Radio frequency power amplifier and radio frequency front-end module

Abstract

The embodiment of the invention provides a radio frequency power amplifier and a radio frequency front-end module. The radio frequency power amplifier comprises a first radio frequency amplification circuit, a second radio frequency amplification circuit, a first transformer, a second transformer and a coupler, the first radio frequency amplification circuit is used for outputting a first radio frequency signal, and the second radio frequency amplification circuit is used for outputting a second radio frequency signal; the first transformer comprises a first coil and a second coil, and the second transformer comprises a third coil and a fourth coil; the first coil is connected with the first radio frequency amplification circuit, and the second coil is coupled with the first coil to output a first coupling signal corresponding to the first radio frequency signal; the third coil is connected with the second radio frequency amplification circuit, and the fourth coil is coupled with the third coil to output a second coupling signal corresponding to the second radio frequency signal; the coupler is used for performing power synthesis on the first coupling signal and the second coupling signal to output a synthesized signal. The radio frequency power amplifier and the radio frequency front-end module have better bandwidth performance.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of radio frequency technology, and in particular to a radio frequency power amplifier and a radio frequency front-end module. BACKGROUND

[0002] With the rapid development of new generation information technology, such as the continuous application and popularization of the 5th Generation Mobile Communication Technology (5G), the technologies in various subfields are also constantly updated and improved. For example, with the increasing demand for working frequency bands in radio frequency technology, the performance indicators of radio frequency power amplifiers also face higher requirements. For radio frequency power amplifiers, whether the performance indicators can meet the higher requirements in new application scenarios is a key in the design of current radio frequency power amplifiers. SUMMARY

[0003] The present application provides a radio frequency power amplifier and a radio frequency front-end module, which have better bandwidth performance.

[0004] In a first aspect, an embodiment of the present application provides a radio frequency power amplifier, comprising:

[0005] A first radio frequency amplification circuit and a second radio frequency amplification circuit, the first radio frequency amplification circuit being configured to output a first radio frequency signal, and the second radio frequency amplification circuit being configured to output a second radio frequency signal;

[0006] A first transformer and a second transformer, the first transformer comprising a first coil and a second coil, and the second transformer comprising a third coil and a fourth coil; the first coil being connected to the first radio frequency amplification circuit, and the second coil being coupled to the first coil to output a first coupled signal corresponding to the first radio frequency signal; the third coil being connected to the second radio frequency amplification circuit, and the fourth coil being coupled to the third coil to output a second coupled signal corresponding to the second radio frequency signal;

[0007] A coupler, a first input end of the coupler being connected to the second coil, and a second input end of the coupler being connected to the fourth coil, the coupler being configured to perform power synthesis on the first coupled signal and the second coupled signal to output a synthesized signal.

[0008] In a second aspect, an embodiment of the present application provides a radio frequency front-end module, comprising a substrate, and a first chip, a first transformer, a second transformer and a coupler arranged on the substrate;

[0009] The first chip is provided with a first radio frequency amplification circuit and a second radio frequency amplification circuit, the first radio frequency amplification circuit is used to output a first radio frequency signal to the first transformer so that the first transformer outputs a first coupling signal, and the second radio frequency amplification circuit is used to output a second radio frequency signal to the second transformer so that the second transformer outputs a second coupling signal.

[0010] The first input end of the coupler is connected with the output end of the first transformer, the second input end of the coupler is connected with the output end of the second transformer, and the coupler is used to perform power synthesis on the first coupling signal and the second coupling signal to output a synthesized signal.

[0011] In a third aspect, the embodiments of the present application provide a radio frequency front-end module, which comprises the radio frequency power amplifier.

[0012] The radio frequency power amplifier and the radio frequency front-end module provided by the embodiments of the present application, the radio frequency power amplifier comprises a first radio frequency amplification circuit, a second radio frequency amplification circuit, a first transformer, a second transformer and a coupler; the first radio frequency amplification circuit is used to output a first radio frequency signal, and the second radio frequency amplification circuit is used to output a second radio frequency signal; the first transformer comprises a first coil and a second coil, and the second transformer comprises a third coil and a fourth coil; the first coil is connected with the first radio frequency amplification circuit, the second coil is coupled with the first coil to output a first coupling signal corresponding to the first radio frequency signal; the third coil is connected with the second radio frequency amplification circuit, and the fourth coil is coupled with the third coil to output a second coupling signal corresponding to the second radio frequency signal; the first input end of the coupler is connected with the second coil, the second input end of the coupler is connected with the fourth coil, and the coupler is used to perform power synthesis on the first coupling signal and the second coupling signal to output a synthesized signal. By setting the first transformer and the second transformer to perform impedance transformation and conversion on the radio frequency signals to be power synthesized, the radio frequency power amplifier can have better bandwidth performance.

[0013] Another embodiment of the present application provides a radio frequency front-end module, comprising a substrate, and a first chip, a first transformer, a second transformer and a coupler disposed on the substrate; the first chip is provided with a first radio frequency amplification circuit and a second radio frequency amplification circuit, the first radio frequency amplification circuit is configured to output a first radio frequency signal to the first transformer so that the first transformer outputs a first coupled signal, and the second radio frequency amplification circuit is configured to output a second radio frequency signal to the second transformer so that the second transformer outputs a second coupled signal; a first input end of the coupler is connected with an output end of the first transformer, and a second input end of the coupler is connected with an output end of the second transformer, and the coupler is configured to perform power synthesis on the first coupled signal and the second coupled signal to output a synthesized signal. By disposing the first transformer and the second transformer to perform impedance transformation and conversion on the radio frequency signals to be synthesized, the radio frequency front-end module can have better bandwidth performance.

[0014] It should be understood that the foregoing general description and the following detailed description are only exemplary and explanatory, and cannot limit the disclosure of the embodiments of the present application. BRIEF DESCRIPTION OF DRAWINGS

[0015] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings needed in the embodiment description will be briefly introduced below. Obviously, the drawings in the following description are some embodiments of the present application, and those skilled in the art can also obtain other drawings according to these drawings without creative labor.

[0016] Figure 1 is a schematic diagram of a radio frequency power amplifier provided by an embodiment of the present application;

[0017] Figure 2 is a schematic diagram of a radio frequency power amplifier in some embodiments of the present application;

[0018] Figure 3 is a schematic block diagram of a radio frequency front-end module provided by an embodiment of the present application;

[0019] Figure 4 is a schematic block diagram of a radio frequency front-end module in some embodiments of the present application;

[0020] Figure 5 is a schematic diagram of a radio frequency front-end module provided by another embodiment of the present application;

[0021] Figures 6 to 7 is a schematic block diagram of a radio frequency front-end module in some other embodiments of the present application;

[0022] Figures 8a to 8b is a schematic block diagram of a radio frequency front-end module in some other embodiments of the present application.

[0023] Reference numerals:

[0024] 10, first radio frequency amplification circuit; 20, second radio frequency amplification circuit; 30, first transformer; 31, first coil; 32, second coil; 40, second transformer; 41, third coil; 42, fourth coil; 50, coupler; 51, fifth coil; 52, sixth coil;

[0025] R1, first resistor; C1, first capacitor; C2, second capacitor; C3, third capacitor; C4, fourth capacitor; L1, first inductor; L2, second inductor; 61, first series resonance circuit; L3, third inductor; C5, fifth capacitor; 62, second series resonance circuit; L4, fourth inductor; C6, sixth capacitor; VCC1, first power supply end; VCC2, second power supply end;

[0026] 100, substrate; 200, first chip; 300, second chip; A, preset area; A1, first sub-area; A2, second sub-area; A3, third sub-area; A4, fourth sub-area. DETAILED DESCRIPTION

[0027] The technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, instead of all the embodiments of the present application. Based on the embodiments in the present application, all the other embodiments obtained by those skilled in the art without creative work fall within the scope of the present application.

[0028] It should be understood that the present application can be implemented in various forms and should not be interpreted in a limited way based on the embodiments presented herein. On the contrary, the embodiments are presented to make the disclosure complete and complete, and to fully convey the scope of the present application to those skilled in the art. In the drawings, the size and relative size of the layers and regions may be exaggerated for clarity throughout the same reference numerals represent the same elements.

[0029] In order to thoroughly understand the present application, detailed structures and steps will be presented in the following description in order to explain the technical solutions presented by the present application. In addition to these detailed descriptions, the preferred embodiments of the present application are described in detail as follows.

[0030] Some embodiments of the present application will be described in detail below with reference to the drawings. The following embodiments and features in the embodiments can be combined with each other without conflict.

[0031] Please refer to Figure 1 , Figure 1 is a schematic block diagram of a radio frequency power amplifier provided by the embodiments of the present application.

[0032] The radio frequency power amplifier can be applied to a radio frequency front-end module. The radio frequency front-end module is an element that integrates two or more than two discrete devices such as a radio frequency switch, a low noise amplifier, a coupler 50, a filter, a duplexer, a radio frequency power amplifier, and the like into an independent module, thereby improving the integration and hardware performance and miniaturizing the size. Specifically, the radio frequency front-end module can be applied to a communication device such as a smart phone, a tablet computer, a smart watch, and the like. The radio frequency front-end module is, for example, a radio frequency front-end module applied to a communication device such as LTE (Long Term Evolution, LTE for short), 5G, and the like.

[0033] As shown in FIG. 1, Figure 1 The radio frequency power amplifier includes a first radio frequency amplification circuit 10, a second radio frequency amplification circuit 20, a first transformer 30, a second transformer 40, and a coupler 50.

[0034] The first radio frequency amplification circuit 10 is configured to output a first radio frequency signal, and the second radio frequency amplification circuit 20 is configured to output a second radio frequency signal.

[0035] For example, the first radio frequency amplification circuit 10 can amplify a radio frequency signal input into the first radio frequency amplification circuit 10 to obtain the first radio frequency signal, and the second radio frequency amplification circuit 20 can amplify a radio frequency signal input into the second radio frequency amplification circuit 20 to obtain the second radio frequency signal. As shown in FIG. 1, Figure 1 The first radio frequency amplification circuit 10 and the second radio frequency amplification circuit 20 are both single-ended power amplification circuits; in other embodiments, the first radio frequency amplification circuit 10 and the second radio frequency amplification circuit 20 can also be both differential power amplification circuits; and the specific type of the first radio frequency amplification circuit 10 and the second radio frequency amplification circuit 20 is not limited in the present embodiment. For the convenience of description, the present embodiment is mainly described by taking the first radio frequency amplification circuit 10 and the second radio frequency amplification circuit 20 as single-ended power amplification circuits.

[0036] In some embodiments, the phase of the first radio frequency signal is 90 degrees different from the phase of the second radio frequency signal. The radio frequency power amplifier further includes a 90-degree power divider. A first output end of the 90-degree power divider is connected to an input end of the first radio frequency amplification circuit 10, and a second output end of the 90-degree power divider is connected to an input end of the second radio frequency amplification circuit 20. The 90-degree power divider is configured to divide a radio frequency signal input into the input end into two equal-amplitude radio frequency signals with a phase difference of 90 degrees. One of the two radio frequency signals is amplified by the first radio frequency amplification circuit 10 to obtain the first radio frequency signal, and the other radio frequency signal is amplified by the second radio frequency amplification circuit 20 to obtain the second radio frequency signal.

[0037] As shown in FIG. 1, Figure 1 andFigure 2 As shown, the first transformer 30 includes a first coil 31 and a second coil 32, and the second transformer 40 includes a third coil 41 and a fourth coil 42; the first coil 31 is connected with the first radio frequency amplification circuit 10, and the second coil 32 is coupled with the first coil 31 to output a first coupled signal corresponding to the first radio frequency signal; the third coil 41 is connected with the second radio frequency amplification circuit 20, and the fourth coil 42 is coupled with the third coil 41 to output a second coupled signal corresponding to the second radio frequency signal.

[0038] The coupling of the first coil 31 and the second coil 32 can realize impedance conversion of the first radio frequency signal, and the coupling of the third coil 41 and the fourth coil 42 can realize impedance conversion of the second radio frequency signal.

[0039] In some embodiments, the first transformer 30 and the second transformer 40 can also perform voltage conversion on the first radio frequency signal and the second radio frequency signal.

[0040] In some embodiments, as shown in Figure 2 The turns ratio k of the first transformer 30 is equal to the turns ratio k of the second transformer 40 to ensure the balance performance of the radio frequency power amplifier.

[0041] For example, the turns ratio k of the first transformer 30 ranges from 1:3 to 1:6, for example, can be 1:4 or 1:5. Similarly, the turns ratio k of the second transformer 40 ranges from 1:3 to 1:6, for example, can be 1:4 or 1:5. By using the first transformer 30 and the second transformer 40 with a larger turns ratio k, and the turns ratio k of the first transformer 30 being equal to the turns ratio k of the second transformer 40, the bandwidth performance of the radio frequency power amplifier can be improved while ensuring the balance performance of the radio frequency power amplifier.

[0042] For example, as shown in Figure 1 and Figure 2 The first radio frequency amplification circuit 10 and the second radio frequency amplification circuit 20 are both single-ended power amplification circuits. The first end of the first coil 31 is connected with the first radio frequency amplification circuit 10, and the second end of the first coil 31 is grounded; the first end of the third coil 41 is connected with the second radio frequency amplification circuit 20, and the second end of the third coil 41 is grounded.

[0043] In some embodiments, the first radio frequency amplification circuit 10 and the second radio frequency amplification circuit 20 are differential power amplification circuits. For example, the first radio frequency amplification circuit 10 includes a first sub-amplification circuit and a second sub-amplification circuit, and the second radio frequency amplification circuit 20 includes a third sub-amplification circuit and a fourth sub-amplification circuit. The first end of the first coil 31 is connected to the output end of the first sub-amplification circuit, and the second end of the first coil 31 is connected to the output end of the second sub-amplification circuit. The first end of the third coil 41 is connected to the output end of the third sub-amplification circuit, and the second end of the first coil 31 is connected to the output end of the fourth sub-amplification circuit.

[0044] Specifically, the first input end of the coupler 50 is connected to the second coil 32, and the second input end of the coupler 50 is connected to the fourth coil 42. The coupler 50 is used to perform power synthesis on the first coupling signal and the second coupling signal to output a synthesized signal.

[0045] In some embodiments, referring to Figure 1 or Figure 2 the first end of the second coil 32 in the first transformer 30 is connected to the first input end of the coupler 50, and the second end of the second coil 32 is grounded. The first end of the fourth coil 42 in the second transformer 40 is connected to the second input end of the coupler 50, and the second end of the fourth coil 42 is grounded.

[0046] By setting the first transformer 30 and the second transformer 40 to perform impedance transformation and conversion on the radio frequency signals to be synthesized, the radio frequency power amplifier can have better bandwidth performance.

[0047] In some embodiments, the coupler 50 includes a Hybrid 90° bridge (or can be referred to as a 90-degree hybrid coupler 50), which can perform quadrature power synthesis on the first coupling signal and the second coupling signal to output a synthesized signal. For example, the Hybrid 90° bridge includes but is not limited to at least one of the following structures: Branch-Line Coupler, Wilkinson divider-based quadrature hybrid, Lange, Quadrature Hybrid Couplers, and of course is not limited to this.

[0048] In some embodiments, the radio frequency power amplifier is a Doherty amplifier, the first radio frequency amplification circuit 10 is a carrier amplification circuit, and the second radio frequency amplification circuit 20 is a peak amplification circuit. Alternatively, the radio frequency power amplifier is a balanced amplifier.

[0049] In some embodiments, the radio frequency power amplifier is a Doherty amplifier, the first radio frequency amplification circuit 10 is a carrier amplification circuit, and the second radio frequency amplification circuit 20 is a peaking amplification circuit. Of course, the first radio frequency amplification circuit 10 can also be a peaking amplification circuit, and the second radio frequency amplification circuit 20 can also be a carrier amplification circuit.

[0050] The above embodiments can not only improve the problem of gain amplitude and phase amplitude deterioration of the radio frequency power amplifier, but also improve the linear power backoff of the radio frequency power amplifier, thereby improving the power added efficiency of the radio frequency power amplifier, and also enabling the radio frequency power amplifier to have high efficiency, wide frequency band and high power handling capability, thereby improving the power amplification performance and adaptability of the radio frequency power amplifier.

[0051] In other embodiments, the radio frequency power amplifier is a balanced amplifier. For example, when the radio frequency power amplifier is a balanced amplifier, the first radio frequency amplification circuit 10 and the second radio frequency amplification circuit 20 are the same type of amplification circuit, for example, the first radio frequency amplification circuit 10 and the second radio frequency amplification circuit 20 are both single-ended power amplification circuits, or both are differential power amplification circuits.

[0052] The above embodiments can not only improve the problem of gain amplitude and phase amplitude deterioration of the radio frequency power amplifier, but also improve the linear power backoff of the radio frequency power amplifier, thereby improving the power added efficiency of the radio frequency power amplifier, and also enabling the radio frequency power amplifier to have high efficiency, wide frequency band and high power handling capability, thereby improving the power amplification performance and adaptability of the radio frequency power amplifier.

[0053] For example, as shown in FIG. 5, the coupler 50 includes a fifth coil 51 and a sixth coil 52. The first end of the fifth coil 51 is connected to the second coil 32, the first end of the sixth coil 52 is connected to the fourth coil 42, the second end of the sixth coil 52 is grounded through a first resistor R1, and the second end of the fifth coil 51 is used to output a synthesized signal. Figure 2 The fifth coil 51 and the sixth coil 52 can be used as a Hybrid 90° bridge. Due to the phase-shifting function of the Hybrid 90° bridge, the first coupled signal and the second coupled signal are in-phase superposition at the second end of the fifth coil 51, and are in anti-phase cancellation at the second end of the sixth coil 52, thereby realizing orthogonal power synthesis of the first coupled signal and the second coupled signal.

[0054] The first resistor R1 can be referred to as an isolation resistor, which can reduce the influence of the standing wave at the antenna port at the second end of the fifth coil 51 on the radio frequency power amplifier, such as reducing the influence of the standing wave on the first radio frequency amplification circuit 10 and the second radio frequency amplification circuit 20.

[0055] In some embodiments, the coupler 50 refers to a coupler capable of achieving 90° phase synthesis, such as using a coupler 50 as shown in Figure 2 Compared with using a 90-degree phase shifter for synthesis, the present embodiment can prevent providing additional insertion loss to one of the signals, resulting in poor synthesis effect; compared with using a quarter wavelength transmission line, the present embodiment can reduce the occupied area of the coupler 50, and also prevent providing additional insertion loss to one of the signals. The present embodiment can enable the first coupled signal and the second coupled signal to be power synthesized under the condition of equal amplitude and 90° phase difference, resulting in better synthesis effect and smaller occupied area.

[0056] In some embodiments, as shown in Figure 2 The first coil 31 is connected in series with the first capacitor C1, and the third coil 41 is connected in series with the second capacitor C2; and / or the second coil 32 is connected in series with the third capacitor C3, and the fourth coil 42 is connected in series with the fourth capacitor C4. For example, the first capacitor C1 is connected in series between the first radio frequency amplification circuit 10 and the first coil 31, and the second capacitor C2 is connected in series between the second radio frequency amplification circuit 20 and the third coil 41; the second end of the second coil 32 is grounded through the third capacitor C3, and the second end of the fourth coil 42 is grounded through the fourth capacitor C4; of course, it is not limited thereto, for example, the second end of the first coil 31 is grounded through the first capacitor C1, and the second end of the third coil 41 is grounded through the second capacitor C2.

[0057] The first capacitor C1 can isolate the direct current component in the first radio frequency signal, and the second capacitor C2 can isolate the direct current component in the second radio frequency signal, or the first capacitor C1 and the second capacitor C2 can be referred to as DC isolation capacitors. The first capacitor C1 can also match the component of the required frequency in the first radio frequency signal with the first coil 31, and the second capacitor C2 can also match the component of the required frequency in the second radio frequency signal with the third coil 41, so that the radio frequency power amplifier has a better matching bandwidth and reduces the insertion loss of the matching network. For example, the resonant frequency of the first capacitor C1 and the first coil 31 is at least one frequency (for example: fundamental frequency) required in the first coupled signal, and the resonant frequency of the second capacitor C2 and the third coil 41 is at least one frequency (for example: fundamental frequency) required in the second coupled signal.

[0058] The third capacitor C3 can match the components of the required frequency in the first coupled signal with the second coil 32, and the fourth capacitor C4 can match the components of the required frequency in the second coupled signal with the fourth coil 42, so that the radio frequency power amplifier has a better matching bandwidth and reduces the insertion loss of the matching network. For example, the resonant frequency of the third capacitor C3 and the second coil 32 is at least one of the required frequencies (for example: the fundamental frequency) in the first coupled signal, and the resonant frequency of the fourth capacitor C4 and the fourth coil 42 is at least one of the required frequencies (for example: the fundamental frequency) in the second coupled signal.

[0059] For example, as shown in Figure 2 The output end of the first radio frequency amplification circuit 10 is connected to the first power supply end VCC1 through the first inductor L1, and the output end of the second radio frequency amplification circuit 20 is connected to the second power supply end VCC2 through the second inductor L2. Optionally, the voltage of the first power supply end VCC1 and the voltage of the second power supply end VCC2 are equal. The first inductor L1 can be used as the power supply inductor of the first radio frequency amplification circuit 10, and the second inductor L2 can be used as the power supply inductor of the second radio frequency amplification circuit 20; the first inductor L1 can also match the first radio frequency signal, and the second inductor L2 can also match the second radio frequency signal to obtain a better matching bandwidth.

[0060] For example, as shown in Figure 2 The output end of the first radio frequency amplification circuit 10 is connected to the first power supply end VCC1 through the first inductor L1, and the output end of the second radio frequency amplification circuit 20 is connected to the second power supply end VCC2 through the second inductor L2. Optionally, the voltage of the first power supply end VCC1 and the voltage of the second power supply end VCC2 are equal. The first inductor L1 can be used as the power supply inductor of the first radio frequency amplification circuit 10, and the second inductor L2 can be used as the power supply inductor of the second radio frequency amplification circuit 20; the first inductor L1 can also match the first radio frequency signal, and the second inductor L2 can also match the second radio frequency signal to obtain a better matching bandwidth.

[0061] For example, the first series resonance circuit 61 includes a third inductor L3 and a fifth capacitor C5, and the resonant frequency of the first series resonance circuit 61 is at least one of the frequencies not required in the first radio frequency signal; the second series resonance circuit 62 includes a fourth inductor L4 and a sixth capacitor C6, and the resonant frequency of the second series resonance circuit 62 is at least one of the frequencies not required in the second radio frequency signal. Optionally, the third inductor L3 and the fifth capacitor C5, and the fourth inductor L4 and the sixth capacitor C6 each form a second harmonic trap to reduce the second harmonic component in the corresponding radio frequency signal, so that the radio frequency power amplifier has a better matching bandwidth and reduces the insertion loss of the matching network.

[0062] For example, as shown in Figure 2The single-ended first transformer 30 and the single-ended second transformer 40 can be integrated with a multi-stage inductance-capacitance (LC) network. For example, the first transformer 30 is integrated with an inductance-capacitance network including at least two of the first coil 31 and the first capacitor C1, the second coil 32 and the third capacitor C3, and the third inductor L3 and the fifth capacitor C5. The radio frequency power amplifier can have a better matching bandwidth, a lower insertion loss of the matching network, and an increased matching bandwidth. Compared with related technologies of implementing a multi-stage LC matching through a surface mount technology or distributed components on the substrate 100, the embodiments of the present application are beneficial to miniaturization of the radio frequency power amplifier, for example, the radio frequency power amplifier can have a reduced area occupied in the radio frequency front-end module.

[0063] The radio frequency power amplifier provided by the embodiments of the present application includes a first radio frequency amplification circuit 10, a second radio frequency amplification circuit 20, a first transformer 30, a second transformer 40, and a coupler 50. The first radio frequency amplification circuit 10 is configured to output a first radio frequency signal, and the second radio frequency amplification circuit 20 is configured to output a second radio frequency signal. The first transformer 30 includes a first coil 31 and a second coil 32, and the second transformer 40 includes a third coil 41 and a fourth coil 42. The first coil 31 is connected to the first radio frequency amplification circuit 10, and the second coil 32 is coupled to the first coil 31 to output a first coupled signal corresponding to the first radio frequency signal. The third coil 41 is connected to the second radio frequency amplification circuit 20, and the fourth coil 42 is coupled to the third coil 41 to output a second coupled signal corresponding to the second radio frequency signal. A first input end of the coupler 50 is connected to the second coil 32, and a second input end of the coupler 50 is connected to the fourth coil 42. The coupler 50 is configured to perform power synthesis on the first coupled signal and the second coupled signal to output a synthesized signal. The first transformer 30 and the second transformer 40 are configured to perform impedance transformation and conversion on the radio frequency signals to be synthesized, so that the radio frequency power amplifier has better bandwidth performance.

[0064] Please refer to the foregoing embodiments Figure 3 As Figure 3 The radio frequency front-end module includes the radio frequency power amplifier.

[0065] In some embodiments, the radio frequency front-end module can further include a radio frequency switch, a low-noise amplifier, a filter, a duplexer, etc., which can be integrated into one module, thereby improving the integration and performance and miniaturizing the volume.

[0066] In some embodiments, as Figure 4As shown, the radio frequency front-end module includes a substrate 100 and radio frequency front-end circuits arranged on the substrate 100. The radio frequency front-end circuits can include a switch circuit, a filter, a radio frequency power amplifier, a low noise amplifier, etc. between a radio frequency receiving port RX, a radio frequency transmitting port TX of a radio frequency transceiver chip and an antenna link module, and form a radio frequency signal transmission path through the above radio frequency devices. The baseband chip is used to perform digital baseband signal processing and encode and decode the digital baseband signal. The radio frequency transceiver chip is used to perform conversion between the digital baseband signal and the analog radio frequency signal, process the digital baseband signal transmitted by the baseband chip into the analog radio frequency signal and then transmit the analog radio frequency signal to the radio frequency front-end circuit, or receive the analog radio frequency signal transmitted by the radio frequency front-end circuit and convert the analog radio frequency signal into the digital baseband signal and then transmit the digital baseband signal to the baseband chip. The radio frequency front-end circuit selects to transmit the analog radio frequency signal to the antenna link module or receive the analog radio frequency signal from the antenna link module, and realizes amplification, filtering and other processing of the analog radio frequency signal. The antenna link module includes an external antenna to realize receiving or transmitting the analog radio frequency signal.

[0067] The specific principle and implementation manner of the radio frequency front-end module provided by the embodiments of the present application are similar to those of the radio frequency power amplifier of the foregoing embodiments, which will not be described herein again.

[0068] Please refer to Figure 5 , Figure 5 As shown in the schematic block diagram of a radio frequency front-end module provided by some other embodiments of the present application.

[0069] The radio frequency front-end module includes a substrate 100 and a first chip 200, a first transformer 30, a second transformer 40 and a coupler 50 arranged on the substrate 100. The substrate 100 is, for example, a radio frequency substrate 100.

[0070] The first chip 200 is provided with a first radio frequency amplification circuit 10 and a second radio frequency amplification circuit 20 (not shown in the figure). The first radio frequency amplification circuit 10 is used to output a first radio frequency signal to the first transformer 30 so that the first transformer 30 outputs a first coupled signal. The second radio frequency amplification circuit 20 is used to output a second radio frequency signal to the second transformer 40 so that the second transformer 40 outputs a second coupled signal. A first input end of the coupler 50 is connected with an output end of the first transformer 30, and a second input end of the coupler 50 is connected with an output end of the second transformer 40. The coupler 50 is used to perform power synthesis on the first coupled signal and the second coupled signal to output a synthesized signal. By arranging the first transformer 30 and the second transformer 40 to perform impedance transformation and conversion on the radio frequency signals to be synthesized, the radio frequency power amplifier can have better bandwidth performance.

[0071] In some embodiments, please refer to Figure 6The first chip 200, the first transformer 30, the second transformer 40 and the coupler 50 are arranged in a preset area A of the substrate 100, and the preset area A is rectangular, such as a rectangle or a square.

[0072] As shown in Figure 6 , the preset area A includes a first sub-area A1, a second sub-area A2, a third sub-area A3 and a fourth sub-area A4, wherein the first sub-area A1 and the fourth sub-area A4 are located on a first diagonal line of the preset area A, and the second sub-area A2 and the third sub-area A3 are located on a second diagonal line of the preset area A; wherein the first diagonal line intersects the second diagonal line, for example, the first diagonal line is a diagonal line from the upper left corner to the lower right corner of the preset area A in Figure 6 , and the second diagonal line is a diagonal line from the upper right corner to the lower left corner of the preset area A in Figure 6 ; or in other words, the first sub-area A1, the second sub-area A2, the third sub-area A3 and the fourth sub-area A4 of the preset area A are arranged in a field-shaped layout.

[0073] The first chip 200, the first transformer 30, the second transformer 40 and the coupler 50 are arranged in different sub-areas in the preset area A. In some embodiments, as shown in Figure 6 , the first transformer 30 and the second transformer 40 are arranged in the first sub-area A1 and the fourth sub-area A4 respectively, and the first chip 200 and the coupler 50 are arranged in the third sub-area A3 and the second sub-area A2 respectively.

[0074] In some embodiments, the substrate 100 is a rectangular substrate, which can be divided into a first area and a second area in the length direction, such as into an upper area and a lower area, wherein the upper area is referred to as the first area, and the lower area is referred to as the second area; the first chip 200, the first transformer 30, the second transformer 40 and the coupler 50 are arranged in the first area; please refer to Figure 6 or Figure 7 The first chip 200, the first transformer 30, the second transformer 40 and the coupler 50 are arranged in the first area on the upper side of the rectangular substrate, and the ratio between the occupied area of the first area and the total area of the substrate is less than or equal to 0.5; thereby the layout of the components and chips on the substrate can be more compact, and other components can be arranged in the second area of the lower half of the substrate 100, thereby improving the isolation degree between the components and chips.

[0075] For example, the layout of the first chip 200, the first transformer 30, the second transformer 40 and the coupler 50 on the substrate 100 can also be as shown in Figure 8a or Figure 8b ; please refer to Figure 6 , and Figure 8a or Figure 8b , compared withFigure 8a or Figure 8b The layout shown is as follows: Figure 6 The grid-like layout shown can save the area occupied by the substrate 100, which has a significant area advantage.

[0076] for Figure 8a In the layout shown, the first chip 200, the first transformer 30, the second transformer 40, and the coupler 50 occupy a larger area along the length of the substrate 100. For example, they occupy not only the upper half but also the lower half of the substrate 100, which is not conducive to the layout of other devices on the substrate 100. Figure 8b In the layout shown, the first chip 200, the first transformer 30, the second transformer 40, and the coupler 50 occupy a larger area in the width direction of the substrate 100, which is relatively smaller than the width of the substrate 100. Figure 6 The wider width of the intermediate substrate 100 (shown as dashed lines) is not conducive to the miniaturization of the RF front-end module. It can be determined that arranging the first chip 200, the first transformer 30, the second transformer 40, and the coupler 50 in a grid pattern can save the area occupied by the substrate 100, and also facilitate the optimization of the layout of other devices, which is beneficial to the miniaturization of the RF front-end module.

[0077] For example, such as Figure 6 or Figure 7 As shown, a first transformer 30 is disposed on a first side of a first chip 200, and a second transformer 40 is disposed on a second side of the first chip 200; wherein the first side of the first chip 200 is disposed along a first direction; the second transformer 40 is disposed on the second side of the first chip 200, and the second side of the first chip 200 is disposed along a second direction; wherein the first direction and the second direction intersect; preferably, the first direction and the second direction are perpendicular. For example, the first direction is... Figure 7 In the horizontal direction, the first transformer 30 is positioned above the first chip 200, and in the second direction... Figure 7 In the vertical direction, the second transformer 40 is located to the right of the first chip 200.

[0078] For example, such as Figure 6 or Figure 7As shown, the angle between the arrangement direction of the first transformer 30 and the coupler 50 and the first direction is less than or equal to 45 degrees, and the angle between the arrangement direction of the second transformer 40 and the coupler 50 and the second direction is less than or equal to 45 degrees; preferably, both are less than 30 degrees. More preferably, the arrangement direction of the first transformer 30 and the coupler 50 is parallel to the first direction, and the arrangement direction of the second transformer 40 and the coupler 50 is parallel to the second direction. For example, the first transformer 30 and the coupler 50 are arranged laterally, with the coupler 50 located to the right of the first transformer 30, and the second transformer 40 and the coupler 50 are arranged longitudinally, with the coupler 50 located above the second transformer 40. The grid-like arrangement of the first chip 200, the first transformer 30, the second transformer 40, and the coupler 50 can save area on the substrate 100, facilitate the optimization of the layout of other devices, and promote the miniaturization of the RF front-end module.

[0079] For example, such as Figure 6 or Figure 7 As shown, the first chip 200 has adjacent first side (such as the upper side) and second side (such as the right side). The first transformer 30 is disposed adjacent to the first side, and the second transformer 40 is disposed adjacent to the second side. The coupler 50 is disposed in a preset direction of the first chip 200, and the coupler 50 is disposed adjacent to the first transformer 30 and the second transformer 40. The preset direction of the first chip 200 is the direction of the line connecting the center of the first chip 200 to the intersection of the first side and the second side; for example, the coupler 50 is disposed in the upper right of the first chip 200. The grid-like arrangement of the first chip 200, the first transformer 30, the second transformer 40, and the coupler 50 can save the area occupied by the substrate 100, and can also facilitate the optimization of the layout of other devices, which is beneficial to the miniaturization of the RF front-end module.

[0080] like Figure 6 or Figure 7 As shown, the arrangement direction of the first transformer 30 and the first chip 200 intersects with the arrangement direction of the second transformer 40 and the first chip 200; preferably, the arrangement direction of the first transformer 30 and the first chip 200 is perpendicular to the arrangement direction of the second transformer 40 and the first chip 200. For example, when the phase of the first radio frequency signal differs from the phase of the second radio frequency signal by 90 degrees, the direction of the first radio frequency signal between the first chip 200 and the first transformer 30 and the direction of the first radio frequency signal between the first chip 200 and the second transformer 40 are perpendicular, which can reduce radio frequency signal interference and give the radio frequency front-end module better bandwidth performance.

[0081] In some implementations, such as Figure 7As shown, the first transformer 30 includes a first coil 31 and a second coil 32, the second transformer 40 includes a third coil 41 and a fourth coil 42, and the coupler 50 includes a fifth coil 51 and a sixth coil 52. The first coil 31, the second coil 32, the third coil 41, the fourth coil 42, the fifth coil 51, and the sixth coil 52 are each formed on a metal layer of the substrate 100.

[0082] For example, the first coil 31 and the second coil 32 in the first transformer 30 can be formed on the same metal layer of the substrate 100, as shown in FIG. 2A. In another example, the first coil 31 and the second coil 32 in the first transformer 30 can be formed on different metal layers of the substrate 100, as shown in FIG. 2B. Figure 7 As shown, the first coil 31 and the second coil 32 on the same metal layer are spaced apart to improve the coupling degree of the first coil 31 and the second coil 32 and reduce the insertion loss. In other embodiments, the first coil 31 and the second coil 32 can also be formed on different metal layers of the substrate 100, for example, the first coil 31 is formed on a first metal layer of the substrate 100, and the second coil 31 is formed on a second metal layer of the substrate 100, and a projection of the first coil 31 on the second metal layer at least partially overlaps the second coil 31 to improve the coupling degree of the first coil 31 and the second coil 32 and reduce the insertion loss.

[0083] The structures of the two coils of the second transformer 40 and the two coils of the coupler 50 can refer to the structures of the two coils of the first transformer 30, which will not be described herein. It should be noted that the metal layers on which the coils in the first transformer 30, the second transformer 40, and the coupler 50 are located can be the same, different, or partially the same.

[0084] Optionally, the coil width of the fifth coil 51 and / or the sixth coil 52 is greater than the coil width of any of the first coil 31, the second coil 32, the third coil 41, and the fourth coil 42. By increasing the width of the coils in the coupler 50, the coupling degree and the inductance can be increased, and the insertion loss can be reduced, so that the radio frequency front-end module has better bandwidth performance.

[0085] Optionally, the outermost coil of the first transformer 30 is the first coil 31, and the outermost coil of the second transformer 40 is the third coil 41. By arranging the primary coil of the transformer at least partially outside the secondary coil, the coupling degree can be improved, the insertion loss can be reduced, and the radio frequency front-end module has better bandwidth performance.

[0086] In some embodiments, the first chip 200 can be an HBT (Hetero Junction Bipolar Transistor) chip, and the first chip 200 can further be provided with an inductor and / or a capacitor. Please refer to FIG. 3. Figure 2The first chip 200 may include at least one of the following: a first capacitor C1, a second capacitor C2, a third capacitor C3, a fourth capacitor C4, a first inductor L1, a second inductor L2, a third inductor L3, a fifth capacitor C5, a fourth inductor L4, and a sixth capacitor C6. Integrating these inductors and / or capacitors into the first chip 200 facilitates the placement of the first transformer 30, the second transformer 40, and the coupler 50 on the substrate 100. For example, these inductors and / or capacitors on the first chip 200 can be connected to the first transformer 30 and the second transformer 40 on the substrate 100 via bonding wires.

[0087] For example, please refer to Figure 2 The second terminal of the sixth coil 52 is grounded through the first resistor R1; as Figure 7 As shown, the first resistor R1 can be disposed in the edge region of the substrate 100, and the second end of the sixth coil is disposed close to the first resistor relative to the second end of the fifth coil. The first resistor R1 can be connected to the second end of the sixth coil 52 via bonding wires or traces disposed on the substrate, thereby reducing excessive losses caused by excessively long bonding wires or traces when the first resistor R1 and the sixth coil are connected. Furthermore, by disposing of the first resistor R1 in the edge region of the substrate 100, it is convenient to arrange the first transformer 30, the second transformer 40, and the coupler 50 in a predetermined area A of the substrate 100.

[0088] In some implementations, such as Figure 7 As shown, the RF front-end module also includes a second chip 300. An RF switch is disposed on the second chip 300. For example, the first terminal of the RF switch is connected to the output terminal of the coupler 50 (e.g., ...). Figure 2 The ANT in the coupler is connected. The second end of the RF switch is used to connect the antenna. When the RF switch is turned on, the combined signal output from the coupler 50 is transmitted to the antenna.

[0089] For example, such as Figure 7 As shown, the output terminal of coupler 50 is located in the central region formed by the fifth coil 51 and the sixth coil 52 of coupler 50, and the output terminal of coupler 50 is connected to the RF switch via a bonding wire. Connecting the RF switch of the second chip 300 from the central region of coupler 50 via a bonding wire can reduce the wiring length.

[0090] For example, the first chip 200 and the second chip 300 may employ different processes. For instance, the first chip 200 may employ an HBT process, also known as an HBT chip, while the second chip 300 may employ a CMOS process, also known as a CMOS (Complementary Metal Oxide Semiconductor) chip.

[0091] The specific principles and implementation manners of the radio frequency front-end module provided in the embodiments of the present application are similar to those of the radio frequency power amplifier and the radio frequency front-end module in the foregoing embodiments, which will not be repeated here.

[0092] It should be understood that the terms used in this application are only for the purpose of describing specific embodiments and are not intended to limit the present application.

[0093] It should be understood that when an element or layer is referred to as being "on", "adjacent", "connected to", or "coupled to" another element or layer, it can be directly on, adjacent, connected or coupled to the other element or layer, or intervening elements or layers can be present. In contrast, when an element is referred to as being "directly on", "directly adjacent", "directly connected to", or "directly coupled to" another element or layer, then there are no intervening elements or layers present. It will be appreciated that, although terms such as first, second, third, etc. can be used herein to describe various elements, components, regions, layers and / or sections, these elements, components, regions, layers and / or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Therefore, a first element, component, region, layer or section discussed below can be represented as a second element, component, region, layer or section without departing from the teachings of the present application.

[0094] Spatial relationship terms such as "below", "under", "lower", "underneath", "above", "upper" and the like can be used herein for ease of description to describe the relationship of one element or feature to another element(s) or feature(s) as illustrated in the drawings. It will be understood that the spatial relationship terms are also intended to include different orientations of the device in use and / or operation in addition to the orientation depicted in the drawings. For example, if the device in the drawings is turned over, then the element or feature that is described as "below" or "under" or "in" the other element or feature would then be oriented "above" the other element or feature. Thus, the exemplary term "below" and "under" can encompass both an orientation of above and below. The device can be otherwise oriented (rotated 90 degrees or at other orientations) and the spatial descriptions used herein interpreted accordingly.

[0095] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and / or "comprising", when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0096] The above description is embodied in a specific embodiment of the application, but the scope of protection of the application is not limited thereto. Any person skilled in the art can easily think of various equivalent modifications or replacements within the technical scope disclosed by the application, and these modifications or replacements should be covered by the scope of protection of the application. Therefore, the scope of protection of the application should be subject to the scope of protection of the claims.

Claims

1. A radio frequency power amplifier, characterized by, The radio frequency power amplifier comprises: a first radio frequency amplification circuit and a second radio frequency amplification circuit, the first radio frequency amplification circuit being configured to output a first radio frequency signal, and the second radio frequency amplification circuit being configured to output a second radio frequency signal; a first transformer and a second transformer, the first transformer comprising a first coil and a second coil, and the second transformer comprising a third coil and a fourth coil; the first coil being connected to the first radio frequency amplification circuit, and the second coil being coupled to the first coil to output a first coupled signal corresponding to the first radio frequency signal; the third coil being connected to the second radio frequency amplification circuit, and the fourth coil being coupled to the third coil to output a second coupled signal corresponding to the second radio frequency signal; a coupler, a first input end of the coupler being connected to the second coil, and a second input end of the coupler being connected to the fourth coil, the coupler being configured to perform power synthesis on the first coupled signal and the second coupled signal to output a synthesized signal.

2. The radio frequency power amplifier of claim 1, wherein, a first end of the first coil is connected to the first radio frequency amplification circuit, and a second end of the first coil is grounded; a first end of the second coil is connected to the first input end of the coupler, and a second end of the second coil is grounded; a first end of the third coil is connected to the second radio frequency amplification circuit, and a second end of the third coil is grounded; a first end of the fourth coil is connected to the second input end of the coupler, and a second end of the fourth coil is grounded.

3. The radio frequency power amplifier of claim 2, wherein, the first coil is connected in series with a first capacitor, and the third coil is connected in series with a second capacitor; and / or the second coil is connected in series with a third capacitor, and the fourth coil is connected in series with a fourth capacitor.

4. The radio frequency power amplifier of claim 2, wherein, an output end of the first radio frequency amplification circuit is connected to a first power supply end through a first inductor, and an output end of the second radio frequency amplification circuit is connected to a second power supply end through a second inductor; and / or the output end of the first radio frequency amplification circuit is grounded through a first series resonance circuit, and the output end of the second radio frequency amplification circuit is grounded through a second series resonance circuit.

5. The radio frequency power amplifier of claim 1, wherein, the coupler comprises a fifth coil and a sixth coil, a first end of the fifth coil being connected to the second coil, and a first end of the sixth coil being connected to the fourth coil, a second end of the sixth coil being grounded through a first resistor, and a second end of the fifth coil being configured to output the synthesized signal.

6. The radio frequency power amplifier of claim 1, wherein, the coupler comprises a Hybrid 90° bridge.

7. The radio frequency power amplifier of claim 1, wherein, a phase of the first radio frequency signal is different from a phase of the second radio frequency signal by 90 degrees.

8. The radio frequency power amplifier of any of claims 1-7, wherein, a turns ratio of the first transformer is equal to a turns ratio of the second transformer; the turns ratio of the first transformer ranges from 1:3 to 1:

6.

9. The radio frequency power amplifier of claim 1, wherein, the radio frequency power amplifier is a Doherty amplifier, the first radio frequency amplification circuit is a carrier amplification circuit, and the second radio frequency amplification circuit is a peak amplification circuit; or the radio frequency power amplifier is a balanced amplifier.

10. A radio frequency front end module, comprising: a substrate, a first chip, a first transformer, a second transformer, and a coupler disposed on the substrate; The first chip is provided with a first radio frequency amplification circuit and a second radio frequency amplification circuit, the first radio frequency amplification circuit is used for outputting a first radio frequency signal to the first transformer so that the first transformer outputs a first coupling signal, and the second radio frequency amplification circuit is used for outputting a second radio frequency signal to the second transformer so that the second transformer outputs a second coupling signal. A first input end of the coupler is connected with an output end of the first transformer, a second input end of the coupler is connected with an output end of the second transformer, and the coupler is used for power synthesis of the first coupling signal and the second coupling signal to output a synthesized signal.

11. The radio frequency front end module of claim 10, wherein, The first chip, the first transformer, the second transformer and the coupler are arranged in a preset area of the substrate, and the preset area is rectangular. The preset area includes a first sub-area, a second sub-area, a third sub-area and a fourth sub-area, the first sub-area and the fourth sub-area are located on a first diagonal line of the preset area, and the second sub-area and the third sub-area are located on a second diagonal line of the preset area. The first transformer and the second transformer are respectively arranged in the first sub-area and the fourth sub-area, and the first chip and the coupler are respectively arranged in the third sub-area and the second sub-area.

12. The radio frequency front end module of claim 11, wherein, The substrate is a rectangular substrate, the rectangular substrate is divided into a first area and a second area in a length direction, the first chip, the first transformer, the second transformer and the coupler are arranged in the first area, and a ratio between an occupied area of the first area and a total area of the substrate is less than or equal to 0.

5.

13. The radio frequency front end module of claim 10, wherein, The first transformer is arranged on a first side of the first chip, and the second transformer is arranged on a second side of the first chip; wherein the first side of the first chip is arranged along a first direction; the second transformer is arranged on the second side of the first chip, and the second side of the first chip is arranged along a second direction; wherein the first direction and the second direction intersect.

14. The radio frequency front end module of claim 13, wherein, An angle between an arrangement direction of the first transformer and the coupler and the first direction is less than or equal to 45 degrees, and an angle between an arrangement direction of the second transformer and the coupler and the second direction is less than or equal to 45 degrees.

15. The radio frequency front end module of claim 10, wherein, The first chip has adjacent first and second side edges, the first transformer is arranged adjacent to the first side edge, and the second transformer is arranged adjacent to the second side edge. The coupler is arranged in a preset direction of the first chip, and the coupler is arranged adjacent to the first transformer and the second transformer, and the preset direction of the first chip is a direction of a line connecting a center of the first chip to an intersection point of the first and second side edges.

16. The radio frequency front-end module of any one of claims 10-15, wherein, The first transformer includes a first coil and a second coil, the second transformer includes a third coil and a fourth coil, and the coupler includes a fifth coil and a sixth coil. The first coil, the second coil, the third coil, the fourth coil, the fifth coil and the sixth coil are formed in a metal layer of the substrate; A coil width of the fifth coil and / or the sixth coil is greater than a coil width of any one of the first coil, the second coil, the third coil and the fourth coil.

17. The radio frequency front end module of claim 16, wherein, The second end of the sixth coil is grounded through a first resistor, the first resistor is arranged in an edge region of the substrate, and the second end of the sixth coil is arranged adjacent to the first resistor relative to the second end of the fifth coil.

18. The radio frequency front-end module of any one of claims 10-15, wherein, The radio frequency front end module further comprises: A second chip, the second chip being provided with a radio frequency switch; The output end of the coupler is located in a central region formed by the fifth coil and the sixth coil of the coupler, and the output end of the coupler is connected to the radio frequency switch through a bonding wire.

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