Oxide-based glass composition having low dielectric constant, and glass fiber and glass substrate using the same

Abstract

To provide an oxide-based glass composition having a low dielectric constant and dielectric loss.SOLUTION: The oxide-based glass composition according to the present invention can provide a glass material for a PCB having a low dielectric constant and a low dielectric loss, a glass fiber, and a glass substrate. The oxide-based glass composition according to the present invention has a low softening temperature and excellent fining properties, and thus can solve many problems of the prior art.SELECTED DRAWING: Figure 6

Description

[Technical Field]

[0001] The present invention relates to an oxide-based glass composition, a glass fiber and a glass substrate using the same, and more particularly to an oxide-based glass composition having low dielectric properties and low viscosity, which makes it easy to remove microbubbles, and a glass fiber and a glass substrate using the same. [Background technology]

[0002] High-layer printed circuit boards (PCBs) are key components used in the development of high-performance IT devices. With the growth of the ultra-high-speed communications, autonomous vehicles, and artificial intelligence markets, the demand for high-layer PCBs used in the development of high-performance signal processing boards is rapidly increasing.

[0003] CCL (Copper Clad Laminate) used in PCB development is largely composed of inorganic glass fiber, organic resin, filler, and copper foil. Glass fiber is used as the framework of the prepreg that makes up CCL and plays an important role in ensuring that it has sufficient mechanical and thermal properties.

[0004] In particular, as communication technology has become faster and larger in capacity in recent years, it is important to secure materials with low dielectric loss characteristics in the high frequency signal band for circuit board materials (CCL) that are used in communication equipment, base station radar, antennas, server boards, etc. To achieve this, it is essential to secure glass fiber material technology that has low dielectric constant (Dk) and dielectric dissipation factor (Df) characteristics to make up CCL.

[0005] Existing E-glass used in low-speed PCBs is made of glass material with a composition of, for example, 54.3 wt% Si02, 36 wt% B20, 14 wt% Al203, 2.7 wt% Mg0+Ca02, 1.0 wt% Li20+Na20+K20, and 0.3 wt% Fe02. This type of E-glass has a high dielectric constant in the range of 6.5-7.0 at 1 MHz and a high dielectric loss characteristic in the range of 0.005-0.008, making it difficult to use in high frequency bands above 1 GHz due to the high energy loss.

[0006] Therefore, existing glass fiber (E-glass) materials for electronic devices have limitations in order to ensure the dielectric properties of CCL required for ultra-high-speed communications at 5G and above. Therefore, it is necessary to secure glass materials with similar mechanical and thermal properties as existing materials but lower dielectric constants and dielectric loss characteristics, and glass fiber technology using such materials. To ensure the dielectric properties of CCL required for ultra-high-speed communications at 5G and above, it is desirable to secure glass material technology with sufficiently low dielectric constants and dielectric loss characteristics in the high-frequency band above 10 GHz. Recently, ultra-high-speed communications technologies at 28 GHz and above have been commercialized to increase data transmission capacity. Therefore, it is necessary to verify and secure low-dielectric glass technology for glass fiber used in printed circuit boards that has sufficient dielectric properties (dielectric constant, dielectric loss) and physical properties in the 1-10 GHz band, and even in the ultra-high-frequency band above tens of GHz.

[0007] To date, much research has been conducted into glass compositions with low dielectric properties for use in PCBs, and various types of low-dielectric glass compositions have been proposed. For example, the glass composition range for low-dielectric glass is 60-68 wt% Si02, 7-12 wt% B20, and 9-14 wt% Al20. Such glass compositions contain high concentrations of Si02, which can increase viscosity and make glass fiber emanations difficult. Adding high concentrations of alkali ions to lower viscosity can also result in poor dielectric properties.

[0008] Another example is low-dielectric glass with a composition range of 50-60 wt% Si02, 15-25 wt% B203, 10-18 wt% Al203, and 5-12 wt% Ca0+Mg0. This type of composition contains a large amount of B203, which can lead to various problems, such as poor water resistance, the generation of many bubbles during the melting process for glass production, or poor mechanical strength, making it necessary to use additional additives or optimize the composition.

[0009] In order to be used as a low dielectric glass material for glass fibers used in PCBs, various physical properties such as dielectric properties, viscosity, micro-bubble properties, and thermal stability must be ensured.

[0010] More specifically, to be used as glass fiber material for PCB, signal transmission loss must be low, and for this to happen, the glass material's dielectric constant and dielectric loss must be sufficiently low. Glass fiber glass materials used for PCB generally have a dielectric constant of 4.9 or less and a dielectric loss of 0.005 or less.

[0011] In addition, the low-dielectric glass material used in PCBs must be able to be manufactured into glass fibers with diameters of several micrometers to several tens of micrometers through a spinning process. For this to happen, the viscosity of the glass must be low enough and there must be no microscopic bubbles in the glass.

[0012] If the glass's viscosity is not low enough, the temperature must be increased, shortening the lifespan of platinum bushing modules and making it difficult to control the glass fiber diameter and achieve high-speed radiation. Furthermore, the glass must be easy to remove any bubbles (or microbubbles). These bubbles can cause the glass fiber to break during the radiation process. Conventional techniques use fining materials such as As2S3, Sb2O3, and Na2S04 to remove bubbles, but these materials can either deteriorate the glass's dielectric properties or become toxic. Furthermore, for glass fiber radiation to be successful, the glass must have sufficient thermal stability. If the glass's thermal stability is poor, crystallization (devitrification) occurs during the radiation process, resulting in the glass fiber breaking, or the bushing holes becoming clogged, making continuous glass fiber production impossible.

[0013] Low-dielectric glass compositions can be used not only as materials for glass fibers but also as materials for glass substrates. Recently, PCB technology that facilitates high integration and large area has been required. To achieve this, fine redistribution layers (RDLs) and LS values ​​must be realized. Glass substrates have the advantages of superior thermal properties, less distortion, and excellent flatness compared to CCL-based PCB materials, making it possible to manufacture high-performance PCBs. To manufacture high-performance PCBs, the materials used must have low viscosity and be easily fabricated in the form of glass substrates. Therefore, to be used in glass substrates for PCBs, it is necessary to secure glass material technology that not only has excellent dielectric and thermal properties, but also physical properties that allow for easy fabrication in large areas.

[0014] In addition, the low-dielectric glass material used in PCBs must have excellent flatness through post-processing and be easy to fabricate into glass substrates with thicknesses of several hundred micrometers to several millimeters. To achieve this, the viscosity of the glass must be low enough that there are no microscopic bubbles in the glass.

[0015] The present invention aims to solve the problems of the prior art and provide a glass material, glass fiber and glass substrate technology that has low dielectric properties as well as excellent viscosity, fine bubble properties and thermal stability. [Prior art documents] [Patent documents]

[0016] [Patent Document 1] U.S. Patent 9,556,060B2 Summary of the Invention [Problem to be solved by the invention]

[0017] The present invention aims to solve various problems of the prior art by providing an oxide-based glass composition having low glass viscosity, easy radiation, excellent microbubble characteristics, and low dielectric constant and dielectric loss, and a glass fiber technology using the same. The present invention also aims to provide a glass substrate technology having low viscosity, thin thickness, excellent flatness, excellent microbubble characteristics, and low dielectric constant and dielectric loss, which can easily be manufactured into a substrate.

[0018] The objects of the present invention are not limited to the objects mentioned above, and other objects not mentioned above will be clearly understood from the following description. [Means for solving the problem]

[0019] To achieve the above object, a low dielectric glass composition according to one embodiment of the present invention includes silica (SiO2), boron trioxide (B2O3), aluminum oxide (Al2O3), and tellurium oxide (TeO2).

[0020] The low dielectric glass composition may further include one or more selected from the group consisting of magnesium oxide (MgO), calcium oxide (CaO), barium oxide (BaO), and strontium oxide (SrO).

[0021] The low dielectric glass composition may further include one or more selected from the group consisting of lithium oxide (Li2O), sodium (Na2O), and potassium oxide (K2O).

[0022] The low dielectric glass composition may further include one or more selected from the group consisting of phosphorus pentoxide (P2O5), titanium oxide (TiO2), fluorine (F2), zinc oxide (ZnO), gallium oxide (Ga2O3), and indium oxide (In2O3).

[0023] The low dielectric glass composition may be 50.0 to 81.0 mol% silica (SiO2), 12.0 to 30.0 mol% boron trioxide (B2O3), 3.0 to 15.0 mol% aluminum oxide (Al2O3), and 0.1 to 10.0 mol% tellurium oxide (TeO2).

[0024] The low dielectric glass composition may have a dielectric constant of 4.9 or less and a softening temperature of 810° C. or less.

[0025] Furthermore, a low dielectric glass composition according to an embodiment of the present invention includes silica (SiO2), boron trioxide (B2O3), aluminum oxide (Al2O3), and germanium oxide (GeO2).

[0026] The low dielectric glass composition may further include one or more selected from the group consisting of magnesium oxide (MgO), calcium oxide (CaO), barium oxide (BaO), and strontium oxide (SrO).

[0027] The low dielectric glass composition may further include one or more selected from the group consisting of lithium oxide (Li2O), sodium (Na2O), and potassium oxide (K2O).

[0028] The low dielectric glass composition may further include one or more selected from the group consisting of phosphorus pentoxide (P2O5), titanium oxide (TiO2), fluorine (F2), zinc oxide (ZnO), gallium oxide (Ga2O3), and indium oxide (In2O3).

[0029] The low dielectric glass composition may be 50.0 to 81.0 mol% silica (SiO2), 12.0 to 30.0 mol% boron trioxide (B2O3), 3.0 to 15.0 mol% aluminum oxide (Al2O3), and 0.1 to 10.0 mol% germanium oxide (GeO2).

[0030] The low dielectric glass composition may have a dielectric constant of 4.9 or less and a softening temperature of 810° C. or less.

[0031] Furthermore, a low dielectric glass composition according to an embodiment of the present invention includes silica (SiO2), boron trioxide (B2O3), aluminum oxide (Al2O3), tellurium oxide (TeO2), and germanium oxide (GeO2).

[0032] The low dielectric glass composition may further include one or more selected from the group consisting of magnesium oxide (MgO), calcium oxide (CaO), barium oxide (BaO), and strontium oxide (SrO).

[0033] The low dielectric glass composition may further include one or more selected from the group consisting of lithium oxide (Li2O), sodium (Na2O), and potassium oxide (K2O).

[0034] The low dielectric glass composition may further include one or more selected from the group consisting of phosphorus pentoxide (P2O5), titanium oxide (TiO2), fluorine (F2), zinc oxide (ZnO), gallium oxide (Ga2O3), and indium oxide (In2O3).

[0035] The low dielectric glass composition may be 50.0 to 81.0 mol% silica (SiO2), 12.0 to 30.0 mol% boron trioxide (B2O3), 3.0 to 15.0 mol% aluminum oxide (Al2O3), 0.1 to 8.0 mol% tellurium oxide (TeO2), and 0.1 to 8.0 mol% germanium oxide (GeO2).

[0036] The low dielectric glass composition may have a dielectric constant of 4.9 or less and a softening temperature of 810° C. or less.

[0037] Also, a glass fiber according to an embodiment of the present invention includes the low dielectric glass composition.

[0038] Furthermore, a glass substrate according to an embodiment of the present invention includes the low dielectric glass composition. [Effects of the Invention]

[0039] The glass composition according to the present invention has low viscosity, making the glass fiber spinning process or glass substrate manufacturing process easy, and has excellent microbubble characteristics, while at the same time having low dielectric constant and dielectric loss. The glass composition according to the present invention can be used in glass fiber or glass substrate for printed circuit boards, which require low dielectric properties, high mechanical strength, and low thermal expansion properties. [Brief explanation of the drawings]

[0040] [Figure 1] 1 is a graph showing the dielectric constant (Dk) and dielectric loss (Df) characteristics of glass compositions according to comparative examples of the present invention. [Figure 2] 1 is a graph showing the dielectric constant (Dk) and dielectric loss (Df) characteristics in the 10 MHz to 1 GHz band of a low dielectric constant maintaining composition according to an embodiment of the present invention. [Figure 3] 1 is a graph showing the dielectric constant (Dk) and dielectric loss (Df) characteristics in the 10 MHz to 1 GHz band of a low dielectric constant maintaining composition according to an embodiment of the present invention. [Figure 4]1 is a graph showing the dielectric constant (Dk) and dielectric loss (Df) characteristics in the 10 MHz to 1 GHz band of a low dielectric constant maintaining composition according to an embodiment of the present invention. [Figure 5] 1 is a graph showing the dielectric constant (Dk) and dielectric loss (Df) characteristics in the 10 MHz to 1 GHz band of a low dielectric constant maintaining composition according to an embodiment of the present invention. [Figure 6] 1 is a view showing an SEM image of a glass fiber manufactured from a low dielectric glass composition according to an embodiment of the present invention. [Figure 7] 1 is a photographic image of a glass substrate manufactured using a low dielectric glass composition according to an embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0041] Although the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein, the present invention will be described in detail below so that those skilled in the art can easily practice the present invention.

[0042] The dielectric properties of glass materials can be explained by the Clausius-Mossotti equation as shown in Equation 1 below.

[0043]

number

[0044] In the above formula 1, ε and V m , α T are the dielectric constant (Dk), molar volume, and total polarizability, respectively. The molar volume given by Equation 1 is calculated by the molar mass (MW), density (ρ), and Avogadro's number (N) as shown in Equation 2 below. A It is given by a function determined by Avogadro's number.

[0045]

number

[0046] Therefore, according to Equation 1, the dielectric constant is given as a function of the molar volume and total polarizability, and generally, the dielectric constant decreases as the molar volume increases and the total polarizability decreases. Since the molar volume is also given as a function of the molar mass and density, when a specific component is added to glass, the total polarizability, molar volume, molar mass, and density are simultaneously affected, and therefore the dielectric constant is affected by a complex of factors.

[0047] In glass materials, polarizability has a significant effect on dielectric constant properties and is given by the sum of electronic polarization, ionic polarization, dipolar polarization, orientational polarization, interfacial polarization, and space charge polarization, with the type of polarization that affects polarizability differing depending on the frequency band.

[0048] Frequency range is THz band (10 12 ~10 15 Hz), the dielectric properties are determined by electronic polarization. 6 ~10 12In the frequency range of 100 Hz, dielectric properties are determined by electronic and ionic polarization. Therefore, glass materials can have different properties depending on the frequency band, and it is necessary to design and optimize a glass composition that suits the frequency band. In addition, ionic polarization is determined by the sum of cation and anion polarization, and in the case of oxide-based glass compositions, it is greatly affected by oxide ion polarization. Therefore, when designing a low-dielectric glass composition, it is necessary to consider the combined effects and analyze the properties.

[0049] A low dielectric glass composition according to one embodiment of the present invention includes silica (SiO2), boron trioxide (B2O3), aluminum oxide (Al2O3), and tellurium oxide (TeO2).

[0050] The low dielectric glass composition may further include one or more selected from the group consisting of magnesium oxide (MgO), calcium oxide (CaO), barium oxide (BaO), and strontium oxide (SrO).

[0051] The low dielectric glass composition may further include one or more selected from the group consisting of lithium oxide (Li2O), sodium (Na2O), and potassium oxide (K2O).

[0052] The low dielectric glass composition may further include one or more selected from the group consisting of phosphorus pentoxide (P2O5), titanium oxide (TiO2), and fluorine (F2).

[0053] The low dielectric glass composition may further include zinc oxide (ZnO), gallium oxide (Ga2O3), and indium oxide (In2O3).

[0054] The low dielectric glass composition may be 50.0 to 81.0 mol% silica (SiO2), 12.0 to 30.0 mol% boron trioxide (B2O3), 3.0 to 15.0 mol% aluminum oxide (Al2O3), and 0.1 to 10.0 mol% tellurium oxide (TeO2).

[0055] The low dielectric glass composition may have a dielectric constant of 4.9 or less and a softening temperature of 810° C. or less.

[0056] Furthermore, a low dielectric glass composition according to an embodiment of the present invention includes silica (SiO2), boron trioxide (B2O3), aluminum oxide (Al2O3), and germanium oxide (GeO2).

[0057] The low dielectric glass composition may further include one or more selected from the group consisting of magnesium oxide (MgO), calcium oxide (CaO), barium oxide (BaO), and strontium oxide (SrO).

[0058] The low dielectric glass composition may further include one or more selected from the group consisting of lithium oxide (Li2O), sodium (Na2O), and potassium oxide (K2O).

[0059] The low dielectric glass composition may further include one or more selected from the group consisting of phosphorus pentoxide (P2O5), titanium oxide (TiO2), and fluorine (F2).

[0060] The low dielectric glass composition may further include zinc oxide (ZnO), gallium oxide (Ga2O3), and indium oxide (In2O3).

[0061] The low dielectric glass composition may be 50.0 to 81.0 mol% silica (SiO2), 12.0 to 30.0 mol% boron trioxide (B2O3), 3.0 to 15.0 mol% aluminum oxide (Al2O3), and 0.1 to 10.0 mol% germanium oxide (GeO2).

[0062] The low dielectric glass composition may have a dielectric constant of 4.9 or less and a softening temperature of 810° C. or less.

[0063] Furthermore, a low dielectric glass composition according to an embodiment of the present invention includes silica (SiO2), boron trioxide (B2O3), aluminum oxide (Al2O3), tellurium oxide (TeO2), and germanium oxide (GeO2).

[0064] The low dielectric glass composition may further include one or more selected from the group consisting of magnesium oxide (MgO), calcium oxide (CaO), barium oxide (BaO), and strontium oxide (SrO).

[0065] The low dielectric glass composition may further include one or more selected from the group consisting of lithium oxide (Li2O), sodium (Na2O), and potassium oxide (K2O).

[0066] The low dielectric glass composition may further include one or more selected from the group consisting of phosphorus pentoxide (P2O5), titanium oxide (TiO2), and fluorine (F2).

[0067] The low dielectric glass composition may further include zinc oxide (ZnO), gallium oxide (Ga2O3), and indium oxide (In2O3).

[0068] The low dielectric glass composition may be 50.0 to 81.0 mol% silica (SiO2), 12.0 to 30.0 mol% boron trioxide (B2O3), 3.0 to 15.0 mol% aluminum oxide (Al2O3), 0.1 to 8.0 mol% tellurium oxide (TeO2), and 0.1 to 8.0 mol% germanium oxide (GeO2).

[0069] The low dielectric glass composition may have a dielectric constant of 4.9 or less and a softening temperature of 810° C. or less.

[0070] Silica (SiO2) is an essential glass former for forming the glass network. As a glass component, silica (SiO2) is an important component for vitrification, thermal stability, excellent mechanical properties, and low thermal expansion of glass, as well as for ensuring that glass has low dielectric constant and dielectric dissipation factor.

[0071] More specifically, if the content of the silica (SiO2) component is too low, the dielectric constant of the glass increases, which can cause a problem of reducing the mechanical strength of the glass, while if the content of the silica (SiO2) component is too high, the viscosity of the glass increases, which can make it difficult to homogenize during the melting process and make it difficult to form glass fibers during the spinning process.

[0072] Therefore, the content of the silica (SiO2) component in the low dielectric glass composition is preferably in the range of 50 to 68 mol%, more preferably in the range of 52 to 68 mol% to ensure low dielectric properties and prevent excessive increase in viscosity, and more preferably in the range of 54 to 62 mol% to ensure the mechanical properties of the glass and facilitate molding and glass fiber spinning.

[0073] The boron trioxide (B2O3) is an important component in lowering the viscosity of glass to facilitate the glass melting process and enable the glass fiber emanating process at a low temperature, thereby allowing the low dielectric glass composition to have low dielectric constant and dielectric loss characteristics.

[0074] More specifically, if the content of the boron trioxide (B2O3) component is too low, it is difficult to ensure sufficiently low dielectric constant and dielectric loss characteristics, and the desired viscosity of the glass composition containing silica (SiO2) increases, which can cause problems such as difficulty in melting and glass fiber sintering. On the other hand, if the content of the boron trioxide (B2O3) component is too high, the moisture resistance of the glass can be weakened, which can cause bubbles to form during the sintering process, or the mechanical strength can be weakened, which can cause problems such as an increase in the thermal expansion coefficient of the glass.

[0075] Therefore, the content of the boron trioxide (B2O3) component in the low dielectric glass composition is preferably in the range of 12 to 30 mol%, more preferably in the range of 15 to 28 mol% to reduce the viscosity of the glass and prevent a decrease in mechanical strength, and even more preferably in the range of 18 to 27 mol% to sufficiently reduce the viscosity of the glass and ensure moisture resistance.

[0076] The aluminum oxide (Al2O3) acts as a glass intermediate, improving the stability of glass and facilitating vitrification, preventing crystallization, devitrification, and phase separation during the glass melting and glass fiber elongation processes.Also, the aluminum oxide (Al2O3) controls the viscosity of glass within an appropriate range, improving its mechanical strength.

[0077] More specifically, if the content of aluminum oxide (Al2O3) is too low, the vitrification stability decreases, crystallization (devitrification) and phase separation easily occur, and it may be difficult to ensure sufficient mechanical strength. On the other hand, if the content of aluminum oxide (Al2O3) is too high, the dielectric constant increases, the thermal stability of the glass deteriorates, and the viscosity of the glass in the molten state becomes too high, making it difficult to emanate glass fibers.

[0078] Therefore, the content of the aluminum oxide (Al2O3) component in the glass composition is preferably in the range of 3 to 15 mol%, more preferably in the range of 4 to 13 mol% to prevent crystallization of the glass and increase in viscosity, and even more preferably in the range of 5 to 11 mol% to ensure mechanical strength and prevent an increase in dielectric constant.

[0079] The tellurium oxide (TeO2) used in the present invention is a component that reduces the viscosity of glass, facilitating glass fiber emanations. Tellurium oxide (TeO2) also has a fining effect and functions to remove microbubbles that may form in glass during the glass melting process. In conventional glassmaking, materials such as As2S3, Sb2O3, and Na2S04 have been used to remove microbubbles. These materials are either toxic or have the disadvantage of increasing the dielectric loss or permittivity of the glass. In contrast, the tellurium oxide (TeO2) used in the present invention has the advantages of adjusting viscosity and removing microbubbles, while also lowering or not significantly increasing the permittivity and dielectric loss. Therefore, the tellurium oxide (TeO2) added in the present invention can improve the thermal and dielectric properties of glass compared to glass without tellurium oxide.

[0080] Therefore, the content of the tellurium oxide (TeO2) component in the glass composition is preferably in the range of 0.1 to 8 mol%, more preferably in the range of 0.2 to 6 mol% to adjust viscosity and ensure microbubble removal, and more preferably in the range of 0.3 to 3 mol% to ensure low dielectric properties and sufficient glass safety due to the composition.

[0081] The germanium oxide (GeO2) contained in the low dielectric glass composition according to one embodiment of the present invention is a component that reduces the viscosity of the glass and facilitates glass fiber emanation. Furthermore, germanium oxide (GeO2) has a fining effect and can remove microbubbles that may occur in the glass during the glass melting process. As a glass former, germanium oxide (GeO2) is characterized by forming a network structure in the glass, similar to silica. Germanium oxide (GeO2), a component of the oxide-based glass composition with low dielectric properties according to the present invention, not only controls the viscosity of the glass and fins it, but also reduces or does not significantly increase the dielectric constant and dielectric loss. Therefore, germanium oxide (GeO2) added according to the present invention can improve the thermal and dielectric properties compared to glasses without germanium oxide.

[0082] Therefore, the content of the germanium oxide (GeO2) component in the low dielectric glass composition is preferably in the range of 0.1 to 8 mol%, more preferably in the range of 0.2 to 6 mol% to adjust the viscosity and ensure the effect of removing microbubbles, and more preferably in the range of 0.3 to 3 mol% to ensure low dielectric properties and sufficient glass safety due to the composition.

[0083] Furthermore, for the purpose of the present invention, tellurium oxide and germanium oxide can be simultaneously incorporated into a low-dielectric glass composition having low dielectric properties. In the oxide-based composition having low dielectric properties, tellurium oxide can effectively reduce the viscosity of the glass and provide a fining effect by removing microbubbles. However, if a glass composition containing silica as a major component contains more than a certain amount of tellurium oxide, the safety of the glass may be compromised depending on the composition. On the other hand, germanium oxide (GeO2) is a glass network component having a structure similar to silica (SiO2) and has superior glass safety compared to tellurium oxide. Therefore, the simultaneous incorporation of tellurium oxide (TeO2) and germanium oxide (GeO2) into glass can provide glass fining and microbubble removal effects while ensuring glass safety.

[0084] Therefore, the contents of the tellurium oxide (TeO2) and germanium oxide (GeO2) components in the glass composition are preferably in the ranges of 0.1 to 8 mol% and 0.1 to 8 mol%, respectively. More preferably, to ensure the thermal stability and mechanical strength of the glass depending on the composition, the contents of the tellurium oxide (TeO2) and germanium oxide (GeO2) components may be in the ranges of 0.2 to 5 mol% and 0.2 to 5 mol%, respectively. Even more preferably, to ensure the low thermal expansion characteristics of the glass, the contents of the tellurium oxide (TeO2) and germanium oxide (GeO2) components may be in the ranges of 0.3 to 3 mol% and 0.3 to 3 mol%, respectively.

[0085] Also, a glass fiber according to an embodiment of the present invention includes the low dielectric glass composition.

[0086] More specifically, the glass fiber according to one embodiment of the present invention may be a glass fiber made from a low dielectric glass composition including silica (SiO2), boron trioxide (B2O3), aluminum oxide (Al2O3), and tellurium oxide (TeO2).

[0087] Alternatively, the glass fiber according to one embodiment of the present invention may be a glass fiber made from a low dielectric glass composition including silica (SiO2), boron trioxide (B2O3), aluminum oxide (Al2O3), and germanium oxide (GeO2).

[0088] Alternatively, the glass fiber according to one embodiment of the present invention may be a glass fiber made from a low dielectric glass composition having glass components including silica (SiO2), boron trioxide (B2O3), aluminum oxide (Al2O3), tellurium oxide (TeO2), and germanium oxide (GeO2).

[0089] Furthermore, a glass substrate according to an embodiment of the present invention includes the low dielectric glass composition.

[0090] More specifically, the glass substrate according to a preferred embodiment of the present invention may be a glass substrate manufactured from a low dielectric glass composition having glass components including silica (SiO2), boron trioxide (B2O3), aluminum oxide (Al2O3), and tellurium oxide (TeO2).

[0091] Alternatively, the glass substrate according to an embodiment of the present invention may be a glass substrate manufactured from a low dielectric glass composition having glass components including silica (SiO2), boron trioxide (B2O3), aluminum oxide (Al2O3), and germanium oxide (GeO2).

[0092] Alternatively, the glass substrate according to an embodiment of the present invention may be a glass substrate manufactured from a low dielectric glass composition having glass components including silica (SiO2), boron trioxide (B2O3), aluminum oxide (Al2O3), tellurium oxide (TeO2), and germanium oxide (GeO2).

[0093] The present invention will be described in more detail with reference to the following examples, which are merely examples for understanding the present invention and are not intended to limit the scope of the present invention.

[0094] Example 1. Low dielectric glass manufacturing Low dielectric glass compositions having the compositions shown in Table 1 below were prepared and then mixed and pulverized in a ball mill at 150 rpm for 12 hours to produce a mixture. The prepared mixture was heated in an electric furnace at a melting temperature of 1550-1650°C for 2-3 hours to vitrify it to produce a molten material. The molten material was then cast into a brass mold preheated to 650°C, maintained at around the glass transition temperature for 4-8 hours to relieve residual stress, and then slowly cooled to room temperature (25°C) to produce low dielectric glass.

[0095] [Table 1]

[0096] Experimental example 1. The properties of the low dielectric glass prepared under the conditions of Example 1 were analyzed and summarized in Table 2 below.

[0097] [Table 2]

[0098] In Table 2, the bubble characteristics are indicated by 0, △, and X, which respectively indicate a large amount of bubbles (0), a small amount of bubbles (△), and almost no bubbles (X).

[0099] Referring to Table 2, the low dielectric glass manufactured from the low dielectric glass composition of Composition 1 in Example 1 exhibits excellent dielectric properties with a dielectric constant of 4.84 at 1 GHz and a dielectric loss of 0.0047. Also, the dielectric constant and dielectric loss at 28 GHz are 4.88 and 0.0046, respectively, showing excellent properties. The tellurium cation polarizability (Te 3+ :5.23A 3 ) is silicon (Si 4+ :0.87A 3 ) and other glass components (Al 3+ :0.79A 3 , B 3+ :0.05A 3 , Ca2+ :3.16A 3 , Mg 2+ :1.32A 3 ), the glass composition according to the present invention exhibits low dielectric constant characteristics in the MHz to GHz band due to the tellurium content. 4+ This is because the large tellurium content (0.89A) causes oxide ion polarizability and molar volume changes to decrease the dielectric constant, fully offsetting the increase in dielectric constant due to cation polarizability. Furthermore, the softening temperature of the glass, as analyzed using thermo-mechanical analysis (TMA), was 747°C, demonstrating excellent performance. This is significantly lower than the softening temperature of commonly used low-k glass (up to 850°C). The softening temperature, which was approximately 100°C lower than that of commonly used glass, indicates that the inclusion of TeO2 changes the bonding structure of the glass, thereby significantly improving the viscosity characteristics of the glass. In conventional oxide-based glass compositions, the inclusion of tellurium increases the refractive index. In contrast, the inclusion of tellurium in the glass composition of the present invention exhibits distinct characteristics, such as reduced dielectric constant and dielectric loss in the MHz to GHz bands.

[0100] Also, referring to Table 2, the low dielectric glass prepared from the low dielectric glass composition of Composition 2 in Example 1 exhibited excellent dielectric properties, with a 1 GHz dielectric constant of 4.78 and a dielectric loss of 0.0053. This is due to the germanium cation polarizability (Ge 4+ :1.63A 3 Although the ionic radius (Ge) of the glass composition according to the present invention is much higher than the cationic polarizability of silicon and other glass components, the glass composition exhibits low dielectric constant characteristics in the MHz to GHz band due to the inclusion of germanium. 4+ This is because the large germanium content (0.44A) caused the oxide ion polarizability and molar volume change to decrease the dielectric constant.

[0101] Also, referring to Table 2, the low dielectric glass prepared from the low dielectric glass composition of composition 3 in Example 1 exhibited excellent dielectric properties, with a 1 GHz dielectric constant of 4.71 and a dielectric loss of 0.0025. This shows that the glass composition containing both tellurium oxide and germanium oxide (composition 3) can induce better dielectric properties than glass compositions containing only tellurium oxide or germanium oxide.

[0102] Furthermore, referring to Table 2, low dielectric glasses manufactured from the low dielectric glass compositions of compositions 5 and 6 in Example 1 were compared with a comparative example (low dielectric glass manufactured from the low dielectric glass composition of composition 4). Although compositions 5 and 6 contained 0.5 mol% Na2O compared to the comparative example, it was confirmed that the density and dielectric constant (Dk@1GHz) did not increase significantly compared to the comparative glass without Na2O. It was also confirmed that the number of microbubbles contained in the glass was significantly reduced by the inclusion of GeO2 and TeO2.

[0103] Also, referring to Table 2, low-k glass prepared from the low-k glass compositions of compositions 8 and 9 in Example 1 was compared with the comparative example (low-k glass prepared from the low-k glass composition of composition 7). It was confirmed that compositions 8 and 9, compared to the comparative example, contain GeO2 and TeO2, respectively, improving viscosity and microbubble characteristics while maintaining density and dielectric constant (Dk@1GHz) at similar levels to the comparative example glass. The relatively high dielectric loss (Dk@1GHz=~0.02) in compositions 7 (comparative example), 8, and 9 is due to the high Na2O content of 3 mol%. This indicates that too much Na2O, which is used to reduce viscosity and ensure glass stability, cannot be used, and it is necessary to secure glass components and matrix composition technology that can replace these functions.

[0104] Furthermore, referring to Table 2, low-k glass made from low-k glass compositions of compositions 11 and 12 (compositions not containing MgO) in Example 1 was compared with low-k glass made from a low-k glass composition of Comparative Example (composition 10). It can be seen that compositions 11 and 12 contain GeO2 and TeO2, respectively, compared to the Comparative Example, improving viscosity and microbubble characteristics, and even lowering the dielectric constant (Dk@1GHz) compared to the Comparative Example. It was also confirmed that the inclusion of GeO2 and TeO2 somewhat reduced the dielectric loss (Df@1GHz). The relatively high dielectric loss (Dk@1GHz = 0.0079-0.0093) in compositions 10 (Comparative Example), 11, and 12 is due to the high Na2O content of 1 mol%. This indicates that excessive Na2O cannot be used in low-k glass.

[0105] Also, referring to Table 2, low dielectric glasses prepared from low dielectric glass compositions of compositions 14 and 15 (compositions not containing MgO and CaO) in Example 1 were compared with a low dielectric glass prepared from a low dielectric glass composition of composition 13 in Comparative Example. It was confirmed that compositions 14 and 15 contained GeO2 and TeO2, respectively, which improved viscosity and microbubble properties compared to the Comparative Example, while maintaining similar densities.

[0106] Also, referring to Table 2, low dielectric glasses prepared from low dielectric glass compositions of compositions 17 and 18 (compositions not containing MgO) in Example 1 were compared with a low dielectric glass prepared from a low dielectric glass composition of composition 16 (composition 16). It was confirmed that compositions 17 and 18 contained GeO2 and TeO2, respectively, compared to the comparative example, and thus improved viscosity and microbubble properties, and that the density was lower than or maintained at a similar level to the comparative example glass.

[0107] Also, referring to Table 2, low dielectric glasses prepared from low dielectric glass compositions of compositions 19 and 20 (compositions not containing MgO) in Example 1 were compared with a comparative example (low dielectric glass prepared from a low dielectric glass composition of composition 16). It can be seen that compositions 19 and 20 contain TeO2, which significantly improves viscosity and microbubble properties compared to the comparative example, and the density is not significantly increased compared to the comparative example glasses.

[0108] In addition, it was confirmed that the glass composition prepared in Example 1 according to the present invention had sufficient thermal stability as a result of heat treatment around the liquidus temperature and fiber forming temperature.

[0109] Example 2. Low dielectric glass manufacturing A low dielectric glass composition having the composition shown in Table 3 below was prepared, and then a low dielectric glass was manufactured using the same process as in Example 1.

[0110] [Table 3]

[0111] Experimental example 2. The properties of the low dielectric glass prepared under the conditions of Example 2 were analyzed and summarized in Table 4 below.

[0112] [Table 4]

[0113] In Table 4, the bubble characteristics are indicated by 0, △, and X, which respectively indicate a large amount of bubbles (0), a small amount of bubbles (△), and almost no bubbles (X).

[0114] Referring to Table 4, it was confirmed that the low dielectric glass prepared from the low dielectric glass composition of composition 21 in Example 2 had a density as low as 2.311, a dielectric constant and a dielectric loss at 1 GHz of 4.91 and 0.0051, respectively, and a dielectric constant and a dielectric loss at 28 GHz of 4.84 and 0.00418, respectively, and had relatively excellent dielectric properties.

[0115] Furthermore, referring to Table 4, it was confirmed that the low dielectric glass prepared from the low dielectric glass composition of composition 22 in Example 2 had excellent dielectric properties, with a density as low as 2.325, and a dielectric constant and dielectric loss at 1 GHz of 4.79 and 0.0051, respectively.

[0116] Also, referring to Table 4, the low dielectric glasses made from the low dielectric glass compositions of compositions 24 to 29 in Example 2 were compared with the low dielectric glass made from the low dielectric glass composition of composition 23 in Comparative Example. As shown in Table 4, the density of compositions 24 to 29 increased from 0.25 to 1.5 mol% with increasing GeO2 content, up to 2.359 g / cm3. 3 to 2.380 g / cm 3It can be seen that the dielectric constant (Dk@1GHz) gradually increases from 4.88 to 4.81 compared to 4.89 for the comparative glass. In particular, the dielectric loss (Df@1GHz) was 0.0058-0.0068, which was lower than the comparative glass. These results demonstrate that GeO2 is effective in improving the dielectric properties of glass in the GHz range. In existing glass compositions used for optical applications, GeO2 is used to increase the refractive index of glass in the THz range. Furthermore, in existing glass compositions, the inclusion of GeO2 in the THz range generally increases optical loss. However, unlike existing technology, the glass composition containing GeO2 according to the present invention exhibits the aforementioned effects of lowering the dielectric constant and dielectric loss in the MHz to GHz range. Furthermore, it can be seen that as the GeO2 content increases, the softening temperature of the glass decreases steadily from 788°C to 753°C, lower than the comparative glass. It can be seen that the inclusion of GeO2 reduces the viscosity of the glass, allowing it to radiate at a relatively low temperature, ensuring ease of radiation.It can also be seen that it has excellent properties with a coefficient of thermal expansion (CTE) of 3.53~3.83ppm / ℃.

[0117] Figure 1 shows the dielectric constant (Dk) and dielectric loss (Df) characteristics in the 10 MHz to 1 GHz band for composition 23 (Tables 3 and 4) (comparison) of Example 2, which does not contain GeO2. Figures 2 and 3 show the dielectric constant and dielectric loss characteristics in the 10 MHz to 1 GHz band for compositions 27 and 29 (Tables 3 and 4) of Example 2, which contain 1.0 and 1.5 mol% GeO2, respectively, according to embodiments of the present invention. As can be seen from Figures 1 to 3, the dielectric constant and dielectric loss decrease with the inclusion of GeO2. The dielectric constant and dielectric loss characteristics shown in Figures 1 to 3 were measured using the parallel plate method.

[0118] Also, referring to Table 4, the low dielectric glasses made from the low dielectric glass compositions of compositions 30 to 33 in Example 2 were compared with the low dielectric glass made from the low dielectric glass composition of Comparative Example (composition 23). As shown in Table 4, the density of compositions 30 to 33 increased from 2.332 g / cm as the TeO2 content increased from 0.25 mol% to 1.0 mol%. 3 It can be seen that the dielectric constant (Dk@1GHz) gradually increases from 4.85 to 2.351 g / cm3. Conversely, the dielectric constant (Dk@1GHz) continuously decreases from 4.85 to 4.74, compared to 4.89 for the comparative glass. These results demonstrate that TeO2 significantly improves the dielectric constant of glass. In particular, the dielectric loss (Df@1GHz) was 0.0010-0.0015, significantly lower than the dielectric loss of 0.0080 for the comparative glass (composition 23). Existing glass compositions used for optical applications have the characteristic of increasing the refractive index and optical loss in the THz range due to the inclusion of TeO2. In contrast, the glass composition containing TeO2 according to the present invention, which differs from existing technology, has the effect of lowering the dielectric constant and dielectric loss in the MHz to GHz range, as described above. In addition, the softening temperature is much lower than that of the comparative glass, at 781 to 724°C, which is significantly lower than that of the comparative glass that does not contain TeO2, and the thermal expansion coefficient is 4.17 to 3.96 ppm / °C, which confirms that it has excellent properties.

[0119] Figure 4 shows the dielectric constant (Dk) and dielectric loss (Df) characteristics in the 10 MHz to 1 GHz band of glass composition 33 (Tables 3 and 4) containing 1.0 mol% TeO2 according to an embodiment of the present invention. Figure 5 also shows the dielectric constant and dielectric loss characteristics in the 10 MHz to 1 GHz band of glass composition 48 (Tables 5 and 6) containing no TeO2 according to a comparison of the present invention. As can be seen from Figure 4, the inclusion of TeO2 significantly reduces the dielectric constant and dielectric loss. The dielectric constant and dielectric loss characteristics shown in Figure 4 were measured using the parallel plate method.

[0120] Furthermore, referring to Table 4, the low dielectric glasses made from the low dielectric glass compositions of compositions 35 and 36 in Example 2 were compared with the comparative example (low dielectric glass made from the low dielectric glass composition of composition 34). As shown in Table 4, when compositions 35 and 36 contain TeO2, the density is reduced compared to the comparative example glass. It can also be seen that the bubble characteristics are improved compared to the comparative example glass.

[0121] Furthermore, referring to Table 4, the low dielectric glasses made from the low dielectric glass compositions of compositions 37 to 40 in Example 2 were compared with the comparative example (low dielectric glass made from the low dielectric glass composition of composition 34). As shown in Table 4, all of compositions 37 to 40 contained GeO2 and TeO2, and it was found that they had relatively lower densities than the comparative example glasses. It was also confirmed that the bubble characteristics were improved compared to the comparative example glasses.

[0122] In addition, it was confirmed that the glass composition prepared in Example 2 according to the present invention had sufficient thermal stability as a result of heat treatment around the liquidus temperature and fiber forming temperature.

[0123] Experimental example 3. In Example 2, glass having composition 25 in Table 3 was prepared through a glass melting process, and a low dielectric glass fiber was emitted using this at a radiation temperature of 1380°C. In a test emission experiment, emission was possible for more than 3 hours at an emission speed of more than 250 m per minute without being cut, and no crystallization occurred in the glass melt, which was maintained at a high melting temperature for a long period during the emission process.

[0124] Figure 6 shows SEM images of glass fibers spun from glass having composition 25 in Table 3 in Example 2. Figure 6(a) is an SEM image of a glass fiber fabricated using glass having composition 25 in Table 3 in Example 2. Figures 6(b) to 6(d) are enlarged SEM images of different portions of Figure 6(a). Referring to Figures 6(a) to 6(d), the SEM images show the surface of the glass fiber, which is completely free of defects. Measurement of the glass fiber diameter at various locations confirmed that the glass fiber had a uniform diameter of approximately 9.6 μm.

[0125] Example 3. Low dielectric glass manufacturing Low dielectric glass compositions having the compositions shown in Table 5 below were prepared and then mixed and pulverized in a ball mill at 150 rpm for 12 hours to produce a mixture. The prepared mixture was heated in an electric furnace at a melting temperature of 1600-1650°C for 2-3 hours to vitrify it to produce a molten material. The molten material was then cast into a brass mold preheated to 650°C, maintained at around the glass transition temperature for 6-10 hours to relieve residual stress, and then slowly cooled to room temperature (25°C) to produce low dielectric glass.

[0126] [Table 5]

[0127] Experimental example 4. The physical properties of the low dielectric glass prepared under the conditions of Example 3 were analyzed and summarized in Table 6 below.

[0128] [Table 6]

[0129] In Table 6, the bubble characteristics are indicated by 0, △, and X, which respectively indicate a large amount of bubbles (0), a small amount of bubbles (△), and almost no bubbles (X).

[0130] In Table 5, composition 41 is a comparative glass composition for compositions 1 to 3 in Example 1. Referring to Table 6, the glass prepared with composition 41, which is a comparative example, had a dielectric constant of 5.11 at 1 GHz and a dielectric loss of 0.0081, and despite not containing Na2O, exhibited higher dielectric constant and dielectric loss properties than the glasses prepared with compositions 1 to 3 containing TeO2 and GeO2 according to the present invention.

[0131] Furthermore, referring to Table 6, it was confirmed that when compositions 42 to 44 contain TeO2 according to the present invention, the microbubble characteristics are improved compared to the comparative example (composition 41), and the density is lower than that of the comparative example glass or is maintained at a similar level.

[0132] Also, referring to Table 6, it was confirmed that compositions 45 and 46 contain GeO2 and TeO2, respectively, compared to the comparative example (composition 16), and thus have improved microbubble characteristics and significantly lower densities than the comparative example glass.

[0133] Also, referring to Table 6, it was confirmed that composition 47 had a lower density than composition 22, and the 1 GHz dielectric constant and dielectric loss were 4.775 and 0.0045, respectively, which were improved compared to composition 22.

[0134] Furthermore, referring to Table 6, it can be seen that compositions 49 to 52, when containing GeO2, have a slightly higher density than the comparative glass (composition 48), but the dielectric constant and dielectric loss are significantly lower, as shown in Table 6. It can also be seen that the bubble characteristics are improved compared to the comparative glass.

[0135] Furthermore, referring to Table 6, it can be seen that compositions 54 and 55 have a lower density than the comparative glass (composition 53) when GeO2 is included, as shown in Table 6. It can also be seen that the bubble characteristics are significantly improved compared to the comparative glass.

[0136] Furthermore, referring to Table 6, it can be seen that, compared to the comparative example (composition 56), compositions 57 and 58 contain GeO2 according to the present invention, and although the density is slightly increased compared to the comparative example glass when GeO2 is contained, the bubble characteristics are improved.

[0137] In addition, it was confirmed that the glass composition prepared in Example 3 according to the present invention had sufficient thermal stability as a result of heat treatment around the liquidus temperature and fiber forming temperature.

[0138] Experimental Example 5. Recently, there has been a demand for PCB technology that facilitates high integration and large area. To achieve this, a fine redistribution layer (RDL) and LS value must be realized. Compared to CCL-based PCB materials, glass substrates not only have excellent thermal properties and less distortion, but also excellent flatness and physical properties similar to silicon, a semiconductor material, making it easy to create fine structures using etching processes, making it possible to manufacture high-performance PCBs.

[0139] For compositions 1 and 2 in Example 1, glass substrates were prepared as follows.

[0140] Experimental Example 5-1. Production of glass substrate having composition 1 A low-k dielectric composition according to Composition 1 in Example 1 (Table 1, containing 0.5 mol% Te) was prepared using raw materials and then mixed and pulverized in a ball mill at 150 rpm for 12 hours to produce a mixture. The resulting mixture was heated in an electric furnace at a melting temperature of 1550°C for 3 hours to produce a molten material. The molten glass was then poured into a brass mold preheated to 670°C and quickly pressed using a brass cover preheated to the same temperature (670°C). The glass was then maintained near the glass transition temperature for 5 hours to release residual stress, after which it was slowly cooled to room temperature (25°C) to produce a low-k dielectric glass substrate. A photographic image of the resulting glass substrate is shown in Figure 7(a). Referring to FIG. 7(a), it can be seen that a glass substrate having a thickness of 200 μm, a smooth surface, excellent flatness, and no micro-bubbles was produced through the glass melting and pressing process.

[0141] Experimental Example 5-2. Production of glass substrate having composition 2 A low-k dielectric composition according to Composition 2 in Example 1 (Table 1, containing 0.5 mol% Ge) was prepared using raw materials and then mixed and pulverized in a ball mill at 150 rpm for 12 hours to produce a mixture. The resulting mixture was heated in an electric furnace at a melting temperature of 1550°C for 3 hours to produce a molten material. The molten glass was then poured into a brass mold preheated to 670°C and quickly pressed using a brass cover preheated to the same temperature (670°C). The glass was then maintained near its glass transition temperature for 5 hours to relieve residual stress, and then slowly cooled to room temperature (25°C) to produce a low-k dielectric glass substrate. A photograph of the produced glass substrate is shown in Figure 7(b). Referring to Figure 7(b), it can be seen that a glass substrate with a thickness of 250 μm, a smooth surface, and no microbubbles was produced through the glass melting and pressing process.

[0142] In FIG. 7, the low dielectric glass substrate containing TeO2 (FIG. 7(a)) and GeO2 (FIG. 7(b)) according to the present invention is manufactured by a compression bonding process, but it can also be manufactured using various processes such as an extrusion process using a preheated roller, a floating process, and a fusion process.

[0143] Example 4. Low dielectric glass production A low dielectric glass composition having the composition shown in Table 7 below was prepared, and then a low dielectric glass was manufactured using the same process as in Example 3.

[0144] [Table 7]

[0145] Experimental Example 6. The properties of the low dielectric glass prepared under the conditions of Example 4 were analyzed and summarized in Table 8 below.

[0146] [Table 8]

[0147] Tables 7 and 8 show the compositions and corresponding physical properties of low dielectric glass compositions containing additional components according to the present invention as additional examples and experimental examples. It was confirmed that the inclusion of tellurium oxide and germanium oxide improved the dielectric properties of the glass, ensuring sufficient viscosity and fine bubble characteristics. In particular, as seen in compositions 84 to 90, compared to the comparative glass composition (Table 8, composition 84), when the germanium oxide content increased from 0.25 mol% to 1.5 mol%, the dielectric constant continuously decreased and the dielectric loss also continuously improved, resulting in excellent properties of a dielectric constant of 4.71 and a dielectric loss of 0.0025 at 1 GHz.

[0148] In the examples shown in Tables 7 and 8, phosphorus pentoxide (P2O5), titanium oxide (TiO2), and fluorine (F2) are components that improve the viscosity of the glass. However, excessive use can adversely affect the thermal stability of the glass, so it is recommended to use them within 0.05 to 5 mol%. Zinc oxide (ZnO), gallium oxide (Ga2O3), and indium oxide (In2O3) are components that prevent devitrification and improve the thermal stability of the glass. However, excessive use can adversely affect the thermal stability of the glass and increase the dielectric constant, so it is recommended to use them within 0.1 to 3 mol%. Finally, alkali components such as lithium oxide (Li2O), sodium oxide (Na2O), and potassium oxide (K2O) can be used to reduce the viscosity of the glass and improve its thermal stability. However, excessive use can increase the dielectric constant and dielectric loss, so it is recommended to use them within 0.05 to 1.5 mol%.

[0149] Example 5. Low dielectric glass production Low dielectric glass compositions having the compositions shown in Table 9 below were prepared, and then low dielectric glass was manufactured using the same process as in Example 3. For some compositions with a high SiO2 content, the melting temperature was increased to a range of 1650 to 1750°C.

[0150] [Table 9]

[0151] Experimental Example 7. The properties of the low dielectric glass prepared under the conditions of Example 5 were analyzed and summarized in Table 10 below.

[0152] [Table 10]

[0153] Tables 9 and 10 show the compositions and properties of low dielectric glass compositions containing additional components according to the present invention as additional examples and experimental examples. It was confirmed that the inclusion of germanium oxide improved the dielectric properties of the glass, ensuring sufficient viscosity and fine bubble characteristics. As seen in compositions 91 to 93, when the germanium oxide content increased from 1.00 mol% to 4.0 mol%, the 1 GHz dielectric constant decreased continuously from 4.62 to 4.46, and the 1 GHz dielectric loss also improved continuously to 0.0026, demonstrating excellent properties.

[0154] Furthermore, as seen in compositions 95 to 98, when germanium oxide was added at 2.0 mol%, SiO2 was increased to 81.0 mol%, and the combined CaO and MgO content was reduced to less than 10 mol%, the dielectric constant decreased to 4.37 and the loss coefficient was reduced to 0.0031 to 0.0024, demonstrating excellent performance. Furthermore, glass containing tellurium oxide in compositions 99 and 100 exhibited extremely low dielectric constant and excellent microbubble characteristics. When the SiO2 content was increased to 81 mol% and the tellurium oxide content was increased to 2 mol%, the dielectric constant at 1 GHz decreased to 4.29 and the loss coefficient at 1 GHz decreased by 0.0021 degrees.

[0155] In another example, in a glass composition similar to compositions 95 to 98, which simultaneously contains germanium oxide and tellurium oxide, when the SiO2 content is increased to 81.00 mol% and the total amount of CaO and MgO is adjusted to 10 mol% or less, it was confirmed that the glass exhibited a low dielectric constant of 4.50 or less and a low dielectric loss of 0.0030 or less.

[0156] Although the preferred embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and many variations and modifications by those skilled in the art that utilize the basic concept of the present invention defined in the following claims also fall within the scope of the present invention.

Claims

1. Silica (SiO ２ ) and boron trioxide (B ２ 0 ３ ) and aluminum oxide (Al ２ 0 ３ ) and tellurium oxide (Te0 ２ ) A low dielectric glass composition comprising:

2. 2. The low dielectric glass composition according to claim 1, further comprising one or more selected from the group consisting of magnesium oxide (MgO), calcium oxide (CaO), barium oxide (BaO), and strontium oxide (SrO).

3. Lithium oxide (Li ２ O), sodium (Na ２ O) and potassium oxide (K ２ 10. The low dielectric glass composition according to claim 1, further comprising one or more additional components selected from the group consisting of:

4. Phosphorus pentoxide (P20 ５ ), titanium oxide (TiO ２ ), fluorine (F ２ ), zinc oxide (ZnO), gallium oxide (Ga ２ 0 ３ ) and indium oxide (In ２ 0 ３ 2. The low dielectric glass composition according to claim 1, further comprising one or more selected from the group consisting of:

5. Silica (SiO ２ ) 50.0 to 81.0 mol%, boron trioxide (B ２ 0 ３ ) 12.0 to 30.0 mol%, aluminum oxide (Al ２ 0 ３ ) 3.0 to 15.0 mol % and tellurium oxide (Te0 ２ 2. The low dielectric glass composition according to claim 1, wherein the content of ZnO is 0.1 to 10.0 mol %.

6. 2. The low dielectric glass composition according to claim 1, having a dielectric constant of 4.9 or less and a softening temperature of 810°C or less.

7. Silica (SiO ２ ) and boron trioxide (B ２ 0 ３ ) and aluminum oxide (Al ２ 0 ３ ), and germanium oxide (GeO ２ ) A low dielectric glass composition comprising:

8. 8. The low dielectric glass composition according to claim 7, further comprising one or more selected from the group consisting of magnesium oxide (MgO), calcium oxide (CaO), barium oxide (BaO), and strontium oxide (SrO).

9. Lithium oxide (Li ２ O), sodium (Na ２ O) and potassium oxide (K ２ 8. The low dielectric glass composition according to claim 7, further comprising one or more additional components selected from the group consisting of (O).

10. Phosphorus pentoxide (P ２ 0 ５ ), titanium oxide (TiO ２ ), fluorine (F ２ ), zinc oxide (ZnO), gallium oxide (Ga ２ 0 ３ ) and indium oxide (In ２ 0 ３ 8. The low dielectric glass composition according to claim 7, further comprising one or more selected from the group consisting of:

11. Silica (SiO ２ ) 50.0 to 81.0 mol%, boron trioxide (B ２ 0 ３ ) 12.0 to 30.0 mol%, aluminum oxide (Al ２ 0 ３ ) 3.0 to 15.0 mol % and germanium oxide (GeO ２ 8. The low dielectric glass composition according to claim 7, wherein the content of ZnO is 0.1 to 10.0 mol %.

12. 8. The low dielectric glass composition according to claim 7, which has a dielectric constant of 4.9 or less and a softening temperature of 810°C or less.

13. Silica (SiO ２ ) and boron trioxide (B ２ 0 ３ ) and aluminum oxide (Al ２ 0 ３ ) and tellurium oxide (Te0 ２ ), and germanium oxide (GeO ２ ) A low dielectric glass composition comprising:

14. 14. The low dielectric glass composition according to claim 13, further comprising one or more selected from the group consisting of magnesium oxide (MgO), calcium oxide (CaO), barium oxide (BaO), and strontium oxide (SrO).

15. Lithium oxide (Li ２ O), sodium (Na ２ O) and potassium oxide (K ２ The low dielectric glass composition according to claim 13, further comprising one or more additional components selected from the group consisting of (O).

16. Phosphorus pentoxide (P ２ 0 ５ ), titanium oxide (TiO ２ ), fluorine (F ２ ), zinc oxide (ZnO), gallium oxide (Ga ２ 0 ３ ) and indium oxide (In ２ 0 ３ 14. The low dielectric glass composition according to claim 13, further comprising one or more selected from the group consisting of:

17. Silica (SiO ２ ) 50.0 to 81.0 mol%, boron trioxide (B ２ 0 ３ ) 12.0 to 30.0 mol%, aluminum oxide (Al ２ 0 ３ ) 3.0 to 15.0 mol%, tellurium oxide (Te0 ２ ) 0.1 to 8.0 mol % and germanium oxide (Ge0 ２ 14. The low dielectric glass composition according to claim 13, wherein the content of the SiO2 is 0.1 to 8.0 mol %.

18. 14. The low dielectric glass composition according to claim 13, having a dielectric constant of 4.9 or less and a softening temperature of 810°C or less.

19. A glass fiber comprising the low dielectric glass composition according to any one of claims 1 to 6.

20. A glass fiber comprising the low dielectric glass composition according to any one of claims 7 to 12.

21. A glass fiber comprising the low dielectric glass composition according to any one of claims 13 to 18.

22. A glass substrate comprising the low dielectric glass composition according to any one of claims 1 to 6.

23. A glass substrate comprising the low dielectric glass composition according to any one of claims 7 to 12.

24. A glass substrate comprising the low dielectric glass composition according to any one of claims 13 to 18.

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