Micro light emitting diode based on polarization orientation difference regulation and preparation method thereof

By constructing nitride epitaxial structures with polarization orientation differential control in Micro-LEDs and using selective wet etching, the sidewall damage problem caused by dry etching is solved, thereby improving the luminous efficiency and device performance of Micro-LEDs.

CN122121356APending Publication Date: 2026-05-29XIDIAN UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
XIDIAN UNIV
Filing Date
2026-01-29
Publication Date
2026-05-29

AI Technical Summary

Technical Problem

In the current Micro-LED fabrication process, sidewall damage and non-radiative recombination caused by dry etching severely affect luminous efficiency, and existing solutions are insufficient to fundamentally improve device performance.

Method used

By constructing a nitride epitaxial structure on a substrate where metallic and nitrogen polarities coexist, a homogeneous junction is formed. The carrier migration is controlled by the difference in polarization orientation. Combined with selective wet etching, the self-selection definition of the light-emitting region of Micro-LED is realized, avoiding sidewall etching damage.

Benefits of technology

It significantly suppresses carrier diffusion to the sidewalls, improves luminous efficiency, and maintains high efficiency without decreasing during size reduction, thus achieving high-efficiency luminescence of Micro-LEDs.

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Abstract

The application discloses a micro light emitting diode based on polarization orientation difference regulation and a preparation method thereof. The micro light emitting diode comprises a substrate layer, and a plurality of first regions and second regions arranged alternately on the substrate layer; the first region comprises a non-doped nitrogen-polar nitride layer, a first n-type ohmic contact layer and an n-type electrode which are sequentially stacked; the second region comprises a nucleation layer, a non-doped metal-polar nitride layer, a second n-type ohmic contact layer, a multi-quantum well active region, an electron blocking layer, a p-type hole injection layer, a p++-type ohmic contact layer and a p-type electrode which are sequentially stacked; wherein the second region is a light emitting unit of the device, and a mesa structure thereof is defined by wet etching; the first region and the adjacent second region form a homopolar junction in the horizontal direction. By constructing nitride epitaxial structures with different polarities on the same substrate, a lateral carrier migration potential barrier is formed, and at the same time, etching damage is eliminated by wet etching, so that side wall non-radiative recombination is avoided.
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