Plasma processing system and replacement method of edge ring

Abstract

The invention provides a plasma processing system and an edge ring replacement method. The plasma processing system includes a plasma processing apparatus, a conveying apparatus, and a control apparatus. The control apparatus performs control so as to execute the following steps: a step of transferring a cover ring supporting an edge ring to a lifting member; a step of moving the jig supported by the support portion between the annular member placement surface and the cover ring; transferring the jig to another lifting member; a step of transferring the edge ring from the cover ring to the jig by moving the lifting member and the other lifting member relative to each other after the support portion is retracted; a step in which only the lifting member is lowered and the cover ring is joined to the ring-shaped member placement surface; transferring the jig supporting the edge ring from the other lifting component to the supporting part; and a step of sending out the jig supporting the edge ring from the processing container. According to the present invention, replacement in a state of being supported by the cover ring and replacement of the edge ring unit can be selectively performed.

Description

[0001] This application is a divisional application of patent application filed on February 20, 2021, with application number 202110191972.3 and invention title "Plasma Processing System and Method for Replacing Edge Ring". Technical Field

[0002] This invention relates to a plasma processing system and a method for replacing the edge ring. Background Technology

[0003] Patent Document 1 discloses a substrate processing apparatus in which a substrate is placed in a processing chamber, and a focusing ring is arranged around the substrate to perform plasma processing. This substrate processing apparatus includes a stage and multiple positioning pins. The stage includes a support member having a substrate mounting surface for the substrate and a focusing ring mounting surface for the focusing ring. The positioning pins are made of a material that expands radially upon heating and are installed on the focusing ring, extending from its lower surface. They are inserted into positioning holes formed in the focusing ring mounting surface of the support member, expand radially upon heating, and engage, thereby positioning the focusing ring. Furthermore, the substrate processing apparatus disclosed in Patent Document 1 includes a lifting pin and a conveying arm. The lifting pin is positioned on the stage to extend from or retract into the focusing ring mounting surface, causing the focusing ring to rise together with the positioning pin and disengage from the focusing ring mounting surface. The conveying arm is located outside the processing chamber and, via an inlet / outlet provided in the processing chamber, replaces the focusing ring between the lifting pin and the focusing pin while maintaining the positioning pin in place.

[0004] Existing technical documents

[0005] Patent documents

[0006] Patent document 1: Japanese Patent Application Publication No. 2011-54933. Summary of the Invention

[0007] The problem that the invention aims to solve

[0008] The technology of the present invention allows for selective replacement of the edge ring while it is supported by the cover ring, and replacement of the edge ring unit itself, when replacing the edge ring in a plasma processing system using both the edge ring and the cover ring.

[0009] Technical means for solving problems

[0010] One aspect of the present invention includes: a plasma processing apparatus having a substrate support stage and a decompression-resistant processing container internally capable of housing the substrate support stage, the plasma processing apparatus performing plasma processing on a substrate on the substrate support stage; a conveying device having a support portion supporting the substrate, wherein the substrate is fed into or out of the processing container by inserting or withdrawing the support portion into the processing container; and a control device, wherein the substrate support stage has: a substrate mounting surface for mounting the substrate; and an annular component mounting surface for mounting the cover ring while the cover ring supports an edge ring, wherein... The edge ring is arranged to surround the substrate held on the substrate mounting surface, and the cover ring covers the outer surface of the edge ring; a lifting member is able to extend and lift from the portion of the annular member mounting surface that overlaps with the cover ring when viewed from above; a lifting mechanism is able to lift and lift the lifting member; other lifting members are able to extend and lift from the substrate mounting surface; and other lifting mechanisms are able to lift and lift the other lifting members. The support portion of the conveying device is configured to support the cover ring that supports the edge ring, and to support a portion having a larger diameter than the edge ring. A fixture for the longer inner diameter portion, wherein the control device controls the lifting mechanism, the conveying device, and the other lifting mechanisms to perform the following steps: raising the lifting component to transfer the cover ring supporting the edge ring from the annular component mounting surface to the lifting component; moving the fixture supported by the support portion between the substrate mounting surface and the annular component mounting surface and the cover ring supporting the edge ring; raising the other lifting components to transfer the fixture from the support portion to the other lifting components; and after the support portion retracts, raising the... The steps include: moving the lowering component and the other lifting components relative to each other to transfer the edge ring from the cover ring to the fixture; lowering only the lifting component to transfer the cover ring from the lifting component to the mounting surface of the annular component; moving the support portion between the cover ring and the fixture supporting the edge ring, then lowering the other lifting components to transfer the fixture supporting the edge ring from the other lifting components to the support portion; and withdrawing the support portion from the processing container to send the fixture supporting the edge ring out of the processing container.

[0011] Invention Effects

[0012] According to the present invention, when replacing the edge ring in a plasma processing system using both the edge ring and the cover ring, it is possible to selectively replace the edge ring while it is supported by the cover ring and to replace the edge ring unit itself. Attached Figure Description

[0013] Figure 1This is a schematic front view showing the structure of the plasma processing system of the reference embodiment 1.

[0014] Figure 2 It means Figure 1 A rough longitudinal sectional view of the structure of the processing component.

[0015] Figure 3 yes Figure 2 A magnified view of a portion of the image.

[0016] Figure 4 It is the circumferential direction of the wafer support stage. Figure 2 Partial sectional views of different sections.

[0017] Figure 5 This is a diagram schematically illustrating the state within the processing components during the installation process of the edge ring.

[0018] Figure 6 This is a diagram schematically illustrating the state within the processing components during the installation process of the edge ring.

[0019] Figure 7 This is a diagram schematically illustrating the state within the processing components during the installation process of the edge ring.

[0020] Figure 8 This is another example of a lifting pin.

[0021] Figure 9 This is another illustration of an electrostatic chuck.

[0022] Figure 10 This is a partial enlarged cross-sectional view showing the structure of the wafer support stage as a substrate support stage in the reference embodiment 2.

[0023] Figure 11 This is a partial enlarged cross-sectional view showing the structure of the wafer support stage as a substrate support stage in the reference embodiment 3.

[0024] Figure 12 This is a schematic front view showing the structure of the plasma processing system of this embodiment.

[0025] Figure 13 This is a partial enlarged cross-sectional view showing the general structure of the wafer support stage as a substrate support stage in this embodiment.

[0026] Figure 14 This is a partially enlarged cross-sectional view showing another example of a wafer support stage.

[0027] Figure 15 This is a partially enlarged cross-sectional view showing another example of a wafer support stage.

[0028] Figure 16 This is a schematic diagram illustrating the state of the processing components during the disassembly process of the edge ring unit.

[0029] Figure 17 This is a schematic diagram illustrating the state of the processing components during the disassembly process of the edge ring unit.

[0030] Figure 18 This is a schematic diagram illustrating the state of the processing components during the disassembly process of the edge ring unit.

[0031] Figure 19 This is a schematic diagram illustrating the state of the processing components during the disassembly process of the edge ring unit.

[0032] Figure 20 This is a schematic diagram illustrating the state of the processing components during the disassembly process of the edge ring unit.

[0033] Figure 21 This is a schematic diagram illustrating the state of the processing components during the disassembly process of the edge ring unit.

[0034] Figure 22 This is a schematic diagram illustrating the state of the processing assembly during the disassembly process of the cover ring supporting the edge ring.

[0035] Figure 23 This is a schematic diagram illustrating the state of the processing assembly during the disassembly process of the cover ring supporting the edge ring.

[0036] Figure 24 This is a schematic diagram illustrating the state of the processing assembly during the disassembly process of the cover ring supporting the edge ring.

[0037] Figure 25 This is a schematic diagram illustrating the state of the processing assembly during the disassembly process of the cover ring supporting the edge ring.

[0038] Figure 26 This is a schematic diagram illustrating the state of the processing assembly during the disassembly process of the cover ring supporting the edge ring.

[0039] Figure 27 This is a schematic diagram illustrating the state of the processing assembly during the disassembly process of the cover ring supporting the edge ring.

[0040] Explanation of reference numerals in the attached figures

[0041] 60 processing components

[0042] 70 Conveying device

[0043] 71 Conveyor Arm

[0044] 80 Control device

[0045] 100 plasma processing chamber

[0046] 104a upper surface

[0047] 106 Lifting Pin

[0048] 110 Lifting Mechanism

[0049] 114 Lifting Mechanism

[0050] 400 wafer support stage

[0051] 402a upper surface

[0052] 403a upper surface

[0053] 405 Lifting Components

[0054] Ca Covering Ring

[0055] Fa edge ring

[0056] J fixture

[0057] W chip Detailed Implementation

[0058] (Reference implementation method)

[0059] In the manufacturing processes of semiconductor devices, plasma treatments such as etching and film deposition are performed on substrates such as semiconductor wafers (hereinafter referred to as "wafers"). The plasma treatment is performed with the wafer held on a substrate support stage in a depressurized processing chamber.

[0060] Furthermore, during plasma processing, in order to obtain good and uniform processing results in the central and peripheral portions of the substrate, annular components called edge rings and focusing rings are sometimes arranged around the substrate on the substrate support platform. When using an edge ring, it is precisely positioned and configured to obtain circumferentially uniform processing results at the periphery of the substrate. For example, in Patent Document 1, the edge ring is positioned using a positioning pin that is mounted extending from its lower surface and inserted into a positioning hole formed in the mounting surface of the edge ring.

[0061] Replacement of edge rings when they are worn out is usually performed by the operator, but it is also considered to use a conveyor device for conveying edge rings. For example, in Patent Document 1, edge ring replacement is performed using a lifting pin that is set to extend or retract from the edge ring mounting surface of the mounting stage and to lift and disengage the edge ring from the edge ring mounting surface, and a conveyor arm that can feed both the wafer and the edge ring into and out of the processing chamber.

[0062] However, when replacing the edge ring using a conveyor, if the conveying accuracy of the edge ring is poor, a portion of the edge ring will act on the substrate mounting surface of the substrate support, and sometimes the edge ring cannot be properly mounted on the edge ring mounting surface of the substrate support. For example, if the difference between the inner diameter of the edge ring and the diameter of the substrate mounting surface is smaller than the conveying accuracy (conveying error) of the edge ring, and if the position of the substrate mounting surface is higher than the position of the edge ring mounting surface, the inner side of the edge ring will hook onto the substrate mounting surface, and sometimes the edge ring cannot be mounted on the edge ring mounting surface.

[0063] Furthermore, during plasma processing, a ring-shaped component called a cover ring is sometimes configured to cover the circumferential outer surface of the edge ring. In this case, if a conveying device is used to replace the cover ring, it is sometimes impossible to place the cover ring with appropriate high precision relative to the mounting surface of the cover ring.

[0064] Therefore, the technique of the reference implementation is to position and properly place the annular component on the mounting surface of the substrate support relative to the annular component, regardless of the conveying accuracy of the annular component.

[0065] Hereinafter, the substrate support stage, plasma processing system, and edge ring replacement method of the reference embodiment will be described with reference to the accompanying drawings. Furthermore, in this specification and the accompanying drawings, elements that actually have the same functional structure are labeled with the same symbols, thus omitting repeated descriptions.

[0066] (Reference Implementation Method 1)

[0067] Figure 1 This is a schematic front view showing the structure of the plasma processing system of the reference embodiment 1.

[0068] Figure 1 In the plasma processing system 1, plasma is used to perform plasma processing such as etching, film formation, diffusion, etc. on the wafer W, which serves as a substrate.

[0069] like Figure 1 As shown, the plasma processing system 1 includes an atmospheric section 10 and a depressurization section 11, which are integrally connected via load locking components 20 and 21. The atmospheric section 10 includes an atmospheric assembly for performing desired processing on the wafer W under atmospheric pressure. The depressurization section 11 includes a depressurization assembly for performing desired processing on the wafer W under a depressurized atmosphere.

[0070] Load locking components 20 and 21 are configured to connect the loading component 30 of the atmospheric section 10 (described later) and the transmission component 50 of the depressurization section 11 (described later) via a gate valve (not shown). Load locking components 20 and 21 are configured to temporarily hold the wafer W. In addition, load locking components 20 and 21 are configured to switch the internal pressure atmosphere to atmospheric pressure atmosphere and depressurization atmosphere (vacuum state).

[0071] The atmospheric section 10 includes: a loading assembly 30 comprising a conveying device 40 described later; and a loading port 32 for holding rings 31a and 31b. Ring 31a can hold multiple wafers W, and ring 31b can hold multiple edge rings F. Furthermore, the loading assembly 30 may also include, adjacent to each other, an orientation assembly (not shown) for adjusting the horizontal orientation of the wafers W and edge rings F, and a storage assembly (not shown) for storing multiple wafers W.

[0072] The interior of the loading assembly 30 is constructed of a rectangular housing, and the interior of the housing is maintained at atmospheric pressure. Multiple loading ports 32, for example five, are arranged side-by-side on one long side of the housing of the loading assembly 30. Load locking components 20 and 21 are arranged side-by-side on the other long side of the housing of the loading assembly 30.

[0073] A conveying device 40 for conveying wafers W or edge rings F is provided inside the loading assembly 30. The conveying device 40 includes: a conveying arm 41 that supports and moves the wafer W or edge ring F; a rotary table 42 that rotatably supports the conveying arm 41; and a base 43 that mounts the rotary table 42. In addition, a guide rail 44 extending along the long side of the loading assembly 30 is provided inside the loading assembly 30. The base 43 is mounted on the guide rail 44, and the conveying device 40 is configured to move along the guide rail 44.

[0074] The depressurization unit 11 includes: a transport assembly 50 for transporting a wafer W or an edge ring F; and a processing assembly 60, which serves as a plasma processing apparatus, for performing desired plasma processing on the wafer W transported from the transport assembly 50. The interiors of both the transport assembly 50 and the processing assembly 60 are maintained in a depressurized atmosphere. For example, a plurality of eight processing assemblies 60 are provided relative to one transport assembly 50. Furthermore, the number and arrangement of the processing assemblies 60 are not limited to the embodiment of this reference and can be arbitrarily set, as long as at least one processing assembly is provided that requires replacement of the edge ring F.

[0075] The interior of the transfer assembly 50 is composed of a polygonal (pentagonal in the illustrated example) frame, connected to the load locking assemblies 20 and 21 as described above. The transfer assembly 50 transports the wafer W fed into the load locking assembly 20 to a processing assembly 60, and discharges the wafer W, which has undergone desired plasma processing in the processing assembly 60, to the atmosphere 10 via the load locking assembly 21. Additionally, the transfer assembly 50 transports the edge ring F fed into the load locking assembly 20 to a processing assembly 60, and discharges the edge ring F of the replacement object within the processing assembly 60 to the atmosphere 10 via the load locking assembly 21.

[0076] For the wafer W, the processing component 60 performs plasma processing such as etching, film deposition, and diffusion. The processing component 60 can arbitrarily select the component for the desired plasma processing. Furthermore, the processing component 60 is connected to the transfer component 50 via a gate valve 61. The structure of this processing component 60 will be described later.

[0077] A transport device 70 for transporting wafers W or edge rings F is provided inside the transport assembly 50. The transport device 70 includes: a transport arm 71 that supports and moves the wafer W or edge ring F; a rotary table 72 that rotatably supports the transport arm 71; and a base 73 that mounts the rotary table 72. Furthermore, a guide rail 74 extending along the long side of the transport assembly 50 is provided inside the transport assembly 50. The base 73 is mounted on the guide rail 74, and the transport device 70 is configured to move along the guide rail 74.

[0078] In the transmission component 50, the wafer W or edge ring F held in the load locking component 20 is received by the transport arm 71 and sent to the processing component 60. Additionally, the wafer W or edge ring F held in the processing component 60 is received by the transport arm 71 and sent out to the load locking component 21.

[0079] Additionally, the plasma processing system 1 includes a control device 80. In one embodiment, the control device 80 processes computer-executable commands that cause the plasma processing system 1 to perform the various steps described herein. The control device 80 may be configured to control other elements of the plasma processing system 1 to perform the various steps described herein. In one embodiment, some or all of the control device 80 may also be included in other elements of the plasma processing system 1. The control device 80 may also include, for example, a computer 90. The computer 90 may also include, for example, a processing unit (CPU) 91, a storage unit 92, and a communication interface 93. The processing unit 91 may be configured to perform various control actions based on programs stored in the storage unit 92. The storage unit 92 may also include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or combinations thereof. The communication interface 93 may also communicate with other elements of the plasma processing system 1 via a communication line such as a LAN (Local Area Network).

[0080] Next, the wafer processing performed using the plasma processing system 1 configured as described above will be explained.

[0081] First, the wafer W is removed from the desired ring 31a using the conveying device 40 and fed into the load locking assembly 20. When the wafer W is fed into the load locking assembly 20, the load locking assembly 20 is sealed and depressurized. Then, the interior of the load locking assembly 20 is connected to the interior of the transmission assembly 50.

[0082] Next, the chip W is held by the transport device 70 and transported from the load locking component 20 to the transmission component 50.

[0083] Next, gate valve 61 is opened, and wafer W is fed into the desired processing unit 60 using the conveying device 70. Then, gate valve 61 is closed, and the wafer W is subjected to the desired processing in the processing unit 60. Furthermore, the processing of wafer W in this processing unit 60 will be described later.

[0084] Next, gate valve 61 is opened, and wafer W is delivered from processing component 60 using conveyor 70. Then, gate valve 61 is closed.

[0085] Next, the wafer W is fed into the load locking assembly 21 using the conveying device 70. When the wafer W is fed into the load locking assembly 21, the load locking assembly 21 is sealed and open to the atmosphere. Then, the interior of the load locking assembly 21 is connected to the interior of the loading assembly 30.

[0086] Next, the wafer W is held by the transport device 40 and returned from the load locking assembly 21 to the desired ring 31a via the loading assembly 30 and is housed. Thus, a series of wafer processing steps in the plasma processing system 1 are completed.

[0087] Furthermore, the transport of the edge ring between the ring clamp 31b and the desired processing component 60 during edge ring replacement is performed in the same manner as the transport of the wafer between the ring clamp 31a and the desired processing component 60 during wafer processing.

[0088] Next, use Figures 2-4 The processing component 60 is described below. Figure 2 This is a schematic longitudinal sectional view showing the structure of the processing component 60. Figure 3 yes Figure 2 A magnified view of a portion of the image. Figure 4 The circumferential direction of the wafer support stage 101 described later is... Figure 2 Partial sectional views of different sections.

[0089] like Figure 2 As shown, the processing assembly 60 includes a plasma processing chamber 100 serving as a processing container, a gas supply unit 130, an RF (Radio Frequency) power supply unit 140, and an exhaust system 150. Additionally, the processing assembly 60 also includes a gas supply unit 120 (described later). Figure 4 The processing assembly 60 further includes a wafer support stage 101 serving as a substrate support stage and an upper electrode nozzle 102.

[0090] The wafer support stage 101 is disposed in the lower region of the plasma processing space 100s within the plasma processing chamber 100, which is configured as a depressurized plasma processing chamber 100. The upper electrode nozzle 102 is disposed above the wafer support stage 101 and functions as part of the ceiling of the plasma processing chamber 100.

[0091] The wafer support stage 101 is configured to support the wafer W in the plasma processing space 100s. In one embodiment, the wafer support stage 101 includes a lower electrode 103, an electrostatic chuck 104, an insulator 105, a lifting pin 106, and a lifting pin 107. Although not shown in the figures, in one embodiment, the wafer support stage 101 may also include a temperature control component configured to adjust at least one of the electrostatic chuck 104 and the wafer W to a target temperature. The temperature control component may also include a heater, a flow path, or a combination thereof. A temperature-regulating fluid such as a refrigerant or a heat transfer gas flows in the flow path.

[0092] The lower electrode 103 is formed of a conductive material such as aluminum. In one embodiment, the temperature regulating component described above may also be provided on the lower electrode 103.

[0093] An electrostatic chuck 104 is a component configured to hold both the wafer W and the edge ring F by electrostatic force, and is disposed on the lower electrode 103. The upper surface of the central portion of the electrostatic chuck 104 is formed to be higher than the upper surface of the peripheral portion. The upper surface 104a of the central portion of the electrostatic chuck 104 serves as the substrate mounting surface for placing the wafer W, and the upper surface 104b of the peripheral portion of the electrostatic chuck 104 serves as the annular component mounting surface for placing the edge ring F, which is an annular component. The edge ring F is an annular component arranged to surround the wafer W placed on the upper surface 104a of the central portion of the electrostatic chuck 104.

[0094] An electrode 108 for adsorbing and holding the wafer W is provided in the center of the electrostatic chuck 104, and an electrode 109 for adsorbing and holding the edge ring F is provided in the periphery of the electrostatic chuck 104. The electrostatic chuck 104 has a structure in which the electrodes 108 and 109 are sandwiched between insulating materials made of insulating material.

[0095] A DC voltage from a DC power supply (not shown) is applied to electrode 108. The resulting electrostatic force attracts and holds the wafer W on the upper surface 104a of the central portion of the electrostatic chuck 104. Similarly, a DC voltage from a DC power supply (not shown) is applied to electrode 109. The resulting electrostatic force attracts and holds the edge ring F on the upper surface 104b of the peripheral portion of the electrostatic chuck 104. Figure 3 As shown, electrode 109 is a bipolar type comprising a pair of electrodes 109a and 109b.

[0096] In the embodiment of this reference, the central portion of the electrostatic chuck 104 provided with electrode 108 and the peripheral portion provided with electrode 109 are integrated, but these central and peripheral portions may also be separate.

[0097] In addition, in the embodiments of this reference, the electrode 109 used to adsorb and retain the edge ring F is bipolar, but it can also be unipolar.

[0098] Furthermore, the central portion of the electrostatic chuck 104 may be formed with a diameter smaller than that of the wafer W, for example. Figure 2 As shown, when the wafer W is placed on the upper surface 104a, the peripheral portion of the wafer W extends from the center of the electrostatic chuck 104.

[0099] Furthermore, the edge ring F has a step formed on its upper part, and the upper surface of its outer periphery is formed to be higher than the upper surface of its inner periphery. The inner periphery of the edge ring F is formed to be recessed into the lower side of the periphery of the wafer W extending from the center of the electrostatic chuck 104. That is, the inner diameter of the edge ring F is formed to be smaller than the outer diameter of the wafer W.

[0100] The insulator 105 is a cylindrical component made of ceramic or the like, supporting the electrostatic chuck 104. The insulator 105 is, for example, formed with an outer diameter equal to the outer diameter of the lower electrode 103, supporting the periphery of the lower electrode 103. Furthermore, the insulator 105 is configured such that its inner circumferential surface is located radially outward from the electrostatic chuck 104 compared to the lifting mechanism 114 described later.

[0101] The lifting pin 106 is a columnar component that moves up and down by extending from or submerging into the upper surface 104a of the central portion of the electrostatic chuck 104, and is made of, for example, ceramic. Three or more lifting pins 106 are arranged at intervals along the circumference of the electrostatic chuck 104, i.e., the circumference of the upper surface 104a. The lifting pins 106 are arranged at equal intervals along the aforementioned circumference. The lifting pins 106 are configured to extend in the vertical direction.

[0102] The lifting pin 106 is connected to the lifting mechanism 110 that raises and lowers the lifting pin 106. The lifting mechanism 110, for example, has a support member 111 that supports a plurality of lifting pins 106 and a drive unit 112 that generates a driving force to raise and lower the support member 111 and raise and lower the plurality of lifting pins 106. The drive unit 112 has a motor (not shown) that generates the driving force described above.

[0103] The lifting pin 106 is inserted into a through hole 113 that extends downward from the upper surface 104a of the center portion of the electrostatic chuck 104 and reaches the bottom surface of the lower electrode 103. In other words, the through hole 113 is formed to pass through the center portion of the electrostatic chuck 104 and the lower electrode 103.

[0104] The lifting pin 107 is a columnar component that can move up and down by extending from or submerging into the upper surface 104b of the peripheral portion of the electrostatic chuck 104. It is made of materials such as alumina, quartz, or SUS. Three or more lifting pins 107 are arranged at intervals along the circumference of the electrostatic chuck 104, that is, along the circumference of the upper surface 104a of the central portion and the upper surface 104b of the peripheral portion. For example, the lifting pins 107 are arranged at equal intervals along the aforementioned circumferential direction. The lifting pins 107 are configured to extend in the vertical direction.

[0105] In addition, the thickness of the lifting pin 107 is, for example, 1 to 3 mm.

[0106] The lifting pin 107 is connected to the lifting mechanism 114 that drives the lifting pin 107. The lifting mechanism 114, for example, has a support member 115 that is provided for each lifting pin 107 and supports the lifting pin 107 in a horizontally movable manner. The support member 115 supports the lifting pin 107 in a horizontally movable manner, and therefore, for example, has a thrust bearing. In addition, the lifting mechanism 114 has a drive unit 116 that generates a driving force to raise and lower the support member 111 and to raise and lower the lifting pin 107. The drive unit 116 has a motor (not shown) that generates the aforementioned driving force.

[0107] The lifting pin 107 is inserted into the through hole 117, which extends downward from the upper surface 104b of the peripheral portion of the electrostatic chuck 104 and reaches the bottom surface of the lower electrode 103. In other words, the through hole 117 is formed to pass through the peripheral portion of the electrostatic chuck 104 and the lower electrode 103.

[0108] The through hole 117 is formed with a positional accuracy that is at least higher than that of the edge ring of the conveying device 70.

[0109] Except for the upper end, the lifting pin 107 is, for example, formed in a cylindrical shape, with the upper end formed in a hemispherical shape that gradually tapers upwards. The upper end of the lifting pin 107 abuts against and supports the bottom surface of the edge ring F when it rises. Figure 3 As shown, a recess F1 formed by an upwardly recessed concave surface F1a is provided on the bottom surface of the edge ring F at a position corresponding to the lifting pin 107.

[0110] Viewed from above, the size D1 of the recess F1 (opening diameter) of the edge ring F is greater than the conveying accuracy (error) (±X μm) of the edge ring F conveyed by the conveying device 70 above the upper surface 104b of the electrostatic chuck 104, and also greater than the size D2 of the upper end of the lifting pin 107. For example, satisfying the relationship D1 > D2 and D1 > 2X, D1 is approximately 0.5 mm. In another example, D1 can also be 0.5 to 3 mm.

[0111] Furthermore, as described above, the upper end of the lifting pin 107 is formed into a hemispherical shape that gradually tapers upwards. As a result, the curvature of the concave surface F1a of the recess F1 forming the edge ring F is set to be smaller than that of the convex surface (i.e., the upper end surface) 107a of the upper end of the lifting pin 107 that forms the aforementioned hemispherical shape. That is, the radius of curvature of the concave surface F1a is larger than that of the convex surface 107a.

[0112] Furthermore, when the thickness of the outer periphery of the edge ring F is 3 to 5 mm, the depth of the recess F1 is set to, for example, 0.5 to 1 mm.

[0113] In addition, materials such as Si and SiC can be used in the edge ring F.

[0114] In addition, such as Figure 4As shown, a heat transfer gas supply path 118 is formed on the upper surface 104b of the peripheral portion of the electrostatic chuck 104. The heat transfer gas supply path 118 supplies a heat transfer gas such as helium to the back side of the edge ring F placed on the upper surface 104b. The heat transfer gas supply path 118 is configured to be in fluid communication with the upper surface 104b. Furthermore, the side of the heat transfer gas supply path 118 opposite to the upper surface 104b is in fluid communication with a gas supply unit 120. The gas supply unit 120 may also include one or more gas sources 121 and one or more flow controllers 122. In one embodiment, the gas supply unit 120 is configured to supply gas from the gas source 121 to the heat transfer gas supply path via the flow controllers 122, for example. Each flow controller 122 may also include, for example, a mass flow controller or a pressure-controlled flow controller.

[0115] Although the illustration is omitted, heat transfer gas is also supplied to the back side of the wafer W placed on the upper surface 104a of the central part of the electrostatic chuck 104, thus forming the same structure as the heat transfer gas supply path 118.

[0116] Alternatively, a suction path can be formed for vacuum adsorption of the edge ring F of the upper surface 104b placed on the periphery of the electrostatic chuck 104. The suction path is, for example, provided in the electrostatic chuck 104 to be in fluid communication with the upper surface 104b. All or part of the aforementioned heat transfer gas supply path and suction path can also be shared.

[0117] return Figure 2 The upper electrode nozzle 102 is configured to supply one or more processing gases from the gas supply unit 130 to the plasma processing space 100s. In one embodiment, the upper electrode nozzle 102 has a gas inlet 102a, a gas diffusion chamber 102b, and a plurality of gas outlets 102c. The gas inlet 102a is in fluid communication with, for example, the gas supply unit 130 and the gas diffusion chamber 102b. The plurality of gas outlets 102c are in fluid communication with the gas diffusion chamber 102b and the plasma processing space 100s. In one embodiment, the upper electrode nozzle 102 is configured to supply one or more processing gases from the gas inlet 102a through the gas diffusion chamber 102b and the plurality of gas outlets 102c to the plasma processing space 100s.

[0118] The gas supply unit 130 may also include one or more gas sources 131 and one or more flow controllers 132. In one embodiment, the gas supply unit 130 is configured to, for example, supply one or more processing gases from their respective gas sources 131 to the gas inlet 102a via their respective flow controllers 132. Each flow controller 132 may, for example, include a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply unit 130 may also include one or more flow modulation devices for modulating or pulsedizing the flow rate of one or more processing gases.

[0119] The RF power supply unit 140 is configured to supply RF power, such as one or more RF signals, to one or more electrodes, such as the lower electrode 103, the upper electrode nozzle 102, or both the lower electrode 103 and the upper electrode nozzle 102. This generates plasma from one or more processing gases supplied to the plasma processing space 100s. Therefore, the RF power supply unit 140 can function as at least part of a plasma generation unit configured to generate plasma from one or more processing gases in a plasma processing chamber. The RF power supply unit 140 includes, for example, two RF generation units 141a and 141b and two matching circuits 142a and 142b. In one embodiment, the RF power supply unit 140 is configured to supply a first RF signal from the first RF generation unit 141a to the lower electrode 103 via the first matching circuit 142a. For example, the first RF signal may also have a frequency in the range of 27MHz to 100MHz.

[0120] In another embodiment, the RF power supply unit 140 is configured to supply a second RF signal from the second RF generation unit 141b to the lower electrode 103 via the second matching circuit 142b. For example, the second RF signal may also have a frequency in the range of 400 kHz to 13.56 MHz. Alternatively, a DC (Direct Current) pulse generation unit may be used instead of the second RF generation unit 141b.

[0121] Furthermore, although the illustrations are omitted, another embodiment is considered in this invention. For example, in an alternative embodiment, the RF power supply unit 140 may be configured to supply a first RF signal from the RF generation unit to the lower electrode 103, a second RF signal from another RF generation unit to the lower electrode 103, and a third RF signal from yet another RF generation unit to the lower electrode 103. Alternatively, in another alternative embodiment, a DC voltage may be applied to the upper electrode nozzle 102.

[0122] In addition, in various embodiments, the amplitude of one or more RF signals (i.e., a first RF signal, a second RF signal, etc.) may be pulsed or modulated. Amplitude modulation may also be included in pulsed RF signal amplitude between on and off states, or between two or more different on states.

[0123] The exhaust system 150 may be connected, for example, to an exhaust port 100e located at the bottom of the plasma processing chamber 100. The exhaust system 150 may also include a pressure valve and a vacuum pump. The vacuum pump may also include a turbomolecular pump, a coarse traction pump, or a combination thereof.

[0124] Next, an example of wafer processing using the processing unit 60 configured as described above will be described. Furthermore, in the processing unit 60, processes such as etching, film deposition, and diffusion are performed on the wafer W.

[0125] First, the wafer W is fed into the plasma processing chamber 100, and is placed on the electrostatic chuck 104 by the lifting pin 106. Then, a DC voltage is applied to the electrodes 108 of the electrostatic chuck 104, thereby electrostatically attracting and holding the wafer W on the electrostatic chuck 104. After the wafer W is fed in, the vacuum system 150 is used to reduce the pressure inside the plasma processing chamber 100 to a specified vacuum level.

[0126] Next, processing gas is supplied from the gas supply unit 130 to the plasma processing space 100s via the upper electrode nozzle 102. Additionally, high-frequency power HF for plasma generation is supplied from the RF power supply unit 140 to the lower electrode 103, thereby exciting the processing gas and generating plasma. At this time, high-frequency power LF for ion introduction can also be supplied from the RF power supply unit 140. Furthermore, plasma processing is performed on the wafer W by the action of the generated plasma.

[0127] In addition, during plasma processing, heat transfer gases such as He or Ar are supplied to the bottom surface of the wafer W and edge ring F held by the electrostatic chuck 104 via the heat transfer gas supply path 118.

[0128] When plasma processing ends, the supply of heat transfer gas to the bottom surface of the wafer W can also be stopped. Additionally, the supply of high-frequency power HF from the RF power supply unit 140 and the supply of processing gas from the gas supply unit 130 are stopped. If high-frequency power LF is supplied during plasma processing, the supply of that high-frequency power LF is also stopped. Next, the adsorption and holding of the wafer W by the electrostatic chuck 104 is stopped.

[0129] Then, the wafer W is raised using the lifting pin 106, causing it to detach from the electrostatic chuck 104. During this detachment, the wafer W can also undergo a de-energization process. The wafer W is then ejected from the plasma processing chamber 100, completing the wafer processing sequence.

[0130] Furthermore, the edge ring F is held by electrostatic attraction during wafer processing, specifically during plasma processing, and also before and after plasma processing. Before and after plasma processing, different voltages are applied to electrodes 109a and 109b to create a potential difference between them. The edge ring F is held by the electrostatic force corresponding to this potential difference. Conversely, during plasma processing, the same voltage (e.g., a positive voltage) is applied to electrodes 109a and 109b, creating a potential difference between the edge ring F (set to ground potential) and electrodes 109a and 109b. The edge ring F is held by the electrostatic force corresponding to this potential difference. Furthermore, during the period when the edge ring F is held by electrostatic attraction, the lifting pin 107 is inserted into the upper surface 104b of the peripheral portion of the electrostatic chuck 104.

[0131] As mentioned above, the edge ring F is held in place by electrostatic attraction, so no misalignment occurs between the edge ring F and the electrostatic chuck 104 when the heat transfer gas is supplied to the bottom surface of the edge ring F.

[0132] Next, for an example of installation processing within the edge ring F-direction processing assembly 60 using the plasma processing system 1 described above, using... Figures 5-7 Please provide an explanation. Figures 5-7 This diagram schematically illustrates the state within the processing component 60 during installation. Furthermore, the following processing is performed under the control of the control device 80. Additionally, for example, the following processing is performed with the electrostatic chuck 104 at room temperature.

[0133] First, a conveying arm 71 holding the edge ring F is inserted from the vacuum atmosphere transfer assembly 50 of the plasma processing system 1 into the depressurized plasma processing chamber 100 of the processing assembly 60, which is the object to be mounted on the edge ring F, via the inlet / outlet (not shown). Then, as... Figure 5 As shown, an edge ring F held by a conveying arm 71 is conveyed above the upper surface 104b of the peripheral portion of the electrostatic chuck 104. Furthermore, the circumferential orientation of the edge ring F is adjusted and held in place by the conveying arm 71.

[0134] Next, raise all the lifting pins 107, as follows: Figure 6As shown, the edge ring F is transferred from the conveying arm 71 to the lifting pin 107. Specifically, during the raising of all the lifting pins 107, the upper end of the lifting pin 107 first abuts against the bottom surface of the edge ring F held by the conveying arm 71. At this time, the upper end of the lifting pin 107 is received in the recess F1 provided on the bottom surface of the edge ring F. This is because, as mentioned above, the recess F1 is provided at the position corresponding to each lifting pin 107 on the bottom surface of the edge ring F. In addition, when viewed from above, the size of the recess F1 is larger than the conveying accuracy of the edge ring F of the conveying device 70 and larger than the size of the upper end of the lifting pin 107. When the upper end of the lifting pin 107 abuts against the bottom surface of the edge ring F and the lifting pin 107 continues to rise, as... Figure 6 As shown, the edge ring F is connected to and supported by the lifting pin 107.

[0135] Then, as described above, the concave surface F1a of the recess F1 forming the edge ring F is set to have a curvature smaller than that of the hemispherical convex surface 107a at the upper end of the lifting pin 107. Therefore, after the edge ring F connects to the lifting pin 107, even if its position shifts relative to the lifting pin 107, it moves and is positioned relative to the lifting pin 107 as follows: that is, the edge ring F moves relative to the lifting pin 107 in such a way that the top of the upper end of the lifting pin 107 slides relative to the concave surface F1a of the edge ring F. Moreover, the edge ring F stops at a position where the center of the recess F1 and the center of the upper end of the lifting pin 107 coincide when viewed from above, that is, at a position where the deepest part of the recess F1 and the top of the upper end of the lifting pin 107 coincide when viewed from above, and is positioned relative to the lifting pin 107 at this position.

[0136] Furthermore, in order to facilitate the movement used for the above positioning after the edge ring F is connected to the lifting pin 107, the lifting pin 107 can be moved up and down slightly by itself, or it can be lowered at a different speed for each lifting pin 107, or at a high speed.

[0137] After the edge ring F is positioned relative to the lifting pin 107, the conveyor arm 71 is withdrawn from the plasma processing chamber 100 and the lifting pin 107 is lowered, thereby, as Figure 7 As shown, the edge ring F is placed on the upper surface 104a of the periphery of the electrostatic chuck 104.

[0138] As described above, the edge ring F is positioned relative to the lifting pin 107. Furthermore, the through hole 117 and the lifting pin 107 are set with high precision relative to the center of the electrostatic chuck 104. Therefore, the edge ring F is placed on the upper surface 104a while being positioned relative to the center of the electrostatic chuck 104.

[0139] Furthermore, the lifting pin 107 may be lowered, for example, until the upper end face of the lifting pin 107 is inserted into the upper surface 104a of the periphery of the electrostatic chuck 104.

[0140] Then, a DC voltage from a DC power supply (not shown) is applied to the electrode 109 located at the periphery of the electrostatic chuck 104, and the edge ring F is attracted and held on the upper surface 104b by the electrostatic force generated therefrom. Specifically, different voltages are applied to the electrodes 109a and 109b, and the edge ring F is attracted and held on the upper surface 104b by the electrostatic force corresponding to the potential difference generated therefrom.

[0141] Thus, the installation of a series of edge rings F is completed.

[0142] Furthermore, with the aforementioned suction path in place, the edge ring F can be vacuum-adsorbed onto the upper surface 104b using the suction path before being held by electrostatic adsorption. Then, after switching from vacuum adsorption using the suction path to electrostatic adsorption, the vacuum level of the suction path can be measured, and based on the measurement results, the edge ring F can be placed on the upper surface 104b, and a decision can be made regarding whether to modify it.

[0143] The edge ring F is disassembled in the reverse order of the installation process described above.

[0144] Alternatively, the edge ring F can be cleaned during disassembly and then sent out of the plasma processing chamber 100.

[0145] As described above, the wafer support stage 101 of this embodiment includes: an upper surface 104a for placing a wafer W; an upper surface 104b for placing an edge ring F arranged to surround and hold the wafer W on the upper surface; three or more lifting pins 107 that extend or retract from the upper surface 104b; and a lifting mechanism 114 for raising and lowering the lifting pins 107. Furthermore, a recess F1 formed by an upwardly recessed concave surface F1a is provided on the bottom surface of the edge ring F at a position corresponding to each lifting pin 107. Moreover, when viewed from above, the size of the recess F1 is larger than the transport error of the edge ring F towards the upper surface 104b, and larger than the size of the upper end of the lifting pin 107. Therefore, when the lifting pin 107 is raised and abuts against the bottom surface of the edge ring F, the upper end of the lifting pin 107 can be accommodated in the recess F1 of the edge ring F. Furthermore, in this embodiment of the reference, the upper end of the lifting pin 107 is formed into a hemispherical shape that gradually tapers upwards, and the curvature of the concave surface F1a forming the recess F1 is smaller than that of the convex surface forming the hemispherical shape at the upper end of the lifting pin 107. Therefore, when the edge ring F is supported by the lifting pin 107, the edge ring F can be positioned relative to the lifting pin 107 at a position that coincides with the position of the deepest part of the recess F1 and the top of the upper end of the lifting pin 107 when viewed from above. Therefore, when the lifting pin 107 supporting the edge ring F is lowered, the lifting pin 107 can be positioned relative to the electrostatic chuck 104 and placed on the upper surface 104b. That is, according to the embodiment of the reference, the edge ring F can be positioned and placed relative to the wafer support stage 101 regardless of the transport accuracy of the edge ring F.

[0146] Furthermore, if the wafer support stage 101 of this embodiment is provided in the plasma processing apparatus, the edge ring F can be replaced using the transport device 70 without the need for an operator. When an operator replaces the edge ring, the processing container containing the edge ring needs to be exposed to the atmosphere. However, if the wafer support stage 101 of this embodiment is provided, the edge ring F can be replaced using the transport device 70, thus eliminating the need to expose the plasma processing chamber 100 to the atmosphere during replacement. Therefore, according to this embodiment, the replacement time can be significantly reduced. Additionally, in this embodiment, three or more lifting pins are provided, allowing for alignment of the edge ring F not only radially (from the center of the wafer support stage 101 towards the outer periphery) but also circumferentially.

[0147] Furthermore, in this embodiment of the reference, each lifting pin 107 is provided with a lifting mechanism 114 and a support member 115 that supports the lifting pin 107 in a horizontally movable manner. Therefore, when the electrostatic chuck 104 undergoes thermal expansion or contraction, the lifting pin 107 can move horizontally according to the thermal expansion or contraction. Therefore, the lifting pin 107 will not break when the electrostatic chuck 104 undergoes thermal expansion or contraction.

[0148] Furthermore, in this embodiment, after the edge ring F is placed, it is held in place by electrostatic attraction using the electrode 109. Therefore, it is unnecessary to provide protrusions or recesses on the bottom surface or the placement surface of the edge ring F (the upper surface 104b of the electrostatic chuck 104) to suppress misalignment of the edge ring F after placement. In particular, it is unnecessary to provide such protrusions on the upper surface 104b of the electrostatic chuck 104, thus reducing the complexity of the structure of the electrostatic chuck 104.

[0149] In addition, in the embodiment of this reference, there are no other components between the electrostatic chuck 104 of the wafer support stage 101 and the edge ring F, so the cumulative tolerance is less.

[0150] Figure 8 This is another example of a lifting pin.

[0151] Figure 8 In addition to having an upper end portion 161 that is formed into a hemispherical shape, the lifting pin 160 also has a columnar portion 162 and a connecting portion 163.

[0152] The columnar portion 162 is formed as a columnar shape that is thicker than the upper end portion 161. Specifically, for example, it is formed as a cylindrical shape that is thicker than the upper end portion 161.

[0153] The connecting portion 163 is the part that connects the upper end portion 161 and the columnar portion 162. The connecting portion is formed into a pyramidal shape that gradually tapers upwards. Specifically, for example, it is formed into a truncated cone shape in which the diameter of its lower end is the same as that of the columnar portion 162 and the diameter of its upper end is the same as that of the upper end portion 161.

[0154] By using the lifting pin 160, the positioning accuracy of the edge ring F relative to the lifting pin 160 can be further improved.

[0155] Furthermore, by using the aforementioned lifting pin 107, the recess F1 can be made shallower, thus enabling the edge ring F to be thinned and the weight reduced.

[0156] Figure 9 This is another illustration of an electrostatic chuck.

[0157] Figure 9The electrostatic chuck 170 has an insulating guide 180 in the through hole 117 through which the lifting pin 107 is inserted.

[0158] The guide member 180 is, for example, a cylindrical component made of resin and fits into the through hole 117. In the electrostatic chuck 170, the lifting pin 107 is inserted into the guide member 180 provided in the through hole 117 for use, and the direction of movement of the lifting pin 107 during lifting is defined by the guide member 180 as vertical. Therefore, the upper end of the lifting pin 107 can be positioned with higher precision relative to the electrostatic chuck 170. Therefore, when the lifting pin 107, which is positioned and supports the edge ring F, is lowered and the edge ring F is placed on the upper surface 104b of the electrostatic chuck 170, the edge ring F can be placed on the upper surface 104b with higher precision relative to the electrostatic chuck 170.

[0159] (Reference implementation method 2)

[0160] Figure 10 This is a partial enlarged cross-sectional view showing the structure of the wafer support stage 200, which serves as a substrate support stage, according to the reference embodiment 2.

[0161] In the referenced embodiment 1, the edge ring F is the replacement object, but in this reference embodiment, the cover ring C is the replacement object. The cover ring C is an annular component that covers the circumferential outer surface of the edge ring F.

[0162] Figure 10 The wafer support stage 200 has a lower electrode 201, an electrostatic chuck 202, a support body 203, an insulator 204, and a lifting pin 205.

[0163] exist Figure 2 The lower electrode 103 and electrostatic chuck 104 shown are provided with through holes 117 to allow passage between them, but the lower electrode 201 and electrostatic chuck 202 are not provided with through holes 117. In this respect, the lower electrode 201 and electrostatic chuck 202 differ from the lower electrode 103 and electrostatic chuck 104.

[0164] The support 203 is a ring-shaped component formed when viewed from above, for example using quartz or the like, supporting the lower electrode 201 and the cover ring C. The upper surface 203a of the support 203 serves as the mounting surface for the ring-shaped cover ring C, which is the object to be replaced.

[0165] The insulator 204 is a cylindrical component made of ceramic or the like, which supports the support body 203. The insulator 204 is formed, for example, with an outer diameter equal to that of the support body 203, and supports the periphery of the support body 203.

[0166] Figure 2 Unlike the lower electrode 103 and electrostatic chuck 104, the lifting pin 107 is inserted into a through hole 117. In this case, the lifting pin 205 is inserted into a through hole 206 that extends the support 203 from the upper surface 203a in a vertical direction. In this respect, the lifting pin 205 differs from the lifting pin 107. Like the lifting pin 107, three or more lifting pins 205 are spaced apart from each other in the circumferential direction of the electrostatic chuck 202.

[0167] Like the lifting pin 107, the upper end of the lifting pin 205 is formed into a hemispherical shape that gradually tapers upwards. When the lifting pin 205 rises, its upper end abuts against the bottom surface of the cover ring C and supports the cover ring C. At the corresponding positions on the bottom surface of the cover ring C, a recess C1 formed by an upwardly recessed concave surface C1a is provided.

[0168] When viewed from above, the size of the recess C1 of the cover ring C is greater than the conveying accuracy of the cover ring C performed by the conveying device 70, and also greater than the size of the upper end of the lifting pin 205.

[0169] Furthermore, as described above, the upper end of the lifting pin 205 is formed into a hemispherical shape that gradually tapers upwards. Correspondingly, the concave surface C1a of the recessed portion C1 forming the covering ring C is set to have a curvature smaller than that of the convex surface 205a forming the hemispherical shape at the upper end of the lifting pin 205.

[0170] The installation and removal processes of the cover ring C are the same as those of the edge ring F in the referenced embodiment 1, therefore, their description is omitted.

[0171] also, Figure 2 As shown, the lifting pin 107 relative to the edge ring F is configured to extend from or be submerged in the upper surface 104b of the periphery of the electrostatic chuck 104. Furthermore, when the edge ring F is attracted by electrostatic force, the upper end face of the lifting pin 107 is submerged from the upper surface 104a of the periphery of the electrostatic chuck 104. In contrast, the lifting pin 205 relative to the cover ring C can also be configured to extend from or be submerged in the upper surface 203a of the support 203 if the extension amount is adjustable. Additionally, when the edge ring F is attracted by electrostatic force, the upper end face of the lifting pin 205 can also extend from the upper surface 203a of the support 203.

[0172] (Refer to Implementation Method 3)

[0173] Figure 11 This is a partial enlarged cross-sectional view showing the schematic structure of the wafer support stage 300, which serves as a substrate support stage, according to the reference embodiment 3.

[0174] In the referenced embodiment 1, the edge ring F is the replacement object; in the referenced embodiment 2, the cover ring C is the replacement object; in this referenced embodiment, both the edge ring F and the cover ring C are replacement objects.

[0175] Furthermore, in the embodiment of this reference, the edge ring F and the cover ring C are replaced separately. Therefore, a lifting pin 107 and a through hole 117 are provided relative to the edge ring F, and a lifting pin 205 and a through hole 206 are provided relative to the cover ring C. In addition, the aforementioned recesses F1 and C1 are formed on the bottom surface of the edge ring F and the bottom surface of the cover ring C, respectively.

[0176] The installation and removal processes of the edge ring F and the cover ring C in this embodiment are the same as those of the edge ring F in Embodiment 1, and therefore their descriptions are omitted.

[0177] (This implementation method)

[0178] In the referenced embodiment 1, the edge ring F is the replacement object; in the referenced embodiment 2, the cover ring C is the replacement object; and in the referenced embodiment 3, both the edge ring F and the cover ring C are replacement objects. In contrast, in this embodiment, the cover ring supporting the edge ring or the edge ring unit itself is the replacement object.

[0179] That is, in this embodiment, similar to the referenced embodiment 3, both an edge ring and a cover ring are used. Moreover, the technology of this embodiment is a technology for selectively replacing the edge ring in a state supported by the cover ring (i.e., replacing it as an integral part of the cover ring) and replacing the edge ring as a single unit when replacing the edge ring in a plasma processing system using both an edge ring and a cover ring.

[0180] Figure 12 This is a schematic front view showing the structure of the plasma processing system of this embodiment.

[0181] Figure 12 Plasma processing system 1a and Figure 1 Unlike the plasma processing system 1, the decompression unit 11, in addition to having a transmission component 50 and a processing component 60, also has a storage component 62 for storing at least one of the cover ring supporting the edge ring and the fixture described later used for replacing the edge ring unit.

[0182] In the illustration, two receiving components 62 are provided relative to a transmission component 50. At least one of the receiving components 62 receives the cover ring of the supporting edge ring, and at least the other receives the fixture. Furthermore, the number and arrangement of the receiving components 62 are not limited to this embodiment and can be arbitrarily set, as long as at least one is provided.

[0183] The receiving component 62 is connected to the transmission component 50 via a gate valve 63. Furthermore, the interior of the receiving component 62, like the interiors of the transmission component 50 and the processing component 60, is maintained in a reduced-pressure atmosphere.

[0184] In the transfer assembly 50 of the plasma processing system 1a, a cover ring or fixture supporting an edge ring, housed in the receiving assembly 62, is received by a transfer arm 71 and transported to the processing assembly 60. Additionally, in the transfer assembly 50, a cover ring or fixture supporting an edge ring, held within the processing assembly 60, is received by a transfer arm 71 and transported to the receiving assembly 62.

[0185] in addition, Figure 12 Plasma processing system 1a and Figure 1 In the plasma processing system 1, the structure of the wafer support stage, which serves as a substrate support stage, within the processing component 60 is different.

[0186] Figure 13 This is a partial enlarged cross-sectional view showing the general structure of the wafer support stage 400, which serves as a substrate support stage in this embodiment.

[0187] Figure 13 The wafer support stage 400 has a lower electrode 401, an electrostatic chuck 402, a support body 403, an insulator 404, and a lifting component 405.

[0188] An insertion hole 406 is provided on the lower electrode 401 and the electrostatic chuck 402, through which the lifting component 405 inserts. The insertion hole 406 is formed to extend downward from, for example, the upper surface 402a of the periphery of the electrostatic chuck 402 and reach the bottom surface of the lower electrode 401.

[0189] Furthermore, in the illustration, the electrostatic chuck 402 is provided with a bipolar electrode 109 for adsorbing and retaining the edge ring Fa, but the electrode for adsorbing and retaining the edge ring Fa can also be unipolar. Alternatively, the electrode for adsorbing and retaining the edge ring Fa can be omitted from the electrostatic chuck 402.

[0190] In addition, when the electrostatic chuck is provided with electrodes for adsorbing the edge ring Fa, the peripheral part of the electrodes for adsorbing the edge ring Fa and the central part of the electrodes 108 for adsorbing the wafer W can be integrated or separate.

[0191] The support 403 is a component formed into a ring shape when viewed from above, for example using quartz, and supports the lower electrode 401.

[0192] The upper surface 403a of the support 403 and the upper surface 402a of the periphery of the electrostatic chuck 402 become the mounting surfaces of the annular component supporting the edge ring Fa and the covering ring Ca, which are the replacement objects of this embodiment.

[0193] The insulator 404 is a cylindrical component made of ceramic or the like, which supports the support 403. The insulator 404 is formed to have, for example, an outer diameter equal to the outer diameter of the support 403, and supports the periphery of the support 403.

[0194] In this embodiment, the cover ring Ca is configured to support the edge ring Fa and is formed to at least partially overlap with the edge ring Fa when viewed from above. The cover ring Ca supports the edge ring Fa, for example, in a state where it is substantially concentric with the cover ring Ca. In one embodiment, the diameter of the innermost circumference of the cover ring Ca is smaller than the diameter of the outermost circumference of the edge ring Fa. When the cover ring Ca and the edge ring Fa are configured to be substantially concentric, the inner circumference of the cover ring Ca overlaps at least partially with the outer circumference of the edge ring Fa when viewed from above. For example, in one embodiment, the edge ring Fa has a recess Fa1 that is radially inwardly recessed at its bottom outer circumference, and the cover ring Ca has a convex portion Ca1 that extends radially inwardly at its bottom. The edge ring Fa is supported by the engagement of the convex portion Ca1 and the recess Fa1.

[0195] Furthermore, in this embodiment, the edge ring Fa and Figure 2 Similarly, the edge ring F has a step formed on its upper part, making the upper surface of the outer periphery higher than the upper surface of the inner periphery, and its inner diameter is made smaller than the outer diameter of the wafer W.

[0196] Alternatively, in one embodiment, to suppress misalignment between the covering ring Ca and the edge ring Fa, a protrusion may be provided on one of them, and a recess that engages with the protrusion may be provided on the other. Specifically, as shown... Figure 14 As shown, an annular protrusion Ca2, concentric with the covering ring Ca, can be formed on the upper surface of the covering ring Ca, and an annular recess Fa2, concentric with the edge ring Fa, can be formed on the lower surface of the edge ring Fa at a position corresponding to the annular protrusion Ca2. The engagement of the annular protrusion Ca2 and the annular recess Fa2 can suppress misalignment between the covering ring Ca and the edge ring Fa. Alternatively, instead of the above example, an annular recess can be formed on the upper surface of the covering ring Ca, and an annular protrusion can be formed on the lower surface of the edge ring Fa; their engagement can also suppress misalignment between the covering ring Ca and the edge ring Fa.

[0197] Furthermore, the edge ring Fa can be a single piece or a two-piece piece (i.e., composed of multiple parts).

[0198] The lifting member 405 is a component that extends and rises from a position overlapping the cover ring C when viewed from above from the upper surface 402a of the periphery of the electrostatic chuck 402. The lifting member 405 rises and falls while extended from this position, thereby supporting and raising / lowering the cover ring Ca, which supports the edge ring Fa. In one embodiment, the lifting member 405 is a long, cylindrical component, similar to the lifting pin 107 described above.

[0199] Additionally, the lifting component 405 is configured to utilize the lifting pin 106 (see below) in the fixture described later. Figure 16 When the jig is raised or lowered, it does not obstruct the raising or lowering of the jig. In addition, the lifting pin 106 is an example of a lifting component relative to the wafer W that can be raised or lowered by extending from the upper surface (i.e., the substrate mounting surface) 104a of the center of the electrostatic chuck 402.

[0200] The lifting component 405 extends or retracts from, for example, the upper surface 402a of the peripheral portion of the electrostatic chuck 402 at a position corresponding to the protrusion Ca1 of the cover ring Ca. An insertion hole 406 for the lifting component 405 to pass through is formed at the position corresponding to the protrusion Ca1 of the cover ring Ca. Furthermore, in the illustration, the lifting component 405 is an elongated columnar component; therefore, the insertion hole 406 penetrates both the electrostatic chuck 402 and the lower electrode 401. However, depending on the shape of the lifting component 405, the insertion hole 406 may not penetrate both the electrostatic chuck 402 and the lower electrode 401.

[0201] Lifting component 405 and Figure 2 Similarly, three or more lifting pins 107 are arranged at intervals around the electrostatic chuck 402.

[0202] The lifting mechanism that raises and lowers the lifting component 405 can be set in each lifting component 405, or a shared lifting mechanism can be set for multiple lifting components 405.

[0203] The lifting component 405, like the lifting pin 107, can also have its upper end formed into a hemispherical shape that gradually tapers upwards. For example, when rising, the upper end of the lifting component 405 abuts against the bottom surface of the protrusion Ca1 of the cover ring Ca, thus supporting the cover ring C that supports the edge ring F. Figure 15 As shown, a recessed portion Ca3 formed by an upwardly recessed concave surface Ca3a can also be provided on the bottom surface of the protrusion Ca1 of the covering ring C at a position corresponding to the lifting component 405.

[0204] When the recess Ca3 is provided, its size, for example, is larger than the conveying accuracy of the cover ring C performed by the conveying device 70 when viewed from above, and is also larger than the size of the upper end of the lifting member 405.

[0205] Furthermore, as described above, when the upper end of the lifting member 405 is formed into a hemispherical shape that gradually tapers upwards, the curvature of the concave surface Ca3a forming the recess Ca3 can also be set to be smaller than that of the convex surface 405a forming the hemispherical shape at the upper end of the lifting member 405.

[0206] Next, an example of the installation process of the cover ring Ca, supported by the edge ring Fa, using the plasma processing system 1a, will be described. Furthermore, the following processes are performed under the control of the control device 80.

[0207] First, using the transport arm 71 of the vacuum atmosphere transport assembly 50 of the plasma processing system 1a, the cover ring Ca supporting the edge ring Fa is removed from the receiving assembly 62 and held. Next, the transport arm 71, holding the cover ring Ca supporting the edge ring Fa, is inserted into the depressurized plasma processing chamber 100 of the processing assembly 60 containing the object to be mounted via the feed outlet (not shown). Then, the cover ring Ca supporting the edge ring Fa is transported above the upper surface 402a of the peripheral portion of the electrostatic chuck 402 and the upper surface 403a of the support 403 (hereinafter sometimes simply referred to as the "annular component mounting surface of the wafer support stage 400") using the transport arm 71.

[0208] Next, all lifting components 405 are raised, transferring the cover ring Ca supporting the edge ring Fa from the conveyor arm 71 to the lifting component 405. Specifically, during the raising of all lifting components 405, the upper end of the lifting component 405 first abuts against the bottom surface of the cover ring Ca held by the conveyor arm 71. As the lifting component 405 continues to rise after this abutment, the cover ring Ca supporting the edge ring is transferred to and supported by the lifting component 405.

[0209] Then, the transport arm 71 is withdrawn from the plasma processing chamber 100, and then the lifting member 405 is lowered, thereby placing the cover ring Ca supporting the edge ring Fa onto the annular component placement surface of the wafer support stage 400.

[0210] Therefore, the installation process of the cover ring Ca supporting the edge ring Fa is completed.

[0211] Next, an example of the disassembly process of the cover ring Ca, supported by the edge ring Fa, performed using the plasma processing system 1a, will be described. Furthermore, the following processes are performed under the control of the control device 80.

[0212] First, all the lifting components 405 are raised, and the cover ring Ca supporting the edge ring Fa is transferred from the annular component of the wafer support stage 400 to the lifting component 405. Then, the lifting component 405 continues to rise, and the cover ring Ca supporting the edge ring Fa moves upward.

[0213] Next, the transport arm 71 is inserted from the vacuum atmosphere transport assembly 50 of the plasma processing system 1a into the depressurized plasma processing chamber 100 via the inlet / outlet (not shown). Then, the transport arm 71 is moved between the annular component mounting surface of the wafer support stage 400 and the cover ring Ca supporting the edge ring Fa.

[0214] Next, the lifting component 405 is lowered, transferring the cover ring Ca supporting the edge ring Fa from the lifting component 405 to the conveying arm 71. Then, the conveying arm 71 is withdrawn from the plasma processing chamber 100, and the cover ring Ca supporting the edge ring Fa is sent out of the processing assembly 60. Then, the cover ring Ca supporting the edge ring Fa is stored in the storage assembly 62 using the conveying arm 71.

[0215] Therefore, the disassembly process of the cover ring Ca supporting the edge ring Fa is completed.

[0216] Next, use Figures 16-21 An example of the disassembly process of the edge ring Fa unit using the plasma processing system 1a will be described. Furthermore, the following processes are performed under the control of the control device 80. In the installation process of the edge ring Fa unit, a jig J is used. The jig J is configured to support only the edge ring Fa without supporting the cover ring Ca; for example, it is a plate-shaped component having a portion longer than the inner diameter of the edge ring Fa and shorter than the inner diameter of the cover ring Ca. Specifically, the jig J is, for example, a generally rectangular plate-shaped component having a diagonal that is longer than the inner diameter of the edge ring Fa and shorter than the inner diameter of the cover ring Ca when viewed from above; alternatively, it can be a circular plate-shaped component with a diameter longer than the inner diameter of the edge ring Fa and shorter than the inner diameter of the cover ring Ca.

[0217] In the disassembly process of the edge ring Fa unit, firstly, all lifting components 405 are raised, and the cover ring C supporting the edge ring F is transferred from the upper surface 402a of the periphery of the electrostatic chuck 402 and the upper surface 403a of the support body 403 (i.e., the annular component placement surface of the wafer support stage 400) to the lifting components 405. Then, the lifting components 405 continue to rise, as... Figure 16 As shown, the covering ring Ca, which supports the edge ring Fa, moves upward.

[0218] Next, from the vacuum atmosphere transfer assembly 50 of the plasma processing system 1, a conveyor arm 71, which has been taken out of the processing assembly 60 and holds the jig J, is inserted into the depressurized plasma processing chamber 100 via the inlet / outlet (not shown). Then, as... Figure 17 As shown, the jig J, held by the conveying arm 71, moves between the upper surface 402a of the periphery of the electrostatic chuck 402, the upper surface 403a of the support 403, and the covering ring Ca supporting the edge ring Fa.

[0219] Next, the lifting pin 106, one example of the lifting component relative to the wafer W, is raised, as follows: Figure 18 As shown, the jig J is transferred from the conveyor arm 71 to the lifting pin 106.

[0220] Next, the conveyor arm 71 is withdrawn from the plasma processing chamber 100, i.e., retracted. Then, the lifting component 405 and the lifting pin 106 are moved relative to each other; specifically, only the lifting component 405 is lowered. Thus, as... Figure 19 As shown, the edge ring Fa is transferred from the cover ring Ca to the fixture J. Then, only the lifting member 405 is continuously lowered, thereby transferring the cover ring Ca from the lifting member 405 to the annular member mounting surface.

[0221] Next, a delivery arm 71 is inserted into the plasma processing chamber 100 via an inlet / outlet (not shown). Then, as... Figure 20 As shown, the conveyor arm 71 moves between the cover ring Ca and the fixture J supporting the edge ring Fa.

[0222] Next, lower the lifting pin 106, as follows: Figure 21 As shown, the jig J, which supports the edge ring Fa, is transferred from the lifting pin 106 to the conveying arm 71.

[0223] Then, the conveyor arm 71 is withdrawn from the plasma processing chamber 100 to deliver the fixture J supporting the edge ring Fa from the plasma processing chamber 100. The fixture J supporting the edge ring Fa is then stored in the storage assembly 62 via the conveyor arm 71. Thus, the disassembly process of a series of edge ring Fa units is completed.

[0224] Next, an example of the installation process of the edge ring Fa unit using the plasma processing system 1a will be described. Furthermore, the following processes are performed under the control of the control device 80. Additionally, as will be explained below, the jig J is used in the installation process of the edge ring Fa unit, similar to the disassembly process.

[0225] First, using the conveying arm 71 of the vacuum atmosphere transfer assembly 50 of the plasma processing system 1a, the fixture J supporting the edge ring Fa is removed from the receiving assembly 62 and held. Next, the conveying arm 71 holding the fixture J supporting the edge ring Fa is inserted into the depressurized plasma processing chamber 100 of the processing assembly 60 containing the object to be installed, via the inlet / outlet (not shown). Then, as... Figure 22 As shown, a jig J supporting an edge ring Fa is conveyed above the upper surface 104a of the central part of an electrostatic chuck 402 using a conveyor arm 71.

[0226] Next, the lifting pin 106 is raised, as follows: Figure 23 As shown, the jig J supporting the edge ring Fa is transferred from the conveyor arm 71 to the lifting pin 106.

[0227] Next, the conveyor arm 71 is withdrawn from the plasma processing chamber 100, and then the lifting component 405, which only supports the covering ring Ca, is raised, thereby... Figure 24 As shown, the jig J on the lifting pin 106 intersects with the edge ring Fa of the cover ring Ca.

[0228] Next, the delivery arm 71 is reinserted into the plasma processing chamber 100 via the inlet / outlet (not shown). Then, as... Figure 25 As shown, the conveying arm 71 moves between the upper surface (i.e. the substrate mounting surface) 104a of the central part of the electrostatic chuck 402 and the fixture J.

[0229] Next, lower the lifting pin 106, as follows: Figure 26 As shown, the jig J from the lifting pin 106 to the conveying arm 71 transfers the unsupported edge ring Fa.

[0230] Then, the conveying arm 71 is withdrawn from the plasma processing chamber 100, and the fixture J is delivered from the plasma processing chamber 100. The fixture J is then stored in the storage assembly 62 using the conveying arm 71.

[0231] In addition, the lifting component 405 is lowered, thereby, as Figure 27 As shown, the covering ring Ca supporting the edge ring Fa is mounted across the upper surface 402a of the periphery of the electrostatic chuck 402 and the upper surface 403a of the support body 403.

[0232] Therefore, the disassembly process of a series of edge ring Fa units was completed.

[0233] As described above, according to this embodiment, when replacing the edge ring Fa in the plasma processing system 1a using both the edge ring Fa and the cover ring Ca, the replacement can be selectively performed while the edge ring is supported by the cover ring Ca, and the replacement of the edge ring unit itself can also be performed. Furthermore, according to this embodiment, since the replacement of the edge ring Fa can be performed while it is supported by the cover ring Ca, i.e., both the edge ring Fa and the cover ring Ca can be replaced simultaneously, the time required for these replacements can be further reduced. Additionally, since a mechanism for raising and lowering the edge ring Fa is not required, cost reduction can be achieved. Furthermore, according to this embodiment, when only the edge ring Fa needs to be replaced and the cover ring Ca does not need to be replaced, even without a mechanism for directly raising and lowering the edge ring Fa, only the edge ring Fa can be replaced.

[0234] Alternatively, at least one of the cover ring Ca supporting the edge ring Fa and the fixture J can be housed in a container placed in the loading port 32.

[0235] Furthermore, the edge ring is an example of the first annular member described below, and the cover ring is an example of the second annular member described below. The first annular member is an annular member arranged to surround the substrate placed on the wafer support stage, and the second annular member is an annular member formed such that it overlaps with at least a portion of the first annular member when viewed from above. More specifically, the second annular member is configured to support the first annular member and is formed to overlap with at least a portion of the first annular member when viewed from above. The second annular member supports the first annular member, for example, in a state of being substantially concentric with the second annular member.

[0236] The technology of this embodiment has been described above using the example of an edge ring and a cover ring. However, the technology of this embodiment can be applied to a plasma processing system that uses the first annular component and the second annular component described above.

[0237] By applying the technology of this embodiment to a plasma processing system that uses these first and second annular components, it is possible to selectively replace the first annular component while it is supported by the second annular component, and to replace the first annular component individually, when replacing the first annular component.

[0238] The above descriptions illustrate various implementation methods, but are not limited to these examples. Various additions, omissions, substitutions, and modifications are possible. Furthermore, elements from different implementation methods can be combined to form other implementation methods.

[0239] In addition to the above implementation methods, the following notes are also disclosed.

[0240] [Note 1]

[0241] A substrate support stage, comprising:

[0242] The substrate mounting surface on which the substrate is placed;

[0243] The annular component mounting surface is mounted in a manner that surrounds the substrate held on the substrate mounting surface;

[0244] Three or more lifting pins are configured to extend from the mounting surface of the annular component and to rise and fall in an adjustable manner by the amount of extension from the mounting surface of the annular component; and

[0245] The lifting mechanism that raises and lowers the lifting pin.

[0246] On the bottom surface of the aforementioned annular component, at positions corresponding to the lifting pins, there are recesses formed by upwardly concave surfaces.

[0247] The curvature of the upper end of the lifting pin is greater than that of the concave part.

[0248] [Note 2]

[0249] According to Note 1, when viewed from above, the opening of the recess has a larger transport error than the annular component towards the surface on which the annular component is placed.

[0250] [Note 3]

[0251] According to the substrate support platform described in Note 1 or 2, the lifting mechanism allows the lifting pins to rise and fall independently.

Claims

1. A plasma processing system, characterized in that, include: A plasma processing apparatus having a substrate support stage and a depressurized processing container internally capable of housing the substrate support stage, the plasma processing apparatus performing plasma processing on a substrate on the substrate support stage. A conveying device having a support portion for supporting the substrate, wherein the substrate is fed into or out of the processing container by inserting or withdrawing the support portion into the processing container; and Control device, The substrate support stage has: The substrate mounting surface on which the substrate is placed; With the cover ring supporting the edge ring, the annular component mounting surface of the cover ring is placed, wherein the edge ring is configured to surround the substrate held on the substrate mounting surface, and the cover ring covers the outer side surface of the edge ring; A lifting component that extends in a manner that allows it to rise and fall in a way that it can extend from the portion of the covering ring that overlaps with the mounting surface of the annular component when viewed from above. A lifting mechanism that enables the lifting component to be raised and lowered; Other lifting components, which are capable of extending and lifting from the substrate mounting surface; and Other lifting mechanisms, which enable the other lifting components to rise and fall. The support portion of the conveying device is configured to support the cover ring that supports the edge ring, and to support a fixture having a portion longer than the inner diameter of the edge ring. The control device controls the lifting mechanism, the conveying device, and the other lifting mechanisms to perform the following steps: The step of raising the lifting component and transferring the covering ring supporting the edge ring from the annular component to the lifting component; The step of moving the fixture supported by the support portion between the substrate mounting surface and the annular component mounting surface and the cover ring supporting the edge ring; The step of raising the other lifting components and transferring the fixture from the support to the other lifting components; After the support portion retracts, the lifting component and the other lifting components move relative to each other, and the edge ring is transferred from the cover ring to the fixture. The step of lowering only the lifting component to transfer the cover ring from the lifting component to the mounting surface of the annular component; After moving the support portion between the cover ring and the fixture supporting the edge ring, the other lifting components are lowered to transfer the fixture supporting the edge ring from the other lifting components to the support portion; and The step of removing the support portion from the processing container to send the fixture supporting the edge ring out of the processing container.

2. A method for replacing an edge ring in a plasma processing system, characterized in that: The plasma processing system includes: A plasma processing apparatus comprising a substrate support stage and a depressurized processing container internally configured to house the substrate support stage, the plasma processing apparatus performing plasma processing on a substrate on the substrate support stage; and A conveying device having a support portion for supporting the substrate, wherein the substrate is fed into or out of the processing container by inserting or withdrawing the support portion into the processing container. The substrate support stage has: The substrate mounting surface on which the substrate is placed; With the cover ring supporting the edge ring, the annular component mounting surface of the cover ring is placed, wherein the edge ring is configured to surround the substrate held on the substrate mounting surface, and the cover ring covers the outer side surface of the edge ring; A lifting component that extends in a manner that allows it to rise and fall in a way that enables it to extend from the portion overlapping the cover ring when viewed from above the mounting surface of the annular component; and Other lifting components are designed to extend and rise from the substrate mounting surface. The method for replacing the edge ring includes the step of removing the edge ring. The steps for removing the edge ring include: The step of raising the lifting component and transferring the covering ring supporting the edge ring from the annular component to the lifting component; The step of moving the fixture supported by the support portion between the substrate mounting surface and the annular component mounting surface and the cover ring supporting the edge ring; The step of raising the other lifting components and transferring the fixture from the support to the other lifting components; After the support portion retracts, the lifting component and the other lifting components move relative to each other, and the edge ring is transferred from the cover ring to the fixture. The step of lowering only the lifting component to transfer the cover ring from the lifting component to the mounting surface of the annular component; After moving the support portion between the cover ring and the fixture supporting the edge ring, the other lifting components are lowered to transfer the fixture supporting the edge ring from the other lifting components to the support portion; and The step of removing the support portion from the processing container to send the fixture supporting the edge ring out of the processing container.

3. The method for replacing the edge ring according to claim 2, characterized in that: The step includes installing the edge ring. The steps for installing the edge ring include: The step of moving the fixture that supports the edge ring and is supported on the support portion above the substrate mounting surface; The step of raising the other lifting components and transferring the fixture supporting the edge ring from the support to the other lifting components; After the support portion retracts, the lifting component that only supports the cover ring is raised, and the edge ring is transferred from the fixture to the cover ring. After moving the support portion between the substrate mounting surface and the fixture, the other lifting components are lowered to transfer the fixture from the other lifting components to the support portion. The step of removing the support from the processing container to send the fixture out of the processing container; and The step of lowering the lifting component to place the cover ring supporting the edge ring on the mounting surface of the annular component.

4. The method for replacing the edge ring according to claim 2 or 3, characterized in that: Other steps include installing the edge ring. Other steps involved in installing the edge ring include: The step of conveying the cover ring, which is supported on the support portion and supports the edge ring, above the mounting surface of the annular component; The step of raising the lifting component and transferring the cover ring supporting the edge ring from the support to the lifting component; and After the support portion retracts, the lifting component is lowered, and the covering ring supporting the edge ring is placed on the mounting surface of the annular component.

5. The method for replacing the edge ring according to any one of claims 2 to 4, characterized in that: Including additional steps for removing the edge ring, Other steps in removing the edge ring include: The step of raising the lifting component and transferring the covering ring supporting the edge ring from the annular component to the lifting component; The steps are as follows: after moving the support portion between the cover ring and the mounting surface of the annular component, the lifting component is lowered to transfer the cover ring supporting the edge ring from the lifting component to the support portion; and The step of removing the support portion from the processing container to deliver the cover ring supporting the edge ring from the processing container.

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