A defect analysis method and device, equipment and medium of an electrochromic film

By adopting a systematic defect analysis method and combining multi-dimensional analysis techniques, the problems of low efficiency and poor accuracy in the defect analysis of electrochromic thin films have been solved, enabling rapid and accurate identification and root cause analysis of defects, and guiding the optimization of production processes.

CN122631645APending Publication Date: 2026-08-25ZHEJIANG JINGSHENG FILM TECH CO LTD
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Patent Information

Application Number
CN202610843840.7
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2026-06-11
Publication Date
2026-08-25

AI Technical Summary

Technical Problem

Existing technologies are inefficient and inaccurate in the analysis of defects in electrochromic thin films. They lack quantitative measurement of key three-dimensional information such as defect depth and step height, cannot distinguish between surface contaminants and defects in the film itself, and the analysis results are highly dependent on the operator's experience and lack systematicity and repeatability.

Method used

A systematic defect analysis method is adopted, including observing and marking defects in samples in a dark room, observing and classifying them using an optical microscope, obtaining defect contour parameters and microscopic morphology, performing component analysis, and combining various microscopic analysis equipment such as SEM, FIB, and EDS to achieve multi-dimensional quantitative characterization.

Benefits of technology

This technology enables the systematic, efficient, and accurate localization, identification, and root cause analysis of defects in electrochromic thin films, improving analysis efficiency and accuracy and guiding the optimization of production processes.

✦ Generated by Eureka AI based on patent content.

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Abstract

The present application relates to a kind of electrochromic film defect analysis method and device, equipment, medium, it is related to electrochromic field, including: sample is carried out in darkroom and is marked defect by fading observation, obtain marked sample;The defect in the obtained marked sample is observed using optical microscope and determines defect category, obtain marked sample;The defect of marked sample is profiled, microanalysis, component analysis, obtains defect profile parameter, defect microtopography, defect component;The nature of defect is judged based on at least one of defect profile parameter, defect microtopography and defect component.The defect analysis method provided in the present application, by optimizing the defect analysis process for photochromic film, realize system, efficiently, accurately to the surface of electrochromic film Complex and varied macro, micro defect (such as scratch, halo point, pinhole-like white spot, white spot, blue dot, abnormal shape and color point etc.) Positioning, identification, characterization and root cause analysis.
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Description

Technical Field

[0001] This invention relates to the field of electrochromism, and more specifically to a method, apparatus, equipment, and medium for defect analysis of electrochromic thin films. Background Technology

[0002] Electrochromic thin films are core materials for smart dimming devices. Their fabrication processes (such as magnetron sputtering and evaporation) are complex, and fluctuations in any process parameters or environmental disturbances can lead to various microscopic defects on the film surface. These defects are not only aesthetic issues but also performance killers, causing uneven coloring efficiency, slow response, short circuits, or even complete failure of the device.

[0003] Therefore, in the research and development and quality control process, it is crucial to conduct accurate analysis of defects. The most commonly used analysis method at present is the combination of optical microscopy observation and scanning electron microscopy (SEM) morphology analysis.

[0004] (1) Operation procedure: Technicians first look for defects on the sample with the naked eye or an optical microscope, and then directly sample the abnormal area and place it under SEM for high-magnification morphology observation. Sometimes, focused ion beam (FIB) and energy dispersive spectroscopy (EDS) are used to cut open the defect observation section and perform elemental point analysis.

[0005] (2) Analysis purpose: This scheme mainly obtains two-dimensional and three-dimensional morphological information and possible elemental composition of defects, which is used to make a preliminary judgment on the defect type (for example, if a depression is seen, FIB should be used to look at the cross section, and if a protrusion is seen, EDS should be performed).

[0006] However, existing defect analysis methods have the following drawbacks:

[0007] (1) Single analysis dimension: It relies heavily on two-dimensional image information and lacks quantitative measurement of key three-dimensional information such as defect depth and step height, making it impossible to distinguish between surface contaminants and defects in the film itself.

[0008] (2) High degree of blindness and low efficiency: jumping directly from visual observation to SEM analysis, the target is not clear, and it is easy to miss key defects or perform useless analysis on non-key defects, which is time-consuming and labor-intensive.

[0009] (3) Systemic deficiencies: There is no logically rigorous and progressively in-depth standardized process. The analysis results are highly dependent on the experience of the operators, and the repeatability and reliability are poor. Summary of the Invention

[0010] In view of the problems existing in the prior art, the purpose of the present invention is to provide a defect analysis method for electrochromic thin films, so as to solve the problems of low efficiency and poor accuracy in defect analysis of electrochromic thin films.

[0011] To achieve this objective, the present invention adopts the following technical solution:

[0012] In a first aspect, the present invention provides a defect analysis method for electrochromic thin films, the defect analysis method comprising:

[0013] The sample was observed to fade in a dark room and defects were marked to obtain the first marked sample;

[0014] The defects in the first marked sample were observed using an optical microscope and the defect type was determined to obtain the second marked sample;

[0015] Contour analysis was performed on the defects of the second marked sample to obtain defect contour parameters;

[0016] Microscopic analysis was performed on the defects of the second labeled sample to obtain the microscopic morphology of the defects;

[0017] Component analysis was performed on the defects in the second labeled sample to obtain the defect components;

[0018] The nature of a defect is determined based on at least one of the following: defect profile parameters, defect micromorphology, and defect components.

[0019] The defect analysis method provided by this invention optimizes the defect analysis process for photochromic films, enabling systematic, efficient, and accurate location, identification, characterization, and root cause analysis of complex and diverse macroscopic and microscopic defects (such as scratches, halo spots, pinhole-like white spots, white spots, blue spots, irregularly shaped and discolored spots, etc.) on the surface of electrochromic films.

[0020] As a preferred technical solution of the present invention, the fading observation includes: placing the sample in front of a light source in a dark room for observation.

[0021] As a preferred technical solution of the present invention, the defects include: one or a combination of at least two of the following: halo spots, white spots, pinholes, discolored spots, or irregularly shaped spots.

[0022] As a preferred technical solution of the present invention, the defect categories include: protruding defects and dented defects.

[0023] As a preferred embodiment of the present invention, the defect contour parameters include: the depth or height of the defect.

[0024] As a preferred technical solution of the present invention, the micromorphology of the defect includes: the surface morphology and / or cross-section of the defect.

[0025] As a preferred technical solution of the present invention, the nature of the defect includes one or a combination of at least two of the following: contaminants, film damage, or phase structure differences.

[0026] In a second aspect, the present invention provides a defect analysis device for electrochromic thin films, the defect analysis device comprising:

[0027] The marking module is used to observe the fading of the sample in a dark room and mark defects to obtain the first marked sample;

[0028] The classification module is used to observe the defects in the obtained first marked sample using an optical microscope and determine the defect category to obtain the second marked sample;

[0029] The parameter module is used to perform contour analysis on the defects of the second marked sample and obtain the defect contour parameters.

[0030] The micro-module is used to perform microscopic analysis on the defects of the second labeled sample and obtain the microscopic morphology of the defects;

[0031] The component module is used to perform component analysis on the defects of the second labeled sample and obtain the defect components;

[0032] The judgment module is used to determine the nature of the defect based on at least one of the defect profile parameters, defect micromorphology, and defect components.

[0033] Thirdly, the present invention provides an electronic device comprising: at least one processor; and a memory communicatively connected to the at least one processor; wherein the memory stores a computer program executable by the at least one processor, the computer program being executed by the at least one processor to enable the at least one processor to perform the defect analysis method for the electrochromic thin film according to the first aspect.

[0034] Fourthly, the present invention provides a computer storage medium storing computer-executable instructions, which, when executed by a processor, implement the defect analysis method for the electrochromic thin film described in the first aspect.

[0035] Compared with existing technical solutions, the present invention has the following beneficial effects:

[0036] (1) This invention provides a systematic and standardized analysis process that filters from macro to micro levels, improving the accuracy and efficiency of analysis.

[0037] (2) The defect analysis method provided by the present invention integrates macroscopic and microscopic, two-dimensional and three-dimensional morphological analysis methods, quantitatively characterizes the physical size of defects in multiple dimensions, realizes the observation of the surface morphology and internal structure of defects, and provides an intuitive and effective way to overcome the problem of internal structure analysis for defect root cause analysis.

[0038] (3) The defect analysis method provided by the present invention ultimately forms an integrated analysis solution of "morphology-structure-composition", which can quickly and accurately determine the root cause of defects and guide the optimization of production process. Attached Figure Description

[0039] Figure 1 This is a flowchart of a defect analysis method for electrochromic thin films provided in an embodiment of the present invention;

[0040] Figure 2 This is a schematic diagram of a defect analysis device for electrochromic thin films provided in an embodiment of the present invention;

[0041] Figure 3 This is a schematic diagram of an electronic device provided in an embodiment of the present invention.

[0042] In the picture:

[0043] 100 - Marker module, 200 - Category module, 300 - Parameter module, 400 - Microscopic module, 500 - Composition module, 600 - Judgment module;

[0044] 10-Electronic device, 11-Processor, 12-ROM, 13-RAM, 14-Bus, 15-I / O interface, 16-Input unit, 17-Output unit, 18-Storage unit, 19-Communication unit.

[0045] The present invention will now be described in further detail. However, the examples described below are merely simplified examples of the present invention and do not represent or limit the scope of protection of the present invention. The scope of protection of the present invention is determined by the claims. Detailed Implementation

[0046] To better illustrate the present invention and facilitate understanding of its technical solutions, typical but non-limiting embodiments of the present invention are as follows:

[0047] Currently, existing technologies lack a comprehensive analysis process, leading to the following problems that urgently need to be addressed: (1) There are many types of defects with similar shapes, making it difficult to accurately distinguish and classify them by visual inspection alone. (2) It is impossible to quickly obtain the three-dimensional morphology (such as depth, protrusion / concavity) and composition information of defects, making it difficult to determine the nature of the defects (whether they are contaminants, film damage, or phase structure differences). (3) For fatal defects that penetrate the film layer (such as pinholes), there is a lack of effective means to analyze their depth structure and interface information, making process tracing difficult. (4) The analysis process is inefficient and costly, and there is no step-by-step focusing process from macro to micro, wasting a lot of time and resources. Based on this, this invention optimizes the defect analysis process for photochromic films to achieve systematic, efficient, and accurate location, identification, characterization, and root cause analysis of complex and diverse macro and micro defects (such as scratches, halo spots, pinhole-like white spots, white spots, blue spots, irregularly shaped and discolored spots, etc.) on the surface of electrochromic films, as detailed below:

[0048] I. This embodiment provides a defect analysis method for electrochromic thin films, such as... Figure 1 As shown, the defect analysis method includes:

[0049] The sample was observed to fade in a dark room and defects were marked to obtain the first marked sample;

[0050] The defects in the first marked sample were observed using an optical microscope and the defect type was determined to obtain the second marked sample;

[0051] Contour analysis was performed on the defects of the second marked sample to obtain defect contour parameters;

[0052] Microscopic analysis was performed on the defects of the second labeled sample to obtain the microscopic morphology of the defects;

[0053] Component analysis was performed on the defects in the second labeled sample to obtain the defect components;

[0054] The nature of a defect is determined based on at least one of the following: defect profile parameters, defect micromorphology, and defect components.

[0055] For example, taking white spots as an example, during the observation of fading, white spot marks are found on the film surface with black dot-like nuclei in the center. Mark the defect with a marker or other marker pen, and then observe it with instruments such as an optical microscope, laser microscope or profilometer. The marker pen or other markings help to accurately locate the position of the defect. At this time, a preliminary judgment can be made based on the morphology of the defect. If the cause of the defect cannot be confirmed, further testing is required.

[0056] For example, scanning electron microscopy (SEM) and dual-beam electron microscopy (FIB) can be used to further observe the defect area. If it is a protrusion, energy dispersive spectroscopy (EDS) can be used to analyze the composition of the defect location without damaging the original sample; alternatively, the protrusion can be removed and subjected to energy dispersive spectroscopy, mass spectrometry, or X-ray diffraction (XRD) to confirm the defect composition. If it is a depression, energy dispersive spectroscopy (EDS) can be used to observe the film surface, but this method has errors. The optimal method is to use dual-beam electron microscopy (FIB) to cut the defect area, observe the cross-section of the defect area, determine whether there is a film defect, and pinpoint the cause of the defect.

[0057] The fading observation includes: placing the sample in front of a light source in a dark room for observation.

[0058] The defects include one or a combination of at least two of the following: halo spots, white spots, pinholes, discolored spots, or irregularly shaped spots.

[0059] In this invention, a halo point refers to an uncolored dot-shaped or circular defect that appears during the coloring of an electrochromic thin film. This defect often has a white spot at its center, leading to large or small areas of uncolored areas. This defect is often caused by a connection between the upper and lower conductive layers. Common causes include substrate cleaning failure resulting in contaminants on the substrate, leading to the subsequent shedding of the overlay film. If the entire upper film layer detaches, pinholes can be reached. Halo defects can also occur if the film detaches before the conductive layer is deposited or if debris remains during detachment. Furthermore, if active metals such as silver or aluminum are present on the substrate or film surface, they can diffuse throughout the entire film layer, causing vertical conductivity and consequently resulting in a halo defect.

[0060] In this invention, white spots are described as pinhole-like white spots / white spots / white patches. Some white spots resemble pinholes or small halo defects in shape and are difficult to distinguish with the human eye; therefore, white spots are grouped together here. Besides the complete film layer detachment mentioned above, this type of defect may also be caused by damage or defects in the substrate itself. Furthermore, another major cause of pinholes and white spots is surface contaminants on the film layer, which are rich in fine ions such as Na, Mg, and K. These ions may, after being heated, move through the film layer, filling gaps in the film layer, especially the ion-conducting layer, blocking the movement of electrolyte ions, thus causing film layer failure and resulting in pinholes. Additionally, film layer detachment due to debris or contaminants within the chamber, especially the loss of the electrochromic layer and conductive layer, is also a major cause of vacuum defects. Moreover, if the film layer structure is loose, detachment may occur during production due to excessive humidity or prolonged exposure time, or white spots may also be caused by poor machine cleanliness or scratches caused by personnel during transport.

[0061] In this invention, discolored spots, such as blue spots or irregularly shaped spots, are often caused by contaminants adhering to the conductive layer. If the contaminants are rich in fine ions such as Na, Mg, and K, they may move faster than electrolyte ions when electricity is applied, causing the film layer to be colored first at that location. In addition, electrolyte ions may agglomerate or oxidize and become inactive during coating or after electricity is applied, resulting in dot-like defects that do not change color.

[0062] In this invention, an optical microscope can be used to preliminarily determine whether a defect is a protrusion or a depression. If it is higher than the film layer, it is a protrusion; if it forms a groove on the film layer, it is a depression, and so on. Then, scanning electron microscope (SEM), focused ion beam (FIB), energy dispersive spectroscopy (EDS) and other equipment are used to detect the surface morphology, cross-section and composition of the defect.

[0063] In this invention, for defects where abnormal protrusions or depressions cannot be seen on the surface, manual cutting and grinding can be used to remove the defect cross-section, followed by observation using an optical microscope or scanning electron microscope. However, this method carries certain risks, as it can easily damage the original appearance of the defect, leading to detection failure.

[0064] In this invention, for protrusions observable under a microscope, tools such as knives / tape can be used to remove the surface protrusions, and the depth and morphology can be measured to determine the location of the defect. This method is more suitable for preliminary judgment of whether it is a shallow deposit on the film layer. If the protrusion can be easily removed and no obvious depression is seen on the film surface after removal, it can be proven that the defect originated from a post-coating process. The disadvantage of this method is that if the product has a multi-layer coating and the film layer is thick, it is not easy to determine the specific location of the defect, which may lead to misjudgment.

[0065] In this invention, for three-dimensional stereoscopic imaging, equipment such as ellipsometers, profilometers, AFM, confocal microscopes, and laser microscopes can be used for assistance.

[0066] The defect categories include: protruding defects and dented defects.

[0067] The defect contour parameters include the depth or height of the defect.

[0068] The micromorphology of the defect includes: the surface morphology and / or cross-section of the defect.

[0069] The nature of the defect includes one or a combination of at least two of the following: contaminants, film damage, or phase structure differences.

[0070] The core of this invention lies in the multi-dimensional and multi-technology combined approach, and the systematic process concept that integrates macroscopic and microscopic perspectives, rather than being completely confined to a specific device or method. The step-by-step, iterative verification analysis process design of "macroscopic → microscopic → three-dimensional morphology → structure → composition" is a manifestation of its systematic nature. The comprehensive interpretation model of multi-source data, that is, how to associate and map morphological, compositional, and structural information to specific production process problems, is the ultimate means to solve in-depth structural problems.

[0071] In this invention, "color observation" serves as the starting point for highlighting and locating defects, utilizing the intrinsic properties of electrochromic materials, and is the beginning of quality control. Although defects may appear similar and have complex causes, the causes can be quickly determined based on existing experience and convenient, low-cost methods, thereby strengthening the control of each process and reducing and resolving defects.

[0072] The analytical methods and processes of this invention range from macroscopic to microscopic, involving precision microscopic instruments such as scanning electron microscopes (SEM), fibrillated ion beam (FIB), energy dispersive spectrometers (EDS), ellipsometers, profilometers, atomized radiometers (AFM), confocal microscopes, and laser microscopes. They also retain direct, convenient, and low-cost methods such as manual cutting, scraping, and manual grinding, directly targeting the center of defects and presenting the invention's essence and core advantages of "multi-scale, step-by-step in-depth, and comprehensive judgment".

[0073] II. This embodiment provides a defect analysis device for electrochromic thin films, such as... Figure 2 As shown, the defect analysis device includes:

[0074] The marking module 100 is used to observe the fading of the sample in a dark room and mark defects to obtain the first marked sample;

[0075] The classification module 200 is used to observe the defects in the obtained first marked sample using an optical microscope and determine the defect category to obtain the second marked sample;

[0076] The parameter module 300 is used to perform contour analysis on the defects of the second marked sample and obtain the defect contour parameters.

[0077] Microscopic module 400 is used to perform microscopic analysis on defects in the second labeled sample and obtain the microscopic morphology of the defects;

[0078] The component module 500 is used to perform component analysis on the defects of the second labeled sample and obtain the defect components;

[0079] The judgment module 600 is used to judge the nature of the defect based on at least one of the defect profile parameters, defect micromorphology and defect components.

[0080] Regarding the apparatus in the above embodiments, the specific manner in which each module performs its operation has been described in detail in the embodiments related to the method, and will not be elaborated upon here.

[0081] III. This embodiment provides an electronic device intended to represent various forms of digital computers, such as laptop computers, desktop computers, workstations, personal digital assistants, servers, blade servers, mainframe computers, and other suitable computers. The electronic device may also represent various forms of mobile devices, such as personal digital processors, cellular phones, smartphones, wearable devices (e.g., helmets, glasses, watches, etc.), and other similar computing devices. The components shown herein, their connections and relationships, and their functions are merely illustrative and are not intended to limit the implementation of the invention described and / or claimed herein.

[0082] like Figure 3 As shown, the electronic device 10 includes at least one processor 11 and a memory, such as a read-only memory (ROM) 12 or a random access memory (RAM) 13, communicatively connected to the at least one processor 11. The memory stores computer programs executable by the at least one processor. The processor 11 can perform various appropriate actions and processes based on the computer program stored in the ROM 12 or loaded into the RAM 13 from storage unit 18. The RAM 13 can also store various programs and data required for the operation of the electronic device 10. The processor 11, ROM 12, and RAM 13 are interconnected via a bus 14. An I / O interface 15 is also connected to the bus 14.

[0083] Multiple components in electronic device 10 are connected to I / O interface 15, including: input unit 16, such as keyboard, mouse, etc.; output unit 17, such as various types of displays, speakers, etc.; storage unit 18, such as disk, optical disk, etc.; and communication unit 19, such as network card, modem, wireless transceiver, etc. Communication unit 19 allows electronic device 10 to exchange information / data with other devices through computer networks such as the Internet and / or various telecommunications networks.

[0084] Processor 11 can be a variety of general-purpose and / or special-purpose processing components with processing and computing capabilities. Some examples of processor 11 include, but are not limited to, a central processing unit (CPU), a graphics processing unit (GPU), various special-purpose artificial intelligence (AI) computing chips, various processors running machine learning model algorithms, a digital signal processor (DSP), and any suitable processor, controller, microcontroller, etc. Processor 11 performs the various methods and processes described above, such as the defect analysis method for electrochromic thin films.

[0085] In some embodiments, the defect analysis method for electrochromic films can be implemented as a computer program tangibly contained in a computer-readable storage medium, such as storage unit 18. In some embodiments, part or all of the computer program can be loaded and / or mounted on electronic device 10 via ROM 12 and / or communication unit 19. When the computer program is loaded into RAM 13 and executed by processor 11, one or more steps of the defect analysis method for electrochromic films described above can be performed. Alternatively, in other embodiments, processor 11 can be configured to perform the defect analysis method for electrochromic films by any other suitable means (e.g., by means of firmware).

[0086] Various embodiments of the systems and techniques described above herein can be implemented in digital electronic circuit systems, integrated circuit systems, field-programmable gate arrays (FPGAs), application-specific integrated circuits (ASICs), application-specific standard products (ASSPs), systems-on-a-chip (SoCs), payload-programmable logic devices (CPLDs), computer hardware, firmware, software, and / or combinations thereof. These various embodiments may include implementations in one or more computer programs that can be executed and / or interpreted on a programmable system including at least one programmable processor, which may be a dedicated or general-purpose programmable processor, capable of receiving data and instructions from a storage system, at least one input device, and at least one output device, and transmitting data and instructions to the storage system, the at least one input device, and the at least one output device.

[0087] Computer programs used to implement the methods of the present invention may be written in any combination of one or more programming languages. These computer programs may be provided to a processor of a general-purpose computer, a special-purpose computer, or other programmable data processing device, such that when executed by the processor, the computer programs cause the functions / operations specified in the flowcharts and / or block diagrams to be performed. The computer programs may be executed entirely on a machine, partially on a machine, or as a standalone software package, partially on a machine and partially on a remote machine, or entirely on a remote machine or server.

[0088] In the context of this invention, a computer-readable storage medium can be a tangible medium that may contain or store a computer program for use by or in conjunction with an instruction execution system, apparatus, or device. A computer-readable storage medium may include, but is not limited to, electronic, magnetic, optical, electromagnetic, infrared, or semiconductor systems, apparatus, or devices, or any suitable combination thereof. Alternatively, a computer-readable storage medium may be a machine-readable signal medium. More specific examples of machine-readable storage media include electrical connections based on one or more wires, portable computer disks, hard disks, random access memory (RAM), read-only memory (ROM), erasable programmable read-only memory (EPROM or flash memory), optical fibers, portable compact disk read-only memory (CD-ROM), optical storage devices, magnetic storage devices, or any suitable combination thereof.

[0089] To provide interaction with a user, the systems and techniques described herein can be implemented on an electronic device having: a display device (e.g., a CRT (cathode ray tube) or LCD (liquid crystal display) monitor) for displaying information to the user; and a keyboard and pointing device (e.g., a mouse or trackball) through which the user provides input to the electronic device. Other types of devices can also be used to provide interaction with the user; for example, feedback provided to the user can be any form of sensory feedback (e.g., visual feedback, auditory feedback, or tactile feedback); and input from the user can be received in any form (including sound input, voice input, or tactile input).

[0090] The systems and technologies described herein can be implemented in computing systems that include backend components (e.g., as data servers), or middleware components (e.g., application servers), or frontend components (e.g., user computers with graphical user interfaces or web browsers through which users can interact with implementations of the systems and technologies described herein), or any combination of such backend, middleware, or frontend components. The components of the system can be interconnected via digital data communication of any form or medium (e.g., communication networks). Examples of communication networks include local area networks (LANs), wide area networks (WANs), blockchain networks, and the Internet.

[0091] A computing system can include clients and servers. Clients and servers are generally located far apart and typically interact through communication networks. The client-server relationship is created by computer programs running on the respective computers and having a client-server relationship with each other. The server can be a cloud server, also known as a cloud computing server or cloud host, which is a hosting product within the cloud computing service system to address the shortcomings of traditional physical hosts and VPS services, such as high management difficulty and weak business scalability.

[0092] The server provided in this embodiment includes: a memory, a processor, and a computer program stored in the memory and executable on the processor. When the processor executes the program, it implements a defect analysis method for electrochromic thin films.

[0093] Unless otherwise specifically stated, terms such as processing, calculation, operation, determination, display, etc., may refer to the actions and / or processes of one or more processing or computing systems or similar devices that represent the manipulation and conversion of data representing physical (e.g., electronic) quantities within the registers or memory of the processing system into other data similarly representing physical quantities within the memory, registers, or other such information storage, transmission, or display devices of the processing system. Information and signals can be represented using any of a variety of different techniques and methods. For example, data, instructions, commands, information, signals, bits, symbols, and chips mentioned throughout the above description can be represented by voltage, current, electromagnetic waves, magnetic fields or particles, light fields or particles, or any combination thereof.

[0094] Those skilled in the art will also understand that the various illustrative logic blocks, modules, circuits, and algorithm steps described in conjunction with embodiments of the present invention can all be implemented as electronic hardware, computer software, or a combination thereof. To clearly illustrate the interchangeability between hardware and software, the various illustrative components, blocks, modules, circuits, and steps described above are generally described in terms of their functionality. Whether this functionality is implemented as hardware or software depends on the specific application and the design constraints imposed on the overall system. Those skilled in the art can implement the described functionality in alternative ways for each specific application; however, such implementation decisions should not be construed as departing from the scope of protection of the present invention.

[0095] The steps of the methods or algorithms described in conjunction with the embodiments herein can be directly embodied in hardware, software modules executed by a processor, or a combination thereof. The software modules can reside in RAM memory, flash memory, ROM memory, EPROM memory, EEPROM memory, registers, hard disks, removable disks, CD-ROMs, or any other form of storage medium well known in the art. An exemplary storage medium is connected to the processor, enabling the processor to read information from and write information to the storage medium. Of course, the storage medium can also be a component of the processor. The processor and storage medium can reside in an ASIC. The ASIC can reside in a user terminal. Alternatively, the processor and storage medium can exist as discrete components in the user terminal.

[0096] For software implementation, the techniques described in this invention can be implemented using modules (e.g., procedures, functions, etc.) that perform the functions described in this application. This software code can be stored in memory units and executed by a processor. The memory units can be implemented within the processor or externally; in the latter case, they are communicatively coupled to the processor via various means, as is well known in the art.

[0097] The present invention is described in detail through the above embodiments, but the present invention is not limited to the above detailed structural features, that is, it does not mean that the present invention must rely on the above detailed structural features to be implemented. Those skilled in the art should understand that any improvements to the present invention, equivalent substitutions for the components used in the present invention, additions of auxiliary components, and selection of specific methods, etc., all fall within the protection scope and disclosure scope of the present invention.

[0098] The preferred embodiments of the present invention have been described in detail above. However, the present invention is not limited to the specific details in the above embodiments. Within the scope of the technical concept of the present invention, various simple modifications can be made to the technical solution of the present invention, and these simple modifications all fall within the protection scope of the present invention.

[0099] It should also be noted that the various specific technical features described in the above specific embodiments can be combined in any suitable manner without contradiction. In order to avoid unnecessary repetition, the present invention will not describe the various possible combinations separately.

[0100] Furthermore, various different embodiments of the present invention can be combined in any way, as long as they do not violate the spirit of the present invention, they should also be regarded as the content disclosed by the present invention.

Claims

1. A defect analysis method for electrochromic thin films, characterized in that, The defect analysis method includes: The sample was observed to fade in a dark room and defects were marked to obtain the first marked sample; The defects in the first marked sample were observed using an optical microscope and the defect type was determined to obtain the second marked sample; Contour analysis was performed on the defects of the second marked sample to obtain defect contour parameters; Microscopic analysis was performed on the defects of the second labeled sample to obtain the microscopic morphology of the defects; Component analysis was performed on the defects in the second labeled sample to obtain the defect components; The nature of a defect is determined based on at least one of the following: defect profile parameters, defect micromorphology, and defect components.

2. The defect analysis method as described in claim 1, characterized in that, The fading observation includes: placing the sample in front of a light source in a dark room for observation.

3. The defect analysis method as described in claim 1, characterized in that, The defects include one or a combination of at least two of the following: halo spots, white spots, pinholes, discolored spots, or irregularly shaped spots.

4. The defect analysis method as described in claim 1, characterized in that, The defect categories include: raised defects and recessed defects.

5. The defect analysis method as described in claim 1, characterized in that, The defect profile parameters include the depth or height of the defect.

6. The defect analysis method as described in claim 1, characterized in that, The micromorphology of the defect includes: the surface morphology and / or cross-section of the defect.

7. The defect analysis method as described in claim 1, characterized in that, The nature of the defect includes one or a combination of at least two of the following: contaminants, film damage, or phase structure differences.

8. A defect analysis device for electrochromic thin films, characterized in that, The defect analysis device includes: The marking module is used to observe the fading of the sample in a dark room and mark defects to obtain the first marked sample; The classification module is used to observe the defects in the obtained first marked sample using an optical microscope and determine the defect category to obtain the second marked sample; The parameter module is used to perform contour analysis on the defects of the second marked sample and obtain the defect contour parameters. The micro-module is used to perform microscopic analysis on the defects of the second labeled sample and obtain the microscopic morphology of the defects; The component module is used to perform component analysis on the defects of the second labeled sample and obtain the defect components; The judgment module is used to determine the nature of the defect based on at least one of the defect profile parameters, defect micromorphology, and defect components.

9. An electronic device, characterized in that, The electronic device includes: At least one processor; and a memory communicatively connected to said at least one processor; The memory stores a computer program that can be executed by the at least one processor, which is then executed by the at least one processor to enable the at least one processor to perform the defect analysis method for the electrochromic thin film according to any one of claims 1-7.

10. A computer storage medium, characterized in that, The computer storage medium stores computer-executable instructions, which, when executed by a processor, implement the defect analysis method for the electrochromic thin film according to any one of claims 1-7.