Processing apparatus, lithography apparatus, repair method, and article manufacturing method

Abstract

To provide a technique that is beneficial for achieving efficient repair of a surface of a substrate support member.SOLUTION: A processing apparatus for forming a diamond-like carbon film on a surface of a substrate support member, comprises: a head having injection holes that inject a material for forming the diamond-like carbon film; a drive mechanism for adjusting a relative position between the substrate support member and the head; and a control unit configured to control the drive mechanism so that the diamond-like carbon film is formed at a target position on the surface of the substrate support member.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a processing apparatus, a lithographic apparatus, a repair method and an article manufacturing method. [Background technology]

[0002] Repeated use of a substrate chuck used in a semiconductor manufacturing process, etc., can cause wear and tear on parts of the substrate chuck, making it unable to support the substrate in a flat state. This can lead to focus errors and reduced overlay accuracy in an exposure apparatus that transfers a pattern from an original onto a substrate. Furthermore, in an imprinting apparatus, the thickness of the formed pattern can be poor.

[0003] Patent document 1 describes a method for repairing an object holder having a worn burr, in which the worn burr is reconstructed to its original shape and / or height by sintering powder particles by laser sintering. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Publication No. 2020-24451 Summary of the Invention [Problem to be solved by the invention]

[0005] However, the method of sintering powder particles by laser sintering as described in Patent Document 1 results in a burl having a rough upper surface, which must be polished to obtain a burl with a flat upper surface.

[0006] SUMMARY OF THE INVENTION The present invention aims to provide an advantageous technique for efficiently repairing the surface of a substrate support member. [Means for solving the problem]

[0007] One aspect of the present invention relates to a processing apparatus for forming a diamond-like carbon film on the surface of a substrate support member, the processing apparatus comprising: a head having an injection hole for injecting raw material for forming the diamond-like carbon film; a drive mechanism for adjusting the relative position between the substrate support member and the head; and a control unit for controlling the drive mechanism so that the diamond-like carbon film is formed at a target position on the substrate support member. [Effects of the Invention]

[0008] The present invention provides an advantageous technique for efficiently repairing the surface of a substrate support member. [Brief explanation of the drawings]

[0009] [Figure 1] FIG. 1 is a diagram showing the configuration of a processing apparatus according to an embodiment. [Figure 2] FIG. 2 is a diagram for explaining an example of the configuration of a head. [Figure 3] 5A and 5B are diagrams for explaining a method for measuring the shape of the surface of a substrate chuck. [Figure 4] 10A and 10B are diagrams for explaining a worn protrusion of a substrate chuck and its repair. [Figure 5] 10A to 10C are diagrams for explaining a method for repairing a substrate chuck. [Figure 6] 1A and 1B are diagrams illustrating a method for removing a DLC film. [Figure 7] FIG. 1 is a diagram showing a first example configuration of a lithography apparatus incorporating a processing apparatus. [Figure 8] FIG. 1 is a diagram showing an example of the operation of a lithography apparatus incorporating a processing device. [Figure 9] FIG. 10 shows a second example configuration of a lithography apparatus incorporating a processing device. [Figure 10] FIG. 10 shows a third example configuration of a lithography apparatus incorporating a processing device. [Figure 11] FIG. 10 is a diagram showing a fourth example configuration of a lithography apparatus incorporating a processing device. DETAILED DESCRIPTION OF THE INVENTION

[0010] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. Note that the following embodiments do not limit the scope of the invention claimed. Although multiple features are described in the embodiments, not all of these multiple features are necessarily essential to the invention, and multiple features may be combined arbitrarily. Furthermore, in the accompanying drawings, the same reference numerals are used to designate the same or similar components, and redundant explanations will be omitted.

[0011] 1 shows the configuration of a processing apparatus 100 according to one embodiment. The processing apparatus 100 can be configured as an apparatus for forming a diamond-like carbon film (hereinafter referred to as a DLC film) on the surface of a substrate chuck 110 serving as a substrate support member. The processing apparatus 100 can also function as a repair apparatus for repairing the substrate chuck 110.

[0012] The substrate chuck 110 may be incorporated into, for example, a lithography apparatus. The substrate chuck 110 may be configured to chuck a substrate by, for example, vacuum suction or electrostatic force. In one example, the substrate is a semiconductor wafer. The substrate may have one or more layers on the semiconductor wafer. A lithography apparatus is generally a pattern forming apparatus for forming a pattern on a substrate. More specifically, a lithography apparatus may be, for example, an exposure apparatus that exposes a substrate (photoresist) by projecting a pattern of an original onto the substrate coated with photoresist. A latent image pattern is formed in the exposed photoresist, and the latent image pattern is converted into a physical pattern through a development process. Alternatively, a lithography apparatus may be an imprint apparatus that transfers the pattern of the original to a curable composition arranged on a substrate by contacting the original with the curable composition and then curing the curable composition. Alternatively, a lithography apparatus may be a writing apparatus that writes a pattern on a substrate coated with photoresist using a charged particle beam (e.g., an electron beam).

[0013] The substrate chuck 110 may be configured as a pin chuck having multiple protrusions (pins) 111, as shown in FIG. 1 . In the processing apparatus 100, when the substrate chuck 110 holds a substrate, particles may become trapped between the surface of the substrate chuck 110 and the substrate. In such cases, the surface of the substrate may be locally deformed. To prevent this, a pin chuck having multiple protrusions 111 may be employed. Providing multiple protrusions 111 reduces the contact area between the substrate chuck 110 and the substrate, thereby reducing the probability of particles becoming trapped between the surface of the substrate chuck 110 and the substrate. An example in which the substrate chuck 110 has multiple protrusions 111 will be described below.

[0014] The substrate chuck 110 may have a DLC film on its surface. As illustrated in FIG. 4(B1), in a substrate chuck 110 having a DLC film 300 on its surface, only the DLC film 300 on the protrusion 113 may be worn away. In such a case, as illustrated in FIG. 4(B2), a new DLC film 310 may be formed on the protrusion 113 where only the DLC film 300 has been worn away. In such a case, the DLC film 310 is formed on the DLC film 300, thereby increasing the adhesion or bonding strength of the DLC film 310 to the worn protrusion 113.

[0015] Next, the processing apparatus 100 will be described. The processing apparatus 100 may include, for example, a head 130 having injection holes 131 for injecting a raw material (raw material gas) for forming a DLC film, and a drive mechanism 120 for adjusting the relative position between the substrate chuck 110 and the head 130. The drive mechanism 120 may include, for example, a stage 122 for holding the substrate chuck 110 and a positioning mechanism 124 for positioning the stage 122. The positioning mechanism 124 may include, for example, an actuator such as a motor. The processing apparatus 100 may also include a control unit 170 for controlling the drive mechanism 120 so that a DLC film is formed at a target position on the entire surface of the substrate chuck 110. The control unit 170 may be, for example, a PLD (abbreviation for programmable logic device) such as an FPGA (abbreviation for field programmable gate array), an ASIC (abbreviation for application specific integrated circuit), a general-purpose or dedicated computer with an embedded program, or a combination of all or part of these.

[0016] The processing apparatus 100 may also include a raw material supply path 142 that supplies raw materials for forming a DLC film to the head 130. The raw material supply path 142 may be provided with a flow rate regulator 140 that regulates the flow rate of the raw materials supplied to the head 130. The flow rate regulator 140 may be, for example, a mass flow controller. The control unit 170 may control the flow rate regulator 140 to regulate the flow rate of the raw materials supplied to the head 130. The processing apparatus 100 may also include a driving power supply 160 that supplies a driving voltage V to the head 130 to generate plasma (e.g., atmospheric pressure plasma). The driving voltage V is supplied to the head 130 via a voltage supply line 162. The driving power supply 160 may include, for example, a pulse generator that supplies a pulse voltage to the head 130 as the driving voltage V. The control unit 170 may supply a parameter value to the driving power supply 160 to control the driving voltage (e.g., waveform) supplied to the head 130. The stage 122 may be grounded.

[0017] In one example, the control unit 170 can control the driving mechanism 120 so that the ejection holes 131 of the head 130 face a target position on the entire surface of the substrate chuck 110 (substrate support member). Next, the control unit 170 can control the driving power supply 160 so that a driving voltage V is applied between the stage 122 and the head 130 while the raw material is being ejected from the ejection holes 131 of the head 130 at a set flow rate. As a result, for example, plasma for forming a DLC film can be generated under atmospheric pressure, and a DLC film can be formed at the target position on the entire surface of the substrate chuck 110 (substrate support member).

[0018] As illustrated in FIG. 2( b), the head 130 may include a cylindrical member made of a conductive material such as metal. The injection hole 131 may be a through-hole provided in the cylindrical member with an inner diameter D and communicates with the raw material supply path 142. A DLC film having a diameter close to the inner diameter D may be formed on the substrate chuck 110. Therefore, the inner diameter D of the injection hole 131 of the head 130 is preferably smaller than the diameter of the worn protrusion 112 of the substrate chuck 110. Consider a case in which the substrate chuck 110 has multiple protrusions 111 and a worn protrusion 112, as illustrated in FIG. 2( a). To prevent a DLC film from being simultaneously formed on the worn protrusion 112 and the adjacent protrusion 111, it is preferable that D≦dR, where d is the center-to-center distance between the worn protrusion 112 and the adjacent protrusion 111. In the configuration illustrated in FIG. 2( b), it is preferable that D=dR from the viewpoint of productivity. Alternatively, as illustrated in Fig. 2(c), the diameter of the outlet of the injection hole 131 may be defined by a mask 132 having a through hole with a diameter Dmask. In this case, it is preferable that Dmask≦dR. In the configuration illustrated in Fig. 2(c), it is preferable that Dmask=dR from the viewpoint of productivity.

[0019] A component constituting the raw material supply path 142, for example, a supply pipe, may be made of an insulator to prevent the voltage supplied to the head 130 through the voltage supply line 162 from being transmitted through the raw material supply path 142. Alternatively, the head 130 and the raw material supply path 142 may be insulated by an insulating member. The ground terminal of the driving power supply 160 is grounded.

[0020] The raw material (raw material gas) supplied to the head 130 through the raw material supply path 142 may be, for example, a hydrocarbon gas such as methane, ethylene, propane, or toluene. To increase the hardness of the DLC film, the raw material (raw material gas) used to form the DLC film is preferably methane. To increase the hardness of the DLC film, a method of generating plasma by glow discharge is preferable to a method of generating plasma by arc discharge. Plasma generated under atmospheric pressure conditions is likely to transition to arc discharge. Therefore, to maintain glow discharge, it is preferable to mix helium gas into the raw material gas. To generate plasma by glow discharge, it is preferable that the voltage pulse serving as the driving voltage V has a short pulse width, high voltage, and high frequency. For example, the pulse width should be within the range of 400 to 800 nsec, the voltage value should be within the range of 1 to 3 kV, and the frequency should be within the range of 3 to 5 kHz.

[0021] 1 shows a configuration in which the substrate chuck 110 (substrate support member) is moved as the driving mechanism 120 for adjusting the relative position between the substrate chuck 110 (substrate support member) and the head 130. However, the head 130 may be moved, or both the substrate chuck 110 and the head 130 may be moved. In the process of forming a DLC film, the head 130, the stage 122 (and the substrate chuck 110) may be placed in a local exhaust system to prevent unreacted raw material (source gas) from being discharged into the space outside the processing apparatus 100.

[0022] 1 and 3 to 6, a specific example of a repair method for repairing the worn protrusion 112 of the substrate chuck 110 to a target shape in the processing apparatus 100 will be described below. Fig. 5 illustrates the flow of the repair method.

[0023] In step S1, the control unit 170 measures the shape of the measurement target. The measurement target may be the surface of the substrate chuck 110 (a substrate holding surface including a plurality of protrusions 111), or the surface of the substrate 200 held by the substrate chuck 110. In the latter case, if the plurality of protrusions 111 of the substrate chuck 110 include a worn protrusion 112, recesses and distortions due to the protrusion 112 may occur on the surface of the substrate 200. The method for measuring the shape of the surface of the substrate 200 held by the substrate chuck 110 is simpler than the method for measuring the shape of the surface of the substrate chuck 110 and is advantageous in reducing error factors. Therefore, an example using the method for measuring the shape of the surface of the substrate 200 held by the substrate chuck 110 will be described below.

[0024] The substrate 200 may be a material substrate for manufacturing a device using a lithography apparatus including the substrate chuck 110, or may be a measurement substrate. The shape of interest may be the unevenness of the surface of the substrate 200, i.e., the height distribution of the surface of the substrate 200 (the amount of deformation in the out-of-plane direction of the substrate 200), or the distortion in a direction along the surface of the substrate (the amount of deformation in the in-plane direction of the substrate 200). Measurement of the distortion of the substrate can be performed, for example, by measuring a pattern arranged on the surface of the substrate 200.

[0025] For example, a displacement measuring instrument 210 that measures local displacement may be used to measure the shape of the surface of the substrate 200, as shown schematically in Fig. 3(a). Alternatively, a planar displacement measuring instrument 220 that measures unevenness over a wide range all at once may be used to measure the shape of the surface of the substrate 200, as shown schematically in Fig. 3(b). Alternatively, other measuring instruments may be used.

[0026] Examples of the displacement measuring instrument 210 that measures local displacement include a distance interferometer and a triangulation displacement meter. For example, the height distribution of the surface of the substrate 200 (the amount of deformation in the out-of-plane direction of the substrate 200) can be measured by measuring the height of the substrate chuck 110 or the substrate 200 with the displacement measuring instrument 210 while driving the stage 122 horizontally. Instead of moving the stage 122, the displacement measuring instrument 210 may be moved, or both the stage 122 and the displacement measuring instrument 210 may be moved.

[0027] An example of the planar displacement measuring instrument 220 that measures unevenness over a wide range at once is a planar interferometer. However, since employing a planar interferometer with a measurement range that can measure the entire surface of the substrate 200 is costly, a planar displacement measuring instrument that measures a measurement range narrower than the entire surface of the substrate chuck 110 may be used, as schematically shown in Fig. 3(b). In this case, measurement may be performed while moving at least one of the stage 122 and the planar displacement measuring instrument 220.

[0028] 3(a), in a method of relatively driving the displacement measuring instrument 210 and the substrate 200, the method is generally affected by running errors (deviation from the plane that occurs due to relative driving) of the displacement measuring instrument 210 and / or the substrate chuck 110. Therefore, in order to improve measurement accuracy, measurement using a planar displacement measuring instrument that measures a wide range all at once can reduce measurement errors.

[0029] The size of the range where the planar displacement measuring instrument 220 performs measurements in one go is preferably a size that encompasses the shot area, which is the largest constituent unit of a device manufactured on the substrate 200. In this case, the shot area can be measured in one go, thereby reducing errors due to relative driving. Furthermore, if the size of the range where measurements are performed in one go is made slightly larger than the shot area, shape measurement results can be obtained for measurements of the entire surface of the substrate 200 by stitching, which aligns the overlap of displacement measurements with adjacent shot areas.

[0030] In step S2, the control unit 170 determines whether to form a DLC film to repair the substrate chuck 110 based on the result of step S1, i.e., the output of a measuring instrument that measures the shape of the surface of the substrate chuck 110. The control unit 170 can determine to form a film for repair when, for example, the depth of a recess in the surface of the substrate chuck 110 exceeds a threshold value. Alternatively, the control unit 170 can determine to form a film for repair based on the transition of the depth of the recess. Alternatively, the control unit 170 can determine the date and time to form a film for repair (hereinafter, the film formation date and time) based on the transition of the depth of the recess, and then form the film for repair when that timing arrives. Here, if the film formation date and time is earlier than the date and time of the next measurement, the film formation can be performed on the film formation date and time. On the other hand, if the film formation date and time is later than the date and time of the next measurement, the film formation date and time can be corrected based on the results of the next measurement.

[0031] If the depth of the recess is greater than a predetermined reference depth or if the number of locations to be repaired is greater than a predetermined reference number, an excessively long repair time will be required. In such cases, the control unit 170 may decide not to carry out repairs and notify the operator of this using a notification unit such as a display device and / or a warning light.

[0032] In step S2, the control unit 170 determines the position where the damaged protrusion 112 shown in FIG. 4(A1) exists as the target position for forming a DLC film based on the measurement results of the shape of the measurement target measured in step S1 (in other words, the output of the measuring instrument). Then, the control unit 170 executes a process for forming a DLC film 300 on the damaged protrusion 112, as shown in FIG. 4(A2). More specifically, first, the control unit 170 controls the drive mechanism 120 so that the head 130 is positioned above the damaged protrusion 112. Next, the control unit 170 controls the flow rate regulator 140 so that the raw material is supplied to the head 130 through the raw material supply path 142. As a result, the raw material is injected from the injection hole 131. Furthermore, the control unit 170 controls the drive power supply 160 so that a drive voltage V is supplied to the head 130. As a result, plasma is generated near the injection hole 131. The supply time of the driving voltage V is determined so that a DLC film of the target thickness is formed on the worn protrusion 112, i.e., the target position (or target area). When the supply of the driving voltage V for the determined supply time is completed, the control unit 170 controls the flow rate regulator 140 to stop the supply of the raw material. This stops the formation of the DLC film.

[0033] Here, a method for determining the supply time of the driving voltage V will be described. In the processing apparatus 100, a substrate with a known refractive index, such as a silicon wafer, or a substrate with a partially masked surface is supported by the stage 122, and a DLC film is formed on the substrate. When a DLC film is formed on a substrate with a known refractive index, the thickness of the DLC film can be measured using spectroscopic ellipsometry or the like. When a DLC film is formed on a substrate with a partially masked surface, the thickness of the DLC film can be measured by removing the mask after formation and measuring the resulting step using a stylus film thickness meter such as a profilometer. The formation rate R of the DLC film can be calculated based on the thickness of the formed DLC film and the time required to form the DLC film (i.e., the supply time of the driving voltage V). In this way, the formation rate R of the DLC film is acquired in advance. The control unit 170 can determine the supply time T of the driving voltage V (film formation time) based on the formation rate R and the height reduction amount ΔH, which is the difference between the height of the worn protrusion 112 and the height (or target height) of the unworn protrusion 111. The height reduction amount ΔH appears as the depth of recesses caused by worn protrusions 112 when the surface shape (height distribution) of the substrate 200 is measured while the substrate chuck 110 supports the substrate 200. The height reduction amount ΔH may also be understood as the target thickness of the DLC film to be formed. Specifically, the control unit 170 can determine the supply time T based on T=ΔH / R.

[0034] For example, the distance between the head 130 and the substrate (substrate chuck 110) may be set to 1 to 10 mm, and methane and helium may be supplied to the head 130 at flow rates of 0.05 to 0.2 L / min and 2 to 8 L / min, respectively. Furthermore, a driving voltage V may be supplied to the head 130 under atmospheric pressure conditions with a pulse width of 400 to 800 nsec, a voltage of 1 to 3 kV, a pulse frequency of 3 to 5 kHz, and atmospheric pressure. In one example, the DLC film formation rate R is 0.3 μm / min. In step S3, if the height reduction ΔH of the worn protrusion 112 is 0.6 μm and the formation rate R is 0.3 μm / min, the supply time (film formation time) T for the driving voltage V is 2 min, based on T = ΔH / R.

[0035] In step S4, the control unit 170 measures the shape of the substrate 200, which is the measurement target, in the same way as in step S1. Next, in step S5, the control unit 170 determines whether the difference between the shape of the substrate 200 and the target shape is within the tolerance range. If the difference is not within the tolerance range, the control unit 170 executes steps S3 to S5 again. In other words, the control unit 170 repeats the execution of steps S3 to S5 until the difference between the shape of the substrate 200 and the target shape falls within the tolerance range.

[0036] Here, as shown in FIG. 6( a), an excessive amount of DLC film 300 may be formed on the damaged protrusion 113. In such a case, as shown in FIG. 6( b), at least a portion of the DLC film 300 (the portion to be removed) is removed using a removal unit 400, and the repair method shown in FIG. 5 may then be performed again as necessary. To remove the DLC film 300, the DLC film 300 is heated to a temperature of 400°C or higher. By heating the DLC film 300 to a temperature of 400°C or higher, the DLC film 300 is oxidized to carbon dioxide or carbon monoxide, which is then removed. The removal unit 400 may be configured to irradiate the DLC film 300 to be removed with electromagnetic radiation, such as laser light, to locally heat the substrate chuck 110. However, if the protrusion 113 (DLC film 300) and the emission unit of the removal unit 400 can be positioned close to each other, the removal unit 400 may also include an electromagnetic induction heater or heater. The removal unit 400 may be configured to irradiate electromagnetic radiation that penetrates the substrate 200 placed on the substrate chuck 110. In one example, when the substrate 200 is a silicon wafer, the removal unit 400 may be configured to irradiate infrared light that penetrates silicon. In this case, the shape of the substrate chuck 110 can be measured while the silicon wafer as the substrate 200 remains placed on the substrate chuck 110. Therefore, errors associated with re-mounting the substrate 200 can be reduced.

[0037] 1, the processing apparatus 100 may include a removal unit 400. In one example, a function of moving at least one of the substrate chuck 110 (stage 122) and the removal unit 400 is provided, and this function may be provided by, for example, the driving mechanism 120. This function may also be provided by another driving mechanism. When the removal unit 400 has a configuration for irradiating electromagnetic radiation such as laser light, the electromagnetic radiation may be irradiated onto a target position on the substrate chuck 110 using a deflection device such as a galvanometer scanner.

[0038] The DLC film 300 may be removed by irradiating the DLC film 300 with oxygen plasma or argon plasma. For example, oxygen or argon is supplied to the head 130, and a driving voltage V (e.g., a pulse voltage) is supplied from the driving power supply 160 to the head 130, thereby generating oxygen plasma or argon plasma, which can remove the DLC film 300. Alternatively, the DLC film 300 may be removed by combining a heating method with oxygen plasma or argon plasma.

[0039] An exposure apparatus 500 incorporating the processing apparatus 100 will be described below as an example of a lithography apparatus incorporating the processing apparatus 100. FIG. 7 shows a first configuration example of the exposure apparatus 500 incorporating the processing apparatus 100. FIG. 8 shows an example of the operation of the exposure apparatus 500. The process shown in FIG. 8 is obtained by adding step S0 to the process shown in FIG. 5. Step S0 is performed by the main controller 560, and steps S1 to S5 can be performed by the controller 170 under the control of the main controller 560.

[0040] Step S0 may be executed in the background, initiated by an operator, or initiated by a program (software) such as a maintenance program. In step S0, the main controller 560 determines whether repair of the substrate chuck 110 is necessary. The main controller 560 can determine that repair of the substrate chuck 110 is necessary based on, for example, the number of substrates processed after the last maintenance of the substrate chuck 110, the operating time of the exposure apparatus 500, etc. Alternatively, the main controller 560 can determine that repair of the substrate chuck 110 is necessary when the frequency of focus errors exceeds a predetermined frequency. Alternatively, the main controller 560 can determine that repair of the substrate chuck 110 is necessary when the range of focus control amounts (the difference between the maximum and minimum values) for each of multiple shot areas of each substrate exceeds a predetermined range. Alternatively, the main controller 560 can determine that repair of the substrate chuck 110 is necessary when step S0 is initiated by an operator. This is because an operator may suspect the occurrence of wear on the substrate chuck 110 based on the inspection results from an inspection device such as an overlay inspection device. Alternatively, when step S0 is automatically started according to a previously created plan, the main control unit 560 can determine that repair of the substrate chuck 110 is necessary. When the main control unit 560 determines that repair of the substrate chuck 110 is necessary, it causes the control unit 170 to perform steps S1 to S5.

[0041] It is convenient to perform steps S1 and S4 for measuring the shape of the measurement target, and step S3 for forming a DLC film, while the substrate chuck 110 is held by the stage 552 of the substrate stage mechanism 550 for exposing the substrate 200. However, due to restrictions on the placement of the components of the exposure apparatus 500, it may not be possible to place the head 130, etc., within the movable range of the stage 552 (substrate chuck 110) of the substrate stage mechanism 550. In such cases, the main body EXP of the exposure apparatus 500 and the processing device 100 may be placed separately. Furthermore, the main body EXP and the processing device 100 may be housed in different chambers. The main body EXP is the part that performs the process of exposing the substrate.

[0042] When repairing the substrate chuck 110, the substrate chuck 110 is removed from the stage 552 of the substrate stage mechanism 550 and placed on the stage 122 of the processing apparatus 100, and is held by the stage 122, and steps S1 to S5 can be performed.

[0043] 9 shows a second configuration example of exposure apparatus 500 incorporating processing apparatus 100. In the second configuration example, head 130 is disposed within the movable range of stage 552 (substrate chuck 110) of substrate stage mechanism 550. When steps S1 to S5 are performed, stage 552 holding substrate chuck 110 can be driven by positioning mechanism 554 of substrate stage mechanism 550 so that the target position of substrate chuck 110 is positioned below head 130 of processing apparatus 100. If the stroke of driving stage 552 (substrate chuck 110) by positioning mechanism 554 is insufficient, a drive mechanism for driving head 130 may be provided.

[0044] 10 shows a third configuration example of exposure apparatus 500 incorporating processing apparatus 100. In the third configuration example, processing apparatus 100 includes drive mechanism 120, and main body EXP includes substrate stage mechanism 550. While substrate chuck 110 is being repaired in processing apparatus 100, another substrate chuck 110 can be attached to substrate stage mechanism 550 of main body EXP, and processing to expose substrate 200 can be performed. The other replacement substrate chuck 110 can be stored, for example, in stocker ST.

[0045] 11 shows a fourth configuration example of an exposure apparatus 500 incorporating a processing apparatus 100. In the fourth configuration example, the exposure apparatus 500 includes multiple exposure stations 500-1, 500-2, 500-3, and 500-4, and at least one processing apparatus 100. Therefore, at least one processing apparatus 100 is shared by the multiple exposure stations 500-1, 500-2, 500-3, and 500-4. Each of the multiple exposure stations 500-1, 500-2, 500-3, and 500-4 may have a configuration similar to the main body EXP described above.

[0046] Below, we will explain by way of example the configuration of the main body EXP of exposure apparatus 500. The main body EXP may be configured as a stepper that exposes substrate 200 while it is stationary, or it may be configured as a scanner (scanning exposure apparatus) that exposes substrate 200 while scanning it. Below, we will explain by way of example the operation of exposure apparatus 500 configured as a scanner.

[0047] The main body EXP may include, for example, an illumination optical system 510, an original stage 530, a projection optical system 540, and a main controller 560. The substrate chuck 110 is placed on and held by a stage 552 of a substrate stage mechanism 550. The substrate stage mechanism 550 may drive the stage 552 at least in the X, Y, and Z directions. The main controller 560 may be configured, for example, by a PLD (abbreviation for Programmable Logic Device) such as an FPGA (abbreviation for Field Programmable Gate Array), an ASIC (abbreviation for Application Specific Integrated Circuit), a general-purpose or dedicated computer with an embedded program, or a combination of all or part of these.

[0048] The illumination optical system 510 has a light-blocking member such as a masking blade, and can shape light emitted from a light source (not shown) into a slit beam having, for example, a strip-like or arc-like shape elongated in the X direction, and illuminate a portion of the original 520 with the slit beam. The original 520 and the substrate 200 are held by an original stage 530 and a substrate chuck 110, respectively, and are disposed at positions that are approximately optically conjugate with each other via the projection optical system 540 (the object plane and the image plane of the projection optical system 540). The projection optical system 540 projects the pattern of the original 520 onto each of the multiple shot areas of the substrate 200 held by the substrate chuck 110, thereby exposing the multiple shot areas. Specifically, the projection optical system 540 has a predetermined projection magnification (e.g., 1 / 2x, 1 / 4x). During exposure of each shot area, the original stage 530 and the substrate chuck 110 are scanned relatively in synchronization with each other in a direction (e.g., the Y direction) perpendicular to the optical axis direction (Z direction) of the projection optical system 540 at a speed ratio corresponding to the projection magnification of the projection optical system 540.

[0049] Hereinafter, an article manufacturing method for manufacturing an article using a lithography apparatus incorporating the processing apparatus 100 will be described. The article manufacturing method is suitable for manufacturing articles such as microdevices such as semiconductor devices and elements having fine structures. The article manufacturing method of one embodiment may include a pattern formation step for forming a pattern on a substrate using the above-mentioned lithography apparatus (e.g., an exposure apparatus, an imprint apparatus, a drawing apparatus, etc.), and a processing step for obtaining an article by processing the substrate that has undergone the pattern formation step. The processing step includes, for example, development, etching, oxidation, film formation, vapor deposition, doping, planarization, etching, resist stripping, dicing, bonding, packaging, etc. (Item 1) 1. A processing apparatus for forming a diamond-like carbon film on a surface of a substrate support member, comprising: a head having an injection hole for injecting a raw material for forming the diamond-like carbon film; a drive mechanism for adjusting the relative position of the substrate support member and the head; a control unit that controls the driving mechanism so that the diamond-like carbon film is formed at a target position on the surface of the substrate support member; A processing device comprising: (Item 2) a drive power supply that supplies a drive voltage to the head for generating plasma; the control unit controls the drive mechanism and the drive power source. 2. The processing device according to item 1, (Item 3) a flow rate regulator that regulates the flow rate of the raw material supplied to the head; the control unit controls the drive mechanism, the drive power supply, and the flow rate regulator. 3. The processing device according to item 2. (Item 4) the control unit adjusts the driving mechanism, the driving power supply, and the flow rate regulator so that the diamond-like carbon film is formed at the target position and has a target thickness. 4. The processing device according to item 3, (Item 5) The plasma is an atmospheric pressure plasma. 5. The processing device according to any one of items 2 to 4. (Item 6) further comprising a measuring instrument for measuring the shape of the surface of the substrate support member; 6. The processing device according to any one of items 1 to 5. (Item 7) the measuring instrument measures the shape of the surface of the substrate held by the substrate support member; the control unit determines the target position based on an output of the measuring instrument. 7. The processing device according to item 6, (Item 8) a removal unit configured to remove at least a portion of the diamond-like carbon film formed on the surface of the substrate support member; 8. The processing device according to any one of items 1 to 7. (Item 9) the removal unit heats a portion of the diamond-like carbon film to be removed. 9. The processing device according to item 8, (Item 10) the removal unit generates plasma for removing a target portion of the diamond-like carbon film. 9. The processing device according to item 8, (Item 11) The plasma for removing the target portion is oxygen plasma or argon plasma. 11. The processing device according to item 10. (Item 12) a predetermined gas is supplied to the head to generate plasma for removing at least a portion of the diamond-like carbon film formed on the surface of the substrate support member; 9. The processing device according to any one of items 1 to 8. (Item 13) The predetermined gas includes oxygen or argon. Item 13. The processing device according to item 12. (Item 14) 1. A lithographic apparatus for forming a pattern on a substrate held by a substrate support member, comprising: 14. The processing apparatus according to any one of items 1 to 13, which is controlled to repair the substrate support member; 1. A lithographic apparatus comprising: (Item 15) a plurality of stations for processing a substrate to form a pattern; the processing device is shared by the plurality of stations; Item 15. A lithographic apparatus according to item 14, characterized in that (Item 16) 1. A method of manufacturing an article, comprising: forming a pattern on a substrate by the lithography apparatus according to item 14 or 15; a processing step of obtaining an article by processing the substrate that has undergone the forming step; A method for manufacturing an article, comprising: (Item 17) 1. A method for repairing a substrate support member, comprising: a measuring step of measuring a shape of a surface of the substrate support member; a forming step of forming a diamond-like carbon film by plasma at a target position determined based on the surface shape; A repair method comprising: (Item 18) Item 18. The repair method according to item 17, wherein the measuring step measures the shape of the surface of the substrate support member by measuring the shape of the surface of the substrate held by the substrate support member. (Item 19) The method further includes a removing step of removing at least a portion of the diamond-like carbon film having an excess thickness. 19. The repair method according to item 17 or 18, (Item 20) 1. A method of manufacturing an article, comprising: forming a pattern on a substrate while holding the substrate by a substrate support member in a lithography apparatus; a processing step of obtaining an article by processing the substrate that has undergone the forming step; A repairing step of repairing the substrate support member by the repairing method according to any one of items 17 to 19; A method for manufacturing an article, comprising:

[0050] The invention is not limited to the above-described embodiments, and various changes and modifications can be made without departing from the spirit and scope of the invention. Attached. [Explanation of symbols]

[0051] 100: Processing device, 110: Substrate chuck, 111: Protrusion, 112: Worn protrusion, 120: Stage, 130: Head, 131: Injection hole

Claims

1. 1. A processing apparatus for forming a diamond-like carbon film on a surface of a substrate support member, comprising: a head having an injection hole for injecting a raw material for forming the diamond-like carbon film; a drive mechanism for adjusting the relative position of the substrate support member and the head; a control unit that controls the driving mechanism so that the diamond-like carbon film is formed at a target position on the substrate support member; A processing device comprising:

2. a drive power supply that supplies a drive voltage to the head for generating plasma; the control unit controls the drive mechanism and the drive power source.

2. The processing device according to claim 1.

3. a flow rate regulator that regulates the flow rate of the raw material supplied to the head; the control unit controls the drive mechanism, the drive power supply, and the flow rate regulator.

3. The processing device according to claim 2.

4. the control unit adjusts the driving mechanism, the driving power supply, and the flow rate regulator so that the diamond-like carbon film is formed at the target position to a target thickness.

4. The processing device according to claim 3.

5. The plasma is an atmospheric pressure plasma.

3. The processing device according to claim 2.

6. further comprising a measuring instrument for measuring the shape of the surface of the substrate support member; 2. The processing device according to claim 1.

7. the measuring instrument measures the shape of the surface of the substrate held by the substrate support member; the control unit determines the target position based on an output of the measuring instrument.

7. The processing device according to claim 6.

8. a removal unit configured to remove at least a portion of the diamond-like carbon film formed on the surface of the substrate support member; 2. The processing device according to claim 1.

9. the removal unit heats a portion of the diamond-like carbon film to be removed.

9. The processing device according to claim 8.

10. the removal unit generates plasma for removing a target portion of the diamond-like carbon film.

9. The processing device according to claim 8.

11. The plasma for removing the target portion is oxygen plasma or argon plasma. The processing device according to claim 10 .

12. a predetermined gas is supplied to the head to generate plasma for removing at least a portion of the diamond-like carbon film formed on the surface of the substrate support member; 2. The processing device according to claim 1.

13. The predetermined gas includes oxygen or argon.

13. The processing device according to claim 12.

14. 1. A lithographic apparatus for forming a pattern on a substrate held by a substrate support member, comprising: a processing apparatus according to any one of claims 1 to 13, which is controlled to repair the substrate support member; 1. A lithographic apparatus comprising:

15. a plurality of stations for processing a substrate to form a pattern; the processing device is shared by the plurality of stations; A lithographic apparatus according to claim 14.

16. 1. A method of manufacturing an article, comprising: forming a pattern on a substrate by the lithographic apparatus of claim 14; a processing step of obtaining an article by processing the substrate that has undergone the forming step; A method for manufacturing an article, comprising:

17. 1. A method for repairing a substrate support member, comprising: a measuring step of measuring a shape of a surface of the substrate support member; a forming step of forming a diamond-like carbon film by plasma at a target position determined based on the surface shape; A repair method comprising:

18. 18. The repair method according to claim 17, wherein the measuring step measures the shape of the surface of the substrate support member by measuring the shape of the surface of the substrate held by the substrate support member.

19. The method further includes a removing step of removing at least a portion of the diamond-like carbon film having an excess thickness. The repair method of claim 17.

20. 1. A method of manufacturing an article, comprising: forming a pattern on a substrate while holding the substrate by a substrate support member in a lithography apparatus; a processing step of obtaining an article by processing the substrate that has undergone the forming step; a repairing step of repairing the substrate support member by the repair method according to any one of claims 17 to 19; A method for manufacturing an article, comprising:

Images