Display panel and display device

By setting a filter layer and a color resist within the vias of the display panel, and utilizing the mixing effect of different colors, the problem of light leakage in dark states in VR products is solved, and the contrast of the display is improved.

CN121679946APending Publication Date: 2026-03-17WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
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Patent Information

Application Number
CN202512040346.5
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-12-31
Publication Date
2026-03-17

AI Technical Summary

Technical Problem

In existing VR products, the perforation design causes light leakage in the dark state of the light-transmitting area, which is difficult to solve by effective blocking methods and affects the contrast performance of the display.

Method used

A filter layer and a color resist are set inside the via of the display panel. By utilizing the light mixing effect of different colored filter and color resist, the range of light absorption wavelengths is increased to reduce light leakage in dark states.

Benefits of technology

By superimposing the filter layer and the color resist layer, the range of light absorption wavelengths is increased, dark light leakage is reduced, and the contrast performance of the display is improved.

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Abstract

The invention discloses a display panel and a display device, the display panel comprises a substrate, an active layer, an insulating layer, a filter layer and a first color resistance part, the active layer is located on the substrate, and the insulating layer is located on the side, away from the substrate, of the active layer. The insulating layer is provided with a first connecting hole, and the first connecting hole is exposed out of one end of the active layer. The light filtering layer is located on the side, away from the substrate, of the insulating layer, the light filtering layer comprises a light filtering part located in the first connecting hole, and the first color resistance part is arranged in the first connecting hole and located between the light filtering part and the active layer. And in the same first connecting hole, the color of the first color resistance part is different from that of the light filtering part. Therefore, the superposition of the first color resistance part and the light filtering part can form wide-spectrum absorption, and the range of an absorption wave band in the first connecting hole is enlarged, so that dark-state light leakage of the first connecting hole is reduced.
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Description

Technical Field

[0001] This application relates to the field of display technology, and more particularly to a display panel and a display device. Background Technology

[0002] With the development of Augmented Reality (AR) and Virtual Reality (VR) products, the demand for display resolution continues to increase. Based on existing devices, the fine design and manufacturing process of small-size, high-resolution displays directly affect the final product's appearance.

[0003] Current VR products all adopt a Color On Array (COA) architecture, where the color filter layer is fabricated on the array substrate, and the vias connecting the active layer are designed in the light-transmitting area. In dark conditions, light will be transmitted due to depolarization, causing light leakage at the vias. However, because the vias are designed in the light-transmitting area (i.e., the opening area), they cannot be effectively blocked by other means. Summary of the Invention

[0004] This application provides a display panel that achieves a dark-state light-blocking effect of the first connection hole by mixing the light of a filter portion and a first color resist portion filled in the first connection hole.

[0005] This application provides a display panel, comprising: a substrate; an active layer located on the substrate; an insulating layer located on the side of the active layer away from the substrate, the insulating layer having a first connection hole exposing one end of the active layer; a light filter layer located on the side of the insulating layer away from the substrate, the light filter layer including a light filter portion located within the first connection hole; and a first color resist portion disposed within the first connection hole, located between the bottom of the first connection hole and the light filter portion; wherein, within the same first connection hole, the color of the first color resist portion is different from the color of the light filter portion.

[0006] In some embodiments, it further includes: a second color resist portion located within the first connection hole and between the first color resist portion and the light filter portion; wherein, within the same first connection hole, the colors of the second color resist portion, the first color resist portion, and the light filter portion are all different.

[0007] In some embodiments, the thickness of the filter portion is greater than the thickness of the first color resist portion, and the thickness of the filter portion is greater than the thickness of the second color resist portion.

[0008] In some embodiments, the first connection hole includes a first through hole, a second through hole, and a third through hole arranged adjacent to each other, and the filter layer includes a first filter portion located in the first through hole, a second filter portion located in the second through hole, and a third filter portion located in the third through hole. The first filter portion, the second filter portion, and the third filter portion are different colors. The third through hole is provided with a first color resist portion and a second color resist portion, and the second through hole is provided with a first color resist portion.

[0009] In some embodiments, the color of the first filter portion is the same as the color of the first color resist portion, and the color of the second color resist portion is the same as the color of the second filter portion.

[0010] In some embodiments, a third color resist portion is further included; the third color resist portion is disposed in the first via, and the third color resist portion is different in color from the first filter portion; the third color resist portion and the first color resist portion are disposed in the second via, and the first color resist portion is located between the third color resist portion and the second filter portion; the third via is disposed in the third color resist portion, the first color resist portion and the second color resist portion, and the first color resist portion is located between the third color resist portion and the second color resist portion.

[0011] In some embodiments, the third color resist portion has the same color as the second filter portion or the third filter portion.

[0012] In some embodiments, the filter layer further includes: a pixel electrode layer located on the side of the filter layer facing away from the substrate; a first conductive layer located on the inner wall of the first connection hole and connected to one side of the active layer, the first conductive layer further including a connection portion extending to the surface of the insulating layer; and a second connection hole penetrating the filter layer, the connection portion being connected to the pixel electrode layer through the second connection hole.

[0013] In some embodiments, the device further includes: a hydrogen barrier layer located between the first conductive layer and the filter layer, and extending into the first connection hole; wherein the second connection hole also penetrates the hydrogen barrier layer.

[0014] This application also provides a display device, including the display panel in any of the above embodiments.

[0015] In the display panel of this application embodiment, the light filter layer includes a light filter portion located within a first connection hole, and a first color resist portion located within the first connection hole and between the light filter portion and the active layer. Furthermore, the color of the first color resist portion within the same connection hole differs from the color of the light filter portion, causing the first color resist portion and the light filter portion to absorb light within different wavelength ranges. Therefore, the superposition of the first color resist portion and the light filter portion can form a broad-spectrum absorption, increasing the absorption wavelength range within the first connection hole, thereby reducing dark-state light leakage from the first connection hole.

[0016] Other features and advantages of this application will be described in detail in the following detailed description section. Attached Figure Description To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0017] To gain a more complete understanding of this application and its beneficial effects, the following description will be provided in conjunction with the accompanying drawings, wherein the same reference numerals in the following description denote the same parts.

[0018] Figure 1 This is a top view structural diagram of a display panel provided in some embodiments of this application; Figure 2 yes Figure 1 A cross-sectional view of the central display panel at point A-A1; Figure 3 These are spectral distribution diagrams of red, green, and blue light provided in some embodiments of this application; Figure 4 yes Figure 1 A schematic diagram of the cross-sectional structure of the central display panel along line B-B1; Figures 5 to 6 yes Figure 4 A cross-sectional structural diagram of the display panel during its fabrication process; Figure 7 yes Figure 1 Another cross-sectional view of the central display panel along section B-B1; Figures 8 to 10 yes Figure 7 A cross-sectional structural diagram of the display panel during its manufacturing process; Figure 11 This is a schematic diagram of the structure of a display device provided in some embodiments of this application.

[0019] Explanation of reference numerals in the attached figures: 100. Display panel; 101. Light-transmitting area; 102. Light-shielding area; 1. Array substrate; 10. Substrate; 11. First gate insulating layer; 12. First gate; 13. Second gate insulating layer; 14. Second gate; 20. Active layer; 30. Insulating layer; 31. Third gate insulating layer; 32. First dielectric layer; 33. Second dielectric layer; 301. First connecting hole; 301a. First via; 301b. Second via; 301c. Third via; 302. Metal via; 40. Filter layer; 40a. Filter section; 40b. Extension section; 41. First filter layer; 41a. First filter section; 42. Second filter layer; 42a. Second filter section; 43. Third filter layer; 43a. Third filter section; 51. First color resist section; 52. Second color resist section; 53. Third color resist section; 60. Metal layer; 61. Source electrode; 62. Data line; 71. First conductive layer; 71a. Connecting part; 80. Pixel electrode layer; 81. Second connection hole; 91. Planarization layer; 92. Passivation layer; 93. Hydrogen barrier layer; 200. Display device. Detailed Implementation

[0020] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the protection scope of this application.

[0021] As product demand increases, the requirements for high pixel density (Pixels Per Inch, PPI) and high-quality products are becoming increasingly stringent. Due to the linewidth requirements of high PPI, the size of thin-film transistors (TFTs) is becoming increasingly limited, including the critical dimension (CD) of vias within the insulating layer. However, the smaller the vias, the more stringent the process requirements become. Current processes can achieve a via size of about 1.4µm on the bottom, but with process variations, there can be fluctuations of about ±0.5µm, which can still easily lead to light leakage in dark conditions, affecting the contrast performance of VR products.

[0022] Currently, simply maximizing the CD and taper angle (i.e., the inclination angle of the hole sidewall) of the via to the extreme, and compressing the light leakage area to the limit, makes it difficult to further improve the current situation of dark light leakage inside the via.

[0023] Based on this, this application provides a display panel, including: a substrate; an active layer located on the substrate; an insulating layer located on the side of the active layer away from the substrate, the insulating layer having a first connection hole exposing one end of the active layer; a light filter layer located on the side of the insulating layer away from the substrate, the light filter layer including a light filter portion located within the first connection hole; and a first color resist portion disposed within the first connection hole and located between the light filter portion and the active layer; wherein, within the same first connection hole, the color of the first color resist portion is different from the color of the light filter portion.

[0024] In the display panel of this application embodiment, the light filter layer includes a light filter portion located within a first connection hole, and a first color resist portion located within the first connection hole and between the light filter portion and the active layer. Furthermore, the color of the first color resist portion within the same connection hole differs from the color of the light filter portion, causing the first color resist portion and the light filter portion to absorb light within different wavelength ranges. Therefore, the superposition of the first color resist portion and the light filter portion can form a broad-spectrum absorption, increasing the absorption wavelength range within the first connection hole, thereby reducing dark-state light leakage from the first connection hole.

[0025] The structure of the display panel provided in the embodiments of this application will be described below with reference to the accompanying drawings.

[0026] Please see Figure 1 and Figure 2 , Figure 1 This is a top view structural diagram of a display panel provided in some embodiments of this application. Figure 2 yes Figure 1 A cross-sectional view of the central display panel at point A-A1.

[0027] The display panel 100 includes a substrate 10, an active layer 20, an insulating layer 30, a light filter layer 40, and a first color resist portion 51. The active layer 20 is located on the substrate 10, and the insulating layer 30 is located on the side of the active layer 20 facing away from the substrate 10. The insulating layer 30 has a first connection hole 301, which exposes one end of the active layer 20. The light filter layer 40 is located on the side of the insulating layer 30 facing away from the substrate 10, and includes a light filter portion 40a located within the first connection hole 301. The first color resist portion 51 is disposed within the first connection hole 301 and is located between the light filter portion 40a and the active layer 20. Within the same first connection hole 301, the color of the first color resist portion 51 is different from the color of the light filter portion 40a.

[0028] The display panel 100 can be a liquid crystal panel, and the filter layer 40 is disposed on the array substrate 1 (including the substrate 10, the active layer 20 and the insulating layer 30). The substrate 10 can include one or a combination of a glass substrate and a flexible substrate.

[0029] The active layer 20 may be made of at least one of amorphous silicon, polycrystalline silicon, and metal oxides. Polycrystalline silicon may be obtained by laser annealing crystallization of amorphous silicon or other crystallization methods. The metal oxide may include at least one of indium, zinc, tungsten, tin, gallium, and aluminum. Exemplarily, the metal oxide materials may include, but are not limited to, indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), indium gallium oxide (IGO), indium zinc oxide (IZO), aluminum indium zinc oxide (AIZO), and aluminum tin zinc oxide (ATZO), which are metal oxides with low leakage current.

[0030] The array substrate 1 may further include a first gate insulating layer 11, a first gate 12, a second gate insulating layer 13, and a second gate 14. The first gate insulating layer 11 is located on the substrate 10, and the first gate 12 is located on the side of the first gate insulating layer 11 facing away from the substrate 10. The second gate insulating layer 13 is located on the side of the first gate insulating layer 11 facing away from the substrate 10 and covers the first gate 12. The second gate 14 is located on the side of the active layer 20 facing away from the substrate 10.

[0031] Both the first gate insulating layer 11 and the second gate insulating layer 13 can be made of inorganic materials, such as SiO2. X SiN X One of SiNO. The first gate 12 and the second gate 14 can be made of one of the following metals and their alloys: Cr, W, Ti, Ta, Mo, Al, Cu, etc.

[0032] In some embodiments, the insulating layer 30 is located on the side of the active layer 20 opposite to the substrate 10. The insulating layer 30 may include a third gate insulating layer 31, a first dielectric layer 32, and a second dielectric layer 33. The third gate insulating layer 31 is located on the side of the second gate insulating layer 13 opposite to the substrate 10 and covers the active layer 20. The second gate 14 is located on the side of the third gate insulating layer 31 opposite to the substrate 10. The first dielectric layer 32 is located on the side of the third gate insulating layer 31 opposite to the substrate 10 and covers the second gate 14. The second dielectric layer 33 is located on the side of the first dielectric layer 32 opposite to the substrate 10.

[0033] The materials of the third gate insulating layer 31, the first dielectric layer 32, and the second dielectric layer 33 may include, but are not limited to, SiO2. X or SiN X Or inorganic materials such as Al2O3.

[0034] The display panel 100 may further include a metal layer 60, which is located on the first dielectric layer 32. The metal layer 60 includes a source electrode 61, which is connected to the other end of the active layer 20 through a metal via 302, i.e., the first connection hole 301 and the metal via 302 are located on opposite sides of the active layer 20.

[0035] It should be noted that, in Figure 2 The metal layer 60 is not actually visible in the cross-sectional view, so the structure of the metal layer 60 is represented by a dashed line.

[0036] The display panel 100 may further include an opposing substrate and a light-shielding layer, the opposing substrate being disposed opposite to the array substrate 1. In some embodiments, the light-shielding layer may be located on the side of the opposing substrate facing the array substrate 1, and the light-shielding layer may include a black matrix (BM).

[0037] The display panel 100 includes a light-transmitting area 101 and a light-shielding area 102. The light filter layer 40 is located in the light-transmitting area 101, and the light-shielding layer is located in the light-shielding area 102. The first connection hole 301 is located in the light-transmitting area 101, so the light filter layer 40 can fill the first connection hole 301.

[0038] See Figure 1 The metal layer 60 also includes a data line 62, which is located in the light-shielding area 102, and the area between adjacent data lines 62 is the light-transmitting area 101.

[0039] Multiple data lines 62 can extend along a first direction (vertical direction as shown in the figure) and be arranged at intervals along a second direction (left-right direction as shown in the figure). Both the first and second directions are parallel to the surface of the substrate 10 and intersect each other. One end of the active layer 20 is located between adjacent data lines 62 to achieve connection with the conductive layer of the light-transmitting area 101 (the first conductive layer 71 described below). The other end of the active layer 20 extends above the data lines 62 and overlaps with them.

[0040] The display panel 100 may further include a first conductive layer 71, which is located on the inner wall of the first connection hole 301 and connected to one end of the active layer 20. The first conductive layer 71 also includes a connection portion 71a extending to the surface of the insulating layer 30.

[0041] In some embodiments, the first conductive layer 71 includes a transparent conductive layer, such as indium tin oxide (ITO). Since the first connection hole 301 is located in the light-transmitting area 101, using a transparent conductive layer for the first conductive layer 71 can improve the aperture ratio. Furthermore, in this embodiment, the first conductive layer 71 is directly connected to the active layer 20, rather than using a metal layer 60 to connect the first conductive layer 71 and the active layer 20, which can further improve the aperture ratio.

[0042] The display panel 100 may further include a pixel electrode layer 80 and a second connection hole 81. The pixel electrode layer 80 is located on the side of the light filter layer 40 facing away from the substrate 10. The second connection hole 81 penetrates the light filter layer 40, and the connection portion 71a is connected to the pixel electrode layer 80 through the second connection hole 81. Figure 1 and Figure 2 As shown, the second connection hole 81 is located above the active layer 20.

[0043] The display panel 100 may further include a planarization layer 91 and a passivation layer 92. The planarization layer 91 is located on the side of the filter layer 40 facing away from the substrate 10, and the passivation layer 92 is located on the side of the planarization layer 91 facing away from the substrate 10. The pixel electrode layer 80 is located on the side of the passivation layer 92 facing away from the substrate 10, and the second connection hole 81 also penetrates the passivation layer 92 and the planarization layer 91.

[0044] The display panel 100 may further include a hydrogen barrier layer 93, which is located between the first conductive layer 71 and the filter layer 40 and extends into the first connection hole 301. The second connection hole 81 also penetrates the hydrogen barrier layer 93.

[0045] The hydrogen barrier layer 93 is used to prevent hydrogen in the passivation layer 92 from diffusing downwards to the active layer 20, thereby reducing hydrogen damage to the active layer 20. For example, the material of the hydrogen barrier layer 93 may include silicon oxide and / or silicon nitride.

[0046] See Figure 2 In some embodiments, the first color resist portion 51 is located between the hydrogen blocking layer 93 and the filter portion 40a at the bottom of the first connection hole 301. Since the first color resist portion 51 and the filter portion 40a are different in color, the light absorption band of the first color resist portion 51 is different from that of the filter portion 40a. This can increase the range of light absorption bands and thus reduce the range of transmitted light bands, thereby reducing dark-state light leakage in the first connection hole 301.

[0047] It should be noted that the color of the filter section 40a indicates that it allows light of the corresponding color to pass through. For example, if the filter section 40a is red, then red light is allowed to pass through, while other wavelengths of light outside the red light band are filtered out (i.e. absorbed). The color of the first color resist section 51 also indicates that it allows light of the corresponding color to pass through, while other wavelengths of light outside the band range of the corresponding color are filtered out (i.e. absorbed).

[0048] For example, if the color of the filter section 40a is red, then the color of the first color resist section 51 can be green or blue; if the color of the filter section 40a is blue, then the color of the first color resist section 51 can be red or green; if the color of the filter section 40a is green, then the color of the first color resist section 51 can be red or blue.

[0049] In some embodiments, the thickness of the filter portion 40a is greater than the thickness of the first color resist portion 51. For example, the thickness of the first color resist portion 51 is 0.1um to 0.3um, so as not to affect the white state display, form dark spots, and avoid various mura caused by light blocking.

[0050] Please see Figure 3 , Figure 3 These are spectral distribution diagrams of red, green, and blue light provided in some embodiments of this application.

[0051] Depend on Figure 3 It is known that red, green, and blue light have wavelengths in different bands. Red color resist allows red light to pass through, green color resist allows green light to pass through, and blue color resist allows blue light to pass through. When any two colors of color resist are superimposed, the range of light absorption bands can be expanded, and the range of light transmission bands can be reduced. Therefore, the light-blocking principle of different colored color resists can be used. Thus, in this embodiment, when the color of the filter part 40a is different from that of the first color resist part 51, a light-blocking effect can also be achieved, thereby reducing dark-state light leakage within the first connection hole 301. It should be noted that the filter part 40a is also made of color resist material.

[0052] Figure 3 This indicates that the overlap between the green and blue light bands is relatively large, the overlap between the green and red light bands is relatively small, and the overlap between the red and blue light bands is the smallest. Therefore, when only two color filters are superimposed, the combination of red and blue color filters has the best light-blocking effect.

[0053] Therefore, in some embodiments, when the color of the filter portion 40a is red, the color of the first color resist portion 51 can be blue; when the color of the filter portion 40a is blue, the color of the first color resist portion 51 is red; when the color of the filter portion 40a is green, the color of the first color resist portion 51 is red, thereby improving the light-blocking effect.

[0054] In some embodiments, the display panel 100 further includes a second color resist portion ( Figure 2 (Not shown), the second color resist portion is located within the first connection hole 301, and between the first color resist portion 51 and the filter portion 40a. Within the same first connection hole 301, the second color resist portion, the first color resist portion 51, and the filter portion 40a are all different colors. By superimposing three different colors of color resist, the wavelength range of transmitted light can be further reduced, and the dark-state light leakage phenomenon can be further improved.

[0055] In some embodiments, the thickness of the filter portion 40a is greater than the thickness of the second color resist portion. For example, the thickness of the second color resist portion is 0.1um to 0.3um, so as not to affect the white state display and form dark spots.

[0056] Please see Figure 4 , Figure 4 yes Figure 1 A cross-sectional view of the central display panel along line B-B1. It should be noted that... Figure 4 This is mainly to show the overall light-blocking situation in the multiple first connection holes 301 corresponding to the different colored filter layers 40, therefore Figure 4 Only data line 62 and filter layer 40 are shown, while other film layers are omitted.

[0057] The first connection hole 301 is located between two adjacent data lines 62, that is, in the light-transmitting area 101. The filter layer 40 includes a filter portion 40a and an extension portion 40b connected together. The filter portion 40a fills the first connection hole 301, and the extension portion 40b extends from the light-transmitting area 101 to the light-shielding area 102. Adjacent filter layers 40 can be connected in the light-shielding area 102.

[0058] The plurality of first connection holes 301 include a first via 301a, a second via 301b, and a third via 301c disposed adjacently, with each via 301a, 301b, and 301c located between two adjacent data lines 62. The filter layer 40 includes a first filter portion 41a located within the first via 301a, a second filter portion 42a located within the second via 301b, and a third filter portion 43a located within the third via 301c. The plurality of filter layers 40 may include a first filter layer 41 corresponding to the first via 301a, a second filter layer 42 corresponding to the second via 301b, and a third filter layer 43 corresponding to the third via 301c, wherein the first filter layer 41 includes the first filter portion 41a, the second filter layer 42 includes the second filter portion 42a, and the third filter layer 43 includes the third filter portion 43a.

[0059] The first filter 41a, the second filter 42a, and the third filter 43a have different colors. For example, the first filter 41a is red, the second filter 42a is green, and the third filter 43a is blue, to form R sub-pixels, G sub-pixels, and B sub-pixels. The R sub-pixels, G sub-pixels, and B sub-pixels can form a single pixel unit.

[0060] In some embodiments, the third via 301c is provided with a first color resist portion 51 and a second color resist portion 52, and the second via 301b is provided with the first color resist portion 51. That is, the dark-state light leakage phenomenon of the first connection hole 301 corresponding to two sub-pixels (e.g., B sub-pixel and G sub-pixel) in a pixel unit can be improved.

[0061] In some embodiments, the color of the first filter portion 41a is the same as the color of the first color resist portion 51, and the color of the second color resist portion 52 is the same as the color of the second filter portion 42a. Therefore, the first color resist portion 51 can be formed with the same material and the same spin coating process as the first filter portion 41a, and the second color resist portion 52 can be formed with the same material and the same coating process as the second filter portion 42a.

[0062] Please see Figures 5 to 6 , Figures 5 to 6 yes Figure 4 A cross-sectional structural diagram of the display panel during its fabrication process. In this embodiment, the first filter layer 41 is red, the second filter layer 42 is green, and the third filter layer 43 is blue; that is, the first filter portion 41a is red, the second filter portion 42a is green, and the third filter portion 43a is blue.

[0063] See Figure 5 After forming multiple first connecting holes 301 (including first vias 301a, second vias 301b, and third vias 301c), a negative red photoresist is first coated. Then, an exposure process is performed, with the R sub-pixel region (the region corresponding to the first via 301a) being normally exposed, while other regions are not exposed. Next, a development process is performed, where the red photoresist in the R sub-pixel region is retained to form a red first filter layer 41, while the red photoresist in other regions is dissolved. By controlling the development conditions, the red photoresist portion is retained within the second vias 301b and third vias 301c, forming a first color resist portion 51 located at the bottom of the second vias 301b and third vias 301c. Finally, a curing process is performed. Therefore, the formation of the first color resist portion 51 does not require an additional process and can be formed together with the first filter portion 41a.

[0064] See Figure 6A negative green photoresist is coated. Then, an exposure process is performed, with the G sub-pixel area exposed normally, while the R and B sub-pixel areas are not exposed. Next, a development process is performed, where the green photoresist in the R sub-pixel area is retained to form a green second filter layer 42. By controlling the development conditions, a portion of the green photoresist in the B sub-pixel area is retained within the third via 301c, forming a second color resist portion 52 located at the bottom of the third via 301c. Finally, a curing process is performed. Therefore, the formation of the second color resist portion 52 does not require an additional process and can be formed together with the second filter portion 42a.

[0065] See Figure 4 A negative blue photoresist is coated, followed by exposure, development and curing processes to form a blue third filter layer 43 in the B sub-pixel region.

[0066] Please see Figure 7 , Figure 7 yes Figure 1 A schematic diagram of another cross-sectional structure of the central display panel along line B-B1. This embodiment is similar to... Figure 4 The difference in this embodiment is that the display panel also includes a third color resist portion 53.

[0067] The display panel also includes a third color resist portion 53. The third color resist portion 53 is disposed within the first via 301a. The third color resist portion 53 is a different color from the first light filter portion 41a; therefore, the superposition of the third color resist portion 53 and the first light filter portion 41a can block light from the first via 301a. The second via 301b contains the third color resist portion 53 and the first color resist portion 51, with the first color resist portion 51 located between the third color resist portion 53 and the second light filter portion 42a. The third via 301c contains the third color resist portion 53, the first color resist portion 51, and the second color resist portion 52, with the first color resist portion 51 located between the third color resist portion 53 and the second color resist portion 52.

[0068] This embodiment is in Figure 4 Based on this, a third color resist part 53 is added to the bottom of the first via 301a, the second via 301b and the third via 301c. This not only improves the light-blocking effect of the second via 301b and the third via 301c, but also blocks the light of the first via 301a, thus achieving the dark state light-blocking effect of the first connecting hole 301 within the RGB sub-pixel.

[0069] In some embodiments, the third color resist 53 has the same color as the second filter 42a or the third filter 43a. For example, when the first filter 41a is red, the third color resist 53 can be blue, because the spectral overlap between red and blue light is smaller, resulting in better light-blocking effect.

[0070] In some embodiments, the thickness of the filter portion 40a is greater than the thickness of the third color resist portion 53. For example, the thickness of the third color resist portion 53 is 0.1um to 0.3um, so as not to affect the white state display and form dark spots.

[0071] Please see Figures 8 to 10 , Figures 8 to 10 yes Figure 7 A cross-sectional structural diagram of the display panel during its fabrication process. In this embodiment, the first filter layer 41 is red, the second filter layer 42 is green, the third filter layer 43 is blue, and the third color resist 53 is blue. Specifically, the first filter layer 41a is red, the second filter layer 42a is green, the third filter layer 43a is blue, the first color resist 51 is red, and the second color resist 52 is green.

[0072] See Figure 8 After forming multiple first connecting holes 301 (including first vias 301a, second vias 301b, and third vias 301c), a negative blue photoresist is first coated. Using a non-exposure process, the blue photoresist outside the holes is developed away by utilizing the internal topography of the holes, forming a third color resist portion 53 located at the bottom of the first vias 301a, second vias 301b, and third vias 301c. Finally, a curing process is performed.

[0073] See Figure 9 A negative red photoresist is coated. Then, an exposure process is performed, with the R sub-pixel region (the region corresponding to the first via 301a) being normally exposed, while other regions are not exposed. Next, a development process is performed, where the red photoresist in the R sub-pixel region is retained to form the first red filter layer 41, while the red photoresist in other regions is dissolved. By controlling the development conditions, the red photoresist portion is retained within the second via 301b and the third via 301c, forming the first color resist portion 51 located at the bottom of the second via 301b and the third via 301c. Finally, a curing process is performed.

[0074] See Figure 10 A negative green photoresist is coated. Then, an exposure process is performed, with the G sub-pixel area exposed normally, while the R and B sub-pixel areas are not exposed. Next, a development process is performed, where the green photoresist in the R sub-pixel area is retained to form a green second filter layer 42. By controlling the development conditions, a portion of the green photoresist in the B sub-pixel area is retained within the third via 301c, forming a second color resist portion 52 located at the bottom of the third via 301c. Finally, a curing process is performed.

[0075] In the manufacturing process of the display panel provided in this application embodiment, different numbers of color resist parts are formed in different first connection holes using existing processes. For example, three (or two) color resist parts are formed in the third via, two (or one) color resist parts are formed in the second via, and no color resist parts are formed in the first via (or one is formed).

[0076] This application also provides a display device, which includes the display panel in any of the above embodiments.

[0077] Please see Figure 11 , Figure 11 This is a schematic diagram of the structure of a display device provided in some embodiments of this application.

[0078] The display device 200 includes a device body and a display panel 100, which can be the display panel 100 in any of the above embodiments. In addition, the device body may include a frame, driving components, power supply, etc., and the display device can be a mobile phone, tablet, television, or other display terminal, which is not limited here.

[0079] In the description of this application, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more features. In the description of this application, "multiple" means two or more, unless otherwise explicitly specified.

[0080] In the above embodiments, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions in other embodiments.

[0081] The embodiments, implementation methods, and related technical features of this application can be combined and substituted for each other without conflict.

[0082] The above are merely preferred embodiments of this application and are not intended to limit this application in any way. Any simple modifications, equivalent changes, and alterations made to the above embodiments based on the technical essence of this application without departing from the scope of the technical solution of this application shall still fall within the scope of the technical solution of this application.

Claims

1. A display panel (100), characterized by The application relates to a color filter, which comprises the following parts: a substrate (10); an active layer (20) on the substrate (10); an insulating layer (30) on the side of the active layer (20) away from the substrate (10), wherein the insulating layer (30) is provided with a first connecting hole (301) exposing one end of the active layer (20); a filter layer (40) on the side of the insulating layer (30) away from the substrate (10), wherein the filter layer (40) comprises a filter part (40a) in the first connecting hole (301); a first color resist part (51) in the first connecting hole (301) and between the filter part (40a) and the active layer (20); wherein the color of the first color resist part (51) is different from that of the filter part (40a) in the same first connecting hole (301).

2. The display panel (100) according to claim 1, characterized in that The application further comprises: a second color resist part (52) in the first connecting hole (301) and between the first color resist part (51) and the filter part (40a); wherein the colors of the second color resist part (52), the first color resist part (51) and the filter part (40a) are all different in the same first connecting hole (301).

3. The display panel (100) according to claim 2, characterized in that The thickness of the filter part (40a) is greater than that of the first color resist part (51), and the thickness of the filter part (40a) is greater than that of the second color resist part (52).

4. The display panel (100) according to claim 2, characterized in that The first connecting hole (301) comprises a first via hole (301a), a second via hole (301b) and a third via hole (301c) arranged adjacently, the filter layer (40) comprises a first filter part (41a) in the first via hole (301a), a second filter part (42a) in the second via hole (301b) and a third filter part (43a) in the third via hole (301c), and the colors of the first filter part (41a), the second filter part (42a) and the third filter part (43a) are different; the first color resist part (51) and the second color resist part (52) are arranged in the third via hole (301c), and the first color resist part (51) is arranged in the second via hole (301b).

5. The display panel (100) according to claim 4, characterized in that The color of the first filter part (41a) is the same as that of the first color resist part (51), and the color of the second color resist part (52) is the same as that of the second filter part (42a).

6. The display panel (100) according to claim 4, characterized in that The application further comprises a third color resist part (53); the third color resist part (53) is arranged in the first via hole (301a) and is different in color from the first filter part (41a); the third color resist part (53) and the first color resist part (51) are arranged in the second via hole (301b), and the first color resist part (51) is arranged between the third color resist part (53) and the second filter part (42a). The third via hole (301c) is provided with the third color resist part (53), the first color resist part (51) and the second color resist part (52), and the first color resist part (51) is located between the third color resist part (53) and the second color resist part (52).

7. The display panel (100) according to claim 6, characterized in that The third color resist part (53) has the same color as the second filter part (42a) or the third filter part (43a).

8. The display panel (100) according to claim 1, characterized in that Further comprising: A pixel electrode layer (80) located on the side of the filter layer (40) away from the substrate (10); A first conductive layer (71) located on the inner wall of the first connecting hole (301) and connected with one end of the active layer (20), and the first conductive layer (71) further comprises a connecting part (71a) extending to the surface of the insulating layer (30); A second connecting hole (81) penetrating through the filter layer (40), and the connecting part (71a) is connected with the pixel electrode layer (80) through the second connecting hole (81).

9. The display panel (100) according to claim 8, characterized in that Further comprising: A hydrogen barrier layer (93) located between the first conductive layer (71) and the filter layer (40) and extending into the first connecting hole (301); The second connecting hole (81) further penetrates through the hydrogen barrier layer (93).

10. A display device (200), characterized by The display panel (100) comprises any one of claims 1-9. The third via hole (301c) is provided with the third color resist part (53), the first color resist part (51) and the second color resist part (52), and the first color resist part (51) is located between the third color resist part (53) and the second color resist part (52). The third color resist part (53) has the same color as the second filter part (42a) or the third filter part (43a). Further comprising: A pixel electrode layer (80) located on the side of the filter layer (40) away from the substrate (10); A first conductive layer (71) located on the inner wall of the first connecting hole (301) and connected with one end of the active layer (20), and the first conductive layer (71) further comprises a connecting part (71a) extending to the surface of the insulating layer (30); A second connecting hole (81) penetrating through the filter layer (40), and the connecting part (71a) is connected with the pixel electrode layer (80) through the second connecting hole (81). Further comprising: A hydrogen barrier layer (93) located between the first conductive layer (71) and the filter layer (40) and extending into the first connecting hole (301); The second connecting hole (81) further penetrates through the hydrogen barrier layer (93). The display panel (100) comprises any one of claims 1-9.