Detector of polychromator, polychromator, plasma diagnosis system and fusion reaction system

Abstract

The utility model provides a detector of a polychromator, the polychromator, a plasma diagnosis system and a fusion reaction system.The detector comprises a first circuit board and a second circuit board, the first circuit board is fixedly provided with a photodiode and an amplifying circuit, the second circuit board is fixedly provided with a temperature control circuit, and the photodiode is integrated with a thermistor and a thermoelectric cooler; the output end of the photodiode is connected with the input end of the amplifying circuit; the thermistor and the thermoelectric cooler are electrically connected with the temperature control circuit through wires. By optimizing the circuit layout, the accuracy and stability of signal detection are remarkably improved, the problem that the quality of an amplified electric signal on an amplifying circuit is reduced due to electromagnetic interference and thermal noise is solved, and the accuracy of plasma electron temperature and electron density measurement is improved.

Description

Technical Field

[0001] This application relates to the field of power electronics technology, and in particular to a detector for a polychromator, a polychromator, a plasma diagnostic system, and a fusion reaction system. Background Technology

[0002] With the in-depth development of plasma physics research, plasma diagnostic systems have been widely used as an important plasma diagnostic measurement tool. For example, based on the phenomenon of electrons scattering electromagnetic waves in plasma, key parameters such as the electron temperature Te and electron density ne of the plasma can be calculated by measuring the frequency and intensity changes of the scattered light. In the detectors of the polychromator in the plasma diagnostic system, high-sensitivity photodiodes can effectively detect weak electrical signals, meeting the operating conditions of the polychromator.

[0003] Currently, after a high-sensitivity photodiode acquires an electrical signal, it needs to be amplified by an amplifier circuit to enhance the weak signal. Furthermore, because high-sensitivity photodiodes have strict requirements for operating temperature, a temperature control circuit is often required for their operation.

[0004] However, for compactness reasons, the amplifier circuit and temperature control circuit are usually mounted on the same circuit board. When the temperature control circuit and the amplifier circuit are close together, the large current generated by the temperature control circuit will cause common coupling with the amplifier circuit, affecting the normal operation of the amplifier circuit. Furthermore, the heat generated will introduce significant thermal noise, degrading the information quality of the amplified electrical signal output by the amplifier circuit. Therefore, there is an urgent need for a high-precision detector for a multicolor instrument. Utility Model Content

[0005] This application provides a detector for a multicolor instrument, a multicolor instrument, a plasma diagnostic system, and a fusion reaction system. By optimizing the circuit layout, it significantly improves the accuracy and stability of signal detection, solves the problem of reduced quality of amplified electrical signals in the amplification circuit due to electromagnetic interference and thermal noise, and improves the accuracy of plasma electron temperature Te and electron density ne measurements.

[0006] According to one aspect of the embodiments of this application, a detector for a multicolor instrument is provided. The detector includes a first circuit board with a photodiode and an amplification circuit fixed thereon, and a second circuit board with a temperature control circuit fixed thereon. The photodiode integrates a thermistor and a thermoelectric cooler.

[0007] The output terminal of the photodiode is connected to the input terminal of the amplifier circuit;

[0008] The thermistor and thermoelectric cooler are electrically connected to the temperature control circuit via wires.

[0009] According to another aspect of the embodiments of this application, a polychromator is provided, the polychromator including a lens tube assembly, the lens tube assembly including the detector described above.

[0010] According to another aspect of the embodiments of this application, a plasma diagnostic system is provided, which includes the polychromator described above.

[0011] According to another aspect of the embodiments of this application, a fusion reaction system is provided, which includes a nuclear fusion reactor and the plasma diagnostic system described above.

[0012] The detector of the multicolor instrument provided in this application includes a first circuit board with a photodiode and an amplifier circuit fixed thereon, and a second circuit board with a temperature control circuit fixed thereon. The photodiode integrates a thermistor and a thermoelectric cooler. The output terminal of the photodiode is connected to the input terminal of the amplifier circuit. The thermistor and the thermoelectric cooler are electrically connected to the temperature control circuit through wires.

[0013] By separating the amplification circuit and the temperature control circuit onto two independent circuit boards, the coupling noise and thermal noise impact of the temperature control circuit on the amplification circuit are significantly reduced, thereby improving the quality of the amplified electrical signal. Simultaneously, electrically connecting the thermistor and thermoelectric cooler to the temperature control circuit via wires ensures the stability of signal transmission, allowing the temperature control circuit to stably control the operating temperature of the photodiode. This guarantees the accuracy and stability of electrical signal detection, thereby improving the detector's precision. Attached Figure Description

[0014] Figure 1 This is a schematic diagram of the detector structure of a polychromator provided in one embodiment of this application;

[0015] Figure 2 This is a circuit diagram of the amplification circuit in the detector of a polychromator provided in one embodiment of this application;

[0016] Figure 3 This is a circuit diagram of the temperature control circuit in the detector of a multicolor instrument according to an embodiment of this application;

[0017] Figure 4 This is a schematic diagram of the structure of a multicolor instrument provided in one embodiment of this application;

[0018] Figure 5 This is a structural diagram of a multicolor instrument provided in one embodiment of this application;

[0019] Figure 6 This is a schematic diagram of the structure of a plasma diagnostic system provided in one embodiment of this application;

[0020] Figure 7 This is a schematic diagram of the structure of a fusion reaction system provided in an embodiment of this application. Detailed Implementation

[0021] Many specific details are set forth in the following description to provide a full understanding of this application. However, this application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar extensions without departing from the spirit of this application; therefore, this application is not limited to the specific embodiments disclosed below.

[0022] The terminology used in one or more embodiments of this application is for the purpose of describing particular embodiments only and is not intended to limit the scope of the one or more embodiments of this application. The singular forms “a,” “the,” and “the” used in one or more embodiments of this application and the appended claims are also intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that the term “and / or” used in one or more embodiments of this application refers to and includes any or all possible combinations of one or more associated listed items. The term “at least one” in one or more embodiments of this application means “one or more,” and “a plurality of” means “two or more.” The term “comprising” is an open-ended description and should be understood as “including but not limiting,” and may include other content in addition to what has been described.

[0023] It should be understood that although the terms "first," "second," etc., may be used to describe various information in one or more embodiments of this application, such information should not be limited to these terms. These terms are only used to distinguish information of the same type from one another. For example, "first" may also be referred to as "second" without departing from the scope of one or more embodiments of this application, and similarly, "second" may also be referred to as "first." Depending on the context, the word "if," as used herein, may be interpreted as "when," "in response to a determination," or "when," or "in the event of a determination."

[0024] First, the terms and concepts involved in one or more embodiments of this application will be explained.

[0025] Plasma: A thermodynamic state of matter, often referred to as the fourth state of matter. It consists of a large number of free electrons and ionized atoms, is electrically neutral overall but has high conductivity and the ability to respond to electromagnetic fields. At extremely high temperatures, atoms in a gas can be ionized into free electrons and positive ions; this state is commonly found inside stars, in lightning, and under certain types of laboratory conditions.

[0026] Thomson scattering: a phenomenon based on the scattering of electromagnetic waves by electrons in plasma. It is a process in which electromagnetic wave photons collide elastically with free electrons. In this process, the energy of the photons is not absorbed but changes their direction of motion.

[0027] Thomson scattering diagnostic system: A plasma diagnostic system that uses the Thomson scattering principle to measure plasma parameters such as temperature and density. This system typically includes one or more lasers to generate high-energy beams that enter the plasma and scatter with free electrons within it. By detecting changes in the direction and frequency of the scattered light, key parameters such as the electron temperature Te and electron density ne within the plasma can be inferred.

[0028] A polychromator is a spectrophotometer that can decompose polychromatic light into monochromatic light and accurately measure the intensity of light at each wavelength. In nuclear fusion research, polychromators are used to collect and analyze the spectra of light beams emitted from plasma.

[0029] An avalanche photodiode (APD) is a highly sensitive photodetector capable of effective photon detection even with extremely weak light signals. APDs amplify the photocurrent generated by incident photons by utilizing the avalanche multiplication effect. During avalanche multiplication, photogenerated carriers gain sufficient energy in a high electric field region, colliding with and ionizing other atoms to generate more electron-hole pairs, thus amplifying the current through an "avalanche." Due to its high gain, fast response, and excellent signal-to-noise ratio, avalanche photodiodes are widely used in applications requiring precise measurement of weak light signals, such as laser ranging, fiber optic communication, and plasma diagnostic systems in plasma physics research. Compared to ordinary photodiodes, avalanche photodiodes can operate at lower light intensities and provide higher sensitivity and more accurate measurement results.

[0030] Sub-Miniature version A connector (SMA terminal): A commonly used RF connector suitable for applications requiring high-frequency signal transmission. They are typically used to connect cables to circuit boards or as antenna interfaces, and are very common in communications, test equipment, and various wireless technology applications. SMA connectors are favored for their good performance, compact size, and reliability, especially excelling in the frequency range up to 18 GHz.

[0031] Nuclear fusion: Nuclear fusion refers to the process by which the nuclei of lighter elements combine to form heavier elements under high temperature and pressure, releasing a large amount of energy. Unlike fission, fusion does not produce long-lasting radioactive waste, and its fuel sources are widely available (such as the hydrogen isotopes deuterium and tritium in seawater). Nuclear fusion is the energy source for the sun and other stars to shine and generate heat, and it is also one of the clean energy sources that humanity is pursuing.

[0032] Nuclear fusion reactor: A device used to realize and control nuclear fusion reactions, fusing lighter elemental particles (such as hydrogen isotopes deuterium and tritium) into heavier elemental particles under high temperature and pressure conditions, releasing a large amount of energy. A nuclear fusion reactor typically includes the following key components: 1. Nuclear fusion vacuum reactor: Contains and maintains the plasma state under high temperature and pressure, making it suitable for nuclear fusion reactions. 2. Heating system: Heats the lighter elemental particles, such as through radio frequency heating or neutral beam injection. 3. Magnetic confinement device: Uses a strong magnetic field to confine the plasma, preventing it from directly contacting the inner wall of the vacuum reactor chamber, such as a tokamak or stellarator. 4. Diagnostic system: Includes a plasma diagnostic system, which monitors plasma state parameters in real time, such as temperature, density, and stability, thereby providing a basis for adjusting experimental parameters and ensuring optimized reaction conditions.

[0033] Tokamak device: A tokamak is a magnetic confinement device specifically designed for controlled nuclear fusion experiments. It uses a powerful toroidal or spherical magnetic field and helical twisted coils to confine high-temperature plasma, preventing it from directly contacting the walls of the vacuum reactor chamber. The powerful magnetic field generated inside the tokamak device effectively keeps the plasma in a stable orbit.

[0034] Stellarator Device: A stellarator is a magnetic confinement device different from a tokamak. It generates a twisted three-dimensional magnetic field structure through a complex coil configuration to stabilize and confine plasma. Compared to a tokamak, a stellarator does not require current to maintain plasma stability, which reduces problems caused by current fluctuations.

[0035] Currently, in the detectors of multicolor analyzers in plasma diagnostic systems, high-sensitivity photodiodes serve as crucial optical detection elements, and their performance is closely related to operating temperature. Specifically, temperature fluctuations significantly alter the gain characteristics and dark current levels of high-sensitivity photodiodes, negatively impacting the accuracy and stability of optical detection and severely limiting the overall performance of the optical detection system. Currently, high-sensitivity photodiodes integrated with thermistors and thermoelectric coolers are available to form temperature control systems, achieving constant temperature control of the photodiode through corresponding circuit designs on the lead-out pins. However, traditional multicolor analyzer high-sensitivity photodiode application circuits either lack effective temperature control due to size limitations or have limited effectiveness despite having temperature control measures; most designs integrate the high-sensitivity photodiode temperature control with the amplification circuit.

[0036] Because temperature control circuits typically employ thermoelectric cooling, they generate significant current. This current is highly susceptible to common coupling with the high-sensitivity photodiode amplifier circuit, interfering with its normal operation. Simultaneously, the heating of the thermoelectric cooling resistors on a single circuit board introduces significant thermal noise, further degrading signal quality and reducing the sensitivity and accuracy of photodetection. This makes it difficult to meet the stringent stability and accuracy requirements of high-precision photodetection systems. Therefore, it is necessary to design a novel circuit structure capable of precisely controlling the operating temperature of the high-sensitivity photodiode to ensure its performance stability; while also possessing excellent amplification performance to meet signal processing needs. Furthermore, from a practical application perspective, the overall circuit structure should be as compact as possible to accommodate diverse device integration requirements; and through optimized design, it should be ensured that there is no common coupling interference between the high-sensitivity photodiode amplifier circuit and the temperature control circuit, thus providing a reliable, stable, and efficient solution for high-precision photodetection systems.

[0037] This application provides a detector for a multicolor instrument, a multicolor instrument, a plasma diagnostic system, and a fusion reaction system. By optimizing the circuit layout, it significantly improves the accuracy and stability of signal detection, solves the problem of reduced quality of amplified electrical signals in the amplification circuit due to electromagnetic interference and thermal noise, and improves the accuracy of plasma electron temperature Te and electron density ne measurements.

[0038] Figure 1 The diagram shows a structural schematic of a detector for a multicolor instrument according to an embodiment of this application. The detector 100 includes a first circuit board 110 with a photodiode 1110 and an amplifier circuit 1120 fixed thereon, and a second circuit board 120 with a temperature control circuit 1210 fixed thereon. The photodiode 1110 integrates a thermistor 11110 and a thermoelectric cooler 11120.

[0039] The output terminal of photodiode 1110 is connected to the input terminal of amplifier circuit 1120;

[0040] Thermistor 11110 and thermoelectric cooler 11120 are electrically connected to temperature control circuit 1210 via wires.

[0041] Detector 100 is a component that receives light of a specific wavelength passing through the exit slit. The selection of detector 100 depends on specific application requirements, such as sensitivity, response speed, and spectral range. Detector 100 measures the intensity of light of a specific wavelength passing through the exit slit, converts the optical signal into an electrical signal, and then amplifies and processes it through amplifier circuit 1120.

[0042] The first circuit board 110 is the substrate that carries the photodiode 1110 and the amplifier circuit 1120. It is typically made of a material with high thermal conductivity and low coefficient of thermal expansion to ensure the stability and reliability of the circuit. For example, an aluminum silicon carbide (AlSiC) composite substrate or an alumina ceramic substrate can be used, with a thermal conductivity ≥170 W / (m·K) and a coefficient of thermal expansion matching that of semiconductor devices (e.g., 6.5ppm / ℃), which can effectively reduce the impact of thermal stress on the performance of the photodiode 1110.

[0043] A photodiode 1110 is a semiconductor device that converts optical signals into electrical signals. The photodiode 1110 typically operates under reverse bias and generates current when illuminated. The photodiode 1110 operates based on the internal photoelectric effect, where an energetic photon strikes the diode, creating an electron-hole pair. These carriers separate under the influence of the built-in electric field in the depletion region, forming a photocurrent. For example, an avalanche photodiode 1110 can be used for nanosecond-level pulsed light signal detection.

[0044] The thermistor 11110 is a temperature-sensitive resistive element that can detect the operating temperature of the photodiode 1110 and transmit the temperature signal to the temperature control circuit 1210. For example, a negative temperature coefficient (NTC) thermistor 11110 can be used, such as a 5KΩ@25°C thermistor 11110 or a 43KΩ@-25°C thermistor 11110, to monitor the temperature change of the photodiode 1110.

[0045] The thermoelectric cooler 11120 is a device that utilizes the Peltier effect for cooling or heating, and temperature regulation can be achieved by changing the direction of the current. For example, using the thermoelectric cooler 11120 (Thermo-Electric Cooler, abbreviated as TEC), the maximum temperature difference ΔTmax = 68℃, the cooling power Qmax = 3.8 W, and when integrated with the photodiode 1110 package, a temperature control accuracy of ±0.1℃ can be achieved.

[0046] Amplifier circuit 1120 is an electronic circuit that increases the amplitude or power of an electrical signal, thereby amplifying a weak electrical signal. Amplifier circuit 1120 includes at least one operational amplifier. For example, a gain amplifier circuit 1120 employing a transimpedance amplifier (TIA) architecture includes an operational amplifier (OPA) with a gain-bandwidth product of 1.6 GHz, an input noise voltage of 4.8 nV / √Hz, and a transimpedance gain set to 10kΩ-1 MΩ, which can convert the nA-level photocurrent output by photodiode 1110 into multiple voltage signals.

[0047] The second circuit board 120 is the substrate that carries the temperature control circuit 1210. It is usually set separately from the first circuit board 110 to avoid the temperature control circuit 1210 interfering with the amplifier circuit 1120. For example, a copper-clad laminate is used, and a ferrite bead filter is built in to suppress high-frequency interference.

[0048] The temperature control circuit 1210 is an electronic circuit that controls the temperature of the photodiode 1110. By adjusting the operating state of the thermoelectric cooler 11120, the photodiode 1110 is kept within the target operating temperature range. For example, an integrated TEC controller is used, which supports bidirectional current output (±2.5 A) and has a temperature resolution of 0.01℃. It is connected to the corresponding pin of the photodiode 1110 using ordinary terminals.

[0049] The photodiode 1110 and the amplifier circuit 1120 are fixed on the first circuit board 110. One feasible method is to use through-hole soldering to solder the photodiode 1110 and the amplifier circuit 1120 onto the first circuit board 110. Another feasible method is to use surface mount to attach the photodiode 1110 and the amplifier circuit 1120 onto the first circuit board 110. Yet another feasible method is to use modular integration to mount the photodiode 1110 and the amplifier circuit 1120 onto the first circuit board 110. No limitation is made here.

[0050] The temperature control circuit 1210 is fixed on the second circuit board 120. One feasible method is to use through-hole soldering to solder the temperature control circuit 1210 onto the second circuit board 120. Another feasible method is to use surface mount to attach the temperature control circuit 1210 onto the second circuit board 120. Yet another feasible method is to use modular integration to install the temperature control circuit 1210 onto the second circuit board 120. No particular method is specified here.

[0051] The thermistor 11110 and thermoelectric cooler 11120 are integrated into the photodiode 1110. One feasible approach is to sinter the thermistor 11110 and thermoelectric cooler 11120 into the base of the photodiode 1110, for example, by using eutectic bonding (Au-Sn alloy) to achieve thermal coupling among the three. Another feasible approach is to mount the thermistor 11110 and thermoelectric cooler 11120 on the housing of the photodiode 1110. For example, a miniature thermistor 11110 is mounted by drilling a hole in the housing of the photodiode 1110, and the thermoelectric cooler 11120 is mounted by using silver epoxy resin. Yet another feasible approach is to use a multilayer ceramic structure to embed the thermistor 11110 and thermoelectric cooler 11120 in the base of the photodiode 1110. No further limitation is made here.

[0052] The thermistor 11110 and the thermoelectric cooler 11120 are electrically connected to the temperature control circuit 1210 via wires. One feasible method is to connect the thermistor 11110 pin and the thermoelectric cooler 11120 pin to the temperature control circuit 1210 on the second circuit board 120 via wires. Another feasible method is to use a flexible printed circuit (FPC) connector to interconnect the thermistor 11110 and the thermoelectric cooler 11120 with the temperature control circuit 1210 via wires. No limitation is made here.

[0053] In one embodiment, the first circuit board 110 and the second circuit board 120 adopt a separate structure. The first circuit board 110 and the second circuit board 120 can be the same size and design and placed side by side, which ensures the compactness and efficiency of the detector 100.

[0054] In this embodiment, by separating the amplification circuit 1120 and the temperature control circuit 1210 onto two independent circuit boards, the coupling noise and thermal noise impact of the temperature control circuit 1210 on the amplification circuit 1120 are significantly reduced, thereby improving the quality of the amplified electrical signal. Simultaneously, by electrically connecting the thermistor 11110 and the thermoelectric cooler 11120 to the temperature control circuit 1210 via wires, the stability of signal transmission is ensured. This allows the temperature control circuit 1210 to stably control the operating temperature of the photodiode 1110, guaranteeing the accuracy and stability of photoelectric signal detection, and thus improving the precision of the detector 100.

[0055] In one embodiment of this application, the first circuit board 110 is connected to a first power supply for power supply, and the second circuit board 120 is connected to a second power supply for power supply.

[0056] The first power supply provides stable, low-noise power to the photodiode 1110 and amplifier circuit 1120 on the first circuit board 110, and must meet high-precision power supply and electromagnetic compatibility requirements. For example, the first power supply, which introduces a ±5V supply voltage and the high-voltage bias voltage required by the photodiode 1110 through a pin, adopts a dual-output linear regulated power supply. One output provides ±5V (ripple <1 mV RMS) to power the operational amplifier of amplifier circuit 1120, and the other output provides an adjustable high-voltage bias of 100-500V (accuracy ±0.1%) for the reverse bias of avalanche photodiode 1110.

[0057] The second power supply provides a high-current drive to the temperature control circuit 1210 on the second circuit board 120, and features high efficiency and thermal management capabilities. For example, a second power supply with a 5V supply voltage can be introduced through a pin.

[0058] It should be noted that the two circuit boards are powered separately to avoid forming a loop. This ensures stable temperature control without affecting the performance of the amplifier circuit 1120, while keeping the package size of the 10 signal receiving channels of the multicolor instrument basically unchanged, thus ensuring effective signal amplification.

[0059] In this embodiment, the independently optimized power supply design not only ensures the low noise characteristics of the amplifier circuit 1120 on the first circuit board 110, but also meets the high-efficiency driving requirements of the temperature control circuit 1210 on the second circuit board 120. This allows the individual circuit boards to be more compact and effectively reduces mutual interference between different circuits, thereby improving overall performance.

[0060] In one embodiment of this application, the amplifier circuit 1120 includes a first operational amplifier and a second operational amplifier;

[0061] The output terminal of photodiode 1110 is connected to the inverting input terminal of the first operational amplifier, and the output terminal of the first operational amplifier is connected to the inverting input terminal of the second operational amplifier. The amplification gain of amplifier circuit 1120 is determined based on the amplification gain of the first operational amplifier and the amplification gain of the second operational amplifier.

[0062] The first operational amplifier is the operational amplifier of the first amplification stage in the amplifier circuit 1120. It amplifies the signal amplitude of the photoelectric signal output by the photodiode 1110 to obtain the first-stage amplified electrical signal. For example, the inverting input terminal of the first operational amplifier is connected to the cathode of the photodiode 1110, the non-inverting input terminal is grounded, and the output terminal is filtered by a capacitor (such as 100 nF) to eliminate high-frequency oscillations.

[0063] The second operational amplifier is the operational amplifier of the second amplification stage in the amplifier circuit 1120. It further increases the signal amplitude of the first-stage amplified electrical signal output from the first operational amplifier to obtain the second-stage amplified electrical signal output from the amplifier circuit 1120. For example, the inverting input terminal of the second operational amplifier receives the first-stage electrical signal through a resistor, and the non-inverting input terminal is grounded through a resistor to match the characteristic impedance of the transmission line.

[0064] In one embodiment, both operational amplifiers require a power supply of ±5V.

[0065] The amplification gain of amplifier circuit 1120 is determined by the product of the amplification gain of the first operational amplifier and the amplification gain of the second operational amplifier, as shown in Formula 1:

[0066] Formula 1

[0067] in, This is for the amplification gain of amplifier circuit 1120. This is the amplification gain of the first operational amplifier. This is the amplification gain of the second operational amplifier.

[0068] For example, the first-stage operational amplifier has a gain of 22,000 times, the second operational amplifier has a gain of 20 times, and the amplifier circuit 1120 has a gain of 440,000 times. The final output signal is transmitted through the SMA terminal for subsequent analysis or processing.

[0069] The output terminal of photodiode 1110 is connected to the inverting input terminal of the first operational amplifier. One feasible method is to directly connect the output terminal of photodiode 1110 to the inverting input terminal of the first operational amplifier. Another feasible method is to connect the output terminal of photodiode 1110 across the impedance of the inverting input terminal of the first operational amplifier. No limitation is made here.

[0070] The output of the first operational amplifier is connected to the inverting input of the second operational amplifier. One feasible method is to directly connect the output of the first operational amplifier to the inverting input of the second operational amplifier. Another feasible method is to connect the output of the first operational amplifier to the inverting input of the second operational amplifier across the impedance. No limitation is made here.

[0071] In this embodiment, the amplifier circuit 1120 with a two-stage amplification structure significantly improves high-precision signal amplification and anti-interference performance. The two stages working together significantly increase the overall gain, while the distributed gain allocation reduces the noise contribution of a single stage. The discrete circuit layout effectively isolates high-frequency interference and thermal noise from the temperature control circuit 1210, and the filter capacitor eliminates high-frequency oscillations, meeting the microvolt-level signal detection requirements of the plasma diagnostic system 20 for plasma electron temperature Te and electron density ne, thus ensuring the stability and reliability of the measurement.

[0072] In one embodiment of this application, the inverting input terminal of the first operational amplifier is connected to the photodiode 1110 through a T-type feedback loop. The T-type feedback loop includes a first resistor, a second resistor, and a third resistor. The amplification gain of the first operational amplifier is determined based on the resistance values ​​of the first resistor, the second resistor, and the third resistor.

[0073] To balance bandwidth and gain, the first operational amplifier employs a T-type feedback loop consisting of a first resistor, a second resistor, and a third resistor. This configuration not only provides a high amplification factor but also effectively controls the phase margin, ensuring the stability of the amplifier circuit 1120.

[0074] A T-type feedback loop consists of a three-resistor connection structure used to adjust the gain and frequency response characteristics of an operational amplifier. The first, second, and third resistors are located at three points on the node. The first resistor is directly connected to the output of the first operational amplifier and plays the primary feedback role. The second resistor is grounded or connected to a specific voltage point to help form the T-network. The third resistor is directly connected to the inverting input of the first operational amplifier and is the main path for the feedback of the first-stage amplified electrical signal into the amplifier.

[0075] The amplification gain of the first operational amplifier is determined based on the resistance values ​​of the first, second, and third resistors, as shown in Formula 2:

[0076] Formula 2

[0077] in, This is the resistance value of the first resistor. 2 represents the resistance value of the second resistor. 3 represents the resistance value of the third resistor.

[0078] In this embodiment, a T-type feedback loop is used to effectively amplify weak photoelectric signals on the first operational amplifier while maintaining stability and good frequency response characteristics. This design ensures that problems such as self-oscillation are effectively avoided even under high-gain conditions, thereby improving the reliability and performance of the entire amplifier circuit 1120. Furthermore, by selecting appropriate resistor values, the amplifier gain can be flexibly adjusted to adapt to different application requirements, further enhancing applicability and flexibility.

[0079] In one embodiment of this application, the T-type feedback loop further includes a load capacitor, which is connected in parallel with a third resistor, wherein the load bandwidth of the amplifier circuit 1120 is determined based on the capacitance value of the load capacitor.

[0080] Load capacitors are non-polarized capacitors used for high-frequency compensation. Load capacitors are used for: 1. Phase margin optimization: suppressing high-frequency self-oscillation of operational amplifiers by introducing pole-zero compensation; 2. Noise filtering: attenuating the high-frequency components (>10 MHz) of resistor thermal noise in the T-type feedback loop; 3. Bandwidth extension: together with the equivalent feedback impedance, they determine the cutoff frequency.

[0081] The capacitance value of the load capacitor is determined based on the target bandwidth and stability requirements; for example, the value range is 0.1-10pF.

[0082] The load bandwidth of amplifier circuit 1120 is determined based on the capacitance value of the load capacitor, as shown in Formula 3:

[0083] Formula 3

[0084] in, For the load bandwidth of amplifier circuit 1120, This is the equivalent impedance of the T-type feedback loop. This is the capacitance value of the load capacitor.

[0085] It should be noted that by introducing the synergistic design of load capacitor and T-type feedback loop, this embodiment can extend the effective bandwidth of amplifier circuit 1120 to over 100 MHz while maintaining high gain.

[0086] In this embodiment, by reasonably selecting the value of the load capacitor, the frequency response characteristics of the first operational amplifier can be optimized, so that the amplifier circuit 1120 can still maintain good gain and flatness in the high-frequency range, thereby enhancing the high-frequency response performance. At the same time, the addition of the load capacitor helps to adjust the phase margin of the first operational amplifier, avoiding self-oscillation caused by excessive high-frequency gain, and ensuring the stability and reliability of the amplifier circuit 1120. In addition, the load capacitor has an attenuation effect on the high-frequency component of resistor thermal noise, reducing the noise impact.

[0087] In one embodiment of this application, the inverting input terminal of the second operational amplifier is connected to the output terminal of the first operational amplifier through a resistor feedback loop. The resistor feedback loop includes a fourth resistor, and the amplification gain of the second operational amplifier is determined based on the resistance value of the fourth resistor.

[0088] The fourth resistor is connected between the output terminal and the inverting input terminal of the second operational amplifier. The fourth resistor is used for: 1. Gain setting: determining the amplification gain of the second operational amplifier; 2. Phase compensation: suppressing high-frequency ringing by controlling the amplitude-frequency characteristics of the feedback impedance; 3. DC bias isolation: blocking the DC component coupling between the first-stage operational amplifier and the second-stage operational amplifier.

[0089] The value of the fourth resistor is selected based on the target gain and bandwidth requirements; for example, the value range is 1-10 kΩ.

[0090] The amplification gain of the second operational amplifier is determined based on the resistance value of the fourth resistor, as shown in Formula 4:

[0091] Formula 4

[0092] in, 4 represents the resistance value of the first resistor. 6 represents the resistance value of the input resistor at the input terminal of the second operational amplifier.

[0093] In this embodiment, by precisely configuring the value of the fourth resistor, the gain and frequency response of the second operational amplifier are optimized. This not only ensures that the overall amplifier circuit 1120 has a high gain, but also effectively suppresses high-frequency ringing, improving the accuracy and stability of the amplifier circuit 1120. Furthermore, the fourth resistor also blocks the coupling of the DC component, avoiding mutual interference between the preceding and following stages, ensuring the accuracy and reliability of signal transmission, and making the amplifier circuit 1120 perform better when processing weak photoelectric signals.

[0094] In one embodiment of this application, the non-inverting input of the first operational amplifier is connected to an adjustable voltage divider, wherein the adjustable voltage divider includes an adjustable resistor.

[0095] The adjustable voltage divider provides a stable DC bias voltage to the non-inverting input of the first operational amplifier, ensuring that the signal output from photodiode 1110 can be amplified at the target operating point. The adjustable voltage divider typically consists of multiple resistors, one of which is adjustable. By adjusting its resistance value, the voltage level output to the operational amplifier can be fine-tuned, thereby optimizing the overall performance of the amplifier circuit 1120.

[0096] Adjustable resistors are key components in adjustable voltage dividers. Their resistance value can be changed manually or electronically to precisely set the desired bias voltage. Adjustable resistors typically offer high accuracy and stability, providing a wide range of resistance adjustments from a few ohms to several megaohms. For example, using a precision multi-turn potentiometer with a resistance adjustment range of 0-10kΩ and a linearity error of less than ±0.5% allows for fine adjustment of the bias voltage.

[0097] In one embodiment, the adjustable voltage divider includes an adjustable resistor and two resistors connected in series to precisely adjust the DC bias voltage of the entire amplifier circuit 1120, thereby optimizing the operating point of the input signal.

[0098] In this embodiment, by connecting the non-inverting input of the first operational amplifier to an adjustable voltage divider and using an adjustable resistor to precisely set the bias voltage, an optimized configuration of the operating point of the amplifier circuit 1120 is achieved. This not only improves the overall gain and flatness of the amplifier circuit 1120 but also effectively reduces offset problems caused by temperature changes or component aging. Furthermore, the adjustable voltage divider can flexibly adjust the bias voltage according to different application scenarios, enhancing the adaptability and reliability of the amplifier circuit 1120.

[0099] Referring to the amplifier circuit 1120 of the above embodiments, Figure 2 This application provides a circuit diagram of the amplification circuit in the detector of a polychromator according to an embodiment of the present application. Figure 2 As shown:

[0100] In the first operational amplifier:

[0101] The non-inverting input (+) of the first operational amplifier is connected to an adjustable voltage divider. The adjustable voltage divider includes one adjustable resistor and two fixed resistors, which are connected in series to +5V and -5V voltages. The inverting input (-) of the first operational amplifier is connected to photodiode 1110 via a T-type feedback loop. The T-type feedback loop consists of three resistors: a first resistor, a second resistor, and a third resistor. One end of the first resistor is connected to the output of the first operational amplifier, and the other end is connected to the third resistor. One end of the second resistor is connected to ground, and the other end is connected to the third resistor. One end of the third resistor is connected to the inverting input of the first operational amplifier, and the other end is connected to the common point of the first and second resistors. A load capacitor is connected in parallel with the third resistor.

[0102] The output of the first operational amplifier is connected to the inverting input of the second operational amplifier via a fourth resistor.

[0103] In the second operational amplifier:

[0104] The non-inverting input (+) of the second operational amplifier is grounded. The inverting input (-) of the second operational amplifier receives the output signal from the first operational amplifier through a fourth resistor. The output of the second operational amplifier is connected to subsequent circuitry.

[0105] Both the first and second operational amplifiers require a power supply of ±5V.

[0106] In one embodiment of this application, the temperature control circuit 1210 includes a third operational amplifier and a MOSFET;

[0107] The non-inverting input of the third operational amplifier is connected to the fifth resistor, and the inverting input of the third operational amplifier is connected to the sixth resistor. The fifth, sixth, and seventh resistors and the wires connecting the thermistor 11110 form a voltage divider network. The target operating temperature of the temperature control circuit 1210 is determined based on the resistance value of the seventh resistor.

[0108] The output of the third operational amplifier is connected to the control terminal of the MOSFET.

[0109] The output terminal of the MOSFET is connected to the wire that connects to the thermoelectric cooler 11120.

[0110] The third operational amplifier is an operational amplifier that acts as a comparator in the temperature control circuit 1210. It is used to compare the voltage signal from the voltage divider network and control the on or off state of the MOS transistor according to the comparison result, thereby adjusting the working state of the thermoelectric cooler 11120 to maintain the target temperature.

[0111] The MOSFET serves as the switching element in the temperature control circuit 1210. Its control terminal (gate) is connected to the output terminal of the third operational amplifier, and its output terminal (between the drain and source) is connected to the wires connecting the thermoelectric cooler 11120. When the MOSFET is turned on, current flows through the MOSFET to the thermoelectric cooler 11120, making it work; otherwise, it stops working.

[0112] The fifth, sixth, and seventh resistors, along with the wire connecting the thermistor 11110, form a voltage divider network. One feasible approach is to directly connect these resistors in series to the positive and negative terminals of the power supply to form a simple voltage divider network. Another feasible approach is to use a precision resistor network to achieve a more accurate voltage divider. Yet another feasible approach is to combine a digital potentiometer to dynamically adjust the voltage divider ratio, which is not limited here.

[0113] The voltage divider network consists of the fifth resistor, the sixth resistor, the seventh resistor, and the wires connecting the thermistor 11110. Its topology satisfies:

[0114] Formula 5

[0115] in, This is the input voltage at the non-inverting input terminal of the third operational amplifier. =5 V is the reference voltage , , These are the resistance values ​​of the fifth, sixth, and seventh resistors, respectively.

[0116] The target operating temperature of the temperature control circuit 1210 is determined based on the resistance value of the seventh resistor, as shown in Formula 6:

[0117] Formula 6

[0118] Formula 6 represents This is the relationship between the resistance of the thermistor 11110 and temperature T, where A represents a constant and B represents... The weight parameter of the item, C represents The weight parameters of the item.

[0119] For example, the resistance of the seventh resistor is set to 7.32kΩ, the corresponding target operating temperature is 18℃, and the corresponding voltage is 2.5V.

[0120] The third operational amplifier acts as a comparator. When the thermistor 11110 detects that the operating temperature of the photodiode 1110 is higher than the set value, it turns on the MOSFET, and the thermoelectric cooler 11120 starts to work to cool down. When the thermistor 11110 detects that the operating temperature of the photodiode 1110 is higher than the set value, it turns off the MOSFET, and the thermoelectric cooler 11120 stops working to stop cooling down.

[0121] In this embodiment, by employing a comparator switching MOS transistor structure, precise control of the operating temperature of the photodiode 1110 is achieved, ensuring the accuracy and stability of photoelectric signal detection and improving the accuracy and stability of the detector 100.

[0122] In one embodiment of this application, the output terminal of the MOS transistor is connected to the wire connecting the thermoelectric cooler 11120 via a heating resistor.

[0123] As an auxiliary heating element in the temperature control circuit 1210, the heating resistor provides additional heat when needed to ensure the system maintains a stable operating temperature under different environments. The selection of the heating resistor depends on its power handling capacity and heat dissipation performance. Heating resistors can effectively convert electrical energy into heat energy and have high stability, making them suitable for long-term operation. For example, cement resistors and ceramic resistors, among other types of heating resistors, not only possess excellent electrical characteristics but also outstanding mechanical strength and durability, ensuring long-term stable operation even in harsh environments.

[0124] For example, when the ambient temperature is too low, the heating resistor can compensate for the effects of the low temperature by generating additional heat, thereby maintaining the photodiode 1110 in an ideal temperature range.

[0125] In this embodiment, the output terminal of the MOS transistor is connected to the wire connecting the thermoelectric cooler 11120 through a heating resistor, which enables the temperature control circuit 1210 to more accurately adjust the operating temperature of the photodiode 1110, avoiding measurement errors caused by temperature fluctuations and improving the overall performance and reliability of the detector 100.

[0126] Referring to the temperature control circuit 1210 of the above embodiments, Figure 3 This application provides a circuit diagram of a temperature control circuit in the detector of a multicolor instrument according to an embodiment of the present application. Figure 3 As shown:

[0127] The +5V power supply is connected to the positive input terminal of the third operational amplifier.

[0128] The negative input terminal of the third operational amplifier is grounded.

[0129] One end of the fifth resistor is connected to the +5V power supply. The other end of the fifth resistor is connected to one end of the sixth resistor. The other end of the sixth resistor is connected to one end of the seventh resistor. The other end of the seventh resistor is connected to the positive terminal of the thermistor 11110. The negative terminal of the thermistor 11110 is connected to ground.

[0130] In the third operational amplifier:

[0131] The non-inverting input (+) of the third operational amplifier is connected to the common point of the fifth and sixth resistors. The inverting input (-) of the third operational amplifier is connected to the common point of the seventh resistor and the thermistor 11110. The output of the third operational amplifier is connected to the gate of the MOSFET.

[0132] In a MOSFET:

[0133] The source of the MOSFET is grounded. The drain of the MOSFET is connected to one end of a heating resistor. The other end of the heating resistor is connected to the positive terminal of the thermoelectric cooler 11120.

[0134] The negative terminal of thermoelectric cooler 11120 is connected to a +5V power supply.

[0135] Based on the above Figures 1-3 In an embodiment, the operation of the detector 100 for the polychromator 10 is as follows:

[0136] Step 1: Install the test circuit onto channel 10 of the multicolor meter, and supply power to the first circuit board 110 and the second circuit board 120 respectively through the power supply board. At the same time, provide a 200V high voltage for the reverse bias voltage of the photodiode 1110 (such as an avalanche photodiode 1110).

[0137] Step 2: After sensing the light signal, photodiode 1110 performs photoelectric conversion, which is then amplified by amplifier circuit 1120. The first operational amplifier, acting as the first-stage amplifier circuit 1120, has an amplification gain of A = R3 + (1 + R1 / R2) * IN, where IN is the input electrical signal. The gain is adjusted by changing the values ​​of the first resistor (R1), the second resistor (R2), and the third resistor (R3). The electrical signal is then further amplified by the second operational amplifier, increasing the overall gain. Finally, the amplified electrical signal is output via the SMA terminal for subsequent analysis or processing.

[0138] Step 3: To ensure a constant internal temperature for the photodiode 1110, when the photodiode 1110 is operating, the electrical signal corresponding to its internal temperature is transmitted from the first circuit board 110 to the temperature control circuit 1210 via the thermistor 11110. The third operational amplifier in the temperature control circuit 1210 acts as a comparator, comparing the electrical signal from the voltage divider network and controlling the on / off state of the MOSFET based on the comparison result, thereby driving the thermoelectric cooler 11120 to perform cooling or heating operations. The operating status of the thermoelectric cooler 11120 is fed back to the temperature control circuit 1210 via connecting wires, achieving closed-loop control. The temperature change curve inside the photodiode 1110 can be observed in real time by monitoring the pins of the thermistor 11110, ensuring stable operation within the target operating temperature range.

[0139] Steps 1-3 not only improve the accuracy and stability of photoelectric signal detection, but also significantly enhance the overall performance and reliability of detector 100.

[0140] Corresponding to the detector 100 described above, this manual also provides a polychromator 10. Figure 4 A schematic diagram of a polychromator provided in an embodiment of this application is shown. The polychromator 10 includes a lens tube assembly 101, which includes the detector 100 described above.

[0141] In this embodiment, by separating the amplification circuit 1120 and the temperature control circuit 1210 onto two independent circuit boards, the coupling noise and thermal noise impact of the temperature control circuit 1210 on the amplification circuit 1120 are significantly reduced, thereby improving the quality of the amplified electrical signal. Simultaneously, the thermistor 11110 and the thermoelectric cooler 11120 are electrically connected to the temperature control circuit 1210 via wires, ensuring the stability of signal transmission. This allows the temperature control circuit 1210 to stably control the operating temperature of the photodiode 1110, guaranteeing the accuracy and stability of electrical signal detection, and thus improving the precision of the detector 100. The multicolor meter 10, employing this high-precision, high-stability detector 100, can efficiently acquire and accurately analyze light signals of different wavelengths. This not only improves the system's response speed and sensitivity but also reduces the interference of environmental factors on the measurement results, ensuring data consistency and reliability during long-term operation. This design makes the multicolor meter 10 compact, easy to integrate, and suitable for various application fields.

[0142] In one embodiment of this application, the polychromator 10 further includes an optical path box 102;

[0143] The lens barrel assembly 101 is mounted on the inner wall of the optical path box 102 via a lens flange. The axis of the lens barrel assembly 101 and the inner wall of the optical path box 102 are at an angle, which is adjusted by turning the bolts that pass through the lens flange.

[0144] The lens assembly 101 is a component in the polychromator 10 for beam transmission and dispersion. The lens assembly 101 receives the beam from the plasma and decomposes it into monochromatic light of different wavelengths using internal optical elements. It transmits (selectively transmits) monochromatic light of specific wavelengths and converts this monochromatic light into an electrical signal for precise measurement. In one embodiment, there are multiple lens assemblies 101, each corresponding to the transmission of multiple specific wavelengths of monochromatic light. Each lens assembly 101 corresponds to one optical channel. For example, if six optical channels need to be acquired, the polychromator 10 includes six lens assemblies 101. The transmission wavelength range of the first optical channel is 950nm ± 37nm, the transmission wavelength range of the second optical channel is 1000nm ± 23nm, the transmission wavelength range of the third optical channel is 1030nm ± 12nm, the transmission wavelength range of the fourth optical channel is 1048nm ± 8nm, the transmission wavelength range of the fifth optical channel is 1058nm ± 3nm, and the transmission wavelength range of the sixth optical channel is 1078nm ± 12nm.

[0145] The optical path box 102 is a closed space structure in the polychromator 10. The optical path box 102 houses the optical path and installs and fixes the various components of the polychromator 10. The optical path box 102 is usually a sealed box made of metal, plastic or composite material.

[0146] The inner wall of the optical path box 102 forms the boundary surface of its internal space, and mounting positions for the lens barrel assembly 101 and other components are pre-set on the inner wall. At least one bolt hole is provided at the mounting position of the lens barrel assembly 101, allowing the lens flange to be bolted to the inner wall of the optical path box 102. The inner wall is typically made of a matte-coated metal plate to absorb stray light.

[0147] The included angle is the angle between the axis of the lens barrel assembly 101 and the plane containing the inner wall of the optical path box 102. The size of this included angle can be adjusted by turning the bolts passing through the lens flange, so that the light beam enters the lens barrel assembly 101 at the expected incident angle and is reflected back into the optical path box 102 at the corresponding reflection angle, and is transmitted by other lens barrel assemblies 101, thereby completing the collection of monochromatic light of different wavelengths one by one.

[0148] The lens flange is a ring-shaped mechanical interface used to mount the lens barrel assembly 101 to the inner wall of the optical path box 102. The lens flange has at least one bolt through-hole, allowing bolts to pass through. The lens of the lens barrel assembly 101 is located between the lens flange and the inner wall. The inner ring diameter of the lens flange is smaller than the diameter of the lens of the lens barrel assembly 101 to ensure the lens is fixed in a predetermined position and does not move.

[0149] A bolt is a mechanical fastener that passes through the lens flange to mount the lens barrel assembly 101 onto the inner wall of the optical path box 102, and adjusts the included angle by rotation. The bolt may include a through bolt for mounting and a rotating bolt for mounting and adjusting the included angle, or it may only include a rotating bolt for mounting and adjusting the included angle; there is no limitation on this.

[0150] In the embodiments described in this specification, the microscope tube assembly 101 is mounted on the inner wall of the optical path box 102 via a lens flange. The angle between the axis of the microscope tube assembly 101 and the inner wall of the optical path box 102 is adjusted using bolts, enabling flexible adjustment and precise calibration of the optical path. This simplifies the optical path calibration process, improves reliability, and makes the structure of the multicolor instrument 10 more compact and modular. Through modular design, each component is independent, facilitating assembly, maintenance, and upgrades, significantly improving maintainability and expandability. It can adapt to adjustment needs under different experimental conditions, further enhancing the flexibility of the multicolor instrument 10.

[0151] Figure 5 A structural diagram of a multicolor instrument according to an embodiment of this application is shown, as follows: Figure 5 As shown:

[0152] The polychromator 10 is mainly composed of 6 first lens tube assemblies 1011, 1 second lens tube assembly 1012, 1 optical fiber assembly 104 and 1 optical path box 102. The first lens tube assembly 1011 and the second lens tube assembly 1012 belong to the lens tube assembly 101.

[0153] Multiple components are mounted on the optical path box 102. The inner wall of the optical path box 102 has mounting positions for fixing other components, and these mounting positions are equipped with bolt holes. Six first lens barrel assemblies 1011 are mounted on the inner wall of the optical path box 102 via lens flanges. One second lens barrel assembly 1012 is also mounted on the inner wall of the optical path box 102 via a lens flange. Fiber optic assembly 104: connected to the fiber optic adapter of the second lens barrel assembly 1012, containing fiber optic cable 103, transmits the light beam from the nuclear fusion reactor 30. The light beam enters the optical path box 102, forming a reflected light path, and is collected sequentially by the six first lens barrel assemblies 1011.

[0154] The above is an illustrative scheme of a polychromator 10 according to an embodiment of this application. It should be noted that the technical solution of the polychromator 10 and the technical solution of the detector 100 described above belong to the same concept. For details not described in detail in the technical solution of the polychromator 10, please refer to the description of the technical solution of the detector 100 described above.

[0155] Corresponding to the polychromator 10 described above, this manual also provides a plasma diagnostic system 20. Figure 6A schematic diagram of the structure of a plasma diagnostic system 20 provided in an embodiment of this application is shown. The plasma diagnostic system 20 includes the polychromator 10 described above.

[0156] In this embodiment, by separating the amplification circuit 1120 and the temperature control circuit 1210 onto two independent circuit boards, the coupling noise and thermal noise impact of the temperature control circuit 1210 on the amplification circuit 1120 are significantly reduced, thereby improving the quality of the amplified electrical signal. Simultaneously, the thermistor 11110 and the thermoelectric cooler 11120 are electrically connected to the temperature control circuit 1210 via wires, ensuring the stability of signal transmission. This allows the temperature control circuit 1210 to stably control the operating temperature of the photodiode 1110, guaranteeing the accuracy and stability of electrical signal detection, and thus improving the precision of the detector 100. Applying this high-precision, high-stability detector 10 to the multicolor instrument 10 in the plasma diagnostic system 20 enables precise measurement of plasma electron temperature and density. This system not only improves data accuracy but also enhances adaptability to complex environmental changes, providing strong support for research in the field of nuclear fusion.

[0157] The above is a schematic scheme of a plasma diagnostic system 20 according to an embodiment of this application. It should be noted that the technical solution of the plasma diagnostic system 20 belongs to the same concept as the technical solution of the polychromator 10 described above. For details not described in detail in the technical solution of the plasma diagnostic system 20, please refer to the description of the technical solution of the polychromator 10 described above.

[0158] Corresponding to the plasma diagnostic system 20 described above, this specification also provides a fusion reaction system 40. Figure 7 A schematic diagram of a fusion reaction system 40 provided in an embodiment of this application is shown. The fusion reaction system 40 includes a nuclear fusion reaction device 30 and the plasma diagnostic system 20 described above.

[0159] In this embodiment, by separating the amplification circuit 1120 and the temperature control circuit 1210 onto two independent circuit boards, the coupling noise and thermal noise impact of the temperature control circuit 1210 on the amplification circuit 1120 are significantly reduced, thereby improving the quality of the amplified electrical signal. Simultaneously, the thermistor 11110 and the thermoelectric cooler 11120 are electrically connected to the temperature control circuit 1210 via wires, ensuring the stability of signal transmission. This allows the temperature control circuit 1210 to stably control the operating temperature of the photodiode 1110, guaranteeing the accuracy and stability of electrical signal detection, and thus improving the precision of the detector 100. In the fusion reaction system 40, this high-precision, high-stability plasma diagnostic system 20 can monitor the plasma electron temperature and electron density in the nuclear fusion reactor 30 in real time, providing key parameters to optimize reaction conditions and enhance reaction efficiency and safety. This system possesses excellent anti-interference capabilities and long-term stability, is suitable for complex experimental environments, and provides reliable experimental data support for researchers, promoting the development of controlled nuclear fusion technology. In addition, the modular design facilitates maintenance and upgrades, further enhancing the system's flexibility and adaptability to meet diverse fusion research needs.

[0160] The above is a schematic scheme of a fusion reaction system 40 according to an embodiment of this application. It should be noted that the technical solution of the fusion reaction system 40 and the technical solution of the plasma diagnostic system 20 described above belong to the same concept. For details not described in detail in the technical solution of the fusion reaction system 40, please refer to the description of the technical solution of the plasma diagnostic system 20 described above.

[0161] The foregoing has described specific embodiments of this application. Other embodiments are within the scope of the appended claims. In some cases, the actions or steps recited in the claims may be performed in a different order than that shown in the embodiments and may still achieve the desired results. Furthermore, the processes depicted in the drawings do not necessarily require the specific or sequential order shown to achieve the desired results. In some embodiments, multitasking and parallel processing are also possible or may be advantageous.

[0162] Those skilled in the art should also understand that the embodiments described in the specification are all preferred embodiments, and the actions and modules involved are not necessarily essential to this application. In the above embodiments, the descriptions of each embodiment have different focuses, and for parts not described in detail in a certain embodiment, please refer to the relevant descriptions of other embodiments.

[0163] The preferred embodiments disclosed above are merely illustrative of this application. The above embodiments do not exhaustively describe all details, nor do they limit this application to the specific implementations described. Clearly, many modifications and variations can be made based on the content of this application. These embodiments are selected and specifically described in this application to better explain the principles and practical applications of this application, thereby enabling those skilled in the art to better understand and utilize this application.

Claims

1. A detector for a polychromator, characterized by The detector comprises a first circuit board on which a photodiode and an amplification circuit are fixed, and a second circuit board on which a temperature control circuit is fixed, the photodiode is integrated with a thermistor and a thermoelectric cooler; An output end of the photodiode is connected with an input end of the amplification circuit; The thermistor and the thermoelectric cooler are electrically connected with the temperature control circuit through wires.

2. The probe of claim 1, wherein, The first circuit board is connected with a first power supply for power supply, and the second circuit board is connected with a second power supply for power supply.

3. The probe of claim 1, wherein, The amplification circuit comprises a first operational amplifier and a second operational amplifier; An output end of the photodiode is connected with an inverting input end of the first operational amplifier, and an output end of the first operational amplifier is connected with an inverting input end of the second operational amplifier, wherein an amplification gain of the amplification circuit is determined according to an amplification gain of the first operational amplifier and an amplification gain of the second operational amplifier.

4. The probe of claim 3, wherein, The inverting input end of the first operational amplifier is connected with the photodiode through a T-type feedback loop, wherein the T-type feedback loop comprises a first resistor, a second resistor and a third resistor, and the amplification gain of the first operational amplifier is determined according to resistance values of the first resistor, the second resistor and the third resistor.

5. The probe of claim 4, wherein, The T-type feedback loop further comprises a load capacitor, and the load capacitor is connected with the third resistor in parallel, wherein a load bandwidth of the amplification circuit is determined according to a capacitance value of the load capacitor.

6. The probe of claim 3, wherein, The inverting input end of the second operational amplifier is connected with the output end of the first operational amplifier through a resistor feedback loop, wherein the resistor feedback loop comprises a fourth resistor, and the amplification gain of the second operational amplifier is determined according to a resistance value of the fourth resistor.

7. The probe of claim 3, wherein, A non-inverting input end of the first operational amplifier is connected with an adjustable voltage divider, wherein the adjustable voltage divider comprises an adjustable resistor.

8. The probe of any one of claims 1-7, wherein, The temperature control circuit comprises a third operational amplifier and a MOS tube; A non-inverting input end of the third operational amplifier is connected with a fifth resistor, and an inverting input end of the third operational amplifier is connected with a sixth resistor, wherein the fifth resistor, the sixth resistor, a seventh resistor and a wire connected with the thermistor constitute a voltage division network, and a target working temperature of the temperature control circuit is determined according to a resistance value of the seventh resistor; An output end of the third operational amplifier is connected with a control end of the MOS tube; An output end of the MOS tube is connected with the wire connected with the thermoelectric cooler.

9. The probe of claim 8, wherein, The output end of the MOS tube is connected with the wire connected with the thermoelectric cooler through a heating resistor.

10. A polychromator characterized by The polychromator comprises a lens barrel assembly, and the lens barrel assembly comprises the detector according to any one of claims 1-9.

11. The multichromometer according to claim 10, characterized in that, The polychromator further comprises a light path box; The lens barrel assembly is mounted on an inner wall of the light path box through a lens flange, wherein an axis of the lens barrel assembly and the inner wall of the light path box form an included angle, and the included angle is adjusted by screwing a bolt passing through the lens flange.

12. A plasma diagnostic system characterized by, The polychromator comprises the polychromator according to claim 10 or 11.

13. A fusion reaction system, characterized by, The plasma diagnostic system comprises a nuclear fusion reaction device and the polychromator according to claim 12.

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