Method for manufacturing semiconductor devices and apparatus for manufacturing semiconductor devices

Abstract

The present invention provides a method for manufacturing a semiconductor device, comprising: a heating step of raising the temperature of a semiconductor substrate from a predetermined intake temperature to a predetermined film deposition temperature; a film deposition step of depositing a semiconductor layer on the semiconductor substrate at a predetermined film deposition position and at the film deposition temperature; and a cooling step of lowering the temperature of the semiconductor substrate from the film deposition temperature to a predetermined removal temperature. [Solution] In a semiconductor device manufacturing method, in the heating step S100, the semiconductor substrate is moved from the intake position to a heating position different from the film deposition position, and the semiconductor substrate is heated to a first substrate temperature that is higher than the intake temperature and lower than the film deposition temperature. In the cooling step S300, the semiconductor substrate is moved from the film deposition position to a cooling position different from the film deposition position, and the semiconductor substrate is cooled to a second substrate temperature that is higher than the removal temperature and lower than the film deposition temperature.

Description

[Technical Field]

[0001] This invention relates to a method for manufacturing a semiconductor device and an apparatus for manufacturing a semiconductor device. [Background technology]

[0002] As apparatus for depositing semiconductor layers on semiconductor substrates, single-wafer apparatuses (e.g., Patent Documents 1 and 2) and batch apparatuses (e.g., Patent Document 3) are known. [Prior art document] [Patent] [Patent Document 1] Patent No. 5807505 [Patent Document 2] Special Publication No. 2023-540432 [Patent Document 3] Patent No. 5560093 [Overview of the Initiative] [Problems that the invention aims to solve]

[0003] It is desirable to shorten the time required for deposition of the semiconductor layer. [Means for solving the problem]

[0004] In a first embodiment of the present invention, a method for manufacturing a semiconductor device is provided, comprising: a heating step of raising the temperature of a semiconductor substrate from a predetermined intake temperature to a predetermined film deposition temperature; a film deposition step of depositing a semiconductor layer on the semiconductor substrate at the film deposition temperature at a predetermined film deposition position; and a cooling step of lowering the temperature of the semiconductor substrate from the film deposition temperature to a predetermined removal temperature. The heating step and the cooling step may each include at least one of the following steps: in the heating step, moving the semiconductor substrate from the intake position to a heating position different from the film deposition position and raising the temperature of the semiconductor substrate to a first substrate temperature higher than the intake temperature and lower than the film deposition temperature; or in the cooling step, moving the semiconductor substrate from the film deposition position to a cooling position different from the film deposition position and lowering the temperature of the semiconductor substrate to a second substrate temperature higher than the removal temperature and lower than the film deposition temperature.

[0005] In the above-described method for manufacturing a semiconductor device, the heating step and the cooling step may each include at least one of the following steps: in the heating step, moving the semiconductor substrate from a low-temperature heating position to a high-temperature heating position that is hotter than the low-temperature heating position; or in the cooling step, moving the semiconductor substrate from a high-temperature cooling position to a low-temperature cooling position that is colder than the high-temperature cooling position.

[0006] In any of the above methods for manufacturing a semiconductor device, the heating step may include a step of heating the semiconductor substrate by bringing it close to a heating element that has been heated to a predetermined constant temperature.

[0007] In any of the above methods for manufacturing a semiconductor device, the low-temperature heating position may be further away from the heating element for heating the semiconductor substrate than the high-temperature heating position. The low-temperature cooling position may be further away from the heating element for heating the semiconductor substrate than the high-temperature cooling position. The high-temperature heating position may be closer to the heating element than the low-temperature heating position and further away from the heating element than the film deposition position. The high-temperature cooling position may be closer to the heating element than the low-temperature cooling position and further away from the heating element than the film deposition position.

[0008] In any of the above methods for manufacturing a semiconductor device, the heating rate in the heating step may be 30°C / min or more and 1000°C / min or less.

[0009] In any of the above methods for manufacturing a semiconductor device, the cooling rate in the cooling step may be -50°C / min or more and -1000°C / min or less.

[0010] In any of the above methods for manufacturing a semiconductor device, the heating step may include a step of heating a plurality of semiconductor substrates. The cooling step may include a step of cooling a plurality of semiconductor substrates.

[0011] In any of the above methods for manufacturing a semiconductor device, in at least one of the heating step or the cooling step, the plurality of semiconductor substrates located at the heating position may exchange heat with the plurality of semiconductor substrates located at the cooling position.

[0012] In any of the above methods for manufacturing a semiconductor device, the plurality of semiconductor substrates located at the heating position may exchange heat with the plurality of semiconductor substrates located at the cooling position during the period in which a semiconductor layer is being formed on the plurality of semiconductor substrates located at the film formation position.

[0013] In any of the above methods for manufacturing a semiconductor device, the plurality of semiconductor substrates located at the heating position may be heated by heat supplied from the plurality of semiconductor substrates located at the cooling position. The plurality of semiconductor substrates located at the cooling position may be cooled by supplying heat to the plurality of semiconductor substrates located at the heating position.

[0014] In any of the above semiconductor device manufacturing methods, during the heating step, a plurality of semiconductor substrates located at the high-temperature heating position may be heated by heat supplied from a plurality of semiconductor substrates located at the high-temperature cooling position, and a plurality of semiconductor substrates located at the low-temperature heating position, which is colder than the high-temperature heating position, may be heated by heat supplied from a plurality of semiconductor substrates located at the low-temperature cooling position, which is colder than the high-temperature cooling position. During the cooling step, a plurality of semiconductor substrates located at the high-temperature cooling position may be cooled by supplying heat to a plurality of semiconductor substrates located at the high-temperature heating position, and a plurality of semiconductor substrates located at the low-temperature cooling position may be cooled by supplying heat to a plurality of semiconductor substrates located at the low-temperature heating position.

[0015] In any of the above-described methods for manufacturing a semiconductor device, during the heating step, the plurality of semiconductor substrates may be heated from the intake temperature to the first substrate temperature by heat exchange at the heating position, and at the film deposition position, the plurality of semiconductor substrates may be heated from the first substrate temperature to the film deposition temperature by a heating element for heating them.

[0016] In any of the above-described methods for manufacturing a semiconductor device, at least one of the temperature rise of the semiconductor substrate during the heating step at the film deposition location, or the temperature decrease of the semiconductor substrate during the cooling step at the film deposition location, may be 50% or less of the temperature difference between the film deposition temperature and room temperature.

[0017] In any of the above-described methods for manufacturing a semiconductor device, the steps of moving the semiconductor substrate in the heating step and the cooling step may include a step of changing the position of the semiconductor substrate relative to the film deposition position.

[0018] In any of the above-described methods for manufacturing a semiconductor device, the film formation step may include a step of forming the semiconductor layer by proximity sublimation.

[0019] A second embodiment of the present invention provides a semiconductor device manufacturing apparatus comprising: a film deposition chamber for depositing a semiconductor layer on a semiconductor substrate located at a predetermined film deposition position; a heating element for raising the temperature of the semiconductor substrate to a predetermined film deposition temperature in the film deposition chamber; and a distance adjustment unit for changing the distance between the semiconductor substrate and the heating element. The distance adjustment unit may change the distance between the semiconductor substrate and the heating element when the temperature of the semiconductor substrate is higher than a predetermined intake temperature or a predetermined extraction temperature and lower than the film deposition temperature.

[0020] In the semiconductor device manufacturing apparatus described above, the distance adjustment unit may move the semiconductor substrate, which is located at a predetermined intake position, to a heating position that is closer to the heating element than the intake position and further away from the heating element than the film deposition position, thereby raising the temperature of the semiconductor substrate to a first substrate temperature that is higher than the extraction temperature and lower than the film deposition temperature. The distance adjustment unit may also move the semiconductor substrate to a cooling position that is further away from the heating element than the film deposition position, thereby lowering the temperature of the semiconductor substrate to a second substrate temperature that is higher than the extraction temperature and lower than the film deposition temperature.

[0021] In any of the above semiconductor device manufacturing apparatus, the distance adjustment unit may include, in a top view, a rotating element for rotating the semiconductor substrate and a distance changing element for changing the distance between the semiconductor substrate and the heating element.

[0022] Any of the above semiconductor device manufacturing apparatus may be provided with a susceptor for mounting the semiconductor substrate. The susceptor may be circular in shape when viewed from above. The length of the distance-changing element may be 5 times or more and 10 times or less the radius of the susceptor.

[0023] In any of the above semiconductor device manufacturing apparatuses, the thickness of the susceptor may be 70% or more and 100% or less of the thickness of the semiconductor substrate.

[0024] In any of the above-mentioned semiconductor device manufacturing apparatus, the thickness of the susceptor may be 350 μm or more and 500 μm or less.

[0025] In any of the above-described semiconductor device manufacturing apparatus, the heating element may be heated by electromagnetic induction.

[0026] A third aspect of the present invention provides a semiconductor device manufacturing apparatus comprising: a film deposition chamber for depositing semiconductor layers on a plurality of semiconductor substrates at predetermined film deposition positions; a heating element for raising the temperature of the plurality of semiconductor substrates to a predetermined film deposition temperature in the film deposition chamber; and a heat exchange unit for exchanging heat between a plurality of semiconductor substrates at different temperatures.

[0027] In the above-mentioned semiconductor device manufacturing apparatus, a boat for mounting the plurality of semiconductor substrates, The system may also include a load lock chamber for removing the boat on which the plurality of semiconductor substrates, which have been cooled in the heat exchange section, are mounted.

[0028] In any of the above semiconductor device manufacturing apparatuses, a retractable section for storing the boat may be provided. The boat may move between the heat exchange section and the film deposition chamber via the retractable section.

[0029] It should be noted that the above summary of the invention does not enumerate all of its features. Furthermore, subcombinations of these features may also constitute an invention. [Brief explanation of the drawing]

[0030] [Figure 1] This is an example of a cross-section of semiconductor device 300. [Figure 2A] This is an example of a manufacturing method for semiconductor device 300. [Figure 2B] This is an example of a manufacturing method for semiconductor device 300. [Figure 3A] This is an example of a manufacturing apparatus 100 for a semiconductor device 300. [Figure 3B] This is an example of the heating stage S100 in the manufacturing apparatus 100. [Figure 3C] This is an example of the cooling stage S300 in the manufacturing apparatus 100. [Figure 4] This is an example of manufacturing apparatus 500 for the comparative example. [Figure 5] This shows a comparison of the deposition times for semiconductor layers. [Figure 6] This is a modified example of the manufacturing method for the semiconductor device 300. [Figure 7A] This is an example of a manufacturing apparatus 200 for semiconductor device 300. [Figure 7B] This is an example of a heat exchange section 230. [Figure 7C] This is an example of a heat exchange cycle in manufacturing equipment 200. [Figure 8] This is an example of manufacturing apparatus 600 for the comparative example. [Figure 9] This shows a comparison of the deposition times for semiconductor layers. [Figure 10A] This is an example of a manufacturing apparatus 700 for semiconductor device 300. [Figure 10B] This is an example of a manufacturing apparatus 700 for semiconductor device 300. [Figure 11A] This is an example of a manufacturing apparatus 800 for semiconductor device 300. [Figure 11B] This is an example of a manufacturing apparatus 800 for semiconductor device 300. [Figure 12] This is a modified example of the manufacturing apparatus 800 for the semiconductor device 300. [Modes for carrying out the invention]

[0031] The present invention will be described below through embodiments of the invention, but these embodiments are not intended to limit the invention as defined in the claims. Furthermore, not all combinations of features described in the embodiments are necessarily essential to the solution of the invention.

[0032] In this specification, one side of a semiconductor substrate parallel to its depth direction is referred to as "top," and the other side as "bottom." Of the two main surfaces of a substrate, layer, or other component, one surface is referred to as the top surface, and the other surface as the bottom surface. The directions of "top" and "bottom" are not limited to the direction of gravity or the direction in which the semiconductor device is mounted.

[0033] In this specification, technical matters may be described using the Cartesian coordinate axes, the X, Y, and Z axes. The Cartesian coordinate axes merely specify the relative positions of components and do not limit any particular direction. For example, the Z axis does not limit the direction to height relative to the ground. Note that the +Z axis direction and the -Z axis direction are opposite directions. When the sign is not specified and only the Z axis direction is written, it means the direction parallel to the +Z and -Z axes.

[0034] In this specification, the orthogonal axes parallel to the top and bottom surfaces of the semiconductor substrate are defined as the X and Y axes. The axis perpendicular to the top and bottom surfaces of the semiconductor substrate is defined as the Z axis. In this specification, the direction of the Z axis may be referred to as the depth direction. In this specification, the direction parallel to the top and bottom surfaces of the semiconductor substrate, including the X and Y axes, may be referred to as the horizontal direction.

[0035] In each embodiment, an example is shown where the first conductivity type is N-type and the second conductivity type is P-type, but the first conductivity type may be P-type and the second conductivity type may be N-type. In this case, the conductivity types of the substrate, layer, region, etc. in each embodiment will have opposite polarities.

[0036] In this specification, layers or regions prefixed with N or P indicate that electrons or holes are the majority carriers, respectively. Furthermore, the + and - signs attached to N and P indicate higher and lower doping concentrations, respectively, compared to layers or regions without these prefixes.

[0037] Figure 1 shows an example of a cross-section of a semiconductor device 300. Figure 1 is a cross-section of the semiconductor device 300 perpendicular to a plurality of gate trenches 40 arranged in a predetermined arrangement direction. The semiconductor device 300 in this example comprises a substrate layer 30, a semiconductor layer 20 having a source region 12, a base region 14, a contact region 15, a first conductivity type region 16, a second conductivity type region 17, and a drift region 18, an interlayer insulating film 38, gate trenches 40, a front-side electrode 52, and a back-side electrode 24.

[0038] The substrate layer 30 is a substrate made of a semiconductor material. The substrate layer 30 may be a silicon substrate, a silicon carbide substrate, or a compound semiconductor substrate such as gallium nitride. In this example, the substrate layer 30 is a silicon carbide substrate made of N+ type silicon carbide.

[0039] The semiconductor layer 20 is a layer made of a semiconductor material provided on the substrate layer 30. The semiconductor layer 20 may be formed on the substrate layer 30 by epitaxial growth. The semiconductor layer 20 may be formed of the same semiconductor material as the substrate layer 30, or it may be formed of a different semiconductor material. In this example, the semiconductor layer 20 is a silicon carbide semiconductor layer provided on the substrate layer 30 made of silicon carbide. The semiconductor layer 20 has a front surface 21.

[0040] The source region 12 is a region of a first conductivity type provided on the front surface 21 of the semiconductor layer 20. The source region 12 is, for example, of the N+ type. The source region 12 may be in contact with the side wall of the gate trench portion 40. In this example, the source region 12 is provided extending from the side wall of one adjacent gate trench portion 40 to the side wall of the other gate trench portion 40 in the arrangement direction of the gate trench portions 40.

[0041] The source region 12 may be formed by injecting a first-conductivity dopant from the front surface 21 of the semiconductor layer 20. For example, the dopant for forming the source region 12 is phosphorus or nitrogen. In this example, the doping concentration of the source region 12 is higher than the doping concentration of the drift region 18, which will be described later. For example, the doping concentration of the source region 12 is 1 × 10⁻⁶. 18 cm -3 The above is 1 x 10 21 cm -3 The following applies:

[0042] The base region 14 is a second conductivity type region located below the source region 12. The base region 14 is, for example, a P-type. The base region 14 may be provided on the front surface 21 of the semiconductor layer 20 in areas where the source region 12 is not provided on the front surface 21 of the semiconductor layer 20.

[0043] The base region 14 may be formed by epitaxially growing a semiconductor layer 20 above the drift region 18 while doping it with a second-type conductivity dopant. For example, the dopant for forming the base region 14 is aluminum. In this example, the doping concentration of the base region 14 is higher than the doping concentration of the drift region 18. For example, the doping concentration of the base region 14 is 2 × 10⁻⁶. 16 cm -3 The above is 2 x 10 17 cm -3 The following applies:

[0044] The contact region 15 is provided above the drift region 18 and is a region of the second conductivity type with a higher doping concentration than the base region 14. The contact region 15 is, for example, of P+ type. The contact region 15 is provided by extending from the semiconductor layer 20 in the depth direction of the semiconductor layer 20. The contact region 15 is provided at a distance from the gate trench portion 40.

[0045] The contact region 15 may be formed by implanting a dopant of the second conductivity type from the front surface 21 of the semiconductor layer 20. As an example, the dopant for forming the contact region 15 is aluminum or boron. The doping concentration of the contact region 15 may be higher than the doping concentration of the base region 14. As an example, the doping concentration of the contact region 15 is 1×10 19 cm -3 or more and 1×10 20 cm -3 or less.

[0046] The first conductivity type region 16 is a region of the first conductivity type provided above the drift region 18. The first conductivity type region 16 is, for example, of N type. The first conductivity type region 16 in this example is provided from the lower end of the base region 14 to the upper end of the substrate layer 30 in the depth direction of the semiconductor layer 20.

[0047] The first conductivity type region 16 may be formed by epitaxially growing the semiconductor layer 20 above the drift region 18 while doping a dopant of the first conductivity type. As an example, the dopant for forming the first conductivity type region 16 is nitrogen. The doping concentration of the first conductivity type region 16 may be higher than the doping concentration of the drift region 18. As an example, the doping concentration of the first conductivity type region 16 is 1×10 16 cm -3 or more and 1×10 17 cm -3 or less.

[0048] The second conductivity type region 17 is a region of the second conductivity type located above the drift region 18. The second conductivity type region 17 is, for example, P-type. The second conductivity type region 17 is located in the depth direction of the semiconductor layer 20, from the lower end of the contact region 15 to the upper end of the substrate layer 30.

[0049] The second conductivity region 17 may be formed by injecting a second conductivity dopant from above the first conductivity region 16. For example, the dopant for forming the second conductivity region 17 is aluminum. The doping concentration of the second conductivity region 17 may be higher than the doping concentration of the base region 14 and lower than the doping concentration of the contact region 15. For example, the doping concentration of the second conductivity region 17 may be 1 × 10⁻⁶. 16 cm -3 The above is 1 x 10 17 cm -3 The following applies:

[0050] The first conductivity type region 16 and the second conductivity type region 17 may be formed alternately. For example, the first conductivity type region 16 may be formed by epitaxial growth of the semiconductor layer 20 while doping with the first conductivity type dopant, and then the second conductivity type region 17 may be formed by injecting the second conductivity type dopant from above the first conductivity type region 16. The first conductivity type region 16 and the second conductivity type region 17 may be formed by repeatedly alternating between epitaxial growth and dopant injection.

[0051] The drift region 18 is a region of a first conductivity type provided on the substrate layer 30. The drift region 18 is, for example, N-type. The drift region 18 may be formed by epitaxially growing the semiconductor layer 20 while doping it with a dopant of the first conductivity type. In this example, the drift region 18 is formed by epitaxially growing silicon carbide on a silicon carbide substrate layer 30 while doping it with nitrogen.

[0052] The drift region 18 may be a region where the semiconductor layer 20 without dopant is still present. That is, the doping concentration in the drift region 18 may be the doping concentration in the semiconductor layer 20.

[0053] The gate trench portion 40 is provided on the front surface 21 of the semiconductor layer 20. The gate trench portion 40 may penetrate the base region 14 and reach the first conductivity type region 16. The statement that the gate trench portion 40 penetrates the base region 14 is not limited to cases where the manufacturing order is that the base region 14 is formed before the gate trench portion 40 is formed. Cases where the base region 14 is formed on the side wall of the gate trench portion 40 after the gate trench portion 40 has been formed are also included in cases where the gate trench portion 40 penetrates the base region 14.

[0054] The front-side electrode 52 is set to source potential and is provided above the substrate layer 30, with the interlayer insulating film 38 in between. The front-side electrode 52 is formed of a material containing metal. The front-side electrode 52 may contain a barrier metal. At least a portion of the front-side electrode 52 may be formed of a metal such as aluminum (Al), or a metal alloy such as aluminum-silicon alloy (AlSi) or aluminum-silicon-copper alloy (AlSiCu).

[0055] The back electrode 24 is formed on the back surface 23 of the substrate layer 30. The back electrode 24 is made of a conductive material such as metal. For example, the back electrode 24 can be a single layer made of gold (Au), or a metal film laminated in the order of titanium (Ti), nickel (Ni), and Au. Furthermore, a metal film such as molybdenum (Mo) or tungsten (W) may be laminated as the bottom layer. In addition, a silicide layer made of nickel silicide (NiSix) or the like may be provided between the back surface 23 of the substrate layer 30 and the back electrode 24.

[0056] The interlayer insulating film 38 is provided above the front surface 21. A front surface side electrode 52 is provided above the interlayer insulating film 38. The interlayer insulating film 38 is provided with one or more contact holes 54 for electrically connecting the front surface side electrode 52 and the substrate layer 30.

[0057] The contact hole 54 is formed above each of the source region 12 and the contact region 15. The contact hole 54 may be provided extending in the direction of trench extension of the gate trench portion 40. A plug made of tungsten or the like may be formed inside the contact hole 54. Inside the contact hole 54, the front side electrode 52 and the semiconductor layer 20 are electrically connected.

[0058] Figure 2A shows an example of a method for manufacturing a semiconductor device 300. The manufacturing method in this example comprises a step S100 of raising the temperature of the semiconductor substrate 10, a step S200 of forming a semiconductor layer 20, and a step S300 of lowering the temperature of the semiconductor substrate 10.

[0059] In step S100, the semiconductor substrate 10 is heated from a predetermined intake temperature to a predetermined film deposition temperature. The intake temperature is the temperature at the intake position where the semiconductor substrate 10 is taken in by the film deposition apparatus for depositing a semiconductor layer 20 onto the semiconductor substrate 10. The intake temperature is higher than room temperature and lower than the film deposition temperature. The intake temperature may be 300°C or higher and 1200°C or lower. The intake temperature may be 600°C or higher and 900°C or lower. In one example, the intake temperature is 600°C.

[0060] The film deposition temperature is determined when the density of crystal defects in the deposited semiconductor layer 20 that cause characteristic defects in the semiconductor device 300 is 1 defect / cm³. -3 The temperature may be as follows: If the semiconductor layer 20 is a silicon carbide semiconductor, the film deposition temperature may be 1500°C or higher and 1700°C or lower. In one example, the film deposition temperature is 1600°C.

[0061] In step S200, a semiconductor layer 20 is deposited on the semiconductor substrate 10. Step S200 is performed at a temperature above the deposition temperature, with the semiconductor substrate 10 positioned at a predetermined deposition location. The semiconductor layer 20 may be deposited by chemical vapor deposition (CVD) or by proximity sublimation. In step S200, under conditions where the temperature of the semiconductor substrate 10 is above the deposition temperature, the semiconductor layer 20 may be epitaxially grown on the semiconductor substrate 10 by introducing a mixed gas of a carrier gas and a source gas. The source gas may be a gas containing silicon, a gas containing carbon, or a gas containing nitrogen. In one example, a silicon carbide semiconductor layer 20 is deposited on a silicon carbide semiconductor substrate 10 heated above the deposition temperature by introducing a mixed gas of monosilane and propane with hydrogen as the carrier gas.

[0062] In step S300, the semiconductor substrate 10 is cooled from the film deposition temperature to a predetermined extraction temperature. The extraction temperature is below the heat resistance temperature of the extraction arm used to extract the semiconductor substrate 10 after the semiconductor layer 20 has been deposited. The extraction temperature may be 600°C or higher and 1200°C or lower. The extraction temperature may be 600°C or higher and 900°C or lower. In one example, the extraction temperature is 600°C. The extraction temperature may be the same as the input temperature or different.

[0063] Figure 2B shows an example of a method for manufacturing a semiconductor device 300. Step S100 may include step S120, in which the semiconductor substrate 10 is heated to the first substrate temperature, and step S140, in which the semiconductor substrate 10 is heated to the film deposition temperature. Step S300 may include step S320, in which the semiconductor substrate 10 is cooled to the second substrate temperature, and step S340, in which the semiconductor substrate 10 is cooled to the removal temperature. Step S200, in which the semiconductor layer 20 is deposited, is the same as in Figure 2A, so its explanation is omitted.

[0064] In step S120, the semiconductor substrate 10 is heated to a first substrate temperature. The first substrate temperature is higher than the intake temperature and lower than the film deposition temperature. The first substrate temperature may be 600°C or higher and 1200°C or lower. For example, the first substrate temperature is 900°C. In step S120, the semiconductor substrate 10 may be moved from the intake position to a heating position different from the film deposition position, thereby raising the temperature from the intake temperature to the first substrate temperature.

[0065] After step S120, in step S140, the semiconductor substrate 10 is heated from the first substrate temperature to the film deposition temperature. In step S140, the semiconductor substrate 10 may be heated from the first substrate temperature to the film deposition temperature by moving it from the heating position to the film deposition position.

[0066] In step S320, the semiconductor substrate 10 is cooled down to the second substrate temperature. The second substrate temperature is higher than the removal temperature and lower than the film deposition temperature. The second substrate temperature may be 600°C or higher and 1200°C or lower. The second substrate temperature may be the same as or different from the first substrate temperature. In step S320, the semiconductor substrate 10 may be moved from the film deposition position to a different cooling position to cool down from the film deposition position, thereby cooling down from the film deposition temperature to the second substrate temperature.

[0067] After step S320, in step S340, the semiconductor substrate 10 is cooled from the second substrate temperature to the removal temperature. In step S340, the semiconductor substrate 10 may be cooled from the second substrate temperature to the removal temperature by moving it from the cooling position to the removal position.

[0068] The manufacturing method for the semiconductor device 300 in this example includes at least one of steps S120 and S320. Specific examples of steps S100 and S300 will be described later, along with a description of the operation of the manufacturing apparatus for the semiconductor device 300.

[0069] Figure 3A shows a cross-sectional view of the manufacturing apparatus 100 for the semiconductor device 300. The outer wall 105 of the manufacturing apparatus 100 is made of transparent quartz or opaque quartz, which has high heat resistance. The manufacturing apparatus 100 in this example includes a film deposition chamber 110, a susceptor 120, a distance adjustment unit 130, and a gate valve 140. The film deposition chamber 110 has a gas inlet pipe 111, a gas outlet pipe 112, an insulating material 113, an induction heating coil 114, and a heating element 115.

[0070] The deposition chamber 110 deposits a semiconductor layer 20 on a semiconductor substrate 10 located at a predetermined deposition position. The inside of the deposition chamber 110 is heated by a heating element 115 to raise the semiconductor substrate 10 to a predetermined deposition temperature. After raising the semiconductor substrate 10 to the deposition temperature in the deposition chamber 110, a carrier gas and a raw material gas are introduced from a gas introduction pipe 111 to deposit the semiconductor layer 20 on the semiconductor substrate 10. The carrier gas and raw material gas are discharged to the outside of the deposition chamber 110 from a gas discharge pipe 112.

[0071] The heating element 115 is heated by electromagnetic induction. The heating element 115 may also be heated by an induction heating coil 114 provided along the outer circumference of the film deposition chamber 110. The specific configuration of the heating element 115 heated by electromagnetic induction will be understood by those skilled in the art, so a detailed explanation will be omitted.

[0072] The heating element 115 is covered by the insulating material 113 inside the film deposition chamber 110. This prevents the heat generated by the heating element 115 from leaking to the outside, allowing the inside of the film deposition chamber 110 to be heated efficiently.

[0073] The susceptor 120 mounts the semiconductor substrate 10. The susceptor 120 is provided in a circular shape when viewed from above. The susceptor 120 may be made of the same material as the semiconductor substrate 10. This makes the specific heat of the susceptor 120 the same as that of the semiconductor substrate 10, allowing the temperatures of the semiconductor substrate 10 and the susceptor 120 to be uniform. Even if the susceptor 120 is made of a different material than the semiconductor substrate 10, a similar effect can be obtained if it is made of a material with a specific heat similar to that of the semiconductor substrate 10.

[0074] The distance adjustment unit 130 changes the distance between the semiconductor substrate 10 and the heating element 115. The distance adjustment unit 130 may include, in a top view, a rotating element 131 for rotating the semiconductor substrate 10 and a distance changing element 132 for changing the distance between the semiconductor substrate 10 and the heating element 115. The distance adjustment unit 130 may include a rod element 133 provided between the rotating element 131 and the susceptor 120. In this example, the distance adjustment unit 130 changes the distance between the semiconductor substrate 10 and the heating element 115 by moving the susceptor 120 and the semiconductor substrate 10 in the vertical direction (Y-axis direction in Figure 3A) between the intake or extraction position and the film deposition position.

[0075] When the heating element 115 is heated to a predetermined temperature, a temperature gradient is created inside the manufacturing apparatus 100 such that the temperature is higher near the heating element 115 and decreases as the distance from the heating element 115 increases. In the example in Figure 3A, the temperature is highest inside the deposition chamber 110 and lowest near the gate valve 140. When the temperature inside the deposition chamber 110 is defined as the deposition temperature and the temperature near the gate valve 140 as the intake or extraction temperature, the distance adjustment unit 130 can change the distance between the semiconductor substrate 10 and the heating element 115 while the temperature of the semiconductor substrate 10 is higher than the intake or extraction temperature and lower than the deposition temperature.

[0076] Since the semiconductor substrate 10 and the susceptor 120 are sufficiently thin and have high thermal conductivity, they can be approximated to have the same temperature as the ambient temperature in which they are located. In one example, the thickness d10 of the semiconductor substrate 10 is 350 μm or more and 500 μm or less, and the thickness d120 of the susceptor 120 is 350 μm or more and 500 μm or less.

[0077] The thicknesses of the semiconductor substrate 10 and the susceptor 120 may be approximately the same. For example, the thickness d120 of the susceptor 120 is 70% or more and 100% or less of the thickness d10 of the semiconductor substrate 10. This allows the temperatures of the semiconductor substrate 10 and the susceptor 120 to be approximately the same.

[0078] The distance adjustment unit 130 may change the distance at a speed sufficient to heat the semiconductor substrate 10 until its substrate temperature becomes the same as the ambient temperature. The distance adjustment unit 130 may change the distance between the semiconductor substrate 10 and the heating element 115 at a constant speed. The speed at which the distance adjustment unit 130 changes the distance between the semiconductor substrate 10 and the heating element 115 may be 50 cm / min or more, and 100 cm / min or less.

[0079] The rotating element 131 can rotate the semiconductor substrate 10 in the XZ plane. This reduces temperature variations in the semiconductor substrate 10, allowing for uniform deposition of the semiconductor layer 20.

[0080] The distance-changing element 132 is installed inside the manufacturing apparatus 100. In the manufacturing apparatus 100 of this example, the rotating element 131 moves up and down along the distance-changing element 132, thereby changing the distance between the semiconductor substrate 10 and the heating element 115. Since the distance-changing element 132 is not affected by the heat from the heating element 115, it can be made of a material that does not have high heat resistance.

[0081] The length L132 of the distance-changing element 132 is greater than or equal to the length required to cool the semiconductor substrate 10 to below the extraction temperature. For example, the length L132 of the distance-changing element 132 is between 5 and 10 times the radius R120 of the susceptor 120.

[0082] The rod element 133 is made of a material having a similar heat capacity to the semiconductor substrate 10 and the susceptor 120. This allows for efficient heating and cooling of the semiconductor substrate 10. For example, if the semiconductor substrate 10 is a silicon carbide semiconductor substrate, the rod element 133 is also made of silicon carbide material.

[0083] The gate valve 140 is installed on the outer wall 105 of the manufacturing apparatus 100. In this example, one gate valve 140 is installed at the outlet position of the manufacturing apparatus 100, but it is not limited to this. The gate valve 140 may be installed at both the intake position and the outlet position.

[0084] The manufacturing apparatus 100 can place a susceptor 120, which has a semiconductor substrate 10 mounted on it, inside the apparatus 100 via a gate valve 140, and remove the semiconductor substrate 10 on which the semiconductor layer 20 has been deposited. The gate valve 140 may be provided in three or more units. This makes it possible to deposit a semiconductor layer 20 on a semiconductor substrate 10 using a single apparatus for semiconductor materials with different deposition temperatures, intake temperatures, and removal temperatures.

[0085] Figure 3B shows an example of the heating stage S100 in the manufacturing apparatus 100. Using Figure 3B, the change in the distance between the semiconductor substrate 10 and the heating element 115 during the heating stage S100 will be explained.

[0086] In step S100, the distance adjustment unit 130 takes the semiconductor substrate 10 into position X E1 From, intake position X E1 It is closer to the heating element 115, and the film deposition position X D The semiconductor substrate 10 is moved to a heating position further away from the heating element 115. As a result, the semiconductor substrate 10 is heated to a first substrate temperature that is higher than the intake temperature but lower than the film deposition temperature.

[0087] In the example shown in Figure 3B, the heating position is the low-temperature heating position X. R1 and high-temperature side heating position X R2 These positions include the intake position X.E1 and film deposition position X D Any two points between [the specified location], and their positions are not particularly limited.

[0088] Low temperature side heating position X R1 The high-temperature side heating position X R2 This position is further away from the heating element 115. Low-temperature heating position X R1 The distance between the heating element 115 and the high-temperature side heating position X R2 The distance between this point and the heating element 115 is greater than the distance between this point and the heating element 115. That is, the low-temperature side heating position X R1 The high-temperature side heating position X R2 It is colder than that.

[0089] High-temperature side heating position X R2 The low-temperature heating position X R1 Closer to the heating element 115, and at the film deposition position X D It is further away from the heating element 115. High-temperature side heating position X R2 The distance between the film deposition position X and the heating element 115 is D The distance between this point and the heating element 115 is greater than the distance between this point and the heating element 115. That is, the high-temperature side heating position X R2 The film deposition position X D It is colder than that.

[0090] In step S100, the semiconductor substrate 10 is heated to the low-temperature side heating position X R1 From there, the low-temperature heating position X R1 High-temperature side heating position X is higher than R2 This includes the step of moving it to position X. Step S100 involves taking the semiconductor substrate 10 into position X E1 From, intake position X E1 Lower temperature side heating position X is higher than the lower temperature side. R1 Step S100 may include the step of moving the semiconductor substrate 10 to the high-temperature side heating position X. R2 From there, the high-temperature side heating position X R2 Film deposition position X is at a higher temperature than D This may include the step of moving it to that point.

[0091] In step S100, the semiconductor substrate 10 is positioned at insertion position X E1 Low temperature side heating position X R1High temperature side heating position X R2 , deposition position X D The devices may be moved in this order. This allows the semiconductor substrate 10 to be heated gradually.

[0092] The heating step S100 includes a step in which the semiconductor substrate 10 is heated by bringing it close to a heating element 115 that has been heated to a predetermined constant temperature. The heating element 115 may be constant at the film deposition temperature. In the heating step S100 of this example, even if the temperature of the heating element 115 is constant, the temperature of the semiconductor substrate 10 can be changed by changing the distance between the heating element 115 and the semiconductor substrate 10. As a result, the time required for the heating element 115 to heat up is eliminated, and the semiconductor substrate 10 can be heated up faster than when the temperature of the heating element 115 is changed.

[0093] Figure 3C shows an example of the cooling stage S300 in the manufacturing apparatus 100. Using Figure 3C, the change in the distance between the semiconductor substrate 10 and the heating element 115 during the cooling stage S300 will be explained.

[0094] In step S300, the distance adjustment unit 130 adjusts the semiconductor substrate 10 film deposition position X D From, film deposition position X D The semiconductor substrate 10 is moved to a cooling position further away from the heating element 115. As a result, the semiconductor substrate 10 is cooled to a second substrate temperature that is higher than the extraction temperature but lower than the film deposition temperature.

[0095] In the example shown in Figure 3C, the cooling position is the high-temperature side cooling position X. L1 and low-temperature side cooling position X L2 These positions include the deposition position X. D and removal position X E2 Any two points between [the specified location], and their positions are not particularly limited.

[0096] High temperature side cooling position L1 The low-temperature side cooling position X L2 Closer to the heating element 115, and at the film deposition position X D This position is further away from the heating element 115. High-temperature side cooling position X L1The distance between the heating element 115 and the low-temperature side cooling position X L2 It is smaller than the distance between it and the heating element 115. That is, the high-temperature side cooling position X L1 The low-temperature side cooling position X L2 It is hotter than that.

[0097] High temperature side cooling position L1 The distance between the film deposition position X and the heating element 115 is D The distance between this point and the heating element 115 is greater than the distance between this point and the heating element 115. That is, the high-temperature side cooling position X L1 The film deposition position X D It is at a lower temperature. The semiconductor substrate 10 is deposited at position X D High-temperature side cooling position X is lower than L1 By moving it to this position, the temperature of the semiconductor substrate 10 can be reduced to a temperature lower than the film deposition temperature.

[0098] Low temperature side temperature drop position X L2 The high-temperature side cooling position X L1 It is further away from the heating element 115. Low-temperature side cooling position X L2 The distance between the heating element 115 and the high-temperature side cooling position X L1 This is greater than the distance between it and the heating element 115. That is, the low-temperature side cooling position X L2 The high-temperature side cooling position X L1 It is colder than that.

[0099] In step S300, the semiconductor substrate 10 is brought to the high-temperature side cooling position X L1 From, high temperature side temperature drop position X L1 Lower temperature side cooling position X L2 This includes the step of moving it to the deposition position X. Step S300 involves moving the semiconductor substrate 10 to the deposition position X D From, film deposition position X D High-temperature side cooling position X is lower than L1 The step may include moving the semiconductor substrate 10 to the low-temperature side cooling position X. L2 From, low temperature side temperature drop position X L2 Removal position X is colder than E2 This may include the step of moving it to that point.

[0100] In step S300, the semiconductor substrate 10 may be moved in the order of the film formation position X D , the high-temperature side cooling position X L1 , the low-temperature side cooling position X L2 , and the take-out position X E2 . Thereby, the semiconductor substrate 10 can be gradually cooled down.

[0101] Step S300 has a step of cooling down by moving the semiconductor substrate 10 away from the heating element 115 heated to a predetermined constant temperature. Even in this case, since the time until the heating element 115 is cooled is not required, the semiconductor substrate 10 can be cooled down at a higher speed than when the temperature of the heating element 115 is changed.

[0102] In the manufacturing method of the semiconductor device 300, the distance between the semiconductor substrate 10 and the heating element 115 may change in at least one of the temperature rising step S100 and the temperature falling step S300. In the temperature rising step S100, when the semiconductor substrate 10 is heated up by approaching the heating element 115, in the temperature falling step S300, the semiconductor substrate 10 may be cooled down at the film formation position. In the temperature rising step S100, when the semiconductor substrate 10 is heated up at the film formation position, in the temperature falling step S300, the semiconductor substrate 10 may be cooled down by moving it away from the heating element 115.

[0103] FIG. 4 shows an example of a cross-section of a manufacturing apparatus 500 of a semiconductor device 300 of a comparative example. The manufacturing apparatus 500 of the comparative example has a film formation chamber 510 and a susceptor 520 for mounting the semiconductor substrate 50. The manufacturing apparatus 500 of the comparative example does not have a configuration for changing the distance between the semiconductor substrate 50 and the heating element 515.

[0104] In the manufacturing apparatus 500 of the comparative example, first, at a temperature below the intake temperature, the susceptor 520 on which the semiconductor substrate 50 is mounted is arranged at a predetermined film formation position. Next, the temperature of the heating element 515 is gradually raised to raise the temperature of the semiconductor substrate 50 to the film formation temperature. The heating element 515 may be heated by an induction heating coil 514. Also, in the manufacturing apparatus 500 of the comparative example, a heat insulating material 513 may be provided.

[0105] Subsequently, a semiconductor layer is deposited on the semiconductor substrate 50 by introducing a carrier gas and a raw material gas from the gas introduction pipe 511 while the temperature has been raised to the deposition temperature. In the manufacturing apparatus 500 of the comparative example, the semiconductor substrate 50 may also be rotated in the XZ plane. The carrier gas and raw material gas are discharged to the outside of the deposition chamber 510 from the gas discharge pipe 512.

[0106] In the comparative example manufacturing apparatus 500, the heating element 515 is cooled after the semiconductor layer is deposited. As a result, the semiconductor substrate 50 is gradually cooled and cooled to a temperature below the removal temperature. Then, the semiconductor substrate 50 with the deposited semiconductor layer, which has been cooled to a temperature below the removal temperature, is removed from the deposition chamber 510.

[0107] Figure 5 shows the film deposition time when using the manufacturing apparatus 100 in this example and the manufacturing apparatus 500 in the comparative example. Figure 5 is a graph with the temperature of the semiconductor substrate and heating element on the vertical axis and time on the horizontal axis. The time on the horizontal axis is normalized based on the time until the semiconductor substrate with the semiconductor layer deposited is removed when using the manufacturing apparatus 500 in the comparative example. In Figure 5, the case using the manufacturing apparatus 100 in this example is shown by a solid line, and the case using the manufacturing apparatus 500 in the comparative example is shown by a dashed line.

[0108] In the manufacturing apparatus 100 of this example, the temperature of the heating element 115 is constant. In the manufacturing apparatus 500 of the comparative example, after the semiconductor substrate 50 is placed in the film deposition position, the heating element 515 is heated to the film deposition temperature, and after film deposition, the heating element 515 is cooled to the removal temperature. In this example, by keeping the temperature of the heating element 115 constant, the energy required to heat the heating element and the energy required to cool the heating element can be reduced.

[0109] In the manufacturing apparatus 100 of this example, by changing the distance between the heating element 115, which is at a constant temperature, and the semiconductor substrate 10, the semiconductor substrate 10 can be heated and cooled more rapidly than the manufacturing apparatus 500 of the comparative example. In this example, the heating rate in the heating stage may be 30°C / min or more and 1000°C / min or less. The cooling rate in the cooling stage may be -50°C / min or more and -1000°C / min or less.

[0110] Regarding the time required to form a semiconductor layer on the semiconductor substrate, there is no significant difference between the manufacturing apparatus 100 of this example and the manufacturing apparatus 500 of the comparative example. By shortening the time required for the heating and cooling of the semiconductor substrate 10 in the manufacturing apparatus 100 of this example compared to the manufacturing apparatus 500 of the comparative example, the time required for manufacturing a semiconductor substrate on which a semiconductor layer has been formed can be shortened.

[0111] In the manufacturing apparatus 100 of this example, at the film formation position X D the temperature change of the semiconductor substrate 10 is smaller than that of the manufacturing apparatus 500 of the comparative example. In the manufacturing apparatus 500 of the comparative example, the temperature is raised from the intake temperature to the film formation temperature and lowered from the film formation temperature to the extraction temperature at the film formation position X D whereas in the manufacturing apparatus 100 of this example, the temperature is raised during the process of moving from the intake position X E1 to the film formation position X D and immediately reaches the film formation temperature when reaching the film formation position X D at time point A, and immediately drops to a temperature lower than the film formation temperature after leaving the film formation position X D at time point B.

[0112] In one example, at least one of the temperature increase amount of the semiconductor substrate 10 in the heating stage S100 at the film formation position X D or the temperature decrease amount of the semiconductor substrate 10 in the cooling stage S300 at the film formation position X D is 50% or less of the temperature difference between the film formation temperature and room temperature. At least one of the temperature increase amount or the temperature decrease amount may be 1 / 4 or less, 1 / 8 or less, or 1 / 16 or less of the temperature difference between the film formation temperature and room temperature.

[0113] Figure 6 shows a modified example of the manufacturing method of the semiconductor device 300. In the example in Figure 6, in step S100, the temperature of the multiple semiconductor substrates 10 is raised, and in step S300, the temperature of the multiple semiconductor substrates 10 is lowered. Step S200, in which the semiconductor layer 20 is formed, is the same as step S200 described above, except that the layer is formed on the multiple semiconductor substrates 10, so the explanation is omitted.

[0114] The modified manufacturing method shown in Figure 6 differs from the manufacturing method described in Figure 2A, etc., in that heat is exchanged between the multiple semiconductor substrates 10. In at least one of the heating stage S100 or the cooling stage S300, the multiple semiconductor substrates 10 located at the heating stage may exchange heat with the multiple semiconductor substrates 10 located at the cooling stage.

[0115] The heating step S100 may include a step S160 in which the multiple semiconductor substrates 10 located at the heating position are heated by exchanging heat with the multiple semiconductor substrates 10 located at the cooling position. In step S160, the multiple semiconductor substrates 10 located at the heating position are heated by heat supplied from the multiple semiconductor substrates 10 located at the cooling position. Heat exchange may be performed two or more times. In step S160, the multiple semiconductor substrates 10 may be heated from the intake temperature to the first substrate temperature by heat exchange at the heating position.

[0116] In step S160, the multiple semiconductor substrates 10 may be heated to the first substrate temperature by means other than heat exchange. For example, after heating by heat exchange, the multiple semiconductor substrates 10 may be heated to the first substrate temperature at the heated position by further heating using an additional heating device.

[0117] Step S100 includes step S180, in which the multiple semiconductor substrates 10 are heated to the film deposition temperature. Step S180 may be performed after step S160. Since the multiple semiconductor substrates 10 have been heated to the first substrate temperature in step S160, the time required to heat them to the film deposition temperature in step S180 can be shortened. In step S180, the multiple semiconductor substrates 10 may be heated from the first substrate temperature to the film deposition temperature at the film deposition location by a heating element for heating the multiple semiconductor substrates 10.

[0118] The cooling step S300 may include a step S360 in which the multiple semiconductor substrates 10 located at the cooling position are cooled by exchanging heat with the multiple semiconductor substrates 10 located at the heating position. In step S360, the multiple semiconductor substrates 10 located at the cooling position cool down by supplying heat to the multiple semiconductor substrates 10 located at the heating position. Cooling by heat exchange may be performed two or more times.

[0119] The cooling step S300 includes a step S380 in which the multiple semiconductor substrates 10 are cooled to the removal temperature. Step S380 may be performed after step S360. In step S380, the multiple semiconductor substrates 10 may be cooled to the removal temperature by heat exchange, or they may be cooled to the removal temperature by an additional cooling device.

[0120] Figure 7A shows a cross-sectional view of the manufacturing apparatus 200 for the semiconductor device 300. The outer wall 205 of the manufacturing apparatus 200 is made of transparent quartz or opaque quartz, which have high heat resistance, similar to the manufacturing apparatus 100. The manufacturing apparatus 200 in this example includes a film deposition chamber 210, a heat exchange section 230, a gate valve 240, a retraction section 250, a load lock chamber 260, and a boat moving means 270. The film deposition chamber 210 has a gas inlet pipe 211, a gas outlet pipe 212, an induction heating coil 214, and a heating element 215.

[0121] The deposition chamber 210 deposits semiconductor layers 20 on multiple semiconductor substrates 10 at predetermined deposition locations. Inside the deposition chamber 210, a heating element 215 is provided to raise the temperature of the multiple semiconductor substrates 10 to a predetermined deposition temperature. The heating element 215 may also be heated by electromagnetic induction.

[0122] The manufacturing apparatus 200 houses a boat 220 for mounting multiple semiconductor substrates 10, and raises and lowers the temperature of the boat 220 and the multiple semiconductor substrates 10. The boat 220 may have thermal insulation material 223 at its upper and lower sections. In the example in Figure 7A, the boat 220 mounts eight semiconductor substrates 10, but the number of semiconductor substrates 10 that the boat 220 can mount is not limited to this. The manufacturing apparatus 200 can simultaneously deposit a semiconductor layer 20 on each of the multiple semiconductor substrates 10 mounted on the boat 220, thereby reducing the time required for depositing the semiconductor layer 20 compared to depositing them one by one.

[0123] In the deposition chamber 210, after heating multiple semiconductor substrates 10 mounted on the boat 220 to the deposition temperature, a carrier gas and a raw material gas are introduced from the gas introduction pipe 211 to deposit a semiconductor layer 20 on the multiple semiconductor substrates 10. The gas introduction pipe 211 may be arranged along the boat 220 housed in the deposition chamber 210. This allows for efficient introduction of gas to the multiple semiconductor substrates 10 mounted on the boat 220. The carrier gas and raw material gas are discharged to the outside of the deposition chamber 210 from the gas discharge pipe 212.

[0124] The deposition chamber 210 may have a boat rotation element 221 for rotating a boat 220 on which multiple semiconductor substrates 10 are mounted. The boat rotation element 221 rotates the boat 220 on which multiple semiconductor substrates 10 are mounted in the XZ plane. This reduces temperature unevenness in the multiple semiconductor substrates 10 and enables uniform deposition of the semiconductor layer 20.

[0125] The material of the boat rotation element 221 may be a material having a specific heat similar to that of the multiple semiconductor substrates 10. This allows the temperature of the boat rotation element 221 to be similar to that of the multiple semiconductor substrates 10, thereby improving the rate of heating and cooling. For example, when the multiple semiconductor substrates 10 are silicon carbide semiconductor substrates, the boat rotation element 221 is made of silicon carbide.

[0126] The heat exchange unit 230 exchanges heat between multiple semiconductor substrates 10 at different temperatures. In the manufacturing apparatus 200 of this example, even during the period when semiconductor layers 20 are being deposited on multiple semiconductor substrates 10 in the deposition chamber 210, the heat exchange unit 230 can raise the temperature by exchanging heat between multiple semiconductor substrates 10 located in the heating position and multiple semiconductor substrates 10 located in the cooling position. In the manufacturing apparatus 200 of this example, the multiple semiconductor substrates 10 can be preheated before moving the boat 220 into the deposition chamber 210, thereby shortening the heating time in the deposition chamber 210.

[0127] The heat exchange section 230 is provided in a cylindrical shape. The heat exchange section 230 includes multiple heat exchange chambers 235 for housing a boat 220 equipped with multiple semiconductor substrates 10, an insulating material 233 for insulating adjacent heat exchange chambers 235 from each other, and a heat exchange section rotating element 231 for rotating the heat exchange section 230. Details of heat exchange using the heat exchange section 230 will be described later.

[0128] The gate valve 240 may be provided between each component. In this example, the gate valve 240 is provided between the film deposition chamber 210 and the heat exchange section 230, between the heat exchange section 230 and the retraction section 250, between the retraction section 250 and the load lock chamber 260, and at the boat 220 removal position in the load lock chamber 260. By opening and closing the gate valve 240, the boat 220, which is loaded with multiple semiconductor substrates 10, can be moved back and forth between each component.

[0129] The retraction section 250 houses the boat 220. In the manufacturing apparatus 200, the boat 220 moves between the heat exchange section 230 and the film deposition chamber 210 via the retraction section 250. A boat 220 carrying multiple semiconductor substrates 10 on which a semiconductor layer 20 has been deposited moves from the film deposition chamber 210 to the retraction section 250, and then from the retraction section 250 to the heat exchange chamber 235 of the heat exchange section 230. A boat 220 carrying multiple semiconductor substrates 10 on which a semiconductor layer 20 has not been deposited moves from the heat exchange chamber 235 of the heat exchange section 230 to the retraction section 250, and then from the retraction section 250 to the film deposition chamber 210.

[0130] In the manufacturing apparatus 200, the boat 220 moves between different heat exchange chambers 235 of the heat exchange unit 230 via the retraction section 250. For example, the boat 220 moves from the heat exchange chamber 235, which is the low-temperature heating position, to the retraction section 250, and then from the retraction section 250 to the heat exchange chamber 235, which is the high-temperature heating position. For example, the boat 220 moves from the heat exchange chamber 235, which is the high-temperature cooling position, to the retraction section 250, and then from the retraction section 250 to the heat exchange chamber 235, which is the low-temperature cooling position.

[0131] In this example, the retractable section 250 is provided above the heat exchange section 230, but the location of the retractable section 250 is not limited to this example. The retractable section 250 may be provided below the heat exchange section 230, or adjacent to the heat exchange section 230. The retractable section 250 may also be provided below the film deposition chamber 210. The location of the retractable section 250 is not limited as long as the boat 220 can be stored when the boat 220 moves between the film deposition chamber 210 and the heat exchange section 230.

[0132] The load lock chamber 260 removes the boat 220, which is loaded with multiple semiconductor substrates 10 that have been cooled in the heat exchange section 230. The load lock chamber 260 may remove the multiple semiconductor substrates 10 that have been cooled to the removal temperature in the heat exchange section 230. The load lock chamber 260 may remove the multiple semiconductor substrates 10 that have been cooled to the second substrate temperature in the heat exchange section 230 and cool them down to the removal temperature inside the load lock chamber 260.

[0133] The load lock chamber 260 may remove a boat 220 containing multiple semiconductor substrates 10 on which the semiconductor layer 20 has been deposited, and instead store a boat 220 containing multiple semiconductor substrates 10 on which the semiconductor layer 20 has not been deposited. This allows for the sequential removal of multiple semiconductor substrates 10 on which the semiconductor layer 20 has been deposited and which have cooled to the removal temperature, thereby increasing the throughput of the semiconductor device manufacturing process 300.

[0134] The boat moving means 270 moves the boat 220, which is equipped with multiple semiconductor substrates 10. In this example, the boat moving means 270 is provided in the shape of a hook. The boat moving means 270 is shown to be able to move the boat 220 up and down by hooking onto a suspension part 222 provided on the upper part of the boat 220, but is not limited to this example. The boat moving means 270 may be a robot arm, a belt conveyor, etc. The boat moving means 270 can be configured to move the boat 220 between the components of the manufacturing apparatus 200.

[0135] Figure 7B shows an example of a heat exchange section 230. Figure 7B shows a perspective view of the heat exchange section 230. In Figure 7B, for the sake of visibility, the insulating material 233 that insulates the adjacent heat exchange chambers 235 has been omitted. The heat exchange section 230 in this example has six heat exchange chambers 235-1, 235-2, 235-3, 235-4, 235-5 and 235-6. The number of heat exchange chambers 235 in the heat exchange section 230 is not limited to this. The heat exchange section 230 may have five or fewer heat exchange chambers 235, or it may have seven or more heat exchange chambers 235.

[0136] The heat exchange section 230 includes a main body 237 containing a plurality of heat exchange chambers 235, an upper member 232 provided on the upper part of the main body 237 and fixed to the manufacturing apparatus 200, and a lower member 234 provided on the lower part of the main body 237 and rotatable together with the main body 237. The upper member 232 and the lower member 234 are provided with through holes 236-1 and 236-2, respectively.

[0137] Since the upper member 232 is fixed to the manufacturing apparatus 200, the upper member 232 does not rotate even when the main body 237 rotates. Therefore, the position of the through hole 236-1 provided in the upper member 232 does not change even when the main body 237 rotates. Above the through hole 236-1 provided in the upper member 232, a retraction section 250 and a load lock chamber 260 are provided, and below the through hole 236-1, a film deposition chamber 210 is provided.

[0138] The heat exchange chamber 235 is provided in a hollow cylindrical shape with open top and bottom. When the main body 237 rotates, the heat exchange chamber 235 moves below the through hole 236-1, and the boat 220 can be inserted into and removed from the top of the heat exchange chamber 235 through the through hole 236-1.

[0139] Since the lower member 234 rotates together with the main body 237, the through hole 236-2 provided in the lower member 234 also moves with the rotation of the main body 237. In this example, the through hole 236-2 provided in the lower member 234 is positioned below heat exchange chamber 235-1 among the multiple heat exchange chambers 235. Therefore, when the main body 237 rotates, the area below heat exchange chamber 235-1 is open, while the areas below heat exchange chambers 235-2, 235-3, 235-4, 235-5, and 235-6 are closed.

[0140] The through-hole 236-2 may be provided so as to be located below the heat exchange chamber other than the heat exchange chamber 235-1. The heat exchange chamber in which the through-hole 236-2 is provided has an open bottom. This allows the boat 220 to be moved to the film deposition chamber 210 through the heat exchange chamber in which the through-hole 236-2 is provided.

[0141] A heat exchange chamber without a through-hole 236-2 at the bottom is closed off at the bottom. This allows the boat 220 to be stored in a heat exchange chamber without a through-hole 236-2 at the bottom.

[0142] In the example shown in Figure 7B, the upper part of the heat exchange chamber 235-6 is open through a through-hole 236-1, and the lower part of the heat exchange chamber 235-6 is open through a through-hole 236-2. Therefore, the boat 220 stored in the heat exchange chamber 235-6 can be moved to the retraction section 250 via the through-hole 236-1. After that, for example, the main body 237 is rotated clockwise in a top view to align the positions of the through-hole 236-1, the heat exchange chamber 235-1, and the through-hole 236-2. At this time, the boat 220 stored in the retraction section 250 can be moved to the film deposition chamber 210 via the through-hole 236-1, the heat exchange chamber 235-1, and the through-hole 236-2.

[0143] Figure 7C is a schematic diagram of the heat exchange section 230 in a top view. Heat exchange using the heat exchange section 230 will be explained using Figure 7C. In the example in Figure 7C, heat exchange chamber 235-1 is empty, and each of heat exchange chambers 235-2 to 235-6 houses a boat 220 on which multiple semiconductor substrates 10 are mounted. In addition, semiconductor layers 20 are deposited on the multiple semiconductor substrates 10 in the deposition chamber 210.

[0144] In step S410, the multiple semiconductor substrates 10 stored in the heat exchange chamber 235-5 are moved to the load lock chamber 260 via the retraction section 250. This allows the multiple semiconductor substrates 10, on which the semiconductor layer 20 has been deposited and which have been cooled to the removal temperature, to be removed from the load lock chamber 260. After step S410, the heat exchange chamber 235-5 becomes empty. Subsequently, the boat 220 is moved from another component into the now empty heat exchange chamber 235.

[0145] In step S420, the multiple semiconductor substrates 10 stored in the heat exchange chamber 235-6 are moved to the heat exchange chamber 235-5 via the retraction section 250. After step S420, the heat exchange chamber 235-6 becomes empty.

[0146] In step S430, the multiple semiconductor substrates 10 on which the semiconductor layer 20 has been deposited in the deposition chamber 210 are moved to the heat exchange chamber 235-6 via the retraction section 250. The substrate temperature of the multiple semiconductor substrates 10 stored in the heat exchange chamber 235-6 may be higher than the substrate temperature of the multiple semiconductor substrates 10 moved to the heat exchange chamber 235-5 in step S420. That is, the heat exchange chamber 235-6 may be a high-temperature side cooling position, and the heat exchange chamber 235-5 may be a low-temperature side cooling position with a lower temperature than the high-temperature side cooling position.

[0147] In step S440, the multiple semiconductor substrates 10 stored in the heat exchange chamber 235-2 are moved to the film deposition chamber 210 via the retraction section 250. The multiple semiconductor substrates 10 stored in the heat exchange chamber 235-2 may be heated to the first substrate temperature when moved to the film deposition chamber 210. After step S440, the heat exchange chamber 235-2 becomes empty.

[0148] In step S450, the multiple semiconductor substrates 10 stored in heat exchange chamber 235-3 are moved to heat exchange chamber 235-2 via the retraction section 250. After step S450, heat exchange chamber 235-3 becomes empty. After step S450, as shown by the hollow arrows in Figure 7C, the multiple semiconductor substrates 10 located in heat exchange chamber 235-6, which is the high-temperature side cooling position, supply heat to the multiple semiconductor substrates 10 moved to heat exchange chamber 235-2 in step S450 to cool down. That is, heat exchange chamber 235-2 is the high-temperature side heating position.

[0149] Multiple semiconductor substrates 10 located in the heat exchange chamber 235-2, which is the high-temperature heating position, are heated up by heat supplied from multiple semiconductor substrates 10 located in the heat exchange chamber 235-6, which is the high-temperature cooling position. In this process, the multiple semiconductor substrates 10 stored in the heat exchange chamber 235-2 may be heated up to the first substrate temperature.

[0150] The heating device 238 may be provided in the heat exchange chamber 235-2, which is the high-temperature heating position. Multiple semiconductor substrates 10 stored in the heat exchange chamber 235-2, which is the high-temperature heating position, may be heated by heat exchange and then heated to the first substrate temperature by the heating device 238.

[0151] In step S460, the multiple semiconductor substrates 10 stored in heat exchange chamber 235-4 are moved to heat exchange chamber 235-3 via the retraction section 250. Here, the multiple semiconductor substrates 10 moved to heat exchange chamber 235-2 in the previous step S450 have been heated by the previous heat exchange cycle, so their temperature is higher than the multiple semiconductor substrates 10 moved to heat exchange chamber 235-3 in step S460. That is, heat exchange chamber 235-3 is a lower temperature side heating position than heat exchange chamber 235-2. After step S460, heat exchange chamber 235-4 becomes empty.

[0152] After step S460, as shown by the hollow arrows in Figure 7C, the multiple semiconductor substrates 10 located in the heat exchange chamber 235-5, which is the low-temperature cooling position, supply heat to the multiple semiconductor substrates 10 located in the heat exchange chamber 235-2, which is the low-temperature heating position, to cool down. During this process, the multiple semiconductor substrates 10 stored in the heat exchange chamber 235-5 may be cooled down to the removal temperature.

[0153] The cooling device 239 may be installed in the heat exchange chamber 235-5, which is the low-temperature side cooling position. After the multiple semiconductor substrates 10 stored in the heat exchange chamber 235-5 have been cooled to the second substrate temperature by heat exchange, they may be cooled to the removal temperature by the cooling device 239.

[0154] Multiple semiconductor substrates 10 located in the heat exchange chamber 235-2, which is the low-temperature heating position, are heated by heat supplied from multiple semiconductor substrates 10 located in the heat exchange chamber 235-5, which is the low-temperature cooling position. As shown in Figure 7C, the heat insulation material 233 of the heat exchange section 230 causes heat exchange to occur between opposing heat exchange chambers, rather than between adjacent heat exchange chambers.

[0155] In step S470, the multiple semiconductor substrates 10 stored in the load lock chamber 260 are moved to the heat exchange chamber 235-4 via the retraction section 250. As a result, the load lock chamber 260 becomes empty, and in step S410, the multiple semiconductor substrates 10 stored in the heat exchange chamber 235-5 can be moved to the load lock chamber 260.

[0156] In the manufacturing apparatus 200 of this example, multiple semiconductor substrates 10 brought in from the load lock chamber 260 are heated from the intake temperature to the first substrate temperature by moving through the heat exchange chamber 235 of the heat exchange section 230. After that, the multiple semiconductor substrates 10 heated to the first substrate temperature are moved to the film deposition chamber 210, where they are heated to the film deposition temperature, and then a semiconductor layer 20 is deposited. This reduces the time required for heating in the film deposition chamber 210 and shortens the time required for the process of depositing the semiconductor layer 20.

[0157] In the manufacturing apparatus 200 of this example, multiple semiconductor substrates 10 removed from the film deposition chamber 210 are cooled to the removal temperature by moving through the heat exchange chambers 235 of the heat exchange unit 230. During the stage when the multiple semiconductor substrates 10 are being cooled, the multiple semiconductor substrates 10 stored in different heat exchange chambers 235 can be heated up, thereby reducing the energy required to heat up the multiple semiconductor substrates 10.

[0158] The heat exchange unit 230 is not limited to the configurations described in Figures 7A to 7C. The heat exchange unit 230 may be implemented in a configuration in which the heat exchange chambers 235 are arranged in one or two rows, or in a configuration in which they are arranged in two tiers vertically.

[0159] Figure 8 shows an example of a cross-section of a manufacturing apparatus 600 for a comparative example semiconductor device 300. The comparative example's manufacturing apparatus 600 includes a film deposition chamber 610, a boat 620 for mounting multiple semiconductor substrates, and a storage chamber 660 for housing the boat 620. The comparative example's manufacturing apparatus 600 does not have a configuration for heat exchange between the multiple semiconductor substrates.

[0160] In the comparative example manufacturing apparatus 600, first, a boat 620, on which multiple semiconductor substrates are mounted, is placed at a predetermined film deposition position at a temperature below the intake temperature. Next, the temperature of the heating element 615 is gradually increased to raise the temperature of the multiple semiconductor substrates to the film deposition temperature. The heating element 615 may be heated by an induction heating coil 614.

[0161] Subsequently, with the temperature raised to the film deposition temperature, a carrier gas and a raw material gas are introduced from the gas introduction pipe 611 to deposit semiconductor layers on multiple semiconductor substrates. In the manufacturing apparatus 600 of the comparative example, the boat 620 may also be rotated in the XZ plane by the boat rotation element 621. The carrier gas and raw material gas are discharged to the outside of the film deposition chamber 610 from the gas discharge pipe 612.

[0162] In the comparative example manufacturing apparatus 600, after the semiconductor layer is deposited, multiple semiconductor substrates are cooled to a temperature below the removal temperature inside the deposition chamber 610. Then, the multiple semiconductor substrates that have been cooled to a temperature below the removal temperature are removed from the deposition chamber 610 to the storage chamber 660.

[0163] Figure 9 shows the film deposition time when using the manufacturing apparatus 200 in this example and the manufacturing apparatus 600 in the comparative example. Figure 9 is a graph with the temperature of the semiconductor substrate on the vertical axis and time on the horizontal axis. The time on the horizontal axis is normalized based on the time it takes for the semiconductor substrate with the semiconductor layer deposited to be removed from the deposition chamber when using the manufacturing apparatus 600 in the comparative example. In Figure 9, the case using the manufacturing apparatus 200 in this example is shown by a solid line, and the case using the manufacturing apparatus 600 in the comparative example is shown by a dashed line.

[0164] In this example, the manufacturing apparatus 200 takes in the semiconductor substrates 10 by the heat exchange unit 230 and raises the temperature to a first substrate temperature T1, which is higher than the temperature T0, before moving the multiple semiconductor substrates 10 into the film deposition chamber 210. Therefore, the film deposition temperature T D If the same and the thermal conductivity of multiple semiconductor substrates 10 and boat 220 are the same, the film deposition temperature T0 will be higher than the intake temperature T1. D The manufacturing apparatus 200 in this example, which raises the temperature to a certain point, operates from an intake temperature T0 to a film deposition temperature T D Multiple semiconductor substrates 10 can be deposited at a film deposition temperature T in a shorter time than the comparative example manufacturing apparatus 600, which raises the temperature to T. D It can be heated up to that temperature.

[0165] In this example, the manufacturing apparatus 200 cools down multiple semiconductor substrates 10, each with a semiconductor layer 20 deposited on it, to the extraction temperature T2 by supplying heat to different semiconductor substrates 10 via the heat exchange unit 230. Therefore, in this example, the manufacturing apparatus 200 can move multiple semiconductor substrates 10 from the deposition chamber 210 to the heat exchange unit 230 at a first substrate temperature T1 that is higher than the extraction temperature T2. In other words, the manufacturing apparatus 200 in this example allows for the reuse of the deposition chamber 210 in a shorter time than the manufacturing apparatus 600 in the comparative example. Although Figure 9 shows an example where the intake temperature T0 and the extraction temperature T2 are the same, the intake temperature T0 and the extraction temperature T2 may be different temperatures.

[0166] In the manufacturing apparatus 200 of this example, the first substrate temperature T1 and the film deposition temperature T D The smaller the temperature difference, the shorter the time required to manufacture the multiple semiconductor substrates 10 on which the semiconductor layers 20 are stacked. The first substrate temperature T1 is below the heat resistance temperature of the material constituting the boat moving means 270. This makes it possible to make the first substrate temperature T1 as high as possible.

[0167] In the manufacturing apparatus 200 of this example, at least one of the temperature rise of the semiconductor substrate 10 in the heating stage S100 at the film deposition chamber 210, or the temperature decrease of the semiconductor substrate 10 in the cooling stage S300 at the film deposition position, is the film deposition temperature T D The temperature difference between the film deposition temperature and room temperature is 50% or less. For example, the film deposition temperature T D When the temperature is 1600°C, the first substrate temperature T1 is 900°C, and the room temperature is 27°C, both the temperature rise and temperature fall are 700°C, and the film deposition temperature T D This is less than 50% of the temperature difference between the temperature at the source and the room temperature, which is 1573°C.

[0168] By increasing the temperature of the first substrate T1, the amount of temperature rise and fall at the film deposition site can be reduced. At least one of the temperature rise or fall is equal to the film deposition temperature T D The temperature difference between the temperature source and the room temperature may be 1 / 4 or less, 1 / 8 or less, or 1 / 16 or less.

[0169] Figure 10A shows a cross-sectional view of a manufacturing apparatus 700 for a semiconductor device 300. The manufacturing apparatus 700 in this example includes a film deposition chamber 710, a rotary lifting element 730, a gate valve 740, a heating section 780, and a cooling section 790. The film deposition chamber 710, the heating section 780, and the cooling section 790 each have a gas inlet pipe 711, a gas outlet pipe 712, and a heating element 715. The gas inlet pipe 711 and the gas outlet pipe 712 will be described later.

[0170] The deposition chamber 710 is a predetermined deposition position X D In this process, a semiconductor layer 20 is deposited on a semiconductor substrate 10. Inside the deposition chamber 710, a heating element 715 is provided to raise the semiconductor substrate 10 to a predetermined deposition temperature. The heating element 715 is covered with an insulating material 713. The heating element 715 is heated by a heater 714. The heating element 715 may also be heated by electromagnetic induction.

[0171] The thermal insulation material 713 is installed inside the manufacturing apparatus 700. The thermal insulation material 713 may be installed inside the film deposition chamber 710, the heating section 780, and the cooling section 790, or it may be installed between the inner wall of the manufacturing apparatus 700 and the heating element 715. This prevents the heat generated by the heating element 715 from leaking to the outside and allows the inside of the manufacturing apparatus 700 to be heated efficiently.

[0172] The heating section 780 raises the temperature of the semiconductor substrate 10 and the susceptor 720. The heating section 780 is the heating position. The heating section 780 has a heating element 715 for heating the semiconductor substrate 10 and the susceptor 720. In the heating section 780, the semiconductor substrate 10 and the susceptor 720 are heated from the intake temperature to the first substrate temperature.

[0173] The heating section 780 in this example consists of two heating chambers separated by a gate valve 740, but is not limited to this. The heating section 780 may consist of one heating chamber, or it may consist of three or more heating chambers. The heating section 780 in this example includes a low-temperature heating chamber 781 and a high-temperature heating chamber 782. The heating section 780 may also include a load lock chamber.

[0174] The low-temperature heating chamber 781 is a heating chamber with a lower temperature than the high-temperature heating chamber 782. In this example, the internal temperature of the low-temperature heating chamber 781 is higher than the intake temperature and lower than the first substrate temperature. The internal temperature of the low-temperature heating chamber 781 may also be the intake temperature.

[0175] The high-temperature heating chamber 782 is a heating chamber whose temperature is higher than that of the low-temperature heating chamber 781 and lower than that of the film deposition chamber 710. In this example, the internal temperature of the high-temperature heating chamber 782 is higher than the intake temperature and lower than the film deposition temperature. The internal temperature of the high-temperature heating chamber 782 may be the temperature of the first substrate. The high-temperature heating chamber 782 is located closer to the film deposition chamber 710 than the low-temperature heating chamber 781.

[0176] In this example, the manufacturing apparatus 700 has the low-temperature heating chamber 781, the high-temperature heating chamber 782, and the film deposition chamber 710 arranged in this order. The low-temperature heating chamber 781 and the high-temperature heating chamber 782 are located at the low-temperature heating position X, respectively. R1 and high-temperature side heating position X R2 It corresponds to.

[0177] The low-temperature heating chamber 781, the high-temperature heating chamber 782, and the film deposition chamber 710 have different temperatures. The low-temperature heating chamber 781, the high-temperature heating chamber 782, and the film deposition chamber 710 may have different numbers of heaters 714. The high-temperature heating chamber 782 may have more heaters 714 than the low-temperature heating chamber 781, and the film deposition chamber 710 may have more heaters 714 than the high-temperature heating chamber 782. This allows for the formation of a temperature distribution where the temperature increases from the low-temperature heating chamber 781 towards the film deposition chamber 710. In this example, the low-temperature heating chamber 781, the high-temperature heating chamber 782, and the film deposition chamber 710 have one, two, and three heaters 714, respectively.

[0178] The low-temperature heating chamber 781, the high-temperature heating chamber 782, and the film deposition chamber 710 may each have the same number of heaters 714. In that case, the heaters 714 provided in the low-temperature heating chamber 781, the high-temperature heating chamber 782, and the film deposition chamber 710 may be set to different heater outputs and may be of different types.

[0179] The semiconductor substrate 10 and susceptor 720 move between adjacent chambers using a rotating lifting element 730 and a transport arm (not shown). The rotating lifting element 730 can move the semiconductor substrate 10 and susceptor 720 vertically or rotate them. In the manufacturing apparatus 700 of this example, the semiconductor substrate 10 and susceptor 720 move in the order of low-temperature heating chamber 781, high-temperature heating chamber 782, and film deposition chamber 710. This allows the temperature of the semiconductor substrate 10 and susceptor 720 to be gradually increased.

[0180] The cooling unit 790 lowers the temperature of the semiconductor substrate 10 and the susceptor 720. The cooling unit 790 is the cooling position. The semiconductor substrate 10 and the susceptor 720 are cooled in the cooling unit 790 from the film deposition temperature to the removal temperature.

[0181] The cooling unit 790 in this example consists of two cooling chambers separated by a gate valve 740, but is not limited to this. The cooling unit 790 may consist of one cooling chamber, or it may consist of three or more cooling chambers. The cooling unit 790 in this example includes a high-temperature side cooling chamber 791 and a low-temperature side cooling chamber 792. The cooling unit 790 may also include a load lock chamber.

[0182] The high-temperature side cooling chamber 791 is a cooling chamber whose temperature is higher than that of the low-temperature side cooling chamber 792 and lower than that of the film deposition chamber 710. In this example, the internal temperature of the high-temperature side cooling chamber 791 is higher than the extraction temperature and lower than the film deposition temperature. The internal temperature of the high-temperature side cooling chamber 791 may also be the temperature of the second substrate. The high-temperature side cooling chamber 791 is located closer to the film deposition chamber 710 than the low-temperature side cooling chamber 792.

[0183] The low-temperature cooling chamber 792 is a cooling chamber with a lower temperature than the high-temperature cooling chamber 791. In this example, the internal temperature of the low-temperature cooling chamber 792 is higher than the extraction temperature and lower than the second substrate temperature. The internal temperature of the low-temperature cooling chamber 792 may also be the extraction temperature.

[0184] In this example, the manufacturing apparatus 700 has the film deposition chamber 710, the high-temperature cooling chamber 791, and the low-temperature cooling chamber 792 arranged in this order. The high-temperature cooling chamber 791 and the low-temperature cooling chamber 792 are located at the high-temperature cooling position X, respectively. L1 and low-temperature side cooling position X L2 It corresponds to.

[0185] The deposition chamber 710, the high-temperature cooling chamber 791, and the low-temperature cooling chamber 792 have different temperatures. The deposition chamber 710, the high-temperature cooling chamber 791, and the low-temperature cooling chamber 792 may have different numbers of heaters 714. The high-temperature cooling chamber 791 may have fewer heaters 714 than the deposition chamber 710, and the low-temperature cooling chamber 792 may have fewer heaters 714 than the high-temperature cooling chamber 791. This allows for the formation of a temperature distribution where the temperature decreases from the deposition chamber 710 towards the low-temperature cooling chamber 792. In this example, the deposition chamber 710, the high-temperature cooling chamber 791, and the low-temperature cooling chamber 792 have 3, 2, and 1 heaters, respectively.

[0186] The cooling section 790 may also have the same number of heaters 714 as the heating section 780. In that case, the same effect can be obtained by adjusting the output and type of heater 714.

[0187] In the manufacturing apparatus 700 of this example, the semiconductor substrate 10 and susceptor 720 move in the order of film deposition chamber 710, high-temperature cooling chamber 791, and low-temperature cooling chamber 792. This allows the temperature of the semiconductor substrate 10 and susceptor 720 to be gradually reduced.

[0188] In the manufacturing apparatus 700 of this example, the temperature of the semiconductor substrate 10 changes as the semiconductor substrate 10 and the susceptor 720 move through each chamber. This reduces the energy required to raise and lower the temperature of the heat-generating elements.

[0189] In the manufacturing apparatus 700 of this example, step S100 for raising the temperature of the semiconductor substrate 10 includes a step of moving the semiconductor substrate 10 between a plurality of heating chambers in the heating section 780 and between the heating chambers and the film deposition chamber 710. That is, this moving step involves moving the position of the semiconductor substrate 10 to the film deposition position X D This includes a step of changing the relative position of the semiconductor substrate 10 to the deposition position X. D To change it relative to the semiconductor substrate 10 and the film deposition position X D This refers to a change in the distance to [the object].

[0190] In the manufacturing apparatus 700 of this example, step S300 for cooling the semiconductor substrate 10 includes a step of moving the semiconductor substrate 10 between a plurality of cooling chambers in the cooling unit 790 and between the cooling chambers and the film deposition chamber 710. That is, this moving step involves moving the position of the semiconductor substrate 10 to the film deposition position X D This includes a step of changing it relative to [the previous value].

[0191] Figure 10B shows an example of the manufacturing apparatus 700. Figure 10B is an example of a top view of the manufacturing apparatus 700. The gas flow inside the manufacturing apparatus 700 will be explained using Figure 10B. Note that only the components necessary for the explanation are shown in Figure 10B, and other components are omitted from the description.

[0192] The manufacturing apparatus 700 includes a gas inlet pipe 711 and a gas outlet pipe 712. The gas inlet pipe 711 and the gas outlet pipe 712 are provided in the film deposition chamber 710, the heating section 780, and the cooling section 790. The gas inlet pipe 711 introduces one or more gases, selected from a carrier gas, a raw material gas, or an inert gas, into the chamber. The introduced gas is discharged to the outside through the gas outlet pipe 712.

[0193] In the manufacturing apparatus 700 of this example, an inert gas may be introduced in the heating section 780 and the cooling section 790. In Figure 10B, the flow of the inert gas is shown by dashed arrows. The inert gas is a gas that does not react with the semiconductor substrate 10. The inert gas may be a noble gas. The inert gas may be either nitrogen or argon. Argon is used as an example of the inert gas. In the heating section 780 and the cooling section 790, only a carrier gas may be introduced.

[0194] In the manufacturing apparatus 700 of this example, a mixed gas of a carrier gas and a raw material gas is introduced into the deposition chamber 710. In Figure 10B, the flow of the mixed gas is shown by solid arrows. This allows a semiconductor layer 20 to be deposited on the semiconductor substrate 10 inside the deposition chamber 710.

[0195] Figure 11A shows a cross-sectional view of a manufacturing apparatus 800 for a semiconductor device 300. The manufacturing apparatus 800 in this example includes a susceptor moving section 830 and a gate valve 840. The manufacturing apparatus 800 may also include a gas inlet pipe 811 and a gas outlet pipe 812, which will be described later. The manufacturing apparatus 800 in this example differs from the manufacturing apparatus 700 shown in Figure 10A in that the heating section, cooling section, and film deposition chamber are not separated by a gate valve.

[0196] The susceptor moving unit 830 moves the susceptor 820 on which the semiconductor substrate 10 is mounted. In this example, the susceptor moving unit 830 is shown in the form of a roller, but is not limited to this. The susceptor moving unit 830 can be any form that can move the susceptor 820 on which the semiconductor substrate 10 is mounted. The susceptor moving unit 830 may move the susceptor 820 by being rotated by an external drive, and the intake position X E1 The removal position X E2 The susceptor 820 may be moved by tilting the inside of the manufacturing apparatus 800 so that it is higher than the susceptor 820.

[0197] The gate valve 840 has an intake position X E1 and removal position X E2It is provided in the manufacturing apparatus 800. By opening the gate valve 840, the susceptor 820 with the semiconductor substrate 10 mounted on it can be taken into the manufacturing apparatus 800, or the susceptor 820 with the semiconductor substrate 10 mounted on it can be taken out from the manufacturing apparatus 800.

[0198] The heating element 815 is installed inside the manufacturing apparatus 800. The heating element 815 is covered with an insulating material 813. Multiple heating elements 815 may be installed inside the manufacturing apparatus 800. In this example, the heating element 815 is located at the low-temperature heating position X R1 High temperature side heating position X R2 , deposition position X D , high temperature side cooling position X L1 and low-temperature side cooling position X L2 It is provided in response to this.

[0199] The heating element 815 forms a temperature distribution inside the manufacturing apparatus 800. In this example, the heating element 815 is located inside the manufacturing apparatus 800 at intake position X E1 and removal position X E2 From deposition position X D A temperature distribution is formed such that the temperature increases towards X. The temperature at each position may be adjusted by changing the number of heaters 814 on the heating element 815. In this example, the low-temperature heating position X R1 and low-temperature side cooling position X L2 In this configuration, one heater 814 is positioned at the high-temperature side heating position X R2 and high-temperature side cooling position X L1 In this configuration, two heaters 814 are located at the film deposition position X D Three heaters 814 are provided at each location. The temperature at each location may be adjusted by changing the heater output of the heaters 814, or by changing the type of heater 814.

[0200] The semiconductor substrate 10 is positioned at insertion position X E1 From deposition position X D By moving toward the X, the temperature is raised from the extraction temperature to the film deposition temperature. The semiconductor substrate 10 is at the film deposition position X D Taken out from position X E2As it moves toward the object, the temperature is reduced from the film deposition temperature to the removal temperature. In this example, the temperature of the moving semiconductor substrate 10 and susceptor 820 changes according to the temperature distribution inside the manufacturing apparatus 800. This reduces the energy required to raise and lower the heat-generating element.

[0201] In the manufacturing apparatus 800 of this example, step S100, in which the semiconductor substrate 10 is heated, takes the semiconductor substrate 10 into position X E1 From deposition position X D This includes a step of moving toward the film deposition position X. D This includes a step of changing relative to X. In the manufacturing apparatus 800 of this example, step S300 of cooling the semiconductor substrate 10 includes a step of changing the semiconductor substrate 10 to the film deposition position X D Taken out from position X E2 This includes a step of moving toward the film deposition position X. D This includes a step of changing it relative to [the previous value].

[0202] Figure 11B shows an example of the manufacturing apparatus 800. Figure 11B is an example of a top view of the manufacturing apparatus 800. The gas flow inside the manufacturing apparatus 800 will be explained using Figure 11B. Note that only the components necessary for the explanation are shown in Figure 11B, and other components are omitted from the description.

[0203] The manufacturing apparatus 800 is equipped with a gas inlet pipe 811 and a gas outlet pipe 812. Gases such as carrier gas, inert gas, and raw material gas are introduced into the manufacturing apparatus 800 from the gas inlet pipe 811. The introduced gases are discharged to the outside from the gas outlet pipe 812.

[0204] In the manufacturing apparatus 800 in this example, the film deposition position X D At positions other than X, an inert gas is introduced. In Figure 11B, the flow of the inert gas is shown by a dashed arrow. In the manufacturing apparatus 800, the film deposition position X D At locations other than those mentioned above, only the carrier gas may be introduced.

[0205] In the manufacturing apparatus 800 in this example, the film deposition position X D In this process, a mixture of carrier gas and source gas is locally introduced. In Figure 11B, the flow of the mixed gas is shown by a solid arrow. This allows the film deposition position X D In this configuration, a semiconductor layer 20 can be formed on the semiconductor substrate 10.

[0206] In the example in Figure 11B, the deposition position X D and film deposition position X D An example is shown in which a common gas inlet pipe 811 and gas outlet pipe 812 are provided at positions other than X, but the example is not limited to this. D A gas inlet pipe 811 and a gas outlet pipe 812 for introducing a mixed gas, and the film deposition position X D The gas inlet pipe 811 and gas outlet pipe 812 for introducing an inert gas or carrier gas at locations other than those specified may be different.

[0207] Figure 12 shows a modified example of the manufacturing apparatus 800 for the semiconductor device 300. The differences from Figure 11A will be explained using Figure 12.

[0208] In the example shown in Figure 12, a film deposition unit 825 is used instead of the susceptor 820 on which the semiconductor substrate 10 is mounted. The film deposition unit 825 includes a susceptor 820 on which the semiconductor substrate 10 is mounted and a susceptor 820 on which the raw material substrate 810 is mounted.

[0209] The raw material substrate 810 is a substrate that serves as the raw material for the semiconductor layer 20. As an example, the raw material substrate 810 is a silicon carbide semiconductor substrate. The raw material substrate 810 is provided opposite the semiconductor substrate 10.

[0210] The raw material substrate 810 is positioned closer to the heating element 815 than the semiconductor substrate 10. Therefore, the raw material substrate 810 is heated to a higher temperature than the semiconductor substrate 10. As an example, the film deposition unit 825 is positioned at film deposition position X D The temperature of the raw material substrate 810 when it reaches this point is between 2200°C and 2400°C.

[0211] In this example, step S200, in which the semiconductor layer 20 is deposited, includes a step in which the semiconductor layer 20 is deposited by proximity sublimation. Proximity sublimation is a type of physical vapor deposition (PVD) in which raw materials are transported by sublimation from a high-temperature raw material substrate to a low-temperature substrate, and a thin film of the target substance is deposited. In this example, the deposition unit 825 deposits the semiconductor layer at deposition position X D Once the material reaches the semiconductor substrate 10, the temperature gradient causes the raw material to be transported from the raw material substrate 810 to the semiconductor substrate 10 by proximity sublimation, and the semiconductor layer 20 is formed on the semiconductor substrate 10. This eliminates the need to introduce a mixed gas of raw material gas and carrier gas from the outside to form the semiconductor layer 20, thus simplifying the manufacturing apparatus 800. The inside of the manufacturing apparatus 800 may be maintained in an inert gas atmosphere introduced from the gas introduction pipe 811.

[0212] Although the present invention has been described above using embodiments, the technical scope of the present invention is not limited to the scope described in the above embodiments. It will be apparent to those skilled in the art that various modifications or improvements can be made to the above embodiments. It will be clear from the claims that such modified or improved forms may also be included in the technical scope of the present invention.

[0213] It should be noted that the execution order of operations, procedures, steps, and stages in the apparatus, systems, programs, and methods shown in the claims, specifications, and drawings is not explicitly stated as "before," "prior to," etc., and that these can be implemented in any order unless the output of a previous process is used in a later process. Even if the operation flow in the claims, specifications, and drawings is described using phrases such as "first," "next," etc. for convenience, it does not mean that it is essential to perform the operations in that order. [Explanation of Symbols]

[0214] 10...Semiconductor substrate, 12...Source region, 14...Base region, 15...Contact region, 16...First conductivity type region, 17...Second conductivity type region, 18...Drift region, 20...Semiconductor layer, 21...Front surface, 23...Back surface, 24...Back surface electrode, 30...Substrate layer, 38...Interlayer insulating film, 40...Gate trench section, 50...Semiconductor substrate, 52...Front surface electrode, 54...Contact hole, 100...Manufacturing equipment, 105...Outer wall, 110...Film deposition chamber, 111...Gas inlet pipe, 112...Gas outlet pipe 113...Insulation material, 114...Induction heating coil, 115...Heating element, 120...Susceptor, 130...Distance adjustment section, 131...Rotating element, 132...Distance changing element, 133...Rod element, 140...Gate valve, 200...Manufacturing equipment, 205...Outer wall, 210...Film deposition chamber, 211...Gas inlet pipe, 212...Gas outlet pipe, 214...Induction heating coil, 215...Heating element, 220...Boat, 221...Boat rotation element, 222...Suspension section, 223...Insulation material, 230...Heat exchange section, 231...Heat exchanger 232... Upper member, 233... Thermal insulation material, 234... Lower member, 235... Heat exchange chamber, 236... Through hole, 237... Main body, 238... Heating device, 239... Cooling device, 240... Gate valve, 250... Retraction section, 260... Load lock chamber, 270... Boat moving means, 300... Semiconductor device, 500... Manufacturing equipment, 510... Film deposition chamber, 511... Gas introduction pipe, 512... Gas exhaust pipe, 513... Thermal insulation material, 514... Induction heating coil, 515... Heating element, 520... Susceptor, 600... ...Manufacturing equipment, 610...Film deposition chamber, 611...Gas inlet pipe, 612...Gas outlet pipe, 614...Induction heating coil, 615...Heating element, 620...Boat, 621...Boat rotating element, 660...Storage chamber, 700...Manufacturing equipment, 710...Film deposition chamber, 711...Gas inlet pipe, 712...Gas outlet pipe, 713...Insulation material, 714...Heater, 715...Heating element, 720...Susceptor, 730...Rotating lifting element, 740...Gate valve, 780...Heating section, 781...Low temperature heating chamber, 782...High temperature heating chamber,790... Cooling section, 791... High-temperature side cooling chamber, 792... Low-temperature side cooling chamber, 800... Manufacturing equipment, 810... Raw material substrate, 811... Gas inlet pipe, 812... Gas outlet pipe, 813... Insulation material, 814... Heater, 815... Heating element, 820... Susceptor, 825... Film deposition unit, 830... Susceptor movement section, 840... Gate valve,

Claims

1. A heating step in which the semiconductor substrate is heated from a predetermined intake temperature to a predetermined film deposition temperature, A film deposition step in which a semiconductor layer is deposited on the semiconductor substrate at a predetermined film deposition position and at the aforementioned film deposition temperature, The semiconductor substrate is cooled from the film deposition temperature to a predetermined removal temperature in a cooling step. Equipped with, The aforementioned heating step and the aforementioned cooling step are, In the aforementioned heating step, the semiconductor substrate is moved from the intake position to a heating position different from the film deposition position, and the semiconductor substrate is heated to a first substrate temperature that is higher than the intake temperature and lower than the film deposition temperature, or In the aforementioned cooling step, the semiconductor substrate is moved from the film deposition position to a cooling position different from the film deposition position, and the semiconductor substrate is cooled to a second substrate temperature that is higher than the removal temperature and lower than the film deposition temperature. A method for manufacturing a semiconductor device, comprising at least one of the following.

2. The aforementioned heating step and the aforementioned cooling step are, In the aforementioned heating step, the semiconductor substrate is moved from the low-temperature heating position to the high-temperature heating position which is hotter than the low-temperature heating position, or In the aforementioned cooling step, the semiconductor substrate is moved from the high-temperature side cooling position to the low-temperature side cooling position, which is at a lower temperature than the high-temperature side cooling position. Having at least one of the A method for manufacturing a semiconductor device according to claim 1.

3. The aforementioned heating step includes a step of raising the temperature by bringing the semiconductor substrate close to a heating element that has been heated to a predetermined constant temperature. A method for manufacturing a semiconductor device according to claim 1.

4. The low-temperature heating position is located further away from the heating element for heating the semiconductor substrate than the high-temperature heating position. The low-temperature cooling position is located further away from the heating element for raising the temperature of the semiconductor substrate than the high-temperature cooling position. The high-temperature heating position is closer to the heating element than the low-temperature heating position, and further away from the heating element than the film formation position. The high-temperature cooling position is closer to the heating element than the low-temperature cooling position, and further away from the heating element than the film formation position. The method for manufacturing a semiconductor device according to claim 2.

5. The heating rate in the aforementioned heating step is 30°C / min or more and 1000°C / min or less. The method for manufacturing a semiconductor device according to claim 2.

6. The cooling rate in the aforementioned cooling stage is -50°C / min or more and -1000°C / min or less. The method for manufacturing a semiconductor device according to claim 2.

7. The aforementioned heating step includes a step of heating multiple semiconductor substrates, or The aforementioned cooling step includes a step of cooling down a plurality of semiconductor substrates, or The heating step includes a step of heating a plurality of semiconductor substrates, and the cooling step includes a step of cooling a plurality of semiconductor substrates. A method for manufacturing a semiconductor device according to any one of claims 1 to 6.

8. The aforementioned heating step includes a step of heating a plurality of semiconductor substrates, The aforementioned cooling step includes a step of cooling down a plurality of semiconductor substrates. In at least one of the heating step or the cooling step, the plurality of semiconductor substrates located at the heating position exchange heat with the plurality of semiconductor substrates located at the cooling position. A method for manufacturing a semiconductor device according to claim 1.

9. The plurality of semiconductor substrates located at the heating position exchange heat with the plurality of semiconductor substrates located at the cooling position during the period in which a semiconductor layer is being formed on the plurality of semiconductor substrates located at the film formation position. The method for manufacturing a semiconductor device according to claim 8.

10. The plurality of semiconductor substrates located at the heating position are heated up by heat supplied from the plurality of semiconductor substrates located at the cooling position. The plurality of semiconductor substrates located at the cooling position supply heat to the plurality of semiconductor substrates located at the heating position to cool down. The method for manufacturing a semiconductor device according to claim 8.

11. In the aforementioned heating step, Multiple semiconductor substrates located at the high-temperature heating position are heated up by heat supplied from multiple semiconductor substrates located at the high-temperature cooling position. Multiple semiconductor substrates located at the low-temperature side heating position, which is colder than the aforementioned high-temperature side heating position, are heated up by heat supplied from multiple semiconductor substrates located at the low-temperature side cooling position, which is colder than the aforementioned high-temperature side cooling position. In the aforementioned cooling step, The plurality of semiconductor substrates located at the high-temperature side cooling position are cooled by supplying heat to the plurality of semiconductor substrates located at the high-temperature side heating position. The plurality of semiconductor substrates located at the low-temperature side cooling position supply heat to the plurality of semiconductor substrates located at the low-temperature side heating position to cool down. The method for manufacturing a semiconductor device according to claim 8.

12. In the aforementioned heating step, the multiple semiconductor substrates are At the aforementioned heating position, the temperature is raised from the intake temperature to the first substrate temperature by heat exchange. At the film deposition location, the temperature of the first substrate is raised from the film deposition temperature by a heating element for heating the plurality of semiconductor substrates. A method for manufacturing a semiconductor device according to any one of claims 8 to 11.

13. At least one of the following is the amount of temperature rise of the semiconductor substrate during the heating step at the film deposition location, or the amount of temperature decrease of the semiconductor substrate during the cooling step at the film deposition location, which is 50% or less of the temperature difference between the film deposition temperature and room temperature. A method for manufacturing a semiconductor device according to any one of claims 1 to 6 or 8 to 11.

14. In the heating step and the cooling step, the step of moving the semiconductor substrate includes a step of changing the position of the semiconductor substrate relative to the film deposition position. A method for manufacturing a semiconductor device according to any one of claims 1 to 6 or 8 to 11.

15. The aforementioned film formation step includes a step of forming the semiconductor layer by proximity sublimation. A method for manufacturing a semiconductor device according to any one of claims 1 to 6.

16. A deposition chamber for depositing a semiconductor layer on a semiconductor substrate located at a predetermined deposition position, In the aforementioned film deposition chamber, a heating element is provided for raising the semiconductor substrate to a predetermined film deposition temperature, A distance adjustment unit for changing the distance between the semiconductor substrate and the heating element. Equipped with, The distance adjustment unit changes the distance between the semiconductor substrate and the heating element when the temperature of the semiconductor substrate is higher than a predetermined intake temperature or predetermined extraction temperature and lower than the film deposition temperature, in a semiconductor device manufacturing apparatus.

17. The distance adjustment unit is, The semiconductor substrate, which is located at a predetermined intake position, is moved to a heating position that is closer to the heating element than the intake position and further away from the heating element than the film deposition position, thereby raising the temperature of the semiconductor substrate to a first substrate temperature that is higher than the intake temperature and lower than the film deposition temperature. By moving the semiconductor substrate to a cooling position that is further away from the heating element than the film deposition position, the semiconductor substrate is cooled to a second substrate temperature that is higher than the removal temperature but lower than the film deposition temperature. The apparatus for manufacturing a semiconductor device according to claim 16.

18. The distance adjustment unit is, In a top view, a rotating element for rotating the semiconductor substrate, A distance-changing element for changing the distance between the semiconductor substrate and the heating element. including The apparatus for manufacturing a semiconductor device according to claim 16.

19. The semiconductor substrate is mounted in a susceptor, The susceptor is provided in a circular shape when viewed from above. The length of the distance-changing element is 5 times or more and 10 times or less the radius of the susceptor. The apparatus for manufacturing a semiconductor device according to claim 18.

20. The thickness of the susceptor is 70% or more and 100% or less of the thickness of the semiconductor substrate. The apparatus for manufacturing a semiconductor device according to claim 19.

21. The thickness of the susceptor is 350 μm or more and 500 μm or less. The apparatus for manufacturing a semiconductor device according to claim 19.

22. The heating element is heated by electromagnetic induction. A semiconductor device manufacturing apparatus according to any one of claims 16 to 21.

23. A deposition chamber for depositing semiconductor layers on multiple semiconductor substrates at predetermined deposition locations, In the aforementioned film deposition chamber, a heating element is provided for raising the temperature of the plurality of semiconductor substrates to a predetermined film deposition temperature, A heat exchange unit for exchanging heat between multiple semiconductor substrates with different temperatures. A semiconductor device manufacturing apparatus equipped with the following features.

24. A boat for mounting the aforementioned multiple semiconductor substrates, A load lock chamber for removing the boat on which the plurality of semiconductor substrates, which have been cooled in the heat exchange section, are mounted. A semiconductor device manufacturing apparatus according to claim 23, comprising:

25. The boat is provided in a retractable section, The boat moves between the heat exchange section and the film deposition chamber via the retraction section. The apparatus for manufacturing a semiconductor device according to claim 24.

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