LED indicating device for X-ray detection

Abstract

An LED indicating device for X-ray detection comprises a transparent protective layer, a transparent conductive layer, an LED chip layer, an optical resistance layer, a back electrode layer, an outer electrode lead and a core electrode. The LED light source is characterized in that the LED chip layer is composed of LED chips, the LED chip layer is tightly clamped between the transparent conducting layer and the light resistance layer, and the back electrode layer or the core electrode is loaded behind the light resistance layer; 3-12V alternating current and direct current are loaded on the transparent conducting layer, the back electrode layer or the core electrode, the LED chip layer emits light, the resistance of the photoresistance layer changes when X-rays irradiate, and the luminous intensity of the LED chip changes accordingly.

Description

Technical Field

[0001] This invention belongs to the field of LED application technology. Background Technology

[0002] Existing X-ray imaging and detection methods typically use fluorescent materials, X-ray counters, and other methods. These devices are complex and expensive, and cannot be easily and quickly identified by the human eye. For radioactive material leaks in fields such as medical care, security inspection, and nuclear equipment, it is necessary to promptly warn personnel on-site. This invention utilizes the light intensity of LED devices to provide timely warnings of X-ray leaks.

[0003] An LED indicator device for X-ray detection includes: a transparent protective layer, a transparent conductive layer, an LED chip layer, a photoresistive layer, a back electrode layer, external electrode leads, and a core electrode; characterized in that: the LED chip layer is composed of LED chips, which are tightly sandwiched between the transparent conductive layer and the photoresistive layer, and a back electrode layer or a core electrode is loaded behind the photoresistive layer; when a 3-12V AC / DC current is applied to the transparent conductive layer, the back electrode layer, or the core electrode, the LED chip layer emits light; when X-rays irradiate the LED chip, the resistance of the photoresistive layer changes, causing the light intensity of the LED chip to change accordingly.

[0004] This invention can be widely used in daily radiation safety monitoring in medical, security inspection, nuclear energy and other places. The luminous intensity of LED semiconductor is higher than that of phosphor powder material coating, and its sensitivity is high. It is safe and reliable to use low voltage light emission. Summary of the Invention

[0005] An LED indicator device for X-ray detection includes: a transparent protective layer, a transparent conductive layer, an LED chip layer, a photoresistive layer, a back electrode layer, external electrode leads, and a core electrode; characterized in that: the LED chip layer is composed of LED chips, which are tightly sandwiched between the transparent conductive layer and the photoresistive layer, and a back electrode layer or a core electrode is loaded behind the photoresistive layer; when a 3-12V AC or DC current is applied to the transparent conductive layer, the back electrode layer, or the core electrode, the LED chip layer emits light; when X-rays irradiate the LED chip, the resistance of the photoresistive layer changes, causing the light intensity of the LED chip to change accordingly.

[0006] The transparent protective layer in this invention is one of PET, PI, TPU, PVC, or fluoroplastic film. The transparent protective layer completely encloses the LED indicator device for X-ray detection. Its surface is flat and its thickness is 0.05 mm to 0.5 mm. The protective layer can make the device more stable and durable. Fluorescent dyes can be loaded into the plastic of the protective layer to generate light conversion and color emission.

[0007] The transparent conductive layer in this invention is one of ITO, conductive polymer, or silver nanowires; the transparent conductive film layer is based on a transparent protective layer or LED chip layer and is formed on the surface of the transparent protective layer or LED chip layer by printing, coating, or vacuum sputtering, and is in close contact with the perpendicular electrode point of the LED light-emitting surface; the transparent conductive layer is transparent or semi-transparent.

[0008] The LED chip layer in this invention is composed of vertically structured LED chip particles arranged in a matrix or with varying spacing. The light-emitting surface of each LED chip particle is bonded to a transparent conductive film layer. Insulating ink is filled between the LED chip particles. While flip-chip structures can also be used, their luminous intensity is weaker, and the directionality of light emission is uncontrollable. The LED chip emits red, blue, and green visible light, or infrared light; visible light is suitable for direct human observation, while infrared light is suitable for long-distance observation and recording by camera equipment.

[0009] The back electrode layer in this invention is one of ITO, conductive polymer, silver nanowires, silver paste, copper paste, carbon paste, metal wires, or metal thin films. The back electrode layer is formed on the back surface of the LED chip layer by printing, coating, vacuum sputtering, or bonding, and is tightly bonded to the lower electrode point of the LED chip. When the back electrode layer is a metal wire, it allows for long-distance use of the device.

[0010] In this invention, the resistivity of the photoresistive layer decreases after X-ray irradiation, thereby increasing the luminous intensity of the LED chip. The photoresistive layer is made of zinc oxide and is formed through sputtering, coating, and printing. X-ray irradiation of the photoresistive layer reduces its impedance, allowing for a larger voltage load on the LED chip layer and thus increasing the luminous intensity.

[0011] The external electrode lead and core electrode in this invention are one of metal wire and metal thin film. The external electrode lead can make the continuous length of the linear device reach more than 100 meters.

[0012] The present invention comprises a transparent protective layer 1, a transparent conductive layer 2, an LED chip layer 3, a photoresistor layer 4, and a back electrode layer 5, which together form a planar X-ray detection LED device (Figure 2); or a metal wire core electrode 7, a photoresistor layer 4, an LED chip layer 3, a transparent conductive layer 2, an outer electrode lead 6, and a transparent protective layer 1 sleeve, which together form a linear X-ray detection LED device (Figure 1). Attached Figure Description

[0013] Figure 1 A cross-sectional view of an LED linear device for X-ray detection. Figure 2 A structural diagram of an LED planar device for X-ray detection. The structure shown in the diagram is as follows: 1. Transparent protective layer, 2. Transparent conductive layer, 3. LED chip layer, 4. Photoresistor layer, 5. Back electrode layer, 6. External electrode lead, 7. Core electrode. Detailed Implementation

[0014] An LED indicator device for X-ray detection includes: a transparent protective layer 1, a transparent conductive layer 2, an LED chip layer 3, a photoresistive layer 4, a back electrode layer 5, an external electrode lead 6, and a core electrode 7. The LED chip layer is composed of LED chips, tightly sandwiched between the transparent conductive layer and the photoresistive layer. A back electrode layer or a core electrode is loaded behind the photoresistive layer. A 3-12V AC or DC current is applied to the transparent conductive layer, the back electrode layer, or the core electrode, causing the LED chip layer to emit light. When X-rays irradiate the LED chip layer, the resistance of the photoresistive layer changes, causing a corresponding change in the luminous intensity of the LED chip.

[0015] The process for forming the planar X-ray detection LED device (Figure 2) in this invention is as follows: A transparent protective layer 1 is made of PET plastic film, and an ITO transparent conductive layer 2 is prepared on the PET plastic film. Then, a matrix-arranged LED chip layer 3 is printed on the transparent conductive layer 2. Next, a zinc oxide photoresistive layer 4 is printed on the surface of the LED chip layer. Finally, a back electrode layer 5 is prepared on the surface of the photoresistive layer, and then encapsulated using a PVC transparent protective layer. Electrode leads from the transparent conductive layer 2 and the back electrode layer 5 are connected to a 3-12V power supply. The LED chip emits low-brightness light, and when irradiated by X-rays, the corresponding portion of the LED chip emits high-brightness light.

[0016] The LED device for forming linear X-ray detection in this invention ( Figure 1 The process is as follows: Select copper or aluminum wire as the core electrode 7, with a diameter of 0.3-1 mm and a length of 1000 meters. A zinc oxide photoresistive layer 4 is continuously coated onto the surface of the core electrode 7. After drying, an LED chip layer 3 is coated onto the surface of the photoresistive layer. The LED chip particles in the LED chip layer are arranged at intervals or randomly distributed. A conductive polymer transparent conductive layer 2 is then coated onto the surface of the LED chip layer. Metal wire outer electrode leads 6 are continuously wound around the surface of the transparent conductive layer. Finally, an extruder is used to completely enclose the entire area with a PVC plastic transparent protective layer 1. The electrode leads of the transparent conductive layer 2 and the core electrode 7 are connected to a 3-12V power supply. The LED chip emits low-brightness light, and when irradiated with X-rays, the corresponding LED chip segment emits high-brightness light.

[0017] The transparent protective layer in this invention is one of PET, PI, TPU, PVC, or fluoroplastic film. This transparent protective layer completely encapsulates the LED indicator device for X-ray detection. Its surface is smooth, and its thickness is 0.05 mm to 0.5 mm. The protective layer ensures more stable and durable use of the device. Fluorescent dyes can be loaded into the plastic of the protective layer to generate light-converting colored light emission. The transparent conductive layer in this invention is one of ITO, conductive polymer, or silver nanowires. The transparent conductive film layer is formed on the surface of the transparent protective layer or LED chip layer through printing, coating, or vacuum sputtering, and is in close contact with the perpendicular electrode points of the LED light-emitting surface. The transparent conductive layer is transparent or semi-transparent. The LED chip layer in this invention is composed of vertically structured LED chip particles arranged in a matrix or with spacing. The light-emitting surface of the LED chip particles is bonded to the transparent conductive film layer. Insulating ink is filled between the LED chip particles. Of course, LED chip particles can also use flip-chip structures, but their luminous intensity is weaker, and the luminous directionality is uncontrollable.

[0018] The back electrode layer in this invention is one of ITO, conductive polymer, silver nanowires, silver paste, copper paste, carbon paste, metal wires, or metal thin films. The back electrode layer is formed on the back surface of the LED chip layer by printing, coating, vacuum sputtering, or bonding, and is tightly bonded to the lower electrode point of the LED chip. When the back electrode layer is a metal wire, it allows for long-distance use of the device.

[0019] In this invention, the resistivity of the photoresistive layer decreases after X-ray irradiation, thereby increasing the luminous intensity of the LED chip. The photoresistive layer is made of zinc oxide and is formed through sputtering, coating, and printing. X-ray irradiation of the photoresistive layer reduces its impedance, allowing for a larger voltage load on the LED chip layer and thus increasing the luminous intensity.

[0020] The external electrode lead and core electrode in this invention are either metal wires or metal films. The external electrode lead allows the continuous length of the linear device to reach over 100 meters. The sequential structure of this invention consists of a transparent protective layer 1, a transparent conductive layer 2, an LED chip layer 3, a photoresistor layer 4, and a back electrode layer 5, forming a planar X-ray detection LED device (Figure 2); the sequential structure consists of a metal wire core electrode 7, a photoresistor layer 4, an LED chip layer 3, a transparent conductive layer 2, an external electrode lead 6, and a transparent protective layer 1 sleeve, forming a linear X-ray detection LED device (Figure 1). The advantages of this invention are:

[0021] 1) The unique structure of this invention enables the LED light-emitting device to directly detect and display X-rays, indicating the location and intensity of X-ray leakage during the day or night, and displaying the intensity of X-ray radiation based on the brightness of the LED light. It can be used for large-area imaging and detection, and can also be used for sealed slits with a continuous length of over 100 meters.

[0022] 2) The light-emitting device of this invention has a simple structure, low cost, is easy to move and use, can be freely cut, is unaffected by the environment, and can also be used for underwater detection. The LED chip emits red, blue, and green visible light, which is suitable for direct observation by the human eye. Infrared light is suitable for long-distance observation and recording by camera equipment, such as mobile phones and monitors. The infrared signal transmission distance can reach more than 1000 meters for safe recording and observation. This invention can also observe other high-energy particle radiation leakage.

[0023] 3) This invention can be widely used in fields such as medical treatment, security inspection, nuclear power plants, and field exploration, especially for the observation of mobile radioactive sources, enabling long-distance early warning.

[0024] Having described the preferred embodiments of the present invention above, it should be understood by those skilled in the art that any changes and modifications made to the present invention without departing from its spirit and scope are within the scope of the present invention.

Claims

1. An LED indicator device for X-ray detection, comprising: The LED chip consists of a transparent protective layer, a transparent conductive layer, an LED chip layer, a photoresistor layer, a back electrode layer, external electrode leads, and a core electrode. The LED chip layer is composed of LED chips, tightly sandwiched between the transparent conductive layer and the photoresistor layer. A back electrode layer or core electrode is loaded behind the photoresistor layer. A 3-12V AC / DC current is applied to the transparent conductive layer, back electrode layer, or core electrode, causing the LED chip layer to emit light. When exposed to X-rays, the resistance of the photoresistor layer changes, resulting in a change in the luminous intensity of the LED chip.

2. The LED device for X-ray detection as described in claim 1, characterized in that: it is transparent. The protective layer is one of PET, PI, TPU, PVC, or fluoroplastic film. The transparent protective layer completely wraps the LED indicator device for X-ray detection. Its surface is flat and its thickness is 0.05 mm to 0.5 mm.

3. The LED device for X-ray detection as described in claim 1, characterized in that: it is transparent. The conductive layer is one of ITO, conductive polymer, or silver nanowires; the transparent conductive film layer is based on the transparent protective layer or LED chip layer and is formed on the surface of the transparent protective layer or LED chip layer by printing, coating, or vacuum sputtering, and is in close contact with the vertical electrode point of the LED light-emitting surface.

4. The LED device for X-ray detection as described in claim 1, characterized in that: The LED chip layer is composed of vertically structured LED chip particles arranged in a matrix or with varying spacing. The light-emitting surface of the LED chip particles is bonded to a transparent conductive film layer, and insulating ink is filled between the LED chip particles.

5. An LED device for X-ray detection as described in claim 1, characterized in that: The back electrode layer is The back electrode layer is formed on the back surface of the LED chip layer by printing, coating, vacuum sputtering, or bonding, and is closely attached to the lower electrode point of the LED chip. It is composed of one of the following: ITO, conductive polymer, silver nanowire, silver paste, copper paste, carbon paste, metal wire, or metal film.

6. The LED device for X-ray detection as described in claim 1, characterized in that: When the photoresistive layer is irradiated with X-rays, its resistivity decreases, which increases the luminous intensity of the LED chip. The photoresistive layer is made of zinc oxide and is formed by sputtering, coating, and printing.

7. An LED device for X-ray detection as described in claim 1, characterized in that: LED chips emit red, blue, and green visible light, or infrared light; the external electrode leads and core electrodes are either metal wires or metal films.

8. An LED device for X-ray detection as described in claim 1, characterized in that: The structure consists of a transparent protective layer, a transparent conductive layer, an LED chip layer, a photoresistor layer, and a back electrode layer, which together form a planar X-ray detection LED device. The structure also consists of an aluminum wire core electrode, a photoresistor layer, an LED chip layer, a transparent conductive layer, an external electrode lead, and a transparent protective sleeve, which together form a linear X-ray detection LED device.

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