Cmos device and method of manufacturing the same

Abstract

The application provides a CMOS device and a preparation method thereof, the CMOS device comprising a GaN HEMT device and a diamond PMOS device arranged in a vertical direction, and an isolation layer arranged between the GaN HEMT device and the diamond PMOS device; the GaN HEMT device comprising a GaN layer, an AlGaN layer, a first source, a first gate and a first drain, the diamond PMOS device comprising a hydrogen-terminated diamond layer, a second source, a second drain and a second gate; the first gate and the second gate are arranged in correspondence in the vertical direction and are electrically connected through a first metal filling hole extending in the vertical direction; the first drain and the second drain are arranged in correspondence in the vertical direction and are electrically connected through a second metal filling hole extending in the vertical direction. The COMS device provided by the application has high carrier mobility, low power consumption and high heat dissipation performance, and can reduce parasitic resistance, parasitic capacitance and parasitic inductance, and improve integration density.

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