Surface emitting laser, optical module and high-speed optical engine

Abstract

This invention relates to the field of semiconductor technology and provides a surface-emitting laser, an optical module, and a high-speed optical engine. The surface-emitting laser includes a device body comprising an optical lasing region and a current crosstalk region. The current crosstalk region is located inside the optical lasing region, and the optical lasing region is divided into at least two resonant chambers by the current crosstalk region. A portion of the current crosstalk region is insulated so that when the two resonant chambers are enabled by their respective electrodes, a portion of the current in one resonant chamber is fed into the other resonant chamber through the uninsulated portion of the current crosstalk region, achieving coupled superposition phase (coherence). This allows for the modulation of the two chambers (superposition, cancellation, one strong and one weak). This coupling results in a high-order, two-dimensional, and phase-coupled oscillation state, which is beneficial for single-mode emission. This single-mode characteristic allows the modulation response to provide a suitable pulse shape for digital data transmission.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor technology, and particularly relates to a surface-emitting laser, an optical module, and a high-speed optical engine. Background Technology

[0002] Light-emitting devices (surface-emitting lasers) are currently widely used in a variety of applications, especially in lighting, projection displays, sensing, materials processing, optical storage, optical data transmission, and other applications. Light-emitting devices can emit light in single or multiple modes at the same or different wavelengths, and can be designed to emit in the fundamental mode or higher-order transverse modes. Traditional narrow-strip edge-emitting dual-heterogeneous lasers are typically designed to emit in the fundamental transverse mode. Conversely, large-area edge-emitting lasers or industrial surface-emitting lasers usually emit in multiple transverse modes. Edge-emitting tilted-cavity lasers, or tilted-wave lasers, are unique in that their tilted cavity design gives the wave vector (k) a significant vertical component perpendicular to the layer plane, enabling directional emission of a single vertical higher-order transverse mode. This characteristic distinguishes them from ordinary edge-emitting lasers, where the wave vector is nearly parallel to the layer plane and prone to multimode emission. Similarly, in this case, transverse multimode operation is possible if the stripe width is large. Simultaneously, to ensure sufficient power for the emitting device, a large excitation area is crucial to avoid gain saturation and thermal flipping effects. In related technologies, single-cavity surface-emitting lasers (SELs) control the output optical field through a single injection current, resulting in a relatively simple control dimension. Dual-cavity SELs, on the other hand, have different inter-cavity structural designs: some designs employ an inter-cavity electrical isolation structure to achieve independent driving of the two cavities. Different structures exhibit varying characteristics in terms of independent controllability and optical field control flexibility. Designing a SEL structure that combines independent electrical injection and flexible control capabilities is one of the research directions in this field. Summary of the Invention

[0003] The purpose of this invention is to overcome at least one of the shortcomings of the prior art and to provide a surface-emitting laser, an optical module and a high-speed optical engine, which realizes stable output of supermode laser over a wide current range, and the mode control is relatively simple and the coupling is relatively easy.

[0004] The technical solution of this invention is: A surface-emitting laser includes a device body, the device body comprising an optical lasing region and a current crosstalk region; The current crosstalk region is located inside the photolasing region, and the photolasing region is divided into at least two resonant chambers by the current crosstalk region. A portion of the current crosstalk region is set to be insulated so that when the two resonant chambers are enabled by their respective electrodes, a portion of the current in one resonant chamber is fed into the other resonant chamber through the uninsulated portion of the current crosstalk region.

[0005] Optionally, the electrodes corresponding to at least one of the resonant chambers are configured to input a stable voltage; the electrodes corresponding to at least another resonant chamber are configured to input an adjustable voltage. Alternatively, the electrodes corresponding to at least two of the resonant chambers are configured for independently inputting an adjustable voltage.

[0006] Optionally, the current crosstalk region includes a plurality of insulating portions; the plurality of insulating portions are arranged at intervals from one near the edge of the light lasing region to another near the edge of the light lasing region, so as to define the resonant cavity in the light lasing region.

[0007] Optionally, the laser emission region has a non-centrosymmetric shape; And / or, the insulating part is disposed along the middle of the light lasing region, dividing the light lasing region into two resonant chambers disposed symmetrically or asymmetrically along the trajectory of the insulating part.

[0008] Optionally, the planar shape of the resonant cavity is teardrop-shaped, elliptical, oblong, or rhomboid.

[0009] Optionally, the insulating portion is formed by ion implantation into the device body at a predetermined depth; Alternatively, the insulating portion may be formed by a pore disposed in the main body of the device.

[0010] Optionally, the device body includes a substrate layer, a bottom mirror structure, an active layer, and a top mirror structure, wherein the substrate layer, the bottom mirror structure, the active layer, and the top mirror structure are arranged sequentially; the top mirror structure includes several functional layers with overlapping high and low aluminum composition contents.

[0011] Optionally, the region of the functional layer corresponding to the photolasing region is a non-oxidized region, and the region surrounding the non-oxidized region is an oxidized region; The non-oxidized region and the oxidized region have different effective optical thicknesses, so that each of the resonant cavities can be reused as a high-order mode leakage cavity for leaking high-order mode lasers.

[0012] Optionally, the functional layer includes a first semiconductor layer and a second semiconductor layer with different aluminum composition contents; the effective optical thickness of the non-oxidized region is D1, and the effective optical thickness of the oxidized region is D2; the refractive index of the first semiconductor layer is n1, and the thickness of the first semiconductor layer is d1; the refractive index of the second semiconductor layer when unoxidized is n2, and the refractive index of the second semiconductor layer after oxidation is n... 3， The thickness of the second semiconductor layer is d2; D1 and D2 satisfy: Where m and P are both integers not less than zero, and λ is the laser operating wavelength.

[0013] Optionally, the first semiconductor layer is a low-aluminum semiconductor layer; the second semiconductor layer is a high-aluminum semiconductor layer.

[0014] Optionally, the electrode includes a first electrode structure and a second electrode structure. The first electrode structure is disposed on the top of the device body and electrically connected to the top reflector structure; the second electrode structure is electrically connected to the bottom reflector structure; the first electrode structure includes at least two independent electrodes that are in contact with each resonant cavity.

[0015] Optionally, some or all of the light-emitting surfaces of the resonant cavity are provided with subwavelength gratings for controlling the polarization state and / or wavefront phase of the laser beam.

[0016] The present invention also provides an optical module, including an optical emitting component and an optical receiving component; the optical emitting component employs the aforementioned surface-emitting laser.

[0017] The present invention also provides a high-speed optical engine, comprising an electronic integrated chip and a photonic integrated chip; The electronic integrated chip is disposed on the same carrier board adjacent to the photonic integrated chip; or The electronic integrated chip is disposed below the photonic integrated chip; or The electronic integrated chip is disposed above the photonic integrated chip; The photonic integrated chip uses the aforementioned surface-emitting laser.

[0018] The present invention provides a surface-emitting laser, an optical module, and a high-speed optical engine. The lasing region is divided into at least two resonant chambers by a current crosstalk region. Part of the current crosstalk region is set to be insulated so that when the two resonant chambers are enabled by their respective electrodes, part of the current in one resonant chamber is fed into the other resonant chamber through the uninsulated part of the current crosstalk region, coupling and superimposing the phase (coherence). Ultimately, the two (or more) resonant chambers can be modulated (superimposed, destructive, one strong and one weak). This coupling leads to the generation of high-order, two-dimensional, and phase-coupled oscillation states, which is beneficial for single-mode emission. This single-mode characteristic allows the modulation response to provide a suitable pulse shape for digital data transmission, enabling the surface-emitting laser to stabilize supermode laser conditions over a wider current range. Attached Figure Description

[0019] To more clearly illustrate the technical solutions in the embodiments of the present invention, the accompanying drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0020] Figure 1 This is a cross-sectional schematic diagram of a surface-emitting laser provided in an embodiment of the present invention; Figure 2 This is a planar schematic diagram of a surface-emitting laser provided in an embodiment of the present invention; Figure 3 This is a device photoelectric performance test diagram of a surface-emitting laser provided in an embodiment of the present invention.

[0021] Device body 10; first chamber 101; second chamber 102; photolasing region 103; current crosstalk region 210; insulating part 211; ion implantation point 212; first independent electrode 110; second independent electrode 120; functional layer 130; substrate layer 140; Second electrode structure 150; top reflector structure 160; bottom reflector structure 170. Detailed Implementation

[0022] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the invention.

[0023] It should be noted that the terms "setup" and "connection" should be interpreted broadly. For example, they can refer to direct setup or connection, or indirect setup or connection through centered components or centered structures.

[0024] Furthermore, in embodiments of this invention, terms such as "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," and "outer" are used to indicate orientation or positional relationships based on the orientation or positional relationships shown in the accompanying drawings, or in a conventional placement or usage state. These terms are merely for the convenience of describing the invention and simplifying the description, and do not indicate or imply that the structures, features, devices, or elements referred to must have a specific orientation or positional relationship, nor that they must be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the invention. In the description of this invention, unless otherwise stated, "a plurality of" means two or more.

[0025] The various specific technical features and embodiments described in the detailed embodiments can be combined in any suitable manner without contradiction. For example, different implementation methods can be formed by combining different specific technical features / embodiments. In order to avoid unnecessary repetition, the various possible combinations of the various specific technical features / embodiments in this invention will not be described separately.

[0026] like Figure 1 and Figure 2 As shown, an embodiment of the present invention provides a surface-emitting laser, including a device body 10, which includes an optical lasing region 103 and a current crosstalk region 210. The current crosstalk region 210 is located inside the optical lasing region 103, and the optical lasing region 103 is divided into at least two resonant chambers by the current crosstalk region 210. A portion of the current crosstalk region 210 is set as insulation, so that when the two resonant chambers are enabled by their respective electrodes, a portion of the current in one resonant chamber is fed into the other resonant chamber through the uninsulated portion of the current crosstalk region 210, coupling and superimposing the phase (coherence). Ultimately, the two (or more) resonant chambers can be modulated (superimposed, destructive, one strong and one weak). This coupling leads to the generation of higher-order, two-dimensional, and phase-coupled oscillation states, which is beneficial for single-mode emission. This single-mode characteristic causes the modulation response to provide a suitable pulse shape for digital data transmission, enabling the surface-emitting laser to stabilize supermode laser conditions over a wider current range.

[0027] In this embodiment, the two resonant cavities include at least a first cavity 101 and a second cavity 102 arranged adjacent to each other. The first cavity 101 and the second cavity 102 are arranged adjacent to each other and separated by a current crosstalk region 210. The electrodes include a first independent electrode 110 and a second independent electrode 120. That is, the device body 10 is provided with a first independent electrode 110 for injecting current into the first cavity 101 and a second independent electrode 120 for injecting current into the second cavity 102. The first independent electrode 110 and the second independent electrode 120 are configured to independently control electrical parameters, so that an intercavity voltage difference is generated between the first cavity 101 and the second cavity 102, so as to drive the current through the current crosstalk region 210 and generate electrical crosstalk, thereby causing the surface-emitting laser to generate intercavity electrical coupling, forming a single-mode dual-cavity weakly reverse-guided coupled coherent VCSEL device. In this case, the first cavity 101 and the second cavity 102 are equipped with independent first independent electrodes 110 and second independent electrodes 120, which can independently control the electrical parameters of the two resonant cavities (i.e., the first cavity 101 and the second cavity 102). A precisely adjustable intercavity voltage difference can be formed between the first cavity 101 and the second cavity 102, and the current can be controlled to pass through the current crosstalk region 210 and generate electrical crosstalk, so that the surface-emitting laser can form a stable and controllable intercavity electrical coupling. Specifically, the two resonant cavities can be injected with different voltages through their respective electrodes. The voltage deviation between the two resonant cavities causes some current to flow laterally through the current crosstalk region 210, generating electrical crosstalk current and thus creating inter-cavity electrical coupling. When the two resonant cavities are enabled by their respective electrodes, part of the current in one resonant cavity is fed into the other resonant cavity through the uninsulated part of the current crosstalk region 210. This allows the pump current of one cavity to partially supplement the other cavity (for example, flowing from the first cavity 101 to the second cavity 102, or from the second cavity 102 to the first cavity 101). This coupling enables stable supermode laser conditions over a wider current range and is easy to manufacture and has low cost.

[0028] Optionally, some or all of the resonant cavity surfaces are provided with subwavelength gratings for controlling the polarization state and / or wavefront phase of the laser beam. The structure, period, duty cycle, etc., of the subwavelength gratings in each resonant cavity can be the same or different.

[0029] Optionally, the current crosstalk region 210 includes a plurality of insulating portions 211; the plurality of (at least two) insulating portions 211 are arranged at intervals from one near the edge of the photolasing region 103 to another. When there is a voltage difference between the two resonant chambers (first chamber 101, second chamber 102), the current can pass through the gap between adjacent insulating portions 211 (i.e., the uninsulated part in the current crosstalk region 210). The spaced insulating portions 211 can define each of the resonant chambers in the photolasing region 103.

[0030] Optionally, the photolasing region 103 has a non-centrosymmetric shape, that is, the photolasing region 103 is a non-circular, non-square, or other non-centrosymmetric shape; in specific applications, the resonant cavity can be teardrop-shaped, elliptical, rhomboid, or oblong (waist-shaped), etc. The non-centrosymmetric design of the photolasing region 103 breaks the central symmetry of traditional circular or square cavities, which can effectively suppress the generation of higher-order modes and ensure that the device stably outputs single-mode laser light over a wide current range.

[0031] Optionally, the insulating portion 211 is disposed along the middle of the photolasing region 103, dividing the photolasing region 103 into two resonant chambers arranged symmetrically or asymmetrically along the trajectory of the insulating portion 211. When the photolasing region 103 has a left-right symmetrical shape (not a centrally symmetrical shape), the insulating portion 211 can be arranged at intervals along the symmetrical center line of the photolasing region 103.

[0032] In some embodiments, the insulating portion 211 may also be discretely distributed in the current crosstalk region 210.

[0033] Optionally, the insulating portion 211 is formed by ion implantation into the device body 10 at a predetermined depth. That is, the insulating portion 211 can be an ion implantation point 212. The two resonant chambers (the first chamber 101 and the second chamber 102) are located on opposite sides of the current crosstalk region 210, and the ion implantation point 212 forms a high-resistance insulating region in the device body 10. In specific applications, the ion implantation point 212 is formed by ion implantation, creating a current coupling gap between adjacent insulating portions. This process is simple and low-cost. The depth, power, and time of ion implantation can be set according to actual conditions. Ions can be implanted into the active region, and the depth can also reach the bottom electrode layer.

[0034] Alternatively, the insulating portion 211 may also be formed by a hole disposed in the device body 110. Insulation and isolation (physical disconnection) can be achieved by forming the hole through photolithography etching / hole formation. Multiple adjacent holes are formed at predetermined locations on the device body 10 using a photolithography process; these holes may be cavity structures or filled with insulating material.

[0035] Optionally, the device body includes a substrate layer 140, a bottom mirror structure 170, an active layer, and a top mirror structure 160, wherein the substrate layer 140, the bottom mirror structure 170, the active layer, and the top mirror structure 160 are arranged sequentially; the top mirror structure 160 includes a plurality of functional layers 130 with overlapping high and low aluminum composition contents.

[0036] Optionally, the functional layer 130 corresponding to the photolasing region 103 is a non-oxidized region, and the area surrounding the non-oxidized region is an oxidized region (i.e., an oxidized region). The functional layer 130 is divided into an outer oxidized region (i.e., an oxidized region) and an inner non-oxidized region (i.e., an unoxidized region). That is, the oxidized region surrounds the periphery of the non-oxidized region. In specific applications, the current crosstalk region 210 can be arranged in a strip shape in the middle of the oxidized region, and the two ends of the current crosstalk region 210 are attached to the inner edge of the non-oxidized region, dividing the oxidized region into a first chamber 101 and a second chamber 102. The ion implantation region (current crosstalk region 210) between the two chambers is a high-resistance non-insulating state, allowing only the pump current of the fundamental mode to flow laterally.

[0037] Optionally, the effective optical thicknesses of the non-oxidized region and the oxidized region are different, allowing the first chamber 101 and the second chamber 102 to be configured as high-order mode leakage cavities for leaking high-order mode laser light. Since the optical loss of the high-order transverse mode is much greater than that of the fundamental mode, single-fundamental transverse mode output is achieved. It should be noted that the effective optical thickness is equivalent to the refractive index of the material multiplied by the physical thickness of the material. The types, number, and physical thicknesses of the physical layers contained in the unoxidized region (OA) and the oxidized region can be the same in the longitudinal direction; the only difference is the material state (whether or not the second semiconductor layer is oxidized), resulting in different longitudinal optical thicknesses D1 and D2.

[0038] Optionally, the functional layer 130 includes a first semiconductor layer and a second semiconductor layer with different aluminum composition contents; the effective optical thickness of the non-oxidized region is D1, and the effective optical thickness of the oxidized region is D2; the refractive index of the first semiconductor layer is n1, and the thickness of the first semiconductor layer is d1; the refractive index of the second semiconductor layer when unoxidized is n2, the refractive index of the second semiconductor layer after oxidation is n3, and the thickness of the second semiconductor layer is d2; D1 and D2 satisfy: Where m and P are both integers not less than zero (non-negative integers), and λ is the laser operating wavelength.

[0039] The optical thickness D1 of the non-oxidized region is an odd multiple of 1 / 4 of the laser operating wavelength λ. During the round-trip reflection of the fundamental mode light field in this region, constructive interference is formed, resulting in continuous superposition of light field energy with extremely low loss. This allows for stable oscillation within the cavity, effectively preserving the fundamental mode. The optical thickness D2 of the oxidized region is also 1 / 4 of the laser operating wavelength λ. When the higher-order mode light field diffuses into the region, it forms destructive interference during round-trip reflection, and the light field energy cancels each other out, making effective accumulation impossible. In the oxidized region, the second semiconductor layer is oxidized into an insulating oxide layer, which forms a significant refractive index difference with the semiconductor layer in the non-oxidized region. The higher-order mode light field will experience scattering loss at the interface between the two, and the insulating oxide layer has inherent absorption loss for the higher-order mode light field, making the total loss of the higher-order mode light field much greater than the optical gain of the active layer, and unable to form stable oscillation in the cavity. The inherent difference in the mode field distribution is used to achieve directional screening, so that the higher-order mode cannot oscillate due to excessive loss and is forced to leak, while the fundamental mode is stably retained in the non-oxidized region. The first cavity 101 and the second cavity 102 are reused as a higher-order mode leakage cavity for leaking higher-order mode laser.

[0040] Optionally, the first semiconductor layer is a low-aluminum semiconductor layer; the second semiconductor layer is a high-aluminum semiconductor layer. In this embodiment, the first semiconductor layer is a low-aluminum AlGaAs layer (low-Al), and the second semiconductor layer is a high-aluminum AlGaAs layer (high-Al). Whether the high-aluminum AlGaAs layer is oxidized or not results in a different refractive index. The first semiconductor layer, being a low-aluminum semiconductor layer, does not participate in the oxidation reaction and maintains its semiconductor properties. The second semiconductor layer, being a high-aluminum semiconductor layer, maintains its high-aluminum semiconductor state in the unoxidized region (OA). In the oxidized region, the second semiconductor layer is oxidized to aluminum oxide (Al2O3) by an oxidation process. It can be understood that the oxidation depth in the oxidation process is advanced laterally from the edge of the device body 10 towards the center, controlled by oxidation time, temperature, and moisture, which determines the aperture size for current limiting and mode limiting.

[0041] Understandably, due to the different material states (whether oxidized or not) of the second semiconductor layer, the longitudinal optical thicknesses D1 and D2 of the unoxidized region (OA) and the oxidized region are different.

[0042] Optionally, the electrode includes a first electrode structure and a second electrode structure 150. The first electrode structure is disposed on the top of the device body 10 and electrically connected to the top reflector structure 160; the second electrode structure is disposed on the bottom of the device body 10 and electrically connected to the bottom reflector structure 170. The first electrode structure includes at least two independent electrodes that are in corresponding contact with each resonant cavity. In this embodiment, the independent electrodes include relatively independent first independent electrodes 110 and second independent electrodes 120. The second electrode structure 150 can be a common electrode, which can be stacked on the substrate layer 140. The second electrode structure can be an N-type ohmic layer, used as a common contact electrode and providing a current loop. The first electrode structure can be configured as at least two independent electrodes, that is, at least including the aforementioned first independent electrode 110 and second independent electrode 120. The first independent electrode 110 and second independent electrode 120 can be a top P-type ohmic contact layer, that is, the uppermost P-type ohmic contact electrode of the device body 10, to achieve efficient current injection and transmission. The first chamber 101 and the second chamber 102 can be arranged along the first direction (left and right direction in the figure). The first independent electrode 110 and the second independent electrode 120 can also be arranged opposite each other along the first direction (left and right direction in the figure) as two contact electrodes. The first independent electrode 110 is located on the top of the device and close to the first side (left side) of the device body 10, and the second independent electrode 120 is located on the top of the device and close to the second side (right side) of the device body 10.

[0043] Optionally, at least one independent electrode (the first independent electrode 110) is configured to input a stable voltage; at least another independent electrode (the second independent electrode 120) is configured to input an adjustable voltage. The configuration uses the first chamber 101 as a "reference chamber" and the second chamber 102 as a "dynamically adjustable chamber." A directional and controllable inter-chamber voltage difference is formed through the combination of voltage stabilization and adjustable voltage, driving the current through the current crosstalk region 210 to generate precisely adjustable electrical crosstalk. This configuration only requires voltage adjustment of a single independent electrode to achieve the emission state control of the entire device, eliminating the need for simultaneous adjustment of the dual-chamber voltage and reducing debugging difficulty. Alternatively, both electrodes can be configured to independently input adjustable voltages; that is, both the first independent electrode 110 and the second independent electrode 120 can be configured to input adjustable voltages, making both chambers independently dynamically adjustable emission chambers. A bidirectional controllable inter-chamber voltage difference is formed through independent adjustment of the dual voltages, providing a relatively flexible control method.

[0044] like Figure 3As shown, the far-field patterns under all current combinations are single-peak narrow bands, without multi-peaks or clutter caused by higher-order modes, proving that the higher-order mode leakage cavity C1 effectively achieves higher-order mode leakage, and both cavities stably output single-fundamental mode laser; stable output over a wide current range: from low current (1.10mA / 1.80mA) to high current (9.10mA / 10.90mA), the far-field pattern always remains single-peak and directionally stable, proving that the inter-cavity electrical coupling effectively avoids gain saturation and thermal reversal effects, achieving stable output of supermode laser over a wide current range, with excellent application results.

[0045] The present invention also provides an optical module, including an optical emitting component and an optical receiving component; the optical emitting component employs the aforementioned surface-emitting laser.

[0046] The present invention also provides a high-speed optical engine, comprising an electronic integrated chip and a photonic integrated chip; The electronic integrated chip is disposed on the same carrier board adjacent to the photonic integrated chip; or The electronic integrated chip is disposed below the photonic integrated chip; or The electronic integrated chip is disposed above the photonic integrated chip; The photonic integrated chip uses the aforementioned surface-emitting laser.

[0047] The surface-emitting laser provided by this invention, by discretely arranging an adjacent first chamber 101 and a second chamber 102 in the main body 10 of the device, and using electrodes with independently adjustable electrical parameters, can form a controllable inter-cavity voltage difference between the two chambers. The driving current generates electrical crosstalk through the current crosstalk region 210 and forms inter-cavity electrical coupling. This not only retains the single-mode emission characteristics of a single-cavity small-aperture laser, but also effectively solves the problems of large-aperture multimode lasers and difficult mode control in traditional surface-emitting lasers, ensuring a regular laser beam shape and effective focusing, and improving coupling compatibility with single-mode optical fibers; it also enables dual-cavity pumping through inter-cavity electrical coupling. The dynamic complementary control of the pump current avoids gain saturation and thermal reversal effects, breaks through the current range limitation of stable single-mode operation, and achieves stable output of supermode lasers within a wide current range. At the same time, the dual-cavity synergy increases the surface area of ​​the equivalent excitation region, improving the single-mode output power of the device while ensuring single-mode emission. Furthermore, the overall structural design is compatible with standard manufacturing processes for surface-emitting lasers, avoiding the problems of large size and high cost caused by complex external optical systems. It takes into account the practicality and industrialization feasibility of the device, and solves the problems of difficult mode control, easy multimode with large aperture, low single-mode power, and difficulty in beam focusing in traditional VCSELs.

[0048] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions or improvements made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A surface-emitting laser, characterized in that, The device includes a main body, which comprises a photolasing region and a current crosstalk region; The current crosstalk region is located inside the photolasing region, and the photolasing region is divided into at least two resonant chambers by the current crosstalk region. A portion of the current crosstalk region is set to be insulated so that when the two resonant chambers are enabled by their respective electrodes, a portion of the current in one resonant chamber is fed into the other resonant chamber through the uninsulated portion of the current crosstalk region.

2. A surface-emitting laser as described in claim 1, characterized in that, The electrodes corresponding to at least one of the resonant chambers are configured for inputting a stable voltage; the electrodes corresponding to at least another resonant chamber are configured for inputting an adjustable voltage. Alternatively, the electrodes corresponding to at least two of the resonant chambers are configured for independently inputting an adjustable voltage.

3. A surface-emitting laser as described in claim 1, characterized in that, The current crosstalk region includes a plurality of insulating portions; the plurality of insulating portions are arranged at intervals from one near the edge of the light lasing region to another near the edge of the light lasing region, so as to define the resonant cavity in the light lasing region.

4. A surface-emitting laser as described in claim 3, characterized in that, The laser emission region has a non-centrally symmetrical shape; And / or, the insulating part is disposed along the middle of the light lasing region, dividing the light lasing region into two resonant chambers disposed symmetrically or asymmetrically along the trajectory of the insulating part.

5. A surface-emitting laser as described in claim 1, characterized in that, The planar shape of the resonant cavity is teardrop-shaped, elliptical, oblong, or rhomboid.

6. A surface-emitting laser as described in claim 3, characterized in that, The insulating portion is formed by ion implantation into the device body at a predetermined depth; Alternatively, the insulating portion may be formed by a pore disposed in the main body of the device.

7. A surface-emitting laser as described in any one of claims 1 to 6, characterized in that, The main body of the device includes a substrate layer, a bottom mirror structure, an active layer, and a top mirror structure, which are arranged sequentially. The top mirror structure includes several functional layers with alternating high and low aluminum content.

8. A surface-emitting laser as described in claim 7, characterized in that, The functional layer corresponding to the photolasing region is a non-oxidized region, and the area surrounding the non-oxidized region is an oxidized region. The non-oxidized region and the oxidized region have different effective optical thicknesses, so that each of the resonant cavities can be reused as a high-order mode leakage cavity for leaking high-order mode lasers.

9. A surface-emitting laser as described in claim 8, characterized in that, The functional layer comprises a first semiconductor layer and a second semiconductor layer with different aluminum component contents; the effective optical thickness of the non-oxidized region is D1, the effective optical thickness of the oxidized region is D2; the refractive index of the first semiconductor layer is n1, the thickness of the first semiconductor layer is d1; the refractive index of the second semiconductor layer before oxidation is n2, the refractive index of the second semiconductor layer after oxidation is n 3， The thickness of the second semiconductor layer is d2; D1 and D2 satisfy: Where m and P are both integers not less than zero, and λ is the laser operating wavelength.

10. A surface-emitting laser as described in claim 7, characterized in that, The electrode includes a first electrode structure and a second electrode structure. The first electrode structure is disposed on the top of the device body and electrically connected to the top reflector structure. The second electrode structure is electrically connected to the bottom reflector structure. The first electrode structure includes at least two independent electrodes that are in contact with each resonant cavity.

11. A surface-emitting laser as claimed in any one of claims 1 to 6, characterized in that, Some or all of the resonant cavity has a subwavelength grating on its light-emitting surface for controlling the polarization state and / or wavefront phase of the laser beam.

12. An optical module, characterized in that, It includes a light emitting component and a light receiving component; the light emitting component employs a surface-emitting laser as described in any one of claims 1-11.

13. A high-speed light engine, characterized in that, Including electronic integrated chips and photonic integrated chips; The electronic integrated chip is disposed on the same carrier board adjacent to the photonic integrated chip; or The electronic integrated chip is disposed below the photonic integrated chip; or The electronic integrated chip is disposed above the photonic integrated chip; The photonic integrated chip employs a surface-emitting laser as described in any one of claims 1-11.

Images