Stretchable panel and electronic equipment

Abstract

The invention relates to a stretchable panel and an electronic device. The stretchable panel comprises a stretchable substrate and a strain sensor on the stretchable substrate, and the strain sensor comprises a first gate electrode; a first polymer semiconductor layer overlapping the first gate electrode in a thickness direction of the stretchable substrate and including a polymer chain of the first polymer semiconductor layer; and a first source electrode and a first drain electrode electrically connected to the first polymer semiconductor layer and facing each other with the first polymer semiconductor layer interposed therebetween, a polymer chain of the first polymer semiconductor layer is oriented so as to intersect a first channel length direction extending from the first source electrode to the first drain electrode.

Description

[0001] Cross-reference to related applications

[0002] This application claims priority and interest in Korean Patent Application No. 10-2024-0063390, filed on May 14, 2024, and Korean Patent Application No. 10-2025-0047071, filed on April 10, 2025, the entire contents of which are incorporated herein by reference. Technical Field

[0003] This involves stretchable panels (stretchable panels, telescopic panels) and electronic devices (electronic components). Background Technology

[0004] In recent years, research has been conducted on stretchable panels, such as display panels that can be curved, bent, or folded, or wearable sensor arrays attached to living bodies or objects. Such stretchable panels can be stretchable, allowing them to stretch or recover according to the movement of a living body or the shape of an object. They can also be flexible, allowing them to be curved, bent, or folded in specific (or alternatively predetermined) directions. Summary of the Invention

[0005] Some exemplary implementations provide stretchable panels that can reduce, minimize, or prevent performance degradation due to stretching, including, for example, differences in performance, such as display quality, that may occur between regions where strain is applied and regions where no strain is applied, based on localized strain caused by stretching. Therefore, by reducing, minimizing, or preventing display performance degradation due to stretching of one or more portions of the stretchable panel, the display performance of the stretchable panel and any device including it can be improved.

[0006] Some implementation examples provide electronic devices that include stretchable panels.

[0007] According to some exemplary embodiments, the stretchable panel may include a stretchable substrate and a strain sensor on the stretchable substrate. The strain sensor may include a first gate electrode; a first polymer semiconductor layer that overlaps (stacks) the first gate electrode along the thickness direction of the stretchable substrate and includes polymer chains of the first polymer semiconductor layer; and a first source electrode and a first drain electrode, the first source electrode and the first drain electrode being electrically connected to the first polymer semiconductor layer and facing each other with the first polymer semiconductor layer therebetween. The polymer chains of the first polymer semiconductor layer may be oriented to intersect with a first channel length direction extending from the first source electrode to the first drain electrode.

[0008] The polymer chains of the first polymer semiconductor layer may be oriented at an angle of 45 degrees to 135 degrees relative to the length direction of the first channel.

[0009] The polymer chains of the first polymer semiconductor layer can be oriented perpendicular to the length direction of the first channel.

[0010] The first polymer semiconductor layer may include a plurality of semiconductor strips extending perpendicular to the length direction of the first channel, and each of the plurality of semiconductor strips may include at least a portion of the polymer chain of the first polymer semiconductor layer.

[0011] The stretchable panel may further include a non-stretchable pattern on a stretchable substrate and having a higher elastic modulus than the stretchable substrate, and the stretchable panel may include a non-stretchable region in which the stretchable substrate and the non-stretchable pattern are arranged to overlap each other, and a stretchable region other than the non-stretchable region (excluding the non-stretchable region), and a strain sensor may be located in the stretchable region.

[0012] The strain sensor may include a first strain sensor and a second strain sensor arranged separately from each other in the stretchable region, and the first channel length direction of the second strain sensor may be different from the first channel length direction of the first strain sensor.

[0013] The stretchable panel may further include a plurality of unit elements and a plurality of pixel circuits electrically connected to the plurality of unit elements. The plurality of unit elements may include light-emitting diodes, photodiodes, or any combination thereof, and the plurality of unit elements may be located in a non-stretchable region.

[0014] At least a portion of at least one pixel circuit of a plurality of pixel circuits may be located in a non-stretchable region.

[0015] At least one portion of a plurality of pixel circuits may be in a non-stretchable region, and separate (different) portions of the at least one pixel circuit may be in a stretchable region.

[0016] At least one pixel circuit of a plurality of pixel circuits may include a thin-film transistor, the thin-film transistor may include a second gate electrode; a second polymer semiconductor layer that overlaps with the second gate electrode along the thickness direction of a stretchable substrate and includes polymer chains of the second polymer semiconductor layer; and a second source electrode and a second drain electrode that are electrically connected to the second polymer semiconductor layer and face each other with the second polymer semiconductor layer therebetween, and the polymer chains of the second polymer semiconductor layer may be oriented parallel to a second channel length direction extending from the second source electrode to the second drain electrode.

[0017] The first polymer semiconductor layer and the second polymer semiconductor layer may contain the same polymer.

[0018] According to some exemplary embodiments, a stretchable panel may include a stretchable substrate, and a first thin-film transistor and a second thin-film transistor are disposed on the stretchable substrate. The first thin-film transistor includes a first gate electrode; a first polymer semiconductor layer that overlaps with the first gate electrode along the thickness direction of the stretchable substrate and includes polymer chains of the first polymer semiconductor layer; and a first source electrode and a first drain electrode, the first source electrode and the first drain electrode being electrically connected to the first polymer semiconductor layer and facing each other when the first polymer semiconductor layer is present therebetween. The second thin-film transistor includes a second gate electrode; a second polymer semiconductor layer that overlaps with the second gate electrode along the thickness direction of the stretchable substrate and includes polymer chains of the second polymer semiconductor layer; and a second source electrode and a second drain electrode, the second source electrode and the second drain electrode being electrically connected to the second polymer semiconductor layer and facing each other when the second polymer semiconductor layer is present therebetween. The polymer chains of the first polymer semiconductor layer may be oriented to intersect a first channel length direction extending from the first source electrode to the first drain electrode, and the polymer chains of the second polymer semiconductor layer may be parallel to a second channel length direction extending from the second source electrode to the second drain electrode.

[0019] The polymer chains of the first polymer semiconductor layer may be oriented at an angle of 45 degrees to 135 degrees relative to the length direction of the first channel.

[0020] The polymer chains of the first polymer semiconductor layer can be oriented perpendicular to the length direction of the first channel.

[0021] The stretchable panel may further include an unstretchable pattern on a stretchable substrate and having a higher elastic modulus than the stretchable substrate. The stretchable panel may include an unstretchable region in which the stretchable substrate and the unstretchable pattern are arranged to overlap each other, and a stretchable region other than the unstretchable region. A first thin-film transistor may be arranged in the stretchable region, and a second thin-film transistor may be arranged in the unstretchable region.

[0022] The stretchable panel may further include a third thin-film transistor electrically connected to the second thin-film transistor, the third thin-film transistor including a third gate electrode; a third polymer semiconductor layer that overlaps with the third gate electrode along the thickness direction of the stretchable substrate and includes polymer chains of the third polymer semiconductor layer; and a third source electrode and a third drain electrode that are electrically connected to the third polymer semiconductor layer and face each other with the third polymer semiconductor layer therebetween, the polymer chains of the third polymer semiconductor layer being oriented parallel to a third channel length direction extending from the third source electrode to the third drain electrode, and the third thin-film transistor being in the stretchable region.

[0023] The first polymer semiconductor layer and the third polymer semiconductor layer may comprise the same polymer.

[0024] The first polymer semiconductor layer may include a plurality of semiconductor strips extending perpendicular to the length direction of the first channel and comprising polymer, and the third polymer semiconductor layer may include a plurality of separate semiconductor strips extending parallel to the length direction of the third channel and comprising polymer.

[0025] The stretchable panel may further include a unit element electrically connected to a second thin-film transistor, wherein the unit element may include a light-emitting diode, a photovoltaic diode, or any combination thereof, and the unit element may be arranged in a non-stretchable region.

[0026] According to some implementation examples, the electronic device includes the aforementioned stretchable panel.

[0027] By incorporating strain sensors whose electrical properties are sensitive to stretching, local strain can be detected more effectively, and thus local strain can be compensated more effectively (e.g., by adjusting the parameters of the light emitted at the portion of the stretchable panel in which local strain is detected), thereby reducing, minimizing, or preventing performance degradation due to stretching of the stretchable panel. Attached Figure Description

[0028] Figure 1 This is a schematic plan view illustrating an example of a stretchable panel according to some exemplary embodiments.

[0029] Figure 2 This is a schematic illustration of implementation methods based on some examples. Figure 1 A perspective view of a strain sensor with a stretchable panel.

[0030] Figure 3 , 4 5 and 6 are examples illustrating implementation methods according to some examples. Figure 2 A schematic diagram of part "A" of the strain sensor.

[0031] Figure 6 This is a schematic plan view of a stretchable panel according to some exemplary embodiments.

[0032] Figure 7 From Figure 6 The enlarged plan view of the stretchable panel according to some exemplary embodiments is shown in part "B".

[0033] Figure 8 This illustrates implementation methods based on some examples. Figure 6 and 7 A cross-sectional view of the unit element included in the stretchable panel shown.

[0034] Figure 9This is a schematic illustration of implementation methods based on some examples. Figure 6 and 7 A perspective view of the thin-film transistors included in the pixel circuitry of the stretchable panel shown.

[0035] Figure 10 and 11 This illustrates implementation methods based on some examples. Figure 9 A schematic diagram of part "C" of a thin-film transistor.

[0036] Figure 12 This is a plan view of a stretchable panel according to some example embodiments, showing... Figure 6 The magnified part of the "B" in the text.

[0037] Figure 13 According to some example implementations, along Figure 12 The cross-sectional line XIII-XIII' in the diagram Figure 12 Cross-sectional view of the stretchable panel.

[0038] Figure 14 This is a schematic illustration of implementation methods based on some examples. Figure 12 and 13 A perspective view of the second pixel circuit of the stretchable panel shown.

[0039] Figure 15 and 16 This illustrates implementation methods based on some examples. Figure 14 A schematic diagram of part "D" of the second pixel circuit.

[0040] Figure 17 This is a schematic plan view of a stretchable panel according to some exemplary embodiments.

[0041] Figure 18 To illustrate implementation methods according to some examples Figure 17 A plan view of the arrangement of non-stretchable patterns in a stretchable panel.

[0042] Figure 19 This is a schematic diagram illustrating a skin-type stretchable display panel according to some exemplary embodiments.

[0043] Figure 20 , 21 22 and 23 are schematic diagrams illustrating examples of stretchable display panels according to some exemplary embodiments.

[0044] Figure 24A , 24B 24C are schematic diagrams illustrating skin-type sensor arrays according to some exemplary embodiments.

[0045] Figure 25 To illustrate the changes in current characteristics according to the stretching ratio (strain) when the thin-film transistor of the embodiment is stretched in a direction parallel to the source-drain direction (channel length direction) and in a direction perpendicular to that direction, and

[0046] Figure 26 This is a graph showing the change in current characteristics according to the stretching ratio when the thin-film transistor according to Reference Example 2 is stretched in a direction parallel to the source-drain electrode direction (channel length direction) and in a direction perpendicular to that direction, according to some example embodiments. Detailed Implementation

[0047] The following sections will describe some exemplary implementations in detail so that those skilled in the art can readily implement them. However, the structures used in practical applications can be implemented in several different forms and are not limited to the exemplary implementations described herein.

[0048] In the accompanying drawings, the thickness of layers, films, panels, areas, etc., is exaggerated for clarity.

[0049] It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" another element, it may be directly on said other element, or there may be intermediate elements present. Conversely, when an element is referred to as being "directly on" another element, there are no intermediate elements present.

[0050] As used herein, unless otherwise defined, “substituted” means that the hydrogen atom of a compound or functional group is replaced by a substituent selected from the following: halogen atom, hydroxyl, alkoxy, nitro, cyano, amino, azide, amido, hydrazine, hydrazone, carbonyl, carbamoyl, thiol, ester, carboxyl or a salt thereof, sulfonic acid or a salt thereof, phosphate or a salt thereof, silyl, C1 to C20 alkyl, C2 to C20 alkenyl, C2 to C20 alkynyl, C6 to C30 aryl, C7 to C30 arylalkyl, C1 to C30 alkoxy, C1 to C20 heteroalkyl, C3 to C20 heteroaryl, C3 to C20 heteroarylalkyl, C3 to C30 cycloalkyl, C3 to C15 cycloalkenyl, C6 to C15 cycloalkynyl, C3 to C30 heterocycloalkyl, and any combination thereof.

[0051] In the following text, “polymer” includes homopolymers, copolymers, or any combination thereof.

[0052] In the following text, "combination" includes mixtures, complexes, or stacked structures of two or more.

[0053] In the following text, devices, layers, elements, regions, etc., described as “stretchable” will be understood as elastic and / or configured to be elastic, such that the devices, layers, elements, regions, etc., are configured to elastically deform (e.g., stretch, compress, undergo strain, etc.), such that the devices, layers, elements, regions, etc., are configured to return to their original shape after deformation. For example, stretchable devices, layers, elements, regions, etc., as described herein may be capable of elastic deformation, such that the stretchable devices, layers, elements, regions, etc., can recover and indeed recover their original shape after stretching or compression.

[0054] In the following text, devices, layers, elements, regions, etc., described as “non-stretchable” will be understood as inelastic and / or not configured to be elastic, such that they are configured to deform inelastically (e.g., stretched, compressed, subjected to strain, etc.), such that they are configured not to return to their original shape after deformation. For example, non-stretchable devices, layers, elements, regions, etc., as described herein, may not elastically deform due to applied strain, such that they cannot and indeed do not return to their original shape after stretching or compression.

[0055] In the following text, a flexible device may be an electronic device formed on a substrate that is deformable by external force, and may include a stretchable device that can be stretched and recovered by external force.

[0056] It will be understood that elements and / or their properties (e.g., structure, surface, orientation, etc.) that are "perpendicular" or "parallel" relative to other elements and / or their properties (e.g., structure, surface, orientation, etc.) may be "perpendicular," "parallel," etc., or may be "substantially perpendicular," "substantially parallel," etc., relative to other elements and / or their properties.

[0057] An element and / or its properties that are “substantially perpendicular” to other elements and / or their properties (e.g., structure, surface, orientation, etc.) will be understood as being “perpendicular” to other elements and / or their properties within manufacturing and / or material tolerances, and / or having a deviation in magnitude and / or angle equal to or less than 10% from being “perpendicular” to other elements and / or their properties (e.g., ±10% tolerance).

[0058] Elements and / or properties that are “substantially parallel” to other elements and / or their properties (e.g., structure, surface, orientation, etc.) will be understood as being “parallel” to other elements and / or their properties within manufacturing and / or material tolerances, and / or having a deviation in magnitude and / or angle equal to or less than 10% from those that are “parallel” to other elements and / or their properties (e.g., ±10% tolerance).

[0059] It will be understood that an element and / or its properties may be described herein as “the same” or “equal” to other elements, and it will be further understood that an element and / or its properties described herein as “the same,” “the same,” or “equal” to other elements may be “the same,” “the same,” or “equal” to other elements or their properties, or “substantially the same,” “substantially identical,” or “substantially equal” to other elements or their properties. Element and / or its properties that are “substantially the same,” “substantially identical,” or “substantially equal” to other elements and / or their properties will be understood to include elements and / or their properties that are the same, the same, or equal to other elements and / or their properties within manufacturing tolerances and / or material tolerances. Element and / or its properties that are the same or substantially the same as other elements and / or their properties and / or the same or substantially identical may be structurally the same or substantially the same, functionally the same or substantially the same, and / or composed of the same or substantially the same.

[0060] It will be understood that the description of elements and / or properties as “substantially” identical and / or the same herein encompasses elements and / or properties having a relative difference in magnitude of equal to or less than 10%. Furthermore, regardless of whether an element and / or property is modified to “substantially”, it will be understood that such elements and / or properties should be interpreted to include manufacturing or operational tolerances (e.g., ±10%) surrounding said elements and / or properties.

[0061] While the terms “identical,” “equal,” or “same” may be used in the description of some exemplary embodiments, it should be understood that some imprecision may exist. Therefore, when an element is said to be identical to another element, it should be understood that one element is identical to the other element within a desired range of manufacturing or operational tolerances (e.g., ±10%).

[0062] When the terms “about” or “substantially” are used in conjunction with numerical values ​​in this specification, it is intended that the relevant numerical value includes manufacturing or operational tolerances (e.g., ±10%) around the stated value. Furthermore, when the terms “about” and “substantially” are used in conjunction with geometry, it is intended that precision of the geometry is not required, but rather that tolerance for the shape is within the scope of the inventive concept. Moreover, regardless of whether a numerical value or shape is modified with “about” or “substantially,” it will be understood that these values ​​and shapes should be interpreted as including manufacturing or operational tolerances (e.g., ±10%) around the stated numerical value or shape. When a range is specified, the range includes all values ​​therebetween, such as increments of 0.1%.

[0063] As described herein, when an operation is described as being performed “by” or “via” additional operations, or when an effect such as a structure is described as being established “by” or “via” additional operations, it will be understood that the operation may be performed “based on” additional operations and / or the effect / structure may be established “based on” additional operations, which may include performing the additional operations alone or in combination with other further additional operations.

[0064] As described herein, an element described as being generally (typically) and / or "spaced apart" from other elements in a particular direction (e.g., vertically spaced apart, laterally spaced apart, etc.) and / or "separated" from other elements can be understood as being generally and / or isolated from other elements in a particular direction to avoid direct contact (e.g., isolated from other elements in the vertical direction to avoid direct contact, isolated from other elements in the horizontal or lateral direction to avoid direct contact, etc.). Similarly, elements described as being generally and / or "spaced apart" from each other in a particular direction (e.g., vertically spaced apart, laterally spaced apart, etc.) and / or "separated" from each other can be understood as being generally and / or isolated from each other in a particular direction to avoid direct contact (e.g., isolated from each other in the vertical direction to avoid direct contact, isolated from each other in the horizontal or lateral direction to avoid direct contact, etc.). Similarly, a structure described herein as being between two other structures to separate the two other structures from each other can be understood as being configured to isolate the two other structures from each other to avoid direct contact.

[0065] In the following description, a stretchable panel according to some exemplary embodiments will be described with reference to the accompanying drawings.

[0066] According to some exemplary embodiments, a stretchable panel may include any panel arranged on a substrate that is deformable by external force, the panel having an array of elements comprising a plurality of unit elements operating in an active matrix manner. For example, a stretchable panel may include a flexible display panel having flexible and / or stretchable properties, a stretchable display panel, a flexible sensor array panel, a stretchable sensor array panel, or any combination thereof.

[0067] Figure 1 This is a schematic plan view illustrating an example of a stretchable panel according to some exemplary embodiments. Figure 2 This is a schematic illustration of implementation methods based on some examples. Figure 1 A perspective view of the strain sensor on the stretchable panel, and Figure 3 , 4 5 and 6 are examples illustrating implementation methods according to some examples. Figure 2 A schematic diagram of part "A" of the strain sensor.

[0068] refer to Figure 1According to some exemplary embodiments, the stretchable panel 1000 includes a stretchable substrate 110a and a strain sensor 300 (e.g., one or more strain sensors 300).

[0069] The stretchable substrate 110a may have a specific (or, alternatively, predetermined) stretchability and may include an elastomer (hereinafter referred to as the “first elastomer”) that can flexibly respond to external forces such as torsion, compression and tension.

[0070] The first elastomer may include organic elastomers (including organic-inorganic elastomers), inorganic elastomer materials, or any combination thereof, having a relatively low elastic modulus (hereinafter referred to as the "first elastic modulus"). The first elastomer may include, for example, polyorganosiloxanes, polymers including butadiene portions, polymers including urethane portions, polymers including acrylic portions, polymers including olefin portions, or any combination thereof, such as polydimethylsiloxane (PDMS), thermoplastic polyurethane (TPU), styrene-ethylene-butene-styrene (SEBS), styrene-ethylene-propylene-styrene (SEPS), styrene-butadiene-styrene (SBS), styrene-isoprene-styrene (SIS), styrene-isobutylene-styrene (SIBS), or any combination thereof, but is not limited thereto. Inorganic elastomer materials may include, for example, but not limited to, elastic ceramics, solid metals, liquid metals, or any combination thereof.

[0071] A strain sensor 300 is disposed on a stretchable substrate 110a (e.g., directly or indirectly disposed on the stretchable substrate 110a) and is configured to detect strain by representing a change in electrical properties according to strain. The strain sensor 300 may be a stretchable strain sensor having a specific (or, alternatively, predetermined) stretchability, and thus may be stretched together with the stretchable substrate 110a when the stretchable substrate 110a is stretched (e.g., based on stretching of the stretchable substrate 110a), and may be located in a region where strain is concentrated due to stretching to sensitively detect strain.

[0072] The strain sensor 300 may be, for example, a strain-sensitive transistor, and may be configured to detect strain by, for example, a change in the electrical properties of a polymer layer included in the active layer of the strain-sensitive transistor under stretching.

[0073] Reference Figure 2 and 3 The strain sensor 300 includes a first gate electrode 124a, a first gate insulating layer 140a, a first source electrode 173a, a first drain electrode 175a, and a first polymer semiconductor layer 154a.

[0074] The first gate electrode 124a may be made of (for example, may at least partially include) metals such as gold (Au), copper (Cu), nickel (Ni), aluminum (Al), molybdenum (Mo), chromium (Cr), tantalum (Ta), titanium (Ti), or any alloy thereof; conductive nanostructures such as nanowires or nanotubes; or any combination thereof, but not limited thereto. For example, the first gate electrode 124a may be a stretchable electrode and may include, for example, a conductive layer having multiple microcracks.

[0075] The first gate insulating layer 140a may be formed on the entire surface of the stretchable substrate 110a (e.g., directly or indirectly on the entire upper surface 110as and / or overlapping the entire upper surface 110as in the Z direction perpendicular to the upper surface 110as), and may be disposed between the first gate electrode 124a and the first polymer semiconductor layer 154a (e.g., directly or indirectly therebetween). The first gate insulating layer 140a may be made of (e.g., may at least partially include) an organic insulator, an inorganic insulator, and / or an organic-inorganic insulator, and may include, for example, a stretchable insulator. The first gate insulating layer 140a may have, for example, one, two, or more layers. For example, the first gate insulating layer 140a may be made of (for example, may at least partially include) an elastic polymer, including, for example, polydimethylsiloxane (PDMS), thermoplastic polyurethane (TPU), styrene-ethylene-butene-styrene (SEBS), styrene-ethylene-propylene-styrene (SEPS), styrene-butadiene-styrene (SBS), styrene-isoprene-styrene (SIS), styrene-isobutylene-styrene (SIBS), or any combination thereof, but not limited thereto.

[0076] The first source electrode 173a may face the first drain electrode 175a with the first polymer semiconductor layer 154a interposed therebetween, and the first source electrode 173a and the first drain electrode 175a are each electrically connected to the first polymer semiconductor layer 154a. The first source electrode 173a and the first drain electrode 175a may be made of (for example, may include at least in part) metals such as gold (Au), copper (Cu), nickel (Ni), aluminum (Al), molybdenum (Mo), chromium (Cr), tantalum (Ta), titanium (Ti), or any alloy thereof; conductive nanostructures such as nanowires or nanotubes; or any combination thereof, but not limited thereto. For example, the first source electrode 173a and the first drain electrode 175a may each be independently stretchable electrodes and may include, for example, a conductive layer having multiple microcracks.

[0077] The first polymer semiconductor layer 154a overlaps with the first gate electrode 124a along the thickness direction of the stretchable substrate 110a (e.g., the Z direction extending perpendicular to the upper surface 110as). Reference Figure 3The first polymer semiconductor layer 154a may be a stretchable semiconductor layer and may include a polymer oriented in one direction (which may also be interchangeably referred to herein as polymer chain 155a). The polymer (e.g., polymer chain 155a) may include homopolymers, copolymers, or any combination thereof (which include one or more repeating units), and may be, for example, a conjugated polymer. The polymer (e.g., polymer chain 155a) may be, for example, but not limited to, a copolymer comprising repeating units containing at least one electron-donating portion and repeating units containing at least one electron-receiving portion.

[0078] Reference Figure 3 and 4 The polymer (e.g., polymer chain 155a) may be oriented in one direction (e.g., a first direction D1) within the first polymer semiconductor layer 154a, and wherein the repeating units of the polymer (e.g., polymer chain 155a) are connected in a single row (single row) of a main chain (hereinafter referred to as "polymer chain," and the terms "polymer" and "polymer chain" are used interchangeably) oriented to intersect a first channel length direction L1 extending from the first source electrode 173a to the first drain electrode 175a. Here, the first channel length direction L1 may be the direction in which charge carriers (e.g., electrons) move from the first source electrode 173a to the first drain electrode 175a. As at least Figure 2 As shown, in some exemplary embodiments, the first source electrode 173a and the first drain electrode 175a may extend in a horizontal direction parallel to (e.g., parallel to its upper surface 110as) the stretchable substrate 110a (e.g., parallel to its upper surface 110as). Figure 2 The first channel length direction L1 can be at least partially overlapping each other in the X direction (as shown), such that it extends parallel to the stretchable substrate 110a (e.g., parallel to its upper surface 110as), for example, in the X direction. However, it will be understood that the relative arrangement of the first source electrode 173a and the first drain electrode 175a with respect to the stretchable substrate 110a, and therefore the direction in which the first channel length direction L1 extends with respect to the stretchable substrate 110a, is not limited thereto.

[0079] Typically, charge carriers (electrons) in a transistor can move along the polymer chains, and therefore, when the channel length direction is parallel to the polymer chains, a high charge mobility can be exhibited. Even if strain occurs along the channel length direction, it will not have any significant effect on the arrangement of the polymer chains, and therefore the change in charge transport characteristics will be insignificant.

[0080] Conversely, since the polymer chains 155a of the first polymer semiconductor layer 154a are oriented to intersect with the first channel length direction L1, the first channel length direction L1 and the polymer chains 155a may not be parallel (e.g., they may not extend parallel to each other), and therefore the charge mobility may be relatively low. Furthermore, when strain occurs in the first channel length direction L1, the gap between adjacent polymer chains 155a widens, allowing for a significant change in the charge transfer characteristics according to strain, and strain can be sensitively detected from this change in the charge transfer characteristics according to strain. As a result, the stretchable panel 1000 and / or devices including it (e.g., stretchable device 2000) can have improved functionality due to the improved ability to detect strain at one or more portions of the stretchable panel 1000 with improved sensitivity (e.g., detecting localized strain at one or more limiting portions of the stretchable panel 1000, as indicated by one or more strain sensors 300). As a further result, the stretchable panel 1000 and / or the device including it (e.g., the stretchable device 2000) may have improved functionality due to the following: the ability to responsively adjust the display parameters of the image and / or portions thereof displayed at one or more limiting portions of the stretchable panel 1000 (e.g., adjusting the brightness, intensity, etc. of the light emitted at one or more limiting portions of the stretchable panel) to compensate for detected local strain and thereby reduce, minimize, or prevent the degradation of the display performance of the stretchable panel 1000 due to detected local strain.

[0081] For example, refer to Figure 4 The orientation direction D1 of the polymer chains 155a of the first polymer semiconductor layer 154a (e.g., the extension direction in which each polymer chain 155a extends) may form a specific (or, alternatively, a predetermined) angle (θ) relative to the first channel length direction L1, and may be oriented at, for example, about 45 degrees to about 135 degrees relative to the first channel length direction L1 (e.g., the polymer chains 155a may extend in an orientation direction D1 in which an angle of, for example, about 45 degrees to about 135 degrees may be formed relative to the first channel length direction L1). Within the aforementioned scope, the polymer chains 155a of the first polymer semiconductor layer 154a may be oriented relative to the first channel length direction L1 at, for example, about 60 to about 120 degrees, about 70 to about 110 degrees, about 80 to about 100 degrees, or about 85 to about 95 degrees (e.g., the polymer chains 155a may extend in an orientation direction D1 that forms an angle of, for example, about 60 to about 120 degrees, about 70 to about 110 degrees, about 80 to about 100 degrees, or about 85 to about 95 degrees relative to the first channel length direction L1), and may be oriented, for example, vertically or substantially vertically (e.g., 90 degrees or about 90 degrees relative to the first channel length direction L1). It will be understood that the terms "vertically" and "perpendicular" are used interchangeably herein.

[0082] For example, refer to Figure 5 The first polymer semiconductor layer 154a may include a plurality of semiconductor strips 154a-1 extending parallel along one direction (e.g., E1), and each semiconductor strip 154a-1 may include at least a portion of the aforementioned polymer chain 155a. The extension direction E1 of the plurality of semiconductor strips 154a-1 may be a direction intersecting the first channel length direction L1. For example, the extension direction E1 of each semiconductor strip 154a-1 may form an angle of about 45 degrees to about 135 degrees with the first channel length direction L1, and within the above range, an angle of about 60 degrees to about 120 degrees, about 70 degrees to about 110 degrees, about 80 degrees to about 100 degrees, or about 85 degrees to about 95 degrees may be formed, and may be vertical or substantially vertical (e.g., the extension direction E1 of each semiconductor strip 154a-1 and the first channel length direction L1 may form an angle of 90 degrees or about 90 degrees). Figure 5 As shown, the extension direction E1 of each semiconductor strip 154a-1 may be the same as or substantially the same as the orientation direction D1 of the polymer chain 155a.

[0083] In this way, since the polymer chains 155a of the first polymer semiconductor layer 154a are oriented (e.g., extending in the orientation direction D1) to intersect with respect to the length direction L1 of the first channel (e.g., perpendicularly or substantially perpendicularly, vertically or substantially perpendicularly, etc.), the charge transport characteristics (electrical properties) can vary according to the change in the spacing between the polymer chains when strain occurs, and thus strain can be detected sensitively. As a result, the stretchable panel 1000 and / or the device including it (e.g., the stretchable device 2000) can have improved functionality due to the improved ability to detect strain at one or more portions of the stretchable panel 1000 with improved sensitivity (e.g., detecting localized strain at one or more limiting portions of the stretchable panel 1000, as indicated by one or more strain sensors 300). As a further result, the stretchable panel 1000 and / or the device including it (e.g., the stretchable device 2000) may have improved functionality due to the following: an improved ability to responsively adjust the display parameters of the image and / or portions thereof displayed at one or more limiting portions of the stretchable panel 1000 (e.g., adjusting the brightness, intensity, etc. of light emitted at one or more limiting portions of the stretchable panel) to compensate for detected local strain and thereby reduce, minimize, or prevent degradation of the display performance of the stretchable panel 1000 due to detected local strain. It will be understood that an element extending in the orientation direction D1 and / or the extension direction E1 can be understood as having a longitudinal axis extending in the orientation direction D1 and / or the extension direction E1.

[0084] In the following text, further examples of stretchable panels according to some exemplary implementations are described.

[0085] Figure 6 This is a schematic plan view of a stretchable panel according to some exemplary embodiments, and Figure 7 From Figure 6 The enlarged plan view of the stretchable panel according to some example implementations is shown in part "B".

[0086] Reference Figure 6 and 7 According to some exemplary embodiments, a stretchable panel 1000 includes a stretchable substrate 110a in which the elastic modulus is along a surface direction (e.g., the XY direction) (which may also be interchangeably referred to herein as the in-plane direction of the stretchable substrate 110a, and which may extend parallel to the upper surface 110as of the stretchable substrate 110a, such as at least Figure 2 , 9 The region is different from those shown in 13 to 14, and includes a stretchable region 1000-2 with a relatively low modulus of elasticity and a non-stretchable region 1000-1 with a relatively high modulus of elasticity (e.g., higher than that of the stretchable region 1000-2).

[0087] The stretchable region 1000-2 is a region capable of flexibly responding to external forces such as torsion, compression, and tension, and may be a region other than the non-stretchable region 1000-1. The stretchable region 1000-2 may be a region on the stretchable substrate 110a in which the non-stretchable pattern 110b is not covered (e.g., a portion of the stretchable substrate 110a exposed from the non-stretchable pattern 110b in a Z direction extending perpendicular to the in-plane direction (e.g., the XY direction) of the stretchable substrate 110a) (e.g., not overlapping with it), and may be relatively uniformly distributed across the entire surface of the stretchable panel 1000 (e.g., uniformly or substantially uniformly distributed across the entire stretchable substrate 110a). For example, the stretchable region 1000-2 may include and / or be defined as a specific portion of the stretchable substrate 110a exposed from one or more non-stretchable patterns 110b in the thickness direction (e.g., the Z direction as shown).

[0088] The elastic modulus of the stretchable region 1000-2 may be the same as or substantially the same as the elastic modulus of the stretchable substrate 110a. The stretchable substrate 110a may include an elastomer having a relatively low elastic modulus as described above (e.g., interchangeably referred to herein as a first elastomer), and the elastic modulus of said elastomer may be, for example, from about 100 Pa to about 10 Pa. 9Pa, but not limited thereto. The elastomer may include, for example, polyorganosiloxanes, polymers including butadiene portions, polymers including urethane portions, polymers including acrylic portions, polymers including olefin portions, or combinations thereof, and may be, for example, polydimethylsiloxane (PDMS), thermoplastic polyurethane (TPU), styrene-ethylene-butene-styrene (SEBS), styrene-ethylene-propylene-styrene (SEPS), styrene-butadiene-styrene (SBS), styrene-isoprene-styrene (SIS), styrene-isobutylene-styrene (SIBS), or any combination thereof, but not limited thereto. Inorganic elastomer materials may include, for example, elastic ceramics, elastic solid metals, elastic liquid metals, or any combination thereof, but not limited thereto.

[0089] The stretchable region 1000-2 may be surrounded and isolated by the non-stretchable region 1000-1 (e.g., in the in-plane direction, such as in the XY direction), but the exemplary implementation is not limited thereto, and conversely, the non-stretchable region 1000-1 may be surrounded and isolated by the stretchable region 1000-2 (e.g., in the XY direction).

[0090] The non-stretchable region 1000-1 may be a region with relatively high resistance to external forces such as torsion, compression, and tension, such that it can be deformed substantially without external force or with very little deformation. That is, apart from regions that are completely non-stretchable, the non-stretchable region 1000-1 may include tensile resistance regions (tensile resistance regions) with very low stretchability due to their high resistance to tension. The non-stretchable region 1000-1 may include a non-stretchable pattern 110b. Although exemplary embodiments of the stretchable panel 1000 are described herein as including a non-stretchable pattern 110b, it will be understood that the non-stretchable pattern 110b may include multiple non-stretchable patterns, and in some exemplary embodiments, the stretchable panel 1000 may include multiple non-stretchable patterns 110b. The non-stretchable pattern 110b may include organic, inorganic, and / or organic-inorganic materials with a high modulus of elasticity.

[0091] The non-stretchable region 1000-1 may be an area covered by a non-stretchable pattern 110b having a high elastic modulus on the stretchable substrate 110a (e.g., covering at least a portion of the stretchable substrate 110a in the Z direction), as will be described later, and thus the non-stretchable region 1000-1 may have the same or substantially the same planar shape as the non-stretchable pattern 110b.

[0092] The elastic modulus of the non-stretchable region 1000-1 can be determined by the following: (for example, based on) the elastic modulus of the non-stretchable pattern 110b. For example, the elastic modulus of the non-stretchable pattern 110b can be about 100 times or higher than the elastic modulus of the stretchable substrate 110a, within the above range, about 300 times or higher, about 500 times or higher, or about 1000 times or higher, and within the above range, about 100 times to about 10. 8 Times, approximately 500 times to approximately 10 8 Times, approximately 1000 times to approximately 10 8 Times, approximately 100 times to approximately 10 7 Times, approximately 500 times to approximately 10 7 Times, or about 1000 times to about 10 7 For example, the elastic modulus of the non-stretchable pattern 110b can be approximately 10 times. 4 Pa to approximately 10 12 Pa, but not limited thereto. Due to the high elastic modulus of the non-stretchable pattern 110b, even if the stretchable substrate 110a is stretched in a specific (or alternatively predetermined) direction, the non-stretchable region 1000-1 can remain substantially unstretched or deformed (e.g., it can remain rigid or substantially rigid).

[0093] The non-stretchable pattern 110b may include organic materials, inorganic materials, organic-inorganic materials or any combination thereof having a relatively high modulus of elasticity, and may include, for example, non-stretchable but flexible materials such as polycarbonate, polymethyl methacrylate, polyethylene terephthalate, polyethylene naphthalate, polyimide, polyamide, polyamide-imide, polyethersulfone, or any combination thereof, but is not limited thereto.

[0094] The non-stretchable pattern 110b can be formed by, for example, coating or depositing a material (e.g., an organic material) having a relatively high elastic modulus on a stretchable substrate 110a, and partially removing it (e.g., the material) (by etching, for example) to leave the non-stretchable pattern 110b only in the portion corresponding to the non-stretchable region 1000-1. However, the inventive concept is not limited thereto, and non-stretchable regions 1000-1 and stretchable regions 1000-2 with different elastic moduli can be implemented by forming the non-stretchable pattern 110b on the stretchable substrate 110a in various ways.

[0095] The non-stretchable pattern 110b may include a plurality of planar patterns 110b-1 and a plurality of bridging patterns 110b-2. The plurality of planar patterns 110b-1 may be repeatedly disposed on the stretchable substrate 110a to define a plurality of planar regions 1000-1A of the non-stretchable region 1000-1 (e.g., island-shaped non-stretchable regions), and the plurality of bridging patterns 110b-2 may be repeatedly disposed on the stretchable substrate 110a to define a plurality of bridging regions 1000-1B of the non-stretchable region 1000-1 (e.g., one or more bridging regions 1000-1B connecting adjacent planar regions 1000-1A).

[0096] Multiple planar regions 1000-1A may be regions occupied by multiple pixels PX of the stretchable panel 1000, and the multiple pixels PX may be arranged repeatedly along rows and / or columns. Each pixel PX may include multiple sub-pixels, and the multiple sub-pixels included in each pixel PX may have an arrangement such as 3x1, 2x2, 3x3, or 4x4, but the exemplary embodiments are not limited thereto. The arrangement of the multiple pixels PX (or sub-pixels) may be the same as the arrangement of the unit element 130 described later, and may be, for example, a Bayer matrix, a PenTile matrix, and / or a diamond matrix, but is not limited thereto. In the following description, pixels and sub-pixels are used interchangeably.

[0097] The planar patterns 110b-1 defining each planar region 1000-1A may have a specific (or, alternatively, predetermined) area, and at least a portion of the unit element 130 (described later) and the pixel circuitry 120 driving the unit element 130 may be disposed thereon. As described herein, the pixel circuitry 120 may include a plurality of pixel circuitry 120, and the unit element 130 may include a plurality of unit elements 130, wherein the plurality of pixel circuitry 120 is configured to independently operate individual corresponding unit elements 130 among the plurality of unit elements 130. Since each unit element 130 is disposed on each planar pattern 110b-1 (e.g., the unit element 130 may be on a separate corresponding planar pattern 110b-1), the size (area) of each planar pattern 110b-1 may be larger than the size (area) of each unit element 130.

[0098] Multiple bridging regions 1000-1B may be defined by bridging patterns 110b-2, and each bridging pattern 110b-2 may connect adjacent planar patterns 110b-1. Bridging patterns 110b-2 may have, for example, a straight line shape, and wiring may be arranged thereon.

[0099] The arrangement of planar regions 1000-1A and bridging regions 1000-1B can be modified in various ways depending on the arrangement of the multiple unit elements 130 and wiring. However, when the stretchable substrate 110a is stretched, it can be geometrically patterned to allow for three-dimensional deformation. The geometric pattern may include, for example, a kirigami pattern including cut lines, but is not limited to this. The geometry of the non-stretchable region 1000-1 allows for three-dimensional deformation of the stretchable panel 1000 even when an external force, such as torsion, compression, or tension, is applied to the stretchable panel 1000 in a specific (or, alternatively, predetermined) direction, even if the non-stretchable region 1000-1 is not flexibly stretched by the external force like the stretchable substrate 110a.

[0100] A stretchable panel 1000 according to some exemplary embodiments includes a strain sensor 300, a unit element 130, and a pixel circuit 120. The strain sensor 300 may be in stretchable regions 1000-2, while the unit element 130 and the pixel circuit 120 may be in non-stretchable regions 1000-1.

[0101] The strain sensor 300 can be a tensile strain sensor as described above, and can be disposed in a region in which a large strain is applied due to stretching to sensitively detect strain. The strain sensor 300 can be a strain-sensitive transistor including a first gate electrode 124a, a first gate insulating layer 140a, a first source electrode 173a, a first drain electrode 175a, and a first polymer semiconductor layer 154a, such as... Figure 2As shown in the diagram. The polymer chains 155a of the first polymer semiconductor layer 154 may be oriented to intersect (e.g., substantially perpendicularly) the length direction L1 of the first channel, such that when strain occurs in the length direction L1 of the first channel, the gap between adjacent polymer chains widens, and thus a large change in the charge transport characteristics according to strain can occur, and strain can be sensitively detected from the change in the charge transport characteristics according to strain. A detailed description is provided above. As a result, the stretchable panel 1000 and / or devices including it (e.g., stretchable device 2000) can have improved functionality due to the improved ability to detect strain at one or more portions of the stretchable panel 1000 with improved sensitivity (e.g., detecting localized strain at one or more limiting portions of the stretchable panel 1000, as indicated by one or more strain sensors 300). As a further result, the stretchable panel 1000 and / or the device including it (e.g., the stretchable device 2000) may have improved functionality due to the following: the ability to responsively adjust the display parameters of the image and / or portions thereof displayed at one or more limiting portions of the stretchable panel 1000 (e.g., adjusting the brightness, intensity, etc. of the light emitted at one or more limiting portions of the stretchable panel) to compensate for detected local strain and thereby reduce, minimize, or prevent the degradation of the display performance of the stretchable panel 1000 due to detected local strain.

[0102] Strain sensors 300 may be uniformly distributed in the stretchable region 1000-2 (e.g., multiple strain sensors 300 may be uniformly or substantially uniformly distributed in the stretchable region 1000-2), and may include, for example, a first strain sensor 300a and a second strain sensor 300b arranged separately from each other. The first strain sensor 300a and the second strain sensor 300b may be arranged in different directions to correspond to multiple tensile directions, and therefore, the first channel length direction L1 of the first strain sensor 300a and the second strain sensor 300b may be different from each other. By including first and second strain sensors 300a and 300b arranged in different directions in this manner, the direction in which strain is applied can be determined depending on the location being evaluated. As a result, the stretchable panel 1000 and / or the device including it (e.g., the stretchable device 2000) can have improved functionality due to the following: an improved ability to detect strain (including the direction of such strain) at one or more portions of the stretchable panel 1000 with improved sensitivity (e.g., detecting local strain at one or more limiting portions of the stretchable panel 1000, as indicated by one or more strain sensors 300). As a further result, the stretchable panel 1000 and / or the device including it (e.g., the stretchable device 2000) can have improved functionality due to the following: an improved ability to responsively adjust the display parameters of the image and / or portions thereof displayed at one or more limiting portions of the stretchable panel 1000 (e.g., adjusting the brightness, intensity, etc. of light emitted at one or more limiting portions of the stretchable panel) to compensate for the detected local strain and thereby reduce, minimize, or prevent degradation of the display performance of the stretchable panel 1000 due to the detected local strain.

[0103] The unit element 130 may be disposed in each planar region 1000-1A of the non-stretchable region 1000-1, and may also be disposed on the planar pattern 110b-1 of the aforementioned non-stretchable pattern 110b. For example, when the unit element 130 includes multiple unit elements 130 and the non-stretchable region 1000-1 includes multiple planar regions 1000-1A, each individual unit element 130 of the multiple unit elements 130 may be disposed in a separate planar region 1000-1A of the non-stretchable region 1000-1. Each unit element 130 included in each planar region 1000-1A of the non-stretchable region 1000-1 may be, for example, a light-emitting diode such as an organic light-emitting diode, an inorganic light-emitting diode, a quantum dot light-emitting diode, a micro light-emitting diode, or a perovskite light-emitting diode, or a photoelectric conversion diode such as an organic photoelectric conversion diode, an inorganic photoelectric conversion diode, or an organic / inorganic photoelectric conversion diode, and may be the same as or different from each other.

[0104] As an example, each unit element 130 may be a light-emitting diode configured to independently display red light, green light, blue light, or any combination thereof.

[0105] As an example, each unit element 130 may be a photodiode configured to selectively absorb light of red wavelength, green wavelength, blue wavelength, infrared wavelength, or any combination thereof, and convert the absorbed light into an electrical signal.

[0106] As an example, a portion of unit element 130 may be a light-emitting diode, and a portion of unit element 130 (e.g., a separate portion) may be a photodiode.

[0107] Figure 8 This illustrates implementation methods based on some examples. Figure 6 and Figure 7 The cross-sectional view of the unit element included in the stretchable panel shown.

[0108] Reference Figure 8 The unit element 130 (e.g., each individual unit element 130) may be a light-emitting diode or a photodiode, and may include an anode 131; a cathode 132; an active layer 133 between the anode 131 and the cathode 132; and one or both of auxiliary layers 134a and 134b optionally between the anode 131 and the active layer 133 and / or between the cathode 132 and the active layer 133.

[0109] At least one of the anode 131 or cathode 132 may be a light-transmitting electrode. For example, the anode 131 may be a light-transmitting electrode, and the cathode 132 may be a reflective electrode. The light-transmitting electrode may be made of (for example, may include at least part of) a transparent conductor such as indium tin oxide (ITO) or indium zinc oxide (IZO), or a single-layer or multi-layer metal film of thin thickness. When one of the anode 131 or cathode 132 is an opaque electrode, the opaque electrode may be made of an opaque conductor such as aluminum (Al). For example, the anode 131 and cathode 132 may each be a light-transmitting electrode. At least one of the anode 131 or cathode 132 may be a stretchable electrode. The stretchable electrode may include, for example, a stretchable conductor or may have a stretchable shape such as a wavy shape, a corrugated shape, a pop-up shape, or a non-planar mesh shape. The stretchable electrode may have, for example, multiple microcracks, and since the multiple microcracks are separated from each other like small holes, the stretchable electrode can be made flexible by extending along the stretching direction during stretching while maintaining the electrical transport path in the stretchable electrode.

[0110] The active layer 133 can be a light-emitting layer or a photoelectric conversion layer.

[0111] The light-emitting layer may be configured to emit light in the red wavelength region, green wavelength region, blue wavelength region, infrared wavelength region, or any combination thereof, and may include, for example, an organic light-emitting layer, an inorganic light-emitting layer (including a quantum dot light-emitting layer), an organic / inorganic light-emitting layer, or any combination thereof. The light-emitting layer may include at least one host material and at least one dopant.

[0112] The photoelectric conversion layer can be configured to absorb light in the red wavelength region, green wavelength region, blue wavelength region, infrared wavelength region, or any combination thereof, and can be configured to convert the absorbed light into an electrical signal. It can be an organic photoelectric conversion layer, an inorganic photoelectric conversion layer, an organic / inorganic photoelectric conversion layer, or any combination thereof. The photoelectric conversion layer may include p-type semiconductors and n-type semiconductors, and the p-type and n-type semiconductors can form a pn junction.

[0113] The active layer 133 (e.g., photoelectric conversion layer) may include a first compound as a p-type semiconductor or an n-type semiconductor.

[0114] The first compound can be a light absorber that selectively absorbs light in a specific (or, alternatively, predetermined) wavelength band in the visible light region. For example, the first compound can selectively absorb light in the green wavelength band. For example, the maximum absorption wavelength of the first compound (λ) max It can be between approximately 500 nm and 600 nm, and can have a band gap of approximately 2.0 to 2.5 eV.

[0115] For example, the first compound may be a p-type semiconductor, which may be an organic material according to chemical formula 1 having a core structure including an electron-donating portion EDM, a π-conjugated connection portion LM and an electron-accepting portion EAM.

[0116] [Chemical Formula 1]

[0117] EDM-LM-EAM

[0118] In chemical formula 1,

[0119] EDM can be used for the electron-emitting part.

[0120] EAM can be an electron-receiving part, and

[0121] LM can be a π-conjugate connection that connects the electron-donating part and the electron-receiving part.

[0122] For example, the active layer 133 (e.g., photoelectric conversion layer or light-emitting layer) may include a first compound represented by chemical formula 2 as a p-type semiconductor.

[0123] [Chemical Formula 2]

[0124]

[0125] In chemical formula 2,

[0126] X can be O, S, Se, Te, SO, SO2, or CR. b R c or SiR d R e ,

[0127] Ar can be a substituted or unsubstituted C6 to C30 arylene group, a substituted or unsubstituted C3 to C30 heterocyclic group, or a fused ring selected from two or more of these groups.

[0128] Ar 1a and Ar 2a Each can be independently a substituted or unsubstituted C6 to C30 (aryl) group or a substituted or unsubstituted C3 to C30 (heteroaryl) group.

[0129] R 1a To R 3a and R b To R e Each of these can be independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl, a substituted or unsubstituted C1 to C30 alkoxy, a substituted or unsubstituted C6 to C30 aryl, a substituted or unsubstituted C3 to C30 heteroaryl, a halogen, a cyano, or any combination thereof, and

[0130] Ar 1a Ar 2a R 1a and R 2a They can exist independently, or two adjacent ones can be connected to form a loop.

[0131] For example, Ar 1a and Ar 2a Each of these can be independently substituted or unsubstituted phenyl, substituted or unsubstituted naphthyl, substituted or unsubstituted anthraquinyl, substituted or unsubstituted phenanthryl, substituted or unsubstituted pyridinyl, substituted or unsubstituted pyrimidinyl, substituted or unsubstituted pyrazinyl, substituted or unsubstituted quinolinyl, substituted or unsubstituted isoquinolinyl, substituted or unsubstituted naphridinyl, substituted or unsubstituted cyclolinyl, substituted or unsubstituted quinazolinyl, substituted or unsubstituted phthalazinyl, substituted or unsubstituted benzotriazinyl, substituted or unsubstituted pyridopyrazinyl, substituted or unsubstituted pyridopyrimidinyl, or substituted or unsubstituted pyridopyridinyl.

[0132] For example, Ar 1a and Ar 2a They can be connected to each other to form a ring.

[0133] For example, Ar 2a and R 1aThey can be connected to each other to form a ring.

[0134] For example, in addition to the first compound that is a p-type semiconductor, the active layer 133 (e.g., a photoelectric conversion layer) may include an n-type semiconductor, which may be a fullerene or a fullerene derivative, a thiophene or a thiophene derivative, or any combination thereof, but is not limited thereto.

[0135] As described herein, examples of fullerenes may include C60, C70, C76, C78, ​​C80, C82, C84, C90, C96, C240, C540, mixtures thereof, fullerene nanotubes, etc. Fullerene derivatives may refer to compounds of these fullerenes having their substituents. Fullerene derivatives may include substituents such as alkyl (e.g., C1 to C30 alkyl), aryl (e.g., C6 to C30 aryl), heterocyclic groups (e.g., C3 to C30 heterocyclic alkyl), etc. Examples of aryl and heterocyclic groups may be benzene rings, naphthyl rings, anthracene rings, phenanthrene rings, fluorene rings, benzo[9,10]phenanthrene rings, tetraphenyl rings, biphenyl rings, pyrrole rings, furan rings, thiophene rings, imidazole rings, oxazole rings, thiazole rings, pyridine rings, pyrazine rings, pyrimidine rings, pyridazine rings, indazine rings, indole rings, benzofuran rings, benzothiophene rings, isobenzofuran rings, benzimidazole rings, imidazopyridine rings, quinazine rings, quinoline rings, phthalazine rings, naphthidine rings, quinoxaline rings, isoquinoline rings, carbazole rings, phenanthridine rings, acridine rings, phenanthrene-rhein rings, thiamethoxazine rings, phenoxthiamethoxazine rings, or phenazine rings.

[0136] Thiophene derivatives may be represented, for example, by chemical formula 3 or chemical formula 4, but are not limited thereto.

[0137] [Chemical Formula 3]

[0138]

[0139] [Chemical Formula 4]

[0140] EWG 1 -T 1 -T 2 -T 3 -EWG 2

[0141] In chemical formulas 3 and 4,

[0142] T 1 T 2 and T 3 It can be an aromatic ring including substituted or unsubstituted thiophene moieties.

[0143] T 1 T 2 and T 3 They can exist independently or they can merge with each other.

[0144] X 3 To X 8 Each of these groups can be independently hydrogen, deuterium, substituted or unsubstituted C1 to C30 alkyl, substituted or unsubstituted C1 to C30 alkoxy, substituted or unsubstituted C6 to C30 aryl, substituted or unsubstituted C3 to C30 heterocyclic group, cyano, or any combination thereof, and

[0145] EWG 1 and EWG 2 Each can be an electron-withdrawing group, for example, a cyano group or a cyano-containing group.

[0146] For example, in chemical formula 3, X 3 To X 8 At least one of them may be an electron-withdrawing group, such as a cyano or a cyano-containing group.

[0147] The auxiliary layers 134a and 134b may be, for example, charge-assisted layers, and may be, for example, hole transport layers, hole injection layers, electron blocking layers, electron transport layers, electron injection layers, hole blocking layers, or any combination thereof, but the exemplary embodiments are not limited thereto.

[0148] The auxiliary layers 134a and 134b may comprise, for example, organic materials, inorganic materials, or organic / inorganic materials. The organic materials may be organic compounds having hole or electron properties, and the inorganic materials may be, for example, metal oxides such as molybdenum oxide, tungsten oxide, or nickel oxide.

[0149] The hole transport layer (HTL) may include, for example, poly(3,4-ethylenedioxythiophene):poly(sulfonated styrene) (PEDOT:PSS), polyarylamine (polyarylamine), poly(N-vinylcarbazole), polyaniline, polypyrrole, N,N,N',N'-tetra(4-methoxyphenyl)-benzidine (TPD), 4-bis[N-(1-naphthyl)-N-phenyl-amino]biphenyl (α-NPD), m-MTDATA, 4,4',4”-tris(N-carbazolyl)-triphenylamine (TCTA), and any combination thereof, but not limited thereto.

[0150] The electron blocking layer (EBL) may include, for example, poly(3,4-ethylenedioxythiophene):poly(sulfonated styrene) (PEDOT:PSS), polyarylamine (polyarylamine), poly(N-vinylcarbazole), polyaniline, polypyrrole, N,N,N',N'-tetra(4-methoxyphenyl)-benzidine (TPD), 4-bis[N-(1-naphthyl)-N-phenyl-amino]biphenyl (α-NPD), m-MTDATA, 4,4',4”-tris(N-carbazolyl)-triphenylamine (TCTA), and any combination thereof, but not limited thereto.

[0151] The electron transport layer (ETL) may include, for example, 1,4,5,8-naphthalene-tetracarboxylic acid dianhydride (NTCDA), copper bath (BCP), LiF, Alq3, Gaq3, Inq3, Znq2, Zn(BTZ)2, BeBq2, and any combination thereof, but is not limited thereto.

[0152] Hole blocking layer (HBL) may include, for example, 1,4,5,8-naphthalene-tetracarboxylic acid dianhydride (NTCDA), copper bath (BCP), LiF, Alq3, Gaq3, Inq3, Znq2, Zn(BTZ)2, BeBq2, and any combination thereof, but not limited thereto.

[0153] Either auxiliary layer 134a or 134b can be omitted.

[0154] Each unit element 130 can be independently controlled and / or driven by each pixel circuit 120.

[0155] Pixel circuitry 120 can be repeatedly arranged on stretchable substrate 110a and can be arranged around each pixel PX to independently control and / or drive each pixel PX. Pixel circuitry 120 may include elements necessary for independently controlling and / or driving each pixel (or sub-pixel) and may include, for example, multiple thin-film transistors (TFTs) and capacitors.

[0156] Multiple thin-film transistors (TFTs) may include at least one switching thin-film transistor (switching TFT) and at least one driving thin-film transistor (driving TFT).

[0157] Figure 9 This is a schematic illustration of implementation methods based on some examples. Figure 6 and 7 A perspective view of the thin-film transistors included in the pixel circuitry 120 of the stretchable panel 1000 shown. Figure 10 and 11 This illustrates implementation methods based on some examples. Figure 9 A schematic diagram of part "C" of a thin-film transistor.

[0158] Reference Figure 9 and 10 The thin-film transistor 120-1 included in the pixel circuit 120 includes a second gate electrode 124b, a second gate insulating layer 140b, a second source electrode 173b, a second drain electrode 175b, and a second polymer semiconductor layer 154b.

[0159] The second gate electrode 124b may be made of (for example, may include at least in part) metals such as gold (Au), copper (Cu), nickel (Ni), aluminum (Al), molybdenum (Mo), chromium (Cr), tantalum (Ta), titanium (Ti), or any alloy thereof; conductive nanostructures such as nanowires or nanotubes; or any combination thereof, but not limited thereto. For example, the second gate electrode 124b may be a stretchable electrode and may include, for example, a conductive layer having multiple microcracks.

[0160] The second gate insulating layer 140b is formed on the entire surface of the stretchable substrate 110a (e.g., directly or indirectly over the entire upper surface 110as and / or overlapping the entire upper surface 110as in the Z direction perpendicular to the upper surface 110as), and may be disposed between the second gate electrode 124b and the second polymer semiconductor layer 154b (e.g., directly or indirectly therebetween). The second gate insulating layer 140b may be made of (e.g., may at least partially include) an organic insulator, an inorganic insulator, and / or an organic-inorganic insulator, and may include, for example, a stretchable insulator. The second gate insulating layer 140b may have, for example, one, two, or more layers. For example, the second gate insulating layer 140b may be made of (for example, may at least partially include) an elastic polymer, including, for example, polydimethylsiloxane (PDMS), thermoplastic polyurethane (TPU), styrene-ethylene-butene-styrene (SEBS), styrene-ethylene-propylene-styrene (SEPS), styrene-butadiene-styrene (SBS), styrene-isoprene-styrene (SIS), styrene-isobutylene-styrene (SIBS), or any combination thereof, but not limited thereto.

[0161] The second source electrode 173b and the second drain electrode 175b face each other and are electrically connected to the second polymer semiconductor layer 154b, with the second source electrode 173b and the second drain electrode 175b interposed therebetween. The second source electrode 173b and the second drain electrode 175b may be made of (for example, may include at least partially) metals such as gold (Au), copper (Cu), nickel (Ni), aluminum (Al), molybdenum (Mo), chromium (Cr), tantalum (Ta), titanium (Ti), or alloys thereof; conductive nanostructures such as nanowires or nanotubes; or any combination thereof, but not limited thereto. For example, the second source electrode 173b and the second drain electrode 175b may each be independently stretchable electrodes and may include, for example, a conductive layer having multiple microcracks.

[0162] The second polymer semiconductor layer 154b overlaps with the second gate electrode 124b along the thickness direction of the stretchable substrate 110a (e.g., the Z direction perpendicular to the upper surface 110as). The second polymer semiconductor layer 154b may include polymer (polymer chains) 155b oriented in one direction, and the orientation direction D2 of the polymer chains 155b may be parallel or substantially parallel to the second channel length direction L2 extending from the second source electrode 173b to the second drain electrode 175b. Here, the second channel length direction L2 may be the direction in which charge carriers (e.g., electrons) move from the second source electrode 173b to the second drain electrode 175b when a voltage is applied to the second gate electrode 124b. For example, at least... Figure 9 As shown, in some exemplary embodiments, the second source electrode 173b and the second drain electrode 175b may extend in a horizontal direction parallel to (e.g., parallel to its upper surface 110as) the stretchable substrate 110a (e.g., parallel to its upper surface 110as). Figure 9 The second channel length direction L2 can be at least partially overlapping each other in the X direction (as shown), such that it extends parallel to the stretchable substrate 110a (e.g., parallel to its upper surface 110as), for example, in the X direction. However, it will be understood that the relative arrangement of the second source electrode 173b and the second drain electrode 175b with respect to the stretchable substrate 110a, and therefore the direction in which the second channel length direction L2 extends with respect to the stretchable substrate 110a, is not limited to this.

[0163] In this way, since the polymer chains 155b of the second polymer semiconductor layer 154b are oriented parallel to or substantially parallel to the second channel length direction L2, when a voltage is applied to the second gate electrode 124b, the charge carriers (electrons) of the thin-film transistor 120-1 can move more efficiently along the polymer chains 155b, thereby exhibiting a higher charge mobility. Furthermore, even if strain occurs in the second channel length direction L2, it does not significantly affect the alignment of the polymer chains 155b, and therefore exhibits more stable charge transport characteristics. As a result, the stretchable panel 1000 has improved functionality due to the following: the pixel circuit 120 (e.g., the first pixel circuit 120a) of the stretchable panel 1000 is configured to exhibit more stable charge transfer characteristics and / or higher charge mobility to reduce, minimize, or prevent degradation of the display performance of the stretchable panel 1000 due to localized strain in the stretchable panel 1000.

[0164] For example, refer to Figure 11The second polymer semiconductor layer 154b may include a plurality of semiconductor strips 154b-1 extending parallel along one direction (e.g., E2), and each semiconductor strip 154b-1 may include at least a portion of the aforementioned polymer chain 155b. The extension direction E2 of the plurality of semiconductor strips 154b-1 may be parallel or substantially parallel to the second channel length direction L2, and may be the same as or substantially the same as the orientation direction D2 of the polymer chain 155b.

[0165] For example, the strain sensor 300 and the thin-film transistor 120-1 can be formed simultaneously using the same process. Therefore, a stretchable panel 1000 including the strain sensor 300 can be manufactured without additional processes.

[0166] Therefore, the first gate electrode 124a and the second gate electrode 124b may include the same conductor, the first polymer semiconductor layer 154a and the second polymer semiconductor layer 154b may include the same polymer, and the first source electrode 173a and the second source electrode 173b, as well as the first drain electrode 175a and the second drain electrode 175b, may include the same conductor. For example, the first polymer semiconductor layer 154a and the second polymer semiconductor layer 154b may include the same polymer, but only the orientation of the polymers may be different from each other.

[0167] In the following text, further examples of stretchable panels according to some exemplary implementations will be described.

[0168] Figure 12 This is a plan view of a stretchable panel according to some exemplary embodiments, showing... Figure 6 The enlarged portion of the "B" in the text, and Figure 13 It is based on some example implementation methods. Figure 12 Stretchable panel along Figure 12 The cross-sectional view of the cross-sectional line XIII-XIII' in the diagram.

[0169] Reference Figure 12 According to some example implementations (e.g., Figures 6 to 7The stretchable panel 1000 (illustrated in the example embodiment) includes a stretchable region 1000-2 and a non-stretchable region 1000-1, wherein the stretchable region 1000-2 may be a region on the stretchable substrate 110a not covered by the non-stretchable pattern 110b (e.g., exposed from the non-stretchable pattern 110b in the Z direction), and the non-stretchable region 1000-1 may be a region covered by the non-stretchable pattern 110b (e.g., overlapping with the non-stretchable pattern 110b in the Z direction). The non-stretchable pattern 110b may include a plurality of planar patterns 110b-1 and a plurality of bridging patterns 110b-2, wherein a plurality of unit elements 130 defining a plurality of pixels PX are disposed on the plurality of planar patterns 110b-1. The stretchable substrate 110a, the non-stretchable pattern 110b, the planar patterns 110b-1, the bridging patterns 110b-2, the unit elements 130, and the strain sensor 300 are as described above, for example, regarding... Figures 6 to 7 The example implementation shown is the same as that described.

[0170] However, compared with some example implementations (including) Figures 6 to 7 The stretchable panel 1000 shown in the example implementation differs from some example implementations (including...). Figures 12 to 13 The stretchable panel 1000 (illustrated in the example embodiment) includes pixel circuits 120 electrically connected to each unit element 130, wherein the pixel circuits 120 include a first pixel circuit 120a and a second pixel circuit 120b separated from each other, and further include connection electrodes 140 connecting the first pixel circuit 120a and the second pixel circuit 120b. At least a portion of the first pixel circuit 120a or the second pixel circuit 120b may be in the stretchable region 1000-2.

[0171] Pixel circuitry 120 may be repeatedly arranged on a stretchable substrate 110a (e.g., on the upper surface 110as) and may be disposed around each pixel PX to independently control and / or drive each pixel PX. Pixel circuitry 120 may include elements configured to independently control and / or drive each pixel (or sub-pixel) and may include, for example, a plurality of thin-film transistors (TFTs) and capacitors. The plurality of thin-film transistors (TFTs) may include at least one switching thin-film transistor (switching TFT) and at least one driving thin-film transistor (driving TFT).

[0172] Each pixel circuit 120 may be disposed in the center of a pixel PX and includes a first pixel circuit 120a and a second pixel circuit 120b that are separated from each other (e.g., isolated from each other to avoid direct contact) but electrically connected to each other. At least a portion of the first pixel circuit 120a or the second pixel circuit 120b may be in the stretchable region 1000-2.

[0173] For example, the first pixel circuit 120a may be formed in an unstretchable region 1000-1 on an unstretchable pattern 110b, and the second pixel circuit 120b may be formed on a stretchable substrate 110a on which the unstretchable pattern 110b is not formed and may be disposed in a stretchable region 1000-2. For example, the first pixel circuit 120a may include an unstretchable thin-film transistor (unstretchable TFT) and a capacitor, and the second pixel circuit 120b may include a stretchable thin-film transistor (stretchable TFT).

[0174] For example, one of the first pixel circuit 120a or the second pixel circuit 120b may be a driving thin-film transistor, and the other of the first pixel circuit 120a or the second pixel circuit 120b may be a switching thin-film transistor.

[0175] Figure 14 This is a schematic illustration of implementation methods based on some examples. Figure 12 and Figure 13 A perspective view of the pixel circuitry (e.g., the second pixel circuitry) of the stretchable panel shown, and Figure 15 and 16 This illustrates implementation methods based on some examples. Figure 14 A schematic diagram of part D of the second pixel circuit.

[0176] For example, the first pixel circuit 120a may be a driving thin-film transistor, and may include a second gate electrode 124b, a second gate insulating layer 140b, a second source electrode 173b, a second drain electrode 175b, and a second polymer semiconductor layer 154b, such as Figures 9 to 11 As shown in the figure. The second polymer semiconductor layer 154b may include polymer (polymer chain) 155b oriented in one direction, and the orientation direction D2 of the polymer chain 155b may be substantially parallel to the second channel length direction L2 from the second source electrode 173b to the second drain electrode 175b.

[0177] For example, refer to Figure 14 The second pixel circuit 120b may be a switching thin-film transistor, and may include a third gate electrode 124c, a third gate insulating layer 140c, a third source electrode 173c, a third drain electrode 175c, and a third polymer semiconductor layer 154c, such as Figures 14 to 16 As shown in the image.

[0178] The third gate electrode 124c may be made of (for example, at least in part) metals such as gold (Au), copper (Cu), nickel (Ni), aluminum (Al), molybdenum (Mo), chromium (Cr), tantalum (Ta), titanium (Ti), or any alloy thereof; conductive nanostructures such as nanowires or nanotubes; or any combination thereof, but not limited thereto. For example, the third gate electrode 124c may be a stretchable electrode and may include, for example, a conductive layer having multiple microcracks.

[0179] The third gate insulating layer 140c may be formed on the entire surface of the stretchable substrate 110a and may be disposed between the third gate electrode 124c and the third polymer semiconductor layer 154c. The third gate insulating layer 140c may be made of an organic insulator, an inorganic insulator, and / or an organic-inorganic insulator, and may include, for example, a stretchable insulator. The third gate insulating layer 140c may have, for example, one, two, or more layers. For example, the third gate insulating layer 140c may be made of (for example, may at least partially include) an elastic polymer, including, for example, polydimethylsiloxane (PDMS), thermoplastic polyurethane (TPU), styrene-ethylene-butene-styrene (SEBS), styrene-ethylene-propylene-styrene (SEPS), styrene-butadiene-styrene (SBS), styrene-isoprene-styrene (SIS), styrene-isobutylene-styrene (SIBS), or any combination thereof, but not limited thereto.

[0180] The third source electrode 173c and the third drain electrode 175c may face each other with the third polymer semiconductor layer 154c therebetween, and may be electrically connected to the third polymer semiconductor layer 154c. The third source electrode 173c and the third drain electrode 175c may be made of (for example, at least in part) metals such as gold (Au), copper (Cu), nickel (Ni), aluminum (Al), molybdenum (Mo), chromium (Cr), tantalum (Ta), titanium (Ti), or any alloy thereof; conductive nanostructures such as nanowires or nanotubes; or any combination thereof, but not limited thereto. For example, the third source electrode 173c and the third drain electrode 175c may each be independently stretchable electrodes, and may include, for example, a conductive layer having multiple microcracks.

[0181] The third polymer semiconductor layer 154c overlaps with the third gate electrode 124c along the thickness direction of the stretchable substrate 110a (e.g., the Z direction perpendicular to the upper surface 110as). The third polymer semiconductor layer 154c may include polymer (polymer chains) 155c oriented in one direction, and the orientation direction D3 of the polymer chains 155c may be parallel to or substantially parallel to the third channel length direction L3 extending from the third source electrode 173c to the third drain electrode 175c. Here, the third channel length direction L3 may be the direction in which charge carriers (e.g., electrons) move from the third source electrode 173c to the third drain electrode 175c when a voltage is applied to the third gate electrode 124c. At least as Figure 14 As shown, in some exemplary embodiments, the third source electrode 173c and the third drain electrode 175c may extend in a horizontal direction parallel to (e.g., parallel to its upper surface 110as) the stretchable substrate 110a (e.g., parallel to its upper surface 110as). Figure 14 The third channel length direction L3 can be at least partially overlapping each other in the X direction (as shown), such that it can extend parallel to the stretchable substrate 110a (e.g., parallel to its upper surface 110as), for example, in the X direction. However, it will be understood that the relative arrangement of the third source electrode 173c and the third drain electrode 175c with respect to the stretchable substrate 110a, and therefore the direction in which the third channel length direction L3 extends with respect to the stretchable substrate 110a, is not limited to this.

[0182] Thus, since the polymer chains 155c of the third polymer semiconductor layer 154c are oriented parallel or substantially parallel to the length direction L3 of the third channel, when a voltage is applied to the third gate electrode 124c, the charge (electrons) of the second pixel circuit 120b can move more efficiently along the polymer chains 155c, thereby exhibiting a higher charge mobility. Furthermore, even if strain occurs in the length direction L3 of the third channel, it does not significantly affect the alignment of the polymer chains 155c, and therefore exhibits more stable charge transport characteristics. As a result, the stretchable panel 1000 has improved functionality due to the pixel circuit 120 (e.g., the second pixel circuit 120b) of the stretchable panel 1000 being configured to exhibit more stable charge transfer characteristics and / or higher charge mobility to reduce, minimize, or prevent degradation of the display performance of the stretchable panel 1000 due to localized strain in the stretchable panel 1000.

[0183] For example, refer to Figure 16The third polymer semiconductor layer 154c may include a plurality of semiconductor strips 154c-1 extending parallel along a direction (e.g., E3), and each semiconductor strip 154c-1 may include at least a portion of the aforementioned polymer chain 155c. The extension direction E3 of the plurality of semiconductor strips 154c-1 may be parallel to or substantially parallel to the third channel length direction L3, and may be the same as or substantially the same as the orientation direction D3 of the polymer chain 155c.

[0184] For example, in addition to polymer (polymer chain) 155c, the third polymer semiconductor layer 154c may further include a two-dimensional semiconductor material. The two-dimensional semiconductor material may include at least one metallic element (such as Mo, W, Nb, Ta, Pt, Pd, Co, Cr, Cu, or Ni) and at least one chalcogenide element (such as S, Se, or Te). For example, the two-dimensional semiconductor material may include MoS2, MoSe2, MoSSe, MoSTe, Mo... (1-x) W x S2, Mo (1-x) W x Se2, Mo (1-x) W x Te2, Mo (1-x) Nb x S2, Mo (1-x) Nb x Se2, Mo (1-x) Ta x S2, Mo (1-x) Ta x Se2, Mo (1-x) W x SSe, MoTe2, WS2, WSe2, WSSe, WTe2, WSTe, W (1-x) Nb x S2, W (1-x) Nb x Se2, PtS2, PtSe2, PtTe2, PdSe2, TaS2, TaSe2, Ta (1-x) W x S2, Ta (1-x) W x Se2 (here, 0≤x≤1), and / or any combination thereof, but not limited thereto.

[0185] For example, the third polymer semiconductor layer 154c may further include an elastomer. The elastomer may include, for example, polydimethylsiloxane (PDMS), styrene-ethylene-butene-styrene (SEBS), styrene-ethylene-propylene-styrene (SEPS), styrene-butadiene-styrene (SBS), styrene-isoprene-styrene (SIS), styrene-isobutylene-styrene (SIBS), and / or any combination thereof, but is not limited thereto.

[0186] For example, the strain sensor 300 can be formed simultaneously with the first pixel circuit 120a and / or the second pixel circuit 120b using the same process. Therefore, a stretchable panel 1000 including the strain sensor 300 can be manufactured without additional processes.

[0187] In a stretchable panel 1000 according to some exemplary embodiments, a portion of a plurality of thin-film transistors included in each pixel circuit 120 is disposed in a region (stretchable region) different from that of the pixel PX, such that the area occupied by the thin-film transistors in the pixel PX can be reduced compared to a structure in which all thin-film transistors are disposed in each pixel PX, thereby overcoming the limitation of pixel PX size reduction and effectively reducing pixel size.

[0188] Specifically, according to some exemplary embodiments, the stretchable panel 1000 can ensure a separate area (e.g., stretchable area 1000-2) for providing stretchability, and therefore, the area occupied by the pixels PX relative to the total area of ​​the stretchable substrate 110a can be inevitably reduced compared to a conventional panel (non-stretchable panel) using a glass substrate.

[0189] Meanwhile, typically, the size of pixel PX is not smaller than the area occupied by pixel circuit 120. In some exemplary embodiments, by overcoming this limitation and arranging a portion of pixel circuit 120 (i.e., a portion of thin-film transistors) in a region different from pixel PX (stretchable region), the area of ​​pixel circuit 120 in pixel PX can be effectively reduced, and therefore, the size of pixel PX can also be effectively reduced. Thus, a stretchable panel 1000 with high resolution (e.g., higher pixel resolution) can be achieved by overcoming the spatial arrangement limitations of stretchable panel 1000 and increasing the number of pixels PX per unit area on stretchable substrate 110a.

[0190] exist Figure 12 and 13 In this illustration, for ease of explanation, the first pixel circuit 120a, the second pixel circuit 120b, and the strain sensor 300 are shown in arbitrary shapes and sizes; however, the shapes and sizes of the shown first pixel circuit 120a, second pixel circuit 120b, and strain sensor 300 may vary. Furthermore, although for ease of explanation, in... Figure 12 and 13 The first pixel circuit 120a, the second pixel circuit 120b, and the strain sensor 300 are shown at any position, but the first pixel circuit 120a can be located anywhere in the non-stretchable region 1000-1 of the stretchable substrate 110a, and the second pixel circuit 120b and the strain sensor 300 can be located anywhere in the stretchable region 1000-2 of the stretchable substrate 110a.

[0191] The connecting electrode 140 can electrically connect the first pixel circuit 120a in the non-stretchable region 1000-1 and the second pixel circuit 120b in the stretchable region 1000-2. The connecting electrode 140 can be disposed above the stretchable region 1000-2 and the non-stretchable region 1000-1. For example, one end of the connecting electrode 140 can be disposed in the stretchable region 1000-2, and the other end of the connecting electrode 140 can be disposed in the non-stretchable region 1000-1. The connecting electrode 140 can be, for example, a stretchable electrode, and the stretchable electrode can include, for example, a conductive polymer, conductive metal particles, liquid metal, cracked metal such as cracked Au, or any combination thereof, but is not limited thereto.

[0192] As described above, in the stretchable panel 1000 according to some exemplary embodiments, at least a portion of the pixel circuitry 120 (e.g., at least a portion of the thin-film transistor) may be disposed in the stretchable region 1000-2, thereby overcoming the limitation of pixel arrangement space caused by the stretchable region 1000-2 and increasing the number of pixels per unit area. For example, the number of pixels per unit area in the stretchable panel 1000 may be greater than or equal to about 150 ppi (pixels per inch), greater than or equal to about 200 ppi, greater than or equal to about 250 ppi, greater than or equal to about 300 ppi, greater than or equal to about 350 ppi, greater than or equal to about 400 ppi, greater than or equal to about 450 ppi, or greater than or equal to about 500 ppi, and may be, for example, about 150 ppi to about 1000 ppi, about 200 ppi to about 1000 ppi, about 250 ppi to about 1000 ppi, about 300 ppi to about 1000 ppi, about 350 ppi to about 1000 ppi, about 400 ppi to about 1000 ppi, about 450 ppi to about 1000 ppi, or about 500 ppi to about 1000 ppi.

[0193] In the following sections, further examples of stretchable panels, implemented according to some of the exemplary embodiments, will be described.

[0194] Figure 17 This is a schematic plan view illustrating an example of a stretchable panel according to some exemplary embodiments, and Figure 18 It is shown Figure 17 A plan view of an example of the arrangement of non-stretchable patterns in a stretchable panel.

[0195] Reference Figure 17 and 18 With some example implementations (including) Figures 6 to 7Similar to the example embodiments shown in 12 to 13, the stretchable panel 1000 according to some example embodiments includes a stretchable region 1000-2 and a non-stretchable region 1000-1, wherein the stretchable region 1000-2 may be a region on the stretchable substrate 110a that is not covered with the non-stretchable pattern 110b, and the non-stretchable region 1000-1 may be a region covered with the non-stretchable pattern 110b.

[0196] However, compared with some example implementations (including) Figures 6 to 7 Unlike the stretchable panel 1000 shown in examples 12 and 13, according to some examples (including...) Figures 17-18 The stretchable panel 1000 (illustrated in the example embodiment) includes a plurality of island patterns 110b-3, wherein the non-stretchable patterns 110b are separated from each other on the stretchable substrate 110a. Each unit element 130 of the array 130A of unit elements is located on each (e.g., separate) island pattern 110b-3 (non-stretchable region 1000-1), and the wiring 500 and strain sensor 300 are mainly located on the stretchable substrate 110a (stretchable region 1000-2).

[0197] Wiring 500 may be primarily disposed in the stretchable regions 1000-2 and electrically connect adjacent unit elements 130 of array 130A between adjacent island patterns 110b-3. For example, wiring 500 may include gate lines extending in a first direction (e.g., the X direction) and data lines and / or drive voltage lines extending in a second direction (e.g., the Y direction), but is not limited thereto. In the figures, wiring 500 is illustratively shown as straight lines extending in the first direction (e.g., the X direction) and the second direction (e.g., the Y direction), but is not limited thereto, and may have stretchable shapes such as wavy shapes, pop-up shapes, or non-planar mesh shapes.

[0198] The aforementioned stretchable panel 1000 can be applied to various fields requiring flexibility and / or stretchability, and can be, for example, a stretchable display panel or a stretchable sensor array. The stretchable panel 1000 can be, for example, a bendable display panel, a foldable display panel, a rollable display panel, wearable devices, skin-type stretchable display panels, skin-like display panels, skin-like sensor arrays, large-area conformal displays, smart clothing, etc., but is not limited thereto.

[0199] Figure 19 This is a schematic diagram illustrating a skin-type stretchable display panel according to some exemplary embodiments.

[0200] Reference Figure 19The aforementioned stretchable panel 1000 may be a skin-type display panel (which is an ultra-thin display panel) and may display specific (or, alternatively, predetermined) information such as various characters and / or images.

[0201] Figure 20 , 21 22 and 23 are schematic diagrams illustrating examples of stretchable display panels according to the examples.

[0202] According to some exemplary embodiments, the stretchable display panel 2000 can be configured to be flexibly deformable by a user or external force by introducing a structurally deformable portion into a screen for displaying images. In this document, the structurally deformable portion can be at least a portion inside the screen.

[0203] Reference Figure 20 and 21 According to some exemplary embodiments, the stretchable display panel 2000 may be a foldable display panel, the screen of which may be folded once or more in a specific (or, alternatively, predetermined) direction. Figure 20 The foldable display panel shown is a single-axis foldable display panel whose screen can be folded along one axis A, and Figure 21 The foldable display panel shown is a multi-axis foldable display panel whose screen can be folded along two axes A. However, the inventive concept is not limited to this, and the number of axes A can be three or more. Figure 20 The invention is shown as an inward-folding type in which the screen folds inward, but the concept is not limited thereto, and can be similarly applied to an outward-folding type in which the screen folds outward.

[0204] refer to Figure 22 According to some exemplary embodiments, the stretchable display panel 2000 may be a flexible display panel capable of bending the screen along a specific (or, alternatively, predetermined) direction. See also... Figure 23 According to some exemplary embodiments, the stretchable display panel 2000 may be a rollable display panel that can be rolled up in a specific (or, alternatively, predetermined) direction.

[0205] Reference Figures 20 to 23 The stretchable display panel 2000 can be folded, bent, or rolled along at least one axis A extending in a first direction D10. The stretchable display panel 2000 may include a deformable segment C that can be folded, bent, or rolled along axis A, and a non-deformable segment NC other than the deformable segment C.

[0206] The deformable segment C may be a folded segment, a bent segment, or a rolled segment, deforming into a curve around axis A, and one or more of these may be included in the stretchable display panel 2000. The deformable segment C may be an area defining a radius of curvature (which refers to the degree to which folding, bending, or rolling can be performed to its maximum value without substantial damage) and an area where stress concentrates when repeatedly folded, bent, or rolled. Stress may act on the deformable segment C in the direction of repeated folding, bending, or rolling (e.g., in a second direction D20 perpendicular to or substantially perpendicular to the first direction D10). The non-deformable segment NC may be a flat segment or have relatively smaller stress than the deformable segment C, but the inventive concept is not limited thereto.

[0207] The deformable segment C of the stretchable display panel 2000 may include Figures 6 to 18 The stretchable panel 1000 shown includes a non-stretchable region 1000-1 and a stretchable region 1000-2.

[0208] The stretchable region 1000-2 is a region capable of flexibly responding to external forces (such as torsion, compression, and tension), and as described above, may include an elastomer with a relatively low modulus of elasticity, and thus provide stretchability to the deformable segment C of the stretchable display panel 2000 to reduce stresses acting during repeated folding, bending, or rolling, thereby preventing, minimizing, or reducing damage in the deformable segment C.

[0209] The non-stretchable region 1000-1 is a region that is substantially undeformed or very slightly deformed due to its relatively high resistance to external forces (such as torsion, compression, and tension), and may include: a specific material comprising organic materials, inorganic materials, organic / inorganic materials, or any combination thereof, wherein said specific material has a relatively high elastic modulus, as described above.

[0210] Unlike the deformable segment C, the non-deformable segment NC of the stretchable display panel 2000 may not include a separate stretchable region 1000-2, and may include a non-stretchable region 1000-1. Therefore, the non-deformable segment NC of the stretchable display panel 2000 may be covered with a non-stretchable pattern 110b on the stretchable substrate 110a, and the entire non-deformable segment NC may be covered with, for example, a plate-shaped non-stretchable pattern 110b.

[0211] As described above, the stretchable display panel 2000 according to some exemplary embodiments is manufactured by providing a stretchable region 1000-2 in a deformable segment C, such as a folding segment, bending segment, or rolling segment, to effectively reduce the stress applied during repeated folding, bending, or rolling, thereby preventing, minimizing, or reducing damage in the deformable segment C. Furthermore, this reduction in stress applied in the deformable segment C enables a foldable, bendable, or rollable display panel with small curvatures, such as less than or equal to about 1 mm, less than or equal to about 0.8 mm, less than or equal to about 0.5 mm, less than or equal to about 0.3 mm, less than or equal to about 0.2 mm, or less than or equal to about 0.1 mm and / or greater than about 0.01 mm, greater than about 0.05 mm, greater than about 0.1 mm, etc.

[0212] Figure 24A , 24B Figures 2 and 24C are schematic diagrams illustrating skin-type sensor arrays according to some exemplary embodiments.

[0213] refer to Figures 24A to 24C According to the example, the skin-type sensor array 3000 can be an attachable biometric sensor array and may include the aforementioned stretchable panel 1000. The skin-type sensor array 3000 can be attached to a biological surface such as skin, a living organism such as an organ, or an indirect means of contact with a living organism such as clothing to sense and measure biological information such as biosignals. For example, the biometric sensor array includes, but is not limited to, electroencephalogram (EEG) sensors, electrocardiogram (ECG) sensors, blood pressure (BP) sensors, electromyography (EMG) sensors, blood glucose (BG) sensors, photoplethysmography (PPG) sensors, accelerometers, RFID antennas, inertial sensors, activity sensors, strain sensors, motion sensors, or any combination thereof. The skin-type sensor array 3000 (e.g., a biometric sensor array) can be attached to a living organism in a very thin patch or strip form to monitor biometric information in real time. For example, the skin-type sensor array 3000 may be a sensor array including a photoplethysmography (PPG) sensor, and the biometric information may include heart rate, oxygen saturation, pressure, arrhythmia, blood pressure, etc., and the biometric information can be obtained by analyzing the waveform of the electrical signal.

[0214] The aforementioned stretchable panel 1000 and stretchable display panel 2000, or the skin-type sensor array 3000 (e.g., biosensor array) including the stretchable panel 1000, may be included in a variety of electronic devices, and the electronic devices may further include a processor (not shown) and a memory (not shown).

[0215] Electronic devices may include, but are not limited to, mobile phones, video phones, smartphones, smart tablets, smartwatches, digital cameras, tablet PCs, laptop PCs, laptop computers, computer monitors, wearable computers, televisions, digital broadcasting terminals, e-books and personal digital assistants (PDAs), PMPs (portable multimedia players), EDAs (enterprise digital assistants), head-mounted displays (HMDs), in-vehicle navigation systems, the Internet of Things (IoT), the Internet of Everything (IoE), security devices, and medical devices.

[0216] In the following description, some exemplary embodiments are shown in more detail with reference to examples. However, the scope of the inventive concept is not limited to these embodiments.

[0217] Manufacturing of stretchable equipment

[0218] Example 1

[0219] Au was thermally deposited on a styrene-ethylene-butene-styrene (SEBS) substrate to form a gate electrode, followed by application of a SEBS solution and annealing at 100°C for 0.5 hours to form a gate insulator. Subsequently, the gate insulator was patterned using a photolithography process to form a plurality of trenches extending in one direction (a first direction) with approximately 5 μm spacing, each trench having a width of approximately 10 μm and a depth of approximately 30 μm. Then, a polymer solution of a polymer represented by chemical formula A (weight average molecular weight: 210,000) and SEBS (elastomer) (Tuftec H1052, Asahi Kasei) at a weight ratio of 3:7 (0.6 wt% concentration in chlorobenzene) and the polymer was passed through the plurality of trenches, followed by heat treatment at 100°C for 1 hour under a nitrogen atmosphere (polymer orientation process) to form a polymer semiconductor layer, wherein the polymer is oriented parallel to the first direction. Subsequently, Au is thermally deposited on the polymer semiconductor layer to form source and drain electrodes along the channel length direction (source-drain direction), wherein the channel length direction is set as a second direction perpendicular to the first direction, thus fabricating a thin-film transistor. The thin-film transistor has a width-to-length ratio of 25 / 10.

[0220] <Chemical Formula A>

[0221]

[0222] Reference Example 1

[0223] Thin-film transistors were manufactured in the same manner as in Example 1, except that the polymer orientation process was not performed.

[0224] See Example 2

[0225] The thin-film transistor was manufactured in the same manner as in Example 1, except that the channel length direction (source-drain direction) of the thin-film transistor was set to the same direction (first direction) as the polymer orientation direction of the polymer semiconductor layer.

[0226] Evaluation I

[0227] The orientation degree of the polymer semiconductor layer of the thin-film transistor according to Example 1 and Reference Example 1 was evaluated.

[0228] After analyzing the thin film surface by atomic force microscopy (AFM), the orientation degree of the polymer semiconductor layer was quantified by using two-dimensional fast Fourier transform (2D-FFT).

[0229] The results are shown in Table 1.

[0230] Table 1

[0231] <![CDATA[2D FFT<cos 2 θ>]]> Example 0.6 Reference Example 1 0.51

[0232] Referring to Table 1, the polymer semiconductor layer of the thin-film transistor according to Example 1 is isotropic and is not oriented in a particular (or, alternatively, predetermined) direction, but the polymer semiconductor layer of the thin-film transistor according to Example 1 is oriented in one direction.

[0233] Evaluation II

[0234] The electrical characteristics of the thin-film transistors according to Example 1 and Reference Example 2 were evaluated when stretched at a stretch rate (0 to 25%) in a direction (P) parallel to the source-drain electrode direction (channel length direction) and in a direction (V) perpendicular to the source-drain electrode direction, respectively. Here, the stretch rate refers to the rate of change of length relative to the initial length, and the stretching direction is the strain direction.

[0235] Figure 25 This is a graph showing the change in current characteristics according to the stretching ratio when the thin-film transistor according to Embodiment 1 is stretched in a direction parallel to the source-drain electrode direction (channel length direction) and in a direction perpendicular to the source-drain electrode direction (channel length direction). Figure 26 This is a graph showing the change in current characteristics according to the stretching ratio when the thin-film transistor according to Reference Example 2 is stretched in a direction parallel to the source-drain electrode direction (channel length direction) and in a direction perpendicular to the source-drain electrode direction (channel length direction).

[0236] Reference Figure 25 As the stretching ratio increases, the thin-film transistor according to Example 1 exhibits greater differences in electrical characteristics depending on the stretching direction. Therefore, it can be confirmed that the thin-film transistor according to Example 1 serves as a strain sensor configured to detect the stretching direction and stretching dimension.

[0237] Conversely, refer to Figure 26 According to Reference Example 2, the thin-film transistor does not show a greater difference or trend in electrical characteristics depending on the stretching ratio and stretching direction. Therefore, it can be confirmed that the thin-film transistor according to Reference Example 2 is difficult to apply as a strain sensor configured to detect strain.

[0238] While the inventive concept has been described in conjunction with exemplary embodiments now considered practical, it will be understood that the inventive concept is not limited to such exemplary embodiments. Rather, the inventive concept is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.

Claims

1. A stretchable panel, including: Stretchable substrate; and Strain sensor on the stretchable substrate The strain sensor includes First gate electrode, A first polymer semiconductor layer, which overlaps with the first gate electrode along the thickness direction of the stretchable substrate, comprises polymer chains of the first polymer semiconductor layer, and A first source electrode and a first drain electrode, the first source electrode and the first drain electrode being electrically connected to the first polymer semiconductor layer and facing each other with the first polymer semiconductor layer therebetween, and The polymer chains of the first polymer semiconductor layer are oriented to intersect with the length direction of the first channel extending from the first source electrode to the first drain electrode.

2. The stretchable panel according to claim 1, wherein, The first polymer semiconductor layer includes a plurality of semiconductor strips extending perpendicular to the length direction of the first channel, and Each of the plurality of semiconductor strips includes at least a portion of the polymer chain of the first polymer semiconductor layer.

3. The stretchable panel of claim 1, further comprising a non-stretchable pattern on the stretchable substrate and having a higher elastic modulus than the stretchable substrate. The stretchable panel includes The stretchable substrate and the non-stretchable pattern are arranged such that their non-stretchable regions overlap. Stretchable regions other than the non-stretchable regions, and The strain sensor is located in the stretchable region.

4. The stretchable panel according to claim 3, wherein The strain sensor includes first and second strain sensors arranged separately from each other in the tensile region, and The first channel length direction of the second strain sensor is different from that of the first strain sensor.

5. The stretchable panel of claim 3, further comprising a plurality of unit elements and a plurality of pixel circuits electrically connected to the plurality of unit elements. The plurality of unit elements include light-emitting diodes, photodiodes, or any combination thereof, and The plurality of unit elements are located in the non-stretchable region.

6. The stretchable panel of claim 5, wherein at least a portion of at least one pixel circuit of the plurality of pixel circuits is located in the non-stretchable region.

7. The stretchable panel of claim 5, wherein at least one portion of the plurality of pixel circuits is in the non-stretchable region, and separate portions of the at least one pixel circuit are in the stretchable region.

8. The stretchable panel according to claim 5, wherein At least one pixel circuit of the plurality of pixel circuits includes a thin-film transistor. The thin-film transistor includes Second gate electrode, A second polymer semiconductor layer overlaps with the second gate electrode along the thickness direction of the stretchable substrate. The second polymer semiconductor layer includes polymer chains of the second polymer semiconductor layer, and A second source electrode and a second drain electrode, the second source electrode and the second drain electrode being electrically connected to the second polymer semiconductor layer and facing each other with the second polymer semiconductor layer therebetween, and The polymer chains of the second polymer semiconductor layer are oriented parallel to the second channel length direction extending from the second source electrode to the second drain electrode.

9. The stretchable panel of claim 8, wherein the first polymer semiconductor layer and the second polymer semiconductor layer comprise the same polymer.

10. A stretchable panel, including: Stretchable substrate; and A first thin-film transistor and a second thin-film transistor are disposed on the stretchable substrate. The first thin-film transistor includes First gate electrode, A first polymer semiconductor layer, which overlaps with the first gate electrode along the thickness direction of the stretchable substrate, comprises polymer chains of the first polymer semiconductor layer, and A first source electrode and a first drain electrode, the first source electrode and the first drain electrode being electrically connected to the first polymer semiconductor layer and facing each other with the first polymer semiconductor layer therebetween. The second thin-film transistor includes Second gate electrode, A second polymer semiconductor layer overlaps with the second gate electrode along the thickness direction of the stretchable substrate. The second polymer semiconductor layer includes polymer chains of the second polymer semiconductor layer, and A second source electrode and a second drain electrode are electrically connected to the second polymer semiconductor layer and face each other with the second polymer semiconductor layer therebetween. The polymer chains of the first polymer semiconductor layer are oriented to intersect with the length direction of the first channel extending from the first source electrode to the first drain electrode. The polymer chains of the second polymer semiconductor layer are oriented parallel to the second channel length direction extending from the second source electrode to the second drain electrode.

11. The stretchable panel according to claim 1 or 10, wherein the polymer chains of the first polymer semiconductor layer are oriented at an angle of 45 degrees to 135 degrees relative to the length direction of the first channel.

12. The stretchable panel according to claim 1 or 10, wherein the polymer chains of the first polymer semiconductor layer are oriented perpendicular to the length direction of the first channel.

13. The stretchable panel of claim 10, further comprising a non-stretchable pattern on the stretchable substrate and having a higher elastic modulus than the stretchable substrate. The stretchable panel includes The stretchable substrate and the non-stretchable pattern are arranged such that their non-stretchable regions overlap. Stretchable regions other than the aforementioned non-stretchable regions. Wherein the first thin-film transistor is located in the stretchable region, and The second thin-film transistor is located in the non-stretchable region.

14. The stretchable panel of claim 13, further comprising a third thin-film transistor electrically connected to the second thin-film transistor. The third thin-film transistor includes Third gate electrode, A third polymer semiconductor layer, which overlaps with the third gate electrode along the thickness direction of the stretchable substrate, the third polymer semiconductor layer comprising polymer chains of the third polymer semiconductor layer, and A third source electrode and a third drain electrode, the third source electrode and the third drain electrode being electrically connected to the third polymer semiconductor layer and facing each other with the third polymer semiconductor layer therebetween. The polymer chains of the third polymer semiconductor layer are oriented parallel to the third channel length direction extending from the third source electrode to the third drain electrode, and The third thin-film transistor is located in the stretchable region.

15. The stretchable panel of claim 14, wherein the first polymer semiconductor layer and the third polymer semiconductor layer comprise the same polymer.

16. The stretchable panel of claim 15, wherein... The first polymer semiconductor layer includes a plurality of semiconductor strips extending perpendicular to the length direction of the first channel and comprising the polymer, and The third polymer semiconductor layer includes a plurality of separate semiconductor strips extending parallel to the length direction of the third channel and comprising the polymer.

17. The stretchable panel of claim 13, further comprising a unit element electrically connected to the second thin-film transistor. The unit element mentioned above includes a light-emitting diode, a photodiode, or any combination thereof, and The unit element is located in the non-stretchable region.

18. An electronic device comprising a stretchable panel according to any one of claims 1 to 17.

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