Substrate processing system, and method for forming and removing protective layer

Abstract

To provide a substrate processing system and a method for forming and removing a protective layer such that a metallic area of a substrate can be protected from oxidation.SOLUTION: A method for forming and removing a protective layer according to the present disclosure is a method for forming and removing the protective layer and has a step for forming the protective film on the surface of a substrate using a chemical solution, and a step for removing the protective film by irradiating the protective film with ultraviolet light.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a substrate processing system and a method for forming and removing a protective layer. [Background technology]

[0002] In the field of electronics, techniques for bonding semiconductor substrates are used. For example, Patent Document 1 discloses a technique for bonding such semiconductor substrates as Wafer on Wafer (WoW), which stacks multiple wafers.

[0003] The method of bonding substrates having bonding surfaces with metal regions disclosed in Patent Document 1 includes the steps of polishing the bonding surfaces having metal regions, performing a surface activation treatment and a hydrophilization treatment on the polished bonding surfaces, bonding the bonding surfaces of the substrates together to form a substrate bonded body, and heating the substrate bonded body to cause solid-state diffusion of the metal. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Patent No. 6425317 [Patent Document 2] US2022 / 0139869A1 [Patent Document 3] JP 2000-340539 A [Patent Document 4] JP 2009-239288 A Summary of the Invention [Problem to be solved by the invention]

[0005] As described above, the method for bonding substrates in Patent Document 1 includes a polishing step (a polishing step) and a bonding step (a step of performing a surface activation treatment and a hydrophilization treatment followed by a step of diffusing a metal into a solid phase). When bonding substrates, the substrates after the polishing step may be temporarily stored as necessary. In such a case, if the time between the polishing step and the bonding step is long, the metal region may react with oxygen in the air, and an oxide film may be formed on the surface of the metal region. If an oxide film is formed on the surface of the metal region, problems such as poor contact may occur in the connection between the metal regions between the two substrates to be bonded. For this reason, there is a demand for an apparatus and method that can protect the surface of the metal region after the polishing step from oxidation.

[0006] Therefore, an object of the present disclosure is to provide a substrate processing system and a method for forming and removing a protective layer that can protect the surface of a substrate. [Means for solving the problem]

[0007] A substrate processing system according to the present disclosure is a substrate processing system including a protective film forming device for forming a protective film on a surface of a substrate using a chemical solution, and a protective film removal device for removing the protective film by irradiating the protective film with ultraviolet light.

[0008] A method for forming and removing a protective layer according to the present disclosure includes a step of forming a protective film on a surface of a substrate using a chemical solution, and a step of removing the protective film by irradiating the protective film with ultraviolet light. [Brief description of the drawings]

[0009] [Figure 1] FIG. 1 is a plan view showing an overall configuration of a substrate processing system according to an embodiment of the present disclosure. [Diagram 2] FIG. 2 is a perspective view diagrammatically illustrating the polishing apparatus shown in FIG. [Diagram 3] FIG. 3 is a perspective view that diagrammatically illustrates the cleaning device shown in FIG. [Figure 4A] FIG. 4A is a diagram showing a schematic configuration of the coating apparatus shown in FIG. [Figure 4B] FIG. 4B is a cross-sectional view taken along line AA of FIG. 4A. [Figure 5A] FIG. 5A is a diagram showing a schematic configuration of a coating apparatus different from the coating apparatus in FIG. 4A. [Figure 5B] FIG. 5B is a cross-sectional view taken along line AA of FIG. 5A. [Figure 6] FIG. 6 is a diagram showing a schematic configuration of the baking apparatus shown in FIG. [Figure 7] FIG. 7 is a diagram showing a schematic configuration of the back grinding device shown in FIG. [Figure 8] FIG. 8 is a diagram showing a schematic configuration of the measurement device shown in FIG. [Figure 9] FIG. 9 is a diagram showing a schematic configuration of the protective film removing apparatus shown in FIG. [Figure 10A] FIG. 10A is a cross-sectional view showing a cross section of a substrate after being polished by a polishing apparatus. [Figure 10B] FIG. 10B is a cross-sectional view of a substrate having metal areas flat against the surrounding silicon dioxide. [Figure 10C] FIG. 10C is a cross-sectional view of a substrate having a metal region that is convex relative to the surrounding silicon dioxide. [Figure 11] FIG. 11 is a diagram showing a schematic configuration of the joining apparatus shown in FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In the drawings described below, the same or corresponding components are designated by the same reference numerals, and duplicated description will be omitted.

[0011] <Substrate Processing System 100> FIG. 1 is a plan view showing an overall configuration of a substrate processing system 100 according to an embodiment of the present disclosure. The substrate processing system 100 is an apparatus for performing processing on a substrate W. In particular, the substrate processing system 100 performs processing on a substrate W having an insulating region 904 and a metal region 902 on its surface (see FIGS. 10A to 10C), but may also perform processing on a substrate W having only the insulating region 904. Here, the insulating region 904 is a region made of silicon dioxide (SiO2) 904. The metal region 902 is a region of copper (Cu) or the like formed on the surface of the substrate W by a deposition method such as plating or vapor deposition. The substrate W may include a wafer such as a silicon wafer, a glass wafer, or a quartz wafer.

[0012] 1, the substrate processing system 100 includes, as an example, a first polishing apparatus 300A, a second polishing apparatus 300B, a cleaning apparatus 400, a protective film forming apparatus 500, a back grinding apparatus 600, a dicing apparatus 650, a measuring apparatus 700, a protective film removing apparatus 750, a bonding apparatus 800, and a control apparatus 200. The control apparatus 200 is configured to control the first polishing apparatus 300A, the second polishing apparatus 300B, the cleaning apparatus 400, the protective film forming apparatus 500, the back grinding apparatus 600, the dicing apparatus 650, the measuring apparatus 700, the protective film removing apparatus 750, and the bonding apparatus 800. Each apparatus included in the substrate processing system 100 will be described below. In another embodiment of the present disclosure, the substrate processing system 100 does not need to include all of the first polishing apparatus 300A, the second polishing apparatus 300B, the cleaning apparatus 400, the protective film forming apparatus 500, the back grinding apparatus 600, the dicing apparatus 650, the measuring apparatus 700, the protective film removing apparatus 750, the bonding apparatus 800, and the control apparatus 200. The substrate processing system 100 may include only necessary apparatuses from among these apparatuses as necessary.

[0013] <Polishing equipment 300> The first polishing apparatus 300A and the second polishing apparatus 300B are apparatuses for polishing the substrate W. The substrate processing system 100 polishes the substrate W in two stages by using the first polishing apparatus 300A and the second polishing apparatus 300B. As a result, the substrate processing system 100 can flatten the surface of the substrate W more than when the substrate W is polished in one stage. Since the polishing apparatuses 300A and 300B have the same configuration, they may be simply referred to as the polishing apparatuses 300. In the following, the polishing apparatuses 300 will be described as the first polishing apparatus 300A and the second polishing apparatus 300B in order to avoid duplication of explanation.

[0014] FIG. 2 is a perspective view showing a polishing apparatus 300. As shown in FIG. 2, the polishing apparatus 300 includes, for example, a polishing pad 310 having a polishing surface, a polishing table 330, a top ring 331, a polishing liquid supply nozzle 332 (see FIG. 2), a dresser (not shown), and an atomizer (not shown). The top ring 331 has a function of holding a substrate W and can press the substrate W against the polishing pad 310. As a result, the substrate W is pressed against the polishing pad 310 and polished. The polishing liquid supply nozzle 332 has a function of supplying a polishing liquid or a dressing liquid (e.g., pure water) to the polishing pad 310. The dresser has a function of dressing the polishing surface of the polishing pad 310. The atomizer has a function of spraying a mixed fluid of a liquid (e.g., pure water) and a gas (e.g., nitrogen gas) or a liquid (e.g., pure water) to remove a slurry, a polishing product, and a pad residue due to dressing on the polishing surface.

[0015] 2, the top ring 331 is supported by a top ring shaft 336. A polishing pad 310 is attached to the upper surface of the polishing table 330. The upper surface of the polishing pad 310 forms a polishing surface for polishing the substrate W. The top ring 331 and the polishing table 330 are configured to be rotatable about their axes as indicated by the arrows. The substrate W is held by vacuum suction on the lower surface of the top ring 331. During polishing, the substrate W to be polished is pressed against the polishing surface of the polishing pad 310 by the top ring 331, and polished, with a polishing liquid being supplied from a polishing liquid supply nozzle 332 to the polishing surface of the polishing pad 310.

[0016] <Cleaning device 400> Fig. 3 is a perspective view showing a schematic diagram of a cleaning apparatus 400. As shown in Fig. 3, the cleaning apparatus 400 includes a buff table 422 on which a substrate W is placed, a buff head 426 having a buff pad 424 attached thereto for processing the surface of the substrate W, an arm 430 for holding the buff head 426, and a processing liquid supply system 470 for supplying a processing liquid. The processing liquid includes at least one of pure water, a cleaning liquid, and a polishing liquid such as a slurry.

[0017] The buff table 422 has a function of adsorbing the substrate W and holds the substrate W. The buff table 422 is configured to be rotatable around a rotation axis A by a motor 432. The buff pad 424 is attached to a surface of the buff head 426 facing the substrate W. The buff head 426 is configured to be rotatable around a rotation axis B by a drive mechanism (not shown). The buff head 426 is also configured to be able to press the buff pad 424 against the surface of the substrate W. The arm 430 is configured to move the buff head 426 in the direction of arrow C.

[0018] The processing liquid supply system 470 includes a pure water nozzle 472 for supplying pure water to the surface of the substrate W. The pure water nozzle 472 is connected to a pure water supply source 476 via a pure water pipe 474. The pure water pipe 474 is provided with an on-off valve 478 that can open and close the pure water pipe 474. The control device 200 can supply pure water to the surface of the substrate W at any timing by controlling the opening and closing of the on-off valve 478.

[0019] The processing liquid supply system 470 also includes a cleaning liquid nozzle 480 for supplying a cleaning liquid to the surface of the substrate W. The cleaning liquid nozzle 480 is connected to a cleaning liquid supply source 483 via a cleaning liquid piping 482. The cleaning liquid piping 482 is provided with an on-off valve 484 that can open and close the cleaning liquid piping 482. The control device 200 can supply the cleaning liquid to the surface of the substrate W at any timing by controlling the opening and closing of the on-off valve 484.

[0020] Furthermore, the cleaning apparatus 400 is configured to selectively supply a polishing liquid, such as pure water, a cleaning liquid, or a slurry, to the surface of the substrate W via the arm 430, the buff head 426, and the buff pad 424.

[0021] That is, a branch pure water pipe 474a branches off from the pure water pipe 474 between the pure water supply source 476 and the on-off valve 478. A branch chemical liquid pipe 482a branches off from the cleaning chemical liquid pipe 482 between the cleaning chemical liquid supply source 483 and the on-off valve 484. The branch pure water pipe 474a, the branch chemical liquid pipe 482a, and the polishing liquid pipe 488 connected to the polishing liquid supply source 486 merge into a liquid supply pipe 490. The branch pure water pipe 474a is provided with an on-off valve 492 capable of opening and closing the branch pure water pipe 474a. The branch chemical liquid pipe 482a is provided with an on-off valve 494 capable of opening and closing the branch chemical liquid pipe 482a. The polishing liquid pipe 488 is provided with an on-off valve 495 capable of opening and closing the polishing liquid pipe 488.

[0022] A first end of the liquid supply pipe 490 is connected to three pipes, namely, a branched pure water pipe 474a, a branched chemical liquid pipe 482a, and a polishing liquid pipe 488. The liquid supply pipe 490 extends through the inside of the arm 430, the center of the buff head 426, and the center of the buff pad 424. A second end of the liquid supply pipe 490 opens toward the surface of the substrate W. The controller 200 controls the opening and closing of an on-off valve 492, an on-off valve 494, and an on-off valve 495, so that any one of pure water, a cleaning liquid, and a polishing liquid such as a slurry, or a mixture of any combination thereof can be supplied to the surface of the substrate W at any timing.

[0023] The cleaning apparatus 400 can clean the substrate W by supplying a processing liquid to the substrate W via a liquid supply pipe 490, rotating a buff table 422 around a rotation axis A, pressing a buff pad 424 against the surface of the substrate W, and swinging a buff head 426 in the direction of arrow C while rotating it around a rotation axis B.

[0024] <Protective film forming device 500> <Coating device 510> Referring to FIG. 1, the protective film forming apparatus 500 includes a coating apparatus 510 and a baking apparatus 580. The protective film forming apparatus 500 has a function of forming a protective film M on the surface of the substrate W using a chemical solution. The configuration of each part of the protective film forming apparatus 500 will be described below. FIG. 4A is a diagram showing a schematic configuration of the coating apparatus 510. FIG. 4B is a cross-sectional view of AA in FIG. 4A. The coating apparatus 510 has a function of coating the substrate W with a chemical solution. Here, the chemical solution includes, for example, a molecular bonding agent, a resist, a resin, and a silane coupling agent. For example, the molecular bonding agent may have a triazine thiol skeleton, and may be 6-(3-triethoxysilylpropylamino)-1,3,5-triazine-2,4-dithiol monosodium salt (TES). The resist may be, for example, a positive photoresist made of a novolac resin and a 1,2-naphthoquinone diazide sulfonic acid ester (NQD)-based compound, or a negative photoresist made of a cyclized rubber and a bisazide compound. The resin may be, for example, a high barrier film. In addition, when the chemical solution is a molecular bonding agent, the molecular bonding agent dissolved in ethanol, which is a solvent, may be used.

[0025] 4A and 4B, the coating device 510 includes, for example, a table 512, an arm 514, a pure water nozzle 518 (see FIG. 4B), and a gas nozzle 520 (see FIG. 4B). The table 512 has a function of adsorbing the substrate W and can hold the substrate W. The table 512 is configured to be rotatable by a motor (not shown). Therefore, the table 512 can rotate the substrate W that it holds. The pure water nozzle 518 is connected to a pure water source (not shown) for supplying pure water. The pure water nozzle 518 is positioned directly above the table 512 while being supported by the arm 514, and sprays pure water toward the substrate W. The gas nozzle 520 is configured to be able to spray water. The gas nozzle 520 is connected to a gas source (not shown) for supplying IPA (isopropyl alcohol) gas. The gas nozzle 520 is positioned directly above the table 512 while being supported by the arm 514, and is configured to be able to spray IPA gas toward the substrate W.

[0026] The arm 514 has, for example, an elongated rectangular parallelepiped shape, and one end of the arm 514 is supported by a shaft 522 located outside the table 512. The arm 514 is configured to be rotatable about the shaft 522. A pure water nozzle 518 and a gas nozzle 520 are provided near the other end of the arm 514. Therefore, by rotating the arm 514 about the shaft 522, the gas nozzle 520 and the pure water nozzle 518 can be moved together in the outer periphery direction of the substrate W such that the gas nozzle 520 follows the pure water nozzle 518.

[0027] The coating apparatus 510 has a function of drying the substrate W in addition to the function of coating the substrate W with a chemical liquid. When the coating apparatus 510 dries the substrate W, the coating apparatus 510 rotates the table 512. While the table 512 is rotating, the coating apparatus 510 causes the pure water nozzle 518 to supply pure water to the substrate W and causes the gas nozzle 520 to supply IPA gas to the substrate W. At this time, the coating apparatus 510 moves the arm 514 toward the outer periphery. That is, the coating apparatus 510 moves the gas nozzle 520 and the pure water nozzle 518 toward the outer periphery of the substrate W so that the gas nozzle 520 follows the pure water nozzle 518. As a result, a Marangoni force, which is a force toward the outer periphery of the substrate W, acts on the liquid on the substrate W, and the liquid on the substrate W is removed. This type of drying is called Rotagoni drying. That is, the coating apparatus 510 can dry the substrate W by Rotagoni drying.

[0028] 4A again, the coating device 510 includes, as an example, a chemical nozzle 516. The chemical nozzle 516 is connected to a chemical source (not shown) for supplying the chemical. The chemical nozzle 516 is located directly above the table 512. The chemical nozzle 516 is configured to be able to supply the chemical toward the substrate W. More specifically, a chemical supply port of the chemical nozzle 516 for supplying the chemical to the substrate W is configured to face the center of the substrate W held on the table 512.

[0029] When the coating device 510 coats the substrate W with a chemical liquid, the coating device 510 rotates the substrate W on the table 512. Then, the coating device 510 causes the chemical liquid nozzle 516 to supply the chemical liquid to the substrate W. As a result, the substrate W is coated with the chemical liquid by spin coating.

[0030] As described above, the coating apparatus 510 has a function of drying the substrate W and a function of applying a chemical solution to the substrate W. However, in another embodiment according to the present disclosure, the coating apparatus 510 may not have a function of drying the substrate W. For example, the coating apparatus 510 may have a table 512 and a chemical solution nozzle 516, without having the arm 514, the pure water nozzle 518, and the gas nozzle 520. Even when the coating apparatus 510 has such a configuration, the coating apparatus 510 can apply a chemical solution to the substrate W. In this case, the substrate processing system 100 may have a known drying apparatus having a function of drying the substrate W, separate from the coating apparatus 510.

[0031] <Coating device 540> Fig. 5A is a diagram showing a schematic configuration of a coating apparatus 540 which is different from the coating apparatus 510. 5B is a cross-sectional view taken along line AA in Fig. 5A. In another embodiment according to the present disclosure, the protective film forming apparatus 500 may include a coating apparatus 540 instead of the coating apparatus 510.

[0032] 5A and 5B, the coating apparatus 510 includes, for example, a table 542, an arm 544, a pure water nozzle 548 (see FIG. 5B), a gas nozzle 550 (see FIG. 5B), and a chemical nozzle 546 (see FIG. 5B). The table 542 has a function of adsorbing the substrate W and can hold the substrate W. The table 542 is configured to be rotatable by a motor (not shown). Therefore, the table 542 can rotate the substrate W that it holds. The pure water nozzle 548 is positioned directly above the table 542 while being supported by the arm 544, and is configured to be able to spray pure water toward the substrate W. The gas nozzle 550 is connected to a gas source (not shown) for supplying IPA gas. The gas nozzle 550 is positioned directly above the table 542 while being supported by the arm 544, and is configured to be able to spray IPA gas toward the substrate W. The chemical nozzle 546 is connected to a chemical source (not shown) for supplying the chemical. The chemical liquid nozzle 546 is positioned directly above the table 542 while being supported by the arm 544, and is configured so as to be able to supply the chemical liquid toward the substrate W.

[0033] The arm 544 has, for example, an elongated rectangular parallelepiped shape, and one end of the arm 544 is supported by a shaft 552 located outside the table 542. The arm 544 is configured to be rotatable about the shaft 552. A pure water nozzle 548, a gas nozzle 550, and a chemical nozzle 546 are provided near the other end of the arm 544. Therefore, by rotating the arm 544 about the shaft 552, the pure water nozzle 548, the gas nozzle 550, and the chemical nozzle 546 can be moved integrally in the outer periphery direction of the substrate W.

[0034] In the coating device 540, the pure water nozzle 548, the gas nozzle 550, and the chemical nozzle 546 are arranged in this order (see FIG. 5B). That is, the coating device 540 can supply the pure water, the IPA gas, and the chemical to the surface of the substrate W in this order by rotating the arm 544.

[0035] As described above, when pure water and IPA gas are supplied in this order to the rotating substrate W, the substrate W is dried by Rotagoni drying. In contrast, the coating apparatus 540 supplies pure water, IPA gas, and the chemical liquid in this order to the rotating substrate W. This allows the coating apparatus 540 to supply the chemical liquid to the substrate W immediately after it has been dried by Rotagoni drying.

[0036] Here, the advantage of being able to supply the chemical solution to the substrate W immediately after it has been dried will be described. When the metal region 902 of the substrate W is dry, oxygen in the air comes into contact with the metal region 902, causing the metal region 902 to oxidize. In the coating apparatus 540, the chemical solution is supplied to the metal region 902 of the substrate W immediately after it has dried. In other words, the time during which the metal region 902 is dry is short, and the amount of oxygen that comes into contact with the metal region 902 is small. As a result, the coating apparatus 540 can prevent the oxidation of the metal region 902.

[0037] As described above, in the coating device 540, the pure water nozzle 548, the gas nozzle 550, and the chemical nozzle 546 are configured to be aligned in this order. However, in another embodiment according to the present disclosure, the coating device 540 does not have to be configured in this manner. The pure water nozzle 548, the gas nozzle 550, and the chemical nozzle 546 may be aligned in the order of the pure water nozzle 548, the chemical nozzle 546, and the gas nozzle 550. Furthermore, the arm 544 of the coating device 540 may support the chemical nozzle 546 and the gas nozzle 550 so as to be aligned in this order, without supporting the pure water nozzle 548.

[0038] <Baker 580> Next, reference is made to FIG. 6. FIG. 6 is a block diagram showing a schematic configuration of a baking device 580. The baker 580 has a function of heating the substrate W. As shown in Fig. 6, the baker 580 includes, for example, a heater chamber 582, a load / unload cooling chamber 584, a heater 586, a heater power supply 588, and a shutter 590.

[0039] The heater chamber 582 and the load / unload cooling chamber 584 are configured to accommodate a plurality of substrates W. The heater 586 is configured to heat the inside of the heater chamber 582 when power is supplied from a heater power supply 588. The shutter 590 is provided in a passage between the heater chamber 582 and the load / unload cooling chamber 584. The heater chamber 582 is configured to be insulated when the shutter 590 is closed.

[0040] In the protective film forming apparatus 500, the substrate W coated with the chemical solution is heated by the baking apparatus 580. At this time, the baking apparatus 580 heats the substrate W to about 100° C. (90° C. to 110° C.), for example. This causes the chemical solution to harden, and a protective film M is formed on the substrate W.

[0041] In another embodiment of the present disclosure, the protective film forming apparatus 500 may include an ultraviolet light irradiation device for irradiating ultraviolet light instead of the baking apparatus 580. Such an ultraviolet light irradiation device irradiates the surface of the substrate W with ultraviolet light to harden the chemical solution. As a result, a protective film M is formed on the substrate W. In addition, whether the protective film forming apparatus 500 includes the baking apparatus 580 or the ultraviolet light irradiation device may be determined depending on the type of chemical solution used by the coating apparatus.

[0042] <Back grinding device 600> Next, reference is made to FIG. 7. FIG. 7 is a diagram showing a schematic configuration of a back grinding apparatus 600. The back grinding apparatus 600 has a function of reducing the thickness of the substrate W. Referring to FIG. 7, the back grinding apparatus 600 includes a grinding table 602 and a table shaft 604. The grinding table 602 has a function of holding the substrate W by, for example, a vacuum chuck. The table shaft 604 supports the grinding table 602 and is connected to a motor (not shown). The table shaft 604 transmits the rotation of the motor to the grinding table 602, and can rotate the substrate W held on the grinding table 602.

[0043] The back grinding device 600 also includes a spindle 606 and a grinding head 608. The spindle 606 supports the grinding head 608 and is connected to a motor (not shown). The spindle 606 can transmit the rotation of the motor to the grinding head 608 to rotate the grinding head 608. The grinding head 608 also has a function of grinding the back surface of the substrate W on which the protective film M is formed. More specifically, the grinding head 608 includes a wheel mount 610 and a grinding wheel 612. The wheel mount 610 is fixed to the tip of the spindle 606 and can detachably support the grinding wheel 612. The grinding wheel 612 is attached to the wheel mount 610 and has a plurality of grindstones 614 on the surface that contacts the substrate W.

[0044] When the backgrinding apparatus 600 grinds the substrate W, a BG tape (backgrinding tape) T is attached onto the protective film M of the substrate W. Next, the substrate W is held on the grinding table 602 so that the BG tape T faces the grinding table 602. Next, the grinding table 602 rotates, thereby rotating the substrate W. Next, the spindle 606 rotates the grinding head 608, and the grinding head 608 is brought into contact with the back surface of the substrate W. As a result, the substrate W is ground, and the thickness of the substrate W is reduced.

[0045] In the substrate processing system 100, the surface of the substrate W is protected by a protective film M during back grinding. Therefore, if the adhesion of the BG tape T to the substrate W is insufficient, Even if a gap occurs between the metal region 902 and the substrate W, the substrate processing system 100 can protect the surface of the substrate W during back-grinding by the protective film M and suppress oxidation of the metal region 902. In addition, the protective film M can protect the surface of the substrate W from chips generated during grinding.

[0046] <Dicing machine 650> As an example, the substrate processing system 100 includes a dicing apparatus 650 for dicing the substrate W thinned by the backgrinding apparatus 600 (see FIG. 1). In the substrate processing system 100, the dicing apparatus 650 can dices the substrate W on which a protective film M is formed. Therefore, the surface of the substrate W is protected by the protective film M during dicing. Note that the substrate processing system 100 does not need to dices the substrate W if it is not necessary to dices the substrate W.

[0047] <Measuring device 700> FIG. 8 is a diagram showing a schematic configuration of the measuring device 700. The measuring device 700 has a function of measuring the shape of the surface of the substrate W. In the substrate processing system 100, the control device 200 is configured to control the protective film forming device 500 and the measuring device 700 so that the measuring device 700 measures the shape of the surface of the substrate W after the protective film forming device 500 forms the protective film M. That is, in the substrate processing system 100, the measuring device 700 measures the shape of the surface of the substrate W on which the protective film M is formed. Referring to FIG. 8, the measuring device 700 includes, as an example, a stage 702 for holding the substrate W and a head 704 for measuring the shape of the surface of the substrate W. The stage 702 is configured to be movable in the horizontal direction while holding the substrate W. More specifically, the stage 702 is configured to be movable along an X-axis extending horizontally and a Y-axis extending horizontally and perpendicular to the X-axis. The measuring device 700 may be a three-dimensional measuring machine, a scanning electron microscope (SEM), or an atomic force microscope (AFM) as long as it can measure the shape of the surface of the substrate W. The measuring device 700 may measure the entire surface of the substrate W, or may measure only a part of the substrate W.

[0048] When the measuring device 700 measures the shape of the surface of the substrate W, if the thickness of the protective film M is relatively thick, there is a risk that the measuring device 700 will not be able to accurately measure the shape of the surface of the substrate W. Therefore, when the measuring device 700 measures the shape of the surface of the substrate W, the above-mentioned protective film forming device 500 forms the protective film M on the surface of the substrate W by using a molecular bonding agent, for example. It is known that the thickness of the protective film M formed by the molecular bonding agent is thin, being no more than a few nanometers. Therefore, even if the protective film M is formed on the surface of the substrate W, the measuring device 700 can measure substantially the same shape as the shape of the surface of the substrate W.

[0049] Furthermore, in the substrate processing system 100, even while the measuring device 700 is performing measurement, the protective film M protects the surface of the substrate W. As a result, oxidation of the metal region 902 of the substrate W during measurement is suppressed.

[0050] <Protective film removal device 750> FIG. 9 is a diagram showing a schematic configuration of a protective film removing device 750. The protective film removing device 750 has a function of removing the protective film M of the substrate W by irradiating the protective film M with ultraviolet light. Referring to FIG. 9, the protective film removing device 750 includes, as an example, a stage 752 for holding the substrate W, a head 754, a light source 756, and a fiber 758. The stage 752 is configured to be movable in the horizontal direction while holding the substrate W. More specifically, the stage 752 is configured to be movable along an X-axis extending horizontally and a Y-axis extending horizontally and perpendicular to the X-axis. The light source 756 is configured to generate ultraviolet light having a wavelength of 400 nm or less. More specifically, the light source 756 emits excimer light. The head 754 is configured to generate ultraviolet light generated by the light source 756. The fiber 758 is configured to transmit the ultraviolet light generated by the light source 756 to the head 754. The head 754 is configured to irradiate ultraviolet light onto a partial region or the entire region (entire surface) of the surface of the substrate W held on the stage 752. The head 754 may be configured to irradiate the substrate W with ultraviolet light so that the surface irradiated with the ultraviolet light has a linear, angular, or round shape.

[0051] When the protective film removal device 750 removes the protective film M, it irradiates ultraviolet light onto the protective film M. When the protective film M is irradiated with ultraviolet light, the lattice in the organic material of the protective film M vibrates, and the organic material evaporates. As a result, the protective film M is removed without leaving any residue of the protective film M.

[0052] Furthermore, in the substrate processing system 100, the control device 200 controls the irradiation conditions of the protective film removal device 750 to create the surface shape of the substrate W. Hereinafter, the creation of the surface shape will be described.

[0053] 10A is a cross-sectional view showing a cross section of a substrate W after being polished by the polishing apparatus 300. As shown in FIG. 10A, it is known that the substrate W polished by the polishing apparatus 300 has a metal region 902 that is concave with respect to the surrounding silicon dioxide 904 due to the characteristics of the polishing apparatus 300. When substrates W having such shapes are bonded together, there is a risk of poor bonding of the metal regions 902 due to a gap between a pair of metal regions 902 in the overlapping substrates W. For this reason, it is preferable that the substrates W to be bonded have a flat metal region 902 with respect to the surrounding silicon dioxide 904 (the state shown in FIG. 10B) or a convex metal region 902 with respect to the surrounding silicon dioxide 904 (the state shown in FIG. 10C).

[0054] In this regard, in the substrate processing system 100, the control device 200 is configured to control at least one of the intensity of the ultraviolet light irradiated by the protective film removal device 750, the position where the ultraviolet light is irradiated, and the irradiation time based on the measurement result of the shape of the surface by the measurement device 700 so that the metal region 902 on the surface of the substrate W becomes flat or convex with respect to the surrounding silicon dioxide 904. More specifically, the control device 200 obtains the difference between the height of the metal region 902 and the height of the silicon dioxide 904 from the measurement result of the protective film removal device 750. Then, the control device 200 utilizes the characteristic that the silicon dioxide 904 is removed at a faster rate than the metal region 902 when the substrate W is irradiated with ultraviolet light, and obtains the irradiation conditions under which the metal region 902 becomes flat or convex with respect to the surrounding silicon dioxide 904. Then, the control device 200 causes the protective film removal device 750 to irradiate the ultraviolet light based on the irradiation conditions. In this manner, the substrate processing system 100 causes the metal regions 902 on the surface of the substrate W to be flat or convex relative to the surrounding silicon dioxide 904 .

[0055] In this way, the control device 200 controls the protective film removing device 750 based on the measurement results of the measuring device 700 to create the surface shape of the substrate W. However, the control device 200 may create the surface shape of the substrate W without based on the measurement results of the measuring device 700. In another embodiment according to the present disclosure, the substrate processing system 100 may measure the surface shape of the substrate W using a known measuring device after the substrate W is polished by the second polishing device 300B and before the protective film M is formed, and create the surface shape of the substrate W based on the measurement results.

[0056] Furthermore, when the measuring device 700 measures the shape of the entire surface of the substrate W, the measurement time becomes extremely long. For this reason, in the substrate processing system 100, the measuring device 700 may measure the shape of only a portion of the region of the substrate W. In such a case, the control device 200 may use artificial intelligence (AI) to estimate the shape of the remaining region of the substrate W. More specifically, the control device 200 uses measurement data of the external shape of a portion of the substrate W, the recipe of the polishing apparatus 300, the torque of the polishing apparatus 300, the speed of the polishing apparatus 300, and the like. At least one of the pad temperature, optical data, sound / vibration data, film formation recipe, film formation temperature data, plasma emission data during film formation, etching recipe, etching temperature data, plasma emission data during etching, and monitor substrate analysis information may be input into a neural network to obtain data on the overall shape of the substrate W estimated from the neural network.

[0057] Thereafter, the control device 200 may again input at least one of the data on the overall shape of the substrate W, the plasma emission data, and the base recipe into the neural network, and obtain optimal ultraviolet light irradiation conditions (intensity of the ultraviolet light to be irradiated, position to which the ultraviolet light is irradiated, irradiation time, etc.) from the neural network. Thereafter, the control device 200 may cause the protective film removal device 750 to irradiate ultraviolet light based on the obtained irradiation conditions.

[0058] In another embodiment according to the present disclosure, the protective film removing apparatus 750 may be an etching apparatus for dry etching or wet etching the protective film M. The protective film removing apparatus 750 may remove the protective film M by dry etching or wet etching.

[0059] <Joining device 800> Fig. 11 is a perspective view that illustrates a bonding apparatus 800. Referring to Fig. 11, the bonding apparatus 800 includes, as an example, an upper chuck 802, a lower chuck 804, two cameras 806A and 806B, two light sources 808A and 808B, and moving devices 810A and 810B. The upper chuck 802 is configured to hold the first substrate W1. On the other hand, the lower chuck 804 is configured to hold the second substrate W2. The two cameras 806A and 806B are configured to capture images of the first substrate W1 and the second substrate W2 through holes 812A and 812B formed in the upper chuck 802, respectively. The two light sources 808A and 808B provide the cameras 806A and 806B with light necessary for capturing images. The moving device 810A is configured to move the upper chuck 802. On the other hand, the moving device 810B is configured to move the lower chuck 804.

[0060] When the bonding device 800 bonds the first substrate W1 and the second substrate W2, first, the upper chuck 802 holds the first substrate W1, and the lower chuck 804 holds the second substrate W2. Next, the moving devices 810A and 810B move the upper chuck 802 and the lower chuck 804 horizontally to a position where the two cameras 806A and 806B can photograph the first substrate W1 and the second substrate W2. Next, the two cameras 806A and 806B photograph the first substrate W1 and the second substrate W2. At this time, the positional relationship between the first substrate W1 and the second substrate W2 can be recognized from the alignment marks attached to the first substrate W1 and the second substrate W2. Next, the moving devices 810A and 810B move the upper chuck 802 and the lower chuck 804 horizontally so that the alignment mark of the first substrate W1 and the alignment mark of the second substrate W2 are aligned. Next, the upper chuck 802 moves in a direction approaching the lower chuck 804. As a result, the first substrate W1 comes into contact with and is bonded to the second substrate W2. In this manner, the bonding apparatus 800 can bond the first substrate W1 and the second substrate W2. In other words, the substrate processing system 100 can bond two substrates W.

[0061] The first substrate W1 and the second substrate W2 may be subjected to a surface activation treatment and a hydrophilization treatment as necessary before being bonded by the bonding apparatus 800 and after the protective film M is removed. Furthermore, the first substrate W1 and the second substrate W2 may be subjected to an annealing treatment as necessary after being bonded.

[0062] <Operation of the Substrate Processing System 100> Next, an example of the operation of the substrate processing system 100 will be described with reference to FIG. 1. When the substrate processing system 100 starts to operate, first, the substrate W is transported to the first polishing apparatus 300A and polished by the first polishing apparatus 300A. Next, the substrate W is transported to the second polishing apparatus 300B and polished by the second polishing apparatus 300B. In this way, the substrate W is polished in two stages, so that the surface of the substrate W becomes flatter. Next, the substrate W is transported to the cleaning apparatus 400 and cleaned by the cleaning apparatus 400. Next, the substrate W is transported to the protective film forming apparatus 500, and a protective film M is formed on the surface of the substrate W by the protective film forming apparatus 500. Note that the substrate W may be stored as necessary after the protective film M is formed.

[0063] Next, the substrate W is transported to the back grinding device 600. Then, the back grinding device 600 cuts the back surface of the substrate W, and the thickness of the substrate W is reduced. Next, the substrate W is transported to the dicing device 650. Note that the substrate W that does not require cutting of the back surface may be transported to the dicing device 650 without being transported to the back grinding device 600. The substrate W transported to the dicing device 650 is diced to become a chip-shaped substrate W. Next, the substrate W is transported to the measuring device 700. Note that the substrate W that does not require dicing may be transported to the measuring device 700 without being transported to the dicing device 650.

[0064] The surface shape of the substrate W transported to the measuring device 700 is measured by the measuring device 700. Next, the substrate W is transported to a protective film removing device 750, where the protective film M is removed. Thereafter, the surface shape of the substrate W is fabricated as necessary. Next, the substrate W is transported to a bonding device 800, where it is bonded to another substrate W. Note that the substrate W may be subjected to a surface activation process and a hydrophilization process as necessary before bonding by the bonding device 800. The substrates W bonded by the bonding device 800 are then subjected to an annealing process. In this manner, the substrate processing system 100 bonds the substrates W.

[0065] In the substrate processing system 100, the control device 200 controls the second polishing apparatus 300B and the protective film forming apparatus 500 so that the time from the end of polishing by the second polishing apparatus 300B to the start of formation of the protective film M by the protective film forming apparatus 500 is within 30 minutes. The end of polishing by the second polishing apparatus 300B is when the polishing pad 310 is separated from the substrate W. The start of formation of the protective film M is when the chemical liquid comes into contact with the substrate W.

[0066] It is known that a layer containing hydroxyl groups (OH groups) is formed on the surface of the substrate W immediately after being polished by the polishing apparatus 300. In addition, when a pair of substrates W having a layer containing hydroxyl groups contact each other, an attractive force such as hydrogen bonding acts between the pair of substrates W. As a result, the pair of substrates W are bonded to each other. However, the layer containing hydroxyl groups is lost as time passes, as the hydroxyl groups are replaced by other functional groups. For this reason, it has been conventionally required to form a layer containing hydroxyl groups on the surface of the substrate W immediately before bonding the substrates W. In other words, conventionally, a surface activation process and a hydrophilization process have been performed on the substrates W immediately before bonding the substrates W in order to form a layer containing hydroxyl groups.

[0067] In contrast, the substrate processing system 100 forms a protective film M on the substrate W immediately (within 30 minutes) after polishing the substrate W. As a result, the substrate W can be bonded to another substrate W after the protective film M is removed without being subjected to a surface activation process.

[0068] This principle is hypothetically considered as follows. When a protective film M is formed on a substrate W, a component M of the protective film M reacts with hydroxyl groups (OH groups) on the surface of the substrate W, forming a layer containing Si-OM on the surface of the substrate W. When the protective film M is subsequently removed from the substrate W, a layer containing Si-O- remains on the surface of the substrate W. Then, when this substrate W is superimposed on another substrate W having a layer containing Si-O- on its surface, the Si-O- same groups on the surfaces of the two substrates W are formed. and react with each other. As a result, the substrate W is bonded to another substrate W. In another embodiment according to the present disclosure, water or hydrogen may be supplied to the surface of the substrate W after the protective film M is removed from the substrate W. In other words, after a layer containing Si—OH is formed on the surface of the substrate W, the substrate W may be superimposed on another substrate W and bonded.

[0069] Moreover, in the substrate processing system 100, as an example, the control device 200 is configured to control the protective film removing device 750 and the bonding device 800 so that the two substrates W are bonded by the bonding device 800 without being subjected to a surface activation process after the protective film M is removed by the protective film removing device 750. In this way, the substrate processing system 100 can bond the two substrates W without performing a surface activation process on both of the two substrates W after the protective film M has been removed.

[0070] [Note] A part or all of the above-described embodiments can be described as, but is not limited to, the following supplementary notes.

[0071] (Appendix 1) The substrate processing system described in Appendix 1 is a substrate processing system including a protective film forming device for forming a protective film on a surface of a substrate using a chemical solution, and a protective film removal device for removing the protective film by irradiating the protective film with ultraviolet light.

[0072] The substrate processing system according to the appended claim 1 can form a protective film for protecting the surface of the substrate. That is, the substrate processing system can protect the metal region of the substrate from oxidation. Furthermore, the substrate processing system can remove the protective film by ultraviolet light.

[0073] (Appendix 2) The substrate processing system according to claim 2 is the substrate processing system according to claim 1, wherein the chemical solution contains a molecular bonding agent, a resist, or a resin.

[0074] (Appendix 3) The substrate processing system described in Appendix 3 is the substrate processing system described in Appendix 1 or 2, and includes a polishing apparatus for polishing the substrate, and a control device, and the control device controls the polishing apparatus and the protective film forming apparatus so that the time from the end of polishing by the polishing apparatus to the start of formation of the protective film by the protective film forming apparatus is within 30 minutes.

[0075] The substrate processing system according to Supplementary Note 3 forms a protective film on the substrate immediately (within 30 minutes) after polishing the substrate. This allows the substrate W to be bonded to another substrate W after the protective film M is removed without being subjected to a surface activation process.

[0076] (Appendix 4) The substrate processing system described in Appendix 4 is the substrate processing system described in Appendix 2, wherein the protective film forming apparatus is configured to form the protective film on the surface of the substrate using the molecular bonding agent, and the substrate processing system further includes a control device and a measuring device for measuring a shape of the surface of the substrate, and the control device is configured to control the protective film forming apparatus and the measuring device such that the measuring device measures the shape of the surface of the substrate after the protective film forming apparatus forms the protective film.

[0077] The measuring device according to appendix 4 can measure substantially the same shape as the surface shape of the substrate. In addition, the protective film prevents oxidation of the metal region of the substrate during measurement.

[0078] (Appendix 5) The substrate processing system described in Appendix 5 is the substrate processing system described in Appendix 4, and includes a control device configured to control at least one of the intensity of the ultraviolet light irradiated by the protective film removal device, the position at which the ultraviolet light is irradiated, and the irradiation time based on the measurement results of the shape of the surface, so that a metal region on the surface of the substrate is flat or convex with respect to the surrounding silicon dioxide.

[0079] The substrate processing system described in Appendix 4 can render metal areas on the surface of the substrate flat or convex relative to the surrounding silicon dioxide.

[0080] (Appendix 6) The substrate processing system described in Appendix 6 is the substrate processing system described in Appendix 1 or 2, wherein the protective film removal apparatus has a stage for holding and moving the substrate, and a head for irradiating the ultraviolet light onto a partial or entire area of ​​the surface of the substrate held on the stage, and the ultraviolet light is excimer light.

[0081] (Appendix 7) The substrate processing system described in Appendix 7 is the substrate processing system described in Appendix 1 or 2, wherein the protective film forming apparatus includes a coating device for applying the chemical liquid to the substrate, the coating device including a table for rotatably holding the substrate, and a chemical liquid nozzle for supplying the chemical liquid toward the substrate.

[0082] (Appendix 8) The substrate processing system described in Appendix 8 is the substrate processing system described in Appendix 7, wherein the coating device includes a pure water nozzle that sprays pure water toward the substrate, a gas nozzle that sprays IPA gas toward the substrate, and an arm in which the pure water nozzle, the gas nozzle, and the chemical nozzle are provided and for moving the pure water nozzle, the gas nozzle, and the chemical nozzle together above the substrate, and the pure water nozzle, the gas nozzle, and the chemical nozzle are configured to be arranged in this order.

[0083] The substrate processing system according to appendix 8 can supply the chemical solution to the substrate immediately after the Rotagoni drying. As a result, the substrate processing system can reduce the time that the metal region on the surface of the substrate is in contact with air, and can suppress oxidation of the metal region.

[0084] (Appendix 9) The substrate processing system described in Appendix 9 is the substrate processing system described in Appendix 1 or 2, and includes a backgrinding device having a grinding table configured to hold the substrate and a grinding head for grinding the back surface of the substrate on which the protective film is formed.

[0085] The substrate processing system according to appendix 9 can protect the substrate during back-grinding by the protective film.

[0086] (Appendix 10) The substrate processing system described in Supplementary Note 10 is the substrate processing system described in Supplementary Note 3, further comprising a bonding device for bonding two of the substrates, the bonding device including an upper chuck for holding a first substrate that is one of the substrates, a lower chuck for holding a second substrate that is another one of the substrates, a camera for photographing the first substrate held by the upper chuck and the second substrate held by the chuck, and a moving device for moving at least one of the upper chuck and the lower chuck. .

[0087] The substrate processing system according to claim 10 is capable of bonding a pair of substrates.

[0088] (Appendix 11) The substrate processing system described in Appendix 11 is the substrate processing system described in Appendix 10, wherein the control device is configured to control the protective film removal device and the bonding device so that both the first substrate and the second substrate are bonded by the bonding device without being subjected to a surface activation process after the protective film is removed by the protective film removal device.

[0089] (Appendix 12) The method for forming and removing a protective layer described in Appendix 11 includes the steps of forming a protective film on a surface of a substrate using a chemical solution, and removing the protective film by irradiating the protective film with ultraviolet light.

[0090] The method for forming and removing a protective layer according to claim 12 has the same effects as the substrate processing system according to claim 1. That is, the method for forming and removing a protective layer according to claim 12 can protect a metal region of a substrate from oxidation. Furthermore, the method for forming and removing a protective layer can remove a protective film by ultraviolet light.

[0091] Although the embodiment of the present invention and each modification thereof have been described above, it goes without saying that the above-mentioned examples are for the purpose of facilitating understanding of the present invention and do not limit the present invention. The present invention can be appropriately modified and improved without departing from the spirit of the present invention, and equivalents thereof are included in the present invention. In addition, any combination or omission of each component described in the claims and specification is possible within the scope of solving at least a part of the above-mentioned problems or achieving at least a part of the effects. [Explanation of symbols]

[0092] 100: Substrate processing system 200: Control device 300: Polishing equipment 400: Cleaning equipment 500: Protective film forming device 510,540: Coating equipment 542: Table 544: Arm 546: Chemical nozzle 548: Pure water nozzle 550: Gas nozzle 580: Bake device 600: Back grinding device 650: Dicing equipment 700: Measuring equipment 750:Protective film removal device 752: Stage 754: Head 756: Light source 800:Joining equipment 902: Metal area 904: Insulating area, silicon dioxide

Claims

1. 1. A substrate processing system, comprising: a protective film forming device for forming a protective film on a surface of a substrate by using a chemical solution; a protective film removing device for removing the protective film by irradiating the protective film with ultraviolet light; A substrate processing system comprising:

2. 2. The substrate processing system of claim 1, The chemical solution includes a molecular adhesive, a resist or a resin; Substrate processing system.

3. 3. The substrate processing system according to claim 1, a polishing apparatus for polishing the substrate; A control device; Equipped with the control device controls the polishing device and the protective film forming device so that the time from the end of polishing by the polishing device to the start of formation of the protective film by the protective film forming device is within 30 minutes. Substrate processing system.

4. 3. The substrate processing system according to claim 2, the protective film forming apparatus is configured to form the protective film on the surface of the substrate using the molecular bonding agent; The substrate processing system includes: A control device; a measuring device for measuring a shape of the surface of the substrate, the control device is configured to control the protective film forming device and the measuring device so that the measuring device measures the shape of the surface of the substrate after the protective film forming device forms the protective film. Substrate processing system.

5. 5. The substrate processing system according to claim 4, The control device is configured to control at least one of the intensity of the ultraviolet light irradiated by the protective film removal device, the position to which the ultraviolet light is irradiated, and the irradiation time based on the measurement result of the shape of the surface so that the metal region of the surface of the substrate becomes flat or convex with respect to the surrounding silicon dioxide. Substrate processing system.

6. 3. The substrate processing system according to claim 1, The protective film removing device includes: a stage for holding and moving the substrate; a head for irradiating a part or the whole area of ​​the surface of the substrate held by the stage with the ultraviolet light; having The ultraviolet light is excimer light. Substrate processing system.

7. 3. The substrate processing system according to claim 1, the protective film forming apparatus includes a coating device for coating the chemical solution on the substrate, The coating device includes: a table that rotatably holds the substrate; a chemical nozzle for supplying the chemical toward the substrate; having Substrate processing system.

8. 8. The substrate processing system according to claim 7, The coating device includes: a pure water nozzle for spraying pure water toward the substrate; a gas nozzle for injecting IPA gas toward the substrate; an arm provided with the pure water nozzle, the gas nozzle, and the chemical nozzle, and configured to move the pure water nozzle, the gas nozzle, and the chemical nozzle together above the substrate; having The pure water nozzle, the gas nozzle, and the chemical liquid nozzle are arranged in this order. Substrate processing system.

9. 3. The substrate processing system according to claim 1, Equipped with a back grinding device, The back grinding device is a grinding table configured to hold the substrate; a grinding head for grinding the back surface of the substrate on which the protective film is formed; having Substrate processing system.

10. 4. The substrate processing system according to claim 3, Further comprising a bonding device for bonding the two substrates, The joining device includes: an upper chuck for gripping a first substrate, which is one of the substrates; a lower chuck for gripping a second substrate, the second substrate being another one of the substrates; a camera for photographing the first substrate held by the upper chuck and the second substrate held by the chuck; a moving device for moving at least one of the upper chuck and the lower chuck; Equipped with Substrate processing system.

11. 11. The substrate processing system of claim 10, The control device is configured to control the protective film removing device and the bonding device so that both of the first substrate and the second substrate are bonded by the bonding device without being subjected to a surface activation process after the protective film is removed by the protective film removing device. Substrate Processing System

12. A method for forming and removing a protective layer, comprising the steps of: forming a protective film on a surface of the substrate using a chemical solution; removing the protective film by irradiating the protective film with ultraviolet light; having Methods for forming and removing protective layers.

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