Method for producing a sample on an object, computer program product and material processing equipment for carrying out the method

Abstract

Method for producing at least one sample (2008A to 20081) on an object (125, 425) using a material processing device (2000) which has at least one light beam device (2003) for providing at least one light beam, the method comprising the following steps: - Guiding the light beam over a surface of the object (125, 425) along a first line (L1, L2, L3) in a first direction (RI1, RI2, RI3) using a guiding device (2003A) for the light beam and / or by moving the object (125, 425) using a movable object table (122, 424) on which the object (125, 425) is arranged, wherein material of the object (125, 425) is removed when guiding the light beam over the surface of the object (125, 425), - Changing the first direction (RI1, RI2, RI3) into a second direction (RI1, RI2, RI3), wherein the first direction (RI1, RI2, RI3) is changed into the second direction (RI1, RI2, RI3) by rotating the first line (L1, L2, L3) about an axis of rotation on the surface of the object (125, 425), - Guiding the light beam across the surface of the object (125, 425) along a second line (L1, L2, L3) in the second direction (RI1, RI2, RI3), wherein the first direction (RI1, RI2, RI3) and the second direction (RI1, RI2, RI3) are different, wherein when guiding the light beam along the second line (L1, L2, L3) across the surface of the object (125, 425) material of the object (125, 425) is removed, wherein - the light beam is pulsed by the light beam device (2003) and directed onto the surface of the object (125, 425) in such a way that, in a first operating state of the light beam device (2003), the light beam removes material from the object (125, 425), and that, in a second operating state, the light beam is not directed onto the object (125, 425), and wherein - in the first operating state the sample (2008A to 20081) is produced by removing material from the object (125, 425).

Description

[0001] The invention relates to a method for producing at least one sample of an object using a material processing device, which, for example, comprises a particle beam device. The invention further relates to a computer program and a material processing device for carrying out the method.

[0002] Electron beam instruments, in particular a scanning electron microscope (hereinafter also referred to as SEM) and / or a transmission electron microscope (hereinafter also referred to as TEM), are used to examine objects (samples) in order to obtain knowledge about their properties and behavior under certain conditions.

[0003] In a SEM, an electron beam (hereinafter also called a primary electron beam) is generated by a beam generator and focused onto the object under investigation by a beam guidance system. A deflection device guides the primary electron beam in a raster pattern across the surface of the object. The electrons of the primary electron beam interact with the object. As a result of this interaction, electrons are emitted from the object (so-called secondary electrons), and electrons from the primary electron beam are backscattered (so-called backscattered electrons). The secondary and backscattered electrons are detected and used to generate an image. This produces an image of the object under investigation. Furthermore, interaction radiation, such as X-rays and cathodoluminescence, is generated as a consequence of the interaction.The interaction radiation is used in particular for the analysis of the object.

[0004] In a TEM, a primary electron beam is also generated by a beam generator and focused onto the object under investigation using a beam guidance system. The primary electron beam passes through the object. As the primary electron beam passes through the object, the electrons interact with the material. The electrons passing through the object are then focused onto a fluorescent screen or a detector (such as a camera) by a system consisting of a lens and a projector. This focusing can also be done in the scan mode of the TEM. Such a TEM is generally referred to as a STEM.Additionally, it may be possible to detect electrons backscattered from the object under investigation and / or secondary electrons emitted by the object under investigation using a further detector in order to image the object under investigation.

[0005] Furthermore, it is known from the prior art to use combination devices for examining objects, in which both electrons and ions can be directed onto the object under investigation. For example, it is known to equip a SEM with an additional ion beam column. Ions are generated by means of an ion beam generator arranged in the ion beam column, which are used for the preparation of an object (for example, removing material from the object or applying material to the object) or for imaging. The SEM serves here in particular to observe the preparation, but also for further examination of the prepared or unprepared object.

[0006] In another known particle beam device, material is applied to the object, for example, by introducing a gas. This known particle beam device is a combination device that provides both an electron beam and an ion beam. The particle beam device comprises an electron beam column and an ion beam column. The electron beam column provides an electron beam that is focused onto an object. The object is located in a sample chamber maintained under vacuum. The ion beam column provides an ion beam that is also focused onto the object. Using the ion beam, for example, a layer of the object's surface is removed. After this layer is removed, another surface of the object is exposed.A gaseous precursor substance can be introduced into the sample chamber by means of a gas supply device. It is known to design the gas supply device with a needle-shaped element that can be positioned very close to a location on the object, at a distance of up to a few hundred micrometers, so that the gaseous precursor substance can be guided to this location as precisely as possible and in a high concentration. Through the interaction of the ion beam with the gaseous precursor substance, a layer of the substance is deposited on the surface of the object. For example, it is known to introduce gaseous phenanthrene into the sample chamber via the gas supply device as the gaseous precursor substance. Then, essentially, a layer of carbon or a carbon-containing layer is deposited on the surface of the object.It is also known to use a metal-containing gaseous precursor substance to deposit a metal or a metal-containing layer on the surface of the object. However, the deposits are not limited to carbon and / or metals. Rather, any substance can be deposited on the surface of the object, for example, semiconductors, insulators, or other compounds. Furthermore, it is known that the gaseous precursor substance, when interacting with a particle beam, is used to remove material from the object.

[0007] Applying material to the object and / or removing material from the object is used, for example, to place a marking on the object. In the prior art, the marking is used, for example, to position the electron beam and / or the ion beam.

[0008] It is known to produce a sample on an object using an ion beam device, wherein the sample has a cylindrical shape. The diameter of such a sample can range, for example, from less than 1 µm to several hundred µm. The height of such a sample can range from several tens of µm to approximately 1 mm.

[0009] Cylindrical samples are examined using known methods, which are explained below.

[0010] It is known from the prior art to determine the micromechanical properties of the material of a cylindrical sample. For example, the deformation of the cylindrical sample is measured by applying pressure to a surface of the sample. Such a measurement is carried out, in particular, in a particle beam instrument. For this purpose, the particle beam instrument has a corresponding in-situ measuring device. The measurement results obtained using this known method are used in mathematical models to determine the mechanical material properties of the cylindrical sample. For this determination to be accurate, it is desirable that the sample has a cylindrical shape that is as close to exacting as possible, on which the mathematical models are based.

[0011] It is also known from the prior art to examine a cylindrical sample using synchrotron radiation and thereby generate a series of projection images of the cylindrical sample from different directions. From this series of projection images, a three-dimensional structure of the interior of the cylindrical sample can be determined with high spatial resolution. Such investigations are of interest, for example, in the analysis of subcellular structures in biological samples. Here, too, it is desirable for the sample to have a shape that is as cylindrical as possible in order to enable artifact-free determination of the structure.

[0012] Furthermore, it is known from the prior art to examine a cylindrical sample with X-rays in order to create a series of projection images of the cylindrical sample from different directions. From this series of projection images, a three-dimensional structure of the interior of the cylindrical sample can be determined with low to medium spatial resolution. Such investigations are of interest, for example, in the analysis of defects in microelectronic components or for the analysis of the porosity of biological or geological samples. Here, too, it is desirable for the sample to have a shape that is as cylindrical as possible in order to enable artifact-free determination of the structure.

[0013] A sample with a highly cylindrical shape is desirable for atom probe tomography. Atom probe tomography is a quantitative analytical method used to determine the distribution of elements in an object. In atom probe tomography, a sample is examined that has a tip with a tip radius, for example, on the order of 10 nm to 100 nm. An electric field with a voltage is applied to this tip, the field strength of which is insufficient to cause atoms to detach from the tip. A short voltage pulse is then applied to the tip in addition to the aforementioned voltage. This causes the field strength to increase until it is sufficient to detach individual ions from the tip through field vaporization. Alternatively, a short laser pulse can also be used instead of the short voltage pulse.An atom, detached as an ion, is guided by an electric field to a position-sensitive detector. Since the time of the voltage pulse or laser pulse is known, the time at which the ion was detached from the tip is also known. From the flight time of the ion from the tip to the position-sensitive detector, the mass of the ion can then be determined, more precisely, the ratio of its mass to its charge. The x and y positions of the atom at the tip can be determined from the ion's point of impact on the position-sensitive detector. The z position of the atom within the tip is determined by knowing the vaporization sequence. In other words, ions that strike the position-sensitive detector later are positioned further within the tip than ions that strike it earlier. The sample with the tip can, for example, be produced electrochemically.Furthermore, it is known to produce the sample with the tip in a combination device comprising an electron beam column and an ion beam column. In particular, it is provided that the tip of the sample is produced by ablating material from the object using an ion beam. The ablation of the material is monitored by imaging with the electron beam. The more cylindrical the sample already is, the less material needs to be removed from the sample during ion beam ablation to produce the tip. The less material that needs to be removed, the more samples can be produced in a given time.

[0014] The following section discusses methods known from the prior art for producing a cylindrical sample.

[0015] For example, it is known to produce a cylindrical sample by cutting it out of a larger object using an ion beam directed essentially perpendicular to the object's surface. Alternatively, a piece of material already cut from a larger object is processed with the same ion beam, also directed essentially perpendicular to the surface. The ion beam is moved in circular paths around a center point with a decreasing radius. With the known method, it is possible to produce several cylindrical samples sequentially in a single operation. However, it has been found that it is difficult to create a truly cylindrical sample using this known method. Instead, a sample produced using this method tends to resemble a truncated cone.To reduce the angle between the generatrix and the cone axis of the frustoconical feature, and thus bring the sample closer to a cylindrical shape, it was considered to continuously tilt the sample relative to the ion beam during its production using the known method. However, it was found that the tilting of the sample would need to be precise, which could only be achieved with very complex mechanics. For this reason, it is known to approximate the cylindrical shape of the sample by selecting an ion beam with a very low beam current of a few nanoamperes in a final processing step. This is because it is known that when material is removed from the frustoconical feature of the sample with an ion beam, the angle between the generatrix and the cone axis of the frustoconical feature decreases at low beam currents.The final processing step produces a basically cylindrical sample. However, with a low beam current, only a small amount of material is removed, so producing such a sample can take up to several hours.

[0016] Furthermore, it is known to produce the cylindrical sample by cutting it out of a larger object using an ion beam directed essentially parallel to the object's surface. Alternatively, to produce the cylindrical sample, a piece of material already cut from a larger object is processed with the ion beam directed essentially parallel to its surface. The ion beam is moved continuously and up and down in a direction perpendicular to the surface of the object or material. Additionally, the object or material is rotated about an axis located at the site of the final sample and oriented perpendicular to its surface. This known method achieves a nearly cylindrical sample shape.However, this known method is very time-consuming due to the aforementioned rotational movement and the movement of the ion beam. Producing a single cylindrical sample can take up to several hours. Furthermore, the aforementioned known method is not yet suitable for automation to produce multiple cylindrical samples in a single operation.

[0017] Furthermore, another method for producing the cylindrical sample is known, in which the cylindrical sample is cut out of an object using a laser beam from a laser beam device. For this purpose, the laser beam is moved spirally around a center point with a decreasing radius. The time required to produce a cylindrical sample with this known method ranges from a few seconds to a few minutes. However, it has also been shown that it is difficult to produce a nearly cylindrical sample with this known method. Rather, a sample produced with this known method more closely resembles a sample with a frustoconical shape.To reduce the angle between a generatrix and a cone axis of the frustoconical structure, and thus bring the sample closer to a cylindrical shape, it was considered to continuously tilt the sample relative to the laser beam during its fabrication using the known method. However, it turned out that the tilting of the sample would need to be precise, which could only be achieved with very complex mechanics. While continuously tilting the laser beam itself would also be possible to bring the sample closer to a cylindrical shape, this would require very precise telecentric optics to accurately guide the laser beam. Such optics are quite expensive. For this reason, a different method for producing the cylindrical shape of the sample was chosen in the known process.The sample, cut out with the laser beam, is post-processed with an ion beam to achieve a substantially cylindrical shape. Since the ion beam current is typically low (for example, in the range of a few nanoamperes), the post-processing to achieve the cylindrical shape takes a considerable amount of time. While the known method is suitable for producing multiple cylindrical samples in a single operation, the spiral path of the laser beam limits the minimum distance between two cylindrical samples, thus also limiting the number of cylindrical samples that can be produced.

[0018] Regarding the state of the art, reference is made to US 2014 / 0131195 A1, US 2016 / 0126059 A1 and US 5 055 696 A.

[0019] The invention is based on the objective of providing a method for producing a sample on an object, a computer program product and a material processing device with which a sample that is as cylindrical as possible or several cylindrical samples can be produced in a short time.

[0020] According to the invention, this problem is solved by means of a method for producing at least one sample of an object having the features of claim 1. A computer program product with program code that is loaded or loadable into a processor and that, when executed, controls a material processing device such that a method according to the invention is carried out, is provided by claim 17. Furthermore, the invention relates to a material processing device having the features of claim 18. Further features of the invention will become apparent from the following description, the appended claims, and / or the accompanying figures.

[0021] The method according to the invention serves to produce at least one sample of an object using a material processing device which includes at least one light beam device for providing at least one light beam. Embodiments of the light beam device are discussed in more detail below. The object's material can be processed using the material processing device such that at least one sample, and in particular a plurality of samples, is produced on the object. For example, the method is carried out automatically, partially automatically, or manually. Therefore, for example, individual, several, or all process steps can be carried out automatically and / or manually. In particular, the material processing device comprises a particle beam device, a mechanical ablation device, and / or an ion beam device. These will be discussed in more detail below.

[0022] The method according to the invention comprises the steps described below.

[0023] The light beam is guided across a surface of the object along a first line in a first direction. A light beam guiding device is used to guide the light beam. For example, the guiding device includes at least one mirror, at least one lens, a system of several mirrors, a system of several lenses, and / or a system of several mirrors and several lenses. Additionally or alternatively, the object is positioned on a movable stage and moved relative to the light beam. In other words, the light beam is moved relative to the object to guide it. This relative movement is achieved by moving the light beam and / or the stage. As the light beam is guided across the surface of the object, material is removed.This results in an interaction between the light beam and the object's material. Due to this interaction, material is removed from the object, thus producing the sample, or at least a part of the sample.

[0024] Furthermore, in the method according to the invention, the direction of movement of the light beam is changed. More precisely, the first direction is changed to a second direction, whereby the first direction is changed to the second direction by rotating the first line about an axis of rotation on the surface of the object. The first direction and the second direction are different from each other. The light beam is then guided across the surface of the object along a second line in the second direction. As the light beam is guided along the second line across the surface of the object, material is again removed from the object. Thus, as the light beam is guided along the second line, it interacts with the material of the object. Due to this interaction, material is removed from the object, so that the sample, or at least a part of the sample, is produced.

[0025] In the method according to the invention, the light beam is provided by the light beam device in pulsed form. For example, the light beam is provided with pulse durations in the picosecond or femtosecond range. The light beam device has a first operating state and a second operating state. In the first operating state, the pulsed light beam is directed onto the surface of the object in such a way that the light beam removes material from the object to produce the sample or at least a part of the sample. In the second operating state, the light beam is not directed onto the object. In other words, the second operating state is the state of the light beam device that lies between the provision of the light beam at a first duration and the provision of the light beam at a second duration.In other words, the light beam is initially supplied during the first time period. Then there is a time period during which the light beam is not supplied. Following this, the light beam is supplied during the second time period. In the first operating state, the sample, or at least a part of the sample, is produced by the removal of material from the object due to the interaction of the light beam with the object.

[0026] The method according to the invention is particularly well suited for producing a sample that is as cylindrical as possible, or several cylindrical samples, in a short time. For example, a sample can be produced using the method according to the invention whose sidewalls are oriented at right angles or nearly at right angles to a surface of the sample. For example, the sidewalls are oriented at an angle of only up to 3° from the right angle. In particular, a sample with a high aspect ratio (i.e., a high ratio of the sample height to the smallest lateral dimension of the sample) can be produced using the method according to the invention. It has been shown that the use of pulsed light beams from the light beam device makes it possible to form a sample that is as cylindrical as possible. In addition, it has been shown that the method according to the invention readily enables the simultaneous production of several cylindrical samples.Once the cylindrical sample(s) has been produced, they are separated from the object in one embodiment of the method according to the invention. This is done, in particular, using an ion beam provided by a particle beam device. Subsequently, the cylindrical sample(s) are analyzed.

[0027] For example, the micromechanical properties of the material of a cylindrical sample are determined. In particular, the deformation of the cylindrical sample by applying pressure to a surface of the sample is measured. Such a measurement is performed, for example, in a particle beam instrument. The particle beam instrument has a corresponding in-situ measuring device for this purpose. The measurement results obtained are used in mathematical models to determine the mechanical material properties of the cylindrical sample.

[0028] For example, a cylindrical sample is examined using synchrotron radiation, generating a series of projection images of the sample from different directions. From this series of projection images, a three-dimensional structure of the sample's interior can be determined with high spatial resolution. Such investigations are of interest, for instance, in the analysis of subcellular structures in biological samples.

[0029] For example, a cylindrical sample is examined using X-rays to create a series of projection images of the sample from different directions. From this series of projection images, a three-dimensional structure of the interior of the cylindrical sample can be determined with low to medium spatial resolution. Such investigations are of interest, for example, in the analysis of defects in microelectronic components or for analyzing the porosity of biological or geological samples.

[0030] For example, the diameter of a manufactured cylindrical sample ranges from less than 1 µm to several hundred µm. The height of such a sample can range from several tens of µm to approximately 1 mm.

[0031] In one embodiment of the method according to the invention, it is additionally or alternatively provided that the sample is a first sample. In the first operating state of the light beam device, at least one further sample in the form of a second sample is produced by removing material from the object using the light beam. In other words, not only a single sample is produced using the method according to the invention, but several samples, for example, the aforementioned first sample and the aforementioned second sample. Further embodiments with regard to the number of samples that can be produced are explained below.

[0032] In a further embodiment of the method according to the invention, it is additionally or alternatively provided that first the first sample (or at least a part of the first sample) and then the second sample (or at least a part of the second sample) are produced. Alternatively, it is provided that in a single step of the method according to the invention, the first sample (or at least a part of the first sample) and the second sample (or at least a part of the second sample) are produced.

[0033] In a further embodiment of the method according to the invention, it is additionally or alternatively provided that the first sample has a first surface with a first center point. Furthermore, the second sample has a second surface with a second center point. In particular, it is provided that the first surface and / or the second surface are aligned parallel or substantially parallel to the surface of the object. In this embodiment of the method according to the invention, it is now provided that the first sample and the second sample are produced such that the first center point is spaced apart from the second center point, wherein the space has at least one of the following features: (i) the distance corresponds to a diameter or a multiple thereof of the diameter of the light beam; (ii) the distance is, for example, less than 900 µm, less than 800 µm, less than 700 µm, less than 600 µm, less than 500 µm, less than 400 µm, less than 300 µm, less than 200 µm, less than 100 µm, less than 80 µm, less than 60 µm, less than 50 µm, less than 30 µm, less than 20 µm or less than 10 µm.

[0034] For example, the diameter of the light beam is the diameter of the light beam at or near the focus, particularly within a range of ± (30 µm to 50 µm) from the focus. Additionally or alternatively, the diameter of the light beam is the diameter of the light beam at the point where the light beam strikes the object or at the point of processing of the object's material upon which the light beam strikes.

[0035] Considerations have shown that a cylindrical sample can be obtained particularly well if the distance corresponds to the diameter or a multiple of the diameter of the light beam.

[0036] The distance is defined, for example, as follows. A first line, perpendicular to the first surface, passes through the first midpoint. Furthermore, a second line, perpendicular to the second surface, passes through the second midpoint. The distance between the first and second samples is the distance between the first and second lines. For example, the distance is the length of a line segment that intersects both the first and second lines perpendicularly. Alternatively, the distance could be, for example, the minimum distance between the first and second lines.

[0037] The above can also be expressed as follows, for example. The distance between the first sample and the second sample is less than 30 µm, less than 20 µm, or less than 10 µm. For example, the first sample has a first edge. Furthermore, the second sample has a second edge. The distance between the first sample and the second sample is the distance between the first edge and the second edge. For example, the distance is the length of a distance line that runs from a first point on the first edge to a second point on the second edge. In particular, the distance is, for example, the minimum distance between the first edge and the second edge.

[0038] In a further embodiment of the method according to the invention, it is additionally or alternatively provided that a first marking is arranged on the first surface of the first sample and / or a second marking is arranged on the second surface. For example, the first marking and / or the second marking are arranged using a light beam and / or a particle beam provided by a particle beam device. The first marking and the second marking serve to make the first sample and the second sample uniquely identifiable.

[0039] In one embodiment of the method according to the invention, it is additionally or alternatively provided that the producible sample is part of a plurality of producible samples. In this embodiment of the method according to the invention, it is provided that in the first operating state of the light beam device, the plurality of samples is produced by removing material from the object using the light beam. In particular, it is provided that the plurality of samples comprises at least 5 samples, at least 10 samples, or at least 15 samples on the object. However, the invention is not limited to the aforementioned number of samples. Rather, the plurality of samples can comprise any number of samples that is suitable for the invention.

[0040] In a further embodiment of the method according to the invention, it is additionally or alternatively provided that, in the first operating state of the light beam device, the individual samples of the plurality of samples are produced one after the other. In other words, one of the samples of the plurality of samples is produced first, followed by another sample of the plurality of samples. The above is repeated until all samples of the plurality of samples have been produced. Alternatively, it is provided that several samples of the plurality of samples are produced (or at least a subset of several samples of the plurality of samples are produced) in a single step of the method according to the invention.Alternatively, it is provided that in a single step of the inventive process all samples of the plurality of samples are produced (or at least a part of all samples of the plurality of samples is produced).

[0041] In a further embodiment of the method according to the invention, it is additionally or alternatively provided that each of the plurality of samples has a surface with a center point. In particular, it is provided that each surface is aligned parallel or substantially parallel to the surface of the object. In this embodiment of the method according to the invention, it is provided that at least the center point of the surface of a first sample of the plurality of samples is spaced apart from the center point of the surface of at least a second sample of the plurality of samples, wherein the space has at least one of the following features: (i) the distance corresponds to a diameter or a multiple thereof of the diameter of the light beam; (ii) the distance is, for example, less than 900 µm, less than 800 µm, less than 700 µm, less than 600 µm, less than 500 µm, less than 400 µm, less than 300 µm, less than 200 µm, less than 100 µm, less than 80 µm, less than 60 µm, less than 50 µm, less than 30 µm, less than 20 µm or less than 10 µm.

[0042] Regarding the possible definitions of the diameter of the light beam, reference is made to the explanations above, which also apply here.

[0043] No further sample from the set of samples is positioned between the first and second samples. In other words, the first and second samples are positioned directly next to each other, so that no further sample from the set of samples is positioned between them.

[0044] Considerations have shown that a cylindrical sample can be obtained particularly well if the distance corresponds to the diameter or a multiple of the diameter of the light beam.

[0045] The aforementioned distance is defined, for example, as follows. A first line passes through the center of the surface of the first sample and is perpendicular to that surface. Furthermore, a second line passes through the center of the surface of the second sample and is perpendicular to that surface. The distance between the first and second samples is the distance between the first and second lines. For example, the distance is the length of a line segment that intersects both the first and second lines perpendicularly. Alternatively, the distance is, for example, the minimum distance between the first and second lines. The above can also be expressed, for example, as follows: The distance between the first and second samples is less than 30 µm, less than 20 µm, or less than 10 µm.For example, the first sample has a first boundary. Furthermore, the second sample has a second boundary. The distance between the first and second samples is the distance between the first boundary and the second boundary. For example, the distance is the length of a distance line that runs from a first point on the first boundary to a second point on the second boundary. In particular, the distance is, for example, the minimum distance between the first boundary and the second boundary.

[0046] In a further embodiment of the method according to the invention, it is additionally or alternatively provided that a marking is arranged on the surface of each of the samples in the plurality of samples. For example, the marking on the surface of each of the samples in the plurality of samples is arranged using the light beam and / or the particle beam. The markings on the surfaces of the samples in the plurality of samples serve to make the individual samples uniquely identifiable.

[0047] In one embodiment of the method according to the invention, it is additionally or alternatively provided that the first direction is changed to the second direction by rotating the first line in a plane. Additionally or alternatively, it is provided that the first direction is changed to the second direction by rotating the first line in a first plane and by rotating the first line in a second plane. Furthermore, additionally or alternatively, it is provided that the first line extends from a first point on the surface of the object towards a second point on the surface of the object, with the axis of rotation intersecting the first line.

[0048] In a further embodiment of the method according to the invention, it is additionally or alternatively provided that the axis of rotation is a first axis of rotation. Furthermore, this embodiment of the method according to the invention provides that the second direction is changed into a third direction. It is provided that the second direction is changed into the third direction by rotating the second line about a second axis of rotation on the surface of the object. The second direction and the third direction are different from each other. The light beam is then guided across the surface of the object along a third line in the third direction. As the light beam is guided along the third line across the surface of the object, material from the object is again removed. Thus, when the light beam is guided along the third line, an interaction of the light beam with the material of the object occurs.Due to the interaction of the light beam with the material of the object, material is removed from the object, so that the sample or at least part of the sample is produced.

[0049] In yet another embodiment of the method according to the invention, it is additionally or alternatively provided that the second direction is changed to the third direction by rotating the second line in the plane. Additionally or alternatively, it is provided that the second direction is changed to the third direction by rotating the second line in the first plane and by rotating the second line in the second plane. Again, additionally or alternatively, it is provided that the second line extends from a third point on the surface of the object towards a fourth point on the surface of the object, with the second axis of rotation intersecting the second line. Again, additionally or alternatively, it is provided that the third line extends from a fifth point on the surface of the object towards a sixth point on the surface of the object.

[0050] In a further embodiment of the method according to the invention, it is additionally or alternatively provided that a grid area is defined on the object, wherein the grid area comprises a plurality of grid lines. The light beam is guided along the plurality of grid lines. For example, the grid lines of the plurality of grid lines are arranged parallel to one another. A grid line is, for example, designed as a line. In particular, the first line, the second line, and / or the third line is / are part of the plurality of grid lines. For example, it is provided that the light beam is initially guided along two or more, preferably along all, grid lines of the grid area. In particular, the light beam is guided from a first grid line end along a grid line to a second grid line end of the grid line.Alternatively, the light beam is guided from the second end of the grid line along the grid line to the first end of the grid line. However, the invention is not limited to such a guiding of the light beam across the grid lines. Rather, any type of guiding across the grid lines suitable for the invention can be used. When the first direction is changed to the second direction, in this embodiment of the method according to the invention, the aforementioned grid area rotates around the axis of rotation, so that all grid lines are also rotated. The rotation of the grid area and the subsequent guiding of the light beam across the grid lines of the grid area are repeated until the sample has been produced or the multiple samples have been produced on the object.

[0051] In a further embodiment of the method according to the invention, it is additionally or alternatively provided that the light beam is guided over the surface of the object in steps of less than 300 nm, less than 200 nm or less than 100 nm.

[0052] In one embodiment of the method according to the invention, it is additionally or alternatively provided that the sample is processed with a particle beam, the particle beam being supplied by a particle beam generator of the material processing device. In this embodiment, it is therefore provided that after the sample has been produced using the light beam, the produced sample is post-processed with the particle beam in order to bring the produced sample even closer to a cylindrical shape and / or to modify the cylindrical shape of the sample. For example, in this embodiment, a tip is produced on the sample, in particular to enable investigations of the tip using atom probe tomography. With regard to atom probe tomography, reference is made to the explanations given above, which also apply here.

[0053] In a further embodiment of the method according to the invention, it is additionally or alternatively provided that a laser beam, in particular a pulsed laser beam, is used as the light beam, wherein the light beam device is designed as a laser beam device. For example, it is provided that a laser beam from an ultrashort pulse laser beam device is used as the light beam. In the foregoing and also below, an ultrashort pulse laser beam device is understood to be a laser beam device that provides a pulsed laser beam with pulse durations in the picosecond or femtosecond range.

[0054] In a further embodiment of the method according to the invention, it is additionally or alternatively provided that a layer, for example a lacquer layer or synthetic resin layer, is applied to the surface of the object. In particular, it is provided that the thickness of the layer is substantially 10% to 20% of the height of the sample to be produced. It is particularly provided that the layer is applied to the surface of the object in liquid form. The material of the layer is cured, for example, by evaporation of a solvent contained in the material, by heating, and / or by irradiation with UV light for a specific period of time. In this embodiment of the method according to the invention, it is now provided that the previously applied layer is removed again after the sample has been produced, for example, with a solvent.It has been shown that this embodiment of the inventive method is particularly effective in achieving a cylindrical shape in the sample. The aforementioned layer can also be applied by ion or electron beam deposition from a precursor gas in a gas injection system. However, this procedure is quite time-consuming due to the large volumes to be applied.

[0055] All described embodiments of the method according to the invention are not limited to the above-mentioned sequence of the explained process steps. Rather, any sequence of the aforementioned process steps that is suitable for the invention can be chosen in the method according to the invention.

[0056] The invention also relates to a computer program product with program code that can be loaded or is loaded into a processor of a material processing device, in particular a particle beam device, wherein the program code, when executed in the processor, controls the material processing device in such a way that a method with at least one of the preceding or following features or with a combination of at least two of the preceding or following features is carried out.

[0057] The invention also relates to a material processing device for processing an object. The material processing device according to the invention, which is explained here and also above with regard to the method, is not necessarily designed as a single device. Rather, it is envisaged, for example, that the material processing device according to the invention is designed as a system comprising several devices and / or fixtures, whereby the several devices and / or fixtures do not necessarily have to be arranged in one location. However, they can, for example, be arranged in one location. The material processing device according to the invention has at least one light beam device for providing at least one light beam. Furthermore, the material processing device according to the invention has at least one guide device for guiding the light beam.For example, the guiding device comprises at least one mirror, at least one lens, a system of several mirrors, a system of several lenses, and / or a system of several mirrors and several lenses. Additionally or alternatively, the material processing device according to the invention comprises a movable object table for arranging the object. The material processing device according to the invention also includes at least one control unit with a processor in which a computer program product with at least one of the preceding or following features or with a combination of at least two of the preceding or following features is loaded.

[0058] In one embodiment of the material processing device according to the invention, it is additionally or alternatively provided that the light beam device is designed as a laser beam device. Accordingly, the light beam is designed as a laser beam, in particular as a pulsed laser beam. For example, it is provided that the light beam device is designed as an ultrashort pulse laser beam device. As already mentioned above, an ultrashort pulse laser beam device is understood to be a laser beam device that provides a pulsed laser beam with pulse durations in the picosecond or femtosecond range.

[0059] In a further embodiment of the material processing device according to the invention, it is additionally or alternatively provided that the material processing device according to the invention comprises at least one particle beam device with at least one beam generator for generating a particle beam with charged particles. The charged particles are, for example, electrons or ions. Furthermore, the particle beam device comprises at least one objective lens for focusing the particle beam onto the object, at least one scanning device for scanning the particle beam across the object, at least one detector for detecting interaction particles and / or interaction radiation resulting from an interaction of the particle beam with the object, and at least one display device for displaying an image and / or an analysis of the object.For example, as a consequence of the interaction, particles are emitted from the object (so-called secondary particles, especially secondary electrons) and particles from the particle beam are backscattered (so-called backscatter particles, especially backscatter electrons). The secondary particles and backscatter particles are detected and used to generate images. This produces an image of the object under investigation. Furthermore, interaction radiation is generated as a consequence of the interaction, for example, X-rays and cathodoluminescence. The interaction radiation is used, in particular, for the analysis of the object.

[0060] In a further embodiment of the material processing device according to the invention, it is additionally or alternatively provided that the beam generator of the particle beam device is designed as a first beam generator and the particle beam as a first particle beam with first charged particles. Furthermore, the objective lens of the particle beam device is designed as a first objective lens for focusing the first particle beam onto the object. In addition, the particle beam device of the material processing device according to the invention has at least one second beam generator for generating a second particle beam with second charged particles. The second charged particles are, for example, ions or electrons. Furthermore, the particle beam device has at least one second objective lens for focusing the second particle beam onto the object.

[0061] In particular, the material processing device is intended to be configured as an electron beam device and / or as an ion beam device. Additionally or alternatively, the material processing device is also intended to be configured as a particle beam device.

[0062] Further suitable or practical embodiments and advantages of the invention are described below in connection with the drawings. They show: Fig. 1 a schematic representation of a material processing device according to the invention; Fig. 2 a first embodiment of a particle beam device; Fig. 3 a second embodiment of a particle beam device; Fig. 4 a third embodiment of a particle beam device; Fig. 5 a schematic representation of an object table in the form of a sample table of a particle beam device; Fig. 6 another schematic representation of the sample table according to Fig. 5; Fig. 7 a schematic representation of a process of an embodiment of a method according to the invention; Fig. 8 a schematic representation of lines along which a light beam is guided; Fig. 9 a schematic representation of a grid area on an object; Fig. 9A another schematic representation of a grid area on an object; Fig. 9B another schematic representation of a grid area on an object; Fig. 10 a schematic representation of an object from a multitude of samples; Fig. 11 a further step of an embodiment of the method according to the invention; Fig. 12 a schematic representation of a large number of samples; as well as Fig. 13 a further step of an embodiment of the method according to the invention.

[0063] The invention is now described using a material processing device designed as a particle beam device or comprising a particle beam device. Particle beam devices in the form of a SEM and in the form of a combination device comprising an electron beam column and an ion beam column are explained in more detail below. It is expressly pointed out that the invention can be used with any particle beam device, in particular with any electron beam device and / or any ion beam device.

[0064] Fig. Figure 1 shows a schematic representation of a material processing device 2000 according to the invention. The material processing device 2000 is designed for producing a sample or a plurality of samples from an object and has a movable object table 2001 for arranging the object. Furthermore, the material processing device 2000 according to the invention can have a determination device 2002 for determining an area of ​​interest on the object. For example, the determination device 2002 is designed such that the position or presumed position of an area of ​​interest can be entered into the determination device 2002. Additionally or alternatively, the determination device 2002 has a device for non-destructive examination of the object to determine an area of ​​interest.In particular, the determination device 2002 is intended to include an X-ray device, an ultrasound device and / or a lock-in thermography device with which the area of ​​interest is determined. In other words, the aforementioned determination device 2002 is used to determine the position of the area of ​​interest within the object.

[0065] The material processing device 2000 according to the invention also comprises a light beam device 2003, which provides a light beam. The light beam device 2003 is, for example, configured as a laser beam device. Accordingly, the light beam is configured as a laser beam, in particular as a pulsed laser beam. For example, it is provided that the light beam device 2003 is configured as an ultrashort pulse laser beam device. As already mentioned above, an ultrashort pulse laser beam device is understood to be a laser beam device that provides a pulsed laser beam with pulse durations in the picosecond or femtosecond range.

[0066] The material processing device 2000 according to the invention has a guide device 2003A for guiding the light beam. For example, the guide device 2003A comprises at least one mirror, at least one lens, a system of several mirrors, a system of several lenses and / or a system of several mirrors and several lenses.

[0067] Furthermore, the material processing device 2000 according to the invention comprises a particle beam device 2004 with at least one beam generator for generating a particle beam with charged particles. The charged particles are, for example, electrons or ions. Embodiments of the particle beam device 2004 are explained in more detail below.

[0068] The material processing device 2000 according to the invention also comprises a control device 2005 with a processor 2005A in which a computer program product is loaded which, when executed in the processor 2005A, controls the material processing device 2000 in such a way that a method according to the invention is carried out. This will be discussed in more detail below.

[0069] The material processing unit 2000 is configured, for example, as an electron beam device and / or as an ion beam device. Additionally or alternatively, the material processing unit 2000 is configured as the particle beam device 2004. In other words, the particle beam device 2004 itself constitutes the material processing unit 2000. Furthermore, the material processing unit 2000 is designed for processing frozen, chilled, cold, or vitrified objects. In other words, the material processing unit 2000 can be used with cryogenic technology.

[0070] Fig. Figure 2 shows a schematic representation of the particle beam device 2004 in the form of a SEM 100. The SEM 100 has a first beam generator in the form of an electron source 101, which is configured as a cathode. Furthermore, the SEM 100 is provided with an extraction electrode 102 and with an anode 103, which is mounted on one end of a beam guide tube 104 of the SEM 100. For example, the electron source 101 is configured as a thermal field emitter. However, the invention is not limited to such an electron source 101. Rather, any electron source can be used.

[0071] Electrons emitted from electron source 101 form a primary electron beam. Due to a potential difference between electron source 101 and anode 103, the electrons are accelerated to anode potential. In the embodiment shown here, the anode potential is 100 V to 35 kV relative to the ground potential of a sample chamber housing 120, for example 5 kV to 15 kV, particularly 8 kV. Alternatively, it could also be at ground potential.

[0072] Two condenser lenses are arranged on the beamline tube 104: a first condenser lens 105 and a second condenser lens 106. Looking from the electron source 101 towards a first objective lens 107, the first condenser lens 105 and then the second condenser lens 106 are arranged. It is explicitly noted that other embodiments of the SEM 100 may have only a single condenser lens. A first aperture unit 108 is arranged between the anode 103 and the first condenser lens 105. The first aperture unit 108, together with the anode 103 and the beamline tube 104, is at a high-voltage potential, namely the potential of the anode 103 or at ground. The first aperture unit 108 has numerous first aperture openings 108A, one of which is located in Fig. Figure 2 illustrates this. For example, two first aperture openings 108A are present. Each of the numerous first aperture openings 108A has a different opening diameter. By means of an adjustment mechanism (not shown), it is possible to set a desired first aperture opening 108A to an optical axis OA of the SEM 100. It is explicitly noted that in further embodiments, the first aperture unit 108 may only be provided with a single aperture opening 108A. In this embodiment, an adjustment mechanism cannot be provided. The first aperture unit 108 is then designed to be stationary. A stationary second aperture unit 109 is arranged between the first condenser lens 105 and the second condenser lens 106. Alternatively, it is provided that the second aperture unit 109 is designed to be movable.

[0073] The first objective lens 107 has pole shoes 110 in which a bore is formed. The beam guide tube 104 is guided through this bore. A coil 111 is arranged in the pole shoes 110.

[0074] An electrostatic delay device is arranged in a lower section of the beam guide tube 104. This device comprises a single electrode 112 and a tubular electrode 113. The tubular electrode 113 is located at one end of the beam guide tube 104, which faces an object 125 mounted on an object holder 114.

[0075] The tubular electrode 113, together with the beam guide tube 104, is at the potential of the anode 103, while the individual electrode 112 and the object 125 are at a lower potential than that of the anode 103. In this case, this is the ground potential of the housing of the sample chamber 120. In this way, the electrons of the primary electron beam can be slowed down to a desired energy required for the examination of the object 125.

[0076] The SEM 100 also features a scanning device 115, by which the primary electron beam can be deflected and scanned across the object 125. The electrons of the primary electron beam interact with the object 125. As a result of this interaction, interaction particles and / or interaction radiation are produced, which are detected. In particular, electrons are emitted from the surface or near-surface regions of the object 125 as interaction particles – so-called secondary electrons – or electrons from the primary electron beam are backscattered – so-called backscattered electrons.

[0077] Object 125 and the single electrode 112 can also be at different potentials, including potentials different from ground. This makes it possible to adjust the location of the delay of the primary electron beam relative to object 125. For example, if the delay is performed quite close to object 125, imaging errors are reduced.

[0078] For the detection of secondary electrons and / or backscattered electrons, a detector array comprising a first detector 116 and a second detector 117 is arranged in the beamline 104. The first detector 116 is arranged along the optical axis OA on the source side, while the second detector 117 is arranged along the optical axis OA on the object side within the beamline 104. The first detector 116 and the second detector 117 are offset from each other in the direction of the optical axis OA of the SEM 100. Both the first detector 116 and the second detector 117 each have a through-hole through which the primary electron beam can pass. The first detector 116 and the second detector 117 are approximately at the potential of the anode 103 and the beamline 104, respectively. The optical axis OA of the SEM 100 passes through the respective through-holes.

[0079] The second detector 117 is primarily used for the detection of secondary electrons. Upon exiting the object 125, the secondary electrons initially possess low kinetic energy and move in any direction. The strong suction field emanating from the tubular electrode 113 accelerates the secondary electrons towards the first objective lens 107. The secondary electrons enter the first objective lens 107 in an approximately parallel direction. The beam diameter of the secondary electrons remains small even within the first objective lens 107. The first objective lens 107 exerts a strong effect on the secondary electrons, creating a comparatively short focus with sufficiently steep angles to the optical axis OA, such that the secondary electrons diverge considerably after passing through the focus and strike the second detector 117 on its active surface.Electrons backscattered from object 125—that is, backscattered electrons which, compared to the secondary electrons, have a relatively high kinetic energy upon exiting object 125—are detected by the second detector 117 only to a small extent. The high kinetic energy and the angles of the backscattered electrons to the optical axis OA upon exiting object 125 result in a beam waist, i.e., a beam region with a minimum diameter, of backscattered electrons located near the second detector 117. A large proportion of the backscattered electrons pass through the aperture of the second detector 117. The first detector 116 therefore serves primarily to detect the backscattered electrons.

[0080] In a further embodiment of the SEM 100, the first detector 116 can additionally be equipped with a retarding grid 116A. The retarding grid 116A is arranged on the side of the first detector 116 facing the object 125. The retarding grid 116A has a negative potential with respect to the potential of the beam guide tube 104, such that only backscattered electrons with high energy pass through the retarding grid 116A to the first detector 116. Additionally or alternatively, the second detector 117 has another retarding grid, which is configured analogously to the aforementioned retarding grid 116A of the first detector 116 and has an analogous function.

[0081] Furthermore, the SEM 100 has a chamber detector 119 in the sample chamber 120, for example an Everhart-Thornley detector or an ion detector, which has a metal-coated detection surface that shields light.

[0082] The detection signals generated by the first detector 116, the second detector 117 and the chamber detector 119 are used to generate an image or images of the surface of the object 125.

[0083] It is explicitly noted that the apertures of the first aperture unit 108 and the second aperture unit 109, as well as the through-holes of the first detector 116 and the second detector 117, are exaggerated. The through-holes of the first detector 116 and the second detector 117 have a perpendicular dimension OA ranging from 0.5 mm to 5 mm. For example, they are circular and have a diameter ranging from 1 mm to 3 mm perpendicular to the optical axis OA.

[0084] In the embodiment shown here, the second aperture unit 109 is designed as a pinhole aperture and is provided with a second aperture opening 118 for the passage of the primary electron beam, which has a dimension in the range of 5 µm to 500 µm, for example 35 µm. Alternatively, in a further embodiment, the second aperture unit 109 is provided with several aperture openings that can be mechanically moved relative to the primary electron beam or that can be reached by the primary electron beam using electrical and / or magnetic deflection elements. The second aperture unit 109 is designed as a pressure-stage aperture. This separates a first region in which the electron source 101 is arranged and in which an ultra-high vacuum prevails (10 -7 hPa up to 10 -12 hPa), from a second area which has a high vacuum (10 -3 hPa up to 10 -7hPa). The second area is the intermediate pressure area of ​​the jet guide tube 104, which leads to the sample chamber 120.

[0085] Sample chamber 120 is under vacuum. A pump (not shown) is arranged on sample chamber 120 to generate the vacuum. During the Fig. In the embodiment shown in Figure 2, the sample chamber 120 is operated in a first pressure range or in a second pressure range. The first pressure range includes only pressures less than or equal to 10 -3 hPa, and the second pressure range only includes pressures greater than 10 -3 hPa. To ensure these pressure ranges, the sample chamber 120 is vacuum-sealed.

[0086] The specimen holder 114 is arranged on a specimen table 122. For example, the specimen table 122 is configured as the specimen table 2001 of the material processing device 2000. The specimen table 122 has movement units such that the specimen holder 114 is movable in three mutually perpendicular directions, namely in an x-direction (first table axis), in a y-direction (second table axis), and in a z-direction (third table axis). In addition, the specimen table 122 has movement units such that the specimen holder 114 can be rotated about two mutually perpendicular rotation axes (table rotation axes). The invention is not limited to the specimen table 122 described above. Rather, the specimen table 122 can have further translational and rotational axes along which or about which the specimen holder 114 can move.

[0087] The SEM 100 also features a third detector 121, which is located in the sample chamber 120. More precisely, the third detector 121 is positioned behind the sample stage 122 along the optical axis OA, as seen from the electron source 101. The sample stage 122, and thus the specimen holder 114, can be rotated so that the object 125, which is mounted on the specimen holder 114, can be irradiated by the primary electron beam. As the primary electron beam passes through the object 125 under investigation, the electrons interact with the material of the object 125. The electrons passing through the object 125 are detected by the third detector 121.

[0088] A radiation detector 500 is arranged at the sample chamber 120, which detects interaction radiation, for example, X-rays and / or cathodoluminescence. The radiation detector 500, the first detector 116, the second detector 117, and the chamber detector 119 are connected to a control unit 123, which includes a monitor 124. The third detector 121 is also connected to the control unit 123. This is not shown for clarity. The control unit 123 processes detection signals generated by the first detector 116, the second detector 117, the chamber detector 119, the third detector 121, and / or the radiation detector 500 and displays them as images or spectra on the monitor 124.

[0089] The control unit 123 further comprises a database 126 in which data is stored and from which data is read. For example, the control unit 123 is configured as the control device 2005 of the material processing device 2000. The control unit 123 comprises a processor 127, which is configured, for example, as the processor 2005A and / or into which a computer program product with program code is loaded which, when executed, controls the material processing device 2000 and / or the SEM 100 such that the method according to the invention is carried out. This will be discussed in more detail below.

[0090] The SEM 100 features a gas supply device 1000, which serves to supply a gaseous precursor to a specific position on the surface of the object 125. The gas supply device 1000 includes a gas reservoir in the form of a precursor reservoir 1001. The precursor is contained in the precursor reservoir 1001, for example, as a solid, gaseous, or liquid substance. By heating and / or cooling the precursor, the equilibrium between the solid, liquid, and gaseous phases is adjusted such that the required vapor pressure is available. For example, phenanthrene is used as the precursor. In this case, essentially a layer of carbon or a carbon-containing layer is deposited on the surface of the object 125. Alternatively, a metal-containing precursor can be used, for example, to deposit a metal or a metal-containing layer on the surface of the object 125.The deposits are not limited to carbon and / or metals. Rather, any substance can be deposited on the surface of object 125, for example, semiconductors, insulators, or other compounds. Furthermore, it is also intended that the precursor, when interacting with the particle beam, can be used to remove material from object 125.

[0091] The gas supply device 1000 is equipped with a supply line 1002. The supply line 1002 has a needle-shaped cannula 1003 extending towards the object 125, which can be positioned close to the surface of the object 125, for example, at a distance of 10 µm to 1 mm from the surface of the object 125. The cannula 1003 has a supply opening with a diameter, for example, in the range of 10 µm to 1000 µm, and particularly in the range of 100 µm to 600 µm. The supply line 1002 has a valve 1004 to regulate the flow of gaseous precursor into the supply line 1002. In other words, when valve 1004 is opened, gaseous precursor is introduced from the precursor reservoir 1001 into the supply line 1002 and directed via the cannula 1003 to the surface of the object 125. When valve 1004 is closed, the flow of gaseous precursor to the surface of the object 125 is stopped.

[0092] The gas supply unit 1000 is further equipped with an adjustment unit 1005, which allows adjustment of the position of the cannula 1003 in all three spatial directions – namely an x-direction, a y-direction, and a z-direction – as well as adjustment of the orientation of the cannula 1003 by rotation and / or tilting. The gas supply unit 1000, and thus also the adjustment unit 1005, are connected to the control unit 123 of the SEM 100.

[0093] In further embodiments, the precursor reservoir 1001 is not arranged directly on the gas supply device 1000. Rather, in these further embodiments, the precursor reservoir 1001 is arranged, for example, on a wall of a room in which the SEM 100 is located.

[0094] The gas supply device 1000 includes a temperature measuring unit 1006. For example, an infrared measuring device or a semiconductor temperature sensor is used as the temperature measuring unit 1006. However, the invention is not limited to the use of such temperature measuring units. Rather, any suitable temperature measuring unit that is appropriate for the invention can be used as the temperature measuring unit. In particular, it can be provided that the temperature measuring unit 1006 is not arranged on the gas supply device 1000 itself, but is, for example, arranged at a distance from the gas supply device 1000.

[0095] The gas supply device 1000 further comprises a temperature control unit 1007. The temperature control unit 1007 is, for example, a heating device, in particular a commercially available infrared heating device. Alternatively, the temperature control unit 1007 is configured as a heating and / or cooling device, which, for example, comprises a heating wire and / or a Peltier element. However, the invention is not limited to the use of such a temperature control unit 1007. Rather, any suitable temperature control unit can be used for the invention.

[0096] Fig. Figure 3 shows a schematic representation of the particle beam device 2004 in the form of a combination device 200. The combination device 200 has two particle beam columns. One of these columns is equipped with the SEM 100, as described in the Fig. Figure 2 is already shown, but without sample chamber 120. Instead, the SEM 100 is arranged on a sample chamber 201. The sample chamber 201 is under vacuum. A pump (not shown) is arranged on the sample chamber 201 to generate the vacuum. In the Fig. In the embodiment shown in section 3, the sample chamber 201 is operated in a first pressure range or in a second pressure range. The first pressure range includes only pressures less than or equal to 10 -3 hPa, and the second pressure range only includes pressures greater than 10 -3 hPa. To ensure these pressure ranges, sample chamber 201 is vacuum-sealed.

[0097] The chamber detector 119 is arranged in the sample chamber 201. It is designed, for example, as an Everhart-Thornley detector or an ion detector and has a metal-coated detection surface that shields light. The third detector 121 is also arranged in the sample chamber 201.

[0098] The SEM 100 serves to generate a first particle beam, namely the primary electron beam described above, and features the optical axis mentioned above, which is located in the Fig. 3 is designated with the reference numeral 709 and is hereinafter also referred to as the first beam axis. Secondly, the combination device 200 is equipped with an ion beam device 300, which is also arranged on the sample chamber 201. The ion beam device 300 also has an optical axis, which is located in the Fig. 3 is designated with the reference numeral 710 and is subsequently also referred to as the second beam axis.

[0099] The SEM 100 is arranged vertically with respect to sample chamber 201. In contrast, the ion beam device 300 is arranged at an angle of approximately 0° to 90° to the SEM 100. In the Fig. Figure 3, for example, shows an arrangement of approximately 50°. The ion beam device 300 has a second beam generator in the form of an ion beam generator 301. Ions are generated by the ion beam generator 301, forming a second particle beam in the form of an ion beam. The ions are accelerated by means of an extraction electrode 302, which is at a predetermined potential. The second particle beam then passes through an ion optic of the ion beam device 300, the ion optic comprising a condenser lens 303 and a second objective lens 304. The second objective lens 304 ultimately generates an ion probe, which is focused onto the object 125 arranged on a specimen holder 114. The specimen holder 114 is arranged on a sample stage 122. The sample stage 122 is, for example, configured as the specimen stage 2001 of the material processing device 2000.

[0100] Above the second objective lens 304 (i.e., in the direction of the ion beam generator 301), an adjustable or selectable aperture 306, a first electrode arrangement 307, and a second electrode arrangement 308 are arranged, wherein the first electrode arrangement 307 and the second electrode arrangement 308 are designed as scanning electrodes. The second particle beam is scanned across the surface of the object 125 by means of the first electrode arrangement 307 and the second electrode arrangement 308, with the first electrode arrangement 307 acting in a first direction and the second electrode arrangement 308 acting in a second direction opposite to the first. Thus, scanning is performed, for example, in an x-direction. Scanning in a perpendicular y-direction is achieved by further electrodes (not shown) rotated by 90° on the first electrode arrangement 307 and on the second electrode arrangement 308.

[0101] As explained above, the object holder 114 is arranged on the sample table 122. Also in the Fig. In the embodiment shown in Figure 3, the sample table 122 has movement units such that the object holder 114 is movable in three mutually perpendicular directions, namely in an x-direction (first table axis), in a y-direction (second table axis), and in a z-direction (third table axis). Furthermore, the sample table 122 has movement units such that the object holder 114 can be rotated about two mutually perpendicular rotation axes (table rotation axes).

[0102] The one in Fig. The distances shown between the individual units of the combination device 200 are exaggerated in order to better illustrate the individual units of the combination device 200.

[0103] A radiation detector 500 is arranged at the sample chamber 201, with which interaction radiation, for example X-rays and / or cathodoluminescence light, is detected. The radiation detector 500 is connected to a control unit 123, which has a monitor 124. The control unit 123 is, for example, configured as the control device 2005 of the material processing device 2000.

[0104] The control unit 123 processes detection signals from the first detector 116, the second detector 117 (in Fig. 3 not shown), the chamber detector 119, the third detector 121 and / or the radiation detector 500 are generated and displays these in the form of images or spectra on the monitor 124.

[0105] The control unit 123 further comprises a database 126 in which data is stored and from which data is read. In addition, the control unit 123 comprises a processor 127, which is configured, for example, as the processor 2005A and / or into which a computer program product with program code is loaded. When executed, this program code controls the material processing device 2000 and / or the combination device 200 in such a way that the method according to the invention is carried out. This will be discussed in more detail below.

[0106] The combination device 200 has a gas supply unit 1000, which serves to supply a gaseous precursor to a specific position on the surface of the object 125. The gas supply unit 1000 has a gas reservoir in the form of a precursor reservoir 1001. The precursor is contained in the precursor reservoir 1001, for example, as a solid, gaseous, or liquid substance. By heating and / or cooling the precursor, the equilibrium between the solid, liquid, and gaseous phases is adjusted such that the required vapor pressure is available.

[0107] For example, phenanthrene is used as a precursor. In this case, essentially a layer of carbon or a carbon-containing layer is deposited on the surface of object 125. Alternatively, a metal-containing precursor can be used to deposit a metal or a metal-containing layer on the surface of object 125. However, the deposits are not limited to carbon and / or metals. Rather, any substance can be deposited on the surface of object 125, such as semiconductors, insulators, or other compounds. Furthermore, it is also intended that the precursor, when interacting with one of the two particle beams, can be used to remove material from object 125.

[0108] The gas supply device 1000 is equipped with a supply line 1002. The supply line 1002 has a needle-shaped cannula 1003 extending towards the object 125, which can be positioned close to the surface of the object 125, for example, at a distance of 10 µm to 1 mm from the surface of the object 125. The cannula 1003 has a supply opening with a diameter, for example, in the range of 10 µm to 1000 µm, and particularly in the range of 100 µm to 600 µm. The supply line 1002 has a valve 1004 to regulate the flow of gaseous precursor into the supply line 1002. In other words, when valve 1004 is opened, gaseous precursor is introduced from the precursor reservoir 1001 into the supply line 1002 and directed via the cannula 1003 to the surface of object 125. When valve 1004 is closed, the flow of gaseous precursor to the surface of object 125 is stopped.

[0109] The gas supply unit 1000 is further equipped with an adjustment unit 1005, which allows adjustment of the position of the cannula 1003 in all three spatial directions – namely, an x-direction, a y-direction, and a z-direction – as well as adjustment of the orientation of the cannula 1003 by rotation and / or tilting. The gas supply unit 1000, and thus also the adjustment unit 1005, are connected to the control unit 123 of the combination device 200.

[0110] In further embodiments, the precursor reservoir 1001 is not arranged directly on the gas supply device 1000. Rather, in these further embodiments, the precursor reservoir 1001 is arranged, for example, on a wall of a room in which the combination device 200 is located.

[0111] The gas supply device 1000 includes a temperature measuring unit 1006. For example, an infrared measuring device or a semiconductor temperature sensor is used as the temperature measuring unit 1006. However, the invention is not limited to the use of such temperature measuring units. Rather, any suitable temperature measuring unit that is appropriate for the invention can be used as the temperature measuring unit. In particular, it can be provided that the temperature measuring unit 1006 is not arranged on the gas supply device 1000 itself, but is, for example, arranged at a distance from the gas supply device 1000.

[0112] The gas supply device 1000 further comprises a temperature control unit 1007. The temperature control unit 1007 is, for example, a heating device, in particular a commercially available infrared heating device. Alternatively, the temperature control unit 1007 is designed as a heating and / or cooling device, which, for example, comprises a heating wire and / or a Peltier element.

[0113] However, the invention is not limited to the use of such a temperature control unit 1007. Rather, any suitable temperature control unit can be used for the invention.

[0114] Fig. Figure 4 shows a schematic representation of the particle beam device 2004 in the form of another particle beam device. This embodiment of the particle beam device is designated with reference numeral 400 and includes a mirror corrector for correcting, for example, chromatic and / or spherical aberration. The particle beam device 400 comprises a particle beam column 401, which is designed as an electron beam column and essentially corresponds to an electron beam column of a corrected SEM. However, the particle beam device 400 is not limited to an SEM with a mirror corrector. Rather, the particle beam device 400 can include any type of corrector unit.

[0115] The particle beam column 401 comprises a particle beam generator in the form of an electron source 402 (cathode), an extraction electrode 403, and an anode 404. For example, the electron source 402 is configured as a thermal field emitter. Electrons emitted from the electron source 402 are accelerated towards the anode 404 due to a potential difference between the electron source 402 and the anode 404. Thus, a particle beam in the form of an electron beam is generated along a first optical axis OA1.

[0116] The particle beam is guided along a beam path corresponding to the first optical axis OA1 after it exits the electron source 402. A first electrostatic lens 405, a second electrostatic lens 406, and a third electrostatic lens 407 are used to guide the particle beam.

[0117] Furthermore, the particle beam is aligned along the beam path using a beam guidance device. The beam guidance device of this embodiment comprises a source alignment unit with two magnetic deflection units 408 arranged along the first optical axis OA1. In addition, the particle beam device 400 comprises electrostatic beam deflection units. A first electrostatic beam deflection unit 409, which in another embodiment is also configured as a quadrupole, is arranged between the second electrostatic lens 406 and the third electrostatic lens 407. The first electrostatic beam deflection unit 409 is also arranged downstream of the magnetic deflection units 408. A first multipole unit 409A, in the form of a first magnetic deflection unit, is arranged on one side of the first electrostatic beam deflection unit 409.Furthermore, a second multipole unit 409B, in the form of a second magnetic deflection unit, is arranged on the other side of the first electrostatic beam deflection unit 409. The first electrostatic beam deflection unit 409, the first multipole unit 409A, and the second multipole unit 409B are adjusted to align the particle beam with respect to the axis of the third electrostatic lens 407 and the inlet window of a beam deflection device 410. The first electrostatic beam deflection unit 409, the first multipole unit 409A, and the second multipole unit 409B can act together like a Wien filter. Another magnetic deflection element 432 is arranged at the inlet of the beam deflection device 410.

[0118] The beam deflection device 410 is used as a particle beam deflector, which deflects the particle beam in a specific manner. The beam deflection device 410 comprises several magnetic sectors, namely a first magnetic sector 411A, a second magnetic sector 411B, a third magnetic sector 411C, a fourth magnetic sector 411D, a fifth magnetic sector 411E, a sixth magnetic sector 411F, and a seventh magnetic sector 411G. The particle beam enters the beam deflection device 410 along the first optical axis OA1 and is deflected by the beam deflection device 410 in the direction of a second optical axis OA2. The beam deflection is achieved by the first magnetic sector 411A, the second magnetic sector 411B, and the third magnetic sector 411C by an angle of 30° to 120°.The second optical axis OA2 is aligned at the same angle to the first optical axis OA1. The beam deflection device 410 also deflects the particle beam, which is guided along the second optical axis OA2, in the direction of a third optical axis OA3. The beam deflection is provided by the third magnetic sector 411C, the fourth magnetic sector 411D, and the fifth magnetic sector 411E. In the embodiment shown in . Fig. 4. The deflection to the second optical axis OA2 and to the third optical axis OA3 is provided by deflecting the particle beam at an angle of 90°. Thus, the third optical axis OA3 is coaxial with the first optical axis OA1. However, it should be noted that the particle beam device 400 according to the invention described herein is not limited to deflection angles of 90°. Rather, any suitable deflection angle can be selected by the beam deflection device 410, for example, 70° or 110°, so that the first optical axis OA1 is not coaxial with the third optical axis OA3. For further details of the beam deflection device 410, reference is made to WO 02 / 067286 A2.

[0119] After the particle beam is deflected by the first magnetic sector 411A, the second magnetic sector 411B, and the third magnetic sector 411C, the particle beam is guided along the second optical axis OA2. The particle beam is guided to an electrostatic mirror 414 and, on its way to the electrostatic mirror 414, passes by a fourth electrostatic lens 415, a third multipole unit 416A in the form of a magnetic deflection unit, a second electrostatic beam deflection unit 416, a third electrostatic beam deflection unit 417, and a fourth multipole unit 416B in the form of a magnetic deflection unit. The electrostatic mirror 414 comprises a first mirror electrode 413A, a second mirror electrode 413B, and a third mirror electrode 413C.Electrons from the particle beam, which are reflected back at the electrostatic mirror 414, travel again along the second optical axis OA2 and re-enter the beam deflection device 410. They are then deflected by the third magnetic sector 411C, the fourth magnetic sector 411D and the fifth magnetic sector 411E to the third optical axis OA3.

[0120] The electrons of the particle beam exit the beam deflection device 410 and are guided along the third optical axis OA3 to an object 425 which is to be examined and is arranged in an object holder 114.

[0121] On its way to object 425, the particle beam is guided to a fifth electrostatic lens 418, a beam guide tube 420, a fifth multipole unit 418A, a sixth multipole unit 418B, and an objective lens 421. The fifth electrostatic lens 418 is an electrostatic immersion lens. The particle beam is decelerated or accelerated by the fifth electrostatic lens 418 to an electrical potential of the beam guide tube 420.

[0122] The particle beam is focused by the objective lens 421 into a focal plane in which the object 425 is located. The object holder 114 is arranged on a movable sample stage 424. For example, the sample stage 424 is configured as the object stage 2001 of the material processing device 2000. The movable sample stage 424 is arranged in a sample chamber 426 of the particle beam device 400. The sample stage 424 has movement units such that the object holder 114 is movable in three mutually perpendicular directions, namely in an x-direction (first table axis), in a y-direction (second table axis), and in a z-direction (third table axis). In addition, the sample stage 424 has movement units such that the object holder 114 can be rotated about two mutually perpendicular rotation axes (table rotation axes).

[0123] The sample chamber 426 is under vacuum. A pump (not shown) is arranged on the sample chamber 426 to generate the vacuum. During the Fig. In the embodiment shown in Figure 4, the sample chamber 426 is operated in a first pressure range or in a second pressure range. The first pressure range includes only pressures less than or equal to 10 -3 hPa, and the second pressure range only includes pressures greater than 10 -3 hPa. To ensure these pressure ranges, sample chamber 426 is vacuum-sealed.

[0124] The objective lens 421 can be configured as a combination of a magnetic lens 422 and a sixth electrostatic lens 423. The end of the beam guide tube 420 can also be an electrode of an electrostatic lens. Particles from the particle beam device are decelerated to a potential of the object 425 after exiting the beam guide tube 420. The objective lens 421 is not limited to a combination of the magnetic lens 422 and the sixth electrostatic lens 423. Rather, the objective lens 421 can assume any suitable embodiment. For example, the objective lens 421 can also be configured as a purely magnetic lens or as a purely electrostatic lens.

[0125] The particle beam, focused onto object 425, interacts with it, generating interaction particles. Specifically, secondary electrons are emitted from object 425, or backscattered electrons are scattered by object 425. The secondary electrons or backscattered electrons are then accelerated and guided into the beam guide tube 420 along the third optical axis OA3. The paths of the secondary electrons and backscattered electrons, in particular, run in the opposite direction to the particle beam.

[0126] The particle beam device 400 comprises a first analysis detector 419, which is arranged along the beam path between the beam deflection device 410 and the objective lens 421. Secondary electrons traveling in directions oriented at a large angle to the third optical axis OA3 are detected by the first analysis detector 419. Backscattered electrons and secondary electrons that have a small axial distance to the third optical axis OA3 at the location of the first analysis detector 419—i.e., backscattered electrons and secondary electrons that are a small distance from the third optical axis OA3 at the location of the first analysis detector 419—enter the beam deflection device 410 and are deflected by the fifth magnetic sector 411E, the sixth magnetic sector 411F, and the seventh magnetic sector 411G along a detection beam path 427 to a second analysis detector 428.The deflection angle is, for example, 90° or 110°.

[0127] The first analysis detector 419 generates detection signals, largely produced by emitted secondary electrons. These signals are fed to a control unit 123 and used to obtain information about the properties of the interaction area between the focused particle beam and the object 425. Specifically, the focused particle beam is rasterized across the object 425 using a raster device 429. The detection signals generated by the first analysis detector 419 then enable the creation of an image of the rasterized area of ​​the object 425, which can be displayed on a display unit. The display unit is, for example, a monitor 124 located at the control unit 123. The control unit 123 is configured, for example, as the control device 2005 of the material processing device 2000.

[0128] The second analysis detector 428 is also connected to the control unit 123. Detection signals from the second analysis detector 428 are sent to the control unit 123 and used to generate an image of the rasterized area of ​​the object 425 and display it on a display unit. The display unit is, for example, the monitor 124, which is located on the control unit 123.

[0129] A radiation detector 500 is arranged at the sample chamber 426, which detects interaction radiation, for example X-rays and / or cathodoluminescence. The radiation detector 500 is connected to the control unit 123, which includes the monitor 124. The control unit 123 processes detection signals from the radiation detector 500 and displays them as images and / or spectra on the monitor 124.

[0130] The control unit 123 also includes a database 126 in which data is stored and from which data is read. Furthermore, the control unit 123 includes a processor 127, which is configured, for example, as the processor 2005A and / or into which a computer program product with program code is loaded. When executed, this program code controls the material processing device 2000 and / or the particle beam device 400 in such a way that the method according to the invention is carried out. This will be discussed in more detail below.

[0131] The particle beam device 400 has a gas supply unit 1000, which serves to supply a gaseous precursor to a specific position on the surface of the object 425. The gas supply unit 1000 has a gas reservoir in the form of a precursor reservoir 1001. The precursor is contained in the precursor reservoir 1001, for example, as a solid, gaseous, or liquid substance. By heating and / or cooling the precursor, the equilibrium between the solid, liquid, and gaseous phases is adjusted such that the required vapor pressure is available.

[0132] For example, phenanthrene is used as a precursor. In this case, essentially a layer of carbon or a carbon-containing layer is deposited on the surface of object 425. Alternatively, a metal-containing precursor can be used to deposit a metal or a metal-containing layer on the surface of object 425. However, the deposits are not limited to carbon and / or metals. Rather, any substance can be deposited on the surface of object 425, such as semiconductors, insulators, or other compounds. Furthermore, it is also intended to use the precursor, in interaction with a particle beam, to remove material from object 425.

[0133] The gas supply device 1000 is equipped with a supply line 1002. The supply line 1002 has a needle-shaped cannula 1003 extending towards the object 425, which can be positioned close to the surface of the object 425, for example, at a distance of 10 µm to 1 mm from the surface of the object 425. The cannula 1003 has a supply opening with a diameter, for example, in the range of 10 µm to 1000 µm, and particularly in the range of 100 µm to 600 µm. The supply line 1002 has a valve 1004 to regulate the flow of gaseous precursor into the supply line 1002. In other words, when valve 1004 is opened, gaseous precursor is introduced from the precursor reservoir 1001 into the supply line 1002 and directed via the cannula 1003 to the surface of object 425. When valve 1004 is closed, the flow of gaseous precursor to the surface of object 425 is stopped.

[0134] The gas supply unit 1000 is further equipped with an adjustment unit 1005, which allows adjustment of the position of the cannula 1003 in all three spatial directions – namely an x-direction, a y-direction, and a z-direction – as well as adjustment of the orientation of the cannula 1003 by rotation and / or tilting. The gas supply unit 1000, and thus also the adjustment unit 1005, are connected to the control unit 123 of the particle beam device 400.

[0135] In further embodiments, the precursor reservoir 1001 is not arranged directly on the gas supply device 1000. Rather, in these further embodiments, the precursor reservoir 1001 is arranged, for example, on a wall of a room in which the particle beam device 400 is located.

[0136] The gas supply device 1000 includes a temperature measuring unit 1006. For example, an infrared measuring device or a semiconductor temperature sensor is used as the temperature measuring unit 1006. However, the invention is not limited to the use of such temperature measuring units. Rather, any suitable temperature measuring unit that is appropriate for the invention can be used as the temperature measuring unit. In particular, it can be provided that the temperature measuring unit 1006 is not arranged on the gas supply device 1000 itself, but is, for example, arranged at a distance from the gas supply device 1000.

[0137] The gas supply device 1000 further comprises a temperature control unit 1007. The temperature control unit 1007 is, for example, a heating device, in particular a commercially available infrared heating device. Alternatively, the temperature control unit 1007 is configured as a heating and / or cooling device, which, for example, comprises a heating wire and / or a Peltier element. However, the invention is not limited to the use of such a temperature control unit 1007. Rather, any suitable temperature control unit can be used for the invention.

[0138] The following section will discuss sample stage 122 of the SEM 100, sample stage 122 of the combination device 200, and sample stage 424 of the particle beam device 400. Sample stage 122, 424 is designed as a sample stage with movement units, which is located in the Fig. 5 and Fig. Figure 6 is shown schematically. It should be noted that the invention is not limited to the sample table 122, 424 described herein. Rather, the invention can include any movable sample table suitable for the invention.

[0139] The sample table 122, 424 houses the object holder 114 with the object 125, 425. The sample table 122, 424 has movement units that ensure the movement of the object holder 114 such that an area of ​​interest on the object 125, 425 can be examined and / or processed using a particle beam. The movement units are located in the Fig. 5 and Fig. 6 are shown schematically and are explained below.

[0140] The sample stage 122, 424 has a first motion unit 600 on a housing 601 of the sample chamber 120, 201, 426, in which the sample stage 122, 424 is arranged. The first motion unit 600 enables movement of the object holder 114 along the z-axis (third table axis). Furthermore, a second motion unit 602 is provided. The second motion unit 602 enables rotation of the object holder 114 about a first table rotation axis 603, which is also referred to as the tilt axis. This second motion unit 602 serves to tilt the object 125, 425 about the first table rotation axis 603.

[0141] A third motion unit 604 is arranged on the second motion unit 602. This third unit serves as a guide for a slide and ensures that the object holder 114 is movable in the x-direction (first table axis). The aforementioned slide is itself a further motion unit, namely a fourth motion unit 605. The fourth motion unit 605 is designed such that the object holder 114 is movable in the y-direction (second table axis). For this purpose, the fourth motion unit 605 has a guide in which another slide is guided. A bracket 609, containing the object holder 114 and the objects 125 and 425, is arranged on this guide.

[0142] The bracket 609 is in turn equipped with a fifth motion unit 606, which makes it possible to rotate the bracket 609 about a second table rotation axis 607. The second table rotation axis 607 is oriented perpendicular to the first table rotation axis 603.

[0143] Due to the arrangement described above, the sample table 122, 424 of the embodiment discussed here has the following kinematic chain: first motion unit 600 (movement along the z-axis) - second motion unit 602 (rotation about the first table rotation axis 603) - third motion unit 604 (movement along the x-axis) - fourth motion unit 605 (movement along the y-axis) - fifth motion unit 606 (rotation about the second table rotation axis 607).

[0144] In a further embodiment (not shown), it is provided that further motion units are arranged on the sample table 122, 424, so that movements along further translational axes and / or around further rotational axes are made possible.

[0145] As from the Fig. As can be seen in Figure 6, each of the aforementioned motion units is connected to a stepper motor. The first motion unit 600 is connected to a first stepper motor M1 and is driven by a driving force provided by the first stepper motor M1. The second motion unit 602 is connected to a second stepper motor M2, which drives the second motion unit 602. The third motion unit 604 is in turn connected to a third stepper motor M3. The third stepper motor M3 provides a driving force to drive the third motion unit 604. The fourth motion unit 605 is connected to a fourth stepper motor M4, with the fourth stepper motor M4 driving the fourth motion unit 605. Furthermore, the fifth motion unit 606 is connected to a fifth stepper motor M5. The fifth stepper motor M5 provides a driving force that drives the fifth motion unit 606.The aforementioned stepper motors M1 to M5 are controlled by a control unit 608 (see . Fig. 6).

[0146] As mentioned above, the SEM 100, the combination device 200, and / or the particle beam device 400 can themselves be configured as the material processing unit 2000. In this case, the SEM 100, the combination device 200, and / or the particle beam device 400 have all the features described above or below with regard to the material processing unit 2000.

[0147] Embodiments of the method according to the invention are explained in more detail below with regard to the material processing device 2000 in the form of the combination device 200. The implementation of the method according to the invention with regard to the SEM 100 and / or the particle beam device 400 is carried out analogously.

[0148] Fig. Figure 7 shows a schematic representation of the process flow of an embodiment of the method according to the invention. In a process step S1, a region of interest of the object 125, which is located on or in the object 125, is determined using the determination device 2002 of the material processing device 2000. In other words, the position of the region of interest in or on the object 125 is determined. The region of interest is, for example, a precipitate in the material of the object 125, a pore in the material of the object 125, a foreign phase in the material of the object 125, an interface in the material of the object 125, or a defect in the material of the object 125. For example, the region of interest is determined using the determination device 2002 with predefined data about the object 125 or with data from a model of the object 125.This embodiment of the method according to the invention is used, for example, when the structural composition of object 125 is known or approximately known. Then, for example, it is possible to determine the position of the area of ​​interest in or on object 125 precisely or approximately. For example, the determined or presumed position of the area of ​​interest is entered into the determination device 2002 and / or read from an external database. In a further embodiment of the method according to the invention, it is additionally or alternatively provided that the area of ​​interest is determined using the determination device 2002 by means of a non-destructive examination. For example, the area of ​​interest is determined using the X-ray device, the ultrasound device, and / or the lock-in thermography device.

[0149] Once the area of ​​interest has been determined, it is centered, for example, with respect to the light beam. For centering, a method known from US 8,693,008 B2, the contents of which are incorporated in full into this patent application by reference, can be used. Additionally, it is provided, for example, to focus the light beam onto the surface of object 125. For this purpose, the position of the area of ​​interest, in particular its height, can be determined using the method known from US 8,693,008 B2. The height is then used to adjust the focus of the light beam on the surface of object 125.

[0150] In process step S2, the light beam is guided across a surface of object 125 along a first line L1 in a first direction RI1. This is in Fig. Figure 8 is shown schematically. The first line L1 runs from a first point P1 on the surface of object 125 towards a second point P2 on the surface of object 125. For example, the light beam is guided across the surface of object 125 by the guide device 2003A. Additionally or alternatively, it is provided that object 125 is moved relative to the light beam by the sample stage 122. In other words, a relative movement of the light beam to object 125 is performed to guide the light beam. This relative movement is provided by a movement of the light beam and / or by a movement of the sample stage 122. As the light beam is guided across the surface of object 125, material from the object 125 is removed. Thus, an interaction of the light beam with the material of object 125 occurs.Due to the interaction of the light beam with the material of object 125, the material on object 125 is removed, so that the sample or at least a part of the sample is produced.

[0151] In process step S3, the direction of movement of the light beam is changed. More precisely, the first direction RI1 is changed to a second direction RI2 (see figure). Fig. 8) For example, an axis of rotation intersects the first line L1. In particular, it is provided that the axis of rotation passes through the first point P1. In the Fig. Figure 8 illustrates that the axis of rotation passes through the first point P1 and is perpendicular to the plane of the sheet. The first direction RI1 is changed to the second direction RI2 by rotating the first line L1 around the axis of rotation on the surface of object 125.

[0152] In one embodiment of the method according to the invention, it is additionally or alternatively provided that the first direction RI1 is changed to the second direction RI2 by rotating the first line L1 in a plane. For example, the first plane is the plane of the sheet. Fig. 8. However, the invention is not limited to this. Rather, any plane suitable for the invention can be used as the plane, including a plane other than the plane of the sheet. Fig. 8 corresponds to.

[0153] As from the Fig. As can be seen in Figure 8, the first direction RI1 and the second direction RI2 are different from each other. After changing direction to the second direction RI2, the light beam is guided across the surface of object 125 along a second line L2 in the second direction RI2.

[0154] The second line L2 extends from a third point P3, which corresponds to the first point P1, on the surface of object 125 towards a fourth point P4 on the surface of object 125. For example, the light beam is guided along the second line L2 by the guiding device 2003A. Additionally or alternatively, it is possible to move object 125 relative to the light beam using the sample stage 122. In other words, the light beam is moved relative to object 125 to guide the light beam. This relative movement is achieved by moving the light beam and / or by moving the sample stage 122.

[0155] When the light beam is guided along the second line L2 across the surface of object 125, material from object 125 is again removed. Thus, when the light beam is guided along the second line L2, it interacts with the material of object 125. Due to this interaction, material is removed from object 125, resulting in the production of the sample, or at least a part of the sample.

[0156] In process step S5, the direction of movement of the light beam is changed. More precisely, the second direction RI2 is changed to a third direction RI3 (see figure). Fig. 8) For example, the axis of rotation intersects the second line L2. In particular, it is intended that the axis of rotation passes through the third point P3. In the Fig. Figure 8 illustrates that the axis of rotation passes through the third point P3 and is perpendicular to the plane of the sheet. The second direction RI2 is changed to the third direction RI3 by rotating the second line L2 around the axis of rotation on the surface of object 125.

[0157] In one embodiment of the method according to the invention, it is additionally or alternatively provided that the second direction RI2 is changed to the third direction RI3 by rotating the second line L2 in the plane already mentioned above. For example, this plane is the sheet plane of the Fig. 8. However, the invention is not limited to this. Rather, any plane suitable for the invention can be used as the plane, including a plane other than the plane of the sheet. Fig. 8 corresponds to.

[0158] As from the Fig. As can be seen in Figure 8, the second direction RI2 and the third direction RI3 are different from each other. After changing direction to the third direction RI3, the light beam is guided across the surface of object 125 along a third line L3 in the third direction RI3.

[0159] The third line L3 extends from a fifth point P5, which corresponds to the first point P1 and the third point P3, on the surface of object 125 towards a sixth point P6 on the surface of object 125. For example, the light beam is guided along the third line L3 by the guiding device 2003A. Additionally or alternatively, it is possible to move object 125 relative to the light beam using the sample stage 122. In other words, a relative movement of the light beam to object 125 is performed to guide the light beam. This relative movement is achieved by moving the light beam and / or by moving the sample stage 122.

[0160] When the light beam is guided along the third line L3 across the surface of object 125, material from object 125 is removed. Thus, when the light beam is guided along the third line L3, it interacts with the material of object 125. Due to this interaction, material is removed from object 125, resulting in the production of the sample, or at least a portion thereof.

[0161] In the method according to the invention, the light beam is provided in pulsed form by the light beam device 2003. For example, the light beam is provided with pulse durations in the picosecond or femtosecond range. The light beam device 2003 has a first operating state and a second operating state. In the first operating state, the pulsed light beam is directed onto the surface of the object 125 in such a way that the light beam removes material from the object 125 to produce the sample or at least a part of the sample. In the second operating state, the light beam is not directed onto the object 125. In other words, the second operating state is the state of the light beam device 2003 that lies between the provision of the light beam at a first duration and the provision of the light beam at a second duration.In other words, the light beam is initially provided during the first time period. Then there is a time period during which the light beam is not provided. Following this, the light beam is provided during the second time period. In the first operating state, the sample, or at least a part of the sample, is produced by the removal of material from object 125 due to the interaction of the light beam with object 125.

[0162] The method according to the invention is not limited to guiding the light beam along the first line L1, along the second line L2, and along the third line L3. Rather, the light beam can be guided along numerous lines resulting from changes in the direction of one line to another. In this respect, it is envisaged, for example, to repeat process steps S3 and S4 and / or process steps S5 and S6 as often as desired.

[0163] In a further embodiment of the method according to the invention, it is additionally or alternatively provided that a grid area is defined on the object 125, wherein the grid area comprises a plurality of grid lines. Essentially, the grid lines are lines, for example, the first line L1, the second line L2, or the third line L3. The light beam is guided along the plurality of grid lines. If, for example, the first direction is changed to the second direction, then, in this embodiment of the method according to the invention, the aforementioned grid area rotates about the axis of rotation.

[0164] Fig. Figure 9 shows an embodiment of a grid area 2006 on the object 125. The grid area 2006 has a plurality of grid lines. The light beam is guided along the lines. If, for example, the first direction is changed to the second direction, then in this embodiment of the method according to the invention, the aforementioned grid area 2006 rotates about the axis of rotation. As shown in the Fig. As shown in Figure 9, the grid area 2006 has a first area 2007A, a second area 2007B, a third area 2007C, a fourth area 2007D, a fifth area 2007E, a sixth area 2007F, a seventh area 2007G, an eighth area 2007H, a ninth area 2007I, and a tenth area 2007J. The lines are broken in the aforementioned areas 2007A to 2007J. In one embodiment of the method according to the invention, a sample is produced in each of the aforementioned areas 2007A to 2007J. As already explained above, the light beam device 2003 has a first operating state and a second operating state. In the first operating state, the pulsed light beam is directed onto the surface of the object 125 in such a way that the light beam removes material from the object 125 to produce the sample or at least a part of the sample.In the second operating state, the light beam is not directed onto object 125. The aforementioned areas 2007A to 2007J are areas to which the light beam is not directed in the second operating state.

[0165] As explained above, for example, a grid area 2006 is defined on object 125. Grid area 2006 has a large number of grid rows. Fig. 9A and Fig. 9B is based on the Fig. 9. The same reference symbols denote the same units. Fig. 9A and Fig. Figure 9B also shows an embodiment of the grid area 2006 on object 125. The grid area 2006 has a plurality of grid lines in the form of lines 1 to N, where N is an integer. The light beam is guided along the plurality of grid lines. For example, the grid lines of the plurality of grid lines are arranged parallel to each other. In particular, it is provided that the light beam is initially guided along two or more, preferably along all, grid lines of the grid area 2006. For example, the light beam is guided from a first grid line end along a grid line to a second grid line end of the grid line (see Figure 9B). Fig. 9A). In a further embodiment of the method according to the invention, the light beam is first guided from a first grid line end along a grid line to a second grid line end of the grid line, and subsequently along a further grid line from the second grid line end of the further grid line to the first grid line end of the further grid line. However, the invention is not limited to such a guiding of the light beam across the grid lines. Rather, any type of guiding across the grid lines suitable for the invention can be used. When the first direction is changed to the second direction, the grid area 2006 rotates about the axis of rotation in the aforementioned embodiments of the method according to the invention, so that all grid lines are also rotated. The illustrations (2) of the Fig. 9A and Fig. Figure 9B shows the raster area 2006 after a rotation of the raster area 2006 of the representations (1) of the Fig. 9A and Fig. 9B. Furthermore, the illustrations (3) of the Fig. 9A and Fig. 9B the raster area 2006 after a rotation of the raster area 2006 of the representations (2) of the Fig. 9A and Fig. 9B. The rotation of the grid area 2006 and the subsequent guiding of the light beam over the grid lines of the grid area 2006 are repeated until the sample is produced or the multiple samples on object 125 are produced.

[0166] The method according to the invention makes it possible to produce a single sample or a plurality of samples. In particular, it is provided that the plurality of samples comprises at least 5 samples, at least 10 samples, or at least 15 samples of object 125. However, the invention is not limited to the aforementioned number of samples. Rather, the plurality of samples can comprise any number of samples suitable for the invention. For example, with the method described in Fig. In the grid area shown in Figure 9, a large number of samples were produced in 2006, comprising 10 samples, each of which is arranged in one of the aforementioned areas 2007A to 2007J.

[0167] For example, it is provided that in the first operating state of the light beam device 2003, the individual samples of the plurality of samples are produced one after the other. In other words, first one of the samples of the plurality of samples is produced, and then another of the samples of the plurality of samples is produced. The above is repeated until all samples of the plurality of samples have been produced. Alternatively, it is provided that in a single step of the method according to the invention, several samples of the plurality of samples (or at least a portion of several samples of the plurality of samples) are produced. Alternatively once again, it is provided that in a single step of the method according to the invention, all samples of the plurality of samples (or at least a portion of all samples of the plurality of samples) are produced.

[0168] Fig. Figure 10 shows a schematic representation of a plurality of samples, namely a total of 9 samples: a first sample 2008A, a second sample 2008B, a third sample 2008C, a fourth sample 2008D, a fifth sample 2008E, a sixth sample 2008F, a seventh sample 2008G, an eighth sample 2008H, and a ninth sample 2008I. The aforementioned samples 2008A to 2008I were produced using the method according to the invention. Each of the samples 2008A to 2008I is approximately cylindrical. For example, the diameter of each of the produced cylindrical samples 2008A to 2008I ranges from less than 1 µm to several hundred µm. The height of such a sample 2008A to 2008l can range from several tens of micrometers to approximately 1 mm.

[0169] As from the Fig. As can be seen in Figure 10, it is provided, for example, that each of the samples 2008A to 2008l has a surface with a center point. Each of the surfaces is, for example, aligned parallel or substantially parallel to the surface of object 125.Thus, the first sample 2008A has a first surface 2009A and a first center point 2010A, the second sample 2008B has a second surface 2009B and a second center point 2010B, the third sample 2008C has a third surface 2009C and a third center point 2010C, the fourth sample 2008D has a fourth surface 2009D and a fourth center point 2010D, the fifth sample 2008E has a fifth surface 2009E and a fifth center point 2010E, the sixth sample 2008F has a sixth surface 2009F and a sixth center point 2010F, the seventh sample 2008G has a seventh surface 2009G and a seventh center point 2010G, and the eighth sample 2008H has an eighth surface 2009H and an eighth center point 2010H as well as the ninth sample 2008l a ninth area 2009I and a ninth center point 2010I.

[0170] In the method according to the invention, the aforementioned samples 2008A to 2008l are produced such that adjacent samples of samples 2008A to 2008l are spaced a certain distance apart. Adjacent samples are defined as samples between which no further sample of the plurality of samples is arranged. In other words, a first sample and a second sample are arranged directly next to each other if no further sample is arranged between the first sample and the second sample. For example, the center of the surface of one of the samples 2008A to 2008l is spaced a certain distance from the center of the surface of an adjacent sample of samples 2008A to 2008l, wherein the space has at least one of the following features: (i) the distance corresponds to a diameter or a multiple thereof of the diameter of the light beam; (ii) the distance is, for example, less than 900 µm, less than 800 µm, less than 700 µm, less than 600 µm, less than 500 µm, less than 400 µm, less than 300 µm, less than 200 µm, less than 100 µm, less than 80 µm, less than 60 µm, less than 50 µm, less than 30 µm, less than 20 µm or less than 10 µm.

[0171] Regarding the possible definitions of the diameter of the light beam, reference is made to the explanations above, which also apply here.

[0172] The aforementioned distance is defined, for example, as follows. A first straight line, perpendicular to the surface of a sample 2008A to 2008l, passes through the center of the surface of the sample, with the sample being adjacent to another sample 2008A to 2008l. Furthermore, a second straight line, perpendicular to the surface of the other sample, passes through the center of the surface of the other sample. The distance between the sample and the other sample is the distance between the first and second lines. For example, the distance is the length of a distance line that intersects both the first and second lines perpendicularly. Alternatively, the distance is, for example, the minimum distance between the first and second lines. The foregoing is in Fig. Figure 10 illustrates this with reference to the first sample 2008A and the fourth sample 2008D. The first sample 2008A has the first center point 2010A, through which a first straight line 2011A passes, oriented perpendicular to the first surface 2009A. Furthermore, the fourth sample 2008D has the fourth center point 2010D, through which a fourth straight line 2011D passes, oriented perpendicular to the fourth surface 2009D. The distance between the first center point 2010A and the fourth center point 2010D is the length of a distance line A, which intersects both the first straight line 2011A and the fourth straight line 2011D perpendicularly. The length of the distance line A corresponds, for example, to a diameter or a multiple of the diameter of the light ray.Additionally or alternatively, the distance may be, for example, less than 900 µm, less than 800 µm, less than 700 µm, less than 600 µm, less than 500 µm, less than 400 µm, less than 300 µm, less than 200 µm, less than 100 µm, less than 80 µm, less than 60 µm, less than 50 µm, less than 30 µm, less than 20 µm or less than 10 µm.

[0173] The distance between two adjacent samples of samples 2008A to 2008l can alternatively be defined as follows. For example, one of the samples of samples 2008A to 2008I (hereinafter referred to as "this sample"), which is adjacent to another sample of samples 2008A to 2008l (hereinafter referred to as "another sample"), has a first edge. Furthermore, the other sample has a second edge. The distance between this sample and the other sample is the distance between the first edge and the second edge. For example, the distance is the length of a line segment extending from a first point on the first edge to a second point on the second edge. In particular, the distance is, for example, the minimum distance between the first edge and the second edge. The foregoing is in Fig. Figure 10 illustrates this again with reference to the first sample 2008A and the fourth sample 2008D. The first sample 2008A has a first edge R1. Furthermore, the fourth sample 2008D has a fourth edge R4. The distance between the first sample 2008A and the fourth sample 2008D is the minimum distance between the first edge R1 and the fourth edge R4. For example, the distance is the length of a distance line A1, which runs from a first point RP1 at the first edge R1 to a fourth point RP4 at the fourth edge R4. The distance is, for example, less than 30 µm, less than 20 µm, or less than 10 µm. Additionally or alternatively, the distance corresponds to the diameter or a multiple of the diameter of the light beam.

[0174] In Fig. Figure 11 shows a further step of another embodiment of the method according to the invention. In a further process step S7, a marking is applied to the surface of each of the samples of the plurality of samples after process step S6. For example, the marking on the surface of each of the samples of the plurality of samples is applied using a light beam, an electron beam and / or an ion beam. Fig. Figure 12 shows an embodiment of a plurality of samples comprising a total of 16 samples. The surfaces of the samples are marked with the numbers 1 to 16. The markings on the surfaces of the samples of the plurality of samples serve to make the individual samples uniquely identifiable.

[0175] In one embodiment of the method according to the invention, it is additionally or alternatively provided that the light beam is guided over the surface of the object 125 in steps of less than 300 nm, less than 200 nm or less than 100 nm.

[0176] It has been shown that the method according to the invention makes it possible to produce a sample, or several cylindrical samples, that are as cylindrical as possible in a short time. In particular, it has been shown that the use of pulsed light beams from the light beam device 2003 makes it possible to produce a sample that is as cylindrical as possible. Furthermore, it has been shown that the method according to the invention readily enables the simultaneous production of several cylindrical samples.

[0177] After the cylindrical sample or samples (for example, samples 2008A to 20081) have been produced, they are separated from the object 125 in one embodiment of the method according to the invention. This is done, in particular, using an ion beam. Subsequently, the cylindrical sample or samples (for example, samples 2008A to 20081) are analyzed. This is explained in more detail below using samples 2008A to 20081 as an example.

[0178] For example, the micromechanical properties of the material of the cylindrical samples 2008A to 2008l are determined. In particular, the deformation of the cylindrical samples 2008A to 2008l is measured by applying pressure to a surface of the cylindrical samples 2008A to 2008l. Such a measurement is carried out, for example, with the combination instrument 200. For this purpose, the combination instrument 200 has a corresponding in-situ measuring device. The measurement results obtained are used in mathematical models to determine the mechanical material properties of the material of the cylindrical samples 2008A to 2008l.

[0179] It is also planned, for example, to examine the cylindrical samples 2008A to 2008l using synchrotron radiation and thereby create a series of projection images of the cylindrical samples 2008A to 2008l from different directions. From this series of projection images, a three-dimensional structure of the interior of the cylindrical samples 2008A to 2008l can be determined with high spatial resolution. Such investigations are of interest, for example, in the analysis of subcellular structures in biological samples.

[0180] Furthermore, it is planned, for example, to examine the cylindrical samples 2008A to 2008I using X-rays in order to create a series of projection images of the cylindrical samples 2008A to 2008I from different directions. From this series of projection images, a three-dimensional structure of the interior of the cylindrical samples 2008A to 2008I can be determined with low to medium spatial resolution. Such investigations are of interest, for example, in the analysis of defects in microelectronic components or for the analysis of the porosity of biological or geological samples.

[0181] Fig.Figure 13 shows a further process step S8 of an embodiment of the method according to the invention, which is carried out, for example, after process step S7. In process step S8, the samples 2008A to 2008l are processed with the ion beam of the combination device 200. Essentially, in this embodiment, it is provided that after the samples 2008A to 2008l have been produced using the light beam, the produced samples 2008A to 2008l are post-processed with the ion beam in order to bring the produced samples 2008A to 2008l even closer to a cylindrical shape and / or to modify the cylindrical shape of the samples 2008A to 2008l. For example, in this embodiment, a tip is produced on the samples 2008A to 2008l, in particular to enable investigations of the tip by means of atom probe tomography.Regarding atom probe tomography, reference is made to the statements made above, which also apply here.

[0182] In a further embodiment of the method according to the invention, it is additionally or alternatively provided that a layer, for example a lacquer layer or synthetic resin layer, is applied to the surface of the object 125. In particular, it is provided that the thickness of the layer is substantially 10% to 20% of the height of the sample 2008A to 2008l to be produced. It is particularly provided that the layer is applied to the surface of the object 125 in liquid form. The material of the layer is cured, for example, by evaporation of a solvent contained in the material, by heating, and / or by irradiation with UV light for a certain period of time. In this embodiment of the method according to the invention, it is now provided that, after the production of the sample 2008A to 2008l, the previously applied layer is removed again, for example, with a solvent.It has been shown that this embodiment of the inventive method makes it particularly easy to achieve the cylindrical shape of sample 2008A to 2008l.

[0183] All described embodiments of the method according to the invention are not limited to the above-mentioned sequence of the explained process steps. Rather, any sequence of the aforementioned process steps that is suitable for the invention can be chosen in the method according to the invention.

[0184] The features of the invention disclosed in this description, in the drawings, and in the claims can be essential for realizing the invention in its various embodiments, both individually and in any combination. The invention is not limited to the described embodiments. It can be varied within the scope of the claims and taking into account the knowledge of the person skilled in the art. Reference symbol list 100 SEM 101 Electron source 102 Extraction electrode 103 Anode 104 Beam guide tube 105 first condenser lens 106 second condenser lens 107 first lens 108 first aperture unit 108A first aperture 109 second aperture unit 110 pole shoes 111 Coil 112 individual electrodes 113 Pipe electrode 114 object holders 115 Grid system 116 first detector 116A Counterfield grid 117 second detector 118 second aperture 119 Chamber detector 120 sample chamber 121 third detector 122 Sample table 123 Control unit 124 Monitor 125 objects 126 database 127 processor 200 combination device 201 Sample chamber 300 ion beam device 301 Ion Beam Generators 302 Extraction electrode in the ion beam device 303 Condenser lens 304 second lens 306 adjustable or selectable aperture 307 first electrode arrangement 308 second electrode arrangement 400 particle beam device with corrector unit 401 Particle beam column 402 Electron source 403 Extraction electrode 404 Anode 405 first electrostatic lens 406 second electrostatic lens 407 third electrostatic lens 408 magnetic deflection unit 409 first electrostatic beam deflection unit 409A first multipole unit 409B second multipole unit 410 Beam deflection device 411A first magnetic sector 411B second magnetic sector 411C third magnetic sector 411D fourth magnetic sector 411E fifth magnetic sector 411F sixth magnetic sector 411G seventh magnetic sector 413A first mirror electrode 413B second mirror electrode 413C third mirror electrode 414 electrostatic mirror 415 fourth electrostatic lens 416 second electrostatic beam deflection unit 416A third multipole unit 416B fourth multipole unit 417 third electrostatic beam deflection unit 418 fifth electrostatic lens 418A fifth multipole unit 418B sixth multipole unit 419 first analysis detector 420 Beam guide tube 421 Lens 422 magnetic lens 423 sixth electrostatic lens 424 Sample table 425 object 426 Sample chamber 427 Detection beam path 428 second analysis detector 429 Grid system 432 additional magnetic deflection element 500 radiation detector 600 first movement unit 601 Housing 602 second movement unit 603 first table rotation axis 604 third movement unit 605 fourth movement unit 606 fifth movement unit 607 second table rotation axis 608 Control unit 609 bracket 709 first beam axis 710 second beam axis 1000 Gas supply unit 1001 Gas reservoir in the form of a precursor reservoir 1002 Supply line 1003 cannulas 1004 Valve 1005 Adjustment unit 1006 Temperature measuring unit 1007 Temperature setting unit 2000 material processing equipment 2001 Object table 2002 Destination facility 2003 Light beam device 2003A Guide system 2004 particle beam device 2005 Control unit 2005A Processor 2006 grid area 2007A first area 2007B second area 2007C third area 2007D fourth area 2007E fifth area 2007F sixth area 2007G seventh area 2007H eighth area 2007I ninth area 2007J tenth area 2008A first sample 2008B second sample 2008C third sample 2008D fourth sample 2008E fifth sample 2008F sixth sample 2008G seventh sample 2008H eighth sample 2008l ninth sample 2009A first area 2009B second area 2009C third area 2009D fourth area 2009E fifth area 2009F sixth area 2009G seventh area 2009H eighth area 2009I ninth area 2010A first center point 2010B second center point 2010C third center 2010D fourth center point 2010E fifth center 2010F sixth midpoint 2010G seventh center 2010H eighth center point 2010I ninth center point 2011A first straight 2011D fourth straight A distance line A1 Distance line L1 first line L2 second line L3 third line M1 first stepper motor M2 second stepper motor M3 third stepper motor M4 fourth stepper motor M5 fifth stepper motor OA optical axis OA1 first optical axis OA2 second optical axis OA3 third optical axis P1 first point P2 second point P3 third point P4 fourth point P5 fifth point P6 sixth point R1 first edge R4 fourth edge RI1 first direction RI2 second direction RI3 third direction RP1 first point on the first edge RP4 fourth point on the fourth edge S1 to S8 process steps

Claims

[1] Method for producing at least one sample (2008A to 20081) on an object (125, 425) using a material processing device (2000) which has at least one light beam device (2003) for providing at least one light beam, the method comprising the following steps: - guiding the light beam over a surface of the object (125, 425) along a first line (L1, L2, L3) in a first direction (RI1, RI2, RI3) using a guide device (2003A) for the light beam and / or by moving the object (125, 425) using a movable stage (122, 424) on which the object (125, 425) is arranged, wherein material of the object (125, 425) is removed when the light beam is guided over the surface of the object (125, 425), - changing the first direction (RI1, RI2, RI3) into a second direction (RI1, RI2, RI3), wherein the first direction (RI1, RI2, RI3) is changed into the second direction (RI1, RI2, RI3) by rotating the first line (L1, L2, L3) about an axis of rotation on the surface of the object (125, 425), - guiding the light beam over the surface of the object (125, 425) along a second line (L1, L2, L3) in the second direction (RI1, RI2, RI3), wherein the first direction (RI1, RI2, RI3) and the second direction (RI1, RI2, RI3) are different, wherein when guiding the light beam along the second line (L1, L2, L3) over the surface of the object (125, 425), material of the object (125, 425) is removed, wherein - the light beam is provided in pulsed form by the light beam device (2003) and is guided onto the surface of the object (125, 425) in such a way that the light beam removes material from the object (125, 425) in a first operating state of the light beam device (2003) and that the light beam is not guided onto the object (125, 425) in a second operating state, and wherein - in the first operating state, the sample (2008A to 20081) is produced by removing material from the object (125, 425). [2] The method according to claim 1, wherein the sample (2008A to 20081) is a first sample (2008A to 20081) and wherein in the first operating state at least one second sample (2008A to 20081) is produced by removing material from the object (125, 425) using the light beam. [3] Method according to claim 2, wherein in the first operating state, first the first sample (2008A to 20081) and then the second sample (2008A to 20081) are produced. [4] Method according to claim 2 or 3, wherein the first sample (2008A to 20081) has a first surface (2009A to 20091) with a first center point (2010A to 20101), wherein the second sample (2008A to 20081) has a second surface (2009A to 20091) with a second center point (2010A to 20101), and wherein the first sample (2008A to 20081) and the second sample (2008A to 20081) are manufactured such that the first center point (2010A to 20101) is at a distance from the second center point (2010A to 20101), wherein the distance has at least one of the following features: (i) the distance corresponds to a diameter or a multiple of the diameter of the light beam; (ii) the pitch is less than 900 µm, less than 800 µm, less than 700 µm, less than 600 µm, less than 500 µm, less than 400 µm, less than 300 µm, less than 200 µm, less than 100 µm, less than 80 µm, less than 60 µm, less than 50 µm, less than 30 µm, less than 20 µm or less than 10 µm. [5] Method according to claim 4, wherein a first marking is arranged on the first surface (2009A to 2009I) of the first sample (2008A to 2008I) and / or a second marking is arranged on the second surface (2009A to 2009I) of the second sample (2008A to 2008I). [6] The method of claim 1, wherein the sample (2008A to 20081) is part of a plurality of samples (2008A to 20081) and wherein in the first operating state the plurality of samples (2008A to 20081) are produced by removing material from the object (125, 425) using the light beam. [7] The method of claim 6, wherein the plurality of samples (2008A to 2008I) comprises at least 5 samples, at least 10 samples, or at least 15 samples on the object (125, 425). [8] Method according to claim 6 or 7, wherein in the first operating state of the light beam device (2003) the individual samples (2008A to 20081) of the plurality of samples (2008A to 20081) are each produced one after the other. [9] Method according to one of claims 6 to 8, wherein each of the samples (2008A to 20081) of the plurality of samples (2008A to 20081) has a surface (2009A to 20091) with a center point (2010A to 20101), and wherein the plurality of samples (2008A to 20081) is produced such that the center point (2010A to 20101) of the surface (2009A to 20091) of at least a first sample (2008A to 20081) of the plurality of samples (2008A to 20081) is aligned with the center point (2010A to 20101) of the surface (2009A to 20091) of at least a second sample (2008A to 20081) of the plurality of samples (2008A to 20081) has a distance, wherein the distance has at least one of the following features: (i) the distance corresponds to a diameter or a multiple of the diameter of the light beam; (ii) the distance is less than 900 µm, less than 800 µm, less than 700 µm, less than 600 µm, less than 500 µm, less than 400 µm, less than 300 µm, less than 200 µm, less than 100 µm, less than 80 µm, less than 60 µm, less than 50 µm, less than 30 µm, less than 20 µm or less than 10 µm, wherein no further sample (2008A to 20081) of the plurality of samples (2008A to 20081) is arranged between the first sample (2008A to 20081) and the second sample (2008A to 20081). [10] The method according to claim 9, wherein a marker is arranged on the surface (2009A to 20091) of each of the samples (2008A to 20081). [11] Method according to one of the preceding claims, wherein the method has at least one of the following features: (i) the first direction (RI1, RI2, RI3) is changed into the second direction (RI1, RI2, RI3) by rotating the first line (L1, L2, L3) in a plane; (ii) the first line (L1, L2, L3) extends from a first point (P1, P3, P5) on the surface of the object (125, 425) towards a second point (P2, P4, P6) on the surface of the object (125, 425), wherein the axis of rotation intersects the first line (L1, L2, L3). [12] Method according to one of the preceding claims, wherein the axis of rotation is a first axis of rotation and wherein the method comprises the following steps: - changing the second direction (RI1, RI2, RI3) into a third direction (RI1, RI2, RI3), wherein the second direction (RI1, RI2, RI3) is changed into the third direction (RI1, RI2, RI3) by rotating the second line (L1, L2, L3) about a second axis of rotation on the surface of the object (125, 425), and - guiding the light beam over the surface of the object (125, 425) along a third line (L1, L2, L3) in the third direction (RI1, RI2, RI3), wherein the second direction (RI1, RI2, RI3) and the third direction (RI1, RI2, RI3) are different and wherein material of the object (125, 425) is removed when the light beam is guided along the third line (L1, L2, L3) over the surface of the object (125, 425). [13] The method according to claim 12, wherein the second direction (RI1, RI2, RI3) is changed into the third direction (RI1, RI2, RI3) by rotating the second line (L1, L2, L3) in the plane. [14] Method according to one of the preceding claims, wherein the light beam is guided over the surface of the object (125, 425) in steps of less than 300 nm, less than 200 nm or less than 100 nm. [15] Method according to one of the preceding claims, wherein the sample (2008A to 2008I) is processed with a particle beam, the particle beam being provided by a particle beam generator (101, 301, 402) of the material processing device (2000). [16] Method according to one of the preceding claims, having one of the following features: (i) a laser beam is used as the light beam, wherein the light beam device (2003) is designed as a laser beam device; (ii) a pulsed laser beam is used as the light beam, wherein the light beam device (2003) is designed as a laser beam device; (iii) a laser beam from an ultrashort pulse laser beam device (2003) is used as the light beam. [17] Computer program product with a program code which can be loaded into a processor (127, 2005A) and which, when executed, controls a material processing device (2000) such that a method according to at least one of the preceding claims is carried out. [18] Material processing device (2000) for processing an object (125, 425), with - at least one light beam device (2003) for providing at least one light beam; - at least one guide device (2003A) for guiding the light beam and / or at least one movable object table (122, 424); and with - at least one control device (123, 2005) with a processor (127, 2005A) in which a computer program product according to claim 17 is loaded. [19] Material processing device (2000) according to claim 18, wherein the material processing device (2000) has one of the following features: (i) the light beam device (2003) is designed as a laser beam device and the light beam is designed as a laser beam; (ii) the light beam device (2003) is designed as a laser beam device and the light beam is designed as a pulsed laser beam; (iii) the light beam device (2003) is designed as an ultrashort pulse laser beam device and the light beam is designed as a pulsed laser beam. [20] Material processing device (2000) according to claim 18 or 19, wherein the material processing device (2000) has the following features: - at least one particle beam device (100, 200, 400) with at least one beam generator (101, 301, 402) for generating a particle beam with charged particles, - at least one objective lens (107, 304, 421) for focusing the particle beam onto the object (125, 425), - at least one scanning device (115, 307, 308, 429) for scanning the particle beam over the object (125, 425), - at least one detector (116, 117, 119, 121, 419, 428, 500) for detecting interaction particles and / or interaction radiation resulting from an interaction of the particle beam with the object (125, 425), and - at least one display device (124) for displaying an image and / or an analysis of the object (125, 425). [21] Material processing device (2000) according to claim 20, wherein the beam generator (101) is designed as a first beam generator and the particle beam as a first particle beam with first charged particles, wherein the objective lens (107) is designed as a first objective lens for focusing the first particle beam onto the object (125, 425), and wherein the particle beam device (200) further comprises: - at least one second beam generator (301) for generating a second particle beam with second charged particles; and - at least one second objective lens (304) for focusing the second particle beam onto the object (125, 425). [22] Material processing device (2000) according to claim 20 or 21, having at least one of the following features: (i) the particle beam device (100, 200, 400) is an electron beam device and / or an ion beam device; (ii) the material processing device (2000) is designed as the particle beam device (100, 200, 400).

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