Semiconductor package containing insulating material
By using insulating materials with high endurance and suitable thermal expansion coefficient in the rewiring structure of semiconductor packaging, the problem of vulnerability to insulating layers and mismatch in thermal expansion in the prior art is solved, and higher reliability and mechanical strength are achieved.
JP2025054204APending Publication Date: 2025-04-07SAMSUNG ELECTRONICS CO LTD
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Patent Information
- Application Number
- JP2024155441
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2023-11-02
- Filing Date
- 2024-09-10
- Publication Date
- 2025-04-07
AI Technical Summary
Technical Problem
In existing semiconductor packaging, the insulating layer in the rewiring structure is susceptible to physical damage, and the mismatched thermal expansion coefficient leads to low reliability.
Method used
Insulating materials with high endurance and suitable thermal expansion coefficient are used as the insulating layer in the rewiring structure, and the overall mechanical strength and thermal expansion matching are improved through multi-layer insulation structure and optimized connection methods.
Benefits of technology
The reliability of semiconductor packaging is significantly improved, physical damage is prevented, and the risk of cracks caused by thermal expansion is reduced by optimizing the material properties of the insulating layer.
✦ Generated by Eureka AI based on patent content.
Abstract
To provide a semiconductor package containing an insulating material.SOLUTION: A semiconductor package 1000 contains: a re-wiring structure body 300 that contains a re-wiring layer containing copper (Cu) and an insulation layer 310 surrounding the re-wiring layer; a semiconductor chip 100 that is mounted onto the re-wiring structure body, and contains a plurality of chip-coupling members 130; an internal coupling terminal 134 that is arranged between the re-wiring structure body and the semiconductor chip, and electrically connects the re-wiring layer and a connection pad; an external coupling terminal 600 that is adhered to a lower side of the re-wiring structure body, and is electrically connected to the re-wiring layer; and a sealing member 250 that surrounds the semiconductor chip and the internal coupling terminal on the re-wiring structure body. The insulation layer is made of an insulating material, where K satisfies 20 or more in a TC index.SELECTED DRAWING: Figure 1
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