Metal mesh touch screen and manufacturing process thereof
By aging the ITO film and optimizing the fabrication process by combining magnetron sputtering with laser direct writing or photolithography, the problems of dimensional instability, poor adhesion, and electrostatic breakage in metal mesh touchscreens have been solved, resulting in a high-transmittance, low-resistance metal mesh touchscreen that improves product yield and reliability.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- JIANGXI ZHUOXUN MICROELECTRONICS CO LTD
- Filing Date
- 2026-06-12
- Publication Date
- 2026-07-10
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Abstract
Description
Technical Field
[0001] This invention belongs to the technical field of touch screen manufacturing, specifically relating to a metal mesh touch screen and its manufacturing process. Background Technology
[0002] Metal mesh capacitive touch technology involves densely weaving conductive metals such as copper and silver, along with their oxides, onto a transparent substrate like PET to form a regularly shaped mesh pattern. This allows for signal transmission through touch sensing. Essentially, the metal mesh is a transparent conductive electrode (TCE) used to replace traditional indium tin oxide (ITO) transparent conductive films.
[0003] In existing technologies, the manufacturing process of metal mesh touch screens suffers from several problems: insufficient aging of the ITO film leads to dimensional instability, which can cause subsequent alignment deviations; unreasonable magnetron sputtering parameters make it difficult to balance light transmission and conductivity of the metal layer; insufficient precision in laser direct writing or photolithography can easily result in defects in narrow wiring; poor adhesion between the metal mesh and the substrate makes it prone to detachment when bent; weak oxidation resistance of the copper mesh; high electrostatic breakage rate of silver wiring; and a lack of effective electrical testing methods, resulting in low yield and poor reliability. Summary of the Invention
[0004] To address the aforementioned technical problems, this invention provides a metal mesh touchscreen and its manufacturing process, thereby overcoming the shortcomings of the prior art.
[0005] In a first aspect, the present invention provides a manufacturing process for a metal mesh touchscreen, characterized in that the manufacturing process includes: An aging process is performed on an ITO film on a flexible transparent substrate, followed by a coating crystallization process on the ITO film. An upper electrode and a lower electrode are respectively disposed on the upper and lower surfaces of the ITO film to form an ITO channel, and the ITO channel is divided into several tiny cells. A metal conductive layer is formed by depositing a metal thin film on the surface of the aging-treated flexible transparent substrate by magnetron sputtering, and then patterning the metal conductive layer by laser direct writing or a combination of photolithography and etching to form a grid pattern to obtain a metal grid conductive layer. The metal mesh conductive layer is embedded in the upper surface of the flexible transparent substrate, and the metal mesh conductive layer is flush with the upper surface of the flexible substrate; An insulating layer and a protective layer are sequentially plated onto the conductive layer of the metal mesh to obtain a semi-finished metal mesh touch screen, and silver wiring is printed on the semi-finished metal mesh touch screen.
[0006] Compared with the prior art, the beneficial effects of the present invention are: stabilizing the size through ITO film aging treatment and optimizing the formation of a high-transmittance, low-resistance metal layer by magnetron sputtering; obtaining the grid pattern by laser direct writing or photolithography and embedding it into the substrate to achieve a flush structure, thereby enhancing adhesion and bending stability; improving the oxidation resistance of the copper grid through a protective layer; and effectively suppressing electrostatic breakage by using printed silver wiring and high-current detection, thereby significantly improving product yield and reliability.
[0007] Furthermore, the aging treatment temperature is 150℃~180℃.
[0008] Furthermore, the metal material used in the magnetron sputtering is aluminum, the magnetron sputtering time is 6 to 7 minutes, the magnetron sputtering power is 5% to 20%, and the vacuum degree of the magnetron sputtering is 3.6 × 10⁻⁶. - ³Pa.
[0009] Furthermore, the metal mesh conductive layer obtained by laser direct writing etching has a linewidth of 5μm to 6μm and a side length of 25μm to 100μm, which is a regular hexagonal aluminum mesh.
[0010] Furthermore, the metal mesh conductive layer is embedded in the flexible transparent substrate by photolithography combined with electrochemical deposition, and the deposition time is 80s to 120s.
[0011] Furthermore, the insulating layer is obtained by printing with insulating ink, and the emulsion thickness of the printing screen for printing the insulating ink is 8μm to 10μm.
[0012] Furthermore, the preparation of the protective layer includes immersing a copper mesh film in a coating solution containing SnF2 for coating, so as to generate a SnO2-containing protective layer on the surface of the copper mesh film, wherein the coating time is 0.5h to 2h.
[0013] Furthermore, silver ink containing flake silver powder is used for silver wiring printing, wherein the antistatic capacity of the flake silver powder is 20kV~30kV.
[0014] Furthermore, after the step of printing silver wiring on the semi-finished metal mesh touchscreen, the method further includes: The stability of the silver wiring was tested using a high-voltage testing device.
[0015] Secondly, the present invention also provides a metal mesh touchscreen, which is prepared by the above-described metal mesh touchscreen manufacturing process, comprising: A flexible transparent substrate, wherein an ITO film is disposed on the flexible transparent substrate, and an upper electrode and a lower electrode are respectively disposed on the upper and lower surfaces of the ITO film; A metal mesh conductive layer is disposed on the upper surface of the flexible transparent substrate. The metal mesh conductive layer is a mesh pattern formed by several metal wires intersecting and connecting with each other. The mesh pattern includes several periodically arranged closed mesh units. An insulating layer and a protective layer are sequentially disposed on the upper surface of the metal mesh conductive layer; The metal wire has a linewidth of 5μm to 30μm, the line spacing between adjacent metal wires is 25μm to 400μm, the thickness of the metal mesh conductive layer is 40nm to 110nm, the transmittance of the metal mesh conductive layer at a wavelength of 550nm is greater than 70%, and the sheet resistance is less than 15Ω / sq. Detailed Implementation
[0016] Example 1 Embodiment 1 of the present invention provides a manufacturing process for a metal mesh touchscreen, the process steps of which include steps S1 to S5: S1, aging treatment is performed on the ITO film on the flexible transparent substrate, and coating crystallization is performed on the ITO film; It should be noted that a PET-based ITO film with a thickness of 125 μm (nominal sheet resistance of 150 Ω / sq) was selected and placed in an aging oven, where it was heated at 150℃ for 2 hours. Experimental method: The temperature uniformity inside the oven was monitored using a multi-point thermometer (±2℃). After treatment, the film was removed and allowed to cool naturally to room temperature.
[0017] S2, an upper electrode and a lower electrode are respectively disposed on the upper and lower surfaces of the ITO film to form an ITO channel, and the ITO channel is divided into several tiny cells; It should be noted that, after aging, upper and lower electrodes are screen-printed onto the upper and lower surfaces of the ITO film, respectively, to form ITO channels. The ITO channel pattern is then divided into several tiny cells (each cell corresponding to an actual area of 50μm × 50μm) using a graphic simulation method for subsequent electrical performance testing.
[0018] S3, deposit a metal thin film on the surface of the aging-treated flexible transparent substrate by magnetron sputtering to form a metal conductive layer, and then use laser direct writing or a combination of photolithography and etching to pattern the metal conductive layer so that the metal conductive layer forms a grid pattern to obtain a metal grid conductive layer. It should be noted that magnetron sputtering equipment was used, with metallic aluminum (99.9% purity) as the target material. The process parameters were: background vacuum 3.6 × 10⁻⁶. -The sputtering parameters were: ³Pa, sputtering power 15%, and sputtering time 6.5 min. Experimental procedure: The substrate was plasma-cleaned for 1 min before sputtering, and rotated at 10 rpm during sputtering to ensure uniformity. The film thickness was measured using a Bruker Dektak XT profilometer, yielding an average thickness of 45 nm. The root mean square roughness (RMS) of the surface was measured to be 4.2 nm using an atomic force microscope (AFM, Bruker Dimension Icon) scanning over a 3 μm × 3 μm area. In addition, nanosecond laser direct writing equipment (wavelength 355nm, pulse width 10ns) was used to etch aluminum thin films. Laser parameters: scanning speed 200mm / s, defocusing amount +0.1mm, laser power 1.5W. A regular hexagonal grid pattern was etched, with design parameters: line width 5.5μm, side length 100μm. Experimental methods: After etching, the grid morphology was observed using a scanning electron microscope (SEM, Zeiss MERLIN Compact), and the line width and side length were measured; transmittance was tested using a UV-Vis spectrophotometer in the wavelength range of 300nm–800nm; sheet resistance was measured using a four-probe sheet resistance meter, with measurements taken at 5 different locations for each sample and the average value taken. Test results: at a wavelength of 550nm, the transmittance was 74.3%, and the sheet resistance was 14.7Ω / sq.
[0019] S4, embed the metal mesh conductive layer into the upper surface of the flexible transparent substrate, and make the metal mesh conductive layer flush with the upper surface of the flexible substrate; It should be noted that the metal mesh was embedded into a flexible transparent substrate using a combination of photolithography and electrochemical deposition. The specific experimental method was as follows: A polyvinylidene fluoride (PVDF) solution (PVDF and N,N-dimethylacetamide were prepared at a mass ratio of 1:10 and magnetically stirred at 35°C for 5 hours until completely dissolved) was spin-coated onto the patterned aluminum mesh surface. The spin-coating parameters were: 500 rpm for 15 seconds, then 2000 rpm for 30 seconds. After spin-coating, the mesh was cured in a 90°C oven for 20 minutes. Finally, the PVDF-coated metal mesh was mechanically peeled off from the glass carrier, allowing the metal mesh to be completely embedded in the PVDF substrate, with the upper surface of the metal mesh flush with the substrate surface. The electrochemical deposition parameters were: the electroplating solution was an HEDP system (25 g / L HEDP, 4 g / L Cu²⁺). + The deposition conditions were: 16 g / L K₂CO₃, pH 9.5, deposition time 110 s, and current density 1.5 A / dm². Experimental method: The embedding cross-section was observed using an optical microscope (Olympus BX51) to confirm the embedding depth and flatness.
[0020] S5, an insulating layer and a protective layer are sequentially plated on the conductive layer of the metal mesh to obtain a semi-finished metal mesh touch screen, and silver wiring is printed on the semi-finished metal mesh touch screen; It should be noted that an insulating layer and a protective layer were sequentially plated onto the embedded metal mesh surface. The insulating layer was formed by screen printing using UV-curable insulating ink (model LM-600DMN2), with a screen printing emulsion thickness of 9μm. After printing, it was cured using a UV curing machine with a UV light intensity of 1200mj / cm² (measured using a UV energy meter). The protective layer was grown using a self-assembly technique: a coating solution (SnF2 concentration 0.1mol / L, isopropanol to deionized water volume ratio 1:1) was prepared, and the copper mesh film was immersed in the coating solution for 1 hour. After removal, it was rinsed with deionized water and dried with N2. Experimental methods: X-ray photoelectron spectroscopy (XPS, Thermo Scientific K-Alpha) was used to analyze the surface composition to confirm the formation of the SnO2 protective layer; the thickness of the protective layer (approximately 20nm) was observed using SEM; and silver wiring was printed using silver ink (Toyobo DW-420L) containing flake silver powder. The flake silver powder has a particle size D50 of 2.0 μm and a D90 of 4.5 μm, and the silver ink viscosity is 30 ± 5 Pa·s. The printing screen linewidth / spacing is designed to be 30 μm / 30 μm, and the ink is UV cured after printing (1200 mj / cm²). Experimental methods: The printing quality of the silver wiring was inspected using an optical microscope, and the linewidth and spacing were measured. The antistatic ability of the silver ink was tested using an electrostatic generator. The applied voltage was gradually increased from 5 kV to 30 kV, and the critical voltage value at which the silver wiring ablated and broke was recorded. The measured antistatic ability was 25 kV. In addition, a high-voltage testing device was used to test the stability of the silver wiring. Specifically, a test current three times the operating current (approximately 10mA operating current, 30mA test current) was applied to the silver wiring for one second, while an infrared thermal imager (Fluke TiS60) was used to observe the temperature change of the silver wiring to detect any concave areas or excessively thin film thickness leading to localized overheating or wire breakage. Experimental method: 100% of each product was inspected, and the number of defective products was recorded.
[0021] The metal mesh touchscreen prepared in Embodiment 1 of the present invention includes a flexible transparent substrate, a metal mesh conductive layer, an insulating layer, and a protective layer. An ITO film is disposed on the flexible transparent substrate, and an upper electrode and a lower electrode are respectively disposed on the upper and lower surfaces of the ITO film. The metal mesh conductive layer is disposed on the upper surface of the flexible transparent substrate. The metal mesh conductive layer is a mesh pattern formed by several metal wires intersecting and connecting with each other. The mesh pattern includes several periodically arranged closed mesh units. The insulating layer and the protective layer are sequentially disposed on the upper surface of the metal mesh conductive layer.
[0022] It should be noted that the conductive metal mesh layer is specifically disposed on the upper surface of the ITO film, and there is an insulating ink layer between the conductive metal mesh layer and the ITO film. The insulating ink layer is 8μm thick. In the central visible area of the metal mesh touchscreen, only the ITO film is responsible for sensing touch. In the non-visible area at the edge of the screen, the metal mesh lines act as conductors, contacting the ITO film only at tiny openings in the insulating ink to transmit signals. In all other areas, the metal mesh lines and the ITO film are completely separated by the insulating ink and do not make direct contact.
[0023] Example 2 The difference between the second embodiment of the present invention and the first embodiment is that: ITO film aging treatment: The temperature was adjusted to 180℃, and the aging time was 1.5 hours. The experimental method was the same as in Example 1. After treatment, the shrinkage rate of the ITO film in the MD direction was measured by a two-dimensional measuring instrument to be 0.02% (0.03% when aging at 150℃). Magnetron sputtering: sputtering power 20%, sputtering time 6 min. The aluminum film thickness was measured to be 40 nm, and the RMS measured by AFM was 3.8 nm. Laser direct writing etching: 50μm side length and 5μm linewidth of hexagonal aluminum mesh. SEM confirmed linewidth uniformity. Transmittance test: 58.1% transmittance at 550nm wavelength (n=10, standard deviation 0.2%); sheet resistance 11.3Ω / sq (n=10, standard deviation 0.1Ω / sq). Metal mesh embedding: electrochemical deposition time 100s; Insulation layer: Printed stencil emulsion thickness 8μm; Protective layer: SnO2 coating time 0.5 hours; Silver wiring: Flake silver powder and silver ink have an antistatic capacity of 20kV (measured critical ablation voltage).
[0024] Example 3 The difference between the third embodiment of this invention and the above embodiments is that the metal mesh material is copper, and the protective layer uses an electroplated nickel layer instead of the SnO2 self-assembled layer. Specific process parameters and experimental data: Magnetron sputtering: The target material was copper (99.9% purity), the sputtering power was 10%, and the sputtering time was 7 min. The copper film thickness was measured to be 50 nm, and the RMS measured by AFM was 4.5 nm. Laser direct writing etching: 25μm side length and 6μm line width of the regular hexagonal copper mesh. Transmittance test: 45.8% transmittance at 550nm wavelength (n=10, standard deviation 0.3%); sheet resistance 7.83Ω / sq (n=10, standard deviation 0.1Ω / sq).
[0025] Metal mesh embedding: electrochemical deposition time 120s; Protective layer preparation (nickel electroplating): Electroplating solution formulation: nickel sulfate hexahydrate 200 g / L, nickel chloride 40 g / L, boric acid 35 g / L, sodium saccharin 1 g / L, sodium dodecyl sulfate 0.1 g / L, pH 4.5. A copper mesh was used as the cathode, a phosphor bronze plate as the anode, the current density was 2 A / dm², and the electroplating time was 40 s. After electroplating, the plate was removed, rinsed with deionized water, and left to stand naturally in room temperature air for 24 hours to allow the nickel layer to oxidize and form a NiO protective layer. Experimental methods: The surface of the electroplated mesh was observed using SEM; the nickel layer thickness was approximately 30 nm. Surface composition was analyzed using XPS to confirm the formation of NiO. Insulation layer: Printing screen emulsion thickness 10μm, UV light intensity 1250mj / cm²; Silver wiring: Flake silver powder and silver ink have an antistatic capacity of 30kV.
[0026] Example 4 The specific process in the fourth embodiment of the present invention is as follows: ITO film aging treatment: Same as Example 1, 150℃ / 2h; Electrode setup: Upper and lower electrode patterns are simultaneously formed on the same ITO film using a photopolymerization process. Photopolymerization process parameters: Coating with photosensitive film (DFR), baking at 90℃ for 3 min, exposure for 45 s, development for 75 s, etching (hydrochloric acid), and stripping DFR; Magnetron sputtering and patterning: Same as Example 1 (aluminum mesh, side length 100μm, line width 5.5μm); Metal mesh embedding: Same as Example 1, deposition time 110s; Insulating ink printing: Process parameters: UV-curable insulating ink (Fujikura SN-8400C) is used; the printing screen emulsion thickness is 8μm; and the UV light intensity is 1200±50 mj / cm². The end face of the insulating ink layer is designed as a curve (achieved through screen patterning; the line shape is changed to a wavy curve). The line spacing between two adjacent silver lines is designed to be 224μm (original design 157μm). Experimental methods: The coverage and end face shape of the insulating ink are inspected using an optical microscope; the insulation resistance between the upper and lower electrodes is tested using a multimeter (requirement >100MΩ). Protective layer and silver wiring printing: Same as in Example 1; High current detection: Same as in Example 1; Product performance testing: Insulating ink transfer defect rate: After 100-piece testing, the transfer defect rate decreased from 100% when using LM-600DM10EDB ink to 0% (LM-600DMN2 ink + 1200mj / cm²). Silver wiring and ITO short circuit defect rate: decreased from 20% to 0% (aging treatment + curved end face + increased line spacing). Silver wiring resistance increase defect rate: decreased from 26.5% to 0%. Silver wiring breakage defect rate: decreased from 10% to 2%. Adjacent silver wiring short circuit defect rate: decreased from 10% to 4%. Overall production yield: increased from 70% to 95.2% (statistics based on continuous production of 500 pieces). Reliability test: As required by the customer, 30 finished products were subjected to high temperature (80℃, 120h), low temperature (-40℃, 120h), and high temperature and high humidity (60℃ / 90%RH, 120h) testing, all of which passed without electrical performance abnormalities.
[0027] To verify the influence of different process parameters on the performance of the metal mesh touchscreen in each embodiment of the present invention, a systematic comparative test was conducted on the samples prepared in Examples 1, 2, 3, and 4. All tests used the same testing equipment and standards. Thirty samples were taken from each example for testing, and the average value and standard deviation of the test results were calculated.
[0028] Comparative test items and methods: Transmittance test: The transmittance was measured at a wavelength of 550 nm using a UV-Vis spectrophotometer (Shimadzu UV-2600). Three different locations were measured for each sample and the average was taken.
[0029] Sheet resistance test: A four-probe sheet resistance meter (HPS2523) was used to measure five different locations for each sample and the average value was taken.
[0030] Bending flexibility test: Using the MIT bending tester, the bending frequency was 0.5Hz, the bending angle was 135°, the bending radius was 15μm, and the sheet resistance change rate was measured after 1500 bends.
[0031] High temperature and high humidity stability test: The samples were placed in a constant temperature and humidity chamber (85℃, 85%RH) and the sheet resistance change rate was tested after the corresponding number of days (Examples 1, 2 and 4 were placed for 16 days, and Example 3 was placed for 9 days due to the easy oxidation of the copper mesh).
[0032] Production yield statistics: Each example involves the continuous production of 500 to 1000 pieces, and the final product yield is statistically analyzed.
[0033] Antistatic capability test: Using an electrostatic generator, the voltage is gradually increased from 5kV until the silver wiring burns and breaks, and the critical voltage value is recorded.
[0034] Insulation performance test (specific to Example 4): Use a multimeter to test the insulation resistance between the upper and lower electrodes in the GF1 structure. The requirement is >100MΩ.
[0035] Reliability testing: High temperature (80℃, 120h), low temperature (-40℃, 120h), and high temperature and high humidity (60℃ / 90%RH, 120h) tests were conducted.
[0036] Please refer to Table 1 for a comparison of the process parameters of each embodiment. Table 1
[0037] Please refer to Table 2 for a comparison of the photoelectric performance and flexibility test results of each embodiment. Table 2
[0038] Please refer to Table 3 for a comparison of the stability and yield of each embodiment. Table 3
[0039] Please refer to Table 4 for a comparison of the insulation performance improvement effects in Example 4: Table 4
[0040] The reliability results for Example 4 are shown in Table 5: Table 5
[0041] Analysis of Tables 1 to 5 above shows that: Example 1 (side length 100μm) has the highest light transmittance (74.1%) and moderate sheet resistance (14.9Ω / sq); Example 3 (side length 25μm) has the lowest light transmittance (45.6%), but also the lowest sheet resistance (7.9Ω / sq); Example 2 (side length 50μm) has moderate performance. This indicates that photoelectric performance can be effectively controlled by adjusting the grid side length to meet different application requirements. The sheet resistance change rate after 1500 bends in the four embodiments is between 24.8% and 25.3%, with minimal differences, proving that the regular hexagonal grid structure has consistent compactness parameters and that bending stability is independent of grid size. Embodiment 3 (copper + electroplated Ni protective layer) performed best, with an increase of only 3% after 9 days. Embodiments 1, 2, and 4 (aluminum + SnO2 protective layer) increased by about 10% after 16 days, which is far better than the unprotected copper grid (an increase of 75% after 16 days), proving that the protective layer technology is effective. Embodiment 3 (sheet silver powder 30kV) was the best, followed by Embodiments 1 and 4 (25kV), and Embodiment 2 (20kV) was slightly lower. The use of flake silver powder (Toyobo Ink) is superior to that of traditional spherical silver powder (Taiyo Ink, 5-10kV). Through aging treatment, curved end face design, increased line spacing, and optimized insulating ink, the defect rates of various products were significantly reduced, and the overall yield rate was increased from 70% to 95.2%, with all reliability tests passed. After adopting the graphical simulation method, the electrical inspection error rate of the four embodiments was reduced to 1.2%, which is far lower than the 12.5% of the traditional calculation method, verifying the universality of the method.
[0042] In summary, the manufacturing process of the metal mesh touch screen in the above embodiments of the present invention stabilizes the dimensions through ITO film aging treatment and optimizes magnetron sputtering parameters to form a high-transmittance, low-resistance metal layer; obtains the mesh pattern by laser direct writing or photolithography and embeds it into the substrate to achieve a flush structure, thereby enhancing adhesion and bending stability; enhances the oxidation resistance of the copper mesh by forming a SnO2 protective layer through SnF2 coating; and effectively suppresses electrostatic breakage by printing silver wiring with sheet silver powder and using high current detection, thereby significantly improving product yield and reliability.
[0043] The embodiments described above are merely illustrative of several implementations of the present invention, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the invention patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of the present invention, and these all fall within the protection scope of the present invention. Therefore, the protection scope of this invention patent should be determined by the appended claims.
Claims
1. A manufacturing process for a metal mesh touchscreen, characterized in that, The preparation process includes: An aging process is performed on an ITO film on a flexible transparent substrate, followed by a coating crystallization process on the ITO film. An upper electrode and a lower electrode are respectively disposed on the upper and lower surfaces of the ITO film to form an ITO channel, and the ITO channel is divided into several tiny cells. A metal conductive layer is formed by depositing a metal thin film on the surface of the aging-treated flexible transparent substrate by magnetron sputtering, and then patterning the metal conductive layer by laser direct writing or a combination of photolithography and etching to form a grid pattern to obtain a metal grid conductive layer. The metal mesh conductive layer is embedded in the upper surface of the flexible transparent substrate, and the metal mesh conductive layer is flush with the upper surface of the flexible substrate; An insulating layer and a protective layer are sequentially plated onto the conductive layer of the metal mesh to obtain a semi-finished metal mesh touch screen, and silver wiring is printed on the semi-finished metal mesh touch screen.
2. The manufacturing process of the metal mesh touchscreen according to claim 1, characterized in that, The aging treatment temperature is 150℃~180℃.
3. The manufacturing process of the metal mesh touchscreen according to claim 1, characterized in that, The magnetron sputtering uses aluminum as the metal material, the sputtering time is 6-7 minutes, the sputtering power is 5%-20%, and the vacuum degree is 3.6 × 10⁻⁶. - ³Pa.
4. The manufacturing process of the metal mesh touchscreen according to claim 1, characterized in that, The conductive metal mesh obtained by laser direct writing etching has a linewidth of 5μm to 6μm and a side length of 25μm to 100μm, which is a regular hexagonal aluminum mesh.
5. The manufacturing process of the metal mesh touchscreen according to claim 1, characterized in that, The conductive metal mesh layer is embedded in the flexible transparent substrate by photolithography combined with electrochemical deposition, and the deposition time is 80s to 120s.
6. The manufacturing process of the metal mesh touchscreen according to claim 1, characterized in that, The insulating layer is obtained by printing with insulating ink, and the emulsion thickness of the printing screen for printing the insulating ink is 8μm to 10μm.
7. The manufacturing process of the metal mesh touchscreen according to claim 1, characterized in that, The preparation of the protective layer includes immersing a copper mesh film in a coating solution containing SnF2 for coating, so as to generate a SnO2-containing protective layer on the surface of the copper mesh film, and the coating time is 0.5h to 2h.
8. The manufacturing process of the metal mesh touchscreen according to claim 1, characterized in that, Silver wiring is printed using silver ink containing flake silver powder, wherein the antistatic capacity of the flake silver powder is 20kV to 30kV.
9. The manufacturing process of the metal mesh touchscreen according to claim 1, characterized in that, After the step of printing silver wiring on the semi-finished metal mesh touchscreen, the method further includes: The stability of the silver wiring was tested using a high-voltage testing device.
10. A metal mesh touchscreen, manufactured by the metal mesh touchscreen manufacturing process according to any one of claims 1 to 9, characterized in that, include: A flexible transparent substrate, wherein an ITO film is disposed on the flexible transparent substrate, and an upper electrode and a lower electrode are respectively disposed on the upper and lower surfaces of the ITO film; A metal mesh conductive layer is disposed on the upper surface of the flexible transparent substrate. The metal mesh conductive layer is a mesh pattern formed by several metal wires intersecting and connecting with each other. The mesh pattern includes several periodically arranged closed mesh units. An insulating layer and a protective layer are sequentially disposed on the upper surface of the metal mesh conductive layer; The metal wire has a linewidth of 5μm to 30μm, the line spacing between adjacent metal wires is 25μm to 400μm, the thickness of the metal mesh conductive layer is 40nm to 110nm, the transmittance of the metal mesh conductive layer at a wavelength of 550nm is greater than 70%, and the sheet resistance is less than 15Ω / sq.