LDO circuit with improved loop stability
By setting a buffer stage and an internal ESR compensation module in the LDO circuit, the gate impedance of the power transistor is dynamically adjusted, solving the problem of loop instability under high load current and achieving stability and output voltage accuracy across the entire load range.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2026-02-26
- Publication Date
- 2026-07-10
AI Technical Summary
Under high load current conditions, the loop stability of existing LDO circuits is affected by changes in parasitic capacitance and ESR resistance. Traditional compensation methods are difficult to control accurately, resulting in output voltage fluctuations and loop instability.
A buffer stage is set between the error amplifier and the gate of the power transistor, and an internal ESR compensation module is used to generate a zero point. The secondary pole is canceled by negative feedback, and the gate impedance of the power transistor is dynamically adjusted according to the load current using an adaptive load.
It achieves improved loop stability across the entire load range, reduces component specification limitations, improves output voltage accuracy, avoids DC offset, and enhances circuit stability.
Smart Images

Figure CN122363443A_ABST