Crystal face orientation method, crystal face orientation device and crystal processing equipment

Abstract

The invention provides a crystal face orientation method, a crystal face orientation device and crystal processing equipment. The crystal face orientation method comprises the following steps: adjusting the crystal face orientation device to enable an included angle between a signal transmitting direction and a signal receiving direction to be equal to a diffraction angle when a predetermined same-family crystal face in a crystal to be detected meets Bragg diffraction; establishing a space rectangular coordinate system, taking a predetermined reflection point as an original point, enabling an X axis to be parallel to a rotation axis of the crystal to be measured, enabling a signal emission direction to be parallel to an XOY plane, and enabling an included angle between the signal emission direction and the X axis to be equal to a Bragg angle theta B of a predetermined family crystal plane; the to-be-detected crystal is driven to rotate around a crystal rotation axis, a diffraction signal is received through a receiver and a rotation angle stroke S is recorded during the period, the crystal rotation axis is parallel to the X axis and is perpendicular to the reference axis, and the rotation angle stroke is a rotation angle of the to-be-detected crystal from an initial state to a peak value of the diffraction signal; and determining an end face crystal orientation deflection angle alpha, an end face crystal orientation positioning angle omega and an end face crystal orientation inclination direction angle phi according to the at least three groups of corner strokes S.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor device production, in particular to a crystal face orientation method, a crystal face orientation instrument and a crystal processing equipment. BACKGROUND

[0002] Before crystal processing, crystal face orientation is needed to determine the end face crystal orientation of the unit cell and the side face crystal orientation, so as to determine the deviation between the end face crystal orientation of the unit cell and the actual physical axis of the crystal, and determine the position of the flat side or notch groove of the crystal. The current crystal face orientation is time-consuming, complicated to operate, and prone to errors. SUMMARY

[0003] In view of this, the present application provides a crystal face orientation method which is simple and fast to operate and not prone to errors, and provides a crystal face orientation instrument and a crystal processing equipment which are simple in structure.

[0004] The crystal face orientation method of the present application is based on a crystal face orientation instrument and a crystal carrier, the crystal face orientation instrument comprising an emitter and a receiver configured with a predetermined reflection point, the emitter and the receiver being respectively arranged along different radial directions of a preset reference axis; the crystal face orientation method comprising:

[0005] Step A, adjusting the crystal face orientation instrument so that the included angle between the signal emission direction and the signal receiving direction is equal to the diffraction angle when the predetermined homologous crystal face of the crystal to be measured satisfies Bragg diffraction;

[0006] Step B, establishing a space rectangular coordinate system, taking the predetermined reflection point as the origin, letting the X-axis be parallel to the rotation axis of the crystal to be measured, letting the signal emission direction be parallel to the XOY plane, and letting the included angle between the signal emission direction and the X-axis be equal to the Bragg angle θ of the predetermined homologous crystal face B ;

[0007] Step C, rotating the crystal to be measured around the rotation axis, during which the receiver receives the diffraction signal and records the rotation angle S, the rotation axis being parallel to the X-axis and perpendicular to the reference axis, and the rotation angle S being the rotation angle of the crystal to be measured from the initial state to the peak value of the diffraction signal;

[0008] Step D, determining the end face crystal orientation deviation angle α, the end face crystal orientation positioning angle ω and the end face crystal orientation inclination direction angle Φ according to at least three groups of rotation angles S,

[0009] the end face crystal orientation deviation angle α being the included angle between the rotation axis and the end face crystal orientation of the unit cell, the end face crystal orientation positioning angle ω being the included angle between the end face crystal orientation projection and the outer circular reference axis of the unit cell, and the end face crystal orientation inclination direction angle Φ being the included angle between the Z-axis and the end face crystal orientation projection of the crystal to be measured in the initial state,

[0010] The end face crystal orientation projection is the orthographic projection of the end face crystal orientation guide line on the YOZ plane, and the extension direction of the end face crystal orientation guide line is the unit cell end face crystal orientation of the crystal to be measured.

[0011] The crystal plane orientation method of the present invention is simplified, and the operation of the crystal plane orienter is easier. Only one crystal plane orienter needs to be set up, and the relevant operations of the crystal plane orienter can be completed by simply driving the crystal to be measured to rotate and receiving the diffraction signal in real time through the receiver. During the orientation period, there is no need to adjust the position of the crystal plane orienter, and the crystal to be measured is always loaded on the crystal carrier. There is no need to unload the crystal to be measured and then reload it, so as to avoid the installation error caused by repeated loading and unloading of the crystal to be measured, which will introduce the crystal plane orientation error.

[0012] In some embodiments, the receiver includes a first receiving end and a second receiving end, and the first receiving end and the second receiving end are symmetrically arranged on both sides of the XOY plane;

[0013] The step D includes: at least three sets of rotation angle strokes S including both the rotation angle of the crystal to be tested from the initial state to the time when the first receiving end receives the peak diffraction signal and the rotation angle of the crystal to be tested from the initial state to the time when the second receiving end receives the peak diffraction signal.

[0014] With such an arrangement, the predetermined homologous crystal plane to be measured is observed from two different positions through two receiving ends respectively, thereby obtaining sufficient position and orientation information about the unit cell end face and the predetermined homologous crystal plane.

[0015] In some embodiments, step C comprises:

[0016] The crystal rotation axis is the physical axis of the crystal to be measured;

[0017] When observing the YOZ plane and the positive direction of the X axis points to the observer's perspective, the crystal to be measured is driven by the crystal carrier to rotate counterclockwise relative to the crystal plane orienter; the positive direction of the Y axis is the rightward extension direction of the Y axis, and the positive direction of the Z axis is the upward extension direction of the Z axis;

[0018] The step D comprises:

[0019] Step D1: Substitute at least three sets of rotation angles S into the crystal orientation solution to solve the end face crystal orientation deviation angle α, the end face crystal orientation orientation angle ω, and the end face crystal orientation tilt angle Φ. The general formula of the crystal orientation solution is:

[0020] ; β is the Bragg angle θ of the predetermined crystal plane B The complementary angle; γ is the angle between the signal transmission direction and the X axis, and γ is equal to the Bragg angle θ of the predetermined homogeneous crystal plane. B .

[0021] In some embodiments, step C comprises:

[0022] Step C1, drive the to-be-tested crystal to rotate around the rotation crystal axis until the diffraction signal of the first unit cell side face in the predetermined homologous crystal face reaches a peak value and is received by one of the first receiving end and the second receiving end, and record the rotation angle stroke S1 of the to-be-tested crystal at the current time relative to the initial state;

[0023] Step C2, drive the to-be-tested crystal to rotate around the rotation crystal axis until the diffraction signal of the first unit cell side face reaches a peak value again and is received by the other of the first receiving end and the second receiving end, and record the rotation angle stroke S2 of the to-be-tested crystal at the current time relative to the initial state;

[0024] Step C3, drive the to-be-tested crystal to rotate around the rotation crystal axis until the diffraction signal of the second unit cell side face in the predetermined homologous crystal face reaches a peak value and is received by the first receiving end or the second receiving end, and record the rotation angle stroke S3 of the to-be-tested crystal at the current time relative to the initial state;

[0025] The first unit cell side face and the second unit cell side face are not parallel to each other.

[0026] In this way, the two receiving ends of the receiver respectively obtain the diffraction signals of the predetermined homologous crystal face from two different positions to indirectly observe the predetermined homologous crystal face, and the crystal direction parameters of the unit cell of the to-be-tested crystal in the spatial rectangular coordinate system are solved by the first unit cell side face and the second unit cell side face which have a clear relative position and are not parallel to each other. According to the related knowledge of linear algebra, in order to solve the end face crystal direction deviation angle α, the end face crystal direction positioning angle ω and the end face crystal direction inclination direction angle Φ, the unit cell side faces of the to-be-tested crystal corresponding to the plurality of rotation angle strokes S of the crystal direction solving formula must be not parallel to each other. For example, the unit cell side face of some crystal is four, and the four unit cell side faces constitute the four sides of a cuboid. If only one receiving end is used, the orientation of the crystal with only four unit cell side faces cannot be performed, because in the three peak diffraction signals collected by the receiver, two of the peak diffraction signals correspond to unit cell side faces that are parallel to each other. The advantage of the two receiving ends is that the same unit cell side face occurs Bragg diffraction twice in two different positions, and the two diffraction signals of the unit cell side face are received by the two receiving ends in turn, thereby generating two rotation angle strokes S1 and S2. These two rotation angle strokes correspond to the same unit cell side face, but the two unit cell side faces are not parallel in the two position states at the two Bragg diffraction times. Then, another Bragg diffraction occurs in another unit cell side face, and another rotation angle stroke S3 is obtained. The unit cell side face that occurs Bragg diffraction for the third time is not parallel to the unit cell side face that occurs Bragg diffraction for the first and second times. In this way, the three peak diffraction signals correspond to unit cell side faces that are not parallel to each other, and the crystal direction solving formula can be used for solving.

[0027] In some embodiments, the crystal direction solving formula includes a first calculation formula and a second calculation formula,

[0028] The first calculation formula of the crystal orientation solving formula is:

[0029]

[0030] The second calculation formula of the crystal orientation solving formula is:

[0031]

[0032] The step D1 comprises:

[0033] Step D11, substituting the rotation angle stroke S1 into the first calculation formula to obtain a first solving equation;

[0034] Step D12, substituting the rotation angle stroke S2 into the first calculation formula to obtain a second solving equation;

[0035] Step D13, substituting the rotation angle stroke S3 into the second calculation formula to obtain a third solving equation;

[0036] The end face crystal orientation deviation angle a, the end face crystal orientation positioning angle w and the end face crystal orientation inclination direction angle F are solved by combining the first solving equation, the second solving equation and the third solving equation,

[0037] m is the included angle of the crystal orientation of any two adjacent crystal faces in the predetermined homologous crystal face, and n is the difference between the position serial numbers of the first unit cell side surface and the second unit cell side surface, and the difference between the position serial numbers of the first unit cell side surface and the second unit cell side surface is not equal to 180° / m.

[0038] In some embodiments, the step C3 comprises:

[0039] Step C31, rotating the to-be-measured crystal around the rotation crystal axis until the diffraction signal of the second unit cell side surface in the predetermined homologous crystal face reaches a peak value and is received by one of the first receiving end and the second receiving end, and recording the rotation angle stroke S3 of the to-be-measured crystal at the current time relative to the initial state;

[0040] Step C32, rotating the to-be-measured crystal around the rotation crystal axis until the diffraction signal of the second unit cell side surface reaches the peak value again and is received by the other of the first receiving end and the second receiving end, and recording the rotation angle stroke S4 of the to-be-measured crystal at the current time relative to the initial state;

[0041] The step D1 further comprises:

[0042] Step D14, substituting the rotation angle stroke S4 into the second calculation formula to obtain a fourth solving equation;

[0043] If the fourth solving equation is correct, the end face crystal orientation deviation angle a, the end face crystal orientation positioning angle w and the end face crystal orientation inclination direction angle F are correct. ​​

[0044] By setting the corner stroke S4 into the second calculation formula of the crystal orientation solving formula, a calculation verification can be performed according to whether the fourth solving equation is established, so as to ensure that the calculation results of the end surface crystal orientation deviation angle α, the end surface crystal orientation positioning angle ω and the end surface crystal orientation tilt direction angle Φ are accurate.

[0045] In some embodiments, the crystal face orientation method can be used to determine the crystal orientation of a single crystal silicon crystal, the predetermined homologous crystal face includes six cell side faces symmetrically arranged about the end surface crystal orientation director line, and m is 60°.

[0046] The crystal face orientation instrument of the present application is used when performing the crystal face orientation method, and the crystal face orientation instrument comprises a body, an emitter and a receiver, the body comprises a crystal mounting side, the emitter is arranged to be inclined to the crystal mounting side along a crystal orientation of a preset reference axis, the receiver is arranged to be inclined to the crystal mounting side along a radial direction of the preset reference axis, the inclination direction of the emitter is different from the inclination direction of the receiver, and a predetermined reflection point is located on the reference axis.

[0047] In some embodiments, the receiver comprises a first receiving end and a second receiving end, the first receiving end and the second receiving end are symmetrical about a preset XOY plane, and the XOY plane is parallel to the signal emission direction of the emitter.

[0048] The crystal processing equipment of the present application comprises a crystal carrier, a crystal processing device and a crystal face orientation instrument. BRIEF DESCRIPTION OF DRAWINGS

[0049] Figure 1 FIG. 1 shows a partial structure schematic diagram of a crystal processing equipment according to an embodiment of the present application;

[0050] Figure 2 FIG. 2 shows a partial structure schematic diagram of a crystal face orientation instrument according to an embodiment of the present application;

[0051] Figure 3 FIG. 3 shows a partial structure schematic diagram of a crystal face orientation instrument according to another embodiment of the present application;

[0052] Figure 4 FIG. 4 shows a partial structure schematic diagram of a crystal face orientation instrument according to another embodiment of the present application; Figure 3 FIG. 5 shows a local enlarged view of the crystal face orientation instrument shown in FIG. 4 at A;

[0053] Figure 5 FIG. 6 shows a partial structure schematic diagram of a crystal face orientation instrument according to another embodiment of the present application; Figure 3 FIG. 7 shows a partial structure schematic diagram of a crystal face orientation instrument according to another embodiment of the present application;

[0054] Figure 6 FIG. 8 shows a schematic diagram of a first arc-shaped guide rail and a second arc-shaped guide rail of a crystal face orientation instrument according to an embodiment of the present application;

[0055] Figure 7A schematic diagram of a single crystal silicon cell;

[0056] Figure 8 A schematic diagram of a single crystal silicon cell when Bragg diffraction occurs on the cell side surface;

[0057] Figure 9 A schematic diagram of a single crystal silicon cell in a spatial rectangular coordinate system;

[0058] Figure 10 A schematic diagram of a first working state of a crystal face orientation instrument according to an embodiment of the present application;

[0059] Figure 11 A schematic diagram of a second working state of a crystal face orientation instrument according to an embodiment of the present application;

[0060] Figure 12 A first schematic diagram of a single crystal silicon cell when Bragg diffraction occurs in a spatial rectangular coordinate system according to an embodiment of the present application;

[0061] Figure 13 A second schematic diagram of a single crystal silicon cell when Bragg diffraction occurs in a spatial rectangular coordinate system according to an embodiment of the present application;

[0062] Figure 14 A third schematic diagram of a single crystal silicon cell when Bragg diffraction occurs in a spatial rectangular coordinate system according to an embodiment of the present application;

[0063] Figure 15 A fourth schematic diagram of a single crystal silicon cell when Bragg diffraction occurs in a spatial rectangular coordinate system according to an embodiment of the present application.

[0064] The figure mark: 10, fuselage; 11, bottom plate; 12, crystal setting side; 20, emitter; 21, X-ray generator; 22, collimator; 23, emitting end support; 30, receiver; 31, first receiving end; 32, second receiving end; 33, guide hole; 34, receiving end support; 40, distance sensor; 51, first driving member; 52, first worm and gear mechanism; 521, first worm wheel part; 522, first worm part; 53, first arc-shaped guide rail; 531, first arc-shaped section; 532, second arc-shaped section; 54, grating ruler; 55, scale indicating member; 61, second driving member; 62, second worm and gear mechanism; 621, second worm wheel part; 622, second worm part; 63, second arc-shaped guide rail; 631, third arc-shaped section; 632, fourth arc-shaped section; 210, cell end surface; 220, cell side surface; 300, crystal to be measured. DETAILED DESCRIPTION

[0065] The technical solutions in the embodiments of the present application will be clearly and completely described with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, but not all the embodiments of the present application. Based on the embodiments of the present application, all other embodiments obtained by a person of ordinary skill in the art without creative effort belong to the scope of the present application.

[0066] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used in the description herein is for describing the specific embodiments only and is not intended to be limiting. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0067] The present application provides a crystal face orientation method based on a crystal face orientation instrument, and provides a crystal face orientation instrument and a crystal processing device, which comprises a crystal carrier, a crystal processing device and the crystal face orientation instrument. The crystal processing device can be a crystal slicing machine or a crystal grinding machine. The crystal slicing machine can be a wire cutting machine using a diamond wire as a cutting material, or a laser invisible cutting machine using a laser as a non-contact cutting means.

[0068] Crystal face orientation refers to determining the position, distribution and orientation angle of the crystal face of the crystal cell of a to-be-tested crystal 300. The crystal obtained by a crystal growth process is in a cylindrical shape. The crystal cell comprises a crystal cell end face 210 and a crystal cell side face 220. The task of crystal face orientation includes determining the deviation of the crystal cell end face 210 and the actual physical axis of the to-be-tested crystal, and determining the position and orientation of the crystal cell side face 220, thereby providing a basis for determining the position of the crystal flat edge or notch groove. The crystal processing device is used for processing the to-be-tested crystal whose crystal face orientation has been completed. Before introducing the crystal face orientation method, the crystal face orientation instrument and the crystal processing device are introduced.

[0069] It should be noted that the crystal cell end face 210 and the crystal cell side face 220 are not absolute. In the case where the crystal cell structure is known, the crystal cell end face 210 and the crystal cell side face 220 can be artificially selected. For example, when the orientation tester selects a crystal cell end face 210 for a crystal cell of a certain crystal material, the crystal cell side face 220 is determined. When the orientation tester selects a crystal cell side face 220 for a crystal cell of a certain crystal material, the crystal cell end face 210 is determined. Figure 7 、 Figure 9As an example, when the to-be-detected crystal is a cylindrical crystal bar, the 111 type crystal face in the crystal cell and the physical end face of the crystal bar have approximately the same orientation, if the 111 type crystal face is selected as the crystal cell end face 210 by the orientation tester, the 110 type crystal face is selected as the crystal cell side face 220, and a straight line is drawn through the geometric center of the 111 type crystal face and perpendicular to the 111 type crystal face, then the outer periphery of the straight line is distributed with six 110 type crystal faces which are symmetrical about the straight line.

[0070] In particular, when the crystal cell end face 210 is selected, the crystal cell side face 220 which is symmetrically distributed about the central normal line of the crystal cell end face 210 is referred to as a predetermined homologous crystal face, and the central normal line of the crystal cell end face 210 is a straight line which passes through the geometric center of the crystal cell end face 210 and is perpendicular to the crystal cell end face 210.

[0071] Referring to Figures 1-3 , the crystal face orientation instrument includes a machine body 10, an emitter 20, and a receiver 30, and the crystal processing device includes the crystal face orientation instrument, a crystal carrier (not shown in the figure), and a crystal processing device, the machine body 10 includes a bottom plate 11 and a crystal placement side 12, the bottom plate 11 can be a horizontally arranged flat plate, the emitter 20 and the receiver 30 are respectively arranged obliquely to the crystal placement side 12 along different radial directions of a preset reference axis, the reference axis is perpendicular to the bottom plate 11, in other words, the emitter 20 is obliquely arranged to the crystal placement side 12 along the radial direction of the reference axis, and the receiver 30 is obliquely arranged to the crystal placement side 12 along the radial direction of the reference axis, and the oblique direction of the emitter 20 is different from the oblique direction of the receiver 30; the crystal carrier includes a bearing part and a loading part, the bearing part is fixed relative to the machine body 10, and the loading part is rotatably arranged on the bearing part about a preset crystal rotation axis, the loading part is used for loading the to-be-detected crystal and driving the to-be-detected crystal 300 to rotate about the crystal rotation axis relative to the machine body 10, the crystal rotation axis is located on the same side of the emitter 20 and the receiver 30 and is arranged to be spaced apart from the crystal placement side 12, the crystal rotation axis is perpendicular to the reference axis and parallel to the horizontally arranged bottom plate 11.

[0072] The crystal face orientation method and the crystal face orientation instrument of the present application are based on the principle of X-ray diffraction. In the process of crystal face orientation, the to-be-detected crystal 300 is located outside the crystal placement side 12 and on the same side of the emitter 20 and the receiver 30, the emitter 20 emits an incident signal to the to-be-detected crystal 300, the incident signal is X-ray, the incident signal is reflected by the crystal cell side face 220 of the to-be-detected crystal 300, and the receiver 30 is used for receiving the reflected signal reflected by the crystal cell side face 220, the reflected signal is X-ray diffraction light path, also known as diffraction signal, only the loading part drives the to-be-detected crystal 300 to rotate about the crystal rotation axis, and the diffraction signal is received in real time by the receiver 30 during this period, the operation of the crystal face orientation instrument can be completed.

[0073] The transmitter 20 has a signal transmitting direction and the receiver 30 has a signal receiving direction. For the transmitter 20 and the receiver 30 arranged on the fuselage 10, the signal transmitting direction is the radial direction of the reference axis and the signal transmitting direction is inclined relative to the crystal mounting side 12, and the signal receiving direction is also the radial direction of the reference axis and the signal receiving direction is also inclined relative to the crystal mounting side 12. The signal transmitting direction and the signal receiving direction have different inclination directions, and the included angle between the signal transmitting direction and the signal receiving direction is neither 0° nor 180°, and can be an acute angle, a right angle or an obtuse angle.

[0074] Optionally, in some embodiments, when the to-be-tested crystal 300 is loaded into the loading part, the crystal rotating axis coincides with the actual physical axis of the to-be-tested crystal 300, and the loading part drives the to-be-tested crystal 300 to rotate relative to the fuselage 10 about the actual physical axis of the to-be-tested crystal 300. As shown in Figure 1 , the extension direction of the actual physical axis of the to-be-tested crystal 300 is referred to as the physical axial direction of the to-be-tested crystal 300, and the actual physical axis of the to-be-tested crystal 300 is denoted by R1 in Figure 1 . In the process of crystal face orientation, the to-be-tested crystal 300 is always loaded on the loading part and located on the same side of the transmitter 20 and the receiver 30. The incident signal enters the to-be-tested crystal 300 from the outer peripheral side of the to-be-tested crystal 300, is then reflected by the cell side surface 220 of the to-be-tested crystal 300, and the diffracted signal exits from the outer peripheral side of the to-be-tested crystal 300 and is received by the receiver 30. It should be noted that the crystal rotating axis and the physical axis of the to-be-tested crystal 300 do not necessarily coincide, and an included angle can be formed therebetween.

[0075] Referring to Figure 1 and Figure 2 , the transmitter 20 includes an X-ray generator 21 and a collimator 22, the collimator 22 includes a transmitting end for emitting linear X-rays, and the signal transmitting direction is the axial direction of the transmitting end; the receiver 30 includes a scintillation counter carrying a receiving end, and in some embodiments, the scintillation counter includes a first counter having a first receiving end 31 and a second counter having a second receiving end 32, the axial line of the first receiving end 31 is parallel to the axial line of the second receiving end 32, the first receiving end 31 and the second receiving end 32 are arranged side by side along the extension direction of the reference axis, and the signal receiving direction is the axial extension direction of the first receiving end 31 and the axial extension direction of the second receiving end 32. The crystal rotating axis is located outside the transmitting end and outside the two receiving ends. When the to-be-tested crystal 300 is loaded into the loading part, the transmitting end is inclined to the outer peripheral side of the to-be-tested crystal 300 along one radial direction of the reference axis, and the first receiving end 31 and the second receiving end 32 are inclined to the outer peripheral side of the to-be-tested crystal 300 along another radial direction of the reference axis.

[0076] The transmitter 20 and the receiver 30 are configured with a predetermined reflection point. A plane is formed by the axis of the first receiving end 31 and the axis of the second receiving end 32, and a center reference line exists in the plane, which is parallel to the axis of the first receiving end 31 and the axis of the second receiving end 32, and the distance from the center reference line to the axis of the first receiving end 31 is equal to the distance from the center reference line to the axis of the second receiving end 32. The intersection of the center reference line and the signal transmission path of the transmitter 20 is the predetermined reflection point, which is located on the reference axis, and the signal transmission path of the transmitter 20 coincides with the axis of the transmitting end.

[0077] In some embodiments, the transmitter 20 is rotatably arranged around the reference axis relative to the body 10, and / or the receiver 30 is rotatably arranged around the reference axis relative to the body 10. In this way, the relative positions of the transmitter 20 and the receiver 30 can be adjusted, and thus the included angle between the signal transmission direction and the signal receiving direction can be adjusted. A person can adjust the signal transmission direction and the signal receiving direction to be equal to the diffraction angle of the predetermined homologous crystal plane of the crystal 300 to be tested that satisfies the Bragg diffraction, so that the crystal orientation instrument is suitable for the crystal orientation of crystals of various materials.

[0078] Preferably, the transmitter 20 and the receiver 30 can be individually rotated around the reference axis relative to the body 10, respectively. The signal transmission direction can be flexibly adjusted by rotating the transmitter 20 around the reference axis, so that the included angle between the signal transmission direction and the rotation axis of the crystal 300 to be tested can be adjusted to be equal to the Bragg angle of the predetermined homologous crystal plane of the crystal 300 to be tested. The signal receiving direction can also be flexibly adjusted by rotating the receiver 30 around the reference axis, so as to ensure that the receiver 30 can effectively receive the diffraction signal. Referring to Figure 3 and Figure 5 The crystal orientation instrument further comprises a first arc-shaped guide rail 53 and a second arc-shaped guide rail 63 arranged on the bottom plate 11, the transmitter 20 is slidingly installed on the first arc-shaped guide rail 53, and the receiver 30 is slidingly installed on the second arc-shaped guide rail 63. The axes of the first arc-shaped guide rail 53 and the second arc-shaped guide rail 63 are the reference axis. In this way, the transmitter 20 is individually rotated around the reference axis by sliding along the first arc-shaped guide rail 53, and the receiver 30 is individually rotated around the reference axis by sliding along the second arc-shaped guide rail 63.

[0079] Further, referring to Figure 5The crystal processing device further comprises a first driving unit and a second driving unit mounted on the machine body 10. The first driving unit comprises a first driving member 51 and a first worm and gear mechanism 52 connected to the emitter 20. The first worm and gear mechanism 52 comprises a first worm part 522 connected to the output end of the first driving member 51 and a first gear part 521 slidably mounted on the first arc-shaped guide rail 53. The first worm part 522 and the first gear part 521 are in meshing engagement. The second driving unit comprises a second driving member 61 and a second worm and gear mechanism 62 connected to the receiver 30. The second worm and gear mechanism 62 comprises a second worm part 622 connected to the output end of the second driving member 61 and a second gear part 621 slidably mounted on the second arc-shaped guide rail 63. The second worm part 622 and the second gear part 621 are in meshing engagement. The first gear part 521 comprises a first arc-shaped tooth array in meshing engagement with the first worm part 522. The first arc-shaped tooth array comprises a plurality of meshing teeth arranged in a circumferential direction along the reference axis. The second gear part 621 comprises a second arc-shaped tooth array in meshing engagement with the second worm part 622. The second arc-shaped tooth array comprises a plurality of meshing teeth arranged in a circumferential direction along the reference axis.

[0080] In this way, the first gear part 521 is accurately slid along the first arc-shaped guide rail 53 and simultaneously accurately rotated around the reference axis under the driving of the first driving member 51 and the first worm part 522. The second gear part 621 is accurately slid along the second arc-shaped guide rail 63 and simultaneously accurately rotated around the reference axis under the driving of the second driving member 61 and the second worm part 622. The emitter 20 is connected to the first gear part 521 so as to be able to rotate around the reference axis with the first gear part 521. The receiver 30 is connected to the second gear part 621 so as to be able to rotate around the reference axis with the second gear part 621.

[0081] Further, referring to Figure 5 The first driving member 51 is a servo motor. The crystal orientation device further comprises a grating ruler 54 and a scale indicating member 55. The scale indicating member 55 is fixedly connected to the emitter 20 and electrically connected to the first driving member 51. The scale indicating member 55 rotates around the reference axis with the emitter 20. The scale indicating member 55 thus rotates relative to the grating ruler 54 and indicates the scale of the grating ruler 54 in real time. The scale of the grating ruler 54 corresponds to the position of the scale indicating member 55 relative to the grating ruler 54.

[0082] The connection between the scale indicating member 55 and the servo motor realizes closed-loop control of the rotation angle of the emitter 20, ensuring that the actual rotation angle of the emitter 20 is consistent with the expected rotation angle. The scale indicating member 55 feeds back the scale of the grating ruler 54 indicated by itself to the first driving member 51. The first driving member 51 performs micro-compensation rotation according to the scale indicating result fed back by the scale indicating member 55 until the scale indicated by the scale indicating member 55 matches the expected rotation angle of the emitter 20.

[0083] As shown in Figures 5-6 , the first arc-shaped guide rail 53 comprises a first arc-shaped section 531 and a second arc-shaped section 532 with the reference axis as the common axis, and the second arc-shaped guide rail 63 comprises a third arc-shaped section 631 and a fourth arc-shaped section 632 with the reference axis as the common axis. The crystal face orientation instrument further comprises a transmitting end support 23 slidably connected with the first arc-shaped section 531, the X-ray generator 21, the scale indicating member 55 and the first worm gear part 521 are all fixedly installed on the transmitting end support 23, the collimator 22 is slidably connected with the second arc-shaped section 532, and the transmitting end support 23 is fixedly provided with a linkage support, and the linkage support is fixedly connected with the collimator 22. In this way, the first arc-shaped section 531 bears the load of the X-ray generator 21, the scale indicating member 55, the transmitting end support 23 and the first worm gear part 521, and the second arc-shaped section 532 bears the load of the collimator 22.

[0084] Further, referring again to Figure 5 , the second driving member 61 is a servo motor, and the crystal face orientation instrument further comprises a receiving end support 34 slidably connected with the third arc-shaped section 631, the second worm gear part 621 is fixedly installed on the receiving end support 34, and the receiver 30 is fixedly connected with the receiving end support 34 and simultaneously slidably connected with the fourth arc-shaped section 632. The third arc-shaped section 631 bears the load of the second worm gear part 621 and part of the load of the receiver 30, and the fourth arc-shaped section 632 bears another part of the load of the receiver 30.

[0085] Further, the first receiving end 31 and the second receiving end 32 are symmetrically arranged about a preset centering plane, the preset centering plane is parallel to the bottom plate 11 and the crystal rotating axis and is perpendicular to the reference axis. The centering reference line and the signal emitting path of the transmitter 20 are both located in the preset centering plane, the signal emitting path is a straight path, and the first receiving end 31 and the second receiving end 32 are movably arranged along the extension direction of the reference axis relative to the machine body 10, that is, the first receiving end 31 and the second receiving end 32 can move towards each other or move away from each other along the reference axis, and the distance of the first receiving end 31 and the second receiving end 32 to the preset centering plane always remains equal.

[0086] In this way, the crystal processing equipment can be adapted to the crystal face orientation of crystals of different materials, including the crystal face orientation of monocrystalline silicon and the crystal face orientation of silicon carbide, and the orientation tester can adjust the distance of the first receiving end 31 to the preset centering plane and the distance of the second receiving end 32 to the preset centering plane according to the specific material of the to-be-tested crystal 300, so that the distance of the two receiving ends to the preset centering plane and the orientation when the Bragg diffraction occurs in the predetermined homologous crystal face in the to-be-tested crystal 300 are matched.

[0087] Further, the crystal orientation apparatus further comprises a distance sensor 40, a signal emitting path of the distance sensor 40, a centering reference line and a signal emitting path of the emitter 20 intersect at a same point, the intersection point being the predetermined reflection point, the predetermined reflection point serving as the signal reflection point, the receiver 30 receiving the peak diffraction signal indicating that the signal reflection point falls on the cell side surface 220 of the crystal 300 to be measured.

[0088] Further, referring to Figures 3-4 , a sliding pair is formed between the receiver 30 and the receiving end support 34, and the two are fixed by detachable fasteners. Before the crystal orientation is performed, the receiver 30 is slid relative to the receiving end support 34, and then the two are locked and fixed by the detachable fasteners. In this way, the receiver 30 can be slid relative to the receiving end support 34 to reach the optimal receiving position, the receiver 30 receives the peak diffraction signal at the optimal receiving position, and the detachable fasteners fix the receiver 30 that has reached the optimal receiving position, which can prevent the receiver 30 from being accidentally deviated due to interference. Specifically, one of the receiver 30 and the receiving end support 34 is provided with a guide hole 33, the detachable fastener passes through the guide hole 33 and connects the other of the receiver 30 and the receiving end support 34, the guide hole 33 is a strip-shaped hole and the extension direction of the guide hole 33 is the radial direction of the second arc-shaped guide rail 63, and the detachable fastener is a bolt.

[0089] Figure 7 The cell is a single crystal silicon cell, which includes three crystal faces, i.e. a 100-type crystal face, a 110-type crystal face and a 111-type crystal face. If the 111-type crystal face is selected as the cell end surface 210, there are six 110-type crystal faces symmetrically distributed about the central normal line of the cell end surface 210, and the six 110-type crystal faces belong to the same family of crystal faces and are referred to as predetermined same-family crystal faces. The actual physical axis of the single crystal silicon crystal and the central normal line of the cell end surface 210 have an angle of deviation, i.e. the normal line of the cell end surface 210 is not completely consistent with the physical axis of the crystal 300 to be measured. The crystal orientation can determine the angle of deviation of the central normal line of the cell end surface 210 relative to the actual physical axis of the crystal 300 to be measured, the direction of inclination of the central normal line of the cell end surface 210 relative to the actual physical axis of the crystal 300 to be measured, and the orientations of the cell side surfaces 220 in the predetermined same-family crystal faces and their respective positions relative to the crystal 300 to be measured.

[0090] In particular, for the crystal 300 to be measured having a single crystal silicon cell structure as shown in Figure 7 , when the physical axis of the crystal 300 to be measured coincides with or is parallel to the rotation axis of the crystal carrier and the crystal mounting side 12 faces the outer peripheral side of the crystal 300 to be measured, it is equivalent to that the 111-type crystal face is selected as the cell end surface 210, and the six 110-type crystal faces symmetrically distributed about the central normal line of the cell end surface 210 serve as the cell side surfaces 220 to be measured, and the six 110-type crystal faces are collectively referred to as the predetermined same-family crystal faces.

[0091] The crystal face orientation method of the present application comprises the following steps:

[0092] Step A, adjusting the crystal face orientation instrument so that the included angle between the signal emission direction and the signal receiving direction is equal to the diffraction angle when the predetermined homologous crystal face of the crystal 300 to be measured satisfies Bragg diffraction;

[0093] Step B, establishing a spatial rectangular coordinate system, taking the predetermined reflection point as the origin, letting the X axis be parallel to the rotation axis of the crystal 300 to be measured, letting the signal emission direction be parallel to the XOY plane, and letting the included angle between the signal emission direction and the X axis be equal to the Bragg angle θ of the predetermined homologous crystal face B ;

[0094] Step C, rotating the crystal 300 to be measured around the rotation crystal axis relative to the crystal face orientation instrument by means of the crystal carrier, during which the diffraction signal is received by the receiver 30 and the rotation angle stroke S is recorded, the rotation crystal axis being parallel to the X axis and perpendicular to the reference axis, and the rotation angle stroke S being the rotation angle of the crystal 300 to be measured from the initial state to the time when the diffraction signal reaches the peak value;

[0095] Step D, determining the crystal orientation parameters according to at least three groups of rotation angle strokes S, the crystal orientation parameters including the end face crystal orientation deviation angle α, the end face crystal orientation positioning angle ω, and the end face crystal orientation inclination direction angle Φ, wherein:

[0096] The end face crystal orientation deviation angle α is the included angle between the rotation crystal axis and the end face crystal orientation of the unit cell;

[0097] The end face crystal orientation positioning angle ω is the included angle between the end face crystal orientation projection and the outer circular reference axis of the unit cell;

[0098] The end face crystal orientation inclination direction angle Φ is the included angle between the Z axis and the end face crystal orientation projection of the crystal 300 to be measured in the initial state;

[0099] The end face crystal orientation projection is the orthographic projection of the end face crystal orientation guide line on the YOZ plane, and the extension direction of the end face crystal orientation guide line is the end face crystal orientation of the unit cell of the crystal 300 to be measured.

[0100] The end face crystal orientation guide line is an imaginary straight line perpendicular to the end face 210 of the unit cell, and the extension direction of the end face crystal orientation guide line is the normal direction of the end face 210 of the unit cell. When the end face crystal orientation guide line passes through the geometric center of the end face 210 of the unit cell, the end face crystal orientation guide line is the central normal line of the end face 210 of the unit cell.

[0101] When the cell end face 210 and the cell side face 220 are selected, the cell outer circle reference axis can be artificially selected freely, and any straight line perpendicular to the central normal line of the cell end face 210 can be used as the cell outer circle reference axis. However, it should be noted that once the cell outer circle reference axis is selected, the cell outer circle reference axis will not change during the implementation of steps A, B and C, and the cell outer circle reference axis can be considered to rotate with the to-be-measured crystal 300 around the rotation axis. In particular, the normal line of any cell side face 220 in the predetermined family of crystal faces can be selected as the cell outer circle reference axis, as shown in FIG. 2B. Figure 9 , Figure 9 In FIG. 2B, the straight line L is the normal line of a cell side face 220, and the straight line L can be used as the cell outer circle reference axis.

[0102] When the physical axis of the to-be-measured crystal 300 coincides with or is parallel to the rotation axis of the crystal carrier, and the crystal mounting side 12 faces the outer peripheral side of the to-be-measured crystal 300, the end face crystal orientation deviation angle a is used to represent the deviation between the crystal orientation of the cell end face 210 and the physical axis of the to-be-measured crystal 300; the end face crystal orientation positioning angle ω can be used to determine the orientation of each cell side face 220 in the predetermined family of crystal faces and the position of each cell side face 220 relative to the to-be-measured crystal 300; and the end face crystal orientation inclination direction angle Φ can be used to determine the inclination direction of the central normal line of the cell end face 210 relative to the actual physical axis of the to-be-measured crystal 300.

[0103] In some embodiments, the receiver 30 includes a first receiving end 31 and a second receiving end 32, and the first receiving end 31 and the second receiving end 32 are symmetrically arranged on both sides of an XOY plane, which is the aforementioned preset centering plane; and step D includes:

[0104] The at least three sets of rotation angles S include the rotation angle of the to-be-measured crystal 300 from the initial state to the time when the first receiving end 31 receives the peak diffraction signal, and the rotation angle of the to-be-measured crystal 300 from the initial state to the time when the second receiving end 32 receives the peak diffraction signal.

[0105] In this way, the predetermined family of crystal faces of the to-be-measured crystal 300 is observed from two different positions by the two receiving ends of the receiver 30, so that sufficient information about the pose and orientation of the cell end face 210 and the predetermined family of crystal faces is obtained.

[0106] In some embodiments, step C includes:

[0107] The rotation axis is the physical axis of the to-be-measured crystal 300.

[0108] In the perspective of observing the YOZ plane and the X axis pointing to the observer, the to-be-measured crystal 300 is rotated in the counterclockwise direction relative to the crystal face orientation instrument by the crystal carrier; the positive direction of the Y axis is the rightward extension direction of the Y axis, and the positive direction of the Z axis is the upward extension direction of the Z axis;

[0109] The step D includes:

[0110] The step D1 includes: substituting the at least three sets of rotation angle strokes S into a crystal orientation solving formula to solve the end face crystal orientation deviation angle a, the end face crystal orientation positioning angle w, and the end face crystal orientation tilt direction angle F, and the general formula of the crystal orientation solving formula is:

[0111] , wherein b is the complementary angle of the Bragg angle q of the predetermined homologous crystal face; and g is the included angle between the signal emission direction and the X axis, and g is equal to the Bragg angle q of the predetermined homologous crystal face. B B

[0112] It should be noted that the above crystal orientation solving formula is applicable to the case that the physical axis of the to-be-measured crystal 300 coincides with the rotation crystal axis, and the X axis is parallel to the physical axis of the to-be-measured crystal 300. If the posture of the to-be-measured crystal 300 changes, the physical axis of the to-be-measured crystal 300 no longer coincides with the rotation crystal axis of the loading part, then the general formula of the crystal orientation solving formula changes; for single crystal silicon, the change of the posture of the to-be-measured crystal 300 means that the cell end face 210 and the cell side face 220 change, and after the posture of the to-be-measured crystal 300 changes, the cell end face 210 is no longer a 111 type crystal face, and the cell side face 220 is no longer a 110 type crystal face.

[0113] Taking X-ray diffraction as an example, when the included angle between the incident light beam and the reflected light beam is equal to the diffraction angle at the Bragg diffraction, the included angle between the incident light beam and the reflecting crystal face, the X-ray wavelength, the crystal face spacing, and the diffraction order satisfy the Bragg law. Referring to Figure 8 , Figure 8 illustrates the optical path of the Bragg diffraction when a cell side face 220 serves as a reflecting crystal face. If the included angle between the incident light beam and the reflected light beam is equal to the diffraction angle at the Bragg diffraction, the included angle between the incident light beam and the reflected light beam is denoted as ∠A, then 180°-∠A=2×q B , q B is the Bragg angle of the reflecting crystal face, and q B is the included angle between the incident light beam and the reflecting crystal face. The included angle between the reflected light beam and the reflecting crystal face is also equal to q B . By performing the step A, it is ensured that the included angle between the signal emission direction and the signal receiving direction remains unchanged during the performance of the steps B and C.

[0114] ​​The reference axis is parallel to the Z axis, and the rotation axis of the crystal to be measured 300 as a rotation axis of the crystal is parallel to the preset centering plane and the X axis. Preferably, the rotation axis of the crystal coincides with the actual physical axis R1 of the crystal to be measured 300.

[0115] In step A, the adjustment of the crystal face orientation instrument includes: driving the emitter 20 to rotate relative to the body 10 about the reference axis; and / or, driving the receiver 30 to rotate relative to the body 10 about the reference axis.

[0116] If the diffraction signal reaches a peak value and is received by the receiver 30, it indicates that the predetermined reflection point falls on a certain unit cell side surface 220 among the predetermined homologous crystal faces of the crystal to be measured 300, and the included angle between the incident signal emitted by the emitter 20 and the unit cell side surface 220 as the reflection crystal face is equal to the Bragg angle of the unit cell side surface 220, that is, the unit cell side surface 220 at this time undergoes Bragg diffraction.

[0117] Since at least three sets of rotation angles S are required to solve the crystal orientation parameters by the crystal orientation solving formula, at least three sets of rotation angles S are recorded when step C is performed, and the three sets of rotation angles S are S1, S2, and S3 in the order of achievement, that is, S1 < S2 < S3, and each rotation angle is the rotation angle of the crystal to be measured 300 from the initial state to the moment when the diffraction signal reaches a peak value. In the actual rotation process of the crystal to be measured 300, the number of times the receiver 30 receives the peak diffraction signal is basically greater than three, and if more than three sets of rotation angles S are substituted into the crystal orientation solving formula, an over-determined equation set is obtained.

[0118] In some embodiments, step C specifically includes:

[0119] Step C1, driving the crystal to be measured 300 to rotate about the rotation axis of the crystal by the crystal carrier until the diffraction signal of the first unit cell side surface 220 in the predetermined homologous crystal face reaches a peak value and is received by one of the first receiving end 31 and the second receiving end 32, and recording the rotation angle S1 of the crystal to be measured 300 at the current time relative to the initial state;

[0120] Step C2, driving the crystal to be measured 300 to rotate about the rotation axis of the crystal by the crystal carrier until the diffraction signal of the first unit cell side surface 220 reaches a peak value again and is received by the other of the first receiving end 31 and the second receiving end 32, and recording the rotation angle S2 of the crystal to be measured 300 at the current time relative to the initial state;

[0121] Step C3, driving the crystal to be measured 300 to rotate about the rotation axis of the crystal by the crystal carrier until the diffraction signal of the second unit cell side surface 220 in the predetermined homologous crystal face reaches a peak value and is received by the first receiving end 31 or the second receiving end 32, and recording the rotation angle S3 of the crystal to be measured 300 at the current time relative to the initial state;

[0122] The first unit cell side surface 220 and the second unit cell side surface 220 are not parallel to each other.

[0123] Figure 10 The crystal plane orientation instrument shown corresponds to the state where the first receiving end 31 receives the peak diffraction signal. Figure 11 The crystal plane orientation instrument shown corresponds to a state where the second receiving end 32 receives a peak diffraction signal. Figure 10 and Figure 11 The viewing angle is: the observer is facing the XOZ plane, and the positive direction of the Y axis is away from the observer.

[0124] Figure 12 、 Figure 13 、 Figure 14 and Figure 15 The figure illustrates the rotation process of a single crystal silicon crystal undergoing crystal plane orientation. The hexagonal outline in the figure represents a predetermined homologous crystal face of a single crystal silicon unit cell. The six sides of the hexagonal outline correspond to six 110-type unit cell side faces 220 arranged symmetrically about the central normal of the unit cell end face 210. The six unit cell side faces 220 are numbered 1 to 6 in a clockwise direction. Figures 12-15 The viewing angle is facing the YOZ plane and the positive direction of the X axis points to the observer.

[0125] When the crystal 300 to be tested rotates counterclockwise around the crystal rotation axis parallel to the X-axis, Bragg diffraction occurs on the side surface 220 of the second unit cell first, and the incident signal emitted by the transmitter 20 is reflected by the side surface 220 of the second unit cell. Figure 12 As shown, the second receiving end 32 first receives the peak diffraction signal, and at this time records the rotational travel S1 of the crystal 300 to be tested relative to the initial state;

[0126] The crystal 300 to be tested continues to rotate counterclockwise around the crystal axis, and Bragg diffraction occurs again on the side surface 220 of the second unit cell. Figure 13 As shown, the first receiving end 31 receives the peak diffraction signal and records the rotational travel S2 of the crystal 300 to be tested relative to the initial state.

[0127] The crystal 300 to be tested continues to rotate counterclockwise around the crystal axis, and the side surface 220 of the unit cell No. 3 adjacent to the side surface 220 of the unit cell No. 2 undergoes a Bragg diffraction, and the incident signal emitted by the transmitter 20 is reflected by the side surface 220 of the unit cell No. 3. Figure 14 As shown, the second receiving end 32 receives the peak diffraction signal again, and at this time records the rotational travel S3 of the crystal 300 to be tested relative to the initial state;

[0128] The crystal 300 to be tested continues to rotate counterclockwise around the crystal axis, and Bragg diffraction occurs again on the side surface 220 of the unit cell No. 3, as shown in FIG. Figure 15As shown, the first receiving end 31 receives the peak diffraction signal again, and the angle stroke S4 of the crystal 300 relative to the initial state is recorded.

[0129] In this way, the two receiving ends of the receiver 30 respectively obtain the diffraction signals of the predetermined family of crystal faces of the crystal 300 from two different positions, thereby achieving multi-angle indirect observation of the predetermined family of crystal faces, and the crystal direction parameters are solved by the second and third crystal cell side surfaces 220 whose relative positions are clear and mutually non-parallel. According to the knowledge of linear algebra, in order to solve the crystal direction parameters, it is necessary to ensure that the three sets of angle strokes S corresponding to the crystal cell side surfaces 220 in the crystal direction solving formula are mutually non-parallel. For a crystal cell having only four crystal cell side surfaces and forming a cuboid with four side surfaces, if only one receiving end is used to receive the diffraction signals, the crystal face orientation cannot be completed, because among the three peak diffraction signals collected by the receiver 30, two peak diffraction signals corresponding to the crystal cell side surfaces are parallel. The advantage of the two receiving ends is that the same crystal cell side surface occurs Bragg diffraction twice in two different positions, and the two diffraction signals of the crystal cell side surface are received by the two receiving ends in turn, thereby generating two angle strokes S1 and S2. These two angle strokes correspond to the same crystal cell side surface 220, but the two crystal cell side surfaces 220 are not parallel in the two position states at the time of Bragg diffraction. Then, another Bragg diffraction of another crystal cell side surface 220 occurs, and another angle stroke S3 is obtained. The crystal cell side surface 220 that occurs Bragg diffraction for the third time is not parallel to the crystal cell side surfaces 220 that occur Bragg diffraction for the first and second times. In this way, the three peak diffraction signals correspond to mutually non-parallel crystal cell side surfaces 220, and the crystal direction parameters can be solved according to the crystal direction solving formula. It can be seen that the receiver 30 with two receiving ends expands the application range of the crystal face orientation method, and can be applied to the crystal face orientation of crystals of different materials.

[0130] Returning to the above steps C1, C2 and C3, the first and second crystal cell side surfaces 220 are two adjacent crystal faces in the predetermined family of crystal faces (110 type crystal faces) with an included angle of 60°. Although the two peak diffraction signals collected in steps C1 and C2 correspond to the second crystal cell side surface 220, S1≠S2, the orientations of the second crystal cell side surface 220 in the two Bragg diffractions are different, and the peak diffraction signal collected in step C3 corresponds to the third crystal cell side surface 220. Therefore, the three angle strokes obtained in steps C1, C2 and C3 can meet the needs of solving the crystal direction parameters.

[0131] Further, the crystal direction solving formula includes a first calculation formula and a second calculation formula,

[0132] The first calculation formula of the crystal direction solving formula is:

[0133] ;

[0134] The second calculation formula of the crystal direction solving formula is:

[0135] ;

[0136] Step D1 comprises:

[0137] Step D11, substituting the rotation angle stroke S1 into the first calculation formula to obtain a first solving equation;

[0138] Step D12, substituting the rotation angle stroke S2 into the first calculation formula to obtain a second solving equation;

[0139] Step D13, substituting the rotation angle stroke S3 into the second calculation formula to obtain a third solving equation;

[0140] The first solving equation is:

[0141] ;

[0142] The second solving equation is:

[0143] ;

[0144] The third solving equation is:

[0145] ;

[0146] The end face crystal direction deviation angle α, the end face crystal direction positioning angle ω and the end face crystal direction inclination direction angle Φ are solved by combining the first solving equation, the second solving equation and the third solving equation,

[0147] m is the included angle of the crystal directions of any two adjacent crystal planes in the predetermined homologous crystal planes, n is the difference between the position serial numbers of the first unit cell side surface 220 and the second unit cell side surface 220, and the predetermined homologous crystal planes are symmetrical about the end face crystal direction guide line when the center normal line of the unit cell end face 210 is taken as the end face crystal direction guide line. When the crystal plane orientation method is used to determine the crystal direction of single crystal silicon, m is 60°; when the crystal plane orientation method is used to determine the crystal direction of single crystal silicon, m is 90°. When the first unit cell side surface 220 is the second unit cell side surface 220 in Figures 12-15 , the second unit cell side surface 220 is the third unit cell side surface 220 in Figures 12-15 , the value of n is 1; assuming that the first unit cell side surface 220 is the second unit cell side surface 220 in Figures 12-15 , the second unit cell side surface 220 is the fourth unit cell side surface 220 in Figures 12-15 , the value of n is 2; assuming that the first unit cell side surface 220 is the second unit cell side surface 220 in Figures 12-15 , the second unit cell side surface 220 is the fourth unit cell side surface 220 in Figures 12-15The value of n is 4, and so on.

[0148] However, it should be noted that since the first unit cell side surface 220 and the second unit cell side surface 220 cannot be mutually parallel unit cell side surfaces 220, the difference between the position numbers of the first unit cell side surface 220 and the second unit cell side surface 220 is not equal to 180° / m, otherwise, the angular travel S1, S2, S3 recorded in this way cannot be used to solve the crystal orientation parameters, for example, if the angular travel S1 and the angular travel S2 correspond to the second unit cell side surface 220, then the angular travel of the fifth unit cell side surface 220 when the peak diffraction signal is reflected cannot be used as the angular travel S3, combined with Figures 12-15 as shown in the following:

[0149] When the fifth unit cell side surface 220 reflects the peak diffraction signal and the peak diffraction signal is received by the second receiving end 32, the position of the fifth unit cell side surface 220 coincides with the position of the second unit cell side surface shown in the second unit cell side surface 220; when the fifth unit cell side surface 220 reflects the peak diffraction signal and the peak diffraction signal is received by the first receiving end 31, the position of the fifth unit cell side surface 220 coincides with the position of the second unit cell side surface shown in the second unit cell side surface 220. Figure 12 Figure 13 When the fifth unit cell side surface 220 reflects the peak diffraction signal and the peak diffraction signal is received by the second receiving end 32, the position of the fifth unit cell side surface 220 coincides with the position of the second unit cell side surface shown in the second unit cell side surface 220; when the fifth unit cell side surface 220 reflects the peak diffraction signal and the peak diffraction signal is received by the first receiving end 31, the position of the fifth unit cell side surface 220 coincides with the position of the second unit cell side surface shown in the second unit cell side surface 220.

[0150] There is a possibility in the calculation of the crystal orientation parameters: the angular travel S1 is substituted into the first calculation formula, and the angular travel S2 and S3 are substituted into the second calculation formula. If the crystal orientation parameters are calculated in this substitution manner, the correct solution cannot be obtained. In order to verify whether the calculation result is accurate, step C3 includes:

[0151] Step C31, drive the to-be-measured crystal 300 to rotate around the rotation crystal axis by the crystal carrier until the diffraction signal of the second unit cell side surface 220 in the predetermined same family crystal surface reaches the peak and is received by one of the first receiving end 31 and the second receiving end 32, and record the angular travel S3 of the to-be-measured crystal 300 at the current time relative to the initial state;

[0152] Step C32, drive the to-be-measured crystal 300 to rotate around the rotation crystal axis by the crystal carrier until the diffraction signal of the second unit cell side surface 220 reaches the peak again and is received by the other one of the first receiving end 31 and the second receiving end 32, and record the angular travel S4 of the to-be-measured crystal 300 at the current time relative to the initial state;

[0153] The step D1 further includes:

[0154] Step D14, substituting the angular travel S4 into the second calculation formula to obtain a fourth solving equation, which is written as:

[0155] ; ​

[0156] If the fourth solving equation is correct, the end face crystal direction deviation angle a, the end face crystal direction positioning angle w and the end face crystal direction inclination direction angle F are correctly solved.

[0157] In this way, the rotation angle stroke S4 is substituted into the second calculation formula, and then it is calculated and verified according to whether the fourth solving equation is correct, so as to ensure that the calculation results of the end face crystal direction deviation angle a, the end face crystal direction positioning angle w and the end face crystal direction inclination direction angle F are accurate. If the end face crystal direction deviation angle a, the end face crystal direction positioning angle w and the end face crystal direction inclination direction angle F are uniquely calculated according to the first solving equation, the second solving equation, the third solving equation and the fourth solving equation, the crystal direction parameter calculation results are correct.

[0158] It should be noted that the relative position relationship of the unit cell side surface 220 corresponding to the continuous three times of Bragg diffraction can be determined according to the difference between the rotation angle strokes S. For example, when the same unit cell side surface 220 is subjected to Bragg diffraction twice, the difference between the rotation angle strokes corresponding to the two times of Bragg diffraction is ΔS1, for example, the rotation angle stroke S2 in the state shown in FIG. 2B and the rotation angle stroke S1 in the state shown in FIG. 2A, ΔS1 is equal to S2-S1; when two different unit cell side surfaces 220 are subjected to Bragg diffraction, the difference between the rotation angle strokes corresponding to the two times of Bragg diffraction is ΔS2, for example, the rotation angle stroke S3 in the state shown in FIG. 2C and the rotation angle stroke S2 in the state shown in FIG. 2B, ΔS2 is equal to S3-S2, and ΔS2>ΔS1. Therefore, in the process of the continuous three times of Bragg diffraction, if the difference between the two rotation angle strokes reached earlier is small, and the difference between the other rotation angle stroke reached later and the former two is large, the two rotation angle strokes reached earlier correspond to the same unit cell side surface 220, and then the two rotation angle strokes reached earlier are substituted into the first calculation formula, and the other rotation angle stroke reached later corresponds to another unit cell side surface 220, and then the rotation angle stroke reached later is substituted into the second calculation formula. Figure 13 Figure 12 Figure 14 Figure 13 Therefore, in the process of the continuous three times of Bragg diffraction, if the difference between the two rotation angle strokes reached earlier is small, and the difference between the other rotation angle stroke reached later and the former two is large, the two rotation angle strokes reached earlier correspond to the same unit cell side surface 220, and then the two rotation angle strokes reached earlier are substituted into the first calculation formula, and the other rotation angle stroke reached later corresponds to another unit cell side surface 220, and then the rotation angle stroke reached later is substituted into the second calculation formula.

[0159] The technical features of the above-described embodiments can be combined in any manner. For the sake of brevity, not all possible combinations of the technical features in the above-described embodiments are described, but it should be understood that any combination of the technical features falls within the scope of the present disclosure as long as the combination does not result in a contradiction.

[0160] Those skilled in the art should understand that the above embodiments are only used to illustrate the present application, but not as a limitation on the present application, and any appropriate changes and variations made to the above embodiments within the spirit and principles of the present application fall within the scope of the present application.​​​

Claims

1. A crystal plane orientation method, the method is based on a crystal plane orientation instrument, characterized in that: The crystal plane orientation instrument comprises a transmitter (20) and a receiver (30) configured with predetermined reflection points, wherein the transmitter (20) and the receiver (30) are respectively arranged along different radial directions of a preset reference axis; The crystal plane orientation method comprises: Step A, adjusting the crystal plane orientation instrument so that the angle between the signal transmission direction and the signal reception direction is equal to the diffraction angle when a predetermined crystal plane of the same family in the crystal to be measured (300) satisfies Bragg diffraction; Step B: Establishing a spatial rectangular coordinate system, taking the predetermined reflection point as the origin, making the X axis parallel to the rotation axis of the crystal to be measured (300), making the signal transmission direction parallel to the XOY plane, and making the angle between the signal transmission direction and the X axis equal to the Bragg angle θ of the predetermined same family crystal plane B ; Step C, driving the crystal to be measured (300) to rotate around the crystal rotation axis, during which the diffraction signal is received by the receiver (30) and the rotation angle stroke S is recorded, wherein the crystal rotation axis is parallel to the X axis and perpendicular to the reference axis, and the rotation angle stroke is the rotation angle of the crystal to be measured (300) from the initial state to the time when the diffraction signal reaches a peak value; Step D, determining the end face crystal orientation deviation angle α, the end face crystal orientation orientation angle ω, and the end face crystal orientation tilt direction angle Φ according to at least three sets of rotation angle strokes S, The end face crystal orientation deviation angle α is the angle between the crystal rotation axis and the end face crystal orientation of the unit cell, the end face crystal orientation orientation angle ω is the angle between the end face crystal orientation projection and the unit cell outer circle reference axis, and the end face crystal orientation tilt direction angle Φ is the angle between the Z axis and the end face crystal orientation projection when the crystal to be measured (300) is in the initial state. The end face crystal orientation projection is the orthographic projection of the end face crystal orientation guide line on the YOZ plane, and the extension direction of the end face crystal orientation guide line is the unit cell end face crystal orientation of the crystal to be measured (300).

2. The crystal plane orientation method according to claim 1, wherein: The receiver (30) includes a first receiving end (31) and a second receiving end (32), wherein the first receiving end (31) and the second receiving end (32) are symmetrically arranged on both sides of an XOY plane, and the step D includes: At least three groups of rotation angle strokes S include both the rotation angle of the crystal to be measured (300) from the initial state to the time when the first receiving end (31) receives the peak diffraction signal and the rotation angle of the crystal to be measured (300) from the initial state to the time when the second receiving end (32) receives the peak diffraction signal.

3. The crystal plane orientation method according to claim 2, wherein: The step C comprises: The crystal rotation axis is the physical axis of the crystal to be measured (300); When observing the YOZ plane and the X-axis points to the observer's perspective, the crystal to be measured (300) is driven by the crystal carrier to rotate counterclockwise relative to the crystal plane orientation instrument; the positive direction of the Y-axis is the rightward extension direction of the Y-axis, and the positive direction of the Z-axis is the upward extension direction of the Z-axis; The step D comprises: Step D1: Substitute at least three sets of rotation angles S into the crystal orientation solution to solve the end face crystal orientation deviation angle α, the end face crystal orientation orientation angle ω, and the end face crystal orientation tilt angle Φ. The general formula of the crystal orientation solution is: , β is the Bragg angle θ of the predetermined homogeneous crystal plane B The complementary angle; γ is the angle between the signal transmission direction and the X axis, and γ is equal to the Bragg angle θ of the predetermined homogeneous crystal plane. B .

4. The crystal plane orientation method according to claim 3, wherein: The step C comprises: Step C1, driving the crystal to be measured (300) to rotate around the crystal rotation axis until the diffraction signal on the side surface of the first unit cell in the predetermined same family crystal plane reaches a peak value and is received by one of the first receiving end (31) and the second receiving end (32), and recording the rotation angle stroke S1 of the crystal to be measured (300) at the current moment relative to the initial state; Step C2, driving the crystal to be tested (300) to rotate around the crystal rotation axis until the diffraction signal on the side of the first unit cell reaches a peak again and is received by the other of the first receiving end (31) and the second receiving end (32), and recording the rotation angle travel S2 of the crystal to be tested (300) at the current moment relative to the initial state; Step C3, driving the crystal to be measured (300) to rotate around the crystal rotation axis until the diffraction signal on the side surface of the second unit cell in the predetermined same family crystal plane reaches a peak value and is received by the first receiving end (31) or the second receiving end (32), and recording the rotation angle stroke S3 of the crystal to be measured (300) at the current moment relative to the initial state; The first unit cell side surface and the second unit cell side surface are not parallel to each other.

5. The crystal plane orientation method according to claim 4, characterized in that: The crystal orientation solution includes a first calculation formula and a second calculation formula. The first calculation formula for the crystal orientation solution is: ； The second calculation formula for the crystal orientation solution is: ； The step D1 comprises: Step D11, substituting the rotation angle stroke S1 into the first calculation formula to obtain a first solution equation; Step D12: Substitute the rotation angle stroke S2 ​​into the first calculation formula to obtain a second solution equation; Step D13: Substitute the rotation angle stroke S3 into the second calculation formula to obtain a third solution equation; The first solution equation, the second solution equation and the third solution equation are solved together to obtain the end face crystal orientation deviation angle α, the end face crystal orientation positioning angle ω and the end face crystal orientation tilt direction angle Φ, m is the angle between the crystal directions of any two adjacent crystal planes in the predetermined same family of crystal planes, n is the difference in position numbers between the side surfaces of the first unit cell and the second unit cell, and the difference in position numbers between the side surfaces of the first unit cell and the second unit cell is not equal to 180° / m.

6. The crystal plane orientation method according to claim 5, wherein: The step C3 comprises: Step C31, driving the crystal to be tested (300) to rotate around the crystal rotation axis until the diffraction signal on the side surface of the second unit cell in the predetermined same family crystal plane reaches a peak value and is received by one of the first receiving end (31) and the second receiving end (32), and recording the rotation angle stroke S3 of the crystal to be tested (300) at the current moment relative to the initial state; Step C32: driving the crystal to be tested (300) to rotate around the crystal rotation axis until the diffraction signal on the side of the second unit cell reaches a peak again and is received by the other of the first receiving end (31) and the second receiving end (32), and recording the rotation angle S4 of the crystal to be tested (300) at the current moment relative to the initial state; The step D1 further includes: Step D14: Substitute the rotation angle stroke S4 into the second calculation formula to obtain a fourth solution equation; If the fourth solution equation is established, the solutions for the end face crystal orientation deviation angle α, the end face crystal orientation positioning angle ω, and the end face crystal orientation tilt direction angle Φ are correct.

7. The crystal plane orientation method according to claim 5, wherein: The crystal plane orientation method can be used to determine the crystal orientation of single crystal silicon. The predetermined same family crystal plane includes six unit cell side surfaces symmetrically arranged about the end face crystal orientation guide line, and m is 60°.

8. A crystal plane orientation instrument, characterized in that: The crystal plane orientator is a crystal plane orientator used when executing the crystal plane orientation method described in any one of claims 1 to 7. The crystal plane orientator comprises a body (10), a transmitter (20) and a receiver (30). The body (10) comprises a crystal placement side (12). The transmitter (20) and the receiver (30) are respectively tilted relative to the crystal placement side (12) along different radial directions of a preset reference axis, and the predetermined reflection point is located on the reference axis.

9. The crystal plane orientation instrument according to claim 8, characterized in that: The receiver (30) comprises a first receiving end (31) and a second receiving end (32), wherein the first receiving end (31) and the second receiving end (32) are symmetrical about an XOY plane, and the XOY plane is parallel to the signal transmission direction of the transmitter (20).

10. A crystal processing device, characterized in that: The invention comprises a crystal carrier, a crystal processing device and a crystal plane orientator as claimed in claim 8 or claim 9.

Images