Method for dividing a semiconductor substrate and substrate dividing device

Abstract

A method for dividing a semiconductor substrate, comprising forming a separating layer (115) in a semiconductor substrate (110), wherein the semiconductor substrate (110) comprises a first substrate section (114) between a first surface (111) and the separating layer (115) and a second substrate section (116) between the separating layer (115) and a second surface (112) opposite the first surface (111). An auxiliary layer (120) is formed on the first surface (111), wherein the auxiliary layer (120) and the semiconductor substrate (110) have different coefficients of thermal expansion. A main cooling plate (210) is brought into contact with a solid substrate assembly (100) comprising the semiconductor substrate (110) and the auxiliary layer (120) during a cooling period. The main cooling plate (210) is cooled during the cooling period, thereby cooling the auxiliary layer (120).Mechanical vibrations are applied directly to the main cooling plate (210) during the cooling period, splitting off the first substrate section (114) from the second substrate section (116).

Description

TECHNICAL AREA

[0001] The present disclosure relates to methods for dividing a semiconductor substrate and substrate dividing devices. BACKGROUND

[0002] Thin crystalline semiconductor substrates, such as semiconductor wafers, can be separated from a crystalline boule by sawing or by splitting along prepared parting lines. These parting lines are formed by locally modifying the boule material through laser irradiation, ion implantation, or other methods. Mechanical forces then cleave the crystalline boule along the parting line. In some methods, an auxiliary layer made of a material with a coefficient of thermal expansion significantly different from that of the crystalline boule is bonded tightly to it. A heat treatment of the substrate assembly, including the crystalline boule and the auxiliary layer, generates thermomechanical stresses, causing the crystalline boule to cleave along the parting line.There is a constant need to improve the yield of thin substrates obtained from crystalline boules through cleavage processes. SUMMARY

[0003] An example from the present disclosure relates to a method for dividing a semiconductor substrate. The method comprises forming a separating layer in a semiconductor substrate, which includes a first substrate section between a first surface and the separating layer, and a second substrate section between the separating layer and a second surface opposite the first surface. An auxiliary layer is formed on the first surface, wherein the auxiliary layer and the semiconductor substrate have different coefficients of thermal expansion. A main cooling plate is brought into contact with a solid substrate assembly comprising the semiconductor substrate and the auxiliary layer during a cooling period. The main cooling plate is cooled during the cooling period, thereby cooling the auxiliary layer. Mechanical vibrations are applied directly to the main cooling plate during the cooling period, splitting the first substrate section from the second substrate section.

[0004] If the semiconductor substrate is relatively thin, it may sometimes be unable to withstand the forces required to initiate the cleavage process by cooling the solid substrate assembly, resulting in the semiconductor substrate fracturing outside the interface. By applying mechanical vibrations, the cleavage process can be initiated along the interface at significantly lower thermomechanical stresses. This reduces the probability of the semiconductor substrate fracturing outside the interface and improves the yield of the cleavage process.

[0005] Another example from the present disclosure relates to a further method for dividing a semiconductor substrate. The method comprises forming a separating layer in a semiconductor substrate, wherein the semiconductor substrate comprises a first substrate section between a first surface and the separating layer, and a second substrate section between the separating layer and a second surface opposite the first surface. An auxiliary layer is formed on the first surface, wherein the auxiliary layer and the semiconductor substrate have different coefficients of thermal expansion. A main cooling plate is brought into contact with a solid substrate assembly comprising the semiconductor substrate and the auxiliary layer during a cooling period. A vibrating plate is brought into contact with the solid substrate assembly on one side opposite the main cooling plate. The main cooling plate is cooled during the cooling period, thereby cooling the auxiliary layer.Mechanical vibrations are applied to the solid substrate composite using the vibrating plate during and / or after the cooling period, splitting the first substrate section from the second substrate section.

[0006] Another example from the present disclosure relates to a substrate division device. The substrate division device comprises a main cooling plate and a vibration excitation source. The main cooling plate comprises a main cooling surface and is configured to bring the main cooling surface into direct contact with a solid substrate assembly during a cooling period. The vibration excitation source is configured to excite vibrations of the main cooling plate along at least one spatial axis during the cooling period.

[0007] Another example from the present disclosure relates to a further substrate division device. The substrate division device comprises a main cooling plate and a vibrating plate. The main cooling plate comprises a main cooling surface and is configured to bring the main cooling surface into direct contact with a solid substrate assembly for a cooling period. The vibrating plate comprises an auxiliary surface opposite the main cooling surface of the main cooling plate. The main cooling plate and the vibrating plate are configured to clamp the solid substrate assembly between the main cooling surface and the auxiliary surface during the cooling period. The vibrating plate is further configured to excite vibrations of the solid substrate assembly along at least one spatial axis during and / or after the cooling period.

[0008] The expert will recognize additional features and advantages upon reading the following detailed description and upon examining the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] The present disclosure is illustrated by way of example and without limitation in the figures of the accompanying drawings, in which the same reference symbols refer to similar or identical elements. The elements of the drawings are not necessarily to scale relative to one another. The features of the various examples shown may be combined, provided they are not mutually exclusive. Fig. 1A to 1D represent a method for dividing a semiconductor substrate using a main cooling plate in a support configuration according to one embodiment. Fig. Figures 2A to 2B represent a cooling phase of a method for dividing a semiconductor substrate using a main cooling plate in a suspension configuration according to one embodiment. Fig. Figure 3 represents a main cooling plate with piezo actuators which are mounted in a suspension configuration in combination with a counter plate in a support configuration in a cooling period of a solid substrate composite according to one embodiment. Fig. 4A to 4B represent phases of a method for dividing a semiconductor substrate using a main cooling plate in suspension configuration and an auxiliary cooling plate in support configuration according to one embodiment. Fig. Figure 5 represents a cooling phase of a method for dividing a semiconductor substrate using a vibration-free main cooling plate in suspension configuration and a vibration plate in support configuration according to another embodiment. Fig. Figure 6 is a schematic vertical cross-sectional view of a substrate dividing device comprising a main cooling plate configured for vibration and a substrate holder, according to an embodiment relating to a main cooling plate in suspension configuration. Fig. Figure 7 is a schematic vertical cross-sectional view of a substrate dividing device comprising a main cooling plate configured for vibration and a substrate holder, according to an embodiment relating to a main cooling plate in a support configuration. Fig. Figure 8 is a schematic vertical cross-sectional view of a substrate dividing device comprising a counter plate and a main cooling plate with piezo actuators, according to an embodiment relating to a main cooling plate in suspension configuration. Fig. Figure 9 is a schematic vertical cross-sectional view of a substrate dividing device comprising a main cooling plate with piezo actuators integrated into suspension units, according to one embodiment. Fig. Figure 10 is a schematic vertical cross-sectional view of a substrate dividing device comprising a main cooling plate configured to vibrate and a non-vibrating auxiliary cooling plate, according to one embodiment. Fig. Figure 11 is a schematic vertical cross-sectional view of a substrate dividing device comprising a main cooling plate configured for vibration and an auxiliary cooling plate configured for vibration, according to one embodiment. Fig. Figure 12 is a schematic vertical cross-sectional view of a substrate dividing device comprising a vibration-free main cooling plate in suspension configuration and a vibration plate in support configuration, according to another embodiment. DETAILED DESCRIPTION

[0010] The following detailed description refers to the accompanying drawings, which form part thereof and in which specific examples of methods and devices for separating semiconductor substrates are shown for illustration. It is understood that other examples may be used and structural or logical modifications may be made without departing from the scope of this disclosure. For example, features shown or described for one example may be used in conjunction with other examples to give yet another example. It is intended that this disclosure includes such modifications and variations. The examples are described using specific language, which should not be construed as limiting the scope of the appended claims. The drawings are not to scale and are for illustrative purposes only.Corresponding elements are designated with the same reference symbols in the various drawings, unless otherwise specified.

[0011] The terms "have," "contain," "include," "encompass," and the like are open-ended, indicating the presence of the specified structures, elements, or features, but not excluding the presence of additional elements or features. The articles "a," "an," and "the" are intended to include both the plural and the singular unless the context clearly indicates otherwise.

[0012] Ranges specified for physical dimensions include limit values. For example, a range for a parameter y from a to b is a ≤ y ≤ b. The same applies to ranges with a limit value such as "at most" and "at least".

[0013] The terms "on" and "over" are not to be interpreted as meaning only "directly on" and "directly over". Rather, if an element is positioned "on" or "over" another element (e.g., a layer "on" or "over" another layer or "on" or "over" a substrate), another component (e.g., another layer) can be positioned between the two elements (e.g., another layer can be positioned between a layer and a substrate if the layer is "on" or "over" the substrate).

[0014] An example from the present disclosure relates to a method for dividing a semiconductor substrate. The method may include forming a separating layer in a semiconductor substrate, wherein the semiconductor substrate may comprise a first substrate section between a first surface and the separating layer, and a second substrate section between the separating layer and a second surface opposite the first surface. An auxiliary layer may be formed on the first surface. The auxiliary layer and the semiconductor substrate may have different coefficients of thermal expansion. A main cooling plate may be brought into contact with a solid substrate assembly comprising the semiconductor substrate and the auxiliary layer during a cooling period. The main cooling plate may be cooled during the cooling period, thereby cooling the auxiliary layer.Mechanical vibrations can be applied directly to the main cooling plate during and / or after the cooling period, whereby the first substrate section can be separated from the second substrate section.

[0015] The semiconductor substrate can be, for example, a wafer or a boule. The shape of the semiconductor substrate can be a cylinder with an approximately planar first surface at one end and an approximately planar second surface at the other. The first and second surfaces can be parallel or at least approximately parallel to each other. The cylinder can be a right-hand cylinder, such as a right circular cylinder with a circular base. In other examples, the base of the cylinder can be a circle with a notch or be flat. The semiconductor substrate can be a so-called semiconductor puck, sometimes also referred to as a semiconductor boule or ingot. The semiconductor substrate can be polycrystalline or monocrystalline (e.g., a monocrystalline puck).

[0016] The semiconductor can be an elemental semiconductor such as silicon (Si) or germanium (Ge), or a compound semiconductor, e.g., a group IV compound semiconductor such as silicon carbide (SiC), or a group III / V compound semiconductor such as gallium arsenide (GaAs) or gallium nitride (GaN). In one example, the semiconductor substrate is a SiC wafer or a SiC puck with polished surfaces.

[0017] The interface can be formed by laser irradiation through the first and / or second surface, with the laser radiation focused to a predefined distance from the entry surface. The focused laser radiation locally heats the crystal structure and locally modifies the crystalline lattice. In modified regions, the crystal lattice is severely damaged, e.g., amorphized. In the modified regions of a compound semiconductor, the compound can be separated into its constituent parts. Additionally, the heating can induce subcritical cracks in the semiconductor substrate, with the subcritical cracks forming at or near the modified regions and propagating along principal crystal planes.Alternatively, the separating layer can be formed by implanting ions through the first surface and / or the second surface, or by other forms of particles and / or electromagnetic radiation that locally modify the crystalline lattice of the semiconductor substrate.

[0018] The coefficient of thermal expansion (CTE) of the auxiliary layer can differ significantly from that of the semiconductor substrate. For example, the CTE of the auxiliary layer can be at least ten times, e.g., at least 30 times, or at least 50 times greater than that of the semiconductor substrate. In addition to the CTE difference, a linear CTE profile in the auxiliary layer over a wide temperature range can be advantageous. The auxiliary layer can also exhibit a comparatively high thermal conductivity.

[0019] Forming the auxiliary layer on the first surface of the semiconductor substrate may involve a bonding process to enable the formation of a strong bond that is elastic during the subsequent cooling process. For example, prior to applying the auxiliary layer, an application surface of the auxiliary layer and / or the first surface of the semiconductor substrate may undergo chemical and / or physical surface treatment (e.g., with plasma). The surface treatment may remove contaminants, planarize the surface, and / or enable / disable surface bonds.

[0020] In addition to the semiconductor substrate and the auxiliary layer, the solid substrate composite can comprise one or more additional layers, films, and / or foils. For example, a transport film can be applied to the side of the auxiliary layer facing the semiconductor substrate. Alternatively or additionally, an auxiliary film can be applied to the second surface of the semiconductor substrate. Alternatively or additionally, a separating film can be provided between the semiconductor substrate and the auxiliary layer. Each of the additional layers, films, and / or foils can be homogeneous or can comprise two or more sublayers of different composition. Each of the additional layers and / or films can be thinner than the auxiliary layer. The auxiliary layer can have a thermal conductivity of at least 0.1 W / (m·K).

[0021] The main cooling plate can comprise two parallel plate sections and a coolant channel formed along an interface between two plate sections. Each plate section can include a main part made of an elemental metal, such as copper (Cu) or aluminum (Al), a metal compound, or a metal alloy. The main cooling plate can be in a supported configuration, where the cooling surface is oriented against the direction of gravity (upwards), or in a suspended configuration, where the cooling surface is oriented in the direction of gravity (downwards).

[0022] Bringing the main cooling plate into contact with the solid substrate composite may involve placing the solid substrate composite on the cooling surface if the main cooling plate has a support configuration, or lowering the main cooling plate towards a solid substrate composite placed beneath the cooling surface until the cooling surface reaches the solid substrate composite and is in solid contact with it.

[0023] The period during which the main cooling plate is in direct solid contact with the solid substrate composite defines the cooling period, regardless of any temperature difference between the main cooling plate and the solid substrate composite.

[0024] Cooling the main cooling plate can involve supplying a coolant, such as liquid nitrogen (N2), into the coolant channel in response to a control signal received from a control unit. During the cooling period, the main cooling plate cools the solid substrate composite, which includes the auxiliary layer. The coolant flow can begin before the cooling period (i.e., before direct solid-state contact is established between the main cooling plate and the solid substrate composite), simultaneously with the establishment of the solid-state contact, or after the establishment of the solid-state contact. The coolant flow can end before the end of the cooling period (i.e., before the direct solid-state contact between the main cooling plate and the solid substrate composite is broken), simultaneously with the breaking of the solid-state contact, or after the solid-state contact is broken. During the cooling period, the coolant flow can be constant or vary over time.

[0025] The comparatively high difference in CTE, combined with the strong bond between the semiconductor substrate and the auxiliary layer, results in high thermomechanical stress in both the auxiliary layer and the semiconductor substrate. Within the semiconductor substrate, the subcritical cracks can propagate further along the principal crystal planes. Depending on the crystal lattice of the semiconductor substrate and the orientation of the principal crystal planes with respect to the first and second surfaces, the crystal can crack between lattice defects in different crystal planes. Regardless of the lattice type and orientation, a continuous crack surface can develop, eventually separating the semiconductor substrate completely into the first and second sections in most cases.

[0026] If the total thickness of the semiconductor substrate is less than a critical thickness, the high mechanical forces acting between the auxiliary layer and the semiconductor substrate cause significant bending of the solid substrate composite. The mechanical strength of the semiconductor substrate may then be insufficient to withstand the cooling cycle, and the semiconductor substrate may fracture outside the separation layer before a continuous crack surface completely separates the semiconductor substrate into the first and second sections. Additionally, the propagation of the continuous crack surface may cease before the first section is completely separated from the second. For example, the continuous crack surface may omit a central portion of the separation layer. For a single-crystal SiC puck or SiC wafer, the critical thickness may be 3 mm or less, e.g., 2 mm or 1.5 mm.

[0027] The application of mechanical vibrations to the main cooling plate can begin at the start of the cooling period or later, for example, when the main cooling plate or the auxiliary layer reaches a predetermined temperature. The mechanical vibrations can consist of a sequence of pulses and / or oscillations. The main cooling plate can vibrate along a vertical axis orthogonal to the cooling surface and / or in a horizontal plane parallel to the cooling surface and / or about a vertical axis of rotation through a vertical axis of symmetry of the main cooling plate. The amplitude of the mechanical vibrations can be constant or vary over time. A maximum amplitude of the main cooling plate vibrations can be in the range of 10 nm to 100 µm. The frequency of the pulses and / or oscillations can be constant or vary over time. A maximum frequency of the main cooling plate vibrations can be in the range of 1 Hz to 100 kHz.

[0028] By applying mechanical vibrations, a continuous crack surface can develop across the entire cross-section of the semiconductor substrate, even at higher temperatures and lower thermomechanical stresses than would occur without vibration. It may be possible to complete the cleavage process along the interface at significantly lower thermomechanical stresses. The probability of the semiconductor substrate fracturing outside the interface can be reduced, and the yield of the cleavage process can be improved.

[0029] For example, the auxiliary layer can comprise a material that exhibits a glass transition at a glass transition temperature, wherein the auxiliary layer is cooled to a temperature below the glass transition temperature.

[0030] The auxiliary layer can comprise or consist of any material undergoing a glass transition, such as a polymer, another organic glass, or an inorganic glass. The glass transition can significantly alter the mechanical properties, such as viscosity and / or elasticity, of the material undergoing the glass transition. The glass transition can cause the auxiliary layer to become harder and / or more brittle, allowing it to exert significantly higher mechanical stress on the semiconductor substrate after the glass transition than before. The CTE of the auxiliary layer can be at least 250 ppm / °C (250 × 10⁻⁶ ppm). -6 K -1 ), for example, at least 300 ppm / °C (300·10 -6 K -1 ).

[0031] As one example, the interface can be formed by locally modifying the composition and / or structure of the semiconductor substrate. The interface can be formed by laser irradiation through the first and / or second surface, with the laser radiation focused to a predefined distance from the entry surface. The focused laser radiation can locally heat the crystal structure and locally modify the crystalline lattice. In modified regions, the crystal lattice is severely damaged, e.g., amorphized. In the modified regions of a compound semiconductor, the connection into the components can be severed. Additionally, the heating can induce subcritical cracks in the semiconductor substrate, with the subcritical cracks forming at or near the modified regions and propagating along principal crystal planes.The subcritical cracks are sufficiently short that most do not merge into one another, and no continuous separation plane is formed across the entire cross-section of the semiconductor substrate. The maximum lateral extent of a subcritical crack can be less than the lateral distance between adjacent modified regions. Alternatively, the separation layer can be formed by implanting ions through the first and / or second surface, or by other forms of particles and / or electromagnetic radiation that locally modify the crystalline lattice of the semiconductor substrate.

[0032] For example, the main cooling plate can be brought into direct contact with the auxiliary layer or the semiconductor substrate. Solid-state contact between the main cooling plate and the auxiliary layer or the semiconductor substrate can provide high thermal conductivity between the main cooling plate and the semiconductor substrate, as well as a short processing time.

[0033] For example, mechanical vibrations can be applied to one side of the main cooling plate facing the solid substrate assembly. The side of the main cooling plate facing the solid substrate assembly (the back of the cooling plate) is typically easily accessible for installing additional components.

[0034] For example, mechanical vibrations can be generated by one or more vibration excitation sources attached to the main cooling plate. Specifically, the vibration excitation source(s) can be installed on the back of the cooling plate, which is typically easily accessible for installing additional components.

[0035] For example, mechanical vibrations can be generated after the auxiliary layer has reached the target temperature. Applying mechanical vibrations at an early stage can induce erratic development of subcritical cracks. Applying mechanical vibrations only after some thermomechanical stresses have been generated can support a more controlled initial phase of the development of a continuous crack surface.

[0036] According to one example, the method can further include bringing an auxiliary cooling plate into contact with one side of the solid substrate composite opposite the main cooling plate and cooling the auxiliary cooling plate.

[0037] For example, the main cooling plate is in direct solid-state contact with the semiconductor substrate or with an additional layer, film, or foil on the side of the semiconductor substrate opposite the auxiliary layer, and the auxiliary cooling plate is in direct contact with the auxiliary layer or with another additional layer, film, or foil between the auxiliary layer and the auxiliary cooling plate. In another example, the main cooling plate is in direct solid-state contact with the auxiliary layer or with an additional layer, film, or foil on the side of the auxiliary layer opposite the semiconductor substrate, and the auxiliary cooling plate is in direct contact with the semiconductor substrate or with another additional layer, film, or foil between the semiconductor substrate and the auxiliary cooling plate.

[0038] The auxiliary cooling plate can comprise two parallel plate sections and a coolant channel formed along an interface between two plate sections. Each plate section can include a main part made of an elemental metal, such as copper (Cu) or aluminum (Al), a metal compound, or a metal alloy. The auxiliary cooling plate is in a suspended configuration if the main cooling plate is in a supported configuration.

[0039] In the latter case, bringing the auxiliary cooling plate into contact with the solid substrate composite can involve placing the solid substrate composite on an auxiliary cooling surface of the auxiliary cooling plate and lowering the main cooling plate towards the solid substrate composite until the main cooling surface is in solid contact with the solid substrate composite. The solid substrate composite is clamped between the main cooling surface of the main cooling plate and the auxiliary cooling surface of the auxiliary cooling plate.

[0040] The auxiliary cooling plate can be in direct solid-state contact with the solid substrate composite for the entire cooling period or at least for a portion of it. Cooling the auxiliary cooling plate can involve supplying a coolant, such as liquid nitrogen (N₂), into the coolant channel in response to a control signal received from a control unit. The coolant flow can begin before, during, or after the start of the cooling period. The coolant flow can also end before, during, or after the end of the cooling period. The coolant flow through the auxiliary cooling plate's coolant channel can be constant or vary over time.

[0041] According to one example, the method may further include the direct application of mechanical vibrations to the auxiliary cooling plate during and / or after the cooling period, at least until the first substrate section is separated from the second substrate section.

[0042] The mechanical vibrations can consist of a sequence of pulses and / or oscillations. The auxiliary cooling plate can vibrate along a vertical axis orthogonal to the cooling surface and / or in a horizontal plane parallel to the cooling surface and / or about a vertical axis of rotation through a vertical axis of symmetry of the main cooling plate. The amplitude of the mechanical vibrations can be constant or vary over time. A maximum amplitude of the vibrations of the main cooling plate can range from 10 nm to 100 µm. The frequency of the pulses and / or oscillations can be constant or vary over time. A maximum frequency of the vibrations of the main cooling plate can range from 1 Hz to 100 kHz.

[0043] The mechanical vibrations of the auxiliary cooling plate and the main cooling plate can be applied simultaneously or alternately. The mechanical vibrations of the auxiliary cooling plate and the main cooling plate can have the same frequency content and can be applied in phase or out of phase. According to other examples, the mechanical vibrations of the auxiliary cooling plate and the main cooling plate can have different frequency contents. The maximum amplitudes of the mechanical vibrations of the auxiliary cooling plate and the main cooling plate can be the same or different.

[0044] Another example from the present disclosure relates to a further method for dividing a semiconductor substrate. The method may include forming a separating layer in a semiconductor substrate, wherein the semiconductor substrate may comprise a first substrate section between a first surface and the separating layer, and a second substrate section between the separating layer and a second surface opposite the first surface. An auxiliary layer may be formed on the first surface, wherein the auxiliary layer and the semiconductor substrate may have different coefficients of thermal expansion. A main cooling plate may be brought into contact with a solid substrate assembly comprising the semiconductor substrate and the auxiliary layer during a cooling period. A vibrating plate may be brought into contact with the solid substrate assembly on one side opposite the main cooling plate.The main cooling plate can be cooled during the cooling period, while the auxiliary layer is also cooled. Mechanical vibrations can be applied to the solid substrate composite using the vibrating plate during and / or after the cooling period, separating the first substrate section from the second substrate section.

[0045] For example, the main cooling plate is in direct solid-state contact with the semiconductor substrate or with an additional layer, film, or foil on the side of the semiconductor substrate opposite the auxiliary layer, and the vibrating plate is in direct contact with the auxiliary layer or with another additional layer, film, or foil between the auxiliary layer and the vibrating plate. In another example, the main cooling plate is in direct solid-state contact with the auxiliary layer or with an additional layer, film, or foil on the side of the auxiliary layer opposite the semiconductor substrate, and the vibrating plate is in direct contact with the semiconductor substrate or with another additional layer, film, or foil between the semiconductor substrate and the vibrating plate.

[0046] The vibratory plate is in a suspended configuration when the main cooling plate is in a supported configuration. The solid substrate composite is clamped between the main cooling surface of the main cooling plate and a working surface of the vibratory plate.

[0047] The application of mechanical vibrations by the vibrating plate can begin at the start of the cooling period or later, for example, when the main cooling plate or the auxiliary layer reaches a predetermined temperature. The mechanical vibrations can consist of a sequence of pulses and / or oscillations. The vibrating plate can vibrate along a vertical axis orthogonal to the work surface and / or in a horizontal plane parallel to the work surface and / or about a vertical axis of rotation through a vertical axis of symmetry of the vibrating plate. The amplitude of the mechanical vibrations can be constant or vary over time. A maximum amplitude of the vibrations of the vibrating plate can be in the range of 10 nm to 100 µm. The frequency of the pulses and / or oscillations can be constant or vary over time. A maximum frequency of the vibrations of the vibrating plate can be in the range of 1 Hz to 100 kHz.

[0048] By applying mechanical vibrations during or after the cooling period, a continuous crack surface can develop across the entire cross-section of the semiconductor substrate, even at higher temperatures and lower thermomechanical stresses than without vibrations.

[0049] Another example from the present disclosure relates to a substrate division device. The substrate division device comprises a main cooling plate and a vibration excitation source. The main cooling plate comprises a main cooling surface and is configured to bring the main cooling surface into direct contact with a solid substrate assembly during a cooling period. The vibration excitation source is configured to excite vibrations of the main cooling plate along at least one spatial axis during the cooling period.

[0050] For example, the vibration excitation source can be configured to excite vibrations of the main cooling plate along a vertical axis orthogonal to the main cooling surface.

[0051] For example, the vibration excitation source can include one or more piezo actuators attached to the main cooling plate.

[0052] For example, at least one of the piezo actuators can be attached to the main cooling plate on one side opposite the main cooling surface.

[0053] According to one example, the substrate dividing device may further comprise a suspension unit configured to suspend the main cooling plate, wherein the vibration excitation source is partially or completely integrated into the suspension unit; or a support unit configured to support the main cooling plate, wherein the vibration excitation source is partially or completely integrated into the support unit.

[0054] According to one example, the substrate dividing device may further include a counter plate comprising a clamping surface opposite the main cooling surface of the main cooling plate, wherein the main cooling plate and the counter plate are configured to clamp the solid substrate assembly between the main cooling surface and the clamping surface during a cooling period.

[0055] According to one example, at least one of the main cooling plate and the counter plate can be movable along a vertical axis orthogonal to the main cooling surface.

[0056] For example, the counter plate can be configured as an auxiliary cooling plate.

[0057] Another example from the present disclosure relates to a further substrate dividing device. The substrate dividing device may comprise a main cooling plate and a vibrating plate. The main cooling plate comprises a main cooling surface and may be configured to bring the main cooling surface into direct contact with a solid substrate assembly for a cooling period. The vibrating plate comprises an auxiliary surface opposite the main cooling surface of the main cooling plate. The main cooling plate and the vibrating plate may be configured to clamp the solid substrate assembly between the main cooling surface and the auxiliary surface during the cooling period. The vibrating plate may further be configured to excite vibrations of the solid substrate assembly along at least one spatial axis during and / or after the cooling period.

[0058] Fig. Figures 1A to 1D show successive phases of a process for dividing a semiconductor substrate 110. A separating layer 115 is formed in the semiconductor substrate 110 by laser irradiation.

[0059] Fig. Figure 1A shows a semiconductor substrate 110, which may be made of single-crystal silicon carbide (SiC). The semiconductor substrate 110 has the shape of a cylinder with an approximately planar first surface 111 at one end of the cylinder and an approximately planar second surface 112 at the opposite end. The first surface 111 and the second surface 112 are oriented approximately parallel to each other. The base of the cylinder is a complete circle, a circle with a notch, or flat. For example, the semiconductor substrate 110 is a SiC wafer or a SiC puck.

[0060] The laser radiation enters the semiconductor substrate 110 through the first surface 111 and is focused to a predefined distance from the first surface 111. The focused laser radiation locally heats a focal point region in the semiconductor substrate 110 around the focal point, causing the silicon carbide crystal in the focal point region to decompose. The decomposition products in the focal point region form a modified region 117 containing amorphous silicon and amorphous carbon. The high-temperature decomposition exerts high pressure on the portion of the silicon carbide crystal surrounding the focal point region. This pressure induces subcritical cracks in the portion surrounding the modified region 117. The laser radiation is controlled such that several modified regions 117 are formed adjacent to each other and at the same distance from the first surface 111.The modified areas 117 and the subcritical cracks that form on or next to the modified areas 117 constitute the separation layer 115.

[0061] The interface 115 defines a first substrate section 114 essentially between the first surface 111 and the interface 115, and a second substrate section 116 essentially between the interface 115 and the second surface 112. Both the first substrate section 114 and the second substrate section 116 comprise portions of the interface 115. The first substrate section 114 and the second substrate section 116 essentially complement each other to form the semiconductor substrate 110.

[0062] An auxiliary layer 120 is placed directly onto the first surface 111. A joining process provides a strong mechanical bond between the auxiliary layer 120 and the semiconductor substrate 110. The joining process can involve pressing the auxiliary layer 120 and the semiconductor substrate 110 against each other, heat treatment, or a combination of both.

[0063] Fig. Figure 1B shows the auxiliary layer 120, which is bonded to the first surface 111 of the semiconductor substrate 110. The bonding process can lead to the formation of chemical bonds between the semiconductor substrate 110 and the auxiliary layer 120. The auxiliary layer 120 is based on PDMS, which contains a filler for high thermal conductivity. The CTE of the auxiliary layer 120 is at least 30 or 50 times higher than the CTE of the semiconductor substrate 110. The auxiliary layer 120 and the semiconductor substrate 110 form a solid substrate composite 100.

[0064] The solid substrate assembly 100 is placed directly on a main cooling surface 211 of a main cooling plate 210 in a support configuration.

[0065] In Fig. In 1C, the main cooling plate 210 comprises a first main plate section 214 with the main cooling surface 211 and a second main plate section 216, wherein the first main plate section 214 and the second main plate section 216 have the same lateral dimensions and are in direct contact with each other along a planar interface. Each of the plate sections 214, 216 comprises a main part formed of copper Cu or a copper alloy. The main cooling plate 210 weighs more than 1 kg, e.g., more than 5 kg or 10 kg. The main cooling surface 211 and another part of the surface of the first main plate section 214 may be coated with diamond-like carbon (DLC). The main cooling surface 211 is oriented upwards and in a plane orthogonal to the direction of gravity. A main plate coolant channel 215 is formed along the interface between the plate sections 214, 216.The main plate coolant channel 215 can form a flat, horizontal spiral channel connecting a vertical main plate coolant supply channel 218 and a vertical main plate coolant discharge channel 219. The vertical main plate coolant supply channel 218 and the vertical main plate coolant discharge channel 219 pass through the second main plate section 216. One or more column-like support structures (not shown) support and stabilize the main cooling plate 210 in a process chamber.

[0066] The solid substrate assembly 100 is positioned with the second surface 112 of the semiconductor section 110 oriented towards the main cooling surface 211. Positioning takes place at an ambient temperature TA of approximately 20° Celsius. The solid substrate assembly 100 can then be clamped between the main cooling surface 211 and a substrate holder, e.g., between the main cooling surface 211 and a clamping surface of a counter plate (not shown).

[0067] Liquid nitrogen (N2) is supplied through the main plate coolant supply channel 218 into the main plate coolant channel 215. The liquid nitrogen (N2) cools the main cooling plate 210 and the solid substrate assembly 110 with the auxiliary layer 120 and the semiconductor substrate 110. Gaseous N2 exits the main plate coolant channel 215 through the main plate coolant discharge channel 219. Mechanical vibrations are applied directly to the main cooling plate 210 simultaneously when the solid substrate assembly 110 is actively cooled and liquid nitrogen (N2) flows through the main plate coolant channel 215 after the auxiliary layer 120 has reached a predetermined temperature or after the flow of liquid nitrogen ceases.

[0068] Fig. Figure 1D shows the vibrating main cooling plate 210. The arrows indicate possible directions of movement for the vibrating main cooling plate 210. The vibration can move the main cooling plate 210 along a vertical direction parallel to the direction of gravity, in a horizontal plane orthogonal to the vertical direction, and / or around a vertical axis of symmetry of the main cooling plate 210. The amplitude of the mechanical vibrations can be constant or vary over time. A maximum amplitude of the vibrations of the main cooling plate 210 can be in the range of 10 nm to 100 µm. The frequency of the pulses and / or oscillations can be constant or vary over time. A maximum frequency of the vibrations of the main cooling plate 210 can be in the range of 1 Hz to 100 kHz.

[0069] The comparatively high difference in CTE, combined with the strong bond between the semiconductor substrate 110 and the auxiliary layer 120, generates high thermomechanical stresses in both the auxiliary layer 120 and the semiconductor substrate 110. The subcritical cracks that form during the formation of the interface 115 in the semiconductor substrate 110 can propagate along principal crystal planes. Mechanical vibrations promote crack propagation by further straining the interface 115. A continuous crack surface can develop across the entire cross-section of the semiconductor substrate 110, even at higher temperatures and lower thermomechanical stresses than would occur without vibrations. The first substrate section 112 reliably detaches from the second substrate section 114, even for a small thickness of the semiconductor substrate 110 of less than 2 mm, e.g., less than 1.5 mm.The separation can take place at a temperature lower than the glass transition temperature Tg of the auxiliary layer 120.

[0070] Fig. Figures 2A to 2B show successive phases of a method for dividing a semiconductor substrate 110 using a substrate dividing device 200 comprising a counter plate 270 in support configuration and a main cooling plate 210 in suspension configuration.

[0071] The counter plate 270 comprises a clamping surface 271 oriented against the direction of gravity. The clamping surface 271 can be planar or can include a recess corresponding to the horizontal dimensions of the solid substrate assembly 100. A feeding device can place the solid substrate assembly 100 onto the clamping surface 271 when the counter plate 270 and the main cooling plate 210 are fixed at a loading distance from each other that is greater than the vertical extent of the solid substrate assembly 100.

[0072] Fig. Figure 2A shows the substrate dividing device 200 in the loading configuration, with the main cooling plate 210 positioned directly above the counter plate 270, and the main cooling surface 211 of the main cooling plate 210 and the clamping surface 271 of the counter plate 270 having the loading distance. The solid substrate assembly 100 is placed on the clamping surface 271. The counter plate 270 can be configured as an auxiliary cooling plate, a vibrating plate, a plate combining cooling and vibration functions, or a simple holder.

[0073] The counter plate 270 is moved upwards along the vertical direction and / or the main cooling plate 210 is lowered along the vertical direction until the solid substrate assembly 100 is clamped between the main cooling surface 211 and the clamping surface 271. The main cooling plate 210 is cooled and mechanically excited to vibrate.

[0074] Fig. Figure 2B shows the substrate dividing device 200 in a working configuration with solid-state contacts between the main cooling plate 210 and the solid substrate composite 100, and between the counter plate 270 and the solid substrate composite 100. The main cooling plate 210 cools the solid substrate composite 100 and vibrates simultaneously. Alternatively, the main cooling plate 210 can alternately vibrate and further cool the solid substrate composite 100, and / or can vibrate after the solid substrate composite 100 has cooled to a target temperature, which may be lower than the glass transition temperature of the auxiliary layer 120.

[0075] In Fig. 3. The solid substrate assembly 100 comprises a first additional layer, film, or foil 130 formed on a surface of the auxiliary layer 120 facing the semiconductor substrate 110. The first additional layer, film, or foil 130 can be homogeneous or can comprise two or more sublayers, with at least two of the sublayers having different material configurations, e.g., different compositions. The counter plate 270 and the first additional layer, film, or foil 130 form a solid-state contact. The first additional layer, film, or foil 130 can be or comprise a dicing band.

[0076] In addition, the solid substrate assembly 100 comprises a second additional layer, film, or foil 140 formed on the second surface 112 of the semiconductor substrate 110. The second additional layer, film, or foil 140 can be homogeneous or can comprise two or more sublayers, with at least two of the sublayers having different material configurations, e.g., different compositions. The thermal conductivity of the second additional layer, film, or foil 140 is of the same order of magnitude as, or higher than, the thermal conductivity of the semiconductor substrate 110. The main cooling plate 210 and the second additional layer, film, or foil 140 form a solid-state contact. The second additional layer, film, or foil 140 can be or include a protective band.

[0077] In other examples, the solid substrate composite 100 comprises only one of the first additional layer, film or foil 130 and the second additional layer, film or foil 140.

[0078] The substrate division device 200 comprises a vibration excitation source with several piezo actuators 310 (e.g., two or more) mounted on one side of the main cooling plate 210 opposite the counter plate 270. Each piezo actuator 310 comprises a housing 312 attached to the second main plate section 216, a piezoelectric element 314 which contracts and expands in the housing 312 along the vertical direction in response to a varying electrical control voltage, and a piston 316 which converts the contraction / expansion of the piezoelectric element 314 into a vertical force acting on the main cooling plate 210.

[0079] Fig. Figure 4A shows a substrate dividing device 200 comprising a main cooling plate 210 in a suspension configuration and an auxiliary cooling plate 220 in a support configuration. The main cooling plate 210 can have any of the configurations described above. Additionally, a coating 217, e.g., a DLC coating, can cover the main cooling surface 211 and the outer surface of the first main plate section 214. The auxiliary cooling plate 220 can have a similar configuration to the main cooling plate 210.

[0080] The auxiliary cooling plate 220 comprises a first auxiliary plate section 224, which provides an auxiliary cooling surface 221, and a second auxiliary plate section 226, wherein the first auxiliary plate section 224 and the second auxiliary plate section 226 have the same lateral dimensions and are in direct contact with each other along a planar interface. Each of the plate sections 224, 226 comprises a main part formed of copper Cu or a copper alloy. The auxiliary cooling surface 221 is directed upwards and oriented in a plane orthogonal to the direction of gravity. An auxiliary plate coolant channel 225 is formed along the interface between the plate sections 224, 226. The auxiliary plate coolant channel 225 can form a flat, horizontal spiral channel connecting a vertical auxiliary plate coolant supply channel 228 and a vertical auxiliary plate coolant discharge channel 229.The vertical auxiliary plate coolant supply channel 228 and the vertical auxiliary plate coolant discharge channel 229 run through the second auxiliary plate section 226. One or more column-like support structures (not shown) support and stabilize the auxiliary cooling plate 220 in a process chamber. Auxiliary actuators 320, mounted on the side of the auxiliary cooling plate 220 opposite the main cooling plate 210, are configured to excite vibrations of the auxiliary cooling plate 220 along the vertical direction. The auxiliary actuators can be, for example, electromechanical actuators or piezoelectric actuators.

[0081] The solid substrate assembly 100 comprises a first additional layer, film, or foil 130 configured as a dicing band stretched within a polygonal or circular frame 135. A handling unit can use the frame 135 to load the substrate dividing device 200 with the solid substrate assembly 100, the handling unit positioning the frame 135 such that the first additional layer, film, or foil 130 rests on the auxiliary cooling plate 220, as shown in Fig. 4A is shown.

[0082] The main cooling plate 210 moves downwards, so that the weight of the main cooling plate 210 acts on the solid substrate assembly 100 between the main cooling surface 211 and the auxiliary cooling surface 221 for a Fig. The working configuration shown in 4B is jammed.

[0083] The main cooling plate 210 is in direct solid-state contact with the semiconductor substrate 110. The auxiliary cooling plate 220 is in direct solid-state contact with the first additional layer, film or foil 130.

[0084] During the cooling period, a coolant, e.g., liquid nitrogen N2, is supplied to the coolant channels 215, 225 in response to a control signal received from a control unit. The coolant flow can begin before the cooling period, simultaneously with the cooling period, or after the start of the cooling period. The coolant flow can also end before the end of the cooling period, simultaneously with the cooling period, or after the cooling period. The coolant flow through the coolant channels 215, 225 can be constant or vary over time. The piezoelectric actuators 310 excite vibrations of the main cooling plate 210 along the vertical direction. The auxiliary actuators 320 excite vibrations of the auxiliary cooling plate 220 along the vertical direction. The piezoelectric actuators 310 and the auxiliary actuators 320 can operate in phase or out of phase during the cooling period.

[0085] Fig. Figure 5 shows the working configuration of another substrate dividing device 200. The main cooling plate 210 can be configured as a vibration-free unit that is movable along the vertical axis to clamp and release a solid substrate assembly 100 and is fixed in a resting position, particularly during the cooling period. The solid substrate assembly 100 is clamped between the main cooling surface 211 of the main cooling plate 210 and an auxiliary surface 261 of a vibrating plate 260. The main cooling plate 210 is cooled during the cooling period. The vibrating plate 260 applies mechanical vibrations to the solid substrate assembly 100 during and / or after the cooling period until the first substrate section 112 is split off from the second substrate section 114.

[0086] According to another example, the main cooling plate 210 has one of the configurations described above, and vibrations of the main cooling plate 210 and mechanical vibrations generated by the vibrating plate 260 act in combination on the solid substrate composite 100.

[0087] Fig. Figure 6 shows a substrate dividing device 200 with a main cooling plate 210 in a suspension configuration. The main cooling plate 210 comprises a main cooling surface 211, which is directed downwards. The substrate dividing device 200 further comprises a substrate holder 250, which is positioned below the main cooling surface 211. The substrate holder 250 is configured to fix a solid substrate assembly as described above. The substrate dividing device 200 is configured to move at least one of the main cooling plate 210 and the substrate holder 250 along a vertical direction, so that the main cooling surface 211 is pressed against the solid substrate assembly.

[0088] The main cooling plate 210 has a first main plate section 214, a second main plate section 216, a main plate coolant channel 215, a main plate coolant supply channel 218 and a main plate coolant discharge channel 219 as described above, e.g. with reference to Fig. 1C, on. A multi-part vibration excitation source 300, mounted on the main cooling plate 210, is configured to directly excite vibrations of the main cooling plate 210 along the vertical direction, in the horizontal plane, and / or about a vertical axis. The vibration excitation source 300 can include electromagnetic actuators and / or piezo actuators. The substrate holder 250 can support the solid substrate assembly from the bottom and / or from the lateral side.

[0089] In Fig. In Figure 7, the main cooling plate 210 is located in a support configuration. The main cooling surface 211 is oriented upwards. The substrate holder 250 is positioned above the main cooling surface 211. A multi-part vibration excitation source 300 is integrated into a support unit 290, which supports the main cooling plate 210. In another example, the multi-part vibration excitation source 300 is mounted outside the support unit 290.

[0090] In Fig. In Figure 8, the substrate holder is configured as a flat counter plate 270 with a planar clamping surface 271 facing upwards. The material of the counter plate 270 has a thermal conductivity that is at least one order of magnitude lower than the thermal conductivity of the main parts of the main cooling plate 210. The vibration excitation source comprises piezoelectric actuators 310, which are attached to the main cooling plate 210 on one side opposite the counter plate 270. At least one of the main cooling plate 210 and the counter plate 270 is movable along the vertical direction, so that in a working configuration a rigid substrate assembly can be clamped between the main cooling surface 211 and the clamping surface 271 for a cooling period.

[0091] In Fig. 9 the piezo actuators 310 are integrated into suspension units 280, on which the main cooling plate 210 hangs.

[0092] Fig. 10 and Fig. Figure 11 shows substrate dividing devices 200, the counter plates of which are configured as auxiliary cooling plates 220. Each auxiliary cooling plate 220 comprises a first auxiliary plate section 224, a second auxiliary plate section 226, a main plate coolant channel 225, an auxiliary plate coolant supply channel 228, and an auxiliary plate coolant discharge channel 229 as described above, e.g., with reference to Fig. 4A.

[0093] In Fig. 10 The auxiliary cooling plate 220 is not directly excited to vibrations, but can be indirectly excited to vibrations by the vibrating main cooling plate 210 via the clamped solid substrate assembly.

[0094] In Fig. In 11, auxiliary actuators 320 are mounted on the auxiliary cooling plate 220 to directly excite vibrations of the auxiliary cooling plate 220. In another example, the auxiliary actuators 320 can be integrated into a support structure for the auxiliary cooling plate 220, similar to the example shown in Fig. Figure 7 shows a multi-part vibration excitation source 300 that is integrated into the support unit for the main cooling plate 210.

[0095] Fig.Figure 12 shows a substrate dividing device 200 with a main cooling plate 210, which is not directly excited to vibration, and a vibrating plate 260. At least one of the main cooling plate 210 and the vibrating plate 260 is movable along the vertical direction to clamp and release a solid substrate assembly between the main cooling surface 211 of the main cooling plate 210 and an auxiliary surface 261 of the vibrating plate 260. The main cooling plate 210 is coolable. The vibrating plate 260 rests on a vibrating column 265. The vibrating column 265 is configured to apply mechanical vibrations to the vibrating plate 260 during and / or after the cooling period. The vibrating column 265 can excite vibrations of the vibrating plate and the clamped solid semiconductor assembly along the vertical direction, in the horizontal plane and / or around a vertical axis of the vibrating column 265.

[0096] Although the illustrated examples show substrate dividing devices aligned along a vertical direction parallel to the direction of gravity, other examples include substrate dividing devices aligned along a direction inclined to the vertical direction, e.g., in the horizontal plane.

[0097] The embodiments of the independent claims share the features of cooling and vibrating a solid substrate composite simultaneously or at least in close temporal relation and without tool changes.

[0098] Although specific examples have been illustrated and described herein, the person skilled in the art will recognize that a multitude of alternative and / or equivalent implementations can replace the specific examples shown and described without altering the scope of the present invention. This application is intended to cover any adaptations or variations of the specific examples discussed herein. Therefore, it is intended that this invention is limited only by the claims and their equivalents.

[0099] It should be noted that the methods and devices, including their preferred embodiments, as set forth in this document, can be used alone or in combination with the other methods and devices disclosed herein. Furthermore, features set forth in the context of a device are also applicable to a corresponding method, and vice versa. Moreover, all aspects of the methods and devices set forth in this document can be combined in any way. In particular, the features of the claims can be combined with one another in any manner.

[0100] It should be noted that the description and drawings merely illustrate the principles of the proposed methods and systems. A person skilled in the art will be able to implement various arrangements which, although not expressly described or shown herein, embody the principles of the invention and are contained within its spirit and scope. Furthermore, all examples and embodiments set forth in this document are expressly intended primarily for illustrative purposes only, to assist the reader in understanding the principles of the proposed methods and systems. Moreover, all statements herein that provide principles, aspects, and embodiments of the invention, as well as specific examples thereof, are intended to include equivalents thereof.

Claims

[1] Method for dividing a semiconductor substrate, comprising: Forming a separating layer (115) in a semiconductor substrate (110), wherein the semiconductor substrate (110) comprises a first substrate section (114) between a first surface (111) and the separating layer (115) and a second substrate section (116) between the separating layer (115) and a second surface (112) opposite the first surface (111); Forming an auxiliary layer (120) on the first surface (111), wherein the auxiliary layer (120) and the semiconductor substrate (110) have different coefficients of thermal expansion; Contacting a main cooling plate (210) with a solid substrate assembly (100) comprising the semiconductor substrate (110) and the auxiliary layer (120) during a cooling period; Cooling the main cooling plate (210) during the cooling period, whereby the auxiliary layer (120) is cooled; and Applying mechanical vibrations directly to the main cooling plate (210) during the cooling period, splitting off the first substrate section (114) from the second substrate section (116). [2] Method according to the preceding claim, wherein the auxiliary layer (120) comprises a material having a glass transition at a glass transition temperature, and the auxiliary layer (120) is cooled to a temperature below the glass transition temperature. [3] Method according to any of the preceding claims, wherein the separating layer (115) is formed by locally modifying a composition and / or structure of the semiconductor substrate (110). [4] Method according to one of the preceding claims, wherein the main cooling plate (210) is brought into direct contact with the auxiliary layer (120) or the semiconductor substrate (110). [5] Method according to one of the preceding claims, wherein the mechanical vibrations are applied to one side of the main cooling plate (210) relative to the solid substrate composite (100). [6] Method according to any of the preceding claims, wherein the mechanical vibrations are generated by one or more vibration excitation sources (300) attached to the main cooling plate (210). [7] Method according to any of the preceding claims, wherein the mechanical vibrations are generated after the auxiliary layer (120) has reached the target temperature. [8] Method according to any one of the preceding claims, further comprising: Bringing an auxiliary cooling plate (220) into contact with one side of the solid substrate composite (100) opposite the main cooling plate (210) and cooling the auxiliary cooling plate (220). [9] Method according to the preceding claim, further comprising: Applying mechanical vibrations directly to the auxiliary cooling plate (220) during and / or after the cooling period, at least until the first substrate section (114) is separated from the second substrate section (116). [10] Method for dividing a semiconductor substrate, comprising: Forming a separating layer (115) in a semiconductor substrate (110), wherein the semiconductor substrate (110) comprises a first substrate section (114) between a first surface (111) and the separating layer (115) and a second substrate section (116) between the separating layer (115) and a second surface (112) opposite the first surface (111); Forming an auxiliary layer (120) on the first surface (111), wherein the auxiliary layer (120) and the semiconductor substrate (110) have different coefficients of thermal expansion; Contacting a main cooling plate (210) with a solid substrate assembly (100) comprising the semiconductor substrate (110) and the auxiliary layer (120) during a cooling period; Bringing a vibrating plate (260) into contact with the solid substrate assembly (100) on one side opposite the main cooling plate (210); Cooling the main cooling plate (210) during the cooling period, whereby the auxiliary layer (120) is cooled; and Applying mechanical vibrations to the solid substrate composite (100) using the vibrating plate (260) during and / or after the cooling period, splitting the first substrate section (114) from the second substrate section (116). [11] Substrate division device comprising: a main cooling plate (210) comprising a main cooling surface (211), wherein the main cooling plate (210) is configured to bring the main cooling surface (211) into direct contact with a solid substrate composite (100) during a cooling period; and a vibration excitation source (300) configured to excite vibrations of the main cooling plate (210) along at least one spatial axis during the cooling period. [12] Substrate dividing device according to the preceding claim, wherein the vibration excitation source (300) is configured to excite vibrations of the main cooling plate (210) along a vertical axis orthogonal to the main cooling surface (211). [13] Substrate dividing device according to one of the two preceding claims, wherein the vibration excitation source (300) comprises one or more piezo actuators (310) attached to the main cooling plate (210). [14] Substrate dividing device according to the preceding claim, wherein at least one of the piezo actuators (310) is attached to the main cooling plate (210) on one side opposite the main cooling surface (211). [15] Substrate dividing device according to any one of the four preceding claims, further comprising: a suspension unit (280) configured to suspend the main cooling plate (210), wherein the vibration excitation source (300) is partially or completely integrated into the suspension unit (280); or a support unit (290) configured to support the main cooling plate (210), wherein the vibration excitation source (300) is partially or completely integrated into the support unit (290). [16] Substrate dividing device according to any one of the five preceding claims, further comprising: a counter plate (270) comprising a clamping surface (271) opposite the main cooling surface (211) of the main cooling plate (210), wherein the main cooling plate (210) and the counter plate (270) are configured to clamp the solid substrate assembly (100) between the main cooling surface (211) and the clamping surface (271) during a cooling period. [17] Substrate dividing device according to the preceding claim, wherein at least one of the main cooling plate (210) and the counter plate (270) is movable along a vertical axis orthogonal to the main cooling surface (211). [18] Substrate dividing device according to one of the two preceding claims, wherein the counter plate (270) is configured as an auxiliary cooling plate (220). [19] Substrate division device comprising: a main cooling plate (210) comprising a main cooling surface (211), wherein the main cooling plate (210) is configured to bring the main cooling surface (211) into direct contact with a solid substrate composite (100) during a cooling period; a vibrating plate (260) comprising an auxiliary surface (261) opposite the main cooling surface (211) of the main cooling plate (210), wherein the main cooling plate (210) and the vibrating plate (260) are configured to clamp the solid substrate assembly (100) between the main cooling surface (211) and the auxiliary surface (261) during a cooling period, and wherein the vibrating plate (260) is configured to excite vibrations of the solid substrate assembly (100) along at least one spatial axis during and / or after the cooling period.

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