Transfer method and device of light emitting diode chip and display screen

Abstract

The invention provides a light-emitting diode chip transfer method and device and a display screen, and the method comprises the steps: detecting a middle carrier plate carrying a plurality of light-emitting diode chips, determining a spectrum mapping graph corresponding to the middle carrier plate, and enabling the spectrum mapping graph to be used for reflecting the light-emitting parameters corresponding to the plurality of light-emitting diode chips, the light-emitting parameters comprise light-emitting wavelength and / or light-emitting brightness; performing rasterization processing on the spectral mapping graph to generate a processed spectral mapping graph; for each grid in the processed spectrum mapping graph, determining a luminescence index corresponding to the grid according to luminescence parameters of a plurality of light emitting diode chips in the grid; and transferring the plurality of light emitting diode chips in the grids on the middle carrier plate to a target carrier plate corresponding to the index range according to the index range to which the light emitting index corresponding to each grid belongs. According to the invention, the target carrier plate with consistent wavelength and / or consistent brightness can be obtained, so that the target carrier plate can be utilized to generate a display screen with a better display effect.

Description

Technical Field

[0001] This disclosure relates to the field of light-emitting diode technology, and more specifically, to a method, apparatus, and display screen for transferring light-emitting diode chips. Background Technology

[0002] Micro LED (Micro Light Emitting Diode) display technology refers to a display technology that uses self-emissive, micrometer-sized LEDs as light-emitting pixel units, assembling them onto a driving panel to form a high-density LED array. Due to the small size, high integration, and self-emissive nature of micro LED chips, they have significant advantages over LCD and OLED displays in terms of brightness, resolution, contrast ratio, energy consumption, lifespan, response speed, and thermal stability.

[0003] For display panels, the display is achieved by individual pixels controlling color and brightness to create an image. A perfect screen requires each pixel to achieve consistency in brightness and wavelength under the same conditions; that is, each pixel must have the same center wavelength and brightness at the same grayscale level. In MicroLED displays, this means ensuring the stability of the wavelength and brightness of each chip. Therefore, proposing a method to determine a wavelength-uniform LED carrier is particularly important. Summary of the Invention

[0004] This disclosure provides at least one method, apparatus, and display screen for transferring light-emitting diode chips.

[0005] In a first aspect, embodiments of this disclosure provide a method for transferring a light-emitting diode chip, comprising:

[0006] An intermediate carrier board carrying multiple light-emitting diode chips is tested to determine the spectral mapping map corresponding to the intermediate carrier board. The spectral mapping map is used to reflect the light emission parameters corresponding to the multiple light-emitting diode chips, and the light emission parameters include the emission wavelength and / or the emission brightness.

[0007] The spectral map is rasterized to generate a processed spectral map;

[0008] For each grid in the processed spectral mapping, the luminescence index corresponding to the grid is determined based on the luminescence parameters of the multiple light-emitting diode chips within the grid.

[0009] According to the index range to which the light emission index belongs to each of the grids, multiple light-emitting diode chips in the grids on the intermediate carrier are transferred to the target carrier corresponding to the index range, wherein different index ranges correspond to different target carriers.

[0010] In one optional implementation, the step of rasterizing the spectral map to generate a processed spectral map includes:

[0011] The spectral map is rasterized to obtain multiple grids on the spectral map;

[0012] The incomplete edge grids in the grid regions of the multiple grids are deleted to obtain the processed grid and the processed spectral map.

[0013] In one optional implementation, determining the light emission index corresponding to the grid based on the light emission parameters of the plurality of light-emitting diode chips within the grid includes:

[0014] When the light emission parameters include the light emission wavelength, the average wavelength or root mean square wavelength of the light emission parameters of the multiple light emission diode chips in the grid is determined, and the average wavelength or root mean square wavelength is determined as the light emission index corresponding to the grid.

[0015] When the light emission parameters include light emission brightness, the average brightness or root mean square brightness of the light emission parameters of multiple light emission diode chips in the grid is determined, and the average brightness or root mean square brightness is determined as the light emission index corresponding to the grid.

[0016] In one optional embodiment, when the light emission parameters include light emission wavelength and light emission brightness, the light emission index includes a light emission wavelength index and a light emission brightness index.

[0017] The step of transferring multiple light-emitting diode chips within the grids on the intermediate carrier board to the target carrier board corresponding to the index range, based on the index range to which the light-emitting index belongs for each grid, includes:

[0018] For each grid, a candidate carrier board corresponding to the grid is determined based on the emission wavelength index of the grid and the wavelength index range to which the emission wavelength index belongs;

[0019] Based on the luminance index of the grid and the luminance index range to which the luminance index belongs, the target carrier corresponding to the grid is determined from the candidate carriers;

[0020] The multiple light-emitting diode chips in the grid on the intermediate carrier are transferred to the target carrier corresponding to the index range.

[0021] In one optional implementation, the determination of multiple index ranges corresponding to the intermediate carrier plate is performed according to the following steps:

[0022] Determine the wavelength and brightness ranges of multiple light-emitting diode chips on the intermediate carrier board, as well as the set display accuracy indicators;

[0023] Based on the aforementioned display accuracy indicators, determine the wavelength division size and the brightness division size;

[0024] The wavelength range and the brightness range are divided according to the wavelength division size and the brightness division size to obtain the multiple index ranges.

[0025] In one optional implementation, before inspecting the intermediate carrier board carrying multiple light-emitting diode chips, the method further includes:

[0026] Obtain the target wafer on which multiple light-emitting diode chips have been fabricated;

[0027] The plurality of light-emitting diode chips on the target wafer are transferred to the intermediate carrier board.

[0028] Secondly, embodiments of this disclosure also provide a display screen composed of light-emitting diode chips on multiple target substrates, wherein the index ranges corresponding to the multiple target substrates are consistent; the target substrates are generated using the light-emitting diode chip transfer method described in the first aspect or any embodiment.

[0029] Thirdly, embodiments of this disclosure also provide a transfer device for a light-emitting diode chip, comprising:

[0030] The detection module is used to detect an intermediate carrier board carrying multiple light-emitting diode chips and determine the spectral mapping map corresponding to the intermediate carrier board. The spectral mapping map is used to reflect the light emission parameters corresponding to the multiple light-emitting diode chips respectively. The light emission parameters include the emission wavelength and / or the emission brightness.

[0031] The processing module is used to rasterize the spectral map to generate a processed spectral map;

[0032] The determination module is used to determine the luminescence index corresponding to each grid in the processed spectral mapping map based on the luminescence parameters of multiple light-emitting diode chips within the grid.

[0033] The transfer module is used to transfer multiple light-emitting diode chips in the grid on the intermediate carrier board to the target carrier board corresponding to the index range according to the index range to which the light-emitting index belongs for each grid, wherein different index ranges correspond to different target carrier boards.

[0034] In one optional implementation, the processing module, when performing rasterization processing on the spectral map to generate the processed spectral map, is used to:

[0035] The spectral map is rasterized to obtain multiple grids on the spectral map;

[0036] The incomplete edge grids in the grid regions of the multiple grids are deleted to obtain the processed grid and the processed spectral map.

[0037] In one optional implementation, the determining module, when determining the light emission index corresponding to the grid based on the light emission parameters of the plurality of light-emitting diode chips within the grid, is configured to:

[0038] When the light emission parameters include the light emission wavelength, the average wavelength or root mean square wavelength of the light emission parameters of the multiple light emission diode chips in the grid is determined, and the average wavelength or root mean square wavelength is determined as the light emission index corresponding to the grid.

[0039] When the light emission parameters include light emission brightness, the average brightness or root mean square brightness of the light emission parameters of multiple light emission diode chips in the grid is determined, and the average brightness or root mean square brightness is determined as the light emission index corresponding to the grid.

[0040] In one optional embodiment, when the light emission parameters include light emission wavelength and light emission brightness, the light emission index includes a light emission wavelength index and a light emission brightness index.

[0041] The transfer module, when transferring multiple LED chips within a grid on the intermediate carrier board to a target carrier board corresponding to the index range according to the index range to which the light emission index belongs for each grid, is configured to:

[0042] For each grid, a candidate carrier board corresponding to the grid is determined based on the emission wavelength index of the grid and the wavelength index range to which the emission wavelength index belongs;

[0043] Based on the luminance index of the grid and the luminance index range to which the luminance index belongs, the target carrier corresponding to the grid is determined from the candidate carriers;

[0044] The multiple light-emitting diode chips in the grid on the intermediate carrier are transferred to the target carrier corresponding to the index range.

[0045] In one optional implementation, the transfer module is configured to determine multiple index ranges corresponding to the intermediate carrier board according to the following steps:

[0046] Determine the wavelength and brightness ranges of multiple light-emitting diode chips on the intermediate carrier board, as well as the set display accuracy indicators;

[0047] Based on the aforementioned display accuracy indicators, determine the wavelength division size and the brightness division size;

[0048] The wavelength range and the brightness range are divided according to the wavelength division size and the brightness division size to obtain the multiple index ranges.

[0049] In one optional implementation, before inspecting the intermediate carrier board carrying multiple light-emitting diode chips, the inspection module is further configured to:

[0050] Obtain the target wafer on which multiple light-emitting diode chips have been fabricated;

[0051] The plurality of light-emitting diode chips on the target wafer are transferred to the intermediate carrier board.

[0052] Fourthly, an optional implementation of this disclosure also provides a computer device, a processor, and a memory, wherein the memory stores machine-readable instructions executable by the processor, and the processor is configured to execute the machine-readable instructions stored in the memory. When the machine-readable instructions are executed by the processor, the steps of the first aspect above, or any possible implementation of the first aspect, are performed.

[0053] Fifthly, an optional implementation of this disclosure also provides a computer-readable storage medium storing a computer program that, when run, performs the steps of the first aspect or any possible implementation of the first aspect.

[0054] It should be understood that the above general description and the following detailed description are merely exemplary and explanatory, and are not intended to limit the technical solutions of this disclosure.

[0055] This disclosure provides a method for transferring LED chips. The method involves detecting an intermediate carrier board carrying multiple LED chips to determine its corresponding spectral mapping. This spectral mapping reflects the emission parameters of the multiple LED chips, including emission wavelength and / or luminance. The spectral mapping is then rasterized to generate a processed spectral mapping. For each grid in the processed spectral mapping, a corresponding emission index is determined based on the emission parameters of the multiple LED chips within that grid. Based on the index range of each grid's emission index, the multiple LED chips within that grid are transferred to a target carrier board corresponding to that index range. Different index ranges correspond to different target carrier boards. This disclosure achieves binning through the above process, transferring LED chips within the same index range to the same target carrier board, ensuring consistent emission indices for the multiple LED chips on the target carrier board. This results in better display performance for the subsequent display screen generated using the target carrier board.

[0056] To make the above-mentioned objects, features and advantages of this disclosure more apparent and understandable, preferred embodiments are described below in detail with reference to the accompanying drawings. Attached Figure Description

[0057] To more clearly illustrate the technical solutions of the embodiments of this disclosure, the accompanying drawings used in the embodiments will be briefly described below. These drawings are incorporated in and constitute a part of this specification. They illustrate embodiments conforming to this disclosure and, together with the specification, serve to explain the technical solutions of this disclosure. It should be understood that the following drawings only show some embodiments of this disclosure and should not be considered as limiting the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0058] Figure 1 A diagram illustrating the display effect of a display screen in the related art is shown;

[0059] Figure 2 A flowchart illustrating a method for transferring a light-emitting diode chip according to some embodiments of the present disclosure is shown;

[0060] Figure 3 The diagram illustrates the transfer process in the LED chip transfer method provided in some embodiments of this disclosure;

[0061] Figure 4 Example diagrams are shown of spectral mapping maps and spectral mapping maps after grid processing in the light-emitting diode chip transfer method provided in some embodiments of this disclosure;

[0062] Figure 5 A schematic diagram of the grid transfer process in the transfer method for a light-emitting diode chip provided in some embodiments of this disclosure is shown;

[0063] Figure 6 A schematic diagram of a light-emitting diode chip transfer apparatus provided in some embodiments of the present disclosure is shown;

[0064] Figure 7 A schematic diagram of a computer device provided in some embodiments of the present disclosure is shown. Detailed Implementation

[0065] To make the objectives, technical solutions, and advantages of the embodiments of this disclosure clearer, the technical solutions of the embodiments of this disclosure will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this disclosure, and not all of them. The components of the embodiments of this disclosure described and shown herein can generally be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of this disclosure is not intended to limit the scope of the claimed disclosure, but merely represents selected embodiments of this disclosure. All other embodiments obtained by those skilled in the art based on the embodiments of this disclosure without inventive effort are within the scope of protection of this disclosure.

[0066] Micro LED (Micro Light Emitting Diode) display technology refers to a display technology that uses self-emissive, micrometer-sized LEDs as light-emitting pixel units, assembling them onto a driving panel to form a high-density LED array. Due to the small size, high integration, and self-emissive nature of micro LED chips, they have significant advantages over LCD and OLED displays in terms of brightness, resolution, contrast ratio, energy consumption, lifespan, response speed, and thermal stability.

[0067] For display panels, the display is achieved by individual pixels controlling color and brightness to create an image. A perfect screen requires each pixel to maintain consistent brightness and wavelength under the same conditions; that is, each pixel must have the same center wavelength and brightness at the same grayscale level. In Micro LED displays, this means ensuring the stability of the wavelength and brightness of each individual light-emitting diode (LED) chip.

[0068] For MicroLED displays, the industry typically requires that the wavelength range of each pixel's LED chip be ±0.5nm to ±1nm, with brightness exceeding a certain threshold. Under current conditions, the wavelength stability of COW wafers falls far short of these requirements. A wider wavelength range results in poor brightness consistency, leading to color differences, uneven brightness, and mura in different areas of the final display. Particularly during the partitioning and transfer of LED chips, the boundaries between blocks become distinct due to abrupt changes in wavelength and brightness, resulting in poor display quality. (See [link to relevant documentation]). Figure 1 As shown.

[0069] Based on the above research, this disclosure provides a method for transferring LED chips. The method involves detecting an intermediate carrier board carrying multiple LED chips to determine its corresponding spectral mapping. This spectral mapping reflects the emission parameters of the multiple LED chips, including emission wavelength and / or luminance. The spectral mapping is then rasterized to generate a processed spectral mapping. For each grid in the processed spectral mapping, an emission index is determined based on the emission parameters of the multiple LED chips within that grid. Based on the index range of each grid's emission index, the multiple LED chips within that grid are transferred to a target carrier board corresponding to that index range. Different index ranges correspond to different target carrier boards. This disclosure achieves binning through the above process, transferring LED chips within the same index range to the same target carrier board, ensuring consistent emission indices for the multiple LED chips on the target carrier board. This results in better display performance for the subsequent display screen generated using the target carrier board.

[0070] The above content is the result of the inventor's practice and careful research. Therefore, the discovery process of the above problems and the solutions proposed in this disclosure below should be considered as the inventor's contribution to this disclosure.

[0071] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.

[0072] To facilitate understanding of this embodiment, a detailed description of the LED chip transfer method disclosed in this disclosure is provided first. The execution entity of the LED chip transfer method provided in this disclosure is generally a computer device with certain computing capabilities. This computer device may include, for example, a terminal device, a server, or other processing devices. The terminal device can be a user equipment (UE), a mobile device, a user terminal, a handheld device, a computing device, etc. In some possible implementations, the LED chip transfer method can be implemented by a processor calling computer-readable instructions stored in memory.

[0073] See Figure 2 The diagram shows a flowchart of a method for transferring a light-emitting diode chip according to an embodiment of this disclosure. The method includes steps S201 to S204, wherein:

[0074] S201. Detect the intermediate carrier board carrying multiple light-emitting diode chips and determine the spectral mapping map corresponding to the intermediate carrier board, wherein the spectral mapping map is used to reflect the light emission parameters corresponding to the multiple light-emitting diode chips respectively, and the light emission parameters include light emission wavelength and / or light emission brightness;

[0075] S202. Rasterize the spectral mapping to generate a processed spectral mapping.

[0076] S203. For each grid in the processed spectral mapping, determine the luminous index corresponding to the grid based on the luminous parameters of the multiple light-emitting diode chips within the grid;

[0077] S204. According to the index range to which the light emission index belongs to each of the grids, transfer the multiple light-emitting diode chips in the grids on the intermediate carrier to the target carrier corresponding to the index range, wherein different index ranges correspond to different target carriers.

[0078] The following provides a detailed explanation of S201-S204.

[0079] In S201, multiple light-emitting diode (LED) chips are mounted on an intermediate carrier board. The intermediate carrier board is tested, for example, by photoluminescence (PL) or electroluminescence (EL) detection, to generate a spectral mapping map corresponding to the intermediate carrier board. The spectral mapping map can reflect the luminescence parameters of each LED chip, which may include emission wavelength and / or luminescence intensity.

[0080] Optionally, before inspecting the intermediate carrier board carrying multiple light-emitting diode chips, the method further includes: obtaining a target wafer on which multiple light-emitting diode chips are fabricated; and transferring the multiple light-emitting diode chips on the target wafer to the intermediate carrier board.

[0081] In practice, a target wafer with multiple LED chips can be generated. Then, these LED chips are transferred from the target wafer to an intermediate carrier. For example, laser transfer technology can be used to transfer multiple LED chips from the target wafer to the intermediate carrier, i.e., transferring chip-on-wafer (COW) to chip-on-carrier (COC). This COC is called the intermediate carrier. The transfer process is described in [reference needed]. Figure 3 As shown, an intermediate carrier board carrying multiple LED chips was obtained.

[0082] Compared with the process in related technologies where the target wafer is first detected to obtain a spectral mapping map and then multiple LED chips are transferred to an intermediate carrier board, this application first transfers multiple light-emitting diode chips from the target wafer to an intermediate carrier board and then determines the spectral mapping map. This avoids the influence of the transfer process on the spectral mapping map and ensures detection accuracy.

[0083] In S202, the spectral map is rasterized according to the set grid size, using the wafer position as a reference, to generate the processed spectral map. The grid size can be set according to the display accuracy requirements. For example, for higher display accuracy requirements, the grid size can be set smaller, resulting in more grids and a larger workload; conversely, for lower display accuracy requirements, the grid size can be set larger, resulting in fewer grids and a smaller workload. The minimum grid size is the area of ​​one chip. To balance efficiency and accuracy, the grid size can be set between 0.5-1mm.

[0084] In implementation, each grid in the processed spectral map can be assigned a corresponding grid number to facilitate grid transfer according to the grid number. See also Figure 4 As shown, Figure 4 The image shows both the spectral map and the rasterized spectral map.

[0085] Optionally, the step of rasterizing the spectral map to generate a processed spectral map includes: rasterizing the spectral map to obtain multiple grids on the spectral map; deleting incomplete edge grids in the multiple grids to obtain the processed grids and the processed spectral map.

[0086] During implementation, after rasterizing the spectral map to obtain multiple grids, considering the poor performance of LED chips in the edge grids, and to ensure the display effect of the subsequently generated display screen, incomplete edge grids in the grid areas can be deleted, resulting in the processed grids and the processed spectral map. See also... Figure 4 As shown, Figure 4 The edge grid cells that do not have numbers are the deleted grid cells.

[0087] In step S203, after generating the processed spectral map, for each grid in the processed spectral map, the luminous emission index corresponding to the grid is determined based on the luminous emission parameters of the multiple light-emitting diode chips within the grid, thus obtaining the luminous emission index corresponding to each grid. For example, when the luminous emission parameters include the emission wavelength, the luminous emission index can be the average wavelength; when the luminous emission parameters include the emission brightness, the luminous emission index can be the average brightness.

[0088] Optionally, the light emission index corresponding to the grid is determined based on the light emission parameters of the multiple light-emitting diode chips within the grid, including:

[0089] When the light emission parameters include the light emission wavelength, the average wavelength or root mean square wavelength of the light emission parameters of the multiple light-emitting diode chips in the grid is determined, and the average wavelength or root mean square wavelength is determined as the light emission index corresponding to the grid.

[0090] When the light emission parameters include light emission brightness, the average brightness or root mean square brightness of the light emission parameters of multiple light emission diode chips in the grid is determined, and the average brightness or root mean square brightness is determined as the light emission index corresponding to the grid.

[0091] When the light emission parameters include the light emission wavelength, for each grid, the average value of the light emission wavelengths of multiple light-emitting diode chips in the grid is determined to obtain the average wavelength, and the obtained average wavelength is determined as the light emission index corresponding to the grid; or, the root mean square value of the light emission wavelengths of multiple light-emitting diode chips in the grid is determined to obtain the root mean square wavelength, and the obtained root mean square wavelength is determined as the light emission index corresponding to the grid.

[0092] Similarly, when the light emission parameters include light emission brightness, for each grid, the average value of the light emission brightness of multiple light-emitting diode chips in the grid is determined to obtain the average brightness, and the obtained average brightness is determined as the light emission index corresponding to the grid; or, the root mean square value of the light emission brightness of multiple light-emitting diode chips in the grid is determined to obtain the root mean square brightness, and the obtained root mean square brightness is determined as the light emission index corresponding to the grid.

[0093] When the luminescence parameters include luminance and luminescence wavelength, the luminescence index may include average wavelength and average luminance, or it may include root mean square wavelength and root mean square luminance.

[0094] In S204, after determining the emission index corresponding to the grid, multiple index ranges can be determined, and the index range to which the grid's emission index belongs can be determined. For example, when the emission parameter includes the emission wavelength, the index range can be multiple wavelength ranges; when the emission parameter includes the emission brightness, the index range can be multiple brightness ranges. Taking the emission parameter as the emission wavelength as an example, a certain wavelength range is set as one bin (i.e., one index range). Assuming ±0.5nm is one bin, then 450~451 (excluding) is bin1, 451 (including)~452nm (excluding) is bin2, 452 (including)~453nm (excluding) is bin3, and so on. Thus, multiple divided bins, i.e., divided index ranges, can be obtained.

[0095] In this application, each grid corresponds to a grid number. Based on the index range (i.e., the bin) to which the grid's luminescence index belongs, the grid numbers belonging to the same bin are determined. Grids belonging to the same bin are then transferred to the target carrier matching that bin according to their grid numbers. Different index ranges (i.e., different bins) correspond to different target carriers. For example, laser transfer can be used to transfer LED chips within the same bin on the intermediate carrier to the corresponding target carrier until the transfer of LED chips on the intermediate carrier is complete.

[0096] When multiple intermediate carrier boards exist, for each intermediate carrier board, based on the indicator range of the light emission index corresponding to each grid and the grid number corresponding to each grid, multiple target grids on the intermediate carrier board that match the same target carrier board can be determined, i.e., target grids belonging to the same bin. Then, the LED chips of multiple grids on the intermediate carrier board are transferred to the corresponding target carrier board. After the LED chip transfer on the intermediate carrier board is completed, the process continues for the next intermediate carrier board until the LED chip transfer of multiple intermediate carrier boards is completed. If the target carrier board is filled during the transfer process, but there are still LED chips within the corresponding indicator range on the intermediate carrier board, a new target carrier board can be replaced to continue the transfer.

[0097] Alternatively, for each target carrier corresponding to a range of indicators, the LED chips in the target grids of multiple intermediate carriers that match the target carrier can be transferred to the target carrier in sequence until the target carrier is filled, resulting in multiple filled target carriers SCOC, such as target carrier SCOC-A corresponding to bin1, target carrier SCOC-B corresponding to bin2, target carrier SCOC-C corresponding to bin3, etc.

[0098] See Figure 5As shown, the intermediate carrier board COC-A can be transferred first, that is, the LED chips in the grids of different bins in COC-A can be transferred to the corresponding target carrier board. For example, the grids of Bin1 can be transferred to Bin1-SCOC-A1, and the grids of Bin2 can be transferred to Bin2-SCOC-A2, etc., completing the LED chip transfer of the intermediate carrier board COC-A. Then, the intermediate carrier board COC-B can be transferred, that is, the LED chips in the grids of different bins in COC-B can be transferred to the corresponding target carrier board. For example, the grids of Bin1 can be transferred to Bin1-SCOC-A1 to form Bin1-SCOC-B1, and the grids of Bin2 can be transferred to Bin2-SCOC-A2, etc., to form Bin2-SCOC-B2, completing the LED chip transfer of the intermediate carrier board COC-A. The intermediate carrier board can be transferred again until the target carrier board is full, resulting in the target carrier board Bin1-SCOC and the target carrier board Bin2-SCOC. Subsequently, SCOCs of the same bin can be transferred and soldered to generate display screens with good wavelength and / or brightness consistency.

[0099] The following is an illustrative description of the process for determining multiple index ranges. In implementation, the multiple index ranges corresponding to the intermediate carrier board can be determined according to the following steps: determining the wavelength range and brightness range of multiple light-emitting diode chips on the intermediate carrier board, and setting display accuracy indicators; determining the wavelength division size and brightness division size according to the display accuracy indicators; and dividing the wavelength range and the brightness range according to the wavelength division size and the brightness division size respectively to obtain the multiple index ranges.

[0100] The wavelength and brightness ranges of multiple LED chips on the intermediate carrier board are determined. For example, regarding wavelength parameters, the emission wavelengths of each LED chip on the intermediate carrier board are statistically analyzed, and the wavelength range is determined based on the maximum and minimum emission wavelengths; alternatively, the wavelength range can be determined based on the wavelength proportion of each LED chip; or, the wavelength range can be determined based on production requirements during LED chip fabrication or business needs on the display screen side. Similarly, the process for determining the brightness range can refer to the aforementioned process for determining the wavelength range.

[0101] Display accuracy indicators can refer to the required display accuracy level and display requirements on the display screen side. During implementation, a mapping relationship can be set between the display accuracy indicators and the partition dimensions. Based on this mapping relationship, the wavelength partition dimensions and brightness partition dimensions corresponding to the intermediate carrier board are determined. The display accuracy indicators and partition dimensions are inversely proportional; for example, the higher the required accuracy, the smaller the partition dimensions.

[0102] Taking wavelength as an example, the wavelength division size can be 0.5nm, 1nm, 1.5nm, 2nm, etc. In implementation, the wavelength division size can also be determined based on the wavelength range. For example, when the wavelength range is large, a larger size is selected from multiple division sizes that meet the accuracy requirements, resulting in fewer bins; when the wavelength range is small, a smaller size is selected from multiple division sizes that meet the accuracy requirements, resulting in more bins and higher accuracy.

[0103] Next, according to the determined wavelength division size, the wavelength range is divided to obtain multiple index ranges (i.e., wavelength index ranges) for the wavelength parameters corresponding to the intermediate carrier. For example, if the wavelength range is 460nm to 470nm and the wavelength division size is 1nm, then multiple wavelength division ranges can include: 460nm-461nm (inclusive of 460nm but exclusive of 461nm), 461nm-462nm (inclusive of 461nm but exclusive of 462nm), ..., 469nm-470nm (inclusive of both 469nm and 470nm), that is, 460nm-461nm is one bin, and 461nm-462nm is one bin. The determination of the brightness division size can be found in the explanation of the wavelength division size, which will not be detailed here.

[0104] By using display accuracy indicators, the wavelength division size and brightness division size can be determined more accurately. Based on the wavelength division size and brightness division size, an indicator range that meets the display requirements can be obtained, and subsequently, a target carrier board with relatively consistent brightness and wavelength can be obtained.

[0105] Optionally, when the light emission parameters include light emission wavelength and light emission brightness, the light emission index includes a light emission wavelength index and a light emission brightness index. The step of transferring multiple LED chips within a grid on the intermediate carrier board to a target carrier board corresponding to the index range based on the index range to which the light emission index belongs for each grid includes: for each grid, determining a candidate carrier board corresponding to the grid based on the grid's light emission wavelength index and the wavelength index range to which the light emission wavelength index belongs; determining a target carrier board corresponding to the grid from the candidate carrier boards based on the grid's light emission brightness index and the brightness index range to which the light emission brightness index belongs; and transferring multiple LED chips within a grid on the intermediate carrier board to the target carrier board corresponding to the index range.

[0106] In practice, when the luminescence index includes the luminescence wavelength index and the luminescence brightness index, each target carrier is associated with a wavelength index range and a brightness index range. Different target carriers are associated with different wavelength index ranges and / or brightness index ranges.

[0107] For each grid on the intermediate carrier board, a candidate carrier board corresponding to the grid is determined based on the grid's emission wavelength index and the wavelength index range to which the emission wavelength index belongs. Then, based on the grid's emission brightness index and the brightness index range to which the emission brightness index belongs, a target carrier board corresponding to the grid is determined from the candidate carrier boards, that is, a target carrier board that meets the requirements of brightness range and wavelength range is determined. Then, multiple light-emitting diode chips in the grid on the intermediate carrier board are transferred to the target carrier board corresponding to the index range to obtain a target carrier board with consistent brightness and wavelength.

[0108] Optionally, when the light emission parameters include the emission wavelength but not the light emission brightness, the corresponding target substrate can be determined based on the emission wavelength index of the grid. Then, the LED chips within the grid are transferred to the corresponding target substrate to obtain a target substrate that satisfies wavelength consistency. After constructing the display screen using the LED chips on the target substrate, the brightness of the display screen can be adjusted by regulating the current to achieve brightness consistency. Considering that brightness can be adjusted by current, this application preferably uses the emission wavelength as the light emission parameter for subsequent binning processing.

[0109] For example, the intermediate carrier board can be inspected to determine the emission wavelength and brightness of the LED chips. The emission wavelength is used as the binning standard, and the brightness is used as the transfer standard for transferring and arranging the LED chips. For instance, after determining the emission wavelength and brightness of the LED chips, the spectral map is rasterized to generate a processed spectral map. For each grid in the processed spectral map, the emission wavelength index corresponding to the grid is determined based on the emission wavelengths of the multiple LED chips within the grid. Then, based on the emission wavelength index of each grid, the corresponding bin is determined, and the LED chips within the grid are transferred to the target carrier board (SCOC) matching that bin according to the corresponding brightness. For example, in the target carrier board (SCOC), LED chips with different brightness can be arranged adjacently to achieve brightness balance; or, LEDs with the same brightness can be arranged adjacently so that the brightness of the LED chips can be easily adjusted later by current.

[0110] This application creates a target carrier board (SCOC) during the transfer process, resulting in binned target carrier boards. This ensures that the LED chips on the target carrier board have brightness and / or wavelength consistency. Consequently, when a display screen is constructed using the LED chips on the target carrier board, the final display panel can achieve better display effects with better wavelength consistency and / or better brightness consistency.

[0111] This disclosure also provides a display screen composed of light-emitting diode chips on multiple target substrates, wherein the multiple target substrates correspond to the same index range, and the target substrates are generated using the aforementioned light-emitting diode chip transfer method.

[0112] In practice, the aforementioned LED chip transfer method can be used to obtain multiple target carrier boards, such as multiple SCOC-A boards (e.g., SCOC-A1, SCOC-A2, etc.), multiple SCOC-B boards, multiple SCOC-C boards, etc. Combining target carrier boards with consistent performance ranges can yield a display screen. For example, SCOC-A1 and SCOC-A2 boards can form a display screen with balanced wavelength and / or brightness, and multiple SCOC-B boards can also form a display screen with balanced wavelength and / or brightness, etc.

[0113] Through the above process, a display screen with uniform wavelength and / or brightness can be generated, resulting in a better display effect.

[0114] Those skilled in the art will understand that, in the above-described method of the specific implementation, the order in which each step is written does not imply a strict execution order and does not constitute any limitation on the implementation process. The specific execution order of each step should be determined by its function and possible internal logic.

[0115] Based on the same inventive concept, this disclosure also provides a light-emitting diode chip transfer device corresponding to the light-emitting diode chip transfer method. Since the principle of the device in this disclosure for solving the problem is similar to the light-emitting diode chip transfer method described above in this disclosure, the implementation of the device can refer to the implementation of the method, and the repeated parts will not be described again.

[0116] Reference Figure 6 The diagram shown is a schematic of a light-emitting diode chip transfer device provided in an embodiment of this disclosure, wherein the device includes:

[0117] The detection module 601 is used to detect an intermediate carrier board carrying multiple light-emitting diode chips and determine the spectral mapping map corresponding to the intermediate carrier board. The spectral mapping map is used to reflect the light emission parameters corresponding to the multiple light-emitting diode chips respectively. The light emission parameters include the light emission wavelength and / or the light emission brightness.

[0118] Processing module 602 is used to perform rasterization processing on the spectral map to generate a processed spectral map;

[0119] The determining module 603 is used to determine the luminescence index corresponding to each grid in the processed spectral mapping based on the luminescence parameters of multiple light-emitting diode chips within the grid.

[0120] The transfer module 604 is used to transfer multiple light-emitting diode chips in the grid on the intermediate carrier to the target carrier corresponding to the index range according to the index range to which the light-emitting index belongs for each grid, wherein different index ranges correspond to different target carriers.

[0121] In one possible implementation, the processing module 602, when performing rasterization processing on the spectral map to generate the processed spectral map, is used to:

[0122] The spectral map is rasterized to obtain multiple grids on the spectral map;

[0123] The incomplete edge grids in the grid regions of the multiple grids are deleted to obtain the processed grid and the processed spectral map.

[0124] In one possible implementation, the determining module 603, when determining the light emission index corresponding to the grid based on the light emission parameters of the plurality of light-emitting diode chips within the grid, is used to:

[0125] When the light emission parameters include the light emission wavelength, the average wavelength or root mean square wavelength of the light emission parameters of the multiple light emission diode chips in the grid is determined, and the average wavelength or root mean square wavelength is determined as the light emission index corresponding to the grid.

[0126] When the light emission parameters include light emission brightness, the average brightness or root mean square brightness of the light emission parameters of multiple light emission diode chips in the grid is determined, and the average brightness or root mean square brightness is determined as the light emission index corresponding to the grid.

[0127] In one possible implementation, when the light emission parameters include light emission wavelength and light emission brightness, the light emission index includes a light emission wavelength index and a light emission brightness index;

[0128] The transfer module 604, when transferring multiple light-emitting diode chips within the grids on the intermediate carrier board to the target carrier board corresponding to the index range according to the index range to which the light-emitting index belongs for each grid, is used for:

[0129] For each grid, a candidate carrier board corresponding to the grid is determined based on the emission wavelength index of the grid and the wavelength index range to which the emission wavelength index belongs;

[0130] Based on the luminance index of the grid and the luminance index range to which the luminance index belongs, the target carrier corresponding to the grid is determined from the candidate carriers;

[0131] The multiple light-emitting diode chips in the grid on the intermediate carrier are transferred to the target carrier corresponding to the index range.

[0132] In one possible implementation, the transfer module 604 is used to determine multiple index ranges corresponding to the intermediate carrier plate according to the following steps:

[0133] Determine the wavelength and brightness ranges of multiple light-emitting diode chips on the intermediate carrier board, as well as the set display accuracy indicators;

[0134] Based on the aforementioned display accuracy indicators, determine the wavelength division size and the brightness division size;

[0135] The wavelength range and the brightness range are divided according to the wavelength division size and the brightness division size to obtain the multiple index ranges.

[0136] In one possible implementation, before inspecting the intermediate carrier board carrying multiple light-emitting diode chips, the inspection module 601 is further configured to:

[0137] Obtain the target wafer on which multiple light-emitting diode chips have been fabricated;

[0138] The plurality of light-emitting diode chips on the target wafer are transferred to the intermediate carrier board.

[0139] The processing flow of each module in the device and the interaction flow between each module can be referred to the relevant descriptions in the above method embodiments, and will not be detailed here.

[0140] This disclosure also provides a computer device, such as... Figure 7 The diagram shown is a schematic representation of a computer device structure provided in an embodiment of this disclosure, including:

[0141] A processor 71 and a memory 72; the memory 72 stores machine-readable instructions executable by the processor 71, and the processor 71 executes the machine-readable instructions stored in the memory 72. When the machine-readable instructions are executed by the processor 71, the processor 71 performs the following steps:

[0142] An intermediate carrier board carrying multiple light-emitting diode chips is tested to determine the spectral mapping map corresponding to the intermediate carrier board. The spectral mapping map is used to reflect the light emission parameters corresponding to the multiple light-emitting diode chips, and the light emission parameters include the emission wavelength and / or the emission brightness.

[0143] The spectral map is rasterized to generate a processed spectral map;

[0144] For each grid in the processed spectral mapping, the luminescence index corresponding to the grid is determined based on the luminescence parameters of the multiple light-emitting diode chips within the grid.

[0145] According to the index range to which the light emission index belongs to each of the grids, multiple light-emitting diode chips in the grids on the intermediate carrier are transferred to the target carrier corresponding to the index range, wherein different index ranges correspond to different target carriers.

[0146] The aforementioned memory 72 includes a main memory 721 and an external memory 722; the main memory 721, also known as internal memory, is used to temporarily store the computational data in the processor 71, as well as the data exchanged with external memory 722 such as a hard disk. The processor 71 exchanges data with the external memory 722 through the main memory 721.

[0147] The specific execution process of the above instructions can be referred to the steps of the LED chip transfer method described in the embodiments of this disclosure, and will not be repeated here.

[0148] This disclosure also provides a computer-readable storage medium storing a computer program that, when executed by a processor, performs the steps of the LED chip transfer method described in the above-described method embodiments. The storage medium can be a volatile or non-volatile computer-readable storage medium.

[0149] This disclosure also provides a computer program product carrying program code. The program code includes instructions that can be used to execute the steps of the LED chip transfer method described in the above method embodiments. For details, please refer to the above method embodiments, which will not be repeated here.

[0150] The aforementioned computer program product can be implemented through hardware, software, or a combination thereof. In one optional embodiment, the computer program product is specifically embodied in a computer storage medium; in another optional embodiment, the computer program product is specifically embodied in a software product, such as a software development kit (SDK), etc.

[0151] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the specific working processes of the systems and devices described above can be referred to the corresponding processes in the foregoing method embodiments, and will not be repeated here. In the several embodiments provided in this disclosure, it should be understood that the disclosed systems, devices, and methods can be implemented in other ways. The device embodiments described above are merely illustrative. For example, the division of units is only a logical functional division; in actual implementation, there may be other division methods. Furthermore, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Another point is that the displayed or discussed mutual coupling or direct coupling or communication connection may be through some communication interfaces; the indirect coupling or communication connection of devices or units may be electrical, mechanical, or other forms.

[0152] The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.

[0153] In addition, the functional units in the various embodiments of this disclosure can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit.

[0154] If the aforementioned functions are implemented as software functional units and sold or used as independent products, they can be stored in a processor-executable, non-volatile, computer-readable storage medium. Based on this understanding, the technical solution of this disclosure, in essence, or the part that contributes to the prior art, or a portion of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods described in the various embodiments of this disclosure. The aforementioned storage medium includes various media capable of storing program code, such as USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical disks.

[0155] Finally, it should be noted that the above-described embodiments are merely specific implementations of this disclosure, used to illustrate the technical solutions of this disclosure, and not to limit it. The protection scope of this disclosure is not limited thereto. Although this disclosure has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that any person skilled in the art can still modify or easily conceive of changes to the technical solutions described in the foregoing embodiments, or make equivalent substitutions for some of the technical features, within the scope of the technology disclosed in this disclosure. Such modifications, changes, or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this disclosure, and should all be covered within the protection scope of this disclosure. Therefore, the protection scope of this disclosure should be determined by the protection scope of the claims.

Claims

1. A method for transferring a light-emitting diode chip, characterized in that, include: An intermediate carrier board carrying multiple light-emitting diode chips is tested to determine the spectral mapping map corresponding to the intermediate carrier board. The spectral mapping map is used to reflect the light emission parameters corresponding to the multiple light-emitting diode chips, and the light emission parameters include the emission wavelength and / or the emission brightness. The spectral map is rasterized to generate a processed spectral map; For each grid in the processed spectral mapping, the luminescence index corresponding to the grid is determined based on the luminescence parameters of the multiple light-emitting diode chips within the grid. According to the index range to which the light emission index belongs to each of the grids, multiple light-emitting diode chips in the grids on the intermediate carrier are transferred to the target carrier corresponding to the index range, wherein different index ranges correspond to different target carriers.

2. The method according to claim 1, characterized in that, The step of rasterizing the spectral map to generate a processed spectral map includes: The spectral map is rasterized to obtain multiple grids on the spectral map; The incomplete edge grids in the grid regions of the multiple grids are deleted to obtain the processed grid and the processed spectral map.

3. The method according to claim 1, characterized in that, Based on the light emission parameters of the multiple LED chips within the grid, the light emission index corresponding to the grid is determined, including: When the light emission parameters include the light emission wavelength, the average wavelength or root mean square wavelength of the light emission parameters of the multiple light emission diode chips in the grid is determined, and the average wavelength or root mean square wavelength is determined as the light emission index corresponding to the grid. When the light emission parameters include light emission brightness, the average brightness or root mean square brightness of the light emission parameters of multiple light emission diode chips in the grid is determined, and the average brightness or root mean square brightness is determined as the light emission index corresponding to the grid.

4. The method according to any one of claims 1-3, characterized in that, When the luminescence parameters include luminescence wavelength and luminescence brightness, the luminescence index includes luminescence wavelength index and luminescence brightness index; The step of transferring multiple light-emitting diode chips within the grids on the intermediate carrier board to the target carrier board corresponding to the index range, based on the index range to which the light-emitting index belongs for each grid, includes: For each grid, a candidate carrier board corresponding to the grid is determined based on the emission wavelength index of the grid and the wavelength index range to which the emission wavelength index belongs; Based on the luminance index of the grid and the luminance index range to which the luminance index belongs, the target carrier corresponding to the grid is determined from the candidate carriers; The multiple light-emitting diode chips in the grid on the intermediate carrier are transferred to the target carrier corresponding to the index range.

5. The method according to claim 4, characterized in that, The following steps are used to determine multiple index ranges corresponding to the intermediate carrier plate, including: Determine the wavelength and brightness ranges of multiple light-emitting diode chips on the intermediate carrier board, as well as the set display accuracy indicators; Based on the aforementioned display accuracy indicators, determine the wavelength division size and the brightness division size; The wavelength range and the brightness range are divided according to the wavelength division size and the brightness division size to obtain the multiple index ranges.

6. The method according to claim 1, characterized in that, Before inspecting the intermediate carrier board carrying multiple light-emitting diode chips, the method further includes: Obtain the target wafer on which multiple light-emitting diode chips have been fabricated; The plurality of light-emitting diode chips on the target wafer are transferred to the intermediate carrier board.

7. A display screen, characterized in that, It consists of light-emitting diode chips on multiple target substrates, and the target substrates have the same index range; the target substrates are generated using the light-emitting diode chip transfer method according to any one of claims 1 to 6.

8. A transfer device for a light-emitting diode chip, characterized in that, include: The detection module is used to detect an intermediate carrier board carrying multiple light-emitting diode chips and determine the spectral mapping map corresponding to the intermediate carrier board. The spectral mapping map is used to reflect the light emission parameters corresponding to the multiple light-emitting diode chips respectively. The light emission parameters include the emission wavelength and / or the emission brightness. The processing module is used to rasterize the spectral map to generate a processed spectral map; The determination module is used to determine the luminescence index corresponding to each grid in the processed spectral mapping map based on the luminescence parameters of multiple light-emitting diode chips within the grid. The transfer module is used to transfer multiple light-emitting diode chips in the grid on the intermediate carrier board to the target carrier board corresponding to the index range according to the index range to which the light-emitting index belongs for each grid, wherein different index ranges correspond to different target carrier boards.

9. A computer device, characterized in that, include: The processor and the memory, the memory storing machine-readable instructions executable by the processor, the processor executing the machine-readable instructions stored in the memory, and when the machine-readable instructions are executed by the processor, the processor performing the steps of the transfer method for a light-emitting diode chip as described in any one of claims 1 to 6.

10. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores a computer program, which, when executed by a computer device, performs the steps of the method for transferring a light-emitting diode chip as described in any one of claims 1 to 6.

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