Substrate processing system and substrate processing method

Abstract

The present disclosure provides a substrate processing system and a substrate processing method capable of improving yield. A substrate processing system according to one embodiment of the present disclosure is provided with: a batch processing unit that uniformly processes a plurality of substrates; a single-sheet processing unit that processes the substrates one by one; and a control circuit that performs: a batch processing time including a time required for the batch processing unit to perform a processing, based on process information including a process in which the processing of the substrate is performed; and selecting and executing one or more than two of the inspections of the inspection items for which the inspection time is equal to or less than the batch processing time on the basis of correspondence information obtained by associating the inspection items of the inspections for the single-sheet processing unit with the inspection time.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to a substrate processing system and a substrate processing method. BACKGROUND

[0002] A substrate processing system provided with a batch processing section and a single piece processing section is known (for example, refer to Patent Literature 1). The batch processing section performs batch processing that uniformly processes a substrate group including a plurality of substrates. The single piece processing section performs single piece processing that processes substrates one by one. In the substrate processing system, the single piece processing and the composite processing including the batch processing and the single piece processing are implemented in parallel.

[0003] PRIOR ART DOCUMENTS

[0004] PATENT LITERATURE

[0005] Patent Literature 1: Japanese Patent Application Publication No. 2023-121571 SUMMARY

[0006] PROBLEMS TO BE SOLVED BY THE INVENTION

[0007] The present disclosure provides a technology capable of improving yield.

[0008] SOLUTION TO PROBLEM

[0009] A substrate processing system according to one embodiment of the present disclosure is provided with: a batch processing section that uniformly processes a plurality of substrates; a single piece processing section that processes substrates one by one; and a control circuit, wherein the control circuit performs processing of: calculating a batch processing time including a time required for the batch processing section to process, based on process information including a process of performing processing of a substrate; and selecting and performing one or two or more of inspection of an inspection item of the single piece processing section, the inspection time of which is equal to or less than the batch processing time, based on correspondence information obtained by corresponding the inspection item to the inspection time.

[0010] EFFECT OF THE INVENTION

[0011] According to the present disclosure, it is possible to improve yield. BRIEF DESCRIPTION OF DRAWINGS

[0012] Figure 1 is a plan view showing a substrate processing system according to an embodiment.

[0013] Figure 2 is a flowchart showing a substrate processing method according to an embodiment.

[0014] Figure 3 is a diagram showing the flow of a substrate in a substrate processing method according to an embodiment.

[0015] Figure 4 It shows Figure 1 Flowchart of an inspection method for a substrate processing system.

[0016] Figure 5 It shows Figure 1 A diagram of a flow of substrates in an inspection method of a substrate processing system.

[0017] Figure 6 This is a diagram showing an example of process information.

[0018] Figure 7 This is a diagram showing an example of correspondence information. DETAILED DESCRIPTION

[0019] Hereinafter, non-limiting exemplary embodiments of the present disclosure will be described with reference to the accompanying drawings. In all the accompanying drawings, the same or corresponding components or parts are denoted by the same or corresponding reference numerals, and repeated descriptions are omitted.

[0020] 〔Substrate processing system〕

[0021] Reference Figure 1 The substrate processing system involved in the embodiment will be described. Figure 1 As shown, the substrate processing system 1 includes a loading and unloading unit 2 , a first interface unit 3 , a batch processing unit 4 , a second interface unit 5 , a single-wafer processing unit 6 , and a control circuit 9 .

[0022] The loading and unloading unit 2 serves as both a loading unit and an unloading unit. Therefore, the substrate processing system 1 can be miniaturized. The loading and unloading unit 2 includes a load port 21 , a stocker 22 , a loader 23 , and a cassette transport device 24 .

[0023] The loading port 21 is arranged on the negative side of the load-in / load-out section 2 in the X-axis direction. A plurality of loading ports 21 (for example, four) are arranged along the Y-axis direction. However, there is no particular limitation on the number of loading ports 21. A box C is placed on the loading port 21. The box C accommodates a plurality of (for example, 25) substrates W, and the substrates W are loaded in and unloaded relative to the loading port 21. Inside the box C, the substrates W are held horizontally and held in the vertical direction at a second pitch P2 (P2 = N × P1) which is N times the first pitch P1. N is a natural number greater than or equal to 2, and is 2 in this embodiment, but may also be 3 or greater.

[0024] The storages 22 are arranged in the Y-axis direction in the center of the X-axis direction of the load / unload part 2 in multiple numbers (for example, four). The storages 22 are arranged in the Y-axis direction on the positive side of the X-axis direction of the load / unload part 2 adjacent to the first interface part 3 in multiple numbers (for example, two). The storages 22 can also be arranged in multiple layers in the vertical direction. The storages 22 temporarily store the cassettes C in which the substrates W before cleaning processing are housed, the cassettes C in which the substrates W are taken out and the interiors of which are empty, the cassettes C in which the substrates for inspection are housed, the cassettes C in which the dummy substrates are housed, and the like. As the substrates for inspection, for example, a bare wafer in which a surface does not have a pattern, a pattern wafer in which a surface has a pattern, and a wafer with a temperature sensor can be cited. The storages 22 can also include a dedicated storage that temporarily stores only the cassettes C in which the substrates for inspection are housed. The storages 22 can also include a dedicated storage that temporarily stores only the cassettes C in which the dummy substrates are housed. Furthermore, the number of the storages 22 is not particularly limited.

[0025] The loader 23 is arranged adjacent to the first interface part 3 and on the positive side of the X-axis direction of the load / unload part 2. The cassettes C are placed on the loader 23. A lid opening / closing mechanism (not shown) for opening and closing the lid of the cassette C is provided on the loader 23. The loader 23 can be provided in multiple numbers. The loader 23 can be arranged in multiple layers in the vertical direction.

[0026] The cassette conveyance device 24 is, for example, a multi-joint conveyance robot. The cassette conveyance device 24 conveys the cassettes C between the load port 21, the storages 22, and the loader 23.

[0027] The first interface part 3 is arranged on the positive side of the X-axis direction of the load / unload part 2. The first interface part 3 conveys the substrates W between the load / unload part 2, the batch processing part 4, and the single piece processing part 6. The first interface part 3 has a substrate transfer device 31, a substrate group forming part 32, and a first handoff table 33.

[0028] The substrate transfer device 31 conveys the substrates W between the cassettes C placed on the loader 23, the substrate group forming part 32, and the first handoff table 33. The substrate transfer device 31 distributes the substrates W housed in the cassettes C placed on the loader 23 between the first handoff table 33 for conveying the substrates W to the single piece processing part 6 and the substrate group forming part 32 for conveying the substrates W to the batch processing part 4. The substrate transfer device 31 is composed of a multi-axis (for example, six-axis) arm robot, and has a substrate holding arm 31a at the front end thereof. The substrate holding arm 31a has multiple holding claws (not shown) capable of holding multiple (for example, 25) substrates W. The substrate holding arm 31a is capable of taking an arbitrary position and posture in a three-dimensional space in a state in which the substrates W are held by the holding claws.

[0029] The substrate group forming part 32 is arranged on the positive side of the X-axis direction of the first interface part 3. The substrate group forming part 32 holds multiple substrates W at a first pitch P1 to form a substrate group L.

[0030] The first transfer table 33 is adjacent to the single wafer processing section 6 and is disposed on the positive side of the Y-axis direction of the first interface section 3. The first transfer table 33 includes a first area for placing the substrates W before processing by the single wafer processing section 6 and a second area for placing the substrates W after processing by the single wafer processing section 6. The first area and the second area are arranged in the vertical direction. It is preferable that the second area be disposed at a position higher in the vertical direction than the first area. In this case, it is possible to prevent the processed substrates from being contaminated by the dropping of foreign matter from the unprocessed substrates. A plurality of substrates W are placed in the first area at the second pitch P2. The first area is configured to be able to place a first number of substrates W. The first number is, for example, 25. The first number is, for example, the same number as the number of substrates W housed in the cassette C. A plurality of substrates W are placed in the second area at the second pitch P2. The second area is configured to be able to place a second number of substrates W. The second number is greater than the first number, and is, for example, 50 or 100. The second number is, for example, the same number as the number of substrates W that make up the substrate group L. The substrate group L is made up of the substrates W of a plurality of cassettes C. The first transfer table 33 receives the substrates W from the substrate transfer device 31 in the first area and temporarily stores the substrates W until the substrates W are delivered to the single wafer processing section 6. The first transfer table 33 receives the substrates W from the fourth conveyance device 61 in the second area and temporarily stores the substrates W until the substrates W are delivered to the load / unload section 2.

[0031] The batch processing section 4 is disposed on the positive side of the X-axis direction of the first interface section 3. That is, the load / unload section 2, the first interface section 3, and the batch processing section 4 are disposed in this order from the negative side of the X-axis direction toward the positive side of the X-axis direction. The batch processing section processes the substrate group L, which includes a plurality of substrates W (for example, 50 or 100) at the first pitch PI, uniformly. One substrate group L is made up of, for example, the substrates W of M cassettes C. M is a natural number of 2 or more. M can be the same natural number as N or a different natural number from N. The batch processing section 4 has a chemical liquid tank 41, a rinse liquid tank 42, a first conveyance device 43, a processing tool 44, and a drive device 45.

[0032] The chemical liquid tank 41 and the rinse liquid tank 42 are disposed along the X-axis direction. For example, the chemical liquid tank 41 and the rinse liquid tank 42 are arranged in this order from the positive side of the X-axis direction toward the negative side of the X-axis direction. In addition, the chemical liquid tank 41 and the rinse liquid tank 42 are collectively referred to as processing tanks. The number of the chemical liquid tank 41 and the rinse liquid tank 42 is not limited to Figure 1 , for example. For example, the chemical liquid tank 41 and the rinse liquid tank 42 are one group in Figure 1 , but can be a plurality of groups.

[0033] The chemical tank 41 is used to store a chemical solution, and the substrate group L is immersed in the chemical solution. The chemical solution is, for example, an aqueous phosphoric acid solution (H3PO4). The aqueous phosphoric acid solution selectively etches and removes the silicon oxide film and the silicon nitride film. The chemical solution is not limited to an aqueous phosphoric acid solution. For example, it can also be DHF (dilute hydrofluoric acid), BHF (a mixture of hydrofluoric acid and ammonium fluoride), dilute sulfuric acid, SPM (a mixture of sulfuric acid, hydrogen peroxide, and water), SC1 (a mixture of ammonia, hydrogen peroxide, and water), SC2 (a mixture of hydrochloric acid, hydrogen peroxide, and water), TMAH (a mixture of tetramethylammonium hydroxide and water), a plating solution, etc. The chemical solution can also be used for stripping treatment or plating treatment. The number of chemical solutions is not particularly limited and can also be multiple.

[0034] The rinse tank 42 stores a first rinse liquid in which the substrate set L is immersed. The first rinse liquid is pure water for removing chemical liquid from the substrate W, such as DIW (deionized water).

[0035] The first transport device 43 includes a guide rail 43a and a first transport arm 43b. The guide rail 43a is positioned on the negative side of the processing tank in the Y-axis direction. The guide rail 43a extends horizontally (in the X-axis direction) from the first interface portion 3 to the batch processing portion 4. The first transport arm 43b moves horizontally (in the X-axis direction) along the guide rail 43a. The first transport arm 43b can also move in the vertical direction and rotate about the vertical axis. The first transport arm 43b uniformly transports the substrate group L between the first interface portion 3 and the batch processing portion 4.

[0036] The processing tool 44 receives and holds the substrate group L from the first transfer arm 43b. The processing tool 44 holds the plurality of substrates W at a first pitch P1 in the Y-axis direction and also holds each of the plurality of substrates W vertically.

[0037] The driving device 45 moves the treatment tool 44 in the X-axis and Z-axis directions. The treatment tool 44 immerses the substrate group L in the chemical solution stored in the chemical solution tank 41, then immerses the substrate group L in the first rinse solution stored in the rinse solution tank 42, and then transfers the substrate group L to the first transport device 43.

[0038] In this embodiment, the number of units comprising the treatment tool 44 and the drive device 45 is one, but it may also be multiple. In the latter case, one unit immerses the substrate assembly L in the chemical solution stored in the chemical solution tank 41, while the other units immerse the substrate assembly L in the first rinse solution stored in the rinse solution tank 42. In this case, the drive device 45 only needs to move the treatment tool 44 in the Z-axis direction, and does not need to move the treatment tool 44 in the X-axis direction.

[0039] The second interface section 5 is disposed on the positive side of the Y-axis direction of the batch processing section 4. The second interface section 5 carries the substrate W between the batch processing section 4 and the single piece processing section 6. The second interface section 5 has an immersion tank 51, a second carrying device 52, a third carrying device 53, and a second handover table 54.

[0040] The immersion tank 51 is disposed outside the moving range of the first carrying arm 43b. For example, the immersion tank 51 is disposed at a position shifted to the positive side of the Y-axis direction with respect to the processing tank. The immersion tank 51 is used to store a second rinse liquid in which the substrate group L is immersed. The second rinse liquid is, for example, DIW (deionized water). The substrate W is held in the second rinse liquid until the substrate W is lifted from the second rinse liquid by the third carrying device 53. The substrate W exists at a position lower than the liquid surface of the second rinse liquid, and thus the surface tension of the second rinse liquid does not act on the substrate W, and collapse of the concave-convex pattern of the substrate W can be prevented.

[0041] The second carrying device 52 has a Y-axis drive device 52a, a Z-axis drive device 52b, and a second carrying arm 52c.

[0042] The Y-axis drive device 52a is disposed on the positive side of the X-axis direction of the second interface section 5. The Y-axis drive device 52a extends from the second interface section 5 to the batch processing section 4 along the horizontal direction (Y-axis direction). The Y-axis drive device 52a moves the Z-axis drive device 52b and the second carrying arm 52c in the Y-axis direction. The Y-axis drive device 52a can include a ball screw.

[0043] The Z-axis drive device 52b is movably attached to the Y-axis drive device 52a. The Z-axis drive device 52b moves the second carrying arm 52c in the Z-axis direction. The Z-axis drive device 52b can include a ball screw.

[0044] The second carrying arm 52c is movably attached to the Z-axis drive device 52b. The second carrying arm 52c receives and holds the substrate group L from the first carrying arm 43b. The second carrying arm 52c holds a plurality of substrates W at the first pitch PI in the Y-axis direction, and holds the plurality of substrates W respectively in the vertical direction. The second carrying arm 52c is moved in the Y-axis direction and the Z-axis direction by the Y-axis drive device 52a and the Z-axis drive device 52b. The second carrying arm 52c is configured to be movable at a plurality of positions including a handover position, an immersion position, and a standby position.

[0045] The handover position is a position at which the substrate group L is handed over between the first carrying arm 43b and the second carrying arm 52c. The handover position is a position on the negative side of the Y-axis direction and on the positive side of the Z-axis direction.

[0046] The immersion position is a position at which the substrate group L is immersed in the immersion tank 51. The immersion position is a position on the positive side in the Y-axis direction and on the negative side in the Z-axis direction from the handover position.

[0047] The standby position is a position at which the second carrying arm 52c waits when the handover of the substrate group L and the immersion of the substrate group L into the immersion tank 51 are not performed. The standby position is directly below (on the negative side in the Z-axis direction) the handover position, and is a position that does not interfere with the movement of the first carrying arm 43b. In this case, the second carrying arm 52c can move to the handover position by moving only upward (on the positive side in the Z-axis direction), and thus the production capacity is improved. The standby position can also be the same position as the immersion position. In this case, the adhesion of particles that can be generated in association with the operation of the first carrying device 43 to the second carrying arm 52c can be prevented. The standby position can also be a position directly above (on the positive side in the Z-axis direction) the immersion position. In this way, by setting the standby position at a position different from the handover position, the first carrying arm 43b and the second carrying arm 52c can be prevented from contacting each other.

[0048] During the operation of the first carrying device 43, the second carrying device 52 moves the second carrying arm 52c to the immersion position or the standby position. Thus, the first carrying arm 43b and the second carrying arm 52c can be prevented from contacting each other.

[0049] The third carrying device 53 is composed of a multi-axis (for example, six-axis) arm robot, and has a third carrying arm 53a at the front end thereof. The third carrying arm 53a has a holding claw (not shown) that can hold one substrate W. The third carrying arm 53a can take an arbitrary position and posture in a three-dimensional space in a state in which the substrate W is held by the holding claw. The third carrying device 53 carries the substrate W between the second handover table 54 and the second carrying arm 52c in the immersion position. At this time, the immersion tank 51 is disposed outside the movement range of the first carrying arm 43b, and thus the first carrying arm 43b and the third carrying arm 53a do not interfere with each other. Thus, one of the first carrying device 43 and the third carrying device 53 can be made to operate independently of the operation state of the other. Therefore, the first carrying device 43 and the third carrying device 53 can be made to operate at an arbitrary timing, and thus the time required to carry the substrate W can be shortened. As a result, the productivity of the substrate processing system 1 is improved.

[0050] The second delivery table 54 is adjacent to the single piece processing section 6 and is disposed on the negative side of the X-axis direction of the second interface section 5. The second delivery table 54 receives the substrate W from the third conveyance device 53, temporarily stores the substrate W until the substrate W is delivered to the single piece processing section 6. That is, the substrate W taken out from the immersion tank 51 is placed on the second delivery table 54. It is preferable that the substrate W placed on the second delivery table 54 is, for example, in a state in which the surface is wetted with the second rinse liquid. In this case, the surface tension of the second rinse liquid does not act on the substrate W, and collapse of the concave-convex pattern of the substrate W can be suppressed. A plurality of (for example, two) substrates W are placed on the second delivery table 54.

[0051] The single piece processing section 6 is disposed at a position on the negative side of the X-axis direction of the second interface section 5 and on the positive side of the Y-axis direction of the conveyance-in and out section 2, the first interface section 3, and the batch processing section 4. The single piece processing section 6 processes the substrates W one by one. The single piece processing section 6 has a fourth conveyance device 61, a liquid processing device 62, and a drying device 63.

[0052] The fourth conveyance device 61 has a guide rail 61a and a fourth conveyance arm 61b. The guide rail 61a is disposed on the negative side of the Y-axis direction of the single piece processing section 6. The guide rail 61a extends in the horizontal direction (X-axis direction) in the single piece processing section 6. The fourth conveyance arm 61b moves along the guide rail 61a in the horizontal direction (X-axis direction) and the vertical direction, and rotates around the vertical axis. The fourth conveyance arm 61b conveys the substrate W between the second delivery table 54, the liquid processing device 62, the drying device 63, and the first delivery table 33. The number of the fourth conveyance arm 61b can be one or a plurality, and in the latter case, the fourth conveyance device 61 collectively conveys a plurality of (for example, five) substrates W.

[0053] The liquid processing device 62 is disposed at a position on the positive side of the X-axis direction and on the positive side of the Y-axis direction of the single piece processing section 6. The liquid processing device 62 is of a single piece type and processes the substrates W one by one with a processing liquid. The liquid processing device 62 is disposed in multiple layers (for example, three layers) in the vertical direction (Z-axis direction). Thus, a plurality of substrates W can be simultaneously processed with the processing liquid. The processing liquid can be of a plurality of types, for example, pure water such as DIW and a drying liquid having a lower surface tension than that of pure water. The drying liquid can be, for example, an alcohol such as IPA (isopropyl alcohol).

[0054] The drying device 63 is disposed adjacent to the liquid processing device 62 on the negative side in the X-axis direction with respect to the liquid processing device 62. In this case, the end surface of the single-wafer processing section 6 on the positive side in the Y-axis direction can be flush or substantially flush with the end surface of the second interface section 5 on the positive side in the Y-axis direction. Thus, almost no dead space is generated, and therefore the occupied space of the substrate processing system 1 can be reduced. In contrast, if the drying device 63 is disposed adjacent to the liquid processing device 62 on the positive side in the Y-axis direction with respect to the liquid processing device 62, the end surface of the single-wafer processing section 6 on the positive side in the Y-axis direction protrudes from the end surface of the second interface section 5 on the positive side in the Y-axis direction, and a dead space can be generated. The drying device 63 is single-wafer type, and performs drying of the substrate W one by one by a supercritical fluid. The drying device 63 is disposed in multiple layers (for example, three layers) in the vertical direction. Thus, a plurality of substrates W can be dried at the same time.

[0055] Alternatively, the liquid processing device 62 and the drying device 63 can not both be single-wafer type, and the liquid processing device 62 can be single-wafer type and the drying device 63 can be batch type. The drying device 63 can perform drying of a plurality of substrates W at the same time by a supercritical fluid. The number of substrates W processed at the same time by the drying device 63 can be equal to or more than the number of substrates W processed at the same time by the liquid processing device 62, but can be less than the number of substrates W processed at the same time by the liquid processing device 62. A device other than the liquid processing device 62 and the drying device 63 can be disposed in the single-wafer processing section 6.

[0056] The control circuit 9 is, for example, a computer, and includes an arithmetic unit 91 such as a CPU (Central Processing Unit) and a storage unit 92 such as a memory. A program for controlling various processes performed in the substrate processing system 1 is stored in the storage unit 92. The control circuit 9 controls the operation of the substrate processing system 1 by causing the arithmetic unit 91 to execute the program stored in the storage unit 92.

[0057] The control circuit 9 includes an electronic circuit such as a CPU, an FPGA (Field Programmable Gate Array), or an ASIC (Application Specific Integrated Circuit). The control circuit 9 performs various control operations described in the present specification by executing an instruction code stored in a memory or by circuit design for a specific purpose.

[0058] [Substrate processing method]

[0059] The substrate processing method according to the embodiment will be described with reference to Figure 2 and Figure 3 Figure 2 ​The processing shown is implemented under the control of the control circuit 9.

[0060] First, the cassette C is carried into the carrying-in / out section 2 in a state in which a plurality of substrates W are housed, and is placed on the loading port 21. The substrate W is, for example, a product wafer. Inside the cassette C, the substrates W are held horizontally, and are held at a second pitch P2 (P2 = N x PI) in the vertical direction. N is a natural number of 2 or more, and is 2 in this embodiment, but can be 3 or more.

[0061] Next, the cassette carrying device 24 carries the cassette C from the loading port 21 to the loader 23 (arrow Fl of FIG. 1). When the cassette C is carried to the loader 23, the lid of the cassette C is opened by the lid opening / closing mechanism. Figure 3

[0062] Next, the control circuit 9 controls each section of the substrate processing system 1 to perform the processing shown. Figure 2 The control circuit 9 controls each section of the substrate processing system 1 so that the processing shown is performed each time the cassette C is placed on the loader 23. Figure 2

[0063] First, the control circuit 9 controls each section of the substrate processing system 1 to carry the substrates W housed in the cassette C to the batch processing section 4 (step S21 of FIG. 2). Specifically, the substrate transfer device 31 receives the substrates W housed in the cassette C, and carries them to the substrate group forming section 32 (arrow F2 of FIG. 2). Figure 2 Figure 3 Next, the substrate group forming section 32 holds the plurality of substrates W at the first pitch PI (PI = P2 / N) to form a substrate group L (step S22 of FIG. 2). One substrate group L is formed, for example, of the substrates W of M cassettes C. Since the pitch of the substrates W is narrowed from the second pitch P2 to the first pitch PI, the number of substrates W that are uniformly processed can be increased. Next, the first carrying device 43 receives the substrate group L from the substrate group forming section 32, and carries it to the processing tool 44 (arrow F3 of FIG. 2).

[0064] Next, the processing tool 44 is lowered from above the chemical liquid tank 41, and immerses the substrate group L in the chemical liquid to perform chemical liquid processing (step S23 of FIG. 2). After that, the processing tool 44 is raised to lift the substrate group L from the chemical liquid, and then moves toward above the rinse liquid tank 42 in the horizontal direction (negative side of the X-axis direction) (arrow F4 of FIG. 2). Figure 2 Figure 3 Next, the processing tool 44 is lowered from above the rinse liquid tank 42, and immerses the substrate group L in the first rinse liquid to perform rinse liquid processing (step S24 of FIG. 2). After that, the processing tool 44 is raised to lift the substrate group L from the rinse liquid, and then moves toward above the second rinse liquid tank 43 in the horizontal direction (positive side of the X-axis direction) (arrow F5 of FIG. 2).

[0065] Next, the processing tool 44 is lowered from above the second rinse liquid tank 43, and immerses the substrate group L in the second rinse liquid to perform rinse liquid processing (step S25 of FIG. 2). After that, the processing tool 44 is raised to lift the substrate group L from the rinse liquid, and then moves toward above the drying section 45 in the horizontal direction (negative side of the X-axis direction) (arrow F6 of FIG. 2). Figure 2 Figure 3 Next, the processing tool 44 is lowered from above the drying section 45, and immerses the substrate group L in the drying gas to perform drying gas processing (step S26 of FIG. 2). After that, the processing tool 44 is raised to lift the substrate group L from the drying gas, and then moves toward above the substrate group forming section 32 in the horizontal direction (positive side of the X-axis direction) (arrow F7 of FIG. 2).

[0066] Next, the substrate group forming section 32 holds the plurality of substrates W at the first pitch PI (PI = P2 / N) to form a substrate group L (step S22 of FIG. 2). One substrate group L is formed, for example, of the substrates W of M cassettes C. Since the pitch of the substrates W is narrowed from the second pitch P2 to the first pitch PI, the number of substrates W that are uniformly processed can be increased. Next, the first carrying device 43 receives the substrate group L from the substrate group forming section 32, and carries it to the processing tool 44 (arrow F3 of FIG. 2). Figure 2 ​​​​​After that, the processing tool 44 is raised to lift the substrate group L from the first rinse liquid. Next, the first transfer device 43 receives the substrate group L from the processing tool 44 and hands over to the second transfer device 52.

[0067] Next, the second transfer arm 52c of the second transfer device 52 moves in the horizontal direction (Y-axis direction positive side), descends from above the immersion tank 51, and immerses the substrate group L in the second rinse liquid (arrow F5 of FIG. 5). Figure 2 Figure 3 Next, the second transfer arm 52c of the second transfer device 52 moves in the horizontal direction (Y-axis direction positive side), descends from above the immersion tank 51, and immerses the substrate group L in the second rinse liquid (arrow F5 of FIG. 5).

[0068] Next, the third transfer device 53 transfers the substrate W of the substrate group L held in the second rinse liquid by the second transfer arm 52c to the second handover table 54 (arrow F6 of FIG. 5). Figure 3

[0069] Next, the fourth transfer device 61 receives the substrate W from the second handover table 54 and transfers to the liquid processing device 62 (arrow F7 of FIG. 5). Figure 3

[0070] Next, the liquid processing device 62 processes the substrate W by a liquid one by one (step S25 of FIG. 5). Figure 2

[0071] Next, the fourth transfer device 61 receives the substrate W from the liquid processing device 62 and holds the substrate W horizontally with the liquid film of the dry liquid facing upward. The fourth transfer device 61 transfers the substrate W from the liquid processing device 62 to the drying device 63 (arrow F8 of FIG. 5). Figure 3

[0072] Next, the drying device 63 dries the substrate W by a supercritical fluid one by one (step S25 of FIG. 5). Figure 2

[0073] ​​​​​​In this embodiment, the drying device 63 is a single-wafer type, but as mentioned above, a batch type can also be used. The batch type drying device 63 uses a supercritical fluid to simultaneously dry multiple substrates W on which liquid films have been formed. While the single-wafer drying device 63 has a single transfer arm that holds the substrates W, the batch type drying device 63 has multiple transfer arms.

[0074] In addition, the drying device 63 of this embodiment dries the substrate W by means of a supercritical fluid, but there is no particular limitation on the drying method. The drying method may be any method as long as it can suppress the collapse of the concave-convex pattern of the substrate W, for example, it may be spin drying, scanning drying, or hydrophobic drying. In spin drying, the substrate W is rotated to remove the liquid film from the substrate W by centrifugal force. In scanning drying, the supply position of the drying liquid is moved from the center of the substrate W toward the periphery of the substrate W while the substrate W is rotated to remove the liquid film from the substrate W by centrifugal force. In scanning drying, the supply position of a drying gas such as N2 gas may also be moved from the center of the substrate W toward the periphery of the substrate W in a manner that follows the supply position of the drying liquid.

[0075] Next, the fourth transfer device 61 receives the substrate W from the drying device 63 and transfers it to the first transfer station 33 ( Figure 3 arrow F9).

[0076] Next, the substrate transfer device 31 receives the substrate W from the first transfer station 33 and stores it in the cassette C placed on the loader 23 ( Figure 2 Step S26, Figure 3 arrow F10).

[0077] Next, the cassette transport device 24 transports the cassette C from the loader 23 to the load port 21 ( Figure 3 The cassette C transported to the load port 21 is unloaded from the loading / unloading unit 2 while containing a plurality of substrates W. Furthermore, the cassette transport device 24 may transport the cassette C from the loader 23 to the stocker 22 and temporarily store the cassette C in the stocker 22.

[0078] Inspection method for substrate processing system

[0079] Reference Figures 4 to 7 The inspection method of the substrate processing system 1 according to the embodiment will be described. Figure 4 The processing shown. Figure 4 In the process shown, the state of the single-wafer processing unit 6 is diagnosed. For example, during the period when a plurality of substrates W are processed by the batch processing unit 4, Figure 4 The processing shown.

[0080] First, the control circuit 9 calculates the batch processing time based on the process information. Then, based on the information obtained by matching the inspection items with the inspection time, the control circuit 9 selects one or more inspection items whose inspection time is less than the batch processing time. Figure 4 The corresponding information may also include the priority corresponding to the inspection item. In this case, the control circuit 9 may also select and execute the inspection of the inspection item based on the priority and the inspection time.

[0081] The process information includes the process of performing the processing of the substrate W. For example, Figure 6 As shown, the process information includes the step number, the type of processing, and the step time. The type of processing and the step time correspond to the step number. The step number includes step S21, step S22, step S23, step S24, step S25, and step S26. The types of processing include removal, substrate group formation, batch processing, immersion, single-wafer processing, and storage. The step time includes time t1, time t2, time t3, time t4, time t5, and time t6. The process information is prepared according to each product specification, for example. The product specification includes, for example, the number of stacked cells of a NAND flash memory with a three-dimensional cell structure. For example, the greater the number of stacked cells, the longer the time t3 of the batch processing in step S23.

[0082] The batch processing time includes the time required for the batch processing unit 4 to perform the processing. Figure 6 In the example shown in FIG, the time required for the batch processing unit 4 to perform the processing is time t3. Time t3 includes the time from the time when the chemical liquid treatment of the substrate set L begins in the batch processing unit 4 to the time when the rinse liquid treatment of the substrate set L ends. Time t3 may also include the time from the time when the first transport device 43 receives the substrate set L from the substrate set forming unit 32 to the time when the substrate set L is handed over to the processing tool 44.

[0083] The batch processing time may also include the time required to form the substrate group. In this case, the inspection time of the single-chip processing unit 6 can be extended. Figure 6 In the example of FIG, the time required to form the substrate group L is time t2. Time t2 includes the time required for the substrate group forming unit 32 to form the substrate group L.

[0084] The batch processing time may include the time for immersing the substrate group L in the immersion tank 51. In this case, the inspection time of the single-wafer processing unit 6 can be extended. Figure 6 In the example, the time for immersing the substrate group L in the immersion tank 51 is time t4. Time t4 includes the time from when the second transport device 52 receives the substrate group L to when the third transport device 53 lifts the first substrate W in the substrate group L from the second rinse liquid.

[0085] The corresponding information is prepared for each kind of process treatment, for example. The kind of process treatment is the kind of treatment performed on the plurality of substrates W being processed by the batch processing section 4. As shown in FIG. 2, for example, the process treatment includes process treatment I, process treatment II, and process treatment III. In the process treatment I, the corresponding information includes an inspection item, an inspection time, and a priority. The inspection time and the priority correspond to the inspection item. In the process treatment II and the process treatment III, the corresponding information also includes the inspection item, the inspection time, and the priority, as in the process treatment I. The process treatment II and the process treatment III can also include different inspection items, inspection times, and priorities from the process treatment I. Figure 7 The inspection item includes an item of inspection for the single piece processing section 6. In the example of FIG. 2, the inspection item includes inspection A, inspection B, inspection C, and inspection D. The inspection time is the time required to perform the inspection of the corresponding inspection item. In the example of FIG. 2, the inspection time includes 1.0 hour, 0.5 hour, 1.0 hour, and 0.5 hour. The priority indicates the priority of the inspection of the corresponding inspection item. In the example of FIG. 2, the priority includes 1, 2, 3, and 4. The numbers of the priority indicate the priority from high to low in the order of 1, 2, 3, and 4.

[0086] Figure 7 The inspection item includes an item of inspection for the single piece processing section 6. In the example of FIG. 2, the inspection item includes inspection A, inspection B, inspection C, and inspection D. The inspection time is the time required to perform the inspection of the corresponding inspection item. In the example of FIG. 2, the inspection time includes 1.0 hour, 0.5 hour, 1.0 hour, and 0.5 hour. The priority indicates the priority of the inspection of the corresponding inspection item. In the example of FIG. 2, the priority includes 1, 2, 3, and 4. The numbers of the priority indicate the priority from high to low in the order of 1, 2, 3, and 4. Figure 7 Figure 7 The inspection item includes an item of inspection for the single piece processing section 6. In the example of FIG. 2, the inspection item includes inspection A, inspection B, inspection C, and inspection D. The inspection time is the time required to perform the inspection of the corresponding inspection item. In the example of FIG. 2, the inspection time includes 1.0 hour, 0.5 hour, 1.0 hour, and 0.5 hour. The priority indicates the priority of the inspection of the corresponding inspection item. In the example of FIG. 2, the priority includes 1, 2, 3, and 4. The numbers of the priority indicate the priority from high to low in the order of 1, 2, 3, and 4.

[0087] For example, in the case where the kind of process treatment is the process treatment I and the batch processing time is 2.5 hours, the control circuit 9 selects one or more than two inspection items in the order of the priority from high to low in such a manner that the total of the inspection times is 2.5 hours or less. That is, the control circuit 9 selects the inspection A, the inspection B, and the inspection C. For example, in the case where the kind of process treatment is the process treatment I and the batch processing time is 3.0 hours, the control circuit 9 selects one or more than two inspection items in the order of the priority from high to low in such a manner that the total of the inspection times is 3.0 hours or less. That is, the control circuit 9 selects the inspection A, the inspection B, the inspection C, and the inspection D.

[0088] The inspection item includes an item of inspection for the single piece processing section 6. In the example of FIG. 2, the inspection item includes inspection A, inspection B, inspection C, and inspection D. The inspection time is the time required to perform the inspection of the corresponding inspection item. In the example of FIG. 2, the inspection time includes 1.0 hour, 0.5 hour, 1.0 hour, and 0.5 hour. The priority indicates the priority of the inspection of the corresponding inspection item. In the example of FIG. 2, the priority includes 1, 2, 3, and 4. The numbers of the priority indicate the priority from high to low in the order of 1, 2, 3, and 4.

[0089] ​​The particle inspection is performed using a particle inspection substrate as an inspection substrate. The particle inspection substrate is, for example, a bare wafer having no pattern on the surface. The particle inspection includes diagnosing a state of the drying device 63 based on a number of particles on the bare wafer that changes due to the processing of the bare wafer by the drying device 63. For example, the control circuit 9 calculates a difference between the number of particles on the bare wafer after the processing by the drying device 63 and the number of particles on the bare wafer before the processing by the drying device 63, and in a case where the difference is greater than a threshold value, diagnoses that the drying device 63 is abnormal. The number of particles can be measured, for example, by a wafer defect inspection device provided separately from the substrate processing system 1.

[0090] The conveyance particle inspection is performed using a particle inspection substrate as an inspection substrate, like the particle inspection. The particle inspection substrate is, for example, a bare wafer having no pattern on the surface. The conveyance particle inspection includes diagnosing a state of the fourth conveyance device 61 based on a number of particles on the bare wafer that changes due to the conveyance of the bare wafer to the fourth conveyance device 61. For example, the control circuit 9 calculates a difference between the number of particles on the bare wafer after the repeated conveyance by the fourth conveyance device 61 and the number of particles on the bare wafer before the conveyance by the fourth conveyance device 61. Then, in a case where the difference is greater than a threshold value, the control circuit 9 diagnoses that the fourth conveyance device 61 is abnormal. The number of particles can be measured, for example, by a wafer defect inspection device provided separately from the substrate processing system 1.

[0091] The pattern collapse inspection is performed using a collapse inspection substrate as an inspection substrate. The collapse inspection substrate is, for example, a pattern wafer having a pattern on the surface. The pattern wafer is, for example, a wafer having the same pattern as a product wafer on the surface. The pattern is, for example, an STI (Shallow Trench Isolation) pattern. The pattern can also be a columnar pattern. The pattern collapse inspection includes diagnosing a state of the drying device 63 based on a state of the pattern on the pattern wafer that changes due to the processing of the pattern wafer by the drying device 63. For example, the control circuit 9 calculates, based on a surface image of the pattern wafer after the processing by the drying device 63 and a surface image of the pattern wafer before the processing by the drying device 63, a number of collapses and a collapse rate of the pattern collapse that occurs due to the processing of the pattern wafer by the drying device 63. Then, in a case where the calculated number of collapses and the collapse rate of the pattern collapse are greater than a threshold value, the control circuit 9 diagnoses that the drying device 63 is abnormal. The surface image of the pattern wafer can be acquired, for example, by an image inspection device provided separately from the substrate processing system 1. The image inspection device is, for example, a scanning electron microscope (SEM: Scanning Electron Microscope).

[0092] The temperature check is performed using a temperature check substrate as the inspection substrate. The temperature check substrate is, for example, a sensor-equipped wafer having a temperature sensor. The sensor-equipped wafer can have a plurality of temperature sensors in the plane of the wafer. The temperature sensor is, for example, a wireless temperature sensor. In this case, the temperature sensor is capable of transmitting the detected temperature to the control circuit 9 by wireless means. The temperature check includes diagnosing the state of the drying device 63 based on the temperature detected by the temperature sensor of the sensor-equipped wafer carried into the drying device 63. The temperature check is performed in a state in which the drying device 63 is set to normal pressure. In this case, it is possible to detect abnormalities in the sealing material such as the O-ring provided in the drying device 63.

[0093] The virtual processing is performed using a simulation substrate as the inspection substrate. The virtual processing includes processing in which a plurality of simulation substrates are flowed into the drying device 63 to improve the cleanliness of the drying device 63.

[0094] In Figure 7 In the correspondence information shown in FIG. 8, for example, the inspection A is virtual processing, the inspection B is particle inspection, the inspection C is pattern collapse inspection, and the inspection D is temperature check.

[0095] Next, the control circuit 9 performs the inspection of the selected one or more than two inspection items. At the time point at which the inspection is started, the cassette C housing the inspection substrate used in the inspection of each inspection item, for example, can be stored in advance in the storage 22, and the inspection substrate can be measured in advance for various states (for example, the number of particles, the surface image) before the processing by the single piece processing section 6. In this case, it is possible to shorten the time required for performing each inspection. In the case where the cassette C housing the inspection substrate is not stored in the storage 22, the cassette C housing the inspection substrate is carried in from the loading port 21.

[0096] It can also be that the control circuit 9 changes the order of the inspection of the selected one or more than two inspection items when performing the inspection of the selected one or more than two inspection items. For example, the control circuit 9 performs the virtual processing last among the inspection of one or more than two inspection items. In this case, when the plurality of substrates W processed by the batch processing section 4 are processed by the drying device 63, the state in which the cleanliness of the drying device 63 is high is achieved.

[0097] First, the control circuit 9 controls each section of the substrate processing system 1 to carry the inspection substrate housed in the cassette C to the single piece processing section 6 (step S42). Specifically, the cassette carrying device 24 carries the cassette C housing the inspection substrate from the storage 22 to the loader 23 (step S42). Figure 4 Figure 5 ​When the box C is transported to the loader 23, the cover of the box C is opened by the cover opening and closing mechanism. Then, the substrate transfer device 31 receives the inspection substrate contained in the box C and transports it to the first transfer station 33 ( Figure 5 Then, the fourth conveying device 61 receives the inspection substrate from the first transfer station 33 and conveys it to the drying device 63 ( Figure 5 Arrow G3).

[0098] Next, the control circuit 9 controls each part of the substrate processing system 1 so that the single-wafer processing part 6 processes the inspection substrate ( Figure 4 Specifically, the drying device 63 performs a predetermined process on the inspection substrate. The predetermined process may be the same as the process of drying the substrate W using the supercritical fluid in step S25 of the substrate processing method described above.

[0099] Next, the control circuit 9 controls each part of the substrate processing system 1 to convey the inspection substrate ( Figure 4 Specifically, the fourth conveying device 61 receives the inspection substrate from the drying device 63 and conveys it to the first transfer station 33 ( Figure 5 Then, the substrate transfer device 31 receives the inspection substrate from the first transfer station 33 and stores it in the box C placed on the loader 23 ( Figure 5 Then, the box transport device 24 transports the box C from the loader 23 to the load port 21 ( Figure 5 The cassette C transported to the load port 21 is unloaded from the loading / unloading unit 2 with the inspection substrates contained therein. The unloaded inspection substrates are transported to an inspection device (e.g., a wafer defect inspection device, an image inspection device) installed separately from the substrate processing system 1 to measure various conditions after processing (e.g., the number of particles, surface image) ( Figure 4 Step S45).

[0100] Next, the control circuit 9 diagnoses the state of the single-wafer processing unit 6 based on the various states of the inspection substrate before processing and the various states of the inspection substrate after processing ( Figure 4 The control circuit 9 may also use a machine learning model to diagnose the status of the wafer processing unit 6. The status of the wafer processing unit 6 may include, for example, the status of the drying device 63. The status of the wafer processing unit 6 may also include the status of the fourth transport device 61. The status of the wafer processing unit 6 may also include the status of the liquid processing device 62.

[0101] The control circuit 9 can also set the drying device 63 diagnosed as abnormal to be unusable when the drying device 63 is diagnosed as having an abnormality in the state. The control circuit 9 can also change the conveyance schedule so that the substrate W is not conveyed to the drying device 63 that is unusable. The conveyance schedule is a conveyance schedule in which the conveyance destinations and the conveyance order of the substrates W are arranged in chronological order. The control circuit 9 can also recalculate the scheduled time at which the processing of the plurality of substrates W in the substrate processing system 1 ends when the conveyance schedule is changed, and transmit the recalculated scheduled time to a host computer or the like that can communicate with the control circuit 9.

[0102] The control circuit 9 can also notify the manager of the substrate processing system 1 of information for identifying the drying device 63 diagnosed as abnormal when the drying device 63 is diagnosed as having an abnormality in the state. In this case, the manager can perform a maintenance work such as replacement of parts of the drying device 63 diagnosed as abnormal. Therefore, it is possible to shorten the time required for recovery of the drying device 63 diagnosed as abnormal. The control circuit 9 can also control each part of the substrate processing system 1 during processing of the plurality of substrates W by the batch processing section 4 and the single piece processing section 6 to convey a test substrate to the drying device 63 diagnosed as abnormal to perform inspection when the maintenance work of the drying device 63 diagnosed as abnormal ends. In this case, the control circuit 9 can also set the drying device 63 diagnosed as normal after the maintenance work to be usable from unusable.

[0103] When the processing of steps S41 to S46 ends, the control circuit 9 controls each part of the substrate processing system 1 so that the single piece processing section 6 starts processing the plurality of substrates W processed by the batch processing section 4.

[0104] The control circuit 9 can also generate data obtained by associating the diagnosis result of the state of the single piece processing section 6 in step S46 with the yield of the plurality of substrates W processed by the single piece processing section 6 after the diagnosis when the single piece processing section 6 ends processing the plurality of substrates W. The control circuit 9 can also store the generated data in the storage section 92. The control circuit 9 can also use the generated data for learning of the machine learning model used in step S46.

[0105] In addition, it sometimes takes several hours from when the plurality of substrates W are processed by the batch processing section 4 until processing is started by the single piece processing section. Therefore, even if each device of the single piece processing section 6 is normal before the plurality of substrates W are processed by the batch processing section 4, an abnormality can occur during the period from when the plurality of substrates W are processed by the batch processing section 4 until processing is started by the single piece processing section 6. In a case where it is assumed that an abnormality of a device cannot be detected by a sensor or the like, the substrate W is processed by the abnormal device, and thus the yield is reduced.

[0106] In contrast, the substrate processing system 1 according to the embodiment includes the batch processing section 4, the single piece processing section 6, and the control circuit 9. The control circuit 9 calculates the batch processing time based on the process information. The control circuit 9 selects and executes one or more checks of the inspection items whose inspection times are equal to or shorter than the batch processing time based on the correspondence information obtained by corresponding the inspection items and the inspection times of the single piece processing section 6. In this case, it is possible to perform the check of the inspection item in a time equal to or shorter than the batch processing time immediately before processing of the plurality of substrates W processed by the batch processing section 4 by the single piece processing section 6, and it is possible to preferentially perform the check of the inspection item having a high possibility of affecting the reduction of the yield. Therefore, it is possible to set the device diagnosed as abnormal as unusable during processing of the plurality of substrates W by the batch processing section 4. As a result, it is possible to balance the maintenance of the productivity and the improvement of the yield.

[0107] It should be understood that the embodiments disclosed herein are illustrative in all respects and are not restrictive. The above-described embodiments can be omitted, replaced, or changed in various ways without departing from the scope of the appended claims and the spirit thereof.

[0108] BRIEF DESCRIPTION OF DRAWINGS

[0109] 1: substrate processing system; 4: batch processing section; 6: single piece processing section; 9: control circuit; W: substrate.

Claims

1. A substrate processing system comprising: a batch processing section that uniformly processes a plurality of substrates; a single piece processing section that processes substrates one by one; and a control circuit, the control circuit performing processing that: calculates a batch processing time that includes a time required for the batch processing section to process, based on process information that includes a process of performing processing of a substrate; and selects and performs one or more of the checks of the check items whose check times are equal to or less than the batch processing time, based on correspondence information obtained by corresponding the check items to the check times for the single piece processing section.

2. The substrate processing system according to claim 1, wherein the checks are performed during processing of the plurality of substrates by the batch processing section.

3. The substrate processing system according to claim 1, further comprising a load lock section into which a cassette that houses a check substrate is carried in and out, the checks including: carrying the check substrate housed in the cassette to the single piece processing section; processing the check substrate by the single piece processing section; carrying the check substrate processed by the single piece processing section to the cassette; and checking the check substrate carried to the cassette.

4. The substrate processing system according to claim 3, wherein the check substrate is a bare wafer that has no pattern on a surface thereof, and the checks include diagnosing a state of the single piece processing section based on a number of particles attached to the bare wafer. wherein 5. The substrate processing system according to claim 3, wherein the check substrate is a pattern wafer that has a pattern on a surface thereof, and the checks include diagnosing a state of the single piece processing section based on a state of the pattern of the pattern wafer.

6. The substrate processing system according to claim 3, wherein the check substrate is a sensor-equipped wafer that has a temperature sensor, and the checks include diagnosing a state of the single piece processing section based on a temperature detected by the sensor-equipped wafer.

7. The substrate processing system according to any one of claims 1 to 6, further comprising an interface section that carries the substrates between the batch processing section and the single piece processing section, the interface section having an immersion tank for immersing the plurality of substrates processed by the batch processing section in a rinsing liquid, the batch processing time including a time for the plurality of substrates to wait in the immersion tank.

8. The substrate processing system according to any one of claims 1 to 6, wherein the correspondence information includes a priority corresponding to the check items, and the control circuit selects and performs the checks of the check items based on the priority.

9. The substrate processing system according to any one of claims 1 to 6, wherein the control circuit changes a carrying schedule of the plurality of substrates processed by the batch processing section based on a result of the checks.

10. The substrate processing system according to any one of claims 1 to 6, wherein ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ The single piece processing section has a drying device that dries the substrate by a supercritical fluid, The inspection includes diagnosing a state of the drying device.

11. A substrate processing method, which is a substrate processing method in a substrate processing system that has: a batch processing section that processes a plurality of substrates collectively; and a single piece processing section that processes substrates one by one, The substrate processing method includes the following processing: calculating a batch processing time that includes a time required for the batch processing section to process, based on process information that includes a process of performing processing of a substrate; and selecting and performing one or more of the inspections of the inspection items of the single piece processing section whose inspection times are below the batch processing time, based on correspondence information that corresponds the inspection items of the single piece processing section to the inspection times. [Claim] 1. A substrate processing system that has: a batch processing section that processes a plurality of substrates collectively; and a single piece processing section that processes substrates one by one, The substrate processing system includes: a drying device that dries the substrate by a supercritical fluid, an inspection device that inspects the single piece processing section, The inspection includes diagnosing a state of the drying device.

2. The substrate processing system according to claim 1, wherein the inspection device includes a diagnosis device that diagnoses a state of the drying device.

3. The substrate processing system according to claim 1 or 2, wherein the inspection includes diagnosing a state of the drying device.

4. The substrate processing system according to any one of claims 1 to 3, wherein the inspection device includes a diagnosis device that diagnoses a state of the drying device.

5. The substrate processing system according to any one of claims 1 to 4, wherein the inspection device includes a diagnosis device that diagnoses a state of the drying device.

6. The substrate processing system according to any one of claims 1 to 5, wherein the inspection device includes a diagnosis device that

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