A method for nanoparticle-induced preparation of zinc arsenide

By using zinc salt reducing agent in the electrolytic cell to change the charge structure on the cathode surface, promoting arsenic species mass transfer and alloying to form a Zn3As2 deposition layer, the problems of electrostatic repulsion and product instability in arsenic-containing wastewater treatment are solved, and efficient arsenic reduction and alloy recovery are achieved.

CN122406241APending Publication Date: 2026-07-17ZHENGZHOU UNIV +2
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Patent Information

Application Number
CN202610557395.8
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2026-04-24
Publication Date
2026-07-17

AI Technical Summary

Technical Problem

Existing technologies are unable to efficiently reduce arsenic anions in arsenic-containing wastewater and generate stable zinc arsenide alloys. They suffer from problems such as electrostatic repulsion hindering mass transfer and unstable products, resulting in low reduction efficiency and the risk of secondary pollution.

Method used

An electrolytic cell equipped with an ion exchange membrane is used. By adding soluble zinc salt to the cathode chamber and applying a constant potential or current, the reduction effect of zinc ions is used to change the charge structure on the cathode surface, promote the mass transfer of arsenic species, and alloy the cathode surface to form a Zn3As2 deposition layer.

Benefits of technology

This approach achieves the treatment of arsenic pollution and the resource recovery of semiconductor materials, generating a thermodynamically stable Zn3As2 alloy, which improves current efficiency and arsenic recovery rate, and avoids secondary pollution and subsequent disposal costs.

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Abstract

本发明提供了一种基于纳米颗粒诱导制备砷化锌的方法。采用阴离子交换膜将电解槽分隔为阳极室和阴极室。阴极室中引入含As(III)的废水及锌盐,阳极室为电解质溶液。在电场作用下,阴极发生反应:Zn2+优先还原生成的锌原子或锌物种,有效削弱了As(III)含氧阴离子(如H2AsO3‑,H3AsO3)与阴极表面的静电斥力,并为其还原提供活性位点,促进了As(III)的还原。最终,锌与砷在阴极表面发生电化学共沉积,形成化学性质稳定的Zn3As2合金薄膜。该合金结构致密,其中的砷被牢固固定,不会发生二次溶出,彻底解决了传统砷固定技术潜在的污染风险。同时,所得Zn3As2合金可作为半导体材料使用。
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