsulation layer; 21. Cross-shaped layer. DETAILED DESCRIPTION

[0021] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.

[0022] The present invention provides a terahertz sensor for detecting micro-gliomas, which is composed of several sensing units. Figure 1 As shown, the sensing unit includes a high-resistance silicon substrate layer, a metamaterial layer, a silicon dioxide dielectric layer, a microelectrode array layer and a hydrogel encapsulation layer.

[0023] The high-resistance silicon substrate layer, metamaterial layer, silicon dioxide dielectric layer, microelectrode array layer, and hydrogel encapsulation layer are arranged sequentially from bottom to top. Preferably, the resistivity of the high-resistance silicon substrate layer is greater than 10 kΩ·cm, preferably 15 kΩ·cm. The hydrogel encapsulation layer is made of polyethylene glycol diacrylate. The hydrogel encapsulation layer can be loaded with an anti-protein adsorption coating to reduce signal drift caused by blood / tissue fluid contamination during surgery.

[0024] Specifically, the transmittance of the microelectrode array layer is greater than 80%, and it is preferably either an ITO nanomesh or a gold nanomesh. Furthermore, the material of the ITO nanomesh is indium tin oxide. The present invention enhances the local electric field through the microelectrode array layer, reduces the detection limit of the marker to the microgram level, and does not block the metamaterial layer. The frequency-adjustable electric field (1-10MHz) is used to guide glioma cells to gather in the sensing hotspot area, improving the signal-to-noise ratio by more than 50%.

[0025] The microelectrode array layer and the metamaterial layer are spatially aligned, so that the bioparticle-enriched area overlaps with the terahertz electric field hotspot, thereby improving the interaction cross section.

[0026] The metamaterial layer includes a cross-shaped layer and a star-shaped layer; the cross-shaped layer is arranged on the upper surface of the high-resistance silicon substrate layer, and the specific structure is as follows Figure 2 As shown, the star-shaped layer is arranged on the lower surface of the silicon dioxide dielectric layer. The star-shaped layer is an equilateral triangle and is obtained by performing Koch curve iteration several times, preferably 3 times. The specific structure is as follows Figure 3 shown.

[0027] Specifically, the thickness of the cross-shaped layer and the star-shaped layer is 200 μm, the thickness of the silicon dioxide dielectric layer is 500 μm, and the thickness of the hydrogel encapsulation layer is 20 μm.

[0028] Glioma cells were serially diluted to a concentration of 10 2 –10 6 cells / mL, and the linearity between the detection resonance peak frequency shift and concentration was >0.99.

[0029] In a solution containing 0.9% NaCl and 5g / L glucose, the signal-to-noise ratio was verified to be >35dB at a humidity of 40%.

[0030] When 10% fetal bovine serum was added to simulate intraoperative blood contamination, the signal attenuation rate was <15%, while that of traditional sensors was >60%.

[0031] The embodiments described above are merely descriptions of preferred implementations of the present invention and are not intended to limit the scope of the present invention. Without departing from the spirit of the present invention, various modifications and improvements made to the technical solutions of the present invention by ordinary technicians in this field should fall within the scope of protection determined by the claims of the present invention.

Claims

1. A terahertz sensor for detecting trace brain gliomas, characterized in that: It is composed of several sensing units; the sensing unit includes a high-resistance silicon base layer, a metamaterial layer, a silicon dioxide dielectric layer, a microelectrode array layer and a hydrogel encapsulation layer; The high-resistance silicon base layer, the metamaterial layer, the silicon dioxide dielectric layer, the microelectrode array layer and the hydrogel encapsulation layer are arranged in sequence from bottom to top; The microelectrode array layer is either an ITO nanomesh or a gold nanomesh; The metamaterial layer includes a cross-shaped layer and a star-shaped layer; the cross-shaped layer is arranged on the upper surface of the high-resistance silicon base layer, and the star-shaped layer is arranged on the lower surface of the silicon dioxide dielectric layer.

2. The terahertz sensor for detecting trace brain gliomas according to claim 1, characterized in that: The resistivity of the high-resistance silicon base layer is greater than 10 kΩ·cm.

3. The terahertz sensor for detecting trace brain gliomas according to claim 1, characterized in that: The material of the hydrogel encapsulation layer is polyethylene glycol diacrylate.

4. The terahertz sensor for detecting trace brain gliomas according to claim 1, characterized in that: The transmittance of the microelectrode array layer is greater than 80%.

5. The terahertz sensor for detecting trace brain gliomas according to claim 1, characterized in that: The material of the ITO nanomesh is indium tin oxide.

6. The terahertz sensor for detecting trace brain gliomas according to claim 1, characterized in that: The star-shaped layer is obtained by iterating the Koch curve several times.

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