Self-adaptive damping quartz crystal resonator and manufacturing method thereof

Abstract

The invention relates to a self-adaptive damping quartz crystal resonator and a manufacturing method thereof.The self-adaptive damping quartz crystal resonator comprises a base, an upper cover and a quartz wafer, an inner groove is formed in the upper end of the base, an upper end opening of the inner groove is sealed through the upper cover, two internal electrodes are arranged on one side of the bottom of the inner groove side by side, and the two internal electrodes are arranged in parallel; the upper ends of the two internal electrodes are connected with a quartz wafer through a conductive silver adhesive, a support table is arranged on one side of each internal electrode, the upper end face of each support table is bonded with the quartz wafer through a damping adhesive, and the internal electrodes and the support tables are integrally formed by adopting a nickel-titanium memory alloy. And an external electrode correspondingly connected with the internal electrode is arranged at the bottom of the base. Through the superposition design of memory alloy supporting and damping buffering, the bottleneck in the prior art is broken through, and leap-type improvement of the stability and reliability of the resonator is achieved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of quartz crystal resonator, in particular to a self-adaptive damping quartz crystal resonator and a manufacturing method. BACKGROUND

[0002] As the core frequency reference element of electronic equipment, the performance of quartz crystal resonator directly determines the working accuracy of the equipment. With the development of 5G communication, automatic driving and other technologies, the requirements for resonators have been upgraded from traditional "low drift" to "high stability under wide temperature, strong vibration and high frequency".

[0003] The existing quartz crystal resonator has the following core bottlenecks: 1. The internal electrodes of traditional resonators are mostly made of ordinary metal materials such as copper and silver, and the thermal expansion coefficient is quite different from that of quartz wafer. The thermal stress generated when the temperature changes (-55-125℃) will cause the frequency drift to increase significantly, and the temperature stability is poor, which cannot meet the high-precision requirements of vehicle-mounted and aerospace equipment; 2. The anti-vibration and anti-interference performance of traditional resonators is generally poor; 3. The packaging of traditional resonators mostly uses single glue sealing or metal compression sealing, and external water vapor and impurities are easy to enter the internal electrode, causing electrode oxidation, and the electromagnetic shielding performance and heat dissipation performance of existing resonators also have a lot of room for improvement. SUMMARY

[0004] The technical problem to be solved by the present application is to provide a self-adaptive damping quartz crystal resonator and a manufacturing method, which breaks through the bottleneck of the prior art by using memory alloy support and damping buffer superposition design, and realizes a leap-forward improvement in the stability and reliability of the resonator.

[0005] The technical solution adopted by the present application to solve the technical problem is to provide a self-adaptive damping quartz crystal resonator and a manufacturing method, comprising a base, an upper cover and a quartz wafer, the base is provided with an inner groove at the upper end, and the inner groove is sealed by the upper cover at the upper end, two internal electrodes are arranged side by side at the bottom of the inner groove, the quartz wafer is connected to the upper end of the two internal electrodes through conductive silver glue, a support is arranged on one side of the internal electrode for auxiliary supporting the quartz wafer, the upper end surface of the support and the quartz wafer are adhered by damping glue, the internal electrode and the support are integrally formed by nickel-titanium memory alloy, and the base is provided with an external electrode corresponding to the internal electrode at the bottom.

[0006] As a supplement to the technical solution of the present application, a necking is arranged at the inner wall of the opening of the base, the caliber of the necking gradually decreases from top to bottom, a boss is arranged at the lower end of the upper cover and inserted into the necking, the boss and the inner wall of the necking are sealed by an adhesive, and the upper end surface of the base and the outer side wall of the upper cover are sealed by gold-tin alloy welding.

[0007] As a supplement to the technical scheme of the application, the inner wall of the inner groove and the lower end face of the upper cover are provided with a shielding layer, which is covered on the inner wall of the inner groove and the lower end face of the upper cover by sputtering process.

[0008] As a supplement to the technical scheme of the application, the inner wall of the inner groove and the lower end face of the upper cover are provided with a shielding layer, which is covered on the inner wall of the inner groove and the lower end face of the upper cover by sputtering process.

[0009] As a supplement to the technical scheme of the application, the inner wall of the inner groove and the lower end face of the upper cover are provided with a shielding layer, which is covered on the inner wall of the inner groove and the lower end face of the upper cover by sputtering process.

[0010] As a supplement to the technical scheme of the application, the inner wall of the inner groove and the lower end face of the upper cover are provided with a shielding layer, which is covered on the inner wall of the inner groove and the lower end face of the upper cover by sputtering process.

[0011] As a supplement to the technical scheme of the application, the inner wall of the inner groove and the lower end face of the upper cover are provided with a shielding layer, which is covered on the inner wall of the inner groove and the lower end face of the upper cover by sputtering process.

[0012] As a supplement to the technical scheme of the application, the inner wall of the inner groove and the lower end face of the upper cover are provided with a shielding layer, which is covered on the inner wall of the inner groove and the lower end face of the upper cover by sputtering process.

[0013] The application further provides a manufacturing method of the self-adaptive damping quartz crystal resonator, comprising the following steps: S1: cleaning, placing the quartz plate into a quartz fixture, the quartz fixture is provided with a positioning clamping groove to ensure that the quartz plate is placed in order, and a solution is used to remove impurities on the surface of the quartz plate arranged in the quartz fixture, so as to ensure the adhesion of the metal film in the subsequent sputtering process; S2: sputtering, sputtering is to collide the surface of the metal target with high-energy particles, the atoms on the surface of the metal exchange momentum with these high-energy particles, and the atoms on the surface of the metal are ejected and converted to the surface of the quartz crystal plate by the action of the electric field to form a metal film, the metal film includes an electrode surface, an electrode foot and an electrode lead; S3: fixing, using a dispensing machine to apply damping glue on the wave-shaped upper end surface of the support, the thickness of the glue layer is 0.03-0.05mm, conductive silver glue is injected into the dispensing groove, and the quartz crystal wafer plated with a metal film is carried on the two internal electrodes of the base through the conductive silver glue, the electrode foot is in contact with the conductive silver glue, and the upper end surface of the support is fixed between the quartz crystal wafer through the damping glue; S4: baking glue, baking glue is a way of heating using a tunnel furnace, the base with the quartz crystal wafer carried is put into the tunnel furnace for segmented baking: the first stage is to rise from room temperature to 120℃ at a rate of 5℃ / min, and keep the temperature for 30min to remove the solvent in the glue layer; the second stage is to rise from 120℃ to 180℃ at a rate of 3℃ / min, and keep the temperature for 60min to realize the preliminary curing of the glue layer; the third stage is to rise from 180℃ to 200℃ at a rate of 2℃ / min, and keep the temperature for 40min to ensure that the glue layer is completely cured; the cooling stage adopts natural cooling to avoid thermal stress caused by sudden cooling, and finally the quartz crystal wafer is fixed on the internal electrodes of the base and the support through the curing of the conductive silver glue and the damping glue; S5: fine tuning, fine tuning is a way of dry etching, ion beam bombards the surface of the quartz crystal metal film, and the frequency of the quartz crystal vibration body is adjusted to the target range by reducing the surface metal atoms; S6: sealing, adhesive is applied on the outer sidewall of the boss and the inner sidewall of the neck, then the boss at the lower end of the upper cover is inserted into the neck for bonding and sealing to realize preliminary sealing, and then the outer sidewall of the upper cover is welded and sealed between the upper end surface of the base and the outer sidewall of the upper cover to realize final sealing.

[0014] Beneficial effects: the present application relates to a self-adaptive damping quartz crystal resonator and manufacturing method, the thermal expansion coefficient of nickel titanium memory alloy is matched with the quartz wafer, the temperature stability of AT type quartz crystal plate is combined, the frequency drift amount can be effectively reduced in a wide temperature range, the demand of wide temperature scene such as vehicle-mounted and aerospace is met, and the nickel titanium memory alloy has unique shape memory function, can automatically restore to the original state in a fixed temperature range, and can stabilize the quartz wafer in a suitable position; the buffer structure of the wave type support and the polyimide damping glue is matched with the anti-interference design of the partition through hole, the anti-vibration interference ability is significantly enhanced; the double sealing structure is adopted between the base and the upper cover, the air leakage rate is greatly reduced, and the inner wall of the base and the lower end surface of the upper cover are provided with shielding layers; the shielding layer can attenuate interference and reduce high-frequency signal transmission distortion rate; the polyimide damping glue has heat conductivity, which is matched with the heat conduction path of the internal electrode of the memory alloy and the base, so as to reduce the working temperature of the quartz wafer and avoid the frequency drift caused by high temperature; the upper end of the conductive column penetrates the bottom surface of the dispensing groove, the external electrode is communicated with the quartz wafer through the conductive column and the conductive silver glue, and the external electrode can also be communicated with the quartz wafer through the conductive column, the internal electrode and the conductive silver glue; the penetration design of the conductive column can reduce the requirement for the conductive performance of the internal electrode, so as to improve other performances of the internal electrode; the traditional conductive column does not penetrate the internal electrode, but is arranged between the internal electrode and the external electrode for connection of the two; through the processes of dispensing groove positioning, segmented glue baking and double sealing, the frequency deviation qualified rate is improved, the production efficiency is improved, and the manufacturing cost is reduced. BRIEF DESCRIPTION OF DRAWINGS

[0015] Figure 1 is a structural schematic diagram of the present application; Figure 2 is a partial enlarged view of A in the present application Figure 1 Figure 3 is a top view of the present application after removing the upper cover.

[0016] Fig. 1, base, 2, upper cover, 3, quartz wafer, 4, inner groove, 5, internal electrode, 6, support, 7, damping glue, 8, dispensing groove, 9, external electrode, 10, necking, 11, boss, 12, gold-tin alloy, 13, conductive silver glue, 14, conductive column, 15, quartz crystal plate, 16, semicircular plate, 17, electrode surface, 18, electrode leg, 19, electrode lead, 20, partition through hole, 21, corner part. DETAILED DESCRIPTION

[0017] ​The application will be further described in connection with the following specific embodiments. It should be understood that these embodiments are only used to illustrate the application and not used to limit the scope of the application. Furthermore, it should be understood that those skilled in the art can make various modifications or changes to the application after reading the content of the application, and these equivalent forms also fall within the scope defined by the appended claims.

[0018] Embodiments of the application relate to a self-adaptive damping quartz crystal resonator and a manufacturing method. Figures 1-3 As shown in the figure, the quartz crystal resonator comprises a base 1, an upper cover 2 and a quartz wafer 3, the base 1 is provided with an inner groove 4 at the upper end, the upper end of the inner groove 4 is closed by the upper cover 2, two internal electrodes 5 are arranged side by side at the bottom of the inner groove 4, the quartz wafer 3 is connected to the upper end of the two internal electrodes 5 through conductive silver paste 13, a support 6 for auxiliary supporting the quartz wafer 3 is arranged at one side of the internal electrode 5, the upper end surface of the support 6 is bonded to the quartz wafer 3 through damping glue 7, the internal electrode 5 and the support 6 are integrally formed by using nickel-titanium memory alloy, and the base 1 is provided with external electrodes 9 corresponding to the internal electrodes 5.

[0019] The internal electrode 5 and the support 6 of the application are integrally formed by using nickel-titanium memory alloy, the phase transition temperature range of the nickel-titanium memory alloy is 35-50℃, the elastic modulus fluctuation is ≤5% in the range of -55-125℃, the thermal stress is effectively buffered, the nickel-titanium memory alloy can automatically restore to the original state in a fixed temperature range, and the quartz wafer 3 can be stably positioned at a suitable position; the quartz wafer 3 is connected to the upper end of the internal electrode 5 through the conductive silver paste 13, the upper end surface of the support 6 is bonded to the quartz wafer 3 through the damping glue 7, and the buffering structure of the support 6 and the damping glue 7 significantly enhances the anti-vibration interference capability of the quartz wafer 3.

[0020] Titanium-nickel alloy is called memory alloy, which is a functional material with unique shape memory function, wear resistance, corrosion resistance, super elasticity and other characteristics, and is mainly used in the fields of aviation, aerospace, medical treatment and the like.

[0021] As an illustration of the sealing optimization scheme of the base 1 and the upper cover 2, the inner wall of the opening at the upper end of the base 1 is provided with a necked portion 10, the caliber of the necked portion 10 gradually decreases from top to bottom, the lower end of the upper cover 2 is provided with a boss 11 inserted into the necked portion 10, the boss 11 and the inner wall of the necked portion 10 are sealed by using adhesive, and the upper end surface of the base 1 and the outer side wall of the upper cover 2 are welded and sealed by using gold-tin alloy 12.

[0022] As a preferred solution to enhance the shielding performance of the quartz crystal resonator, the inner wall of the inner groove 4 and the lower end surface of the upper cover 2 are provided with a shielding layer, which is covered on the inner wall of the inner groove 4 and the lower end surface of the upper cover 2 by sputtering process, and the shielding layer can attenuate the external electromagnetic interference in the 20GHz frequency band to ≤0.1%, ensuring the signal-to-noise ratio of high-frequency signal transmission ≥60dB, effectively avoiding the frequency jitter caused by electromagnetic interference.

[0023] The inner electrode 5 is provided with a dispensing groove 8 for accommodating conductive silver glue 13, which is a circular groove or a hemispherical groove. The dispensing groove 8 is provided to accommodate the conductive silver glue 13 to prevent overflow of the glue. A through hole is provided between the dispensing groove 8 and the outer electrode 9 inside the base 1, which is filled with conductive material to form a conductive column 14. The upper end of the conductive column 14 penetrates the bottom surface of the dispensing groove 8. The outer electrode 9 is in communication with the quartz wafer 3 through the conductive column 14 and the conductive silver glue 13, or the outer electrode 9 is in communication with the quartz wafer 3 through the conductive column 14, the inner electrode 5 and the conductive silver glue 13. The penetration design of the conductive column 14 can reduce the requirement for the conductive performance of the inner electrode 5, so as to improve other performances of the inner electrode 5. The traditional conductive column 14 does not penetrate the inner electrode 5, but is arranged between the inner electrode 5 and the outer electrode 9 for connection of the two.

[0024] As a preferred solution of the support 6, referring to Figure 1 and Figure 2 , the upper end surface of the support 6 is in a wave shape, which increases the contact area with the damping glue 7 and improves the bonding stability. As a preferred solution of the damping glue 7, the damping glue 7 is selected from polyimide damping glue, which has flexibility and thermal conductivity, further buffers vibration impact (vibration transmission rate ≤5%), and transmits heat of the quartz wafer 3 to the inner electrode 5, solving the heat dissipation short board of the suspended installation of the quartz wafer 3. The wave-shaped support 6 and the quartz wafer 3 are bonded by the damping glue 7, which can reduce the external vibration transmission rate from 20% of the traditional structure to ≤5%, and at the same time, the heat generated by the work of the quartz wafer 3 is transmitted to the nickel-titanium memory alloy, and then is conducted out by the base 1, so that the work temperature of the wafer is reduced, and the frequency drift caused by high temperature is avoided.

[0025] As a preferred solution of the quartz wafer 3, a downward corner portion 21 is arranged at the connection between the quartz wafer 3 and the conductive silver glue 13, which is buckled with the support 6. The corner portion 21 not only shortens the distance between the quartz wafer 3 and the inner electrode 5, but also reduces the use amount of the conductive silver glue 13. Moreover, the corner portion 21 is buckled with the support 6 to play a positioning role, which ensures the installation accuracy and increases the contact surface between the conductive silver glue 13 and the quartz wafer 3.

[0026] As the structure of the quartz wafer 3, the quartz wafer 3 comprises a quartz wafer plate 15, an electrode surface 17 and an electrode lead 19, the quartz wafer plate 15 is provided with the electrode surface 17 on the upper surface and the lower surface, the overlapping part of the electrode surface 17 formed on the upper surface or the lower surface of the quartz wafer plate 15 is a main vibration area, the main vibration area is the core area of the frequency output, the side edge of the quartz wafer plate 15 is provided with an electrode foot 18 corresponding to the internal electrode 5, the electrode foot 18 and the corresponding electrode surface 17 are connected by the electrode lead 19, and the electrode lead 19 is arranged in an inclined manner to avoid stress concentration caused by a straight line structure.

[0027] As the preferred solution of the quartz wafer 3, the quartz wafer plate 15 is in a rectangular plate structure, the free end of the quartz wafer plate 15 is provided with a semicircular plate 16, the electrode surface 17 is a circular surface, the electrode surface 17 is arranged concentrically with the semicircular plate 16, a plurality of arc-shaped partition through holes 20 are arranged on the quartz wafer plate 15 on the side of the electrode surface 17 close to the electrode foot 18, and the plurality of partition through holes 20 are arranged around the electrode surface 17; the partition through hole 20 can block the transmission of vibration from the electrode foot 18 to the main vibration area, reduce the frequency fluctuation caused by external force interference, and improve the frequency stability in the vibration environment.

[0028] The quartz wafer plate 15 is selected to be an AT cut type.

[0029] A manufacturing method of a self-adaptive damping quartz crystal resonator comprises the following steps: S1: cleaning, the quartz wafer plate 15 is placed in a quartz fixture, the quartz fixture is provided with a positioning clamping groove to ensure that the quartz wafer plate 15 is placed in order, and a solution is used to remove impurities arranged on the surface of the quartz wafer plate 15 in the quartz fixture to ensure the adhesion of the metal film in the subsequent sputtering process; S2: sputtering, sputtering is to collide the surface of a metal target with high-energy particles, atoms on the surface of the metal exchange momentum with the high-energy particles, and are bounced off and converted to the surface of the quartz wafer plate 15 to form a metal film through the action of an electric field, the metal film comprises the electrode surface 17, the electrode foot 18 and the electrode lead 19; S3: fixing, a dispensing machine is used to smear damping glue 7 on the wavy upper end surface of the support 6, the thickness of the glue layer is 0.03-0.05mm, conductive silver glue 13 is injected into the dispensing groove 8, the quartz wafer 3 plated with the metal film is carried on the two internal electrodes 5 of the base 1 through the conductive silver glue 13, the electrode foot 18 is in contact with the conductive silver glue 13, and the upper end surface of the support 6 and the quartz wafer 3 are bonded and fixed through the damping glue 7; S4: baking, baking is to put the base 1 carrying the quartz crystal wafer 3 into a tunnel furnace to carry out segmented baking: the first stage is to rise from room temperature to 120 DEG C at a rate of 5 DEG C / min, keep warm for 30 min to remove the solvent in the glue layer; the second stage is to rise from 120 DEG C to 180 DEG C at a rate of 3 DEG C / min, keep warm for 60 min to realize the preliminary curing of the glue layer; the third stage is to rise from 180 DEG C to 200 DEG C at a rate of 2 DEG C / min, keep warm for 40 min to ensure that the glue layer is completely cured; the cooling stage adopts natural cooling to avoid thermal stress caused by sudden cooling, and finally the quartz crystal wafer 3 is fixed on the inner electrode 5 and the support 6 of the base 1 through the curing of the conductive silver glue 13 and the damping glue 7; S5: fine tuning: fine tuning is to use dry etching, ion beam bombards the surface of the quartz crystal metal film, and the frequency of the quartz crystal vibration body is adjusted to the target range by reducing the surface metal atoms; S6: sealing, the adhesive is coated on the outer side wall of the boss 11 and the inner side wall of the neck 10, then the boss 11 at the lower end of the upper cover 2 is inserted into the neck 10 for bonding and sealing, to realize preliminary sealing, then the upper end surface of the base 1 and the outer side wall of the upper cover 2 are welded and sealed by gold-tin alloy 12 to realize final sealing.

[0030] In the description of the present application, it should be understood that the orientation words such as "front, back, up, down, left, right", "transverse, vertical, perpendicular, horizontal" and "top, bottom" and the like indicate the orientation or position relationship shown in the drawings, which is only for the convenience of describing the present application and simplifying the description, and does not indicate and imply that the indicated device or element must have a specific orientation or be constructed and operated in a specific orientation, therefore it cannot be understood as a limitation on the protection scope of the present application; the orientation words "inner, outer" refer to the inner and outer of the contour of each component itself.

[0031] For purposes of the description hereinafter, spatial

[0032] In addition, it should be noted that the use of "first", "second", etc. words to define parts, only for the convenience of the corresponding parts, such as no other declaration, the above words have no special meaning, therefore can not be understood as the limitation of the scope of protection of the present application.

[0033] The above provides a self-adaptive damping quartz crystal resonator and a manufacturing method, which are described in detail in the present application. The principles and implementation methods of the present application are described in the above examples. The above example is only used to help understand the method and its core idea. Meanwhile, for those skilled in the art, according to the idea of the present application, the specific implementation and application range will be changed. In summary, the content of the specification should not be understood as a limitation of the present application.

Claims

1. A self-adapting damped quartz crystal resonator comprising a base (1), an upper cover (2) and a quartz wafer (3), characterized in that: The base (1) is provided with an inner groove (4) at the upper end, and the upper end of the inner groove (4) is closed by the upper cover (2); two internal electrodes (5) are arranged side by side at the bottom of the inner groove (4); a quartz crystal wafer (3) is connected to the upper end of the two internal electrodes (5) by conductive silver glue (13); a support (6) for assisting in supporting the quartz crystal wafer (3) is arranged at one side of the internal electrode (5); the upper end surface of the support (6) is bonded to the quartz crystal wafer (3) by damping glue (7); the internal electrode (5) and the support (6) are integrally formed by nickel-titanium memory alloy; and the base (1) is provided with an external electrode (9) corresponding to the internal electrode (5).

2. The self-adapting damped quartz crystal resonator of claim 1, wherein: The inner wall of the opening at the upper end of the base (1) is provided with a necking (10), and the caliber of the necking (10) gradually decreases from top to bottom; the lower end of the upper cover (2) is provided with a boss (11) inserted into the necking (10), and the boss (11) and the inner wall of the necking (10) are sealed by an adhesive; and the upper end surface of the base (1) and the outer side wall of the upper cover (2) are welded and sealed by gold-tin alloy (12).

3. The self-adapting damped quartz crystal resonator of claim 1, wherein: The inner wall of the inner groove (4) and the lower end surface of the upper cover (2) are both provided with a shielding layer, which is covered on the inner wall of the inner groove (4) and the lower end surface of the upper cover (2) by a sputtering process.

4. The self-adapting damped quartz crystal resonator of claim 1, wherein: The internal electrode (5) is provided with a dispensing groove (8) for accommodating the conductive silver glue (13); a through hole is arranged between the dispensing groove (8) and the external electrode (9) in the interior of the base (1), the through hole is filled with a conductive material to form a conductive column (14), and the upper end of the conductive column (14) penetrates the bottom surface of the dispensing groove (8).

5. The self-adapting damped quartz crystal resonator of claim 4, wherein: The dispensing groove (8) is a circular groove or a hemispherical groove.

6. The self-damped quartz crystal resonator of claim 1, wherein: The upper end surface of the support (6) is in a wave shape, and the damping glue (7) is polyimide damping glue.

7. The self-adapting damped quartz crystal resonator of claim 1, wherein: The connection between the quartz crystal wafer (3) and the conductive silver glue (13) is provided with a downward corner portion (21) which is buckled with the support (6).

8. The self-adapting damped quartz crystal resonator of claim 1, wherein: The quartz crystal wafer (3) comprises a quartz crystal plate (15), an electrode surface (17) and an electrode lead (19); the upper surface and the lower surface of the quartz crystal plate (15) are both provided with the electrode surface (17); the overlapping part of the electrode surface (17) formed on the upper surface or the lower surface of the quartz crystal plate (15) is a main vibration area; the side edge of the quartz crystal plate (15) is provided with an electrode leg (18) corresponding to the internal electrode (5); the electrode leg (18) and the corresponding electrode surface (17) are connected by the electrode lead (19); and the electrode lead (19) is arranged in an inclined manner.

9. The self-adapting damped quartz crystal resonator of claim 8, wherein: The quartz crystal plate (15) is in a rectangular plate structure, a semicircular plate (16) is arranged at the free end of the quartz crystal plate (15), the electrode surface (17) is a circular surface, the electrode surface (17) is arranged concentrically with the semicircular plate (16), a plurality of arc-shaped partition through holes (20) are arranged on the quartz crystal plate (15) on the side of the electrode surface (17) close to the electrode foot (18), and the plurality of partition through holes (20) are arranged around the electrode surface (17).

10. The method of claim 1, wherein: The method comprises the following steps: S1: cleaning, the quartz crystal plate (15) is placed in a quartz fixture, the quartz fixture is provided with a positioning clamping groove, the quartz crystal plate (15) is ensured to be placed in order, and a solution is used to remove impurities on the surface of the quartz crystal plate (15) arranged in the quartz fixture, so that the adhesion of a metal film in a subsequent sputtering process is ensured; S2: sputtering, sputtering is to collide a metal target surface with high-energy particles, atoms on the metal surface exchange momentum with the high-energy particles, the atoms are bounced off the surface and are converted to the surface of the quartz crystal plate (15) to form a metal film through the action of an electric field, and the metal film comprises the electrode surface (17), the electrode foot (18) and the electrode lead (19); S3: fixing, a dispensing machine is used to apply damping glue (7) on the wavy upper end surface of the support table (6), the thickness of the glue layer is 0.03-0.05 mm, conductive silver glue (13) is injected into a dispensing groove (8), the quartz crystal wafer (3) plated with the metal film is carried on the two internal electrodes (5) of the base (1) through the conductive silver glue (13), the electrode foot (18) is in contact with the conductive silver glue (13), and the upper end surface of the support table (6) and the quartz crystal wafer (3) are bonded and fixed through the damping glue (7); S4: baking glue, baking glue is a heating method of a tunnel furnace, the base (1) carrying the quartz crystal wafer (3) is placed into the tunnel furnace to perform segmented baking of the glue: in the first stage, the temperature is raised from room temperature to 120 DEG C at a rate of 5 DEG C / min, the temperature is kept for 30 min, and the solvent in the glue layer is removed; in the second stage, the temperature is raised from 120 DEG C to 180 DEG C at a rate of 3 DEG C / min, the temperature is kept for 60 min, and the glue layer is preliminarily solidified; in the third stage, the temperature is raised from 180 DEG C to 200 DEG C at a rate of 2 DEG C / min, the temperature is kept for 40 min, and the glue layer is completely solidified; In the cooling stage, natural cooling is adopted to avoid thermal stress caused by sudden cooling, and finally the quartz crystal wafer (3) is fixed on the internal electrodes (5) of the base (1) and the support table (6) through the solidification of the conductive silver glue (13) and the damping glue (7); S5: fine adjustment: fine adjustment is a dry etching method, an ion beam bombards the metal film surface of the quartz crystal, and the frequency of the quartz crystal vibration body is adjusted to a target range by reducing the surface metal atoms; S6: sealing, adhesive is applied on the outer side wall of the boss (11) and the inner side wall of the necked portion (10), then the boss (11) at the lower end of the upper cover (2) is inserted into the necked portion (10) to be bonded and sealed, preliminary sealing is realized, then the base (1) and the outer side wall of the upper cover (2) are welded and sealed through the gold-tin alloy (12) on the upper end surface, and finally sealing is realized.

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