Polyatomic object crystal transport through atomic object confinement device junction

Abstract

The polyatomic object crystal is transported from a first leg to a second leg of an atomic object confinement device through a corresponding junction. A voltage source in electrical communication with electrodes of the device is controlled to confine the crystal within the first leg. The voltage source is controlled to cause transport of the crystal along the first leg approaching the junction and then cause a time-dependent potential to be generated at the junction that is configured to cause the crystal to traverse a transport path through the junction from the first leg to the second leg via a dynamic potential well that defines a particular variable axial frequency. The transport path is determined by combining a constant full confinement path for a representative atomic object of the crystal with a path of a high frequency minimum for a representative atomic object using a particular variable path ratio.

Description

[Technical field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS This application claims the benefit of priority to U.S. Application No. 63 / 203,029, filed July 6, 2021, the entire contents of which are incorporated herein by reference.

[0002] Various embodiments relate to devices, systems, and methods relating to controlling atomic objects within a two-dimensional or three-dimensional atomic object confinement apparatus that includes at least one junction. For example, some exemplary embodiments relate to transporting a multi-atomic object crystal through a junction of an atomic object confinement apparatus. [Background technology]

[0003] An ion trap can trap multiple ions in a potential well using a combination of electric and magnetic fields. Ions can be trapped for several purposes, which may include, for example, mass analysis, research, and / or controlling the quantum state of the trapped ions. In various scenarios, a multidimensional (e.g., two-dimensional) ion trap can be used to trap multiple ions. Generally, a multidimensional ion trap includes multiple one-dimensional trapping portions that are connected to each other through at least one junction. However, conventional multidimensional ion traps and / or conventional techniques for operating multidimensional ion traps are unable to reliably transport multi-ion crystals through the junctions of a multidimensional ion trap. Thus, through invested effort, ingenuity, and innovation, many deficiencies of such previous ion traps and operating methods have been addressed by developing structured solutions in accordance with embodiments of the present invention, many examples of which are described in detail herein. Summary of the Invention [Means for solving the problem]

[0004] Exemplary embodiments provide methods, systems, devices, computer program products, and / or the like for transporting a polyatomic object crystal through a junction of a multidimensional atomic object confinement device. In various embodiments, the polyatomic object crystal includes two or more types of atomic objects. In various embodiments, the atomic objects are ionic atoms, ionic molecules, and / or the like, and the polyatomic object crystal is a group of ionic atoms, ionic molecules, and / or the like physically associated with one another. In various embodiments, the atomic object confinement device is an ion trap or other confinement device configured to confine multiple atomic objects.

[0005] According to a first aspect, there is provided a method of controlling an atomic object confinement device to cause transport of a polyatomic object crystal through a junction of the atomic object confinement device. The junction is formed by two or more legs of the atomic object confinement device, at least two of the two or more legs defining a direction that is intersecting (e.g., not parallel) one another, at least proximate to the junction. The atomic object confinement device comprises a plurality of electrodes. In an exemplary embodiment, the method includes controlling one or more voltage sources to cause generation of a time-dependent potential by applying a control voltage signal to at least a portion of the plurality of electrodes. The time-dependent potential is configured to generate a potential well that travels through the junction from a first leg to a second leg of the two or more legs of the atomic object confinement device to cause the polyatomic object crystal to traverse a transport path through the junction from the first leg to the second leg of the two or more legs of the atomic object confinement device. The transport path is determined at least in part based on a combination of at least (a) a path of constant full confinement for atomic objects representative of the polyatomic object crystal, and (b) a path of high frequency minimum for atomic objects representative of the polyatomic object crystal. The combination of a constant full containment path and a high frequency minimum path is determined based on a particular variable path ratio.

[0006] In an exemplary embodiment, a path of constant total confinement is a path through junctions where, for a particular atomic object, the total confinement at each point along the path is roughly the same (eg, constant).

[0007] In an exemplary embodiment, the path of constant total confinement and the path of high frequency minimum correspond to the geometry of the atomic object confinement device, In one exemplary embodiment, the particular variable path ratio depends on both the frequency and the particular axial frequency of the periodic voltage signal applied to the high frequency rail of the atomic object confinement device.

[0008] In an exemplary embodiment, the multi-atomic object includes a first atomic object of a first species having a first mass and a second atomic object of a second species having a second mass, the first mass being greater than the second mass. In an exemplary embodiment, the representative atomic object is one of: (a) the first atomic object, (b) the second atomic object, (c) a reduced atomic object having physical properties determined based on reduced physical properties of two or more atomic objects of a multi-atomic object crystal, or (d) an average atomic object having physical properties determined based on average physical properties of the two or more atomic objects.

[0009] In an exemplary embodiment, the method further includes controlling the manipulation source to cause the manipulation source to generate and provide a sympathetic cooling beam such that the sympathetic cooling beam is incident on the poly-atomic object crystal while the poly-atomic object crystal traverses the junction.

[0010] In one exemplary embodiment, the atomic object confinement device is part of a quantum processor, and the multi-atomic object crystal includes a first atomic object used as a qubit atomic object of the quantum processor, and the multi-atomic object crystal includes a second atomic object used as a co-cooled atomic object. In one exemplary embodiment, the order of the atomic objects within the multi-atomic object crystal may be altered as the multi-atomic object crystal traverses a transport path.

[0011] In an exemplary embodiment, each leg of the two or more legs defines a one dimensional portion of the atomic object confinement device, such that the atomic object confinement device is a multi-dimensional atomic object confinement device.

[0012] In one exemplary embodiment, the control voltage signal is generated based on a waveform sequence determined based on a combination of at least (a) a constant complete confinement path for a representative atomic object and (b) a high frequency minimum path for a representative atomic object, and based on at least one of (a) a specific variable path ratio or (b) a specific variable axial frequency, where at least one of (a) the specific variable path ratio or (b) the specific variable axial frequency is configured to minimize at least non-adiabatic excitation of the poly-atomic object as a result of traversing the transport path.

[0013] In an exemplary embodiment, the method further includes accessing a waveform sequence from the memory in response to determining that the polyatomic object crystal is transported from the first leg to the second leg through the junction, the waveform sequence defining a particular variable axial frequency.

[0014] In one exemplary embodiment, the waveform sequence is configured to cause the representative atomic object to traverse a path that is a combination of at least (a) a path of constant complete confinement for the representative atomic object and (b) a path of high frequency minimum for the representative atomic object.

[0015] In one exemplary embodiment, the combination is a linear combination of (a) a path of constant perfect confinement for a representative atomic object, (b) a path of high frequency minimum for a representative atomic object, (c) a path of minimum motional excitation for a first atomic object of a multi-atomic object crystal, and (d) a path of minimum motional excitation for a second atomic object of a multi-atomic object crystal.

[0016] In an exemplary embodiment, at least one of: a) a particular variable path ratio; (b) a particular variable axis frequency characterizing the potential well; or (c) at least one principal axis of the time-dependent potential is different between a first point along the transport path and a second point along the transport path.

[0017] In one exemplary embodiment, the particular variable path ratio is in the range of 0 to 1, with at least a start point located on the first leg and an end point located on the second leg.

[0018] In an exemplary embodiment, the method includes controlling one or more voltage sources in electrical communication with one or more respective electrodes of the atomic object confinement device to cause the atomic object confinement device to confine at least one poly-atomic object crystal in a first leg of the two or more legs, and controlling the one or more voltage sources to cause transport of the poly-atomic object crystal along the first leg approaching the junction.

[0019] In one exemplary embodiment, the potential well is characterized by a particular variable axial frequency.

[0020] According to another aspect, a controller is provided that is configured to control operation of an atomic object confinement apparatus to cause transport of a polyatomic object crystal through a junction of the atomic object confinement apparatus. In an exemplary embodiment, the controller comprises at least one processing device, a memory that stores executable instructions, and one or more driver controller elements. The atomic object confinement apparatus comprises a junction connecting a first leg of the atomic object confinement apparatus to at least a second leg of the atomic object confinement apparatus. The executable instructions, when executed by the processing device, are configured to at least cause the controller to cause the one or more driver controller elements to control one or more voltage sources to apply control voltage signals to at least a portion of the plurality of electrodes to cause generation of a time-dependent potential. The time-dependent potential propagates through the junction from the first leg to the second leg, causing the polyatomic object crystal to traverse a transport path through the junction from the first leg to the second leg of the two or more legs of the atomic object confinement apparatus. The transport path is determined based at least in part on a combination of at least (a) a path of constant perfect confinement for atomic objects representative of the polyatomic object crystal and (b) a path of high frequency minimum for atomic objects representative of the polyatomic object crystal, the combination of the path of constant perfect confinement and the path of high frequency minimum being determined based on a particular variable path ratio.

[0021] In an exemplary embodiment, the executable instructions, when executed by the processing device, are further configured to cause the controller to at least: control one or more driver controller elements to one or more voltage sources in electrical communication with one or more respective electrodes of the atomic object confinement device to cause the atomic object confinement device to confine at least one poly-atomic object crystal within a first leg of the atomic object confinement device. In an exemplary embodiment, the executable instructions, when executed by the processing device, are further configured to cause the controller to at least: control one or more driver controller elements to one or more voltage sources to cause transport of the poly-atomic object crystal along the first leg approaching the junction.

[0022] In one exemplary embodiment, the time-dependent potential is configured to generate a potential well characterized by a particular variable axial frequency.

[0023] In an exemplary embodiment, the constant full confinement path and the high frequency minimum path correspond to the geometry of the atomic object confinement device, In one exemplary embodiment, the particular variable path ratio depends on both the frequency and the particular axial frequency of the periodic voltage signal applied to the high frequency rail of the atomic object confinement device.

[0024] In one exemplary embodiment, the multi-atomic object includes a first atomic object of a first species having a first mass and a second atomic object of a second species having a second mass, where the first mass is greater than the second mass.

[0025] In an exemplary embodiment, the representative atomic object is one of: (a) a first atomic object, (b) a second atomic object, (c) a reduced atomic object having physical properties determined based on reduced physical properties of two or more atomic objects of a multi-atomic object crystal, or (d) an average atomic object having physical properties determined based on average physical properties of two or more atomic objects.

[0026] In an exemplary embodiment, the executable instructions, when executed by the processing device, are further configured to cause the controller to at least control operation of the manipulation sources to cause the manipulation sources to generate and provide a communal cooling beam such that the communal cooling beam is incident on the poly-atomic object crystal while it traverses the junction.

[0027] In one exemplary embodiment, the atomic object confinement device is part of a quantum processor, and the multi-atomic object crystal includes a first atomic object used as a qubit atomic object of the quantum processor, and the multi-atomic object crystal includes a second atomic object used as a co-cooled atomic object.

[0028] In an exemplary embodiment, the order of the atomic objects within the multi-atomic object crystal is altered as the multi-atomic object crystal traverses the transport path. In an exemplary embodiment, each leg of the two or more legs defines a one-dimensional portion of the atomic object confinement device, and the atomic object confinement device is a multi-dimensional atomic object confinement device.

[0029] In one exemplary embodiment, the control voltage signal is generated based on a waveform sequence determined based on a combination of at least (a) a constant fully confined path for a representative atomic object and (b) a high frequency minimum path for a representative atomic object, and based on at least one of (a) a specific variable path ratio or (b) a specific axial frequency, where at least one of (a) the specific variable path ratio or (b) the specific axial frequency is configured to minimize at least non-adiabatic excitation of the polyatomic object as a result of traversing the transport path.

[0030] In an exemplary embodiment, the waveform sequence is stored in a memory, and the executable instructions, when executed by the processing device, are further configured to cause the controller to access the waveform sequence from the memory in response to at least determining that the polyatomic object crystal is transported through the junction from the first leg to the second leg, wherein the waveform sequence defines a particular variable axial frequency.

[0031] In one exemplary embodiment, the waveform sequence is configured to cause the representative atomic object to traverse a path that is a combination of at least (a) a path of constant complete confinement for the representative atomic object and (b) a path of high frequency minimum for the representative atomic object.

[0032] In an exemplary embodiment, the combination is a linear combination of (a) a constant perfect confinement path for a representative atomic object, (b) a high frequency minimum path for a representative atomic object, (c) a minimum non-adiabatic excitation path for a first atomic object of the multi-atomic object crystal, and (d) a minimum non-adiabatic excitation path for a second atomic object of the multi-atomic object crystal.

[0033] In an exemplary embodiment, at least one of: (a) the particular variable path ratio; (b) the particular variable axial frequency; or (c) at least one principal axis of the confinement potential is different at a first point along the transport path and a second point along the transport path.

[0034] In one exemplary embodiment, the particular variable path ratio is in the range of 0 to 1, with at least a start point located on the first leg and an end point located on the second leg.

[0035] According to yet another aspect, a quantum computer is provided. The quantum computer comprises an atomic object confinement device, one or more voltage sources, and a controller. The controller is configured to control operation of the atomic object confinement device to cause at least transport of a polyatomic object crystal through a junction of the atomic object confinement device. In an exemplary embodiment, the controller comprises at least one processing device, a memory storing executable instructions, and one or more driver controller elements. The atomic object confinement device comprises a junction connecting a first leg of the atomic object confinement device to at least a second leg of the atomic object confinement device. The controller is configured to cause the one or more driver control elements to control the one or more voltage sources, and cause the one or more driver controller elements to control the one or more voltage sources to apply a control voltage signal to at least a portion of the plurality of electrodes to cause generation of a time-dependent potential. The time-dependent potential is configured to generate a potential well that travels through the junction from a first leg to a second leg of the two or more legs of the atomic object confinement device to cause the polyatomic object crystal to traverse a transport path through the junction from the first leg to the second leg of the two or more legs of the atomic object confinement device. The transport path is determined at least in part based on a combination of at least (a) a path of constant perfect confinement for atomic objects representative of the polyatomic object crystal and (b) a path of high frequency minimum for atomic objects representative of the polyatomic object crystal. The combination of the path of constant perfect confinement and the path of high frequency minimum is determined based on a particular variable path ratio.

[0036] In an exemplary embodiment, the controller is further configured to cause the one or more driver controller elements to control one or more voltage sources in electrical communication with one or more respective electrodes of the atomic object confinement device to cause the atomic object confinement device to confine at least one poly-atomic object crystal within a first leg of the atomic object confinement device. The controller is further configured to cause the one or more driver controller elements to control the one or more voltage sources to cause transport of the poly-atomic object crystal along the first leg approaching the junction.

[0037] In one exemplary embodiment, the time-dependent potential is configured to generate a potential well characterized by a particular variable axial frequency.

[0038] In an exemplary embodiment, the constant full confinement path and the high frequency minimum path correspond to the geometry of the atomic object confinement device, In one exemplary embodiment, the particular variable path ratio depends on both the frequency and the particular axial frequency of the periodic voltage signal applied to the high frequency rail of the atomic object confinement device.

[0039] In one exemplary embodiment, the multi-atomic object includes a first atomic object of a first species having a first mass and a second atomic object of a second species having a second mass, where the first mass is greater than the second mass.

[0040] In an exemplary embodiment, the representative atomic object is one of: (a) a first atomic object, (b) a second atomic object, (c) a reduced atomic object having physical properties determined based on reduced physical properties of two or more atomic objects of a multi-atomic object crystal, or (d) an average atomic object having physical properties determined based on average physical properties of two or more atomic objects.

[0041] In an exemplary embodiment, the quantum computer is the manipulation source, and the controller is further configured to control operation of the manipulation source to cause the manipulation source to generate and provide a communal cooling beam such that the communal cooling beam is incident on the poly-atomic object crystal while it traverses the junction.

[0042] In one exemplary embodiment, the atomic object confinement device is part of a quantum processor, and the multi-atomic object crystal includes a first atomic object used as a qubit atomic object of the quantum processor, and the multi-atomic object crystal includes a second atomic object used as a co-cooled atomic object.

[0043] In one exemplary embodiment, the order of atomic objects within the multi-atomic object crystal is altered as the multi-atomic object crystal traverses a transport path.

[0044] In an exemplary embodiment, each leg of the two or more legs defines a one dimensional portion of the atomic object confinement device, such that the atomic object confinement device is a multi-dimensional atomic object confinement device.

[0045] In one exemplary embodiment, the control voltage signal is generated based on a waveform sequence determined based on a combination of at least (a) a constant complete confinement path for a representative atomic object and (b) a high frequency minimum path for a representative atomic object, and based on at least one of (a) a specific variable path ratio or (b) a specific variable axial frequency, where at least one of (a) the specific variable path ratio or (b) the specific variable axial frequency is configured to minimize at least non-adiabatic excitation of the poly-atomic object as a result of traversing the transport path.

[0046] In one exemplary embodiment, the waveform sequence defines a particular variable axial frequency and is stored in a memory of the controller, the controller being further configured to access the waveform sequence from the memory in response to determining that the polyatomic object crystal is transported from the first leg to the second leg through the junction.

[0047] In one exemplary embodiment, the waveform sequence is configured to cause the representative atomic object to traverse a path that is a combination of at least (a) a path of constant complete confinement for the representative atomic object and (b) a path of high frequency minimum for the representative atomic object.

[0048] In an exemplary embodiment, the combination is a linear combination of (a) a constant perfect confinement path for a representative atomic object, (b) a high frequency minimum path for a representative atomic object, (c) a minimum non-adiabatic excitation path for a first atomic object of the multi-atomic object crystal, and (d) a minimum non-adiabatic excitation path for a second atomic object of the multi-atomic object crystal.

[0049] According to yet another aspect, a computer program product is provided. In an exemplary embodiment, the computer program product comprises a non-transitory machine-readable storage medium storing executable instructions that, when executed on a processing device of a controller, cause one or more driver controller elements to control one or more voltage sources to apply a control voltage signal to at least a portion of the plurality of electrodes, thereby causing generation of a time-dependent potential. The atomic object confinement device comprises a junction connecting a first leg of the atomic object confinement device to at least a second leg of the atomic object confinement device. The time-dependent potential is configured to generate a potential well traveling through the junction from the first leg to the second leg of the two or more legs of the atomic object confinement device, causing the polyatomic object crystal to traverse a transport path through the junction from the first leg to the second leg of the two or more legs of the atomic object confinement device. The transport path is determined at least in part based on a combination of at least (a) a path of constant full confinement for atomic objects representative of the polyatomic object crystal, and (b) a path of high frequency minimum for atomic objects representative of the polyatomic object crystal. The combination of a constant full containment path and a high frequency minimum path is determined based on a particular variable path ratio.

[0050] In an exemplary embodiment, the executable instructions, when executed on a processing device of the controller, are further configured to at least cause the controller to cause one or more driver controller elements of the controller to control one or more voltage sources in electrical communication with one or more respective electrodes of the atomic object confinement device to cause the atomic object confinement device to confine at least one poly-atomic object crystal within a first leg of the atomic object confinement device, and to cause the one or more driver controller elements to control the one or more voltage sources to cause transport of the poly-atomic object crystal along the first leg approaching the junction.

[0051] In one exemplary embodiment, the time-dependent potential is configured to generate a potential well characterized by a particular variable axial frequency.

[0052] In an exemplary embodiment, the constant full confinement path and the high frequency minimum path correspond to the geometry of the atomic object confinement device, In one exemplary embodiment, the particular variable path ratio depends on both the frequency and the particular axial frequency of the periodic voltage signal applied to the high frequency rail of the atomic object confinement device.

[0053] In one exemplary embodiment, the multi-atomic object includes a first atomic object of a first species having a first mass and a second atomic object of a second species having a second mass, where the first mass is greater than the second mass.

[0054] In an exemplary embodiment, the representative atomic object is one of: (a) a first atomic object, (b) a second atomic object, (c) a reduced atomic object having physical properties determined based on reduced physical properties of two or more atomic objects of a multi-atomic object crystal, or (d) an average atomic object having physical properties determined based on average physical properties of two or more atomic objects.

[0055] In an exemplary embodiment, the executable instructions, when executed on a processing device of the controller, are further configured to cause the controller to control operation of the manipulation sources to cause the manipulation sources to generate and provide a communal cooling beam such that the communal cooling beam is incident on the poly-atomic object crystal while it traverses the junction.

[0056] In one exemplary embodiment, the atomic object confinement device is part of a quantum processor, and the multi-atomic object crystal includes a first atomic object used as a qubit atomic object of the quantum processor, and the multi-atomic object crystal includes a second atomic object used as a co-cooled atomic object.

[0057] In one exemplary embodiment, the order of atomic objects within the multi-atomic object crystal is altered as the multi-atomic object crystal traverses a transport path.

[0058] In an exemplary embodiment, each leg of the two or more legs defines a one dimensional portion of the atomic object confinement device, such that the atomic object confinement device is a multi-dimensional atomic object confinement device.

[0059] In one exemplary embodiment, the control voltage signal is generated based on a waveform sequence determined based on a combination of at least (a) a constant complete confinement path for a representative atomic object and (b) a high frequency minimum path for a representative atomic object, and based on at least one of (a) a specific variable path ratio or (b) a specific variable axial frequency, where at least one of (a) the specific variable path ratio or (b) the specific variable axial frequency is configured to minimize non-adiabatic excitation of the polyatomic object as a result of traversing the transport path.

[0060] In one exemplary embodiment, the waveform sequence defines a particular variable axial frequency and is stored in a memory accessible to a processing device of the controller, and the executable instructions, when executed on the processing device of the controller, are further configured to cause the controller to access the waveform sequence from the memory in response to determining that the polyatomic object crystal is transported through the junction from the first leg to the second leg.

[0061] In one exemplary embodiment, the waveform sequence is configured to cause the representative atomic object to traverse a path that is a combination of at least (a) a path of constant complete confinement for the representative atomic object and (b) a path of high frequency minimum for the representative atomic object.

[0062] In an exemplary embodiment, the combination is a linear combination of (a) a constant perfect confinement path for a representative atomic object, (b) a high frequency minimum path for a representative atomic object, (c) a minimum non-adiabatic excitation path for a first atomic object of the multi-atomic object crystal, and (d) a minimum non-adiabatic excitation path for a second atomic object of the multi-atomic object crystal.

[0063] The invention is described in general terms and with reference to the accompanying drawings, which are not necessarily drawn to scale. [Brief description of the drawings]

[0064] [Figure 1A] FIG. 2 illustrates a top view of a portion of an exemplary atomic object containment apparatus that may be used in an exemplary embodiment. [Figure 1B] 1B is an enlarged top view illustrating a portion of the exemplary atomic object containment apparatus shown in FIG. 1A located within the dashed rectangle. [Diagram 2] 1 is a plot showing a constant full confinement path, a radio frequency (RF) minimum path, and an exemplary crystal transport path of the present disclosure, according to one exemplary embodiment. [Diagram 3] 11 is a flowchart of various processes, procedures, and / or operations that may be performed, for example, by a computing entity or controller of an atomic object confinement apparatus, to determine a crystal transport waveform sequence, according to an illustrative embodiment. [Figure 4]1 is a flowchart of various processes, procedures, and / or actions that may be performed, for example, by a controller of an atomic object confinement device, to transport a poly-atomic object through a junction of the atomic object confinement device, in accordance with an illustrative embodiment. [Diagram 5] FIG. 1 is a schematic diagram illustrating a set of exemplary multi-atom object crystal trajectories through a junction, according to an exemplary embodiment; [Figure 6] FIG. 1 is a schematic diagram illustrating an exemplary quantum computing system including a multidimensional atomic object confinement device and configured to transport a multi-atomic object crystal through at least one junction of the multidimensional atomic object confinement device, in accordance with various embodiments. [Figure 7] FIG. 1 is a schematic diagram of an example controller of a quantum computer configured to perform one or more deterministic reshaping and / or reordering functions, in accordance with various embodiments. [Figure 8] FIG. 1 is a schematic diagram of an example computing entity of a quantum computer system that may be used by an example embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0065] The present invention will now be described in more detail below with reference to the accompanying drawings, in which some, but not all, embodiments of the invention are illustrated. Indeed, the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein, but rather, these embodiments are provided so that this disclosure will satisfy applicable legal requirements. The term "or" (also written as " / ") is used herein in both alternative and connective senses, unless otherwise noted. The terms "exemplary" and "exemplary" are used as examples that do not indicate a level of quality. The terms "generally" and "about" refer to within engineering and / or manufacturing limits and / or user measurement capabilities, unless otherwise noted. Like numbers refer to like elements throughout.

[0066] In various embodiments, methods, devices, systems, computer program products, and / or the like are provided for transporting a multi-atomic object crystal through a junction of a multi-dimensional atomic object confinement device. In various embodiments, the multi-atomic object crystal includes two or more atomic objects physically associated with one another. In various embodiments, the two or more atomic objects are atomic objects of two or more species. For example, in one exemplary embodiment, the multi-atomic object crystal includes a singly ionized ytterbium atom and a singly ionized barium atom. In one exemplary embodiment, the multi-atomic object crystal includes a qubit ion configured for use as a data qubit of a quantum processor and a jointly cooled atomic object configured for use in performing joint cooling of the qubit ion. In one exemplary embodiment, the multi-atomic object crystal includes two ionic molecules (e.g., molecules having a non-zero net charge). In various embodiments, the multi-atomic object crystal includes three or more atomic objects. In various embodiments, the atomic objects are ionic atoms, negatively charged molecules, and / or trappable and / or charged particles.

[0067] In various embodiments, the atomic object confinement device is configured to confine a plurality of atomic objects, at least some of which are organized into a multi-atomic object crystal. In various embodiments, the atomic object confinement device is an ion trap. In various embodiments, the atomic object confinement device is a two-dimensional or three-dimensional atomic object confinement device. For example, in one exemplary embodiment, the atomic object confinement device is a two-dimensional surface ion trap or a two-dimensional Paul trap. In various embodiments, atomic objects are trapped and / or confined by the atomic object confinement device for various purposes, which may include, for example, mass analysis, research, and / or control of the quantum state of the trapped ions (e.g., as qubits in a quantum computer).

[0068] In various embodiments, the multidimensional atomic object confinement device comprises at least three legs connected to each other via at least one junction. For example, in one exemplary embodiment, the ends of three or four legs of the multidimensional atomic object confinement device are connected via junctions. In various embodiments, the legs of the atomic object confinement device are one-dimensional portions of the atomic object confinement device. In particular, the legs of the atomic object define a substantially one-dimensional confinement region in which the atomic object and / or polyatomic object crystal may be confined.

[0069] In various embodiments, at least two legs joined by a junction define one-dimensional confinement regions that are at least near the junction and are transverse to one another. For example, a portion of the first leg proximate the end of the first leg that abuts and / or joins the first junction generally lies in a first direction, and a portion of the second leg proximate the end of the second leg that abuts and / or joins the first junction generally lies in a second direction. The first and second directions are transverse to one another (e.g., non-parallel or anti-parallel to one another). In one exemplary embodiment, a portion of the third leg proximate the end of the third leg that abuts and / or joins the first junction generally lies in a third direction. In one exemplary embodiment, the third direction is transverse to the first direction. In one exemplary embodiment, the third direction is parallel to the first direction.

[0070] In various embodiments, the atomic object confinement device comprises one or more radio frequency (RF) electrodes, referred to herein as RF rails. A periodic voltage signal (e.g., having a radio frequency periodicity) is applied to the RF rails to generate a confinement or trapping pseudopotential. In various embodiments, the atomic object confinement device further comprises a plurality of trapping and / or transport (TT) electrodes. In various embodiments, the plurality of TT electrodes are generally organized into a sequence of TT electrodes extending along and / or substantially parallel to the one or more RF rails. A control voltage signal is applied to the TT electrodes to generate an electric potential configured to precisely position and / or transport an atomic object confined and / or trapped within the atomic object confinement device. For example, a control voltage signal applied to the TT electrodes generates a one-dimensional potential well that can be used to position an atomic object in a specific configuration within the atomic object confinement device and / or transport an atomic object from a first location within the atomic object confinement device to a second location within the atomic object confinement device. The control voltage signal applied to the TT electrode is substantially a direct current (DC) voltage that may change at a rate substantially slower (e.g., at least an order of magnitude slower) than the rate of change of the periodic voltage signal applied to the RF rail.

[0071] In various embodiments, the pseudopotential experienced by atomic objects trapped thereby is mass dependent. However, within the legs of the atomic object containment device, the pseudopotential has a well-behaved linear characteristic, and the pseudopotential includes a pseudopotential null extending along each substantially one-dimensional containment region defined by each leg. In particular, the pseudopotential null of a leg defines a transport path of the atomic object along that leg. For example, the time t dependent electric field generated by application of a periodic voltage signal to the RF rail is:

[0072]

number

[0073] where:

[0074]

number

[0075] is the position vector,

[0076]

number

[0077] is the amplitude of the electric field at position

[0078]

number

[0079] as a function of , where Ω is the frequency of the periodic voltage signal.

[0080]

number

[0081] So,

[0082]

number

[0083] It is.

[0084] As used herein, a pseudopotential has well-behaved linear properties when it appears within a leg and far from the junction to be similar to the pseudopotential that would result from two infinitely large parallel RF rails. In particular, the pseudopotential at the center of the leg defines a linear pseudopotential null (e.g., a line of RF minimum), and the confinement from the pseudopotential is radially symmetric about the linear pseudopotential null at the center of the leg. This pseudopotential configuration (e.g., the pseudopotential has well-behaved linear properties at the center of each of the legs) enables the performance of operations useful in using the atomic object confinement device as part of a quantum processor, such as performing logic gates, cooling, and various transport operations including splitting / combining polyatomic object crystals.

[0085] The potential contribution generated by application of the control voltage signal to the TT electrodes includes mass dependence. For example, a first atomic object of a first species has a first mass and a first charge, and a second atomic object of a second species has a second mass greater than the first mass and a second charge equal to the first charge. The first atomic object is more strongly influenced by the pseudopotential than the second atomic object. However, the first atomic object and the second atomic object are influenced by the electric potential generated by application of the control voltage signal to the TT electrodes with the same strength.

[0086] Near and / or within the junction of the atomic object confinement device, the well-behaved linear property of the pseudopotential is disturbed. For example, within the junction, the pseudopotential does not have a pseudopotential null that is within the confinement and / or trapping region of the atomic object confinement device. In other words, there is no pseudopotential null through the junction along which the confined and / or trapped atomic object may be transported. Thus, when the atomic object is transported through the junction, the atomic object is acted upon by a nonzero mass-dependent pseudopotential. When a single atomic object is transported through the junction at a time, the nonzero pseudopotential may be compensated through application of an appropriate control voltage signal to the TT electrodes. However, when a polyatomic object crystal (e.g., two or more atomic objects, possibly including two or more species of atomic objects) is transported through the junction, the mass difference between the atomic objects of the polyatomic object crystal creates significant technical problems in compensating for the nonzero pseudopotential.

[0087] Due to the effect of the non-zero pseudopotential experienced by the atomic object transported through the junction, it may be desirable to transport the atomic object along a local minimum of the pseudopotential, referred to herein as the RF minimum, to minimize the effect of the pseudopotential experienced by the atomic object. However, the complete confinement (e.g., the confinement caused by the sum of the electric fields generated by the application of the periodic voltage signal to the RF rail and the application of the control voltage signal to the TT electrode) is very low near the center of the junction along the path of the RF minimum through the junction. In other words, the potential well formed by both the periodic electric field generated by the RF rail and the more slowly developing electric field generated by the TT electrode is very shallow near the center of the junction along the path of the RF minimum through the junction. Thus, transporting the atomic object through the junction along the path of the RF minimum may result in the atomic object being strongly excited by small stray electric fields (e.g., generated by electronic noise in the system), which may cause the loss of the atomic object.

[0088] As a result of the low potential well depth at various points along the path of the RF minimum through the junction, single atomic object transport through the junction is sometimes performed by transporting the single atomic object along a path of constant perfect confinement through the junction. A path of constant perfect confinement is a path through the junction where, for a particular atomic object, the perfect confinement at each point along the path is approximately the same (e.g., constant). The perfect confinement value is taken from the perfect confinement value at a location within a portion of the leg where there is an RF null. Thus, the path of the RF minimum and the path of constant perfect confinement both start along the RF null of the first leg and end at the RF null of the second leg. For a single atomic object, the path of constant perfect confinement through the junction is easily obtained from an analysis of the electric field and generation of a trapping potential for the single atomic object. Typically, the path of constant perfect confinement is at a lower atomic object height (closer to the surface of the atomic object confinement device) near the junction center (e.g., compared to the path of the RF minimum). However, it is possible to design the atomic object confinement device such that the path of constant perfect confinement is at a nearly constant height.

[0089] As mentioned above, the pseudopotential experienced by atomic objects trapped in the atomic object confinement device is proportional to the inverse of the mass of each atomic object. When transporting a polyatomic object crystal containing atomic objects of different masses (e.g., atomic objects of different species), there is no path for the polyatomic object crystal through the junction that satisfies the constraints applied to the RF minimum path and / or the path of certain complete confinement. As a result, attempts to transport a polyatomic object crystal through the junction typically result in a loss of atomic objects (e.g., at least one of the atomic objects is no longer trapped or confined by the atomic object confinement device). Thus, significant technical difficulties exist for the transport of a polyatomic object crystal through the junction, especially when the polyatomic object crystal contains atomic objects of multiple species (e.g., two or more species).

[0090] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention provides a technical solution to the technical problem of transporting a polyatomic object crystal through a junction of an atomic object confinement device. For example, various embodiments provide techniques for determining a waveform sequence that causes a polyatomic object crystal to be transported through a junction when a control voltage signal generated based on the waveform sequence is applied to a TT electrode close to the junction. Various embodiments provide techniques for applying such a waveform sequence to transport a polyatomic object crystal through a junction of an atomic object confinement device. In various embodiments, the polyatomic object crystal transported through a junction of an atomic object confinement device is a multi-species polyatomic object crystal. For example, in one exemplary embodiment, the polyatomic object crystal comprises and / or consists of (a) a first atomic object of a first species and having a first mass, and (b) a second atomic object of a second species and having a second mass. The first mass and the second mass are different.

[0091] In one exemplary embodiment, the multi-atomic object crystal and the atomic object confinement device confining the multi-atomic object crystal are part of a quantum processor of a quantum computer. In one exemplary embodiment, a first atomic object of the multi-atomic object crystal is a qubit atomic object configured for use as a data qubit of the quantum processor, and a second atomic object of the multi-atomic object crystal is a collaborative cooling atomic object configured for use in performing collaborative cooling of the qubit atomic objects.

[0092] Exemplary Atomic Object Confinement Apparatus FIG. 1A is a top schematic view of a portion of an exemplary atomic object confinement device 100. In an exemplary embodiment, the atomic object confinement device 100 is a multi-dimensional (e.g., two-dimensional or three-dimensional) surface ion trap, a surface Paul trap, and / or the like configured to trap multiple ions therein. The atomic object confinement device 100 comprises a number of legs 110 and a number of junctions 120. Each leg 110 of the atomic object confinement device 100 extends a respective length between two respective ends. Typically (e.g., other than the ends of the atomic object confinement device in some cases), each end of each leg 110 is connected to at least one other leg 110 by a junction 120. FIG. 1B shows an expanded example of an atomic object confinement device junction 120 formed by the intersection of four legs 110A, 110B, 110C, 110D and / or connecting each of the legs 110A, 110B, 110C, 110D to each other via their respective ends. In particular, FIG. 1B illustrates portions of legs 110A, 110B, 110C, 110D near the ends of the respective legs 110 that join and / or intersect at junction 120. In general, legs 110 of atomic object confinement device 100 are one-dimensional portions of atomic object confinement device 100. In particular, legs 110 of the atomic object define a substantially one-dimensional confinement region in which atomic objects and / or polyatomic object crystals may be confined. In general, junction 120 is formed by two or more legs 110 meeting, joining, and / or abutting. At least two legs 110 of two or more legs 110 define a one-dimensional confinement region that intersect with each other, at least near the junction. For example, leg 110A intersects with legs 110B and 110D, at least near junction 120.

[0093] In an exemplary embodiment, the atomic object confinement device 100 is fabricated as part of an ion trap chip and / or as part of an ion trap device and / or package. In an exemplary embodiment, the atomic object confinement device 100 is at least partially defined by several radio frequency (RF) rails 130. In various embodiments, the atomic object confinement device 100 is at least partially defined by several rows of trapping and / or transport (TT) electrodes 135. In various embodiments, various TT electrode geometries, arrangements, layouts, and / or the like may be used. In various embodiments, the upper surface of the atomic object confinement device 100 has a planarized topology. For example, the upper surface of each RF rail 130 of several RF rails and the upper surface of each TT electrode 135 of several rows of TT electrodes may be substantially coplanar. In an exemplary embodiment, the surface of the atomic object confinement device 100 is not planar, and a plane is defined as the height of the atomic object above the "surface" of the atomic object confinement device 100 is measured.

[0094] In various embodiments, the legs 110 of the atomic object confinement device 100 include and / or are at least partially defined by several RF rails 130. In one exemplary embodiment, the legs 110 of the atomic object confinement device 100 are formed by substantially parallel longitudinal axes 132. For example, the leg 110C is at least partially defined by two RF rails 130C having substantially parallel longitudinal axes 132X. For example, the RF rails 130C defining the leg 110C are substantially parallel such that the distance between the RF rails 130C defining the leg 110C is approximately constant along the length of the RF rails 130C. Similarly, the leg 110B is at least partially defined by two RF rails 130B.1, 130B.2 having substantially parallel longitudinal axes 132Y.1, 132Y.2. For example, the RF rails 130B.1, 130B.2 that define leg 110B are substantially parallel such that the distance between the RF rails 130B.1, 130B.2 that define leg 110B is approximately constant along the length of the RF rails 130B.1, 130B.2. The substantially parallel longitudinal axes 132Y.1, 132Y.2 of the RF rails 130B.1, 130B.2 that at least partially define leg 110B are transverse to the substantially parallel longitudinal axes 132X.1, 132X.2 of the RF rails 130C.1, 130C.2 that at least partially define leg 110C. For example, the angle between the longitudinal axes 132Y.1, 132Y.2 of the RF rails 130B.1, 130B.2 that at least partially define the leg 110B and the longitudinal axes 132X.1, 132X.2 of the RF rails 130C.1, 130C.2 that at least partially define the leg 110C is greater than 0 degrees and less than 180 degrees (e.g., within the range of 15 degrees to 165 degrees, 25 degrees to 155 degrees, and / or similar angles, 45 degrees to 135 degrees, 60 degrees to 120 degrees, and / or similar angles).For example, in one illustrated embodiment, the angle between the longitudinal axes 132Y.1, 132Y.2 of the RF rails 130B.1, 130B.2 that at least partially define leg 110B and the longitudinal axes 132X.1, 132X.2 of the RF rails 130C.1, 130C.2 that at least partially define leg 110C is about 90 degrees. In one exemplary embodiment, the upper surfaces of the RF rails 130 may be substantially coplanar with the upper surface of the atomic object confinement device 100. FIG. 1B illustrates an atomic object confinement device 100 with each leg 110 defined at least in part by a pair (e.g., two) of substantially parallel RF rails 130. In other embodiments, various configurations of one or more RF rails 130 may be used to define the legs 110 of the atomic object confinement device 100. In an exemplary embodiment, a first set of one or more legs of the atomic object confinement device 100 is at least partially defined by RF rails 135 of a different configuration than a second set of one or more legs of the atomic object confinement device 100.

[0095] In various embodiments, two adjacent RF rails 130 (e.g., two RF rails 130C.1, 130C.2 at least partially defining leg 110C, or two RF rails 130B.1, 130B.2 at least partially defining leg 110B) may be separated (e.g., insulated) from one another by a longitudinal gap 102. For example, the longitudinal gap may define (in one or two dimensions) a confinement channel or region of atomic object confinement device 100 in which one or more atomic objects may be confined and / or trapped in various arrangements within the atomic object confinement device. In various embodiments, the longitudinal gap 102 defined thereby may extend substantially parallel to the longitudinal axis (e.g., 132X.1, 132X.2, 132Y.1, 132Y.2) of the adjacent RF rail 130. In one exemplary embodiment, the longitudinal gap 102 may be at least partially filled with an insulating material (e.g., a dielectric material). In various embodiments, the dielectric material may be silicon dioxide (e.g., formed through thermal oxidation) and / or other dielectric and / or insulator materials. In various embodiments, the longitudinal gap 102 has a height (e.g., in the z-direction as illustrated in FIG. 1B) of about 40 μm to 500 μm. In various embodiments, one or more rows of TT electrodes 135 are disposed and / or formed within the longitudinal gap 102.

[0096] In various embodiments, atomic object confinement device 100 (and / or its legs 110 and / or junctions 120) may be at least partially defined by several rows of TT electrodes 135. Each row of TT electrodes 135 associated with and / or at least partially defining leg 110 is formed to extend substantially parallel to one or more RF rails 130 that at least partially define the respective leg 110. For example, three rows of TT electrodes 136A.1, 136A.2, 136A.3 at least partially define the portion of leg 110A illustrated in FIG. 1B. Each of the three rows of TT electrodes 136A.1, 136A.2, and 136A.3 includes multiple TT electrodes 135. In the illustrated embodiment, the several rows of TT electrodes 136A.1, 136A.2, 136A.3 extend substantially parallel to the x-axis shown in FIG. 1B, which is substantially parallel to the longitudinal axis of the RF rail 130 that at least partially defines the leg 110A. In various embodiments, the several rows of TT electrodes 136 (e.g., 136A.1, 136A.2, 136A.3) that at least partially define each leg 110 include two, three, four, and / or another number of rows of TT electrodes. In an exemplary embodiment, the atomic object confinement device 100 comprises a plurality of rows of TT electrodes 136, each number of rows of TT electrodes at least partially defining a leg 110 of the atomic object confinement device 100. In some embodiments, each of the TT electrodes 135 is formed by a substantially coplanar upper surface that is substantially coplanar with the upper surface of the RF rail 130.

[0097] In an exemplary embodiment, a transverse gap may exist between adjacent and / or adjacent TT electrodes 135. In an exemplary embodiment, the transverse gap may be an empty space and / or at least partially filled with a dielectric material to prevent electrical communication between adjacent and / or adjacent electrodes 135. In an exemplary embodiment, the transverse gap between adjacent and / or adjacent electrodes 135 may be in the range of about 1-10 μm.

[0098] In an exemplary embodiment, a longitudinal gap exists between a row of TT electrodes 136 and an adjacent and / or adjacent RF rail 130. In an exemplary embodiment, the longitudinal gap may be at least partially filled with a dielectric and / or insulator material to prevent electrical communication between the TT electrodes 135 of the row of electrodes 136 and the RF rail 130. In an exemplary embodiment, the longitudinal gap between adjacent and / or adjacent electrodes may be in the range of about 1-10 μm.

[0099] In an exemplary embodiment, several RF rails 130 (e.g., pairs) may be formed between a first row of TT electrodes 136A.1 and a third row of TT electrodes 136A.3, with a second row of TT electrodes 136A.2 extending along the longitudinal channel 102 between the RF rails 130. For example, each row of TT electrodes 136 of a particular leg 110 may extend in a direction substantially parallel to the longitudinal axis 132 of the RF rail 130 of the particular leg 110. In various embodiments, the upper surface of the TT electrodes 135 is substantially coplanar with the upper surface of the RF rail 130.

[0100] In various embodiments, a periodic voltage signal (e.g., a voltage signal having a high frequency periodicity) may be applied to RF rails 130 to generate electric and / or magnetic fields that act to keep atomic objects and / or poly-atomic object crystals confined and / or trapped within atomic object confinement device 100. For example, RF rails 130, which at least in part define a particular leg, generate electric pseudopotentials that confine and / or trap atomic objects within the particular leg in directions transverse to a corresponding one-dimensional portion of atomic object confinement device 100. For example, RF rails 130C.1, 130C.2 are configured to generate pseudopotentials that confine and / or trap atomic objects in y and z directions, directions transverse to leg axis 105C, as illustrated in FIG. 1B, when a periodic voltage signal is applied. For example, RF null 108C along leg 110C defines a transport path along leg 110C along which atomic objects and / or poly-atomic object crystals may be transported along leg 110C. The RF null 108C, in the illustrated embodiment, is substantially parallel to the leg axis 105C. Similarly, the RF nulls 108A, 108B, 108D of each leg 110A, 110B, 110D are substantially parallel to the respective leg axes 105A, 105B, 105D. In various embodiments, the TT electrode 135 is configured such that a control voltage signal is applied thereto such that the TT electrode 135 generates a time-dependent electric potential field that induces atomic objects and / or poly-atomic object crystals along a transport path (e.g., substantially parallel to the RF null 108C) relative to the leg 110C. For example, an electric field and / or a magnetic field generated at least in part by a control voltage signal applied to a TT electrode 135 of a particular leg 110 of the row of TT electrodes 114 may trap at least one atomic object and / or poly-atomic object crystal in a potential well above the upper surface of the longitudinal gap 102 of the second row of TT electrodes (e.g., 136A.2 for leg 110A) and / or each leg 110.In addition, the control voltage signal applied to the electrodes 135 may cause atomic objects and / or poly-atomic object crystals confined and / or trapped in the potential well above the upper surface of the second row of TT electrodes and / or the longitudinal gap 102 to traverse a trajectory that substantially follows and / or is aligned with the RF null 108 for the corresponding leg 110 when the atomic object and / or poly-atomic object crystal is positioned within the leg.

[0101] In various embodiments, a TT electrode 135 is also disposed within the junction. In various embodiments, the TT electrode 135 disposed near the junction 120 is configured to generate an electric field and / or a magnetic field configured to cause the atomic object and / or polyatomic object crystal (including a polyatomic object crystal including two or more atomic object species) to be transported along a transport path through the junction 120 when a control voltage signal is applied to the TT electrode 135 near the junction 120. In various embodiments, the transport path through the junction traversed by the polyatomic object crystal is a weighted average and / or linear combination of the paths of RF minimum and / or paths of constant total confinement for one and / or combination of the atomic objects of the polyatomic object crystal.

[0102] In various embodiments, the control voltage signal applied to the TT electrode 135 and the periodic voltage signal applied to the RF rail 130 are controlled by one or more connected devices (e.g., controller 30 and / or the like shown in FIG. 7) via leads. For example, depending on the positive or negative charge on at least one atomic object, the amplitude of the control voltage signal may be raised or lowered to the TT electrode 135 in the vicinity of a particular atomic object and / or poly-atomic object crystal to cause a particular ion to traverse a desired trajectory. For example, the controller 30 may control the voltage source 50 and / or other voltage drivers to cause the voltage source 50 and / or drivers to apply a control voltage signal to the TT electrode 135 to generate a time-dependent electric potential (e.g., an electric potential that changes with time) that causes the atomic object and / or poly-atomic object crystal within the atomic object confinement device 100 to be transported along a predetermined transport path.

[0103] Depending on factors such as the charge on at least one atomic object and / or the plurality of atomic objects of the poly-atomic object crystal and / or the shape and / or magnitude of the combined electric and / or magnetic fields (e.g., generated via application of a periodic voltage signal to RF rail 130 and a control voltage signal to TT electrode 135), the atomic object may be stabilized at a particular distance (e.g., about 20 μm to about 200 μm) above an upper surface of atomic object confinement device 100 (e.g., the coplanar upper surfaces of TT electrode 135 and RF rail 130). To further contribute to controlling the passage of the atomic objects and / or poly-atomic object crystals along a desired trajectory, atomic object confinement device 100 may, in various embodiments, be operated in a cryogenic and / or vacuum chamber that can cool the atomic object confinement device to a temperature below 124 Kelvin (e.g., below 100 Kelvin, below 50 Kelvin, below 10 Kelvin, below 5 Kelvin, and / or similar temperatures).

[0104] As will be appreciated, a portion of atomic object confinement device 100 is shown in FIG. 1B. In various embodiments, atomic object confinement device 100 comprises a plurality of junctions 120, each of which connects at least three legs of atomic object confinement device 100. For example, in one exemplary embodiment, atomic object confinement device 100 is a periodic array of legs 110 and / or junctions 120. As will be appreciated, junctions 120 of various embodiments may have different topologies and connect different numbers of legs (e.g., more than two legs, at least two legs that define transverse directions to one another, and / or the like).

[0105] Exemplary methods for determining waveform sequences for transporting a polyatomic object crystal through a junction In various embodiments, the computing entity 10 and / or the controller 30 (see, e.g., FIG. 7 ) may determine a waveform sequence to use in transporting the polyatomic object crystal through the junction along the transport path. In various embodiments, the waveform sequence is a series of voltages to be applied to one or more TT electrodes 135 to cause the polyatomic object crystal to traverse the junction 120 from the first leg 110 to the second leg 110. For example, the waveform sequence causes the polyatomic object crystal to traverse the transport path through the junction from a start position (close to the junction) disposed on the first leg 110 at the start to an end position (close to the junction) disposed on the second leg 110 at the end. In various scenarios, the first leg 110 and the second leg 110 have leg axes 105 that are substantially parallel, at least near the junction 120. For example, polyatomic object crystals may be transported from leg 110A to leg 110C, or vice versa, and / or from leg 110B to leg 110D, or vice versa. In various scenarios, first leg 110 and second leg 110 have intersecting leg axes at least near junction 120. For example, polyatomic object crystals may be transported from leg 110A to leg 110B or 110D, or vice versa, and / or from leg 110C to leg 110B or 110D, or vice versa.

[0106] In various embodiments, the transport path through the junction 120 is a weighted average and / or linear combination of RF minimum and / or constant complete confinement paths from a position along the RF null 108 of the first leg 110 to a position along the RF null 108 of the second leg 110. For example, when a polyatomic object crystal is transported through the junction 120 from leg 110A to leg 110B (leg 110C), the transport path through the junction 120 is a weighted average and / or linear combination of RF minimum and / or constant complete confinement paths from a point along the RF null 108A of leg 110A to a point along the RF null 108B (108C) of leg 110B (110C).

[0107] 2 shows a plot 200 illustrating height above a surface of atomic object confinement device 100 as a function of position along a path through junction 120. Illustrated are a path of RF minimum 202, a path of constant full confinement 204, and an exemplary transport path 206. As can be seen in plot 200, path of RF minimum 202 is generally further away from the surface of atomic object confinement device 100 than path of constant full confinement 204. Transport path 206, which is a weighted average and / or linear combination of path of RF minimum 202 and path of constant full confinement 204, lies between path of RF minimum 202 and path of constant full confinement 204.

[0108] 3 shows a flow chart illustrating processes, procedures, operations, and / or the like for determining a waveform sequence for use in transporting a polyatomic object crystal (e.g., a polyatomic object crystal including atomic objects of at least two atomic object species) through junction 120 on a corresponding transport path. In various embodiments, the waveform sequence is determined by a program or application operating on computing entity 10, via one or more hardware components in electrical and / or optical communication with the atomic object confinement device (e.g., controller 30), and / or the like.

[0109] Starting with step / action 302, an initial axial frequency and an initial path ratio are selected and / or determined. In an exemplary embodiment, the computing entity 10 and / or the controller 30 select and / or determine the initial axial frequency and the initial path ratio. For example, the computing entity 10 may comprise means such as a processing device 808, a memory 822, 824, a keypad 818, and / or the like (see FIG. 8 ) for selecting and / or determining the initial axial frequency and the initial path ratio. For example, the controller 30 may comprise means such as a processing device 705, a memory 710, a communication interface 720, and / or the like (see FIG. 7 ) for selecting and / or determining the initial axial frequency and the initial path ratio. In an exemplary embodiment, the initial path ratio is selected from a range from 0 to 1.

[0110] In various embodiments, the axial frequency ω describes the frequency of oscillation of a single atomic object in a potential well along the length of the legs of the atomic object confinement device. The total electrical potential (e.g., generated by application of a control voltage signal to the TT electrodes and a periodic voltage signal to the RF rails) includes potential wells or minima. When the atomic object is located near the center of one of these potential wells, the atomic object acts like a three-dimensional harmonic oscillator. The frequency of oscillation in a direction substantially parallel to the RF rails in the arrangement of potential wells is referred to herein as the axial frequency. In various embodiments, the control voltage signal applied to the TT electrodes is configured to control the curvature (e.g., second spatial derivative in the axial direction) of the generated potential well such that the atomic object in the potential well oscillates at a specific and / or controlled axial frequency. In various embodiments, an acceptable or tolerable range of axial frequencies is defined based on the geometry of the atomic object confinement device 100 and / or its legs, as well as constraints on keeping the atomic object and / or poly-atomic object crystals confined and / or trapped within the atomic object confinement device.

[0111] In various embodiments, the selected axial frequency is implemented by controlling various aspects of the potential well generated through application of control voltage signals to the TT electrodes. For example, some exemplary aspects of the potential well that may be controlled to implement the selected axial frequency include the depth of the potential well, the width of the axial potential well, the curvature of the axial potential well, and / or the like.

[0112] In various embodiments, the path ratio describes a weighted average and / or linear combination of the RF minimum path and the constant perfect confinement path used to generate the transport path. For example, the path ratio may be described as α / β, where the transport path 206 is equal to α times the RF minimum path 202 and β times the constant perfect confinement path 204 (divided by α+β). In various embodiments, both α and β are greater than zero. In one exemplary embodiment, the initial path ratio is selected to be 1.0.

[0113] In step / operation 304, a path of constant complete confinement for a single atomic object for a fixed RF rail geometry and pseudopotential strength is determined. For example, computing entity 10 and / or controller 30 determine a path of constant complete confinement for a single atomic object. For example, computing entity 10 may comprise means, such as processing device 808, memory 822, 824, and / or the like, for determining a path of constant complete confinement for a single atomic object. For example, controller 30 may comprise means, such as processing device 705, memory 710, communication interface 720, and / or the like, for determining a path of constant complete confinement for a single atomic object. In various embodiments, the path of constant complete confinement is determined based on a given geometry of the atomic object confinement device and / or a particular junction 120. For example, the path of constant complete confinement is determined based on a fixed RF rail geometry and a pseudopotential strength generated by applying a periodic voltage signal to the RF rail.

[0114] In various embodiments, the path of constant complete confinement is determined for a representative atomic object of the polyatomic object crystal. In one exemplary embodiment, the representative atomic object is an atomic object of the polyatomic object crystal having the largest mass (e.g., the heaviest atomic object of the polyatomic object crystal). In one exemplary embodiment, the representative atomic object is an atomic object of the polyatomic object crystal having the smallest mass. In one exemplary embodiment, the representative atomic object is an average atomic object having properties determined based on average (e.g., mean, median and / or mode) properties (e.g., average mass, average charge, and / or the like) of the atomic objects of the polyatomic object crystal. In one exemplary embodiment, the representative atomic object is a reduced atomic object having properties determined based on reduced properties (e.g., reduced mass, reduced charge, and / or the like) of the atomic objects of the polyatomic object crystal. In various embodiments, various other (virtual and / or simulated) atomic objects that have been assigned physical properties based on corresponding physical properties of one or more atomic objects of the polyatomic object crystal may be used as the representative atomic object. As will be appreciated, the mass m i The reduced mass of a polyatomic object crystal having an i-th atomic object is given by

[0115]

number

[0116] is determined by.

[0117] In step / operation 306, a path of RF minimum for one atomic object for a fixed RF rail geometry and pseudopotential strength is determined. For example, computing entity 10 and / or controller 30 determine a path of RF minimum for a representative atomic object. For example, computing entity 10 may comprise means, such as processing device 808, memory 822, 824, and / or the like, for determining a path of RF minimum for a representative atomic object. For example, controller 30 may comprise means, such as processing device 705, memory 710, communication interface 720, and / or the like, for determining a path of RF minimum for a representative atomic object. In various embodiments, the path of RF minimum is determined based on a given geometry of the atomic object confinement device and / or a particular junction 120. For example, the path of RF minimum is determined based on a fixed RF rail geometry and a pseudopotential strength generated by applying a periodic voltage signal to the RF rail. In various embodiments, the path of RF minimum is determined for a representative atomic object of the same multi-atomic object crystal used to determine a path of constant full confinement.

[0118] In step / operation 308, a linear combination path is generated and / or formed. In various embodiments, the linear combination path is generated and / or formed by determining a weighted average and / or linear combination of an RF minimum path for an atomic object and a constant full confinement path for an atomic object, and is generated and / or formed based on a path ratio. For example, the computing entity 10 and / or the controller 30 determine the linear combination path based on the RF minimum path, the constant full confinement path, and the path ratio. For example, the computing entity 10 may comprise means, such as the processing device 808, memory 822, 824, and / or the like, for determining the linear combination path based on the RF minimum path, the constant full confinement path, and the path ratio. For example, the controller 30 may comprise means, such as the processing device 705, memory 710, communication interface 720, and / or the like, for determining the linear combination path based on the RF minimum path, the constant full confinement path, and the path ratio. For example, in an exemplary embodiment, the RF minimum path is determined based on a position

[0119]

number

[0120] , where the variable t indexes the sequence of positions. Similarly, a given perfectly confined path is described by a sequence of positions

[0121]

number

[0122] , which is indexed by the same variable t. The linear join paths are

[0123]

number

[0124] is described by a sequence of

[0125]

number

[0126] The vectors are indexed by the variable t such that

[0127] In step / operation 310, a waveform sequence is determined that is configured to cause selected atomic objects from the representative atomic objects and / or polyatomic object crystals to traverse the primary bonding path through the junction 120 while the well has a required curvature to provide the selected and / or determined axial trapping frequency. For example, the computing entity 10 and / or the controller 30 determine a waveform sequence that is configured to cause selected atomic objects from the representative atomic objects and / or polyatomic object crystals to traverse the primary bonding path through the junction 120. For example, the computing entity 10 may comprise means, such as the processing device 808, memory 822, 824, and / or the like, for determining a waveform sequence that is configured to cause selected atomic objects from the representative atomic objects and / or polyatomic object crystals to traverse the primary bonding path through the junction 120. For example, the controller 30 may comprise means, such as the processing device 705, memory 710, communication interface 720, and / or the like, for determining a waveform sequence configured to cause selected atomic objects from the representative atomic objects and / or poly-atomic object crystals to traverse a primary coupling path through the junction 120. Further, the waveform sequence is determined such that application of the waveform sequence to the TT electrodes (in combination with application of a periodic voltage signal to the RF rail) causes creation of a potential well having an axial well depth, well width, and / or axial well curvature in the trapping axial direction (e.g., substantially parallel to the RF rail at the orientation of the potential well minimum), corresponding to a selected and / or determined axial trapping frequency.

[0128] It is noted that the RF minimum path, the constant full confinement path, and the waveform sequence are each determined based on a respective single atomic object. In various embodiments, the single atomic object is a representative atomic object (e.g., an atomic object of a multi-atomic object crystal having a maximum mass, a minimum mass, a medium mass, and / or a median mass, a simulated and / or virtual atomic object that is assigned physical properties based on the average and / or reduced physical properties of the atomic objects of the multi-atomic object crystal, and / or the like). In various embodiments, the same representative atomic object is used in determining the RF minimum path, the constant full confinement path, and the waveform sequence. For example, in one exemplary embodiment, the waveform sequence is determined such that the waveform sequence is configured to cause the atomic object of the multi-atomic object crystal having the maximum mass to traverse the primary bonding path through the junction 120. In one exemplary embodiment, the waveform sequence is determined such that the waveform sequence is configured to cause the atomic object of the multi-atomic object crystal having the minimum mass to traverse the primary bonding path through the junction 120. In one exemplary embodiment, the waveform sequence is determined such that the waveform sequence is configured to cause average atomic objects having average properties (e.g., mass, charge, and / or the like) of the atomic objects of the multi-atomic object crystal to traverse the primary bonding path through junction 120. In one exemplary embodiment, the waveform sequence is determined such that the waveform sequence is configured to cause reduced atomic objects having reduced properties (e.g., reduced mass, reduced charge, and / or the like) of the atomic objects of the multi-atomic object crystal to traverse the primary bonding path through junction 120.

[0129] In general, the waveform sequence includes multiple voltages, each voltage associated with a respective TT electrode 135 and a respective value of the indexed variable t. For example, the waveform sequence includes voltages of the control voltage signals to be applied to the respective TT electrodes 135 for each time step of the process of transporting the polyatomic object crystal through the junction 120. In other words, in a highly simplified case where only two TT electrodes are disposed near the junction and the process of transporting the polyatomic object crystal through the junction includes three time steps, the waveform sequence includes V1(t1), V2(t1), V1(t2), V2(t2), V1(t3), V2(t3), and V1(t4), V2 ... i (t j ) is the time step t of the polyatomic object crystal transport process j is the voltage applied (eg, via a respective control voltage signal) to the i-th TT electrode 135 in

[0130] In step / action 312, dynamics of the polyatomic object crystal are obtained in response to being subjected to a time-dependent potential well generated by application of a control voltage signal generated based on the determined waveform sequence. For example, dynamics of the polyatomic object crystal is simulated as the polyatomic object crystal traverses the junction 120 based on the determined waveform sequence. For example, the simulation may show an actual transport path that the polyatomic object crystal (and / or its components) is expected to take through the junction based on the polyatomic object crystal being subjected to a time-dependent potential well generated based on the determined waveform sequence. As described above, the transport path starts at a point on the RF null of the first leg near the junction 120 and ends at a point on the RF null of the second leg near the junction.

[0131] For example, the computing entity 10 and / or the controller 30 simulate and / or determine the dynamics of the polyatomic object crystal as it traverses the junction 120 based on application of the control voltage signal to the TT electrode 135 generated based on the determined waveform sequence while the atomic object confinement device is operating according to the selected and / or determined axial frequency. For example, the computing entity 10 may comprise means, such as the processing device 808, memory 822, 824, and / or the like, for simulating and / or determining the dynamics of the polyatomic object crystal traversing the junction 120 based on the determined waveform sequence. For example, the controller 30 may comprise means, such as the processing device 705, memory 710, communication interface 720, and / or the like, for simulating and / or determining the dynamics of the polyatomic object crystal traversing the junction 120 based on the determined waveform sequence. In an exemplary embodiment, the dynamics of each atomic object of the polyatomic object crystal may be determined individually and then modified based on the interactions between the atomic objects of the polyatomic object crystal.

[0132] In an exemplary embodiment, the simulation and / or determination of the dynamics of the polyatomic object crystal is performed and / or determined based on Newtonian mechanics, electrostatics, and / or electrodynamics. For example, for each time step of the process of transporting the polyatomic object crystal through the junction 120, the forces experienced by each atomic object of the polyatomic object crystal are determined. In various embodiments, the forces experienced by the atomic objects of the polyatomic object crystal are due to interactions between the atomic objects and pseudopotentials (e.g., generated by application of a periodic voltage signal to the RF rail 130), potentials generated by the TT electrodes (e.g., resulting from application of a control voltage signal determined and / or generated based on a waveform sequence and applied to the TT electrodes 135), the presence of other atomic objects of the polyatomic object crystal, and / or the like (e.g., any magnetic or other electric fields that may be expected to be present). After the forces experienced by the atomic object are determined, Newtonian mechanics (e.g., force equals mass multiplied by acceleration) or other mechanical paradigms may be used to determine and / or simulate the dynamics of the polyatomic object crystal as it traverses junction 120 based on the determined waveform sequence.

[0133] In step / operation 314, an excitation (e.g., a non-adiabatic excitation) to which the simulated polyatomic object crystal is subjected is determined based on the simulated and / or determined dynamics (e.g., simulated and / or determined in step / operation 312). For example, computing entity 10 and / or controller 30 determine that an excitation (e.g., a non-adiabatic excitation) to which the simulated polyatomic object crystal is subjected is determined based on the simulated and / or determined dynamics. For example, computing entity 10 may comprise means, such as processing device 808, memory 822, 824, and / or the like, for determining that an excitation (e.g., a non-adiabatic excitation) to which the simulated polyatomic object crystal is subjected is determined based on the simulated and / or determined dynamics. For example, controller 30 may comprise means, such as processing device 705, memory 710, communication interface 720, and / or the like, for determining that an excitation (e.g., a non-adiabatic excitation) to which the simulated polyatomic object crystal is subjected is determined based on the simulated and / or determined dynamics.

[0134] For example, in one exemplary embodiment, the non-adiabatic excitation experienced by the simulated polyatomic object crystal based on the simulated and / or determined dynamics is determined by analyzing interactions between and / or motions of atomic objects of the polyatomic object crystal. As will be appreciated, an adiabatic process is one in which there is no exchange of heat between a system (e.g., the polyatomic object crystal) and its surroundings. Thus, the non-adiabatic excitation of the polyatomic object crystal corresponds to heating and / or addition of energy to the simulated polyatomic object crystal as it traverses junction 120.

[0135] In an exemplary embodiment, the non-adiabatic excitation of the polyatomic object crystal is determined by determining the equilibrium position of the polyatomic object crystal (e.g., where all velocities and net forces are equal to zero) for the final voltage set of the waveform sequence. From this equilibrium position, the final velocities and positions from the dynamics simulation are subtracted to determine the excess energy (e.g.,

[0136]

number

[0137] , where m is the mass of the polyatomic object crystal, v is the difference between the velocity of the equilibrium position and the final velocity of the polyatomic object crystal from the dynamics simulation, E U is the potential energy difference between the equilibrium position potential energy and the final potential energy of the polyatomic object crystal from the dynamics simulation). The excess energy is the nonadiabatic excitation of the polyatomic object crystal.

[0138] In an exemplary embodiment, the nonadiabatic excitation of the polyatomic object crystal is determined by performing a second dynamics simulation at a static potential determined by the final voltage set of the waveform sequence, with the initial conditions being given by the final velocity and position of the initial dynamics simulation. The resulting motion of the second dynamics simulation is fitted using various curves (e.g., sine and / or cosine) and the vibration amplitudes are extracted therefrom. The nonadiabatic excitation of the polyatomic object crystal is then determined based on the extracted vibration amplitudes.

[0139] As will be appreciated, the electric field generated by applying a waveform sequence to the electrodes depends on the geometry of the electrodes. For example, the layout, shape, and / or size of the electrodes may differ between two different atomic object confinement devices. Thus, the outcome of the (non-adiabatic) excitation experienced by the polyatomic object crystal also depends on the geometry of the electrodes of the atomic object confinement devices. As such, the transport path through the junction that minimizes the (non-adiabatic) excitation experienced by the simulated polyatomic object crystal may be different for the atomic object confinement devices.

[0140] In step / operation 316, it is determined whether the (non-adiabatic) excitation undergone by the simulated polyatomic object crystal based on the dynamics determined in step / operation 312 satisfies one or more minimization criteria. For example, computing entity 10 and / or controller 30 determine whether the (non-adiabatic) excitation undergone by the simulated polyatomic object crystal based on the dynamics determined in step / operation 312 satisfies one or more minimization criteria. For example, computing entity 10 may comprise means, such as processing device 808, memory 822, 824, and / or the like, for determining whether the (non-adiabatic) excitation undergone by the simulated polyatomic object crystal based on the dynamics determined in step / operation 312 satisfies one or more minimization criteria. For example, controller 30 may comprise means, such as processing device 705, memory 710, communication interface 720, and / or the like, for determining whether the (non-adiabatic) excitation undergone by the simulated polyatomic object crystal based on the dynamics determined in step / operation 312 satisfies one or more minimization criteria.

[0141] In various embodiments, the minimization criterion is configured to determine whether the (non-adiabatic) excitation experienced by the simulated polyatomic object crystal is minimized within the system constraints (e.g., the axial frequency is within an acceptable or tolerable range of axial frequencies, and / or similar conditions). For example, a gradient of the (non-adiabatic) excitation experienced by the simulated polyatomic object crystal as a function of axial frequency and / or path ratio may be determined (e.g., based on one or more iterations of steps / operations 304-314, based on analytical and / or numerical calculations based on a current iteration of steps / operations 304-314, and / or the like). For example, the determined (non-adiabatic) excitation for a current iteration of steps / operations 304-314 may be compared to a previous determination of the (non-adiabatic) excitation determined in a previous iteration. In various embodiments, various optimization techniques are used to search the axial frequency and path ratio space to determine which combination of axial frequency and path ratio results in an optimal and / or minimal (non-adiabatic) excitation of the polyatomic object crystal. In one exemplary embodiment, the Nelder-Mead optimization method is used to determine which combination of axial frequency and path ratio results in optimal and / or minimal (non-adiabatic) excitation of the polyatomic object crystal.

[0142] When it is determined in step / action 316 that the minimization criterion is met by the (non-adiabatic) excitation of the simulated polyatomic object crystal determined based on the dynamics determined in step / action 312, the process continues to step / action 318. In step / action 318, the waveform sequence is provided as an output and / or stored for later use. For example, the computing entity 10 and / or the controller 30 provides the waveform sequence determined in the current / most recent iteration of step / action 310 as an output and / or stores it for later use. For example, the computing entity 10 may comprise means, such as the processing device 808, memory 822, 824, network interface 820, antenna 812 and transmitter 804, and / or the like, for providing the waveform sequence determined in the current / most recent iteration of step / action 310 as an output and / or storing it for later use. For example, the controller 30 may comprise means, such as a processing device 705, memory 710, communication interface 720, and / or the like, for providing as output and / or storing for later use the waveform sequence determined in the current / most recent iteration of step / operation 310. In various embodiments, the waveform sequence is stored along with metadata. For example, the metadata may include information regarding the polyatomic object crystal for which the waveform sequence was determined (e.g., the number of each atomic species in the polyatomic object crystal, the ordering of the atomic objects in the polyatomic object crystal, and / or the like), the junction traversal type (e.g., continuing through junction 120 (e.g., from 110B to 110D or vice versa, from 110A to 110C or vice versa), right turn (e.g., from 110A to 110D, from 110D to 110C, from 110C to 110B, from 110B to 110A), left turn (e.g., from 110A to 110B, from 110B to 110C, from 110C to 110D, from 110D to 110A), and / or similar motion as appropriate for the topology of junction 120), the associated axial frequency, and / or a U for generating an axial trapping field having an associated axial frequency. end, and / or the like.

[0143] In various embodiments, the waveform sequences and any associated metadata are stored in a computer-readable memory that is accessible to the processing device 705 of the controller 30. In one exemplary embodiment, the waveform sequences are stored in a library of machine-level operations, transport operations, and / or waveform sequences for use by the controller 30 during execution of one or more quantum computations, quantum circuits, and / or the like. For example, the waveform sequences may be stored for real-time or near real-time access and / or use by the controller 30 as the controller 30 controls the quantum processor 615 of the quantum computer 610 to execute one or more quantum operations, quantum circuits, and / or the like (see FIG. 6 ).

[0144] When it is determined in step / action 316 that the minimization criterion is not met by the (non-adiabatic) excitation of the simulated polyatomic object crystal determined based on the dynamics determined in step / action 312, the process continues to step / action 320. In step / action 320, the axial frequency and / or path ratio are adjusted, modified, updated, and / or the like to reduce the (non-adiabatic) excitation of the simulated polyatomic object crystal. For example, when the gradient of the (non-adiabatic) excitation experienced by the simulated polyatomic object crystal as a function of the axial frequency and / or path ratio is determined, the axial frequency and / or path ratio are adjusted, modified, updated, and / or the like based thereon such that the newly determined and / or selected axial frequency and / or path ratio is expected to result in a lower (non-adiabatic) excitation of the simulated polyatomic object crystal. For example, the computing entity 10 and / or controller 30 may adjust, modify, update, and / or the like, the axial frequency and / or path ratio such that the newly determined and / or selected axial frequency and / or path ratio causes (non-adiabatic) excitation of the simulated polyatomic object crystal to be expected, more likely to be expected, and / or reduced in the next iteration of steps / operations 304-314 (e.g., compared to the current and / or most recent iteration of steps / operations 304-314).

[0145] In one exemplary embodiment, the path ratio is adjusted, modified, updated, and / or the like such that the path ratio is in the range from 0 to 1. In one exemplary embodiment, the path ratio is adjusted, modified, updated, and / or the like such that the path ratio is in the range from 0 to 1, excluding 1.

[0146] For example, computing entity 10 may comprise means, such as processing device 808, memory 822, 824, and the like, for adjusting, modifying, updating, and / or doing the like, the axial frequency and / or path ratio such that the newly determined and / or selected axial frequency and / or path ratio causes (non-adiabatic) excitation to the simulated polyatomic object crystal to be expected, likely to be expected, and / or reduced in the next iteration of steps / operations 304-314. For example, controller 30 may comprise means, such as processing device 705, memory 710, communication interface 720, and the like, for adjusting, modifying, updating, and / or doing the like, the axial frequency and / or path ratio such that the newly determined and / or selected axial frequency and / or path ratio causes (non-adiabatic) excitation to the simulated polyatomic object crystal to be expected, likely to be expected, and / or reduced in the next iteration of steps / operations 304-314.

[0147] The process then returns to step / operation 304, where a path of constant full confinement for the representative atomic object is determined based on the newly determined and / or selected axial frequency. A path of RF minimum for the representative atomic object is also determined based on the newly determined and / or selected axial frequency. A new linear coupling path is then determined based on the determined path of constant full confinement, the path of RF minimum, and the newly determined and / or selected path ratio. A waveform sequence configured to cause the representative atomic object to traverse the new linear coupling path through the junction 120 is then determined. The dynamics of the polyatomic object crystal as a result of being subjected to a time-dependent potential well generated by application of the determined control voltage signal based on the determined waveform sequence is then determined, as well as the (non-adiabatic) excitation experienced by the simulated polyatomic object crystal. This process is repeated, with the axial frequency and / or path ratio being adjusted, modified, updated, and / or the like in each iteration until a minimization criterion is met and / or a maximum number of iterations has been performed.

[0148] In various embodiments, the waveform sequence determination process illustrated in FIG. 3 may be modified in various ways to determine a waveform sequence that causes the polyatomic object crystal to traverse a transport path through the junction 120 based on at least a linear combination of the path of RF minimum and the path of constant perfect confinement. For example, in one exemplary embodiment, the waveform sequence determination process may include determining and using a set of constraints that consider the effects of pseudopotentials experienced by each of two or more atomic objects of the polyatomic object crystal. For example, the waveform sequence determination process may consider the effects of pseudopotentials experienced by each type of the polyatomic object crystal. For example, when the polyatomic object crystal is comprised of a first atomic object of a first species and a second atomic object of a second species (where the first species and the second species are different and / or have different masses), the waveform sequence determination process may consider the effects of a first pseudopotential experienced by the first atomic object and the effects of a second pseudopotential experienced by the second atomic object. For example, a set of constraints may be defined for each species present in a polyatomic object crystal, and the computing entity 10 and / or controller 30 may attempt to solve all of the sets of constraints simultaneously (e.g., in a single waveform sequence).

[0149] In another example, constraints applied to first, second, third, fourth, and / or fifth derivatives (e.g., derivatives with respect to spatial coordinates and / or time) of the time-dependent potential wells and / or waveform sequences may be added, modified, and / or the like. For example, constraints may be applied to various spatial derivatives of the total potential (e.g., the combination of the electrical potentials generated by application of a control voltage signal to the TT electrodes and application of a periodic voltage signal to the RF rails) evaluated at each time step and / or at various points along a selected path.

[0150] In another example, a fixed perfect confinement path, an RF-minimum path, and a minimized (non-adiabatic) excitation path for each species present in the polyatomic object crystal are determined. For example, when the polyatomic object crystal includes a first atomic object of a first species and a second atomic object of a second species (e.g., the first and second species are different), a fixed perfect confinement path for the representative atomic object, an RF-minimum path for the representative atomic object, a minimized (non-adiabatic) excitation path for the first atomic object, and a minimized (non-adiabatic) excitation path for the second atomic object are determined. An optimized weighted average and / or linear combination of the determined paths is then determined. For example, the weights applied to each determined path when determining the weighted average and / or linear combination may be optimized to reduce and / or minimize (non-adiabatic) excitation of the polyatomic object crystal as a whole as the polyatomic object crystal crosses the junction 120. A waveform sequence is then determined, defined, and / or generated based on the optimized weighted average and / or linear combination of the determined paths. In various embodiments, various constraints may be considered when determining a transport path that is a weighted average and / or linear combination of at least certain complete containment paths and RF-minimum paths, and determining, defining, and / or generating a waveform sequence based on the determined transport path.

[0151] In various embodiments, the path ratio and axial frequency are allowed to vary during the transport of the polyatomic object crystal through the junction. For example, the path ratio and axial trapping frequency are defined at multiple points along the path through the junction, and the path ratio and axial trapping frequency are allowed to vary between adjacent points in one exemplary embodiment (e.g., the path ratio / axial frequency at the first snapshot 502 of FIG. 5 need not be (but may be) equal to the path ratio / axial frequency at the second snapshot 504 and / or the third snapshot 506). Thus, the path ratio of the transport path is a particular variable path ratio. Furthermore, the potential well that causes the polyatomic object crystal to move and / or advance through the junction to cross the transport path is characterized by a particular variable axial frequency. In one exemplary embodiment, the principal axis of the trapping potential is allowed to vary in a manner similar to the path ratio and axial frequency. For example, the principal axis of the trapping potential is defined at multiple points along the path through the junction, and is allowed to change direction and / or rotate between adjacent points. For example, the axis of the lowest frequency axial mode of the potential well rotates or can be rotated along the transport path through the junction.

[0152] In various embodiments, the specific variable path ratio is in the range of 0 to 1 at the beginning of the transport path through the junction (disposed on the first leg and corresponding to the start time) and at the end of the transport path through the junction (disposed on the second leg and corresponding to the end time). In various embodiments, the specific path ratio is in the range of 0 to 1 at all points along the transport path disposed along the first leg and / or the second leg, but need not be in the range of 0 to 1 at one or more points within the junction. In one exemplary embodiment, the specific variable path ratio is included in the range of 0 to 1 at each point along the transport path. In one exemplary embodiment, the specific variable path ratio is not included in the range of 0 to 1 at one or more points other than the beginning on the first leg and the end on the second leg. In one exemplary embodiment, the specific variable path ratio is included in the range of 0 to 2 at each point along the transport path.

[0153] In various embodiments, the determined transport path is determined based on a cost function that takes into account minimizing (motional and / or non-adiabatic) excitation of the polyatomic object crystal during transport of the polyatomic object crystal through the junction, and also takes into account penalties for high required DC voltages (e.g., high voltage control voltage signals) or other similar phrases.

[0154] Exemplary transport of a polyatomic object crystal through a junction Various embodiments cause the polyatomic object crystal to be transported as a whole through the junction of the multidimensional atomic object confinement device. In other words, as used herein, when the polyatomic object crystal traverses or is transported across and / or through the junction, all atomic objects of the polyatomic object crystal are transported together (e.g., simultaneously) through the junction from the first leg to the second leg. This provides a significant advantage over conventional polyatomic object crystal transport methods, in which the polyatomic object crystal is broken down at the first leg, the atomic objects are transported individually across the junction one at a time, and then the atomic objects are recombined into the polyatomic object crystal at the second leg. In particular, various embodiments of transporting the polyatomic object as a whole through the junction are faster (e.g., less time is required to perform the transport of the polyatomic object crystal) compared to conventional junction transport processes. Additionally, various embodiments enable the use of collaborative cooling during the junction transport process (e.g., while a polyatomic object crystal is positioned within the junction), which reduces the likelihood of losing an atomic object during the junction transport process and / or reduces the amount of cooling required after the junction transport process is performed.

[0155] 4 provides a flow chart illustrating exemplary processes, procedures, operations, and / or the like for causing polyatomic objects to be transported through and / or across the junction 120 using a waveform sequence determined based on a transport path that is a weighted average and / or linear combination of at least an RF minimum path and a path of constant total confinement. In various embodiments, the transport process described by FIG. 4 is configured to cause polyatomic objects to be transported through and / or across the junction 120 in a controlled and / or reliable manner. In an exemplary embodiment, the transport process described by FIG. 4 is configured to cause polyatomic objects to be transported through and / or across the junction 120 quickly and / or with minimal heating / excitation. In various embodiments, the polyatomic object crystal survives transport through the junction more than 95% of the time (e.g., each of the atomic objects of the polyatomic object crystal completes transport through the junction to a destination leg). For example, in one exemplary embodiment, polyatomic object crystals survive transport through the junction more than 98% of the time. In various embodiments, the survival rate is high (e.g., greater than 95%, 98%, and / or similar percentages) and the measured excitation is low (e.g., in one exemplary embodiment, approximately 0.125 quanta of energy per leg traversed and 0.875 quanta of energy per leg traversed for the two normal modes of axial motion).

[0156] Starting with step / operation 402, it is determined that the polyatomic object crystal is to be transported through junction 120. For example, controller 30 may control quantum processor 615 of quantum computer 610 (e.g., in real-time or near real-time) to cause the quantum processor to execute one or more quantum computations, quantum circuits, and / or the like. Controller 30 may determine that the polyatomic object crystal should be transported across and / or through the junction from a first leg 110 of atomic object confinement device 100 to a second leg 110 of atomic object confinement device 100, the first leg and second leg being connected to each other via junction 120, to continue executing one or more quantum computations, quantum circuits, and / or the like. For example, the polyatomic object crystal may be present in first leg 110 (e.g., 110A) and need to be moved to the second leg (e.g., 110B, 110C, or 110D) to execute the quantum operation. In an exemplary embodiment, the quantum operation is performed on a poly-atomic object crystal in the second leg or a third leg that is reachable by traversing the second leg. For example, the controller 30 may comprise means, such as a processing device 705, a memory 710, and / or the like, for determining that a poly-atomic object crystal is transported from the first leg to the second leg.

[0157] In response to determining that the polyatomic object crystal is to be transported through the junction 120 from the first leg to the second leg, an appropriate waveform sequence is accessed. For example, the controller 30 may access an appropriate waveform sequence for transporting the polyatomic object crystal through the junction 120 from the first leg to the second leg. For example, the access waveform sequence may correspond to a transport path through the junction corresponding to transporting the polyatomic object crystal from a first leg defining a first direction, at least near the junction 120, to a second leg defining a second direction, at least near the junction 120. In various cases, the first direction and the second direction may be substantially parallel to one another, and the transport path corresponding to the accessed waveform sequence corresponds to the first direction and the second direction being substantially parallel. In various cases, the first direction and the second direction are transverse to one another and / or form a transport angle between them that is greater than 0 degrees and less than 180 degrees, and the access waveform sequence corresponds to a transport path that includes a change in direction corresponding to the transport angle. For example, in various embodiments, controller 30 comprises means, such as processing device 705, memory 710, and / or the like, for accessing appropriate waveform sequences. For example, waveform sequences may be accessed from a library of machine-level operations, transport operations, and / or waveform sequences (e.g., stored in memory 710) for use by controller 30 during execution of one or more quantum computations, quantum circuits, and / or the like.

[0158] In various embodiments, the atomic object confinement device is controlled (e.g., via the controller 30) to confine and / or trap one or more atomic objects, such as one or more polyatomic object crystals. In step / operation 406, the controller 30 causes the polyatomic object crystal to be transported along the first leg near the junction 120. For example, the controller 30 may cause the one or more voltage sources 50 to generate and supply to one or more TT electrodes 135 of the first leg a control voltage signal that creates a time potential well that transports the polyatomic object crystal along the first leg 110 near the junction 120. When the polyatomic object crystal is near the junction 120, in an exemplary embodiment, the polyatomic object is disposed along the RF null 108 of the first leg. For example, the polyatomic object crystal is near the junction 120 when the polyatomic object extends from the first leg to the second leg and is disposed at a first end of a transport path that corresponds to the waveform sequence being accessed. For example, the controller 30 comprises means such as a processing device 705, a memory 710, a driver controller element 715, and / or the like for causing the polyatomic object to be transported along the first leg near the junction 120.

[0159] In various embodiments, the polyatomic object crystal is transported such that the polyatomic object crystal is disposed near junction 120 and disposed within a potential well that defines an axial frequency substantially equal to the particular axial frequency. For example, the accessed waveform sequence exhibits a particular axial frequency corresponding to the accessed waveform sequence, and voltage source 50 is controlled (e.g., via controller 30) to generate and / or provide a control voltage signal that creates a potential well characterized by the particular axial frequency and disposed near junction 120.

[0160] In an exemplary embodiment, the accessed waveform sequence corresponds to a particular ordering of the atomic objects in the polyatomic object crystal. For example, in an exemplary embodiment, the accessed waveform sequence corresponds to the atomic objects of the polyatomic object crystal being ordered by mass (e.g., the atomic objects having the greatest mass are closest to the junction 120 and the atomic objects having the least mass are furthest from the junction 120). In an exemplary embodiment, while the polyatomic object crystal is being transported along the first leg near the junction 120, the atomic objects in the polyatomic object crystal are rearranged and / or reordered to be ordered based on the particular ordering of the atomic objects corresponding to the accessed waveform sequence.

[0161] In step / action 408, the polyatomic object crystal is transported from the first leg to the second leg along a transport path. For example, the controller 30 causes the polyatomic object crystal to be transported from the first leg to the second leg along a transport path generated based on a linear combination of a RF minimum path for at least a representative atomic object of the polyatomic object crystal and a certain perfect confinement path for the representative atomic object. For example, the controller 30 causes the voltage source 50 to generate and provide a control voltage signal to be applied to the first and / or second leg and / or the TT electrodes 135 of some of the junctions 120. The control voltage signal is generated based on the accessed waveform sequence and causes the polyatomic object crystal to be transported from the first leg to the second leg through the junctions 120. For example, when a control voltage signal generated based on the accessed waveform sequence is applied to the TT electrode 15 near the junction 120, the time-dependent potential well generated thereby causes the polyatomic object crystal to be transported through the junction from the first leg to the second leg along a transport path.

[0162] FIG. 5 shows three snapshots at different times illustrating the dynamics of a polyatomic object at different times along a transport path as the polyatomic object is transported from the first leg 110B to the second leg 110C or 110D through the junction 120. In the illustrated scenario, the polyatomic object crystal includes a first atomic object A and a second atomic object B. The first atomic object A is a first type of atomic object having a first mass, and the second atomic object B is a second type of atomic object having a second mass. The first mass is greater than the second mass. The first column shows the case where a polyatomic object crystal including the first atomic object A and the second atomic object B is transported from the first leg 110B to the second leg 110D through the junction 120, where the first leg 110B and the second leg 110D define a substantially parallel orientation to each other, at least near the junction 120. The second column illustrates the case where a poly-atomic object crystal comprising a first atomic object A and a second atomic object B is transported from the first leg 110B to the second leg 110C through the junction 120, where the first leg 110B and the second leg 110C define directions that are transverse to one another, at least near the junction 120. The third column illustrates the height of the first atomic object A and the second atomic object B above a surface of the atomic object confinement device 100 (e.g., in the z-direction as illustrated in FIG. 1B ).

[0163] The first snapshot 502 is taken at a first time while the polyatomic object is disposed within the first leg 110B near the junction 120. For example, the first snapshot 502 illustrates a polyatomic object disposed at or near the beginning and / or first end of a transport path. A first atomic object A, which is an atomic object having a larger mass, is disposed closer to the junction 120 than a second atomic object B. The first atomic object A and the second atomic object B are disposed on the RF null 108B of the first leg 110B and thus at the same height above a surface of the atomic object confinement device 100.

[0164] The second snapshot 504 is taken at a second time while the polyatomic object crystal is positioned in the middle of the junction 120. For example, the second snapshot 504 corresponds to when the polyatomic object is positioned at a midpoint (e.g., midpoint) of the transport path. The first atomic object A and the second atomic object B have changed position with respect to each other such that the first atomic object A and the second atomic object B have approximately the same x and y coordinates and different z coordinates based on the coordinates shown in FIG. 1B. For example, the first atomic object A is positioned between the second atomic object B and the surface of the atomic object containment device 100. The different height changes that occur in the first atomic object A and the second atomic object B are due to the first and second atomic objects being subjected to different values ​​or amplitudes of the pseudopotential due to their different masses.

[0165] The third snapshot 506 is taken at a third time when the polyatomic object crystal is disposed in the second leg 110D or 110C (e.g., along the RF null 108D, 108C). For example, the third snapshot is taken when the polyatomic object crystal is disposed in the second leg 110D or 110C at a second end (e.g., near or at the end) of the transport path. When the first and second atomic objects are disposed along the RF null 108D, 108C of the second leg 110D, 110C in the third snapshot, the first atomic object A and the second atomic object B are disposed at the same height above the surface of the atomic object containment device 100. The first atomic object A is disposed closer to the junction 120 than the second atomic object B. In other words, when the polyatomic object crystal crosses the junction 120, the polyatomic object crystal is reordered.

[0166] In various embodiments, the polyatomic object crystal includes at least one atomic object configured to be used as a cooperatively cooled atomic object. In other words, at least one atomic object of the polyatomic object crystal is configured to be used to cooperatively cool one or more other atomic objects of the polyatomic object crystal. When the polyatomic object crystals are transported together (e.g., as crystals) through the junction 120, cooperative cooling can be performed while the transport process is occurring. For example, cooperative cooling can be performed in various embodiments as the polyatomic object crystal moves through the junction 120 (e.g., between a first time corresponding to the first snapshot 502 and the third snapshot 506). For example, the controller 30 can control one or more manipulation sources 60 (see FIG. 6 ) configured to generate and provide one or more manipulation signals configured to perform cooperative cooling of the polyatomic object crystal during the transport process. Thus, when the polyatomic object crystal reaches the second leg, the polyatomic object crystal requires less cooling than if cooperative cooling had not been performed during the transport process.

[0167] Technical Advantages Various embodiments provide a technical solution to the technical problem of transporting a polyatomic object crystal through a junction of a multidimensional atomic object confinement device. Various embodiments provide a technical solution to the technical problem of transporting a multi-species polyatomic object crystal through a junction of a multidimensional atomic object confinement device. For example, various embodiments provide techniques for determining a waveform sequence that causes a polyatomic object crystal to be transported through the junction in a reliable manner (e.g., without the polyatomic object crystal and / or its atomic objects being overly excited and / or lost from the atomic object confinement device) when a control voltage signal generated based on the waveform sequence is applied to a TT electrode close to the junction. Various embodiments provide techniques for applying such a waveform sequence to transport a polyatomic object crystal through a junction of an atomic object confinement device.

[0168] Conventionally, to transport a polyatomic object crystal through a junction, the crystal is broken down at a first leg, the atomic objects are transported through the junction one at a time, and the crystal is reformed at a second leg. However, this break-down transport of the polyatomic object crystal takes a significant amount of time. For example, if break-down transport of the polyatomic object crystal is used in a multidimensional atomic object confinement device that is part of a quantum process or quantum computer, it will greatly reduce the efficiency of the quantum computer by causing significant time delays. In addition, such break-down transport of the polyatomic object crystal does not allow for the performance of cooperative cooling during the transport process. As mentioned above, in various embodiments, cooperative cooling is performed during the transport process, which provides an additional technical advantage of a shorter time required for transport cooling execution.

[0169] Thus, the various embodiments provide technical improvements in the field of transporting polyatomic objects through a joint of a multidimensional atomic object confinement device. In particular, the various embodiments reduce the time required to transport a polyatomic object crystal through the joint, increase the reliability of such transport process, and / or reduce the amount of post-transport process cooling required.

[0170] Exemplary Quantum Computer with Atomic Object Confinement Device As described above, transport of the poly-atomic object crystal through the junction of the atomic object confinement device is controlled in various embodiments by a controller 30 of a quantum computer 610. FIG. 6 is a schematic diagram of an exemplary quantum computer system 600 including an atomic object confinement device 100 (e.g., an ion trap) according to an exemplary embodiment. In various embodiments, the quantum computer system 600 comprises a computing entity 10 and a quantum computer 610. In various embodiments, the quantum computer 610 comprises a controller 30 and a quantum processor 615. In various embodiments, the quantum processor 615 includes the atomic object confinement device 100 enclosed in a cryostat and / or vacuum chamber 40, one or more voltage sources 50, one or more manipulation sources 60, and / or the like.

[0171] In an exemplary embodiment, the one or more manipulation sources 60 comprise one or more lasers (e.g., optical lasers, microwave sources, and / or the like). In various embodiments, the one or more manipulation sources 60 are configured to manipulate and / or cause the evolution of a controlled quantum state of one or more atomic objects within the atomic object confinement device 100. For example, in an exemplary embodiment, where the one or more manipulation sources 60 comprise one or more lasers, the lasers may irradiate one or more laser beams onto the confinement device within the cryogenic and / or vacuum chamber 40. The laser beams may be used to perform one or more quantum gates, co-cooling, and / or the like. In various embodiments, the manipulation sources 60 are controlled by respective driver controller elements 715 of the controller 30.

[0172] In various embodiments, the quantum computer 610 comprises one or more voltage sources 50. For example, the voltage sources 50 may comprise a plurality of TT voltage drivers and / or voltage sources and / or at least one RF driver and / or voltage source. The voltage sources 50 may be electrically coupled to corresponding electrical potential generating elements (e.g., TT electrodes 135, RF rails 130) of the atomic object confinement device 100 in an exemplary embodiment. For example, the voltage sources 50 are configured to deliver a periodic voltage signal to the RF rails 130 and a control voltage signal to the TT electrodes 135. In various embodiments, the voltage sources 50 are controlled by respective driver controller elements 715 of the controller 30.

[0173] In various embodiments, computing entity 10 is configured to enable a user to provide input to quantum computer 610 (e.g., via a user interface of computing entity 10), receive and display output from quantum computer 610, and / or perform the like operations thereon. Computing entity 10 may communicate with a controller 30 of quantum computer 610 via one or more wired or wireless networks 20 and / or via direct wired and / or wireless communication. In exemplary embodiments, computing entity 10 may translate, organize, format, and / or perform the like operations on information / data, quantum circuits, quantum computing algorithms, and / or the like into a computing language, executable instructions, command sets, and / or the like that controller 30 can understand and / or implement.

[0174] In various embodiments, controller 30 is configured to control voltage source 50, a cryogenic and / or vacuum system that controls the temperature and pressure within cryogenic and / or vacuum chamber 40, manipulation source 60, and / or other systems configured to control various environmental conditions (e.g., temperature, pressure, and / or the like) within cryogenic and / or vacuum chamber 40 and / or manipulate and / or cause a controlled evolution of a quantum state of one or more atomic objects within the containment device. For example, controller 30 may cause a controlled evolution of a quantum state of one or more atomic objects within the containment device to execute a quantum circuit and / or algorithm. In various embodiments, the atomic objects confined within the containment device are used as qubits in quantum computer 610. For example, quantum process 615 may include multiple multi-atomic object crystals, each including a first atomic object used as a qubit atomic object of a quantum processor and a second atomic object used as a resonantly cooled atomic object for use in cooling qubit atomic objects of the same multi-atomic object crystal.

[0175] Exemplary Controller In various embodiments, the atomic object confinement device is incorporated into a quantum computer 610. In various embodiments, the quantum computer 610 further comprises a controller 30 configured to control various elements of the quantum computer 610. For example, the controller 30 may be configured to control the voltage source 50, the cryogenic and / or vacuum system that controls the temperature and pressure within the cryogenic and / or vacuum chamber 40, the manipulation source 60, and / or other systems configured to control the environmental conditions (e.g., temperature, humidity, pressure, and / or the like) within the cryogenic and / or vacuum chamber 40 and / or to manipulate and / or cause a controlled evolution of the quantum state of one or more atomic objects within the confinement device.

[0176] As shown in FIG. 7, in various embodiments, the controller 30 may include various controller elements including processing elements and / or devices 705, memory 710, driver controller elements 715, communication interfaces 720, analog-to-digital converter elements 725, and / or similar elements. For example, the processing elements and / or devices 705 may include programmable logic devices (CPLDs), microprocessors, co-processing entities, application specific instruction set processors (ASIPs), integrated circuits, application specific integrated circuits (ASICs), field programmable gate arrays (FPGAs), programmable logic arrays (PLAs), hardware accelerators, other processing devices and / or circuits, and / or the like, and / or controllers. The term circuitry may refer to an entirely hardware embodiment or a combination of hardware and computer program products. In an exemplary embodiment, the processing elements and / or devices 705 of the controller 30 include and / or communicate with a clock.

[0177] For example, memory 710 may include non-transitory memory such as volatile and / or non-volatile memory storage such as one or more of a hard disk, ROM, PROM, EPROM, EEPROM, flash memory, MMC, SD memory card, memory stick, CBRAM, PRAM, FeRAM, RRAM, SONOS, racetrack memory, RAM, DRAM, SRAM, FPM DRAM, EDO DRAM, SDRAM, DDR SDRAM, DDR2SDRAM, DDR3SDRAM, RDRAM, RIMM, DIMM, SIMM, VRAM, cache memory, register memory, and / or the like. In various embodiments, memory 710 may store qubit records (e.g., in a qubit record data store, qubit record database, qubit record table, and / or the like) corresponding to qubits of a quantum computer, calibration tables, executable cues, computer program code (e.g., in one or more computer languages, dedicated controller languages, and / or the like), one or more libraries, one or more waveform sequences, and associated metadata, and / or the like. In an exemplary embodiment, execution of at least a portion of the computer program code stored in memory 710 (e.g., by the processing element and / or device 705) causes the controller 30 to perform one or more steps, operations, processes, procedures, and / or the like described herein to track the phase, configuration, and / or the like of atomic objects and / or poly-atomic object crystals within an atomic system and to cause adjustment of the phase of one or more manipulation sources and / or signals generated thereby.

[0178] In various embodiments, the driver controller element 710 may include one or more drivers and / or controller elements each configured to control one or more drivers. In various embodiments, the driver controller element 715 may comprise a driver and / or a driver controller. For example, the driver controller may be configured to cause one or more corresponding drivers to be operated according to executable instructions, commands, and / or the like scheduled and executed by the controller 30 (e.g., by the processing element and / or device 705). In various embodiments, the driver controller element 715 may enable the controller 30 to operate the manipulation source 60. In various embodiments, the driver may be a laser driver, a vacuum component driver, a driver for controlling the flow of current and / or voltage applied to TT, RF, and / or other electrodes used to maintain and / or control the trapping potential of an atomic object confinement apparatus and / or cause transport of one or more poly-atomic object crystals, a cryogenic and / or vacuum system component driver, and / or the like. For example, the driver may control and / or comprise a TT and / or RF voltage driver and / or voltage source 50 that provides a voltage and / or an electrical signal (e.g., a periodic voltage signal and / or a control voltage signal) to the TT electrode 135 and / or the RF rail 130. In various embodiments, the controller 30 comprises means for transmitting and / or receiving signals from one or more optical receiver components, such as a camera, a MEMs camera, a CCD camera, a photodiode, a photomultiplier tube, and / or the like. For example, the controller 30 may comprise one or more analog-to-digital converter elements 725 configured to receive signals from one or more optical receiver components, a calibration sensor, and / or the like.

[0179] In various embodiments, the controller 30 may comprise a communications interface 720 for interfacing and / or communicating with the computing entity 10. For example, the controller 30 may comprise a communications interface 720 for receiving executable instructions, command sets, and / or the like from the computing entity 10 and providing to the computing entity 10 output received from the quantum computer 610 (e.g., from an optical concentration system) and / or results of processing the output. In various embodiments, the computing entity 10 and the controller 30 may communicate via a direct wired and / or wireless connection and / or one or more wired and / or wireless networks 20.

[0180] Exemplary Computing Entity 8 is an example schematic diagram of an example computing entity 10 that may be used in conjunction with embodiments of the present invention. In various embodiments, computing entity 10 is configured to enable a user to provide input to quantum computer 610 (e.g., via a user interface of computing entity 10) and receive, display, analyze, and / or perform the like operations on output from quantum computer 610.

[0181] As shown in FIG. 8, the computing entity 10 may include an antenna 812, a transmitter 804 (e.g., wireless), a receiver 806 (e.g., radio), and a processing element 808 that provides signals to and receives signals from the transmitter 804 and receiver 806, respectively. The signals provided to and received from the transmitter 804 and receiver 806, respectively, may include signaling information / data according to an applicable wireless system air interface standard for communicating with various entities, such as the controller 30, other computing entities 10, and / or the like. In this regard, the computing entity 10 may be operable with one or more air interface standards, communication protocols, modulation types, and access types. For example, the computing entity 10 may be configured to receive and / or provide communications using a wired data transmission protocol, such as Fiber Distributed Data Interface (FDDI), Digital Subscriber Line (DSL), Ethernet, Asynchronous Transfer Mode (ATM), Frame Relay, Data Over Cable Service Interface Specification (DOCSIS), or any other wired transmission protocol.Similarly, the computing entity 10 may be configured to communicate with any of a variety of networks, including General Packet Radio System (GPRS), Universal Mobile Telecommunications System (UMTS), Code Division Multiple Access 2000 (CDMA2000), CDMA2000 1X (1xRTT), Wideband Code Division Multiple Access (WCDMA), Global System for Mobile Communications (GSM), Enhanced Data rates for GSM Evolution (EDGE), Time Division Synchronous Code Division Multiple Access (TD-SCDMA), Long Term Evolution (LTE), Evolved Universal Terrestrial Radio Access Network (E-UTRAN), Evolution-Data Optimized (EVDO), High Speed ​​Packet Access (HSPA), High Speed ​​Downlink Packet Access (HSDPA) IEEE 802.11 (Wi-Fi), Wi-Fi It may be configured to communicate over a wireless external communications network using any of a variety of protocols, such as Direct, 802.16 (WiMAX), ultra-wideband (UWB), infrared (IR) protocol, near field communication (NFC) protocol, Wibree, Bluetooth protocol, wireless universal serial bus (USB) protocol, and / or any other wireless protocol.The computing entity 10 may communicate using such protocols and standards using Border Gateway Protocol (BGP), Dynamic Host Configuration Protocol (DHCP), Domain Name System (DNS), File Transfer Protocol (FTP), Hypertext Transfer Protocol (HTTP), HTTP over TLS / SSL / Secure, Internet Message Connection Protocol (IMAP), Network Time Protocol (NTP), Simple Mail Transfer Protocol (SMTP), Telnet, Transport Layer Security (TLS), Secure Sockets Layer (SSL), Internet Protocol (IP), Transmission Control Protocol (TCP), User Datagram Protocol (UDP), Datagram Congestion Control Protocol (DCCP), Stream Control Transmission Protocol (SCTP), Hypertext Markup Language (HTML), and / or the like.

[0182] Through these communication standards and protocols, computing entity 10 may communicate with various other entities using concepts such as Unstructured Supplementary Service Information / Data (USSD), Short Message Service (SMS), Multimedia Messaging Service (MMS), Dual Tone Multi-Frequency Signaling (DTMF), and / or Subscriber Identity Module Dialer (SIM dialer), etc. Computing entity 10 may also download modifications, add-ons, and updates to its firmware, software (including, e.g., executable instructions, applications, program modules), and operating system, for example.

[0183] The computing entity 10 may also include user interface devices including one or more user input / output interfaces (e.g., a display 816 and / or a speaker / speaker driver coupled to the processing element 808, and a touch screen, keyboard, mouse, and / or microphone coupled to the processing element 808). For example, the user output interfaces may be configured to provide applications, browsers, user interfaces, interfaces, dashboards, screens, web pages, pages, and / or similar terms used interchangeably herein, executing on and / or accessible via the computing entity 10 for causing a display or audible presentation of information / data and for interactive manipulation via one or more user input interfaces. The user input interfaces may comprise any of a number of devices that enable the computing entity 10 to receive data, such as a keypad 818 (hard or soft), a touch display, a voice / speech or motion interface, a scanner, reader, or other input device. In embodiments including a keypad 818, the keypad 818 may include (or cause to be displayed) conventional numeric (0-9) and related keys (#, *), and other keys used to operate the computing entity 10, and may include a set of keys that may be activated to provide a full set of alphabetic keys or a full set of alphanumeric keys. In addition to providing input, the user input interface may be used to activate or deactivate certain features, such as, for example, a screen saver and / or a sleep mode. Through such input, the computing entity 10 may collect information / data, user interaction / input, and / or the like.

[0184] The computing entity 10 may also include volatile storage or memory 822 and / or non-volatile storage or memory 824, which may be embedded and / or removable. For example, the non-volatile memory may be ROM, PROM, EPROM, EEPROM, flash memory, MMC, SD memory cards, memory sticks, CBRAM, PRAM, FeRAM, RRAM, SONOS, racetrack memory, and / or the like. The volatile memory may be RAM, DRAM, SRAM, FPM DRAM, EDO DRAM, SDRAM, DDR SDRAM, DDR2 SDRAM, DDR3 SDRAM, RDRAM, RIMM, DIMM, SIMM, VRAM, cache memory, registered memory, and / or the like. The volatile and non-volatile storage or memory may store databases, database instances, database management system entities, data, applications, programs, program modules, scripts, source code, object code, byte code, compiled code, interpreted code, machine code, executable instructions, and / or the like to implement the functionality of the computing entity 10.

[0185] conclusion Many modifications and other embodiments of the inventions set forth herein will come to mind to one skilled in the art to which this invention pertains having the benefit of the teachings presented in the foregoing descriptions and the associated drawings. It will be understood, therefore, that the invention is not to be limited to the specific embodiments disclosed, and that modifications and other embodiments are intended to be included within the scope of the appended claims. Although specific terms have been employed herein, they are used in a generic and descriptive sense only and not for purposes of limitation. [Explanation of symbols]

[0186] 10 Computing Entities 30 Controller 50 Voltage Source 60 Manipulation Source 100 Atomic Object Containment Device 102 Longitudinal Gap 105A, 105B, 105D Leg axis 105C Leg axis 108A, 108B, 108D RF Null 108C RF Null 110 Legs 110A, 110B, 110C, 110D legs 114 TT electrode 120 Joint 130 Radio Frequency (RF) Rail 130B.1, 130B.2 RF Rail 130C RF Rail 130C.1, 130C.2 RF Rail 132 substantially parallel longitudinal axes 132X substantially parallel longitudinal axes 132X.1, 132X.2 substantially parallel longitudinal axes 132Y.1, 132Y.2 substantially parallel longitudinal axes 135 TT electrode 136 TT electrode 136A.1, 136A.2, 136A.3 TT electrode 200 Plots 202 RF minimum route 204 Paths of Constant Total Confinement 206 Transport Route 502 First Snapshot 506 Third Snapshot 600 Quantum Computer System 610 Quantum Computer 615 Quantum Processor 705 Processing Device 710 Memory 720 Communication Interface 725 Analog to Digital Converter Elements 804 Transmitter 806 Receiver 808 Processing Device, Processing Element 812 Antenna 816 Display 818 Keypad 820 Network Interface 822, 824 Memory

Claims

1. 1. A method for controlling an atomic object confinement device to cause transport of a poly-atomic object crystal through a junction of said atomic object confinement device, said junction being formed by two or more legs of said atomic object confinement device, at least two of said two or more legs defining an orientation at least proximate to said junction that intersects with one another, said atomic object confinement device comprising a plurality of electrodes, said method comprising:

11. The method of claim 10, further comprising: controlling one or more voltage sources to cause generation of a time-dependent potential by applying a control voltage signal to at least a portion of the plurality of electrodes, the time-dependent potential being configured to propagate through the junction from a first leg of the two or more legs to a second leg of the two or more legs, generating a potential well that causes the poly-atomic object crystal to traverse a transport path through the junction from the first leg to the second leg, the transport path being determined at least in part based on a combination of at least (a) a path of constant complete confinement for a representative atomic object of the poly-atomic object crystal, and (b) a path of high frequency minimum for the representative atomic object of the poly-atomic object crystal, the combination being determined based on a particular variable path ratio.

2. 2. The method of claim 1, wherein the polyatomic object comprises a first atomic object of a first species having a first mass and a second atomic object of a second species having a second mass, the first mass being greater than the second mass, and an order of atomic objects within the polyatomic object crystal is altered as the polyatomic object crystal traverses the transport path.

3. controlling one or more voltage sources in electrical communication with one or more respective electrodes of said atomic object confinement device to cause said atomic object confinement device to confine at least one of said poly-atomic object crystals within said first leg of said two or more legs; controlling the one or more voltage sources to cause transport of the poly-atomic object crystal along the first leg near the junction, the potential well being characterized by a particular variable axial frequency; and controlling a manipulation source to cause the manipulation source to generate and provide a communal cooling beam such that the communal cooling beam is incident on the poly-atomic object crystal while the poly-atomic object crystal traverses the junction.

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