Radio frequency low noise amplifier

Abstract

The application relates to the field of wireless communication technology and provides a radio frequency low-noise amplifier which comprises an input matching module, a power amplification module and an output matching module which are electrically connected in sequence, and an RC attenuation module and an RC feedback module; the first end of a first inductor is used as the input end of the output matching module; the first end of the first inductor is connected with the output end of the power amplification module, the control end of a switch and the first end of a first adjustable resistor respectively; the second end of the first inductor is connected with the first end of a second inductor and the first end of a third capacitor respectively; the output end of the switch is connected with the first end of a first capacitor and the first end of a second capacitor respectively; the second end of the second capacitor is connected with the second end of the first adjustable resistor and the second end of the second inductor and is used for connecting a power supply; the second end of the first capacitor is connected with the second end of the third capacitor and is used as the output end of the output matching circuit. The radio frequency low-noise amplifier has adjustable gain, low noise and good linearity.

Description

Technical Field

[0001] This invention relates to the field of wireless communication technology, and more particularly to a radio frequency low-noise amplifier. Background Technology

[0002] As the first-stage active device in an RF front-end system, a radio frequency low-noise amplifier (LNA) typically requires a certain gain to amplify the weak signal received from the antenna and provide noise suppression for subsequent modules. It also needs to have very low noise itself to ensure the system's receiving sensitivity. When the system receives a high-power signal from the antenna, to prevent distortion and damage to subsequent active devices, the LNA must have variable gain and an extended dynamic range. Therefore, in addition to meeting system noise requirements, high linearity and high gain become essential characteristics of gain-adjustable low-noise amplifiers.

[0003] In related technologies, a radio frequency low noise amplifier includes an input matching module, an amplification module, and an output matching module. The input matching module is connected to the input signal of the low noise amplifier. The amplification module is used to amplify the signal. The output matching module is connected to the output terminal of the low noise amplifier and is used to suppress interference signals and output the processed signal to the output terminal of the low noise amplifier.

[0004] However, the circuit implementation of the aforementioned output matching module is limited in function, which means that the highest gain level of the traditional gain-adjustable amplifier will be relatively low due to the front-end insertion loss. Furthermore, given the limited chip area, it is difficult to increase the gain of the low-noise amplifier itself without introducing other factors such as linearity, noise figure (NF), or power consumption degradation. Similarly, for the full utilization of SUB6 frequency (Sub-6GHz) resources, broadband design is also very important, and it also needs to be based on the aforementioned conditions. Such a design will also lead to compatibility issues and low broadband gain. Summary of the Invention

[0005] To address the shortcomings of the existing technologies, this invention proposes a radio frequency low noise amplifier to solve the problems of low gain and poor compatibility of existing radio frequency low noise amplifiers.

[0006] To solve the above-mentioned technical problems, the present invention adopts the following technical solution:

[0007] This invention provides a radio frequency (RF) low-noise amplifier, comprising an input matching module, a power amplification module, and an output matching module, as well as an RC attenuation module and an RC feedback module, all electrically connected in sequence. The input matching module receives an RF signal and achieves input impedance matching. The power amplification module amplifies the RF signal, and the output matching module outputs the amplified RF signal. The first terminal of the RC feedback module is connected to the input terminal of the power amplification module, and the second terminal is connected to the output terminal of the power amplification module. The RC feedback module dynamically adjusts the gain and noise performance of the power amplification module as the frequency deteriorates. The RC attenuation module is electrically connected to the power amplification module and adjusts the required attenuation value at different gain levels.

[0008] The output matching module includes a first inductor, a second inductor, a switch, a first capacitor, a second capacitor, a third capacitor, and a first adjustable resistor with an adjustable resistance value;

[0009] The first end of the first inductor serves as the input end of the output matching module. The first end of the first inductor is connected to the output end of the power amplifier module, the control end of the switch, and the first end of the first adjustable resistor. The second end of the first inductor is connected to the first end of the second inductor and the first end of the third capacitor. The output end of the switch is connected to the first end of the first capacitor and the first end of the second capacitor. The second end of the second capacitor is connected to the second end of the first adjustable resistor and the second end of the second inductor and is used to connect to the power supply. The second end of the first capacitor is connected to the second end of the third capacitor and serves as the output end of the output matching circuit.

[0010] Preferably, the RC feedback module includes a fourth capacitor and a second adjustable resistor with an adjustable resistance value; the first terminal of the fourth capacitor serves as the first terminal of the RC feedback module, the second terminal of the fourth capacitor is connected to the first terminal of the second adjustable resistor, and the second terminal of the second adjustable resistor serves as the second terminal of the RC feedback module.

[0011] Preferably, the power amplifier module includes a first MOSFET and a second MOSFET; the gate of the first MOSFET serves as the input terminal of the power amplifier module, the source of the first MOSFET is grounded, the drain of the first MOSFET is connected to the RC attenuation module and the source of the second MOSFET, the gate of the second MOSFET is used to connect to the external logic control circuit, and the drain of the second MOSFET serves as the output terminal of the power amplifier module.

[0012] Preferably, the RC attenuation module includes a fifth capacitor and a third adjustable resistor with an adjustable resistance value; the first terminal of the fifth capacitor is connected to the drain of the first MOS transistor, the second terminal of the fifth capacitor is connected to the first terminal of the third adjustable resistor, and the second terminal of the third adjustable resistor is grounded.

[0013] Preferably, the input matching module includes a third inductor and a sixth capacitor; the first end of the third inductor serves as the input terminal of the input matching module, the second end of the third inductor is connected to the first end of the sixth capacitor, and the second end of the sixth capacitor serves as the output terminal of the input matching module.

[0014] Preferably, the RF low-noise amplifier further includes a fourth resistor, the first end of which is used to connect to the external logic control circuit, and the second end of which is connected to the gate of the first MOS transistor.

[0015] Preferably, the RF low-noise amplifier further includes a fifth resistor, the first end of which is used to connect to the external logic control circuit, and the gate of the second MOS transistor is connected to the external logic control circuit through the fifth resistor in series.

[0016] Preferably, the RF low-noise amplifier further includes a seventh adjustable capacitor with an adjustable capacitance value, wherein the first end of the seventh adjustable capacitor is connected to the gate of the first MOS transistor, and the second end of the seventh adjustable capacitor is connected to the source of the first MOS transistor.

[0017] Preferably, the RF low-noise amplifier further includes a fourth adjustable inductor with an adjustable inductance value, wherein the first end of the fourth adjustable inductor is connected to the source of the first MOS transistor, and the second end of the fourth adjustable inductor is grounded.

[0018] Preferably, the radio frequency low noise amplifier further includes an eighth capacitor, the first end of which is connected to the second end of the second inductor, and the second end of the eighth capacitor is grounded.

[0019] Compared with related technologies, in the embodiments of the present invention, the input matching module is used to receive radio frequency signals and perform matching output, and the RC feedback module is used to cooperate with the output matching module to adapt to different operating frequencies; a switch switching method is used to realize gain and bandwidth adjustment; and a resistor connected in parallel with the RC attenuation module and the output matching module is used to achieve good performance at different gain levels; matching switching is performed by the switch of the output matching module to improve the overall compatibility performance; at the same time, when operating at the n79 frequency, the switch is turned off, and the third capacitor is connected to the circuit, that is, the output matching is performed by the first inductor, the second inductor and the third capacitor; when operating at the n77 frequency, the switch is turned on, and the capacitor is connected to the circuit. The first and second capacitors in the circuit are introduced to adjust the output matching when N77 is used to achieve wideband performance. At this time, the third capacitor has a very small effect and does not degrade the output matching. Therefore, when the amplifier operates at sub-6 frequency and the input matching can only use one matching device and cannot be replaced to meet different frequency performance, this architecture can achieve wideband input matching performance. It can also achieve good output matching performance through external MIPI signal control. Furthermore, the RC feedback module can be adaptively optimized for the N77 and N79 frequencies to achieve the best noise performance. The flexible gain adjustment method also helps to achieve good noise and linearity performance at different gain levels. Attached Figure Description

[0020] The present invention will now be described in detail with reference to the accompanying drawings. The above and other aspects of the present invention will become clearer and more readily understood through the detailed description following the accompanying drawings. In the drawings:

[0021] Figure 1 The circuit diagram of the radio frequency low noise amplifier provided in the embodiment of the present invention.

[0022] Among them, 100 is an RF low-noise amplifier, 1 is an input matching module, 2 is a power amplification module, 3 is an output matching module, 4 is an RC attenuation module, and 5 is an RC feedback module. Detailed Implementation

[0023] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains; the terminology used herein in the specification of the application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application; the terms "comprising" and "having," and any variations thereof, in the specification, claims, and foregoing drawings of this application, are intended to cover non-exclusive inclusion. The terms "first," "second," etc., in the specification, claims, or foregoing drawings of this application are used to distinguish different objects, not to describe a particular order.

[0024] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0025] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0026] Please see Figure 1 As shown, this embodiment of the invention provides a radio frequency low noise amplifier 100, which includes an input matching module 1, a power amplification module 2, and an output matching module 3, as well as an RC attenuation module 4 and an RC feedback module 5, all electrically connected in sequence. The input terminal (RFIN) of the input matching module 1 is used to receive a radio frequency signal. The power amplification module 2 is used to amplify the radio frequency signal. The output terminal (RFOUT) of the output matching module 3 is used to output the amplified radio frequency signal. The first terminal of the RC feedback module 5 is connected to the input terminal of the power amplification module 2, and the second terminal of the RC feedback module 5 is connected to the output terminal of the power amplification module 2. The RC feedback module 5 is used to dynamically adjust the gain and noise performance of the power amplification module 2 as the frequency deteriorates. The RC attenuation module 4 is electrically connected to the power amplification module 2 and is used to adjust the required attenuation value at different gain levels. By using the input matching module 1 to receive RF signals and perform matching output, the RC feedback module 5 is used to cooperate with the output matching module 3 to adapt to different operating frequencies; a switch switching method is used to realize gain and bandwidth adjustment; and the RC attenuation module 4 and the resistor connected in parallel with the output matching module 3 are used to achieve good performance at different gain levels; the matching is switched by the switch SW1 of the output matching module 3 to improve the overall compatibility performance.

[0027] The output matching module 3 includes a first inductor L1, a second inductor L2, a switch SW1, a first capacitor C1, a second capacitor C2, a third capacitor C3, and a first adjustable resistor R1 with an adjustable resistance value.

[0028] The first end of the first inductor L1 serves as the input terminal of the output matching module 3. The first end of the first inductor L1 is connected to the output terminal of the power amplifier module 2, the control terminal of the switch SW1, and the first end of the first adjustable resistor R1. The second end of the first inductor L1 is connected to the first end of the second inductor L2 and the first end of the third capacitor C3. The output terminal of the switch SW1 is connected to the first end of the first capacitor C1 and the first end of the second capacitor C2. The second end of the second capacitor C2 is connected to the second end of the first adjustable resistor R1 and the second end of the second inductor L2, and is used to connect to the power supply VDD. The second end of the first capacitor C1 is connected to the second end of the third capacitor C3 and serves as the output terminal of the output matching circuit. Through the combination of the first inductor L1 and the second inductor L2 with the first capacitor C1, the second capacitor C2, and the third capacitor C3 (output capacitors), good output matching of N77 and N79 can be achieved. When the path is N79, the first inductor L1, the second inductor L2, and the third capacitor C3 are combined for output. When N77 is selected as the output path, the combination of the first inductor L1, the second inductor L2, the first capacitor C1, and the second capacitor C2 ensures that the output gain is maximized at their respective operating frequencies. Similarly, the combination of the first inductor L1 and the second inductor L2 can also achieve high gain.

[0029] Specifically, the matching is switched via switch SW1 in output matching module 3, improving overall compatibility. Simultaneously, when operating at n79 frequency, switch SW1 is off, and the third capacitor C3 is connected to the circuit. That is, output matching is achieved using the first inductor L1, the second inductor L2, and the third capacitor C3. When operating at n77 frequency, switch SW1 is turned on, and the first capacitor C1 and the second capacitor C2 are introduced to adjust the output matching at n77 to achieve wideband performance. At this time, the third capacitor C3 has a minimal effect and does not significantly degrade the output matching. Therefore, when the amplifier operates at sub-6 frequency, and the input matching only allows for one matching device that cannot be replaced to meet different frequency performance requirements, this architecture can achieve wideband input matching performance. Furthermore, good output matching performance can be achieved through external MIPI signal control. The RC feedback module 5 can also be adaptively optimized for N77 and N79 frequencies to achieve optimal noise performance. The flexible gain adjustment also contributes to good noise and linearity performance at different gain levels. Among them, n77 (3.3-4.2GHz) and n79 (4.4-5GHz) are the core frequency bands of the 5GC band, forming a complementary pattern of wide coverage and high capacity: n77 excels in coverage and serves as the foundational layer of the 5G network. n79 excels in bandwidth and serves as the enhancement layer of the 5G network.

[0030] In this embodiment, the RC feedback module 5 includes a fourth capacitor C4 and a second adjustable resistor R2 with an adjustable resistance value. The first terminal of the fourth capacitor C4 serves as the first terminal of the RC feedback module 5, and the second terminal of the fourth capacitor C4 is connected to the first terminal of the second adjustable resistor R2. The second terminal of the second adjustable resistor R2 serves as the second terminal of the RC feedback module 5. Broadband performance is achieved by adjusting the resistance value of the second adjustable resistor R2. Specifically, different resistance values ​​of the second adjustable resistor R2 are used when operating at n77 and n79 frequencies to address the deterioration of gain and noise performance with frequency.

[0031] In this embodiment, the power amplifier module 2 includes a first MOSFET M1 and a second MOSFET M2. The gate of the first MOSFET M1 serves as the input terminal of the power amplifier module 2, the source of the first MOSFET M1 is grounded, the drain of the first MOSFET M1 is connected to both the RC attenuation module 4 and the source of the second MOSFET M2, the gate of the second MOSFET M2 is used to connect to an external logic control circuit, and the drain of the second MOSFET M2 serves as the output terminal of the power amplifier module 2. The first MOSFET M1 and the second MOSFET M2 are used to improve the overall signal amplification effect, thereby improving gain and linearity.

[0032] In this embodiment, the RC attenuation module 4 includes a fifth capacitor C5 and a third adjustable resistor R3 with an adjustable resistance value. The first terminal of the fifth capacitor C5 is connected to the drain of the first MOSFET M1, and the second terminal of the fifth capacitor C5 is connected to the first terminal of the third adjustable resistor R3. The second terminal of the third adjustable resistor R3 is grounded. By adjusting the resistance value of the third adjustable resistor R3, the required attenuation value can be achieved at different gain levels, and the linearity at different gain levels is improved accordingly.

[0033] In this embodiment, the input matching module 1 includes a third inductor L3 and a sixth capacitor C6. The first end of the third inductor L3 serves as the input terminal of the input matching module 1, the second end of the third inductor L3 is connected to the first end of the sixth capacitor C6, and the second end of the sixth capacitor C6 serves as the output terminal of the input matching module 1. DC blocking is achieved through the sixth capacitor C6, and the input RF signal is impedance matched using the third inductor L3 and the sixth capacitor C6 before output, resulting in good matching performance.

[0034] In this embodiment, the RF low-noise amplifier 100 further includes a fourth resistor R4. The first end of the fourth resistor R4 is connected to the external logic control circuit, and the second end of the fourth resistor R4 is connected to the gate of the first MOSFET M1. The fourth resistor R4 provides circuit protection. The external logic control circuit outputs a first control signal Vb1, which passes through the fourth resistor R4 and is then output to the gate of the first MOSFET M1, thereby controlling the first MOSFET M1 or providing a bias voltage, etc.

[0035] In this embodiment, the RF low-noise amplifier 100 further includes a fifth resistor R5. The first end of the fifth resistor R5 is used to connect to the external logic control circuit. The gate of the second MOSFET M2 is connected to the external logic control circuit through the fifth resistor R5 in series. The fourth resistor R4 can protect the circuit. The external logic control circuit outputs a second control signal Vb2, which is then output to the gate of the second MOSFET M2 after passing through the fourth resistor R4, thereby controlling the second MOSFET M2 or providing a bias voltage, etc.

[0036] In this embodiment, the RF low-noise amplifier 100 further includes a seventh adjustable capacitor C7 with an adjustable capacitance value. The first terminal of the seventh adjustable capacitor C7 is connected to the gate of the first MOSFET M1, and the second terminal of the seventh adjustable capacitor C7 is connected to the source of the first MOSFET M1. By adjusting the capacitance of the seventh adjustable capacitor C7, a better matching effect between the gate and source of the first MOSFET M1 can be achieved. By using the seventh adjustable capacitor C7 in conjunction with the input matching module 1, a good impedance matching function can be achieved, further improving the gain and linearity performance of the circuit.

[0037] In this embodiment, the RF low-noise amplifier 100 further includes a fourth adjustable inductor L4 with an adjustable inductance value. The first end of the fourth adjustable inductor L4 is connected to the source of the first MOSFET M1, and the second end of the fourth adjustable inductor L4 is grounded. By adjusting the fourth adjustable inductor L4 at the source of the first MOSFET M1, the first MOSFET M1 can achieve energy storage, energy transfer, and current limiting protection.

[0038] In this embodiment, the RF low-noise amplifier 100 further includes an eighth capacitor C8. The first terminal of the eighth capacitor C8 is connected to the second terminal of the second inductor L2, and the second terminal of the eighth capacitor C8 is grounded. Connecting the eighth capacitor C8 to the power supply VDD provides energy storage and protection for the overall circuit.

[0039] It should be noted that the various embodiments described above with reference to the accompanying drawings are merely illustrative of the present invention and not intended to limit its scope. Those skilled in the art should understand that any modifications or equivalent substitutions made to the present invention without departing from its spirit and scope should be included within the scope of the present invention. Furthermore, unless the context otherwise requires, words appearing in the singular include those in the plural, and vice versa. Additionally, unless specifically stated otherwise, all or part of any embodiment may be used in conjunction with all or part of any other embodiment.

Claims

1. A radio frequency low-noise amplifier, characterized in that, The RF low-noise amplifier includes an input matching module, a power amplification module, and an output matching module, as well as an RC attenuation module and an RC feedback module, which are connected in sequence. The input matching module is used to receive the RF signal and achieve input impedance matching. The power amplification module is used to amplify the RF signal. The output matching module is used to output the amplified RF signal. The first terminal of the RC feedback module is connected to the input terminal of the power amplification module, and the second terminal of the RC feedback module is connected to the output terminal of the power amplification module. The RC feedback module is used to dynamically adjust the gain and noise performance of the power amplification module as the frequency deteriorates. The RC attenuation module is electrically connected to the power amplification module and is used to adjust the required attenuation value at different gain levels. The output matching module includes a first inductor, a second inductor, a switch, a first capacitor, a second capacitor, a third capacitor, and a first adjustable resistor with an adjustable resistance value; The first terminal of the first inductor serves as the input terminal of the output matching module. The first terminal of the first inductor is connected to the output terminal of the power amplifier module, the control terminal of the switch, and the first terminal of the first adjustable resistor. The second terminal of the first inductor is connected to the first terminal of the second inductor and the first terminal of the third capacitor. The output terminal of the switch is connected to the first terminal of the first capacitor and the first terminal of the second capacitor. The second terminal of the second capacitor is connected to the second terminal of the first adjustable resistor and the second terminal of the second inductor, and is used to connect to the power supply. The second terminal of the first capacitor is connected to the second terminal of the third capacitor and serves as the output terminal of the output matching circuit. The RC attenuation module includes a fifth capacitor and a third adjustable resistor with an adjustable resistance value; the first terminal of the fifth capacitor is connected to the power amplifier module, the second terminal of the fifth capacitor is connected to the first terminal of the third adjustable resistor, and the second terminal of the third adjustable resistor is grounded.

2. The radio frequency low-noise amplifier according to claim 1, characterized in that, The RC feedback module includes a fourth capacitor and a second adjustable resistor with an adjustable resistance value; the first end of the fourth capacitor serves as the first end of the RC feedback module, the second end of the fourth capacitor is connected to the first end of the second adjustable resistor, and the second end of the second adjustable resistor serves as the second end of the RC feedback module.

3. The radio frequency low-noise amplifier according to claim 1, characterized in that, The power amplifier module includes a first MOSFET and a second MOSFET; the gate of the first MOSFET serves as the input terminal of the power amplifier module, the source of the first MOSFET is grounded, the drain of the first MOSFET is connected to the RC attenuation module and the source of the second MOSFET, the gate of the second MOSFET is used to connect to an external logic control circuit, and the drain of the second MOSFET serves as the output terminal of the power amplifier module.

4. The radio frequency low-noise amplifier according to claim 1, characterized in that, The input matching module includes a third inductor and a sixth capacitor; the first end of the third inductor serves as the input terminal of the input matching module, the second end of the third inductor is connected to the first end of the sixth capacitor, and the second end of the sixth capacitor serves as the output terminal of the input matching module.

5. The radio frequency low-noise amplifier according to claim 3, characterized in that, The radio frequency low noise amplifier further includes a fourth resistor, the first end of which is used to connect to the external logic control circuit, and the second end of which is connected to the gate of the first MOS transistor.

6. The radio frequency low-noise amplifier according to claim 3, characterized in that, The radio frequency low noise amplifier also includes a fifth resistor, the first end of which is used to connect to the external logic control circuit, and the gate of the second MOS transistor is connected to the external logic control circuit through the fifth resistor in series.

7. The radio frequency low-noise amplifier according to claim 3, characterized in that, The radio frequency low noise amplifier further includes a seventh adjustable capacitor with an adjustable capacitance value. The first end of the seventh adjustable capacitor is connected to the gate of the first MOS transistor, and the second end of the seventh adjustable capacitor is connected to the source of the first MOS transistor.

8. The radio frequency low-noise amplifier according to claim 3, characterized in that, The radio frequency low noise amplifier also includes a fourth adjustable inductor with an adjustable inductance value. The first end of the fourth adjustable inductor is connected to the source of the first MOS transistor, and the second end of the fourth adjustable inductor is grounded.

9. The radio frequency low-noise amplifier according to claim 1, characterized in that, The radio frequency low noise amplifier also includes an eighth capacitor, the first end of which is connected to the second end of the second inductor, and the second end of the eighth capacitor is grounded.

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