Solar cell, photovoltaic module, and method for manufacturing solar cell

Abstract

The invention relates to a solar cell, a photovoltaic module and a manufacturing method of the solar cell. The solar cell comprises a substrate, an ultraviolet isolation layer and an antireflection film. The ultraviolet isolation layer is arranged on at least one side of the substrate. The antireflection film is arranged on the side, away from the substrate, of the ultraviolet isolation layer. The solar cell is provided with the ultraviolet isolation layer located on the inner side of the antireflection film. The ultraviolet isolation layer serves as a part of the solar cell and can cut off ultraviolet rays which penetrate through the antireflection film and enter the solar cell, so that the ultraviolet rays are difficult to continue to be transmitted inwards. Therefore, under the isolation protection of the ultraviolet isolation layer, the probability of generating hydrogen-induced dangling bonds and the like due to the fact that ultraviolet rays damage silicon-hydrogen bonds is reduced, and the UVID problem of the solar cell is effectively relieved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of photovoltaic technology, in particular to a solar cell, a photovoltaic module and a manufacturing method of the solar cell. BACKGROUND

[0002] Currently, in the photovoltaic technology, UVID (UV Induced Degradation) has become a core challenge for the reliability of photovoltaic modules and an important reference point for customers to choose products. High-efficiency cell technologies such as N-TOPCon are particularly sensitive to UVID. The cell structure is insufficiently resistant to ultraviolet light. High-energy ultraviolet light has high energy. After the high-energy ultraviolet light is absorbed by the cell, it will damage the passivation ability of the cell, for example, it will break the Si-H bond, cause an excess of H to increase the load, and then significantly reduce the open-circuit voltage (Voc) and the fill factor (FF), thereby affecting the long-term power generation stability. According to the RETC “2024 Photovoltaic Module Index Report”, 40% of the module samples showed a power decay of ≥5% in the UVID test. The decay rate of some commercial modules is even as high as 10%-16% in the first three years, far exceeding the industry warranty provisions (usually ≤2% in the first year and ≤0.45% in subsequent years). In high-ultraviolet, high-temperature and high-humidity regions such as the Middle East and Southeast Asia, the decay caused by UVID accelerates, which may shorten the service life of the module and increase the operation and maintenance cost. SUMMARY

[0003] Therefore, it is necessary to provide a solar cell, a photovoltaic module and a manufacturing method of the solar cell capable of alleviating the UVID problem in view of the above problems.

[0004] A solar cell, comprising:

[0005] a substrate;

[0006] an ultraviolet isolation layer disposed on at least one side of the substrate; and

[0007] an antireflection film disposed on a side of the ultraviolet isolation layer away from the substrate.

[0008] In one of the embodiments, the solar cell further comprises a passivation layer disposed between the ultraviolet isolation layer and the substrate.

[0009] In one of the embodiments, the material of the ultraviolet isolation layer has an absorption edge of 200-415 nm.

[0010] In one of the embodiments, the material of the ultraviolet isolation layer comprises at least one of gallium nitride, zinc oxide, titanium dioxide, aluminum nitride and magnesium fluoride.

[0011] In one of the embodiments, the ultraviolet shielding layer is configured to be doped with a fluorescent material; the fluorescent material is capable of absorbing ultraviolet light and emitting visible light under excitation of the ultraviolet light.

[0012] In one of the embodiments, the substrate has a first side and a second side arranged oppositely;

[0013] The ultraviolet shielding layer includes a first ultraviolet shielding layer and a second ultraviolet shielding layer, the first ultraviolet shielding layer is arranged on the first side, and the second ultraviolet shielding layer is arranged on the second side;

[0014] The anti-reflective film includes a first anti-reflective film and a second anti-reflective film, the first anti-reflective film is arranged on a side of the first ultraviolet shielding layer away from the substrate, and the second anti-reflective film is arranged on a side of the second ultraviolet shielding layer away from the substrate.

[0015] In one of the embodiments, the solar cell further includes a passivation layer, the passivation layer includes a first passivation layer and a second passivation layer;

[0016] The first passivation layer is arranged between the first ultraviolet shielding layer and the first side of the substrate, and the second passivation layer is arranged between the second ultraviolet shielding layer and the second side of the substrate.

[0017] In one of the embodiments, the first passivation layer includes an aluminum oxide layer;

[0018] And / or, the second passivation layer includes a tunneling layer and a doped semiconductor layer, the tunneling layer is arranged on the second side, and the doped semiconductor layer is arranged on a side of the tunneling layer away from the substrate.

[0019] A photovoltaic module includes a plurality of solar cells connected in series and / or in parallel, and at least one of the solar cells is the solar cell as described above.

[0020] A method for manufacturing a solar cell includes the following steps:

[0021] Providing a substrate;

[0022] Forming an ultraviolet shielding layer on at least one side of the substrate;

[0023] Forming an anti-reflective film on a side of the ultraviolet shielding layer away from the substrate.

[0024] In one of the embodiments, the step of forming the ultraviolet shielding layer on at least one side of the substrate specifically includes:

[0025] Forming a passivation layer on the substrate;

[0026] Forming the ultraviolet shielding layer on a side of the passivation layer away from the substrate.

[0027] The solar cell, the photovoltaic module and the manufacturing method of the solar cell have the ultraviolet isolation layer inside the antireflection film. The ultraviolet isolation layer, as a part of the solar cell, can cut off the ultraviolet rays entering the inside of the solar cell through the antireflection film, so that the ultraviolet rays are difficult to continue to transmit inward. In this way, under the isolation protection of the ultraviolet isolation layer, the probability of the ultraviolet rays destroying the silicon-hydrogen bond and causing the generation of hydrogen-induced dangling bonds is reduced, and the UVID problem of the solar cell is effectively alleviated. BRIEF DESCRIPTION OF DRAWINGS

[0028] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the drawings needed to be used in the embodiments or prior art description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can also be obtained without creative labor.

[0029] Figure 1 The structure schematic diagram of the solar cell in an embodiment of the present application.

[0030] Figure 2 The flowchart of the manufacturing method of the solar cell in an embodiment of the present application.

[0031] The drawings are explained as follows: 100, solar cell; 10, substrate; 20, ultraviolet isolation layer; 21, first ultraviolet isolation layer; 23, second ultraviolet isolation layer; 30, antireflection film; 31, first antireflection film; 33, second antireflection film; 40, passivation layer; 41, first passivation layer; 43, second passivation layer; 431, tunneling layer; 433, doped semiconductor layer; 50, electrode; 60, emitter. DETAILED DESCRIPTION

[0032] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the specific embodiments of the present application are described in detail below in combination with the drawings. In the following description, a lot of specific details are set forth in order to fully understand the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without departing from the connotation of the present application, so the present application is not limited by the specific embodiments disclosed below.

[0033] In the description of the present application, it should be understood that, if there are terms of "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", and the like, these terms indicate the orientation or positional relationship shown in the drawings, and are only for the convenience of the description and simplification of the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present application.

[0034] In addition, if the term "and / or" appears, "and / or" is only a description of the relationship between the associated objects, and indicates that there can be three relationships, for example, A and / or B, which can represent the relationship between A and B: A exists alone, A and B exist together, and B exists alone. In addition, the character " / " herein generally represents an "or" relationship between the associated objects before and after it. If the terms "first", "second" appear, these terms are only for the purpose of description, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features limited by "first", "second" can explicitly or implicitly include at least one of the features. In the description of the present application, if the term "multiple" appears, the meaning of "multiple" is at least two, such as two, three, four, five, etc., unless otherwise specifically limited.

[0035] In the present application, unless otherwise specifically defined and limited, if the terms "mounting", "connecting", "connecting", "fixing" and the like appear, these terms should be broadly understood. For example, it can be fixedly connected, or it can be detachably connected, or it can be integrated; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium; it can be the internal communication of two elements or the interaction relationship of two elements, unless otherwise specifically limited. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0036] In the present application, unless specifically defined and limited otherwise, if there is a description of a first feature "on" or "under" a second feature, etc., it can mean that the first and second features are in direct contact, or the first and second features are indirectly in contact through an intermediate medium. Moreover, the first feature "above", "over" and "on" the second feature can be that the first feature is directly above or obliquely above the second feature, or only indicates that the first feature is higher in horizontal height than the second feature. The first feature "below", "under" and "under" the second feature can be that the first feature is directly below or obliquely below the second feature, or only indicates that the first feature is lower in horizontal height than the second feature.

[0037] It should be noted that if an element is referred to as "fixed to" or "provided on" another element, it can be directly on the other element or there can be an intermediate element. If an element is considered to be "connected" to another element, it can be directly connected to the other element or there can be an intermediate element. If present, the terms "vertical", "horizontal", "up", "down", "left", "right" and similar expressions used in the present application are for illustrative purposes only and do not represent the only implementation.

[0038] Please refer to Figure 1 The solar cell 100 provided by an embodiment of the present application includes a substrate 10, an ultraviolet isolation layer 20, and an anti-reflection film 30. The ultraviolet isolation layer 20 is arranged on at least one side of the substrate 10. The anti-reflection film 30 is arranged on the side of the ultraviolet isolation layer 20 away from the substrate 10.

[0039] It can be understood that the substrate 10 is a silicon wafer, and specifically can be an N-type silicon wafer or a P-type silicon wafer. In a specific embodiment, the substrate is an N-type silicon wafer.

[0040] The ultraviolet isolation layer 20 and the anti-reflection film 30 can be formed on at least one side of the substrate 10 in a sequential deposition manner. Specifically, the ultraviolet isolation layer 20 can be formed on at least one side of the substrate 10 corresponding to the front side of the solar cell 100. The ultraviolet isolation layer 20 can absorb and isolate ultraviolet rays to prevent the ultraviolet rays from continuing to pass into the interior of the solar cell 100.

[0041] The above-mentioned solar cell 100 has the ultraviolet isolation layer 20 inside the anti-reflection film 30. As part of the solar cell 100, the ultraviolet isolation layer 20 can cut off the ultraviolet rays that pass through the anti-reflection film 30 into the interior of the solar cell 100, making it difficult to continue to pass inward. In this way, under the isolation protection of the ultraviolet isolation layer 20, the probability of the ultraviolet rays destroying the silicon-hydrogen bond and causing the generation of hydrogen-induced dangling bonds is reduced, and the UVID problem of the solar cell 100 is effectively alleviated. As part of the solar cell 100, the ultraviolet isolation layer 20 can be manufactured using a deposition device for producing the solar cell 100, and has a more precise thickness and a higher film layer quality.

[0042] In addition, compared with the mode that the ultraviolet isolation layer 20 is arranged outside the antireflection film 30, the mode that the ultraviolet isolation layer 20 is arranged inside the antireflection film 30 can make the light pass through the antireflection effect of the antireflection film 30 first, so that more photons enter the inside of the cell, and then the ultraviolet isolation layer 20 absorbs the ultraviolet light correspondingly. At the same time, the ultraviolet isolation layer 20 can also be protected by the antireflection film 30 to resist environmental erosion.

[0043] In some embodiments, the absorption edge of the material of the ultraviolet isolation layer 20 is 200 nm-415 nm.

[0044] In this way, the ultraviolet isolation layer 20 can fully cover the ultraviolet light in the wavelength range of 280 nm-400 nm, and effectively absorb and isolate the target ultraviolet light.

[0045] In some embodiments, the material of the ultraviolet isolation layer 20 includes at least one of gallium nitride, zinc oxide, titanium dioxide, aluminum nitride, and magnesium fluoride.

[0046] Among them, gallium nitride (GaN): band gap 3.4 eV, absorption edge 365 nm; zinc oxide (ZnO): band gap 3.3 eV, absorption edge 375 nm; titanium dioxide (TiO2): band gap 3.0 eV-3.2 eV, absorption edge 380 nm-415 nm; aluminum nitride (AlN): band gap about 6.2 eV, absorption edge 200 nm; magnesium fluoride (MgF2): transmission band up to 115 nm, as a window material, absorption needs to be doped or defect engineered.

[0047] In this way, the material of the ultraviolet isolation layer 20 is easy to obtain, and can be selected according to actual needs to manufacture the ultraviolet isolation layer 20 with one suitable material or multiple materials.

[0048] In some embodiments, the solar cell 100 further includes a passivation layer 40, which is arranged between the ultraviolet isolation layer 20 and the substrate 10.

[0049] It can be understood that the passivation layer 40 can be formed on the substrate 10 in a deposition manner, and in the process, the passivation layer 40 should be deposited first, and then the ultraviolet isolation layer 20 is deposited, and the ultraviolet isolation layer 20 is located on the side of the passivation layer 40 away from the substrate 10.

[0050] In this way, the passivation layer 40 is also protected by the ultraviolet isolation layer 20, and the ultraviolet light is difficult to reach the passivation layer 40 due to the cutoff of the ultraviolet isolation layer 20, so as to reduce the influence of the ultraviolet light on the passivation layer 40, alleviate the hot carrier effect, and inhibit the ultraviolet light from damaging the passivation layer 40 to increase the interface state density.

[0051] In some embodiments, the ultraviolet shielding layer 20 is configured to be doped with a fluorescent material. The fluorescent material is capable of absorbing ultraviolet rays and emitting visible light when excited by the ultraviolet rays.

[0052] The fluorescent material can be, but is not limited to, an organic dye, a quantum dot, a rare earth fluorescent powder, etc., as long as it can absorb ultraviolet rays and convert them into visible light emission.

[0053] In this way, after being absorbed by the ultraviolet shielding layer 20, the ultraviolet rays can also excite the fluorescent material, which is then utilized by the solar cell 100 in the form of visible light. In addition to alleviating the UVID problem, the utilization rate of light by the solar cell 100 is also improved, which helps to improve the efficiency of the solar cell 100.

[0054] In some embodiments, the substrate 10 has a first side and a second side arranged opposite to each other. The ultraviolet shielding layer 20 includes a first ultraviolet shielding layer 21 and a second ultraviolet shielding layer 23, the first ultraviolet shielding layer 21 is arranged on the first side, and the second ultraviolet shielding layer 23 is arranged on the second side. The antireflection film 30 includes a first antireflection film 31 and a second antireflection film 33, the first antireflection film 31 is arranged on a side of the first ultraviolet shielding layer 21 away from the substrate 10, and the second antireflection film 33 is arranged on a side of the second ultraviolet shielding layer 23 away from the substrate 10.

[0055] It can be understood that one of the first side and the second side corresponds to the front surface of the solar cell 100, and the other corresponds to the back surface of the solar cell 100. Specifically, the first side corresponds to the front surface of the solar cell 100, and the second side corresponds to the back surface of the solar cell 100.

[0056] In this way, the ultraviolet shielding layer 20 and the antireflection film 30 are arranged on both sides of the substrate 10, which can more fully reduce the influence of ultraviolet rays.

[0057] Further, the passivation layer 40 includes a first passivation layer 41 and a second passivation layer 43. The first passivation layer 41 is arranged between the first ultraviolet shielding layer 21 and the first side of the substrate 10. The second passivation layer 43 is arranged between the second ultraviolet shielding layer 23 and the second side of the substrate 10.

[0058] In this way, the first ultraviolet shielding layer 21 and the second ultraviolet shielding layer 23 arranged on both sides of the substrate 10 are respectively located on a side of the passivation layer 40 away from the substrate 10, which can absorb the ultraviolet rays before they reach the first passivation layer 41 and the second passivation layer 43, thereby reducing the influence of the ultraviolet rays on the two layers.

[0059] In some embodiments, the first passivation layer 41 includes an aluminum oxide layer.

[0060] The aluminum oxide layer has excellent chemical passivation ability and field effect passivation ability, and cooperates with the protection of the ultraviolet isolation layer 20, so that the aluminum oxide layer can fully exert its advantages and improve the efficiency of the solar cell 100.

[0061] In some embodiments, the second passivation layer 43 includes a tunnel layer 431 and a doped semiconductor layer 433, the tunnel layer 431 is arranged on the second side, and the doped semiconductor layer 433 is arranged on the side of the tunnel layer 431 away from the substrate 10.

[0062] The tunnel layer 431 is a super-thin tunnel oxide layer, and the doped semiconductor layer 433 is a doped polysilicon layer and is used to contact the electrode 50. Accordingly, the solar cell 100 is a TOPcon (Tunnel Oxide Passivated Contact) cell.

[0063] In this way, the combination of the tunnel layer 431 and the doped semiconductor layer 433 enables the solar cell 100 to have high efficiency. At the same time, the ultraviolet isolation layer 20 plays a role in protecting the tunnel layer 431 and the doped semiconductor layer 433 from ultraviolet light, so that they can fully exert their advantages and improve the stability of the efficiency of the solar cell 100.

[0064] In other embodiments, the solar cell 100 can also be a BC-type cell, and the like, which is not limited here.

[0065] In some embodiments, the solar cell 100 further includes an emitter 60, which can be formed on the first side of the substrate 10. Specifically, the substrate 10 is an N-type silicon wafer, and accordingly, the emitter 60 is a P-type emitter 60.

[0066] In some embodiments, the solar cell 100 further includes a positive electrode and a negative electrode. The positive electrode is arranged on the front surface of the solar cell 100 and contacts the emitter 60. The negative electrode is arranged on the back surface of the solar cell 100 and contacts the doped semiconductor layer 433.

[0067] The above solar cell 100, the substrate 10 is an N-type silicon wafer, the first side has a P-type emitter 60, and the first side has a first passivation layer 41, a first ultraviolet isolation layer 21, and a first antireflection film 31 from inside to outside, and a positive electrode is arranged accordingly. The second side of the substrate 10 has a tunnel layer 431, a doped semiconductor layer 433, a second ultraviolet isolation layer 23, and a second antireflection film 33 from inside to outside, and a negative electrode is arranged accordingly. The first passivation layer 41 is made of aluminum oxide, and the antireflection film 30 is made of silicon nitride.

[0068] Therefore, the ultraviolet isolation layer 20 as a part of the solar cell 100 can cut off the ultraviolet light entering the solar cell 100 through the anti-reflective film 30, so that the ultraviolet light is difficult to continue to transmit inward. The ultraviolet isolation layer 20 and the anti-reflective film 30 are arranged on both sides of the solar cell 100, and the passivation layer 40 is arranged between the ultraviolet isolation layer 20 and the substrate 10. Under the isolation protection of the ultraviolet isolation layer 20, the probability of the ultraviolet light destroying the silicon-hydrogen bond and causing the hydrogen-induced dangling bond is reduced, and the UVID problem of the solar cell 100 is effectively alleviated. The ultraviolet isolation layer 20 is also doped with a fluorescent material, which can absorb ultraviolet light and emit visible light under ultraviolet excitation, so as to improve the light utilization rate of the solar cell 100. As a part of the solar cell 100, the ultraviolet isolation layer 20 can be manufactured by using the deposition equipment for producing the solar cell 100, and the thickness is more accurate and the film quality is higher. In addition, compared with the mode that the ultraviolet isolation layer 20 is arranged outside the anti-reflective film 30, the mode that the ultraviolet isolation layer 20 is arranged inside the anti-reflective film 30 can make the light pass through the anti-reflective effect of the anti-reflective film 30 first, so that more photons enter the cell inside, and then the ultraviolet isolation layer 20 absorbs the ultraviolet light accordingly. At the same time, the ultraviolet isolation layer 20 can also be protected by the anti-reflective film 30 to resist environmental erosion.

[0069] The application also provides a photovoltaic module, which comprises a plurality of solar cells 100 connected in series and / or in parallel, and at least one solar cell 100 is the above-mentioned solar cell 100.

[0070] The application also provides a photovoltaic system, which comprises the above-mentioned solar cell or the above-mentioned photovoltaic module.

[0071] Please refer to Figure 2 The application also provides a manufacturing method of a solar cell, which can be used to prepare the above-mentioned solar cell, and comprises the following steps:

[0072] S200, providing a substrate.

[0073] It can be understood that the substrate is a silicon wafer, and specifically can be an N-type silicon wafer or a P-type silicon wafer. In an embodiment, the substrate is an N-type silicon wafer.

[0074] S400, forming an ultraviolet isolation layer on at least one side of the substrate.

[0075] Specifically, the absorption edge of the material of the ultraviolet isolation layer can be 200 nm-415 nm, which can sufficiently cover the ultraviolet light in the wavelength range of 280 nm-400 nm, and effectively absorb and isolate the ultraviolet light. The material of the ultraviolet isolation layer can comprise at least one of gallium nitride, zinc oxide, titanium dioxide, aluminum nitride and magnesium fluoride, and can be doped with a fluorescent material, so as to absorb ultraviolet light and emit visible light.

[0076] The ultraviolet barrier layer can be deposited on at least one side of the substrate, and specifically on at least the side of the substrate corresponding to the front side of the solar cell. The deposition method can be, but is not limited to, PECVD, ALD, etc.

[0077] S600, an anti-reflection film is formed on the side of the ultraviolet shielding layer that is away from the substrate.

[0078] Antireflective coatings can also be formed by deposition, and the material of the antireflective coating can be, but is not limited to, silicon nitride.

[0079] The aforementioned method for manufacturing solar cells includes an ultraviolet (UV) blocking layer inside the antireflective coating. As part of the solar cell, this UV blocking layer blocks UV rays that have penetrated the antireflective coating and entered the solar cell, preventing them from continuing to propagate inward. Thus, under the protection of the UV blocking layer, the probability of UV rays damaging silicon-hydrogen bonds and causing hydrogen dangling bonds is reduced, effectively mitigating the UVID problem of the solar cell. As part of the solar cell, the UV blocking layer can be manufactured using deposition equipment used in solar cell production, resulting in more precise thickness and higher film quality.

[0080] Furthermore, compared to placing the UV blocking layer on the outside of the antireflective coating, placing it on the inside allows light to pass through the antireflective coating first, enabling more photons to enter the battery, where the UV blocking layer then absorbs the UV light accordingly. Simultaneously, the UV blocking layer is also protected by the antireflective coating to resist environmental corrosion.

[0081] In some embodiments, the step of forming an ultraviolet blocking layer on at least one side of the substrate specifically includes:

[0082] A passivation layer is formed on the substrate;

[0083] An ultraviolet barrier layer is formed on the side of the passivation layer that faces away from the substrate.

[0084] Understandably, the passivation layer, the ultraviolet blocking layer, and the antireflection film are deposited sequentially on the substrate, with the passivation layer located between the ultraviolet blocking layer and the substrate, and the ultraviolet blocking layer located between the passivation layer and the antireflection film.

[0085] Thus, the passivation layer is also protected by the ultraviolet barrier layer. Ultraviolet rays are blocked by the ultraviolet barrier layer and have difficulty reaching the passivation layer, thereby reducing the impact of ultraviolet rays on the passivation layer, mitigating the hot carrier effect, and inhibiting ultraviolet rays from damaging the passivation layer and increasing the interface state density.

[0086] In some embodiments, the step of forming a passivation layer on the substrate specifically includes:

[0087] A first passivation layer is formed on a first side of the substrate, and a second passivation layer is formed on a second side of the substrate.

[0088] The step of forming an ultraviolet barrier layer on at least one side of the substrate specifically includes:

[0089] A first ultraviolet barrier layer is formed on the side of the first passivation layer away from the substrate, and a second ultraviolet barrier layer is formed on the side of the second passivation layer away from the substrate.

[0090] Understandably, the substrate has a first side and a second side disposed opposite to each other, one of which corresponds to the front side of the solar cell and the other to the back side of the solar cell. Specifically, the first side corresponds to the front side of the solar cell and the second side corresponds to the back side of the solar cell. The first passivation layer may be, but is not limited to, an aluminum oxide layer.

[0091] Thus, with UV blocking layers and antireflective films on both sides of the substrate, the impact of ultraviolet radiation can be reduced more effectively. The first and second UV blocking layers, located on opposite sides of the substrate, are situated on the side of the passivation layer away from the substrate, allowing them to absorb ultraviolet radiation before it reaches the first and second passivation layers, thereby reducing the impact of ultraviolet radiation on both.

[0092] Specifically, the step of forming a second passivation layer on the second side of the substrate includes:

[0093] A tunneling layer and a doped semiconductor layer are sequentially formed on the second side of the substrate to obtain a second passivation layer.

[0094] The doped semiconductor layer is a doped polycrystalline silicon layer, which is used to contact the electrodes. Accordingly, the solar cell is a TOPcon cell.

[0095] Thus, the combination of the tunneling layer and the doped semiconductor layer gives solar cells the advantage of high efficiency. At the same time, the ultraviolet blocking layer provides ultraviolet protection for both the tunneling layer and the doped semiconductor layer, allowing them to fully realize their advantages and improving the stability of solar cell efficiency.

[0096] In other embodiments, the solar cell may also be a BC-type cell, etc., which are not specifically limited here.

[0097] In some embodiments, prior to the step of forming a passivation layer on the substrate, the method further includes: diffusing to form an emitter on a first side of the substrate.

[0098] In some embodiments, after the step of forming an antireflective film on the side of the ultraviolet blocking layer opposite to the substrate, the method further includes:

[0099] Electrodes are formed by screen printing on the antireflective film.

[0100] Understandably, the electrodes include a positive electrode and a negative electrode. The positive electrode is located on the front side of the solar cell and is in contact with the emitter. The negative electrode is located on the back side of the solar cell and is in contact with the doped semiconductor layer.

[0101] To facilitate understanding of the manufacturing method of the solar cell of this application, a specific application example is provided below. In this specific application example, the manufacturing method of the solar cell of this application includes the following steps:

[0102] 1. Texturing the silicon wafer to form a pyramidal textured surface;

[0103] 2. The texturized silicon wafer is subjected to a boron diffusion process to form a PN junction, thus obtaining a substrate;

[0104] 3. Clean the substrate, perform secondary texturing on the back side, and then deposit an ultrathin tunneling oxide layer and an amorphous silicon layer;

[0105] 4. After phosphorus diffusion, the amorphous silicon layer on the back side is doped and crystallized to form a second passivation layer, and then polished and cleaned using RCA.

[0106] 5. Perform ALD process on the substrate to deposit an aluminum oxide passivation film, forming the first passivation layer;

[0107] 6. Prepare ultraviolet-shielding layers on the front and back of the battery;

[0108] 7. Deposit antireflective coatings on the front and back sides using PECVD process;

[0109] 8. Screen printing is used to form electrodes, completing the preparation of the battery cell.

[0110] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0111] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. A solar cell, characterized in that, include: Substrate (10); An ultraviolet blocking layer (20) is disposed on at least one side of the substrate (10); as well as An antireflective film (30) is disposed on the side of the ultraviolet blocking layer (20) away from the substrate (10).

2. The solar cell according to claim 1, characterized in that, The solar cell further includes a passivation layer (40) disposed between the ultraviolet barrier layer (20) and the substrate (10).

3. The solar cell according to claim 1, characterized in that, The absorption edge of the material of the ultraviolet barrier layer (20) is 200nm-415nm.

4. The solar cell according to claim 1, characterized in that, The material of the ultraviolet barrier layer (20) includes at least one of gallium nitride, zinc oxide, titanium dioxide, aluminum nitride, and magnesium fluoride.

5. The solar cell according to claim 1, characterized in that, The ultraviolet barrier layer (20) is configured to be doped with a fluorescent material; the fluorescent material is capable of absorbing ultraviolet light and emitting visible light when excited by ultraviolet light.

6. The solar cell according to any one of claims 1-5, characterized in that, The substrate (10) has a first side and a second side disposed opposite to each other; The ultraviolet barrier layer (20) includes a first ultraviolet barrier layer (21) and a second ultraviolet barrier layer (23), wherein the first ultraviolet barrier layer (21) is disposed on the first side and the second ultraviolet barrier layer (23) is disposed on the second side; The antireflective film (30) includes a first antireflective film (31) and a second antireflective film (33). The first antireflective film (31) is disposed on the side of the first ultraviolet blocking layer (21) away from the substrate (10), and the second antireflective film (33) is disposed on the side of the second ultraviolet blocking layer (23) away from the substrate (10).

7. The solar cell according to claim 6, characterized in that, The solar cell further includes a passivation layer (40), which includes a first passivation layer (41) and a second passivation layer (43). The first passivation layer (41) is disposed between the first ultraviolet barrier layer (21) and the first side of the substrate (10); the second passivation layer (43) is disposed between the second ultraviolet barrier layer (23) and the second side of the substrate (10).

8. The solar cell according to claim 7, characterized in that, The first passivation layer (41) includes an aluminum oxide layer; And / or, the second passivation layer (43) includes a tunneling layer (431) and a doped semiconductor layer (433), the tunneling layer (431) being disposed on the second side, and the doped semiconductor layer (433) being disposed on the side of the tunneling layer (431) facing away from the substrate (10).

9. A photovoltaic module, characterized in that, It includes multiple solar cells connected in series and / or in parallel, and at least one of the solar cells is a solar cell as described in any one of claims 1-8.

10. A method for manufacturing a solar cell, characterized in that, Includes the following steps: Provide substrate; An ultraviolet-shielding layer is formed on at least one side of the substrate; An antireflective film is formed on the side of the ultraviolet blocking layer that is away from the substrate.

11. The method for manufacturing a solar cell according to claim 10, characterized in that, The step of forming an ultraviolet blocking layer on at least one side of the substrate specifically includes: A passivation layer is formed on the substrate; The ultraviolet barrier layer is formed on the side of the passivation layer opposite to the substrate.

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