Organic semiconductor heterojunction photoelectric adaptive memristor and preparation method thereof

Abstract

The invention discloses an organic semiconductor heterojunction photoelectric self-adaptive memristor and a preparation method thereof, and belongs to the field of neuromorphic devices, and the memristor sequentially comprises a substrate, a bottom electrode, a lower active layer, an upper active layer and a top electrode from bottom to top; the upper active layer is prepared from an organic material zinc phthalocyanine, and the lower active layer is prepared from an organic material N, N-tricosylperylene-3, 4, 9, 10-tetracarboxylic diimide. The memristor prepared by the invention realizes simulation of desensitization behavior and retina light adaptation function, and adaptivity modes are switched according to a stimulation type time-sharing trigger mechanism to support multi-mode perception and adaptive information processing in a dynamic environment, so that the development of a neuromorphic device for simulating the adaptivity function of a biological sensory system is promoted.

Description

TECHNICAL FIELD

[0001] The application belongs to the field of neuromorphic devices, and particularly relates to an organic semiconductor heterojunction photoelectric adaptive memristor and a preparation method thereof. BACKGROUND

[0002] Biological sensory systems adapt to complex environmental stimuli through dynamic regulation of sensitivity (such as the desensitization behavior of nociceptors and Weber's law). Traditional sensors can simulate biological sensory systems, but are mostly based on discrete signal processing and lack the adaptability and learning ability inherent in biological systems. Neuromorphic devices can simulate these adaptive functions through nonlinear regulation mechanisms to overcome the limitations of traditional sensors. However, existing research has mostly focused on the implementation of single-mode biomimetic functions (such as vision or touch). Therefore, developing a memristor that can achieve multi-modal perception and adaptive information processing in dynamic environments remains a challenge to be solved. SUMMARY

[0003] In view of the problem that existing neuromorphic devices only have single-mode biomimetic functions, the application provides an organic semiconductor heterojunction photoelectric adaptive memristor and a preparation method thereof. The memristor of the application integrates two biological adaptive functions (desensitization behavior and retinal adaptive function) in a single neuromorphic device, and can switch adaptive modes according to the type of stimulus and the time trigger mechanism to support multi-modal perception and adaptive information processing in dynamic environments.

[0004] Technical scheme: An organic semiconductor heterojunction photoelectric adaptive memristor, which comprises, from bottom to top, a substrate, a bottom electrode, a lower active layer, an upper active layer, and a top electrode; the upper active layer is prepared from an organic material zinc phthalocyanine, and the lower active layer is prepared from an organic material N,N-tricosyl perylene-3,4,9,10-tetracarboxylic diimide.

[0005] Further, the substrate is conductive glass, the bottom electrode is prepared from indium tin oxide, and the top electrode is an aluminum electrode.

[0006] Further, the thickness of the bottom electrode is 185 nanometers, the thickness of the lower active layer is 30 nanometers, the thickness of the upper active layer is 60 nanometers, and the thickness of the top electrode is 80 nanometers.

[0007] The preparation method of the organic semiconductor heterojunction photoelectric adaptive memristor comprises the following steps:

[0008] Step one: growing a layer of indium tin oxide as a bottom electrode on the surface of a substrate, and cleaning and drying;

[0009] Step two, the vacuum chamber of the vacuum evaporation equipment is put into the substrate treated in step one, and N, N-tricosyl perylene-3, 4, 9, 10-tetracarboxylic diimide is evaporated on the bottom electrode as the lower active layer, and the vacuum state is maintained to room temperature after evaporation is completed.

[0010] Step three, the vacuum chamber of the vacuum evaporation equipment is put into the substrate treated in step two, and zinc phthalocyanine is evaporated on the lower active layer as the upper active layer, and the vacuum state is maintained to room temperature after evaporation is completed.

[0011] Step four: the substrate treated in step three is put into the vacuum chamber of the vacuum evaporation equipment, and aluminum is evaporated on the upper active layer as the top electrode, and the vacuum state is maintained to room temperature after evaporation is completed, and an organic semiconductor heterojunction photoelectric self-adaptive memristor is obtained.

[0012] Further, in the step one, the substrate is conductive glass, and in the step one:

[0013] (1) the cleaning process is: ultrasonic cleaning with acetone, ethanol and deionized water in turn, for a total of 30 minutes;

[0014] (2) the drying process is: dried with nitrogen and then dried at 120 degrees Celsius for 60 minutes.

[0015] Further, in the step two, the evaporation conditions are:

[0016] The pressure in the vacuum chamber is controlled to be less than 5*10 -4 Pa, the evaporation rate is 0.2-0.5 angstroms / second, and the evaporation thickness is 30 nanometers.

[0017] Further, in the step three, the evaporation conditions are:

[0018] The pressure is controlled to be less than 5*10 -4 Pa, the evaporation rate is kept at 0.2-0.5 angstroms / second, and the evaporation thickness is 60 nanometers.

[0019] Further, in the step four, the evaporation conditions are:

[0020] The pressure in the vacuum chamber is controlled to be less than 5*10 -4 Pa, the evaporation rate is 0.6-0.9 angstroms / second, and the evaporation thickness is 80 nanometers.

[0021] Beneficial effects:

[0022] 1. The application integrates two biological adaptive functions (desensitization behavior and retinal adaptive function) on a single device, effectively solving the problem of traditional biological perception simulation that can only realize single mode (vision or touch) bionic simulation and reducing the hardware complexity.

[0023] 2、The application can realize bidirectional light response under self-powered conditions, and effectively reduces the power consumption of the device.

[0024] 3、The application realizes the transition from pulse response enhancement to desensitization behavior by regulating the pulse frequency, and widens the implementation function of synapse plasticity simulation of the memristor.

[0025] 4、The application has simple structure, and can switch adaptive mode according to the time trigger mechanism of the stimulation type, which promotes the development of neuromorphic devices for multi-modal perception and adaptive information processing in dynamic environment. BRIEF DESCRIPTION OF DRAWINGS

[0026] Figure 1 It is a structure schematic diagram of the organic semiconductor heterojunction photoelectric adaptive memristor in embodiment 1;

[0027] Figure 2 It is a positive and negative current-voltage graph of the single-layer ZnPc active layer memristor lacking PTCDI-C13 in example 2;

[0028] Figure 3 It is a positive and negative current-voltage graph of the single-layer PTCDI-C13 active layer memristor lacking ZnPc in example 3;

[0029] Figure 4 It is a negative current-voltage graph of the organic semiconductor heterojunction photoelectric adaptive memristor in embodiment 1;

[0030] Figure 5 It is a conductance-cycle number graph extracted based on the negative current-voltage curve of the organic semiconductor heterojunction photoelectric adaptive memristor in embodiment 1;

[0031] Figure 6 It is a negative'read, write and erase' cycle curve of the organic semiconductor heterojunction photoelectric adaptive memristor in embodiment 1;

[0032] Figure 7 It is a negative holding time test of the organic semiconductor heterojunction photoelectric adaptive memristor in embodiment 1 under different voltages;

[0033] Figure 8 It is a response current graph of the negative'read, write and erase' cycle test of the organic semiconductor heterojunction photoelectric adaptive memristor in embodiment 1 under different pulse frequency amplitude values;

[0034] Figure 9 It is a response current graph of the negative'read, write and erase' cycle test of the organic semiconductor heterojunction photoelectric adaptive memristor in embodiment 1 under different pulse frequency values;

[0035] Figure 10 It is a light response current graph of the organic semiconductor heterojunction photoelectric adaptive memristor in embodiment 1 under different light intensities;

[0036] Figure 11 The figure is the ratio-pulse number figure of the ratio of the n-th and the first light pulse response current of the organic semiconductor heterojunction photoelectric adaptive memristor in Example 1 under different light intensities.

[0037] Figure 12 The figure is the ratio-pulse number figure of the ratio of the n-th and the first light pulse response current of the organic semiconductor heterojunction photoelectric adaptive memristor in Example 1 under different light intensities.

[0038] Figure 13 The figure is the light double pulse facilitation characteristic curve of the organic semiconductor heterojunction photoelectric adaptive memristor in Example 1 under weak light.

[0039] Figure 14 The figure is the light pulse frequency-dependent plasticity characteristic curve of the organic semiconductor heterojunction photoelectric adaptive memristor in Example 1 under weak light. DETAILED DESCRIPTION

[0040] The technical solutions of the present application will be described in detail below through examples, but the protection scope of the present application is not limited to the examples.

[0041] Example 1

[0042] The present embodiment provides an organic semiconductor heterojunction photoelectric adaptive memristor, and the structure thereof is shown in the figure. Figure 1 The memristor is sequentially composed of a top electrode, an upper active layer, a lower active layer, a bottom electrode and a substrate from top to bottom, and is a vertical structure as a whole, wherein the upper active layer is composed of zinc phthalocyanine (ZnPc), and the lower active layer is composed of N,N-tricosyl perylene-3,4,9,10-tetracarboxy diimide (PTCDI-C13). The chemical structural formulae of PTCDI-C13 and ZnPc are as follows:

[0043]

[0044] The preparation steps of the memristor are as follows:

[0045] (1) A layer of tin oxide is grown on the surface of the substrate as a bottom electrode.

[0046] Conductive glass is selected as the substrate, and a layer of tin oxide is generated on the conductive glass as a bottom electrode to form ITO conductive glass. The thickness of the bottom electrode is 185 nanometers. The ITO conductive glass is cleaned with acetone, ethanol and deionized water for a total of 30 minutes, and then dried with nitrogen and placed in an oven at 120 degrees Celsius for 60 minutes for drying.

[0047] (2) A layer of N,N-tricosyl perylene-3,4,9,10-tetracarboxy diimide (PTCDI-C13) is evaporated on the bottom electrode as a lower active layer.

[0048] Put PTCDI-C13 into a clean crucible, and put the crucible and the clean ITO conductive glass after drying treatment into a vacuum evaporation device, control the pressure in the vacuum chamber to be lower than 5*10 -4 Pa, keep the evaporation rate at 0.3 angstroms per second, the evaporation thickness of PTCDI-C13 is 30 nanometers, and keep vacuum state until room temperature after evaporation.

[0049] (3) Evaporate a layer of zinc phthalocyanine (ZnPc) on the lower active layer as the upper active layer.

[0050] Put zinc phthalocyanine ZnPc into a clean crucible, and put the crucible and the ITO conductive glass with the lower active layer into a vacuum evaporation device, control the pressure in the vacuum chamber to be lower than 5*10 -4 Pa, keep the evaporation rate at 0.2 angstroms per second, the evaporation thickness of ZnPc is 60 nanometers, and keep vacuum state until room temperature after evaporation.

[0051] (4) Put the ITO conductive glass with the film into a vacuum evaporation device, control the pressure in the vacuum chamber to be lower than 5*10 -4 Pa, start evaporating aluminum as the top electrode, the evaporation rate is 0.6 angstroms per second, and the thickness of aluminum is 80 nanometers.

[0052] (5) After the evaporation experiment is completed, wait for the metal aluminum electrode to cool to room temperature in the vacuum chamber, obtain the memristor, and then take out the sample and test the photoelectric performance of the memristor sample.

[0053] The thickness of the film is measured by a step meter, and further confirmed by a scanning electron microscope.

[0054] Example 2

[0055] (1) Grow a layer of tin oxide on the surface of the substrate as the bottom electrode.

[0056] Select conductive glass as the substrate, generate a layer of tin oxide on the conductive glass as the bottom electrode, and form ITO conductive glass. The thickness of the bottom electrode is 185 nanometers. The ITO conductive glass is cleaned with acetone, ethanol, and deionized water for a total of 30 minutes, then dried with nitrogen and placed in an oven at 120 degrees Celsius for 60 minutes for drying.

[0057] (2) Evaporate a layer of zinc phthalocyanine (ZnPc) on the bottom electrode as the active layer.

[0058] Put zinc phthalocyanine ZnPc into a clean crucible, and put the crucible and the clean ITO conductive glass after drying treatment into a vacuum evaporation device, control the pressure in the vacuum chamber to be lower than 5*10 -4Pa, the evaporation rate is kept at 0.2 angstrom per second, and the ZnPc evaporation thickness is 60 nanometers. After the evaporation, the vacuum state is kept until the room temperature.

[0059] (3) Put the ITO conductive glass with the formed film into the vacuum evaporation equipment, control the pressure in the vacuum chamber to be lower than 5x10 -4 Pa, start to evaporate metal aluminum as the top electrode, the evaporation rate is 0.6 angstrom per second, and the aluminum thickness is 80 nanometers.

[0060] (5) After the evaporation experiment, the metal aluminum electrode is cooled to the room temperature in the vacuum chamber, the memristor is prepared, then the chamber is opened to take out the sample, and the related test on the photoelectric performance of the memristor sample is performed.

[0061] The thickness of the film is measured by using a step meter, and is further confirmed by a scanning electron microscope.

[0062] Example 3

[0063] (1) Grow a layer of tin oxide on the surface of the substrate as a bottom electrode.

[0064] Select conductive glass as the substrate, generate a layer of tin oxide on the conductive glass as a bottom electrode, and form ITO conductive glass. The thickness of the bottom electrode is 185 nanometers. The ITO conductive glass is cleaned with acetone, ethanol and deionized water for a total of 30 minutes, then dried by using nitrogen and placed in an oven at 120 degrees Celsius for 60 minutes for drying.

[0065] (2) Evaporate a layer of N,N-tricosylperylene-3,4,9,10-tetracarboxydiimide (PTCDI-C13) on the bottom electrode as an active layer.

[0066] Put the PTCDI-C13 into a clean crucible, and put the crucible and the clean ITO conductive glass after drying treatment into the vacuum evaporation equipment, control the pressure in the vacuum chamber to be lower than 5x10 -4 Pa, the evaporation rate is kept at 0.3 angstrom per second, and the PTCDI-C13 evaporation thickness is 30 nanometers. After the evaporation, the vacuum state is kept until the room temperature.

[0067] (3) Put the ITO conductive glass with the formed film into the vacuum evaporation equipment, control the pressure in the vacuum chamber to be lower than 5x10 -4 Pa, start to evaporate metal aluminum as the top electrode, the evaporation rate is 0.6 angstrom per second, and the aluminum thickness is 80 nanometers.

[0068] (4) After the evaporation experiment, the metal aluminum electrode is cooled to the room temperature in the vacuum chamber, the memristor is prepared, then the chamber is opened to take out the sample, and the related test on the photoelectric performance of the memristor sample is performed.

[0069] The thickness of the thin film was measured by a step profiler and further confirmed by a scanning electron microscope.

[0070] The prepared organic semiconductor heterojunction photoelectric self-adaptive memristor was tested for performance by using a Keithley 4200 SCS semiconductor parameter analyzer. The results are as follows:

[0071] Figure 2 The positive and negative current-voltage curves of the single-layer ZnPc memristor lacking PTCDI-C13 in Example 2 are shown in FIG. 6. The device exhibits the characteristics of positive enhancement and negative suppression of the response current with the number of cycles; Figure 2

[0072] Figure 3 The positive and negative current-voltage curves of the single-layer PTCDI-C13 memristor lacking ZnPc in Example 3 are shown in FIG. 7. The device exhibits the characteristics of bidirectional suppression of the response current with the number of cycles; Figure 2

[0073] Figure 4 The negative current-voltage curve of the memristor in Example 1 is shown in FIG. 8. Figure 5 The conductance-cycle number graph extracted based on the negative current-voltage curve of the memristor in Example 1 is shown in FIG. 9. As shown in FIG. 9, the negative response current of the device gradually increases in the first and second cycles, and the negative response current of the device gradually suppresses from the third cycle. As shown in FIG. 10, the conductance extracted from the current-voltage curve of the device gradually increases and then decreases with the increase of the number of cycles. Compared with the single-layer active layer devices in Examples 2 and 3, the memristor of the present application has the characteristics of first enhancement and then suppression of the response current; Figure 4 Figure 5 Figure 4 Figure 2 Figure 3

[0074] Figure 6 The negative "read, write, erase" cycle curve of the memristor in Example 1 is shown in FIG. 11. As shown in FIG. 11, under the continuous negative pulse stimulation, with the increase of the number of pulses, the response current of the device changes from enhancement to first enhancement and then suppression. Figure 6

[0075] Figure 7 The negative holding time test of the memristor in Example 1 under different voltages is shown in FIG. 12. The holding current changes from suppression at -7 volts to first enhancement and then suppression at -8 volts, -9 volts and -10 volts, and then changes to enhancement at -11 volts. Figure 7

[0076] The response current graph of the negative "read, write, erase" cycle test of the memristor in Example 1 under different pulse frequency amplitude values is shown in FIG. 13. As shown in FIG. 13, under the continuous negative pulse stimulation, with the increase of the number of pulses, the response current of the device changes from enhancement to first enhancement and then suppression. Figure 8 Figure 8 ​​​​​​​​​As shown, the device was subjected to negative "read, write, erase" cycle tests at different pulse amplitudes. The response current changed from suppression at -7V to enhancement followed by suppression at -8V, -9V, and -10V, and then to enhancement at -11V.

[0077] Figure 9 This is a response current diagram of the memristor under different pulse frequencies during a negative "read, write, erase" cycle test in Example 1; as shown... Figure 9 As shown, the device was subjected to negative "read, write, erase" cycle tests at different pulse frequencies. The device response current showed a phenomenon that it was enhanced under low-frequency (0.46 Hz) stimulation and then first enhanced and then suppressed under high-frequency (2.3 Hz) stimulation. This indicates that as the stimulation frequency increases, the device exhibits desensitization behavior, and the faster the frequency, the more obvious the desensitization phenomenon.

[0078] Figure 10 The image shows the photoresponse current diagram of the memristor under different light intensities in Example 1; as shown. Figure 10 As shown, the photoresponse current of the device was tested under different light intensities at a wavelength of 400 nm. The device exhibited a phenomenon of photoresponse current enhancement under weak light and photoresponse current suppression under strong light. This light intensity-dependent photoresponse is consistent with the light-dark adaptation of retinal cone and rod cells.

[0079] Figure 11 This is a diagram showing the optical pulse response current of the memristor under different light intensities in Example 1; as shown. Figure 11 As shown, the optical pulse response at different light intensities with a wavelength of 400 nm was tested. As the light intensity increased, the device exhibited a change from increased optical pulse response current under weak light conditions to suppressed optical pulse response current under strong light conditions.

[0080] Figure 12 This is a graph showing the ratio of the response currents of the nth and first light pulses under different light intensities in Example 1, plotted as a pulse number. Figure 12 As shown, Figure 11 The ratio of the response current of the nth light pulse to that of the first light pulse is used to extract the characteristic curve. The ratio increases with the number of pulses, changing from a ratio greater than 1 under weak light conditions and gradually increasing to a ratio less than 1 under strong light conditions and gradually decreasing.

[0081] Figure 13 Example 1: Memristor optical dual-pulse facilitation characteristic curve under weak light conditions; Figure 14 This is the frequency-dependent plasticity characteristic curve of the memristor under weak light conditions in Example 1. Figure 13 and Figure 14 As shown, Figure 13 This illustrates the short-term plasticity characteristics of the memristor of the present invention under dual-pulse stimulation in weak light conditions, and its charge retention or synaptic memory ability on a short timescale. Figure 14The synaptic current response to different light pulse frequencies under weak light conditions is shown, and the higher the pulse frequency, the more obvious the device current response enhancement, which reflects the sensitivity of the device to repeated stimulation.

[0082] From the above test results, it can be seen that:

[0083] (1) The memristor of the application has two biological adaptive functions of desensitization and light-dark adaptation.

[0084] From Figure 8 and Figure 9 it can be seen that the memristor of the application, under electrical pulse stimulation, shows that the response current after repeated stimulation changes from enhancement to inhibition, and with the increase of pulse frequency, the inhibition phenomenon appears faster and more obvious, this phenomenon of gradually inhibiting the response current to repeated stimulation conforms to the desensitization behavior of biological synapses, which shows that the memristor of the application has the desensitization function under electrical stimulation.

[0085] From Figure 10 and Figure 11 it can be seen that the memristor of the application, under weak light stimulation, the photocurrent is enhanced, similar to the dark adaptation mechanism of retinal rod cells (the sensitivity of the retina is improved in dark environment), and with the increase of light intensity, the photocurrent is inhibited under strong light stimulation, similar to the light adaptation mechanism of retinal cone cells (the sensitivity of the retina is reduced in bright environment), which shows that the memristor of the application has the light-dark adaptation function (retinal adaptation function) under light intensity stimulation.

[0086] (2) The memristor of the application switches the adaptive mode according to the type of stimulation and the time trigger mechanism. The specific performance is as follows:

[0087] Electrical stimulation mode ( Figures 4-9 ): under the condition of-8V to-10V, in the negative voltage cycle, the current first increases and then decreases (the conductance first rises and then falls, Figure 5 ), under electrical pulse stimulation, the response current first increases and then decreases, and the desensitization behavior changes from no desensitization under low-frequency pulse (0.46Hz) stimulation to desensitization under high-frequency pulse (2.3Hz) stimulation Figure 9 ), and the faster the frequency, the faster and more obvious the desensitization behavior triggers. And-7V → direct inhibition; -8V to-10V → first increase and then decrease; -11V → increase. This multi-mode dynamic response (inhibition / adaptation / enhancement) triggered based on different voltage thresholds covers the main forms of biological synaptic plasticity.

[0088] Light stimulation mode ( Figures 10-14 ): under weak light, the current enhancement shows dark adaptation (the sensitivity of the retinal rod cells is increased in dark environment), and under strong light condition, the current inhibition shows light adaptation (the sensitivity of the retinal cone cells is reduced in bright environment), and the light double pulse facilitation Figure 13) and pulse frequency-dependent plasticity ( Figure 14 ) show that the device has good synaptic plasticity.

[0089] The time-sharing trigger adaptive mode is that the memristor can select the enhancement mode (facilitation) or the inhibition mode (desensitization) according to the current stimulation type (electricity / optical) and parameters (intensity, frequency) in real time. Under weak light or low-frequency electric pulse weak stimulation, the enhancement mode (facilitation) is shown, the sensitivity is enhanced, under strong light or high-frequency electric pulse stimulation, the inhibition mode (desensitization) is shown, and overload is prevented. The time-sharing trigger mechanism well simulates the dynamic adjustment mechanism of biological synaptic plasticity.

[0090] (3) The memristor of the application supports multi-modal perception and adaptive information processing in a dynamic environment.

[0091] The memristor of the application has the two biological adaptive functions of desensitization and light-dark adaptation and the characteristics of switching the adaptive mode according to the time-sharing trigger mechanism of the stimulation type, so that the memristor of the application can simulate the multi-modal perception and adaptive processing capability of the biological system. Specifically,

[0092] Multi-modal perception: can simultaneously respond to electric signals and optical signals, and respectively adjust the adaptive mode (such as electric stimulation triggering desensitization and optical stimulation triggering light-dark adaptation).

[0093] Dynamic environment adaptation: in a changing environment (such as light intensity fluctuation and electric signal frequency change), the memristor can switch the enhancement / inhibition adaptive mode according to the change of the stimulation condition, has good synaptic plasticity and dynamic adjustability.

[0094] (4) The memristor of the application can realize light intensity-dependent bidirectional optical response under self-powered conditions, effectively reducing the power consumption of the device.

[0095] As shown in Figure 10 and Figure 11 , the memristor of the application shows the light-dark adaptation behavior of enhancement under weak light and inhibition under strong light by changing the light intensity under 0V bias. Compared with the traditional bidirectional optical response behavior which needs additional bias regulation, the bidirectional optical response under 0V self-powered conditions reduces the power consumption and is more in line with the power consumption of biological synapses.

[0096] (5) The memristor of the application realizes the conversion of the pulse response enhancement to the desensitization behavior by regulating the pulse frequency, and widens the implementation function of the synaptic plasticity simulation of the memristor.

[0097] Under the condition of-8V to-10V, in the negative voltage cycle, the current is first enhanced and then inhibited (the conductance is first increased and then decreased, Figure 5), under the electric pulse stimulation, the response current first strengthens and then inhibits, and the desensitization behavior triggered by the low-frequency pulse (0.46Hz) stimulation is changed into the desensitization behavior triggered by the high-frequency pulse (2.3Hz) stimulation (Fig. 2) Figure 9 ), and the faster the frequency, the faster and more obvious the desensitization behavior is triggered. And compared with the traditional memristor which can only realize inhibition / strengthening, the memristor of the application inhibits at-7V, first strengthens and then inhibits at-8V to-10V, and strengthens at-11V. The multi-mode dynamic response (inhibition / adaption / strengthening) triggered based on different voltage thresholds covers the main forms of biological synaptic plasticity.

[0098] In conclusion, the application relates to an organic semiconductor heterojunction photoelectric adaptive memristor and a preparation method thereof. The two biological adaptive functions of desensitization and light / dark adaptation are integrated, and the adaptive mode is switched according to the stimulation type time-sharing triggering mechanism to support multi-modal perception and adaptive information processing in a dynamic environment, which promotes the development of neuromorphic devices for simulating the adaptive functions of biological sensory systems.

[0099] As described above, although the application has been shown and described with reference to specific preferred embodiments, it is to be understood that the application is not to be limited to the details of the foregoing, but can be modified in various ways within the scope of the application.

Claims

1. An organic semiconductor heterojunction photoelectric self-adapting memristor, characterized in that, The memory resistor comprises, from bottom to top, a substrate, a bottom electrode, a lower active layer, an upper active layer and a top electrode. The upper active layer is prepared from organic material zinc phthalocyanine, and the lower active layer is prepared from organic material N,N-tricosyl perylene-3,4,9,10-tetracarboxylic diimide.

2. The memristor of claim 1, wherein, The substrate is conductive glass, the bottom electrode is prepared from indium tin oxide, and the top electrode is an aluminum electrode.

3. The memristor of claim 1, wherein, The thickness of the bottom electrode is 185 nanometers, the thickness of the lower active layer is 30 nanometers, the thickness of the upper active layer is 60 nanometers, and the thickness of the top electrode is 80 nanometers.

4. The method of claim 1, wherein the method comprises: The method comprises the following steps: Step one: growing a layer of tin oxide on the surface of the substrate as a bottom electrode, and cleaning and drying; Step two: placing the substrate treated in step one into the vacuum chamber of a vacuum evaporation device, evaporating a layer of N,N-tricosyl perylene-3,4,9,10-tetracarboxylic diimide on the bottom electrode as a lower active layer, and keeping the vacuum state until room temperature after evaporation is completed; Step three: placing the substrate treated in step two into the vacuum chamber of a vacuum evaporation device, evaporating a layer of zinc phthalocyanine on the lower active layer as an upper active layer, and keeping the vacuum state until room temperature after evaporation is completed; Step four: placing the substrate treated in step three into the vacuum chamber of a vacuum evaporation device, evaporating a layer of aluminum on the upper active layer as a top electrode, and keeping the vacuum state until room temperature after evaporation is completed, to obtain an organic semiconductor heterojunction photoelectric self-adaptive memory resistor.

5. The preparation method according to claim 4, characterized in that, In step one, the substrate is conductive glass.

6. The preparation method according to claim 4, wherein in step one: (1) the cleaning process is ultrasonic cleaning with acetone, ethanol and deionized water in sequence, for a total of 30 minutes; (2) the drying process is drying with nitrogen and then drying at 120 degrees Celsius for 60 minutes.

7. The preparation method according to claim 4, wherein in step two, the evaporation conditions are: The pressure in the vacuum chamber is controlled to be lower than 5 x 10 -4 The evaporation rate is 0.2-0.5 angstrom / second, and the evaporation thickness is 30 nanometers. In step three, the evaporation conditions are: The control pressure is less than 5 x 10 -4 The evaporation rate is kept at 0.2-0.5 angstroms per second, and the evaporation thickness is 60 nanometers. In step four, the evaporation conditions are: The pressure in the vacuum chamber was controlled to be lower than 5 x 10 -4 The deposition rate was 0.6-0.9 A / s and the thickness was 80 nm.

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