Superlens and method for manufacturing the same
CN122301121APending Publication Date: 2026-06-30CSMC TECH FAB2 CO LTD
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Patent Information
- Application Number
- CN202411975913.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-30
- Publication Date
- 2026-06-30
AI Technical Summary
Technical Problem
In the manufacturing of superlenses, the cylindrical oxide layer is prone to forming a "mushroom head" morphology, which affects the silicon pillar morphology and leads to product scrap.
Method used
A bubble-generating agent, such as oxalic acid, is added to the phosphoric acid etching solution for wet etching of silicon nitride layers. This generates bubbles to promote solution turbulence, prevents the aggregation of etching byproducts, and controls the precipitation phenomenon at the ends of hard mask materials.
Benefits of technology
It effectively controlled the morphology of the hard mask material, avoided the "mushroom head" phenomenon, improved product yield and mass production efficiency, and ensured the good morphology of the silicon pillar.
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Smart Images
Figure CN122301121A_ABST
Abstract
This invention relates to a superlens and its manufacturing method. The method includes: obtaining a wafer; the wafer comprising a substrate, a target layer on the substrate, a silicon nitride layer with openings in the target layer, and a hard mask material filling the openings; removing the silicon nitride layer by wet etching with an etchant under target heating conditions, the etchant being phosphoric acid with added bubble-generating agent, the bubble-generating agent decomposing to generate bubbles under the target heating conditions; and etching the target layer using the hard mask material as an etching mask to form multiple columnar microstructures. This invention adds a bubble-generating agent that decomposes upon heating to the phosphoric acid used for wet etching of the silicon nitride layer. The bubbles create turbulence in the etchant, promoting mass transfer and preventing the aggregation of silicate etching byproducts, effectively controlling the precipitation at the ends of the hard mask material, thereby obtaining a good columnar microstructure morphology.
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