Bottom anti-reflection composition for 193nm photoetching

Abstract

The invention discloses a bottom anti-reflection composition for 193 nm photoetching. The bottom anti-reflection composition comprises the following components in parts by weight: 50-200 parts of a compound as shown in a formula I, 1-100 parts of a cross-linking agent, 0.01-50 parts of a light absorbent, 0.01-50 parts of a photoacid generator and a solvent. The coating prepared from the composition provided by the invention has relatively strong anti-reflection capability, and an etching process can be avoided.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of photoresist, in particular to a bottom anti-reflective composition for 193nm photoetching. BACKGROUND

[0002] In recent years, due to the continuous high integration of large scale integrated circuits (LSI), in order to miniaturize the photoetching process, especially to carry out the ultra-fine pattern process below 30 nm node, the resolution of the photoresist used in the photoetching process has become a decisive important factor. Therefore, in the commonly used g-line or i-line region, the wavelength of the exposure light is also further shortened, and therefore the research on photoetching using deep ultraviolet, KrF excimer laser and ArF excimer laser has attracted much attention.

[0003] However, when the wavelength of the exposure light source is shortened, the light interference effect caused by the reflected light reflected on the layer to be etched of the semiconductor substrate is increased, and due to undercutting, notching and the like, the problems of poor pattern profile or reduced size uniformity occur. In order to prevent the above problems, a bottom anti-reflective coating (BARC) for absorbing the exposure light (reflected light) is usually formed between the layer to be etched and the photoresist film.

[0004] There are two kinds of etching processes commonly used for anti-reflective coatings at present: etching type and alkali-soluble type. Both processes are to coat an anti-reflective coating on the substrate, then spin a layer of photoresist thereon, and then perform processes such as pre-baking, exposure, post-baking and development. For photoresist development patterning, there is no difference between the two processes, and the biggest difference between them is the removal process of the coating. The etching type anti-reflective coating is mainly removed by plasma, while the alkali-soluble anti-reflective coating is removed by reacting with the developing solution in a similar way to the development mechanism of photoresist. Both processes have their advantages and disadvantages, the etching type process has been widely used in industrial production and has certain controllability and maturity. While the alkali-soluble anti-reflective coating can avoid etching process, reduce the damage of plasma to the substrate, reduce the operation process and improve the production efficiency, but it needs to consider the baking conditions, dissolution rate, post-development residue (PDR) and other problems, therefore, it is urgent to develop excellent alkali-soluble bottom anti-reflective coating (BARC) materials in the industry. SUMMARY

[0005] In view of the defects of poor anti-reflective performance and complicated operation process of the existing alkali-soluble bottom anti-reflective coating, the application provides a bottom anti-reflective composition for 193nm photolithography, and the coating prepared from the composition has strong anti-reflective ability, and can be dissolved in a developing solution of photoresist after an exposure process, so that the same pattern as the photoresist is obtained, thus avoiding the etching process for the anti-reflective coating.

[0006] The application provides a bottom anti-reflective composition, which comprises the following components in parts by weight: 50-200 parts of a compound as shown in formula I, 1-100 parts of a crosslinking agent, 0.01-50 parts of a light absorber, 0.01-50 parts of a photoacid generator and a solvent.

[0007]

[0008] In the bottom anti-reflective composition, the crosslinking agent is a vinyl ether compound; preferably CH2=CH-O-R-CH=CH2, each R is independently selected from C 1-10 alkylene or C 1-10 alkyleneoxy; for example, a compound as shown in formula II

[0009] In the bottom anti-reflective composition, the light absorber is an anthracene compound containing an aromatic structure, for example,

[0010] In the bottom anti-reflective composition, the photoacid generator is one or more of onium salt compounds, sulfone imide derivatives and disulfonyl diazomethane compounds.

[0011] In the bottom anti-reflective composition, the solvent is one or more of ether solvents, ester solvents, alcohol solvents, aromatic hydrocarbon solvents, ketone solvents and amide solvents.

[0012] In the bottom anti-reflective composition, the ether solvent is preferably one or more of propylene glycol monobutyl ether, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether and propylene glycol monomethyl ether; and is further preferably propylene glycol monobutyl ether.

[0013] The ester solvent in the bottom anti-reflective composition is preferably one or more of propylene glycol monobutyl ether acetate, methyl cellosolve acetate, ethyl cellosolve acetate, propylene glycol monomethyl ether acetate, propylene glycol propyl ether acetate, 2-hydroxypropionic acid ethyl ester, 2-hydroxy-2-methyl-propionic acid ethyl ester, ethoxy acetic acid ethyl ester, hydroxy acetic acid ethyl ester, 2-hydroxy-3-methyl butyric acid methyl ester, 3-methoxy propionic acid methyl ester, 3-methoxy propionic acid ethyl ester, 3-ethoxy propionic acid ethyl ester, 3-ethoxy propionic acid methyl ester, pyruvic acid methyl ester, pyruvic acid ethyl ester, ethyl acetate, butyl acetate, ethyl lactate, and butyl lactate.

[0014] The alcohol solvent in the bottom anti-reflective composition is preferably propylene glycol.

[0015] The aromatic hydrocarbon solvent in the bottom anti-reflective composition is preferably toluene and / or xylene.

[0016] The ketone solvent in the bottom anti-reflective composition is preferably one or more of methyl ethyl ketone, cyclopentanone, and cyclohexanone.

[0017] The amide solvent in the bottom anti-reflective composition is preferably one or more of N,N-dimethylformamide, N,N-dimethylacetamide, and N-methylpyrrolidone.

[0018] The amount of the compound of Formula I in the bottom anti-reflective composition is preferably 50-150, more preferably 50-100, for example 100.

[0019] The amount of the crosslinking agent in the bottom anti-reflective composition is preferably 1-20, for example 1, 5, 10, or 20.

[0020] The amount of the photoabsorber in the bottom anti-reflective composition is preferably 1-20, for example 1, 5, 10, or 20.

[0021] The amount of the photoacid generator in the bottom anti-reflective composition is preferably 1-20, for example 1, 5, 10, or 20.

[0022] The amount of the solvent in the bottom anti-reflective composition is 1000-2500, preferably 1200-2000, more preferably 1500-1800, for example 1000.

[0023] The onium salt compound in the bottom anti-reflective composition is preferably an iodonium salt compound, a sulfonium salt compound, or a crosslinkable onium salt compound.

[0024] The iodonium salt compound is preferably one or more of diphenyl iodonium hexafluorophosphate, diphenyl iodonium triflate, diphenyl iodonium nonafluoro-n-butane sulfonate, diphenyl iodonium perfluoro-n-octane sulfonate, diphenyl iodonium camphorsulfonate, bis(4-tert-butylphenyl) iodonium camphorsulfonate, and bis(4-tert-butylphenyl) iodonium triflate.

[0025] The sulfonium salt compound is preferably one or more of triphenyl sulfonium hexafluoroantimonate, triphenyl sulfonium nonafluoro-n-butane sulfonate, triphenyl sulfonium camphorsulfonate, and triphenyl sulfonium triflate, and more preferably triphenyl sulfonium hexafluoroantimonate and / or triphenyl sulfonium triflate.

[0026] The cross-linkable onium salt compound is preferably one or more of bis(4-hydroxyphenyl)(phenyl)sulfonium triflate, bis(4-hydroxyphenyl)(phenyl)sulfonium 1,1,2,2,3,3,4,4,4-nonafluorobutane-1-sulfonate, phenyl bis(4-(2-(vinyloxy)ethoxy)-phenyl)sulfonium 1,1,2,2,3,3,4,4-octafluoro-butane-1,4-disulfonate, and tris(4-(2-(vinyloxy)ethoxy)-phenyl)sulfonium 1,1,2,2,3,3,4,4-octafluoro-butane-1,4-disulfonate.

[0027] The sulfone imide derivative in the bottom anti-reflective composition is preferably one or more of N-(trifluoromethanesulfonyloxy)succinimide, N-(fluoro-n-butanesulfonyloxy)succinimide, N-(camphorsulfonyloxy)succinimide, and N-(trifluoromethylsulfonyloxy)naphthalene dicarboxyimide.

[0028] The disulfonyl diazomethane compound in the bottom anti-reflective composition is preferably one or more of bis(trifluoromethylsulfonyl)diazomethane, bis(cyclohexylsulfonyl)diazomethane, bis(benzenesulfonyl)diazomethane, bis(p-toluenesulfonyl)diazomethane, bis(2,4-dimethylbenzenesulfonyl)diazomethane, and methylsulfonyl-p-toluenesulfonyl diazomethane.

[0029] The bottom anti-reflective composition can further contain other additional components. The additional components include a surfactant or a smoothing agent.

[0030] The amount of the additional component in the bottom anti-reflective composition is not particularly limited and can be appropriately determined depending on the target coating.

[0031] The bottom anti-reflective composition is composed of the following components in parts by weight: 50 to 200 parts of the compound represented by Formula I, 1 to 100 parts of a cross-linking agent, 0.01 to 50 parts of a light absorbing agent, 0.01 to 50 parts of a photo-acid generator, and a solvent.

[0032] The types and weight proportions of the compound represented by Formula I, the crosslinking agent, the light absorber, the photoacid generator, and the solvent are the same as those described above.

[0033] In the aforementioned bottom anti-reflective composition, the composition is any one of the following compositions:

[0034] Composition C1-1: 100 parts of the compound shown in Formula I, 1 part of the compound shown in Formula II, and 1 part of... 1 part triphenylsulfonium hexafluoroantimonate and 1000 parts propylene glycol monobutyl ether;

[0035] Composition C1-2: 100 parts of the compound shown in Formula I, 5 parts of the compound shown in Formula II, and 5 parts of... 5 parts triphenylsulfonium hexafluoroantimonate and 1000 parts propylene glycol monobutyl ether;

[0036] Composition C1-3: 100 parts of the compound shown in Formula I, 10 parts of the compound shown in Formula II, and 10 parts of... 10 parts triphenylsulfonium hexafluoroantimonate and 1000 parts propylene glycol monobutyl ether;

[0037] Composition C1-4: 100 parts of the compound shown in Formula I, 20 parts of the compound shown in Formula II, and 20 parts of... 20 parts triphenylsulfonium hexafluoroantimonate and 1000 parts propylene glycol monobutyl ether;

[0038] Composition C2-1: 100 parts of the compound shown in Formula I, 1 part of the compound shown in Formula II, and 1 part of... 1 part triphenylsulfonate and 1000 parts propylene glycol monobutyl ether;

[0039] Composition C2-2: 100 parts of the compound shown in Formula I, 5 parts of the compound shown in Formula II, and 5 parts of... 5 parts triphenylsulfonate trifluoromethane sulfonate and 1000 parts propylene glycol monobutyl ether;

[0040] Composition C2-3: 100 parts of the compound shown in Formula I, 10 parts of the compound shown in Formula II, and 10 parts of... 10 parts triphenylsulfonate trifluoromethane sulfonate and 1000 parts propylene glycol monobutyl ether;

[0041] Composition C2-4: 100 parts of the compound shown in Formula I, 20 parts of the compound shown in Formula II, and 20 parts of... 20 parts of triphenylsulfonium trifluoromethane sulfonate and 1000 parts of propylene glycol monobutyl ether;

[0042] Composition C3-1 : 100 parts of the compound shown as Formula I, 1 part of the compound shown as Formula II, 1 part of 1 part of triphenylsulfonium hexafluoroantimonate and 1000 parts of propylene glycol monobutyl ether;

[0043] Composition C3-2: 100 parts of the compound shown as Formula I, 5 parts of the compound shown as Formula II, 5 parts 5 parts of triphenylsulfonium hexafluoroantimonate and 1000 parts of propylene glycol monobutyl ether;

[0044] Composition C3-3: 100 parts of the compound shown as Formula I, 10 parts of the compound shown as Formula II, 10 parts 10 parts of triphenylsulfonium hexafluoroantimonate and 1000 parts of propylene glycol monobutyl ether;

[0045] Composition C3-4: 100 parts of the compound shown as Formula I, 20 parts of the compound shown as Formula II, 20 parts 20 parts of triphenylsulfonium hexafluoroantimonate and 1000 parts of propylene glycol monobutyl ether;

[0046] Composition C4-1 : 100 parts of the compound shown as Formula I, 1 part of the compound shown as Formula II, 1 part of 1 part of triphenylsulfonium trifluoromethanesulfonate and 1000 parts of propylene glycol monobutyl ether;

[0047] Composition C4-2: 100 parts of the compound shown as Formula I, 5 parts of the compound shown as Formula II, 5 parts 5 parts of triphenylsulfonium trifluoromethanesulfonate and 1000 parts of propylene glycol monobutyl ether;

[0048] Composition C4-3: 100 parts of the compound shown as Formula I, 10 parts of the compound shown as Formula II, 10 parts 10 parts of triphenylsulfonium trifluoromethanesulfonate and 1000 parts of propylene glycol monobutyl ether;

[0049] Composition C4-4: 100 parts of the compound shown as Formula I, 20 parts of the compound shown as Formula II, 20 parts 20 parts of triphenylsulfonium trifluoromethanesulfonate and 1000 parts of propylene glycol monobutyl ether.

[0050] The bottom antireflective composition is prepared by a preparation method comprising the following steps: mixing the compound shown as Formula I (including the kind and weight parts), the crosslinking agent (including the kind and weight parts), the light absorbing agent (including the kind and weight parts), the photoacid generator (including the kind and weight parts) and the solvent (including the kind and weight parts) as described above to obtain the bottom antireflective composition.

[0051] The mixing temperature is preferably 15-35°C, for example 25°C.

[0052] The mixing method is preferably stirring, and the stirring time is preferably 30 minutes.

[0053] After mixing, a filtration step is further preferably included, and the filtration method is preferably filtration using a filter, and the pore size of the filter is preferably 0.05-0.2 μm, more preferably 0.05 μm.

[0054] The present application also provides a method for preparing a bottom anti-reflective composition, which comprises the step of mixing the components of the bottom anti-reflective composition as described above.

[0055] The conditions and operations of the method for preparing the bottom anti-reflective composition are the same as described above.

[0056] The present application also provides a method for preparing a bottom anti-reflective coating, which comprises the steps of casting the bottom anti-reflective composition as described above on a semiconductor substrate, and baking to obtain a bottom anti-reflective coating.

[0057] In the method for preparing the bottom anti-reflective coating, the casting tool is a spin coater or a coater, preferably a spin coater.

[0058] In the method for preparing the bottom anti-reflective coating, the semiconductor substrate is one of a silicon or silicon dioxide coated substrate, a silicon nitride substrate, a silicon wafer substrate, a glass substrate or an ITO substrate, preferably a silicon wafer substrate.

[0059] In the method for preparing the bottom anti-reflective coating, the baking temperature is 80-250°C, preferably 100-250°C, more preferably 190°C.

[0060] In the method for preparing the bottom anti-reflective coating, the baking time is 0.3-5 minutes, preferably 0.5-2 minutes, more preferably 1 minute.

[0061] The present application also provides a method for forming a photoresist pattern, which comprises the steps of:

[0062] S1: casting a bottom anti-reflective composition on a semiconductor substrate, and baking to obtain a bottom anti-reflective coating;

[0063] S2: applying a photoresist on the bottom anti-reflective coating;

[0064] S3: soft baking;

[0065] S4: exposing;

[0066] S5: baking;

[0067] S6: developing.

[0068] In the method for forming a photoresist pattern, the photoresist can be conventional in the art, preferably a positive photoresist, a negative photoresist, or a negative tone development (NTD) photoresist, more preferably a 193 nm positive photoresist (TOK, tai-6990PH).

[0069] In the method for forming a photoresist pattern, the soft baking temperature is 100-140°C, preferably 120°C.

[0070] In the method for forming a photoresist pattern, the soft baking time is 0.5-2 minutes, preferably 1 minute.

[0071] In the method for forming a photoresist pattern, the exposure light can be conventional in the art, preferably light having a wavelength of 13.5-248 nm, more preferably an ArF excimer laser (wavelength: 193 nm).

[0072] In the method for forming a photoresist pattern, the baking temperature is 80-150°C, preferably 100-140°C, more preferably 130°C.

[0073] In the method for forming a photoresist pattern, the baking time is 0.3-5 minutes, preferably 0.5-2 minutes, more preferably 1 minute.

[0074] In the method for forming a photoresist pattern, the developing is performed using a developing solution, and the developing solution is capable of easily dissolving and removing the bottom anti-reflective coating.

[0075] In the method for forming a photoresist pattern, the developing solution is preferably an alkaline developing solution, more preferably an aqueous solution of an alkali metal hydroxide, an aqueous solution of a tertiary ammonium hydroxide, or an aqueous solution of an amine.

[0076] In the method for forming a photoresist pattern, the aqueous solution of an alkali metal hydroxide is preferably an aqueous solution of potassium hydroxide or an aqueous solution of sodium hydroxide.

[0077] In the method for forming a photoresist pattern, the aqueous solution of a tertiary ammonium hydroxide is preferably an aqueous solution of tetramethylammonium hydroxide (TMAH), an aqueous solution of tetraethylammonium hydroxide, or an aqueous solution of choline.

[0078] In the method for forming a photoresist pattern, the aqueous solution of an amine is preferably an aqueous solution of ethanolamine, an aqueous solution of propylamine, or an aqueous solution of ethylenediamine.

[0079] In the method for forming a photoresist pattern, the developing solution is more preferably an aqueous solution of 2.38 wt% tetramethylammonium hydroxide.

[0080] In the method for forming a photoresist pattern, the developing solution can further contain a surfactant.

[0081] In the method for forming a photoresist pattern, the developing temperature is preferably 5-50°C, more preferably 25-40°C, for example 30°C.

[0082] In the method for forming a photoresist pattern, the developing time is preferably 10-300 seconds, more preferably 30-60 seconds, for example 40 seconds.

[0083] On the basis of common general knowledge in the art, the above-mentioned preferred conditions can be combined in any manner, thereby obtaining preferred embodiments of the present application.

[0084] In the present application, the room temperature is 15-35°C, preferably 25°C.

[0085] The reagents and raw materials used in the present application are commercially available.

[0086] The positive progress of the present application is that it can effectively reduce light reflection, eliminate standing wave effect, reduce LER and LWE of the pattern, improve the resolution of the pattern, avoid etching process, reduce damage of plasma to the substrate, reduce operation process, and improve production efficiency. DETAILED DESCRIPTION

[0087] The present application will be further described by way of examples, but the present application is not limited to the examples described below. In the following examples, the experimental methods not specified in the examples are selected according to conventional methods and conditions, or according to the instructions of the commercial products.

[0088] In the description of the examples, "parts" and "%" refer to "parts by weight" and "wt%", respectively, unless otherwise specified.

[0089] Preparation method of the bottom antireflection coating of Example 1

[0090] The compound as shown in Formula I, the crosslinking agent as shown in Formula II, the light absorber, the photoacid generator, and the solvent are mixed, and the types and amounts are shown in Table 1 and Table 2. The mixture is stirred at room temperature for 30 minutes, and then the mixture is filtered through a filter with a pore size of 0.05 μm to prepare a bottom antireflection composition in the form of a solution.

[0091] The prepared bottom anti-reflective composition was cast on a silicon wafer substrate by spin coating and cross-linked by heating on a vacuum hot plate at 190°C for 1 minute to prepare the following bottom anti-reflective coatings of Examples 1-16.

[0092]

[0093] Table 1 Type

[0094]

[0095] Table 2 Amount

[0096]

[0097]

[0098] Example 2 Application and Effect Example

[0099] 1. Optical property test

[0100] The refractive index (n value) and extinction coefficient (k value) of the bottom anti-reflective coating obtained by ellipsometer measurement at 193 nm.

[0101] 2. Development property test

[0102] Method for forming a photoresist pattern and development property test of the bottom anti-reflective coating when the exposure light wavelength is 193 nm

[0103] A commercially available 193 nm positive photoresist (TOK Corporation, tai-6990PH) was spin-coated on the obtained bottom anti-reflective coating. The formed resist layer was subjected to soft baking at 120°C for 1 minute on a vacuum hot plate, and then imagewise exposed to 193 nm radiation by a photomask. After post-exposure baking at 130°C for 1 minute, the resist layer was developed at 30°C using a 2.38 wt% aqueous TMAH solution for 40 seconds. As a result of this development, the photoresist layer and the underlying bottom anti-reflective coating were removed in the region defined by the photomask, and the solvent resistance of the anti-reflective coating was observed in the region exposed to radiation. The pattern cross-sectional shape was observed.

[0104] The results of the performance test of the bottom anti-reflective coatings 1-16 are shown in Table 3.

[0105] Table 3

[0106]

[0107] Note: Regarding the cross-sectional shape of the pattern: A indicates that both the photoresist and the bottom anti-reflective coating show a rectangular side surface perpendicular to the substrate surface; B indicates that both the photoresist and the bottom anti-reflective coating show a side surface which is not perpendicular to, but slightly inclined to the substrate surface, but in practice there is no problem; C indicates that both the photoresist and the bottom anti-reflective coating show a side surface which is a tessellation shape with respect to the substrate surface.

Claims

1. A bottom anti-reflective composition comprising the following components in parts by weight: 50 to 200 parts of a compound represented by Formula I, 1 to 100 parts of a crosslinking agent, 0.01 to 50 parts of a light absorbing agent, 0.01 to 50 parts of a photoacid generator, and a solvent; ###0001### Formula I which satisfies one or more of the following conditions: (1) the crosslinking agent is a vinyl ether compound; (2) the light absorbing agent is an anthracene compound containing an aromatic structure; (3) the photoacid generator is one or more of an onium salt compound, a sulfone imide derivative, and a disulfonyl diazomethane compound; (4) the solvent is one or more of an ether solvent, an ester solvent, an alcohol solvent, an aromatic hydrocarbon solvent, a ketone solvent, and an amide solvent; (5) the compound represented by Formula I is in a range of 50 to 150 parts by weight; (6) the crosslinking agent is in a range of 1 to 20 parts by weight; (7) the light absorbing agent is in a range of 1 to 20 parts by weight; (8) the photoacid generator is in a range of 1 to 20 parts by weight; and (9) the solvent is in a range of 1000 to 2500 parts by weight.

2. The bottom anti-reflective composition of claim 1, wherein, which satisfies one or more of the following conditions: (3) the compound represented by Formula I is in a range of 50 to 100 parts by weight; (4) the crosslinking agent is in a range of 1, 5, 10, or 20 parts by weight; (5) the light absorbing agent is in a range of 1, 5, 10, or 20 parts by weight; (6) the photoacid generator is in a range of 1, 5, 10, or 20 parts by weight; and (7) the solvent is in a range of 1200 to 2000 parts by weight. which satisfies one or two of the following conditions: (2) the solvent is in a range of 1500 to 1800 parts by weight, for example, 1000 parts by weight. which satisfies one or more of the following conditions: (1) the onium salt compound is one or more of an iodonium salt compound, a sulfonium salt compound, or a crosslinkable onium salt compound; (2) the sulfone imide derivative is one or more of N-(trifluoromethanesulfonyloxy)succinimide, N-(fluoro-n-butanesulfonyloxy)succinimide, N-(camphorsulfonyloxy)succinimide, and N-(trifluoromethylsulfonyloxy)naphthalene dicarboxylic imide; and (3) the disulfonyl diazomethane compound is one or more of bis(trifluoromethylsulfonyl) diazomethane, bis(cyclohexylsulfonyl) diazomethane, bis(benzenesulfonyl) diazomethane, bis(p-toluenesulfonyl) diazomethane, bis(2,4-dimethylbenzenesulfonyl) diazomethane, and methylsulfonyl-p-toluenesulfonyl diazomethane. which satisfies one or more of the following conditions: (1) the iodonium salt compound is one or more of diphenyliodonium hexafluorophosphate, diphenyliodonium trifluoromethanesulfonate, diphenyliodonium nonafluoro-n-butanesulfonate, diphenyliodonium perfluoro-n-octanesulfonate, diphenyliodonium camphorsulfonate, bis(4-tert-butylphenyl) iodonium camphorsulfonate, and bis(4-tert-butylphenyl) iodonium trifluoromethanesulfonate. ​ ​ ​ ​ ​ ​ 3. The bottom anti-reflective composition of claim 2, wherein ​ (1) said crosslinking agent is CH2=CH-O-R-CH=CH2, each R is independently selected from C 1-10 alkylene or C 1-10 alkyleneoxy; (2) the light absorber is ​ ​ ​ ​ ​ 4. The bottom anti-reflective composition of claim 3, wherein, ​ (1) the crosslinking agent is a compound as shown in formula II ​ 5. The bottom anti-reflective composition of claim 2, wherein ​ ​ ​ ​ 6. The bottom antireflective composition of claim 5, wherein ​ ​ (2) the sulfonium salt compound is one or more of triphenyl sulfonium hexafluoroantimonate, triphenyl sulfonium nonafluoro-n-butanesulfonate, triphenyl sulfonium camphor sulfonic acid salt and triphenyl sulfonium trifluoromethanesulfonate, more preferably triphenyl sulfonium hexafluoroantimonate and / or triphenyl sulfonium trifluoromethanesulfonate; (3) the cross-linkable onium salt compound is one or more of bis(4-hydroxyphenyl)(phenyl)sulfonium trifluoromethanesulfonate, bis(4-hydroxyphenyl)(phenyl)sulfonium 1,1,2,2,3,3,4,4,4-nonafluorobutane-1-sulfonate, phenyl bis(4-(2-(vinyloxy)ethoxy)-phenyl)sulfonium 1,1,2,2,3,3,4,4-octafluoro-butane-1,4-disulfonate or tris(4-(2-(vinyloxy)ethoxy)-phenyl)sulfonium 1,1,2,2,3,3,4,4-octafluoro-butane-1,4-disulfonate.

7. The bottom anti-reflective composition of claim 2, wherein one or more of which satisfy the following conditions: (1) the ether solvent is one or more of propylene glycol monobutyl ether, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether and propylene glycol monomethyl ether; preferably propylene glycol monobutyl ether; (2) the ester solvent is one or more of propylene glycol monobutyl ether acetate, methyl cellosolve acetate, ethyl cellosolve acetate, propylene glycol monomethyl ether acetate, propylene glycol propyl ether acetate, 2-hydroxypropionic acid ethyl ester, 2-hydroxy-2-methyl-propionic acid ethyl ester, ethoxy acetic acid ethyl ester, hydroxy acetic acid ethyl ester, 2-hydroxy-3-methyl butyric acid methyl ester, 3-methoxy propionic acid methyl ester, 3-methoxy propionic acid ethyl ester, 3-ethoxy propionic acid ethyl ester, 3-ethoxy propionic acid methyl ester, pyruvic acid methyl ester, pyruvic acid ethyl ester, acetic acid ethyl ester, acetic acid butyl ester, lactic acid ethyl ester and lactic acid butyl ester; (3) the alcohol solvent is propylene glycol; (4) the ketone solvent is one or more of methyl ethyl ketone, cyclopentanone and cyclohexanone; (5) the amide solvent is one or more of N,N-dimethyl formamide, N,N-dimethyl acetamide and N-methyl pyrrolidone.

8. The bottom anti-reflective composition of claim 1, wherein, The bottom anti-reflective composition is composed of the following components by weight parts: 50-200 parts of the compound of Formula I, 1-100 parts of the cross-linking agent, 0.01-50 parts of the light absorbing agent, 0.01-50 parts of the photo-acid generator and the solvent.

9. The bottom anti-reflective composition of claim 1, wherein, The composition is any one of the following compositions: (1) Composition C1-1: 100 parts of the compound represented by Formula I, 1 part of the compound represented by Formula II, 1 part of 1 part of triphenylsulfonium hexafluoroantimonate and 1000 parts of propylene glycol monobutyl ether; (2) Composition C1-2: 100 parts of the compound shown in Formula I, 5 parts of the compound shown in Formula II, and 5 parts of... 5 parts triphenylsulfonium hexafluoroantimonate and 1000 parts propylene glycol monobutyl ether; (3) Composition C1-3: 100 parts of the compound shown in Formula I, 10 parts of the compound shown in Formula II, and 10 parts of... 10 parts triphenylsulfonium hexafluoroantimonate and 1000 parts propylene glycol monobutyl ether; (4) Composition C1-4: 100 parts of the compound shown in Formula I, 20 parts of the compound shown in Formula II, and 20 parts of... 20 parts triphenylsulfonium hexafluoroantimonate and 1000 parts propylene glycol monobutyl ether; (5) Composition C2-1: 100 parts of the compound represented by Formula I, 1 part of the compound represented by Formula II, 1 part of 1 part of triphenylsulfonium trifluoromethanesulfonate and 1000 parts of propylene glycol monobutyl ether; (6) Composition C2-2: 100 parts of the compound shown in Formula I, 5 parts of the compound shown in Formula II, and 5 parts of... 5 parts triphenylsulfonate trifluoromethane sulfonate and 1000 parts propylene glycol monobutyl ether; (7) Composition C2-3: 100 parts of the compound shown in Formula I, 10 parts of the compound shown in Formula II, and 10 parts of... 10 parts triphenylsulfonate trifluoromethane sulfonate and 1000 parts propylene glycol monobutyl ether; (8) Composition C2-4: 100 parts of the compound shown in Formula I, 20 parts of the compound shown in Formula II, and 20 parts of... 20 parts of triphenylsulfonium trifluoromethane sulfonate and 1000 parts of propylene glycol monobutyl ether; (9) Composition C3-1: 100 parts of the compound represented by Formula I, 1 part of the compound represented by Formula II, 1 part of 1 part of triphenylsulfonium hexafluoroantimonate and 1000 parts of propylene glycol monobutyl ether; (10) Composition C3-2: 100 parts of the compound shown in Formula I, 5 parts of the compound shown in Formula II, and 5 parts of... 5 parts triphenylsulfonium hexafluoroantimonate and 1000 parts propylene glycol monobutyl ether; (11) Composition C3-3: 100 parts of the compound shown in Formula I, 10 parts of the compound shown in Formula II, and 10 parts of... 10 parts triphenylsulfonium hexafluoroantimonate and 1000 parts propylene glycol monobutyl ether; (12) Composition C3-4: 100 parts of the compound represented by Formula I, 20 parts of the compound represented by Formula II, 20 parts of 20 parts of triphenylsulfonium hexafluoroantimonate, and 1000 parts of propylene glycol monobutyl ether; (13) Composition C4-1 : 100 parts of the compound represented by Formula I, 1 part of the compound represented by Formula II, 1 part of 1 part of triphenylsulfonium trifluoromethanesulfonate and 1000 parts of propylene glycol monobutyl ether; (14) Composition C4-2: 100 parts of the compound shown in Formula I, 5 parts of the compound shown in Formula II, and 5 parts of... 5 parts triphenylsulfonate trifluoromethane sulfonate and 1000 parts propylene glycol monobutyl ether; (15) Composition C4-3: 100 parts of the compound shown in Formula I, 10 parts of the compound shown in Formula II, and 10 parts of... 10 parts triphenylsulfonate trifluoromethane sulfonate and 1000 parts propylene glycol monobutyl ether; (16) Composition C4-4: 100 parts of the compound represented by Formula I, 20 parts of the compound represented by Formula II, 20 parts of 20 parts of triphenylsulfonium trifluoromethanesulfonate, and 1000 parts of propylene glycol monobutyl ether.

10. The bottom antireflective composition of any of claims 1-9, wherein, The bottom anti-reflective composition is prepared by the following preparation method; the preparation method comprises the following steps: mixing the compound of Formula I according to any one of claims 1-9, the cross-linking agent according to any one of claims 1-9, the light absorbing agent according to any one of claims 1-9, the photo-acid generator according to any one of claims 1-9 and the solvent according to any one of claims 1-9 to obtain the bottom anti-reflective composition according to any one of claims 1-9; The mixing temperature is preferably 15-35°C, for example 25°C; The mixing mode is preferably stirring, and the stirring time is preferably 30 minutes; After the mixing, a filtration step is preferably further included, and the filtration is preferably carried out using a filter having a pore size of 0.05-0.2 μm, more preferably 0.05 μm.

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