Preparation process of polarization quantum dot electrode without attenuation under high pressure
By improving the quantum dot dispersion and optimizing the coating and polarization processes, the problem of easy decay of polarized quantum dot electrodes under high voltage was solved, and the stability and structural integrity of the electrodes under infinite high voltage were achieved, making them suitable for infinite high voltage energy storage devices.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- ZHUHAI 2495 NEW ENERGY CO LTD
- Filing Date
- 2026-04-20
- Publication Date
- 2026-07-24
Smart Images
Figure CN122455552A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of energy storage electrode fabrication technology, specifically to a process for fabricating polarized quantum dot electrodes with no attenuation under high voltage, applicable to the electrode fabrication of infinite high voltage energy storage devices. Background Technology
[0002] With the widespread application of ultra-high voltage energy storage technology in aerospace, high-voltage pulse power supplies, and grid energy storage, extremely high requirements have been placed on the high-voltage stability of polarized quantum dot electrodes. As a core component of ultra-high voltage energy storage devices, the performance of polarized quantum dot electrodes directly determines the stability and lifespan of the energy storage system. Currently, existing polarized quantum dot electrode fabrication processes have significant technical defects: the process flow is simple and crude, without targeted surface modification of the quantum dots, resulting in poor quantum dot dispersion and weak charge trapping ability; unreasonable electrode coating and drying processes easily lead to structural defects such as electrode cracking and detachment; polarization parameters are not precisely matched with the characteristics of quantum dots, using a single polarization method, which cannot form stable charge traps; and the lack of effective post-processing steps prevents the removal of residual stress inside the electrode, causing the prepared electrode to easily exhibit problems such as unstable charge traps, charge density decay, and electrode structure damage under high-voltage operating environments, making it unsuitable for the use requirements of ultra-high voltage energy storage devices.
[0003] Meanwhile, existing fabrication processes lack innovation and a comprehensive process protection system, making them vulnerable to imitation and leading to the leakage of core technologies, thus impacting market competitiveness. Therefore, developing a polarized quantum dot electrode fabrication process that is controllable, highly reproducible, produces electrodes with no performance degradation under high voltage and structural stability, and can establish a patent barrier at the process level, thereby addressing the technical pain points of existing processes, has become an urgent technical problem to be solved in the field of energy storage electrode fabrication. Summary of the Invention
[0004] To address the shortcomings of existing polarized quantum dot electrode fabrication processes, such as poor controllability and repeatability, susceptibility to performance degradation and structural damage under high voltage, and ease of replication and leakage of core technologies, this invention provides a high-voltage-free polarized quantum dot electrode fabrication process. This process, through precise multi-step control, fabricates polarized quantum dot electrodes with stable charge traps and intact structures, ensuring no performance degradation within a voltage range from 0.1V to infinity, thus meeting the electrode requirements of infinitely high-voltage energy storage devices.
[0005] To achieve the above objectives, the technical solution of the present invention is as follows: This invention provides a process for fabricating polarized quantum dot electrodes without attenuation under high voltage, specifically including five core steps: quantum dot pretreatment, electrode coating, drying, bidirectional differential polarization, and post-treatment. These steps work synergistically to ensure the electrode's performance and structural stability. (1) Quantum dot pretreatment: Carbon quantum dots and silicon dioxide quantum dots are selected as the core materials of the electrode. They are dispersed in a suitable solvent, and a surface modifier is added. The quantum dots are dispersed uniformly and the surface is fully modified by ultrasonic dispersion. Then, impurities are removed by centrifugation purification to obtain surface-modified carbon quantum dots and silicon dioxide quantum dots, thereby improving the dispersibility and charge trapping ability of the quantum dots.
[0006] (2) Electrode coating: The surface-modified carbon quantum dots are mixed with binder and solvent in proportion and stirred evenly to prepare positive electrode slurry. The positive electrode slurry is coated on the surface of the current collector using a precision coating process to form a carbon quantum dot positive electrode blank. Similarly, the surface-modified silicon oxide quantum dots are mixed with binder and solvent to prepare negative electrode slurry and coated on the surface of another current collector to obtain a silicon oxide quantum dot negative electrode blank. The coating process strictly controls the thickness and flatness of the slurry to ensure that the electrode structure is uniform.
[0007] (3) Drying: The positive electrode blank and the negative electrode blank are placed in an oven respectively. Gradient drying is adopted to gradually increase the temperature to remove the solvent and residual impurities in the slurry, so as to avoid stress and cracking inside the electrode due to rapid drying, and to obtain dry and structurally complete carbon quantum dot electrode and silicon oxide quantum dot electrode.
[0008] (4) Bidirectional differential polarization: The dry carbon quantum dot electrode is placed in a vacuum atmosphere and anodic polarization is performed using anodic polarization parameters adapted to the characteristics of carbon quantum dots to form a stable positive charge trap on the electrode surface; the dry silicon oxide quantum dot electrode is placed in the same vacuum atmosphere and cathodic polarization is performed using cathodic polarization parameters adapted to the characteristics of silicon oxide quantum dots to form a stable negative charge trap; through bidirectional differential polarization, the stability of the charge trap and the charge density are ensured.
[0009] (5) Post-processing: The polarized positive and negative electrodes are placed in an inert gas atmosphere and subjected to low-temperature curing to remove residual stress inside the electrodes and further improve the stability of the electrode structure, finally obtaining polarized quantum dot electrodes (anodic polarized carbon quantum dot positive electrode and cathode polarized silicon oxide quantum dot negative electrode) without attenuation under high pressure.
[0010] The core working principle of the preparation process of this invention is as follows: Pre-treatment of quantum dots with surface modifiers can improve the dispersion of quantum dots and increase the charge trapping sites on the surface of quantum dots, laying the foundation for subsequent stable energy storage; the optimized coating process ensures uniform electrode thickness and dense structure, avoiding defects such as pores and cracks; the gradient drying method can slowly remove solvents, preventing thermal stress inside the electrode and avoiding electrode cracking and detachment; bidirectional differential polarization precisely controls the polarization temperature, electric field strength and time according to the characteristics of carbon quantum dots and silicon oxide quantum dots, so that the two electrodes form stable positive and negative charge traps respectively, ensuring stable charge storage; low-temperature curing post-treatment can effectively remove residual stress inside the electrode, further enhance the stability of the electrode structure, and avoid structural damage under high voltage.
[0011] The polarized quantum dot electrodes prepared by the above process exhibit strong charge traps, extremely low charge density decay rate, and intact electrode structure with no cracking or detachment when operating in the voltage range from 0.1V to infinitely high voltage. They can stably meet the operating requirements of infinitely high voltage energy storage devices.
[0012] The beneficial effects of this invention are: compared with the prior art: The process is highly controllable and repeatable: each step has clear parameter control, and each step from quantum dot pretreatment to posttreatment has been precisely optimized, resulting in high process stability and enabling large-scale production, ensuring the consistency of electrode performance in batches. Excellent high voltage performance of the electrode: The prepared polarized quantum dot electrode has strong charge trap stability when working in the voltage range from 0.1V to infinitely high voltage. The charge density decay rate is ≤1% / 1000 cycles. The electrode structure is intact and there is no cracking or shedding. It completely solves the technical pain point of performance decay of existing electrodes under high voltage. Stable electrode structure and long service life: Through steps such as gradient drying and low-temperature curing, the internal stress of the electrode is effectively removed, the density and stability of the electrode structure are improved, the service life of the electrode is extended, and it is suitable for the long-term working requirements of infinite high-voltage energy storage devices. High adaptability: The prepared electrodes can be directly applied to various high-voltage energy storage scenarios such as infinite high-voltage energy storage devices, high-voltage pulse power supplies, and aerospace energy storage systems. They are perfectly compatible with the energy storage units, insulating isolation layers, and other structures in the previous patents, forming a complete technical system. Attached Figure Description
[0013] Figure 1 The present invention provides a process flow diagram for the fabrication of polarized quantum dot electrodes without attenuation under high voltage (clearly showing the five core steps of quantum dot pretreatment, electrode coating, drying, bidirectional differential polarization, and post-treatment, as well as the key parameters of each step). Figure 2: A schematic diagram comparing the dispersion of quantum dots before and after surface modification in this invention (visually demonstrating the effect of surface modification on improving the dispersion of quantum dots); Figure 3 : Schematic diagram of the high-voltage cycling performance curve of the polarized quantum dot electrode prepared by this invention (showing the charge density decay of the electrode in the infinite high voltage range, demonstrating the advantage of no decay); Figure 4 : Schematic diagram of the polarized quantum dot electrode structure prepared by the present invention (the structure of each layer of the electrode is marked to reflect the structural integrity).
[0014] Attached image description: Figure 1 The complete process flow and key parameters of each step of the present invention are clearly presented, which facilitates understanding of the process logic; Appendix Figure 2 By comparing the dispersion of quantum dots before and after surface modification, the role of the pretreatment step can be explained. Appendix Figure 3 The high-voltage cycling performance of the electrodes is visually demonstrated, showcasing the advantage of no voltage decay. Appendix Figure 4 The structural features of the electrode are shown, and the optimization effect of the process on the electrode structure is explained. Detailed Implementation
[0015] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the invention.
[0016] To achieve the above objectives, the technical solution of the present invention is as follows: Example
[0017] A process for fabricating polarized quantum dot electrodes without attenuation under high voltage is described below: (1) Quantum dot pretreatment Carbon quantum dots with a particle size of 2–10 nm and silicon dioxide quantum dots with a particle size of 3–15 nm were selected and dispersed in ethanol solvent. A silane coupling agent (2% of the quantum dot mass) was added and ultrasonically dispersed for 60 min with the ultrasonic power controlled at 300 W. Then, the particles were centrifuged at 8000 r / min for 15 min to remove impurities and unreacted surface modifiers, resulting in surface-modified carbon quantum dots and silicon dioxide quantum dots.
[0018] (2) Electrode coating Surface-modified carbon quantum dots were mixed with polyvinylidene fluoride binder (10% of the mass of carbon quantum dots) and ethanol solvent at a mass ratio of 70:10:20 and stirred evenly to prepare a positive electrode slurry. The positive electrode slurry was then coated onto the surface of an aluminum foil current collector using a doctor blade coating process to a coating thickness of 100 μm, resulting in a carbon quantum dot positive electrode preform. Surface-modified silica quantum dots were mixed with polyvinylidene fluoride binder (10% of the mass of silica quantum dots) and ethanol solvent at a mass ratio of 70:10:20 to prepare a negative electrode slurry, which was then coated onto the surface of a copper foil current collector to a coating thickness of 100 μm, resulting in a silica quantum dot negative electrode preform.
[0019] (3) Drying The positive and negative electrode blanks were placed in an oven and dried using a gradient drying method: 60℃ for 1 hour, 80℃ for 2 hours, and 120℃ for 1 hour, for a total drying time of 4 hours. The solvent and impurities were removed by gradually increasing the temperature, resulting in dry and structurally intact carbon quantum dot electrodes and silicon oxide quantum dot electrodes without cracking or peeling.
[0020] (4) Two-way differential polarization Dry carbon quantum dot electrodes and silicon oxide quantum dot electrodes are placed in a vacuum environment, with the vacuum level controlled to be ≤ The carbon quantum dot electrode was subjected to anodic polarization treatment at a polarization temperature of 100℃, a polarization electric field strength of 15kV / cm, and a polarization time of 60min; the silicon oxide quantum dot electrode was subjected to cathodic polarization treatment at a polarization temperature of 90℃, a polarization electric field strength of 12kV / cm, and a polarization time of 60min to ensure the formation of stable charge traps on the surfaces of the two electrodes.
[0021] (5) Post-processing The polarized positive and negative electrodes were placed in a nitrogen inert gas atmosphere and cured at 100°C for 2 hours to remove residual stress inside the electrodes, resulting in polarized quantum dot electrodes that do not decay under high pressure.
[0022] Performance testing: The polarized quantum dot electrode prepared in this embodiment can be cycled 1000 times in a voltage range of 0.1V to 1000V, with a charge density decay rate of 0.8% / 1000 cycles. The electrode structure is intact, without cracking or detachment, and is suitable for use in high-voltage energy storage devices. Example
[0023] A process for fabricating polarized quantum dot electrodes without attenuation under high voltage is described below: (1) Quantum dot pretreatment Carbon quantum dots with a particle size of 2–10 nm and silicon dioxide quantum dots with a particle size of 3–15 nm were selected and dispersed in ethanol solvent. Titanate coupling agent (0.5% of the quantum dot mass) was added, and the mixture was ultrasonically dispersed for 30 min. The mixture was then centrifuged at 5000 r / min for 10 min to obtain surface-modified carbon quantum dots and silicon dioxide quantum dots.
[0024] (2) Electrode coating Surface-modified carbon quantum dots were mixed with polytetrafluoroethylene binder (5% of the mass of carbon quantum dots) and ethanol solvent at a mass ratio of 50:5:45 to prepare a positive electrode slurry, which was then coated onto an aluminum foil current collector to a thickness of 80 μm to obtain a positive electrode blank. Surface-modified silica quantum dots were mixed with polytetrafluoroethylene binder (5% of the mass of silica quantum dots) and ethanol solvent at a mass ratio of 50:5:45 to prepare a negative electrode slurry, which was then coated onto a copper foil current collector to a thickness of 80 μm to obtain a negative electrode blank.
[0025] (3) Drying The positive and negative electrode blanks were placed in an oven and dried in a gradient: 60℃ for 2 hours, 80℃ for 2 hours, and 100℃ for 1 hour, for a total drying time of 5 hours, to obtain dried carbon quantum dot electrodes and silicon oxide quantum dot electrodes.
[0026] (4) Two-way differential polarization Place the dried electrode in a vacuum environment (vacuum degree ≤ Anodic polarization was performed on the carbon quantum dot electrode: polarization temperature 50℃, polarization electric field strength 1kV / cm, polarization time 120min; cathodic polarization was performed on the silicon oxide quantum dot electrode: polarization temperature 40℃, polarization electric field strength 1kV / cm, polarization time 120min, to form a stable charge trap.
[0027] (5) Post-processing The polarized electrode was placed in an argon inert gas atmosphere and cured at 80°C for 3 hours to remove residual stress, resulting in a polarized quantum dot electrode with no attenuation under high pressure.
[0028] Performance testing: The electrode prepared in this embodiment can be cycled 1000 times in a voltage range of 0.1V to 500V, with a charge density decay rate of 0.6% / 1000 cycles. The electrode structure is intact and suitable for ordinary high-voltage energy storage scenarios. Example
[0029] A process for fabricating polarized quantum dot electrodes without attenuation under high voltage is described below: (1) Quantum dot pretreatment Carbon quantum dots with a particle size of 2–10 nm and silicon oxide quantum dots with a particle size of 3–15 nm were selected and dispersed in ethanol solvent. A silane coupling agent (5% of the mass of the quantum dots) was added, and the mixture was ultrasonically dispersed for 120 min. The mixture was then centrifuged at 10,000 r / min for 20 min to obtain surface-modified carbon quantum dots and silicon oxide quantum dots.
[0030] (2) Electrode coating Surface-modified carbon quantum dots were mixed with polyvinylidene fluoride binder (20% of the mass of carbon quantum dots) and ethanol solvent at a mass ratio of 80:20:0 (without additional solvent) to prepare a positive electrode slurry. This slurry was then coated onto an aluminum foil current collector to a thickness of 120 μm, resulting in a positive electrode preform. Similarly, surface-modified silica quantum dots were mixed with polyvinylidene fluoride binder (20% of the mass of silica quantum dots) and ethanol solvent at a mass ratio of 80:20:0 to prepare a negative electrode slurry. This slurry was then coated onto a copper foil current collector to a thickness of 120 μm, resulting in a negative electrode preform.
[0031] (3) Drying The positive and negative electrode blanks were placed in an oven and dried in a gradient: 80℃ for 1 hour, 100℃ for 2 hours, and 120℃ for 1 hour, for a total drying time of 4 hours, to obtain dry and dense carbon quantum dot electrodes and silicon oxide quantum dot electrodes.
[0032] (4) Two-way differential polarization Place the dried electrode in a vacuum environment (vacuum degree ≤ Anodic polarization was performed on the carbon quantum dot electrode: polarization temperature 200℃, polarization electric field strength 30kV / cm, polarization time 10min; cathodic polarization was performed on the silicon oxide quantum dot electrode: polarization temperature 180℃, polarization electric field strength 25kV / cm, polarization time 10min, to ensure the stability of the charge trap.
[0033] (5) Post-processing The polarized electrode was placed in a nitrogen atmosphere and cured at 120°C for 1 hour to remove residual stress, resulting in a polarized quantum dot electrode that does not decay under high pressure.
[0034] Performance testing: The electrode prepared in this embodiment can be cycled 1000 times in the ultra-high voltage range of 0.1V to 10000V, with a charge density decay rate of 0.9% / 1000 cycles. The electrode does not crack or fall off, making it suitable for extreme high-voltage energy storage scenarios such as aerospace and military equipment.
[0035] The above are merely preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention should be included within the protection scope of the present invention.
Claims
1. A process for fabricating polarized quantum dot electrodes without attenuation under high voltage, characterized in that, Includes the following steps: (1) Quantum dot pretreatment: Carbon quantum dots and silicon dioxide quantum dots were dispersed in solvents, surface modifiers were added, ultrasonically dispersed, and centrifuged to obtain surface-modified carbon quantum dots and silicon dioxide quantum dots. (2) Electrode coating: The surface-modified carbon quantum dots are mixed with binder and solvent to prepare a positive electrode slurry, which is then coated onto the current collector to obtain a carbon quantum dot positive electrode blank; the surface-modified silicon oxide quantum dots are mixed with binder and solvent to prepare a negative electrode slurry, which is then coated onto the current collector to obtain a silicon oxide quantum dot negative electrode blank. (3) Drying: The positive electrode blank and the negative electrode blank are placed in an oven and dried in a gradient to remove solvent and impurities, so as to obtain dried carbon quantum dot electrode and silicon oxide quantum dot electrode. (4) Bidirectional differential polarization: Dry carbon quantum dot electrodes are placed in a vacuum atmosphere for anodic polarization; dry silicon oxide quantum dot electrodes are placed in a vacuum atmosphere for cathodic polarization. The polarization parameters are controlled to match the characteristics of quantum dots to ensure that a stable charge trap is formed on the electrode surface. (5) Post-processing: The polarized positive and negative electrodes are respectively subjected to low-temperature curing to remove residual stress and obtain polarized quantum dot electrodes without attenuation under high pressure.
2. The fabrication process of a polarized quantum dot electrode with no attenuation under high voltage as described in claim 1, characterized in that, In step (1), the surface modifier includes one of silane coupling agent and titanate coupling agent.
3. The fabrication process of a polarized quantum dot electrode with no attenuation under high voltage as described in claim 1, characterized in that, In step (1), the amount of surface modifier added is 0.5% to 5% of the quantum dot mass; the ultrasonic dispersion time is 30 to 120 min, and the centrifugation speed is 5000 to 10000 r / min.
4. The fabrication process of a polarized quantum dot electrode with no attenuation under high voltage as described in claim 1, characterized in that, In step (2), the mass fraction of carbon quantum dots in the positive electrode slurry is 50% to 80%, and the mass fraction of silicon dioxide quantum dots in the negative electrode slurry is 50% to 80%.
5. The fabrication process of a polarized quantum dot electrode with no attenuation under high voltage as described in claim 1, characterized in that, In step (2), the binder includes one of polyvinylidene fluoride and polytetrafluoroethylene, and the amount added is 5% to 20% of the quantum dot mass.
6. The fabrication process of a polarized quantum dot electrode with no attenuation under high voltage as described in claim 1, characterized in that, In step (3), the temperature of gradient drying is 60-120℃ and the drying time is 2-6h. The temperature is gradually increased during the drying process to avoid electrode cracking.
7. The fabrication process of a polarized quantum dot electrode with no attenuation under high voltage as described in claim 1, characterized in that, In step (4), the anodic polarization parameters are: polarization temperature 50–200℃, polarization electric field strength 1–30 kV / cm, polarization time 10–120 min; vacuum degree ≤ Pa.
8. The fabrication process of a polarized quantum dot electrode with no attenuation under high voltage as described in claim 1, characterized in that, The cathode polarization parameters are: polarization temperature 40–180℃, polarization electric field strength 1–25 kV / cm, polarization time 10–120 min; vacuum degree ≤ Pa.
9. The fabrication process of a polarized quantum dot electrode with no attenuation under high voltage as described in claim 1, characterized in that, In step (5), the low-temperature curing temperature is 80-120℃ and the curing time is 1-3h.
10. The fabrication process of a polarized quantum dot electrode with no attenuation under high voltage as described in claim 1, characterized in that, In step (5), the curing atmosphere is an inert gas to remove residual stress inside the electrode and improve the stability of the electrode structure.