Physical vapor deposition equipment, physical vapor deposition method and synchronous control system

Abstract

This application discloses a physical vapor deposition (PVD) apparatus, a PVD method, and a synchronous linkage controller, belonging to the field of PVD technology. The system includes: a cavity, a chuck, a magnetron, a drive unit, a pulse control power supply, and a synchronous linkage controller. The PVD apparatus includes a target placement area for mounting the target material. The chuck is located inside the cavity; the target placement area is located at the top of the cavity; the pulse control power supply is connected to the target material; the magnetron is connected to the drive unit; both the pulse control power supply and the drive unit are connected to the synchronous linkage controller; the synchronous linkage controller controls the pulse control power supply to output pulses with discharge parameters corresponding to the current position of the magnetron. This application can independently control the discharge parameters of the pulses used by the pulse control power supply when the magnetron moves to different positions on the target material, to meet the different plasma density and ion energy requirements of different positions on the wafer.

Description

Technical Field

[0001] This application relates to the field of physical vapor deposition technology, and in particular to a physical vapor deposition apparatus, a physical vapor deposition method, and a synchronous linkage controller. Background Technology

[0002] To achieve optimal step coverage in deep vias with high aspect ratios, the main solution in PVD (Physical Vapor Deposition) technology is to improve ionization rate. Currently, the PVD technologies used in the semiconductor field to improve ionization rate are primarily SIP (Self-Ionized Plasma) and IMP (Ionized Metal Plasma). However, during process applications, SIP and IMP technologies suffer from uneven plasma density due to mechanical motion, structural constraints, gas flow, and localized imbalances in magnetic or electric field distributions. This leads to differences in film deposition and via filling effects across the wafer, manifesting as radial and circumferential non-uniformity. Furthermore, this technology architecture requires ion flux from a plasma source and ion energy from a bias voltage applied to the wafer. This continuous plasma discharge and the applied bias voltage across the entire wafer represent a uniform process control across the entire wafer, making it difficult to effectively control localized plasma density and ion energy at different locations on the wafer. Therefore, it is difficult to simultaneously achieve excellent step coverage and uniformity of film deposition and pore filling effects. Summary of the Invention

[0003] This application discloses a physical vapor deposition (PVD) apparatus, a physical vapor deposition method, and a synchronous linkage controller, which solves the problem that it is difficult to effectively control the local plasma density and ion energy at different locations on the wafer by uniformly controlling the entire wafer through continuous plasma discharge and applying bias voltage across the entire wafer.

[0004] In a first aspect, this application provides a physical vapor deposition apparatus, comprising: a cavity, a chuck, a magnetron, a drive unit, a pulse control power supply, and a synchronous linkage controller, wherein the physical vapor deposition apparatus is provided with a target placement area for mounting a target; the chuck is located inside the cavity; and the target placement area is located at the top of the cavity;

[0005] The pulse control power supply is used to connect to the target material; the magnetron is connected to the drive unit; both the pulse control power supply and the drive unit are connected to the synchronous linkage controller.

[0006] The synchronous linkage controller is used to control the pulse control power supply to output pulses with discharge parameters corresponding to the current position of the magnetron.

[0007] This application leverages the low-frequency and pulsed-interval discharge characteristics of a pulse-controlled power supply, and uses a synchronous linkage controller to coordinate the rotation position of the magnetron with the discharge parameters of the pulses in the pulse-controlled power supply. When the magnetron rotates to different positions, the synchronous linkage controller can control the pulse-controlled power supply to output pulses with discharge parameters corresponding to the current position. Since the plasma is mainly confined below the target by the magnetron, and the discharge parameters of the pulses used by the pulse-controlled power supply can be independently controlled when the magnetron rotates to different positions, plasmas with different plasma densities and ion energies can be provided to different positions below the target. When process optimization is required... When the magnetron rotates to a specific position above the microstructure on the wafer surface, the step coverage at that specific position can be controlled by independently controlling the discharge parameters of the pulsed power supply when the magnetron moves to that specific position on the target. At the same time, for different positions on the wafer surface, since the process optimization requirements for plasma density and ion energy are different at different positions, the discharge parameters of the pulsed power supply when the magnetron moves to different positions on the target can be independently controlled to ensure that the thin film deposition and via filling effect are consistent at different positions. Thus, it is possible to achieve both excellent step coverage and uniformity of thin film deposition and via filling effect.

[0008] In one possible implementation, the physical vapor deposition apparatus further includes a capacitive coupling circuit; one end of the capacitive coupling circuit is connected to a chuck, and the other end is connected to a first radio frequency power supply, ground, or levitation.

[0009] This application connects a first radio frequency (RF) power supply to the chuck via a capacitive coupling circuit, which can power the wafer placed on the chuck, subjecting the wafer to a negative DC bias to further accelerate ion bombardment. Furthermore, since the process does not require strong ion bombardment of the wafer, or the positive pulse of the pulse control power supply itself already provides effective ion bombardment, the chuck can be decoupled from the first RF power supply and can be kept suspended via the capacitive coupling circuit or directly grounded, thereby simplifying the structure.

[0010] In one possible implementation, the physical vapor deposition apparatus further includes a collimator and a DC power supply; the collimator is located between the target placement area and the chuck; the collimator includes a plurality of through holes; the through holes extend perpendicularly to the chuck; the DC power supply is connected to the collimator and applies a positive bias voltage to the collimator.

[0011] In this application, due to process requirements, ions need to move toward the wafer. A collimator with vertical through holes can be applied between the target placement area and the wafer to collimate the ions. The collimator can be connected to a DC power supply as needed to apply a positive bias voltage to the collimator, so that the sidewalls of the through holes in the collimator can repel ions and are not easily attached to the sidewalls, thus making it easier for them to pass through the through holes.

[0012] In a second aspect, the present application provides a physical vapor deposition method, including:

[0013] Obtaining the current position of the magnetron;

[0014] Controlling the pulsed control power supply to output a pulse having a discharge parameter corresponding to the current position.

[0015] The present application adopts the above physical vapor deposition method, based on the characteristics of the low frequency and pulsed intermittent discharge of the pulsed control power supply, and through the interlocking control of the rotation position of the magnetron and the discharge parameters of the pulse in the pulsed control power supply; when the magnetron rotates to different positions, the current position can be obtained, and the pulsed control power supply is controlled to output a pulse having a discharge parameter corresponding to the current position; since the plasma is confined by the magnetron below the target, and when the magnetron rotates to different positions, the discharge parameters of the pulse adopted by the pulsed control power supply can be independently controlled, so as to provide plasmas with different plasma densities and ion energies for different positions below the target; when process optimization is required, when the magnetron rotates above a specific position where the microstructures on the wafer surface are located, by independently controlling the discharge parameters of the pulse adopted by the pulsed control power supply when the magnetron moves to a specific position of the target, the step coverage rate of the specific position can be controlled; at the same time, for different positions on the wafer surface, since the process optimization requirements for the plasma density and ion energy of the plasma at different positions are different, by independently controlling the discharge parameters of the pulse adopted by the pulsed control power supply when the magnetron moves to different positions of the target, the film deposition and via filling effects at different positions are ensured to be consistent, so as to achieve both excellent step coverage rate and uniformity of the film deposition and via filling effects.

[0016] In a possible implementation manner, the discharge parameter includes at least one of a negative pulse parameter, a positive pulse parameter, a pulse period, and a duty cycle;

[0017] The negative pulse parameter includes a negative pulse voltage amplitude and / or a negative pulse width; the positive pulse parameter includes a positive pulse voltage amplitude and / or a positive pulse width.

[0018] In this application, the negative pulse parameter represents the negative pulse, and the positive pulse parameter represents the positive pulse. Both the negative and positive pulse parameters correspond one-to-one with the current position of the magnetron. The negative pulse applied to the target placement area can be used to generate plasma, and the positive pulse applied to the target placement area can be used to provide energy to the plasma. Therefore, by adjusting the amplitude and / or pulse width of the negative pulse, the plasma density can be effectively controlled, thereby affecting the deposition rate and ion density in the process. Similarly, by adjusting the amplitude and / or pulse width of the positive pulse, the ion energy can be effectively controlled. Furthermore, the reciprocal of the pulse period is the frequency; adjusting the pulse period can adjust the frequency of plasma generation. The duty cycle is the ratio of the pulse width of the negative pulse to the pulse period; adjusting the duty cycle can adjust the plasma density.

[0019] In one possible implementation, the control pulse controls the power supply output to have a pulse having discharge parameters corresponding to the current position, including:

[0020] The discharge parameters of the pulse corresponding to the current position are determined from the mapping relationship between the discharge parameters of the pulse and the current position.

[0021] The discharge parameters corresponding to the current position are sent to the pulse control power supply, so that the pulse control power supply outputs a pulse with the discharge parameters corresponding to the current position.

[0022] This application utilizes the mapping relationship between the discharge parameters of the pulse and the current position to directly determine and output the corresponding discharge parameters, thus achieving precise matching between the discharge parameters and the current position.

[0023] In one possible implementation, the mapping relationship between discharge parameters and the current position includes a mapping table between discharge parameters and the current position, a mapping curve between discharge parameters and the current position, or a mapping function between discharge parameters and the current position.

[0024] This application provides various forms of mapping relationships between discharge parameters and current position, which can be adapted to different application scenarios.

[0025] In one possible implementation, obtaining the current position of the magnetron includes:

[0026] The coordinates of the current position of the magnetron rotation are determined by calculating the pre-stored components in two directions based on the current rotation radius and rotation angle of the transmission structure in the drive component.

[0027] This application utilizes the rotation radius and rotation angle of the transmission structure in the drive component to determine the coordinates of the current position of the magnetron, which enables simple and accurate positioning of the current position of the magnetron.

[0028] In one possible implementation, the coordinates include an abscissa and a ordinate, and the formula for calculating the abscissa is:

[0029] ;

[0030] The formula for calculating the ordinate is:

[0031] ;

[0032] In the formula, Represents the x-axis; Represents the ordinate; Indicates the radius of rotation; Indicates the rotation angle.

[0033] This application utilizes trigonometric relationships to convert the rotation radius and rotation angle of the transmission structure into position coordinates, thereby achieving accurate calculation of the current position of the magnetron.

[0034] Thirdly, this application provides a synchronous linkage controller, including:

[0035] The position acquisition module is used to acquire the current position of the magnetron;

[0036] The pulse control module is used to control the pulse control power supply to output pulses with discharge parameters corresponding to the current position.

[0037] This application employs the aforementioned synchronous linkage controller, based on the low-frequency and pulsed interval discharge characteristics of the pulse control power supply, and uses the synchronous linkage controller to link the rotation position of the magnetron with the discharge parameters of the pulses in the pulse control power supply. When the magnetron rotates to different positions, the position acquisition module can acquire the current position, and the pulse control module controls the pulse control power supply to output pulses with discharge parameters corresponding to the current position. Since the plasma is confined below the target by the magnetron, and the discharge parameters of the pulses used by the pulse control power supply can be independently controlled when the magnetron rotates to different positions, plasmas with different plasma densities and ion energies are provided to different positions below the target. During process optimization, when the magnetron rotates to a specific position above the microstructure on the wafer surface, the pulse control module independently controls the discharge parameters of the pulse control power supply when the magnetron moves to the specific position of the target material. This allows for control of the step coverage at that specific position. Simultaneously, for different positions on the wafer surface, since the process optimization requirements for plasma density and ion energy vary at different locations, the pulse control module independently controls the discharge parameters of the pulse control power supply when the magnetron moves to different positions of the target material. This ensures consistent thin film deposition and via filling effects at different positions, thereby achieving both excellent step coverage and uniformity in thin film deposition and via filling effects. Attached Figure Description

[0038] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0039] Figure 1 This is a schematic diagram of the structure of a first physical vapor deposition apparatus provided in an embodiment of this application;

[0040] Figure 2 A schematic diagram of the voltage waveform output of a Bipolar-HiPIMS power supply provided for an embodiment of this application;

[0041] Figure 3 This is a schematic diagram of the structure of a second physical vapor deposition apparatus provided in an embodiment of this application;

[0042] Figure 4 This is a schematic diagram of the structure of a third physical vapor deposition apparatus provided in an embodiment of this application;

[0043] Figure 5 This is a schematic diagram of the structure of the fourth physical vapor deposition apparatus provided in the embodiments of this application;

[0044] Figure 6 A flowchart of a physical vapor deposition method provided in this application embodiment;

[0045] Figure 7 This is an architecture diagram of a synchronous linkage controller provided in an embodiment of this application.

[0046] Explanation of reference numerals in the attached figures:

[0047] 10-Cavity;

[0048] 11-Target placement area;

[0049] 12-Pulse Control Power Supply;

[0050] 121 - Negative pulse voltage amplitude; 122 - Negative pulse pulse width; 123 - Delay; 124 - Positive pulse voltage amplitude; 125 - Positive pulse pulse width; 126 - Pulse period;

[0051] 13-Magnetron;

[0052] 14-Drive components;

[0053] 15-Chuck;

[0054] 161 - First RF power supply; 162 - Second RF power supply;

[0055] 17-Capacitive coupling circuit;

[0056] 18-coil;

[0057] 19-Synchronous linkage controller;

[0058] 20 - Alignment component; 201 - Main body; 202 - Connecting part. Detailed Implementation

[0059] PVD technology is a crucial component of semiconductor integrated circuit manufacturing, used in logic and memory manufacturing processes to deposit various metal layers and related material layers. Especially at advanced nodes, the dimensions of wires and interconnects between devices are continuously shrinking, as are the feature sizes of vertically extending vias and horizontally extending trenches for interconnection. In this PVD process scenario, a significant challenge is how to more effectively fill vias and achieve good sidewall or bottom coverage with the sputtered thin film material.

[0060] To achieve optimal step coverage in deep vias with high aspect ratios, the main solution in PVD technology is to increase ionization rate. This allows higher-density ions to be accelerated and more accurately propelled into the vias by a bias voltage applied to the wafer, thus reducing via overhang. Simultaneously, the higher-energy ions bombard the bottom of the top-deposited film, creating an etching (or reverse sputtering) effect to supplement the sidewall coverage. In PVD technology, ionization rate refers to the proportion of gas ionized during sputtering deposition, a key indicator of the degree of gas ionization in the sputtering process. Currently, SIP (Self-Ionized Plasma) and IMP (Ionized Metal Plasma) technologies are mainly used to improve ionization rate. SiP (Solid Injection) technology uses a target, magnetron, and power supply to form the plasma source. By optimizing the magnetron design (typically using small-sized magnetrons with high magnetic field strength) and high-power power supply functionality, high target power density is achieved, significantly reducing dependence on process gases (such as Ar) and enabling self-sustaining high-density, high-ionization plasma. Furthermore, by reducing collisions and scattering between ionized sputtered particles and gas particles, the directionality of ionized particles is enhanced, which is beneficial for via filling. IMP (Inductively Coupled Plasma) technology is an enhanced ionization magnetron sputtering technology. Its core to enhancing ionization rate is to introduce an additional ionization source between the main magnetron sputtering plasma source on the target and the wafer. This is typically a coil connected to an RF power supply, which generates a large number of ions (including metal ions and gas ions) and electrons through ICP (Inductively Coupled Plasma) to achieve a high ionization rate.

[0061] Meanwhile, to improve production efficiency, reduce manufacturing costs, and enhance product quality, manufacturers use large wafer sizes and aim to achieve superior uniformity across the entire wafer while ensuring the aforementioned step coverage. Therefore, uniformity is also a core performance indicator in PVD processes. When designing a PVD system, the uniformity of deposition on the wafer is improved by optimizing the magnetron design and enabling the magnetron to move across the entire target.

[0062] When SiP (Silicon In-Place) and IMP (In-Mesh Processing) technologies are applied, mechanical motion, structural constraints, gas flow, and local imbalances in magnetic or electric field distribution can lead to non-uniform plasma density. This results in differences in thin film deposition and via filling effects across the wafer, manifesting as radial and circumferential non-uniformity. In particular, in IMP technology, inconsistencies in the induced RF power and electric field at different circumferential positions within the ICP cavity further introduce non-uniformity in plasma distribution, exacerbating the circumferential non-uniformity of the thin film deposition on the wafer.

[0063] Generally, process non-uniformities can be mitigated by optimizing process parameters, such as electromagnetic coil settings, source discharge parameters, and gas flow or bias RF power. However, this can lead to some deviation between the optimized process window for ion-filling and the optimal uniformity window across the entire wafer, making it impossible to simultaneously achieve excellent uniformity and good step coverage, or resulting in a narrow usable process window. Furthermore, under the SiP and IMP technology architectures, ion flux is provided by a plasma source from the source, and ion energy is provided by a bias applied to the wafer. This continuous plasma discharge and the applied bias across the entire wafer represent a unified process control for the entire wafer, making it difficult to effectively control local plasma density and ion energy at different locations on the wafer. Therefore, it is difficult to simultaneously achieve excellent step coverage and uniformity in thin film deposition and via filling.

[0064] Therefore, this application provides a physical vapor deposition apparatus. The technical solution of this application, based on the related technology that provides plasma from the source electrode as a whole and achieves an overall ion acceleration effect on the wafer, generates plasmas with different plasma densities and ion energies when the magnetron is moved to different positions on the target material, thereby achieving the effect of local adjustment of plasma density and ion energy for different positions on the wafer, thus solving the above-mentioned technical problems.

[0065] Example 1

[0066] Please refer to Figure 1 , Figure 1This is a schematic diagram of a physical vapor deposition (PVD) apparatus provided in an embodiment of this application. The system may include: a cavity 10, a chuck 15, a magnetron 13, a drive unit 14, a pulse control power supply 12, and a synchronous linkage controller 19. The PVD apparatus is provided with a target placement area 11 for mounting a target. The chuck 15 is located inside the cavity 10. The target placement area 11 is located at the top of the cavity 10.

[0067] The pulse control power supply 12 is used to connect to the target material; the magnetron 13 is connected to the drive unit 14; both the pulse control power supply 12 and the drive unit 14 are connected to the synchronous linkage controller 19.

[0068] The synchronous linkage controller 19 is used to control the pulse control power supply 12 to output a pulse with discharge parameters corresponding to the current position of the magnetron 13.

[0069] It should be noted that the target placement area 11 in this embodiment can be used to install the target; after the target is installed in the target placement area 11, the front of the target faces the inside of the magnetron cavity 10 and the back of the target faces the magnetron tube 13; the driving component 14 drives the magnetron tube 13 to rotate on the back of the target.

[0070] It should be noted that in this embodiment, the discharge parameters of the pulse correspond one-to-one with the current position of the magnetron 13. In this embodiment, the pulse control power supply 12, under the control of the synchronous linkage controller 19, sets the discharge parameters corresponding to the current position of the magnetron 13 and outputs a pulse with discharge parameters corresponding to the current position of the magnetron 13. The discharge parameters may include negative pulse parameters and positive pulse parameters, where negative pulse parameters represent negative pulses and positive pulse parameters represent positive pulses. Both negative and positive pulse parameters correspond one-to-one with the current position of the magnetron 13. In this embodiment, the negative pulse applied to the target placement area 11 can be used to generate plasma, and the positive pulse applied to the target placement area 11 can be used to provide energy to the plasma. Therefore, the plasma density can be controlled by the negative pulse parameters, and the ion energy can be controlled by the positive pulse parameters. Accordingly, in this embodiment, controlling the pulse control power supply to output a pulse with discharge parameters corresponding to the current position of the magnetron 13 can cause the target placement area 11 to generate plasma with plasma density and ion energy corresponding to the current position.

[0071] This embodiment does not limit the specific type of pulse control power supply 12, as long as it can output both negative and positive pulses. For example, the pulse control power supply 12 can be a Bipolar-HiPIMS (bipolar pulse high-power impulse magnetron sputtering) power supply; Figure 2As shown, the pulses output by the Bipolar-HiPIMS power supply include negative pulses and positive pulses that switch after a delay of 123.

[0072] It should be noted that HiPIMS (high power impulse magnetron sputtering) power supplies include negative pulses, while Bipolar-HiPIMS power supplies consist of a positive pulse immediately following the negative pulse of the HiPIMS power supply. HiPIMS power supplies utilize short pulse widths and low duty cycles to achieve extremely high peak power densities in each negative pulse discharge, thereby generating plasmas with high ionization rates and ultra-high density. In Bipolar-HiPIMS power supplies, after providing high-density plasma with a negative pulse, the applied positive pulse electric field accelerates ions near the target, increasing their energy. Furthermore, the positive pulse increases the plasma potential, thereby providing energy through the sheath near the wafer to accelerate ion bombardment of the wafer.

[0073] This embodiment does not limit the specific type of negative pulse parameters, as long as the plasma density can be controlled. For example: Figure 2 As shown, the negative pulse parameters may include the negative pulse voltage amplitude 121 and / or the negative pulse width 122. It should be noted that, in this embodiment, by adjusting the negative pulse voltage amplitude and / or pulse width, the plasma density can be effectively controlled, thereby affecting the deposition rate and ion density in the process. This embodiment does not limit the specific method by which the pulse control power supply 12 sets the negative pulse parameters; for example, the pulse control power supply 12 can set the negative pulse parameters based on a constant voltage mode, a constant power mode, or a constant current mode.

[0074] This embodiment does not limit the specific type of positive pulse parameters, as long as the ion energy can be controlled. For example: Figure 2 As shown, the positive pulse parameters may include a positive pulse voltage amplitude of 124 and / or a positive pulse width of 125. It should be noted that in this embodiment, ion energy can be effectively controlled by adjusting the positive pulse voltage amplitude and / or pulse width. This embodiment does not limit the specific method by which the pulse control power supply 12 sets the negative pulse parameters; for example, the pulse control power supply 12 can set the positive pulse parameters based on a constant voltage mode.

[0075] Furthermore, such as Figure 2 As shown, the discharge parameters in this embodiment may further include the pulse period 126 and / or the duty cycle. It should be noted that in this embodiment, the reciprocal of the pulse period 126 is the frequency; adjusting the pulse period 126 can adjust the frequency of plasma generation. The duty cycle is the ratio of the negative pulse width 122 to the pulse period 126; adjusting the duty cycle can adjust the plasma density.

[0076] It should be noted that in this embodiment, the magnetron 13 is used to generate a magnetic field. In this embodiment, the negative pulse output by the pulse control power supply 12 can provide a negative voltage to the target in the target placement area 11. Under the action of the magnetic field of the magnetron 13, the plasma can be confined below the target.

[0077] It should be noted that in this embodiment, the driving component 14 is used to drive the magnetron 13 to perform periodic scanning across the entire back surface of the target in the target placement area 11, so that the magnetron 13 rotates at different positions on the back surface of the target. This embodiment does not limit the specific type of the driving component 11, as long as it can drive the magnetron 13 to rotate. For example, the driving component 11 may include a transmission structure and a motor. This embodiment does not limit the specific scanning trajectory, which can be determined according to actual needs. For example, the scanning trajectory of the magnetron 13 can be set according to the uniformity of the film layer deposited on the wafer surface and the uniformity of the corrosion morphology of the target, specifically including point-by-point scanning or segmented scanning. Among them, point-to-point scanning scans position by position, and the pulse discharge parameters used by the pulse control power supply 12 are different when the magnetron 13 moves to different positions; segmented scanning scans segment by segment, and each segment of the trajectory includes multiple different positions. When the magnetron 13 moves to different positions within the same segment of the trajectory, the pulse discharge parameters used by the pulse control power supply 12 are the same; when the magnetron 13 moves to different positions of different segments of the trajectory, the pulse discharge parameters used by the pulse control power supply 12 are different.

[0078] It should be noted that, due to the varying process optimization requirements for plasma density and ion energy at different locations on the wafer surface, existing technologies only optimize the step coverage rate at specific locations of the microstructures on the wafer surface. This results in the use of the same plasma density and ion energy across different locations, making it difficult to simultaneously achieve excellent step coverage and uniformity in thin film deposition and via filling. This embodiment, however, employs a pulse control power supply capable of simultaneously outputting negative and positive pulses. A synchronous linkage controller connects the pulse control power supply and the motor, enabling synchronized control of the magnetron's rotation position and the discharge parameters in the pulse control power supply. Compared to existing technologies, this embodiment, through the synchronized control of the magnetron 13's rotation position and the discharge parameters in the pulse control power supply 12, achieves synchronous control of local plasma density and ion energy. This satisfies both the process optimization requirements at specific locations on the wafer surface and the process optimization requirements at different locations, thereby simultaneously achieving excellent step coverage and uniformity in thin film deposition and via filling.

[0079] This embodiment does not limit the specific control method of the synchronous linkage controller 19, as long as it can ensure the linkage control between the rotation position of the magnetron 13 and the discharge parameters in the pulse control power supply 12. For example, the synchronous linkage controller 19 may include a memory and a processor, with the memory coupled to the processor; the memory is used to store computer programs or instructions and / or data; the processor is used to execute the computer programs or instructions stored in the memory, or to read the data stored in the memory, so as to control the pulse control power supply 12 to output pulses with discharge parameters corresponding to the current position of the magnetron 13. Accordingly, the drive unit 14 needs to be a programmable motion drive unit; the pulse control power supply 12 needs to be a pulse control power supply 12 with waveform programming settings. It should be noted that the synchronous linkage controller 19 used in this embodiment is an electronic device that can ensure that the drive unit 14 and the pulse control power supply 12 can operate in strict time synchronization. The memory and processor in the synchronous linkage controller can realize the timing-based programming output of the magnetron's rotation position and the pulse control power waveform settings. That is, the synchronous linkage controller can programmably control the magnetron to rotate to different positions in the target placement area, and set the discharge parameters of the pulse control power supply according to the different process optimization requirements of plasma density and ion energy at different positions.

[0080] This embodiment does not limit the specific control method, as long as the driving component 14 and the pulse control power supply 12 can operate synchronously. For example:

[0081] In one possible implementation, the synchronous linkage controller 19 can be directly connected to the drive unit 14 and executed by the processor:

[0082] The current position of the magnetron 13 rotation is determined by the current mechanical parameters of the drive component 14;

[0083] The discharge parameters of the pulse corresponding to the current position are determined from the mapping relationship between the discharge parameters of the pulse and the current position.

[0084] The discharge parameters corresponding to the current position are sent to the pulse control power supply 12, so that the pulse control power supply 12 outputs a pulse with the discharge parameters corresponding to the current position.

[0085] In one possible implementation, the mapping relationship between the pulse discharge parameters and the current position can be directly stored in the memory of the synchronous linkage controller 19; when it is necessary to obtain the mapping relationship between the pulse discharge parameters and the current position, the processor can retrieve it from the memory. In another possible implementation, the mapping relationship between the pulse discharge parameters and the current position can also be stored in the host computer; when it is necessary to obtain the mapping relationship between the pulse discharge parameters and the current position, the processor can retrieve it from the host computer.

[0086] It should be noted that this embodiment utilizes the mapping relationship between the discharge parameters of the pulse and the current position to directly determine and output the corresponding discharge parameters, thus achieving precise matching between the discharge parameters and the current position.

[0087] This embodiment does not limit the specific method of determining the current position. The appropriate method can be selected based on the specific type of the driving component 14. For example, when the driving component 11 includes a transmission structure and a motor, the mechanical parameters of the driving component 11 can include the rotation radius and rotation angle of the transmission structure. The corresponding synchronous linkage controller 19 can calculate the pre-stored components in two directions using the current rotation radius and rotation angle of the transmission structure in the driving component 14 to determine the coordinates of the current position of the magnetron 13. It should be noted that this embodiment uses the rotation radius and rotation angle of the transmission structure in the driving component 14 to determine the coordinates of the current position of the magnetron 13, which can easily and accurately locate the current position of the magnetron 13.

[0088] In one possible implementation, the coordinates may include an abscissa and a ordinate, where the rotation center of the transmission structure is set as... The initial rotation position is Furthermore, when rotating counterclockwise, the formula for calculating the x-coordinate can be:

[0089] ;

[0090] The formula for calculating the ordinate is:

[0091] ;

[0092] In the formula, Represents the x-axis; Represents the ordinate; Indicates the radius of rotation; Indicates the rotation angle.

[0093] It should be noted that in this embodiment, the rotation radius and rotation angle of the transmission structure are converted into position coordinates using trigonometric functions, thereby achieving accurate calculation of the current position of the magnetron 13.

[0094] This embodiment does not limit the specific type of mapping relationship between the discharge parameters of the pulse and the current position, as long as it can represent a one-to-one correspondence between the discharge parameters and the current position. For example, it can include a mapping table of discharge parameters and the current position, a mapping curve of discharge parameters and the current position, or a mapping function of discharge parameters and the current position. The mapping table of discharge parameters and the current position can include at least two columns: one column showing the current position coordinates, and the other column showing the discharge parameters corresponding to the current position coordinates. The mapping curve of discharge parameters and the current position can be a curve with the current position coordinates as the abscissa and the discharge parameters as the ordinate. The mapping function of discharge parameters and the current position can be a function with the current position coordinates as the independent variable and the discharge parameters as the dependent variable. It should be noted that this embodiment provides multiple forms of mapping relationships between discharge parameters and the current position to adapt to different application scenarios.

[0095] In another possible implementation, the synchronous linkage controller 19 can also be connected to the drive unit 14 via a host computer. The host computer determines the current position of the magnetron 13's rotation based on the current mechanical parameters of the drive unit 14, and the synchronous linkage controller 19 obtains the current position of the magnetron 13's rotation from the host computer. It should be noted that in this implementation, when the drive unit 11 includes a transmission structure and a motor, and the mechanical parameters of the drive unit 11 include the rotation radius and rotation angle of the transmission structure, the host computer can also calculate the pre-stored components in two directions based on the current rotation radius and rotation angle of the transmission structure in the drive unit 14 to determine the coordinates of the current position of the magnetron 13's rotation, as detailed in the above implementation. The synchronous linkage controller 19, however, needs to obtain the current position of the magnetron 13's rotation from the host computer.

[0096] It should be noted that, compared with the prior art, this embodiment simultaneously incorporates both software modifications (software upgrades) and hardware modifications (component improvements or additions). The software modification involves developing software to connect the pulse control power supply 12 and the drive unit 14 using a synchronous linkage controller 19, enabling the programmed output of the rotational position of the magnetron 13 and the waveform settings of the pulse control power supply 12. The hardware modification involves a design in the cavity 10 requiring the application of a programmable motion drive unit 14 to drive the magnetron 13 to perform periodic scanning across the entire back surface of the target material, with the pulse control power supply 12 connected to the drive unit 14 using a synchronous linkage controller 19. The pulse control power supply 12, with its programmable waveform settings, outputs a pulse with discharge parameters corresponding to the current position after the magnetron rotates to its current position, under the control of the synchronous linkage controller 19.

[0097] In this embodiment, the chuck 15 is used to carry the wafer. This embodiment does not limit the specific type of chuck 15, as long as it can carry the wafer; for example, the chuck 15 can be an electrostatic chuck 15. Figure 1As shown, this embodiment may further include a first radio frequency power supply 161 and a capacitive coupling circuit 17; the first radio frequency power supply 161 is connected to the chuck 15 via the capacitive coupling circuit 17. It should be noted that in this embodiment, by connecting the first radio frequency power supply 161 to the chuck 15 via the capacitive coupling circuit 17, power can be supplied to the wafer placed on the chuck 15, causing the wafer to be negatively biased by DC, thereby further accelerating ion bombardment of the wafer. Furthermore, the chuck 15 may also employ other power supply methods, as can be found in Embodiment Two.

[0098] Based on the above embodiments, this embodiment utilizes the low-frequency and pulsed interval discharge characteristics of the pulse control power supply 12, and uses a synchronous linkage controller 19 to control the rotation position of the magnetron 13 and the discharge parameters of the pulse in the pulse control power supply 12 in a coordinated manner. When the magnetron 13 rotates to different positions, the synchronous linkage controller 19 can control the pulse control power supply 12 to output pulses with discharge parameters corresponding to the current position. Since the plasma is mainly confined below the target by the magnetron 13, and the discharge parameters of the pulse used by the pulse control power supply 12 can be independently controlled when the magnetron 13 rotates to different positions, plasmas with different plasma densities and ion energies are provided to different positions below the target. When process optimization is required, when the magnetron 13 rotates to a specific position above the microstructure on the wafer surface, the discharge parameters of the pulse used by the independently controlled pulse control power supply when the magnetron 13 moves to the specific position of the target can be controlled to control the step coverage at that specific position. At the same time, for different positions on the wafer surface, since the process optimization requirements for plasma density and ion energy are different at different positions, the discharge parameters of the pulse used by the independently controlled pulse control power supply 12 when the magnetron 13 moves to different positions of the target can be controlled to ensure that the thin film deposition and via filling effect are consistent at different positions, thereby achieving both excellent step coverage and uniformity of thin film deposition and via filling effect.

[0099] It should be noted that when using the physical vapor deposition equipment provided in this embodiment, relevant parameters need to be adjusted and applied in the process flow. When the magnetron 13 is rotated to different positions in the target placement area 11 by the synchronous linkage controller 19, the discharge parameters of the pulse control power supply 12 can be specifically set according to the different process optimization requirements for plasma density and ion energy at different positions. In one possible implementation, for different process scenarios:

[0100] by Figure 1 and Figure 2 The accompanying drawings are provided as examples, and the working principle of the physical vapor deposition equipment provided in this embodiment is explained in conjunction with specific process scenarios.

[0101] In this embodiment, the physical vapor deposition equipment described above is used to perform the required process development on wafers with microstructures (hereinafter, wafers refer to wafers with microstructures). These wafers have vertically upward vias or horizontal trenches for interconnection. The requirement is to ensure that these wafers have better step coverage while achieving better uniformity throughout the wafer.

[0102] In the process development, conventional process parameters are first applied. A target is placed in the target placement area 11, and a magnetron 13 is positioned on the back of the target. A drive unit 14 (using a programmable motion motor) drives the magnetron 13 to perform periodic scanning across the entire back of the target. The scanning trajectory of the magnetron 13 is set according to the process uniformity requirements and to ensure the uniformity of the target corrosion morphology. The scanning is controlled through the air inlet (…). Figure 1 (Not shown in the image) Gas flow is performed according to the set gas flow parameters, such as process gas Ar; the pulse control power supply 12 adopts a Bipolar-HiPIMS power supply, and the process discharge parameters of the Bipolar-HiPIMS power supply are set based on the constant voltage mode, setting the negative pulse voltage amplitude 121, negative pulse pulse width 122, frequency, positive pulse voltage amplitude 124, and positive pulse pulse width 125. The above parameters can be set or turned off according to process requirements; the target material generates glow under the high voltage applied by the negative pulse, ionizing the process gas to generate high-density plasma. According to process requirements, the Bipolar-HiPIMS power supply can also be controlled based on constant power mode or constant current mode. The wafer is placed on the chuck 15, and the output power of the first RF power supply 161 is set. The first RF power supply 161 is connected to the chuck 15 through the capacitive coupling circuit 17 to supply power to the wafer, making the wafer negative DC biased, accelerating ion bombardment of the wafer.

[0103] Based on the process specifications, the above-mentioned discharge parameters are set in separate process steps to achieve thin film deposition or via filling on the wafer microstructure. Process specifications typically include:

[0104] Specify thickness, thickness non-uniformity, or use sheet resistance, sheet resistance non-uniformity; specifying thickness or sheet resistance can characterize the film thickness deposited on the wafer.

[0105] And the etching rate, etching rate non-uniformity or anti-sputtering coefficient, and anti-sputtering coefficient non-uniformity resulting from the application of wafer bias voltage; the etching rate or anti-sputtering coefficient can characterize the etching or anti-sputtering effect generated by ions during the deposition process on the wafer. This index can affect the bottom etching effect (high etching rate, strong etching effect) or sidewall thickness (high anti-sputtering coefficient, strong anti-sputtering effect, and increased sidewall coverage thickness) of the vias in the wafer to a certain extent.

[0106] Therefore, process development will focus on the specified thickness and thickness non-uniformity; sheet resistance and etching rate non-uniformity; etching rate and etching rate non-uniformity; and anti-sputtering coefficient and anti-sputtering coefficient non-uniformity.

[0107] To meet the above specifications, various adjustable process parameters will be optimized, typically including gas flow, magnetron 13 height, magnetron 13 rotation trajectory, target-substrate distance, target discharge parameters (i.e., parameters of the Bipolar-HiPIMS power supply), wafer bias RF power, and, in the cavity 10 design, optional hardware options include placing an electromagnetic coil or permanent magnet around the cavity 10. Figure 1 (Not shown in the image) A magnetic field is generated to confine ion transport and optimize process results. However, inevitably, due to mechanical motion, structural constraints, gas flow, and local imbalances in magnetic field or electric field distribution, plasma density inhomogeneity will occur, leading to differences in thin film deposition and via filling effects across the wafer. This manifests as radial and circumferential inhomogeneities on the wafer, resulting in poor (high) thickness nonuniformity or etching rate nonuniformity, as well as poor (high) etching rate nonuniformity or anti-sputtering coefficient nonuniformity. Alternatively, in process parameter tuning, inevitably, the optimal specified thickness, thickness nonuniformity, sheet resistance, and sheet resistance nonuniformity index windows under process parameter settings are inconsistent with the optimal etching rate, etching rate nonuniformity, and anti-sputtering coefficient nonuniformity index windows. This necessitates additional solutions for further effective control of local plasma density (which can affect specified thickness, thickness non-uniformity; sheet resistance, etching rate non-uniformity) and ion energy (which can affect etching rate, etching rate non-uniformity; anti-sputtering coefficient, anti-sputtering coefficient non-uniformity) at different locations on the wafer.

[0108] To address the aforementioned issues, in this embodiment, a synchronous linkage controller 19 connects the Bipolar-HiPIMS power supply and the drive unit 14, enabling programmed output of the rotational position of the magnetron 13 and the Bipolar-HiPIMS power supply waveform settings in a sequential manner. Furthermore, due to the low-frequency, pulsed, intermittent discharge characteristics of HiPIMS, combined with the motion control of the magnetron 13, the discharge parameters of the Bipolar-HiPIMS power supply can be independently controlled when the magnetron 13 moves to different positions on the target material. When process optimization is required, different discharge parameters can be set for the pulse control power supply 12 at different positions of the magnetron 13 to effectively regulate local plasma density and ion energy, thereby achieving precise local control at different wafer locations.

[0109] (1) For scenarios where the non-uniformity of etching rate or the non-uniformity of anti-spatter coefficient is high due to the low local etching rate or anti-spatter coefficient of the wafer: the motion trajectory of the magnetron 13 is divided into segments or groups into points. When the programmed magnetron 13 trajectory sweeps through the area with the low local etching rate or anti-spatter coefficient of the wafer (wherein, the specific location of the area with the low local etching rate or anti-spatter coefficient of the wafer is determined by measuring the wafer surface before optimization; during the movement of the magnetron 13, the synchronous linkage controller 19 can calculate the components of the two pre-stored directions of the magnetron 13 by the current rotation radius r and rotation angle θ of the transmission structure in the drive component 14 to determine the rotation of the magnetron 13). The coordinates of the current position of the magnetron (r×cosθ, r×sinθ) are used to determine whether the magnetron 13 has rotated to the target area. Based on the Bipolar-HiPIMS power supply discharge parameters set by the process, in this area, the positive pulse voltage amplitude 124 and the positive pulse width 125 are increased according to process requirements. This allows ions to be accelerated under the influence of higher and wider positive pulses during the discharge process when the magnetron 13 sweeps through this area, obtaining higher energy to bombard the wafer. This increases the local etching rate or anti-sputtering coefficient, thereby optimizing the etching rate non-uniformity or anti-sputtering coefficient non-uniformity, which measures the uniformity of thin film deposition and via filling effects.

[0110] (2) For scenarios where the non-uniformity of etching rate or the non-uniformity of the non-spatial coefficient is high due to the high local etching rate or the high anti-spatial coefficient of the wafer, the movement trajectory of the magnetron 13 can be segmented or grouped into a matrix. When the programmed magnetron 13 trajectory sweeps through the area with the high local etching rate or the high anti-spatial coefficient of the wafer, based on the discharge parameters of the Bipolar-HiPIMS power supply set in the process, the positive pulse voltage amplitude 124 and the positive pulse width 125 can be reduced in this area according to the process requirements. This will result in the ions being accelerated to obtain lower energy to bombard the wafer under the influence of lower and shorter positive pulses during the discharge process when the magnetron 13 sweeps through this area, thereby reducing the local etching rate or the non-spatial coefficient, and thus optimizing the non-uniformity of etching rate or the non-uniformity of the non-spatial coefficient.

[0111] (3) For scenarios where thickness nonuniformity and etching rate nonuniformity are high due to low specified thickness or high sheet resistance in a local area of ​​the wafer (the values ​​of specified thickness and sheet resistance usually show opposite trends, with higher specified thickness usually having lower sheet resistance), the movement trajectory of the magnetron 13 can be segmented or grouped into a matrix. When the programmed magnetron 13 trajectory sweeps through the local area of ​​low specified thickness or high sheet resistance of the wafer, based on the Bipolar-HiPIMS power supply discharge parameters set by the process, the negative pulse voltage amplitude 121 can be increased in this area according to process requirements to increase the bombardment of ions on the target material and obtain a higher plasma density. This will enhance the discharge intensity during the discharge process when the magnetron 13 sweeps through this area, thereby increasing the local specified thickness or reducing the local sheet resistance, and thus optimizing the thickness nonuniformity or etching rate nonuniformity.

[0112] (4) For scenarios where the thickness non-uniformity and etching rate non-uniformity are high due to the high specified thickness or low sheet resistance in a local area of ​​the wafer (the specified thickness and sheet resistance values ​​usually show opposite trends, with higher specified thickness usually having lower sheet resistance), the movement trajectory of the magnetron 13 can be segmented or grouped into a matrix. When the programmed magnetron 13 trajectory sweeps through the area of ​​the wafer with a high specified thickness or low sheet resistance, the negative pulse voltage amplitude 121 can be reduced in this area according to the process requirements based on the Bipolar-HiPIMS power supply discharge parameters set by the process, thereby reducing the bombardment of the target material by ions and obtaining a lower plasma density. This reduces the discharge intensity during the discharge process when the magnetron 13 sweeps through this area, thereby reducing the specified thickness or increasing the sheet resistance in this area, and thus optimizing the thickness non-uniformity or etching rate non-uniformity.

[0113] Example 2

[0114] Unlike Embodiment 1, this embodiment further defines the power supply method of the chuck 15 in terms of the cavity 10 configuration. The rest has been described in detail in Embodiment 1 and will not be repeated here.

[0115] Based on the above embodiments, please refer to Figure 3 , Figure 3 The second physical vapor deposition apparatus provided in this application embodiment may further include a capacitive coupling circuit 17, one end of which is connected to the chuck 15, and the other end is used for grounding or levitation.

[0116] It should be noted that, in this embodiment, since the process does not require strong ion bombardment of the wafer, or the positive pulse of the pulse control power supply 12 itself provides effective ion bombardment, the chuck 15 may not be connected to the first radio frequency power supply, and may be kept floating or directly grounded through the capacitive coupling circuit 17, thereby simplifying the structure.

[0117] Example 3

[0118] Unlike Embodiment 1, this embodiment further adds a second radio frequency power supply 162 and a coil 18 to the cavity 10 configuration. The rest has been described in detail in Embodiment 1 and will not be repeated here.

[0119] Based on the above embodiments, please refer to Figure 4 , Figure 4 The third physical vapor deposition apparatus provided in this application embodiment may further include: a second radio frequency power supply 162 and at least one-turn coil 18; the coil 18 is connected to the second radio frequency power supply 162; the coil 18 is located between the target placement area 11 and the chuck 15 and is arranged along the circumferential direction of the cavity 10.

[0120] It should be noted that, in this embodiment, if the process requires further improvement in ionization rate or the introduction of more gas ions from an additional ion source, a coil 18 can be placed between the target placement area 11 and the wafer, and the coil 18 can be connected to the second radio frequency power supply 162. By powering the coil 18 through the second radio frequency power supply 162, inductively coupled plasma discharge can be generated as an additional ionization source, which can effectively increase the plasma density reaching the wafer.

[0121] This embodiment does not limit the specific number of turns of coil 18. For example, coil 18 can be a single turn or multiple turns.

[0122] This embodiment does not limit the specific location of the coil 18. For example, the coil 18 can be placed inside the cavity 10 or outside the cavity 10.

[0123] This embodiment does not limit the specific arrangement of the coil 18. It can be fixedly or movably connected to a certain position in the physical vapor deposition equipment, such as the wall of the cavity 10.

[0124] Example 4

[0125] Unlike Embodiment 1, this embodiment further adds a collimator 20 to the cavity 10 configuration. The rest of the contents have been described in detail in Embodiment 1 and will not be repeated here.

[0126] Based on the above embodiments, please refer to Figure 5 , Figure 5 The fourth physical vapor deposition apparatus provided in this application embodiment may further include: a collimator 20; the collimator 20 is located between the target placement area 11 and the chuck 15; the collimator 20 includes a plurality of through holes; the extension direction of the through holes is perpendicular to the chuck 15.

[0127] It should be noted that, in this embodiment, due to the process requirement to move ions toward the wafer, a collimator 20 with vertical through holes can be applied between the target placement area 11 and the wafer to collimate the ions.

[0128] It should be noted that the through holes in this embodiment can be arranged in a honeycomb pattern on a plane parallel to the target placement area 11, which can collimate the ions generated at each position in the target placement area 1.

[0129] This embodiment does not limit the specific length of each through hole. For example, the length of each through hole can be the same or different. For example, the length of each through hole in the middle area is the same, and the length of the through holes in the edge area decreases sequentially in the direction away from the middle area.

[0130] This embodiment does not limit the specific arrangement of the collimator 20. It can be fixedly or movably connected to a certain position in the physical vapor deposition apparatus, such as the wall of the cavity 10. Preferably, the collimator 20 may include a main body 201 and a connecting part 202; the main body 201 includes a plurality of through holes arranged in a honeycomb pattern; the connecting part 202 is connected to the edge of the main body 201 and extends in a direction away from the edge of the main body 201; the side of the connecting part 202 away from the main body 201 is connected to the cavity 10 through an insulating device.

[0131] Furthermore, the physical vapor deposition apparatus in this embodiment may also include: a DC power supply (not shown in the figure); the DC power supply is connected to the collimator 20 and applies a positive bias voltage to the collimator 20.

[0132] It should be noted that, in this embodiment, the collimator 20 can be connected to a DC power supply as needed to apply a positive bias voltage to the collimator 20, so that the sidewall of the through hole in the collimator 20 can repel ions and not easily adhere to the sidewall, thus making it easier for ions to pass through the through hole.

[0133] Example 5

[0134] Based on the above embodiments, please refer to Figure 6 , Figure 6 A flowchart of a physical vapor deposition method provided in this application embodiment, the method may include:

[0135] S101: Get the current position of the magnetron.

[0136] It should be noted that in this embodiment, during the process of the driving component driving the magnetron to rotate in the target placement area, the synchronous linkage controller can obtain the position of the magnetron in real time, or indirectly obtain the position of the magnetron in real time through the host computer.

[0137] This embodiment does not limit the specific method for determining the current position. The appropriate method can be selected based on the specific type of driving component. For example, when the driving component includes a transmission structure and a motor, the mechanical parameters of the driving component can include the rotation radius and rotation angle of the transmission structure. Correspondingly, the coordinates of the magnetron's current rotation position can be determined by calculating the pre-stored components in two directions using the current rotation radius and rotation angle of the transmission structure in the driving component. It should be noted that this embodiment uses the rotation radius and rotation angle of the transmission structure in the driving component to determine the coordinates of the magnetron's current position, which allows for simple and accurate positioning of the magnetron's current position.

[0138] In one possible implementation, the coordinates may include an abscissa and a ordinate, where the rotation center of the transmission structure is set as... The initial rotation position is Furthermore, when rotating counterclockwise, the formula for calculating the x-coordinate can be:

[0139] ;

[0140] The formula for calculating the ordinate is:

[0141] ;

[0142] In the formula, Represents the x-axis; Represents the ordinate; Indicates the radius of rotation; Indicates the rotation angle.

[0143] It should be noted that this embodiment uses trigonometric functions to convert the rotation radius and rotation angle of the transmission structure into position coordinates, thereby achieving accurate calculation of the current position of the magnetron.

[0144] In one possible implementation, when the synchronous linkage controller includes a memory and a processor, the processor can execute the determination of the coordinates of the current position of the magnetron rotation based on the current rotation radius and rotation angle of the transmission structure in the drive unit.

[0145] S102: Control pulse controls the power supply output of a pulse with discharge parameters corresponding to the current position.

[0146] It should be noted that in this embodiment, when the driving component drives the magnetron to rotate to any position in the target placement area, the synchronous linkage controller can control the pulse control power supply to output a pulse with discharge parameters corresponding to the current position.

[0147] This embodiment does not limit the specific control method of the synchronous linkage controller, as long as the driving components and the pulse control power supply can operate synchronously. For example, it may include:

[0148] The discharge parameters of the pulse corresponding to the current position are determined from the mapping relationship between the discharge parameters of the pulse and the current position.

[0149] The discharge parameters corresponding to the current position are sent to the pulse control power supply, so that the pulse control power supply outputs a pulse with the discharge parameters corresponding to the current position.

[0150] In one possible implementation, when the synchronous linkage controller includes a memory and a processor, the mapping relationship between the discharge parameters of the pulse and the current position can be stored in the memory, and the processor can retrieve the mapping relationship between the discharge parameters of the pulse and the current position from the memory and execute the above steps.

[0151] This embodiment does not limit the specific type of mapping relationship between the discharge parameters of the pulse and the current position. Please refer to Embodiment 1 for details, which will not be repeated here.

[0152] It should be noted that this embodiment utilizes the mapping relationship between the discharge parameters of the pulse and the current position to directly determine and output the corresponding discharge parameters, thus achieving precise matching between the discharge parameters and the current position.

[0153] In one possible implementation, the discharge parameters of this embodiment may include negative pulse parameters and positive pulse parameters. Specific types can be found in Embodiment 1, and will not be repeated here. It should be noted that in this embodiment, the plasma density can be controlled by the negative pulse parameters, and the ion energy can be controlled by the positive pulse parameters. Controlling the pulse control power supply to output a pulse with discharge parameters corresponding to the current position allows the target placement area to generate plasma with plasma density and ion energy corresponding to the current position, thereby bombarding the wafer and forming a film layer on the wafer surface.

[0154] Based on the above embodiments, this embodiment adopts the above physical vapor deposition method, based on the characteristics of the low frequency and pulsed intermittent discharge of the pulsed control power supply, and controls the linkage between the rotation position of the magnetron and the discharge parameters of the pulses in the pulsed control power supply; when the magnetron rotates to different positions, the current position can be obtained, and the pulsed control power supply is controlled to output pulses with discharge parameters corresponding to the current position; since the plasma is confined by the magnetron below the target, and when the magnetron rotates to different positions, the discharge parameters of the pulses adopted by the pulsed control power supply can be independently controlled, so as to provide plasmas with different plasma densities and ion energies at different positions below the target; when process optimization is required, when the magnetron rotates above a specific position where the microstructures on the wafer surface are located, by independently controlling the discharge parameters of the pulses adopted by the pulsed control power supply when the magnetron moves to a specific position of the target, the step coverage rate at the specific position can be controlled; at the same time, for different positions on the wafer surface, due to the different process optimization requirements for the plasma density and ion energy of the plasma at different positions, by independently controlling the discharge parameters of the pulses adopted by the pulsed control power supply when the magnetron moves to different positions of the target, the film deposition and via filling effects at different positions are ensured to be consistent, so as to achieve both excellent step coverage rate and uniformity of film deposition and via filling effects at the same time.

[0155] Embodiment Six

[0156] Based on the above embodiments, please refer to Figure 7 , Figure 7 which is the architecture diagram of a synchronous linkage controller provided by an embodiment of the present application. The synchronous linkage controller may include:

[0157] A position acquisition module, configured to acquire the current position of the magnetron;

[0158] A pulse control module, configured to control the pulsed control power supply to output pulses with discharge parameters corresponding to the current position.

[0159] Based on the above embodiments, this application employs the aforementioned synchronous linkage controller. Based on the low frequency and pulsed interval discharge characteristics of the pulse control power supply, the synchronous linkage controller performs linkage control between the magnetron rotation position and the discharge parameters of the pulses in the pulse control power supply. When the magnetron rotates to different positions, the position acquisition module can acquire the current position, and the pulse control module controls the pulse control power supply to output pulses with discharge parameters corresponding to the current position. Since the plasma is confined below the target material by the magnetron, and the discharge parameters of the pulses used by the pulse control power supply can be independently controlled when the magnetron rotates to different positions, plasmas with different plasma densities and ion energies are provided to different positions below the target material. When process optimization is required, the pulse control module independently controls the discharge parameters of the pulse control power supply when the magnetron rotates to a specific position above the microstructure on the wafer surface. This allows for control of the step coverage at that specific position. Furthermore, for different positions on the wafer surface, where the requirements for plasma density and ion energy for process optimization vary, the pulse control module independently controls the discharge parameters of the pulse control power supply when the magnetron moves to different positions on the target. This ensures consistent thin film deposition and via filling effects at different positions, achieving both excellent step coverage and uniformity in thin film deposition and via filling.

[0160] Based on the above embodiments, the discharge parameters include at least one of negative pulse parameters, positive pulse parameters, pulse period, and duty cycle;

[0161] Negative pulse parameters include negative pulse voltage amplitude and / or negative pulse width; positive pulse parameters include positive pulse voltage amplitude and / or positive pulse width.

[0162] Based on the above embodiments, the pulse control module may include:

[0163] The data acquisition unit is used to determine the discharge parameters of the pulse corresponding to the current position from the mapping relationship between the discharge parameters of the pulse and the current position;

[0164] The pulse control unit is used to send the discharge parameters corresponding to the current position to the pulse control power supply, so that the pulse control power supply outputs a pulse with the discharge parameters corresponding to the current position.

[0165] Based on the above embodiments, the mapping relationship between discharge parameters and current position includes a mapping table between discharge parameters and current position, a mapping curve between discharge parameters and current position, or a mapping function between discharge parameters and current position.

[0166] Based on the above embodiments, the location acquisition module may include:

[0167] The coordinates of the current position of the magnetron rotation are determined by calculating the pre-stored components in two directions based on the current rotation radius and rotation angle of the transmission structure in the drive component.

[0168] Based on the above embodiments, the coordinates may include an abscissa and a ordinate, and the formula for calculating the abscissa can be:

[0169] ;

[0170] The formula for calculating the ordinate is:

[0171] ;

[0172] In the formula, Represents the x-axis; Represents the ordinate; Indicates the radius of rotation; Indicates the rotation angle.

[0173] The above-described preferred embodiments have further illustrated the purpose, technical solutions, and advantages of the present invention. It should be understood that the above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A physical vapor deposition apparatus, characterized in that, include: The device includes a cavity, chuck, magnetron, drive unit, pulse control power supply, and synchronous linkage controller, and the physical vapor deposition equipment is provided with a target placement area for mounting the target material. The chuck is located inside the cavity; the target placement area is located at the top of the cavity; The pulse control power supply is used to connect to the target material; the magnetron is connected to the driving component; both the pulse control power supply and the driving component are connected to the synchronous linkage controller. The synchronous linkage controller is used to control the pulse control power supply to output a pulse with discharge parameters corresponding to the current position of the magnetron.

2. The physical vapor deposition apparatus according to claim 1, characterized in that, It also includes a capacitive coupling circuit; one end of the capacitive coupling circuit is connected to the chuck, and the other end is connected to the first radio frequency power supply, ground, or floating.

3. The physical vapor deposition apparatus according to claim 1 or 2, characterized in that, It also includes a collimator and a DC power supply; the collimator is located between the target placement area and the chuck; the collimator includes a plurality of through holes; the extension direction of the through holes is perpendicular to the chuck; the DC power supply is connected to the collimator and applies a positive bias voltage to the collimator.

4. A physical vapor deposition method, characterized in that, include: Get the current position of the magnetron; The control pulse controls the power supply to output a pulse with discharge parameters corresponding to the current position.

5. The physical vapor deposition method according to claim 4, characterized in that, The discharge parameters include at least one of negative pulse parameters, positive pulse parameters, pulse period, and duty cycle; The negative pulse parameters include the negative pulse voltage amplitude and / or the negative pulse width; The positive pulse parameters include the positive pulse voltage amplitude and / or the positive pulse width.

6. The physical vapor deposition method according to claim 4 or 5, characterized in that, The control pulse controls the power supply to output a pulse with discharge parameters corresponding to the current position, including: The discharge parameters of the pulse corresponding to the current position are determined from the mapping relationship between the discharge parameters of the pulse and the current position; The discharge parameters corresponding to the current position are sent to the pulse control power supply, so that the pulse control power supply outputs a pulse with the discharge parameters corresponding to the current position.

7. The physical vapor deposition method according to claim 6, characterized in that, The mapping relationship between the discharge parameters and the current position includes a mapping table between discharge parameters and the current position, a mapping curve between discharge parameters and the current position, or a mapping function between discharge parameters and the current position.

8. The physical vapor deposition method according to claim 4 or 5, characterized in that, The process of obtaining the current position of the magnetron includes: The coordinates of the current position of the magnetron rotation are determined by calculating the pre-stored components in two directions based on the current rotation radius and rotation angle of the transmission structure in the drive component.

9. The physical vapor deposition method according to claim 8, characterized in that, The coordinates include an abscissa and a ordinate, and the formula for calculating the abscissa is: ； The formula for calculating the ordinate is: ； In the formula, Represents the x-coordinate; Represents the ordinate; Indicates the radius of rotation; This indicates the rotation angle.

10. A synchronous linkage controller, characterized in that, include: The position acquisition module is used to acquire the current position of the magnetron; A pulse control module is used to control the pulse control power supply to output pulses with discharge parameters corresponding to the current position.

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