TGV adapter plate and preparation method thereof
By using double-sided laser processing and thinning technology to form staggered through-holes and metal pillars on a glass substrate, the high-density problem in the existing TGV adapter board fabrication was solved, and the fabrication of a high-performance TGV adapter board was realized.
Patent Information
- Application Number
- CN202410876405.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-07-01
- Publication Date
- 2026-01-09
AI Technical Summary
Existing TGV adapter board manufacturing methods are difficult to apply to high-density, high-performance products. The glass through-holes formed by laser method are conical, resulting in overlapping at the top of the holes, which makes it impossible to achieve high-density settings.
Interlaced blind vias are formed on a glass substrate using a double-sided laser method. The blind vias are then converted into through vias through a thinning process. Interlaced TGV metal pillars are formed by chemical plating or electroplating. Finally, a redistribution layer is formed on both sides of the glass substrate.
This technology enables the fabrication of high-performance TGV adapter boards with small spacing and small CD size on glass substrates, avoiding metal pillar overlap and making them suitable for high-density setups.
Smart Images
Figure CN121311035A_ABST
Abstract
Description
Technical Field
[0001] This invention belongs to the field of semiconductor technology and relates to a TGV adapter plate and its preparation method. Background Technology
[0002] In semiconductor 2.5D / 3D packaging, organic interposers, through-silicon via (TSV) interposers, and through-glass via (TGV) interposers are the mainstream interposer materials. The main purpose of setting up interposers is to solve some challenges in semiconductor packaging, such as improving integration, reducing costs, and improving electrical performance.
[0003] Glass is an insulating material with a low dielectric constant (about 1 / 3 that of silicon), a small loss factor (about 2 to 3 orders of magnitude smaller than silicon), and excellent high-frequency performance. This allows glass to significantly reduce insertion loss and crosstalk at high frequencies. Therefore, glass-based TGV adapter boards have been widely used in the field of radio frequency integration.
[0004] However, a key problem facing TGV technology is the lack of a deep etching process similar to that of silicon, making it difficult to quickly fabricate high aspect ratio glass deep holes or trenches. Traditional TGV adapter board fabrication methods include sandblasting, mechanical drilling, dry etching, wet etching, focused discharge, and laser methods. However, all of these methods have significant drawbacks. Currently, the most widely used method is the laser method. However, because the energy curve emitted by the laser itself is a Gaussian energy curve, the glass vias formed by the laser method are conical and cannot form 90° vertical straight holes. Therefore, when creating high-density vias, an over-layer phenomenon may occur at the top of the holes, causing contact between the metal filling in adjacent vias. To avoid the over-layer phenomenon, the pitch between adjacent TGV vias needs to be increased. Thus, the existing laser method cannot be applied to the fabrication of high-density, high-performance products.
[0005] Therefore, it is necessary to provide a TGV adapter plate and its preparation method. Summary of the Invention
[0006] In view of the shortcomings of the prior art described above, the purpose of this invention is to provide a TGV adapter plate and its preparation method, so as to solve the problem that TGV is difficult to apply to high-density, high-performance products in the prior art.
[0007] To achieve the above and other related objectives, the present invention provides a method for preparing a TGV adapter plate, comprising the following steps:
[0008] A glass substrate is provided, the glass substrate including a first surface and a second surface disposed opposite to each other;
[0009] A first blind hole with its bottom located in the glass substrate is formed from a first surface using a first laser method, and a second blind hole with its bottom located in the glass substrate is formed from a second surface using a second laser method.
[0010] Thinning processes are performed on the first and second surfaces of the glass substrate respectively, so that the first blind hole is transformed into a first through hole that penetrates the glass substrate from top to bottom, and the second blind hole is transformed into a second through hole that penetrates the glass substrate from bottom to top, and the first through hole and the second through hole are staggered.
[0011] A first TGV metal pillar is formed in the first through hole to fill the first through hole, and a second TGV metal pillar is formed in the second through hole to fill the second through hole;
[0012] A first redistribution layer is formed on a first surface of the glass substrate, and a second redistribution layer is formed on a second surface of the glass substrate, wherein the first redistribution layer and the second redistribution layer are respectively electrically connected to the first TGV metal pillar and the second TGV metal pillar.
[0013] Optionally, the first laser method includes laser ablation or laser-induced denaturation etching; the second laser method includes laser ablation or laser-induced denaturation etching.
[0014] Optionally, the first TGV metal pillar and the second TGV metal pillar are formed simultaneously, wherein the method for forming the first TGV metal pillar and the second TGV metal pillar includes chemical plating or electroplating.
[0015] Optionally, the method for forming the first redistribution layer on the first surface of the glass substrate includes a semiconductor process or a substrate bonding method; the method for forming the second redistribution layer on the second surface of the glass substrate includes a semiconductor process or a substrate bonding method.
[0016] Optionally, the distance between adjacent first through holes and second through holes ranges from 30 to 100 μm.
[0017] Optionally, the CD size of the first TGV metal column is 40-50 μm; the CD size of the second TGV metal column is 40-50 μm.
[0018] Optionally, the thickness of the glass substrate before thinning is 200-300 μm; the thickness of the glass substrate after thinning is 100-200 μm.
[0019] The present invention also provides a TGV adapter board, the TGV adapter board comprising:
[0020] A glass substrate, the glass substrate comprising a first surface and a second surface disposed opposite to each other;
[0021] A first through hole extends from the first surface of the glass substrate downwards through the glass substrate; a second through hole extends from the second surface of the glass substrate downwards through the glass substrate; and the first through hole and the second through hole are staggered.
[0022] The method for preparing the first through hole and the second through hole is as follows:
[0023] A first blind hole with its bottom located in the glass substrate is formed from a first surface using a first laser method, and a second blind hole with its bottom located in the glass substrate is formed from a second surface using a second laser method.
[0024] Thinning processes are performed on the first surface and the second surface of the glass substrate respectively, so that the first blind hole is transformed into the first through hole, and the second blind hole is transformed into the second through hole;
[0025] The first TGV metal pillar fills the first through hole;
[0026] The second TGV metal pillar fills the second through hole;
[0027] A first redistribution layer is located on a first surface of the glass substrate, and the first redistribution layer is electrically connected to both the first TGV metal pillar and the second TGV metal pillar.
[0028] The second redistribution layer is located on the second surface of the glass substrate and is electrically connected to both the first TGV metal pillar and the second TGV metal pillar.
[0029] Optionally, the distance between adjacent first TGV metal pillars and second TGV metal pillars ranges from 30 to 100 μm; the CD dimension of the first TGV metal pillar is 40 to 50 μm; and the CD dimension of the second TGV metal pillar is 40 to 50 μm.
[0030] Optionally, the first TGV metal column and the second TGV metal column have the same morphology.
[0031] As described above, the TGV adapter board and its preparation method of the present invention employ a first laser method to form a first blind hole with its bottom located on a glass substrate, and a second laser method to form a second blind hole with its bottom located on a glass substrate. Then, a thinning process is performed on the first surface and the second surface of the glass substrate, respectively, so that the first blind hole is transformed into a first through hole and the second blind hole is transformed into a second through hole. The first through hole and the second through hole are staggered. Thus, the present application can prepare a high-performance TGV adapter board with a smaller spacing, smaller CD size, thinner profile, suitable for high-density installation, and effectively avoid metal pillar overlap on a glass substrate based on the laser method and the thinning process. Attached Figure Description
[0032] Figure 1 The diagram shows a process flow chart for preparing the TGV adapter board in an embodiment of the present invention.
[0033] Figure 2 The diagram shown is a structural schematic after the formation of the first blind hole in an embodiment of the present invention.
[0034] Figure 3 The diagram shown is a structural schematic after the formation of the second blind hole in an embodiment of the present invention.
[0035] Figure 4 The diagram shown is a structural schematic of the first and second through holes formed by the thinning process in an embodiment of the present invention.
[0036] Figure 5 The diagram shown is a structural schematic of the first TGV metal column and the second TGV metal column after they are formed in an embodiment of the present invention.
[0037] Figure 6 The diagram shown is a structural schematic of the first and second redistribution layers after they have been formed in an embodiment of the present invention.
[0038] Explanation of reference numerals in the attached figures
[0039] 100 glass substrate
[0040] 101 First blind hole
[0041] 102 Second blind hole
[0042] 111 First Through Hole
[0043] 112 Second Through Hole
[0044] 201 First TGV Metal Column
[0045] 202 Second TGV Metal Column
[0046] 301 First Rerouting Layer
[0047] 302 Second Rerouting Layer Detailed Implementation
[0048] The following specific examples illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.
[0049] In the detailed description of embodiments of the present invention, for ease of explanation, the cross-sectional views illustrating the device structure may be partially enlarged and not to scale. Furthermore, the schematic diagrams are merely examples and should not limit the scope of protection of the present invention. In actual fabrication, the three-dimensional spatial dimensions of length, width, and depth should be included.
[0050] For ease of description, spatial relation terms such as “below,” “under,” “lower than,” “below,” “above,” and “upper” may be used herein to describe the relationship between one element or feature shown in the accompanying drawings and other elements or features. It will be understood that these spatial relation terms are intended to include orientations of the device in use or operation other than those depicted in the drawings, and may include embodiments in which the first and second features are formed in direct contact, or embodiments in which additional features are formed between the first and second features, such that the first and second features may not be in direct contact. Furthermore, when a layer is referred to as “between” two layers, it may be the only layer between the two layers, or there may be one or more layers in between.
[0051] It should be noted that the illustrations provided in this embodiment are only schematic representations of the basic concept of the present invention. Therefore, the illustrations only show the components related to the present invention and are not drawn according to the actual number, shape and size of the components in the actual implementation. In the actual implementation, the form, quantity and proportion of each component can be arbitrarily changed, and the layout of the components may also be more complex.
[0052] See Figure 1 This embodiment provides a method for preparing a TGV adapter plate, which can be prepared on a glass substrate using laser method and thinning process. The TGV adapter plate has a smaller pitch, smaller critical dimension (CD), is thinner, suitable for high-density installation, and can effectively avoid the overlapping of metal pillars.
[0053] The following is in conjunction with the appendix Figures 2-6 The fabrication of the TGV adapter plate is further described below, specifically including:
[0054] First, refer to Figure 1 and Figure 2Step S1 is executed, providing a glass substrate 100, the glass substrate 100 including a first surface and a second surface disposed opposite to each other.
[0055] Specifically, the glass substrate 100 may include a wafer-level glass substrate, such as 4-inch, 6-inch, 8-inch, 12-inch, etc. The thickness of the glass substrate 100 may be 200-300μm, such as 200μm, 250μm, 300μm, etc. However, the size of the glass substrate 100 is not limited to this and can be set as needed. No excessive restrictions are imposed here.
[0056] Next, refer to Figure 1 , Figure 2 and Figure 3 In step S2, a first blind hole 101 with its bottom located in the glass substrate 100 is formed from the first surface of the glass substrate 100 using a first laser method, and a second blind hole 102 with its bottom located in the glass substrate 100 is formed from the second surface of the glass substrate 100 using a second laser method.
[0057] The first laser method may include laser ablation or laser-induced denaturation etching; similarly, the second laser method may include laser ablation or laser-induced denaturation etching. Preferably, the first and second laser methods employ the same preparation method to reduce process complexity and facilitate process management and operation. However, this is not a limitation; different preparation methods may be used for the first and second laser methods as needed. Specific operations of laser ablation and laser-induced denaturation etching are not detailed here; please refer to existing preparation methods.
[0058] Next, refer to Figure 1 and Figure 4 Step S3 is executed, and a thinning process is performed on the first surface and the second surface of the glass substrate 100 respectively, so that the first blind hole 101 is transformed into a first through hole 111 that penetrates the glass substrate 100 from top to bottom, and the second blind hole 102 is transformed into a second through hole 112 that penetrates the glass substrate 100 from bottom to top, and the first through hole 111 and the second through hole 112 are staggered.
[0059] Specifically, most existing methods for fabricating TGV adapter plates employ laser methods to create TGV holes in a glass substrate. However, the TGV holes formed by laser methods are tapered. (See [link to relevant documentation]). Figure 2The morphology of the first blind via 101 is shown. Therefore, to avoid the over-layer phenomenon between TGV vias, the distance between TGV vias is usually increased during the manufacturing process, such as setting the pitch of adjacent TGV vias to 120-150 μm. This method of avoiding over-layer TGV adapter boards by increasing the pitch is difficult to apply to high-density products. Therefore, refer to... Figure 2 and Figure 3 In this embodiment, laser methods are cleverly applied to the first and second surfaces of the glass substrate 100 respectively, thereby forming the first blind hole 101 and the second blind hole 102 in the glass substrate 100, and referring to... Figure 4 After forming the first blind hole 101 and the second blind hole 102, the first blind hole 101 can be transformed into the first through hole 111 that penetrates the glass substrate 100 from top to bottom through a double-sided thinning process, and the second blind hole 102 can be transformed into the second through hole 112 that penetrates the glass substrate 100 from bottom to top, and the first through hole 111 and the second through hole 112 are staggered.
[0060] In this embodiment, the pitch between adjacent first through-hole 111 and second through-hole 112 can be reduced while effectively avoiding over-layering; the thickness of the thinned glass substrate 100 can be 100-200μm, such as 100μm, 150μm, 200μm, etc.; by thinning, the wider area in the blind hole can be removed, thereby reducing the CD size of the subsequently prepared TGV metal pillar.
[0061] The thinning process can be carried out by chemical mechanical polishing (CMP) or mechanical polishing, etc., and there is no limitation here.
[0062] See Figures 3-5 The first blind hole 101 is formed by laser method, so that the opening width is greater than the bottom width. Similarly, the second blind hole 102 is formed by laser method, so that the opening width is greater than the bottom width. The first blind hole 101 and the second blind hole 102 are overlapped, so that the first blind hole 101 and the second blind hole 102 can make full use of the effective space of the glass substrate 100 and reduce the distance D between adjacent TGV holes. The distance D between adjacent first through hole 111 and second through hole 112 can be in the range of 80 to 100 μm, such as 80 μm, 90 μm, 100 μm, etc.
[0063] In this embodiment, when the first blind hole 101 and the second blind hole 102 are prepared, there is an isolation space between adjacent first blind holes 101 and second blind holes 102, thereby effectively avoiding the phenomenon of over-layer.
[0064] In another embodiment, the first blind via 101 and the second blind via 102 may also overlap, i.e., the ends have an over-layer phenomenon. When performing a double-sided thinning process on the glass substrate 100, the overlapping area that causes the over-layer phenomenon can be removed by the thinning process, thereby further reducing the range of the spacing D. The spacing D between adjacent first blind vias 101 and second blind vias 102 can be 30 to 100 μm, such as 30 μm, 60 μm, 70 μm, 80 μm, 90 μm, 100 μm, etc., thereby effectively avoiding the over-layer phenomenon, increasing the density of TGV hole distribution, and realizing the preparation of high-quality products.
[0065] Next, refer to Figure 1 and Figure 5 In step S4, a first TGV metal pillar 201 is formed in the first through hole 111 to fill the first through hole 111, and a second TGV metal pillar 202 is formed in the second through hole 112 to fill the second through hole 112.
[0066] Specifically, it is preferable that the first TGV metal column 201 and the second TGV metal column 202 are formed simultaneously to reduce the number of preparation steps. Of course, if necessary, the first TGV metal column 201 and the second TGV metal column 202 can also be prepared in steps, which is not limited here.
[0067] The method for forming the first TGV metal column 201 may include electroless plating or electroplating; the method for forming the second TGV metal column 202 may include electroless plating or electroplating. Specific preparation methods for the first TGV metal column 201 and the second TGV metal column 202 are not limited here. Specific operations for electroless plating or electroplating are not detailed here; please refer to existing preparation methods.
[0068] In this embodiment, the first TGV metal pillar 201 and the second TGV metal pillar 202 are made of copper, but the material of the TGV metal pillar is not limited to this, and other conductive metal materials can also be used.
[0069] Among them, such as Figure 5The critical dimension (CD) of the first TGV metal column 201, i.e., d, can be 40-50 μm, such as 40 μm, 45 μm, 50 μm, etc., and the critical dimension (CD) of the second TGV metal column 202 can be 40-50 μm, such as 40 μm, 45 μm, 50 μm, etc.
[0070] Furthermore, after the first through hole 111 and the second through hole 112 are prepared by laser method, in order to facilitate the formation of the first TGV metal pillar 201 and the second TGV metal pillar 202 that fill the through holes, the first through hole 111 and the second through hole 112 can be surface treated, such as by wet etching, so that the first through hole 111 and the second through hole 112 have smooth inner surfaces. The method of surface treatment is not limited here.
[0071] Furthermore, after forming the first TGV metal pillar 201 and the second TGV metal pillar 202, in order to facilitate the subsequent preparation of the redistribution layer, the glass substrate 100 can be surface treated, such as polishing or wet etching, to avoid electrical connections between the TGV metal pillars and obtain a flat surface.
[0072] Next, refer to Figure 1 and Figure 6 In step S5, a first redistribution layer 301 is formed on the first surface of the glass substrate 100, and a second redistribution layer 302 is formed on the second surface of the glass substrate 100, wherein the first redistribution layer 301 and the second redistribution layer 302 are respectively electrically connected to the first TGV metal pillar 201 and the second TGV metal pillar 202.
[0073] Specifically, the method for forming the first redistribution layer 301 on the first surface of the glass substrate 100 may include a semiconductor process method or a substrate bonding method. Similarly, the method for forming the second redistribution layer 302 on the second surface of the glass substrate 100 may include a semiconductor process method or a substrate bonding method.
[0074] The semiconductor manufacturing process is a method of preparing the first redistribution layer 301 and the second redistribution layer 302 on the glass substrate 100 through steps such as coating, exposure, development, deposition, and etching. The substrate bonding method is a method of preparing the required first redistribution layer 301 and the second redistribution layer 302 in advance, and then directly bonding the first redistribution layer 301 and the second redistribution layer 302 to the glass substrate 100.
[0075] The specific fabrication methods for the first redistribution layer 301 and the second redistribution layer 302 are not excessively limited here; they can be fabricated using the same method, or different methods can be used. The specific materials and structures of the first redistribution layer 301 and the second redistribution layer 302 are also not excessively limited here and can be selected as needed.
[0076] See Figures 2-6 This embodiment also provides a TGV adapter board, wherein the TGV adapter board can be directly prepared using the above-described preparation process. Therefore, the material, structure, etc. of the TGV adapter board can be referred to the above content. Of course, the TGV adapter board can also be prepared using other preparation processes as needed.
[0077] In this embodiment, the TGV adapter board includes:
[0078] A glass substrate 100, the glass substrate 100 including a first surface and a second surface disposed opposite to each other;
[0079] A first through hole 111 extends from the first surface of the glass substrate 100 from top to bottom through the glass substrate 100; a second through hole 112 extends from the second surface of the glass substrate 100 from bottom to bottom through the glass substrate 100; and the first through hole 111 and the second through hole 112 are staggered.
[0080] The method for preparing the first through hole 111 and the second through hole 112 is as follows:
[0081] A first blind hole 101 with its bottom located in the glass substrate 100 is formed from a first surface of the glass substrate 100 using a first laser method, and a second blind hole 102 with its bottom located in the glass substrate 100 is formed from a second surface of the glass substrate 100 using a second laser method.
[0082] Thinning processes are performed on the first surface and the second surface of the glass substrate 100 respectively, so that the first blind hole 100 is transformed into the first through hole 111, and the second blind hole 102 is transformed into the second through hole 112.
[0083] The first TGV metal pillar 201 fills the first through hole 111;
[0084] The second TGV metal pillar 202 fills the second through hole 112;
[0085] A first redistribution layer 301 is located on a first surface of the glass substrate 100, and the first redistribution layer 301 is electrically connected to both the first TGV metal pillar 201 and the second TGV metal pillar 202.
[0086] The second redistribution layer 302 is located on the second surface of the glass substrate 100, and the second redistribution layer 302 is electrically connected to both the first TGV metal pillar 201 and the second TGV metal pillar 202.
[0087] The distance D between adjacent first TGV metal pillars 201 and second TGV metal pillars 202 can range from 30 to 100 μm, such as 30 μm, 60 μm, 70 μm, 80 μm, 90 μm, 100 μm, etc. Since the first through hole 111 and the second through hole 112 are overlapped, the first TGV metal pillars 201 and the second TGV metal pillars 202 are overlapped, and an effective gap area can be formed between them to effectively avoid the phenomenon of over-layer, improve the density of TGV metal pillar distribution, and prepare high-quality products.
[0088] The glass substrate 100 may include a wafer-level glass substrate, such as 4-inch, 6-inch, 8-inch, 12-inch, etc. The thickness of the glass substrate 100 before thinning may be 200-300μm, such as 200μm, 250μm, 300μm, etc. The thickness of the glass substrate 100 after thinning may be 100-200μm, such as 10μm, 150μm, 200μm, etc. However, the size of the glass substrate 100 is not limited to these, and can be set as needed. No excessive restrictions are imposed here.
[0089] Among them, such as Figure 5 The CD (d) dimension of the first TGV metal pillar 201 can be 40-50 μm, such as 40 μm, 45 μm, 50 μm, etc., and the CD dimension of the second TGV metal pillar 202 can be 40-50 μm, such as 40 μm, 45 μm, 50 μm, etc.
[0090] Furthermore, the first TGV metal pillar 201 and the second TGV metal pillar 202 may have the same morphology, see reference. Figure 6 The illustration shows the first TGV metal pillar 201 and the second TGV metal pillar 202, which are conical and have the same shape. However, it is not limited to this. For example, the first TGV metal pillar 201 and the second TGV metal pillar 202 can also be conical with different sizes. This can be achieved by adjusting the laser process to meet specific product requirements. No limitation is made here.
[0091] In summary, the TGV adapter board and its preparation method of the present invention employ a first laser method to form a first blind hole with its bottom located on a glass substrate, and a second laser method to form a second blind hole with its bottom located on a glass substrate. Then, a thinning process is performed on the first surface and the second surface of the glass substrate, respectively, so that the first blind hole is transformed into a first through hole and the second blind hole is transformed into a second through hole. The formed first through holes and second through holes are staggered. Thus, the present application can prepare a high-performance TGV adapter board with smaller spacing, smaller CD size, thinner profile, suitable for high-density installation, and effectively avoid metal pillar overlap on a glass substrate based on the laser method and the thinning process.
[0092] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in the present invention should still be covered by the claims of the present invention.
Claims
1. A method for preparing a TGV adapter plate, characterized in that, Includes the following steps: A glass substrate is provided, the glass substrate including a first surface and a second surface disposed opposite to each other; A first blind hole with its bottom located in the glass substrate is formed from a first surface using a first laser method, and a second blind hole with its bottom located in the glass substrate is formed from a second surface using a second laser method. Thinning processes are performed on the first and second surfaces of the glass substrate respectively, so that the first blind hole is transformed into a first through hole that penetrates the glass substrate from top to bottom, and the second blind hole is transformed into a second through hole that penetrates the glass substrate from bottom to top, and the first through hole and the second through hole are staggered. A first TGV metal pillar is formed in the first through hole to fill the first through hole, and a second TGV metal pillar is formed in the second through hole to fill the second through hole; A first redistribution layer is formed on a first surface of the glass substrate, and a second redistribution layer is formed on a second surface of the glass substrate, wherein the first redistribution layer and the second redistribution layer are respectively electrically connected to the first TGV metal pillar and the second TGV metal pillar.
2. The method for preparing the TGV adapter plate according to claim 1, characterized in that: The first laser method includes laser ablation or laser-induced denaturation etching; the second laser method includes laser ablation or laser-induced denaturation etching.
3. The method for preparing the TGV adapter plate according to claim 1, characterized in that: The first TGV metal pillar and the second TGV metal pillar are formed simultaneously, wherein the methods for forming the first TGV metal pillar and the second TGV metal pillar include chemical plating or electroplating.
4. The method for preparing the TGV adapter plate according to claim 1, characterized in that: The method for forming the first redistribution layer on the first surface of the glass substrate includes a semiconductor process or a substrate bonding method; the method for forming the second redistribution layer on the second surface of the glass substrate includes a semiconductor process or a substrate bonding method.
5. The method for preparing the TGV adapter plate according to claim 1, characterized in that: The distance between adjacent first and second through holes ranges from 30 to 100 μm.
6. The method for preparing the TGV adapter plate according to claim 1, characterized in that: The CD dimension of the first TGV metal column is 40-50 μm; the CD dimension of the second TGV metal column is 40-50 μm.
7. The method for preparing the TGV adapter plate according to claim 1, characterized in that: The thickness of the glass substrate before thinning is 200-300 μm; the thickness of the glass substrate after thinning is 100-200 μm.
8. A TGV adapter board, characterized in that, The TGV adapter board includes: A glass substrate, the glass substrate comprising a first surface and a second surface disposed opposite to each other; A first through hole extends from the first surface of the glass substrate downwards through the glass substrate; a second through hole extends from the second surface of the glass substrate downwards through the glass substrate; and the first through hole and the second through hole are staggered. The method for preparing the first through hole and the second through hole is as follows: A first blind hole with its bottom located in the glass substrate is formed from a first surface using a first laser method, and a second blind hole with its bottom located in the glass substrate is formed from a second surface using a second laser method. Thinning processes are performed on the first surface and the second surface of the glass substrate respectively, so that the first blind hole is transformed into the first through hole, and the second blind hole is transformed into the second through hole; The first TGV metal pillar fills the first through hole; The second TGV metal pillar fills the second through hole; A first redistribution layer is located on a first surface of the glass substrate, and the first redistribution layer is electrically connected to both the first TGV metal pillar and the second TGV metal pillar. The second redistribution layer is located on the second surface of the glass substrate and is electrically connected to both the first TGV metal pillar and the second TGV metal pillar.
9. The TGV adapter board according to claim 8, characterized in that: The distance between adjacent first TGV metal pillars and second TGV metal pillars ranges from 30 to 100 μm; the CD dimension of the first TGV metal pillar is 40 to 50 μm. The CD dimension of the second TGV metal column is 40–50 μm.
10. The TGV adapter board according to claim 8, characterized in that: The first TGV metal column and the second TGV metal column have the same morphology.