METHOD FOR EVALUATING AND PRODUCING SILICON WAFERS

Abstract

A method for evaluating a silicon wafer cut from a silicon single crystal ingot grown by a CZ method, comprising Measuring a generation rate of thermal donors generated when a thermal donor generation heat treatment is applied to the silicon wafer, and Determining the presence / absence of a crystal defect region or the type of a crystal defect based on the measured generation rate of thermal donors, wherein measuring a generation rate of thermal donors includes: Calculating a first thermal donor generation rate, which is the generation rate of the thermal donors generated at a first measurement point on a first silicon wafer cut from the silicon single-crystal ingot when the thermal donor generation heat treatment is applied in a state where the first silicon wafer contains oxygen clusters, Calculating a second generation rate of thermal donors, which is the generation rate of the thermal donors generated at a second measurement point on a second silicon wafer different from the first silicon wafer cut from the silicon single crystal ingot when a donor removal treatment and the thermal donor generation heat treatment are applied sequentially, and wherein Determining the presence / absence of a crystal defect region or the type of crystal defect includes: Determining, based on a thermal donor generation rate ratio, which is a ratio of the first thermal donor generation rate to the second thermal donor generation rate, which region, selected from a region with OSF nuclei, a region with vacancy defects, and a defect-free region, the first measurement point corresponds to.