Vertical cavity surface emitting laser

By designing independent sub-resonant cavity structures and tunnel junctions in a vertical cavity surface-emitting laser, precise control of photon-photon resonance was achieved, solving the problems of low optical wave resonance efficiency and poor stability, expanding the transmission bandwidth, reducing the fabrication difficulty, and realizing a higher data transmission rate.

CN224596019UActive Publication Date: 2026-08-04吉光半导体科技有限公司
0 Cites 0 Cited by

Patent Information

Application Number
CN202521968905.8
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2025-09-12
Publication Date
2026-08-04
Estimated Expiration
2035-09-12

AI Technical Summary

Technical Problem

Existing vertical cavity surface-emitting lasers (VCSELs) have difficulty exceeding 35 GHz in terms of -3 dB bandwidth. The light waves have low resonance efficiency and poor stability in the secondary resonant cavity, resulting in poor improvement in transmission bandwidth.

Method used

Design a vertical cavity surface-emitting laser (VCSEL) with an independent sub-resonant cavity structure. The sub-resonant frequency is precisely controlled by a second positive electrode to achieve photon-photon resonance. A tunnel junction is used to separate the carrier transport between the main resonant cavity and the sub-resonant cavity, reducing transverse transmission loss and improving coupling efficiency and stability.

Benefits of technology

It effectively expands the transmission bandwidth, improves photon-photon resonance efficiency and stability, reduces the fabrication difficulty, and achieves a higher data transmission rate.

✦ Generated by Eureka AI based on patent content.
Patent Text Reader

Abstract

This invention relates to the field of semiconductor laser technology, and more particularly to a vertical-cavity surface-emitting laser (VCSEL). The VCSEL comprises: a negative electrode layer, a substrate, a bottom DBR layer, a first N-type confinement layer, an active region layer, a P-type confinement layer, and a second N-type confinement layer, stacked sequentially. The second N-type confinement layer includes a heavily doped portion, a lightly doped portion, and an insulating portion. The heavily doped portion includes a main tunnel junction and a secondary tunnel junction spaced apart on the surface of the P-type confinement layer. A top DBR layer is located in the central region and includes a first portion and a second portion. A first positive electrode is located in a first edge region. A second positive electrode is located in a second edge region, and a portion is located on the top surface of the second portion. This invention facilitates a stronger PPR effect, thereby effectively improving the -3dB bandwidth of the VCSEL.
Need to check novelty before this filing date? Find Prior Art