Semiconductor device and method for manufacturing the same

Abstract

This provides a novel technology for forming metal patterns on a substrate. [Solution] The semiconductor device comprises a first substrate and a second substrate. The first substrate comprises a first semiconductor substrate and a first wiring structure, the first wiring structure comprising an interlayer insulating film containing a cured product of a curable composition, grooves provided in the cured product, and a first metal pattern filled in the grooves. The second substrate comprises a second semiconductor substrate and a second wiring structure, the second wiring structure comprising a second metal pattern. The first metal pattern and the second metal pattern are joined together.

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