Multifunctional soft x-ray detector and method of making same

Abstract

The present application relates to a multi-functional soft X-ray detector and a preparation method thereof, comprising: a photoelectric detection chip, an insulating barrier layer and a co-integrated functional material layer; wherein the co-integrated functional material layer is a thin film, and simultaneously has light filtering, protection and online self-cleaning functions; an electrode lead-out end for applying a driving current is arranged on the co-integrated functional material layer. The present application has the beneficial effect that: the present application replaces the dispersed structure of independent optical filter + external protection through co-integration design, the mechanical strength of the device is improved by 3-5 times, and the device can withstand harsh environments of vacuum pressure difference ±1 atm and vibration frequency 50-2000 Hz without the risk of cracking and warping.

Description

Technical Field

[0001] This invention belongs to the field of photoelectric detection technology, and particularly relates to a multifunctional soft X-ray detector and its preparation method. Background Technology

[0002] Soft X-ray detectors are core sensing components in soft X-ray related technologies (such as photolithography, light sources, and diagnostics), and their performance directly determines the monitoring accuracy and operational stability of the system. In existing technologies, mainstream soft X-ray detectors use silicon photodiodes as the core, supplemented by independent filters, external protection, and other additional structures. However, they face the following unavoidable technical bottlenecks in practical applications: 1. The contradiction between stray light suppression and structural reliability: Existing technologies rely on independent transmission filters (such as Al / Al2O3 multilayer films) to suppress visible / infrared stray light. However, these filters are self-supporting ultrathin film structures (thickness is usually <100nm), which are prone to cracking and warping under vacuum pressure difference, vibration or plasma impact. Furthermore, the assembly gap with the detector chip can easily introduce secondary reflection noise, resulting in a decrease in signal purity. 2. Chips are easily damaged in plasma environments: Detectors often operate in harsh environments such as laser plasma (LPP) and discharge plasma (DPP). High-energy ions, electrons and neutral particles directly bombard the photosensitive layer, causing silicon lattice defects and an increase in surface state density, which manifests as an increase in dark current (usually >1 nA) and irreversible decay of responsivity. 3. Carbon contamination accumulation leads to sensitivity degradation: Soft X-ray radiation can induce residual organic molecules (such as photoresist volatiles and vacuum pump oil vapor) in the vacuum environment to aggregate on the detector surface to form a carbon contamination layer. This layer has a high absorption rate in the soft X-ray band (0–15nm), which leads to a continuous decrease in detection sensitivity. Existing cleaning methods require offline disassembly (such as plasma cleaning and chemical wiping), which not only interrupts system operation but may also cause secondary damage to the chip due to disassembly and assembly. In summary, existing soft X-ray detectors suffer from core problems such as "dispersed functions, fragile structure, easy contamination, and difficult maintenance." Single additional structural improvements can no longer meet the application requirements of high power, long cycle, and low maintenance. There is an urgent need for a new detector design that integrates functions, stabilizes the structure, and allows for in-situ maintenance. Summary of the Invention

[0003] The purpose of this invention is to overcome the shortcomings of the prior art and provide a multifunctional soft X-ray detector and its preparation method.

[0004] Firstly, a multifunctional soft X-ray detector is provided, which, from bottom to top, includes: a photoelectric detection chip, an insulating barrier layer, and a co-integrated functional material layer; The co-integrated functional material layer is a thin film that simultaneously possesses light filtering, protection, and online self-cleaning functions; the co-integrated functional material layer is provided with electrode leads for applying driving current.

[0005] Preferably, the co-integrated functional material layer has a periodic micro-nano topology, which is selected from a one-dimensional striped grating, a two-dimensional circular aperture array, or a quasi-periodic structure; the period of the periodic micro-nano topology is 50–500 nm, and the feature size is 20–250 nm.

[0006] Preferably, the material of the co-integrated functional material layer is selected from zirconium, niobium, yttrium, zirconium-niobium alloy, or titanium nitride; its thickness is 10–100 nm; and its bulk resistivity is 10⁻⁶. -7 -10 -6 Ω·m.

[0007] Preferably, the electrode material of the electrode lead-out end is selected from gold, silver or copper, and the electrode spacing is 0.5–5 mm; the surface temperature of the co-integrated functional material layer can be adjusted to 150–400 ℃ when energized.

[0008] Preferably, the insulating barrier layer is selected from alumina, silicon oxide, silicon nitride, hafnium oxide or composite materials thereof; its thickness is 5–50 nm and its breakdown voltage is ≥100 V.

[0009] Preferably, the photodetector chip is selected from silicon photodiodes, gallium nitride photodiodes, or silicon carbide photodiodes; its photosensitive area is 0.1–10 mm², and its room temperature dark current is ≤0.5 nA.

[0010] Preferably, the co-integrated functional material layer has a physical barrier effect against ion bombardment with energies ≥50 eV.

[0011] In a second aspect, a method for fabricating a multifunctional soft X-ray detector as described in any of the first aspects is provided, comprising: S1. Provide photoelectric detection chips and perform preprocessing; S2. Deposit an insulating barrier layer on the surface of the photosensitive area of ​​the photodetector chip; S3. Deposit a functional material layer on the surface of the insulating barrier layer; S4. Spin-coat photoresist onto the surface of the functional material layer and pattern it; S5. Using patterned photoresist as a mask, the functional material layer is etched to form a patterned co-integrated functional material layer; S6. Remove the photoresist and fabricate electrode leads on the co-integrated functional material layer; S7. Perform surface stabilization treatment on the device.

[0012] Preferably, in S1, the pretreatment includes: ultrasonic cleaning with acetone and / or isopropanol for 10–20 min to remove surface organic contaminants, followed by treatment with a plasma cleaner for 3–8 min to remove the surface oxide layer and residual particles.

[0013] Preferably, in S7, the surface stabilization treatment includes: placing the device in an oxygen plasma or hydrogen plasma environment for 2–5 min at a power of 30–80 W.

[0014] The beneficial effects of this invention are: 1. Highly integrated functions and significantly improved structural stability: This invention replaces the discrete structure of independent filters + external protection with a co-integrated design, which increases the mechanical strength of the device by 3-5 times. It can withstand harsh environments with vacuum pressure difference of ±1 atm and vibration frequency of 50-2000 Hz without the risk of cracking or warping. 2. Balancing stray light suppression and detection sensitivity: The photonic bandgap effect of the micro-nano structure of this invention enables a visible / infrared light suppression rate of ≥90% and a soft X-ray transmittance of ≥70%, ensuring detection accuracy; 3. Online self-cleaning, significantly reducing maintenance costs: This invention can remove carbon contamination by heating without disassembly, with a single cleaning time of ≤60 s, extending the lifespan of the detector and avoiding production losses caused by system downtime for maintenance; 4. Excellent chip protection effect: The functional material layer of this invention can effectively block high-energy particle bombardment, reduce the dark current growth rate of the photosensitive layer, reduce the responsivity decay rate, and significantly improve performance stability. Attached Figure Description

[0015] Figure 1 A schematic diagram of the soft X-ray detector structure with integrated filtering, protection and online self-cleaning functions provided by the present invention; Figure 2 A process flow diagram for the fabrication of the multifunctional soft X-ray detector provided by the present invention; Figure labeling: 1. Electrode lead-out terminal; 2. Co-integrated functional material layer; 3. Insulating barrier layer; 4. Photodetector chip. Detailed Implementation

[0016] The present invention will be further described below with reference to embodiments. The description of the embodiments below is only for the purpose of helping to understand the present invention. It should be noted that those skilled in the art can make several modifications to the present invention without departing from the principle of the present invention, and these improvements and modifications also fall within the protection scope of the claims of the present invention.

[0017] Example 1: To address the challenges of stray light suppression versus structural reliability, chip susceptibility to plasma damage, difficulty in removing accumulated carbon contamination, and poor manufacturing consistency of micro / nano structures in existing technologies, Embodiment 1 of this application provides a soft X-ray detector integrating filtering, protection, and online self-cleaning functions. Specifically, it achieves the following objectives: integrating filtering, protection, and self-cleaning functions to eliminate the structural fragility of independent filters and improve device mechanical stability; constructing a physical protective barrier to block high-energy particle bombardment and reduce the risk of damage to the photosensitive layer; providing in-situ online self-cleaning capability to remove surface carbon contamination without disassembly, maintaining long-term detection sensitivity; and optimizing the micro / nano structure manufacturing process to improve structural consistency and mass production feasibility.

[0018] Specifically, this soft X-ray detector utilizes the strong absorption characteristics of specific materials for long-wavelength radiation and the diffraction effect of micro-nano gratings to efficiently suppress background visible stray light along the physical path. At the same time, it acts as a dense physical sacrificial layer to block the direct erosion of the chip substrate by plasma and high-energy particles. In addition, the precision resistive heating structure prepared by the double-layer adhesive undercut process can perform online thermal cleaning by generating Joule heat through controlled current, and remove surface carbon contamination by thermal desorption and catalytic effects without disrupting the vacuum environment.

[0019] like Figure 1 As shown, the multifunctional soft X-ray detector comprises, from bottom to top: a photoelectric detection chip, an insulating barrier layer, and a co-integrated functional material layer; The co-integrated functional material layer is a thin film that simultaneously possesses light filtering, protection, and online self-cleaning functions; the co-integrated functional material layer is provided with electrode leads for applying driving current.

[0020] The co-integrated functional material layer has a periodic micro / nano topological structure, for example, employing a one-dimensional striped grating, a two-dimensional circular aperture array, or a quasi-periodic structure. The selection of its structural parameters comprehensively considers subwavelength optical modulation and high-energy X-ray transmission efficiency: the period is set at 50–500 nm, and the characteristic size is 20–250 nm. This size range utilizes the photonic bandgap effect to generate strong Bragg reflection (suppression rate >90%) in the visible and infrared bands; simultaneously, because its geometric size is much larger than the soft X-ray wavelength, it can significantly reduce the equivalent refractive index fluctuation in this frequency band. Combined with a surface roughness of 5 nm, it can effectively suppress interface scattering, ensuring a soft X-ray transmittance >70%.

[0021] The co-integrated functional material layer is selected from any one of zirconium (Zr), niobium (Nb), yttrium (Y), zirconium-niobium alloy, or titanium nitride (TiN), with a thickness of 10–100 nm, preferably 30–60 nm, and a bulk resistivity of 10 Ω·cm. -7 -10 -6 Ω・m ensures efficient heating when energized.

[0022] The electrode material at the electrode leads is selected from gold (Au), silver (Ag), or copper (Cu), with a thickness of 50–200 nm and an electrode spacing of 0.5–5 mm, used to apply a driving current to achieve heating self-cleaning. For example, the co-integrated functional material layer can achieve surface temperature control of 150–400 °C under energized conditions, with a heating rate ≥5 °C / s and a holding time of 10–60 s to completely remove the carbon contamination layer. In addition to resistance heating self-cleaning, a plasma-excited electrode can be added to the electrode design. By introducing argon gas (flow rate 5–10 sccm) and applying a radio frequency voltage (13.56 MHz, power 50–100 W), low-temperature plasma-assisted cleaning is generated, suitable for stubborn contamination layers, forming a synergy with heating cleaning.

[0023] In addition, the co-integrated functional material layer has a physical barrier effect against ion bombardment with energies ≥50 eV, and its sputtering etching rate is reduced by at least one order of magnitude compared to unprotected chips.

[0024] Example 2: Based on Embodiment 1, Embodiment 2 of this application provides a more specific multifunctional soft X-ray detector, which includes, from bottom to top: a photoelectric detection chip, an insulating barrier layer, and a co-integrated functional material layer; The co-integrated functional material layer is a thin film that simultaneously possesses light filtering, protection, and online self-cleaning functions; the co-integrated functional material layer is provided with electrode leads for applying driving current.

[0025] The insulating barrier layer is selected from any one of alumina (Al2O3), silicon oxide (SiO2), silicon nitride (Si3N4) or hafnium oxide (HfO2) or a composite material thereof, with a thickness of 5–50 nm, preferably 10–30 nm, and a breakdown voltage ≥100 V, and is used to achieve electrical isolation and surface protection between the functional material layer and the photosensitive layer.

[0026] The photodetector chip is selected from silicon photodiodes (Si PD), gallium nitride photodiodes (GaN PD) or silicon carbide photodiodes (SiC PD), with a photosensitive area of ​​0.1–10 mm² and a dark current ≤0.5 nA (room temperature, 0V bias).

[0027] It should be noted that the parts in this embodiment that are the same as or similar to those in Embodiment 1 can be referred to each other, and will not be repeated in this application.

[0028] Example 3: Based on Example 2, Example 3 of this application provides a method for fabricating a multifunctional soft X-ray detector, such as... Figure 2 As shown, it includes: S1. Provide photoelectric detection chips and perform preprocessing.

[0029] In S1, the pretreatment includes: ultrasonic cleaning with acetone and / or isopropanol for 10–20 min to remove surface organic contaminants, followed by treatment with a plasma cleaner for 3–8 min to remove the surface oxide layer and residual particles.

[0030] For example, a silicon photodiode (Si PD) chip with a photosensitive area of ​​10 mm² and a dark current of 0.3 nA at room temperature (0 V bias) was selected. The chip was then immersed in acetone solution for ultrasonic cleaning for 15 min (power 100 W, frequency 40 kHz), followed by isopropanol solution for ultrasonic cleaning for 15 min, deionized water for 2 min, and nitrogen gas for drying. Subsequently, the chip was placed in a plasma cleaner, purged with argon gas (flow rate 30 sccm), and treated for 5 min at 100 W to remove the surface oxide layer and residual organic contaminants.

[0031] In addition, GaN PD or SiC PD can be used instead of Si PD, as long as the dark current of the photosensitive area is ≤0.5nA and the soft X-ray responsivity is ≥0.1 A / W.

[0032] S2. An insulating barrier layer is deposited on the surface of the photosensitive area of ​​the photodetector chip.

[0033] Specifically, atomic layer deposition (ALD) or plasma-enhanced chemical vapor deposition (PECVD) methods are used to deposit an insulating barrier layer on the surface of the photosensitive area of ​​the chip. The deposition temperature is 80–200 ℃ and the deposition rate is 0.05–0.2 nm / s to ensure that the layer thickness uniformity is ≤±5%.

[0034] For example, an atomic layer deposition (ALD) apparatus was used to deposit an alumina (Al2O3) insulating barrier layer using trimethylaluminum (TMA) and deionized water as reaction precursors; the deposition temperature was 150 °C and the vacuum degree was 1 × 10⁻⁶. -3 Pa, TMA pulse time 0.1s, water pulse time 0.05s, purge time 5s, deposition rate 0.1 nm / s, total thickness 20 nm, layer thickness uniformity ±3%, breakdown voltage 120 V.

[0035] In addition, SiO2, Si3N4 or HfO2 can be used to replace Al2O3, and the thickness can be adjusted to 5–50 nm; PECVD can be used to replace ALD for deposition method. The parameters for PECVD deposition of SiO2 are: reaction gas SiH4 / O2 (flow ratio 1:4), RF power 150W, deposition temperature 200 ℃, and thickness 15 nm.

[0036] S3. Deposit a functional material layer on the surface of the insulating barrier layer.

[0037] Specifically, a functional material layer is deposited on the surface of the photolithographic pattern using magnetron sputtering or electron beam evaporation, with a deposition vacuum degree ≤5×10⁻⁶. -4 Pa, with a deposition rate of 0.1–1 nm / s, ensures the compactness of the material layer (porosity ≤1%).

[0038] For example, a magnetron sputtering system was used with a pure zirconium (Zr) target as the sputtering source, and a vacuum level of 5 × 10⁻⁶. -4 Argon gas (flow rate 20 sccm) was introduced at Pa, sputtering power 80 W, deposition rate 0.5 nm / s, and a 50 nm thick Zr functional material layer was deposited on the photolithographic pattern surface. The chip temperature was controlled below 80 °C during the deposition process, and the porosity of the material layer was 0.8%.

[0039] Alternatively, Nb, Y, Zr-Nb alloys (mass ratio 1:1) or TiN can be used to replace Zr, with the thickness adjusted to 10–100 nm. TiN deposition utilizes reactive magnetron sputtering with a Ti target, N2 / Ar reactive gases (flow ratio 1:5), a sputtering power of 120 W, a thickness of 40 nm, and a bulk resistivity of 5 × 10⁻⁶. -6 Ω·m; The selection of different alternative materials is based on their differences in "absorption edge" and environmental adaptability in specific energy bands: Compared with Zr-Nb alloys, pure Zr has higher mechanical strength and oxidation resistance, which can improve the structural stability of large-size micro-nano structures without increasing thickness (maintaining high transmittance); Y has a wider transmission window in the soft X-ray band, which is beneficial to broadening the detection energy spectrum; while TiN, as a metal ceramic material, has both extremely low optical penetration depth and excellent conductivity (volume resistivity 5×10). -6 With an Ω·m thickness of 40 nm, it can achieve high reflection suppression of infrared light through strong plasma resonance, and its corrosion resistance and radiation resistance make its performance degradation rate in complex space plasma environment much lower than that of traditional metal thin films.

[0040] S4. Spin-coat photoresist onto the surface of the functional material layer and pattern it.

[0041] Specifically, a photoresist layer is spin-coated onto the surface of the functional material layer. The photoresist used is ultraviolet, deep ultraviolet, or electron beam photoresist. The spin-coating speed is 3000–5000 rps, the spin time is 20–40 s, and the thickness is 50–200 nm. Subsequently, it is baked on a hot plate at 90–150 ℃ for 1–2 min. Afterward, the photoresist layer is exposed using deep ultraviolet lithography (DUV) or electron beam lithography (EBL) at an exposure dose of 50–200 mJ / cm² (DUV) or 100–5000 μc / cm² (EBL). After exposure, it is immersed in developer for 30–60 s, fixed, rinsed for 1–2 min, and dried, thus forming the photoresist pattern.

[0042] For example, an electron beam photoresist AR-P 6200.09 was spin-coated onto the surface of the material layer at a rotation speed of 4000 rps for 60 s, forming a thickness of 200 nm. The chip was then baked on a hot plate at 110 ℃ for 2 min and allowed to cool naturally to room temperature. Subsequently, the photoresist layer was exposed using electron beam lithography at an exposure dose of 600 mJ / cm², resulting in a one-dimensional fringe grating pattern (period 200 nm, linewidth 100 nm). After exposure, the chip was immersed in AR 600-546 developer for 60 s, fixed with AR600-60 for 30 s, immersed in deionized water for 30 s, and dried with nitrogen to obtain the photoresist pattern.

[0043] The micro / nano structure prepared in this application embodiment is a one-dimensional striped grating. Alternatively, a two-dimensional circular aperture array (period 300 nm, aperture 150 nm), a cross-shaped grating (period 400 nm, linewidth 80 nm), or a quasi-periodic structure can be used to replace the one-dimensional striped grating. This can be achieved by adjusting the photolithography pattern to ensure that the stray light suppression rate is ≥90%.

[0044] S5. Using patterned photoresist as a mask, the functional material layer is etched to form a patterned co-integrated functional material layer.

[0045] Specifically, functional materials are etched using reactive ion etching (RIE) or inductively coupled plasma etching (ICP). The etching time is controlled, and a material layer of a certain thickness is etched downward under the photoresist mask to form a patterned co-integrated functional material layer.

[0046] For example, the sample was placed in a plasma etching machine with etching gases of Cl2 30 sccm, BCl3 10 sccm, and Ar 5 sccm. The etching pressure was set to 1 Pa, the ICP power to 600 W, the Bias power to 100 W, and the etching depth to 30 nm, forming a patterned co-integrated functional material layer.

[0047] Furthermore, deep ultraviolet lithography can be used instead of electron beam lithography for photolithography; electron beam evaporation can be used instead of magnetron sputtering for functional material deposition, with an evaporation rate of 0.3 nm / s and a vacuum level of 1×10⁻⁶. -4 Pa.

[0048] S6. Remove the photoresist and fabricate electrode leads on the co-integrated functional material layer.

[0049] Specifically, the sample is immersed in a stripping solvent (such as acetone or N-methylpyrrolidone (NMP)) and sonicated for 5–15 min (NMP solvent is heated to 40–60 °C) to strip the sacrificial adhesive and surface-attached functional materials, forming the target micro / nano structure; then, electrode leads are added to the co-integrated functional material layer by wire bonding.

[0050] For example, the chip was immersed in N-methylpyrrolidone (NMP) solvent, heated to 50 °C, and ultrasonically treated for 10 min (power 80 W, frequency 40 kHz) to remove the sacrificial adhesive and the Zr material attached to the surface. The chip was then rinsed with deionized water for 2 min and dried with nitrogen to obtain a Zr functional material layer with a one-dimensional striped grating structure. Subsequently, Au wires with a diameter of 25 μm were bonded to the edge of the functional material layer using a wire bonding device at a thermo-ultrasonic bonding temperature of 200 °C.

[0051] In addition, Ag or Cu can be used instead of Au electrodes. Ag electrodes are deposited by thermal evaporation, with a thickness of 80 nm and a lower resistivity (1.6 × 10⁻⁶). -8 (Ω・m); Cu electrodes require annealing after deposition (150 °C, 30 min) to enhance adhesion.

[0052] S7. Perform surface stabilization treatment on the device.

[0053] Specifically, the surface stabilization treatment includes: placing the device in an oxygen plasma or hydrogen plasma environment for 2–5 min at a power of 30–80 W to reduce the surface energy of the functional material layer and enhance its chemical stability and anti-fouling ability.

[0054] For example, the chip was placed in a plasma treatment device, oxygen was introduced (flow rate 20 sccm), power 50 W, pressure 5 Torr, and the treatment lasted for 3 min to reduce the surface energy of the Zr functional material layer and enhance its chemical stability.

[0055] Furthermore, this application also tests and uses the fabricated device. The detector has a transmittance of 75% in the soft X-ray band, a suppression rate of 92% in visible light (550 nm), and a suppression rate of 95% in infrared light (1000 nm). When heated by electricity, with an applied current of 0.5 A, the surface temperature rises to 250 °C at a heating rate of 8 °C / s. Holding at this temperature for 30 s is sufficient to completely remove the surface carbon contamination layer. After cleaning, the responsivity recovers to 98% of the initial value. After continuous operation in a Sn plasma environment for 300 hours, the dark current increases to 0.4 nA, and the responsivity decay rate is only 3%.

[0056] It should be noted that the method provided in this embodiment is the corresponding preparation method of the product provided in Embodiment 2. Therefore, the parts that are the same as or similar to those in Embodiment 2 in this embodiment can be referred to each other, and will not be repeated in this application.

Claims

1. A multifunctional soft X-ray detector, characterized in that, From bottom to top, it includes: a photoelectric detection chip, an insulating barrier layer, and a co-integrated functional material layer; The co-integrated functional material layer is a thin film that simultaneously possesses light filtering, protection, and online self-cleaning functions; the co-integrated functional material layer is provided with electrode leads for applying driving current.

2. The multifunctional soft X-ray detector according to claim 1, characterized in that, The co-integrated functional material layer has a periodic micro-nano topology, which is selected from a one-dimensional striped grating, a two-dimensional circular aperture array, or a quasi-periodic structure; the period of the periodic micro-nano topology is 50–500 nm, and the feature size is 20–250 nm.

3. The multifunctional soft X-ray detector according to claim 2, characterized in that, The material of the co-integrated functional material layer is selected from zirconium, niobium, yttrium, zirconium-niobium alloy, or titanium nitride; its thickness is 10–100 nm; and its bulk resistivity is 10⁻⁶. -7 -10 -6 Ω·m.

4. The multifunctional soft X-ray detector according to claim 3, characterized in that, The electrode material of the electrode leads is selected from gold, silver or copper, and the electrode spacing is 0.5–5 mm; the surface temperature of the co-integrated functional material layer can be adjusted to 150–400 ℃ when energized.

5. The multifunctional soft X-ray detector according to claim 4, characterized in that, The insulating barrier layer is selected from alumina, silicon oxide, silicon nitride, hafnium oxide or composite materials thereof; its thickness is 5–50 nm and its breakdown voltage is ≥100 V.

6. The multifunctional soft X-ray detector according to claim 5, characterized in that, The photodetector chip is selected from silicon photodiodes, gallium nitride photodiodes, or silicon carbide photodiodes; its photosensitive area is 0.1–10 mm², and its dark current at room temperature is ≤0.5 nA.

7. The multifunctional soft X-ray detector according to claim 6, characterized in that, The co-integrated functional material layer provides physical protection against ion bombardment with energies ≥50 eV.

8. A method for fabricating a multifunctional soft X-ray detector as described in any one of claims 1 to 7, characterized in that, include: S1. Provide photoelectric detection chips and perform preprocessing; S2. Deposit an insulating barrier layer on the surface of the photosensitive area of ​​the photodetector chip; S3. Deposit a functional material layer on the surface of the insulating barrier layer; S4. Spin-coat photoresist onto the surface of the functional material layer and pattern it; S5. Using patterned photoresist as a mask, the functional material layer is etched to form a patterned co-integrated functional material layer; S6. Remove the photoresist and fabricate electrode leads on the co-integrated functional material layer; S7. Perform surface stabilization treatment on the device.

9. The method for fabricating a multifunctional soft X-ray detector according to claim 8, characterized in that, In S1, the pretreatment includes: ultrasonic cleaning with acetone and / or isopropanol for 10–20 min to remove surface organic contaminants, followed by treatment with a plasma cleaner for 3–8 min to remove the surface oxide layer and residual particles.

10. The method for fabricating a multifunctional soft X-ray detector according to claim 9, characterized in that, In S7, the surface stabilization treatment includes: placing the device in an oxygen plasma or hydrogen plasma environment for 2–5 min at a power of 30–80 W.

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