Photovoltaic array of perovskite crystalline silicon laminated assembly

Abstract

The invention relates to a photovoltaic array of a perovskite crystalline silicon laminated assembly, the photovoltaic array comprises a plurality of photovoltaic assemblies, each photovoltaic assembly comprises a crystalline silicon cell layer and a perovskite cell layer which are sealed between a first transparent cover plate and a second transparent cover plate, the crystalline silicon cell layer is arranged on the light receiving side of the perovskite cell layer, and the crystalline silicon cell layer and the perovskite cell layer are electrically insulated and isolated from each other. The crystalline silicon cell layer and the perovskite cell layer are respectively provided with a positive electrode wiring terminal and a negative electrode wiring terminal, the crystalline silicon cell layer comprises a plurality of interconnected crystalline silicon solar cells, the perovskite cell layer comprises a perovskite cell, the perovskite cell layer is formed on the inner side of the second transparent cover plate by taking the second transparent cover plate as a substrate, and under a standard test condition, the perovskite cell layer is connected with the second transparent cover plate. When radiation irradiates the perovskite cell layer through the second transparent cover plate, the photoelectric conversion efficiency of the perovskite cell layer does not exceed 10%, and at least the crystalline silicon cell layers of the photovoltaic modules in the array are connected in series. The invention provides a scheme for improving the generating capacity of a photovoltaic array after serious attenuation of a perovskite cell.

Description

Technical Field

[0001] The present disclosure relates to the field of photovoltaic power generation, and in particular, to a photovoltaic array of a perovskite crystalline silicon stacked component. Background Art

[0002] Mechanically stacking perovskite solar cells and crystalline silicon solar cells at the module level creates a four-terminal (4T) perovskite-crystalline silicon stacked module with four terminals. Because the perovskite cell layer is closer to the sun than the crystalline silicon cell layer, the wide-bandgap perovskite cell can effectively utilize the short-wavelength solar spectrum, while the relatively narrow-bandgap crystalline silicon cell can utilize the long-wavelength solar spectrum that passes through the perovskite cell layer. The perovskite cell layer and the crystalline silicon cell layer of the 4T perovskite-crystalline silicon stacked module generate electricity independently, and the output current is combined for grid-connected or off-grid use.

[0003] Perovskite cells have a greater degradation rate than crystalline silicon solar cells in outdoor environments. Based on current technology, the service life of crystalline silicon solar cells is generally 25-30 years, while the service life of perovskite solar cells is usually around 5 years. The asynchronous degradation rate between perovskite cells and crystalline silicon cells means that when a perovskite solar cell is severely degraded, its contribution to the photovoltaic system's power generation is very small. Furthermore, the perovskite solar cell blocks the underlying crystalline silicon solar cell, preventing it from fully utilizing light. Summary of the Invention

[0004] The present disclosure provides a photovoltaic array of a perovskite crystalline silicon stacked module. In the case of severe attenuation of the perovskite solar cells, the perovskite solar cells eliminate the obstruction of the crystalline silicon solar cells by the perovskite solar cells, and improve the utilization rate of light by the crystalline silicon solar cells in the photovoltaic array, thereby increasing the overall power generation of the four-terminal perovskite crystalline silicon stacked module during its life cycle.

[0005] In order to achieve the above-mentioned objectives, the first aspect of the present disclosure provides a photovoltaic array of perovskite crystalline silicon stacked components, the photovoltaic array including multiple photovoltaic components, each photovoltaic component including a crystalline silicon cell layer and a perovskite cell layer sealed by a sealant between a first transparent cover plate and a second transparent cover plate, the crystalline silicon cell layer is arranged on the light-receiving side of the perovskite cell layer, the crystalline silicon cell layer and the perovskite cell layer are electrically insulated and isolated from each other, the crystalline silicon cell layer and the perovskite cell layer each have a positive terminal and a negative terminal, the crystalline silicon cell layer includes multiple interconnected crystalline silicon solar cells, the perovskite cell layer includes a perovskite cell, the perovskite cell layer is formed on the inner side of the second transparent cover plate with the second transparent cover plate as a substrate, under standard test conditions, when radiation passes through the second transparent cover plate side to irradiate the perovskite cell layer, the photoelectric conversion efficiency of the perovskite cell layer does not exceed 20%, and at least the crystalline silicon cell layers of each photovoltaic component of the array are connected in series with each other.

[0006] In some embodiments, under standard test conditions, the conversion efficiency of the perovskite cell layer does not exceed 15%, or does not exceed 10%, or does not exceed 5%, or does not exceed 3%.

[0007] In some embodiments, the surface of the first transparent cover plate has an anti-reflection layer, which can reduce the reflection of light on the surface of the first transparent cover plate, increase light transmittance, and improve the power generation of the module.

[0008] In some embodiments, a crystalline silicon solar cell includes: a single crystal silicon substrate having a first surface facing the sun during operation of the crystalline silicon solar cell and a second surface opposite to the first surface, the first surface including a first passivation contact region and a first non-passivation contact region outside the first passivation contact region; a first tunneling layer disposed in the first passivation contact region; a first doped polycrystalline silicon layer disposed on the first tunneling layer; an emitter disposed on the second surface and formed in the single crystal silicon substrate; a first passivation layer covering the first doped polycrystalline silicon layer and the first non-passivation contact region; a second passivation layer covering the emitter; a first electrode disposed in the first passivation contact region and conductively connected to the first doped polycrystalline silicon layer through an opening in the first passivation layer; and a second electrode conductively connected to the emitter through an opening in the second passivation layer; wherein the first doped polycrystalline silicon layer and the single crystal silicon substrate have the same conductivity type, and the emitter has an opposite conductivity type to the single crystal silicon substrate.

[0009] In some embodiments, a crystalline silicon solar cell includes: a monocrystalline silicon substrate having a first surface facing the sun during operation of the crystalline silicon solar cell and a second surface opposite to the first surface, the first surface including a first passivation contact region and a first non-passivation contact region outside the first passivation contact region, the second surface including a second passivation contact region and a second non-passivation contact region outside the second passivation contact region; a first tunneling layer disposed in the first passivation contact region; a first doped polysilicon layer disposed on the first tunneling layer; a second tunneling layer disposed in the second passivation contact region; a second doped polysilicon layer disposed on the second tunneling layer; The invention relates to a method for manufacturing a monocrystalline silicon substrate comprising: a first passivation layer covering the doped polysilicon layer and the first non-passivation contact region; a second passivation layer covering the second doped polysilicon layer and the second non-passivation contact region; a first electrode disposed in the first passivation contact region and conductively connected to the doped polysilicon layer through an opening in the first passivation layer; and a second electrode disposed in the second passivation contact region and conductively connected to the second doped polysilicon layer through an opening in the second passivation layer; wherein the first doped polysilicon layer and the single crystal silicon substrate have the same conductivity type, and the second doped polysilicon layer and the single crystal silicon substrate have opposite conductivity types.

[0010] In some embodiments, a crystalline silicon solar cell includes a single crystal silicon substrate, the single crystal silicon substrate having a first surface facing the sun during operation of the crystalline silicon solar cell and a second surface opposite to the first surface, the first surface being sequentially provided with a first intrinsic amorphous silicon layer, a first doped amorphous silicon layer and a first transparent conductive layer, the second surface being sequentially provided with a second intrinsic amorphous silicon layer, a second doped amorphous silicon layer and a second transparent conductive layer, a first collecting electrode being provided on the first transparent conductive layer, a second collecting electrode being provided on the second transparent conductive layer, and the first doped amorphous silicon layer and the second doped amorphous silicon layer having opposite conductivity types.

[0011] In some embodiments, the photovoltaic module includes a frame, and the cross section of the frame is C-shaped or L-shaped.

[0012] In some embodiments, the perovskite cell layers of the individual photovoltaic modules of the array are also connected in series.

[0013] When the photoelectric conversion efficiency of the perovskite cell layer is high, the stacked assembly can be configured so that the perovskite cell layer is located on the light-receiving side of the crystalline silicon cell layer. At this stage, the photovoltaic assembly has a high power generation capacity. When the photoelectric conversion efficiency of the perovskite cell layer is severely attenuated, for example, when the photoelectric conversion efficiency of the perovskite cell layer does not exceed 10%, the stacked assembly can be configured so that the crystalline silicon cell layer faces the sun. This prevents the perovskite cell layer, which contributes little to the power generation of the photovoltaic array, from shading the crystalline silicon cell layer. In this way, during the subsequent longer outdoor operation time of the four-terminal perovskite crystalline silicon stacked assembly, the crystalline silicon cell layer can receive more light. The increased power generation of the crystalline silicon cell layer compensates for the power generation loss caused by the attenuation of the perovskite cell layer to a certain extent, thereby improving the long-term power generation income of the photovoltaic array.

[0014] Other features and advantages of the present disclosure will be described in detail in the following detailed description. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] The accompanying drawings are used to provide a further understanding of the present disclosure and constitute a part of the specification. Together with the following detailed description, they are used to explain the present disclosure but do not constitute a limitation of the present disclosure. In the accompanying drawings:

[0016] Figure 1 A schematic diagram of a photovoltaic array of a perovskite crystalline silicon stacked assembly in some embodiments of the present disclosure is shown.

[0017] Figure 2 A schematic backside view of a perovskite crystalline silicon stack assembly in some embodiments of the present disclosure is shown.

[0018] Figure 3 A perovskite crystalline silicon stacked component in a reverse working mode in some embodiments of the present disclosure is shown.

[0019] Figure 4A perovskite crystalline silicon stacked component in a forward working mode in some embodiments of the present disclosure is shown.

[0020] Figure 5 The crystalline silicon solar cell in the reverse working mode in some other embodiments of the present disclosure is shown.

[0021] Figure 6 The crystalline silicon solar cell in the reverse working mode in some other embodiments of the present disclosure is shown.

[0022] Figure 7 The crystalline silicon solar cell in the reverse working mode in some other embodiments of the present disclosure is shown. DETAILED DESCRIPTION

[0023] The following describes the specific embodiments of the present disclosure in detail with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are only used to illustrate and explain the present disclosure and are not intended to limit the present disclosure.

[0024] In this disclosure, unless otherwise stated, directional words such as "upper" and "lower" generally refer to the upper and lower positions of a device in normal use. Figure 1 In the drawing orientation, "inside" and "outside" refer to the device outline. Furthermore, the terms "first, second, third, and fourth" are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of the technical features indicated. Therefore, features specified as "first, second, third, and fourth" may explicitly or implicitly include one or more of the features. In the description of this disclosure, "plurality" means two or more, unless otherwise specifically defined.

[0025] Please refer to Figures 1 to 3 The photovoltaic array of the perovskite crystalline silicon stacked module includes multiple photovoltaic modules 1. Each photovoltaic module 1 includes a crystalline silicon cell layer 2 and a perovskite cell layer 3 sealed between a first transparent cover plate 4 and a second transparent cover plate 5 by a sealant 6. The crystalline silicon cell layer 2 is arranged on the light-receiving side 7 of the perovskite cell layer 3. The crystalline silicon cell layer 2 and the perovskite cell layer 3 are electrically insulated from each other. The crystalline silicon cell layer 2 and the perovskite cell layer 3 each have a positive terminal and a negative terminal. The crystalline silicon cell layer 2 includes multiple interconnected crystalline silicon solar cells 11. The perovskite cell layer 3 includes perovskite cells. The perovskite cell layer 3 is formed on the inner side of the second transparent cover plate 5 with the second transparent cover plate 5 as a substrate. Under standard test conditions, when radiation passes through the second transparent cover plate 5 to illuminate the perovskite cell layer 3, the photoelectric conversion efficiency of the perovskite cell layer 3 does not exceed 20%. At least the crystalline silicon cell layers 2 of each photovoltaic module 1 in the array are connected in series.

[0026] When the photoelectric conversion efficiency of the perovskite cell layer 3 is high, the photovoltaic module 1 can be configured so that the perovskite cell layer 3 is located on the light-receiving side of the crystalline silicon cell layer 2, that is, the perovskite cell layer 3 is closer to the sun than the crystalline silicon cell layer 2. This disclosure refers to this as the forward working mode of the photovoltaic module 1. Figure 4 As shown, the dotted line with an arrow indicates the direction of sunlight. At this stage, due to the high conversion efficiency of the perovskite cell layer 3, the photovoltaic module 1 can still play its stacking advantages.

[0027] However, when the photoelectric conversion efficiency of the perovskite cell layer is severely attenuated, such as when the photoelectric conversion efficiency of the perovskite cell layer does not exceed 20%, the photovoltaic module 1 can be configured so that the crystalline silicon cell layer 2 is located on the light-receiving side of the perovskite cell layer 3, that is, the crystalline silicon cell layer 2 is closer to the sun than the perovskite cell layer 3. This is referred to as the reverse working mode of the photovoltaic module 1. Figure 3 As shown, the dotted arrow indicates the direction of sunlight. This reverse operating mode prevents the perovskite cell layer 3, which contributes little to the photovoltaic array's power generation, from blocking the crystalline silicon cell layer 2. This allows the crystalline silicon cell layer 2 to receive more sunlight over a longer operating time. The increased power generation from the crystalline silicon cell layer 2 offsets the power loss caused by the attenuation band of the perovskite cell layer 3, improving the long-term power generation revenue of the photovoltaic array.

[0028] Photovoltaic array photovoltaic components 1 from Figure 4 The forward operating mode shown becomes Figure 3 The reverse working mode shown can be achieved by turning the photovoltaic module 1 by 180°, in which case the crystalline silicon solar cell 11 will also be turned by 180°.

[0029] Please refer to Figure 1 The photovoltaic array has a plurality of photovoltaic modules 1, which are connected in series. Figure 2 Each photovoltaic module 1 has four terminals. The crystalline silicon cell layer 2 and the perovskite cell layer 3 each have a positive terminal and a negative terminal. For example, the crystalline silicon cell layer 2 has a first positive terminal 101 and a first negative terminal 102, and the perovskite cell layer 3 has a second positive terminal 101 and a second negative terminal 104. At least the crystalline silicon cell layers 2 of each photovoltaic module 1 in the array are connected in series, that is, the crystalline silicon cell layers 2 of each photovoltaic module 1 in the photovoltaic array are connected in series. Whether the perovskite cell layers 3 of each photovoltaic module 1 are interconnected can depend on the power generation capacity of the perovskite cell layer 3. If the power generated by the perovskite cell layer 3 is still worth collecting, the perovskite cell layers 3 can be interconnected. If the perovskite cell layer 3 has degraded so much that the power generated is no longer worth collecting and utilizing, the perovskite cell layers 3 of each photovoltaic module 1 can be disconnected.

[0030] The standard test conditions (STC) are a light intensity of 1000W / m 2 , temperature is 25±2℃, AM1.5 standard spectrum conditions. Figure 4 In the forward operating mode shown, the photoelectric conversion efficiency of the perovskite cell layer 3 of the photovoltaic module 1 is tested under standard test conditions. During the test, only the positive and negative terminals of the perovskite cell layer 3 are connected to the test equipment.

[0031] The crystalline silicon cell layer 2 and the perovskite cell layer 3 are electrically insulated from each other, which can prevent leakage and short circuit between the crystalline silicon cell layer 2 and the perovskite cell layer 3. For example, the encapsulant 6 can be used to electrically insulate the crystalline silicon cell layer 2 and the perovskite cell layer 3 from each other.

[0032] In some examples, the conversion efficiency of the perovskite cell layer does not exceed 15% under standard testing conditions.

[0033] In some examples, the conversion efficiency of the perovskite cell layer does not exceed 10% under standard testing conditions.

[0034] In some examples, the conversion efficiency of the perovskite cell layer does not exceed 5% under standard testing conditions.

[0035] The first transparent cover plate 4 and the second transparent cover plate 5 are configured to be optically transparent. Preferably, the first transparent cover plate 4 and the second transparent cover plate 5 are glass plates. In the forward working mode, light can illuminate the perovskite cell layer 3 and the crystalline silicon cell layer 2 through the second transparent cover plate 5. Figure 4 The forward operating mode shown converts Figure 3 After the reverse working mode shown, sunlight can pass through the first transparent cover plate 4 and irradiate the crystalline silicon cell layer 2 .

[0036] The crystalline silicon cell layer 2 includes multiple crystalline silicon solar cells 11, which are connected in series and / or in parallel within the module. The perovskite cell layer 3 uses the second transparent cover plate 5 as a substrate and is formed on the inner side of the second transparent cover plate 5, that is, the surface of the second transparent cover plate 5 opposite the first transparent cover plate 4. The perovskite cell layer 3 includes multiple sub-cells, which can be connected in series and / or in parallel within the module.

[0037] In some examples, the surface of the first transparent cover plate 4 has an anti-reflection layer. The anti-reflection layer can increase the transmittance of sunlight. Preferably, both the first transparent cover plate 4 and the second transparent cover plate 5 have anti-reflection layers. This increases the amount of light projected onto the light-absorbing layer of the photovoltaic module 1 in both forward and reverse operating modes.

[0038] The sealant 6 wraps around the crystalline silicon cell layer 2 and covers the perovskite cell layer 3 to protect the crystalline silicon cells and perovskite cells from being attacked by harmful substances such as water and air. The sealant 6 may include a first sealant and a second sealant. The first sealant is disposed between the crystalline silicon cell layer 2 and the perovskite cell layer 3, and the second sealant is disposed between the crystalline silicon cell layer 3 and the first transparent cover plate 4. The first sealant seals the perovskite cell layer 3 on the inside of the second transparent cover plate 5. The first sealant and the second sealant fuse together to wrap the crystalline silicon cell layer 2.

[0039] Furthermore, the water vapor permeability of the first sealant is lower than that of the second sealant. Since the perovskite material is sensitive to water vapor, the first sealant can be made of a material with a low water vapor permeability to reduce the risk of water vapor erosion of the perovskite cell layer 3. The second sealant can be made of a material with a relatively high water vapor permeability to take into account the cost of the sealant material. For example, the first sealant can be made of a polyolefin elastomer (POE), EPE film (EVA-POE-EVA co-extruded structure) or EP film (EVA-EP co-extruded structure) with a low water vapor permeability, and the second sealant 62 can be one of the materials such as ethylene-vinyl acetate copolymer (EVA) or polyvinyl butyral (PVB).

[0040] Of course, the second sealant can also be polyolefin elastomer (POE), EPE film (EVA-POE-EVA co-extruded structure), EP film (EVA-EP co-extruded structure), EPE film (EVA-POE-EVA co-extruded structure) or EP film (EVA-EP co-extruded structure).

[0041] Figure 5 FIG. 1 shows a crystalline silicon solar cell in a reverse working mode of a photovoltaic module 1. Figure 5 As shown, in some examples, a crystalline silicon solar cell 11 includes a single crystal silicon substrate 12, a first tunneling layer 15, a first doped polysilicon layer 16, an emitter 17, a first passivation layer 18, a second passivation layer 19, a first electrode 20, and a second electrode 21. The first doped polysilicon layer 16 and the single crystal silicon substrate have the same conductivity type, and the emitter 17 has a conductivity type opposite to that of the single crystal silicon substrate 12.

[0042] For example, the single crystal silicon substrate 12 can be an n-type silicon substrate, the emitter 17 can be p-type, and the first doped polysilicon layer 16 is an n-type doped polysilicon layer. Therefore, the single crystal silicon substrate 12 and the emitter 17 form a pn junction, and the first doped polysilicon layer 16 has a field passivation effect. Of course, the single crystal silicon substrate 12 and the first doped polysilicon layer 16 can be p-type, while the emitter 17 can be n-type. N-type conductivity can be achieved by doping a semiconductor material with a pentavalent element such as phosphorus, arsenic, or antimony, while p-type conductivity can be achieved by doping a semiconductor material with a trivalent element such as boron or aluminum.

[0043] The monocrystalline silicon substrate 12 has a first surface 13 that faces the sun during operation of the crystalline silicon solar cell 11, and a second surface 14 opposite the first surface 13. The first surface 13 includes a first passivation contact region I and a first non-passivation contact region II outside the first passivation contact region I. The first passivation contact region I is provided with a passivation contact structure that can reduce carrier recombination in the metal-semiconductor contact region.

[0044] Specifically, the first passivation contact region I comprises a first tunneling layer 15, on which a first doped polysilicon layer 16 is disposed. A first electrode 20 is disposed in the first passivation contact region I and is in conductive contact with the first doped polysilicon layer 16. The first tunneling layer 15 is selective in its carrier permeability, allowing electrons to pass through while blocking holes, thereby reducing carrier recombination at the contact interface. The thickness of the first tunneling layer 15 can range from 0.5 to 2.5 nm. The first tunneling layer 15 can be made of silicon dioxide, silicon nitride, or intrinsic amorphous silicon.

[0045] A first passivation layer 18 is provided on the first doped polysilicon layer 16 and on the first non-passivation contact region II. The first electrode 20 is conductively connected to the first doped polysilicon layer 16 through an opening in the first passivation layer 18. The first passivation layer 18 can passivate the semiconductor, reducing carrier recombination on the semiconductor surface. Furthermore, the first passivation layer 18 can reduce light reflection and increase solar radiation entering the semiconductor. For example, the single crystal silicon substrate 12 is an n-type silicon substrate, the emitter 17 has p-type conductivity, the first passivation layer 18 comprises silicon nitride, and the second passivation layer 19 comprises a stack of aluminum oxide and silicon nitride.

[0046] Emitter 17 is disposed on second surface 14 and formed within single crystal silicon substrate 12. Emitter 17 is obtained by doping the surface layer of semiconductor substrate 12 with an element having a conductivity type opposite to that of semiconductor substrate 12. A second passivation layer 19 overlies emitter 17, and a second electrode 21 is conductively connected to emitter 17 through an opening in second passivation layer 19.

[0047] In reverse working mode, Figure 5The crystalline silicon solar cell 11 of the illustrated structure has its emitter 17 located on the side facing the sun, and the passivation contact structure on the side facing away from the sun. When the photovoltaic module 1 is switched from forward operating mode to reverse operating mode, the emitter 17 of the crystalline silicon solar cell 11 is located on the side facing away from the sun, i.e., the pn junction is on the back side, and the passivation contact structure is located on the side facing the sun. Providing a passivation contact structure partially on the first surface 13 can reduce parasitic absorption in the doped polysilicon layer during reverse operating mode.

[0048] like Figure 6 As shown, in some examples, the second side 14 of the single-crystalline silicon substrate 12 of the crystalline silicon solar cell 11 is also provided with a passivation contact structure. The second side 14 of the single-crystalline silicon substrate 12 includes a second passivation contact region III and a second non-passivation contact region IV outside the second passivation contact region III. A passivation structure is provided in the second passivation contact region III. The first doped polysilicon layer 16 has the same conductivity type as the single-crystalline silicon substrate 12, while the second doped polysilicon layer 23 has an opposite conductivity type to the single-crystalline silicon substrate 12. Specifically, the second passivation contact region III includes a second tunneling layer 22, a second doped polysilicon layer 23 is provided on the second tunneling layer 22, and a second passivation layer 19 is provided on the second doped polysilicon layer 23 and the second non-passivation contact region IV. The thickness of the first tunneling layer 15 can be 0.5-2.5 nm. The first tunneling layer 15 can be silicon dioxide, silicon nitride, or intrinsic amorphous silicon. In the second passivation contact region III, the second electrode 21 is conductively connected to the second doped polysilicon layer 23 through the opening in the second passivation layer 19. In these embodiments, both sides of the crystalline silicon solar cell 11 have passivation contact structures, and the passivation contact structures are only locally provided. This ensures good passivation effect on both sides of the cell, regardless of whether the photovoltaic module 1 is operating in forward or reverse mode, and avoids parasitic absorption problems caused by excessively large doped polysilicon layers.

[0049] like Figure 7 As shown, in some examples, a crystalline silicon solar cell 11 includes a single-crystal silicon substrate 11 having a first surface 13 facing the sun during operation of the crystalline silicon solar cell 11 and a second surface 14 opposite the first surface 13. The first surface 13 is sequentially provided with a first intrinsic amorphous silicon layer 24, a first doped amorphous silicon layer 25, and a first transparent conductive layer 26. The second surface 14 is sequentially provided with a second intrinsic amorphous silicon layer 27, a second doped amorphous silicon layer 28, and a second transparent conductive layer 29. A first collecting electrode 30 is provided on the first transparent conductive layer 26, and a second collecting electrode 31 is provided on the second transparent conductive layer 29. The first doped amorphous silicon layer 25 and the second doped amorphous silicon layer 28 have opposite conductivity types. In these embodiments, the crystalline silicon solar cell 11 is a heterojunction cell.

[0050] In some variant examples, Figure 5The passivation contact structure of the crystalline silicon solar cell 1 shown may cover the entire first surface 13 .

[0051] In some variant examples, Figure 6 The single-sided and / or double-sided passivation contact structure of the crystalline silicon solar cell 1 shown may cover the entire surface.

[0052] In some examples, both sides of the crystalline silicon solar cell 11 have a textured structure. The textured structure can be a positive pyramid-shaped velvet structure, an inverted pyramid-shaped velvet structure, a pyramid-shaped velvet structure with a flattened top, or a wormhole-shaped velvet structure. The textured structure has a light-trapping effect, reducing the reflection of light from the surface of the crystalline silicon solar cell 11. The textured structure on both sides of the crystalline silicon solar cell 11 ensures that the sun-facing side of the crystalline silicon solar cell 11 has a light-trapping effect regardless of whether the photovoltaic module 1 is operating in the forward or reverse mode.

[0053] In some examples, the photovoltaic assembly 1 includes a frame 9, and the cross section of the frame 9 is C-shaped (eg Figure 3 Or 4) or L-shaped. The C-shaped or L-shaped frame is coated around the composite layer structure composed of the first transparent cover plate 4, the second transparent cover plate 5, the encapsulant 6, the crystalline silicon cell layer 2, and the perovskite cell layer 3, and is bonded by the edge sealing glue 10. The traditional aluminum frame has a large thickness due to the corner code cavity. Therefore, after the traditional photovoltaic module is turned over, the frame will be significantly higher than the surface of the photovoltaic module, causing serious dust accumulation on the surface of the photovoltaic module in the reverse working mode. Since the cross-section of the frame of the photovoltaic module 1 is C-shaped or L-shaped, the corner code cavity is cancelled, and the height difference between the frame 9 and the first transparent cover plate 4 and the second transparent cover plate 5 is very small, which can prevent dust from accumulating on the surface of the photovoltaic module when the photovoltaic module 1 is configured from the forward working mode to the reverse working mode.

[0054] The preferred embodiments of the present disclosure are described in detail above in conjunction with the accompanying drawings. However, the present disclosure is not limited to the specific details of the above embodiments. Within the technical concept of the present disclosure, various simple modifications can be made to the technical solutions of the present disclosure, and these simple modifications all fall within the scope of protection of the present disclosure.

[0055] It should also be noted that the various specific technical features described in the above specific embodiments can be combined in any suitable manner without contradiction. To avoid unnecessary repetition, the present disclosure will not further describe various possible combinations.

[0056] In addition, the various embodiments of the present disclosure may be arbitrarily combined, and as long as they do not violate the concept of the present disclosure, they should also be regarded as the contents disclosed by the present disclosure.

Claims

1. A photovoltaic array of a perovskite crystalline silicon stacked component, characterized in that: The invention comprises a plurality of photovoltaic modules, each of which comprises a crystalline silicon cell layer and a perovskite cell layer sealed between a first transparent cover plate and a second transparent cover plate by a sealant, the crystalline silicon cell layer being arranged on the light-receiving side of the perovskite cell layer, the crystalline silicon cell layer and the perovskite cell layer being electrically insulated and isolated from each other, the crystalline silicon cell layer and the perovskite cell layer each having a positive electrode terminal and a negative electrode terminal, the crystalline silicon cell layer comprising a plurality of interconnected crystalline silicon solar cells, the perovskite cell layer comprising a perovskite cell, the perovskite cell layer being formed on the inner side of the second transparent cover plate with the second transparent cover plate as a substrate, under standard test conditions, when radiation passes through the second transparent cover plate side to irradiate the perovskite cell layer, the photoelectric conversion efficiency of the perovskite cell layer does not exceed 20%, and at least the crystalline silicon cell layers of each of the photovoltaic modules in the array are connected in series with each other.

2. The photovoltaic array of the perovskite crystalline silicon stacked component according to claim 1, characterized in that: Under standard test conditions, the conversion efficiency of the perovskite cell layer does not exceed 15%, or does not exceed 10%, or does not exceed 5%, or does not exceed 3%.

3. The photovoltaic array of the perovskite crystalline silicon stacked assembly according to claim 1, characterized in that: The surface of the first transparent cover plate has an anti-reflection layer.

4. The photovoltaic array of the perovskite crystalline silicon stacked assembly according to claim 1, characterized in that: The crystalline silicon solar cell comprises: a monocrystalline silicon substrate having a first surface facing the sun during operation of the crystalline silicon solar cell and a second surface opposite to the first surface, wherein the first surface includes a first passivation contact region and a first non-passivation contact region outside the first passivation contact region; a first tunneling layer, disposed in the first passivation contact region; a first doped polysilicon layer, disposed on the first tunneling layer; an emitter, disposed on the second surface and formed in the single crystal silicon substrate; a first passivation layer covering the first doped polysilicon layer and the first non-passivation contact area; a second passivation layer covering the emitter; a first electrode, disposed in the first passivation contact region and conductively connected to the first doped polysilicon layer through the opening of the first passivation layer; and a second electrode, conductively connected to the emitter through the opening of the second passivation layer; The first doped polysilicon layer and the single crystal silicon substrate have the same conductivity type, and the emitter has an opposite conductivity type to that of the single crystal silicon substrate.

5. The photovoltaic array of the perovskite crystalline silicon stacked component according to claim 1, characterized in that: The crystalline silicon solar cell comprises: A single crystal silicon substrate having a first surface facing the sun during operation of the crystalline silicon solar cell and a second surface opposite to the first surface, wherein the first surface includes a first passivation contact region and a first non-passivation contact region outside the first passivation contact region, and the second surface includes a second passivation contact region and a second non-passivation contact region outside the second passivation contact region; a first tunneling layer, disposed in the first passivation contact region; a first doped polysilicon layer, disposed on the first tunneling layer; a second tunneling layer, disposed in the second passivation contact region; a second doped polysilicon layer, disposed on the second tunneling layer; a first passivation layer covering the doped polysilicon layer and the first non-passivation contact area; a second passivation layer covering the second doped polysilicon layer and the second non-passivation contact region; a first electrode, disposed in the first passivation contact region and conductively connected to the doped polysilicon layer through the opening of the first passivation layer; and a second electrode, disposed in the second passivation contact region and conductively connected to the second doped polysilicon layer through the opening of the second passivation layer; The first doped polysilicon layer and the single crystal silicon substrate have the same conductivity type, and the second doped polysilicon layer and the single crystal silicon substrate have opposite conductivity types.

6. The photovoltaic array of the perovskite crystalline silicon stacked assembly according to claim 1, characterized in that: The crystalline silicon solar cell includes a single-crystal silicon substrate, which has a first surface facing the sun during operation of the crystalline silicon solar cell and a second surface opposite to the first surface. The first surface is provided with a first intrinsic amorphous silicon layer, a first doped amorphous silicon layer and a first transparent conductive layer in sequence, and the second surface is provided with a second intrinsic amorphous silicon layer, a second doped amorphous silicon layer and a second transparent conductive layer in sequence. A first collecting electrode is provided on the first transparent conductive layer, and a second collecting electrode is provided on the second transparent conductive layer. The first doped amorphous silicon layer and the second doped amorphous silicon layer have opposite conductivity types.

7. The photovoltaic array of the perovskite crystalline silicon stacked assembly according to claim 1, characterized in that: The photovoltaic assembly includes a frame, and the cross section of the frame is C-shaped or L-shaped.

8. The photovoltaic array of the perovskite crystalline silicon stacked assembly according to claim 1, characterized in that: The perovskite cell layers of each photovoltaic module of the array are also connected in series.

9. The photovoltaic array of the perovskite crystalline silicon stacked assembly according to claim 1, characterized in that: Both sides of each crystalline silicon solar cell have a textured structure.

10. The photovoltaic array of the perovskite crystalline silicon stacked assembly according to claim 1, characterized in that: The surface of the first transparent cover plate has an anti-reflection layer.

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