Thin film photovoltaic module, laminated photovoltaic module and power generation equipment

Abstract

The invention provides a thin film photovoltaic module, a laminated photovoltaic module and power generation equipment, and relates to the field of photovoltaic technology. The thin film photovoltaic module comprises a substrate, a battery pack and a bypass structure, the battery pack is arranged on the substrate, and the battery pack comprises a plurality of sub-batteries which are sequentially connected in series. The sub-battery comprises a first electrode, a battery layer and a second electrode which are sequentially stacked, the first electrode is in contact with the substrate, the first electrode comprises a first sub-electrode and a second sub-electrode which are arranged at an interval, and the second electrode is in contact with the first sub-electrode. The bypass structure is used for being connected with the battery pack in parallel, in the bypass structure and the battery pack which are connected in parallel, the bypass structure is electrically connected with the second electrode of the sub-battery located at one end of the battery pack and the second sub-electrode of the sub-battery located at the other end of the battery pack, and the bypass structure is conducted under the condition that one sub-battery in the battery pack is shielded. And reverse bias protection can be realized for a plurality of sub-batteries in the battery pack through the bypass structure, so that the processing cost can be reduced.

Description

Technical Field

[0001] This application relates to the field of photovoltaic technology, and in particular to a thin-film photovoltaic module, a multilayer photovoltaic module, and a power generation device. Background Technology

[0002] Existing thin-film photovoltaic (PV) modules typically consist of multiple sub-cells connected in series, each capable of generating photocurrent. However, in practical applications, some sub-cells are easily shaded, and these shaded sub-cells are susceptible to being subjected to reverse bias voltage. This can lead to a rapid decrease in the output power of the shaded sub-cells or damage due to reverse breakdown, thus affecting the reliability of the thin-film PV module. Summary of the Invention

[0003] This application provides a thin-film photovoltaic module, a multilayer photovoltaic module, and a power generation device, aiming to solve the technical problem of low operational reliability of thin-film photovoltaic modules.

[0004] In a first aspect, embodiments of this application provide a thin-film photovoltaic module. The thin-film photovoltaic module includes a substrate, a battery pack, and a bypass structure. The battery pack is disposed on the substrate and includes multiple sub-cells connected in series. The sub-cells located at opposite ends of the battery pack are designated as a first sub-cell and a second sub-cell. Each sub-cell includes a first electrode, a battery layer, and a second electrode stacked sequentially. The first electrode is in contact with the substrate and includes a first sub-electrode and a second sub-electrode spaced apart. The battery layer also has conductive channels, and the second electrode fills these conductive channels and is in contact with the first sub-electrode. The bypass structure is used to connect in parallel with the battery pack. In the parallel bypass structure and battery pack, the bypass structure is electrically connected to the second electrode of the first sub-cell and the second sub-electrode of the second sub-cell. When the photocurrent generated by one sub-cell in the battery pack is less than a target current, the bypass structure is activated.

[0005] The thin-film photovoltaic (PV) module provided in this application embodiment can be applied in power generation equipment. In the power generation equipment, multiple thin-film PV modules are connected in series, and each thin-film PV module can absorb light and output photocurrent. In the thin-film PV module, light can pass through the substrate and then through the first electrode of each sub-cell to the cell layer. The cell layer can absorb light and generate electrons and holes. Among the electrons and holes, one flows to the second electrode, and the other flows to the second sub-electrode, thereby the sub-cell can generate photocurrent. The photocurrent generated by the sub-cell is equal to the target current. Because the second electrode fills the conductive channel and is in contact with the first sub-electrode, electrons generated in the cell layer of one sub-cell can recombine with holes generated in the cell layer of another sub-cell, realizing the series connection between multiple sub-cells.

[0006] When a sub-cell is shaded, the photocurrent generated by that sub-cell is less than the target current. Since this sub-cell is connected in series with other sub-cells, the current must be matched. Therefore, the shaded sub-cell is reverse-biased, leading to reverse breakdown and failure of the cell layer. In this embodiment, the bypass structure is connected in parallel with the battery pack and electrically connected to the second electrode of the first sub-cell and the second sub-electrode of the second sub-cell. When the current generated by one of the sub-cells in the battery pack is less than the target current, the bypass structure is activated. When there is a shaded sub-cell in the battery pack, the sub-cell can be bypassed by the corresponding bypass structure. Most of the current flowing to the battery pack is diverted by the corresponding bypass structure, achieving reverse bias protection for the shaded sub-cell. This helps reduce the failure rate of the thin-film photovoltaic module and improves its operational reliability. Furthermore, multiple sub-cells in the battery pack can be reverse-biased with a single bypass structure. This reduces the cost of reverse bias protection for the battery pack and simplifies the structure, simplifying the manufacturing process, improving the processing efficiency of the thin-film photovoltaic module, and reducing processing costs.

[0007] In one possible implementation, the bypass structure includes at least one diode, a first conductive element, and a second conductive element. The diode includes a first semiconductor and a second semiconductor in contact. The first conductive element is in contact with the first semiconductor, and the second conductive element is in contact with the second semiconductor. The first conductive element and the second conductive element are spaced apart. In the parallel bypass structure and battery pack, the first conductive element is electrically connected to the second electrode of the first sub-battery, and the second conductive element is electrically connected to the second sub-electrode of the second sub-battery.

[0008] In this parallel bypass structure and battery pack, the diode is electrically connected to the second electrode of the first sub-cell through the first conductive element, and to the second sub-electrode of the second sub-cell through the second conductive element. Since the resistance of the first and second conductive elements is low, this helps to reduce the resistance of the bypass structure, improve the current-carrying efficiency of the bypass structure, and reduce the power loss of the thin-film photovoltaic module.

[0009] In one possible implementation, multiple sub-cells are arranged sequentially along the width of the sub-cells, and in two adjacent sub-cells, the first sub-electrode of one sub-cell is in contact with the second sub-electrode of the other sub-cell.

[0010] In this way, by contacting the first sub-electrode of one of the two adjacent sub-cells with the second sub-electrode of the other sub-cell, the two adjacent sub-cells can be connected in series. This avoids introducing wiring between the two adjacent sub-cells, which is beneficial to improving the structural compactness of the thin-film photovoltaic module and to the miniaturization design of the thin-film photovoltaic module.

[0011] In one possible implementation, in a parallel bypass structure and battery pack, the diode is located in the middle of the sub-cell along the length of the sub-cell.

[0012] In parallel bypass structures and battery packs, when the bypass structure is on, a portion of the current flowing to the battery pack travels from the end of the sub-cell along its length to the diode. Because the sub-cell is quite large along its length, the long current path results in low current-carrying efficiency. Designing the diode to be located in the middle of the sub-cell along its length helps shorten the current path from the end of the sub-cell to the diode, thus improving the current-carrying efficiency of the bypass structure and reducing power loss in the thin-film photovoltaic module.

[0013] In one possible implementation, the diode is disposed on the side of the battery pack facing away from the substrate, and the size of the diode is smaller than the size of the sub-cell along the length of the sub-cell.

[0014] In this way, the second electrode of the sub-cell in the battery pack can be partially exposed to the outside of the thin-film photovoltaic module. Light can not only be incident on the battery layer through the substrate, but also through the second electrode. The battery layer can absorb light from both sides, which is beneficial to improving the photoelectric conversion efficiency of the sub-cell and the output efficiency of the thin-film photovoltaic module. Moreover, it is beneficial to reduce the materials used in the preparation of the bypass structure and reduce processing costs.

[0015] In one possible implementation, the first conductive element includes a first segment. In the parallel bypass structure and battery pack, the first segment is stacked with the second electrode of the first sub-cell in the thickness direction of the sub-cell and faces away from the substrate. The dimension of the first segment in the thickness direction of the sub-cell is larger than the dimension of the second electrode in the thickness direction of the sub-cell.

[0016] In this way, the first segment can be made larger in the thickness direction of the sub-cell, and the current-carrying efficiency of the first segment can be higher than that of the second electrode. This is beneficial to improving the current-carrying efficiency between the second electrode and the bypass structure, and thus reducing the power loss of the thin-film photovoltaic module. Moreover, the design of stacking the first segment and the second electrode helps to increase the contact area between the first segment and the second electrode, which in turn helps to improve the current-carrying efficiency and reduce the power loss of the thin-film photovoltaic module.

[0017] In one possible implementation, the dimensions of the first segment are equal to the dimensions of the second electrode along the length of the sub-cell.

[0018] Because the second electrode is much larger in the length direction of the sub-cell, the efficiency of current transmission in the second electrode is lower than that in the first segment. This design ensures that the current can be transmitted along the thickness direction of the sub-cell between the first segment and the end of the second electrode in the length direction of the sub-cell. This avoids the situation where the current needs to be transmitted between the end of the first segment and the end of the second electrode in the length direction of the sub-cell, which is beneficial to improving the current transmission efficiency between the second electrode and the first segment and reducing the power loss of the thin-film photovoltaic module.

[0019] In one possible implementation, the area of ​​the first segment projected along the thickness direction of the sub-cell is smaller than the area of ​​the second electrode projected along the thickness direction of the sub-cell.

[0020] This helps reduce the materials used in the first stage of manufacturing, reduces the materials used in the first conductive component, and reduces the processing costs of the bypass structure and thin-film photovoltaic modules.

[0021] In one possible implementation, the first conductive element further includes a second segment disposed between the first segment and the first semiconductor, wherein the size of the second segment is smaller than the size of the diode along the length of the sub-cell.

[0022] This design helps reduce the materials used in the second stage and the first conductive component, and also reduces the processing costs of the bypass structure and thin-film photovoltaic modules. Furthermore, since the diode conducts current through the contact between the first and second semiconductors, this design increases the contact area between them, improves the diode's current-carrying efficiency, and reduces the power loss of the thin-film photovoltaic module.

[0023] In one possible implementation, the bypass structure includes an insulating layer disposed between the battery pack and the diode, and both the first conductive element and the second conductive element are at least partially disposed on the side of the insulating layer facing the diode.

[0024] In this way, the first conductive component, the second conductive component, and the diode can be fixed through the insulating layer, forming a stable bypass structure. This improves the structural stability of the bypass structure. The modular design of the bypass structure also enhances its processing efficiency and yield, reducing the processing cost of thin-film photovoltaic modules. Furthermore, this design does not affect the fabrication of sub-cells, avoiding the introduction of additional complex processes, simplifying the processing flow of thin-film photovoltaic modules, facilitating industrialization, and offering broad application scenarios and strong versatility.

[0025] In one possible implementation, the projection of the diode along the thickness direction of the diode lies within the projection of the insulating layer along the thickness direction of the diode.

[0026] This avoids direct contact between the diode and the sub-cell. In the fabrication process of thin-film photovoltaic modules, the diode can be formed on the insulating layer first, and then the insulating layer is placed on the cell assembly. This reduces the difficulty of setting up bypass structures on the cell assembly, improves processing efficiency, and reduces processing costs.

[0027] In one possible implementation, in the thickness direction of the diode, a first conductive element portion is disposed on one side of a first semiconductor, and a second conductive element portion is disposed on one side of a second semiconductor.

[0028] This is beneficial for increasing the contact area between the first conductive element and the first semiconductor, as well as the contact area between the second conductive element and the second semiconductor, thereby improving the current-carrying efficiency between the first and second conductive elements and the diode, and reducing the power loss of the thin-film photovoltaic module.

[0029] In one possible implementation, a first semiconductor and a second semiconductor are arranged sequentially in a direction perpendicular to the thickness direction of the diode, and a first conductive part is disposed on the side of the first semiconductor facing away from the insulating layer.

[0030] The design of the first conductive element being disposed on the side of the first semiconductor away from the insulating layer is beneficial to increasing the size of the portion of the first conductive element that is misaligned with the first semiconductor in the thickness direction of the diode, which is beneficial to improving the current carrying efficiency of the first conductive element and reducing the power loss of the thin-film photovoltaic module.

[0031] In one possible implementation, a first semiconductor and a second semiconductor are sequentially disposed in a direction perpendicular to the thickness direction of the diode, and a first conductive element is disposed between the first semiconductor and the insulating layer.

[0032] The design of the first conductive element being disposed between the first semiconductor and the insulating layer is beneficial to reducing the size of the portion of the first conductive element that is misaligned with the first semiconductor in the thickness direction of the diode, which is beneficial to reducing the material used in the fabrication of the first conductive element, and also to reducing the processing cost of the bypass structure and thin-film photovoltaic module.

[0033] In one possible implementation, the projection of the first semiconductor along the thickness direction of the diode at least partially overlaps with the projection of the second semiconductor along the thickness direction of the diode.

[0034] This is beneficial for increasing the contact area between the first semiconductor and the second semiconductor, improving the current flow efficiency between the first semiconductor and the second semiconductor, improving the current flow efficiency of the bypass structure, and reducing the power loss of the thin-film photovoltaic module.

[0035] In one possible implementation, there are multiple battery packs connected in series. The second sub-cell of one battery pack is connected in series with the first sub-cell of another battery pack. In the two battery packs connected in series, the bypass structure is in contact with the second electrode of the first sub-cell of one battery pack and with the second electrode of the first sub-cell of the other battery pack.

[0036] In this way, when there is a shaded sub-cell in a battery pack, the corresponding bypass structure can be turned on, which can bypass the battery pack and prevent the shaded battery pack from affecting the normal operation of other battery packs, thus helping to reduce the power loss of thin-film photovoltaic modules.

[0037] In one possible implementation, the battery pack includes a first sub-battery pack and a second sub-battery pack, which are connected in parallel. Both the first and second sub-battery packs include multiple sub-cells connected in series. In the parallel battery pack and bypass structure, the bypass structure is connected in parallel with the first and second sub-battery packs. When the photocurrent generated by one of the sub-cells in the first and / or second sub-battery packs is less than the target current, the bypass structure is turned on.

[0038] In this parallel bypass structure and battery pack, both the first and second sub-cells can output photocurrent. The photocurrent output by the battery pack is the combined photocurrent of the first and second sub-cells. The battery pack structure is diverse and can be designed according to requirements. Moreover, when the bypass structure is on, it can provide reverse bias protection for multiple sub-cells in both the first and second sub-cells, which helps reduce the failure rate of thin-film photovoltaic modules and improve their operational reliability. In addition, a single bypass structure can provide reverse bias protection for more sub-cells, which helps improve the utilization rate of the bypass structure and reduce the processing cost of thin-film photovoltaic modules.

[0039] Secondly, embodiments of this application also provide a multilayer photovoltaic module. The multilayer photovoltaic module includes a thin-film photovoltaic module, a voltage conversion module, and a photovoltaic module as described in any of the first aspects, wherein the thin-film photovoltaic module and the photovoltaic module are stacked together, and the voltage conversion module is used to convert the output voltage of the thin-film photovoltaic module into a target voltage; and / or, the voltage conversion module is used to convert the output voltage of the photovoltaic module into a target voltage.

[0040] Thirdly, embodiments of this application also provide a power generation device. The power generation device includes a plurality of thin-film photovoltaic modules as described in any of the first aspects, wherein the plurality of thin-film photovoltaic modules are connected in series; or, the power generation device includes a plurality of tandem photovoltaic modules as described in the second aspect, wherein the plurality of tandem photovoltaic modules are connected in series. Attached Figure Description

[0041] To more clearly illustrate the technical solutions in the embodiments of this application or the background art, the accompanying drawings used in the embodiments of this application or the background art will be described below.

[0042] Figure 1 This is a structural block diagram of a power generation device provided in an embodiment of this application in an application scenario;

[0043] Figure 2 yes Figure 1 The diagram shows a three-dimensional structure of a thin-film photovoltaic module.

[0044] Figure 3 yes Figure 2 The diagram shown is a cross-section of a thin-film photovoltaic module along line III-III.

[0045] Figure 4 yes Figure 3 An enlarged view of part A of the thin-film photovoltaic module shown;

[0046] Figure 5 yes Figure 3 The diagram shows the current flow direction of part A of the thin-film photovoltaic module when the bypass structure is not conducting.

[0047] Figure 6 yes Figure 3 The diagram shows the current flow direction of a thin-film photovoltaic module at another angle when the bypass structure is not conducting.

[0048] Figure 7 yes Figure 3 The diagram shows the current flow direction of part A of the thin-film photovoltaic module when the bypass structure is on.

[0049] Figure 8 yes Figure 3 The diagram shows the current flow direction of a thin-film photovoltaic module at another angle when the bypass structure is on.

[0050] Figure 9 yes Figure 3 An enlarged view of part B of the thin-film photovoltaic module shown;

[0051] Figure 10 This is a partial structural schematic diagram of another thin-film photovoltaic module provided in the embodiments of this application;

[0052] Figure 11 This is a partial structural schematic diagram of another thin-film photovoltaic module provided in the embodiments of this application;

[0053] Figure 12 This is a partial structural schematic diagram of another thin-film photovoltaic module provided in the embodiments of this application;

[0054] Figure 13This is a schematic diagram of another thin-film photovoltaic module provided in the embodiments of this application;

[0055] Figure 14 This is a three-dimensional structural schematic diagram of another thin-film photovoltaic module provided in the embodiments of this application;

[0056] Figure 15 This is a schematic diagram of another thin-film photovoltaic module provided in the embodiments of this application;

[0057] Figure 16 This is a partial structural schematic diagram of another thin-film photovoltaic module provided in the embodiments of this application;

[0058] Figure 17 This is a partial structural schematic diagram of another thin-film photovoltaic module provided in the embodiments of this application;

[0059] Figure 18 This is a partial structural schematic diagram of another thin-film photovoltaic module provided in the embodiments of this application;

[0060] Figure 19 This is a structural block diagram of another power generation device provided in this application embodiment in an application scenario;

[0061] Figure 20 yes Figure 19 The diagram shows the structure of the stacked photovoltaic module in the power generation equipment.

[0062] Figure 21 yes Figure 19 The diagram shows the electrical principle of the tandem photovoltaic module in the power generation equipment. Detailed Implementation

[0063] This application provides a thin-film photovoltaic module, a tandem photovoltaic module, and a power generation device. The thin-film photovoltaic module can be directly applied to the power generation device; it can also be applied to the tandem photovoltaic module, which in turn can be used in the power generation device. It should be noted that in this application embodiment, the "equality" of feature A and feature B can mean complete equality or allow for a slight deviation.

[0064] The embodiments of this application are described below with reference to the accompanying drawings.

[0065] Please see Figure 1 , Figure 1 This is a structural block diagram of a power generation device 1000 provided in an embodiment of this application in an application scenario.

[0066] like Figure 1As shown, the thin-film photovoltaic module 100 can be directly applied to the power generation equipment 1000. The power generation equipment 1000 can supply power to the power grid 3000 through the power conversion device 2000. Specifically, the power generation equipment 1000 includes multiple thin-film photovoltaic modules 100, which are connected in series. The thin-film photovoltaic modules 100 are used to convert light energy into electrical energy and output direct current (DC). The power conversion device 2000 can be used to convert the DC output from the multiple thin-film photovoltaic modules 100 into alternating current (AC) to supply the power grid 3000. The power conversion device 2000 can be a photovoltaic inverter or other inverters. The power conversion device 2000 can also be used to convert the DC output from the multiple thin-film photovoltaic modules 100 into AC to supply AC loads. AC loads can be electronic devices that use AC power, such as motors, fans, or air conditioners. The power conversion device 2000 can also be used to perform voltage conversion on the DC output from the multiple thin-film photovoltaic modules 100. The DC power after voltage conversion by the power conversion device 2000 can be delivered to the DC load to supply the DC load. DC loads can be batteries or other electronic devices that use DC power. Thin-film photovoltaic modules 100 can be applied to solar power generation scenarios such as ground-mounted power plants, distributed generation, building-integrated photovoltaics, and remote grid-connected areas.

[0067] Please see Figure 2 , Figure 3 , Figure 4 , Figure 5 , Figure 6 , Figure 7 , Figure 8 and Figure 9 and combined Figure 1 , Figure 2 yes Figure 1 The diagram shows a three-dimensional structure of the thin-film photovoltaic module 100. Figure 3 yes Figure 2 The diagram shows a cross-section of the thin-film photovoltaic module 100 along line II II II. Figure 4 yes Figure 3 An enlarged view of part A of the thin-film photovoltaic module 100 shown. Figure 5 yes Figure 3 The diagram shows the current flow direction of part A of the thin-film photovoltaic module 100 when the bypass structure 30 is not turned on. Figure 6 yes Figure 3 The diagram shows the current flow direction of the thin-film photovoltaic module 100 at another angle when the bypass structure 30 is not conducting. Figure 7 yes Figure 3 The diagram shows the current flow direction of part A of the thin-film photovoltaic module 100 when the bypass structure 30 is turned on. Figure 8 yes Figure 3The diagram shows the current flow direction of the thin-film photovoltaic module 100 at another angle when the bypass structure 30 is turned on. Figure 9 yes Figure 3 An enlarged view of part B of the thin-film photovoltaic module 100 shown.

[0068] It should be noted that, in Figure 5 , Figure 6 , Figure 7 and Figure 8 In the image, the dashed line with an arrow indicates the direction of photocurrent flow. Figure 8 The diagonal line filling is used to indicate the obscured sub-cell 21. Figure 6 and Figure 8 In the image, the blank space between the two dashed lines represents the omitted portion of the thin-film photovoltaic module 100.

[0069] like Figure 2 , Figure 3 and Figure 4 As shown, the thin-film photovoltaic module 100 may include a substrate 10 and a photovoltaic module 101, with the photovoltaic module 101 disposed on the substrate 10. Exemplarily, the substrate 10 may be a rigid substrate made of, but not limited to, glass or quartz glass, or a flexible substrate made of, but not limited to, polyethylene terephthalate (PET) or polyethylene naphthalate (PEN). The photovoltaic module 101 may include a battery pack 20 and a bypass structure 30. The battery pack 20 is disposed on the substrate 10 and includes a plurality of sub-cells 21 connected in series. The bypass structure 30 is used to connect in parallel with the battery pack 20. In this embodiment, the width direction of the sub-cell 21 is the X-axis direction, the length direction of the sub-cell 21 is the Y-axis direction, and the thickness direction of the sub-cell 21 is the Z-axis direction.

[0070] like Figure 4 , Figure 5 and Figure 6 As shown, the sub-cell 21 includes a first electrode 211, a cell layer 212, and a second electrode 213 stacked sequentially. The first electrode 211 is in contact with the substrate 10. Specifically, in the Z-axis direction, the first electrode 211 is stacked on one side of the substrate 10 and fixedly connected to the substrate 10. The first electrode 211 includes a first sub-electrode 2111 and a second sub-electrode 2112 spaced apart. The cell layer 212 also has a conductive channel 214, and the second electrode 213 fills the conductive channel 214 and is in contact with the first sub-electrode 2111. Specifically, the conductive channel 214 penetrates the cell layer 212 along the Z-axis direction, and the projection of the conductive channel 214 along the Z-axis direction overlaps with the projection of the first sub-electrode 2111 along the Z-axis direction. The cell layer 212 is used to generate photocurrent.

[0071] For example, the material of the second electrode 213 may be the same as that of the first electrode 211 (including the first sub-electrode 2111 and the second sub-electrode 2112). The first sub-electrode 2111, the second sub-electrode 2112, and the second electrode 213 are all transparent conductive oxide (TCO) layers. The TCO may be made of one or more materials selected from, but not limited to, indium tin oxide (ITO), fluorine-doped tin oxide (FTO), and indium zinc oxide (IZO). In other embodiments, the material of the second electrode 213 may not be the same as that of the first electrode 211. The second electrode 213 may also be made of one or more materials selected from, but not limited to, Al, Ag, Au, Mo, Cr, Ti, Ni, Cu, and Pt.

[0072] In the sub-cell 21, the cell layer 212 includes a first transport layer 2121, a light-absorbing layer 2122, and a second transport layer 2123 sequentially stacked in the Z-axis direction. The first transport layer 2121 is in contact with the first electrode 211. Specifically, the first transport layer 2121 may be partially stacked on the side of the first sub-electrode 2111 facing away from the substrate 10 and the side of the second sub-electrode 2112 facing away from the substrate 10, partially filling the space between the first sub-electrode 2111 and the second sub-electrode 2112 and contacting the substrate 10. That is, the gap between the first sub-electrode 2111 and the second sub-electrode 2112 is filled by the first transport layer 2121. In some other embodiments, the first transport layer 2121 may also be stacked only on the side of the first sub-electrode 2111 facing away from the substrate 10 and the side of the second sub-electrode 2112 facing away from the substrate 10. The second transport layer 2123 is in contact with the second electrode 213. Specifically, the second transmission layer 2123 and the second electrode 213 are stacked and fixedly connected.

[0073] The light-absorbing layer 2122 is used to absorb light and generate electrons and holes. Of these electrons and holes, one flows to the second sub-electrode 2112 via the first transport layer 2121, and the other flows to the second electrode 213 via the second transport layer 2123. Thus, the battery layer 212 can generate a photocurrent. The light-absorbing layer 2122 can be made of a light-converting material. For example, the light-converting material can be perovskite, specifically ABX3 type perovskite; where A+ is one or more of Rb+, Cs+, CH3NH3+ (MA+), ++H2C(=NH)NH2 (FA), B is one or more of Pb, Sn, and other metal elements, and X is one or more of I, Br, Cl, F, and other halogen elements. In other embodiments, the light-converting material can also be, but is not limited to, organic semiconductor materials, copper indium gallium selenide, or cadmium telluride.

[0074] In the first transport layer 2121 and the second transport layer 2123, one is a hole transport layer and the other is an electron transport layer. The hole transport layer is made of a hole-type semiconductor, which may be a combination of one or more materials including but not limited to nickel oxide (NiO), cuprous oxide (Cu2O), molybdenum oxide (MoO3), copper iodide (CuI), cuprous thiocyanate (CuSCN), reduced graphene oxide, poly(triaryl amine) (PTAA), 2,2',7,7'-tetratetra[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene (Spiro-OMeTAD), poly(3,4-ethylenedioxythiophene:polystyrene sulfonate (PEDOT:PSS), and poly(4-phenyl)(4-butylphenyl)amine (Ploy-TPD). The electron transport layer is made of electronic semiconductors, specifically a combination of one or more materials including but not limited to titanium oxide, zinc oxide, tin oxide, fullerenes and their related derivatives.

[0075] In two sub-cells 21 connected in series, the first sub-electrode 2111 of one sub-cell 21 is electrically connected to the second sub-electrode 2112 of the other sub-cell 21. In the battery pack 20, the plurality of sub-cells 21 include a first sub-cell 21a and a second sub-cell 21b located at both ends of the battery pack 20. That is, the sub-cells 21 located at both ends of the battery pack 20 are respectively the first sub-cell 21a and the second sub-cell 21b. The battery pack 20 can be electrically connected to other devices (such as other battery packs 20 or other thin-film photovoltaic modules 100) through the first sub-electrode 2111 of the first sub-cell 21a and the second sub-electrode 2112 of the second sub-cell 21b.

[0076] For example, the first transport layer 2121 is a hole transport layer, and the second transport layer 2123 is an electron transport layer. The light-absorbing layer 2122 can absorb light and generate electrons and holes. Holes are transferred to the second sub-electrode 2112 via the first transport layer 2121, and electrons are transferred to the second electrode 213 via the second transport layer 2123. The cell layer 212 can generate photocurrent. In the two sub-cells 21 connected in series, electrons located at the second electrode 213 of one sub-cell 21 can recombine with holes located at the second sub-electrode 2112 of the other sub-cell 21.

[0077] When sub-cell 21 is not blocked, the photocurrent generated by sub-cell 21 is equal to the target current I1. In each sub-cell 21, the photocurrent can flow from the first sub-electrode 2111 through the second electrode 213 and the battery layer 212 to the second sub-electrode 2112. In the battery pack 20, the photocurrent can flow from the first sub-cell 21a to the second sub-cell 21b. When sub-cell 21 is blocked, the photocurrent generated by sub-cell 21 is less than the target current I1. Specifically, when sub-cell 212 is blocked, the photocurrent generated by sub-cell 21 can be greater than or equal to 0.

[0078] In some other embodiments, the first transport layer 2121 may be an electron transport layer, and the second transport layer 2123 may be a hole transport layer. When the battery layer 212 is not blocked, in each sub-cell 21, the photocurrent can also flow from the second sub-electrode 2112 through the battery layer 212 and the second electrode 213 to the first sub-electrode 2111. In the battery pack 20, the photocurrent can also flow from the second sub-cell 21b to the first sub-cell 21a.

[0079] like Figure 5 , Figure 7 and Figure 8 As shown, in the parallel bypass structure 30 and battery pack 20, the bypass structure 30 is electrically connected to the second electrode 213 of the first sub-cell 21a and the second sub-electrode 2112 of the second sub-cell 21b. The bypass structure 30 is turned on when the photocurrent generated by one sub-cell 21 in the battery pack 20 is less than the target current I1. That is, the bypass structure 30 is turned on when one sub-cell 21 in the battery pack 20 is blocked. Conversely, in the parallel bypass structure 30 and battery pack 20, the bypass structure 30 is turned off when the photocurrent generated by each sub-cell 21 is equal to the target current I1.

[0080] For example, in the parallel battery pack 20 and bypass structure 30, when the bypass structure 30 is turned on, the current flowing to the battery pack 20 flows into the first sub-electrode 2111 of the first sub-cell 21a, then through the second electrode 213 of the first sub-cell 21a to the bypass structure 30, and then out of the battery pack 20 from the bypass structure 30. In some other embodiments, in the parallel battery pack 20 and bypass structure 30, when the bypass structure 30 is turned on, the current flowing to the battery pack 20 can also flow into the second sub-electrode 2112 of the second sub-cell 21b, then through the second electrode 213 of the second sub-cell 21b to the bypass structure 30, and then out of the battery pack 20 from the bypass structure 30.

[0081] The thin-film photovoltaic module 100 provided in this application embodiment can be applied to power generation equipment 1000 (such as...). Figure 1As shown, in the power generation device 1000, multiple thin-film photovoltaic modules 100 are connected in series. Each thin-film photovoltaic module 100 can absorb light and output photocurrent. In the thin-film photovoltaic module 100, light can pass through the substrate 10 and then through the first electrode 211 of each sub-cell 21 to the cell layer 212. The cell layer 212 can absorb light and generate electrons and holes. Among the electrons and holes, one flows to the second electrode 213 and the other flows to the second sub-electrode 2112, so that the sub-cell 21 can generate photocurrent. The photocurrent generated by the sub-cell 21 is equal to the target current I1. Since the second electrode 213 fills the conductive channel 214 and is in contact with the first sub-electrode 2111, the electrons generated by the cell layer 212 of one sub-cell 21 can recombine with the holes generated by the cell layer 212 of another sub-cell 21, realizing the series connection between multiple sub-cells 21.

[0082] When a sub-cell 21 is shaded, the photocurrent generated by that sub-cell 21 is less than the target current I1. Since this sub-cell 21 is connected in series with other sub-cells 21, the current must be matched. Therefore, the shaded sub-cell 21 is reverse-biased and enters reverse bias, causing the cell layer 212 to fail due to reverse breakdown. In this embodiment, since the bypass structure 30 is connected in parallel with the battery pack 20 and electrically connected to the second electrode 213 of the first sub-cell 21 and the second sub-electrode of the second sub-cell 21, the bypass structure 30 is turned on when the current generated by one of the sub-cells 21 in the battery pack 20 is less than the target current I1. When there is a shaded sub-cell 21 in the battery pack 20, the sub-cell 21 can be bypassed by the corresponding bypass structure 30. Most of the current flowing to the battery pack 20 (e.g., the photocurrent generated by other thin-film photovoltaic modules 100) is shunted by the corresponding bypass structure 30, realizing reverse bias protection for the shaded sub-cell 21. This is beneficial to reducing the failure rate of the thin-film photovoltaic module 100 and improving the working reliability of the thin-film photovoltaic module 100. In addition, reverse bias protection for multiple sub-cells 21 in the battery pack 20 can be achieved through a bypass structure 30. On the one hand, this helps to reduce the cost of reverse bias protection for the battery pack 20; on the other hand, it simplifies the structure, which helps to simplify the processing technology, improve the processing efficiency of the thin-film photovoltaic module 100, and reduce processing costs.

[0083] like Figure 4As shown, in some embodiments, multiple sub-cells 21 are arranged sequentially along the width direction (e.g., the X-axis direction) of the sub-cells 21. In two adjacent sub-cells 21, the first sub-electrode 2111 of one sub-cell 21 is in contact with the second sub-electrode 2112 of the other sub-cell 21. The multiple sub-cells 21 are connected in series along the X-axis direction. Specifically, in two adjacent sub-cells 21, the first sub-electrode 2111 of one sub-cell 21 is fixedly connected to the second sub-electrode 2112 of the other sub-cell 21. Furthermore, in two adjacent sub-cells 21, in the X-axis direction, the second electrodes 213 of one sub-cell 21 are spaced apart from the second electrodes 213 of the other sub-cell 21, and the battery layers 212 of one sub-cell 21 are spaced apart from the battery layers 212 of the other sub-cell 21. In this way, by having the first sub-electrode 2111 of one of the two adjacent sub-cells 21 contact the second sub-electrode 2112 of the other sub-cell, the two adjacent sub-cells 21 can be connected in series. This avoids introducing wiring between the two adjacent sub-cells 21, which is beneficial to improving the structural compactness of the thin-film photovoltaic module 100 and to the miniaturization design of the thin-film photovoltaic module 100.

[0084] In other embodiments, multiple sub-cells 21 are also spaced apart along the X-axis, with a conductor between adjacent sub-cells 21. In two adjacent sub-cells 21, the conductor can be connected to the first sub-electrode 2111 of one sub-cell 21 and the second sub-electrode 2112 of the other sub-cell 21. Thus, adjacent sub-cells 21 can also be connected in series via the conductor. The methods for connecting multiple sub-cells 21 in series are varied and can be designed according to requirements.

[0085] like Figure 3 , Figure 5 and Figure 7 As shown, in some embodiments, there are multiple battery packs 20 connected in series, with the second sub-cell 21b of one battery pack 20 connected in series with the first sub-cell 21a of another battery pack 20. Specifically, in the X-axis direction, multiple battery packs 20 are arranged and connected in series, and in two adjacent battery packs 20, the second sub-cell 21b of one battery pack 20 is adjacent to and connected in series with the first sub-cell 21a of the other battery pack 20.

[0086] For example, the multiple battery packs 20 include a first battery pack 20a, a second battery pack 20b, and a third battery pack 20c. In the X-axis direction, the second battery pack 20b, the first battery pack 20a, and the third battery pack 20c are sequentially arranged and connected in series. Each of the first battery pack 20a, the second battery pack 20b, and the third battery pack 20c includes a first sub-battery 21a and a second sub-battery 21b. Both the first battery pack 20a and the third battery pack 20c also include a third sub-battery 21c. In the first battery pack 20a (and the third battery pack 20c), in the X-axis direction, the third sub-battery 21c is disposed between the first sub-battery 21a and the second sub-battery 21b, and is connected in series with both sub-batteries 21a and 21b. The number of third sub-batteries 21c can be one or more, and multiple third sub-batteries 21c can be sequentially arranged and connected in series along the X-axis direction. In some other embodiments, the third sub-battery 21c may be omitted. The second sub-cell 21b of the first battery pack 20a is adjacent to and connected in series with the first sub-cell 21a of the third battery pack 20c, and the second sub-cell 21b of the second battery pack 20b is adjacent to and connected in series with the first sub-cell 21a of the first battery pack 20a. For example, when the thin-film photovoltaic module 100 is not shaded, the photocurrent flows from the second battery pack 20b through the first battery pack 20a to the third battery pack 20c.

[0087] The number of bypass structures 30 can be multiple, including a first bypass structure 30a, a second bypass structure 30b, and a third bypass structure 30c. In the X-axis direction, the second bypass structure 30b, the first bypass structure 30a, and the third bypass structure 30c are arranged sequentially. Specifically, in the X-axis direction, the second bypass structure 30b, the first bypass structure 30a, and the third bypass structure 30c are fixedly connected sequentially. The first bypass structure 30a is connected in parallel with the first battery pack 20a, the second bypass structure 30b is connected in parallel with the second battery pack 20b, and the third bypass structure 30c is connected in parallel with the third battery pack 20c. In some other embodiments, the number of battery packs 20 and the number of bypass structures 30 can also be two, four, or more. Each battery pack 20 is connected in parallel with one bypass structure 30.

[0088] In some embodiments, in two battery packs 20 connected in series (e.g., in the first battery pack 20a and the third battery pack 20c), a first bypass structure 30a (i.e., bypass structure 30) contacts the second electrode 213 of the first sub-cell 21a of one battery pack 20 (e.g., the first battery pack 20a) and the second electrode 213 of the first sub-cell 21a of the other battery pack 20 (e.g., the third battery pack 20c). Through the first sub-cell 21a of the third battery pack 20c, the first bypass structure 30a is electrically connected to the second sub-electrode 2112 of the second sub-cell 21b of the first battery pack 20a. Thus, when a sub-cell 21 in a battery pack 20 is shaded, the corresponding bypass structure 30 can be turned on, bypassing the battery pack 20 and preventing the shaded battery pack 20 from affecting the normal operation of other battery packs 20, thereby reducing the power loss of the thin-film photovoltaic module 100.

[0089] When the first bypass structure 30a is turned on, the photocurrent flows from the second battery pack 20b into the first sub-electrode 2111 of the first sub-cell 21a of the first battery pack 20a, then through the second electrode 213 of the first sub-cell 21a of the first battery pack 20a into the first bypass structure 30a, and then through the first bypass structure 30a into the second electrode 213 of the first sub-cell 21a of the third battery pack 20c. Thus, the current flowing to the first battery pack 20a can be bypassed by the first bypass structure 30a, enabling current to flow to each sub-cell 21 in the first battery pack 20a, while preventing the first battery pack 20a from interfering with the normal operation of other battery packs 20.

[0090] like Figure 2 , Figure 3 and Figure 9 As shown, in some embodiments, the second battery pack 20b and the third battery pack 20c further include a connecting sub-battery 22. For ease of description, the connecting sub-battery 22 of the second battery pack 20b is defined as the first connecting sub-battery 22a, and the connecting sub-battery 22 of the third battery pack 20c is defined as the second connecting sub-battery 22b. Both the first connecting sub-battery 22a and the second connecting sub-battery 22b include a first connecting electrode 221, a connecting battery layer 222, and a second connecting electrode 223 sequentially stacked in the Z-axis direction. The first connecting electrode 221 is in contact with the substrate 10. Specifically, the first connecting electrode 221 is stacked and fixedly connected to the substrate 10. The material of the first connecting electrode 221 can be referred to the relevant description of the first sub-electrode 2111, the material of the second connecting electrode 223 can be referred to the relevant description of the second electrode 213, and the structure of the connecting battery layer 222 can be referred to the relevant description of the battery layer 212, and will not be repeated here. In the second connecting sub-battery 22b, the connecting battery layer 222 is also provided with a through hole 224, which penetrates the connecting battery layer 222 along the Z-axis direction. The second connecting electrode 223 fills the through hole 224 and contacts the first connecting electrode 221.

[0091] In the second battery pack 20b, in the X-axis direction, a first connecting sub-battery 22a is disposed on the side of the first sub-battery 21a facing away from the second sub-battery 21b, and the first connecting sub-battery 22a is connected in series with the first sub-battery 21a. Specifically, the first connecting electrode 221 of the first connecting sub-battery 22a is fixedly connected to the first sub-electrode 2111 of the first sub-battery 21a; wherein, in the X-axis direction, the connecting battery layer 222 of the first connecting sub-battery 22a is spaced apart from the battery layer 212 of the first sub-battery 21a. In the third battery pack 20c, in the X-axis direction, a second connecting sub-battery 22b is disposed on the side of the second sub-battery 21b facing away from the first sub-battery 21a, and the second connecting sub-battery 22b is connected in series with the second sub-battery 21b. Specifically, the first connecting electrode 221 of the second connecting sub-battery 22b is fixedly connected to the second sub-electrode 2112 of the second sub-battery 21b; wherein, in the X-axis direction, the connecting battery layer 222 of the second connecting sub-battery 22b and the battery layer 212 of the second sub-battery 21b are spaced apart.

[0092] The second bypass structure 30b contacts the second connecting electrode 223 of the first connecting sub-cell 22a and the second electrode 213 of the first sub-cell 21a of the first battery pack 20a. The second bypass structure 30b is electrically connected to the second electrode 213 of the first sub-cell 21a of the second battery pack 20b via the first connecting sub-cell 22a, and to the second sub-electrode 2112 of the second sub-cell 21b of the second battery pack 20a via the first sub-cell 21a of the first battery pack 20a. The first connecting sub-cell 22a absorbs light and generates a photocurrent. When the first connecting sub-cell 22a is operating normally, the photocurrent generated by the first connecting sub-cell 22a is equal to the target current I1. When the first connecting sub-cell 22a is blocked, the photocurrent generated by the first connecting sub-cell 22a is less than the target current I1. When the photocurrent generated by the first connecting sub-cell 22a is less than the target current I1, the second bypass structure 30b is turned on. The second bypass structure 30b can not only provide reverse bias protection for the multiple sub-cells 21 in the second battery pack 20b, but also provide reverse bias protection for the first connected sub-cell 22a.

[0093] The third bypass structure 30c contacts the second electrode 213 of the first sub-cell 21a of the third battery pack 20c and the second connecting electrode 223 of the second connecting sub-cell 22b. The third bypass structure 30c is electrically connected to the second sub-electrode 2112 of the second sub-cell 21b of the third battery pack 20c via the second connecting sub-cell 22b. The bypass structure 30c can be connected in parallel with the battery pack 20 in various ways. In some other embodiments, the first connecting sub-cell 22a may be omitted, and the second bypass structure 30b may contact and be electrically connected to the second electrode 213 of the first sub-cell 21a of the second battery pack 20b. The second connecting sub-cell 22b may be omitted. The third bypass structure 30c may also directly contact and be electrically connected to the second sub-electrode 2112 of the second sub-cell 21b of the third battery pack 20c.

[0094] It is understood that the photovoltaic module 101 is electrically connected to other devices (e.g., in parallel or in series with other photovoltaic modules 101) through the second connection electrode 223 of the first connecting sub-cell 22a and the second connection electrode 223 of the second connecting sub-cell 22b.

[0095] Next, the specific structure of the bypass structure 30 will be explained using the parallel connection of the first bypass structure 30a and the first battery pack 20a as an example.

[0096] like Figure 2 , Figure 7 and Figure 8 As shown, in some embodiments, the bypass structure 30 includes at least one diode 31, a first conductive element 32, and a second conductive element 33. The diode 31 includes a first semiconductor 311 and a second semiconductor 312 in contact. The first conductive element 32 is in contact with the first semiconductor 311, and the second conductive element 33 is in contact with the second semiconductor 312, with the first conductive element 32 and the second conductive element 33 spaced apart. In the parallel bypass structure 30 and battery pack 20, the first conductive element 32 is electrically connected to the second electrode 213 of the first sub-battery 21a, and the second conductive element 33 is electrically connected to the second sub-electrode 2112 of the second sub-battery 21b. In the X-axis direction, the first conductive element 32, the diode 31, and the second conductive element 33 are arranged sequentially, with the first conductive element 32 and the second conductive element 33 spaced apart. For example, the number of diodes 31 is one. When the bypass structure 30 is turned on, current flows from the first conductive element 32 through the first semiconductor 311 and the second semiconductor 312 of the diode 31 to the second conductive element 33. In some other embodiments, the number of diodes 31 may be two, three, or more. When the bypass structure 30 is turned on, current may also flow from the second conductive element 33 through the second semiconductor 312 and the first semiconductor 311 of the diodes 31 to the first conductive element 32.

[0097] Thus, in the parallel bypass structure 30 and battery pack 20, diode 31 is electrically connected to the second electrode 213 of the first sub-cell 21a through the first conductive element 32, and to the second sub-electrode 2112 of the second sub-cell 21b through the second conductive element 33. Since the resistance of the first conductive element 32 and the second conductive element 33 is low, this helps to reduce the resistance of the bypass structure 30, improve the current-carrying efficiency of the bypass structure 30, and reduce the power loss of the thin-film photovoltaic module 100.

[0098] exist Figure 2 , Figure 7 and Figure 8 In the illustrated embodiment, the first semiconductor 311 and the second semiconductor 312 can be sequentially arranged in a direction perpendicular to the thickness direction of the diode 31 (e.g., the X-axis direction). Specifically, in the X-axis direction, the first semiconductor 311 and the second semiconductor 312 are fixedly connected. Exemplarily, the first transport layer 2121 is a hole transport layer, the second transport layer 2123 is an electron transport layer, the first semiconductor 311 is a hole-type semiconductor (P-type semiconductor), and the second semiconductor 312 is an electron-type semiconductor (N-type semiconductor). Thus, in the parallel battery pack 20 and bypass structure 30, when one of the sub-cells 21 is blocked, the diode 31 can conduct. Current can flow from the first conductive element 32 through the first semiconductor 311 and the second semiconductor 312 to the second conductive element 33. In other embodiments, the first transport layer 2121 may be an electron transport layer, the second transport layer 2123 a hole transport layer, the first semiconductor 311 an electron-type semiconductor, and the second semiconductor 312 a hole-type semiconductor. Thus, in the parallel battery pack 20 and bypass structure 30, when one of the sub-cells 21 is blocked, the diode 31 can conduct. Current can flow from the second conductive element 33 through the second semiconductor 312 and the first semiconductor 311 to the first conductive element 32.

[0099] The first conductive element 32 of the first bypass structure 30a is in contact with the second electrode 213 of the first sub-cell 21a of the first battery pack 20a, and the second conductive element 33 of the first bypass structure 30a is in contact with the second electrode 213 of the first sub-cell 21a of the third battery pack 20c. The parallel connection of the second bypass structure 30b and the third bypass structure 30c can be referred to in the relevant description of the first bypass structure 30a, and will not be repeated here. In adjacent bypass structures 30, the first conductive element 32 of one is fixedly connected to the second conductive element 33 of the other. The first conductive element 32 and the second conductive element 33 can be made of metal materials including but not limited to copper, aluminum, or iron, or other conductive materials. The first conductive element 32 and the second conductive element 33 can be grid lines or busbars. The diode 31 can be a thin-film diode, a surface-mount diode, or other types of diodes.

[0100] In some embodiments, diode 31 is disposed on the side of the battery pack 20 facing away from substrate 10, and the size of diode 31 is smaller than the size of sub-cell 21 along its length (e.g., along the Y-axis). Specifically, in the Y-axis direction, the size of diode 31 is smaller than the size of second electrode 213. The side of second electrode 213 facing away from substrate 10 is exposed outside diode 31. This ensures that the second electrode 213 of sub-cell 21 in battery pack 20 can be partially exposed outside thin-film photovoltaic module 100. Light can not only pass through substrate 10 to battery layer 212, but also through second electrode 213 to battery layer 212. Battery layer 212 can absorb light from both sides, which is beneficial for improving the photoelectric conversion efficiency of sub-cell 21 and the output efficiency of thin-film photovoltaic module 100; moreover, it helps to reduce the materials used in the fabrication of bypass structure 30, thus reducing processing costs. In other embodiments, diode 31 may also be disposed on one side of battery pack 20 along the Y-axis.

[0101] In some embodiments, in the parallel bypass structure 30 and battery pack 20, the diode 31 is located in the middle of the sub-cell 21 along its length (e.g., in the Y-axis direction). Specifically, in the Y-axis direction, the diode 31 is located in the middle of the second electrode 213. The distance between the second electrode 213 and the diode 31 on one side of the second electrode 213 in the Y-axis direction and the distance between the second electrode 213 and the diode 31 on the other side of the second electrode 213 in the Y-axis direction are equal. For example, when the bypass structure 30 is turned on, a portion of the current flowing to the diode 31 flows from the end of the second electrode 213 of the first sub-cell 21a in the Y-axis direction to the first conductive element 32, and then propagates along the Y-axis direction before reaching the diode 31. In other embodiments, a portion of the current may also propagate along the Y-axis direction from the end of the second electrode 213 of the first sub-cell 21a, and then through the first conductive element 32 to the diode 31.

[0102] In the parallel bypass structure 30 and battery pack 20, when the bypass structure 30 is turned on, a portion of the current flowing to the battery pack 20 flows from the end of the sub-cell 21 along its length (e.g., the end of the sub-cell 21 in the Y-axis direction) to the diode 31. Because the sub-cell 21 is large in its length (e.g., in the Y-axis direction), the current transmission path is long, resulting in low current-carrying efficiency. The design of the diode 31 being located in the middle of the sub-cell 21 along its length (e.g., in the Y-axis direction) helps shorten the current path from the end of the sub-cell 21 along its length (e.g., in the Y-axis direction) to the diode 31, thereby improving the current-carrying efficiency of the bypass structure 30, reducing the power loss of the thin-film photovoltaic module 100, and increasing the output power of the thin-film photovoltaic module 100.

[0103] In some embodiments, the bypass structure 30 includes an insulating layer 34 disposed between the battery pack 20 and the diode 31. The first conductive element 32 and the second conductive element 33 are at least partially disposed on the side of the insulating layer 34 facing the diode 31. Thus, the first conductive element 32, the second conductive element 33, and the diode 31 can be fixed by the insulating layer 34, forming a stable bypass structure 30, which improves the structural stability of the bypass structure 30. The bypass structure 30 is modular, which improves its processing efficiency and yield, and reduces the processing cost of the thin-film photovoltaic module 100. Moreover, this design does not affect the processing of the sub-cell 21, avoiding the introduction of additional complex processes, simplifying the processing flow of the thin-film photovoltaic module 100, facilitating industrialization, and having wide application scenarios and strong universality.

[0104] exist Figure 2 , Figure 7 and Figure 8 In the illustrated embodiment, the insulating layer 34 is stacked on the side of the battery pack 20 facing away from the substrate 10. Specifically, the insulating layer 34 is stacked with the second electrode 213 and faces away from the substrate 10, and is fixedly connected to the second electrode 213. The insulating layer 34 can be made of, but is not limited to, epoxy resin, plastic, or other insulating layers. The insulating layer 34 of the first bypass structure 30a is stacked with the second electrode 213 of each sub-cell 21 in the first battery pack 20a, and is also stacked with the second electrode 213 of the first sub-cell 21a in the third battery pack 20c. In the first bypass structure 30a, the diode 31 is stacked with the insulating layer 34 and faces away from the substrate 10; in the Z-axis direction, a portion of the first conductive element 32 is disposed on the side of the insulating layer 34 facing the diode 31 and contacts the diode 31; in the X-axis direction, another portion of the first conductive element 32 is disposed on one side of the insulating layer 34 and contacts the second electrode 213 of the first sub-cell 21a of the first battery pack 20a. A portion of the second conductive element 33 is disposed on the side of the insulating layer 34 facing the diode 31 and is in contact with the diode 31; in the X-axis direction, another portion of the second conductive element 33 is disposed on the side of the insulating layer 34 away from the first conductive element 32 and is in contact with the second electrode 213 of the first sub-cell 21a of the third battery pack 20c.

[0105] In some embodiments, in two adjacent sub-cells 21, in the X-axis direction, the battery layer 212 of one sub-cell 21 is spaced apart from the battery layer 212 of the other sub-cell 21 and has a spacer groove 215. Specifically, in two adjacent sub-cells 21, the second electrode 213, battery layer 212, and second sub-electrode 2112 of one sub-cell 21 and the first sub-electrode 2111, battery layer 212, and second electrode 213 of the other sub-cell 21 together form the spacer groove 215. The dimension of the spacer groove 215 in the Z-axis direction is equal to the dimension of the sub-cell 21 in the Z-axis direction minus the dimension of the first electrode 211 in the Z-axis direction. The spacer groove 215 is used to fill the insulating member 216, which is used to be fixedly connected to the insulating layer 34. Specifically, in the fixedly connected insulating member 216 and insulating layer 34, in the Z-axis direction, the insulating member 216 and insulating layer 34 are stacked and face the substrate 10.

[0106] In this way, the insulating component 216 can support the insulating layer 34, which helps to improve the connection stability between the bypass structure 30 and the battery pack 20, and improves the structural stability and reliability of the thin-film photovoltaic module 100. Moreover, it helps to shorten the distance between the battery layers 212 of two adjacent sub-cells 21 in the X-axis direction, which helps to reduce the size of the thin-film photovoltaic module 100 in the X-axis direction, and facilitates the miniaturization design of the thin-film photovoltaic module 100.

[0107] In the fixed connection of the insulating component 216 and the insulating layer 34, the insulating component 216 and the insulating layer 34 can be integrally formed. This improves connection stability, structural stability, and reliability. The projection of the insulating component 216 along the Z-axis lies within the projection of the insulating layer 34 along the Z-axis. This reduces the size of the insulating component 216, lowers material costs, and reduces processing costs. For example, the insulating component 216 can be made of insulating materials with poor conductivity, including but not limited to epoxy resin, plastic, or rubber.

[0108] In some embodiments, the area of ​​the insulating layer 34 projected along the thickness direction (e.g., the Z-axis direction) of the sub-cell 21 is smaller than the area of ​​the battery pack 20 projected along the thickness direction of the sub-cell 21. Specifically, in the length direction (e.g., the Y-axis direction) of the sub-cell 21, the size of the insulating layer 34 is smaller than the size of the sub-cell 21, and the size of the insulating layer 34 is smaller than the size of the second electrode 213. This ensures that the second electrode 213 of the sub-cell 21 in the battery pack 20 can be partially exposed to the outside of the thin-film photovoltaic module 100. Light can be incident not only on the battery layer 212 through the substrate 10, but also on the battery layer 212 through the second electrode 213. The battery layer 212 can absorb light from both sides, which is beneficial to improving the photoelectric conversion efficiency of the sub-cell 21 and the output efficiency of the thin-film photovoltaic module 100. Moreover, it is beneficial to reduce the materials used in the fabrication of the bypass structure 30 and reduce processing costs.

[0109] Understandable, Figure 2 , Figure 7 and Figure 8 In the illustrated embodiment, during the process of setting the bypass structure 30 on the battery pack 20, insulating material can be first filled into the spacer groove 215 to form an insulating element 216, and insulating material can be covered on the insulating element 216 to form an insulating layer 34. A diode 31, a first conductive element 32, and a second conductive element 33 can be set on the insulating layer 34. In some other embodiments, during the process of setting the bypass structure 30 on the battery pack 20, the insulating layer 34 can be fabricated first, and an insulating element 216 can be formed on one side of the insulating layer 34. A diode 31, a first conductive element 32, and a second conductive element 33 can be set on the side of the insulating layer 34 opposite to the insulating element 216 to form a modular bypass structure 30. The modular bypass structure 30 can then be assembled with the battery pack 20 to achieve parallel connection between the bypass structure 30 and the battery pack 20.

[0110] In some embodiments, the projection of diode 31 along its thickness direction (e.g., the Z-axis direction) lies within the projection of insulating layer 34 along its thickness direction. This avoids direct contact between diode 31 and sub-cell 21. During the fabrication of thin-film photovoltaic module 100, diode 31 can be formed on insulating layer 34 first, and then insulating layer 34 can be placed on cell pack 20. This reduces the difficulty of setting bypass structure 30 on cell pack 20, improves processing efficiency, and reduces processing costs.

[0111] In some embodiments, the first conductive element 32 includes a first segment 321. The first segment 321 is disposed on one side of the insulating layer 34 in the X-axis direction. In the parallel bypass structure 30 and battery pack 20, in the thickness direction (e.g., the Z-axis direction) of the sub-cell 21, the first segment 321 is stacked with the second electrode 213 of the first sub-cell 21a and faces away from the substrate 10. The dimension of the first segment 321 in the thickness direction (e.g., the Z-axis direction) of the sub-cell 21 is larger than the dimension of the second electrode 213 in the thickness direction of the sub-cell 21. This allows the first segment 321 to be larger in the thickness direction of the sub-cell 21, resulting in a higher current-carrying efficiency compared to the second electrode 213. This improves the current-carrying efficiency between the second electrode 213 and the bypass structure 30, and helps reduce the power loss of the thin-film photovoltaic module 100. Moreover, the design of stacking the first segment 321 and the second electrode 213 is beneficial to increasing the contact area between the first segment 321 and the second electrode 213, which is beneficial to improving the current carrying efficiency and reducing the power loss of the thin-film photovoltaic module 100.

[0112] In some embodiments, the first conductive element 32 further includes a second segment 322 disposed between the first segment 321 and the first semiconductor 311. The second segment 322 extends along the X-axis. In the Z-axis direction, the second segment 322 is disposed on one side of the first segment 321 and on the side of the insulating layer 34 facing the diode 31. The second segment 322 is in contact with the first semiconductor 311 of the diode 31. In the length direction of the sub-cell 21 (e.g., in the Y-axis direction), the size of the second segment 322 is smaller than the size of the diode 31. This reduces the material used in manufacturing the second segment 322, reduces the material used in manufacturing the first conductive element 32, and reduces the processing cost of the bypass structure 30 and the thin-film photovoltaic module 100. Furthermore, since the diode 31 achieves current flow through the contact between the first semiconductor 311 and the second semiconductor 312, this design increases the contact area between the first semiconductor 311 and the second semiconductor 312, improves the current-carrying efficiency of the diode 31, and reduces the power loss of the thin-film photovoltaic module 100.

[0113] In some embodiments, the size of the first segment 321 is equal to the size of the second electrode 213 along the length direction of the sub-cell 21 (e.g., along the Y-axis). Specifically, in the parallel battery pack 20 and bypass structure 30, the size of the first segment 321 is equal to the size of the second electrode 213 of the first sub-cell 21a along the Y-axis. Since the second electrode 213 has a large dimension along the length of the sub-cell 21 (e.g., the dimension of the second electrode 213 in the Y-axis direction), the current transmission efficiency in the second electrode 213 is lower than that in the first segment 321. This design ensures that the current can be transmitted along the thickness direction of the sub-cell 21 between the first segment 321 and the end of the second electrode 213 along the length of the sub-cell 21 (e.g., the end of the second electrode 213 in the Y-axis direction). This avoids the situation where the current needs to be transmitted between the first segment 321 and the end of the second electrode 213 along the length of the sub-cell 21 (e.g., the end of the second electrode 213 in the Y-axis direction), which is beneficial to improving the current carrying efficiency between the second electrode 213 and the first segment 321 and reducing the power loss of the thin-film photovoltaic module 100.

[0114] In some embodiments, the projected area of ​​the first segment 321 along the thickness direction (e.g., the Z-axis direction) of the sub-cell 21 is smaller than the projected area of ​​the second electrode 213 along the thickness direction of the sub-cell 21. Specifically, in the X-axis direction, the size of the first segment 321 is smaller than the size of the second electrode 213. This reduces the material used in manufacturing the first segment 321, reduces the material used in manufacturing the first conductive element 32, and reduces the processing cost of the bypass structure 30 and the thin-film photovoltaic module 100.

[0115] It should be noted that the structure of the second conductive element 33 is similar to that of the first conductive element 32. The structure of the second conductive element 33 can be referred to the relevant description of the first conductive element 32, and will not be repeated here. The second conductive element 33 may include a third segment 331 and a fourth segment 334, with the fourth segment 334 disposed between the third segment 331 and the diode 31. In the first bypass structure 30a, the third segment 331 of the second conductive element 33 is stacked with the second electrode 213 of the first sub-cell 21a of the third battery pack 20c and faces away from the substrate 10.

[0116] In some embodiments, along the thickness direction (e.g., the Z-axis direction) of the diode 31, the first conductive element 32 is partially disposed on one side of the first semiconductor 311, and the second conductive element 33 is partially disposed on one side of the second semiconductor 312. This is beneficial for increasing the contact area between the first conductive element 32 and the first semiconductor 311, and the contact area between the second conductive element 33 and the second semiconductor 312, thereby improving the current-carrying efficiency between the first conductive element 32 and the second conductive element 33 and the diode 31, and reducing the power loss of the thin-film photovoltaic module 100. Specifically, along the X-axis direction, the first conductive element 32 is located on the side of the first semiconductor 311 facing away from the second semiconductor 312, and the second conductive element 33 is located on the side of the second semiconductor 312 facing away from the first semiconductor 311. In other embodiments, the bypass structure 30 may also be disposed on one side of the battery pack 20 along the Y-axis direction, and the thickness direction of the diode 31 may be the Y-axis direction.

[0117] In some embodiments, the first conductive element 32 is partially disposed on the side of the first semiconductor 311 facing away from the insulating layer 34, and the second conductive element 33 is partially disposed on the side of the second semiconductor 312 facing away from the insulating layer 34. Specifically, the second segment 322 is partially disposed on the side of the first semiconductor 311 facing away from the insulating layer 34, and the fourth segment 332 is partially disposed on the side of the second semiconductor 312 facing away from the insulating layer 34.

[0118] exist Figure 2 , Figure 7 and Figure 8 In the illustrated embodiment, the second segment 322 includes a first sub-segment 3221 and a second sub-segment 3222. In the X-axis direction, the second sub-segment 3222 is fixedly connected to the first sub-segment 3221. In the Z-axis direction, the first sub-segment 3221 is stacked with the insulating layer 34 and the first segment 321, facing away from the substrate 10. In the X-axis direction, the first sub-segment 3221 is located on the side of the first semiconductor 311 facing away from the second semiconductor 312 and is fixedly connected to the first semiconductor 311. The projection of the first sub-segment 3221 along the Z-axis direction overlaps with the projection of the first semiconductor 311 along the Z-axis direction. In the Z-axis direction, the first sub-segment 3221 and the first semiconductor 311 are misaligned. In the Z-axis direction, the second sub-segment 3222 is stacked with the first semiconductor 311, facing away from the insulating layer 34.

[0119] The design of the first conductive element 32 being partially disposed on the side of the first semiconductor 311 facing away from the insulating layer 34 is beneficial for increasing the size of the portion of the first conductive element 32 that is misaligned with the first semiconductor 311 in the thickness direction of the diode 31 (e.g., the first sub-segment 3221) in the thickness direction of the diode 31 (e.g., the Z-axis direction). This is beneficial for improving the current-carrying efficiency of the first conductive element 32 and reducing the power loss of the thin-film photovoltaic module 100. The cooperation relationship between the second conductive element 33 and the second semiconductor 312 can be referred to the relevant description of the first conductive element 32 and the first semiconductor 311, and will not be repeated here.

[0120] Please see Figure 10 and combined Figure 4 , Figure 10 This is a partial structural schematic diagram of another thin-film photovoltaic module 100 provided in the embodiments of this application.

[0121] like Figure 4 and Figure 10 As shown, Figure 10 The illustrated embodiments and Figure 4 The structures of the illustrated embodiments are similar, but the differences lie in the cooperation relationship between the first semiconductor 311 and the first conductive element 32, and the cooperation relationship between the second semiconductor 312 and the second conductive element 33. Figure 10 In the illustrated embodiment, in the Z-axis direction, both the first semiconductor 311 and the second semiconductor 312 are in contact with and fixedly connected to the side of the insulating layer 34 facing away from the substrate 10. A first conductive element 32 is partially disposed between the first semiconductor 311 and the insulating layer 34. Specifically, in the Z-axis direction, a second segment 322 is partially disposed between the first semiconductor 311 and the insulating layer 34. The first sub-segment 3221 is stacked with the insulating layer 34 and the first segment 321, facing away from the substrate 10, while the second sub-segment 3222 is stacked between the first semiconductor 311 and the insulating layer 34. The projection of the first sub-segment 3221 along the Z-axis direction is spaced apart from the projection of the first semiconductor 311 along the Z-axis direction. In the Z-axis direction, the first sub-segment 3221 and the first semiconductor 311 are misaligned.

[0122] The design of the first conductive element 32 being partially disposed between the first semiconductor 311 and the insulating layer 34 helps to reduce the size of the portion of the first conductive element 32 that is misaligned with the first semiconductor 311 in the thickness direction of the diode 31 (e.g., the first sub-segment 3221) in the thickness direction of the diode 31 (e.g., the Z-axis direction). This helps to reduce the material used in manufacturing the first conductive element 32 and, consequently, the processing cost of the bypass structure 30 and the thin-film photovoltaic module 100. The second conductive element 33 is partially disposed between the second semiconductor 312 and the insulating layer 34. For details, please refer to the relevant description of the first conductive element 32; further elaboration is omitted here.

[0123] Understandable. Figure 10In the illustrated embodiment, the design of the first conductive element 32 being partially disposed between the first semiconductor 311 and the insulating layer 34, and the design of the second conductive element 33 being partially disposed between the second semiconductor 312 and the insulating layer 34, can be applied to... Figures 1-9 In any of the embodiments shown.

[0124] Please see Figure 11 and Figure 12 and combined Figure 4 , Figure 11 This is a partial structural schematic diagram of another thin-film photovoltaic module 100 provided in the embodiments of this application. Figure 12 This is a partial structural schematic diagram of another thin-film photovoltaic module 100 provided in the embodiments of this application.

[0125] like Figure 4 and Figure 11 As shown, Figure 11 The illustrated embodiments and Figure 4 The structures of the illustrated embodiments are similar, but the differences lie in the different mating relationships between the first semiconductor 311 and the second semiconductor 312, the different mating relationships between the first semiconductor 311 and the first conductive element 32, and the different mating relationships between the second semiconductor 312 and the second conductive element 33. Figure 11 In the illustrated embodiment, the projection of the first semiconductor 311 along the thickness direction (e.g., the Z-axis direction) of the diode 31 at least partially overlaps with the projection of the second semiconductor 312 along the thickness direction of the diode 31. This is beneficial for increasing the contact area between the first semiconductor 311 and the second semiconductor 312, improving the current-carrying efficiency between the first semiconductor 311 and the second semiconductor 312, improving the current-carrying efficiency of the bypass structure 30, and reducing the power loss of the thin-film photovoltaic module 100.

[0126] Specifically, in the Z-axis direction, the second semiconductor 312 is contacted and fixedly connected to the side of the insulating layer 34 facing away from the substrate 10, and the first semiconductor 311 and the second semiconductor 312 are stacked and facing away from the insulating layer 34. The projection of the first semiconductor 311 along the Z-axis direction completely overlaps with the projection of the second semiconductor 312 along the thickness direction of the diode 31.

[0127] exist Figure 11In the illustrated embodiment, the first conductive element 32 is partially disposed on the side of the first semiconductor 311 facing away from the second semiconductor 312, and partially stacked with the insulating layer 34 facing away from the substrate 10. Specifically, in the Z-axis direction, a portion of the second segment 322 is stacked on the side of the first semiconductor 311 facing away from the second semiconductor 312. In the X-axis direction, another portion of the second segment 322 is disposed on one side of the first semiconductor 311 and the second semiconductor 312. In the Z-axis direction, yet another portion of the second segment 322 is stacked with the insulating layer 34 and the first segment 321, facing away from the substrate 10. The second conductive element 33 is partially disposed between the second semiconductor 312 and the insulating layer 34, and partially stacked with the insulating layer 34, facing away from the substrate 10. This ensures a large contact area between the first conductive element 32 and the first semiconductor 311, as well as between the second conductive element 33 and the second semiconductor 312. This is beneficial for improving the current-carrying efficiency between the first conductive element 32 and the second conductive element 33 and the diode 31, improving the current-carrying efficiency of the bypass structure 30, and reducing the power loss of the thin-film photovoltaic module 100.

[0128] like Figure 11 and Figure 12 As shown, Figure 12 The illustrated embodiments and Figure 11 The structures of the illustrated embodiments are similar, the difference being that the mating relationship between the first semiconductor 311 and the second semiconductor 312 is different. Figure 12 In the illustrated embodiment, the first semiconductor 311 includes a first sub-part 3111 and a second sub-part 3112. In the Z-axis direction, the second sub-part 3112 is disposed on one side of the first sub-part 3111. In the Z-axis direction, the first sub-part 3111 and the second semiconductor 312 are stacked and face away from the insulating layer 34. Furthermore, in the X-axis direction, the second sub-part 3112 is disposed between the second semiconductor 312 and the second segment 322 (i.e., the first conductive element 32). This ensures that current can only flow along the path of the first conductive element 32, the first semiconductor 311, the second semiconductor 312, and the second conductive element 33, which is beneficial for improving current-carrying efficiency.

[0129] Understandable, Figure 11 and Figure 12 In the illustrated embodiment, the design in which the projection of the first semiconductor 311 along the thickness direction of the diode 31 at least partially overlaps with the projection of the second semiconductor 312 along the thickness direction of the diode 31 can be applied to... Figures 1-10 In any of the embodiments shown.

[0130] Please see Figure 13 and combined Figure 3 , Figure 13 This is a schematic diagram of another thin-film photovoltaic module 100 provided in the embodiments of this application.

[0131] like Figure 3 and Figure 13 As shown, Figure 13 The illustrated embodiments and Figure 3 The structures of the illustrated embodiments are similar, the difference being that the insulating element 216 can be omitted. Figure 13 In the illustrated embodiment, the insulating element 216 is omitted. The projection of the spacer slot 215 along the Z-axis overlaps with the projection of the insulating layer 34 along the Z-axis. The first conductive element 32, the second conductive element 33, and the diode 31 can form a modular bypass structure 30 through the insulating layer 34. The bypass structure 30 is then assembled with the battery pack 20 to achieve parallel connection between the bypass structure 30 and the battery pack 20. Thus, the connection between the bypass structure 30 and the battery pack 20 can be achieved simply by connecting the first conductive element 32 and the second conductive element 33 to the battery pack 20, which reduces the difficulty of assembling the bypass structure 30 and the battery pack 20 and improves the processing efficiency of the thin-film photovoltaic module 100. In other embodiments, the insulating layer 34 can also be provided on the battery pack 20, and the diode 31, the first conductive element 32, and the second conductive element 33 can be provided on the side of the insulating layer 34 facing away from the battery pack 20. This also achieves parallel connection between the bypass structure 30 and the battery pack 20. Various processes exist for setting the bypass structure 30 on the battery pack 20.

[0132] Understandable. Figure 13 The design omitting the insulating element 216 in the illustrated embodiment can be applied to... Figures 1-12 In any of the embodiments shown.

[0133] Please see Figure 14 and combined Figure 1 and Figure 6 , Figure 14 This is a three-dimensional structural schematic diagram of another thin-film photovoltaic module 100 provided in the embodiments of this application.

[0134] like Figure 6 and Figure 14 As shown, Figure 14 The illustrated embodiments and Figure 6 The embodiments shown are structurally similar, differing only in the number of battery packs 20 and the number of bypass structures 30. Figure 14 In the illustrated embodiment, the number of battery packs 20 and the number of bypass structures 30 are both one. The battery pack 20 includes multiple sub-cells 21, which include a first sub-cell 21a, a second sub-cell 21b, and multiple third sub-cells 21c. The bypass structure 30 is electrically connected to the second electrode 213 of the first sub-cell 21a and the second sub-electrode 2112 of the second sub-cell 21b.

[0135] Specifically, the battery pack 20 also includes a first connecting sub-battery 22a and a second connecting sub-battery 22b. The first connecting sub-battery 22a is connected in series with the first sub-battery 21a, and the second connecting sub-battery 22b is connected in series with the second sub-battery 21b. The bypass structure 30 is in contact with the second connecting electrode 223 of the first connecting sub-battery 22a and the second connecting electrode 223 of the second connecting sub-battery 22b. Specifically, the first segment 321 of the first conductive element 32 is stacked with the second connecting electrode 223 of the first connecting sub-battery 22a and faces away from the substrate 10, and the third segment 331 of the second conductive element 33 is stacked with the second connecting electrode 223 of the second connecting sub-battery 22b and faces away from the substrate 10. Thus, the first conductive element 32 (i.e., the bypass structure 30) is electrically connected to the second electrode 213 of the first sub-battery 21a through the first connecting sub-battery 22a, and the second conductive element 33 (i.e., the bypass structure 30) is electrically connected to the second sub-electrode 2112 of the second sub-battery 21b through the second connecting sub-battery 22b.

[0136] When the sub-cells 21 and / or the first connected sub-cells 22a in the thin-film photovoltaic module 100 are shaded, the bypass structure 30 can be turned on to provide reverse bias protection for the multiple sub-cells 21 and the first connected sub-cells 22a, while also preventing the thin-film photovoltaic module 100 from interfering with the power generation equipment 1000 (such as...). Figure 1 The operation of other thin-film photovoltaic modules 100 (shown) helps reduce power loss in the power generation equipment 1000. In some other embodiments, the first connecting sub-cell 22a and the second connecting sub-cell 22b may also be omitted. The bypass structure 30 may contact and be electrically connected to the second electrode 213 of the first sub-cell 21a and the second sub-electrode 2112 of the second sub-cell 21b.

[0137] Understandable. Figure 14 In the embodiment shown, the battery pack 20 and the bypass structure 30 are both designed to be one unit each, which can be applied to... Figures 1-13 In any of the embodiments shown.

[0138] Please see Figure 15 and combined Figure 6 , Figure 15 This is a schematic diagram of another thin-film photovoltaic module 100 provided in the embodiments of this application.

[0139] like Figure 6 and Figure 15 As shown, Figure 15 The illustrated embodiments and Figure 6 The embodiments shown are similar in structure, but differ in the number of diodes 31, the number of insulating layers 34, the structure of the first conductive element 32, and the structure of the second conductive element 33 in the bypass structure 30. Figure 15In the illustrated embodiment, the bypass structure 30 contains multiple diodes 31 and multiple insulating layers 34. For example, there are three diodes 31 and three insulating layers 34. The multiple insulating layers 34 are arranged at intervals along the Y-axis. Each diode 31 is disposed on one insulating layer 34. The arrangement of the diodes 31 and the insulating layers 34 can be referred to... Figure 6 The relevant descriptions of the embodiments shown will not be repeated.

[0140] The first conductive element 32 includes a first segment 321 and a plurality of second segments 322, each second segment 322 being disposed between the first segment 321 and a diode 31. In the Y-axis direction, the plurality of second segments 322 are arranged sequentially at intervals. Each second segment 322 is partially disposed between a diode 31 and partially disposed between an insulating layer 34 and the first segment 321. The connection method between the first segment 321, the second segment 322, the diode 31, and the insulating layer 34 can be referred to... Figure 6 The relevant descriptions of the illustrated embodiment will not be repeated here. The second conductive element 33 includes a third segment 331 and a plurality of fourth segments 332, each fourth segment 332 being connected between the third segment 331 and a diode 31. In the Y-axis direction, the plurality of fourth segments 332 are arranged sequentially at intervals. For details, please refer to the relevant descriptions of the first conductive element 32, which will not be repeated here.

[0141] In this way, the current flowing into the bypass structure 30 can be shunted by multiple diodes 31, which helps to improve the current carrying efficiency of the bypass structure 30. In some other embodiments, multiple insulating layers 34 can also be fixedly connected in sequence in the Y-axis direction. That is, the number of insulating layers 34 can also be one.

[0142] Understandable. Figure 15 In the illustrated embodiment, the design of having multiple diodes 31, the design of the first conductive element 32, and the design of the second conductive element 33 can be applied to... Figures 1-14 In any of the embodiments shown.

[0143] Please see Figure 16 and combined Figure 6 , Figure 16 This is a partial structural schematic diagram of another thin-film photovoltaic module 100 provided in an embodiment of this application. It should be noted that... Figure 16 The blank space between the two dashed lines represents the omitted part of the thin-film photovoltaic module 100.

[0144] like Figure 6 and Figure 16 As shown, Figure 16 The illustrated embodiments and Figure 6The embodiments shown are similar in structure, differing only in the arrangement of the diode 31, the structure of the first conductive element 32, and the structure of the second conductive element 33 in the bypass structure 30. Figure 16 In the illustrated embodiment, the parallel connection of the first bypass structure 30a and the first battery pack 20a is used as an example. In the first bypass structure 30a, in the Z-axis direction, the diode 31 is disposed on the side of the substrate 10 facing the first battery pack 20a. Specifically, the diode 31 is stacked with the substrate 10. The diode 31 is spaced apart from the first battery pack 20a. Specifically, in the Y-axis direction, the diode 31 is located on one side of the first battery pack 20a and spaced apart from the first battery pack 20a. The first conductive element 32 includes a first segment 321 and a second segment 322. The second segment 322 is disposed between the first segment 321 and the first semiconductor 311 of the diode 31. The second segment 322 is disposed at the end of the first segment 321 in the Y-axis direction. The second conductive element 33 includes a third segment 331 and a fourth segment 332. The fourth segment 332 is disposed between the third segment 331 and the second semiconductor 312 of the diode 31. The fourth segment 332 is disposed at the end of the third segment 331 in the Y-axis direction.

[0145] In the parallel first bypass structure 30a and the first battery pack 20a, the first segment 321 is stacked with the second electrode 213 of the first sub-cell 21a of the first battery pack 20a and faces away from the substrate 10, and the fourth segment 332 is stacked with the second electrode 213 of the first sub-cell 21a of the third battery pack 20c and faces away from the substrate 10. Thus, the first bypass structure 30a and the first battery pack 20a are connected in parallel. It can be understood that the insulating layer 34 can be omitted. The arrangement of the diode 31 is varied and can be designed according to requirements.

[0146] exist Figure 16 In the illustrated embodiment, the first bypass structure 30a contains multiple diodes 31, multiple second segments 322, and multiple fourth segments 332. Specifically, there are two diodes 31, two second segments 322, and two fourth segments 332. In the Y-axis direction, the two diodes 31 are located on opposite sides of the first battery pack 20a. Each diode 31 is connected to the first segment 321 via a second segment 322 and to the third segment 331 via a fourth segment 332.

[0147] This avoids the current flowing from one end of the first segment 321 (or the third segment 331) to the other end of the first segment 321 (or the third segment 331) and then to the diode 31. This helps to shorten the path of current flowing from the first segment 321 (or the third segment 331) to the diode 31, improves the current carrying efficiency of the bypass structure 30, and reduces the power loss of the thin-film photovoltaic module 100.

[0148] Understandable. Figure 16 In the illustrated embodiment, the design of the diode 31 being disposed on the substrate 10 can be applied to... Figures 1-15 In any of the embodiments shown.

[0149] Please see Figure 17 and combined Figure 6 , Figure 17 This is a partial structural schematic diagram of another thin-film photovoltaic module 100 provided in an embodiment of this application. It should be noted that... Figure 17 The blank space between the two dashed lines represents the omitted part of the thin-film photovoltaic module 100.

[0150] like Figure 6 and Figure 17 As shown, Figure 17 The illustrated embodiments and Figure 6 The embodiments shown are structurally similar, differing only in the number of photovoltaic modules 101, the structure of the battery pack 20, and the configuration of the bypass structure 30. Figure 17 In the illustrated embodiment, there are multiple photovoltaic modules 101. For example, there are two photovoltaic modules 101. The multiple photovoltaic modules 101 are arranged sequentially at intervals along the Z-axis. These multiple photovoltaic modules 101 can be connected in parallel. Each photovoltaic module 101 contains multiple battery packs 20 and multiple bypass structures 30. The multiple battery packs 20 include a first battery pack 20a, a second battery pack 20b, and a third battery pack 20c. The multiple bypass structures 30 include a first bypass structure 30a, a second bypass structure 30b, and a third bypass structure 30c. The first bypass structure 30a is connected in parallel with the first battery pack 20a, the second bypass structure 30b is connected in parallel with the second battery pack 20b, and the third bypass structure 30c is connected in parallel with the third battery pack 20c.

[0151] exist Figure 17 In the illustrated embodiment, the battery pack 20 includes a first sub-battery pack 201 and a second sub-battery pack 202. The first sub-battery pack 201 and the second sub-battery pack 202 are spaced apart in the Y-axis direction. The first sub-battery pack 201 and the second sub-battery pack 202 are connected in parallel via, but not limited to, cables or busbars. Both the first sub-battery pack 201 and the second sub-battery pack 202 include multiple sub-batteries 21 connected in series. In two adjacent battery packs 20, the second sub-battery 21b of the first sub-battery pack 201 of one battery pack 20 is connected in series with the first sub-battery 21a of the first sub-battery pack 201 of the other battery pack 20, and the second sub-battery 21b of the second sub-battery pack 202 of one battery pack 20 is connected in series with the first sub-battery 21a of the second sub-battery pack 202 of the other battery pack 20. The above series connections can be referred to... Figure 6 The relevant descriptions of the embodiments shown will not be repeated.

[0152] In the parallel battery pack 20 and bypass structure 30, the bypass structure 30 is connected in parallel with the first sub-battery pack 201 and the second sub-battery pack 202. When the photocurrent generated by one of the sub-cells 21 in the first sub-battery pack 201 and / or the second sub-battery pack 202 is less than the target current I1, the bypass structure 30 is turned on. A specific explanation is given using the parallel connection of the first bypass structure 30a and the first battery pack 20a as an example. The first bypass structure 30a (i.e., bypass structure 30) includes a diode 31, a first conductive element 32, and a second conductive element 33. It is understood that the insulating layer 34 can be omitted. The first conductive element 32 includes a first segment 321 and a second segment 322, and the second conductive element 33 includes a third segment 331 and a fourth segment 332. The diode 31 is connected to the first segment 321 through the second segment 322 and to the third segment 331 through the fourth segment 332.

[0153] In the Y-axis direction, diode 31 is disposed between the first sub-cell group 201 and the second sub-cell group 202. In the first bypass structure 30a and the first cell group 20a, the first segment 321 is stacked with the second electrode 213 of the first sub-cell 21a of the first sub-cell group 201 and faces away from the substrate 10, and is also stacked with the second electrode 213 of the first sub-cell 21a of the second sub-cell group 202 and faces away from the substrate 10. In the first bypass structure 30a and the third cell group 20c, the third segment 331 is stacked with the second electrode 213 of the first sub-cell 21a of the first sub-cell group 201 and faces away from the substrate 10, and is also stacked with the second electrode 213 of the first sub-cell 21a of the second sub-cell group 202 and faces away from the substrate 10. Thus, the first bypass structure 30a is connected in parallel with the first sub-cell group 201 and the second sub-cell group 202 of the first cell group 20a.

[0154] In the parallel first bypass structure 30a and the first battery pack 20a, when one of the sub-cells 21 in the first sub-battery pack 201 and / or the second sub-battery pack 202 is blocked, the diode 31 conducts, and the first bypass structure 30a conducts. At this time, both the first sub-battery pack 201 and the second sub-battery pack 202 can be bypassed by the first bypass structure 30a, achieving reverse bias protection for multiple sub-cells 21 in the first sub-battery pack 201 and multiple sub-cells 21 in the second sub-battery pack 202.

[0155] exist Figure 17In the illustrated embodiment, in the parallel bypass structure 30 and battery pack 20, both the first sub-battery pack 201 and the second sub-battery pack 202 can output photocurrent. The photocurrent output by battery pack 20 is the combined photocurrent output by the first sub-battery pack 201 and the second sub-battery pack 202. The structure of battery pack 20 can vary and can be designed according to requirements. Moreover, when the bypass structure 30 is turned on, it can provide reverse bias protection for multiple sub-cells 21 of the first sub-battery pack 201 and multiple sub-cells 21 of the second sub-battery pack 202, which helps reduce the failure rate of the thin-film photovoltaic module 100 and improve its operational reliability. In addition, a single bypass structure 30 can provide reverse bias protection for more sub-cells 21, which helps improve the utilization rate of the bypass structure 30 and reduce the processing cost of the thin-film photovoltaic module 100.

[0156] Understandable, Figure 17 In the illustrated embodiment, the photovoltaic module 101 is designed to be multiple, and the battery pack 20, including the first sub-battery pack 201 and the second sub-battery pack 202, and the bypass structure 30, can be applied to... Figures 1-16 In any of the embodiments shown.

[0157] Please see Figure 18 and combined Figure 6 and Figure 17 , Figure 18 This is a partial structural schematic diagram of another thin-film photovoltaic module 100 provided in an embodiment of this application. It should be noted that... Figure 18 The blank space between the two dashed lines represents the omitted part of the thin-film photovoltaic module 100.

[0158] like Figure 17 and Figure 18 As shown, Figure 18 The illustrated embodiments and Figure 17 The embodiments shown are structurally similar, differing only in the number of photovoltaic modules 101 and the structure of the bypass structure 30. Figure 18 In the illustrated embodiment, there is one photovoltaic module 101. The bypass structure 30 is specifically described using the parallel connection of the first bypass structure 30a and the first battery pack 20a as an example. The first bypass structure 30a includes a diode 31, a first conductive element 32, a second conductive element 33, and an insulating layer 34. In the X-axis direction, the first conductive element 32, the diode 31, and the second conductive element 33 are arranged sequentially. All three elements are connected to the insulating layer 34.

[0159] The number of diodes 31 and insulating layers 34 are both multiple; for example, there are two diodes 31 and two insulating layers 34. Each diode 31 includes a first diode 31a and a second diode 31b. In the Y-axis direction, the first diode 31a and the second diode 31b are spaced apart. In the Z-axis direction, the first diode 31a is disposed on one side of the first sub-cell group 201 and faces away from the substrate 10, and the second diode 31b is disposed on one side of the second sub-cell group 202 and faces away from the substrate 10. One insulating layer 34 is disposed between the first diode 31a and the first sub-cell group 201, and another insulating layer 34 is disposed between the second diode 31b and the second sub-cell group 202.

[0160] The first conductive element 32 includes a first segment 321 and a plurality of second segments 322. The first diode 31a and the second diode 31b are each connected to the first segment 321 through one second segment 322. The second conductive element 33 includes a third segment 331 and a plurality of fourth segments 332. The first diode 31a and the second diode 31b are each connected to the third segment 331 through one fourth segment 332. In the first bypass structure 30a and the first battery pack 20a, the first segment 321 is stacked with the second electrode 213 of the first sub-battery 21a of the first sub-battery pack 201 and faces away from the substrate 10, and is also stacked with the second electrode 213 of the first sub-battery 21a of the second sub-battery pack 202 and faces away from the substrate 10. In the first bypass structure 30a and the third battery pack 20c, the third segment 331 is stacked with the second electrode 213 of the first sub-cell 21a of the first sub-cell pack 201 and faces away from the substrate 10, and is also stacked with the second electrode 213 of the first sub-cell 21a of the second sub-cell pack 202 and faces away from the substrate 10. Thus, the first bypass structure 30a can also be connected in parallel with the first sub-cell pack 201 and the second sub-cell pack 202 of the first battery pack 20a.

[0161] In the parallel connection of the first bypass structure 30a and the first battery pack 20a, when one of the sub-cells 21 in the first sub-battery pack 201 and / or the second sub-battery pack 202 is blocked, the first diode 31a and the second diode 31b can conduct, and the first bypass structure 30a conducts. At this time, both the first sub-battery pack 201 and the second sub-battery pack 202 can be bypassed by the first bypass structure 30, achieving reverse bias protection for multiple sub-cells 21 in the first sub-battery pack 201 and multiple sub-cells 21 in the second sub-battery pack 202. The bypass structure 30 can be connected in parallel with the first sub-battery pack 201 and the second sub-battery pack 202 in various ways, and can be designed according to requirements.

[0162] Understandable, Figure 18 In the illustrated embodiment, the design of the battery pack 20, including the first sub-battery pack 201 and the second sub-battery pack 202, and the design of the bypass structure 30 can be applied to... Figures 1-17 In any of the embodiments shown.

[0163] In the above embodiments, thin-film photovoltaic modules are directly applied to power generation equipment. Thin-film photovoltaic modules can also be applied to tandem photovoltaic modules, which are then applied to power generation equipment. Next, using... Figure 19 and Figure 20 The illustrated embodiment will be used as an example for explanation.

[0164] Please see Figure 19 , Figure 20 and Figure 21 and combined Figure 1 and Figure 2 , Figure 19 This is a structural block diagram of another power generation device 1000 provided in this application embodiment under an application scenario. Figure 20 yes Figure 19 The diagram shows the structure of the stacked photovoltaic module 1 of the power generation equipment 1000. Figure 21 yes Figure 19 A schematic diagram of the electrical principle of the tandem photovoltaic module 1 of the power generation device 1000 shown.

[0165] like Figure 19 , Figure 20 and Figure 21 As shown, the thin-film photovoltaic module 100 can be applied to the tandem photovoltaic module 1, and the tandem photovoltaic module 1 is applied to the power generation equipment 1000. The power generation equipment 1000 can supply power to the grid 3000 through the power conversion equipment 2000. The application scenarios of the power generation equipment 1000 can be referred to... Figure 1 The following is a description of the embodiment shown. The power generation equipment 1000 includes multiple tandem photovoltaic modules 1, which are connected in series.

[0166] The tandem photovoltaic module 1 may include a thin-film photovoltaic module 100, a voltage conversion module 200, and a photovoltaic module 300, wherein the thin-film photovoltaic module 100 and the photovoltaic module 300 are stacked together. Specifically, an insulator 400 is provided between the thin-film photovoltaic module 100 and the photovoltaic module 300, and the insulator 400 is stacked between the thin-film photovoltaic module 100 and the photovoltaic module 300. The voltage conversion module 200 is used to convert the output voltage of the thin-film photovoltaic module 100 into a target voltage; and / or, the voltage conversion module 200 is used to convert the output voltage of the photovoltaic module 300 into a target voltage. The target voltage matches the operating voltage of the power conversion device 2000. In this way, the output voltage of the photovoltaic module 300 and the output voltage of the thin-film photovoltaic module 100 can be matched, ensuring that the output voltage of the tandem photovoltaic module 1 can match the voltage of the power conversion device 2000.

[0167] exist Figure 19 , Figure 20 and Figure 21 In the illustrated embodiment, the structure of the thin-film photovoltaic module 100 can be referred to Figures 2-18 The relevant descriptions in any of the illustrated embodiments will not be repeated. The thin-film photovoltaic module 100 includes a battery pack 20 and a bypass structure 30. The battery pack 20 includes a plurality of sub-cells 21 connected in series. The photovoltaic module 300 may include a solar cell array 301 and a bypass diode 302. The solar cell array 301 includes a plurality of solar cells 3011 connected in series, and the bypass diode 302 is connected in parallel with the solar cell array 301. The number of solar cell arrays 301 and bypass diodes 302 can be multiple, with multiple solar cell arrays 301 connected in series. Each bypass diode 302 is connected in parallel with one solar cell array 301. The solar cells 3011 may be, but are not limited to, thin-film cells or crystalline silicon cells.

[0168] In the parallel-connected solar cell array 301 and bypass diode 302, when one of the solar cells 3011 is shaded, the bypass diode 302 can conduct to achieve reverse bias protection for multiple solar cells 3011 in the solar cell array 301. For details, please refer to... Figures 2-18 Description of the bypass structure 30 in any of the illustrated embodiments.

[0169] The voltage conversion module 200 may include a first voltage conversion module 200a and a second voltage conversion module 200b. The input terminal of the first voltage conversion module 200a is connected in parallel with the thin-film photovoltaic module 100. The input terminal of the second voltage conversion module 200b is connected in parallel with the photovoltaic module 300. The output terminals of the first voltage conversion module 200a and the second voltage conversion module 200b are connected in parallel. The first voltage conversion module 200a is used to convert the output voltage of the thin-film photovoltaic module 100 into a target voltage. The second voltage conversion module 200b is used to convert the output voltage of the photovoltaic module 300 into a target voltage. In some other embodiments, the first voltage conversion module 200a or the second voltage conversion module 200b may be omitted. The design of the voltage conversion module 200 is diverse.

Claims

1. A thin-film photovoltaic module, characterized in that, The thin-film photovoltaic module includes a substrate, a battery pack and a bypass structure. The battery pack is disposed on the substrate and includes multiple sub-cells connected in series. The sub-cells located at both ends of the battery pack are the first sub-cell and the second sub-cell, respectively. The sub-cell includes a first electrode, a cell layer, and a second electrode stacked sequentially. The first electrode is in contact with the substrate and includes a first sub-electrode and a second sub-electrode spaced apart. The cell layer is also provided with a conductive channel, and the second electrode fills the conductive channel and is in contact with the first sub-electrode. The bypass structure is used to connect in parallel with the battery pack. In the parallel connection of the bypass structure and the battery pack, the bypass structure is electrically connected to the second electrode of the first sub-cell and the second sub-electrode of the second sub-cell. When the photocurrent generated by one sub-cell in the battery pack is less than the target current, the bypass structure is turned on.

2. The thin-film photovoltaic module according to claim 1, characterized in that, The bypass structure includes at least one diode, a first conductive element, and a second conductive element. The diode includes a first semiconductor and a second semiconductor in contact. The first conductive element is in contact with the first semiconductor, and the second conductive element is in contact with the second semiconductor. The first conductive element and the second conductive element are spaced apart. In the parallel bypass structure and the battery pack, the first conductive element is electrically connected to the second electrode of the first sub-cell, and the second conductive element is electrically connected to the second sub-electrode of the second sub-cell.

3. The thin-film photovoltaic module according to claim 2, characterized in that, The plurality of sub-cells are arranged sequentially along the width direction of the sub-cells, and in two adjacent sub-cells, the first sub-electrode of one sub-cell is in contact with the second sub-electrode of the other sub-cell.

4. The thin-film photovoltaic module according to claim 3, characterized in that, In the parallel bypass structure and the battery pack, the diode is located in the middle of the sub-cell along the length of the sub-cell.

5. The thin-film photovoltaic module according to any one of claims 2-4, characterized in that, The diode is disposed on the side of the battery pack facing away from the substrate, and the size of the diode is smaller than the size of the sub-cell in the length direction of the sub-cell.

6. The thin-film photovoltaic module according to any one of claims 2-5, characterized in that, The first conductive element includes a first segment. In the parallel bypass structure and the battery pack, in the thickness direction of the sub-cell, the first segment is stacked with the second electrode of the first sub-cell and faces away from the substrate. The dimension of the first segment in the thickness direction of the sub-cell is larger than the dimension of the second electrode in the thickness direction of the sub-cell.

7. The thin-film photovoltaic module according to claim 6, characterized in that, Along the length of the sub-cell, the dimensions of the first segment are equal to the dimensions of the second electrode.

8. The thin-film photovoltaic module according to claim 6 or 7, characterized in that, The area of ​​the first segment projected along the thickness direction of the sub-cell is smaller than the area of ​​the second electrode projected along the thickness direction of the sub-cell.

9. The thin-film photovoltaic module according to any one of claims 6-8, characterized in that, The first conductive element further includes a second segment disposed between the first segment and the first semiconductor. In the length direction of the sub-cell, the size of the second segment is smaller than the size of the diode.

10. The thin-film photovoltaic module according to any one of claims 2-9, characterized in that, The bypass structure includes an insulating layer disposed between the battery pack and the diode, and the first conductive element and the second conductive element are both at least partially disposed on the side of the insulating layer facing the diode.

11. The thin-film photovoltaic module according to claim 10, characterized in that, The projection of the diode along its thickness direction lies within the projection of the insulating layer along its thickness direction.

12. The thin-film photovoltaic module according to claim 10 or 11, characterized in that, In the thickness direction of the diode, the first conductive element portion is disposed on one side of the first semiconductor, and the second conductive element portion is disposed on one side of the second semiconductor.

13. The thin-film photovoltaic module according to claim 12, characterized in that, In a direction perpendicular to the thickness direction of the diode, the first semiconductor and the second semiconductor are arranged sequentially, and the first conductive element is disposed on the side of the first semiconductor facing away from the insulating layer; or, the first conductive element is disposed between the first semiconductor and the insulating layer.

14. The thin-film photovoltaic module according to claim 12, characterized in that, The projection of the first semiconductor along the thickness direction of the diode at least partially overlaps with the projection of the second semiconductor along the thickness direction of the diode.

15. The thin-film photovoltaic module according to any one of claims 1-14, characterized in that, The battery packs are multiple and connected in series. The second sub-cell of one battery pack is connected in series with the first sub-cell of another battery pack. In the two battery packs connected in series, the bypass structure is in contact with the second electrode of the first sub-cell of one battery pack and the second electrode of the first sub-cell of the other battery pack.

16. The thin-film photovoltaic module according to any one of claims 1-15, characterized in that, The battery pack includes a first sub-battery pack and a second sub-battery pack, the first sub-battery pack and the second sub-battery pack are connected in parallel, and both the first sub-battery pack and the second sub-battery pack include a plurality of sub-batteries connected in series. In the parallel battery pack and the bypass structure, the bypass structure is connected in parallel with the first sub-battery pack and the second sub-battery pack. When the photocurrent generated by one of the sub-batteries in the first sub-battery pack and / or the second sub-battery pack is less than the target current, the bypass structure is turned on.

17. A tandem photovoltaic module, characterized in that, The stacked photovoltaic module includes a thin-film photovoltaic module, a voltage conversion module, and a photovoltaic module as described in any one of claims 1-16, wherein the thin-film photovoltaic module is stacked with the photovoltaic module, and the voltage conversion module is used to convert the output voltage of the thin-film photovoltaic module into a target voltage; and / or, the voltage conversion module is used to convert the output voltage of the photovoltaic module into the target voltage.

18. A power generation device, characterized in that, The power generation device includes a plurality of thin-film photovoltaic modules as described in any one of claims 1-16, wherein the plurality of thin-film photovoltaic modules are connected in series; or, the power generation device includes a plurality of tandem photovoltaic modules as described in claim 17, wherein the plurality of tandem photovoltaic modules are connected in series.

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