A remote plasma source apparatus for thin film deposition

Abstract

The application relates to the technical field of material surface treatment technology, and discloses a remote plasma source device for thin film deposition, which comprises a plasma generation cavity, a PECVD process cavity and a microwave magnetron, the PECVD process cavity is connected below the plasma generation cavity, the microwave magnetron is arranged outside the plasma generation cavity, and a splash-proof heat dissipation assembly is arranged outside the plasma generation cavity; the device is designed with a layered plasma generation cavity, so that the stability of plasma parameters is ensured, the aluminum alloy outer cavity not only provides stable mechanical support, but also can quickly lead out the heat of the inner cavity, and the plasma parameter drift caused by excessively high temperature is avoided; the processing cavity made of ceramic material has extremely strong plasma corrosion and sputtering resistance, metal particle pollution is prevented from the root, and the thin film purity is obviously improved; in addition, the flexible graphite foil is arranged, and the expansion difference between the ceramic processing cavity and the aluminum alloy outer cavity is absorbed through elastic deformation.

Description

Technical Field

[0001] This invention relates to the field of material surface treatment technology, and more specifically to a remote plasma source device for thin film deposition. Background Technology

[0002] A remote plasma source device for thin film deposition is a device used to generate and transport plasma during the thin film preparation process. Its core feature is that the plasma generation region is separated from the reaction region of thin film deposition.

[0003] The plasma source devices on the market have a limited selection of cavity materials, or the metal outer cavity is in direct contact with the internal plasma confinement components, lacking a suitable buffer structure. This makes the metal susceptible to corrosion by plasma sputtering, and the resulting metal particles are mixed into the plasma, directly contaminating the deposited film and reducing its purity. At the same time, the difference in thermal expansion coefficients between the metal cavity and high-temperature resistant components such as ceramics has not been effectively mitigated. During long-term high-temperature operation, the cavity is prone to cracking due to thermal stress, or local hot spots may form due to poor contact, causing plasma parameter drift and affecting the consistency of film deposition.

[0004] In addition, the heat dissipation structure of plasma source devices on the market is simple, mostly relying on a single air cooling or water cooling method. They lack enhanced heat dissipation mechanisms such as airflow acceleration and eddy current heat transfer, which makes it difficult to quickly dissipate heat from the cavity. Especially when operating at high power, the cavity temperature is prone to continuous rise, accelerating component aging and even causing malfunctions such as plasma extinction, thus shortening the overall service life of the equipment. At the same time, there is no dedicated condensation treatment component. When the low-temperature heat dissipation airflow comes into contact with the high-temperature surface of the cavity, water vapor in the air is easy to condense into water droplets. If these droplets fall on the internal circuits or precision components of the equipment, they can easily cause short circuits, corrosion, and other problems, seriously affecting the stability and reliability of the equipment operation and increasing maintenance frequency and costs.

[0005] During the transport of plasma active species from the plasma generation chamber to the process chamber, the lack of effective airflow disturbance and uniform distribution structure leads to local aggregation or recombination loss of active species during transport, resulting in uneven distribution upon arrival at the substrate surface. This directly causes differences in film thickness and composition, affecting the stability of product quality, especially the uniformity of large-area substrate deposition. Furthermore, the connection between the plasma generation chamber and the process chamber often uses traditional methods such as bolt fixing, requiring various tools for disassembly and disassembly, and necessitating the removal of multiple connectors one by one. This cumbersome and time-consuming operation significantly extends equipment downtime, reduces production efficiency, and increases labor costs when frequent cleaning of the chamber, substrate replacement, or internal component repair is required.

[0006] Therefore, there is a need to provide a remote plasma source device for thin film deposition, which aims to solve the above-mentioned problems. Summary of the Invention

[0007] In view of the shortcomings of the existing technology, the purpose of this invention is to provide a remote plasma source device for thin film deposition.

[0008] To achieve the above objectives, the present invention provides the following technical solution: a remote plasma source device for thin film deposition, comprising a plasma generation chamber, a PECVD process chamber and a microwave magnetron, wherein the PECVD process chamber is connected to the lower part of the plasma generation chamber, the microwave magnetron is disposed on the outside of the plasma generation chamber, and a splash-proof heat dissipation component is disposed on the outside of the plasma generation chamber.

[0009] The splash-proof heat dissipation assembly includes a processing chamber located inside a plasma generating chamber. An annular gasket is fitted onto the outer side of the processing chamber, and an arc-shaped block is fitted onto the outer side of the plasma generating chamber. A connecting block is fixedly connected to the top of the arc-shaped block. A cooling tube is installed inside the connecting block, and a distance-extending ring is fitted onto the outer side of the cooling tube. A sealing block is fitted onto the outer side of the distance-extending ring. An inclined hole is formed in an annular shape on the outer wall of the cooling tube, and an air-blocking plug is snapped onto the top of the cooling tube.

[0010] Preferably, the splash-proof heat dissipation assembly further includes a positioning rod group, which is fixedly connected to the outer wall of the plasma generating chamber, and the end of the positioning rod group away from the plasma generating chamber is fixedly connected to the arc-shaped block. The side of the connecting block away from the arc-shaped block is fixedly connected to the outer wall of the plasma generating chamber, and an air pump is provided inside the connecting block.

[0011] Preferably, the splash-proof heat dissipation assembly further includes a curved tube, which is disposed inside the arc-shaped block. A water-cooling pipe is disposed inside the curved tube, and a positioning block assembly is sleeved on the outer wall of the water-cooling pipe. The outer wall of the positioning block assembly is fixedly connected to the curved tube, and the curved tube is connected to the bottom of the cooling pipe.

[0012] Preferably, the arc-shaped block is provided with a decondensation removal component, which includes a decondensation collection chamber. The decondensation collection chamber is fixedly connected to the side of the arc-shaped block near the plasma generation chamber. An acceleration tube is snapped into the inside of the decondensation collection chamber, and an acceleration block is provided inside the acceleration tube. A threaded groove is provided at the bottom of the decondensation collection chamber, and a spiral collection bottle is threadedly connected to the decondensation collection chamber through the threaded groove at the bottom. The bottom of the inner cavity of the decondensation collection chamber is set in an inclined shape.

[0013] Preferably, a stirring assembly is provided at the bottom of the inner cavity of the plasma generating chamber. The stirring assembly includes a positioning frame, which is fixedly connected to the bottom of the inner cavity of the plasma generating chamber. A fan-shaped rod is rotatably connected inside the positioning frame.

[0014] Preferably, the plasma generating chamber and the PECVD process chamber are provided with a quick-release assembly. The quick-release assembly includes eight hollow positioning blocks, which are arranged in a ring and slidably connected to the bottom of the plasma generating chamber. Each hollow positioning block has a pressing rod slidably connected inside, and each pressing rod has a platform-shaped limiting block fixedly connected to its bottom. Each pressing rod has a return spring sleeved on its outer wall. One end of the return spring is fixedly connected to the hollow positioning block, and the other end of the return spring is fixedly connected to the pressing rod.

[0015] Preferably, the quick-assembly assembly further includes sixteen limiting beads, with each pair of limiting beads forming a group, and each group of limiting beads is disposed between the platform-shaped limiting block and the hollow positioning block. The bottom of the hollow positioning block is symmetrically provided with arc-shaped grooves, and the top of the PECVD process cavity is fixedly connected to eight convex limiting blocks in a ring shape. Each of the eight convex limiting blocks corresponds to eight pressing rods, and the top of the inner cavity of each convex limiting block is provided as a slope.

[0016] Preferably, the outer cavity of the plasma generating chamber is made of aluminum alloy, the processing chamber is made of ceramic, and the annular gasket is made of flexible graphite foil. The annular gasket is embedded between the ceramic processing chamber and the aluminum alloy outer cavity of the plasma generating chamber.

[0017] Preferably, the cooling tube, the spacing ring, and the sealing block are all disposed inside the connecting block, and the sealing block is connected to the air outlet of the air pump through the internal groove of the connecting block.

[0018] The present invention provides a remote plasma source device for thin film deposition. Compared with the prior art, the advantages of the present invention are:

[0019] The device utilizes a layered plasma generation chamber to ensure stable plasma parameters. The aluminum alloy outer chamber not only provides robust mechanical support but also rapidly dissipates heat from the inner chamber, preventing plasma parameter drift caused by excessive temperature. The ceramic processing chamber exhibits strong resistance to plasma corrosion and sputtering, preventing metal particle contamination at its source and significantly improving film purity.

[0020] Furthermore, the flexible graphite foil absorbs the expansion difference between the ceramic processing cavity and the aluminum alloy outer cavity through elastic deformation, and also distributes heat flow evenly with high lateral thermal conductivity, avoiding local overheating and cracking of the ceramic. At the same time, it fills the microscopic unevenness of the surface to reduce contact thermal resistance, ensuring the long-term stability of the cavity structure and providing a reliable environment for the continuous and stable generation of plasma.

[0021] By incorporating cooling pipes, inclined holes, airlock plugs, and an air pump, heat dissipation efficiency is improved. The air drawn in by the air pump forms a spiral vortex through the cooling pipes, achieving rapid cooling by utilizing the energy exchange between the inner and outer airflow layers. Simultaneously, in conjunction with the water-cooling pipes inside the curved tubes, the airflow temperature is further reduced through the temperature difference of the low-temperature medium, enabling the cooled air to efficiently carry away the heat from the plasma generation chamber.

[0022] Meanwhile, the combination of the speed-increasing tube and the speed-increasing block accelerates the speed at which the cold airflow rushes toward the outer wall of the plasma generating chamber, enhancing the heat dissipation effect. This multi-path, strong convection heat dissipation method effectively avoids component aging or damage caused by heat accumulation in the plasma generating chamber, significantly extending the service life of the equipment, and is especially suitable for long-term continuous production scenarios.

[0023] The combination of the condensation collection chamber and the spiral collection bottle ensures that water droplets generated on the outer wall of the speed-increasing tube are collected by the condensation collection chamber as the cooled air flows towards the plasma generation chamber. These droplets then flow into the spiral collection bottle through the inclined bottom of the inner chamber, preventing condensation from seeping into the equipment and causing circuit failures or component corrosion. The threaded connection design of the spiral collection bottle facilitates regular cleaning, ensuring the continuous effectiveness of the condensation collection function and improving the reliability of the equipment in complex environments.

[0024] The stirring assembly, through the rotation of the fan-shaped rod at the bottom of the plasma generation chamber, disturbs the airflow of plasma active species, improves the spatial distribution uniformity of active species, reduces recombination losses during transport, and enables more active species to reach the substrate surface of the PECVD process chamber evenly. This optimized transport path ensures the consistency of the deposition reaction on the substrate surface and effectively improves the uniformity and quality stability of the film.

[0025] By using hollow positioning blocks, pressing rods, limiting beads, and convex limiting blocks, the plasma generation chamber and the PECVD process chamber can be quickly connected and separated. The locking or unlocking operation can be completed by pressing or releasing the pressing rod, without the need for complicated tools. This significantly shortens the time for equipment installation, disassembly, and maintenance. This design is especially suitable for scenarios that require frequent substrate replacement or chamber cleaning, and significantly improves production efficiency and ease of operation. Attached Figure Description

[0026] Figure 1 This is a schematic diagram showing the overall positional relationship of the device in this invention;

[0027] Figure 2 This is a cross-sectional view of the overall device in this invention;

[0028] Figure 3 For the present invention Figure 2 Enlarged view of the structure at point A in the middle;

[0029] Figure 4 For the present invention Figure 2 Enlarged view of the structure at point B in the middle;

[0030] Figure 5 This is a schematic diagram showing the positional relationship between the ion generating chamber, the processing chamber, and the annular gasket in this invention;

[0031] Figure 6 This is a schematic diagram showing the positional relationship between the ion generating chamber, the condensation collecting chamber, and the arc-shaped block in this invention;

[0032] Figure 7 This is a schematic diagram showing the positional relationship between the arc-shaped block, the curved tube, and the speed-increasing tube in this invention;

[0033] Figure 8 For the present invention Figure 7 Enlarged view of the structure at point C;

[0034] Figure 9 This is an exploded view of the cooling tube, the spacer ring, and the gas choke in this invention;

[0035] Figure 10 This is a schematic diagram showing the positional relationship between the speed-increasing tube and the speed-increasing block in this invention;

[0036] Figure 11 This is a schematic diagram showing the positional relationship between the curved tube, the water-cooling tube, and the positioning block assembly in this invention;

[0037] Figure 12 For the present invention Figure 11 Enlarged view of the structure at point D;

[0038] Figure 13 This is a schematic diagram showing the positional relationship between the plasma generating cavity, microwave magnetron, hollow positioning block, and pressing rod in this invention.

[0039] Figure 14 This is a schematic diagram showing the positional relationship between the hollow positioning block, the platform-shaped limiting block, and the limiting bead in this invention;

[0040] Figure 15 For the present invention Figure 14 Enlarged view of the structure at point E in the middle.

[0041] Figure reference numerals: 11. Plasma generation chamber; 12. PECVD process chamber; 13. Microwave magnetron;

[0042] The splash-proof heat dissipation assembly includes: 21. Machining cavity; 22. Annular gasket; 23. Arc-shaped block; 24. Positioning rod assembly; 25. Connecting block; 26. Cooling tube; 27. Spacing ring; 28. Sealing block; 29. ​​Inclined hole; 210. Airlock plug; 211. Air pump; 212. Curved tube; 213. Water cooling tube; 214. Positioning block assembly;

[0043] The condensation removal assembly includes: 31, condensation collection chamber; 32, speed-increasing tube; 33, speed-increasing block; 34, spiral collection bottle;

[0044] The mixing assembly includes: 41. a positioning frame; 42. a fan blade rod;

[0045] The quick-release assembly includes: 51, hollow positioning block; 52, pressing rod; 53, platform-shaped limiting block; 54, return spring; 55, limiting bead; 56, convex limiting block. Detailed Implementation

[0046] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely for explaining the invention and are not intended to limit the invention.

[0047] In the description of this invention, the terms “center,” “horizontal,” “up,” “down,” “left,” “right,” “vertical,” “horizontal,” “top,” “bottom,” “inner,” and “outer,” etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0048] The specific implementation of the present invention will be described in detail below with reference to specific embodiments.

[0049] Implementation, for example Figure 1 , Figure 2 , Figure 5 , Figure 8 , Figure 9 , Figure 11 and Figure 12 As shown, a remote plasma source device for thin film deposition provided in an embodiment of the present invention includes a plasma generation chamber 11, a PECVD process chamber 12 and a microwave magnetron 13. The PECVD process chamber 12 is connected to the lower part of the plasma generation chamber 11, the microwave magnetron 13 is disposed on the outside of the plasma generation chamber 11, and a splash-proof heat dissipation component is disposed on the outside of the plasma generation chamber 11.

[0050] Specifically, the PECVD process chamber 12 is the main vacuum chamber used to accommodate the substrate and carry out the thin film deposition reaction. The chamber has an inlet (for introducing process gas) and an outlet (connected to the vacuum pump system). At the same time, a heating plate is set inside the PECVD process chamber 12 to support and heat the substrate. The heating plate inside the PECVD process chamber 12 usually contains heating elements such as resistance wire and temperature sensor.

[0051] Specifically, the microwave magnetron 13 is the core microwave source, powered by an external high-voltage DC power supply, and can control its own start-up, shutdown, and power output.

[0052] Specifically, the outer cavity of the plasma generating chamber 11 is made of aluminum alloy, providing the main mechanical support and rigidity, ensuring the stability of the cavity structure, and quickly dissipating the plasma heat absorbed by the inner cavity, effectively controlling the cavity temperature, preventing overheating and cracking of the inner cavity and plasma parameter drift. The processing cavity 21 is made of ceramic, which provides space for plasma generation and confinement, and has extremely high resistance to plasma corrosion and sputtering performance, effectively avoiding metal contamination. It also has good high-temperature stability and insulation. The annular gasket 22 is made of flexible graphite foil. The annular gasket 22 is embedded between the ceramic processing cavity 21 and the aluminum alloy outer cavity of the plasma generating chamber 11. The elastic deformation of the flexible graphite foil absorbs the expansion difference of the aluminum alloy, and its high lateral thermal conductivity can evenly distribute the heat flow, avoiding local overheating and cracking of the ceramic. It can also compressibly fill the micro-unevenness of the surface and reduce the contact thermal resistance.

[0053] The splash-proof heat dissipation assembly includes a processing chamber 21, which is located inside the plasma generating chamber 11. An annular gasket 22 is sleeved on the outside of the processing chamber 21. An arc-shaped block 23 is sleeved on the outside of the plasma generating chamber 11. A connecting block 25 is fixedly connected to the top of the arc-shaped block 23. A cooling tube 26 is arranged inside the connecting block 25. A distance-increasing ring 27 is sleeved on the outside of the cooling tube 26. A sealing block 28 is sleeved on the outside of the distance-increasing ring 27. An inclined hole 29 is opened in an annular shape on the outer wall of the cooling tube 26. An air-blocking plug 210 is snapped onto the top of the cooling tube 26.

[0054] The splash-proof heat dissipation assembly also includes a positioning rod assembly 24, which is fixedly connected to the outer wall of the plasma generating chamber 11. The end of the positioning rod assembly 24 away from the plasma generating chamber 11 is fixedly connected to the arc-shaped block 23. The side of the connecting block 25 away from the arc-shaped block 23 is fixedly connected to the outer wall of the plasma generating chamber 11. An air pump 211 is provided inside the connecting block 25, and an air inlet is provided on the top of the connecting block 25.

[0055] The splash-proof heat dissipation assembly also includes a curved tube 212, which is located inside the arc-shaped block 23. A water-cooling pipe 213 is installed inside the curved tube 212. A positioning block group 214 is sleeved on the outer wall of the water-cooling pipe 213. The outer wall of the positioning block group 214 is fixedly connected to the curved tube 212. The curved tube 212 is connected to the bottom of the cooling pipe 26.

[0056] Specifically, the cooling tube 26, the spacing ring 27, and the sealing block 28 are all located inside the connecting block 25, and the sealing block 28 is connected to the air outlet of the air pump 211 through the internal groove of the connecting block 25, and the end of the curved tube 212 away from the cooling tube 26 is sealed.

[0057] like Figure 6 , Figure 7 and Figure 10 As shown, an anti-condensation component is provided on the arc-shaped block 23. The anti-condensation component includes a condensation collection chamber 31, which is fixedly connected to the side of the arc-shaped block 23 near the plasma generation chamber 11. An acceleration tube 32 is snapped into the inside of the condensation collection chamber 31, and an acceleration block 33 is provided inside the acceleration tube 32. A threaded groove is provided at the bottom of the condensation collection chamber 31, and a spiral collection bottle 34 is threadedly connected to the condensation collection chamber 31 through the threaded groove at the bottom. The bottom of the inner cavity of the condensation collection chamber 31 is set in an inclined shape.

[0058] Specifically, the speed-increasing tube 32 is connected to the curved tube 212, so that the cooled air inside the curved tube 212 will flow along the speed-increasing tube 32 to the plasma generating chamber 11.

[0059] like Figure 3 and Figure 4 As shown, a stirring assembly is provided at the bottom of the inner cavity of the plasma generating chamber 11. The stirring assembly includes a positioning frame 41, which is fixedly connected to the bottom of the inner cavity of the plasma generating chamber 11. A fan blade rod 42 is rotatably connected inside the positioning frame 41.

[0060] like Figures 13 to 15 As shown, quick-release assembly is provided on the plasma generation chamber 11 and the PECVD process chamber 12. The quick-release assembly includes eight hollow positioning blocks 51. The eight hollow positioning blocks 51 are arranged in a ring and slidably connected to the bottom of the plasma generation chamber 11. A pressing rod 52 is slidably connected inside each hollow positioning block 51. A platform-shaped limiting block 53 is fixedly connected to the bottom of each pressing rod 52. A reset spring 54 is sleeved on the outer wall of each pressing rod 52. One end of the reset spring 54 is fixedly connected to the hollow positioning block 51, and the other end of the reset spring 54 is fixedly connected to the pressing rod 52.

[0061] The quick-assembly assembly also includes sixteen limiting beads 55, with each pair of limiting beads 55 forming a group. Each group of limiting beads 55 is positioned between the platform-shaped limiting block 53 and the hollow positioning block 51. The bottom of the hollow positioning block 51 is symmetrically provided with arc-shaped grooves, allowing part of each group of limiting beads 55 to slide out of the outside of the hollow positioning block 51. The top of the PECVD process cavity 12 is fixedly connected to eight convex limiting blocks 56 in a ring shape. Each of the eight convex limiting blocks 56 corresponds to eight pressing rods 52. The top of the inner cavity of each convex limiting block 56 is set as a slope.

[0062] Based on the above embodiments, the following is the complete working process and working principle of the above embodiments:

[0063] Working principle:

[0064] During operation, the plasma generating chamber 11 is connected to the side or top of the PECVD process chamber 12 through a gas guide pipe. The process gas is usually introduced from the upstream or side of the plasma generating chamber 11 and is ionized by microwave energy to form plasma in the chamber. Then, the active species are transported with the gas flow to the PECVD process chamber 12 below and a deposition reaction occurs on the substrate surface on the heating plate.

[0065] During this process, the plasma generating chamber 11 will generate a large amount of heat. Although ceramic materials are resistant to high temperatures, long-term exposure to the high thermal radiation and particle bombardment of plasma will still cause thermal stress cracking or microstructural damage due to heat accumulation. Therefore, during the operation of the plasma generating chamber 11, the staff first needs to start the air pump 211.

[0066] Subsequently, the air pump 211 rapidly draws in air through the air inlet at the top of the connecting block 25. Since the sealing block 28 is connected to the air outlet of the air pump 211 through the internal groove of the connecting block 25, the air is injected into the interior of the sealing block 28 through the groove of the connecting block 25. The air entering the interior of the sealing block 28 flows in the gap formed by the sealing block 28, the spacer ring 27, and the cooling tube 26. This causes the air to first spiral around the outer wall of the sealing block 28 and the cooling tube 26, and finally flow into the interior of the cooling tube 26 through the inclined hole 29. This tangential injection method forces the gas to form a high-speed rotating spiral vortex in the cooling tube 26, forming a spiral motion airflow extending along the length of the tube. At this time, the gas moves in a high-speed circular motion along the tube wall of the cooling tube 26 with extremely strong centrifugal force.

[0067] At the same time, the high-speed rotating vortex will naturally form two layers of airflow inside the cooling tube 26:

[0068] Outer airflow: Under the action of centrifugal force, it rotates close to the pipe wall, and its rotation speed is much higher than that of the inner airflow. Due to the friction between the outer airflow and the pipe wall, as well as the viscous friction inside the airflow, its kinetic energy is continuously converted into heat energy, causing the temperature of the outer airflow to rise, thus becoming a "hot airflow".

[0069] Inner airflow: Located in the center of the vortex, the rotation speed is relatively slow. In the overall spiral motion, the inner airflow will exchange energy with the outer high-temperature airflow. Some of the heat of the outer airflow is transferred to the inner airflow through heat conduction and molecular collision. However, the inner airflow moves towards the cold end along the axis, and the outer hot airflow will be discharged from the hot end, causing the inner airflow to continuously lose heat and the temperature to drop rapidly.

[0070] At this time, the cooling tube 26 is divided into a cold end outlet and a hot end outlet at both ends. The outer high-temperature airflow is discharged through the hot end outlet at the top of the cooling tube 26, while the inner airflow, after energy exchange, is discharged from the cold end outlet at the bottom of the cooling tube 26. Finally, the air is output through the curved tube 212 to achieve rapid cooling of the air.

[0071] The cooled air will flow rapidly inside the curved tube 212. Since the end of the curved tube 212 away from the cooling tube 26 is sealed, the cooled air will flow along the inside of the speed-increasing tube 32 to the outer wall of the plasma generating chamber 11.

[0072] The cooling pipe 26, inclined hole 29, air block 210 and air pump 211 are set to improve heat dissipation efficiency. The air drawn in by the air pump 211 forms a spiral vortex through the cooling pipe 26, and the energy exchange between the inner and outer airflows is used to achieve rapid cooling. At the same time, in conjunction with the water cooling pipe 213 in the curved pipe 212, the airflow temperature is further reduced by the temperature difference of the low-temperature medium, so that the cooled air can efficiently carry away the heat of the plasma generating chamber 11.

[0073] Growth Steps:

[0074] When the cooled air flows along the inside of the speed-increasing tube 32 to the outer wall of the plasma generating chamber 11, the cooled air will flow out along the speed-increasing tube 32 towards the outer wall of the plasma generating chamber 11 because the speed-increasing tube 32 is provided with speed-increasing blocks 33 in a herringbone shape inside.

[0075] At this time, the cooled air will be first divided into two streams, the main stream and the tributary, by the speed-increasing block 33. When the cooled air tributary flows between the speed-increasing tube 32 and the speed-increasing block 33, the cooled air tributary will be accelerated and merged into the main stream again. Then, under the action of the speed-increasing block 33, the cold air flow inside the speed-increasing tube 32 will be accelerated. Finally, the cooled air will be accelerated by the speed-increasing tube 32 and rush towards the outer wall of the plasma generation chamber 11.

[0076] Meanwhile, the combination of speed-increasing tube 32 and speed-increasing block 33 accelerates the speed at which the cold airflow rushes toward the outer wall of the plasma generating chamber 11, enhancing the heat dissipation effect. This multi-path, strong convection heat dissipation method effectively avoids component aging or damage caused by heat accumulation in the plasma generating chamber 11, significantly extending the service life of the equipment, and is especially suitable for long-term continuous production scenarios.

[0077] Water cooling effect:

[0078] Meanwhile, the cooled airflow flows into the curved tube 212 through the bottom of the cooling tube 26. Since the cooling tube 26 is equipped with a water-cooling tube 213, the cooled air enters the curved tube 212. By maintaining the temperature difference of the low-temperature medium, the cooled air causes the water-cooling tube 213 to continuously release heat during its flow, ultimately achieving a further reduction in temperature and thus improving the heat dissipation effect on the plasma generating chamber 11.

[0079] Dew collection:

[0080] As the cooled air flows through the speed-increasing tube 32 into the plasma generating chamber 11, the speed-increasing tube 32 is affected by the temperature difference of the low-temperature medium. Because the temperature of the cooled air inside the speed-increasing tube 32 is lower than the dew point temperature of the surrounding air, the water vapor in the air will change from gaseous to liquid when it encounters cold. As a result, some water droplets will be generated during the process of the speed-increasing tube 32 discharging the cooled air. The water droplets will gradually gather on the outer wall of the speed-increasing tube 32, so that the water droplets on the outer wall of the speed-increasing tube 32 will eventually drip automatically into the interior of the condensation collection chamber 31. At the same time, the setting of the condensation collection chamber 31 prevents moisture from entering the plasma generating chamber 11. The bottom of the inner cavity of the condensation collection chamber 31 is set in an inclined shape, so that the condensation dripping into the condensation collection chamber 31 will gradually flow into the interior of the spiral collection bottle 34. The spiral collection bottle 34, which is threaded to the bottom of the condensation collection chamber 31, can be removed by rotating it.

[0081] The arrangement of the condensation collection chamber 31 and the spiral collection bottle 34 ensures that water droplets generated on the outer wall of the speed-increasing tube 32 are collected by the condensation collection chamber 31 during the process of the cooled air flowing towards the plasma generation chamber 11, and then flow into the spiral collection bottle 34 through the inclined bottom of the inner cavity. This avoids circuit failures or component corrosion caused by condensation seeping into the equipment. The threaded connection design of the spiral collection bottle 34 facilitates regular cleaning, ensuring the continuous effectiveness of the condensation collection function and improving the reliability of the equipment in complex environments.

[0082] Neutralization steps:

[0083] Inside the plasma generation chamber 11, the process gas is ionized by microwave energy to form a plasma containing active species. Driven by the airflow, these active species are transported with the carrier gas to the PECVD process chamber 12 below. When the active species are transported to the PECVD process chamber 12, the fan rod 42 installed on the transport path rotates around the positioning frame 41. The fan rod 42 improves the spatial uniformity of the active species by disturbing the airflow, while optimizing the transport path of the active species and reducing recombination losses during the transport process. This allows the active species with optimized flow field to reach the substrate surface of the heating plate in the PECVD process chamber 12, where a deposition reaction occurs to form a thin film.

[0084] The rotation of the fan rod 42 at the bottom of the plasma generation chamber 11 disturbs the airflow of plasma active species, improves the spatial distribution uniformity of active species, reduces recombination losses during transport, and enables more active species to reach the substrate surface of the PECVD process chamber 12 uniformly. This optimized transport path ensures the consistency of the deposition reaction on the substrate surface and effectively improves the uniformity and quality stability of the film.

[0085] Splash prevention steps:

[0086] During the operation of the plasma generating chamber 11, the processing chamber 21 fundamentally avoids contamination of the plasma generating chamber 11 by metal particles generated by plasma sputtering, thereby improving the purity and quality of the thin film. At the same time, the aluminum alloy outer cavity of the plasma generating chamber 11, combined with a forced water cooling design, efficiently dissipates the high heat generated by the plasma, ensuring that the processing chamber 21 operates within a safe temperature range, significantly extending the chamber's lifespan, and maintaining the long-term stability of plasma parameters.

[0087] Furthermore, the aluminum alloy material of the plasma generating chamber 11 provides high-strength support, and the annular gasket 22 is made of flexible graphite foil. The annular gasket 22 is embedded between the ceramic processing chamber 21 and the aluminum alloy outer cavity of the plasma generating chamber 11. The expansion difference of the aluminum alloy is absorbed by the elastic deformation of the flexible graphite foil, and the high lateral thermal conductivity can evenly distribute the heat flow, avoiding local overheating and cracking of the ceramic processing chamber 21. It can compressibly fill the micro-unevenness of the surface, reduce the contact thermal resistance, overcome the brittleness and insufficient mechanical strength of the pure ceramic cavity of the processing chamber 21, and improve the reliability and durability of the equipment.

[0088] Quick disassembly steps:

[0089] When it is necessary to disassemble the plasma generating chamber 11 and the PECVD process chamber 12, the operator first holds the top of the hollow positioning block 51 and then presses the pressing rod 52, causing the pressing rod 52 to slide downward along the inside of the hollow positioning block 51. At the same time, the return spring 54 will be gradually compressed. During the movement of the pressing rod 52, the platform-shaped limiting block 53 will descend synchronously. When the platform-shaped limiting block 53 descends, under the action of gravity, the limiting bead 55 will descend synchronously with the platform-shaped limiting block 53, causing the limiting bead 55 to disengage from the bottom arc groove of the hollow positioning block 51. As a result, the hollow positioning block 51 loses the restriction of the limiting bead 55 against the inclined surface of the inner cavity of the convex limiting block 56.

[0090] At this time, the staff will pull the hollow positioning block 51 away from the PECVD process chamber 12. The process is the same as above. After pressing the pressing rod 52 in sequence, the hollow positioning block 51 will be pulled out of the convex limiting block 56. Finally, the plasma generating chamber 11 and the PECVD process chamber 12 can be quickly disassembled.

[0091] Quick installation steps:

[0092] When it is necessary to fix the plasma generation chamber 11 and the PECVD process chamber 12, the operator first needs to hold the top of the hollow positioning block 51 and then press the pressing rod 52, so that the pressing rod 52 slides down along the inside of the hollow positioning block 51. At the same time, the return spring 54 will be gradually compressed. During the movement of the pressing rod 52, the platform-shaped limiting block 53 will descend synchronously. When the platform-shaped limiting block 53 descends, under the action of gravity, the limiting bead 55 will descend synchronously with the platform-shaped limiting block 53, so that the limiting bead 55 slides into the inside of the hollow positioning block 51.

[0093] After the staff places the hollow positioning block 51 inside the convex limiting block 56, the staff stops pressing the pressing rod 52. Then the return spring 54 elastically extends and pushes the pressing rod 52 and the platform-shaped limiting block 53 to rise. At the same time, the platform-shaped limiting block 53 will drive the limiting bead 55 to gradually slide into the bottom arc groove of the hollow positioning block 51. At this time, the outer side of the limiting bead 55 abuts against the inner cavity inclined surface of the convex limiting block 56, thereby achieving the purpose of restricting the hollow positioning block 51.

[0094] After the staff inserts eight hollow positioning blocks 51 in sequence, the purpose of fixing the plasma generation cavity 11 and the PECVD process cavity 12 is achieved by using the hollow positioning blocks 51, the platform-shaped limiting blocks 53, the limiting beads 55, and the convex limiting blocks 56.

[0095] By setting up the hollow positioning block 51, the pressing rod 52, the limiting bead 55 and the convex limiting block 56, the plasma generation chamber 11 and the PECVD process chamber 12 can be quickly connected and separated. The locking or unlocking operation can be completed by pressing or releasing the pressing rod 52 without complicated tools, which greatly shortens the time for equipment installation, disassembly and maintenance. This design is especially suitable for scenarios that require frequent substrate replacement or chamber cleaning, which significantly improves production efficiency and ease of operation.

[0096] While several embodiments and examples of the present invention have been described for those skilled in the art, these embodiments and examples are provided as examples and are not intended to limit the scope of the invention. These new embodiments can be implemented in various other ways, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included within the scope and spirit of the invention, and are included within the scope of the invention as described in the claims and its equivalents.

[0097] Furthermore, it should be understood that although this specification describes embodiments, not every embodiment contains only one independent technical solution. This narrative style is merely for clarity. Those skilled in the art should consider the specification as a whole, and the technical solutions in each embodiment can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.

Claims

1. A remote plasma source device for thin film deposition, comprising a plasma generation chamber (11), a PECVD process chamber (12), and a microwave magnetron (13), wherein the PECVD process chamber (12) is connected below the plasma generation chamber (11), and the microwave magnetron (13) is disposed outside the plasma generation chamber (11), characterized in that, A splash-proof heat dissipation component is provided on the outside of the plasma generating cavity (11); The splash-proof heat dissipation assembly includes a processing chamber (21), which is located inside the plasma generating chamber (11). An annular gasket (22) is fitted on the outside of the processing chamber (21), and an arc-shaped block (23) is fitted on the outside of the plasma generating chamber (11). A connecting block (25) is fixedly connected to the top of the arc-shaped block (23). A cooling tube (26) is provided inside the connecting block (25). A distance-extending ring (27) is fitted on the outside of the cooling tube (26), and a sealing block (28) is fitted on the outside of the distance-extending ring (27). An inclined hole (29) is opened in an annular shape on the outer wall of the cooling tube (26), and a gas-blocking plug (210) is snapped on the top of the cooling tube (26). The splash-proof heat dissipation assembly also includes a positioning rod group (24), which is fixedly connected to the outer wall of the plasma generating chamber (11), and the end of the positioning rod group (24) away from the plasma generating chamber (11) is fixedly connected to the arc-shaped block (23). The side of the connecting block (25) away from the arc-shaped block (23) is fixedly connected to the outer wall of the plasma generating chamber (11), and an air pump (211) is provided inside the connecting block (25). The splash-proof heat dissipation assembly also includes a curved tube (212), which is disposed inside the arc block (23). A water-cooling pipe (213) is disposed inside the curved tube (212). A positioning block group (214) is sleeved on the outer wall of the water-cooling pipe (213). The outer wall of the positioning block group (214) is fixedly connected to the curved tube (212). The curved tube (212) is connected to the bottom of the cooling pipe (26). The arc-shaped block (23) is provided with a decondensation removal component, which includes a decondensation collection chamber (31). The decondensation collection chamber (31) is fixedly connected to the side of the arc-shaped block (23) near the plasma generation chamber (11). An acceleration tube (32) is snapped into the inside of the decondensation collection chamber (31). An acceleration block (33) is provided inside the acceleration tube (32). A threaded groove is provided at the bottom of the decondensation collection chamber (31). The decondensation collection chamber (31) is threadedly connected to a spiral collection bottle (34) through the threaded groove at the bottom. The bottom of the inner cavity of the decondensation collection chamber (31) is set in an inclined shape.

2. The remote plasma source device for thin film deposition according to claim 1, characterized in that, A stirring assembly is provided at the bottom of the inner cavity of the plasma generating chamber (11). The stirring assembly includes a positioning frame (41), which is fixedly connected to the bottom of the inner cavity of the plasma generating chamber (11). A fan blade rod (42) is rotatably connected inside the positioning frame (41).

3. The remote plasma source device for thin film deposition according to claim 1, characterized in that, The plasma generating chamber (11) and the PECVD process chamber (12) are equipped with quick-release assembly. The quick-release assembly includes eight hollow positioning blocks (51). The eight hollow positioning blocks (51) are arranged in a ring and slidably connected to the bottom of the plasma generating chamber (11). Each hollow positioning block (51) is slidably connected to a pressing rod (52). Each pressing rod (52) is fixedly connected to a platform-shaped limiting block (53) at its bottom. Each pressing rod (52) is sleeved with a reset spring (54) on its outer wall. One end of the reset spring (54) is fixedly connected to the hollow positioning block (51), and the other end of the reset spring (54) is fixedly connected to the pressing rod (52).

4. A remote plasma source device for thin film deposition according to claim 3, characterized in that, The quick assembly and disassembly assembly also includes sixteen limiting beads (55), and each pair of limiting beads (55) forms a group. Each group of limiting beads (55) is set between the platform-shaped limiting block (53) and the hollow positioning block (51). The bottom of the hollow positioning block (51) is symmetrically provided with arc-shaped grooves. The top of the PECVD process cavity (12) is fixedly connected with eight convex limiting blocks (56) in a ring shape. Each of the eight convex limiting blocks (56) corresponds to eight pressing rods (52). The top of the inner cavity of each convex limiting block (56) is set as an inclined surface.

5. A remote plasma source device for thin film deposition according to claim 1, characterized in that, The outer cavity of the plasma generating chamber (11) is made of aluminum alloy, the processing chamber (21) is made of ceramic, and the annular gasket (22) is made of flexible graphite foil. The annular gasket (22) is embedded between the ceramic processing chamber (21) and the aluminum alloy outer cavity of the plasma generating chamber (11).

6. A remote plasma source device for thin film deposition according to claim 1, characterized in that, The cooling tube (26), the spacing ring (27), and the sealing block (28) are all located inside the connecting block (25), and the sealing block (28) is connected to the air outlet of the air pump (211) through the internal groove of the connecting block (25).

Images