Semiconductor process chamber and semiconductor process apparatus

Abstract

The application discloses a semiconductor process chamber and a semiconductor process device. The disclosed semiconductor process chamber comprises a chamber body and a first transmission pipeline, wherein the chamber body has an inner cavity and an opening which are in communication with each other, and the first transmission pipeline is arranged in the inner cavity and used for conveying a process fluid in a fluid source into the inner cavity. The first transmission pipeline comprises a transmission section and an output section which are connected with each other. At least a part of the transmission section extends from the opening towards a direction away from the opening. The output section is provided with an output hole used for outputting the process fluid into the inner cavity. The above scheme can solve the problem that the process fluid entering the inner cavity is difficult to be sufficiently heated, thereby affecting the process effect.

Description

Technical Field

[0001] This application belongs to the field of semiconductor process equipment design technology, specifically relating to a semiconductor process chamber and semiconductor process equipment. Background Technology

[0002] Semiconductor process equipment such as LPCVD (Low Pressure Chemical Vapor Deposition) typically performs processes (e.g., deposition of amorphous silicon thin films) on semiconductor wafers (e.g., silicon wafers) in a semiconductor process chamber. During the process, a process fluid (e.g., silane) at room temperature is usually introduced into the inner cavity of the semiconductor process chamber. The high-temperature environment inside the chamber heats the process fluid to a preset temperature, causing it to react (e.g., decompose), thus enabling the reacted process fluid to be processed.

[0003] The related technology involves a semiconductor process chamber where an annular transport pipe is placed on the inner wall of the chamber's opening, and multiple output holes are provided on the annular transport pipe, i.e., the output holes are located at the opening. This allows the process fluid to diffuse from the opening into the inner chamber through the multiple output holes. However, the lower temperature environment at the opening can easily affect the temperature of the process fluid diffusing from the opening, causing the process fluid to enter the inner chamber at a lower temperature. This affects the heating efficiency of the process fluid in the high-temperature environment of the inner chamber, making it difficult for the process fluid to be fully heated after entering the inner chamber. Consequently, the process fluid cannot react sufficiently, which can easily affect the process effect. Utility Model Content

[0004] This utility model discloses a semiconductor process chamber and semiconductor process equipment to solve the problem in related technologies where the process fluid entering the semiconductor process chamber is difficult to be fully heated, which easily affects the process effect.

[0005] To solve the above-mentioned technical problems, this utility model provides the following technical solution: In a first aspect, this application discloses a semiconductor process chamber, wherein the disclosed semiconductor process chamber includes a chamber body and a first transmission channel; The chamber body has an interconnected inner cavity and an opening. The first transmission pipe is disposed in the inner cavity and is used to transport process fluid from a fluid source to the inner cavity. The first transmission pipe includes a connected transmission section and an output section. At least a portion of the transmission section extends from the opening in a direction away from the opening. The output section is provided with an output port for outputting the process fluid into the inner cavity.

[0006] Secondly, this application discloses a semiconductor process apparatus, which includes a cavity gate and the semiconductor process chamber described above. The chamber body has an opening communicating with the inner cavity, and the cavity gate is used to open or close the opening.

[0007] The technical solution adopted in this utility model can achieve the following technical effects: The semiconductor process chamber disclosed in this application improves upon the structure of semiconductor process chambers in related technologies by configuring a first transmission channel as a structure including a connected transmission section and an output section. Furthermore, by configuring at least a portion of the transmission section to extend from the opening of the chamber body of the semiconductor process chamber in a direction away from the opening, the output section connected to the transmission section can be located relatively far from the opening, thereby allowing the output port on the output section to be located relatively far from the opening. In this structure, since the first transmission channel is located within the inner cavity, the high-temperature environment within the inner cavity can heat the process fluid entering the first transmission channel. The process fluid in the first transmission channel continues to be heated after flowing into the inner cavity through the output port. Simultaneously, because the output port is relatively far from the opening, the influence of the lower temperature environment at the opening on the process fluid output from the output port can be mitigated, minimizing the impact on the temperature of the process fluid output from the output port. This ensures that the process fluid entering the inner cavity from the output port is efficiently heated, facilitating a full reaction and minimizing any impact on the process performance. Attached Figure Description

[0008] Figure 1 This is a schematic diagram of the structure of the semiconductor process equipment disclosed in the embodiments of this application; Figure 2 This is a partial structural schematic diagram of the semiconductor process chamber disclosed in the embodiments of this application; Figure 3 This is a schematic diagram of another part of the semiconductor process chamber structure disclosed in the embodiments of this application; Figure 4 This is a schematic diagram of another part of the structure of the semiconductor process chamber disclosed in the embodiments of this application from another perspective; Figure 5 This is a schematic diagram of the structure of a first transmission channel disclosed in an embodiment of this application; Figure 6 This is a schematic diagram of another first transmission channel structure disclosed in an embodiment of this application; Figure 7 This is a schematic diagram of another first transmission channel disclosed in the embodiments of this application; Figure 8 This is a schematic diagram of another part of the semiconductor process chamber disclosed in the application embodiment; Figure 9 This is a schematic diagram of the structure of the limiting member disclosed in the embodiments of this application; Figure 10 This is a schematic diagram of the structure of the semiconductor sheet disclosed in the embodiments of this application.

[0009] Explanation of reference numerals in the attached figures: 100 - Chamber body, 110 - Inner cavity, 120 - Opening, 140 - Bottom wall, 150 - Process tube 200 - First transmission pipe, 210 - Transmission section, 211 - Bending section, 212 - First straight section, 213 - Second straight section, 220 - Output section, 230 - Output hole, 240 - Reversing nozzle 310 - Annular connector, 311 - First connecting hole, 320 - Flow equalization device, 321 - Flow equalization plate 410-Cavity door, 420-Bearing propeller, 510 - Boat support frame, 520 - Support boat, 530 - Semiconductor sheet, 610-First connector, 611-First interface, 612-Second interface, 620-Air inlet plug, 630-First connecting sleeve, 631-Third connecting hole, 640-Mounting base, 641-Annular protrusion, 642-First positioning hole, 643-First stepped surface, 650-Limiting component, 651-Disassembly / removal hole, 660-Sealing component, 670-Second connecting sleeve. 700 - Second transmission pipe, 710 - Second positioning hole 800 - Heating element. Detailed Implementation

[0010] To make the objectives, technical solutions, and advantages of this utility model clearer, the technical solutions of this utility model will be clearly and completely described below in conjunction with specific embodiments and corresponding drawings. Obviously, the described embodiments are only a part of the embodiments of this utility model, and not all of them. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this utility model.

[0011] The terms "first," "second," etc., used in the specification and claims of this application are used to distinguish similar objects and are not used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that embodiments of this application can be implemented in orders other than those illustrated or described herein, and the objects distinguished by "first," "second," etc., are generally of the same class and are not limited in number; for example, a first object can be one or more.

[0012] In the description of this utility model, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "joining" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances.

[0013] In the semiconductor process chamber involved in the related technology, when amorphous silicon thin film deposition is performed in the semiconductor process chamber, the process fluid is silane, the semiconductor wafer 530 is a silicon wafer, and the number of carrier boats 520 is twelve, those skilled in the art have measured the film thickness of multiple semiconductor wafers 530 in each carrier boat 520 after the process is completed, thereby obtaining the film thickness data of multiple semiconductor wafers 530 in each carrier boat 520, as shown in Table 1: Table 1

[0014] It should be noted that those skilled in the art have numbered the twelve carrier boats 520, with smaller numbers indicating that the carrier boat 520 is closer to the opening 120. Please also refer to... Figure 10 Those skilled in the art set five detection points on the semiconductor wafer 530 for detection. In the semiconductor field, it is generally required that the uniformity of amorphous silicon film thickness be stable within 5%. Obviously, in the semiconductor process chamber involved in the related technology, the uniformity of film thickness of multiple semiconductor wafers 530 in multiple carrier boats 520 exceeds 5%. It can be seen that the uniformity of film thickness needs to be improved.

[0015] Therefore, please refer to Figures 1 to 10 This application discloses a semiconductor process chamber, which includes a chamber body 100 and a first transmission channel 200.

[0016] The chamber body 100 is a basic component of the semiconductor process chamber, providing mounting positions for other components of the semiconductor process chamber. The first transmission channel 200 is located in the chamber body 100. In addition, the chamber body 100 is also used to form some functional spaces or structures, such as an inner cavity 110 and an opening 120, and the inner cavity 110 and the opening 120 are interconnected.

[0017] The first transfer channel 200 is a core component in the semiconductor process chamber that delivers process fluids (e.g., silane) to the inner cavity 110. The first transfer channel 200 is located within the inner cavity 110 and is used to deliver process fluids from a fluid source to the inner cavity 110. The first transfer channel 200 includes a connected transfer section 210 and an output section 220. At least a portion of the transfer section 210 extends from the opening 120 in a direction away from the opening 120, thereby allowing the output section 220 to be relatively far from the opening 120. The output section 220 has an output port 230 for discharging process fluids into the inner cavity 110. That is, the process fluids in the first transfer channel 200 can flow out of the first transfer channel 200 through the output port 230 and into the inner cavity 110. Since the output section 220 is relatively far from the opening 120, the output port 230 is also relatively far from the opening 120, allowing the process fluids entering the inner cavity 110 through the output port 230 to be relatively far from the opening 120.

[0018] The semiconductor process chamber disclosed in this application improves the structure of the semiconductor process chamber involved in the related technology by setting the first transmission channel 200 as a structural component including a connected transmission section 210 and an output section 220, and by setting at least a portion of the transmission section 210 to extend from the opening 120 in a direction away from the opening 120, the output section 220 connected to the transmission section 210 can be relatively far away from the opening 120, thereby allowing the output hole 230 on the output section 220 to be relatively far away from the opening 120. In this structure, since the first transmission pipe 200 is located in the inner cavity 110, the process fluid entering the first transmission pipe 200 can be heated by the high-temperature environment in the inner cavity 110. The process fluid in the first transmission pipe 200 can continue to be heated after flowing into the inner cavity 110 through the output hole 230. At the same time, since the output hole 230 is relatively far from the opening 120, the influence of the low temperature environment at the opening 120 on the process fluid output from the output hole 230 can be mitigated, and the temperature of the process fluid output from the output hole 230 can be avoided as much as possible. This allows the process fluid entering the inner cavity 110 from the output hole 230 to be heated efficiently, thereby fully heating the process fluid entering the inner cavity 110, facilitating the full reaction of the process fluid, and thus minimizing any impact on the process effect.

[0019] Furthermore, in related technologies, the entire annular transmission pipe is located at the opening 120, resulting in the low-temperature environment at the opening 120 having a significant impact on the process fluid within the annular transmission pipe. However, in this structure, since at least a portion of the transmission section 210 extends from the opening 120 in a direction away from the opening 120, only a portion of the structure of the first transmission pipe 200 is located at the opening 120, thereby helping to reduce the impact of the low-temperature environment at the opening 120 on the process fluid within the first transmission pipe 200.

[0020] Furthermore, in related technologies, after the process fluid exits from the outlet of the annular transfer pipe, it diffuses from the opening 120 into the inner cavity 110. This causes the process fluid to come into direct contact with the lower-temperature environment at the opening 120, and the process fluid exiting from the outlet of the annular transfer pipe will have a large area of ​​contact with the lower-temperature environment at the opening 120, which will further affect the process fluid exiting from the outlet of the annular transfer pipe. In this application, since the outlet 230 is relatively far away from the opening 120, the direct contact between the process fluid and the lower-temperature environment at the opening 120 can be avoided as much as possible, thus mitigating the impact of the lower-temperature environment at the opening 120 on the process fluid exiting from the outlet 230.

[0021] In this embodiment of the application, an amorphous silicon thin film deposition process can be performed in the semiconductor process chamber. The process fluid can be silane, and the semiconductor wafer 530 can be a silicon wafer. In this case, the silane can be pyrolyzed in the inner chamber 110 so that it can be deposited on the surface of the silicon wafer to form an amorphous silicon thin film.

[0022] In a semiconductor process chamber, when depositing amorphous silicon thin films using silane as the process fluid and silicon wafers as the semiconductor wafers 530, those skilled in the art measured the film thickness of multiple semiconductor wafers 530 in each carrier boat 520 after the process was completed, thus obtaining the film thickness data of multiple semiconductor wafers 530 in each carrier boat 520, as shown in Table 2: Table 2

[0023] It should be noted that those skilled in the art have numbered the twelve carrier boats 520, with smaller numbers indicating that the carrier boat 520 is closer to the opening 120. Please also refer to... Figure 10 Those skilled in the art have set five detection points on the semiconductor wafer 530 for detection. In the semiconductor field, it is generally required that the uniformity of the amorphous silicon film thickness be stable within 5%. Obviously, in the semiconductor process chamber disclosed in this application, the uniformity of the film thickness of the multiple semiconductor wafers 530 in the multiple carrier boats 520 is stable within 5%.

[0024] In one embodiment, the semiconductor process chamber may further include an annular connector 310, which may be disposed at the opening 120. The inner cavity 110 may communicate with the external environment of the chamber body 100 through the opening 120 and the annular connector 310 in sequence. The annular connector 310 may be provided with a first connection hole 311, and the transmission section 210 may be sealed to the first connection hole 311. The transmission section 210 is used to receive process fluid output from the first connection hole 311, that is, the fluid source may be sealed to the first connection hole 311 to transport the process fluid to the transmission section 210 through the first connection hole 311. Specifically, the annular connector 310 may be a flange, and the transmission section 210 may be sealed to the first connection hole 311 by means of a sealing ring or sealant.

[0025] In a further technical solution, the semiconductor process chamber may also include a flow equalization device 320. The flow equalization device 320 is disposed in the inner cavity 110 and is positioned close to the opening 120 so that the process fluid output from the output hole 230 is uniformly distributed through the flow equalization device 320, thereby enabling the process fluid to diffuse more evenly in the inner cavity 110 to ensure the process effect. Specifically, the flow equalization device 320 may be distributed opposite to the opening 120.

[0026] In an optional embodiment, the flow equalization device 320 may include a plurality of flow equalization plates 321, which may be spaced apart from each other and opposite to each other. Each output hole 230 may be located between the corresponding flow equalization plate 321 and the opening 120 in a direction parallel to the central axis of the inner cavity 110, so as to equalize the flow of the process fluid input into the inner cavity 110 from the corresponding output hole 230 through the corresponding flow equalization plate 321, thereby enabling the process fluid to diffuse more evenly in the inner cavity 110, so as to ensure the process effect.

[0027] In one feasible technical solution, there can be multiple output holes 230. Multiple output holes 230 can be provided in the output section 220, and at least some of the output holes 230 can be oriented perpendicular to the central axis of the inner cavity 110, so as to output the process fluid into the inner cavity 110 more efficiently.

[0028] In one embodiment, the orientation of at least a portion of the output holes 230 may be parallel to the bearing direction of the carrier paddle 420 described later, and the bearing direction of the carrier paddle 420 may be perpendicular to the extension direction of the central axis of the inner cavity 110. This structure allows the process fluid flowing out from at least a portion of the output holes 230 to flow as far as possible toward the corresponding flow equalizer 321, so as to equalize the flow of the process fluid as much as possible, and thus achieve more effective flow equalization.

[0029] In other embodiments, at least a portion of the output holes 230 may be tilted relative to the bearing direction of the bearing paddle 420, so that the process fluid can be more dispersed in the inner cavity 110 after flowing out through at least a portion of the output holes 230, so as to facilitate the diffusion of the process fluid in the inner cavity 110.

[0030] In a further technical solution, some of the output holes 230 can be located on the pipe wall of the output section 220, and the orientation of some of the output holes 230 can be perpendicular to the central axis of the inner cavity 110. Other output holes 230 can be located at the port of the free end of the output section 220. This allows multiple output holes 230 to have different orientations, so that the first transmission pipe 200 can output process fluid into the inner cavity 110 in multiple directions through multiple output holes 230, so that the process fluid can diffuse in the inner cavity 110.

[0031] Optionally, the first transmission pipe 200 may further include a reversing nozzle 240. The reversing nozzle 240 may be located between the corresponding flow equalizer 321 and the opening 120 in a direction parallel to the central axis of the inner cavity 110, and the nozzle orientation of the reversing nozzle 240 may be perpendicular to the central axis of the inner cavity 110. The reversing nozzle 240 may be connected to the free end and may be connected to another part of the output hole 230. This structure can avoid the situation where the orientation of the other part of the output hole 230 is parallel to the central axis of the inner cavity 110, which would cause the process fluid output from the other part of the output hole 230 to be easily sprayed into the opening 120 and affect the process fluid.

[0032] Specifically, the nozzle orientation of the reversing nozzle 240 can be parallel to the bearing direction of the carrier paddle 420, so that the process fluid flowing out of the reversing nozzle 240 can flow to the corresponding flow equalization plate 321 as much as possible, thereby effectively equalizing the process fluid flowing out of the reversing nozzle 240.

[0033] Of course, the nozzle orientation of the reversing nozzle 240 can also be tilted relative to the bearing direction of the bearing paddle 420, so that the process fluid can be more dispersed in the inner cavity 110 after flowing out through the reversing nozzle 240, so that the process fluid can diffuse in the inner cavity 110.

[0034] In one embodiment, the free end of the output section 220 can be a closed end, and each output hole 230 can be provided on the pipe wall of the output section 220, so as to avoid the process fluid output from the output hole 230 from being easily sprayed into the opening 120 and affecting the process fluid.

[0035] Furthermore, the sum of the cross-sectional areas of the multiple output holes 230 can be greater than the cross-sectional area of ​​the first transmission pipe 200. The first end of the output section 220 can be a free end, and the second end of the output section 220 can be connected to the transmission section 210. This structure can minimize the possibility that the process fluid tends to concentrate at the second end of the output section 220, making it difficult to distribute the process fluid evenly to the multiple output holes 230. Consequently, the process fluid tends to flow out from some of the output holes 230 distributed at the second end of the transmission section 210, making it difficult for the process fluid to flow evenly into the inner cavity 110.

[0036] To ensure that the process fluid flows out more uniformly from the multiple output holes 230, the cross-sectional areas of the multiple output holes 230 can all be the same. It should be noted that the cross-section of the output hole 230 is a section perpendicular to the central axis of the output hole 230, and the cross-section of the first transmission pipe 200 is a section perpendicular to the central axis of the first transmission pipe 200.

[0037] In this embodiment, the semiconductor process chamber may further include a chamber door 410 and a carrier paddle 420 fixedly connected to the chamber door 410 and movable during the opening and closing of the chamber door 410. When the chamber door 410 closes the opening 120 and the carrier paddle 420 carries the carrier boat support frame 510, the carrier paddle 420 may be at least partially located within the inner cavity 110. This structure facilitates the transport of the carrier boat support frame 510 carried by the carrier paddle 420. Simultaneously, a flow equalization device 320 may be movably mounted on the carrier paddle 420, allowing for flexible adjustment of the position of the flow equalization device 320 according to actual needs, thus adapting to different flow equalization scenarios.

[0038] Specifically, when the cavity gate 410 closes the opening 120 and the carrier paddle 420 carries the carrier boat carrier frame 510, with the carrier paddle 420 at least partially located in the inner cavity 110, the flow equalization device 320 can be located in the inner cavity 110 and between the opening 120 and the carrier boat carrier frame 510, so that the process fluid can be diffused to the carrier boat carrier frame 510 through the flow equalization device 320 as much as possible, thereby allowing the process fluid to be evenly diffused to the carrier boat carrier frame 510, so that the process fluid can be processed with the semiconductor wafer 530 in the carrier boat 520 on the carrier boat carrier frame 510.

[0039] In one embodiment, the diameter of the output orifice 230 can increase from the lumen of the first transmission pipe 200 toward the outer side of the lumen, thereby allowing the process fluid to smoothly and unobstructedly enter the inner cavity 110 through the output orifice 230, minimizing the formation of turbulence. Specifically, the output orifice 230 can be a tapered orifice.

[0040] In a feasible technical solution, the transmission section 210 may include at least one bent section 211 that bends toward the opening 120. This allows a portion of the pipe section 210 to extend away from the opening 120, and another portion of the pipe section 210 to extend toward the opening 120, thereby extending the length of the transmission section 210 and giving it a longer transmission path. This allows the process fluid to have a longer heating time when it is transported within the transmission section 210, enabling more thorough preheating of the process fluid and facilitating a more complete reaction.

[0041] In a further technical solution, the transmission segment 210 may include a bent segment 211, a first straight segment 212, and a second straight segment 213. The first end of the first straight segment 212 may be close to the opening 120 and used to receive the process fluid output from the fluid source. The second end of the first straight segment 212 may be away from the opening 120 and connected to the first end of the bent segment 211. The first end of the second straight segment 213 may be close to the opening 120 and connected to the second end of the output segment 220. The second end of the second straight segment 213 may be away from the opening 120 and connected to the second end of the bent segment 211. The first end of the output segment 220 may be a free end and may be close to the opening 120. The second end of the output segment 220 may be away from the opening 120.

[0042] In this structure, the first transmission pipe 200 has a relatively compact structure, which avoids occupying too much space in the inner cavity 110 and helps to reduce the impact on the layout in the inner cavity 110. Of course, in other embodiments, the transmission section 210 can also be a spiral pipe section, and this application embodiment does not limit this.

[0043] In order to effectively extend the length of the transmission segment 210, the ratio between the sum of the lengths of the first straight segment 212 and the second straight segment 213 and the length of the output segment 220 can be 3:2, which helps to ensure that the transmission segment 210 has a longer transmission path.

[0044] To improve the transmission efficiency of process fluids, in one embodiment, the semiconductor process chamber may further include a first connector 610. The first connector 610 may have a first interface 611 and two opposite second interfaces 612. There may be two first transmission pipes 200, which may be connected to the two second interfaces 612 in a one-to-one correspondence, so that the two first transmission pipes 200 can be distributed on opposite sides of the first connector 610, and the distribution direction of the two first transmission pipes 200 may be parallel to the distribution direction of the two second interfaces 612. At the same time, the first connector 610 is used to transport the process fluid in the fluid source to the corresponding first transmission pipe 200.

[0045] Of course, in other embodiments, the number of first transmission channels 200 can be one, three, four, etc. Correspondingly, when the semiconductor process chamber includes the first connector 610, the number of second interfaces 612 can match the number of first transmission channels 200. This application embodiment does not limit this.

[0046] Furthermore, the distribution direction of the two first transmission pipes 200 can be perpendicular to the bearing direction of the carrier paddle 420, thereby avoiding the stacking of the two first transmission pipes 200 in the bearing direction of the carrier paddle 420, so as to avoid wasting the space of the inner cavity 110 in the bearing direction of the carrier paddle 420, and thus avoid obstructing the carrier paddle 420 when it enters and exits the inner cavity 110 through the opening 120.

[0047] In the embodiments disclosed in this application, the chamber body 100 may further include a bottom wall 140, which may be opposite to the opening 120. The bottom wall 140 may be provided with a plurality of second connection holes that communicate with the inner cavity 110 respectively. The semiconductor process chamber may further include a plurality of air inlet plugs 620, a plurality of first connecting sleeves 630 and a plurality of second transmission pipes 700. The plurality of air inlet plugs 620 and the plurality of first connecting sleeves 630 may be disposed outside the inner cavity 110.

[0048] Multiple first connecting sleeves 630 can be connected to the bottom wall 140. The third connecting holes 631 of the multiple first connecting sleeves 630 can be connected to multiple second connecting holes one by one. The first ends of multiple second transmission pipes 700 can pass through multiple second connecting holes and multiple third connecting holes 631 one by one and extend into the inner cavity 110. The second ends of multiple second transmission pipes 700 can be positioned in multiple third connecting holes 631 one by one. Multiple air inlet plugs 620 can be sealed and fitted with multiple third connecting holes 631 one by one and can be inserted into the second ends of multiple second transmission pipes 700 one by one. Multiple air inlet plugs 620 are used to deliver the process fluid in the fluid source to the multiple second transmission pipes 700 one by one, so as to deliver the process fluid in the fluid source to the inner cavity 110 through the multiple second transmission pipes 700.

[0049] This structure allows process fluid to be delivered from the bottom wall 140 into the inner cavity 110, thus enabling process fluid to be delivered from both the opening 120 and the bottom wall 140 into the inner cavity 110, which in turn facilitates a more uniform distribution of the process fluid within the inner cavity 110.

[0050] It should be noted that the central axis of the corresponding second connecting hole and the central axis of the corresponding third connecting hole 631 can coincide.

[0051] Optionally, the multiple first connecting sleeves 630 can be connected to the bottom wall 140 by means of threaded connection, snap-fit, or welding to facilitate maintenance. Of course, the multiple first connecting sleeves 630 and the bottom wall 140 can also be an integral structure, which helps to simplify the installation process.

[0052] In a further technical solution, the semiconductor process chamber may also include multiple mounting bases 640 and multiple limiting members 650 disposed outside the inner cavity 110. Multiple air intake plugs 620 may be correspondingly disposed on the multiple mounting bases 640, and the multiple mounting bases 640 may correspondingly seal and block multiple third connection holes 631, so that the multiple air intake plugs 620 can be correspondingly and sealingly engaged with the multiple third connection holes 631 to prevent leakage of process fluids. Specifically, the multiple air intake plugs 620 may be sealingly connected to the multiple mounting bases 640 by welding or bonding.

[0053] The mounting base 640 may include an annular protrusion 641 disposed in a corresponding third connecting hole 631. The annular protrusion 641 may be provided with a first positioning hole 642. The pipe wall of the second transmission pipe 700 may be provided with a second positioning hole 710. The second ends of multiple second transmission pipes 700 may be respectively inserted into the corresponding annular protrusion 641. Multiple limiting members 650 may be inserted one-to-one into the corresponding first positioning hole 642 and the corresponding second positioning hole 710.

[0054] This structure enables the corresponding mounting base 640 and the corresponding second transmission pipe 700 to be limited and matched in the circumferential and axial directions of the corresponding second transmission pipe 700. This avoids the situation where the flow rate of the process fluid is too large and easily impacts multiple second transmission pipes 700, causing multiple second transmission pipes 700 to separate from the annular protrusion 641 of the corresponding mounting base 640, and thus separate from the corresponding air inlet plug 620, which could easily affect the diffusion of the process fluid.

[0055] It should be noted that the central axis of the corresponding annular protrusion 641, the central axis of the corresponding second transmission pipe 700, the central axis of the corresponding air inlet plug 620, and the central axis of the corresponding third connection hole 631 can all coincide.

[0056] Optionally, the limiting member 650 may be provided with a disassembly hole 651, which may be a threaded hole. During disassembly, the threaded member can engage with the threaded hole to detach the limiting member 650 from the corresponding second positioning hole 710 and the corresponding first positioning hole 642, thereby facilitating the disassembly of the limiting member 650 and the second transmission pipe 700 for easier maintenance. Specifically, the limiting member 650 may be a connecting pin.

[0057] For example, the semiconductor process chamber may further include multiple seals 660. A first stepped surface 643 may be provided on the outer wall of the annular protrusion 641. The first positioning hole 642 and the first stepped surface 643 may be distributed along a direction away from the bottom wall 140, i.e., the first positioning hole 642 may be located on the side of the first stepped surface 643 closer to the bottom wall 140. The inner wall of the third connecting hole 631 may be provided with a second stepped surface. The multiple seals 660 may be clamped between the corresponding first stepped surface 643 and the corresponding second stepped surface, so that the multiple mounting seats 640 can seal and block the multiple third connecting holes 631 one-to-one.

[0058] This structure allows for the relatively stable installation of multiple seals 660 by clamping them between the corresponding first step surface 643 and the corresponding second step surface, thereby enabling the corresponding mounting base 640 to stably seal and block the corresponding third connecting hole 631. Specifically, the seal 660 can be a sealing ring, and the specific type of seal 660 is not limited in this embodiment.

[0059] Of course, in other embodiments, multiple seals 660 can be respectively fitted onto the outer wall of multiple annular protrusions 641 to achieve a sealing fit between the corresponding mounting base 640 and the corresponding third connecting hole 631.

[0060] In an optional technical solution, the semiconductor process chamber may further include multiple second connecting sleeves 670. These multiple second connecting sleeves 670 can be fitted one-to-one with multiple first connecting sleeves 630 and connected one-to-one with multiple mounting bases 640. Each of the multiple second connecting sleeves 670 can press a corresponding mounting base 640 against a corresponding first connecting sleeve 630, so that a corresponding first step surface 643 can be pressed against a corresponding second step surface by a corresponding sealing element 660. This structure, by allowing multiple second connecting sleeves 670 to be fitted one-to-one with multiple first connecting sleeves 630, avoids damaging the mechanical strength of the multiple first connecting sleeves 630, thereby facilitating a stable connection between the corresponding second connecting sleeve 670 and the corresponding first connecting sleeve 630.

[0061] Specifically, the corresponding second connecting sleeve 670 and the corresponding first connecting sleeve 630 can be connected by threaded connection, snap-fit ​​or welding. The embodiments of this application do not limit the specific connection method between the corresponding second connecting sleeve 670 and the corresponding first connecting sleeve 630.

[0062] In one embodiment, the chamber body 100 may further include a process tube 150, an annular connector 130 and a bottom wall 140 which may be respectively connected to the opposite ends of the process tube 150, and the bottom wall 140, the annular connector 130 and the process tube 150 may together form an inner cavity 110. Specifically, the semiconductor process chamber may be a horizontal furnace, and the specific type of semiconductor process chamber is not limited in the embodiments of this application.

[0063] Furthermore, the semiconductor process chamber may also include a heating element 800, which may be disposed in the inner cavity 110 for heating the inner cavity 110. The heating element 800 may be fixed to the bottom wall 140. Specifically, the heating element 800 may be a thermocouple.

[0064] Based on the semiconductor process chamber disclosed in the embodiments of this application, the embodiments of this application further disclose a semiconductor process apparatus. The disclosed semiconductor process apparatus includes a chamber door 410 and a semiconductor process chamber as described in any of the above embodiments. The chamber body 100 has an opening 120 communicating with an inner cavity 110. The chamber door 410 is used to open or close the opening 120. Specifically, when the chamber door 410 closes the opening 120, the chamber door 410 seals the opening 120.

[0065] In a further technical solution, the semiconductor process equipment may also include a carrier paddle 420, a boat carrier frame 510, and multiple carrier boats 520. The carrier paddle 420 is fixedly connected to the cavity door 410 and can move with the cavity door 410 during opening and closing, so as to move the boat carrier frame 510 carried on the carrier paddle 420 into or out of the inner cavity 110, thereby enabling the carrier boats 520 carried by the boat carrier frame 510 to be moved into or out of the inner cavity 110. Specifically, the carrier paddle 420 is used to carry the boat carrier frame 510, the boat carrier frame 510 is used to carry multiple carrier boats 520, and the carrier boats 520 are used to carry semiconductor wafers 530.

[0066] When the cavity door 410 closes the opening 120 and the carrier paddle 420 carries the carrier boat 520 via the carrier boat support frame 510, at least a portion of the carrier paddle 420 can be located in the inner cavity 110, and the first transmission pipe 200 can be located between the side wall of the cavity body 100 and the carrier paddle 420.

[0067] In related technologies, the annular transfer pipe surrounds the central axis of the inner cavity 110. This causes the temperature of the inner cavity 110 near the opening 120 to be affected during the process fluid delivery to the inner cavity 110 via the annular transfer pipe, thus affecting a wide area within the inner cavity 110. However, in this application, since the first transfer pipe 200 is located between the side wall of the chamber body 100 and the carrier paddle 420, the first transfer pipe 200 only affects the temperature between the side wall of the chamber body 100 and the carrier paddle 420 during the process fluid delivery to the inner cavity 110. This helps to mitigate the impact on the temperature within the inner cavity 110, allowing the temperature within the inner cavity 110 to be kept stable simply by adjusting the temperature between the side wall of the chamber body 100 and the carrier paddle 420, thereby enabling stable process operation.

[0068] It should be noted that when the chamber body 100 includes the process tube 150, the wall of the process tube 150 can be the side wall of the chamber body 100.

[0069] In the embodiments disclosed in this application, the semiconductor process equipment may be an LPCVD (Low Pressure Chemical Vapor Deposition) device, and the specific type of semiconductor process equipment is not limited in the embodiments of this application.

[0070] The above embodiments of this utility model focus on describing the differences between the various embodiments. As long as the different optimization features of the various embodiments are not contradictory, they can be combined to form a better embodiment. For the sake of brevity, they will not be described in detail here.

[0071] The embodiments of the present invention have been described above with reference to the accompanying drawings. However, the present invention is not limited to the specific embodiments described above. The specific embodiments described above are merely illustrative and not restrictive. Those skilled in the art can make many other forms under the guidance of the present invention without departing from the spirit and scope of the claims, and all of these forms are within the protection scope of the present invention.

Claims

1. A semiconductor process chamber, characterized in that, Includes a chamber body (100) and a first transmission conduit (200), wherein: The chamber body (100) has an interconnected inner cavity (110) and an opening (120). The first transmission pipe (200) is disposed in the inner cavity (110) and is used to transport process fluid from a fluid source to the inner cavity (110). The first transmission pipe (200) includes a connected transmission section (210) and an output section (220). At least a portion of the transmission section (210) extends from the opening (120) in a direction away from the opening (120). The output section (220) is provided with an output hole (230) for outputting the process fluid into the inner cavity (110).

2. The semiconductor process chamber according to claim 1, characterized in that, The semiconductor process chamber further includes an annular connector (310) disposed at the opening (120). The annular connector (310) is provided with a first connection hole (311). The transmission segment (210) is sealed to the first connection hole (311) and is used to receive the process fluid output from the first connection hole (311).

3. The semiconductor process chamber according to claim 1, characterized in that, The semiconductor process chamber further includes a flow equalization device (320), which is disposed in the inner cavity (110) and is located near the opening (120) so that the process fluid output from the output hole (230) is uniformly processed by the flow equalization device (320).

4. The semiconductor process chamber according to claim 3, characterized in that, The flow equalization device (320) includes a plurality of flow equalization plates (321), which are spaced apart from each other and opposite to each other. Each of the output holes (230) is located between the corresponding flow equalization plate (321) and the opening (120) in a direction parallel to the central axis of the inner cavity (110).

5. The semiconductor process chamber according to claim 4, characterized in that, There are multiple output holes (230), and the multiple output holes (230) are provided in the output section (220), and at least some of the output holes (230) are oriented perpendicular to the central axis of the inner cavity (110).

6. The semiconductor process chamber according to claim 5, characterized in that, A portion of the output holes (230) are located on the wall of the output section (220), and the orientation of a portion of the output holes (230) is perpendicular to the central axis of the inner cavity (110). Another portion of the output holes (230) are located at the port of the free end of the output section (220).

7. The semiconductor process chamber according to claim 6, characterized in that, The first transmission conduit (200) further includes a reversing nozzle (240), which is located between the corresponding flow equalizer (321) and the opening (120) in a direction parallel to the central axis of the inner cavity (110), and the nozzle of the reversing nozzle (240) is perpendicular to the direction of the central axis of the inner cavity (110). The reversing nozzle (240) is connected to the free end and communicates with another part of the output hole (230).

8. The semiconductor process chamber according to claim 5, characterized in that, The free end of the output section (220) is a closed end, and each output hole (230) is provided on the tube wall of the output section (220).

9. The semiconductor process chamber according to claim 3, characterized in that, The semiconductor process chamber also includes a door (410) and a support paddle (420) fixedly connected to the door (410) and movable following the door (410) during opening and closing. The flow equalization device (320) is movably disposed on the support paddle (420). When the cavity door (410) closes the opening (120) and the carrier paddle (420) carries the carrier boat support frame (510), the carrier paddle (420) is at least partially located in the inner cavity (110).

10. The semiconductor process chamber according to claim 1, characterized in that, The diameter of the output hole (230) increases from the lumen of the first transmission pipe (200) toward the outside of the lumen.

11. The semiconductor process chamber according to claim 1, characterized in that, The transmission segment (210) includes at least one bent segment (211) that bends toward the opening (120).

12. The semiconductor process chamber according to claim 11, characterized in that, The transmission segment (210) includes a bent segment (211), a first straight segment (212), and a second straight segment (213); The first end of the first straight segment (212) is close to the opening (120) and is used to receive the process fluid output from the fluid source, and the second end of the first straight segment (212) is away from the opening (120) and is connected to the first end of the bent segment (211); The first end of the second straight segment (213) is close to the opening (120) and connected to the second end of the output segment (220). The second end of the second straight segment (213) is far from the opening (120) and connected to the second end of the bent segment (211). The first end of the output segment (220) is a free end and close to the opening (120). The second end of the output segment (220) is far from the opening (120).

13. The semiconductor process chamber according to claim 1, characterized in that, The semiconductor process chamber further includes a first connector (610), which has a first interface (611) and two opposite second interfaces (612). There are two first transmission pipes (200), which are connected to the two second interfaces (612) in a one-to-one correspondence. The first connector (610) is used to transport the process fluid in the fluid source to the corresponding first transmission pipe (200).

14. The semiconductor process chamber according to claim 1, characterized in that, The chamber body (100) also includes a bottom wall (140), which is opposite to the opening (120). The bottom wall (140) is provided with a plurality of second connection holes that communicate with the inner cavity (110). The semiconductor process chamber also includes a plurality of air inlet plugs (620), a plurality of first connecting sleeves (630), and a plurality of second transmission pipes (700). The plurality of air inlet plugs (620) and the plurality of first connecting sleeves (630) are all located outside the inner cavity (110). The plurality of first connecting sleeves (630) are all connected to the bottom wall (140). The third connecting holes (631) of the plurality of first connecting sleeves (630) are connected to the plurality of second connecting holes one by one. The first ends of the plurality of second transmission pipes (700) pass through the plurality of second connecting holes and the plurality of third connecting holes (631) and extend into the inner cavity (110). The second ends of the plurality of second transmission pipes (700) are positioned in the plurality of third connecting holes (631) one by one. The plurality of air inlet plugs (620) are sealed and fitted with the plurality of third connecting holes (631) one by one, and are inserted into the second ends of the plurality of second transmission pipes (700) one by one.

15. The semiconductor process chamber according to claim 14, characterized in that, The semiconductor process chamber also includes a plurality of mounting bases (640) and a plurality of limiting members (650) disposed outside the inner cavity (110). The plurality of air inlet plugs (620) are disposed on the plurality of mounting bases (640) in a corresponding manner. The plurality of mounting bases (640) seal and block the plurality of third connection holes (631) in a corresponding manner, so that the plurality of air inlet plugs (620) are sealed and fitted with the plurality of third connection holes (631) in a corresponding manner. The mounting base (640) includes an annular protrusion (641) disposed in the corresponding third connecting hole (631). The annular protrusion (641) is provided with a first positioning hole (642). The pipe wall of the second transmission pipe (700) is provided with a second positioning hole (710). The second ends of the plurality of second transmission pipes (700) are respectively inserted into the corresponding annular protrusion (641). The plurality of limiting members (650) are inserted one-to-one into the corresponding first positioning hole (642) and the corresponding second positioning hole (710).

16. The semiconductor process chamber according to claim 15, characterized in that, The semiconductor process chamber also includes a plurality of seals (660). The outer wall of the annular protrusion (641) is provided with a first stepped surface (643). The first positioning hole (642) and the first stepped surface (643) are distributed along a direction away from the bottom wall (140). The inner wall of the third connecting hole (631) is provided with a second stepped surface. The plurality of seals (660) are respectively clamped between the corresponding first stepped surface (643) and the corresponding second stepped surface, so that the plurality of mounting seats (640) seal and block the plurality of third connecting holes (631) one by one.

17. The semiconductor process chamber according to claim 16, characterized in that, The semiconductor process chamber further includes a plurality of second connecting sleeves (670), which are fitted one-to-one with the plurality of first connecting sleeves (630) and connected one-to-one with the plurality of mounting seats (640). The plurality of second connecting sleeves (670) press the corresponding mounting seat (640) against the corresponding first connecting sleeve (630) so that the corresponding first step surface (643) is pressed against the corresponding second step surface by the corresponding sealing element (660).

18. A semiconductor process apparatus, characterized in that, Includes a cavity door (410) and a semiconductor process chamber according to any one of claims 1-17, the chamber body (100) having an opening (120) communicating with the inner cavity (110), the cavity door (410) being used to open or close the opening (120).

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