Phase shift mask layout forming method and device, computer equipment and storage medium

Abstract

The invention relates to a phase shift mask layout forming method and device, computer equipment, a storage medium and a computer program product. The method comprises the following steps: acquiring an initial mask layout, wherein the mask layout comprises a main pattern positioned in a light-transmitting area; performing exposure simulation based on the initial mask layout, and obtaining a sidelobe position area where a sidelobe pattern appears; determining a target graph in the main graph according to the side lobe position area; a shading auxiliary pattern is added into the target pattern to update the mask layout, and the size of the shading auxiliary pattern is smaller than the exposure precision. By adopting the method, the sidelobe pattern phenomenon can be improved.

Description

Technical Field

[0001] This application relates to the field of photolithography technology, and in particular to a method, apparatus, computer equipment, storage medium, and computer program product for forming a phase-shifting mask pattern. Background Technology

[0002] With the rapid development of the integrated circuit industry, the feature size of semiconductor devices is constantly shrinking, approaching the limits of photolithography imaging systems. Therefore, in pursuit of high resolution, a series of photolithography resolution enhancement technologies have emerged.

[0003] Phase-shifting masks (PSM) are a widely adopted resolution enhancement technique. Compared to traditional bipolar masks that only use light intensity for imaging, PSM also uses phase for imaging to achieve higher resolution. For intensity-attenuating phase-shifting masks, light at the material edge undergoes a 180° phase deflection after penetration, thus canceling out the transmitted light with 0° phase, resulting in a steeper intensity change and improving the resolution of the lithographic pattern.

[0004] However, phase-shift masks are prone to forming low-energy peaks on the dark side of the exposure field. When the exposure energy is high, these peaks may exceed the photoresist exposure threshold, causing the photoresist in the dark area to be exposed and producing side lobe patterns. The appearance of side lobe patterns may cause circuit failures, thereby reducing semiconductor production yield. Summary of the Invention

[0005] Therefore, it is necessary to provide a phase-shift mask patterning method, apparatus, computer device, storage medium, and computer program product that can improve the sidelobe pattern phenomenon in order to address the above-mentioned technical problems.

[0006] A method for forming a phase-shift mask layout includes:

[0007] Obtain an initial mask pattern, the mask pattern including a main pattern located in the light-transmitting area;

[0008] Exposure simulation is performed based on the initial mask pattern to obtain the side lobe location area where the side lobe pattern appears;

[0009] Based on the side lobe location region, the target graphic is determined in the main graphic;

[0010] A light-blocking auxiliary graphic is added within the target graphic to update the mask pattern. The size of the light-blocking auxiliary graphic is smaller than the exposure accuracy.

[0011] In one embodiment, after adding a light-blocking auxiliary pattern within the target pattern to update the mask layout, the method further includes:

[0012] Exposure simulation is performed based on the updated mask pattern to determine side lobe pattern information, which includes whether there are side lobe patterns in the side lobe location area and whether there are no side lobe patterns in the side lobe location area.

[0013] When the side lobe pattern information indicates that there is no side lobe pattern in the side lobe location area, the updated mask layout is obtained.

[0014] In one embodiment, when the sidelobe pattern information indicates that there is a sidelobe pattern in the sidelobe location area, the step of determining the target pattern in the main pattern based on the sidelobe location area is returned to iteratively update the mask layout until the sidelobe pattern information indicates that there is no sidelobe pattern in the sidelobe location area, and the mask layout after the last update is obtained.

[0015] In one embodiment, when iteratively updating the mask pattern, for the same side lobe location area, the light-blocking auxiliary pattern is added sequentially from the direction closest to the side lobe location area to the direction furthest from the side lobe location area.

[0016] In one embodiment, when iteratively updating the mask pattern, the target pattern is selected sequentially from the direction closest to the side lobe location area to the direction furthest from the side lobe location area, corresponding to the same side lobe location area.

[0017] In one embodiment, before performing exposure simulation based on the updated mask pattern to determine the sidelobe pattern information of the sidelobe location region, the process includes:

[0018] Optical proximity correction is performed on the updated mask pattern.

[0019] In one embodiment, before performing exposure simulation based on the initial mask pattern to obtain the sidelobe location region where the sidelobe pattern appears, the process includes:

[0020] Optical proximity correction is performed on the initial mask pattern.

[0021] In one embodiment, the width and spacing of the light-blocking auxiliary graphics are determined based on the width and spacing of the target graphics.

[0022] A mask pattern forming apparatus, the apparatus comprising:

[0023] An acquisition module is used to acquire an initial mask pattern, the mask pattern including a main pattern located in the light-transmitting area;

[0024] An exposure simulation module is used to perform exposure simulation based on the initial mask pattern to obtain the side lobe location area where the side lobe pattern appears.

[0025] The determination module is used to determine the target graphic in the main graphic based on the side lobe position region;

[0026] An auxiliary graphic adding module is used to add a light-blocking auxiliary graphic within the target graphic to update the mask pattern, wherein the size of the light-blocking auxiliary graphic is smaller than the exposure accuracy.

[0027] A computer device includes a memory and a processor, the memory storing a computer program, the processor executing the computer program to implement the steps of any of the methods described above.

[0028] A computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, implements the steps of any of the methods described above.

[0029] A computer program product includes a computer program that, when executed by a processor, implements the steps of any of the methods described above.

[0030] The aforementioned phase-shift mask patterning method, apparatus, computer equipment, storage medium, and computer program product perform exposure simulation after obtaining the initial mask pattern to acquire the sidelobe location regions where sidelobe patterns appear. Then, based on the sidelobe location regions, a target pattern is selected and light-shielding auxiliary patterns are added. After adding the light-shielding auxiliary patterns within the target pattern, these patterns have a light-shielding effect during exposure, thereby reducing the energy reaching the photoresist and altering optical effects such as light diffraction. This lowers the energy peak in the sidelobe location regions where sidelobe patterns appear, thus eliminating or improving (e.g., reducing or minimizing) the sidelobe patterns. This application can eliminate or improve sidelobe patterns simply by adding light-shielding auxiliary patterns without changing the size of the main pattern. Furthermore, the light intensity in the sidelobe location regions can be flexibly adjusted by the number and size of the light-shielding auxiliary patterns. Attached Figure Description

[0031] Figure 1 This is a schematic flowchart of a phase-shift mask layout formation method in one embodiment;

[0032] Figure 2 This is a schematic flowchart of a phase-shift mask layout formation method in another embodiment;

[0033] Figures 3 to 5 These are top-view schematic diagrams of the mask pattern formation process in different embodiments, wherein (a) is a schematic diagram of the main pattern and side lobe patterns without the addition of light-shielding auxiliary patterns, and (b) is a schematic diagram of the main pattern after adding light-shielding auxiliary patterns and eliminating the side lobe patterns. Figure 1 as well as Figure 5 In the diagram, (c) is an enlarged version of (b);

[0034] Figure 6This is a block diagram of a mask layout forming apparatus in one embodiment;

[0035] Figure 7 This is a block diagram of a mask pattern forming apparatus in another embodiment.

[0036] Explanation of reference numerals in the attached figures:

[0037] 100 - Main graphic, 200 - Side lobe location area, 300 - Shading auxiliary graphic. Detailed Implementation

[0038] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application.

[0039] In one embodiment, see Figure 1 A method for forming a phase-shift mask layout is provided, comprising the following steps:

[0040] Step S10: Obtain the initial mask pattern, which includes the main pattern 100 located in the light-transmitting area.

[0041] The initial mask layout can be an unprocessed, original design phase-shift mask layout. The mask layout includes a main pattern 100. The main pattern 100 in the mask layout can include multiple interconnected sub-patterns. And / or, the main pattern 100 in the mask layout can also include multiple spaced-apart sub-patterns. For example, Figure 3 The main graphic 100 of the mask shown includes nine interconnected sub-graphics, numbered 1 to 9.

[0042] The area containing the main pattern 100 is the light-transmitting area of ​​the mask pattern, forming the bright area of ​​the exposure light field during exposure. The area on the mask pattern other than the main pattern 100 is the light-blocking area, forming the dark area of ​​the exposure light field during exposure.

[0043] Step S30: Perform exposure simulation based on the initial mask pattern to obtain the side lobe location area where the side lobe pattern 200 appears.

[0044] Exposure simulation models can be used to simulate exposure.

[0045] For example, before step S30, the following may also be included:

[0046] Step S20: Perform optical proximity correction (OPC) on the initial mask pattern.

[0047] The OPC system can be used to perform optical proximity correction on the initial mask pattern. After correcting the initial mask pattern, the exposure simulation model within the OPC system can be used to simulate the exposure.

[0048] Of course, the exposure simulation model used for exposure simulation is not limited to the exposure simulation model within the OPC system. Furthermore, step S20 is not necessarily required before step S30.

[0049] The initial mask pattern is the original phase-shift mask pattern. According to the imaging principle of phase-shift masks, when the exposure energy is large enough, the photoresist in the dark area of ​​the exposure light field will be exposed, thus producing a side lobe pattern 200.

[0050] The sidelobe location region of the sidelobe pattern 200 refers to the area occupied by the sidelobe pattern 200. The sidelobe location region can be, but is not limited to, a region with an area greater than 0. For example, the sidelobe location region can also be a location point, in which case it is a region with an area equal to 0.

[0051] The number of sidelobe patterns 200 generated after exposure can be one or more. Each sidelobe pattern 200 has a sidelobe location region. It is understood that "multiple" in this application means two or more.

[0052] The shape, size, and arrangement of each sub-graphic in the main graphic 100 of the mask layout are different, which can result in different side lobe positions and the number of side lobe graphics 200.

[0053] Step S40: Determine the target graphic in the main graphic 100 based on the side lobe location area.

[0054] The target graphic may include one or more sub-graphics in the main graphic 100.

[0055] Specifically, the target graphic can be a sub-graphic that is less than a preset distance from the side lobe location region. As an example, the target graphic can be the sub-graphic closest to the side lobe location region. There can be one or more sub-graphics closest to the side lobe location region.

[0056] For example, please see Figure 3 as well as Figure 4 For the same sidelobe location region, there are two nearest sub-patterns. Therefore, based on this sidelobe location region, two target patterns can be identified. Specifically, in Figure 3 In this process, sub-figures 4 and 6 can be identified as the target figures. (See also...) Figure 5 For the same sidelobe location region, there is only one nearest sub-pattern. Therefore, based on the same sidelobe location region, only one target pattern is determined.

[0057] Furthermore, the target images obtained from different side lobe location regions can be different images or the same image.

[0058] For example, please see Figure 5 The main graphic 100 has six sub-graphics, 11 to 16, on both sides forming side-lobed graphics 200. Therefore, the target graphic obtained from the side-lobed position areas on both sides of any of these six sub-graphics is that sub-graphic.

[0059] When multiple sidelobe patterns 200 are generated after exposure, a corresponding target pattern can be determined for each sidelobe pattern 200 based on its sidelobe location region. For example, for each sidelobe pattern 200, the pattern closest to it is selected as its corresponding target pattern.

[0060] Step S50: Add a light-blocking auxiliary graphic 300 within the target graphic to update the mask pattern. The size of the light-blocking auxiliary graphic 300 is smaller than the exposure accuracy.

[0061] When adding a light-blocking auxiliary graphic 300 within the target graphic, one or multiple graphics can be added simultaneously; this application does not impose any restrictions on this.

[0062] The light-blocking auxiliary pattern 300 is an auxiliary pattern used for light blocking, and it can be a negative scattering strip (SRIF). The shape of the light-blocking auxiliary pattern 300 can be a strip or other shapes (such as a hole).

[0063] The size of the light-shielding auxiliary pattern 300 is smaller than the exposure precision, so even though it has a light-shielding effect during exposure, it will not be imaged on the photoresist.

[0064] For example, when the photoresist is a positive resist, the main pattern 100 (including the target pattern) will be transferred into the photoresist to form holes or grooves. Although the light-shielding auxiliary pattern 300 in the target pattern has a light-shielding function during exposure, it does not affect the holes or grooves formed in the photoresist based on the target pattern.

[0065] For example, when the photoresist is a negative photoresist, the main pattern 100 (including the target pattern) will be transferred into the photoresist to form a line pattern. Although the light-shielding auxiliary pattern 300 in the target pattern has a light-shielding function during exposure, it does not affect the line pattern formed in the photoresist based on the target pattern.

[0066] In this embodiment, after obtaining the initial mask pattern, exposure simulation is performed to obtain the sidelobe location regions where the sidelobe pattern 200 appears. Then, based on the sidelobe location regions, a target pattern is selected and a light-shielding auxiliary pattern 300 is added. After adding the light-shielding auxiliary pattern 300 to the target pattern, the light-shielding auxiliary pattern 300 has a light-shielding effect during exposure, thereby reducing the energy reaching the photoresist and changing optical effects such as light diffraction. This reduces the energy peak in the sidelobe location regions where the sidelobe pattern 200 appears, thus eliminating or improving (e.g., reducing or minimizing) the sidelobe pattern 200. This embodiment can eliminate or improve the sidelobe pattern simply by adding the light-shielding auxiliary pattern 300 without changing the size of the main pattern. Furthermore, the light intensity in the sidelobe location regions can be flexibly adjusted by the number and size of the light-shielding auxiliary patterns 300.

[0067] In one embodiment, see Figure 2 After step S50, the following steps are also included:

[0068] Step S70: Perform exposure simulation based on the updated mask pattern to determine side lobe pattern information, which includes side lobe pattern 200 in the side lobe location area and side lobe pattern 200 without side lobe pattern 200 in the side lobe location area.

[0069] The same exposure simulation model can be used for exposure simulation as in step S30.

[0070] For example, before step S70, the following may also be included:

[0071] Step S60: Perform optical proximity correction on the updated mask pattern.

[0072] The OPC system can be used to perform optical proximity correction on the updated mask pattern. After correcting the updated mask pattern, the exposure simulation model within the OPC system can be used to perform simulated exposure.

[0073] Of course, the exposure simulation model used for exposure simulation is not limited to the exposure simulation model within the OPC system. Furthermore, step S60 is not necessarily required before step S70.

[0074] After performing an exposure simulation, it can be determined whether the side lobe location region that originally had the side lobe pattern 200 still has the side lobe pattern 200.

[0075] In the case of obtaining multiple sidelobe location regions in step S30, it can be determined whether each sidelobe location region still has a sidelobe pattern 200.

[0076] When determining sidelobe pattern information, if there are no sidelobe patterns 200 in all sidelobe location areas, the sidelobe pattern information is determined to be "no sidelobe pattern 200 in the sidelobe location area"; otherwise, it is determined to be "sidelobe pattern 200 in the sidelobe location area". Alternatively, one or more sidelobe location areas can be selected as target location areas. If there are no sidelobe patterns 200 in all target location areas, the sidelobe pattern information is determined to be "no sidelobe pattern 200 in the sidelobe location area"; otherwise, it is determined to be "sidelobe pattern 200 in the sidelobe location area". Alternatively, if the number of sidelobe location areas with sidelobe patterns 200 is less than a preset number, the sidelobe pattern information is determined to be "no sidelobe pattern 200 in the sidelobe location area"; otherwise, it is determined to be "sidelobe pattern 200 in the sidelobe location area". The preset number can be set according to actual needs.

[0077] Simultaneously, a sidelobe-free pattern 200 is defined within each sidelobe location region. This can mean that the sidelobe pattern 200 in that sidelobe location region completely disappears, or that the size of the sidelobe pattern 200 in that sidelobe location region is smaller than a preset size. This application does not impose any restrictions on either, and the preset size can be set according to actual needs.

[0078] Step S80: When the side lobe pattern information is "no side lobe pattern 200 in the side lobe location area", obtain the updated mask layout.

[0079] When the sidelobe pattern information is determined to be that there is no sidelobe pattern 200 in the sidelobe location region, the updated mask layout can be saved. Subsequently, a phase-shifting mask for actual exposure can be prepared based on this saved mask layout. During actual exposure based on this phase-shifting mask, the sidelobe pattern 200 on the photoresist located in the dark region of the exposure light field can be effectively eliminated or improved.

[0080] In one embodiment, after step S70, the method further includes:

[0081] Step S90: When the side lobe pattern information indicates that there is a side lobe pattern 200 in the side lobe position area, return to the step of determining the target pattern in the main pattern 100 based on the side lobe position area, so as to iteratively update the mask layout until the side lobe pattern information indicates that there is no side lobe pattern 200 in the side lobe position area, and obtain the mask layout after the last update.

[0082] When the sidelobe pattern information indicates that there is a sidelobe pattern 200 in the sidelobe location area, return to step 40 to loop through steps S40 to S90. After the loop ends, save the mask layout obtained after the last update.

[0083] During this process, when returning to step 40 to re-determine the target graphic, the target graphic may be the same as or different from the previously determined target graphic.

[0084] As an example, if the width of the previously determined target graphic is large and there is still remaining space to set the shading auxiliary graphic 300, then when returning to step 40 to determine the target graphic again, the previously determined target graphic can be used as the target graphic again. Then, shading auxiliary graphics 300 can be added within this target graphic.

[0085] For example, when step S40 is executed for the first time after step S30, the graphic closest to the side lobe position area is taken as the target graphic. And after the first addition of the light-blocking auxiliary graphic 300, if there is still space remaining in the area of ​​the graphic closest to the side lobe position area to add more light-blocking auxiliary graphics 300, then when step S40 is executed for the second time, it can be taken as the target graphic again, and more light-blocking auxiliary graphics 300 can be added within it.

[0086] like Figure 3 In the main image, within the same sub-image closest to the side lobe location area, two light-blocking auxiliary graphics 300 are added. One of them, located near the side lobe location area, is the light-blocking auxiliary graphic 300 added during the first execution of steps S40 to S90, and the other is the light-blocking auxiliary graphic 300 added during the second execution of steps S40 to S90.

[0087] As another example, if the width of the currently determined target graphic is small, or if there is insufficient remaining space to set the shading auxiliary graphic 300, then when returning to step 40 to determine the target graphic again, another sub-graphic can be used as the new target graphic. Then, the shading auxiliary graphic 300 is added within this new target graphic. For example... Figure 4 In the process of executing steps S40 to S90 five times in a loop, five pairs of sub-graphics of the main graphic 100 can be selected from right to left as target graphics one by one, and then five pairs of light-blocking auxiliary graphics 300 can be added one by one. Only one light-blocking auxiliary graphic 300 is formed in each sub-graphic.

[0088] In this embodiment, the design of the mask layout can be continuously optimized by repeatedly executing steps S40 to S90.

[0089] In one embodiment, when iteratively updating the mask layout, for the same side lobe location area, light-blocking auxiliary patterns 300 are added sequentially from the direction closest to the side lobe location area to the direction furthest from the side lobe location area.

[0090] At this time, when steps S40 to S90 are executed in a loop, the light-blocking auxiliary pattern 300 added in the previous execution of step S50 is closer to the side lobe position area than the light-blocking auxiliary pattern 300 added in the subsequent execution of step S50.

[0091] like Figure 4If the side lobe position area is located on the right side, then when executing steps S40 to S90 in a loop, light-blocking auxiliary graphics 300 can be added sequentially from right to left.

[0092] For example, Figure 3 or Figure 5 In the same sub-graphic of the main graphic 100 that serves as the target graphic, light-blocking auxiliary graphics 300 are added sequentially from the direction of the graphic near its corresponding side lobe position area to the direction of the graphic away from the side lobe position area.

[0093] The closer the light-blocking auxiliary pattern 300 is to the corresponding sidelobe location region, the more significant its effect on reducing the exposure energy peak of the sidelobe location region. Therefore, adding light-blocking auxiliary patterns 300 sequentially from the sidelobe location region to the farthest sidelobe location region can effectively improve the iterative optimization efficiency of the mask layout. As an example, when cyclically executing steps S40 to S90, for each execution of step S50, corresponding to the same sidelobe location region, one light-blocking auxiliary pattern 300 can be added within the same target pattern.

[0094] In one embodiment, when iteratively updating the mask layout, for the same side lobe location region, the target pattern is selected sequentially from the direction closest to the side lobe location region to the direction furthest from the side lobe location region.

[0095] like Figure 4 In the middle, the side lobe position area is located on the right side, so each sub-figure of the main figure 100 can be selected as the target figure from right to left.

[0096] The closer the target pattern is to the side lobe region, the more significant the reduction effect of the light-blocking auxiliary pattern 300 formed within it on the exposure energy peak of the side lobe region. Therefore, selecting target patterns sequentially from the direction closest to the side lobe region to the direction furthest from the side lobe region can also effectively improve the iterative optimization efficiency of the mask layout.

[0097] It is understood that in this embodiment, the same sub-graphic can be used as the target graphic once or multiple times. When it is used as the target graphic multiple times, the distance between the multiple light-blocking auxiliary graphics 300 added inside and the corresponding side lobe position area is not limited.

[0098] In one embodiment, when adding the light-blocking auxiliary graphic 300 in step S50, the size and spacing of the light-blocking auxiliary graphic 300 are determined according to the size and spacing of the target graphic.

[0099] The size of the light-shielding auxiliary pattern 300 added in step S50 can be set to 1 to 2 times the limit value for photomask fabrication. When the target pattern is large, the size of the light-shielding auxiliary pattern 300 can also be set to be large. When the target pattern is small, the size of the light-shielding auxiliary pattern 300 can also be set to be small.

[0100] When steps S40 to S90 need to be executed repeatedly to iteratively update the mask pattern, the spacing between the successively added light-shielding auxiliary patterns 300 can be set to 1 to 3 times the limit of photomask fabrication. When the size or spacing of the target pattern is large, the spacing of the light-shielding auxiliary patterns 300 can also be set to be large. When the size or spacing of the target pattern is small, the spacing of the light-shielding auxiliary patterns 300 can also be set to be small.

[0101] As an example, when the target graphic is large enough, in step S50, when adding the light-shielding auxiliary graphic 300, the size of the light-shielding auxiliary graphic 300 can be set to the maximum threshold size. The maximum threshold size is the size that cannot be increased further within the limits of photomask fabrication. "Cannot be increased further" can be understood as increasing the size not meeting design and manufacturing requirements. Design and manufacturing requirements may include photomask manufacturing rules (such as the distance between the added light-shielding auxiliary graphic 300 and the edge of the main graphic 100 cannot be less than the minimum value required by the rules). Design and manufacturing requirements may also include actual application requirements of the photomask (such as depth-of-focus requirements). The maximum threshold size can be set according to actual needs.

[0102] If the size of the added light-blocking auxiliary pattern 300 is the maximum threshold size and still cannot eliminate the side lobe pattern 200, then steps S40 to S90 need to be executed repeatedly to iteratively update the mask layout.

[0103] It should be understood that, although Figure 1-2 The steps in the flowchart are shown sequentially as indicated by the arrows, but these steps are not necessarily executed in the order indicated by the arrows. Unless otherwise specified herein, there is no strict order in which these steps are executed, and they can be performed in other orders. Figure 1-2 At least some of the steps in the process may include multiple steps or multiple stages. These steps or stages are not necessarily completed at the same time, but may be executed at different times. The execution order of these steps or stages is not necessarily sequential, but may be executed in turn or alternately with other steps or at least some of the steps or stages in other steps.

[0104] In one embodiment, such as Figure 6 As shown, a mask pattern forming apparatus is provided, including: an acquisition module 10, an exposure simulation module 20, a determination module 30, and an auxiliary pattern adding module 40, wherein:

[0105] The acquisition module 10 is used to acquire the initial mask pattern. The mask pattern includes the main pattern 100 located in the light-transmitting area.

[0106] The exposure simulation module 20 is used to perform exposure simulation based on the initial mask pattern to obtain the side lobe location area where the side lobe pattern 200 appears.

[0107] The determination module 30 is used to determine the target graphic in the main graphic 100 based on the side lobe position area.

[0108] The auxiliary graphic addition module 40 is used to add a light-blocking auxiliary graphic 300 within the target graphic to update the mask pattern. The size of the light-blocking auxiliary graphic 300 is smaller than the exposure accuracy.

[0109] In one embodiment, the exposure simulation module 20 is further configured to add a light-blocking auxiliary pattern 300 within the target pattern to update the mask layout, and then perform exposure simulation based on the updated mask layout to determine side lobe pattern information. The side lobe pattern information includes whether there are side lobe patterns 200 in the side lobe location area and whether there are no side lobe patterns 200 in the side lobe location area.

[0110] Please see Figure 7 The mask pattern forming apparatus also includes a processing module 50. The processing module 50 is used to obtain an updated mask pattern when the side lobe pattern information indicates that there is no side lobe pattern 200 in the side lobe location area.

[0111] In one embodiment, the processing module 50 is further configured to, when the side lobe pattern information indicates that there is a side lobe pattern 200 in the side lobe location area, return to the step of determining the target pattern among multiple main patterns 100, so as to iteratively update the mask layout until the side lobe pattern information indicates that there is no side lobe pattern 200 in the side lobe location area, and obtain the mask layout after the last update.

[0112] In one embodiment, when iteratively updating the mask layout, for the same side lobe location area, light-blocking auxiliary patterns 300 are added sequentially from the direction closer to the side lobe location area to the direction farther away from the side lobe location area.

[0113] In one embodiment, when iteratively updating the mask layout, for the same side lobe location region, the target pattern is selected sequentially from the direction closest to the side lobe location region to the direction furthest from the side lobe location region.

[0114] In one embodiment, the mask pattern forming apparatus further includes a correction module 60. The correction module 60 is used to perform optical proximity correction on the updated mask pattern.

[0115] In one embodiment, the mask pattern forming apparatus further includes a correction module 60. The correction module 60 is used to perform optical proximity correction on the initial mask pattern.

[0116] Specific limitations regarding the mask pattern forming apparatus can be found in the limitations of the mask pattern forming method described above, and will not be repeated here. Each module in the aforementioned mask pattern forming apparatus can be implemented entirely or partially through software, hardware, or a combination thereof. These modules can be embedded in hardware or independently of the processor in a computer device, or stored in software in the memory of a computer device, so that the processor can call and execute the operations corresponding to each module.

[0117] In one embodiment, a computer device is also provided, including a memory and a processor, wherein the memory stores a computer program, and the processor executes the computer program to implement the steps in the above method embodiments.

[0118] In one embodiment, a computer-readable storage medium is provided having a computer program stored thereon that, when executed by a processor, implements the steps in the above method embodiments.

[0119] In one embodiment, a computer device is also provided, including a memory and a processor, wherein the memory stores a computer program, and the processor executes the computer program to implement the steps in the above method embodiments.

[0120] Those skilled in the art will understand that all or part of the processes in the methods of the above embodiments can be implemented by a computer program instructing related hardware. The computer program can be stored in a non-volatile computer-readable storage medium, and when executed, it can include the processes of the embodiments of the methods described above. Any references to memory, storage, databases, or other media used in the embodiments provided in this application can include at least one of non-volatile and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, or optical storage, etc. Volatile memory can include random access memory (RAM) or external cache memory. By way of illustration and not limitation, RAM can be in various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM), etc.

[0121] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0122] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the invention patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. A phase shift mask pattern forming method characterized by, The method comprises the following steps: obtaining an initial mask layout, the mask layout comprising a main pattern in a light transmission area; performing exposure simulation based on the initial mask layout to obtain a sidelobe position area where a sidelobe pattern appears; determining a target pattern in the main pattern according to the sidelobe position area; adding a light shielding auxiliary pattern in the target pattern to update the mask layout, the light shielding auxiliary pattern having a size smaller than an exposure accuracy.

2. The phase shift mask pattern forming method according to claim 1, wherein After the step of adding the light shielding auxiliary pattern in the target pattern to update the mask layout, the method further comprises the following steps: performing exposure simulation based on the updated mask layout to determine sidelobe pattern information, the sidelobe pattern information comprising whether there is a sidelobe pattern in the sidelobe position area; when the sidelobe pattern information is that there is no sidelobe pattern in the sidelobe position area, obtaining the updated mask layout.

3. The phase shift mask pattern forming method according to claim 2, wherein when the sidelobe pattern information is that there is a sidelobe pattern in the sidelobe position area, returning to the step of determining a target pattern in the main pattern according to the sidelobe position area to iteratively update the mask layout until the sidelobe pattern information is that there is no sidelobe pattern in the sidelobe position area, and obtaining the mask layout after the last update.

4. The phase shift mask pattern forming method according to claim 3, wherein When iteratively updating the mask layout, for a same sidelobe position area, the light shielding auxiliary pattern is added in a direction from close to the sidelobe position area to far away from the sidelobe position area.

5. The phase shift mask pattern forming method according to claim 3, wherein When iteratively updating the mask layout, for a same sidelobe position area, the target pattern is selected in a direction from close to the sidelobe position area to far away from the sidelobe position area.

6. The phase shift mask pattern forming method according to claim 2, wherein Before the step of performing exposure simulation based on the updated mask layout to determine the sidelobe pattern information of the sidelobe position area, the method comprises the following step: performing optical proximity correction on the updated mask layout.

7. The phase shift mask pattern forming method according to claim 1, wherein Before the step of performing exposure simulation based on the initial mask layout to obtain the sidelobe position area where the sidelobe pattern appears, the method comprises the following step: performing optical proximity correction on the initial mask layout.

8. The phase shift mask pattern forming method according to claim 1, wherein According to the width and the pitch of the target pattern, the width and the pitch of the light shielding auxiliary pattern are determined.

9. A mask pattern forming apparatus characterized by comprising: The device comprises: an obtaining module, configured to obtain an initial mask layout, the mask layout comprising a main pattern in a light transmission area; an exposure simulation module, configured to perform exposure simulation based on the initial mask layout to obtain a sidelobe position area where a sidelobe pattern appears; a determining module, configured to determine a target pattern in the main pattern according to the sidelobe position area; an auxiliary pattern adding module, configured to add a light shielding auxiliary pattern in the target pattern to update the mask layout, the light shielding auxiliary pattern having a size smaller than an exposure accuracy. 10.A computer device, comprising a memory and a processor, wherein the memory stores a computer program, and the computer device is configured to perform the method according to any one of claims 1-9. The processor implements the steps of the method in any one of claims 1 to 8 when executing the computer program.

11. A computer readable storage medium having stored thereon a computer program, characterized in that, The computer program is executed by the processor to implement the steps of the method in any one of claims 1 to 8.

12. A computer program product comprising a computer program, characterized in that, The computer program is executed by the processor to implement the steps of the method in any one of claims 1 to 8.

Images