A metal chamfering wheel for semiconductor silicon carbide wafers and its processing technology

Abstract

This application relates to the technical field of semiconductor processing equipment components, specifically disclosing a special metal chamfering wheel for semiconductor silicon carbide wafers and its processing technology. The special metal chamfering wheel for semiconductor silicon carbide wafers is mainly made of the following raw materials in weight percentages: 7-8% micron-sized diamond, 23-27% copper-tin powder, 60-65% cobalt powder, 2-3% silver powder, and 2-3% silicon nitride powder. This special metal chamfering wheel, through the interaction of the raw materials, has advantages such as high hardness, good thermal conductivity, excellent wear resistance, and high stability during the grinding process, outperforming traditional chamfering wheels and making it suitable for processing silicon carbide wafers.

Description

Technical Field

[0001] This application relates to the field of semiconductor processing equipment components technology, and more specifically, it relates to a special metal chamfering wheel for semiconductor silicon carbide wafers and its processing technology. Background Technology

[0002] Silicon carbide (SiC) wafers, as representatives of third-generation semiconductors, possess properties such as wide bandgap, high thermal conductivity, and high critical breakdown electric field, making them one of the ideal substrate materials for manufacturing high-temperature, high-frequency, and high-power power electronic devices. They also have broad application prospects in new energy vehicles, photovoltaic power generation, and smart grids. Edge chamfering is a critical process in SiC wafer manufacturing. The edges of SiC wafers are prone to stress concentration during handling and subsequent processes. Without chamfering, this can easily lead to edge chipping, microcracks, and even fragmentation, affecting the yield of the SiC wafers. Edge chamfering relies heavily on chamfering wheels, whose performance directly affects the processing accuracy, surface quality, and production efficiency of the SiC wafers. Traditional chamfering wheels have relatively poor wear resistance and thermal conductivity. After long-term friction with the SiC wafer, the surface of the chamfering wheel is prone to wear and indentation, easily causing quality defects such as SiC wafer chipping. Simultaneously, the grinding heat generated during processing cannot be dissipated in time, leading to heat accumulation and thermal deformation of the SiC wafer, further reducing the yield. Summary of the Invention

[0003] To improve the wear resistance and thermal conductivity of the chamfering wheel, this application provides a special metal chamfering wheel for semiconductor silicon carbide wafers and its processing technology.

[0004] In a first aspect, this application provides a special metal chamfering wheel for semiconductor silicon carbide wafers, employing the following technical solution: A special metal chamfering wheel for semiconductor silicon carbide wafers is mainly made of the following raw materials in weight percentages: 7-8% micron-sized diamond, 23-27% copper-tin powder, 60-65% cobalt powder, 2-3% silver powder, and 2-3% silicon nitride powder.

[0005] The metal chamfering wheel for semiconductor silicon carbide wafers disclosed in this application achieves a hardness of HRC > 60, a thermal conductivity of > 85 W / (m·K), a wear amount of < 0.03 mm after the end of its service life, and a maximum chipping size of < 10 μm through the interaction of raw materials. It has the advantages of high hardness, good thermal conductivity, excellent wear resistance, and high stability in the grinding process, which are significantly better than the performance of traditional chamfering wheels and are suitable for silicon carbide wafer processing scenarios.

[0006] The raw materials for specialized metal chamfering wheels utilize copper-tin powder as a binder phase to enhance bonding strength and ensure density; micron-sized diamond as a wear-resistant phase to improve hardness, wear resistance, and friction resistance; cobalt powder to construct a high-strength skeleton, strengthening the bond between the micron-sized diamond and the binder, and improving impact resistance and thermal conductivity; and silver powder to optimize lubrication, further enhancing wear resistance and thermal conductivity. Furthermore, silicon nitride powder is added, dispersed within the matrix, serving as a dispersion reinforcement, load support, and grain refinement agent. It also creates a self-lubricating effect, increasing hardness and reducing wear. Simultaneously, it strengthens interfacial bonding, eliminates interfacial gaps, acts as a thermal bridge, provides a rapid heat transfer channel, enhances the thermal network, increases thermal conductivity, and improves microstructure stability. This results in a smoother grinding process, reduces the maximum chipping size, and gives the specialized metal chamfering wheel superior overall performance.

[0007] Optionally, the micron-sized diamond has a mesh size of 1000-2000 mesh; and / or, the copper-tin powder has a mesh size of 300-500 mesh; and / or, the cobalt powder has a mesh size of 600-1000 mesh; and / or, the silver powder has a mesh size of 1500-2500 mesh; and / or, the silicon nitride powder has a mesh size of 300-500 mesh.

[0008] By adopting the above technical solution, the particle size of micron-sized diamond, copper-tin powder, cobalt powder, silver powder, and silicon nitride powder is optimized to form a particle size distribution, ensuring the density, strength, and toughness of the special metal chamfering wheel, which is beneficial to the processing of silicon carbide wafers.

[0009] In several embodiments, the mesh size of the micron-sized diamond is 1500 mesh, but it can also be set to 1000 mesh, 2000 mesh, etc., as needed, but is not limited to the listed values; other unlisted values ​​within this range are also applicable. In several embodiments, the mesh size of the copper-tin powder is 400 mesh, but it can also be set to 300 mesh, 500 mesh, etc., as needed, but is not limited to the listed values; other unlisted values ​​within this range are also applicable. In several embodiments, the mesh size of the cobalt powder is 800 mesh, but it can also be set to 600 mesh, 700 mesh, 900 mesh, 1000 mesh, etc., as needed, but is not limited to the listed values; other unlisted values ​​within this range are also applicable.

[0010] In several embodiments, the silver powder has a mesh size of 2000 mesh. However, the mesh size can also be set to 1500 mesh, 2500 mesh, etc., as needed, but is not limited to the listed values; other unlisted values ​​within this range also apply. In several embodiments, the silicon nitride powder has a mesh size of 400 mesh. However, the mesh size can also be set to 300 mesh, 500 mesh, etc., as needed, but is not limited to the listed values; other unlisted values ​​within this range also apply.

[0011] Optionally, the tin content in the copper-tin powder is 20-40 wt%.

[0012] By adopting the above technical solution, the tin content in the copper-tin powder is optimized to ensure the stability of the tin content in the special metal beveling wheel, thus guaranteeing that the special metal beveling wheel has good strength and toughness. In several embodiments, the tin content in the copper-tin powder is 33wt%, but it can also be set to 20wt%, 25wt%, 30wt%, 35wt%, 40wt%, etc., as needed, but it is not limited to the listed values; other unlisted values ​​within this range are also applicable.

[0013] Optionally, the silicon nitride powder undergoes the following pretreatment before use: T1. Mix water, ferric nitrate nonahydrate and dispersant, adjust the pH to 1-3, add silicon nitride powder, sonicate for 20-40 min, let stand for 3-5 h, filter, wash and dry to obtain ferric nitrate supported silicon nitride powder. T2. In an air atmosphere at a temperature of 370-390℃, silicon nitride powder supported by ferric nitrate is kept at this temperature for 1-3 hours and then cooled to room temperature to obtain silicon nitride powder supported by ferric oxide. T3. In a reducing atmosphere at a temperature of 550-570℃, silicon nitride powder is loaded onto iron oxide and kept at that temperature for 2-4 hours. Then, it is cooled to room temperature to obtain pretreated silicon nitride powder.

[0014] By employing the above technical solution, silicon nitride powder is pretreated to load elemental iron, resulting in pretreated silicon nitride powder. The loaded elemental iron enhances interfacial strength, reduces interfacial defects, increases toughness, and improves hardness and wear resistance. Furthermore, it eliminates interfacial gaps, forming a continuous thermally conductive network and improving thermal conductivity. Simultaneously, it improves the uniformity of silicon nitride powder dispersion, ensuring grinding continuity and sharpness, increasing the stability of the grinding process, and enabling the specialized metal chamfering wheel to exhibit superior overall performance.

[0015] Optionally, the weight ratio of silicon nitride powder to ferric nitrate nonahydrate is 10:(1-2).

[0016] Optionally, the weight ratio of the silicon nitride powder, water, and dispersant is 10:(20-40):(0.3-0.8).

[0017] By adopting the above technical solution, the weight ratio of silicon nitride powder and ferric nitrate nonahydrate is optimized, as are the weight ratios of silicon nitride powder, water, and dispersant. This ensures that the raw materials are in full contact and that ferric nitrate is loaded onto the silicon nitride powder, thereby guaranteeing the loading and uniformity of elemental iron on the silicon nitride powder and ensuring the effectiveness of the pretreated silicon nitride powder.

[0018] In several implementations, the weight ratio of silicon nitride powder to ferric nitrate nonahydrate is 10:1.5. The weight ratio can also be set to 10:1, 10:2, etc., as needed, but it is not limited to the listed values. Other unlisted values ​​within this range are also applicable.

[0019] In several implementations, the weight ratio of silicon nitride powder, water, and dispersant is 10:30:0.5. It can also be set to 10:20:0.3, 10:20:0.8, 10:40:0.3, 10:40:0.8, etc., as needed, but it is not limited to the listed values. Other unlisted values ​​within this range are also applicable.

[0020] Optionally, the dispersant is selected from one or more combinations of polyethylene glycol 400, polyethylene glycol 600, polyvinylpyrrolidone, and sodium carboxymethyl cellulose.

[0021] Secondly, this application provides a processing technology for the special metal chamfering wheel for semiconductor silicon carbide wafers, which adopts the following technical solution: A processing method for a special metal chamfering wheel for semiconductor silicon carbide wafers includes the following steps: S1. Mix micron-sized diamond, copper-tin powder, cobalt powder, silver powder, and silicon nitride powder evenly to obtain a mixture; S2. The mixture is wet ball-milled and vacuum-dried to obtain a mixed powder. S3. Place the mixed powder in a mold and cold press it to form a green blank with beveled edges; S4. Vacuum hot pressing and sintering of the chamfering wheel blank, cooling to room temperature, demolding, and trimming to obtain a special metal chamfering wheel.

[0022] By adopting the above technical solution, it is convenient to process special metal chamfering wheels.

[0023] Optionally, in step S2, the wet ball milling speed is 300-400 r / min and the time is 2-4 h.

[0024] Optionally, in step S2, the ball milling medium for wet ball milling is anhydrous ethanol.

[0025] Optionally, in step S2, the weight ratio of the ball milling media to the mixture in the wet ball milling is 1:(0.5-1.5).

[0026] In several embodiments, the wet ball milling speed is 350 r / min and the time is 3 h. However, the speed can be set to 300 r / min, 400 r / min, etc., and the time can be set to 2 h, 4 h, etc., as needed. These are not limited to the listed values; other unlisted values ​​within this range are also applicable. In several embodiments, the weight ratio of the milling media to the mixture is 1:1. This can also be set to 1:0.5, 1:1.5, etc., as needed. These are not limited to the listed values; other unlisted values ​​within this range are also applicable.

[0027] Optionally, in step S3, the cold pressing pressure is 300-400KN and the time is 5-8min.

[0028] By adopting the above technical solution, the pressure and time of cold pressing are optimized, which facilitates the cold pressing of mixed powder, ensures the formation of green blanks with beveling wheel, and has good density and strength, which facilitates subsequent processing.

[0029] In several implementations, the cold pressing pressure is 350 kN and the time is 5 min. The pressure can also be set to 300 kN, 400 kN, etc., and the time can be set to 5 min, 8 min, etc., as needed. However, it is not limited to the listed values. Other unlisted values ​​within this range are also applicable.

[0030] Optionally, in step S4, the temperature of vacuum hot pressing sintering is 550-600℃, the sintering time is 10-20min, the sintering pressure is 45-55MPa, and the vacuum degree is -0.1MPa.

[0031] Optionally, in step S4, a vacuum hot pressing sintering machine is used to sinter the green blank. The vacuum hot pressing sintering machine is divided into numbered segments 00-07 throughout the entire heating and sintering process, and the parameters of each numbered segment are as follows: Section 00, with a pressure of 8-13 MPa and a temperature of 240-260℃, is used for preliminary vacuuming; Section 01, time 0.5-1.5min, pressure 18-23MPa, temperature 410-430℃, and vacuuming is performed again; In stage 02, the time is 0.5-1.5 min, the pressure is 18-23 MPa, and the temperature is 450-470℃. Then, a vacuum is drawn again to achieve a vacuum level of -0.1 MPa. Section 03, time 0.5-1.5 min, pressure 18-23 MPa, temperature 470-490℃, vacuum degree -0.1 MPa; Section 04, time 1.5-2.5 min, pressure 18-23 MPa, temperature 510-530℃, vacuum degree -0.1 MPa; Section 05, time 0.5-1.5 min, pressure 18-23 MPa, temperature 540-560℃, vacuum degree -0.1 MPa; Section 06, time is 1.5-2.5 min, pressure is 23-28 MPa, temperature is 570-590℃, vacuum degree is -0.1 MPa; Section 07, time 5-20 min, pressure 48-53 MPa, temperature 570-590℃, vacuum degree -0.1 MPa.

[0032] By adopting the above technical solution, stage 00 removes residual moisture and impurities; stage 01 softens the binder phase; stage 02 promotes uniform coating of hard particles by the binder phase; stage 03 eliminates internal pores; stage 04 improves the fluidity of the binder phase; stage 05 promotes diffusion and bonding between particles; stage 06 further improves density; and stage 07 ensures that the raw materials are fully bonded to form a stable microstructure.

[0033] In this application, by gradient heating, gradient pressurization, and gradient vacuum reduction, densification and interfacial reactions are promoted, so that the density reaches more than 99.5%, reducing defects such as pores and cracks, improving the overall performance of the special metal chamfering wheel, and maintaining structural stability under the high temperature and high pressure silicon carbide wafer processing environment, ensuring the processing accuracy of silicon carbide wafers, and eliminating the risk of deformation and cracking.

[0034] Optionally, in step S4, during the finishing process, the surface roughness Ra of the working surface is finished to ≤ 0.8 μm.

[0035] By adopting the above technical solutions, the surface roughness of the working surface is optimized, the friction coefficient is reduced, which helps to reduce the maximum chipping size and improve the stability of the grinding process of the special metal chamfering wheel.

[0036] In summary, this application has at least the following beneficial effects: 1. The special metal chamfering wheel of this application has the advantages of high hardness, good thermal conductivity, excellent wear resistance, and high stability in the grinding process. Its hardness HRC>60, thermal conductivity>85W / (m·K), wear amount after the metal chamfering wheel reaches the end of its service life<0.03mm, and maximum chipping size<10μm are significantly better than the performance of traditional chamfering wheels, and it is suitable for processing silicon carbide wafers.

[0037] 2. The specialized metal chamfering wheel of this application uses copper-tin powder as the binder phase, micron-sized diamond as the wear-resistant phase, cobalt powder to construct a high-strength skeleton, and silver powder to optimize lubrication. The addition of micron-sized diamond significantly improves hardness and wear resistance, enabling it to withstand the friction and impact of silicon carbide wafers for extended periods, reducing wear rate and extending service life. The addition of copper-tin powder, cobalt powder, and silver powder enhances thermal conductivity, allowing for timely dissipation of grinding heat generated during silicon carbide wafer processing, preventing thermal deformation of the silicon carbide wafer and thermal fatigue damage to the chamfering wheel. Furthermore, the addition of silicon nitride powder provides dispersion strengthening, load support, grain refinement, and self-lubrication effects. It also eliminates interfacial gaps, enhances the thermal conductivity network, improves the microstructure, and increases microstructure stability, resulting in superior overall performance for the specialized metal chamfering wheel. Detailed Implementation

[0038] To make this application easier to understand, the following detailed description will be provided with reference to embodiments. These embodiments are for illustrative purposes only and are not intended to limit the scope of application of this application. Unless otherwise specified, the raw materials or components used in this application can be obtained commercially or by conventional methods.

[0039] Example Table 1. Raw material percentage of special metal chamfering wheels (unit: %) Note: The total amount of raw material for the special metal chamfering wheel is 1000g.

[0040] Table 2. Vacuum hot pressing sintering segmented process parameters Example 1 A special metal chamfering wheel for semiconductor silicon carbide wafers, the raw materials and their proportions are shown in Table 1.

[0041] Among them, the micron-sized diamond has a mesh size of 1500; the copper-tin powder has a mesh size of 400 and the tin content in the copper-tin powder is 33wt%; the cobalt powder has a mesh size of 800; the silver powder has a mesh size of 2000 and the silicon nitride powder has a mesh size of 400.

[0042] A processing technology for a metal chamfering wheel specifically for semiconductor silicon carbide wafers includes the following steps: S1. Mix micron-sized diamond, copper-tin powder, cobalt powder, silver powder, and silicon nitride powder evenly to obtain a mixture.

[0043] S2. In a ball mill, anhydrous ethanol is used as the milling medium. The mixture and anhydrous ethanol are mixed evenly. Then, the mixture is wet-milled at 350 r / min for 3 hours. Afterward, it is vacuum-dried in a vacuum drying oven at 80℃ for 6 hours to obtain the mixed powder.

[0044] The weight ratio of the ball milling media to the mixture is 1:1.

[0045] S3. Place the mixed powder into a graphite mold. Then, use a cold press to press it for 5 minutes at a pressure of 350KN to complete the cold pressing and obtain the beveled wheel green blank.

[0046] S4. Using a vacuum hot pressing sintering machine, the green blank of the chamfering wheel is vacuum hot pressed and sintered according to the segmented process parameters in Table 2. After cooling to 25°C in the furnace, it is demolded. Then, it is corrected and trimmed until the surface roughness Ra of the working surface is 0.8μm to obtain a special metal chamfering wheel.

[0047] Example 2 A special metal chamfering wheel for semiconductor silicon carbide wafers is different from that in Example 1 in that the raw material ratio of the special metal chamfering wheel is different, and the raw material ratio of the special metal chamfering wheel is shown in Table 1.

[0048] Example 3 A special metal chamfering wheel for semiconductor silicon carbide wafers is different from that in Example 1 in that the raw material ratio of the special metal chamfering wheel is different, and the raw material ratio of the special metal chamfering wheel is shown in Table 1.

[0049] Example 4 A special metal chamfering wheel for semiconductor silicon carbide wafers differs from that in Example 1 in that step S4 in the processing technology of the special metal chamfering wheel is different.

[0050] Step S4 specifically involves: using a vacuum hot pressing sintering machine, at a temperature of 580℃, a pressure of 25MPa, and a vacuum degree of -0.1MPa, holding the green blank of the chamfering wheel for 1.83 minutes. The pressure is then increased to 50MPa, and the holding time is 10 minutes to complete the vacuum hot pressing sintering. The blank is then cooled to 25℃ in the furnace and demolded. Afterwards, it is corrected and trimmed until the surface roughness Ra of the working surface is 0.8μm, thus obtaining a special metal chamfering wheel.

[0051] Example 5 A special metal chamfering wheel for semiconductor silicon carbide wafers differs from Example 1 in that the silicon nitride powder in the raw material of the special metal chamfering wheel is pretreated before use.

[0052] Silicon nitride powder undergoes the following pretreatment before use: T1. At a rotation speed of 350 r / min, add 15 g of ferric nitrate nonahydrate and 5 g of dispersant to 300 g of water, and stir for 3 min. Then adjust the pH to 2, add 100 g of silicon nitride powder, sonicate for 30 min, and let stand for 4 h. After that, filter and wash twice with water, using 100 g of water each time. Then dry at 90℃ to obtain ferric nitrate-supported silicon nitride powder.

[0053] The dispersant is selected from polyethylene glycol 400.

[0054] T2. In an air atmosphere at a temperature of 380°C, silicon nitride powder loaded with ferric nitrate is heat-treated for 2 hours and then cooled to 25°C in the furnace to obtain silicon nitride powder loaded with ferric oxide.

[0055] T3. In a hydrogen atmosphere at a temperature of 560°C, silicon nitride powder is loaded onto iron oxide and kept at that temperature for 3 hours. Then, it is cooled to 25°C in the furnace to obtain pretreated silicon nitride powder.

[0056] Comparative Example Comparative Example 1 A special metal chamfering wheel for semiconductor silicon carbide wafers differs from Example 1 in that an equal amount of cobalt powder is used to replace silicon nitride powder in the raw materials of the special metal chamfering wheel, and the raw material ratio of the special metal chamfering wheel is shown in Table 1.

[0057] Comparative Example 2 A special metal chamfering wheel for semiconductor silicon carbide wafers differs from that in Example 1 in that the amount of copper-tin powder, cobalt powder, and silicon nitride powder added to the raw materials of the special metal chamfering wheel is different, and the raw material ratio of the special metal chamfering wheel is shown in Table 1.

[0058] Comparative Example 3 A special metal beveling wheel for semiconductor silicon carbide wafers differs from Example 1 in that the amounts of copper-tin powder and cobalt powder added to the raw materials of the special metal beveling wheel are different, and the raw material ratio of the special metal beveling wheel is shown in Table 1. Performance Testing The special metal chamfering wheels obtained in Examples 1-5 and Comparative Examples 1-3 were taken as samples, and the following performance tests were performed on the special metal chamfering wheels. The test results are shown in Table 3.

[0059] The hardness of the special metal chamfering wheel was tested in accordance with GB / T230.1-2018 "Metallic materials Rockwell hardness test - Part 1: Test method".

[0060] The thermal conductivity of the special metal chamfering wheel was tested according to ASTM E1461-2013, "Standard Test Method for Determination of Thermal Diffusivity by Flash Method".

[0061] When this metal sintered grinding wheel is used in the beveling process of semiconductor silicon carbide wafers, the product yield will deteriorate as the surface layer of diamond wears off and exposes the next layer of diamond. Therefore, it is stopped after the surface layer of diamond is worn off, and the wear of the metal beveling wheel that has been taken out of service is tested.

[0062] The maximum chipping size was determined using the following method: A dedicated metal chamfering wheel was used to chamfer the silicon carbide wafer, resulting in a chamfered silicon carbide wafer. Then, according to T / IAWBS 021-2024 "Method for Inspecting the Edge Contour of Silicon Carbide Wafers," the edge of the chamfered silicon carbide wafer was inspected, and the maximum chipping size was measured. A smaller maximum chipping size indicates a smoother grinding process using the dedicated metal chamfering wheel, meaning better grinding process stability.

[0063] Table 3 Test Results As shown in Table 3, the special metal chamfering wheel of this application possesses high hardness and thermal conductivity, with a hardness of HRC 61-66 and a thermal conductivity of 85.2-91.4 W / (m·K), exhibiting characteristics of high hardness and good thermal conductivity. Furthermore, it also exhibits low wear and a low maximum chipping size; after the metal chamfering wheel reaches the end of its service life, the wear is <0.03 mm and the maximum chipping size is <10 μm, demonstrating excellent wear resistance and high stability during the grinding process. In other words, the special metal chamfering wheel of this application, through the interaction of the raw materials, possesses the advantages of high hardness, good thermal conductivity, excellent wear resistance, and high stability during the grinding process, exhibiting good comprehensive performance and being suitable for processing silicon carbide wafers.

[0064] Comparative Example 1 and Example 1 were compared. In Example 1, silicon nitride powder was added to the raw material of the special metal chamfering wheel, compared to Comparative Example 1. It can be seen that adding silicon nitride powder to the raw material effectively improves hardness, thermal conductivity, wear resistance, and grinding process stability. This is likely because silicon nitride powder, dispersed in the matrix, acts as a dispersion reinforcement, inhibits grain growth during sintering, refines grain size, and also forms a self-lubricating effect, increasing hardness and reducing wear. Simultaneously, it eliminates interfacial gaps, acts as a thermal bridge, provides a rapid channel for heat transfer, enhances the thermal network, increases thermal conductivity, improves microstructure, increases microstructure stability, makes the grinding process smoother, and reduces the maximum chipping size.

[0065] Comparative Examples 2-3 and Example 1 were compared. The raw materials for the special metal chamfering wheel in Comparative Example 2 contained 65% copper-tin powder, 25% cobalt powder, and no silicon nitride powder. The raw materials for the special metal chamfering wheel in Comparative Example 3 contained 63% copper-tin powder, 25% cobalt powder, and 2% silicon nitride powder. The raw materials for the special metal chamfering wheel in Example 1 contained 25% copper-tin powder, 63% cobalt powder, and 2% silicon nitride powder. It can be seen that significantly increasing the amount of copper-tin powder and decreasing the amount of cobalt powder in the raw materials causes the special metal chamfering wheel to lose its high-strength skeleton, thus reducing its performance. Furthermore, by setting the raw materials and their proportions within the scope of this application, and utilizing their synergistic effects, the special metal chamfering wheel can exhibit superior overall performance.

[0066] Example 1 and Example 5 were compared. In Example 1, silicon nitride powder was added to the raw material of the special metal chamfering wheel; in Example 5, pretreated silicon nitride powder was added to the raw material of the special metal chamfering wheel. It can be seen that pretreating the silicon nitride powder and loading elemental iron onto it can enhance interfacial bonding, improve interfacial strength, reduce interfacial defects, enhance toughness, and increase hardness and wear resistance. Furthermore, it can further eliminate interfacial gaps, which is beneficial for heat transfer and improves thermal conductivity. Simultaneously, it can improve the uniformity of silicon nitride powder dispersion, ensure the continuity and sharpness of grinding, make the grinding process smoother, and reduce the maximum chipping size.

[0067] It should be noted that the embodiments described above are only for explaining this application and do not constitute any limitation on this application. This application has been described with reference to typical embodiments, but it should be understood that the terms used therein are descriptive and explanatory terms, not limiting terms. Modifications can be made to this application within the scope of the claims, and amendments can be made without departing from the scope and spirit of this application. Although the application described herein relates to specific methods, materials, and embodiments, it does not mean that this application is limited to the specific examples disclosed herein; on the contrary, this application can be extended to all other methods and applications with the same function.

Claims

1. A metal deburring wheel for semiconductor silicon carbide wafers, characterized by: It is mainly made of raw materials with the following weight percentages: micron diamond 7-8%, copper-tin powder 23-27%, cobalt powder 60-65%, silver powder 2-3%, and silicon nitride powder 2-3%.

2. The metal deburring wheel for semi-conductor silicon carbide wafer as claimed in claim 1, wherein: The micron diamond has a mesh number of 1000-2000 mesh; And / or, the copper-tin powder has a mesh number of 300-500 mesh; And / or, the cobalt powder has a mesh number of 600-1000 mesh; And / or, the silver powder has a mesh number of 1500-2500 mesh; And / or, the silicon nitride powder has a mesh number of 300-500 mesh.

3. The metal deburring wheel for semiconductor silicon carbide wafer as claimed in claim 1, wherein: The mass content of tin in the copper-tin powder is 20-40wt%.

4. The metal deburring wheel for semiconductor silicon carbide wafer as claimed in claim 1, wherein: The silicon nitride powder is pretreated before use as follows: T1, mix water, iron nitrate nonahydrate, and a dispersant, adjust the pH value to 1-3, add the silicon nitride powder, ultrasonic treatment for 20-40 min, stand for 3-5 h, filter, wash, and dry to obtain iron nitrate-loaded silicon nitride powder; T2, under an air atmosphere and at a temperature of 370-390℃, the iron nitrate-loaded silicon nitride powder is heat-treated for 1-3 h, and cooled to room temperature to obtain iron oxide-loaded silicon nitride powder; T3, under a reducing atmosphere and at a temperature of 550-570℃, the iron oxide-loaded silicon nitride powder is heat-treated for 2-4 h, and cooled to room temperature to obtain pretreated silicon nitride powder.

5. The metal deburring wheel for semi-conductor silicon carbide wafer as claimed in claim 4, wherein: The weight ratio of the silicon nitride powder to iron nitrate nonahydrate is 10:(1-2).

6. The metal deburring wheel for semiconductor silicon carbide wafer as claimed in claim 4, wherein: The weight ratio of the silicon nitride powder to water to dispersant is 10:(20-40):(0.3-0.8).

7. The process for machining a metal beveler for semiconductor silicon carbide wafers as claimed in any one of claims 1 to 6, characterized in that: The method comprises the following steps: S1, mix micron diamond, copper-tin powder, cobalt powder, silver powder, and silicon nitride powder uniformly to obtain a mixture; S2, wet ball mill the mixture and vacuum dry to obtain a mixed powder; S3, place the mixed powder in a mold, cold press to form, and obtain a beveled wheel green body; S4, vacuum hot press sinter the beveled wheel green body, cool to room temperature, demold, and trim to obtain a special metal beveled wheel.

8. The processing technology of the metal beveler special for semiconductor silicon carbide wafer as claimed in claim 7, characterized in that: In step S3, the pressure for cold press forming is 300-400KN, and the time is 5-8 min.

9. The processing technology of the metal beveler special for semiconductor silicon carbide wafer as claimed in claim 7, characterized in that: In step S4, the temperature for vacuum hot press sintering is 550-600℃, the sintering time is 10-20 min, the sintering pressure is 45-55MPa, and the vacuum degree is -0.1MPa.

10. The processing technology of the metal beveler special for semiconductor silicon carbide wafer as claimed in claim 7, wherein: In step S4, in the trimming process, the surface roughness Ra of the working surface is ≤0.8μm.

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